Interface Characterization and Control of 2D Materials and Heterostructures

Colloidal Synthesis of (PbBr2)2(AMTP)2PbBr4 a Periodic Perovskite "Heterostructured" Nanocrystal

Heterostructures in nanoparticles challenge our common understanding of interfaces due to quantum confinement and size effects, giving rise to synergistic properties. An alternating heterostructure in which multiple and reoccurring interfaces appear in a single nanocrystal is hypothesized to accentuate such properties. We present a colloidal synthesis for perovskite layered heterostructure nanoparticles with a (PbBr2)2(AMTP)2PbBr4 composition. By varying the synthetic parameters, such as synthesis temperature, solvent, and selection of precursors, we control particle size, shape, and product priority. The structures are validated by X-ray and electron diffraction techniques. The heterostructure nanoparticles' main optical feature is a broad emission peak, showing the same range of wavelengths compared to the bulk sample.

Activating two-dimensional semiconductors for photocatalysis: a cross-dimensional strategy

The emerging two-dimensional (2D) semiconductors substantially extend materials bases for versatile applications such as semiconductor photocatalysis demanding semiconductive matrices and large surface areas. The dimensionality, while endowing 2D semiconductors the unique properties to host photocatalytic functionality of pollutant removal and hydrogen evolution, hurdles the activation paths to form heterogenous photocatalysts where the photochemical processes are normally superior over these on the mono-compositional counterparts. In this perspective, we present a cross-dimensional strategy to employ thenD (n= 0-2) clusters or nanomaterials as activation partners to boost the photocatalytic activities of the 2D semiconductors. The formation principles of heterogenous photocatalysts are illustrated specifically for the 2D matrices, followed by selection criteria of them among the vast 2D database. The computer investigations are illustrated in the density functional theory route and machine learning benefitted from the vast samples in the 2D library. Synthetic realizations and characterizations of the 2D heterogenous systems are introduced with an emphasis on chemical methods and advanced techniques to understand materials and mechanistic studies. The perspective outlooks cross-dimensional activation strategies of the 2D materials for other applications such as CO2removal, and materials matrices in other dimensions which may inspire incoming research within these fields.

Fast and high-resolution mapping of van der Waals forces of 2D materials interfaces with bimodal AFM

High-spatial resolution mapping of van der Waals forces is relevant in several fields ranging from nanotechnology to colloidal science. The emergence of two-dimensional heterostructures assembled by van der Waals interactions has enhanced the interest of those measurements. Several AFM methods have been developed to measure the adhesion force between an AFM probe and the material of interest. However, a reliable and high-resolution method to measure the Hamaker constant remains elusive. We demonstrate that an atomic force microscope operated in a bimodal configuration enables fast, quantitative, and high-resolution mapping of the Hamaker constant of interfaces. The method is applied to map the Hamaker constant of monolayer, bilayer and multilayer MoS2 surfaces. Those interfaces are characterized with Hamaker constant and spatial resolutions of, respectively, 0.1 eV and 50 nm.

Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials

The altermagnetism influences the electronic states allowing the presence of non-relativistic spin-splittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface stateswill be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative materials belonging to the orthorhombic, hexagonal and tetragonal space groups. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on themagnetic order. We qualitatively show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our projection method was proven for strong altermagnetism, but it will be equivalently valid for recently discovered weak altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states.

Ethanol Upgrading to n-Butanol Using Transition-Metal-Incorporated Poly(triazine)imide Frameworks

The upgrading of ethanol to n-butanol was performed using a molecular catalyst integrated into a carbon nitride support, one of the first examples of a supported molecular catalyst performing the Guerbet process. Initial studies using crystalline poly(triazine)imide (PTI) with lithium or transition-metal cations imbedded in the support together with a base as the catalyst system did not produce any significant amounts of n-butanol. However, when using the catalyst material formed by treatment of PTI-LiCl with [(Cp*)IrCl₂]₂ (Cp* = pentamethylcyclopentadienyl) along with sodium hydroxide, a 59% selectivity for butanol (13% yield) was obtained at 145 °C. This PTI-(Cp*)Ir material exhibited distinct UV-vis absorption features and powder X-ray diffractions which differ from those of the parent PTI-LiCl and [(Cp*)IrCl₂]₂. The PTI-(Cp*)Ir material was found to have a metal loading of 27% iridium per empirical unit of the framework. Along with the formation of n-butanol from the Guerbet reaction, the presence of higher chain alcohols was also observed.

MXene-based Ti2C/Ta2C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy

Two-dimensional (2D) lateral heterostructures (LH) combining Ti₂C and Ta₂C MXenes were investigated by means of first-principles calculations. Our structural and elastic properties calculations show that the lateral Ti₂C/Ta₂C heterostructure results in a 2D material that is stronger than the original isolated MXenes and other 2D monolayers such as germanene or MoS₂. The analysis of the evolution of the charge distribution with the size of the LH shows that, for small systems, it tends to distribute homogeneously between the two monolayers, whereas for larger systems electrons tend to accumulate in a region of ∼6 Å around the interface. The work function of the heterostructure, one crucial parameter in the design of electronic nanodevices, is found to be lower than that of some conventional 2D LH. Remarkably, all the heterostructures studied show a very high Curie temperature (between 696 K and 1082 K), high magnetic moments and high magnetic anisotropy energies. These features make (Ti₂C)/(Ta₂C) lateral heterostructures very suitable candidates for spintronic, photocatalysis, and data storage applications based upon 2D magnetic materials.

Chemomechanical modification of quantum emission in monolayer WSe2

Two-dimensional (2D) materials have attracted attention for quantum information science due to their ability to host single-photon emitters (SPEs). Although the properties of atomically thin materials are highly sensitive to surface modification, chemical functionalization remains unexplored in the design and control of 2D material SPEs. Here, we report a chemomechanical approach to modify SPEs in monolayer WSe₂ through the synergistic combination of localized mechanical strain and noncovalent surface functionalization with aryl diazonium chemistry. Following the deposition of an aryl oligomer adlayer, the spectrally complex defect-related emission of strained monolayer WSe₂ is simplified into spectrally isolated SPEs with high single-photon purity. Density functional theory calculations reveal energetic alignment between WSe₂ defect states and adsorbed aryl oligomer energy levels, thus providing insight into the observed chemomechanically modified quantum emission. By revealing conditions under which chemical functionalization tunes SPEs, this work broadens the parameter space for controlling quantum emission in 2D materials.

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n-type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p-type MoS2 , which is crucial for complementary logic applications but remains difficult. In this work, high-quality NbS2 -MoS2 lateral heterostructures are synthesized by one-step metal-organic chemical vapor deposition (MOCVD) together with monolayer MoS2 substitutionally doped by Nb, resulting in a p-type doped behavior. The heterojunction shows a p-type transfer characteristic with a high on/off current ratio of ≈104 , exceeding previously reported values. The band structure through the NbS2 -MoS2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next-generation nanoelectronics and highly integrated devices.

Tuning Dimensionality of Benzimidazole Aggregates by Using Tetraoctylammonium Bromide: Enhanced Electrochemiluminescence Studies

Exploring the depolymerization strategy of liposoluble luminophores in the aqueous phase is vital for the development of electrochemiluminescence (ECL). In this work, tetraoctylammonium bromide (TOAB) with four long hydrophobic chains and short hydrophilic ends is used as a template to limit the aggregation of benzimidazole (BIM). By adjusting the loading of BIM on the hydrophobic chains of TOAB, a two-dimensional lamellar BIM/TOAB is formed, the ECL intensity of which is 6.4 times higher than that of the aggregated BIM (H₂O₂ as the coreactant). In terms of ECL spectroscopies, cyclic voltammetry , ECL transients, and the adjustment of the scanning potential range, the ECL mechanism is thoroughly studied. This work provides a new way to depolymerize organic luminophores and reveals a possible pathway in the annihilation ECL mechanism.

Interface Engineering in 2D/2D Heterogeneous Photocatalysts

Assembling different 2D nanomaterials into heterostructures with strong interfacial interactions presents a promising approach for novel artificial photocatalytic materials. Chemically implementing the 2D nanomaterials' construction/stacking modes to regulate different interfaces can extend their functionalities and achieve good performance. Herein, based on different fundamental principles and photochemical processes, multiple construction modes (e.g., face-to-face, edge-to-face, interface-to-face, edge-to-edge) are overviewed systematically with emphasis on the relationships between their interfacial characteristics (e.g., point, linear, planar), synthetic strategies (e.g., in situ growth, ex situ assembly), and enhanced applications to achieve precise regulation. Meanwhile, recent efforts for enhancing photocatalytic performances of 2D/2D heterostructures are summarized from the critical factors of enhancing visible light absorption, accelerating charge transfer/separation, and introducing novel active sites. Notably, the crucial roles of surface defects, cocatalysts, and surface modification for photocatalytic performance optimization of 2D/2D heterostructures are also discussed based on the synergistic effect of optimization engineering and heterogeneous interfaces. Finally, perspectives and challenges are proposed to emphasize future opportunities for expanding 2D/2D heterostructures for photocatalysis.

Interfacial Liquid Water on Graphite, Graphene, and 2D Materials

The optical, electronic, and mechanical properties of graphite, few-layer, and two-dimensional (2D) materials have prompted a considerable number of applications. Biosensing, energy storage, and water desalination illustrate applications that require a molecular-scale understanding of the interfacial water structure on 2D materials. This review introduces the most recent experimental and theoretical advances on the structure of interfacial liquid water on graphite-like and 2D materials surfaces. On pristine conditions, atomic-scale resolution experiments revealed the existence of 1-3 hydration layers. Those layers were separated by ∼0.3 nm. The experimental data were supported by molecular dynamics simulations. However, under standard working conditions, atomic-scale resolution experiments revealed the presence of 2-3 hydrocarbon layers. Those layers were separated by ∼0.5 nm. Linear alkanes were the dominant molecular specie within the hydrocarbon layers. Paradoxically, the interface of an aged 2D material surface immersed in water does not have water molecules on its vicinity. Free-energy considerations favored the replacement of water by alkanes.

Emergent, Non-Aging, Extendable, and Rechargeable Exchange Bias in 2D Fe3 GeTe2 Homostructures Induced by Moderate Pressuring

As a crucial concept in magnetism and spintronics, exchange bias (ExB) measures the asymmetry in the hysteresis loop of a pinned ferromagnet (FM)/antiferromagnet (AFM) interface. Previous studies are mainly focused on FM/AFM heterostructures composed of conventional bulk materials, whose complex interfaces prohibit precise control and full understanding of the phenomenon. Here, the enabling power of 2D magnets is exploited to demonstrate the emergence, non-aging, extendability, and rechargeability of ExB in van der Waals Fe₃ GeTe₂ homostructures, upon moderate pressuring. The emergence of the ExB is attributed to a local stress-induced FM-to-AFM transition, as validated using first-principles calculations, and confirmed in magneto-optical Kerr effect and second harmonic generation measurements. It is also observed that, negligible ExB aging before the training effect suddenly takes place through avalanching, pronounced delay of the avalanche via timed pressure repetition (extendability), ExB recovery in the post-training sample upon refreshed pressuring (rechargeability), and demonstrate its versatile tunability. These striking findings offer unprecedented insights into the underlying principles of ExB and its training, with immense technological applications in sight.

A few-layer covalent network of fullerenes

The two natural allotropes of carbon, diamond and graphite, are extended networks of sp³-hybridized and sp²-hybridized atoms, respectively¹. By mixing different hybridizations and geometries of carbon, one could conceptually construct countless synthetic allotropes. Here we introduce graphullerene, a two-dimensional crystalline polymer of C₆₀ that bridges the gulf between molecular and extended carbon materials. Its constituent fullerene subunits arrange hexagonally in a covalently interconnected molecular sheet. We report charge-neutral, purely carbon-based macroscopic crystals that are large enough to be mechanically exfoliated to produce molecularly thin flakes with clean interfaces-a critical requirement for the creation of heterostructures and optoelectronic devices². The synthesis entails growing single crystals of layered polymeric (Mg₄C₆₀)_∞ by chemical vapour transport and subsequently removing the magnesium with dilute acid. We explore the thermal conductivity of this material and find it to be much higher than that of molecular C₆₀, which is a consequence of the in-plane covalent bonding. Furthermore, imaging few-layer graphullerene flakes using transmission electron microscopy and near-field nano-photoluminescence spectroscopy reveals the existence of moiré-like superlattices³. More broadly, the synthesis of extended carbon structures by polymerization of molecular precursors charts a clear path to the systematic design of materials for the construction of two-dimensional heterostructures with tunable optoelectronic properties.

Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

Owing to their practical applications, two-dimensional semiconductor p-n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p-n junction diode is formed in tungsten diselenide (WSe₂ ) using a combination of edge and surface contacts. The appearance of amorphous tungsten oxide at etched WSe₂ , and the formation of a junction near the edge contact, are verified by high-resolution transmission electron microscopy. The device demonstrates high on/off ratio for both the edge and surface contacts, with respective values of 10⁷ and 10⁸ . The diode can achieve extremely high mobility of up to 168 cm² V^-1 s^-1 and a rectification ratio of 10³ . The ideality factor is 1.11 at a back gate voltage V_G   = 60 V at 300 K. The devices with encapsulation of hexagonal boron nitride exhibit good stability to atmospheric exposure, over a measured period of 2 months. In addition, the architecture of the contacts, which is based on a single-channel device, should be advantageous for the implementation of more complicated applications such as inverters, photodetectors, and light-emitting diodes.

Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures

The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.

Nanopore-Patterned CuSe Drives the Realization of the PbSe-CuSe Lateral Heterostructure

Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO₃ substrate successfully, but the corresponding signature of the TCI was only observed for films not thinner than seven monolayers, largely due to interfacial strain. Here, we demonstrate a two-step method based on molecular beam epitaxy for the growth of the PbSe-CuSe lateral heterostructure on the Cu(111) substrate, in which we observe a nanopore-patterned CuSe layer that acts as the template for lateral epitaxial growth of PbSe. This further results in a PbSe-CuSe lateral heterostructure with an atomically sharp interface. Scanning tunneling microscopy and spectroscopy measurements reveal a fourfold symmetric square lattice of such PbSe with a quasi-particle band gap of 1.8 eV, a value highly comparable with the theoretical value of freestanding PbSe. The weak monolayer-substrate interaction is further supported by both density functional theory (DFT) and projected crystal orbital Hamilton population, with the former predicting the monolayer's anti-bond state to reside below the Fermi level. Our work demonstrates a practical strategy to fabricate a high-quality in-plane heterostructure, involving a monolayer TCI, which is viable for further exploration of the topology-derived quantum physics and phenomena in the monolayer limit.

Interface-Modulated Resistive Switching in Mo-Irradiated ReS2 for Neuromorphic Computing

Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS-inactive rhenium disulfide (ReS₂ ) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. Using ReS₂ as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β-ReO₂ filament across the defective ReS₂ interface during the set/reset process. Through simple interfacial modulation, ReS₂ of various thicknesses are switchable by modulating the Mo-irradiation period. Besides, the Mo-irradiated ReS₂ (Mo-ReS₂ ) memristor further exhibits a bipolar non-volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non-identical pulse train. The study's findings demonstrate the potential for modulating RS in RS-inactive 2D materials via the unique doping-induced charged impurity scattering property.

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

Effective channel control with low contact resistance can be accomplished through selective ion implantation in Si and III-V semiconductor technologies; however, this approach cannot be adopted for ultrathin van der Waals materials. Herein, we demonstrate a self-aligned fabrication process based on self-terminated p-doping and layer-by-layer chemical etching to achieve low contact resistance as well as a high on/off current ratio in ultrathin tungsten diselenide (WSe₂) field-effect transistors (FETs). Damage-free layer-by-layer thinning of the WSe₂ channel is repeated up to a thickness of approximately 1.4 nm, while maintaining the selectively p-doped source/drain regions. The device characteristics of the recessed-channel WSe₂ FET are systematically monitored during this layer-by-layer recess-channel process. The WSe₂ etching rate is estimated to be 2-3 layers per cycle of oxidation and subsequent chemical etching. The self-terminated tungsten oxide (WO_X) layer grown through ultraviolet-ozone treatment induces robust p-doping in the neighboring (or underlying) WSe₂ through the electron withdrawal mechanism, which remains in the source/drain regions after channel oxide removal. The adopted self-terminated and self-aligned recess-channel process for ultrathin WSe₂ FETs enables the realization of a high on/off output current ratio (>10⁸) and field-effect mobility (∼190 cm²/V·s), while maintaining low contact resistance (0.9-6.1 kΩ·μm) without a postannealing process. The proposed facile and reproducible doping and atomic-layer-etching method for the fabrication of a recessed-channel FET with an ultrathin body can be helpful for high-performance two-dimensional semiconductor devices and is applicable to post-Si complementary metal-oxide semiconductor devices.

Borophene as an emerging 2D flatland for biomedical applications: current challenges and future prospects

Recently, two-dimensional (2D)-borophene has emerged as a remarkable translational nanomaterial substituting its predecessors in the field of biomedical sensors, diagnostic tools, high-performance healthcare devices, super-capacitors, and energy storage devices. Borophene justifies its demand due to high-performance and controlled optical, electrical, mechanical, thermal, and magnetic properties as compared with other 2D-nanomaterials. However, continuous efforts are being made to translate theoretical and experimental knowledge into pragmatic platforms. To cover the associated knowledge gap, this review explores the computational and experimental chemistry needed to optimize borophene with desired properties. High electrical conductivity due to destabilization of the highest occupied molecular orbital (HOMO), nano-engineering at the monolayer level, chemistry-oriented biocompatibility, and photo-induced features project borophene for biosensing, bioimaging, cancer treatment, and theragnostic applications. Besides, the polymorphs of borophene have been useful to develop specific bonding for DNA sequencing and high-performance medical equipment. In this review, an overall critical and careful discussion of systematic advancements in borophene-based futuristic biomedical applications including artificial intelligence (AI), Internet-of-Things (IoT), and Internet-of-Medical Things (IoMT) assisted smart devices in healthcare to develop high-performance biomedical systems along with challenges and prospects is extensively addressed. Consequently, this review will serve as a key supportive platform as it explores borophene for next-generation biomedical applications. Finally, we have proposed the potential use of borophene in healthcare management strategies.

Fano Resonance and Incoherent Interlayer Excitons in Molecular van der Waals Heterostructures

Complex van der Waals heterostructures from layered molecular stacks are promising optoelectronic materials offering the means to efficient, modular charge separation and collection layers. The effect of stacking in the electrodynamics of such hybrid organic-inorganic two-dimensional materials remains largely unexplored, whereby molecular scale engineering could lead to advanced optical phenomena. For instance, tunable Fano engineering could make possible on-demand transparent conducting layers or photoactive elements, and passive cooling. We employ an adapted Gersten-Nitzan model and real time time-dependent density functional tight-binding to study the optoelectronics of self-assembled monolayers on graphene nanoribbons. We find Fano resonances that cause electromagnetic induced opacity and transparency and reveal an additional incoherent process leading to interlayer exciton formation with a characteristic charge transfer rate. These results showcase hybrid van der Waals heterostructures as paradigmatic 2D optoelectronic stacks, featuring tunable Fano optics and unconventional charge transfer channels.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Superatom Regiochemistry Dictates the Assembly and Surface Reactivity of a Two-Dimensional Material

The area of two-dimensional (2D) materials research would benefit greatly from the development of synthetically tunable van der Waals (vdW) materials. While the bottom-up synthesis of 2D frameworks from nanoscale building blocks holds great promise in this quest, there are many remaining hurdles, including the design of building blocks that reliably produce 2D lattices and the growth of macroscopic crystals that can be exfoliated to produce 2D materials. Here we report the regioselective synthesis of the cluster [trans-Co₆Se₈(CN)₄(CO)₂]^3-/4-, a "superatomic" building block designed to polymerize and assemble into a 2D cyanometalate lattice whose surfaces are chemically addressable. The resulting vdW material, [Co(py)₄]₂[trans-Co₆Se₈(CN)₄(CO)₂], grows as bulk single crystals that can be mechanically exfoliated to produce flakes as thin as bilayers, with photolabile CO ligands on the exfoliated surface. As a proof of concept, we show that these surface CO ligands can be replaced by 4-isocyanoazobenzene under blue light irradiation. This work demonstrates that the bottom-up assembly of layered vdW materials from superatoms is a promising and versatile approach to create 2D materials with tunable physical and chemical properties.

Boosting the electronic and catalytic properties of 2D semiconductors with supramolecular 2D hydrogen-bonded superlattices

The electronic properties of two-dimensional semiconductors can be strongly modulated by interfacing them with atomically precise self-assembled molecular lattices, yielding hybrid van der Waals heterostructures (vdWHs). While proof-of-concepts exploited molecular assemblies held together by lateral unspecific van der Waals interactions, the use of 2D supramolecular networks relying on specific non-covalent forces is still unexplored. Herein, prototypical hydrogen-bonded 2D networks of cyanuric acid (CA) and melamine (M) are self-assembled onto MoS₂ and WSe₂ forming hybrid organic/inorganic vdWHs. The charge carrier density of monolayer MoS₂ exhibits an exponential increase with the decreasing area occupied by the CA·M unit cell, in a cooperatively amplified process, reaching 2.7 × 10¹³ cm⁻² and thereby demonstrating strong n-doping. When the 2D CA·M network is used as buffer layer, a stark enhancement in the catalytic activity of monolayer MoS₂ for hydrogen evolution reactions is observed, outperforming the platinum (Pt) catalyst via gate modulation.

Here, the authors report the functionalization of monolayer transition metal dichalcogenides with hydrogen-bonded 2D supramolecular networks of cyanuric acid and melamine, leading to a pronounced n-doping effect and enhancement of MoS₂ catalytic activity for hydrogen evolution reactions.

Recent trends in covalent functionalization of 2D materials

Covalent functionalization of the surface is more crucial in 2D materials than in conventional bulk materials because of their atomic thinness, large surface-to-volume ratio, and uniform surface chemical potential. Because...

Intriguing interfacial characteristics of the CS contact with MX2 (M = Mo, W; X = S, Se, Te) and MXY ((X ≠ Y) = S, Se, Te) monolayers

Using (hybrid) first principles calculations, the electronic band structure, type of Schottky contact and Schottky barrier height established at the interface of the most stable stacking patterns of the CS–MX₂ (M = Mo, W; X = S, Se, Te) and CS–MXY ((X ≠ Y) = S, Se, Te) MS vdWH are investigated. The electronic band structures of CS–MX₂ and CS–MXY MS vdWH seem to be simple sum of CS, MX₂ and MXY monolayers. The projected electronic properties of the CS, MX₂ and MXY layers are well preserved in CS–MX₂ and CS–MXY MS vdWH. Their smaller effective mass (higher carrier mobility) render promising prospects of CS–WS₂ and CS–MoSeTe as compared to other MS vdWH in nanoelectronic and optoelectronic devices, such as a high efficiency solar cell. In addition, we found that the effective mass of holes is higher than that of electrons, suggesting that these heterostructures can be utilized for hole/electron separation. Interestingly, the MS contact led to the formation of a Schottky contact or ohmic contact, therefore we have used the Schottky Mott rule to calculate the Schottky barrier height (SBH) of CS–MX₂ (M = Mo, W; X = S, Se, Te) and CS–MXY ((X ≠ Y) = S, Se, Te) MS vdWH. It was found that CS–MX₂ (M = Mo, W; X = S, Se, Te) and CS–MXY ((X ≠ Y) = S, Se, Te) (in both model-I and -II) MS vdWH form p-type Schottky contacts. These p-type Schottky contacts can be considered a promising building block for high-performance photoresponsive optoelectronic devices, p-type electronics, CS-based contacts, and for high-performance electronic devices.

Electronic band structure, type of Schottky contact and Schottky barrier height established at the interface of the CS–MX₂ (M = Mo, W; X = S, Se, Te) and CS–MXY ((X ≠ Y) = S, Se, Te) MS vdWH.

Intriguing electronic, optical and photocatalytic performance of BSe, M2CO2 monolayers and BSe-M2CO2 (M = Ti, Zr, Hf) van der Waals heterostructures

Using density functional (DFT) theory calculations, we have investigated the electronic band structure, optical and photocatalytic response of BSe, M₂CO₂ (M = Ti, Zr, Hf) monolayers and their corresponding BSe–M₂CO₂ (M = Ti, Zr, Hf) van der Waals (vdW) heterostructures. Optimized lattice constant, bond length, band structure and bandgap values, effective mass of electrons and holes, work function and conduction and valence band edge potentials of BSe and M₂CO₂ (M = Ti, Zr, Hf) monolayers are in agreement with previously available data. Binding energies, interlayer distance and Ab initio molecular dynamic simulations (AIMD) calculations show that BSe–M₂CO₂ (M = Ti, Zr, Hf) vdW heterostructures are stable with specific stacking and demonstrate that these heterostructures might be synthesized in the laboratory. The electronic band structure shows that all the studied vdW heterostructures have indirect bandgap nature – with the CBM and VBM at the Γ–K and Γ-point of BZ for BSe–Ti₂CO₂, respectively; while for BSe–Zr₂CO₂ and BSe–Hf₂CO₂ vdW heterostructures the CBM and VBM lie at the K-point and Γ-point of BZ, respectively. Type-II band alignment in BSe–M₂CO₂ (M = Ti, Zr, Hf) vdW heterostructures prevent the recombination of electron–hole pairs, and hence are crucial for light harvesting and detection. Absorption spectra are investigated to understand the optical behavior of BSe–M₂CO₂ (M = Ti, Zr, Hf) vdW heterostructures, where the lowest energy transitions are dominated by excitons. Furthermore, BSe–M₂CO₂ (M = Ti, Zr, Hf) vdW heterostructures are found to be potential photocatalysts for water splitting at pH = 0, and exhibit enhanced optical properties in the visible light zones.

Using density functional theory calculations, we have investigated the electronic band structure, optical and photocatalytic response of BSe, M₂CO₂ (M = Ti, Zr, Hf) monolayers and their corresponding BSe–M₂CO₂ (M = Ti, Zr, Hf) van der Waals heterostructures.

2D material based field effect transistors and nanoelectromechanical systems for sensing applications

Sensors are ubiquitous in modern society because of their wide applications in healthcare, security, forensic industries as well as environmental protection. Specifically, sensors which can be microfabricated employing very-large-scale-integration (VLSI) compatible microfabrication techniques are particularly desirable. This is because they can provide several advantages: small size, low cost, and possibility of mass fabrication. 2D materials are a promising building block for such sensors. Their atomically thin nature, flat surfaces and ability to form van der Waals hetero junctions opens up the pathway for versatile functionalities. Here, we review 2D material-based field-effect-transistors (FETs) and nano-electro-mechanical systems (NEMs) for applications in detecting different gases, chemicals, and biomolecules. We will provide insights into the unique advantages of these materials for these sensing applications and discuss the fabrication methods, detection schemes and performance pertaining to these technologies. Finally, we will discuss the current challenges and prospects for this field.

Two-Dimensional Polymers and Polymerizations

Synthetic chemists have developed robust methods to synthesize discrete molecules, linear and branched polymers, and disordered cross-linked networks. However, two-dimensional polymers (2DPs) prepared from designed monomers have been long missing from these capabilities, both as objects of chemical synthesis and in nature. Recently, new polymerization strategies and characterization methods have enabled the unambiguous realization of covalently linked macromolecular sheets. Here we review 2DPs and 2D polymerization methods. Three predominant 2D polymerization strategies have emerged to date, which produce 2DPs either as monolayers or multilayer assemblies. We discuss the fundamental understanding and scope of each of these approaches, including: the bond-forming reactions used, the synthetic diversity of 2DPs prepared, their multilayer stacking behaviors, nanoscale and mesoscale structures, and macroscale morphologies. Additionally, we describe the analytical tools currently available to characterize 2DPs in their various isolated forms. Finally, we review emergent 2DP properties and the potential applications of planar macromolecules. Throughout, we highlight achievements in 2D polymerization and identify opportunities for continued study.

2D/2D Heterojunction systems for the removal of organic pollutants: A review

Photocatalysis is considered to be an effective way to remove organic pollutants, but the key to photocatalysis is finding a high-efficiency and stable photocatalyst. 2D materials-based heterojunction has aroused widespread concerns in photocatalysis because of its merits in more active sites, adjustable band gaps and shorter charge transfer distance. Among various 2D heterojunction systems, 2D/2D heterojunction with a face-to-face contact interface is regarded as a highly promising photocatalyst. Due to the strong coupling interface in 2D/2D heterojunction, the separation and migration of photoexcited electron-hole pairs are facilitated, which enhances the photocatalytic performance. Thus, the design of 2D/2D heterojunction can become a potential model for expanding the application of photocatalysis in the removal of organic pollutants. Herein, in this review, we first summarize the fundamental principles, classification, and strategies for elevating photocatalytic performance. Then, the synthesis and application of the 2D/2D heterojunction system for the removal of organic pollutants are discussed. Finally, the challenges and perspectives in 2D/2D heterojunction photocatalysts and their application for removing organic pollutants are presented.

MnCo2 S4 -CoS1.097 Heterostructure Nanotubes as High Efficiency Cathode Catalysts for Stable and Long-Life Lithium-Oxygen Batteries Under High Current Conditions

Constructing the heterostructures is considered to be one of the most effective methods to improve the poor electrical conductivity and insufficient electrocatalytic properties of metal sulfide catalysts. In this work, MnCo2 S4 -CoS1.097 nanotubes are successfully prepared via a reflux- hydrothermal process. This novel cathode catalyst delivers high discharge/charge specific capacities of 21 765/21 746 mAh g-1 at 200 mA g-1 and good rate capability. In addition, a favorable cycling stability with a fixed specific capacity of 1000 mAh g-1 at high current density of 1000 mA g-1 (167 cycles) and 2000 mA g-1 (57 cycles) are delivered. It is proposed that fast transmission of ions and electrons accelerated by the built-in electric field, multiple active sites from the heterostructure, and nanotube architecture with large specific surface area are responsible for the superior electrochemical performance. To some extent, the rational design of this heterostructured metal sulfide catalyst provides guidance for the development of the stable and efficient cathode catalysts for Li-O2 batteries that can be employed under high current conditions.

An alternative route towards the fabrication of 2D blue phosphorene

Blue phosphorene (BlueP) is a novel two-dimensional material that shares properties with black phosphorene and is potentially even more interesting for opto-electronic applications because of its layer dependent wide band gap of ≈ 2 to 3 eV and superior charge carrier mobility. It was first fabricated on Au(111), where, however, a network consisting of BlueP subunits and Au-linker atoms is formed. The physical properties of such an arrangement strongly differ from a freestanding BlueP monolayer. Here, we report on the growth of epitaxial BlueP on the Au(100) surface, which is an interesting alternative when aiming at quasi-freestanding BlueP domains. We find two different phosphorus phases by means of scanning tunneling microscopy and distortion-corrected low-energy electron diffraction. In the low coverage regime, we observe a commensurate (2 × 2) phase, whereas for higher coverage, a nearly hexagonal structure is formed. For the latter, the lattice parameters measured via atomically resolved scanning tunneling hydrogen microscopy closely resemble those of freestanding BlueP, and the typical height modulation of the phosphorus atoms is verified in our layers by means of x-ray photoelectron diffraction. We further analyze the chemical and electronic properties of these films by means of x-ray and (angle resolved) ultraviolet photoelectron spectroscopy.

van der Waals Epitaxial Growth of Borophene on a Mica Substrate toward a High-Performance Photodetector

The emergence of borophene has triggered soaring interest in the investigation of its superior structural anisotropy, a novel photoelectronic property for diverse potential applications. However, the structural instability and need of a metal substrate for depositing borophene restrict its large-scale applications toward high-performance electronic and optoelectric devices. van der Waals epitaxy is regarded as an efficient technique for growing superb two-dimensional materials onto extensive functional substrates, but the preparation of stable and controllable borophene on nonmetallic substrates is still not reported. Here, we demonstrate that borophene films can be synthesized onto a mica substrate by van der Waals epitaxy, where hydrogen and NaBH₄ are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene coincides with the predicted α'-boron sheet. The borophene-based photodetector shows an excellent photoresponsivity of 1.04 A W^-1 and a specific detectivity of 1.27 × 10¹¹ Jones at a reversed bias of 4 V under illumination of a 625 nm light-emitting diode, which are remarkably superior to those of reported boron nanosheets. This work facilitates further studies of borophene toward its attractive properties and applications in novel optoelectronic devices and integrated circuits.

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures

Manipulation of Ohmic contacts in 2D transition metal dichalcogenides for enhancing the transport properties and enabling its application as a practical device has been a long-sought goal. In this study, n-type tungsten disulfide (WS2 ) single atomic layer to improve the Ohmic contacts of the p-type molybdenum ditelluride (MoTe2 ) material is covered. The Ohmic properties, based on the lowering of Schottky barrier height (SBH) owing to the tunneling barrier effect of the WS2 monolayer, are found to be unexpectedly excellent at room temperature and even at 100 K. The improved SBH and contact resistances are 3 meV and 1 MΩ µm, respectively. The reduction in SBH and contact resistance is confirmed with temperature-dependent transport measurements. This study further demonstrates the selective carrier transport across the MoTe2 and WS2 layers by modulating the applied gate voltage. This WS2 /MoTe2 heterostructure exhibits excellent gate control over the currents of both channels (n-type and p-type). The on/off ratios for both the electron and hole channels are calculated as 107 and 106 , respectively, indicating good carrier type modulation by the electric field of the gate electrode. The Ohmic contact resistance using the tunneling of the atomic layer can be applied to heterojunction combinations of various materials.

Interface chemistry of two-dimensional heterostructures - fundamentals to applications

Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.

Nanoscale Probing of Image-Potential States and Electron Transfer Doping in Borophene Polymorphs

Because synthetic 2D materials are generally stabilized by interfacial coupling to growth substrates, direct probing of interfacial phenomena is critical for understanding their nanoscale structure and properties. Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at the nanoscale and test the widely employed self-doping model of borophene. Supported by apparent barrier height measurements and density functional theory calculations, electron transfer doping occurs for both borophene phases from the Ag(111) substrate. In contradiction with the self-doping model, a higher electron transfer doping level occurs for denser v_1/6 borophene compared to v_1/5 borophene, thus revealing the importance of substrate effects on borophene electron transfer.

Selective p-Doping of 2D WSe2 via UV/Ozone Treatments and Its Application in Field-Effect Transistors

Development of two-dimensional (2D) semiconductor devices with good Ohmic contact is essential to utilize their full potential for nanoelectronics applications. Among the methods that have been introduced to reduce the Schottky barrier in 2D material-based electronic devices, charge transfer doping has attracted significant interest because of its efficiency, simplicity, and compatibility with the microelectronic fabrication process. In this study, 2D WSe₂-based field-effect transistors (FETs) were subjected to selective UV/ozone treatment to improve the Ohmic contact by forming WO_X with a high work function, which induced hole doping in the neighboring WSe₂ via electron transfer. The atomic force microscopy, cross-sectional transmission electron microscopy, and micro-Raman spectroscopy analyses confirmed the self-limiting formation of WO_X while maintaining the crystallinity of the underlying WSe₂. The channel layer of the back-gated 2D WSe₂ FETs was encapsulated using 2D hexagonal boron nitride to prevent the UV/ozone-induced oxidation. By contrast, the regions that were in contact with the underlying metal electrodes were open, which allowed area-selective p-doping in the 2D WSe₂. Our study demonstrated that the Ohmic-like behaviors obtained after area-selective UV/ozone treatment improved the electrical properties of the 2D WSe₂-based FETs such as the field-effect mobility (improvement of 3-4 orders of magnitude) and current on/off ratio (improvement of five orders of magnitude), while maintaining the p-type normally-off characteristics. These results provide useful insights into an effective and facile method to reduce contact resistance in 2D semiconductor materials, thereby enhancing the electrical performances of 2D material-based electronic devices.

Intercalation and flexibility chemistries of soft layered materials

Layered materials, alternate stackings of two or more components, are found in a wide range of scales. Chemists can design and synthesize layered structures containing functional units. The soft-type layered materials exhibit characteristic dynamic functions originating from two-dimensional (2D) anisotropy and structure flexibility. This feature article focuses on "intercalation" and "flexibility" as two new perspectives for designing soft layered materials. Intercalation of guests is a characteristic approach for design of layered structures. Flexibility is an important factor to control the dynamic functions of the layered structures. As a model case, the intercalation-induced tunable stimuli-responsive color-change properties of layered polydiacetylene (PDA) are introduced to study the impact of the intercalation and flexibility on the dynamic functions. Recently, layered materials have drastically expanded the research area from conventional rigid inorganic compounds to new self-assembled nanostructures consisting of organic components, such as polymers, metal-organic frameworks, and covalent-organic frameworks. These new layered architectures have potentials for exhibiting dynamic functions originating from the structure flexibility beyond the static properties originating from classical intercalation and host-guest chemistries. Therefore, intercalation and flexibility chemistries of soft layered materials are regarded as new perspectives for design of advanced dynamic functional materials.

Proposed mechanical method for switching the spin transport channel in two-dimensional magnetic metal-magnetic semiconductor van der Waals contacts

Developing simple nonmagnetic methods to efficiently control spin transport across magnetic metal-magnetic semiconductor contacts plays a key role in developing high-performance nano-spintronic devices, since a magnetic field is hard to apply locally. For this purpose, based on first principles calculations, we here propose a mechanical means for manipulating the spin transport across two-dimensional magnetic metal-magnetic semiconductor van der Waals contacts formed between representative metallic Fe₃GeTe₂ and semiconducting CrGeTe₃/CrI₃ nanosheets. For such contacts, there exist four spin resolved Schottky barriers, i.e. the n/p-type Schottky barriers in the up/down spin channels, in which the dominant transport spin channel, characterized by the lowest Schottky barrier, can be selectively switched by regulating the magnetic coupling between the magnetic metal and magnetic semiconductor via interfacial sliding. In this way, single spin channel ohmic contacts with reversible spin polarization have been realized.

Advanced Anode Materials of Potassium Ion Batteries: from Zero Dimension to Three Dimensions

Potassium ion batteries (PIBs) with the prominent advantages of sufficient reserves and economical cost are attractive candidates of new rechargeable batteries for large-grid electrochemical energy storage systems (EESs). However, there are still some obstacles like large size of K⁺ to commercial PIBs applications. Therefore, rational structural design based on appropriate materials is essential to obtain practical PIBs anode with K⁺ accommodated and fast diffused. Nanostructural design has been considered as one of the effective strategies to solve these issues owing to unique physicochemical properties. Accordingly, quite a few recent anode materials with different dimensions in PIBs have been reported, mainly involving in carbon materials, metal-based chalcogenides (MCs), metal-based oxides (MOs), and alloying materials. Among these anodes, nanostructural carbon materials with shorter ionic transfer path are beneficial for decreasing the resistances of transportation. Besides, MCs, MOs, and alloying materials with nanostructures can effectively alleviate their stress changes. Herein, these materials are classified into 0D, 1D, 2D, and 3D. Particularly, the relationship between different dimensional structures and the corresponding electrochemical performances has been outlined. Meanwhile, some strategies are proposed to deal with the current disadvantages. Hope that the readers are enlightened from this review to carry out further experiments better.

Growth and Grain Boundaries in 2D Materials

Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.

Modulating Charge Separation with Hexagonal Boron Nitride Mediation in Vertical Van der Waals Heterostructures

Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump-probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 10² A W^-1 and 3.4 × 10¹⁴ Jones, respectively. Moreover, a photogain of 1.7 × 10³ shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.

Emergent Optoelectronic Properties of Mixed-Dimensional Heterojunctions

ConspectusThe electronic dimensionality of a material is defined by the number of spatial degrees of confinement of its electronic wave function. Low-dimensional semiconductor nanomaterials with at least one degree of spatial confinement have optoelectronic properties that are tunable with size and environment (dielectric and chemical) and are of particular interest for optoelectronic applications such as light detection, light harvesting, and photocatalysis. By combining nanomaterials of differing dimensionalities, mixed-dimensional heterojunctions (MDHJs) exploit the desirable characteristics of their components. For example, the strong optical absorption of zero-dimensional (0D) materials combined with the high charge carrier mobilities of two-dimensional (2D) materials widens the spectral response and enhances the responsivity of mixed-dimensional photodetectors, which has implications for ultrathin, flexible optoelectronic devices. MDHJs are highly sensitive to (i) interfacial chemistry because of large surface area-to-volume ratios and (ii) electric fields, which are incompletely screened because of the ultrathin nature of MDHJs. This sensitivity presents opportunities for control of physical phenomena in MDHJs through chemical modification, optical excitation, externally applied electric fields, and other environmental parameters. Since this fast-moving research area is beginning to pose and answer fundamental questions that underlie the fundamental optoelectronic behavior of MDHJs, it is an opportune time to assess progress and suggest future directions in this field.In this Account, we first outline the characteristic properties, advantages, and challenges for low-dimensional materials, many of which arise as a result of quantum confinement effects. The optoelectronic properties and performance of MDHJs are primarily determined by dynamics of excitons and charge carriers at their interfaces, where these particles tunnel, trap, scatter, and/or recombine on the time scales of tens of femtoseconds to hundreds of nanoseconds. We discuss several photophysical phenomena that deviate from those observed in bulk heterojunctions, as well as factors that can be used to vary, probe, and ultimately control the behavior of excitons and charge carriers in MDHJ systems. We then discuss optoelectronic applications of MDHJs, namely, photodetectors, photovoltaics, and photocatalysts, and identify current performance limits compared to state-of-the-art benchmarks. Finally, we suggest strategies to extend the current understanding of dynamics in MDHJs toward the realization of stimuli-driven responses, particularly with respect to exciton delocalization, quantum emission, interfacial morphology, responsivity to external stimuli, spin selectivity, and usage of chemically reactive materials.

2 D Materials for Electrochemical Energy Storage: Design, Preparation, and Application

Electrochemical energy storage is a promising route to relieve the increasing energy and environment crises, owing to its high efficiency and environmentally friendly nature. However, it is still challenging to realize its widespread application because of unsatisfactory electrode materials, with either high cost or poor activity and new electrode materials are urgently needed. Two-dimensional (2 D) materials are possible candidates, owing to their unique geometry and physicochemical properties. This Review summarizes the latest advances in the development of 2 D materials for electrochemical energy storage. Computational investigation and design of 2 D materials are first introduced, and then preparation methods are presented in detail. Next, the application of such materials in supercapacitors, alkali metal-ion batteries, and metal-air batteries are summarized comprehensively. Finally, the challenges and perspectives are discussed to offer a guideline for future exploration of high-efficiency 2 D materials for electrochemical energy storage.

Formation processes, size changes, and properties of nanosheets derived from exfoliation of soft layered inorganic-organic composites

Exfoliation is a general route to obtain two-dimensional (2D) nanomaterials. A variety of methods have been developed for controlled exfoliation of layered materials based on stacking via van der Waals interaction, such as graphite and transition-metal dichalcogenides. On the other hand, rigid layered materials consisting of inorganic layers and interlayer metal ions stacked via electrostatic interaction, such as transition-metal oxides and clays, have a limited number of exfoliation methods. Here we studied a new exfoliation route through formation of soft layered composites. Intercalation of guest organic molecules changed rigid inorganic layered compounds into soft layered composites with stacking via van der Waals interaction. The soft layered inorganic-organic composites were exfoliated into surface-modified nanosheets in organic media. The layered composites showed swelling with dispersion in organic media. The time-course analyses suggest that the layered composites were simultaneously exfoliated in the vertical direction and fractured in the lateral direction. Thinner and smaller nanosheets were obtained with an increase in the exfoliation time. Although the resultant nanosheets gradually aggregated in the colloidal liquid, the original dispersion state was recovered with sonication for 5 min at room temperature. This exfoliation route using soft layered composites can be used in the synthesis and application of a variety of 2D nanomaterials.

A DFT study on a borophene/boron nitride interface for its application as an electrode

In order to search for a new anode material for lithium-ion batteries (LIBs), a borophene/boron nitride (B/BN) interface was investigated in detail using density functional theory. Borophene is an excellent two-dimensional (2D) anode material that offers high charging capacity and a low energy barrier, but it suffers from stability issues when it is used in its free-standing form. The findings of this work indicate that the thermal and mechanical stabilities of the borophene epilayer are notably increased by preparing its interface with a boron nitride substrate. The electronic properties of the lithiated and delithiated interface exhibited metallic behavior, whereas the mechanical stiffness of the interface increased three times when compared with that of the pristine borophene. The thermal stability was calculated by molecular dynamics and indicated a six times increase in its value for the interface. The interface exhibited a specific charging capacity of 1698 mA h g^-1, which is higher than that of bare borophene and several other 2D materials. Furthermore, nudged elastic band (NEB) calculations indicated a low energy barrier to diffusion of Li in the interface. These advantages of the B/BN interface make it an excellent choice as an anode material for LIBs.