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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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2
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Ramanathan ES, Chowdhury C. Structural and Electronic Properties of Two-Dimensional Materials: A Machine-Learning-Guided Prediction. Chemphyschem 2023; 24:e202300308. [PMID: 37587774 DOI: 10.1002/cphc.202300308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 08/16/2023] [Accepted: 08/16/2023] [Indexed: 08/18/2023]
Abstract
The growing number of studies and interest in two-dimensional (2D) materials has not yet resulted in a wide range of material applications. This is a result of difficulties in getting the properties, which are often determined through numerical experiments or through first-principles predictions, both of which require lots of time and resources. Here we provide a general machine learning (ML) model that works incredibly well as a predictor for a variety of electronic and structural properties such as band gap, fermi level, work function, total energy and area of unit cell for a wide range of 2D materials derived from the Computational 2D Materials Database (C2DB). Our predicted model for classification of samples works extraordinarily well and gives an accuracy of around 99 %. We are able to successfully decrease the number of studied features by employing a strict permutation-based feature selection method along with the sure independence screening and sparsifying operator (SISSO), which further supports the design recommendations for the identification of novel 2D materials with the desired properties.
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Affiliation(s)
- Eshwar S Ramanathan
- Department of Ocean Engineering, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Chandra Chowdhury
- Institute of Catalysis Research and Technology (IKFT), Karlsruhe Institute of Technology (KIT), 76344, Eggeinstein-Leopoldshafen, Germany
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3
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Tian H, Wang J, Lai G, Dou Y, Gao J, Duan Z, Feng X, Wu Q, He X, Yao L, Zeng L, Liu Y, Yang X, Zhao J, Zhuang S, Shi J, Qu G, Yu XF, Chu PK, Jiang G. Renaissance of elemental phosphorus materials: properties, synthesis, and applications in sustainable energy and environment. Chem Soc Rev 2023; 52:5388-5484. [PMID: 37455613 DOI: 10.1039/d2cs01018f] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The polymorphism of phosphorus-based materials has garnered much research interest, and the variable chemical bonding structures give rise to a variety of micro and nanostructures. Among the different types of materials containing phosphorus, elemental phosphorus materials (EPMs) constitute the foundation for the synthesis of related compounds. EPMs are experiencing a renaissance in the post-graphene era, thanks to recent advancements in the scaling-down of black phosphorus, amorphous red phosphorus, violet phosphorus, and fibrous phosphorus and consequently, diverse classes of low-dimensional sheets, ribbons, and dots of EPMs with intriguing properties have been produced. The nanostructured EPMs featuring tunable bandgaps, moderate carrier mobility, and excellent optical absorption have shown great potential in energy conversion, energy storage, and environmental remediation. It is thus important to have a good understanding of the differences and interrelationships among diverse EPMs, their intrinsic physical and chemical properties, the synthesis of specific structures, and the selection of suitable nanostructures of EPMs for particular applications. In this comprehensive review, we aim to provide an in-depth analysis and discussion of the fundamental physicochemical properties, synthesis, and applications of EPMs in the areas of energy conversion, energy storage, and environmental remediation. Our evaluations are based on recent literature on well-established phosphorus allotropes and theoretical predictions of new EPMs. The objective of this review is to enhance our comprehension of the characteristics of EPMs, keep abreast of recent advances, and provide guidance for future research of EPMs in the fields of chemistry and materials science.
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Affiliation(s)
- Haijiang Tian
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jiahong Wang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Gengchang Lai
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yanpeng Dou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Jie Gao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Zunbin Duan
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Xiaoxiao Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
| | - Qi Wu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Xingchen He
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Linlin Yao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Li Zeng
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Yanna Liu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Xiaoxi Yang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Jing Zhao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Shulin Zhuang
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jianbo Shi
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Guangbo Qu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xue-Feng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Paul K Chu
- Department of Physics, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
- Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Guibin Jiang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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4
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Bao T, Wang J, Liu C. Recent advances in epitaxial heterostructures for electrochemical applications. NANOSCALE ADVANCES 2023; 5:313-322. [PMID: 36756261 PMCID: PMC9846443 DOI: 10.1039/d2na00710j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Accepted: 11/29/2022] [Indexed: 06/18/2023]
Abstract
Construction of epitaxial heterostructures is crucial for boosting the electrochemical properties of various materials, however a review dedicated to this attractive topic is still lacking. In this Minireview, a timely summary on the achievements of epitaxial heterostructure design for electrochemical applications is provided. We first introduce the synthesis strategies to provide fundamental understanding on how to create epitaxial interfaces between different components. Secondly, the superiorities of epitaxial heterostructures in electrocatalysis, supercapacitors and batteries are highlighted with the underlying structure-property relationship elucidated. Finally, a discussion on the challenges and future prospects of this field is presented.
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Affiliation(s)
- Tong Bao
- School of Chemistry and Molecular Engineering, East China Normal University Shanghai 200241 P. R. China
| | - Jing Wang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology Shanghai 201418 P. R. China
- School of Chemistry and Molecular Engineering, East China Normal University Shanghai 200241 P. R. China
| | - Chao Liu
- School of Chemistry and Molecular Engineering, East China Normal University Shanghai 200241 P. R. China
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5
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Review of Fe-based spin crossover metal complexes in multiscale device architectures. Inorganica Chim Acta 2023. [DOI: 10.1016/j.ica.2022.121168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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6
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Dong Y, Sun Y, Liu J, Shi X, Li H, Zhang J, Li C, Yi Y, Mo S, Fan L, Jiang L. Thermally Stable Organic Field-Effect Transistors Based on Asymmetric BTBT Derivatives for High Performance Solar-Blind Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106085. [PMID: 35182036 PMCID: PMC9036011 DOI: 10.1002/advs.202106085] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/03/2022] [Indexed: 06/14/2023]
Abstract
High-performance solar-blind photodetectors are widely studied due to their unique significance in military and industrial applications. Yet the rational molecular design for materials to possess strong absorption in solar-blind region is rarely addressed. Here, an organic solar-blind photodetector is reported by designing a novel asymmetric molecule integrated strong solar-blind absorption with high charge transport property. Such alkyl substituted [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) derivatives Cn-BTBTN (n = 6, 8, and 10) can be easily assembled into 2D molecular crystals and perform high mobility up to 3.28 cm2 V-1 s-1 , which is two orders of magnitude higher than the non-substituted core BTBTN. Cn-BTBTNs also exhibit dramatically higher thermal stability than the symmetric alkyl substituted C8-BTBT. Moreover, C10-BTBTN films with the highest mobility and strongest solar-blind absorption among the Cn-BTBTNs are applied for solar-blind photodetectors, which reveal record-high photosensitivity and detectivity up to 1.60 × 107 and 7.70 × 1014 Jones. Photodetector arrays and flexible devices are also successfully fabricated. The design strategy can provide guidelines for developing materials featuring high thermal stability and stimulating such materials in solar-blind photodetector application.
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Affiliation(s)
- Yicai Dong
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Yanan Sun
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Jie Liu
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Xiaosong Shi
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Haiyang Li
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Jing Zhang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Chunlei Li
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Yuanping Yi
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Song Mo
- Key Laboratory of Science and Technology on High‐tech Polymer MaterialsChinese Academy of SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Lin Fan
- Key Laboratory of Science and Technology on High‐tech Polymer MaterialsChinese Academy of SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Lang Jiang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
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7
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Liu X, Chen K, Li X, Xu Q, Weng J, Xu J. Electron Matters: Recent Advances in Passivation and Applications of Black Phosphorus. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005924. [PMID: 34050548 DOI: 10.1002/adma.202005924] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2020] [Revised: 01/14/2021] [Indexed: 06/12/2023]
Abstract
2D materials have experienced rapid and explosive development in the past decades. Among them, black phosphorus (BP) is one of the most promising materials on account of its thickness-dependent bandgap, high charge-carrier mobility, in-plane anisotropic structure, and excellent biocompatibility, as well as the broad applications brought by the properties. In view of the electron configuration, the most unique feature of BP is the lone-pair electrons on each P atom. The lone-pair electrons inevitably cause high reactivity of BP, particularly toward water/oxygen, which greatly limits the practical application of BP under ambient conditions. The other side of the coin is that BP can serve as an electron donor to promote the construction of BP-based hybrid materials and/or to boost the performance of BP or BP-based hybrid materials in applications. Here, recent advances in passivation and application of BP by addressing the interaction between the lone-pair electrons of BP and the other materials are discussed, and prospects for future research on BP are also proposed.
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Affiliation(s)
- Xiao Liu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials, Xiamen University, Xiamen, 361005, China
| | - Kai Chen
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials, Xiamen University, Xiamen, 361005, China
| | - Xingyun Li
- Department of Biomaterials, College of Materials, Xiamen University, Xiamen, 361005, China
| | - Qingchi Xu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials, Xiamen University, Xiamen, 361005, China
| | - Jian Weng
- Department of Biomaterials, College of Materials, Xiamen University, Xiamen, 361005, China
| | - Jun Xu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials, Xiamen University, Xiamen, 361005, China
- Shenzhen Research Institute of Xiamen University, Shenzhen, 518057, China
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8
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Schaal M, Picker J, Otto F, Gruenewald M, Forker R, Fritz T. An alternative route towards the fabrication of 2D blue phosphorene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:485002. [PMID: 34399408 DOI: 10.1088/1361-648x/ac1dde] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2021] [Accepted: 08/16/2021] [Indexed: 06/13/2023]
Abstract
Blue phosphorene (BlueP) is a novel two-dimensional material that shares properties with black phosphorene and is potentially even more interesting for opto-electronic applications because of its layer dependent wide band gap of ≈ 2 to 3 eV and superior charge carrier mobility. It was first fabricated on Au(111), where, however, a network consisting of BlueP subunits and Au-linker atoms is formed. The physical properties of such an arrangement strongly differ from a freestanding BlueP monolayer. Here, we report on the growth of epitaxial BlueP on the Au(100) surface, which is an interesting alternative when aiming at quasi-freestanding BlueP domains. We find two different phosphorus phases by means of scanning tunneling microscopy and distortion-corrected low-energy electron diffraction. In the low coverage regime, we observe a commensurate (2 × 2) phase, whereas for higher coverage, a nearly hexagonal structure is formed. For the latter, the lattice parameters measured via atomically resolved scanning tunneling hydrogen microscopy closely resemble those of freestanding BlueP, and the typical height modulation of the phosphorus atoms is verified in our layers by means of x-ray photoelectron diffraction. We further analyze the chemical and electronic properties of these films by means of x-ray and (angle resolved) ultraviolet photoelectron spectroscopy.
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Affiliation(s)
- M Schaal
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - J Picker
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstraße 10, 07743 Jena, Germany
| | - F Otto
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - M Gruenewald
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - R Forker
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - T Fritz
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
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Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
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Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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10
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Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe2 van der Waals Heterostructure. CRYSTALS 2021. [DOI: 10.3390/cryst11050470] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
The electronic structure and band offsets of blue phosphorus/WSe2 van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe2 vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe2 vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe2 can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe2 vdW heterostructure a good candidate for future applications in photodetection.
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11
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Durajski AP, Skoczylas KM, Szczęśniak R. Stability and superconductivity of Ca-intercalated bilayer blue phosphorene. Phys Chem Chem Phys 2021; 23:2846-2852. [PMID: 33470999 DOI: 10.1039/d0cp05984f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Superconductivity attracts much attention in two-dimensional (2D) compounds due to their potential application in nano-superconducting devices. Inspired by a recent experiment reporting the superconducting state in twisted bilayer graphene, here, based on the first-principles density-functional theory complemented by the Eliashberg formalism, we have verified the stability and predicted superconductivity in Ca-intercalated bilayer blue phosphorene. The electron and phonon properties and electron-phonon coupling show that AA- and AA'-stacking orders of the phosphorene bilayer are dynamically stable and exhibit conventional phonon-mediated superconductivity with superconducting transition temperatures (Tc) of 11.63 K and 11.74 K, respectively. Furthermore, we study the temperature-dependence of the superconducting energy gap (Δ(T)) and specific heat difference (ΔC(T)). According to our calculations, we found that the dimensionless parameters relative to the Δ(0) and the ΔC(Tc) differ slightly from the values predicted by the Bardeen-Cooper-Schrieffer (BCS) theory. We expect that our findings will broaden the knowledge of 2D superconducting materials and may stimulate more efforts in this field.
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Affiliation(s)
- Artur P Durajski
- Institute of Physics, Częstochowa University of Technology, Ave. Armii Krajowej 19, 42-200 Częstochowa, Poland.
| | - Kamil M Skoczylas
- Institute of Physics, Jan Długosz University in Częstochowa, Ave. Armii Krajowej 13/15, 42-200 Częstochowa, Poland
| | - Radosław Szczęśniak
- Institute of Physics, Częstochowa University of Technology, Ave. Armii Krajowej 19, 42-200 Częstochowa, Poland.
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12
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Hu W, Sheng Z, Hou X, Chen H, Zhang Z, Zhang DW, Zhou P. Ambipolar 2D Semiconductors and Emerging Device Applications. SMALL METHODS 2021; 5:e2000837. [PMID: 34927812 DOI: 10.1002/smtd.202000837] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Revised: 10/12/2020] [Indexed: 06/14/2023]
Abstract
With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiang Hou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
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13
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Yu J, Luo M, Lv Z, Huang S, Hsu HH, Kuo CC, Han ST, Zhou Y. Recent advances in optical and optoelectronic data storage based on luminescent nanomaterials. NANOSCALE 2020; 12:23391-23423. [PMID: 33227110 DOI: 10.1039/d0nr06719a] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The substantial amount of data generated every second in the big data age creates a pressing requirement for new and advanced data storage techniques. Luminescent nanomaterials (LNMs) not only possess the same optical properties as their bulk materials but also have unique electronic and mechanical characteristics due to the strong constraints of photons and electrons at the nanoscale, enabling the development of revolutionary methods for data storage with superhigh storage capacity, ultra-long working lifetime, and ultra-low power consumption. In this review, we investigate the latest achievements in LNMs for constructing next-generation data storage systems, with a focus on optical data storage and optoelectronic data storage. We summarize the LNMs used in data storage, namely upconversion nanomaterials, long persistence luminescent nanomaterials, and downconversion nanomaterials, and their applications in optical data storage and optoelectronic data storage. We conclude by discussing the superiority of the two types of data storage and survey the prospects for the field.
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Affiliation(s)
- Jinbo Yu
- Institute of Microscale Optoelectronics, Shenzhen University, 3688 Nanhai Road, Shenzhen, 518060, P.R. China.
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14
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Shi ZQ, Li H, Xue CL, Yuan QQ, Lv YY, Xu YJ, Jia ZY, Gao L, Chen Y, Zhu W, Li SC. Tuning the Electronic Structure of an α-Antimonene Monolayer through Interface Engineering. NANO LETTERS 2020; 20:8408-8414. [PMID: 33064495 DOI: 10.1021/acs.nanolett.0c03704] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and, thus, their further technological applications. For instance, the freestanding Sb monolayer in the puckered honeycomb phase (α-antimonene), the structural analogue of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the Td-WTe2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and, thus, the electron band of the epitaxial monolayer. As a result, the nearly freestanding (semiconducting) α-antimonene monolayer with a band gap of ∼170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer α-antimonene. This study paves the way toward modifying the electron structure in two-dimensional vdW materials through interface engineering.
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Affiliation(s)
- Zhi-Qiang Shi
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Huiping Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Cheng-Long Xue
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qian-Qian Yuan
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yang-Yang Lv
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yong-Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanbin Chen
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China
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15
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Wang Y, He M, Ma S, Yang C, Yu M, Yin G, Zuo P. Low-Temperature Solution Synthesis of Black Phosphorus from Red Phosphorus: Crystallization Mechanism and Lithium Ion Battery Applications. J Phys Chem Lett 2020; 11:2708-2716. [PMID: 32191477 DOI: 10.1021/acs.jpclett.0c00746] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
As a thermodynamically stable semiconductor material, black phosphorus (BP) has potential application in the field of energy storage and conversion. The preparation of black phosphorus is still limited to the laboratory, which is far from adequate to meet the requirements of future industrial applications. Here, the gram-scale black phosphorus is synthesized in the ethylenediamine medium using a 120-200 °C low-temperature recyclable liquid phase method directly from red phosphorus. A crystallization mechanism from red to black phosphorus based on FTIR, XPS, and DFT calculations is proposed. Black phosphorus as the anode material for lithium ion batteries is superior in discharge specific capacity, rate capability, and cycling stability in comparison with red phosphorus. The facile low-temperature synthesis of BP by the ethylenediamine-assisted liquid phase process will facilitate the extended application of BP in the field of energy storage and conversion.
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Affiliation(s)
- Yang Wang
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Mengxue He
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Shaobo Ma
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Chenhui Yang
- State Key Laboratory of Urban Water Resource and Environment, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Miao Yu
- State Key Laboratory of Urban Water Resource and Environment, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Geping Yin
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Pengjian Zuo
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
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16
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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17
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Cui H, Guo Y, Ma W, Zhou Z. 2 D Materials for Electrochemical Energy Storage: Design, Preparation, and Application. CHEMSUSCHEM 2020; 13:1155-1171. [PMID: 31872570 DOI: 10.1002/cssc.201903095] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2019] [Revised: 12/20/2019] [Indexed: 05/21/2023]
Abstract
Electrochemical energy storage is a promising route to relieve the increasing energy and environment crises, owing to its high efficiency and environmentally friendly nature. However, it is still challenging to realize its widespread application because of unsatisfactory electrode materials, with either high cost or poor activity and new electrode materials are urgently needed. Two-dimensional (2 D) materials are possible candidates, owing to their unique geometry and physicochemical properties. This Review summarizes the latest advances in the development of 2 D materials for electrochemical energy storage. Computational investigation and design of 2 D materials are first introduced, and then preparation methods are presented in detail. Next, the application of such materials in supercapacitors, alkali metal-ion batteries, and metal-air batteries are summarized comprehensively. Finally, the challenges and perspectives are discussed to offer a guideline for future exploration of high-efficiency 2 D materials for electrochemical energy storage.
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Affiliation(s)
- Huijuan Cui
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (ReCast), Nankai University, Tianjin, 300350, P.R. China
| | - Yibo Guo
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (ReCast), Nankai University, Tianjin, 300350, P.R. China
| | - Wei Ma
- School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Zhen Zhou
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (ReCast), Nankai University, Tianjin, 300350, P.R. China
- School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, 450001, P.R. China
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18
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Si N, Yao Q, Jiang Y, Li H, Zhou D, Ji Q, Huang H, Li H, Niu T. Recent Advances in Tin: From Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac Semimetal. J Phys Chem Lett 2020; 11:1317-1329. [PMID: 31945298 DOI: 10.1021/acs.jpclett.9b03538] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
An atomic layer of tin in a buckled honeycomb lattice, termed stanene, is a promising large-gap two-dimensional topological insulator for realizing room-temperature quantum-spin-Hall effect and therefore has drawn tremendous interest in recent years. Because the electronic structures of Sn allotropes are sensitive to lattice strain, e.g. the semimetallic α-phase of Sn can transform into a three-dimensional topological Dirac semimetal under compressive strain, recent experimental advances have demonstrated that stanene layers on different substrates can also host various electronic properties relating to in-plane strain, interfacial charge transfer, layer thickness, and so on. Thus, comprehensive understanding of the growth mechanism at the atomic scale is highly desirable for precise control of such tunable properties. Herein, the fundamental properties of stanene and α-Sn films, recent achievements in epitaxial growth, challenges in high-quality synthesis, and possible applications of stanene are discussed.
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Affiliation(s)
- Nan Si
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering , Nanjing University of Science and Technology , No. 200 Xiaolingwei , Nanjing 210094 , China
| | - Qi Yao
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 200031 , China
- ShanghaiTech Laboratory for Topological Physics , ShanghaiTech University , Shanghai 200031 , China
| | - Yixuan Jiang
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering , Nanjing University of Science and Technology , No. 200 Xiaolingwei , Nanjing 210094 , China
| | - Heping Li
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering , Beijing University of Chemical Technology , Beijing 100029 , China
| | - Dechun Zhou
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering , Nanjing University of Science and Technology , No. 200 Xiaolingwei , Nanjing 210094 , China
| | - Qingmin Ji
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering , Nanjing University of Science and Technology , No. 200 Xiaolingwei , Nanjing 210094 , China
| | - Han Huang
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, College of Physics and Electronics , Central South University , Changsha 410083 , China
| | - Hui Li
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering , Beijing University of Chemical Technology , Beijing 100029 , China
| | - Tianchao Niu
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering , Nanjing University of Science and Technology , No. 200 Xiaolingwei , Nanjing 210094 , China
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19
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Guo R, Zheng Y, Hu Z, Zhang J, Han C, Longhi E, Barlow S, Marder SR, Chen W. Surface Functionalization of Black Phosphorus with a Highly Reducing Organoruthenium Complex: Interface Properties and Enhanced Photoresponsivity of Photodetectors. Chemistry 2020; 26:6576-6582. [DOI: 10.1002/chem.201905173] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Revised: 12/30/2019] [Indexed: 11/09/2022]
Affiliation(s)
- Rui Guo
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology Shenzhen University Shenzhen 518060 P. R. China
- Department of Chemistry National University of Singapore 117543 Singapore Singapore
| | - Yue Zheng
- Department of Physics National University of Singapore 117542 Singapore Singapore
- Center for advanced 2D materials National University of Singapore 117546 Singapore Singapore
| | - Zehua Hu
- Department of Physics National University of Singapore 117542 Singapore Singapore
- Center for advanced 2D materials National University of Singapore 117546 Singapore Singapore
| | - Jialin Zhang
- Department of Chemistry National University of Singapore 117543 Singapore Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology Shenzhen University Shenzhen 518060 P. R. China
| | - Elena Longhi
- Center for Organic Photonics and Electronics and School of, Chemistry and Biochemistry Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Stephen Barlow
- Center for Organic Photonics and Electronics and School of, Chemistry and Biochemistry Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Seth R. Marder
- Center for Organic Photonics and Electronics and School of, Chemistry and Biochemistry Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Wei Chen
- Department of Chemistry National University of Singapore 117543 Singapore Singapore
- Department of Physics National University of Singapore 117542 Singapore Singapore
- Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Binhai New City, Fuzhou 350207 P. R. China
- National University of Singapore (Suzhou) Research Institute Suzhou 215123 P. R. China
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20
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Thurakkal S, Zhang X. Recent Advances in Chemical Functionalization of 2D Black Phosphorous Nanosheets. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902359. [PMID: 31993294 PMCID: PMC6974947 DOI: 10.1002/advs.201902359] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2019] [Revised: 10/10/2019] [Indexed: 05/25/2023]
Abstract
Owing to their tunable direct bandgap, high charge carrier mobility, and unique in-plane anisotropic structure, black phosphorus nanosheets (BPNSs) have emerged as one of the most important candidates among the 2D materials beyond graphene. However, the poor ambient stability of black phosphorus limits its practical application, due to the chemical degradation of phosphorus atoms to phosphorus oxides in the presence of oxygen and/or water. Chemical functionalization is demonstrated as an efficient approach to enhance the ambient stability of BPNSs. Herein, various covalent strategies including radical addition, nitrene addition, nucleophilic substitution, and metal coordination are summarized. In addition, efficient noncovalent functionalization methods such as van der Waals interactions, electrostatic interactions, and cation-π interactions are described in detail. Furthermore, the preparations, characterization, and diverse applications of functionalized BPNSs in various fields are recapped. The challenges faced and future directions for the chemical functionalization of BPNSs are also highlighted.
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Affiliation(s)
- Shameel Thurakkal
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
| | - Xiaoyan Zhang
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
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21
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Jia L, Yuan H, Chang Y, Gu M, Zhu J. Dynamic instability of lithiated phosphorene. RSC Adv 2020; 10:32259-32264. [PMID: 35518136 PMCID: PMC9056505 DOI: 10.1039/d0ra04885b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/03/2020] [Accepted: 08/20/2020] [Indexed: 11/29/2022] Open
Abstract
Li-ion batteries are widely used energy storage units. Although phosphorene delivers a high Li capacity, the transition capacity between the intercalation reaction and the conversion reaction is still not clear. We investigate the structural and electronic properties of Li intercalated phosphorene and graphene/phosphorene/graphene sandwiches by first-principles calculations. The competition to obtain charge from Li between C and P reduces charge depletion on the interlayer P–P bonds, improving stability. Importantly, the sandwiches show higher transition capacities than freestanding phosphorene, confirmed by ab initio molecular dynamics simulations. The trilayer structures show better structural reversibility than the monolayers. Introduction of C improves transition capacity between intercalation and conversion reactions for multilayer phosphorene.![]()
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Affiliation(s)
- Lingchun Jia
- College of Information Technology
- Shanghai Ocean University
- Shanghai 201306
- People's Republic of China
| | - Hongchun Yuan
- College of Information Technology
- Shanghai Ocean University
- Shanghai 201306
- People's Republic of China
| | - Yingli Chang
- College of Information Technology
- Shanghai Ocean University
- Shanghai 201306
- People's Republic of China
| | - Mu Gu
- School of Physics Science and Engineering
- Tongji University
- Shanghai 200092
- People's Republic of China
| | - Jiajie Zhu
- College of Materials Science and Engineering
- Shenzhen University
- Shenzhen
- People's Republic of China
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22
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Qian Y, Yuan WE, Cheng Y, Yang Y, Qu X, Fan C. Concentrically Integrative Bioassembly of a Three-Dimensional Black Phosphorus Nanoscaffold for Restoring Neurogenesis, Angiogenesis, and Immune Homeostasis. NANO LETTERS 2019; 19:8990-9001. [PMID: 31790262 DOI: 10.1021/acs.nanolett.9b03980] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Black phosphorus is well known for its excellent electromechanical properties. Although it has previously been used for therapeutic drug delivery in cancer, it has never been applied as an electroactive polymer for post-trauma tissue regeneration (e.g., in cardiac muscles and neurons). The major concern currently preventing such applications is its controversial biosafety profile in vivo. Here, we demonstrate the production of a concentrically integrative layer-by-layer bioassembled black phosphorus nanoscaffold. This scaffold has remarkable electrical conductivity, permitting smooth release into the surrounding microenvironment. We confirmed that, under mild oxidative stress, our black phosphorus nanoscaffold induced angiogenesis and neurogenesis and stimulated calcium-dependent axon regrowth and remyelination. Long-term in vivo implantation of this nanoscaffold during severe neurological defect regeneration induced negligible toxicity levels. These results provide new insight into the regenerative capability of manufactured 3D scaffolds using neuroengineered 2D black phosphorus nanomaterials.
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Affiliation(s)
- Yun Qian
- Department of Orthopedics , Shanghai Jiao Tong University Affiliated Sixth People's Hospital , Shanghai 200233 , China
| | - Wei-En Yuan
- Engineering Research Center of Cell & Therapeutic Antibody, Ministry of Education, School of Pharmacy , Shanghai Jiao Tong University , Shanghai 200240 , China
| | - Yuan Cheng
- Engineering Research Center of Cell & Therapeutic Antibody, Ministry of Education, School of Pharmacy , Shanghai Jiao Tong University , Shanghai 200240 , China
| | - Yunqi Yang
- Engineering Research Center of Cell & Therapeutic Antibody, Ministry of Education, School of Pharmacy , Shanghai Jiao Tong University , Shanghai 200240 , China
- Department of Mechanical Engineering and Materials Science , Duke University , 144 Hudson Hall, Box 90300, Durham , North Carolina 27708 , United States
| | - Xinhua Qu
- Department of Bone and Joint Surgery, Renji Hospital, School of Medicine , Shanghai Jiao Tong University School of Medicine , Shanghai , China
| | - Cunyi Fan
- Department of Orthopedics , Shanghai Jiao Tong University Affiliated Sixth People's Hospital , Shanghai 200233 , China
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23
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Zhang JL, Zhao S, Telychko M, Sun S, Lian X, Su J, Tadich A, Qi D, Zhuang J, Zheng Y, Ma Z, Gu C, Hu Z, Du Y, Lu J, Li Z, Chen W. Reversible Oxidation of Blue Phosphorus Monolayer on Au(111). NANO LETTERS 2019; 19:5340-5346. [PMID: 31274321 DOI: 10.1021/acs.nanolett.9b01796] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Practical applications of two-dimensional (2D) black phosphorus (BP) are limited by its fast degradation under ambient conditions, for which many different mechanisms have been proposed; however, an atomic level understanding of the degradation process is still hindered by the absence of bottom-up methods for the growth of large-scale few-layer black phosphorus. Recent experimental success in the fabrication of single-layer blue phosphorus provides a model system to probe the oxidation mechanism of two-dimensional (2D) phosphorene down to single-layer thicknesses. Here, we report an atomic-scale investigation of the interaction between molecular oxygen and blue phosphorus. The atomic structure of blue phosphorus and the local binding sites of oxygen have been precisely identified using qPlus-based noncontact atomic force microscopy. A combination of low-temperature scanning tunneling microscopy and X-ray photoelectron spectroscopy measurements reveal a thermally reversible oxidation process of blue phosphorus in a pure oxygen atmosphere. Our study clearly demonstrates the essential role of oxygen in the initial oxidation process, and it sheds further light on the fundamental pathways of the degradation mechanism.
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Affiliation(s)
- Jia Lin Zhang
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117542 , Singapore
| | - Songtao Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Centre for Excellence and Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei 230026 , China
| | - Mykola Telychko
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
| | - Shuo Sun
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117542 , Singapore
| | - Xu Lian
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
| | - Jie Su
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
| | - Anton Tadich
- Australian Synchrotron , 800 Blackburn Road , Clayton , Victoria 3168 , Australia
| | - Dongchen Qi
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, School of Chemistry, Physics and Mechanical Engineering , Queensland University of Technology , Brisbane , Queensland 4001 , Australia
| | - Jincheng Zhuang
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials , University of Wollongong , Wollongong , New South Wales 2525 , Australia
| | - Yue Zheng
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117542 , Singapore
| | - Zhirui Ma
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
| | - Chengding Gu
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
| | - Zehua Hu
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117542 , Singapore
| | - Yi Du
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials , University of Wollongong , Wollongong , New South Wales 2525 , Australia
| | - Jiong Lu
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Centre for Excellence and Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei 230026 , China
| | - Wei Chen
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117542 , Singapore
- Joint School of National University of Singapore and Tianjin University , International Campus of Tianjin University , Binhai New City, Fuzhou , 350207 , China
- National University of Singapore (Suzhou) Research Institute , 377 Lin Quan Street , Suzhou Industrial Park , Jiangsu 215123 , China
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24
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Width Dependent Two-Photon Absorption in Monolayer Black Phosphorus Nanoribbons. APPLIED SCIENCES-BASEL 2019. [DOI: 10.3390/app9102014] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Black phosphorus nanoribbons (BPNs) might offer alternatives to narrow-gap compound semiconductors for tunable optoelectronics in infrared region. In this work we present a quantum perturbation theory on two-photon absorption (TPA) in monolayer armchair-edged black phosphorus nanoribbons (acBPNs) employing the reduced two-band model within the long-wavelength BP Hamiltonian. The matrix elements for one-photon transition have been derived and the TPA spectrum associate with intra conduction band transition and inter band transition have been drawn. The calculations predict that the TPA coefficient in acBPNs is in the magnitude of 10−6 m/W in visible region, which is 4 orders higher than the conventional semiconductor quantum dots. And in infrared region, there is a giant TPA coefficient, which is mainly contributed from intra band transitions and can reach up to10−1 m/W. The TPA peaks can be tuned both by the width of BPNs and the electron relaxation energy.
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25
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Wang D, Yi P, Wang L, Zhang L, Li H, Lu M, Xie X, Huang L, Huang W. Revisiting the Growth of Black Phosphorus in Sn-I Assisted Reactions. Front Chem 2019; 7:21. [PMID: 30761291 PMCID: PMC6362402 DOI: 10.3389/fchem.2019.00021] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2018] [Accepted: 01/10/2019] [Indexed: 11/13/2022] Open
Abstract
Black phosphorus, an emerging layered material, exhibits promising applications in diverse fields, ranging from electronics to optics. However, controlled synthesis of black phosphorus, particularly its few-layered counterparts, is still challenging, which should be due to the unclear growth mechanism of black phosphorus. Here, taking the most commonly used Sn-I assisted synthesis of black phosphorus as an example, we propose a growth mechanism of black phosphorus crystals by monitoring the reactions and analyzing the as-synthesized products. In the proposed mechanism, Sn24P19.3I8 is the active site for the growth of black phosphorus, and the black phosphorus crystals are formed with the assistance of SnI2, following a polymerization-like process. In addition, we suggest that all Sn-I assisted synthesis of black phosphorus should share the same reaction mechanism despite the differences among Sn-I containing additives. Our results shown here should shed light on the controlled synthesis of black phosphorus and facilitate further applications of black phosphorus.
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Affiliation(s)
- Dongya Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Peng Yi
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Lu Zhang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Min Lu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Xiaoji Xie
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Ling Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials, Nanjing Tech University, Nanjing, China.,Shaanxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, China
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