Controlled Micro/Nanodome Formation in Proton-Irradiated Bulk Transition-Metal Dichalcogenides

Preparation and Modeling of Graphene Bubbles to Obtain Strain-Induced Pseudomagnetic Fields

It has been both theoretically predicted and experimentally demonstrated that strain can effectively modulate the electronic states of graphene sheets through the creation of a pseudomagnetic field (PMF). Pressurizing graphene sheets into bubble-like structures has been considered a viable approach for the strain engineering of PMFs. However, the bubbling technique currently faces limitations such as long manufacturing time, low durability, and challenges in precise control over the size and shape of the pressurized bubble. Here, we propose a rapid bubbling method based on an oxygen plasma chemical reaction to achieve rapid induction of out-of-plane deflections and in-plane strains in graphene sheets. We introduce a numerical scheme capable of accurately resolving the strain field and resulting PMFs within the pressurized graphene bubbles, even in cases where the bubble shape deviates from perfect spherical symmetry. The results provide not only insights into the strain engineering of PMFs in graphene but also a platform that may facilitate the exploration of the strain-mediated electronic behaviors of a variety of other 2D materials.

Reversible flexoelectric domain engineering at the nanoscale in van der Waals ferroelectrics

The universal flexoelectric effect in solids provides a mechanical pathway for controlling electric polarization in ultrathin ferroelectrics, eliminating potential material breakdown from a giant electric field at the nanoscale. One challenge of this approach is arbitrary implementation, which is strongly hindered by one-way switching capability. Here, utilizing the innate flexibility of van der Waals materials, we demonstrate that ferroelectric polarization and domain structures can be mechanically, reversibly, and arbitrarily switched in two-dimensional CuInP2S6 via the nano-tip imprinting technique. The bidirectional flexoelectric control is attributed to the extended tip-induced deformation in two-dimensional systems with innate flexibility at the atomic scale. By employing an elastic substrate, artificial ferroelectric nanodomains with lateral sizes as small as ~80 nm are noninvasively generated in an area of 1 μm2, equal to a density of 31.4 Gbit/in2. Our results highlight the potential applications of van der Waals ferroelectrics in data storage and flexoelectronics.

Fine-Tuning of the Excitonic Response in Monolayer WS2 Domes via Coupled Pressure and Strain Variation

We present a spectroscopic investigation of the vibrational and optoelectronic properties of WS2 domes in the 0-0.65 GPa range. The pressure evolution of the system morphology, deduced by the combined analysis of Raman and photoluminescence spectra, revealed a significant variation in the dome's aspect ratio. The modification of the dome shape caused major changes in the mechanical properties of the system resulting in a sizable increase of the out-of-plane compressive strain while keeping the in-plane tensile strain unchanged. The variation of the strain gradients drives a nonlinear behavior in both the exciton energy and radiative recombination intensity, interpreted as the consequence of a hybridization mechanism between the electronic states of two distinct minima in the conduction band. Our results indicate that pressure and strain can be efficiently combined in low dimensional systems with unconventional morphology to obtain modulations of the electronic band structure not achievable in planar crystals.

Quantum Dots in Transition Metal Dichalcogenides Induced by Atomic-Scale Deformations

Single-photon emission from monolayer transition metal dichalcogenides requires the existence of localized, atom-like states within the extended material. Here, we predict from first-principles the existence of quantum dots around atomic-scale protrusions, which result from substrate roughness or particles trapped between layers. Using density functional theory, we find such deformations to give rise to local membrane stretching and curvature, which lead to the emergence of gap states. Having enhanced outer-surface localization, they are prone to mixing with states pertaining to chalcogen vacancies and adsorbates. If the deformation is sharp, the conduction band minimum furthermore assumes atomic and valley-mixed character, potentially enabling quantum light emission. When such structural defects are arranged in an array, the new states couple to form energetically separated sub-bands, holding promise for intriguing superlattice dynamics. All of the observed features are shown to be closely linked to elastic, deformation-induced intra- and intervalley scattering processes.

Locally Strained 2D Materials: Preparation, Properties, and Applications

2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is noninvasive and nanoscale and can contribute to the investigation of time- and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Viscous fingering instabilities in spontaneously formed blisters of MoS2 multilayers

The viscous fingering in the Hele-Shaw cell can be suppressed by replacing the upper-bounding rigid plate with an elastic membrane. Recently, graphene multilayers while polymer-curing-induced blistering showed the dynamical evolution of viscous fingering patterns on a viscoelastic substrate due to their thickness-dependent elasticity. Under certain conditions, the elastic solid-based instability couples with the viscoelastic substrate-based instability. The mechanisms underlying such a coupling in the blisters of 2D materials and the dynamical evolution of the viscous fingering patterns underneath the blisters are yet to be addressed. Herein, we investigate the viscous fingering instabilities in spontaneously formed blisters of MoS2 multilayers, and provide thorough analytical and experimental insights for the elucidation of the dynamical evolution of the viscous fingering patterns and the coupled instabilities in the blisters. We also estimate the interfacial adhesion energy of the MoS2 flakes over a (poly)vinyl alcohol (PVA) substrate and the confinement pressure inside the MoS2 blisters using a conventional blister-test model. It is observed that the presence of instability gives rise to anomalies in the modeling of the blister test. The adhesion mechanical insights would be beneficial for fundamental research as well as practical applications of 2D material blisters in flexible optoelectronics.

Exciton-Phonon Interactions in Strained Domes of Monolayer MoS2 Studied by Resonance Raman Spectroscopy

This work describes a resonance Raman study performed in the domes of monolayer MoS2 using 23 different laser excitation energies covering the visible and near-infrared (NIR) ranges. The multiple excitation results allowed us to investigate the exciton-phonon interactions of different phonons (A'1, E', and LA) with different excitonic optical transitions in biaxially strained monolayer MoS2. The analysis of the intensities of the two first-order peaks, A'1 and E', and the double-resonance 2LA Raman band as a function of the laser excitation furnished the values of the energies of the indirect exciton and the direct excitonic transitions in the strained MoS2 domes. It was noticed that the out-of-plane A'1 phonon mode is significantly enhanced only by the indirect exciton I and the C exciton, whereas the in-plane E' mode is only enhanced by the C exciton of the MoS2 dome, thus revealing the weak interaction of these phonons with the A and B excitons in the strained MoS2 domes. On the other hand, the 2LA Raman band is significantly enhanced at the indirect exciton I and by the A (or B) exciton but not enhanced by the C exciton, thus showing that the LA edge phonons that participate in the double-resonance process in MoS2 have a weak interaction with the C exciton.

Trapping Hydrogen Molecules between Perfect Graphene

There is a lack of deep understanding of hydrogen intercalation into graphite due to many challenges faced during characterization of the systems. Therefore, a suitable route to trap isolated hydrogen molecules (H2) between the perfect graphite lattices needs to be found. Here we realize the formation of hydrogen bubbles in graphite with controllable density, size, and layer number. We find that the molecular H2 cannot be diffused between nor escape from the defect-free graphene lattices, and it remains stable in the pressurized bubbles up to 400 °C. The internal pressure of H2 inside the bubbles is strongly temperature dependent, and it decreases as the temperature rises. The proton permeation rate can be estimated at a specific plasma power. The producing method of H2 bubbles offers a useful way for storing hydrogen in layered materials, and these materials provide a prospective research platform for studying nontrivial quantum effects in confined H2.

Solid-liquid phase transition inside van der Waals nanobubbles: an atomistic perspective

The liquid-solid phase transition during the confinement of a van der Waals bubble is studied using molecular dynamics simulations. In particular, argon is considered inside a graphene bubble, where the outer membrane is a sheet of graphene, and the substrate is atomically flat graphite. A methodology to avoid metastable states of argon is developed and implemented to derive a melting curve of trapped argon. It is found that in the confinement, the melting curve of argon shifts toward higher temperatures, and the temperature shift is about 10-30 K. The ratio of the height to the radius of the GNB (H/R) decreases with increasing temperature. It also most likely undergoes an abrupt change through the liquid-crystal phase transition. The semi-liquid state of argon was detected in the transition region. At this state, the argon structure stays layered, but the atoms travel distances of several lattice constants.

Directly measuring flexoelectric coefficients μ11 of the van der Waals materials

Flexoelectricity originates from the electromechanical coupling interaction between strain gradient and polarization, broadly applied in developing electromechanical and energy devices. However, the study of quantifying the longitudinal flexoelectric coefficient (μ₁₁) which is important for the application of atomic-scale two-dimensional (2D) materials is still in a slow-moving stage, owing to the technical challenges. Based on the free-standing suspension structure, this paper proposes a widely applicable method and a mensurable formula for determining the μ₁₁ constant of layer-dependent 2D materials with high precision. A combination of in situ micro-Raman spectroscopy and piezoresponse force microscopy (PFM) imaging was used to quantify the strain distribution and effective out-of-plane electromechanical coupling, respectively, for μ₁₁ constant calculation. The μ₁₁ constants and their physical correlation with the variable mechanical conditions of naturally bent structures have been obtained extensively for the representative mono-to-few layered MX₂ family (M = W and Mo; X = S and Se), and the result is perfectly consistent with the estimated order-of-magnitude of the μ₁₁ value (about 0.065) of monolayer MoS₂. The quantification of the flexoelectric constant in this work not only promotes the understanding of mechanical and electromechanical properties in van der Waals materials, but also paves the way for developing novel 2D nano-energy devices and mechanical transducers based on flexoelectric effects.

Variant Plateau's law in atomically thin transition metal dichalcogenide dome networks

Since its fundamental inception from soap bubbles, Plateau's law has sparked extensive research in equilibrated states. However, most studies primarily relied on liquids, foams or cellular structures, whereas its applicability has yet to be explored in nano-scale solid films. Here, we observed a variant Plateau's law in networks of atomically thin domes made of solid two-dimensional (2D) transition metal dichalcogenides (TMDs). Discrete layer-dependent van der Waals (vdWs) interaction energies were experimentally and theoretically obtained for domes protruding in different TMD layers. Significant surface tension differences from layer-dependent vdWs interaction energies manifest in a variant of this fundamental law. The equivalent surface tension ranges from 2.4 to 3.6 N/m, around two orders of magnitude greater than conventional liquid films, enabling domes to sustain high gas pressure and exist in a fundamentally variant nature for several years. Our findings pave the way towards exploring variant discretised states with applications in opto-electro-mechanical devices.

Hoop compression driven instabilities in spontaneously formed multilayer graphene blisters over a polymeric substrate

The blistering of elastic membranes is prone to elastic-solid as well as substrate-based mechanical instabilities. The solid-based instabilities have been well-explored in the mechanically indented blisters of elastic membranes over the rigid/solid substrates, but an integrated study illustrating the underlying mechanism for the onset of solid as well as substrate-based instabilities in the spontaneous blistering of a 2D material is still lacking in the literature. In this article, an extensive experimental as well as analytical analysis of the spontaneous blister-formation in the multilayer graphene (MLG) flakes over a polymeric substrate is reported, which elucidates the involved mechanism and the governing parameters behind the development of elastic-solid as well as viscoelastic-substrate based instabilities. Herein, a 'blister-collapse model' is proposed, which infers that the suppression of the hoop compression, resulting from the phase-transition of the confined matter, plays a crucial role in the development of the instabilities. The ratio of blister-height to flake-thickness is a direct consequence of the taper-angle of the MLG blister and the thickness-dependent elasticity of the upper-bounding MLG flake, which shows a significant impact on the growth-dynamics of the viscous fingering pattern (viscoelastic-substrate based instability) under the MLG blister.

Extraordinary Phonon Displacement and Giant Resonance Raman Enhancement in WSe2/WS2 Moiré Heterostructures

Twisted van der Waals heterostructures are known to induce surprisingly diverse and intriguing phenomena, such as correlated electronic phase and unconventional optical properties. This can be realized by controlled rotation of adjacent atomic planes, which provides an uncommon way to manipulate inelastic light-matter interactions. Here, we discover an extraordinary blue shift of 5-6 wavenumbers for high-frequency phonon modes in WS₂/WSe₂ twisted heterobilayers, captured meticulously using Raman spectroscopy. Phonon spectra displace rapidly over a subtle change in interlayer twist angle owing to heterostrain and atomic reconstruction from the Moiré pattern. First-order linear coefficients of the phonon modes in twisted heterostructures are further found to increase largely compared to their monolayer counterpart and vary immensely with the twist angle. Exceptional and extravagant enhancement of up to 50-fold is observed in the Raman vibrational intensity at a specific twist angle; this is largely influenced by the resonance process derived from a simple critical twist angle model. In addition, we depict how the resonance can be modulated by changing the thermal conditions and also the stacking angle. Therefore, our work further highlights the twist-driven phonon dynamics in pristine two-dimensional heterostructures, adding vital insight into Moiré physics and promoting comprehensive understanding of structural and optical properties in Moiré superlattices.

Extraordinary Nonlinear Optical Interaction from Strained Nanostructures in van der Waals CuInP2S6

Local strain engineering and structural modification of 2D materials furnish benevolent control over their optoelectronic properties and provide an exciting approach to tune light-matter interaction in layered materials. Application of strain at the nanoscale is typically obtained through permanently deformed nanostructures such as nanowrinkles, which yield large band gap modulation, photoluminescence enhancement, and surface potential. Ultrathin transition metal dichalcogenides (TMDs) have been greatly analyzed for such purposes. Herein, we extend strain-induced nanoengineering to an emerging 2D material, CuInP₂S₆ (CIPS), and visualize extraordinary control over nonlinear light-matter interaction. Wrinkle nanostructures exhibit ∼160-fold enhancement in second harmonic generation (SHG) compared to unstrained regions, which is additionally influenced by a change in the dielectric environment. The SHG enhancement was significantly modulated by the percentage of applied strain which was numerically estimated. Furthermore, polarization-dependent SHG revealed quenching and enhancement in the parallel and perpendicular directions, respectively, due to the direction of the compressive vector. Our work provides an important advancement in controlling optoelectronic properties beyond TMDs for imminent applications in flexible electronics.

Engineering the Dynamics and Transport of Excitons, Trions, and Biexcitons in Monolayer WS2

The study of transport and diffusion dynamics of quasi-particles such as excitons, trions, and biexcitons in two-dimensional (2D) semiconductors has opened avenues for their application in high-speed excitonic and optoelectronic devices. However, long-range transport and fast diffusion of these quasi-particles have not been reported for 2D systems such as transition metal dichalcogenides (TMDCs). The reported diffusion coefficients from TMDCs are low, limiting their use in high-speed excitonic devices and other optoelectronic applications. Here, we report the highest exciton diffusion coefficient value in monolayer WS₂ achieved via engineering the radiative lifetime and diffusion lengths using static back-gate voltage and substrate engineering. Electrostatic doping is observed to modulate the radiative lifetime and in turn the diffusion coefficient of excitons by ∼three times at room temperature. By combining electrostatic doping and substrate engineering, we push the diffusion coefficient to an extremely high value of 86.5 cm²/s, which has not been reported before in TMDCs and is even higher than the values in some 1D systems. At low temperatures, we further report the control of dynamic and spatial diffusion of excitons, trions, and biexcitons from WS₂. The electrostatic control of dynamics and transport of these quasi-particles in monolayers establishes monolayer TMDCs as ideal candidates for high-speed excitonic circuits, optoelectronic, and photonic device applications.

Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers

Extraordinary optoelectronic properties of van der Waals (vdW) heterostructures can be tuned via strain caused by mechanical deformation. Here, we demonstrate strong and localized luminescence in the ultraviolet region from interface bubbles between stacked multilayers of hexagonal boron nitride (hBN). Compared to bubbles in stacked monolayers, bubbles formed by stacking vdW multilayers show distinct mechanical behavior. We use this behavior to elucidate radius- and thickness-dependent bubble geometry and the resulting strain across the bubble, from which we establish the thickness-dependent bending rigidity of hBN multilayers. We then utilize the polymeric material confined within the bubbles to modify the bubble geometry under electron beam irradiation, resulting in strong luminescence and formation of optical standing waves. Our results open a route to design and modulate microscopic-scale optical cavities via strain engineering in vdW materials, which we suggest will be relevant to both fundamental mechanical studies and optoelectronic applications.

Strain-Induced Exciton Hybridization in WS_{2} Monolayers Unveiled by Zeeman-Splitting Measurements

Mechanical deformations and ensuing strain are routinely exploited to tune the band gap energy and to enhance the functionalities of two-dimensional crystals. In this Letter, we show that strain leads also to a strong modification of the exciton magnetic moment in WS_{2} monolayers. Zeeman-splitting measurements under magnetic fields up to 28.5 T were performed on single, one-layer-thick WS_{2} microbubbles. The strain of the bubbles causes a hybridization of k-space direct and indirect excitons resulting in a sizable decrease in the modulus of the g factor of the ground-state exciton. These findings indicate that strain may have major effects on the way the valley number of excitons can be used to process binary information in two-dimensional crystals.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2 /SnS Heterostructures

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertaining to their properties and interactions. One such gap is the interaction between these materials and hydrogen, a potentially vital future energy vector and ubiquitous processing gas in the semiconductor industry. This work reports on the interaction of hydrogen with the vdW semiconductor SnS₂ , where molecular hydrogen (H₂ ) and H-ions induce a controlled chemical conversion into semiconducting-SnS or to β-Sn. This hydrogen-driven reaction is facilitated by the different oxidation states of Sn and is successfully applied to form SnS₂ /SnS heterostructures with uniform layers, atomically flat interfaces and well-aligned crystallographic axes. This approach is scalable and offers a route for engineering materials at the nanoscale for semiconductor technologies based on the earth-abundant elements Sn and S, a promising result for a wide range of potential applications.

Tailoring Photoluminescence by Strain-Engineering in Layered Perovskite Flakes

Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D (C₆H₅CH₂CH₂NH₃)₂Cs₃Pb₄Br₁₃ HOIP subject to biaxial strain induced by a SiO₂ ring platform on which flakes are placed by viscoelastic stamping. At 80 K, we found that a strain of <1% can change the PL emission from a single peak (unstrained) to three well-resolved peaks. Supported by micro-Raman spectroscopy, we show that the thermomechanically generated strain modulates the bandgap due to changes in the octahedral tilting and lattice expansion. Mechanical simulations demonstrate the coexistence of tensile and compressive strain along the flake. The observed PL peaks add an interesting feature to the rich phenomenology of photoluminescence in 2D HOIPs, which can be exploited in tailored sensing and optoelectronic devices.

Strong Substrate Strain Effects in Multilayered WS2 Revealed by High-Pressure Optical Measurements

The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements to thoroughly describe the effect of strain and dielectric environment onto the electronic band structure and optical properties of a few-layered transition-metal dichalcogenide. Our results show that WS₂ remains fully adhered to the substrate at least up to a -0.6% in-plane compressive strain for a wide range of substrate materials. We provide a useful model to describe effect of strain on the optical gap energy. The corresponding experimentally determined out-of-plane and in-plane stress gauge factors for WS₂ monolayers are -8 and 24 meV/GPa, respectively. The exceptionally large in-plane gauge factor confirms transition metal dichalcogenides as very promising candidates for flexible functionalities. Finally, we discuss the pressure evolution of an optical transition closely lying to the A exciton for bulk WS₂ as well as the direct-to-indirect transition of the monolayer upon compression.

Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2

Strain plays an important role for the optical properties of monolayer transition metal dichalcogenides (TMDCs). Here, we investigate strain effects in a monolayer MoSe₂ sample with a large bubble region using μ-Raman, second harmonic generation (SHG), μ-photoluminescence and magneto μ-photoluminescence at low temperature. Remarkably, our results reveal the presence of a non-uniform strain field and the observation of emission peaks at lower energies which are the signatures of exciton and trion quasiparticles red-shifted by strain effects in the bubble region, in agreement with our theoretical predictions. Furthermore, we have observed that the emission in the strained region decreases the trion binding energy and enhances the valley g-factors as compared to non-strained regions. Considering uniform biaxial strain effects within the unit cell of the TMDC monolayer (ML), our first principles calculations predict the observed enhancement of the exciton valley Zeeman effect. In addition, our results suggest that the exciton-trion fine structure plays an important role for the optical properties of strained TMDC ML. In summary, our study provides fundamental insights on the behaviour of excitons and trions in strained monolayer MoSe₂ which are particularly relevant to properly characterize and understand the fine structure of excitonic complexes in strained TMDC systems/devices.

Vibrational Properties in Highly Strained Hexagonal Boron Nitride Bubbles

Hexagonal boron nitride (hBN) is widely used as a protective layer for few-atom-thick crystals and heterostructures (HSs), and it hosts quantum emitters working up to room temperature. In both instances, strain is expected to play an important role, either as an unavoidable presence in the HS fabrication or as a tool to tune the quantum emitter electronic properties. Addressing the role of strain and exploiting its tuning potentiality require the development of efficient methods to control it and of reliable tools to quantify it. Here we present a technique based on hydrogen irradiation to induce the formation of wrinkles and bubbles in hBN, resulting in remarkably high strains of ∼2%. By combining infrared (IR) near-field scanning optical microscopy and micro-Raman measurements with numerical calculations, we characterize the response to strain for both IR-active and Raman-active modes, revealing the potential of the vibrational properties of hBN as highly sensitive strain probes.

Two-dimensional multiferroics

Due to unprecedented application prospects such as high-density and low-power multistate storage, spintronics and nanoelectronics, two-dimensional (2D) multiferroics, coupled with at least two ferroic orders, have gotten a lot of interest in recent years. Multiple functions can be achieved in 2D multiferroics via coupling phenomena such as magnetoelectricity, piezoelectricity, and magnetoelasticity, which offers technical support for the creation of multifunctional devices. The research progress of 2D ferromagnetic-ferroelectric multiferroic materials, ferroelectric-ferroelastic multiferroic materials, and ferromagnetic-ferroelastic materials in recent years is reviewed in this paper. The categorization of 2D multiferroics is explored in terms of the multiple sources of ferroelectricity. The top-down approaches and the bottom-up methods used to fabricate 2D multiferroics materials are introduced. Finally, the authors outline potential research prospects and application scenarios for 2D multiferroic materials.

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

Exceptional Elasticity of Microscale Constrained MoS2 Domes

The outstanding mechanical performances of two-dimensional (2D) materials make them appealing for the emerging fields of flextronics and straintronics. However, their manufacturing and integration in 2D crystal-based devices rely on a thorough knowledge of their hardness, elasticity, and interface mechanics. Here, we investigate the elasticity of highly strained monolayer-thick MoS₂ membranes, in the shape of micrometer-sized domes, by atomic force microscopy (AFM)-based nanoindentation experiments. A dome's crushing procedure is performed to induce a local re-adhesion of the dome's membrane to the bulk substrate under the AFM tip's load. It is worth noting that no breakage, damage, or variation in size and shape are recorded in 95% of the crushed domes upon unloading. Furthermore, such a procedure paves the way to address quantitatively the extent of the van der Waals interlayer interaction and adhesion of MoS₂ by studying pull-in instabilities and hysteresis of the loading-unloading cycles. The fundamental role and advantage of using a superimposed dome's constraint are also discussed.

Experimental Adhesion Energy in van der Waals Crystals and Heterostructures from Atomically Thin Bubbles

The formation of gas-filled bubbles on the surface of van der Waals crystals provides an ideal platform whereby the interplay of the elastic parameters and interlayer forces can be suitably investigated. Here, we combine experimental and numerical efforts to study the morphology of the bubbles at equilibrium and highlight unexpected behaviors that contrast with the common assumptions. We exploit such observations to develop an accurate analytical model to describe the shape and strain of the bubbles and exploit it to measure the adhesion energy between a variety of van der Waals crystals, showing sizable material-dependent trends.

Tailoring the optical properties of dilute nitride semiconductors at the nanometer scale

We report on the innovative approaches we developed for the fabrication of site-controlled semiconductor nanostructures [e.g. quantum dots (QDs), nanowires], based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductor alloys [e.g. Ga(AsN) and (InGa)(AsN)]. In such systems, the formation of stable nitrogen-hydrogen complexes removes the effects nitrogen has on the alloy properties, which in turn paves the way to the direct engineering of the material's electronic-and, thus, optical-properties: not only the bandgap energy, but also the refractive index and the polarization properties of the system can indeed be tailored with high precision and in a reversible manner. Here, lithographic approaches and/or plasmon-assisted optical irradiation-coupled to the ultra-sharp diffusion profile of hydrogen in dilute nitrides-are employed to control the hydrogen implantation and/or removal process at a nanometer scale. This results in a highly deterministic control of the spatial and spectral properties of the fabricated nanostructures, eventually obtaining semiconductor nanowires with controlled polarization properties, as well as site-controlled QDs with an extremely high control on their spatial and spectral properties. The nanostructures fabricated with these techniques, whose optical properties have also been simulated by finite-element-method calculations, are naturally suited for a deterministic coupling in optical nanocavities (i.e. photonic crystal cavities and circular Bragg resonators) and are therefore of potential interest for emerging quantum technologies.

Towards free-standing graphane: atomic hydrogen and deuterium bonding to nano-porous graphene

Graphane is formed by bonding hydrogen (and deuterium) atoms to carbon atoms in the graphene mesh, with modification from the pure planar sp² bonding towards an sp³ configuration. Atomic hydrogen (H) and deuterium (D) bonding with C atoms in fully free-standing nano porous graphene (NPG) is achieved, by exploiting low-energy proton (or deuteron) non-destructive irradiation, with unprecedented minimal introduction of defects, as determined by Raman spectroscopy and by the C 1s core level lineshape analysis. Evidence of the H- (or D-) NPG bond formation is obtained by bringing to light the emergence of a H- (or D-) related sp³-distorted component in the C 1s core level, clear fingerprint of H-C (or D-C) covalent bonding. The H (or D) bonding with the C atoms of free-standing graphene reaches more than 1/4 (or 1/3) at% coverage. This non-destructive H-NPG (or D-NPG) chemisorption is very stable at high temperatures up to about 800 K, as monitored by Raman and x-ray photoelectron spectroscopy, with complete healing and restoring of clean graphene above 920 K. The excellent chemical and temperature stability of H- (and D-) NPG opens the way not only towards the formation of semiconducting graphane on large-scale samples, but also to stable graphene functionalisation enabling futuristic applications in advanced detectors for the β-spectrum analysis.

Deuterium Adsorption on Free-Standing Graphene

A suitable way to modify the electronic properties of graphene—while maintaining the exceptional properties associated with its two-dimensional (2D) nature—is its functionalisation. In particular, the incorporation of hydrogen isotopes in graphene is expected to modify its electronic properties leading to an energy gap opening, thereby rendering graphene promising for a widespread of applications. Hence, deuterium (D) adsorption on free-standing graphene was obtained by high-energy electron ionisation of D2 and ion irradiation of a nanoporous graphene (NPG) sample. This method allows one to reach nearly 50 at.% D upload in graphene, higher than that obtained by other deposition methods so far, towards low-defect and free-standing D-graphane. That evidence was deduced by X-ray photoelectron spectroscopy of the C 1s core level, showing clear evidence of the D-C sp3 bond, and Raman spectroscopy, pointing to remarkably clean and low-defect production of graphane. Moreover, ultraviolet photoelectron spectroscopy showed the opening of an energy gap in the valence band. Therefore, high-energy electron ionisation and ion irradiation is an outstanding method for obtaining low defect D-NPG with a high D upload, which is very promising for the fabrication of semiconducting graphane on large scale.

Towards future physics and applications via two-dimensional material NEMS resonators

Two-dimensional materials (2Dm) offer a unique insight into the world of quantum mechanics including van der Waals (vdWs) interactions, exciton dynamics and various other nanoscale phenomena. 2Dm are a growing family consisting of graphene, hexagonal-Boron Nitride (h-BN), transition metal dichalcogenides (TMDs), monochalcogenides (MNs), black phosphorus (BP), MXenes and 2D organic crystals such as small molecules (e.g., pentacene, C8 BTBT, perylene derivatives, etc.) and polymers (e.g., COF and MOF, etc.). They exhibit unique mechanical, electrical, optical and optoelectronic properties that are highly enhanced as the surface to volume ratio increases, resulting from the transition of bulk to the few- to mono- layer limit. Such unique attributes include the manifestation of highly tuneable bandgap semiconductors, reduced dielectric screening, highly enhanced many body interactions, the ability to withstand high strains, ferromagnetism, piezoelectric and flexoelectric effects. Using 2Dm for mechanical resonators has become a promising field in nanoelectromechanical systems (NEMS) for applications involving sensors and condensed matter physics investigations. 2Dm NEMS resonators react with their environment, exhibit highly nonlinear behaviour from tension induced stiffening effects and couple different physics domains. The small size and high stiffness of these devices possess the potential of highly enhanced force sensitivities for measuring a wide variety of un-investigated physical forces. This review highlights current research in 2Dm NEMS resonators from fundamental physics and an applications standpoint, as well as presenting future possibilities using these devices.

Direct Measurement of Folding Angle and Strain Vector in Atomically Thin WS2 Using Second-Harmonic Generation

Structural engineering techniques such as local strain engineering and folding provide functional control over critical optoelectronic properties of 2D materials. Local strain engineering at the nanoscale level is practically achieved via permanently deformed wrinkled nanostructures, which are reported to show photoluminescence enhancement, bandgap modulation, and funneling effect. Folding in 2D materials is reported to tune optoelecronic properties via folding angle dependent interlayer coupling and symmetry variation. The accurate and efficient monitoring of local strain vector and folding angle is important to optimize the performance of optoelectronic devices. Conventionally, the accurate measurement of both strain amplitude and strain direction in wrinkled nanostructures requires the combined usage of multiple tools resulting in manufacturing lead time and cost. Here, we demonstrate the usage of a single tool, polarization-dependent second-harmonic generation (SHG), to determine the folding angle and strain vector accurately and efficiently in ultrathin WS₂. The folding angle in trilayer WS₂ folds exhibiting 1-9 times SHG enhancement is probed through variable approaches such as SHG enhancement factor, maxima and minima SHG phase difference, and linear dichroism. In compressive strain induced wrinkled nanostructures, strain-dependent SHG quenching and enhancement is observed parallel and perpendicular, respectively, to the direction of the compressive strain vector, allowing us to determine the local strain vector accurately using a photoelastic approach. We further demonstrate that SHG is highly sensitive to band-nesting-induced transition (C-peak), which can be significantly modulated by strain. Our results show SHG as a powerful probe to folding angle and strain vector.

Functionalization of Molybdenum Disulfide via Plasma Treatment and 3-Mercaptopropionic Acid for Gas Sensors

Monolayer and multilayer molybdenum disulfide (MoS₂) materials are semiconductors with direct/indirect bandgaps of 1.2-1.8 eV and are attractive due to their changes in response to electrical, physicochemical, biological, and mechanical factors. Since the desired electrical properties of MoS₂ are known, research on its electrical properties has increased, with focus on the deposition and growth of large-area MoS₂ and its functionalization. While research on the large-scale production of MoS₂ is actively underway, there is a lack of studies on functionalization approaches, which are essential since functional groups can help to dissolve particles or provide adequate reactivity. Strategies for producing films of functionalized MoS₂ are rare, and what methods do exist are either complex or inefficient. This work introduces an efficient way to functionalize MoS₂. Functional groups are formed on the surface by exposing MoS₂ with surface sulfur vacancies generated by plasma treatment to 3-mercaptopropionic acid. This technique can create 1.8 times as many carboxyl groups on the MoS₂ surface compared with previously reported strategies. The MoS₂-based gas sensor fabricated using the proposed method shows a 2.6 times higher sensitivity and much lower detection limit than the untreated device.

The Interaction of Hydrogen with the van der Waals Crystal γ-InSe

The emergence of the hydrogen economy requires development in the storage, generation and sensing of hydrogen. The indium selenide ( γ -InSe) van der Waals (vdW) crystal shows promise for technologies in all three of these areas. For these applications to be realised, the fundamental interactions of InSe with hydrogen must be understood. Here, we present a comprehensive experimental and theoretical study on the interaction of γ -InSe with hydrogen. It is shown that hydrogenation of γ -InSe by a Kaufman ion source results in a marked quenching of the room temperature photoluminescence signal and a modification of the vibrational modes of γ -InSe, which are modelled by density functional theory simulations. Our experimental and theoretical studies indicate that hydrogen is incorporated into the crystal preferentially in its atomic form. This behaviour is qualitatively different from that observed in other vdW crystals, such as transition metal dichalcogenides, where molecular hydrogen is intercalated in the vdW gaps of the crystal, leading to the formation of "bubbles" for hydrogen storage.

In-Situ Annealing and Hydrogen Irradiation of Defect-Enhanced Germanium Quantum Dot Light Sources on Silicon

While light-emitting nanostructures composed of group-IV materials fulfil the mandatory compatibility with CMOS-fabrication methods, factors such as the structural stability of the nanostructures upon thermal annealing, and the ensuing photoluminescence (PL) emission properties, are of key relevance. In addition, the possibility of improving the PL efficiency by suitable post-growth treatments, such as hydrogen irradiation, is important too. We address these issues for self-assembled Ge quantum dots (QDs) that are co-implanted with Ge ions during their epitaxial growth. The presence of defects introduced by the impinging Ge ions results in pronounced PL-emission at telecom wavelengths up to room temperature (RT) and above. This approach allows us to overcome the severe limitations of light generation in the indirect-band-gap group-IV materials. By performing in-situ annealing, we demonstrate a high PL-stability of the defect-enhanced QD (DEQD) system against thermal treatment up to 600 °C for at least 2 h, even though the Ge QDs are structurally affected by Si/Ge intermixing via bulk diffusion. The latter, in turn, allows for emission tuning of the DEQDs over the entire telecom wavelength range from 1.3 µm to 1.55 µm. Two quenching mechanisms for light-emission are discussed; first, luminescence quenching at high PL recording temperatures, associated with the thermal escape of holes to the surrounding wetting layer; and second, annealing-induced PL-quenching at annealing temperatures >650 °C, which is associated with a migration of the defect complex out of the QD. We show that low-energy ex-situ proton irradiation into the Si matrix further improves the light emission properties of the DEQDs, whereas proton irradiation-related optically active G-centers do not affect the room temperature luminescence properties of DEQDs.