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Zhang J, Mei B, Chen H, Sun Z. Review on synthetic approaches and PEC activity performance of bismuth binary and mixed-anion compounds for potential applications in marine engineering. Dalton Trans 2024; 53:10376-10402. [PMID: 38809139 DOI: 10.1039/d4dt01212g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Photoelectrochemical (PEC) technology in marine engineering holds significant importance due to its potential to address various challenges in the marine environment. Currently, PEC-type applications in marine engineering offer numerous benefits, including sustainable energy generation, water desalination and treatment, photodetection, and communication. Finding novel efficient photoresponse semiconductors is of great significance for the development of PEC-type techniques in the marine space. Bismuth-based semiconductor materials possess suitable and tunable bandgap structures, high carrier mobility, low toxicity, and strong oxidation capacity, which gives them great potential for PEC-type applications in marine engineering. In this paper, the structure and properties of bismuth binary and mixed-anion semiconductors have been reviewed. Meanwhile, the recent progress and synthetic approaches were discussed from the point of view of the application prospects. Finally, the issues and challenges of bismuth binary and mixed-anion semiconductors in PEC-type photodetection and hydrogen generation are analyzed. Thus, this perspective will not only stimulate the further investigation and application of bismuth binary and mixed-anion semiconductors in marine engineering but also help related practitioners understand the recent progress and potential applications of bismuth binary and mixed-anion compounds.
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Affiliation(s)
- Jiaji Zhang
- Sanya Science and Education Innovation Park, Wuhan University of Technology, Sanya 572025, China
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China.
- School of Civil Engineering and Architecture, Wuhan University of Technology, Wuhan 430070, China
- Birmingham Centre for Energy Storage & School of Chemical Engineering, University of Birmingham, Birmingham, B152TT, UK
- Hainan Yourui Cohesion Technology Co., Ltd, Sanya, 572025, China
| | - Bingchu Mei
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China.
| | - Huiyu Chen
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China.
- School of Civil Engineering and Architecture, Wuhan University of Technology, Wuhan 430070, China
| | - Zaichun Sun
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China.
- Hainan Yourui Cohesion Technology Co., Ltd, Sanya, 572025, China
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Lai J, Shi K, Qiu B, Liang J, Liu H, Zhang W, Yu G. Spacer Engineering Enables Fine-Tuned Thin Film Microstructure and Efficient Charge Transport for Ultrasensitive 2D Perovskite-Based Heterojunction Phototransistors and Optoelectronic Synapses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310002. [PMID: 38109068 DOI: 10.1002/smll.202310002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2023] [Indexed: 12/19/2023]
Abstract
2D Ruddlesden-Popper phase layered perovskites (RPLPs) hold great promise for optoelectronic applications. In this study, a series of high-performance heterojunction phototransistors (HPTs) based on RPLPs with different organic spacer cations (namely butylammonium (BA+), cyclohexylammonium (CyHA+), phenethylammonium (PEA+), p-fluorophenylethylammonium (p-F-PEA+), and 2-thiophenethylammonium (2-ThEA+)) are fabricated successfully, in which high-mobility organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene is adopted to form type II heterojunction channels with RPLPs. The 2-ThEA+-RPLP-based HPTs show the highest photosensitivity of 3.18 × 107 and the best detectivity of 9.00 × 1018 Jones, while the p-F-PEA+-RPLP-based ones exhibit the highest photoresponsivity of 5.51 × 106 A W-1 and external quantum efficiency of 1.32 × 109%, all of which are among the highest reported values to date. These heterojunction systems also mimicked several optically controllable fundamental characteristics of biological synapses, including excitatory postsynaptic current, paired-pulse facilitation, and the transition from short-term memory to long-term memory states. The device based on 2-ThEA+-RPLP film shows an ultra-high PPF index of 234%. Moreover, spacer engineering brought fine-tuned thin film microstructures and efficient charge transport/transfer, which contributes to the superior photodetection performance and synaptic functions of these RPLP-based HPTs. In-depth structure-property correlations between the organic spacer cations/RPLPs and thin film microstructure/device performance are systematically investigated.
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Affiliation(s)
- Jing Lai
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Keli Shi
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Beibei Qiu
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Jufang Liang
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Haicui Liu
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Chen X, Zhang Q, Peng J, Gao W, Yang M, Yu P, Yao J, Liang Y, Xiao Y, Zheng Z, Li J. Ideal Photodetector Based on WS 2/CuInP 2S 6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13927-13937. [PMID: 38456299 DOI: 10.1021/acsami.3c16815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.
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Affiliation(s)
- Xiqiang Chen
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Qiyang Zhang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Junhao Peng
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P. R. China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Ying Liang
- The Basic Course Department, Guangzhou Maritime University, Guangzhou 510799, Guangdong, P. R. China
| | - Ye Xiao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, P. R. China
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4
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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5
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Yang Y, Liu J, Zhao C, Liang Q, Dong W, Shi J, Wang P, Kong D, Lv L, Jia L, Wang D, Huang C, Zheng S, Wang M, Liu F, Yu P, Qiao J, Ji W, Zhou J. A Universal Strategy for Synthesis of 2D Ternary Transition Metal Phosphorous Chalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307237. [PMID: 37776266 DOI: 10.1002/adma.202307237] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 09/26/2023] [Indexed: 10/02/2023]
Abstract
The 2D ternary transition metal phosphorous chalcogenides (TMPCs) have attracted extensive research interest due to their widely tunable band gap, rich electronic properties, inherent magnetic and ferroelectric properties. However, the synthesis of TMPCs via chemical vapor deposition (CVD) is still challenging since it is difficult to control reactions among multi-precursors. Here, a subtractive element growth mechanism is proposed to controllably synthesize the TMPCs. Based on the growth mechanism, the TMPCs including FePS3 , FePSe3 , MnPS3 , MnPSe3 , CdPS3 , CdPSe3 , In2 P3 S9 , and SnPS3 are achieved successfully and further confirmed by Raman, second-harmonic generation (SHG), and scanning transmission electron microscopy (STEM). The typical TMPCs-SnPS3 shows a strong SHG signal at 1064 nm, with an effective nonlinear susceptibility χ(2) of 8.41 × 10-11 m V-1 , which is about 8 times of that in MoS2 . And the photodetector based on CdPSe3 exhibits superior detection performances with responsivity of 582 mA W-1 , high detectivity of 3.19 × 1011 Jones, and fast rise time of 611 µs, which is better than most previously reported TMPCs-based photodetectors. These results demonstrate the high quality of TMPCs and promote the exploration of the optical properties of 2D TMPCs for their applications in optoelectronics.
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Affiliation(s)
- Yang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Jijian Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Chunyu Zhao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Qingrong Liang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Jia Shi
- Institute of Information Photonics Technology and School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, 100124, China
| | - Ping Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Denan Kong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Lu Lv
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Lin Jia
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Dainan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Chun Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 10081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Meiling Wang
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Peng Yu
- School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China
| | - Jingsi Qiao
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 10081, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 10081, China
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6
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Zhang JJ, Di J, Zhao YP, Zheng HS, Song P, Tian JZ, Jiang W, Zheng YJ. Synergistic defect and doping engineering building strong bonded S-scheme heterojunction for photocatalysis. CHEMOSPHERE 2023; 344:140347. [PMID: 37793552 DOI: 10.1016/j.chemosphere.2023.140347] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Revised: 09/28/2023] [Accepted: 09/30/2023] [Indexed: 10/06/2023]
Abstract
Photocatalytic degradation of pollutants is considered a promising approach for wastewater treatment, but is hampered by low efficiency and limited understanding of degradation pathways. A novel oxygen-doped porous g-C3N4/oxygen vacancies-rich BiOCl (OCN/OVBOC) heterostructure was prepared for photocatalytic degradation of bisphenol A (BPA). The synergistic defect and doping engineering favor the formation of strong bonded interface for S-scheme mechanism. Among them, 0.3 OCN/OVBOC showed the most excellent degradation rate, which was 8 times and 4 times higher than that of pure g-C3N4 and BiOCl, respectively. This excellent performance is mainly attributed to the significantly enhanced charge separation via strong bonded interface and redox capability of the S-scheme heterojunction structure, by tuning the coordination excitation and electron localization of the catalyst via O doping and vacancies. This work provides important insights into the role of synergistic defect and doping engineering in facilitating the formation of strong bonded S-scheme heterojunction and ultimately sheds new light on the design of efficient photocatalysts.
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Affiliation(s)
- Jia-Jing Zhang
- School of Chemistry and Chemical Engineering, National Special Superfine Powder Engineering Research Center, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Jun Di
- School of Chemistry and Chemical Engineering, National Special Superfine Powder Engineering Research Center, Nanjing University of Science and Technology, Nanjing, 210094, China; Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, 321004, China.
| | - Yun-Peng Zhao
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar, 161006, China
| | - He-Shan Zheng
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar, 161006, China
| | - Pin Song
- Key Laboratory of Functional Molecular Solids, Ministry of Education, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, 241000, China
| | - Jing-Zhi Tian
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar, 161006, China
| | - Wei Jiang
- School of Chemistry and Chemical Engineering, National Special Superfine Powder Engineering Research Center, Nanjing University of Science and Technology, Nanjing, 210094, China.
| | - Yong-Jie Zheng
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar, 161006, China.
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7
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Mu H, Zhuang R, Cui N, Cai S, Yu W, Yuan J, Zhang J, Liu H, Mei L, He X, Mei Z, Zhang G, Bao Q, Lin S. Alternating BiI 3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection. ACS NANO 2023; 17:21317-21327. [PMID: 37862706 DOI: 10.1021/acsnano.3c05849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.
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Affiliation(s)
- Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Renzhong Zhuang
- Fujian Provincial Key Laboratory of Welding Quality Intelligent Evaluation, Longyan University, Longyan 364012, P. R. China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon 999077, Hong Kong, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Jian Yuan
- School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, P. R. China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Hao Liu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Zengxia Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, P. R. China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
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8
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Yu M, Zhang F, Gao W, Shen H, Kang L, Ju L, Yin H. Two-dimensional InTeClO 3: an ultrawide-bandgap material with potential application in a deep ultraviolet photodetector. Phys Chem Chem Phys 2023; 25:29241-29248. [PMID: 37874031 DOI: 10.1039/d3cp03612j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Ultrawide-bandgap semiconductors, possessing bandgaps distinctly larger than the 3.4 eV of GaN, have emerged as a promising class capable of achieving deep ultraviolet (UV) light detection. Based on first-principles calculations, we propose an unexplored two-dimensional (2D) InTeClO3 layered system with ultrawide bandgaps ranging from 4.34 eV of bulk to 4.54 eV of monolayer. Our calculations demonstrate that 2D InTeClO3 monolayer can be exfoliated from its bulk counterpart and maintain good thermal and dynamic stability at room temperature. The ultrawide bandgaps may be modulated by the small in-plane strains and layer thickness in a certain range. Furthermore, the 2D InTeClO3 monolayer shows promising electron transport behavior and strong optical absorption capacity in the deep UV range. A two-probe InTeClO3-based photodetection device has been constructed for evaluating the photocurrent. Remarkably, the effective photocurrent (5.7 A m-2 at photon energy of 4.2 eV) generation under polarized light has been observed in such a photodetector. Our results indicate that 2D InTeClO3 systems have strong photoresponse capacity in the deep UV region, accompanying the remarkable polarization sensitivity and high extinction ratio. These distinctive characteristics highlight the promising application prospects of InTeClO3 materials in the field of deep UV optoelectronics.
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Affiliation(s)
- Meiyang Yu
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Fumin Zhang
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Wenjiang Gao
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Huimin Shen
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Lili Kang
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Lin Ju
- School of Physics and Electric Engineering, Anyang Normal University, Anyang 455000, China.
| | - Huabing Yin
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
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9
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Kim B, Kim S, Lee TH, Yang D, Lee D, Sohn W, Yoon E, Park Y, Jang HW. Enhancing Performance of Ultraviolet C Photodetectors Through Single-Domain Epitaxy of Monoclinic β-Ga 2 O 3 Films and Tailored Anti-Reflection Coating. SMALL METHODS 2023:e2300933. [PMID: 37882332 DOI: 10.1002/smtd.202300933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/16/2023] [Indexed: 10/27/2023]
Abstract
Implementing high-performance ultraviolet C photodetectors (UVC PDs) based on β-Ga2 O3 films is challenging owing to the anisotropic crystal symmetry between the epitaxial films and substrates. In this study, highly enhanced state-of-the-art photoelectrical performance is achieved using single-domain epitaxy of monoclinic β-Ga2 O3 films on a hexagonal sapphire substrate. Unlike 3D β-Ga2 O3 films with twin domains, 2D β-Ga2 O3 films exhibit a single domain with a smooth surface and low concentration of point defects, which enable efficient charge separation by suppressing boundary-induced recombination. Furthermore, a tailored anti-reflection coating (ARC) is adopted as a light-absorbing medium to improve charge generation. The tailored nanostructure, which features a gradient refractive index, not only substantially reduces the reflection, but also suppresses the surface leakage current as a passivation layer. This study provides fundamental insights into the single-domain epitaxy of β-Ga2 O3 films and the application of ARC for the development of high-performance UVC PDs.
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Affiliation(s)
- Byungsoo Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seungju Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Duyoung Yang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Dongyup Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Woonbae Sohn
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Euijoon Yoon
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yongjo Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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10
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Hu Y, Song X, Jia D, Su W, Lv X, Li L, Li X, Yan Y, Jiang Y, Xia C. Strong interlayer coupling in p-Te/n-CdSe van der Waals heterojunction for self-powered photodetectors with fast speed and high responsivity. OPTICS EXPRESS 2023; 31:19804-19817. [PMID: 37381388 DOI: 10.1364/oe.489029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 05/09/2023] [Indexed: 06/30/2023]
Abstract
Self-driven photodetectors, which can detect optical signals without external voltage bias, are highly attractive in the field of low-power wearable electronics and internet of things. However, currently reported self-driven photodetectors based on van der Waals heterojunctions (vdWHs) are generally limited by low responsivity due to poor light absorption and insufficient photogain. Here, we report p-Te/n-CdSe vdWHs utilizing non-layered CdSe nanobelts as efficient light absorption layer and high mobility Te as ultrafast hole transporting layer. Benefiting from strong interlayer coupling, the Te/CdSe vdWHs exhibit stable and excellent self-powered characteristics, including ultrahigh responsivity of 0.94 A W-1, remarkable detectivity of 8.36 × 1012 Jones at optical power density of 1.18 mW cm-2 under illumination of 405 nm laser, fast response speed of 24 µs, large light on/off ratio exceeding 105, as well as broadband photoresponse (405-1064 nm), which surpass most of the reported vdWHs photodetectors. In addition, the devices display superior photovoltaic characteristics under 532 nm illumination, such as large Voc of 0.55 V, and ultrahigh Isc of 2.73 µA. These results demonstrate the construction of 2D/non-layered semiconductor vdWHs with strong interlayer coupling is a promising strategy for high-performance and low-power consumption devices.
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11
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Shin J, Yoo H. Photogating Effect-Driven Photodetectors and Their Emerging Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:882. [PMID: 36903759 PMCID: PMC10005329 DOI: 10.3390/nano13050882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/15/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.
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12
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Wang L, Wei X, Hao X, Song X, Yang G, Lu C, Chen Y, Wang L, Gao G, Tian Y. Novel Boron-rich Phosphides with High Hardness, Large Strain, and Magnetism. J Phys Chem Lett 2023; 14:1310-1317. [PMID: 36724202 DOI: 10.1021/acs.jpclett.2c03727] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Boron-rich compounds have attracted much attention due to their interesting structures and excellent properties. Here, we performed an extensive study on the different B-P stoichiometries under pressure by combining a particle swarm optimization method with first-principles calculations. At 1 atm, BP and B6P are thermodynamically stable, while other stoichiometries are metastable. Under pressure, BP and B6P remain stable relative to constituent pure solids up to 80 GPa, while other stoichiometries become unstable at relatively low pressures. A new Cmca B6P is predicted with the lowest energy at 1 atm and shows higher shear strain than the R3̅m structure, which is known to be more resistant to brittle fracture than B4C. Moreover, the predicted Pm B8P is a magnetic semiconductor with a magnetic moment of 1 μB. All these boron-rich phosphides are hard materials. The present results enrich the B-P phase diagram and promote extensive research on their excellent properties.
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Affiliation(s)
- Linyan Wang
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei066004, China
| | - Xudong Wei
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei066004, China
| | - Xiaokuan Hao
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei066004, China
| | - Xiaoxu Song
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei066004, China
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao066004, China
| | - Cheng Lu
- School of Mathematics and Physics, China University of Geosciences (Wuhan), Wuhan430074, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu610031, China
| | - Lin Wang
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei066004, China
| | - Guoying Gao
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei066004, China
| | - Yongjun Tian
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei066004, China
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Wang Y, Wang P, Wang H, Xu B, Li H, Cheng M, Feng W, Du R, Song L, Wen X, Li X, Yang J, Cai Y, He J, Wang Z, Shi J. Room-Temperature Magnetoelectric Coupling in Atomically Thin ε-Fe 2 O 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209465. [PMID: 36460029 DOI: 10.1002/adma.202209465] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 11/15/2022] [Indexed: 06/17/2023]
Abstract
2D multiferroics with magnetoelectric coupling combine the magnetic order and electric polarization in a single phase, providing a cornerstone for constructing high-density information storages and low-energy-consumption spintronic devices. The strong interactions between various order parameters are crucial for realizing such multifunctional applications, nevertheless, this criterion is rarely met in classical 2D materials at room-temperature. Here an ingenious space-confined chemical vapor deposition strategy is designed to synthesize atomically thin non-layered ε-Fe2 O3 single crystals and disclose the room-temperature long-range ferrimagnetic order. Interestingly, the strong ferroelectricity and its switching behavior are unambiguously discovered in atomically thin ε-Fe2 O3 , accompanied with an anomalous thickness-dependent coercive voltage. More significantly, the robust room-temperature magnetoelectric coupling is uncovered by controlling the magnetism with electric field and verifies the multiferroic feature of atomically thin ε-Fe2 O3 . This work not only represents a substantial leap in terms of the controllable synthesis of 2D multiferroics with robust magnetoelectric coupling, but also provides a crucial step toward the practical applications in low-energy-consumption electric-writing/magnetic-reading devices.
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Affiliation(s)
- Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Bingqian Xu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Cai
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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Yan Y, Li J, Li S, Wang M, Luo G, Song X, Zhang S, Jiang Y, Qin R, Xia C. Two-dimensional wide-bandgap GeSe 2 vertical ultraviolet photodetectors with high responsivity and ultrafast response speed. NANOSCALE ADVANCES 2022; 4:5297-5303. [PMID: 36540128 PMCID: PMC9724610 DOI: 10.1039/d2na00565d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2022] [Accepted: 09/30/2022] [Indexed: 06/17/2023]
Abstract
Germanium selenide (GeSe2), as a typical member of 2D wide bandgap semiconductors (WBSs), shows great potential in ultraviolet (UV) optoelectronics due to its excellent flexibility, superior environmental stability, competitive UV absorption coefficient, and significant spectral selectivity. However, the GeSe2-based UV photodetector suffers from high operation voltages and low photocurrent, which prevents its practical imaging applications. In this work, we report an elevated photocurrent generation in a vertical stacking graphene/GeSe2/graphene heterostructure with low operation voltage and low power consumption. Efficient collection of photoexcited carriers in GeSe2 through graphene electrodes results in outstanding UV detection properties, including a pronounced responsivity of 37.1 A W-1, a specific detectivity of 8.83 × 1011 Jones, and an ultrahigh on/off ratio (∼105) at 355 nm. In addition, building a Schottky barrier between GeSe2 and graphene and reducing the channel length can increase the photoresponse speed to ∼300 μs. These accomplishments set the stage for future optoelectronic applications of vertical 2D WBS heterostructure UV photodetectors.
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Affiliation(s)
- Yong Yan
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Jie Li
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Shasha Li
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Mengna Wang
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Gaoli Luo
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Xiaohui Song
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Suicai Zhang
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Yurong Jiang
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Ruiping Qin
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Congxin Xia
- School of Physics, Henan Normal University Xinxiang Henan province China
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15
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Li J, Zhang Y, Zhang J, Chu J, Xie L, Yu W, Zhao X, Chen C, Dong Z, Huang L, Yang L, Yu Q, Ren Z, Wang J, Xu Y, Zhang K. Chemical Vapor Deposition of Quaternary 2D BiCuSeO p-Type Semiconductor with Intrinsic Degeneracy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2207796. [PMID: 36222393 DOI: 10.1002/adma.202207796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2022] [Revised: 09/23/2022] [Indexed: 06/16/2023]
Abstract
2D BiCuSeO is an intrinsic p-type degenerate semiconductor due to its self-doping effect, which possesses great potential to fabricate high-performance 2D-2D tunnel field-effect transistors (TFETs). However, the controllable synthesis of multinary 2D materials by chemical vapor deposition (CVD) is still a challenge due to the restriction of thermodynamics. Here, the CVD synthesis of quaternary 2D BiCuSeO nanosheets is realized. As-grown BiCuSeO nanosheets with thickness down to ≈6.1 nm (≈7 layers) and domain size of ≈277 µm show excellent ambient stability. Intrinsic p-type degeneracy of BiCuSeO, capable of maintaining even in a few layers, is comprehensively unveiled. By varying the thicknesses and temperatures, the carrier concentration of BiCuSeO nanosheets can be adjusted in the range of 1019 to 1021 cm-3 , and the Hall mobility of BiCuSeO is ≈191 cm2 V-1 s-1 (at 2 K). Furthermore, taking advantage of the p-type degeneracy of BiCuSeO, a prototypical BiCuSeO/MoS2 TFET is fabricated. The emergence of the negative differential resistance trend and multifunctional diodes by modulating the gate voltage and temperature reveal the great practical implementation potential of BiCuSeO nanosheets. These results pave way for the CVD synthesis of multinary 2D materials and rational design of high-performance tunnel devices.
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Affiliation(s)
- Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Junwei Chu
- Xi'an Institute of Applied Optics, No.9, West Section of Electron Third Road, Shaanxi, Xi'an, 710065, P. R. China
| | - Liu Xie
- Yangtze Memory Technologies Co., Ltd., Wuhan, 430074, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Guangdong, 523000, P. R. China
| | - Xinxin Zhao
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Zeqian Ren
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Junyong Wang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Yijun Xu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
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16
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Liu X, Bai L, Cao X, Wu F, Yin T, Lu W. Rapid determination of SARS-CoV-2 nucleocapsid proteins based on 2D/2D MXene/P–BiOCl/Ru(bpy) 32+ heterojunction composites to enhance electrochemiluminescence performance. Anal Chim Acta 2022; 1234:340522. [PMID: 36328721 PMCID: PMC9575274 DOI: 10.1016/j.aca.2022.340522] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Revised: 09/29/2022] [Accepted: 10/12/2022] [Indexed: 11/29/2022]
Abstract
At the end of 2019, the novel coronavirus disease 2019 (COVID-19), a cluster of atypical pneumonia caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), has been known as a highly contagious disease. Herein, we report the MXene/P–BiOCl/Ru(bpy)32+ heterojunction composite to construct an electrochemiluminescence (ECL) immunosensor for SARS-CoV-2 nucleocapsid protein (CoVNP) determination. Two-dimensional (2D) material ultrathin phosphorus-doped bismuth oxychloride (P–BiOCl) is exploited and first applied in ECL. 2D architectures MXene not only act as “soft substrate” to improve the properties of P–BiOCl, but also synergistically work with P–BiOCl. Owing to the inimitable set of bulk and interfacial properties, intrinsic high electrochemical conductivity, hydrophilicity and good biocompatible of 2D/2D MXene/P–BiOCl/Ru(bpy)32+, this as-exploited heterojunction composite is an efficient signal amplifier and co-reaction accelerator in the presence of tri-n-propylamine (TPA) as a coreactant. The proposed MXene/P–BiOCl/Ru(bpy)32+-TPA system exhibits a high and stable ECL signal and achieves ECL emission quenching for “signal on-off” recognition of CoVNP. Fascinatingly, the constructed ECL biosensor towards CoVNP allows a wide linear concentration range from 1 fg/mL to 10 ng/mL and a low limit of detection (LOD) of 0.49 fg/mL (S/N = 3). Furthermore, this presented strategy sheds light on designing a highly efficient ECL nanostructure through the combination of 2D MXene architectures with 2D semiconductor materials in the field of nanomedicine. This ECL biosensor can successfully detect CoVNP in human serum, which can promote the prosperity and development of diagnostic methods of SARS-CoV-2.
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Affiliation(s)
- Xuebo Liu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials (Ministry of Education), School of Chemistry and Material Science, Shanxi Normal University, Taiyuan, 030031, China
| | - Liwei Bai
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials (Ministry of Education), School of Chemistry and Material Science, Shanxi Normal University, Taiyuan, 030031, China
| | - Xiaowei Cao
- Institute of Translational Medicine, Medical College, Yangzhou University, Yangzhou, 225001, China
| | - Feng Wu
- School of Medicine, Jiangsu University, Zhenjiang, 212013, China
| | - Tao Yin
- College of Medical Imaging, Shanxi Medical University, Taiyuan, 030001, China
| | - Wenbo Lu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials (Ministry of Education), School of Chemistry and Material Science, Shanxi Normal University, Taiyuan, 030031, China,Corresponding author
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17
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Zheng D, Zhang J, He X, Wen Y, Li P, Wang Y, Ma Y, Bai H, Alshareef HN, Zhang XX. Electrically and optically erasable non-volatile two-dimensional electron gas memory. NANOSCALE 2022; 14:12339-12346. [PMID: 35971909 DOI: 10.1039/d2nr01582j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.
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Affiliation(s)
- Dongxing Zheng
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Junwei Zhang
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, PR China
| | - Xin He
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Yan Wen
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Peng Li
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yuchen Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Yinchang Ma
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Husam N Alshareef
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Xi-Xiang Zhang
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
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18
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Gao X, Li Q, Zhu W, Li X, Guo Y. N, S co-doped graphene quantum dots promote charge separation of Bi4O5BrxI2−x solid solution and enhance visible light photocatalytic performance. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.129155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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20
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Hu X, Liu K, Cai Y, Zang SQ, Zhai T. 2D Oxides for Electronics and Optoelectronics. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200008] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Affiliation(s)
- Xiaozong Hu
- Henan Key Laboratory of Crystalline Molecular Functional Materials Henan International Joint Laboratory of Tumor Theranostical Cluster Materials Green Catalysis Center, and College of Chemistry Zhengzhou University Zhengzhou 450001 P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering University of Macau Taipa 999078 Macau P. R. China
| | - Shuang-Quan Zang
- Henan Key Laboratory of Crystalline Molecular Functional Materials Henan International Joint Laboratory of Tumor Theranostical Cluster Materials Green Catalysis Center, and College of Chemistry Zhengzhou University Zhengzhou 450001 P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China
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21
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Zeng Y, Gu P, Zhao Z, Zhang B, Lin Z, Peng Y, Li W, Zhao W, Leng Y, Tan P, Yang T, Zhang Z, Song Y, Yang J, Ye Y, Tian K, Hou Y. 2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108847. [PMID: 35102635 DOI: 10.1002/adma.202108847] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 01/30/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals (vdW) transition-metal oxyhalides with low symmetry, novel magnetism, and good stability provide a versatile platform for conducting fundamental research and developing spintronics. Antiferromagnetic FeOCl has attracted significant interest owing to its unique semiconductor properties and relatively high Néel temperature. Herein, good-quality centimeter-scale FeOCl single crystals are controllably synthesized using the universal temperature-oscillation chemical vapor transport (TO-CVT) method. The crystal structure, bandgap, and anisotropic behavior of the 2D FeOCl are explored in detail. The absorption spectrum and electrical measurements reveal that 2D FeOCl is a semiconductor with an optical bandgap of ≈2.1 eV and a resistivity of ≈10-1 Ω m at 295 K, and the bandgap increases with decreasing thickness. Strong in-plane optical and electrical anisotropies are observed in 2D FeOCl flakes, and the maximum resistance anisotropic ratio reaches 2.66 at 295 K. Additionally, the lattice vibration modes are studied through temperature-dependent Raman spectra and first-principles density functional calculations. A significant decrease in the Raman frequencies below the Néel temperature is observed, which results from the strong spin-phonon coupling effect in 2D FeOCl. This study provides a high-quality low-symmetry vdW magnetic candidate for miniaturized spintronics.
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Affiliation(s)
- Yi Zeng
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China
| | - Pingfan Gu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Zijing Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China
| | - Biao Zhang
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China
| | - Zhongchong Lin
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Yuxuan Peng
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Wei Li
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China
| | - Wanting Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China
| | - Yuchen Leng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Pingheng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Youting Song
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jinbo Yang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Yu Ye
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Kesong Tian
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China
| | - Yanglong Hou
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China
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22
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Yang W, Xin K, Yang J, Xu Q, Shan C, Wei Z. 2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges. SMALL METHODS 2022; 6:e2101348. [PMID: 35277948 DOI: 10.1002/smtd.202101348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
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Affiliation(s)
- Wen Yang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qun Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key laboratory of Materials Physics, Ministry of Education, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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23
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Dong Y, Sun Y, Liu J, Shi X, Li H, Zhang J, Li C, Yi Y, Mo S, Fan L, Jiang L. Thermally Stable Organic Field-Effect Transistors Based on Asymmetric BTBT Derivatives for High Performance Solar-Blind Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106085. [PMID: 35182036 PMCID: PMC9036011 DOI: 10.1002/advs.202106085] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/03/2022] [Indexed: 06/14/2023]
Abstract
High-performance solar-blind photodetectors are widely studied due to their unique significance in military and industrial applications. Yet the rational molecular design for materials to possess strong absorption in solar-blind region is rarely addressed. Here, an organic solar-blind photodetector is reported by designing a novel asymmetric molecule integrated strong solar-blind absorption with high charge transport property. Such alkyl substituted [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) derivatives Cn-BTBTN (n = 6, 8, and 10) can be easily assembled into 2D molecular crystals and perform high mobility up to 3.28 cm2 V-1 s-1 , which is two orders of magnitude higher than the non-substituted core BTBTN. Cn-BTBTNs also exhibit dramatically higher thermal stability than the symmetric alkyl substituted C8-BTBT. Moreover, C10-BTBTN films with the highest mobility and strongest solar-blind absorption among the Cn-BTBTNs are applied for solar-blind photodetectors, which reveal record-high photosensitivity and detectivity up to 1.60 × 107 and 7.70 × 1014 Jones. Photodetector arrays and flexible devices are also successfully fabricated. The design strategy can provide guidelines for developing materials featuring high thermal stability and stimulating such materials in solar-blind photodetector application.
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Affiliation(s)
- Yicai Dong
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Yanan Sun
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Jie Liu
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Xiaosong Shi
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Haiyang Li
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Jing Zhang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Chunlei Li
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Yuanping Yi
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Song Mo
- Key Laboratory of Science and Technology on High‐tech Polymer MaterialsChinese Academy of SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Lin Fan
- Key Laboratory of Science and Technology on High‐tech Polymer MaterialsChinese Academy of SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Lang Jiang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
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24
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Belamkadem L, Mommadi O, Boussetta R, Chnafi M, Vinasco JA, Laroze D, Pérez LM, El Moussaouy A, Meziani YM, Kasapoglu E, Tulupenko V, Duque CA. First Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots. NANOMATERIALS 2022; 12:nano12060966. [PMID: 35335780 PMCID: PMC8954822 DOI: 10.3390/nano12060966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 03/03/2022] [Accepted: 03/07/2022] [Indexed: 01/27/2023]
Abstract
Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials delivering outstanding results in various high fields. In this work, we investigated the surface properties of an electron confined in spherical ultra-thin quantum dots in the presence of an on-center or off-center donor impurity. Thus, we have developed a novel model that leads us to investigate the different nanoflake geometries by changing the spherical nanoflake coordinates (R, α, ϕ). Under the infinite confinement potential model, the study of these nanostructures is performed within the effective mass and parabolic band approximations. The resolution of the Schrödinger equation is accomplished by the finite difference method, which allows obtaining the eigenvalues and wave functions for an electron confined in the nanoflakes surface. Through the donor and electron energies, the transport, optoelectronic, and surface properties of the nanostructures were fully discussed according to their practical significance. Our findings demonstrated that these energies are more significant in the small nanoflakes area by altering the radius and the polar and azimuthal angles. The important finding shows that the ground state binding energy depends strongly on the geometry of the nanoflakes, despite having the same surface. Another interesting result is that the presence of the off-center shallow donor impurity permits controlling the binding energy, which leads to adjusting the immense behavior of the curved surface nanostructures.
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Affiliation(s)
- Laaziz Belamkadem
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
| | - Omar Mommadi
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
- Laboratory of Innovation in Science, Technology and Education, Regional Centre for the Professions of Education and Training, Oujda 60000, Morocco
- Correspondence:
| | - Reda Boussetta
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
| | - Mohamed Chnafi
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
| | - Juán A. Vinasco
- Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (J.A.V.); (D.L.)
| | - David Laroze
- Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (J.A.V.); (D.L.)
| | - Laura M. Pérez
- Departamento de Física, FACI, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile;
| | - Abdelaziz El Moussaouy
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
- Laboratory of Innovation in Science, Technology and Education, Regional Centre for the Professions of Education and Training, Oujda 60000, Morocco
| | - Yahya M. Meziani
- Group of Nanotechnology, USAL-NANOLAB, Universidad de Salamanca, 37008 Salamanca, Spain;
| | - Esin Kasapoglu
- Faculty of Science, Department of Physics, Sivas Cumhuriyet University, Sivas 58140, Turkey;
| | | | - Carlos A. Duque
- Grupo de Materia Condensada-UdeA, Facultad de Ciencias Exactas y Naturales, Instituto de Física, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín AA 1226, Colombia;
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25
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Ji S, Dong J, Ji M, Zou W, Yin S, Chen Z, Xia J. Rapid dual-channel electrons transfer via synergistic effect of LSPR effect and build-in electric field in Z-scheme W18O49/BiOBr heterojunction for organic pollutants degradation. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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26
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The simultaneous promotion of Cr (VI) photoreduction and tetracycline removal over 3D/2D Cu2O/BiOBr S-scheme nanostructures. Sep Purif Technol 2022. [DOI: 10.1016/j.seppur.2021.120023] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
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27
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Xue J, Yu Y, Yang C, Zhang K, Zhan X, Song J, Gui J, Li Y, Jin X, Gao S, Xie Y. Developing Atomically Thin Li 1.81H 0.19Ti 2O 5·2H 2O Nanosheets for Selective Photocatalytic CO 2 Reduction to CO. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:523-530. [PMID: 34932356 DOI: 10.1021/acs.langmuir.1c02944] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Solar-driven CO2 conversion to carbon-based fuels is an attractive approach to alleviate the worsening global climate change and increasing energy issues. However, exploring and designing efficient photocatalysts with excellent activity and stability still remain challenging. Herein, layered Li1.81H0.19Ti2O5·2H2O (LHTO) nanosheets were explored as the photocatalyst for photocatalytic CO2 reduction, and atomically thin LHTO nanosheets with one-unit-cell thickness were successfully constructed for photocatalytic CO2 reduction. The atomically thin LHTO nanosheets exhibited excellent performance for CO2 photoreduction to CO, with a yield rate of 4.0 μmol g-1 h-1, a selectivity of 93%, and over 25 h photostability, dramatically outperforming the bulk LHTO. The better performance of the atomically thin LHTO nanosheets was experimentally verified to benefit from more sites for CO2 adsorption, faster electron transfer rate, and a more negative conduction band edge compared with bulk LHTO. This work provided a methodological basis for designing more efficient photocatalytic CO2 reduction catalysts.
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Affiliation(s)
- Jingyu Xue
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Yu Yu
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Kaifu Zhang
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Xiaowen Zhan
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Jimei Song
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Jiaojiao Gui
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Yunkai Li
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Xin Jin
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Shan Gao
- School of Chemistry and Chemical Engineering, School of Materials Science and Engineering, Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science & Technology of China, Hefei, Anhui 230026, People's Republic of China
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28
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Chen G, Li Y, Miao Y, Liu B. Recent developments on bismuth oxyhalide-based functional nanomaterials for biomedical applications. Biomater Sci 2022; 10:5809-5830. [DOI: 10.1039/d2bm01182d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Multifunctional bismuth oxyhalide (BiOX, X = F, Cl, Br, and I) nanomaterials have great potential advantages in medical diagnostic and therapeutic applications. Pure BiOX nanomaterials have some limitations such as...
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29
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Qi Y, Zhao J, Wang H, Yan M, Guo T. Structural engineering of BiOBr nanosheets for boosted photodegradation performance toward rhodamine B. RSC Adv 2022; 12:8908-8917. [PMID: 35424843 PMCID: PMC8985173 DOI: 10.1039/d2ra00375a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Accepted: 03/11/2022] [Indexed: 11/21/2022] Open
Abstract
A series of BiOBr nanosheets were synthesized through a facile solvothermal method, whose structures were adjusted by changing solvent ratios. Their photodegradation properties toward rhodamine B (RhB) were further investigated under visible light irradiation. The photocatalytic results indicated that the B-1:3 sample showed superior photoactivity and the RhB removal efficiency attained 97% within 30 min. The outstanding photodegradation activity can be ascribed to the small particle size and thickness, suppressed e−–h+ pair recombination and more active electrons and holes. Moreover, free radical quenching experiments suggest that ·O2− and h+ play a crucial role in improving photoactivity. This work opens a new avenue to boost the removal rate of organic pollutants by engineering the solvent ratios of photocatalysts in the wastewater treatment field. A series of BiOBr nanosheets were synthesized through a facile solvothermal method, whose structures were adjusted by changing solvent ratios.![]()
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Affiliation(s)
- Yu Qi
- College of Environment Science and Engineering, Taiyuan University of Technology, No. 209 University Street, Jinzhong 030600, Shanxi, PR China
| | - Jinjiang Zhao
- College of Environment Science and Engineering, Taiyuan University of Technology, No. 209 University Street, Jinzhong 030600, Shanxi, PR China
| | - Hongtao Wang
- College of Environment Science and Engineering, Taiyuan University of Technology, No. 209 University Street, Jinzhong 030600, Shanxi, PR China
| | - Meifang Yan
- College of Environment Science and Engineering, Taiyuan University of Technology, No. 209 University Street, Jinzhong 030600, Shanxi, PR China
| | - Tianyu Guo
- College of Environment Science and Engineering, Taiyuan University of Technology, No. 209 University Street, Jinzhong 030600, Shanxi, PR China
- Shanxi Key Laboratory of Gas Energy Efficient and Clean Utilization, No. 79 Yingze West Street, Taiyuan 030024, Shanxi, PR China
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30
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Hou X, Zhao X, Zhang Y, Zhang Z, Liu Y, Qin Y, Tan P, Chen C, Yu S, Ding M, Xu G, Hu Q, Long S. High-Performance Harsh-Environment-Resistant GaO X Solar-Blind Photodetectors via Defect and Doping Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106923. [PMID: 34626038 DOI: 10.1002/adma.202106923] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Revised: 10/02/2021] [Indexed: 06/13/2023]
Abstract
Gallium oxide (Ga2 O3 ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such as space exploration and flame prewarning. However, realization of high-performance SBPDs with high tolerance toward harsh environments based on low-cost Ga2 O3 material faces great challenges. Here, defect and doping (DD) engineering towards amorphous GaOX (a-GaOX ) has been proposed to obtain ultrasensitive SBPDs for harsh condition application. Serious oxygen deficiency and doping compensation of the engineered a-GaOX film ensure the high response currents and low dark currents, respectively. Annealing item in nitrogen of DD engineering also incurs the recrystallization of material, formation of nanopores by oxygen escape, and suppression of sub-bandgap defect states. As a result, the tailored GaOX SBPD based on DD engineering not only harvests a record-high responsivity rejection ratio (R254 nm /R365 nm ) of 1.8 × 107 , 102 times higher detectivity, and 2 × 102 times faster decay speed than the control device, but also keeps a high responsivity, high photo-to-dark current ratio, and sharp imaging capability even at high temperature (280 °C) or high bias (100 V). The proposed DD engineering provides an effective strategy towards highly harsh-environment-resistant GaOX SBPDs.
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Affiliation(s)
- Xiaohu Hou
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Xiaolong Zhao
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
- Frontiers Science Center for Planetary Exploration and Emerging Technologies, University of Science and Technology of China, Hefei, 230026, China
| | - Ying Zhang
- Key Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
| | - Zhongfang Zhang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Yan Liu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Yuan Qin
- Key Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
| | - Pengju Tan
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Chen Chen
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Shunjie Yu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Mengfan Ding
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Guangwei Xu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
- Frontiers Science Center for Planetary Exploration and Emerging Technologies, University of Science and Technology of China, Hefei, 230026, China
| | - Qin Hu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
- Frontiers Science Center for Planetary Exploration and Emerging Technologies, University of Science and Technology of China, Hefei, 230026, China
| | - Shibing Long
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
- Frontiers Science Center for Planetary Exploration and Emerging Technologies, University of Science and Technology of China, Hefei, 230026, China
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Pan L, Mei H, Zhu G, Li S, Xie X, Gong S, Liu H, Jin Z, Gao J, Cheng L, Zhang L. Bi selectively doped SrTiO 3-x nanosheets enhance photocatalytic CO 2 reduction under visible light. J Colloid Interface Sci 2021; 611:137-148. [PMID: 34942487 DOI: 10.1016/j.jcis.2021.12.033] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2021] [Revised: 12/01/2021] [Accepted: 12/04/2021] [Indexed: 12/27/2022]
Abstract
Converting CO2 into chemical energy by using solar energy is an environmental strategy to achieve carbon neutrality. In this paper, two dimensionality (2D) SrTiO3-x nanosheets with oxygen vacancies were synthesized successfully. Oxygen vacancies will generate defect levels in the band structure of SrTiO3-x. So, SrTiO3-x nanosheets have good photocatalytic CO2 reduction performance under visible light. In order to further improve its photocatalytic efficiency, Bi was used to dope Sr site and Ti site in SrTiO3-x nanosheets respectively. It is found that Sr site is the adsorption site of CO2 molecules. When Bi replaced Sr, CO2 adsorption on the surface of SrTiO3-x nanosheets was weakened. When Bi replaced Ti, there has no effect on CO2 adsorption. Due to the synergistic effect of Bi doping, oxygen vacancies, and Sr active site, the 1.0% Bi-doped Ti site in SrTiO3-x (1.0% Bi-Ti-STO) had the best photocatalytic performance under visible light (λ ≥ 420 nm). CO and CH4 yields were 5.58 umol/g/h and 0.36 umol/g/h. Photocatalytic CO2 reduction path has always been the focus of exploration. The in-situ FTIR spectrum proved the step of photocatalytic CO2 reduction and COO- and COOH are important intermediates in the photocatalytic CO2 reaction.
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Affiliation(s)
- Longkai Pan
- Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072, China
| | - Hui Mei
- Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072, China.
| | - Gangqiang Zhu
- School of Physics and Information Technology, Shaanxi Normal University, Xi' an, 710062, China.
| | - Shiping Li
- Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 17035, Republic of Korea
| | - Xiaoqian Xie
- School of Physics and Information Technology, Shaanxi Normal University, Xi' an, 710062, China
| | - Siwen Gong
- School of Physics and Information Technology, Shaanxi Normal University, Xi' an, 710062, China
| | - Hongxia Liu
- Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072, China
| | - Zhipeng Jin
- Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072, China
| | - Jianzhi Gao
- School of Physics and Information Technology, Shaanxi Normal University, Xi' an, 710062, China
| | - Laifei Cheng
- Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072, China
| | - Litong Zhang
- Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072, China
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Olagunju MO, Zahran EM, Zeynaloo E, Shukla D, Cohn JL, Surnar B, Dhar S, Bachas LG, Knecht MR. Design of Pd-Decorated SrTiO 3/BiOBr Heterojunction Materials for Enhanced Visible-Light-Based Photocatalytic Reactivity. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:11986-11995. [PMID: 34608800 DOI: 10.1021/acs.langmuir.1c01537] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The development of photocatalytic materials that exploit visible light is imperative for their sustainable application in environmental remediation. While a variety of approaches have been attempted, facile routes to achieve such structures remain limited. In this contribution, a direct route for the production of a SrTiO3/BiOBr/Pd heterojunction is presented that employs a low temperature, sustainable production method. The materials were produced in a two-step process wherein BiOBr nanoplates are fabricated in the presence of the SrTiO3 nanospheres, generating a highly integrated composite material. Pd nanoparticle surface decoration was subsequently employed to facilitate and enhance charge separation lifetimes to optimize reactivity. The structures were fully characterized via a suite of approaches to confirm the final material composition and arrangement. Their reactivity was explored for the degradation of both colored and colorless model environmental pollutants, where the SrTiO3/BiOBr/Pd demonstrated significant reactivity using visible light, leading to substrate degradation in <10 min in some cases. The enhanced reactivity was attributed to the significant integration between materials, facilitating electron transfer. Such studies provide key information for the development of new materials with optimized visible-light-driven photocatalytic reactivity for sustainable environmental remediation.
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Affiliation(s)
- Mary O Olagunju
- Department of Chemistry, University of Miami, 1301 Memorial Drive, Coral Gables, Florida 33146, United States
| | - Elsayed M Zahran
- Department of Chemistry, Ball State University, Muncie, Indiana 47306, United States
| | - Elnaz Zeynaloo
- Department of Chemistry, University of Miami, 1301 Memorial Drive, Coral Gables, Florida 33146, United States
| | - Dharmendra Shukla
- Department of Physics, University of Miami, 1320 Campo Sano Drive, Coral Gables, Florida 33146, United States
| | - Joshua L Cohn
- Department of Physics, University of Miami, 1320 Campo Sano Drive, Coral Gables, Florida 33146, United States
| | - Bapurao Surnar
- Department of Biochemistry and Molecular Biology, Leonard M. Miller School of Medicine, University of Miami, 1011 NW 15th Street, Miami, Florida 33136, United States
| | - Shanta Dhar
- Department of Chemistry, University of Miami, 1301 Memorial Drive, Coral Gables, Florida 33146, United States
- Department of Biochemistry and Molecular Biology, Leonard M. Miller School of Medicine, University of Miami, 1011 NW 15th Street, Miami, Florida 33136, United States
- Sylvester Comprehensive Cancer Center, Leonard M. Miller School of Medicine, University of Miami, 1011 NW 15th Street, Miami, Florida 33136, United States
| | - Leonidas G Bachas
- Department of Chemistry, University of Miami, 1301 Memorial Drive, Coral Gables, Florida 33146, United States
- Dr. J.T. Macdonald Foundation Biomedical Nanotechnology Institute, University of Miami, UM Life Science and Technology Building, 1951 NW 7th Avenue, Suite 475, Miami, Florida 33136, United States
| | - Marc R Knecht
- Department of Chemistry, University of Miami, 1301 Memorial Drive, Coral Gables, Florida 33146, United States
- Dr. J.T. Macdonald Foundation Biomedical Nanotechnology Institute, University of Miami, UM Life Science and Technology Building, 1951 NW 7th Avenue, Suite 475, Miami, Florida 33136, United States
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33
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Yao J, Yang G. Multielement 2D layered material photodetectors. NANOTECHNOLOGY 2021; 32:392001. [PMID: 34111857 DOI: 10.1088/1361-6528/ac0a16] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/10/2021] [Indexed: 06/12/2023]
Abstract
The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi2O2X (X = S, Se, Te), EuMTe3(M = Bi, Sb), Nb2XTe4(X = Si, Ge), Ta2NiX5(X = S, Se), M2PdX6(M = Ta, Nb; X = S, Se), PbSnS2), moderate-bandgap ME2DLMs (including CuIn7Se11, CuTaS3, GaGeTe, TlMX2(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX3(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP2X6(A = Cu, Ag; B = In, Bi; X = S, Se), Ga2In4S9), as well as topological ME2DLMs (MIrTe4(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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Tian Y, Vankova N, Weidler P, Kuc A, Heine T, Wöll C, Gu Z, Zhang J. Oriented Growth of In-Oxo Chain Based Metal-Porphyrin Framework Thin Film for High-Sensitive Photodetector. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100548. [PMID: 34306983 PMCID: PMC8292912 DOI: 10.1002/advs.202100548] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Revised: 03/09/2021] [Indexed: 06/13/2023]
Abstract
The potential of metal-organic frameworks (MOFs) for applications in optoelectronics results from a unique combination of interesting photophysical properties and straightforward tunability of organic and inorganic units. Here, it is demonstrated that using MOF approach chromophores can be assembled into well-ordered 1D arrays using metal-oxo strands as lead structure, and the resulting porphyrinic rows exhibit unique photophysical properties and allow the realization of highly sensitive photodetectors. A porphyrinic MOF thin film, In-TCPP surface-coordinated MOF thin films with [021] orientation is fabricated using a layer-by-layer method, from In(NO3)3 and TCPP (5,10,15,20-(4-carboxyphenyl)porphyrin). Detailed experimental and theoretical analysis reveals that the assembly yields a structure where In-oxo strands running parallel to the substrate fix the chromophoric linkers to yield 1D arrays of porphyrins. The frontier orbitals of this highly anisotropic arrangement are localized in these columnar arrangements of porphyrins and result in high photoactivity, which is exploited to fabricate a photodetector with record (as compared to other organic materials) responsivity in visible regime of 7.28 × 1014 Jones and short rise/fall times (0.07/0.04 s). This oriented MOF thin film-based high-sensitive photodetector provides a new avenue to use inorganic, stable lead structures to assemble organic semiconductors into regular arrays, thus creating a huge potential for the fabrication of optoelectronic devices.
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Affiliation(s)
- Yi‐Bo Tian
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
| | - Nina Vankova
- Faculty of Chemistry and Food ChemistryTechnical University DresdenDresden01069Germany
| | - Peter Weidler
- Institute of Functional Interfaces (IFG)Karlsruhe Institute of Technology (KIT)Eggenstein‐Leopoldshafen76344Germany
| | - Agnieszka Kuc
- Institute of Resource EcologyHelmholtz‐Center Dresden‐RossendorfLeipzig Research BranchLeipzig04318Germany
| | - Thomas Heine
- Faculty of Chemistry and Food ChemistryTechnical University DresdenDresden01069Germany
- Institute of Resource EcologyHelmholtz‐Center Dresden‐RossendorfLeipzig Research BranchLeipzig04318Germany
| | - Christof Wöll
- Institute of Functional Interfaces (IFG)Karlsruhe Institute of Technology (KIT)Eggenstein‐Leopoldshafen76344Germany
| | - Zhi‐Gang Gu
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Jian Zhang
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
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Yan Y, Yang J, Du J, Zhang X, Liu YY, Xia C, Wei Z. Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008761. [PMID: 33876467 DOI: 10.1002/adma.202008761] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 02/26/2021] [Indexed: 06/12/2023]
Abstract
Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next-generation nanodevices, such as deep-ultraviolet photodetectors, single-photon emitters, and high-power flexible electronic devices. However, a gap still remains between the theoretical prediction of novel 2D UWBSs and the experimental realization of the corresponding materials. The cross-substitution process is an effective way to construct novel semiconductors with the favorable parent characteristics (e.g., structure) and the better physicochemical properties (e.g., bandgap). Herein, a simple case is offered for rational design and syntheses of 2D UWBS GaPS4 by employing state-of-the-art GeS2 as a similar structural model. Benefiting from the cosubstitution of Ge with lighter Ga and P, the GaPS4 crystals exhibit sharply enlarged optical bandgaps (few-layer: 3.94 eV and monolayer: 4.50 eV) and superior detection performances with high responsivity (4.89 A W-1 ), high detectivity (1.98 × 1012 Jones), and high quantum efficiency (2.39 × 103 %) in the solar-blind ultraviolet region. Moreover, the GaPS4 -based photodetector exhibits polarization-sensitive photoresponse with a linear dichroic ratio of 1.85 at 254 nm, benefitting from its in-plane structural anisotropy. These results provide a pathway for the discovery and fabrication of 2D UWBS anisotropic materials, which become promising candidates for future solar-blind ultraviolet and polarization-sensitive sensors.
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Affiliation(s)
- Yong Yan
- Henan Key Laboratory of Photovoltaic Materials, School of Physics, Henan Normal University, Xinxiang, 453007, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Juan Du
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Xiaomei Zhang
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, Henan Normal University, Xinxiang, 453007, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Congxin Xia
- Henan Key Laboratory of Photovoltaic Materials, School of Physics, Henan Normal University, Xinxiang, 453007, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
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Zhao H, Yan Y, Song X, Ma Z, Tian T, Jiang Y, Li X, Xia C, Li J. Few-layer In 4/3P 2Se 6 nanoflakes for high detectivity photodetectors. NANOSCALE 2021; 13:3757-3766. [PMID: 33555284 DOI: 10.1039/d0nr07987a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal phosphorus trichalcogenides (MPX3) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In4/3P2Se6 nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In4/3P2Se6 crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In4/3P2Se6-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W-1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 1013 Jones (light ON/OFF ratio ≈104) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (∼100 fA). These excellent performances pave the way for the implementation of In4/3P2Se6 nanoflakes as promising candidates for future optoelectronic detection applications.
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Affiliation(s)
- Hongxiao Zhao
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
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Zeng L, Wu D, Jie J, Ren X, Hu X, Lau SP, Chai Y, Tsang YH. Van der Waals Epitaxial Growth of Mosaic-Like 2D Platinum Ditelluride Layers for Room-Temperature Mid-Infrared Photodetection up to 10.6 µm. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004412. [PMID: 33169465 DOI: 10.1002/adma.202004412] [Citation(s) in RCA: 84] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2020] [Revised: 10/07/2020] [Indexed: 05/06/2023]
Abstract
Mid-infrared (MIR) photodetection, covering diverse molecular vibrational regions and atmospheric transmission windows, is vital to civil and military purposes. Versatile use of MIR photodetectors is commonly dominated by HgCdTe alloys, InSb, and quantum superlattices, which are limited by strict operation demands, high-cost, and environmental toxicity. Despite the rapid advances of black phosphorus (BP)-based MIR photodetectors, these are subject to poor stability and large-area integration difficulty. Here, the van der Waals (vdW) epitaxial growth of a wafer-scale 2D platinum ditelluride (PtTe2 ) layer is reported via a simple tellurium-vapor transformation approach. The 2D PtTe2 layer possesses a unique mosaic-like crystal structure consisting of single-crystal domains with highly preferential [001] orientation along the normal direction, reducing the influence of interface defects and ensuring efficient out-of-plane carrier transportation. This characteristic, combined with the wide absorption of PtTe2 and well-designed vertical device architecture, makes the PtTe2 /Si Schottky junction photodetector capable of sensing ultra-broadband light of up to 10.6 µm with a high specific detectivity. Also, the photodetector exhibits an excellent room-temperature infrared-imaging capability. This approach provides a new design concept for high-performance, room-temperature MIR photodetection based on 2D layered materials.
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Affiliation(s)
- Longhui Zeng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Di Wu
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiaoyan Ren
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, P. R. China
| | - Xin Hu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Yuen Hong Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
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Li P, Han A, Zhang C, He X, Zhang J, Zheng D, Cheng L, Li LJ, Miao GX, Zhang XX. Mobility-Fluctuation-Controlled Linear Positive Magnetoresistance in 2D Semiconductor Bi 2O 2Se Nanoplates. ACS NANO 2020; 14:11319-11326. [PMID: 32812734 DOI: 10.1021/acsnano.0c03346] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Linear magnetoresistance is generally observed in polycrystalline zero-gap semimetals and polycrystalline Dirac semimetals with ultrahigh carrier mobility. We report the observation of positive and linear magnetoresistance in a single-crystalline semiconductor Bi2O2Se grown by chemical vapor deposition. Both Se-poor and Se-rich Bi2O2Se single-crystalline nanoplates display a linear magnetoresistance at high fields. The Se-poor Bi2O2Se exhibits a typical 2D conduction feature with a small effective mass of 0.032m0. The average transport Hall mobility, which is lower than 5500 cm2 V-1 s-1, is significantly reduced, compared with the ultrahigh quantum mobility as high as 16260 cm2 V-1 s-1. More interestingly, the pronounced Shubnikov-de Hass oscillations can be clearly observed from the very large and nearly linear magnetoresistance (>500% at 14 T and 2 K) in Se-poor Bi2O2Se. A close analysis of the results reveals that the large and linear magnetoresistance observed can be ascribed to the spatial mobility fluctuation, which is strongly supported by Fermi energy inhomogeneity in the nanoplate samples detected using an electrostatic force microscopy images and multiple frequencies in a Shubnikov-de Hass oscillation. On the contrary, the Se-rich Bi2O2Se exhibits a transport mobility (<300 cm2 V-1 s-1) much smaller than that observed in Se-poor samples and shows a much smaller linear magnetoresistance ratio (less than 150% at 14 T and 2 K). More strikingly, no Shubnikov-de Hass oscillations can be observed. Therefore, the linear magnetoresistance in Se-rich Bi2O2Se is governed by the average mobility rather than the mobility fluctuation.
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Affiliation(s)
- Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Institute for Quantum Computing, Department of Electrical and Computer Engineering, University of Waterloo, Waterloo N2L, Canada
| | - Ali Han
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Junwei Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Dongxing Zheng
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, China
| | - Long Cheng
- Institute for Quantum Computing, Department of Electrical and Computer Engineering, University of Waterloo, Waterloo N2L, Canada
| | - Lain-Jong Li
- Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan
| | - Guo-Xing Miao
- Institute for Quantum Computing, Department of Electrical and Computer Engineering, University of Waterloo, Waterloo N2L, Canada
| | - Xi-Xiang Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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39
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Yin C, Gong C, Chu J, Wang X, Yan C, Qian S, Wang Y, Rao G, Wang H, Liu Y, Wang X, Wang J, Hu W, Li C, Xiong J. Ultrabroadband Photodetectors up to 10.6 µm Based on 2D Fe 3 O 4 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002237. [PMID: 32406177 DOI: 10.1002/adma.202002237] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Accepted: 04/17/2020] [Indexed: 05/06/2023]
Abstract
The ultrabroadband spectrum detection from ultraviolet (UV) to long-wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR-detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high-performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air-stable nonlayered ultrathin Fe3 O4 nanosheets synthesized via a space-confined chemical vapor deposition (CVD) method. Ultrahigh photoresponsivity (R) of 561.2 A W-1 , external quantum efficiency (EQE) of 6.6 × 103 %, and detectivity (D*) of 7.42 × 108 Jones are achieved at the wavelength of 10.6 µm. The multimechanism synergistic effect of photoconductive effect and bolometric effect demonstrates the high sensitivity for light with any light intensities. The outstanding device performance and complementary mixing photoresponse mechanisms open up new potential applications of nonlayered 2D materials for future infrared optoelectronic devices.
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Affiliation(s)
- Chujun Yin
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Junwei Chu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Chaoyi Yan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Shifeng Qian
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Gaofeng Rao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Hongbo Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yuqing Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Chaobo Li
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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