Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

Liquid metal nanoparticles as photo-initiators for preparation of transparent hydrogel with adjustable mechanical properties

To achieve rapid preparation of hydrogels without using conventional chemical initiators, a stable suspension of eutectic gallium indium (EGaIn) liquid metal nanoparticles is explored by probe-sonicating the metal in an aqueous solution. Liquid metal suspension was sonicated to serve as a photo-initiator for acrylamide polymerization and produce hydrogels. The initiation effect comes from the fact that liquid metal suspension after sonication can produce a large number of free radicals when exposed to ultraviolet (UV) radiation, leading to initiation. The changes of liquid metal nanodroplets under UV light irradiation have been systematically investigated. Further, the liquid metal colloidal solutions were used to prepare hydrogels with the same transparency and adjustable mechanical properties as the samples initiated by commercial photo-initiators. This work shows the great application potential of liquid metal in the preparation of hydrogels and provides a new technical idea for the design of multifunctional hydrogels.

Atomic engineering of two-dimensional materials via liquid metals

Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.

Interface of gallium-based liquid metals: oxide skin, wetting, and applications

Gallium-based liquid metals (GaLMs) are promising for a variety of applications-especially as a component material for soft devices-due to their fluidic nature, low toxicity and reactivity, and high electrical and thermal conductivity comparable to solid counterparts. Understanding the interfacial properties and behaviors of GaLMs in different environments is crucial for most applications. When exposed to air or water, GaLMs form a gallium oxide layer with nanoscale thickness. This "oxide nano-skin" passivates the metal surface and allows for the formation of stable microstructures and films despite the high-surface tension of liquid metal. The oxide skin easily adheres to most smooth surfaces. While it enables effective printing and patterning of the GaLMs, it can also make the metals challenging to handle because it adheres to most surfaces. The oxide also affects the interfacial electrical resistance of the metals. Its formation, thickness, and composition can be chemically or electrochemically controlled, altering the physical, chemical, and electrical properties of the metal interface. Without the oxide, GaLMs wet metallic surfaces but do not wet non-metallic substrates such as polymers. The topography of the underlying surface further influences the wetting characteristics of the metals. This review outlines the interfacial attributes of GaLMs in air, water, and other environments and discusses relevant applications based on interfacial engineering. The effect of surface topography on the wetting behaviors of the GaLMs is also discussed. Finally, we suggest important research topics for a better understanding of the GaLMs interface.

Gallium-Based Liquid Metals in Rechargeable Batteries: From Properties to Applications

Gallium-based (Ga-based) liquid metals have attracted considerable interest due to their low melting points, enabling them to feature both liquid properties and metallic properties at room temperature. In light of this, Ga-based liquid metals also possess excellent deformability, high electrical and thermal conductivity, superior metal affinity, and unique self-limited surface oxide, making them popular functional materials in energy storage. This provides a possibility to construct high-performance rechargeable batteries that are deformable, free of dendrite growth, and so on. This review primarily starts with the property of Ga-based liquid metal, and then focuses on the potential applications in rechargeable batteries by exploiting these advantages, aiming to construct the correlation between properties and structures. The glorious applications contain interface protection, self-healing electrode construction, thermal management, and flexible batteries. Finally, the opportunities and obstacles for the applications of liquid metal in batteries are presented.

Liquid-Metal-Based Spin-Coating Exfoliation for Atomically Thin Metal Oxide Synthesis

Two-dimensional (2D) semiconductors possess exceptional electronic, optical, and magnetic properties, making them highly desirable for widespread applications. However, conventional mechanical exfoliation and epitaxial growth methods are insufficient in meeting the demand for atomically thin films covering large areas while maintaining high quality. Herein, leveraging liquid metal oxidation reaction, we propose a motorized spin-coating exfoliation strategy to efficiently produce large-area 2D metal oxide (2DMO) semiconductors with high crystallinity, atomically thin thickness, and flat surfaces on diverse substrates. Moreover, we realized a 2D gallium oxide-based deep ultraviolet solar-blind photodetector featuring a metal-semiconductor-metal structure, showcasing high responsivity (8.24 A W-1) at 254 nm and excellent sensitivity (4.3 × 1012 cm Hz1/2 W-1). This novel liquid-metal-based spin-coating exfoliation strategy offers great potential for synthesizing atomically thin 2D semiconductors, opening new avenues for future functional electronic and optical applications.

Gallium-based liquid metals as reaction media for nanomaterials synthesis

Gallium-based liquid metals (LMs) and their alloys have gained prominence in the realm of flexible and stretchable electronics. Recent advances have expanded the interest to explore the electron-rich core and interface of LMs to synthesize various nanomaterials, where Ga-based LMs serve as versatile reaction media. In this paper, we delve into the latest developments within this burgeoning field. Our discussion begins by elucidating the unique attributes of LMs that render them suitable as reaction media, including their high metal solubility, low standard reduction potential, self-limiting oxidation and ultra-smooth and "layer" surface. We then provide a comprehensive categorized summary of utilizing these features to fabricate a variety of nanomaterials, including pure metallic materials (metal alloys, metal crystals, porous metals, high-entropy alloys and metallic single atoms), metal-inorganic compounds (2D metal oxides, 2D metallic inorganic compounds and 2D graphitic materials), as well as metal-organic composites (metal-organic frameworks). This paper concludes by discussing the current challenges in this field and exploring potential future directions. The versatility and unique properties of Ga-based LMs are poised to play a pivotal role in the future of nanomaterial science, paving the way for more efficient, sustainable, and innovative technological solutions.

Turing Instability of Liquid-Solid Metal Systems

The classical Turing morphogenesis often occurs in nonmetallic solution systems due to the sole competition of reaction and diffusion processes. Here, this work conceives that gallium (Ga) based liquid metals (LMs) possess the ability to alloy, diffuse, and react with a range of solid metals (SMs) and thus should display Turing instability leading to a variety of nonequilibrium spatial concentration patterns. This work discloses a general mechanism for obtaining labyrinths, stripes, and spots-like stationary Turing patterns in the LM-SM reaction-diffusion systems (GaX-Y), taking the gallium indium alloy and silver substrate (GaIn-Ag) system as a proof of concept. It is only when Ga atoms diffuse over Y much faster than X while X reacts with Y preferentially, that Turing instability occurs. In such a metallic system, Ga serves as an inhibitor and X as an activator. The dominant factors in tuning the patterning process include temperature and concentration. Intermetallic compounds contained in the Turing patterns and their competitive reactions have also been further clarified. This LM Turing instability mechanism opens many opportunities for constructing microstructure systems utilizing condensed matter to experimentally explore the general morphogenesis process.

Phase Transition Liquid Metal Enabled Emerging Biomedical Technologies and Applications

Phase change materials that can absorb or release large amounts of heat during phase transition, play a critical role in many important processes, including heat dissipation, thermal energy storage, and solar energy utilization. In general, phase change materials are usually encapsulated in passive modules to provide assurance for energy management. The shape and mechanical changes of these materials are greatly ignored. An emerging class of phase change materials, liquid metals (LMs) have attracted significant interest beyond thermal management, including in transformable robots, flexible electronics, soft actuators, and biomedicine. Interestingly, the melting point of LM is highly tunable around body temperature, allowing it to experience considerable stiffness change when interacting with human organisms during solid-liquid change, which brings about novel phenomena, applied technologies, and therapeutic methods, such as mechanical destruction of tumors, neural electrode implantation technique, and embolization therapy. This review focuses on the technology, regulation, and application of the phase change process along with diverse changes of LM to facilitate emerging biomedical applications based on the influences of mechanical stiffness change and versatile regulation strategies. Typical applications will also be categorized and summarized. Lastly, the advantages and challenges of using the unique and reversible process for biomedicine will be discussed.

Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction

Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~104, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga2O3 as barrier interlayer is achieved by in situ surface oxidation of EGaIn electrodes, allowing for an adjustable barrier height and expected thermionic emission properties. The organic inverters with a high gain of 5130 and a simplified current stabilizer are further demonstrated, paving a way for high-gain and low-power organic electronics.

Liquid Metal Combinatorics toward Materials Discovery

Liquid metals and their derivatives provide several opportunities for fundamental and practical exploration worldwide. However, the increasing number of studies and shortage of desirable materials to fulfill different needs also pose serious challenges. Herein, to address this issue, a generalized theoretical frame that is termed as "Liquid Metal Combinatorics" (LMC) is systematically presented, and summarizes promising candidate technical routes toward new generation material discovery. The major categories of LMC are defined, and eight representative methods for manufacturing advanced materials are outlined. It is illustrated that abundant targeted materials can be efficiently designed and fabricated via LMC through deep physical combinations, chemical reactions, or both among the main bodies of liquid metals, surface chemicals, precipitated ions, and other materials. This represents a large class of powerful, reliable, and modular methods for innovating general materials. The achieved combinatorial materials not only maintained the typical characteristics of liquid metals but also displayed distinct tenability. Furthermore, the fabrication strategies, wide extensibility, and pivotal applications of LMC are classified. Finally, by interpreting the developmental trends in the area, a perspective on the LMC is provided, which warrants its promising future for society.

Liquid metal catalyzed chemical vapor deposition towards morphology engineering of 2D epitaxial heterostructures

The past decades have witnessed significant advancements in the growth of two-dimensional (2D) materials, offering a wide range of potential applications in the fields of electronics, optoelectronics, energy storage, sensors, catalysis, and biomedical treatments. Epitaxial heterostructures based on 2D materials, including vertical heterostructures, lateral structures, and superlattices, have emerged as novel material systems to manipulate the intrinsic properties and unlock new functionalities. Therefore, the development of controllable preparation methods for tailored epitaxial heterostructures serves as a fundamental basis for extensive property investigation and further application exploration. However, this pursuit presents formidable challenges due to the incomplete understanding of growth mechanisms and limited designable strategies. Chemical vapor deposition (CVD) is deemed as a promising and versatile platform for the controlled synthesis of 2D materials, especially with regard to achieving lattice matching, a critical factor in epitaxial growth. Consequently, CVD holds potential to overcome these hurdles. In this Feature Article, we present our recent breakthroughs in the controllable preparation of 2D epitaxial heterostructures using CVD. Our focus revolves around the processes of morphology engineering, interface engineering, size and density engineering, and striking the delicate balance between growth and etching. Using molten metals or alloys as primary catalysts, we have achieved remarkable control over the fabrication of graphene/hexagonal boron nitride (hBN) super-ordered arrays, enabled multistage etching of graphene/hBN heterostructures, and successfully realized the construction of graphene/MXene heterostructures. Furthermore, our research endeavors encompass both bottom-up and top-down fabrication methods, offering a novel perspective on the synthesis of 2D epitaxial heterostructures. The resulting products hold immense potential for enhancing the efficiency of critical reactions such as oxygen reduction, CO2 reduction, and hydrogen evolution reactions. By presenting our methodologies for obtaining 2D epitaxial heterostructures through CVD, we aspire to inspire fellow researchers in this field to devise more feasible and controllable fabrication techniques while also fostering the exploration of diverse heterostructure configurations. Together, these advancements will undoubtedly pave the way for further breakthroughs in atomic manufacturing and novel applications.

Ultrahigh UV Responsivity Quasi-Two-Dimensional BixSn1-xO2 Films Achieved through Surface Reaction

In this study, quasi-two-dimensional BixSn1-xO2 (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 103 s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO2, and Na2SO3 after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Room-Temperature Magnetism in 2D MnGa4 -H Induced by Hydrogen Insertion

2D room-temperature magnetic materials are of great importance in future spintronic devices while only very few are reported. Herein, a plasma-enhanced chemical vapor deposition approach is exploited to construct the 2D room-temperature magnetic MnGa₄ -H single crystal with a thickness down to 2.2 nm. The employment of H₂ plasma makes hydrogen atoms can be easily inserted into the MnGa₄ lattice to modulate the atomic distance and charge state, thereby ferrimagnetism can be achieved without destroying the structural configuration. The as-obtained 2D MnGa₄ -H crystal is high-quality, air-stable, and thermo-stable, demonstrating robust and stable room-temperature magnetism with a high Curie temperature above 620 K. This work enriches the 2D room-temperature magnetic family and opens up the possibility for the development of spintronic devices based on 2D magnetic alloys.

Emerging 2D Metal Oxides: From Synthesis to Device Integration

2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.

Liquid Metal Droplets-Based Elastomers from Electric Toothbrush-Inspired Revolving Microfluidics

Liquid metal (LM)-based elastomers have a demonstrated value in flexible electronics. Attempts in this area include the development of multifunctional LM-based elastomers with controllable morphology, superior mechanical performances, and great stability. Herein, inspired by the working principle of electric toothbrushes, a revolving microfluidic system is presented for the generation of LM droplets and construction of desired elastomers. The system involves revolving modules assembled by a needles array and 3D microfluidic channels. LM droplets can be generated with controllable size in a high-throughput manner due to the revolving motion-derived drag force. It is demonstrated that by employing a poly(dimethylsiloxane) (PDMS) matrix as the collection phase, the generated LM droplets can act as conductive fillers for the construction of flexible electronics directly. The resultant LM droplets-based elastomers exhibit high mechanical strength, stable electrical performance, as well as superior self-healing property benefiting from the dynamic exchangeable urea bond of the polymer matrix. Notably, due to the flexible programmable feature of the LM droplets embedded within the elastomers, various patterned LM droplets-based elastomers can be easily achieved. These results indicate that the proposed microfluidic LM droplets-based elastomers have a great potential for promoting the development of flexible electronics.

Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOTs), excellent gate control, and low leakage currents. Here, large-area liquid-metal-printed ultrathin Ga₂O₃ dielectrics for 2D electronics and optoelectronics are reported. The atomically smooth Ga₂O₃/WS₂ interfaces enabled by the conformal nature of liquid metal printing are directly visualized. Atomic layer deposition compatibility with high-k Ga₂O₃/HfO₂ top-gate dielectric stacks on a chemical-vapor-deposition-grown monolayer WS₂ is demonstrated, achieving EOTs of ∼1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultrascaled low-power logic circuits. These results show that liquid-metal-printed oxides can bridge a crucial gap in dielectric integration of 2D materials for next-generation nanoelectronics.

Controlled Synthesis of Sub-Millimeter Nonlayered WO2 Nanoplates via a WSe2 -Assisted Method

2D metal oxides (2DMOs) have stimulated tremendous attention due to their distinct electronic structures and abundant surface chemistry. However, it remains a standing challenge for the synthesis of 2DMOs because of their intrinsic 3D lattice structure and ultrahigh synthesis temperature. Here, a reliable WSe₂ -assisted chemical vapor deposition (CVD) strategy to grow nonlayered WO₂ nanoplates with tunable thickness and lateral dimension is reported. Optical microscopy and scanning electron microscopy studies demonstrate that the WO₂ nanoplates exhibit a well-faceted rhombic geometry with a lateral dimension up to the sub-millimeter level (≈135 µm), which is the largest size of 2DMO single crystals obtained by CVD to date. Scanning transmission electron microscopy studies reveal that the nanoplates are high-quality single crystals. Electrical measurements show the nanoplates exhibit metallic behavior with strong anisotropic resistance, outstanding conductivity of 1.1 × 10⁶  S m^-1 , and breakdown current density of 7.1 × 10⁷  A cm^-2 . More interestingly, low-temperature magnetotransport studies demonstrate that the nanoplates show a quantum-interference-induced weak-localization effect. The developed WSe₂ -assisted strategy for the growth of WO₂ nanoplates can enrich the library of 2DMO materials and provide a material platform for other property explorations based on 2D WO₂ .

Liquid Metal as Bioinspired and Unusual Modulator in Bioorthogonal Catalysis for Tumor Inhibition Therapy

Bioorthogonal catalysis mediated by Pd-based transition metal catalysts has sparked increasing interest in combating diseases. However, the catalytic and therapeutic efficiency of current Pd⁰ catalysts is unsatisfactory. Herein, inspired by the concept that ligands around metal sites could enable enzymes to catalyze astonishing reactions by changing their electronic environment, a LM-Pd catalyst with liquid metal (LM) as an unusual modulator has been designed to realize efficient bioorthogonal catalysis for tumor inhibition. The LM matrix can serve as a "ligand" to afford an electron-rich environment to stabilize the active Pd⁰ and promote nucleophilic turnover of the π-allylpalladium species to accelerate the uncaging process. Besides, the photothermal properties of LM can lead to the enhanced removal of tumor cells by photo-enhanced catalysis and photothermal effect. We believe that our work will broaden the application of LM and motivate the design of bioinspired bioorthogonal catalysts.

Liesegang Phenomenon of Liquid Metals on Au Film

Room temperature liquid metals (LM) such as gallium (Ga) own the potential to react with specific materials which would incubate new application categories. Here, diverse self-organized ring patterns due to nonequilibrium reaction-diffusion and spreading-limitation of Ga-based LM clusters on gold (Au) film are reported, among which diffusion is the controlling step and the self-limiting oxide layer plays the role of kinetic barrier. Such phenomena, classically known as the Liesegang rings, mainly occur in electrolyte media. Unlike existing systems, the present periodic crystallization mechanism enables highly symmetric spatiotemporal periodic Liesegang rings on a smaller scale under ambient conditions. Typically, the Ga-Au and eutectic gallium-indium alloy (EGaIn)-Au reaction-diffusion-spreading systems are constructed, obtaining the revert type and hybrid type concentric Liesegang patterns, respectively. The competitive patterning behavior of the intermediate phase products AuGa₂ and AuIn₂ in hybrid Liesegang patterns is further analyzed by altering the initial Ga/In mass ratio, first-principles calculations, and molecular dynamic simulations. When the mass ratio of In in GaIn alloy exceeds 15%, it will preferentially react with Au. The discovery of LM Liesegang phenomenon is expected to be a flashpoint for self-organized reaction-diffusion systems and offers promising rules for diverse areas such as materials synthesis and the jewelry design industry.

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.

Smart Eutectic Gallium-Indium: From Properties to Applications

Eutectic gallium-indium (EGaIn), a liquid metal with a melting point close to or below room temperature, has attracted extensive attention in recent years due to its excellent properties such as fluidity, high conductivity, thermal conductivity, stretchability, self-healing capability, biocompatibility, and recyclability. These features of EGaIn can be adjusted by changing the experimental condition, and various composite materials with extended properties can be further obtained by mixing EGaIn with other materials. In this review, not only the are unique properties of EGaIn introduced, but also the working principles for the EGaIn-based devices are illustrated and the developments of EGaIn-related techniques are summarized. The applications of EGaIn in various fields, such as flexible electronics (sensors, antennas, electronic circuits), molecular electronics (molecular memory, opto-electronic switches, or reconfigurable junctions), energy catalysis (heat management, motors, generators, batteries), biomedical science (drug delivery, tumor therapy, bioimaging and neural interfaces) are reviewed. Finally, a critical discussion of the main challenges for the development of EGaIn-based techniques are discussed, and the potential applications in new fields are prospected.

Facet engineering of ultrathin two-dimensional materials

Ultrathin two-dimensional (2D) materials exhibit broad application prospects in many fields due to the enhanced specific surface area to volume ratio and quantum confinement effect. Because of the atomic thickness and various orientations, ultrathin 2D materials exposing specific facets have drawn great attention for various applications in catalysis, batteries, optoelectronics, magnetism, epitaxial template for material growth, etc. Though maintaining the atomic thickness of 2D materials while controlling crystal facets is an enormous challenge, breakthroughs are being made. This review provides a comprehensive overview of the recent advances in the facet engineering of 2D materials, ranging from a basic understanding of facets and the corresponding approaches and the significance of facet engineering. We also propose current challenges and forecast future development directions including the establishment of a facet database, the fabrication of new 2D materials, the design of specific substrates, and the introduction of theoretical calculations and in situ characterization techniques. This review can guide researchers to design ultrathin 2D materials with unique and distinct facets and provide an insight into the applications of energy, magnetism, optics, biomedicine, and other fields.

Reliable Memristor Based on Ultrathin Native Silicon Oxide

Memristors based on two-dimensional (2D) materials can exhibit great scalability and ultralow power consumption, yet the structural and thickness inhomogeneity of ultrathin electrolytes lowers the production yield and reliability of devices. Here, we report that the self-limiting amorphous SiO_x (∼2.7 nm) provides a perfect atomically thin electrolyte with high uniformity, featuring a record high production yield. With the guidance of physical modeling, we reveal that the atomic thickness of SiO_x enables anomalous resistive switching with a transition to an analog quasi-reset mode, where the filament stability can be further enhanced using Ag-Au nanocomposite electrodes. Such a picojoule memristor shows record low switching variabilities (C2C and D2D variation down to 1.1 and 2.6%, respectively), good retention at a few microsiemens, and high conductance-updating linearity, constituting key metrics for analog neural networks. In addition, the stable high-resistance state is found to be an excellent source for true random numbers of Gaussian distribution. This work opens up opportunities in mass production of Si-compatible memristors for ultradense neuromorphic and security hardware.

Hot-Pressed Two-Dimensional Amorphous Metals and Their Electronic Properties

As an emerging research field, two-dimensional (2D) metals have been the subject of increasing research efforts in recent years due to their potential applications. However, unlike typical 2D layered materials, such as graphene, which can be exfoliated from their bulk parent compounds, it is hardly possible to produce 2D metals through exfoliation techniques due to the absence of Van der Waals gaps. Indeed, the lack of effective material preparation methods severely limits the development of this research field. Here, we report a PDMS-assisted hot-pressing method in glovebox to obtain ultraflat nanometer-thick 2D metals/metal oxide amorphous films of various low-melting-point metals and alloys, e.g., gallium (Ga), indium (In), tin (Sn), and Ga0.87Ag0.13 alloy. The valence states extracted from X-ray photoelectron spectroscopy (XPS) indicate that the ratios of oxidation to metal in our 2D films vary among metals. The temperature-dependent electronic measurements show that the transport behavior of 2D metal/metal oxide films conform with the 2D Mott’s variable range hopping (VRH) model. Our experiments provide a feasible and effective approach to obtain various 2D metals.

Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP

As an important metal phosphides material, 2D tin phosphides (SnP_x 0 <  x ≤ 3) have been theoretically predicted to have intriguing physicochemical properties and potential applications in electronics, optoelectronics, and energy fields. However, the synthesis of high-quality 2D SnP single crystal has not been reported due to the lack of efficiency and reliable growth method. Here, a facile atmospheric pressure chemical vapor deposition (APCVD) method is developed to realize the growth of high-quality 2D SnP nanosheets, by employing tin (Sn) foil as both liquid metal substrates and reaction precursor. Temperature-dependent and angle-resolved polarization Raman spectra observed Raman peaks located at 142.6, 303.3, and 444.2 cm^-1 are concluded to belong to A_1g mode, which are consistent with the theoretical calculation results. Moreover, the field-effect transistor (FET) devices based on SnP nanosheets show a typical n-type characteristic with an on/off ratio of 10³ at 200 K. SnP nanosheets also demonstrate excellent photoresponse performance under the illumination of 473, 532, and 639 nm lasers, which can be tuned by V_gs , V_ds , and light power density. It is believed that these findings can provide the first-hand experimental information for the future study of 2D SnP nanosheets.

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.

Liquid metals: an ideal platform for the synthesis of two-dimensional materials

The surfaces of liquid metals can serve as a platform to synthesise two-dimensional materials. By exploiting the self-limiting Cabrera-Mott oxidation reaction that takes place at the surface of liquid metals exposed to ambient air, an ultrathin oxide layer can be synthesised and isolated. Several synthesis approaches based on this phenomenon have been developed in recent years, resulting in a diverse family of functional 2D materials that covers a significant fraction of the periodic table. These straightforward and inherently scalable techniques may enable the fabrication of novel devices and thus harbour significant application potential. This review provides a brief introduction to liquid metals and their alloys, followed by detailed guidance on each developed synthesis technique, post-growth processing methods, integration processes, as well as potential applications of the developed materials.

Recent advances in the fabrication of 2D metal oxides

Atomically thin two-dimensional (2D) metal oxides exhibit unique optical, electrical, magnetic, and chemical properties, rendering them a bright application prospect in high-performance smart devices. Given the large variety of both layered and non-layered 2D metal oxides, the controllable synthesis is the critical prerequisite for enabling the exploration of their great potentials. In this review, recent progress in the synthesis of 2D metal oxides is summarized and categorized. Particularly, a brief overview of categories and crystal structures of 2D metal oxides is firstly introduced, followed by a critical discussion of various synthesis methods regarding the growth mechanisms, advantages, and limitations. Finally, the existing challenges are presented to provide possible future research directions regarding the synthesis of 2D metal oxides. This work can provide useful guidance on developing innovative approaches for producing both 2D layered and non-layered nanostructures and assist with the acceleration of the research of 2D metal oxides.

Liquid-Metal-Assisted Deposition and Patterning of Molybdenum Dioxide at Low Temperature

Molybdenum dioxide (MoO2), considering its near-metallic conductivity and surface plasmonic properties, is a great material for electronics, energy storage devices and biosensing. Yet to this day, room-temperature synthesis of large area MoO2, which allows deposition on arbitrary substrates, has remained a challenge. Due to their reactive interfaces and specific solubility conditions, gallium-based liquid metal alloys offer unique opportunities for synthesizing materials that can meet these challenges. Herein, a substrate-independent liquid metal-based method for the room temperature deposition and patterning of MoO2 is presented. By introducing a molybdate precursor to the surrounding of a eutectic gallium-indium alloy droplet, a uniform layer of hydrated molybdenum oxide (H2MoO3) is formed at the interface. This layer is then exfoliated and transferred onto a desired substrate. Utilizing the transferred H2MoO3 layer, a laser-writing technique is developed which selectively transforms this H2MoO3 into crystalline MoO2 and produces electrically conductive MoO2 patterns at room temperature. The electrical conductivity and plasmonic properties of the MoO2 are analyzed and demonstrated. The presented metal oxide room-temperature deposition and patterning method can find many applications in optoelectronics, sensing, and energy industries.

Polydopamine Shell as a Ga3+ Reservoir for Triggering Gallium-Indium Phase Separation in Eutectic Gallium-Indium Nanoalloys

Low melting point eutectic systems, such as the eutectic gallium-indium (EGaIn) alloy, offer great potential in the domain of nanometallurgy; however, many of their interfacial behaviors remain to be explored. Here, a compositional change of EGaIn nanoalloys triggered by polydopamine (PDA) coating is demonstrated. Incorporating PDA on the surface of EGaIn nanoalloys renders core-shell nanostructures that accompany Ga-In phase separation within the nanoalloys. The PDA shell keeps depleting the Ga³⁺ from the EGaIn nanoalloys when the synthesis proceeds, leading to a Ga³⁺-coordinated PDA coating and a smaller nanoalloy. During this process, the eutectic nanoalloys turn into non-eutectic systems that ultimately result in the solidification of In when Ga is fully depleted. The reaction of Ga³⁺-coordinated PDA-coated nanoalloys with nitrogen dioxide gas is presented as an example for demonstrating the functionality of such hybrid composites. The concept of phase-separating systems, with polymeric reservoirs, may lead to tailored materials and can be explored on a variety of post-transition metals.

Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals

The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the bulk are employed for harvesting Bi₂ O₃ -doped SnO nanosheets. In this model, Sn shows a much stronger tendency than Bi to occupy surface sites of the Bi-Sn alloys, even at the very high concentrations of Bi in the bulk. This provides the opportunity for creating SnO 2D sheets with tightly controlled Bi₂ O₃ dopants. By way of example, it is demonstrated how such nanosheets could be made selective to both reducing and oxidizing environmental gases. The process demonstrated here offers significant opportunities for future synthesis and fabrication processes in the electronics industries.

Controlled growth of 2D ultrathin Ga2O3 crystals on liquid metal

2D metal oxides (2DMOs) have drawn intensive interest in the past few years owing to their rich surface chemistry and unique electronic structures. Striving for large-scale and high-quality novel 2DMOs is of great significance for developing future nano-enabled technologies. In this work, we demonstrate for the first time controllable growth of highly crystalline 2D ultrathin Ga₂O₃ single crystals on liquid Ga by the chemical vapor deposition approach. With the introduction of oxygen into the growth process, large-area hexagonal α-Ga₂O₃ crystals with a uniform size distribution have been produced. At high temperature, fast diffusion of oxygen atoms onto the liquid surface facilitates reaction with Ga and thus leads to in situ formation of 2D ultrathin crystals. By precisely controlling the amount of oxygen, the vertical growth of the Ga₂O₃ single crystal has been realized. Furthermore, phase engineering can be achieved and thus 2D β-Ga₂O₃ crystals were also prepared by precisely tuning the growth temperature. The controlled growth of 2D Ga₂O₃ crystals offers an applicable avenue for fabrication of other 2D metal oxides and can further open up possibilities for future electronics.

Data-driven machine learning model for the prediction of oxygen vacancy formation energy of metal oxide materials

Metal oxides are widely used in the fields of chemistry, physics and materials science. Oxygen vacancy formation energy is a key parameter to describe the chemical, mechanical, and thermodynamic properties of metal oxides. How to acquire quickly and accurately oxygen vacancy formation energy remains a challenge for both experimental and theoretical researchers. Herein, we propose a machine learning model for the prediction of oxygen vacancy formation energy via data-driven analysis and the definition of simple descriptors. Starting with the database containing oxygen vacancy formation energies for 1750 metal oxides with enough structural diversity, new descriptors that effectively avoid the defects of molecular fingerprints, molecular graphic descriptors and site descriptors are defined. The descriptors have obvious physical meanings and wide practicability. Multiple linear regression analysis is then used to screen important features for machine learning model development, and two strongly associated features are obtained. The selected descriptors are used as input for the training of 21 machine learning models to select and develop the most accurate machine learning model. Finally, it is shown that the least squares support vector regression method exhibits the best performance for accurate prediction of the targeted oxygen vacancy formation energy through systematic error analysis, and the prediction accuracy is also verified by the external dataset. Our work establishes a novel and simple computational approach for accurate prediction of the oxygen vacancy formation energy of metal oxides and highlights the availability of data-driven analysis for metal oxide material research.