Water-Surface Drag Coating: A New Route Toward High-Quality Conjugated Small-Molecule Thin Films with Enhanced Charge Transport Properties

Breaking Fundamental Limitation of Flow-Induced Anisotropic Growth for Large-Scale and Fast Printing of Organic Single-Crystal Films

Advanced organic electronic technologies have put forward a pressing demand for cost-effective and high-throughput fabrication of organic single-crystal films (OSCFs). However, solution-printed OSCFs are typically plagued by the existence of abundant structural defects, which pose a formidable challenge to achieving large-scale and high-performance organic electronics. Here, it is elucidated that these structural defects are mainly originated from printing flow-induced anisotropic growth, an important factor that is overlooked for too long. In light of this, a surfactant-additive printing method is proposed to effectively overcome the anisotropic growth, enabling the deposition of uniform OSCFs over the wafer scale at a high speed of 1.2 mm s-1 at room temperature. The resulting OSCF exhibits appealing performance with a high average mobility up to 10.7 cm2 V-1 s-1, which is one of the highest values for flexible organic field-effect transistor arrays. Moreover, large-scale OSCF-based flexible logic circuits, which can be bent without degradation to a radius as small as 4.0 mm and over 1000 cycles are realized. The work provides profound insights into breaking the limitation of flow-induced anisotropic growth and opens new avenues for printing large-scale organic single-crystal electronics.

Achieving Zero-Temperature Coefficient Point Behavior by Defect Passivation for Temperature-Immune Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature-immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature-sensitive. The zero-temperature coefficient (ZTC) point behavior can be used to achieve a temperature-immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, the Fermi pinning in OSCs is eliminated using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage (VT) is negatively correlated with temperature. ZTC point behaviors in OFETs are achieved by compensation between VT and mobility at different temperatures to improve its temperature immunity. A temperature-immune output current can be realized in a variable-temperature bias voltage test over 50000 s by biasing the device at the ZTC point. This study provides an effective solution for temperature-immune OFETs and inspiration for their practical application.

Hysteresis-Free and Bias-Stable Organic Transistors Fabricated by Dip-Coating with a Vertical-Phase-Separation Structure

The morphology of organic films plays a pivotal role in determining the performance of transistor devices. While the dip-coating technique is capable of producing highly oriented organic films, it often encounters challenges such as limited coverage and the presence of defects in gaps between strips, adversely affecting device performance. In this study, we address these challenges by increasing solution viscosity through the incorporation of a substantial proportion of dielectric polymers, thereby enhancing the participation of additional molecules during the film formation process when pulled up. This method produces continuous and oriented organic films with a notable absence of gaps, significantly improving the carrier mobility of transistor devices by more than twofold. Importantly, the fabricated devices exhibit remarkable reliability, showing no hysteresis even after 200 cycles of measurement. Furthermore, the current and threshold voltages of the devices demonstrate exceptional stability, maintaining steady after 10,000 s of bias measurement. This approach provides a solution for the cost-effective and large-scale production of organic transistors, contributing significantly to the advancement of organic electronics.

The Development of Carbon/Silicon Heterojunction Solar Cells through Interface Passivation

Passivating contactsin heterojunction (HJ) solar cells have shown great potential in reducing recombination losses, and thereby achieving high power conversion efficiencies in photovoltaic devices. In this direction, carbon nanomaterials have emerged as a promising option for carbon/silicon (C/Si) HJsolar cells due to their tunable band structure, wide spectral absorption, high carrier mobility, and properties such as multiple exciton generation. However, the current limitations in efficiency and active area have hindered the industrialization of these devices. In this review, they examine the progress made in overcoming these constraints and discuss the prospect of achieving high power conversion efficiency (PCE) C/Si HJ devices. A C/Si HJ solar cell is also designed by introducing an innovative interface passivation strategy to further boost the PCE and accelerate the large area preparationof C/Si devices. The physical principle, device design scheme, and performanceoptimization approaches of this passivated C/Si HJ cells are discussed. Additionally, they outline potential future pathways and directions for C/Si HJ devices, including a reduction in their cost to manufacture and their incorporation intotandem solar cells. As such, this review aims to facilitate a deeperunderstanding of C/Si HJ solar cells and provide guidance for their further development.

A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy

A floating-gate organic field-effect transistor (FG-OFET) memory device is becoming a promising candidate for emerging non-volatile memory applications due to the advantages of its sophisticated data-storage mechanism and reliable long-term data retention capacity. However, a conventional FG-OFET memory device suffers from complex fabrication technologies and poor mechanical flexibility, which limits its practical applications. Here, we propose a facile one-step liquid-surface drag coating strategy to fabricate a layered stack of 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (Dif-TES-ADT) crystals and high-quality insulating polymer polystyrene (PS). The liquid surface enhances the spreading area of an organic solution and facilitates the unidirectional growth of organic crystals. In the bilayer-structured blend, the bottom PS polymer and the top Dif-TES-ADT semiconductor serve as a tunneling dielectric and an active memory layer of an FG-OFET memory device, respectively. Consequently, a flexible FG-OFET memory device with a large memory window of 41.4 V, a long retention time of 5000 s, and a high current ON/OFF ratio of 105 could be achieved, showing the best performance ever reported for organic thin film-based FG-OFET memory devices. In addition, multi-level data storage (3 bits per cell) can be achieved by tuning the gate voltage magnitude. Our work not only provides a general strategy for the growth of high-quality organic crystals, but also paves the way towards high-performance flexible memory devices.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top-down approaches to their fabrication, such as exfoliation of bulk crystals by "scotch-tape," are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom-up technique based on epitaxy is used to demonstrate high-quality, wafer-scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well-defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV-C spectral range, offering a scalable route to deep-UV optoelectronics.

Volume-Confined Fabrication of Large-Scale Single-Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials

With outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next-generation wearable electronics and flexible devices in the film form. However, it remains a challenge to grow high-quality thin films of molecular ferroelectrics. To address the above issue, a volume-confined method is utilized to achieve ultrasmooth single-crystal molecular ferroelectric thin films at the sub-centimeter scale, with the thickness controlled in the range of 100-1000 nm. More importantly, the preparation method is applicable to most molecular ferroelectrics and has no dependency on substrates, showing excellent reproducibility and universality. To demonstrate the application potential, two-dimensional (2D) transitional metal dichalcogenide semiconductor/molecular ferroelectric heterostructures are prepared and investigated by optical spectroscopic method, proving the possibility of integrating molecular ferroelectrics with 2D layered materials. These results may unlock the potential for preparing and developing high-performance devices based on molecular ferroelectric thin films.

Wafer-Scale Epitaxial Growth of Two-dimensional Organic Semiconductor Single Crystals toward High-Performance Transistors

The success of state-of-the-art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single-crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice-matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single-crystal electronics. Here, an anchored crystal-seed epitaxial growth method for wafer-scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer-scale few-layer bis(triethylsilythynyl)-anthradithphene (Dif-TES-ADT) single crystal is formed, yielding a breakthrough for organic field-effect transistors with a high reliable mobility up to 8.6 cm2 V-1 s-1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single-crystal wafers for high-performance organic electronics.

Humidity-Controlled Molecular Assembly and Photoisomerization Behavior with a Bubble-Assisted Patterning Approach

Precise control of molecular assembly is of great significance in the application of functional molecules. This work has systematically investigated the humidity effect in bubble-assisted molecular assembly. This work finds humidity is critical in the evolution of the soft confined space, leading to the formation of microscale liquid confined space under high humidity, and nanoscale liquid confined space under low humidity. It is also revealed that the differences in surface wettability and adhesion play the key role. Consequently, a flat pattern with thermodynamically favorable ordered structure and a sharp pattern with dynamically favorable disordered structure are achieved, which show different solid-state photoisomerization behaviors and photoresponsiveness. Interestingly, conductivity of sharp pattern with disordered structure is higher than that of flat pattern with layered ordered structure due to electronic transport mechanism of different spatial dimensions. This work opens a new way for manipulating the molecular self-assembly to control the morphology and function of molecular patterns.

Nanocrystal Array Engineering and Optoelectronic Applications of Organic Small-Molecule Semiconductors

Organic small-molecule semiconductor materials have attracted extensive attention because of their excellent properties. Due to the randomness of crystal orientation and growth location, however, the preparation of continuous and highly ordered organic small-molecule semiconductor nanocrystal arrays still face more challenges. Compared to organic macromolecules, organic small molecules exhibit better crystallinity, and therefore, they exhibit better semiconductor performance. The formation of organic small-molecule crystals relies heavily on weak interactions such as hydrogen bonds, van der Waals forces, and π-π interactions, which are very sensitive to external stimuli such as mechanical forces, high temperatures, and organic solvents. Therefore, nanocrystal array engineering is more flexible than that of the inorganic materials. In addition, nanocrystal array engineering is a key step towards practical application. To resolve this problem, many conventional nanocrystal array preparation methods have been developed, such as spin coating, etc. In this review, the typical and recent progress of nanocrystal array engineering are summarized. It is the typical and recent innovations that the array of nanocrystal array engineering can be patterned on the substrate through top-down, bottom-up, self-assembly, and crystallization methods, and it can also be patterned by constructing a series of microscopic structures. Finally, various multifunctional and emerging applications based on organic small-molecule semiconductor nanocrystal arrays are introduced.

High-performance flexible organic field effect transistors with print-based nanowires

Polymer nanowire (NW) organic field-effect transistors (OFETs) integrated on highly aligned large-area flexible substrates are candidate structures for the development of high-performance flexible electronics. This work presents a universal technique, coaxial focused electrohydrodynamic jet (CFEJ) printing technology, to fabricate highly aligned 90-nm-diameter polymer arrays. This method allows for the preparation of uniformly shaped and precisely positioned nanowires directly on flexible substrates without transfer, thus ensuring their electrical properties. Using indacenodithiophene-co-benzothiadiazole (IDT-BT) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8-BT) as example materials, 5 cm2 arrays were prepared with only minute size variations, which is extremely difficult to do using previously reported methods. According to 2D-GIXRD analysis, the molecules inside the nanowires mainly adopted face-on π-stacking crystallite arrangements. This is quite different from the mixed arrangement of thin films. Nanowire-based OFETs exhibited a high average hole mobility of 1.1 cm2 V-1 s-1 and good device uniformity, indicating the applicability of CFEJ printing as a potential batch manufacturing and integration process for high-performance, scalable polymer nanowire-based OFET circuits. This technique can be used to fabricate various polymer arrays, enabling the use of organic polymer semiconductors in large-area, high-performance electronic devices and providing a new path for the fabrication of flexible displays and wearable electronics in the future.

Molecular layer modulation of two-dimensional organic ferroelectric transistors

Ferroelectric transistors hold great potential in low consumption devices. Due to the high film quality and clean system, two dimensional organic semiconductors are widely employed to fabricate high performance organic electronic devices and explore the modulation mechanism of the molecular packing on device performance. Here, we combine the ferroelectric hafnium oxide HfZrO_xand two-dimensional molecular crystal 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2b]thiophene (C₁₀-DNTT) with controllable layers to study the molecular layer modulation of ferroelectric organic thin-film transistors (OTFTs). The contact resistance, driving current and transconductance are directly affected by the additional access resistance across the upper molecular layers at the source/drain contact region. Simultaneously, the capacitance of Schottky junction related to the molecular layer thickness could effectively adjust the gate potential acting on the organic channel, further controlling the devices' subthreshold swing and transconductance efficiency. This work would promote the development of low voltage and high performance OTFTs.

Optimized coaxial focused electrohydrodynamic jet printing of highly ordered semiconductor sub-microwire arrays for high-performance organic field-effect transistors

Patterning of semiconductor polymers is pertinent to preparing and applying organic field-effect transistors (OFETs). In this study, coaxial focused electrohydrodynamic jet printing (high resolution, high speed, and convenient) was used to pattern polymer semiconductors. The influence of the key printing parameters on the width of polymer sub-microwires was evaluated. The width decreased with increasing applied voltage, printing speed, and concentration of the polymer ink. However, the width increased gradually with increasing polymer ink flow rate. A regression analysis model of the relationship between the printing parameters and width was established. Based on a regression analysis/genetic algorithm, the optimal printing parameters were obtained and the correctness of the printing parameters was verified. The optimized printing parameters stabilized the width of the arrays to ca. 110 nm and imparted a smooth morphology. Additionally, the corresponding OFETs exhibited a high mobility of 2 cm² V^-1 s^-1, which is 5× higher than that of thin-film-based OFETs. One can conveniently obtain high-performance OFETs from ordered sub-microwire arrays fabricated by CFEJ printing.

Large area polymer semiconductor sub-microwire arrays by coaxial focused electrohydrodynamic jet printing for high-performance OFETs

Large area and highly aligned polymer semiconductor sub-microwires were fabricated using the coaxial focused electrohydrodynamic jet printing technology. As indicated by the results, the sub-microwire arrays have smooth morphology, well reproducibility and controllable with a width of ~110 nm. Analysis shows that the molecular chains inside the sub-microwires mainly exhibited edge-on arrangement and the π-stacking direction (010) of the majority of crystals is parallel to the long axis of the sub-microwires. Sub-microwires based organic field effect transistors showed high mobility with an average of 1.9 cm² V⁻¹ s⁻¹, approximately 5 times higher than that of thin film based organic field effect transistors. In addition, the number of sub-microwires can be conveniently controlled by the printing technique, which can subsequently concisely control the performance of organic field effect transistors. This work demonstrates that sub-microwires fabricated by the coaxial focused electrohydrodynamic jet printing technology create an alternative path for the applications of high-performance organic flexible device.

Here, the authors fabricate large area and highly aligned polymer semiconductor sub-microwires arrays via coaxial focused electrohydrodynamic jet printing technology, achieving high on/off ratio and average mobility that is 5x higher than that of thin film based organic field effect transistors.

Recent Advances in Realizing Highly Aligned Organic Semiconductors by Solution-Processing Approaches

Solution-processing approaches are widely used for controlling the aggregation structure of organic semiconductors because they are fast, efficient, and have strong practicability. Effective regulation of the aggregation structure of molecules to achieve highly ordered molecular stacking is key to realizing effective carrier transport and high-performance devices. Numerous studies have achieved highly aligned organic semiconductors using different solution-processing approaches. This article provides a detailed review of the prevalent solution-processing technologies and emerging methods developed over the past few years for the alignment of organic semiconducting materials. These technologies and methods are classified according to the processing principle. This review focuses on the principles of different experimental techniques, improvements upon the conventional methods, and state-of-the-art performance of resulting devices. In addition, a brief discussion of the characteristics and development prospects of various methods is presented.

Challenging Bendable Organic Single Crystal and Transistor Arrays with High Mobility and Durability toward Flexible Electronics

Bendable organic single crystals are promising candidates for flexible electronics owing to their superior charge-transport properties. However, large-area high-quality organic single crystals are rarely available on the polymer substrates generally used in flexible electronics. Here, a surface-assisted assembly strategy based on a polymer modification, poly(amic acid) (PAA), is developed to grow large-area organic singe crystals on polymer substrates using a simple drop-casting method. The unique surface properties of PAA that enable molecular solution superwetting and promote molecular ordered assembly produce an extraordinary self-driven "meniscus-guided coating" behavior, enabling the fabrication of millimeter-sized, highly aligned organic single crystals for a variety of organic semiconductors. Organic field-effect transistors based on a mode molecule of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene demonstrate the highest (average) mobility of 18.6 cm² V^-1 s^-1 (15.9 cm² V^-1 s^-1 ), attractively low operating voltage of -3 V, and high flexible durability. The results shed light on the large-area fabrication of organic single crystals on polymer dielectrics toward high-performance and integrated plastic electronics.

Morphological Regulation of Printed Low-Temperature Conductive Ink

The unbalanced evaporation of solvents in low-temperature sintered inks for printed electronics leads to a series of problems in the actual printing process, including printed pattern distortion, surface cracking, and the coffee ring effect, which has become a serious obstacle to this technique. Here, we present a comprehensive investigation of the influence of the solvent composition, environmental, and sintering conditions on the complicated pattern formation process of reactive silver inks. The results first showed that only inks with a certain wettability of solvents could form well-defined patterns. Then, the solvent composition and ambient humidity can be adjusted to balance the nonequilibrium evaporative flow within the liquid and thus to obtain a flat liquid film. Combined with the rapid UV sintering process, the particle size, porosity, and roughness could be controlled to produce dense and homogeneous silver films. Finally, we successfully printed silver electrodes with a smooth and dense surface (R_qs ∼ 21 nm in 0.8 × 0.8 mm² area and less than 1% porosity) under an optimized relative humidity (RH) of 50-60% at room temperature with the solvent composition of IPA (isopropanol)/2,3-BD (2,3-butanediol) = 8:2. In addition, we also demonstrated high-performance Pr-IZO (praseodymium-doped indium-zinc oxide) thin film transistors (TFTs) with a mobility (μ_sat) of 2.14 cm²/V/s and I_on/I_off ratio of over 10⁷ using source-drain electrodes printed under optimized conditions.

Emerging Synthesis Strategies of 2D MOFs for Electrical Devices and Integrated Circuits

The development of advanced electronic devices is boosting many aspects of modern technology and industry. The ever-increasing demand for advanced electrical devices and integrated circuits calls for the design of novel materials, with superior properties for the improvement of working performance. In this review, a detailed overview of the synthesis strategies of 2D metal organic frameworks (MOFs) acquiring growing attention is presented, as a basis for expansion of novel key materials in electrical devices and integrated circuits. A framework of controllable synthesis routes to be implanted in the synthesis strategies of 2D materials and MOFs is described. In short, the synthesis methods of 2D MOFs are summarized and discussed in depth followed by the illustrations of promising applications relating to various electrical devices and integrated circuits. It is concluded by outlining how 2D MOFs can be synthesized in a simpler, highly efficient, low-cost, and more environmentally friendly way which can open up their applicable opportunities as key materials in advanced electrical devices and integrated circuits, enabling their use in broad aspects of the society.

High-Performance Organic Laser Semiconductor Enabling Efficient Light-Emitting Transistors and Low-Threshold Microcavity Lasers

An organic light-emitting transistor (OLET) is a candidate device architecture for developing electrically pumped organic solid-state lasers, but it remains a critical challenge because of the lack of organic semiconductors that simultaneously possess a high solid-state emission efficiency (Φ_s), a high and balanced ambipolar mobility (μ_h,e), and a large stimulated emission cross-section. Here, we designed a molecule of 4,4'-bis(2-dibenzothiophenyl-vinyl)-biphenyl (DBTVB) and prepared its ultrathin single-crystal microplates with herringbone packing arrangements, which achieve balanced mobilities of μ_h = 3.55 ± 0.5 and μ_e = 2.37 ± 0.5 cm² V^-1 s^-1, a high Φ_s of 85 ± 3%, and striking low-threshold laser characteristics. Theoretical and experimental investigations reveal that a strong electronic coupling and a small reorganization energy ensure efficient charge transport; meanwhile, the exciton-vibration effect and negligible π-π orbital overlap give rise to highly emissive H-aggregates and facilitate laser emission. Furthermore, OLET-based DBTVB crystals offer an internal quantum efficiency approaching 100% and a record-high electroluminescence external quantum efficiency of 4.03%.

Microstructural Control of Soluble Acene Crystals for Field-Effect Transistor Gas Sensors

Microstructural control during the solution processing of small-molecule semiconductors (namely, soluble acene) is important for enhancing the performance of field-effect transistors (FET) and sensors. This focused review introduces strategies to enhance the gas-sensing properties (sensitivity, recovery, selectivity, and stability) of soluble acene FET sensors by considering their sensing mechanism. Defects, such as grain boundaries and crystal edges, provide diffusion pathways for target gas molecules to reach the semiconductor-dielectric interface, thereby enhancing sensitivity and recovery. Representative studies on grain boundary engineering, patterning, and pore generation in the formation of soluble acene crystals are reviewed. The phase separation and microstructure of soluble acene/polymer blends for enhancing gas-sensing performance are also reviewed. Finally, flexible gas sensors using soluble acenes and soluble acene/polymer blends are introduced, and future research perspectives in this field are suggested.

A Fully Solution-Printed Photosynaptic Transistor Array with Ultralow Energy Consumption for Artificial-Vision Neural Networks

Photosynaptic organic field-effect transistors (OFETs) represent a viable pathway to develop bionic optoelectronics. However, the high operating voltage and current of traditional photosynaptic OFETs lead to huge energy consumption greater than that of the real biological synapses, hindering their further development in new-generation visual prosthetics and artificial perception systems. Here, a fully solution-printed photosynaptic OFET (FSP-OFET) with substantial energy consumption reduction is reported, where a source Schottky barrier is introduced to regulate charge-carrier injection, and which operates with a fundamentally different mechanism from traditional devices. The FSP-OFET not only significantly lowers the working voltage and current but also provides extraordinary neuromorphic light-perception capabilities. Consequently, the FSP-OFET successfully emulates visual nervous responses to external light stimuli with ultralow energy consumption of 0.07-34 fJ per spike in short-term plasticity and 0.41-19.87 fJ per spike in long-term plasticity, both approaching the energy efficiency of biological synapses (1-100 fJ). Moreover, an artificial optic-neural network made from an 8 × 8 FSP-OFET array on a flexible substrate shows excellent image recognition and reinforcement abilities at a low energy cost. The designed FSP-OFET offers an opportunity to realize photonic neuromorphic functionality with extremely low energy consumption dissipation.

Biorecognition Layer Based On Biotin-Containing [1]Benzothieno[3,2-b][1]benzothiophene Derivative for Biosensing by Electrolyte-Gated Organic Field-Effect Transistors

Requirements of speed and simplicity in testing stimulate the development of modern biosensors. Electrolyte-gated organic field-effect transistors (EGOFETs) are a promising platform for ultrasensitive, fast, and reliable detection of biological molecules for low-cost, point-of-care bioelectronic sensing. Biosensitivity of the EGOFET devices can be achieved by modification with receptors of one of the electronic active interfaces of the transistor gate or organic semiconductor surface. Functionalization of the latter gives the advantage in the creation of a planar architecture and compact devices for lab-on-chip design. Herein, we propose a universal, fast, and simple technique based on doctor blading and Langmuir-Schaefer methods for functionalization of the semiconducting surface of C₈-BTBT-C₈, allowing the fabrication of a large-scale biorecognition layer based on the novel functional derivative of BTBT-containing biotin fragments as a foundation for further biomodification. The fabricated devices are very efficient and operate stably in phosphate-buffered saline solution with high reproducibility of electrical properties in the EGOFET regime. The development of biorecognition properties of the proposed biolayer is based on the streptavidin-biotin interactions between the consecutive layers and can be used for a wide variety of receptors. As a proof-of-concept, we demonstrate the specific response of the BTBT-based biorecognition layer in EGOFETs to influenza A virus (H7N1 strain). The elaborated approach to biorecognition layer formation is appropriate but not limited to aptamer-based receptor molecules and can be further applied for fabricating several biosensors for various analytes on one substrate and paves the way for "electronic tongue" creation.

Scalable Growth of Organic Single-Crystal Films via an Orientation Filter Funnel for High-Performance Transistors with Excellent Uniformity

Organic single-crystal films (OSCFs) provide an unprecedented opportunity for the development of new-generation organic single-crystal electronics. However, crystallization of organic films is normally governed by stochastic nucleation and incoherent growth, posing a formidable challenge to grow large-sized OSCFs. Here, an "orientation filter funnel" concept is presented for the scalable growth of OSCFs with well-aligned, singly orientated crystals. By rationally designing solvent wetting/dewetting patterns on the substrate, this approach can produce seed crystals with the same crystallographic orientation and then maintain epitaxial growth of these crystals, enabling the formation of large-area OSCFs. As a result, this unique concept for crystal growth not only enhances the average mobility of organic film by 4.5-fold but also improves its uniformity of electrical properties, with a low mobility variable coefficient of 9.8%, the new lowest record among organic devices. The method offers a general and scalable route to produce OSCFs toward real-word electronic applications.

High-performance five-ring-fused organic semiconductors for field-effect transistors

Organic molecular semiconductors have been paid great attention due to their advantages of low-temperature processability, low fabrication cost, good flexibility, and excellent electronic properties. As a typical example of five-ring-fused organic semiconductors, a single crystal of pentacene shows a high mobility of up to 40 cm² V^-1 s^-1, indicating its potential application in organic electronics. However, the photo- and optical instabilities of pentacene make it unsuitable for commercial applications. But, molecular engineering, for both the five-ring-fused building block and side chains, has been performed to improve the stability of materials as well as maintain high mobility. Here, several groups (thiophenes, pyrroles, furans, etc.) are introduced to design and replace one or more benzene rings of pentacene and construct novel five-ring-fused organic semiconductors. In this review article, ∼500 five-ring-fused organic prototype molecules and their derivatives are summarized to provide a general understanding of this catalogue material for application in organic field-effect transistors. The results indicate that many five-ring-fused organic semiconductors can achieve high mobilities of more than 1 cm² V^-1 s^-1, and a hole mobility of up to 18.9 cm² V^-1 s^-1 can be obtained, while an electron mobility of 27.8 cm² V^-1 s^-1 can be achieved in five-ring-fused organic semiconductors. The HOMO-LUMO levels, the synthesis process, the molecular packing, and the side-chain engineering of five-ring-fused organic semiconductors are analyzed. The current problems, conclusions, and perspectives are also provided.

Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity

The narrow bandgap of near-infrared (NIR) polymers is a major barrier to improving the performance of NIR phototransistors. The existing technique for overcoming this barrier is to construct a bilayer device (channel layer/bulk heterojunction (BHJ) layer). However, acceptor phases of the BHJ dissolve into the channel layer and are randomly distributed by the spin-coating method, resulting in turn-on voltages (V_o) and off-state dark currents remaining at a high level. In this work, a diffusion interface layer is formed between the channel layer and BHJ layer after treating the film transfer method (FTM)-based NIR phototransistors with solvent vapor annealing (SVA). The newly formed diffusion interface layer makes it possible to control the acceptor phase distribution. The performance of the FTM-based device improves after SVA. V_o decreases from 26 V to zero, and the dark currents decrease by one order of magnitude. The photosensitivity (I_ph/I_dark) increases from 22 to 1.7 × 10⁷.

Flexible organic optoelectronic devices on paper

Paper substrate has many advantages, such as low cost, bendable, foldable, printable, and environmentally friendly recycling. Nowadays, paper has been further extended as a flexible platform to deliver electronic information with the integration of organic optoelectronic devices, such as organic thin-film transistor, organic solar cell, organic electrochromic device, and organic light-emitting device. It has great potential to become the new generation of flexible substrate. Given rough surface and porous of paper, many efforts have been underway in recent years to enable the compatibility between optoelectronics and paper substrate. In this review, we present the development history of paper and its physicochemical properties, and summarize the current development of paper-based organic optoelectronic devices. We also discuss the challenges that need to be addressed before practical uses of paper-based organic optoelectronic devices.

Capillary-Confinement Crystallization for Monolayer Molecular Crystal Arrays

Organic single-crystalline semiconductors are highly desired for the fabrication of integrated electronic circuits, yet their uniform growth and efficient patterning is a huge challenge. Here, a general solution procedure named the "soft-template-assisted-assembly method" is developed to prepare centimeter-scale monolayer molecular crystal (MMC) arrays with precise regulation over their size and location via a capillary-confinement crystallization process. It is remarkable that the field-effect mobility of the array is highly uniform, with variation less than 4.4%, which demonstrates the most uniform organic single-crystal arrays ever reported so far. Simulations based on fluid dynamics are carried out to understand the function mechanism of this method. Thanks to the ultrasmooth crystalline orientation surface of MMCs, high-quality p-n heterojunction arrays can be prepared by weak epitaxy growth of n-type material atop the MMC. The p-n heterojunction field-effect transistors show ambipolar characteristics and the corresponding inverters constructed by these heterojunctions exhibit a competitive gain of 155. This work provides a general strategy to realize the preparation and application of logic complementary circuits based on patterned organic single crystals.