1
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Huang H, Zha J, Xu S, Yang P, Xia Y, Wang H, Dong D, Zheng L, Yao Y, Zhang Y, Chen Y, Ho JC, Chan HP, Zhao C, Tan C. Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se xTe 1-x Nanosheets for p-Type Transistors and Inverters. ACS NANO 2024; 18:17293-17303. [PMID: 38885180 DOI: 10.1021/acsnano.4c05323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.
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Affiliation(s)
- Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Songcen Xu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Huide Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Dechen Dong
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Chunsong Zhao
- Huawei Technologies Co., LTD., Shenzhen 518129, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
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2
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He Z, Su J, Wang YT, Wang K, Wang JL, Li Y, Wang R, Chen QX, Jiang HJ, Hou ZH, Liu JW, Yu SH. Interfacial-Assembly-Induced In Situ Transformation from Aligned 1D Nanowires to Quasi-2D Nanofilms. J Am Chem Soc 2024. [PMID: 38865282 DOI: 10.1021/jacs.4c03730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
As the dimensionality of materials generally affects their characteristics, thin films composed of low-dimensional nanomaterials, such as nanowires (NWs) or nanoplates, are of great importance in modern engineering. Among various bottom-up film fabrication strategies, interfacial assembly of nanoscale building blocks holds great promise in constructing large-scale aligned thin films, leading to emergent or enhanced collective properties compared to individual building blocks. As for 1D nanostructures, the interfacial self-assembly causes the morphology orientation, effectively achieving anisotropic electrical, thermal, and optical conduction. However, issues such as defects between each nanoscale building block, crystal orientation, and homogeneity constrain the application of ordered films. The precise control of transdimensional synthesis and the formation mechanism from 1D to 2D are rarely reported. To meet this gap, we introduce an interfacial-assembly-induced interfacial synthesis strategy and successfully synthesize quasi-2D nanofilms via the oriented attachment of 1D NWs on the liquid interface. Theoretical sampling and simulation show that NWs on the liquid interface maintain their lowest interaction energy for the ordered crystal plane (110) orientation and then rearrange and attach to the quasi-2D nanofilm. This quasi-2D nanofilm shows enhanced electric conductivity and unique optical properties compared with its corresponding 1D geometry materials. Uncovering these growth pathways of the 1D-to-2D transition provides opportunities for future material design and synthesis at the interface.
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Affiliation(s)
- Zhen He
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Jie Su
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, iChEM, University of Science and Technology of China, Hefei 230026, China
| | - Yu-Tao Wang
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kang Wang
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Jin-Long Wang
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yi Li
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Rui Wang
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Qing-Xia Chen
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Hui-Jun Jiang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, iChEM, University of Science and Technology of China, Hefei 230026, China
| | - Zhong-Huai Hou
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, iChEM, University of Science and Technology of China, Hefei 230026, China
| | - Jian-Wei Liu
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Shu-Hong Yu
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
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3
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Ran Y, Song Y, Jia X, Gu P, Cheng Z, Zhu Y, Wang Q, Pan Y, Li Y, Gao Y, Ye Y. Large-Scale Vertically Interconnected Complementary Field-Effect Transistors Based on Thermal Evaporation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309953. [PMID: 38152900 DOI: 10.1002/smll.202309953] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 12/13/2023] [Indexed: 12/29/2023]
Abstract
With the rapid development of integrated circuits, there is an increasing need to boost transistor density. In addition to shrinking the device size to the atomic scale, vertically stacked interlayer interconnection technology is also an effective solution. However, realizing large-scale vertically interconnected complementary field-effect transistors (CFETs) has never been easy. Currently-used semiconductor channel synthesis and doping technologies often suffer from complex fabrication processes, poor vertical integration, low device yield, and inability to large-scale production. Here, a method to prepare large-scale vertically interconnected CFETs based on a thermal evaporation process is reported. Thermally-evaporated etching-free Te and Bi2S3 serve as p-type and n-type semiconductor channels and exhibit FET on-off ratios of 103 and 105, respectively. The vertically interconnected CFET inverter exhibits a clear switching behavior with a voltage gain of 17 at a 4 V supply voltage and a device yield of 100%. Based on the ability of thermal evaporation to prepare large-scale uniform semiconductor channels on arbitrary surfaces, repeated upward manufacturing can realize multi-level interlayer interconnection integrated circuits.
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Affiliation(s)
- Yuqia Ran
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yiwen Song
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Xionghui Jia
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Pingfan Gu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Zhixuan Cheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yunke Zhu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yu Pan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yanping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yunan Gao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
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4
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He Y, Hu Y, Peng M, Fu L, Gao E, Liu Z, Dong C, Li S, Ge C, Yuan C, Bao X, Li K, Chen C, Tang J. One-Dimensional Crystal-Structure Te-Se Alloy for Flexible Shortwave Infrared Photodetector and Imaging. NANO LETTERS 2024; 24:5774-5782. [PMID: 38709116 DOI: 10.1021/acs.nanolett.4c00881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2024]
Abstract
Flexible shortwave infrared detectors play a crucial role in wearable devices, bioimaging, automatic control, etc. Commercial shortwave infrared detectors face challenges in achieving flexibility due to the high fabrication temperature and rigid material properties. Herein, we develop a high-performance flexible Te0.7Se0.3 photodetector, resulting from the unique 1D crystal structure and small elastic modulus of Te-Se alloying. The flexible photodetector exhibits a broad-spectrum response ranging from 365 to 1650 nm, a fast response time of 6 μs, a broad linear dynamic range of 76 dB, and a specific detectivity of 4.8 × 1010 Jones at room temperature. The responsivity of the flexible detector remains at 93% of its initial value after bending with a small curvature of 3 mm. Based on the optimized flexible detector, we demonstrate its application in shortwave infrared imaging. These results showcase the great potential of Te0.7Se0.3 photodetectors for flexible electronics.
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Affiliation(s)
- Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Yuxuan Hu
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Liuchong Fu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ertan Gao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zunyu Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Chong Dong
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Sen Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ciyu Ge
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Can Yuan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiaoqing Bao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Optics Valley Laboratory, Hubei 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Optics Valley Laboratory, Hubei 430074, China
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5
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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6
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Zhao Y, Zhao S, Pang X, Zhang A, Li C, Lin Y, Du X, Cui L, Yang Z, Hao T, Wang C, Yin J, Xie W, Zhu J. Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics. SCIENCE ADVANCES 2024; 10:eadm9322. [PMID: 38578997 PMCID: PMC10997201 DOI: 10.1126/sciadv.adm9322] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Accepted: 03/05/2024] [Indexed: 04/07/2024]
Abstract
Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~104 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.
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Affiliation(s)
- Yingtao Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Sanchuan Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Xixi Pang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Anni Zhang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Chenning Li
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Yuxuan Lin
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Xiaomeng Du
- College of Chemistry, Nankai University, Tianjin 300071, P. R. China
| | - Lei Cui
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Zhenhua Yang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Tailang Hao
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Chaopeng Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Jun Yin
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
| | - Wei Xie
- College of Chemistry, Nankai University, Tianjin 300071, P. R. China
| | - Jian Zhu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China
- Tianjin Key Laboratory of Metal and Molecule-Based Material Chemistry, Nankai University, Tianjin 300350, P. R. China
- Tianjin Key Laboratory for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, P. R. China
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7
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Qi J, Dai Y, Ma C, Ke C, Wang W, Wu Z, Wang X, Bao K, Xu Y, Huang H, Wang L, Wu J, Luo G, Chen Y, Lin Z, He Q. Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306962. [PMID: 37652747 DOI: 10.1002/adma.202306962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/21/2023] [Indexed: 09/02/2023]
Abstract
Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe2. The as-grown 2D tellurium nanosheets exhibit excellent single crystallinity, ideal 2D morphology, surfactant-free surface, and negligible 1D by-products. Furthermore, a unique growth mechanism based on the atomic escape of Te atoms from metastable transition metal dichalcogenides and guided 2D growth in the liquid phase is proposed and verified. 2D tellurium-based field-effect transistors show ultrahigh hole mobility exceeding 1000 cm2 V-1 s-1 at room temperature attributing to the high crystallinity and surfactant-free surface, and exceptional chemical and operational stability using both solid-state dielectric and liquid-state electrical double layer. The facile ultrasonication-assisted synthesis of high-quality 2D tellurium paves the way for further exploration of E2DMs and expands the scope of liquid-phase exfoliation (LPE) methodology toward the controlled wet-chemical synthesis of functional nanomaterials.
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Affiliation(s)
- Junlei Qi
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Chengxuan Ke
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wenbin Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Zongxiao Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Xiang Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Kai Bao
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yue Xu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Lingzhi Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Jingkun Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Guangfu Luo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
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8
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Zhang Y, Meng Y, Wang L, Lan C, Quan Q, Wang W, Lai Z, Wang W, Li Y, Yin D, Li D, Xie P, Chen D, Yang Z, Yip S, Lu Y, Wong CY, Ho JC. Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance. Nat Commun 2024; 15:728. [PMID: 38272917 PMCID: PMC10810900 DOI: 10.1038/s41467-024-44970-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Accepted: 01/11/2024] [Indexed: 01/27/2024] Open
Abstract
High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.
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Affiliation(s)
- Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - You Meng
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Liqiang Wang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Yezhan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Di Yin
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhe Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Chun-Yuen Wong
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan.
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9
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Kim T, Choi CH, Hur JS, Ha D, Kuh BJ, Kim Y, Cho MH, Kim S, Jeong JK. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204663. [PMID: 35862931 DOI: 10.1002/adma.202204663] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Revised: 07/04/2022] [Indexed: 06/15/2023]
Abstract
As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Among them, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low-temperature processibility with conventional complementary-metal-oxide-semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next-generation electronics such as back-end-of-line transistor applications in monolithic 3D integration beyond the display applications, however, there is still much room for further study, such as high mobility, immune short-channel effects, low electrical contact properties, etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next-generation electronics are discussed.
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Affiliation(s)
- Taikyu Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Daewon Ha
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Bong Jin Kuh
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Yongsung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Min Hee Cho
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Sangwook Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
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10
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Kim C, Hur N, Yang J, Oh S, Yeo J, Jeong HY, Shong B, Suh J. Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films. ACS NANO 2023; 17:15776-15786. [PMID: 37432767 DOI: 10.1021/acsnano.3c03559] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2023]
Abstract
Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization. Also, the collection of ALD-producible vdW materials is rather limited by the lack of a material-specific tailored process design. Here, we report the annealing-free wafer-scale growth of monoelemental vdW tellurium (Te) thin films using a rationally designed ALD process at temperatures as low as 50 °C. They exhibit exceptional homogeneity/crystallinity, precise layer controllability, and 100% step coverage, all of which are enabled by introducing a dual-function co-reactant and adopting a so-called repeating dosing technique. Electronically, vdW-coupled and mixed-dimensional vertical p-n heterojunctions with MoS2 and n-Si, respectively, are demonstrated with well-defined current rectification as well as spatial uniformity. Additionally, we showcase an ALD-Te-based threshold switching selector with fast switching time (∼40 ns), selectivity (∼104), and low Vth (∼1.3 V). This synthetic strategy allows the low-thermal-budget production of vdW semiconducting materials in a scalable fashion, thereby providing a promising approach for monolithic integration into arbitrary 3D device architectures.
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Affiliation(s)
- Changhwan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Namwook Hur
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jiho Yang
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jeongin Yeo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
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11
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Fu L, He Y, Zheng J, Hu Y, Xue J, Li S, Ge C, Yang X, Peng M, Li K, Zeng X, Wei J, Xue DJ, Song H, Chen C, Tang J. Te x Se 1-x Photodiode Shortwave Infrared Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211522. [PMID: 36972712 DOI: 10.1002/adma.202211522] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 02/27/2023] [Indexed: 06/16/2023]
Abstract
Short-wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short-wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low-cost, high-performance, and high-stability Tex Se1- x short-wave infrared photodiode detector is reported. The Tex Se1- x thin film is fabricated through CMOS-compatible low-temperature evaporation and post-annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad-spectrum response of 300-1600 nm, a room-temperature specific detectivity of 1.0 × 1010 Jones, a -3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te-based photodiode devices and a dark current density 7 orders of magnitude smaller than Te-based photoconductive and field-effect transistor devices. With a simple Si3 N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized Tex Se1- x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS-compatible infrared imaging chips.
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Affiliation(s)
- Liuchong Fu
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiajia Zheng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yuxuan Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiayou Xue
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Sen Li
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Ciyu Ge
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xuke Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xiangbin Zeng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jinchao Wei
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
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12
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Jeong BJ, Lee B, Choi KH, Sung D, Ghods S, Lee J, Jeon J, Cho S, Lee SH, Kim BJ, Kim SI, Huh J, Yu HK, Lee JH, Choi JY. Controlled Bipolar Doping of One-Dimensional van der Waals Nb 2Pd 3Se 8. NANO LETTERS 2023. [PMID: 37099317 DOI: 10.1021/acs.nanolett.3c00159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Tailoring the electrical properties of one-dimensional (1D) van der Waals (vdW) materials is desirable for their applications toward electronic devices by exploiting their unique characteristics. However, 1D vdW materials have not been extensively investigated for modulation of their electrical properties. Here we control doping levels and types of 1D vdW Nb2Pd3Se8 over a wide energy range by immersion in AuCl3 or β-nicotinamide adenine dinucleotide (NADH) solutions, respectively. Through spectroscopic analyses and electrical characterizations, we confirm that the charges were effectively transferred to Nb2Pd3Se8, and the dopant concentration was adjusted to the immersion time. Furthermore, we make the axial p-n junction of 1D Nb2Pd3Se8 by a selective area p-doping using the AuCl3 solution, which exhibits rectifying behavior with an Iforward/Ireverse of 81 and an ideality factor of 1.2. Our findings could pave the way to more practical and functional electronic devices based on 1D vdW materials.
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Affiliation(s)
- Byung Joo Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bom Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dongchul Sung
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
| | - Soheil Ghods
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Junho Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sooheon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sang Hoon Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bum Jun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seung-Il Kim
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Joonsuk Huh
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Institute of Quantum Biophysics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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13
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Zhang J, Shang C, Dai X, Zhang Y, Zhu T, Zhou N, Xu H, Yang R, Li X. Effective Passivation of Anisotropic 2D GeAs via Graphene Encapsulation for Highly Stable Near-Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13281-13289. [PMID: 36857585 DOI: 10.1021/acsami.2c20030] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Germanium arsenic (GeAs) as a promising two-dimensional (2D) semiconducting material has attracted extensive attention. The high carrier mobility and tunable bandgap of GeAs offer broad prospects in electronic and optoelectronic device-related applications. The unique intrinsic anisotropy arising from the low-symmetry structure can be applied in the design of new devices. However, the rapid degradation of mechanically exfoliated GeAs in the environment poses a challenge to its practical development in scalable devices. Here, an approach to stabilize the sensitive material without isolation from the ambient environment is reported. The graphene capping layer effectively suppresses environmental degradation, enabling the encapsulated GeAs photodetectors to maintain the key electronic properties for more than 3 months under ambient conditions. In addition, the regulation of the work function of graphene significantly improves the device performance. An improved responsivity of 965.07 A/W is 20 times higher than that of pure GeAs. This work provides opportunities for the practical application of GeAs and other environmentally sensitive 2D materials.
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Affiliation(s)
- Jianbin Zhang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
| | - Conghui Shang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Xinyue Dai
- School of Life Sciences, Shanghai University, Shanghai 200444, P. R. China
| | - Yao Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Tao Zhu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Rusen Yang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
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14
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Electrodeposited kochia scoparia-shaped Te film: Controlled synthesis and enhanced visible-light photocatalytic performance. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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15
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Zhang J, Liu M, Zeng Z. The antisolvent coprecipitation method for enhanced bioavailability of poorly water-soluble drugs. Int J Pharm 2022; 626:122043. [PMID: 35902056 DOI: 10.1016/j.ijpharm.2022.122043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Revised: 07/13/2022] [Accepted: 07/18/2022] [Indexed: 11/25/2022]
Abstract
In recent years, poorly water-soluble drug candidates in the drug development pipeline have been a challenging issue for the pharmaceutical industry. Many delivery systems such as nanocrystals, cocrystals, nanoparticles, and amorphous solid dispersions (ASDs) have been developed to overcome these problems. A large number of methods are utilized to realize the above delivery systems. Among all the preparation methods, the antisolvent coprecipitation method is a relatively simple, cost-effective method, offering many advantages over conventional methods. An overview of recent developments for each solubility enhancement approach using the antisolvent coprecipitation method is presented. This current review details a comprehensive overview of the antisolvent coprecipitation process and its properties, as well as the fundamentals for enhancing the solubility and bioavailability of poorly water-soluble drugs by nanotization, polymorph control with polymers and/or surfactants. Furthermore, this review also presents insights into the factors affecting the antisolvent coprecipitation process.
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Affiliation(s)
- Jie Zhang
- College of Biological and Chemical Engineering, Changsha University, Changsha 410022, China; Department of Pharmaceutics, School of Pharmacy, China Pharmaceutical University, Nanjing 210009, China.
| | - Minzhuo Liu
- College of Biological and Chemical Engineering, Changsha University, Changsha 410022, China
| | - Zhihong Zeng
- College of Biological and Chemical Engineering, Changsha University, Changsha 410022, China.
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16
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Wang X, Ge J, Ang NRX, Liang K, Tan CW, Li H, Tay BK. Low-Power Magnetron Sputtering Deposition of Antimonene Nanofilms for Water Splitting Reaction. MICROMACHINES 2022; 13:mi13030489. [PMID: 35334781 PMCID: PMC8951292 DOI: 10.3390/mi13030489] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/10/2022] [Revised: 03/16/2022] [Accepted: 03/17/2022] [Indexed: 11/16/2022]
Abstract
Antimonene (Sb) is a novel kind of two-dimensional (2D) material that is predicted to be promising for various applications, such as water splitting and semiconductor devices. Several methods have been reported to prepare Sb nanoflakes/nanofilms; however, it is still relatively difficult to prepare Sb nanofilms. In this work, a method of low-power magnetron sputtering deposition was used for the preparation of Sb nanofilms with lateral dimensions on the centimeter scale and controllable film thickness. It was found that the control of the deposition temperature is important for the final crystalline structure of the nanofilms. Furthermore, the application of the nanofilms as a catalyst for water splitting (hydrogen evolution reaction (HER) and oxygen evolution reaction (OER)) was demonstrated.
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Affiliation(s)
- Xingli Wang
- UMI 3288 CINTRA (CNRS International-NTU-THALES Research Alliances), Nanyang Technological University, Singapore 637553, Singapore; (X.W.); (J.G.); (K.L.); (C.-W.T.); (H.L.)
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 638798, Singapore;
| | - Junyu Ge
- UMI 3288 CINTRA (CNRS International-NTU-THALES Research Alliances), Nanyang Technological University, Singapore 637553, Singapore; (X.W.); (J.G.); (K.L.); (C.-W.T.); (H.L.)
- School of Mechanical and Aerospace, Nanyang Technological University, Singapore 639798, Singapore
| | - Nicole Ru-Xuan Ang
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 638798, Singapore;
| | - Kun Liang
- UMI 3288 CINTRA (CNRS International-NTU-THALES Research Alliances), Nanyang Technological University, Singapore 637553, Singapore; (X.W.); (J.G.); (K.L.); (C.-W.T.); (H.L.)
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 638798, Singapore;
| | - Chong-Wei Tan
- UMI 3288 CINTRA (CNRS International-NTU-THALES Research Alliances), Nanyang Technological University, Singapore 637553, Singapore; (X.W.); (J.G.); (K.L.); (C.-W.T.); (H.L.)
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 638798, Singapore;
| | - Hong Li
- UMI 3288 CINTRA (CNRS International-NTU-THALES Research Alliances), Nanyang Technological University, Singapore 637553, Singapore; (X.W.); (J.G.); (K.L.); (C.-W.T.); (H.L.)
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 638798, Singapore;
- School of Mechanical and Aerospace, Nanyang Technological University, Singapore 639798, Singapore
| | - Beng Kang Tay
- UMI 3288 CINTRA (CNRS International-NTU-THALES Research Alliances), Nanyang Technological University, Singapore 637553, Singapore; (X.W.); (J.G.); (K.L.); (C.-W.T.); (H.L.)
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 638798, Singapore;
- Correspondence:
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17
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Lee J, Chung YK, Sung D, Jeong BJ, Oh S, Choi JY, Huh J. Carrier mobility of one-dimensional vanadium selenide (V 2Se 9) monolayer and nanoribbon systems: DFT study. NANOTECHNOLOGY 2022; 33:135703. [PMID: 34902844 DOI: 10.1088/1361-6528/ac4288] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Accepted: 12/13/2021] [Indexed: 06/14/2023]
Abstract
Vanadium selenide (V2Se9) is a true one-dimensional (1D) crystal composed of atomic nanochains bonded by van der Waals (vdW) interactions. Recent experiments revealed the mechanical exfoliation of newly synthesized V2Se9. In this study, we predicted the electronic and transport properties of V2Se9through computational analyses. We calculated the intrinsic carrier mobility of V2Se9monolayers (MLs) and nanoribbons (NRs) using density functional theory and deformation potential theory. We found that the electron mobility of the two-dimensional (2D) (010)-plane ML of V2Se9is highly anisotropic, reachingμ2D,ze=1327cm2V-1s-1across the chain direction. The electron mobility of 1D NR systems in a (010)-plane ML of V2Se9along the chain direction continuously increased as the thickness increased from 1-chain to 4-chain NR (width below 3 nm). Interestingly, the electron mobility of 1D 4-chain NR along the chain direction (μ1D,xe=775cm2V-1s-1) was higher than that of a 2D (010)-plane ML (μ2D,xe=567cm2V-1s-1). These results demonstrate the potential of vdW-1D crystal V2Se9as a new nanomaterial for ultranarrow (sub-3 nm width) optoelectronic devices with high electron mobility.
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Affiliation(s)
- Junho Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - You Kyoung Chung
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dongchul Sung
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byung Joo Jeong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Seungbae Oh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jae-Young Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Joonsuk Huh
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Institute of Quantum Biophysics, Sungkyunkwan University, Suwon 16419, Republic of Korea
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