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Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
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Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
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Patel RP, Shah PV, Siraj S, Sahatiya P, Pataniya PM, Sumesh CK. Fabrication of a wearable and foldable photodetector based on a WSe 2-MXene 2D-2D heterostructure using a scalable handprint technique. NANOSCALE 2024; 16:10011-10029. [PMID: 38700054 DOI: 10.1039/d4nr00615a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
Several studies on semiconductor material-based single-band, high-performance photosensitive, and chemically stable photodetectors are available; however, the lack of broad spectral response, device flexibility, and biodegradability prevents them from being used in wearable and flexible electronics. Apart from that, the selection of the device fabrication technique is a very crucial factor nowadays in terms of equipment utilization and environmental friendliness. This report presents a study demonstrating a straightforward solvent- and equipment-free handprint technique for the fabrication of WSe2-Ti3C2TX flexible, biodegradable, robust, and broadband (Vis-NIR) photodetectors. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX), UV-visible spectroscopy, and X-ray photoelectron spectroscopy (XPS) confirm the formation of a WSe2-Ti3C2TX film. The WSe2-Ti3C2TX van der Waals heterostructure plays a key role in enhancing the optoelectrical properties. The as-prepared photodetector exhibits efficient broadband response with a photoresponsivity and a detectivity of 0.3 mA W-1 and 6.8 × 1010 Jones, respectively, under NIR (780 nm) irradiation (1.0 V bias). Under various pressure and temperature conditions, the device's flexibility and durability were tested. The biodegradable photodetector prepared through the solvent- and equipment-free handprint technique has the potential to attract significant interest in wearable and flexible electronics in the future.
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Affiliation(s)
- Rahul P Patel
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - Parth V Shah
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - Sohel Siraj
- Department of Electrical and Electronic Engineering, BITS Pilani Hyderabad, Secunderabad-500078, India
| | - Parikshit Sahatiya
- Department of Electrical and Electronic Engineering, BITS Pilani Hyderabad, Secunderabad-500078, India
| | - Pratik M Pataniya
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - C K Sumesh
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
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Li S, Yan X, Lin Z, Kang L. Wide-Band Gap Binary Semiconductor P 3N 5 with Highly Anisotropic Optical Linearity and Nonlinearity. Inorg Chem 2024; 63:5220-5226. [PMID: 38456453 DOI: 10.1021/acs.inorgchem.4c00261] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Wide-band gap binary semiconductors find extensive use in advanced optoelectronic devices due to their exceptional electronic, optical, and defect properties. This paper systematically investigates the linear and nonlinear optical and defect properties of two P3N5 structures as wide-band gap binary semiconductors and evaluates their responses to external pressure modulation using first-principles calculations. The research demonstrates that the high-pressure phase of P3N5 has a broad UV solar-blind band gap (Eg ∼ 4.9 eV) and displays highly anisotropic optical linearity and nonlinearity, including a significant second harmonic generation effect (d24 ∼ 1.8 pm/V) and large birefringence (Δn ∼ 0.12), exhibiting a relatively small change in amplitude against pressure due to unique lattice incompressibility. This material enables birefringent phase-matched second harmonic coherent output at a much shorter wavelength (down to 286 nm) than currently known wide-band gap binary semiconductors such as SiC, GaN, AlN, Ga2O3, and Si3N4. An in-depth study of the defect properties of P3N5 in relation to its UV optical properties is also provided. These results are important references for utilizing the optoelectronic functions of this binary material system.
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Affiliation(s)
- Shihang Li
- Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaolan Yan
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zheshuai Lin
- Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Kang
- Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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Wang H, Li W, Gloginjić M, Petrović S, Krupska TV, Turov VV, Zhao J, Yang W, Du Z, Chen S. High-Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH-Universal Adaptability Based on Whole Single-Crystal Integrated Self-Supporting 4H-SiC Nanoarrays. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400045. [PMID: 38453678 DOI: 10.1002/smll.202400045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 02/28/2024] [Indexed: 03/09/2024]
Abstract
Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high-performance pH-universal PEC ultraviolet (UV) PD based on a whole single-crystal integrated self-supporting 4H-SiC nanopore array photoelectrode is constructed, which is fabricated using a two-step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W-1 ), detectivity (6.64 × 1013 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm-2 and a bias voltage of 0.6 V, which is fall in the state-of-the-art of the wide-bandgap semiconductor-based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long-term operational stability in pH-universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self-supporting configuration, and single-crystal structure of the whole photoelectrode.
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Affiliation(s)
- Hulin Wang
- School of Resources, Environment and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, P. R. China
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Weijun Li
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Marko Gloginjić
- Laboratory of Physics, Vinča Institute of Nuclear Sciences-National Institute of the Republic of Serbia, University of Belgrade, Belgrade, 11351, Serbia
| | - Srdjan Petrović
- Laboratory of Physics, Vinča Institute of Nuclear Sciences-National Institute of the Republic of Serbia, University of Belgrade, Belgrade, 11351, Serbia
| | - Tetyana V Krupska
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
- Department of Nanoporous and Nanosized Carbon Materials, O. Chuiko Institute of Surface Chemistry, NASU, Kyiv, 03164, Ukraine
| | - Vladimir V Turov
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
- Department of Nanoporous and Nanosized Carbon Materials, O. Chuiko Institute of Surface Chemistry, NASU, Kyiv, 03164, Ukraine
| | - Jialong Zhao
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Zhentao Du
- School of Resources, Environment and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, P. R. China
| | - Shanliang Chen
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
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Debnath S, Meyyappan M, Giri PK. Printed MoSe 2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9039-9050. [PMID: 38324453 DOI: 10.1021/acsami.3c17477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.
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Affiliation(s)
- Subhankar Debnath
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - M Meyyappan
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - P K Giri
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
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Ahmed A, Zahir Iqbal M, Dahshan A, Aftab S, Hegazy HH, Yousef ES. Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review. NANOSCALE 2024; 16:2097-2120. [PMID: 38204422 DOI: 10.1039/d3nr04994a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.
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Affiliation(s)
- Anique Ahmed
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23640, Khyber Pakhtunkhwa, Pakistan.
| | - Muhammad Zahir Iqbal
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23640, Khyber Pakhtunkhwa, Pakistan.
| | - Alaa Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - El Sayed Yousef
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
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Zhang Y, Liu S, Xu R, Ruan S, Liu C, Ma Y, Li X, Chen Y, Zhou J. Solar-blind ultraviolet photodetector based on Nb 2C/ β-Ga 2O 3heterojunction. NANOTECHNOLOGY 2024; 35:165502. [PMID: 38150735 DOI: 10.1088/1361-6528/ad18e7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 12/27/2023] [Indexed: 12/29/2023]
Abstract
β-Ga2O3has been widely investigated for its stability and thermochemical properties. However, the preparation ofβ-Ga2O3thin films requires complex growth techniques and high growth temperatures, and this has hindered the application ofβ-Ga2O3thin films. In this study,β-Ga2O3thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based onβ-Ga2O3with a photocurrent of 2.54 × 10-6A and a dark current of 1.19 × 10-8A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb2C and Ga2O3to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W-1) and good stability. Thus, the Nb2C/β-Ga2O3heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.
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Affiliation(s)
- Yongfeng Zhang
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Shuainan Liu
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Ruiliang Xu
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Shengping Ruan
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Caixia Liu
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Yan Ma
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Xin Li
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Yu Chen
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Jingran Zhou
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
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Wu Y, Sun M. Recent progress of MXene as an energy storage material. NANOSCALE HORIZONS 2024; 9:215-232. [PMID: 38180501 DOI: 10.1039/d3nh00402c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
Thanks to its adjustable interlayer distance, large specific surface area, abundant active sites, and diverse surface functional groups, MXene has always been regarded as an excellent candidate for energy storage materials, including supercapacitors and ion batteries. Recent studies have also shown that MXene can serve as an efficient hydrogen storage catalyst. This review aims to summarize the latest research achievements in the field of MXene, especially its performance and application in energy storage. Different synthesis techniques have different effects on the energy storage performance of MXene. In this review, various common synthesis methods and the latest innovations in synthesis methods are discussed. MXene is prone to oxidation, and how to resist oxidation is also an important topic in MXene research. This article introduces the research results on improving the chemical stability of MXene through annealing. In addition, it aims to gain a deeper understanding of the future development and potential of MXene.
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Affiliation(s)
- Yuqiang Wu
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100086, P. R. China.
| | - Mengtao Sun
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100086, P. R. China.
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Zhou M, Zhao Y, Zhang Q, Gu X, Zhang J, Jiang M, Lu S. Enhance the responsivity of self-driven ultraviolet photodetector by (Al,Ga)N nanowire/graphene/PVDF heterojunction with high stability. OPTICS LETTERS 2024; 49:338-341. [PMID: 38194555 DOI: 10.1364/ol.509752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 12/05/2023] [Indexed: 01/11/2024]
Abstract
Due to the low-power consumption, self-driven ultraviolet (UV) photodetectors have great potentials in a broad range of applications, such as optical communication, ozone monitoring, bio-medicine, and flame detection. In this Letter, it is pretty novel to enhance the photocurrent and responsivity of self-driven UV photodetectors by (Al,Ga)N nanowire/graphene/polyvinylidene fluoride (PVDF) heterojunction successfully. Compared to those of the photodetector with only nanowire/graphene heterojunction, it is found that both the photocurrent and responsivity of the photodetector with nanowire/graphene/PVDF heterojunction can be enhanced more than 100%. It is proposed that PVDF could maintain the internal gain by increasing the number of carrier cycles. Furthermore, this photodetector can also have a high detectivity of 5.3×1011 Jones and fast response speed under 310 nm illumination. After preserving for one month without any special protection, both photocurrent and responsivity of the photodetector with nanowire/graphene/PVDF heterojunction are demonstrated to be quite stable. Therefore, this work paves an effective way to improve the performance of photodetectors for their applications in the fields of next-generation optoelectronic devices.
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Zhang N, Lin Z, Wang Z, Zhu S, Chen D, Qi H, Zheng W. Under-Seawater Immersion β-Ga 2O 3 Solar-Blind Ultraviolet Imaging Photodetector with High Photo-to-Dark Current Ratio and Fast Response. ACS NANO 2024; 18:652-661. [PMID: 38100077 DOI: 10.1021/acsnano.3c08814] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
This work displays a photovoltaic solar-blind UV photodetector based on a β-Ga2O3 photoelectrode/simulated seawater (NaCl). The photodetector exhibits extremely high photocurrent (6.70 μA); the responsivity can reach 23.47 mA W-1, and the fastest response rise time is 40 ms under 213 nm illumination at zero bias, the responsivity is 25.10 mA W-1 at 0.8 V, and the photo-to-dark current ratio reaches a maximum of 4663, whose responsivity can be effectively adjusted by changing electrolyte concentration, ensuring a good working stability of this device. In addition, with original seawater as the electrolyte, the detector still achieves a high switching ratio (754) and stable detection under zero bias, demonstrating its capability for practical uses. What's more, we present the capability of the photodetector in seawater imaging. This work provides a method for solar-blind UV detection in seawater, which compensates for the limited detection of most current seawater detectors in the visible band, and can provide certain guidance in the field of seawater detection.
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Affiliation(s)
- Naiji Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen 518107, China
| | - Zhuogeng Lin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen 518107, China
| | - Zhao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen 518107, China
| | - Siqi Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen 518107, China
| | - Duanyang Chen
- Research Center of Laser Crystal, Shanghai Institute of Optics and fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hongji Qi
- Research Center of Laser Crystal, Shanghai Institute of Optics and fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China
| | - Wei Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen 518107, China
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Chen W, Wang D, Wang W, Kang Y, Liu X, Fang S, Li L, Luo Y, Liang K, Liu Y, Luo D, Memon MH, Yu H, Gu W, Liu Z, Hu W, Sun H. Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307779. [PMID: 38009587 DOI: 10.1002/adma.202307779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 10/15/2023] [Indexed: 11/29/2023]
Abstract
The operational principle of semiconductor devices critically relies on the band structures that ultimately govern their charge-transfer characteristics. Indeed, the precise orchestration of band structure within semiconductor devices, notably at the semiconductor surface and corresponding interface, continues to pose a perennial conundrum. Herein, for the first time, this work reports a novel postepitaxy method: thickness-tunable carbon layer decoration to continuously manipulate the surface band bending of III-nitride semiconductors. Specifically, the surface band bending of p-type aluminum-gallium-nitride (p-AlGaN) nanowires grown on n-Si can be precisely controlled by depositing different carbon layers as guided by theoretical calculations, which eventually regulate the ambipolar charge-transfer behavior between the p-AlGaN/electrolyte and p-AlGaN/n-Si interface in an electrolyte environment. Enabled by the accurate modulation of the thickness of carbon layers, a spectrally distinctive bipolar photoresponse with a controllable polarity-switching-point over a wide spectrum range can be achieved, further demonstrating reprogrammable photoswitching logic gates "XOR", "NAND", "OR", and "NOT" in a single device. Finally, this work constructs a secured image transmission system where the optical signals are encrypted through the "XOR" logic operations. The proposed continuous surface band tuning strategy provides an effective avenue for the development of multifunctional integrated-photonics systems implemented with nanophotonics.
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Affiliation(s)
- Wei Chen
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Danhao Wang
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Weiyi Wang
- Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China
| | - Yang Kang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Xin Liu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Shi Fang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Liuan Li
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Yuanmin Luo
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Kun Liang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Yuying Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230027, P. R. China
| | - Dongyang Luo
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Muhammad Hunain Memon
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Huabin Yu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Wengang Gu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Zhenghui Liu
- Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China
| | - Wei Hu
- Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
- Key Laboratory of Wireless-Optical Communications, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230029, P. R. China
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12
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Meng D, Xu M, Li S, Ganesan M, Ruan X, Ravi SK, Cui X. Functional MXenes: Progress and Perspectives on Synthetic Strategies and Structure-Property Interplay for Next-Generation Technologies. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304483. [PMID: 37730973 DOI: 10.1002/smll.202304483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 07/11/2023] [Indexed: 09/22/2023]
Abstract
MXenes are a class of 2D materials that include layered transition metal carbides, nitrides, and carbonitrides. Since their inception in 2011, they have garnered significant attention due to their diverse compositions, unique structures, and extraordinary properties, such as high specific surface areas and excellent electrical conductivity. This versatility has opened up immense potential in various fields, catalyzing a surge in MXene research and leading to note worthy advancements. This review offers an in-depth overview of the evolution of MXenes over the past 5 years, with an emphasis on synthetic strategies, structure-property relationships, and technological prospects. A classification scheme for MXene structures based on entropy is presented and an updated summary of the elemental constituents of the MXene family is provided, as documented in recent literature. Delving into the microscopic structure and synthesis routes, the intricate structure-property relationships are explored at the nano/micro level that dictate the macroscopic applications of MXenes. Through an extensive review of the latest representative works, the utilization of MXenes in energy, environmental, electronic, and biomedical fields is showcased, offering a glimpse into the current technological bottlenecks, such asstability, scalability, and device integration. Moreover, potential pathways for advancing MXenes toward next-generation technologies are highlighted.
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Affiliation(s)
- Depeng Meng
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Minghua Xu
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Shijie Li
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Muthusankar Ganesan
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Xiaowen Ruan
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Sai Kishore Ravi
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Xiaoqiang Cui
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
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13
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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14
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Li L, Shen G. MXene based flexible photodetectors: progress, challenges, and opportunities. MATERIALS HORIZONS 2023; 10:5457-5473. [PMID: 37818551 DOI: 10.1039/d3mh01362f] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/12/2023]
Abstract
The growing interest in applying 2D transition-metal carbides and nitrides (MXenes) to diverse application fields such as energy storage and harvesters, catalysts, sensors, optoelectronics, electromagnetic interference shielding and antennas since its first discovery in 2011 is clearly evident. Their intrinsic high conductivity limits the development of MXenes in photodetectors that rely on the semiconducting properties of active materials, while the abundant functional groups on the surface of MXenes provide opportunities for using MXenes as sensing materials in the fabrication of flexible photodetectors. Considerable studies on MXene based photodetectors have been carried out, but the main obstacles include seeking novel semiconducting materials in MXene families, the manufacturing technology, etc. This review highlights the progress, challenges and opportunities in MXene based flexible photodetectors and discusses novel materials, architectures, and approaches that capitalize on our growing understanding of MXenes.
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Affiliation(s)
- La Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
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15
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Zhang X, Feng Y, Fu F, Wang H. Preparation of ZnO Nanosheet Array and Research on ZnO/PANI/ZnO Ultraviolet Photodetector. Polymers (Basel) 2023; 15:4399. [PMID: 38006124 PMCID: PMC10674185 DOI: 10.3390/polym15224399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Revised: 10/21/2023] [Accepted: 10/30/2023] [Indexed: 11/26/2023] Open
Abstract
High-performance ultraviolet photodetectors have important scientific research significance and practical application value, which has been the focus of researchers. In this work, we have constructed a highly photosensitive UV photodetector with a unique "sandwich" structure, which was mainly composed of two layers of ZnO nanosheet arrays and one layer of polyaniline (PANI). The results showed that the UV current of ZnO/PANI devices was 100 times higher than that of pure ZnO devices under the same UV irradiation time. At a 365 nm wavelength, the device had excellent photocurrent responsiveness and photoconductivity. This high performance was attributed to the large specific surface area of ZnO nanosheets and the p-n junction formed between P-type PANI nano-porous film and N-type ZnO nanosheets. This provides a solid theoretical basis for the application of ZnO nanosheets in ultraviolet detection, and possesses significance for the development of ultraviolet photodetectors.
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Affiliation(s)
- Xuanzhen Zhang
- Guangzhou Key Laboratory of Sensing Materials & Devices, Center for Interdisciplinary Health Management Studies, College of Physical Education, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China;
| | - Yunhui Feng
- Guangzhou Key Laboratory of Sensing Materials & Devices, Center for Interdisciplinary Health Management Studies, College of Physical Education, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China;
| | - Fangbao Fu
- Guangdong Provincial Key Laboratory of Plant Resources Biorefinery, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China;
| | - Huan Wang
- Guangzhou Key Laboratory of Sensing Materials & Devices, Center for Interdisciplinary Health Management Studies, College of Physical Education, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China;
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16
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Hu H, Zhen W, Yue Z, Niu R, Xu F, Zhu W, Jiao K, Long M, Xi C, Zhu W, Zhang C. A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices. NANOSCALE ADVANCES 2023; 5:6210-6215. [PMID: 37941949 PMCID: PMC10629003 DOI: 10.1039/d3na00525a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 10/05/2023] [Indexed: 11/10/2023]
Abstract
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W-1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.
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Affiliation(s)
- Huijie Hu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Science Island Branch of Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Weili Zhen
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Zhilai Yue
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Rui Niu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Feng Xu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wanli Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Keke Jiao
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
| | - Chuanying Xi
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wenka Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Changjin Zhang
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University Nanjing 210093 China
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17
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Cao F, Hu Z, Yan T, Hong E, Deng X, Wu L, Fang X. A Dual-Functional Perovskite-Based Photodetector and Memristor for Visual Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304550. [PMID: 37467009 DOI: 10.1002/adma.202304550] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 07/16/2023] [Accepted: 07/17/2023] [Indexed: 07/20/2023]
Abstract
The imitation of human visual memory demands the multifunctional integration of light sensors similar to the eyes, and image memory, similar to the brain. Although humans have already implemented electronic devices with visual memory functions, these devices require a combination of various components and logical circuits. However, the combination of visual perception and high-performance information storage capabilities into a single device to achieve visual memory remains challenging. In this study, inspired by the function of human visual memory, a dual-functional perovskite-based photodetector (PD) and memristor are designed to realize visual perception and memory capacities. As a PD, it realizes an ultrahigh self-powered responsivity of 276 mA W-1 , a high detectivity of 4.7 × 1011 Jones (530 nm; light intensities, 2.34 mW cm-2 ), and a high rectification ratio of ≈100 (±2 V). As a memristor, an ultrahigh on/off ratio (≈105 ), an ultralow power consumption of 3 × 10-11 W, a low setting voltage (0.15 V), and a long retention time (>7000 s) are realized. Moreover, the dual-functional device has the capacity to perceive and remember light paths and store data with good cyclic stability. This device exhibits perceptual and cyclic erasable memory functions, which provides new opportunities for mimicking human visual memory in future multifunctional applications.
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Affiliation(s)
- Fa Cao
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Zijun Hu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Tingting Yan
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Enliu Hong
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaolei Deng
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Limin Wu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
- College of Chemistry and Chemical Engineering Inner Mongolia University Hohhot, Hohhot, 010021, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
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18
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Xiong Y, Chen T, Feng W. Broadband high-performance vertical WS 1.08Se 0.92/Si heterojunction photodetector with MXene electrode. NANOTECHNOLOGY 2023; 35:025201. [PMID: 37797612 DOI: 10.1088/1361-6528/ad005a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Accepted: 10/05/2023] [Indexed: 10/07/2023]
Abstract
Vertical semiconductor van der Waals heterojunctions are essential for fabricating high-performance photodetectors. However, the range of the spectral response and defect states of semiconductor materials are two critical factors affecting the performance of photodetectors. In this work, the spectral response range of WS2was changed through WS2band gap regulation, and a self-powered vertical WS1.08Se0.92/Si heterojunction photodetector with MXene electrode was prepared by synthesizing WS1.08Se0.92film on Si substrate and vertically stacking Ti3C2TxMXene on the film. Due to the electron collection of MXene and the wonderful junction quality of WS1.08Se0.92/Si, the photodetector can detect near-infrared light in the range of 980-1310 nm, which exceed the detection limit of WS1.08Se0.92. And the device had high sensitivity in the broadband. The responsivity was 4.58 A W-1, the specific detectivity was 4.58 × 1011Jones, the on/off ratio was 4.95 × 103, and the fast response time was 9.81/9.03μs. These properties are superior to previously reported WS2-based photodetectors. Vertical structure, Energy band tuning, and MXene electrode provide a new idea for preparing broadband high-performance and self-powered photodetector.
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Affiliation(s)
- Yuexu Xiong
- School of Physics and Astronomy, China West Normal University, Nanchong 637009, People's Republic of China
| | - Taihong Chen
- School of Physics and Astronomy, China West Normal University, Nanchong 637009, People's Republic of China
| | - Wenlin Feng
- School of Science, Chongqing University of Technology, Chongqing 400054, People's Republic of China
- Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing 400054, People's Republic of China
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19
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Xu Z, Luo Z, Lin X, Shen C, Wang X, Zhang J, Wang G, Jiang F, Chi N. 15.26Gb/s Si-substrate GaN high-speed visible light photodetector with super-lattice structure. OPTICS EXPRESS 2023; 31:33064-33076. [PMID: 37859094 DOI: 10.1364/oe.498632] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 08/03/2023] [Indexed: 10/21/2023]
Abstract
In this paper, we studied a series of high-speed photodetectors (PD) with different super-lattice interlayer periods and the scale of the effective area to examine their communication performance. The mini-PDs are designed with a single 1 mm × 1 mm effective area. The mini-PDs have three different super-lattice (SL) periods in the interlayer: 8, 15, and 32. The micro-PD sample has multiple 50um by 50um photosensitive areas that form a 4 × 4 receiver array, which shares a common N electrode. Its SL period is 26. The experiment shows that mini-PDs have the advantages such as better tolerance to beam spot deviation, larger field of view (FoV), higher responsibility, and wider peak width in spectral response. But micro-LED samples outperform the others in communication capacity and wavelength selectivity. The 8, 15, and 32 SL mini-PD samples achieve 6.6, 7.3, and 8.8 Gb/s data rates, respectively. The micro-PD gains the maximum data rate of 14.38Gb/s without applying waveform level post-equalization, and 15.26Gb/s after using an NN-based post-equalizer. This experiment shows that with proper DSP, GaN-based PD would be suitable for high-speed VLC systems, especially for the short wavelength spectrum in visible light.
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20
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Yan T, Ge J, Su L, Liu X, Fang X. Designing Ordered Organic Small-Molecule Domains for Ultraviolet Detection and Micrometer-Sized Flexible Imaging. NANO LETTERS 2023; 23:8295-8302. [PMID: 37638790 DOI: 10.1021/acs.nanolett.3c02511] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/29/2023]
Abstract
Photodetectors displaying an ultraviolet (UV) spectral response window are typically based on wide-bandgap semiconductors that have long been dominated by inorganic materials that suffer from bottlenecks of low flexibility and a limited material family. Here, we synthesized a novel organic small molecule and controlled its crystallization to suppress leakage currents and facilitate separation of the carriers, and the relationship between the nanoscale phase separation morphology and the optoelectrical performance of the photodetectors is disclosed. Our optimized organic photodetector (OPD) presents a UV spectral response window, with superior self-powered responsivities of 45 mA/W (under 250 nm light) and 70 mA/W (under 300 nm light), outperforming the Si photodiode and rivaling other reported UV self-powered photodetectors. Finally, an imaging system was constructed to demonstrate the application potential of the OPD in UV flexible imaging with high-resolution arrays of 400 pixels × 400 pixels (5 μm × 5 μm per pixel), which could work in bent states and successfully output images of micrometer-sized objects.
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Affiliation(s)
- Tingting Yan
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Jinfeng Ge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Xinya Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
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21
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Lin S, Liu C, Chen X, Zhang Y, Lin H, Yu X, Bo Y, Lu Y. Self-Driven Photo-Polarized Water Molecule-Triggered Graphene-Based Photodetector. RESEARCH (WASHINGTON, D.C.) 2023; 6:0202. [PMID: 37529624 PMCID: PMC10389694 DOI: 10.34133/research.0202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2023] [Accepted: 07/05/2023] [Indexed: 08/03/2023]
Abstract
Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 109 Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.
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Affiliation(s)
- Shisheng Lin
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Hangzhou Gelanfeng Technology Co. Ltd, Hangzhou 310051, P. R. China
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. China
| | - Chang Liu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Xin Chen
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yi Zhang
- Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, HCSemitek Corporation, Yiwu 322009, P. R. China
| | - Hongtao Lin
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Xutao Yu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yujiao Bo
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yanghua Lu
- Hangzhou Gelanfeng Technology Co. Ltd, Hangzhou 310051, P. R. China
- Smart Materials for Architecture Research Lab, Innovation Center of Yangtze River Delta, Zhejiang University, Jiaxing 314100, P. R. China
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22
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Xu X, Lu C, Wang Y, Bai X, Liu Z, Zhang Y, Hua D. Two dimensional NbSe 2/Nb 2O 5 metal-semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility. NANOSCALE HORIZONS 2023. [PMID: 37326422 DOI: 10.1039/d3nh00172e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic devices due to fast carrier separation and transportation. Considering the superior metallic characteristics accompanied by high electrical conductivity in NbSe2, surface oxidation provides a facile way to form NbSe2/Nb2O5 metal-semiconductor heterostructures. Herein, size-dependent NbSe2/Nb2O5 nanosheets were achieved by a liquid phase exfoliation method and a gradient centrifugation strategy. These NbSe2/Nb2O5 heterostructure-based photodetectors show high responsivity with 23.21 μA W-1, fast response time of millisecond magnitude, and wide band detection ability in the UV-Vis region. It is noticeable that the photocurrent density is sensitive to the surface oxygen layer due to the oxygen-sensitized photoconduction mechanism. The flexible testing of the NbSe2/Nb2O5 heterostructure-based PEC-type photodetectors exhibits high photodetection performance even after bending and twisting. Beyond that, the solid-state PEC-type NbSe2/Nb2O5 photodetector also achieves relatively stable photodetection and high stability. This work promotes the application of 2D NbSe2/Nb2O5 metal-semiconductor heterostructures in flexible optoelectronic devices.
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Affiliation(s)
- Xiang Xu
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Chunhui Lu
- Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Ying Wang
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Xing Bai
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Zenghui Liu
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Ying Zhang
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Dengxin Hua
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
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23
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Wang C, Xu X, Tyagi S, Rout PC, Schwingenschlögl U, Sarkar B, Khandelwal V, Liu X, Gao L, Hedhili MN, Alshareef HN, Li X. Ti 3 C 2 T x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211738. [PMID: 36942383 DOI: 10.1002/adma.202211738] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 03/06/2023] [Indexed: 06/02/2023]
Abstract
Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3 C2 Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF ) of 10-7 mA mm-1 , a record high ION /IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec-1 . This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.
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Affiliation(s)
- Chuanju Wang
- Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xiangming Xu
- Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Shubham Tyagi
- Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Paresh C Rout
- Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Udo Schwingenschlögl
- Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Biplab Sarkar
- Department of Electronics & Communication Engineering, IIT Roorkee, Roorkee, Uttarakhand, 247667, India
| | - Vishal Khandelwal
- Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Microscale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, P. R. China
| | - Linfei Gao
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Microscale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, P. R. China
| | - Mohamed Nejib Hedhili
- Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xiaohang Li
- Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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24
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Yan Y, Li M, Xia K, Yang K, Wu D, Li L, Fei G, Gan W. A two-dimensional Te/ReS 2 van der Waals heterostructure photodetector with high photoresponsivity and fast photoresponse. NANOSCALE 2023; 15:7730-7736. [PMID: 37060126 DOI: 10.1039/d2nr07185a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) semiconductors are the building blocks for high-performance optoelectronic devices. However, the performance of photoconductive photodetectors based on 2D semiconductors is hampered by low photoresponsivity and large dark current. Herein, a van der Waals heterostructure (vdWH) composed of rhenium disulfide (ReS2) and tellurium (Te) is fabricated. The Te/ReS2 vdWH photodetector exhibits a sensitive and broadband photoresponse and has high photoresponse on/off ratios under ultraviolet and visible light illumination, especially over 102 in visible light. The Te/ReS2 vdWH photodetector achieves the responsivity of 7.9 A W-1 at 365 nm, 3.02 A W-1 at 450 nm, 2.37 A W-1 at 532 nm, and 2.45 A W-1 at 660 nm. In addition, the device achieves a high specific detectivity of 1011 Jones and a fast photoresponse speed of 11.9 μs. Such high responsivity could be attributed to the efficient absorption of phonons by the Te/ReS2 vdWH and the high-quality heterostructure interfaces with a small amount of trap states. The highly crystalline structure of Te/ReS2 with a low density of defects reduces the grain boundary scattering, leading to the rapid diffusion of charge carriers. Moreover, the Te/ReS2 vdWH device exhibits a photovoltaic effect and can be employed as a self-powered photodetector (SPPD), which is sensitive to visible light of 450 nm, 532 nm, and 660 nm. Our findings demonstrate that the Te/ReS2 vdWH photodetector is an ideal building block for the next-generation electronic and optoelectronic devices in practical applications.
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Affiliation(s)
- Yafei Yan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Minxin Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kai Xia
- University of Science and Technology of China, Hefei 230026, P. R. China
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Kemeng Yang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Dun Wu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Liang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Guangtao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
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25
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Zi Y, Hu Y, Pu J, Wang M, Huang W. Recent Progress in Interface Engineering of Nanostructures for Photoelectrochemical Energy Harvesting Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2208274. [PMID: 36776020 DOI: 10.1002/smll.202208274] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 01/19/2023] [Indexed: 05/11/2023]
Abstract
With rapid and continuous consumption of nonrenewable energy, solar energy can be utilized to meet the energy requirement and mitigate environmental issues in the future. To attain a sustainable society with an energy mix predominately dependent on solar energy, photoelectrochemical (PEC) device, in which semiconductor nanostructure-based photocatalysts play important roles, is considered to be one of the most promising candidates to realize the sufficient utilization of solar energy in a low-cost, green, and environmentally friendly manner. Interface engineering of semiconductor nanostructures has been qualified in the efficient improvement of PEC performances including three basic steps, i.e., light absorption, charge transfer/separation, and surface catalytic reaction. In this review, recently developed interface engineering of semiconductor nanostructures for direct and high-efficiency conversion of sunlight into available forms (e.g., chemical fuels and electric power) are summarized in terms of their atomic constitution and morphology, electronic structure and promising potential for PEC applications. Extensive efforts toward the development of high-performance PEC applications (e.g., PEC water splitting, PEC photodetection, PEC catalysis, PEC degradation and PEC biosensors) are also presented and appraised. Last but not least, a brief summary and personal insights on the challenges and future directions in the community of next-generation PEC devices are also provided.
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Affiliation(s)
- You Zi
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Yi Hu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Junmei Pu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
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26
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Guo T, Xu X, Liu C, Wang Y, Lei Y, Fang B, Shi L, Liu H, Hota MK, Al-Jawhari HA, Zhang X, Alshareef HN. Large-Area Metal-Semiconductor Heterojunctions Realized via MXene-Induced Two-Dimensional Surface Polarization. ACS NANO 2023; 17:8324-8332. [PMID: 37079914 PMCID: PMC10173692 DOI: 10.1021/acsnano.2c12684] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Direct MXene deposition on large-area 2D semiconductor surfaces can provide design versatility for the fabrication of MXene-based electronic devices (MXetronics). However, it is challenging to deposit highly uniform wafer-scale hydrophilic MXene films (e.g., Ti3C2Tx) on hydrophobic 2D semiconductor channel materials (e.g., MoS2). Here, we demonstrate a modified drop-casting (MDC) process for the deposition of MXene on MoS2 without any pretreatment, which typically degrades the quality of either MXene or MoS2. Different from the traditional drop-casting method, which usually forms rough and thick films at the micrometer scale, our MDC method can form an ultrathin Ti3C2Tx film (ca. 10 nm) based on a MXene-introduced MoS2 surface polarization phenomenon. In addition, our MDC process does not require any pretreatment, unlike MXene spray-coating that usually requires a hydrophilic pretreatment of the substrate surface before deposition. This process offers a significant advantage for Ti3C2Tx film deposition on UV-ozone- or O2-plasma-sensitive surfaces. Using the MDC process, we fabricated wafer-scale n-type Ti3C2Tx-MoS2 van der Waals heterojunction transistors, achieving an average effective electron mobility of ∼40 cm2·V-1·s-1, on/off current ratios exceeding 104, and subthreshold swings of under 200 mV·dec-1. The proposed MDC process can considerably enhance the applications of MXenes, especially the design of MXene/semiconductor nanoelectronics.
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Affiliation(s)
- Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Chen Liu
- Applied Physics, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yizhou Wang
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yongjiu Lei
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Bin Fang
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Lin Shi
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Hang Liu
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Hala A Al-Jawhari
- Department of Physics, King Abdulaziz University, Jeddah 21551 Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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27
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Kundu S, George SJ, Kulkarni GU. Fabrication of High-Performance Visible-Blind Ultraviolet Photodetectors Using Electro-ionic Conducting Supramolecular Nanofibers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19270-19278. [PMID: 36996388 DOI: 10.1021/acsami.3c00716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The detection of ultraviolet (UV) light is vital for various applications, such as chemical-biological analysis, communications, astronomical studies, and also for its adverse effects on human health. Organic UV photodetectors are gaining much attention in this scenario because they possess properties such as high spectral selectivity and mechanical flexibility. However, the achieved performance parameters are much more inferior than the inorganic counterparts because of the lower mobility of charge carriers in organic systems. Here, we report the fabrication of a high-performance visible-blind UV photodetector, using 1D supramolecular nanofibers. The nanofibers are visibly inactive and exhibit highly responsive behavior mainly for UV wavelengths (275-375 nm), the highest response being at ∼275 nm. The fabricated photodetectors demonstrate desired features, such as high responsivity and detectivity, high selectivity, low power consumption, and good mechanical flexibility, because of their unique electro-ionic behavior and 1D structure. The device performance is shown to be improved by several orders through the tweaking of both electronic and ionic conduction pathways while optimizing the electrode material, external humidity, applied voltage bias, and by introducing additional ions. We have achieved optimum responsivity and detectivity values of around 6265 A W-1 and 1.54 × 1014 Jones, respectively, which stand out compared with the previous organic UV photodetector reports. The present nanofiber system has great potential for integration in future generations of electronic gadgets.
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Affiliation(s)
- Suman Kundu
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bengaluru 562162, India
| | - Subi J George
- Supramolecular Chemistry Laboratory, New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru 560064, India
| | - Giridhar U Kulkarni
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bengaluru 562162, India
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru 560064, India
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28
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Zhang Y, Almenabawy S, Kherani NP. Haynes-Shockley experiment analogs in surface and optoelectronics: Tunable surface electric field extracting nearly all photocarriers. SCIENCE ADVANCES 2023; 9:eadg2454. [PMID: 37043571 PMCID: PMC10096577 DOI: 10.1126/sciadv.adg2454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2022] [Accepted: 03/14/2023] [Indexed: 06/19/2023]
Abstract
Photocarriers predominantly recombine at semiconductor surfaces and interfaces, assuming high bulk carrier lifetime. Consequently, understanding the extraction of photocarriers via surfaces is critical to optoelectronics. Here, we propose Haynes-Shockley experiment analogs to investigate photocarrier surface extraction. A Schottky junction is used to tune the silicon near-surface electric field strength that varies over several orders of magnitude and simultaneously observe variations in broadband photocarrier extraction. Schottky barrier height and surface potential are both modulated. Work function tunable indium tin oxide (ITO) is developed to precisely regulate the barrier height and collect photocarriers at 0 V bias, thus avoiding the photocurrent gain effect. All experiments demonstrate >98% broadband internal quantum efficiency. The experiments are further extended to wave interference photonic crystals and random pyramids, paving a way to estimate the photogeneration rate of diverse surface light-trapping topologies by collecting nearly all photocarriers. The insights reported here provide a systematic experimental basis to investigate interfacial effects on photocarrier spatial generation and collection.
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Affiliation(s)
- Yibo Zhang
- The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, ON M5S 3G4, Canada
| | - Sara Almenabawy
- The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, ON M5S 3G4, Canada
| | - Nazir P. Kherani
- The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, ON M5S 3G4, Canada
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, ON M5S 3E4, Canada
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29
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Han Y, Wang Y, Fu S, Ma J, Xu H, Li B, Liu Y. Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p-β Ga 2 O 3 /n-GaN Heterojunction Fabricated by a Reversed Substitution Doping Method. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206664. [PMID: 36683220 DOI: 10.1002/smll.202206664] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 01/12/2023] [Indexed: 06/17/2023]
Abstract
An excellent broad-spectrum (220-380 nm) UV photodetector, covering the UVA-UVC wavelength range, with an ultrahigh detectivity of ≈1015 cm Hz1/2 W-1 , is reported. It is based on a p-β Ga2 O3 /n-GaN heterojunction, in which p-β Ga2 O3 is synthesized by thermal oxidation of GaN and a heterostructure is constructed with the bottom n-GaN. XRD shows the oxide layer is (-201) preferred oriented β-phase Ga2 O3 films. SIMS and XPS indicate that the residual N atoms as dopants remain in β Ga2 O3 . XPS also demonstrates that the Fermi level is 0.2 eV lower than the central level of the band gap, indicating that the dominant carriers are holes and the β Ga2 O3 is p-type conductive. Under a bias of -5 V, the photoresponsivity is 56 and 22 A W-1 for 255 and 360 nm, respectively. Correspondingly, the detectivities reach an ultrahigh value of 2.7 × 1015 cm Hz1/2 W-1 (255 nm) and 1.1 × 1015 cm Hz1/2 W-1 (360 nm). The high performance of this UV photodetector is attributed mainly to the continuous conduction band of the p-β Ga2 O3 /n-GaN heterojunction without a potential energy barrier, which is more helpful for photogenerated electron transport from the space charge region to the n-type GaN layer.
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Affiliation(s)
- Yurui Han
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Yuefei Wang
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Shihao Fu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Jiangang Ma
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Haiyang Xu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Bingsheng Li
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Yichun Liu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
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30
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Tian Y, Li Y, Hu C, Yang Y, Chen D, Shen G. Air-Stable Flexible Photodetector Based on MXene-Cs 3Bi 2I 9 Microplate Schottky Junctions for Weak-Light Detection. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13332-13342. [PMID: 36859765 DOI: 10.1021/acsami.2c22691] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Weak-light detection technology is widely used in various fields, including industry, high-energy physics, precision analysis, and reflection imaging. Metal-semiconductor-metal (MSM) photodetectors demonstrate high detectivity and high response speed and are one of the suitable structures for the preparation of weak-light detectors. However, traditional MSM photodetectors tend to exhibit high dark currents, which are not conducive to performance improvement. Here, a MXene-Cs3Bi2I9-MXene weak-light detector is proposed. Based on the MXene-Cs3Bi2I9 Schottky junctions, the dark current is reduced by 2 orders of magnitude and the responsivity is significantly improved compared with the traditional Cr/Au-Cs3Bi2I9-Cr/Au MSM photodetector. The device demonstrates excellent photodetection capacity with a photoresponsivity of 6.45 A W-1, a specific detectivity of 9.45 × 1011 Jones, and a fast response speed of 0.27/2.32 ms. Especially, the device yielded a superior weak-light detectable limit of 10.66 nW cm-2 and demonstrated excellent optical communication capability. Moreover, such a flexible device shows little degradation in photodetection performance after extreme bending for 4500 cycles, proving remarkable bending endurance and flexibility. The obtained results highlight the great potential of such Cs3Bi2I9/MXene devices as a stable and environmentally friendly candidate for weak-light detection.
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Affiliation(s)
- Yue Tian
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Chuqiao Hu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yaqian Yang
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Di Chen
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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31
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Behnia S, Fathizadeh S, Hosseinnezhad P, Nemati F. Modulation of a DNA-based photodetector: Virus-Chromophore hybridization. Chem Phys 2023. [DOI: 10.1016/j.chemphys.2023.111899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/30/2023]
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32
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Chen J, Zhao J, Feng S, Zhang L, Cheng Y, Liao H, Zheng Z, Chen X, Gao Z, Chen KJ, Hua M. Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208960. [PMID: 36609822 DOI: 10.1002/adma.202208960] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 12/12/2022] [Indexed: 06/17/2023]
Abstract
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN-based devices, especially in terms of device stability and reliability. In this study, this challenge is overcome by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in situ two-step "oxidation-reconfiguration" process. The O plasma treatment overcomes the chemical inertness of the GaN surface, and sequential thermal annealing manipulates the kinetic-thermodynamic reaction pathways to create a metastable GaON nanolayer with a wurtzite lattice. The GaN-derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including a wide bandgap, high thermodynamic stability, and large valence band offset with a GaN substrate. These physical properties can be further leveraged to enhance the performance of GaN-based devices in various applications, such as power systems, complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion.
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Affiliation(s)
- Junting Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China
| | - Junlei Zhao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Sirui Feng
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China
| | - Li Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China
| | - Yan Cheng
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China
| | - Hang Liao
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China
| | - Zheyang Zheng
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Zhen Gao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kevin J Chen
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China
| | - Mengyuan Hua
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
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33
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Yang B, Gao W, Li H, Gao P, Yang M, Pan Y, Wang C, Yang Y, Huo N, Zheng Z, Li J. Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging. NANOSCALE 2023; 15:3520-3531. [PMID: 36723020 DOI: 10.1039/d2nr06642d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Broadband photodetectors are a category of optoelectronic devices that have important applications in modern communication information. γ-InSe is a newly developed two-dimensional (2D) layered semiconductor with an air-stable and low-symmetry crystal structure that is suitable for polarization-sensitive photodetection. Herein, we report a P-N photodiode based on 3D Ge/2D γ-InSe van der Waals heterojunction (vdWH). A built-in electric field is introduced at the p-Ge/n-InSe interface to suppress the dark current and accelerate the separation of photogenerated carriers. Moreover, the heterojunction belongs to the accumulation mode with a well-designed type-II band arrangement, which is suitable for the fast separation of photogenerated carriers. Driven by these advantages, the device exhibits excellent photovoltaic performance within the detection range of 400 to 1600 nm and shows a double photocurrent peak at around 405 and 1550 nm. In particular, the responsivity (R) is up to 9.78 A W-1 and the specific detectivity (D*) reaches 5.38 × 1011 Jones with a fast response speed of 46/32 μs under a 1550 nm laser. Under blackbody radiation, the room temperature R and D* in the mid-wavelength infrared region are 0.203 A W-1 and 5.6 × 108 Jones, respectively. Moreover, polarization-sensitive light detection from 405-1550 nm was achieved, with the dichroism ratios of 1.44, 3.01, 1.71, 1.41 and 1.34 at 405, 635, 808, 1310 and 1550 nm, respectively. In addition, high-resolution single-pixel imaging capability is demonstrated at visible and near-infrared wavelengths. This work reveals the great potential of the γ-InSe/Ge photodiode for high-performance, broadband, air-stable and polarization-sensitive photodetection.
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Affiliation(s)
- Baoxiang Yang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Wei Gao
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Hengyi Li
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Peng Gao
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Yuan Pan
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Chuanglei Wang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Yani Yang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Nengjie Huo
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Jingbo Li
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
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Huo J, Zou G, Xiao Y, Sun T, Feng B, Shen D, Lin L, Wang W, A Z, Liu L. High performance 1D-2D CuO/MoS 2 photodetectors enhanced by femtosecond laser-induced contact engineering. MATERIALS HORIZONS 2023; 10:524-535. [PMID: 36426652 DOI: 10.1039/d2mh01088g] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The integration of 2D materials with other dimensional materials opens up rich possibilities for both fundamental physics and exotic nanodevices. However, current mixed-dimensional heterostructures often suffer from interfacial contact issues and environment-induced degradation, which severely limits their performance in electronics/optoelectronics. Herein, we demonstrate a novel BN-encapsulated CuO/MoS2 2D-1D van der Waals heterostructure photodetector with an ultrahigh photoresponsivity which is 10-fold higher than its previous 2D-1D counterparts. The interfacial contact state and photodetection capabilities of 2D-1D heterojunctions are significantly improved via femtosecond laser irradiation induced MoS2 wrapping and contamination removal. These h-BN protected devices show highly sensitive, gate-tunable and robust photoelectronic properties. By controlling the gate and bias voltages, the device can achieve a photoresponsivity as high as 2500 A W-1 in the forward bias mode, or achieve a high detectivity of 6.5 × 1011 Jones and a typical rise time of 2.5 ms at reverse bias. Moreover, h-BN encapsulation effectively protects the mixed-dimensional photodetector from electrical depletion by gas molecules such as O2 and H2O during fs laser treatment or the operation process, thus greatly improving the stability and service life in harsh environments. This work provides a new way for the further development of high performance, low cost, and robust mixed-dimensional heterostructure photodetectors by femtosecond laser contact engineering.
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Affiliation(s)
- Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
- Taiyuan University of Technology, Taiyuan 030024, China
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Luchan Lin
- Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Zhanwen A
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
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Tang K, Jiang M, Yang B, Xu T, Liu Z, Wan P, Kan C, Shi D. Enhancing UV photodetection performance of an individual ZnO microwire p-n homojunction via interfacial engineering. NANOSCALE 2023; 15:2292-2304. [PMID: 36636950 DOI: 10.1039/d2nr06431f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As a typical broad bandgap semiconductor, ZnO has received considerable attention for developing optoelectronic devices in ultraviolet wavelengths, but suffers from a lack of high-quality single-crystalline p-type ZnO. Herein, we report the realization of a homojunction ultraviolet photodetector, which involves a p-type Sb-doped ZnO microwire (ZnO:Sb MW) and n-type ZnO layer. The p-type conductivity of the as-synthesized ZnO:Sb MWs was evidenced using an individual wire field-effect transistor. Due to its good rectifying ability and excellent photovoltaic effect, the constructed p-ZnO:Sb MW/n-ZnO homojunction is able to work as an ultraviolet photodetector in self-biased and reversely biased manners. By appropriately engineering the band alignment of the p-ZnO:Sb/n-ZnO homojunction via a MgO interface modification layer, the optimized photodetector exhibits performance-enhanced ultraviolet detection capabilities, such as the light on/off ratio reaching up to 1.6 × 108, responsivity of over 267 mA W-1 and specific detectivity of approximately 1.2 × 1014 Jones upon 365 nm light illumination at 0 V. The detector also produces faster response with rise/recovery times of 102 μs/3.6 ms. This study not only employed a novel method to synthesize genuine p-type ZnO with excellent stability and reproducibility, but also opened up substantial opportunities for developing high-performance ZnO homojunction optoelectronic devices.
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Affiliation(s)
- Kai Tang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Mingming Jiang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Bingwang Yang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Tong Xu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Zeng Liu
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Peng Wan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Caixia Kan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Daning Shi
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
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Li SX, Xia H, Liu TY, Zhu H, Feng JC, An Y, Zhang XL, Sun HB. In Situ Encapsulated Moiré Perovskite for Stable Photodetectors with Ultrahigh Polarization Sensitivity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207771. [PMID: 36341484 DOI: 10.1002/adma.202207771] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/23/2022] [Indexed: 06/16/2023]
Abstract
Nanostructures provide a simple, effective, and low-cost route to enhance the light-trapping capability of optoelectronic devices. In recent years, nano-optical structures have been widely used in perovskite optoelectronic devices to greatly enhance the device performance. However, the inherent instability of perovskite materials hinders the practical application of these nanostructured optoelectronic devices. Here, in situ encapsulated moiré lattice perovskite photodetectors (PDs) by two nanograting-structured soft templates with relative rotation angles is fabricated. The confinement growth of the two nanograting templates leads to crystal growth with moiré lattice structure, which improves the light-harvesting ability of the perovskite crystal, thereby improving the device performance. The PD exhibits responsivity to 1026.5 A W-1 . The Moiré lattice-perovskite-based PD maintained 95% of the initial performance after 223 days. After being continuously sprayed with water moist for 180 min, the performance is maintained at 95.7% of its initial level. The nanograting structure endows the device with high polarization sensitivity of Imax /Imin as high as 9.1.
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Affiliation(s)
- Shun-Xin Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Hong Xia
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Tian-Yu Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - He Zhu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Jia-Cheng Feng
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Yang An
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Xu-Lin Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Hong-Bo Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
- State Key Laboratory of Precision Measurement Technology & Instruments, Department of Precision Instrument, Tsinghua University, Haidian district, Beijing, 100084, China
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37
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Highly Dispersed In‐Situ Grown Bi
2
O
3
Nanosheets on Ti
3
C
2
T
x
MXene for Selective Electroreduction of Nitrate to Ammonia. ChemElectroChem 2022. [DOI: 10.1002/celc.202201001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
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Huang PY, Chen HJ, Qin JK, Zhen L, Xu CY. A polarization-sensitive photothermoelectric photodetector based on mixed-dimensional SWCNT-MoS 2 heterostructures. NANOSCALE ADVANCES 2022; 4:5290-5296. [PMID: 36540126 PMCID: PMC9724606 DOI: 10.1039/d2na00609j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Accepted: 09/21/2022] [Indexed: 06/17/2023]
Abstract
Mixed-dimensional van der Waals (vdW) integration has been demonstrated to be effective for the modulation of the physical properties of homogeneous materials. Herein, we reported the enhancement of photothermal conversion and decrease of thermal conductivity in metallic single-walled carbon nanotube (SWCNT) films with the integration of chemical vapor deposition-grown monolayer MoS2 films. The induced temperature gradient in SWCNT-MoS2 hybrid films drives carrier diffusion to generate photocurrent via the photothermoelectric (PTE) effect, and a self-powered photodetector working in the visible band range from 405 to 785 nm was demonstrated. The maximum responsivity of the device increases by 6 times compared to that of the SWCNT counterpart. More importantly, the mixed-dimensional device exhibits polarization-dependent photogeneration, showing a large anisotropy ratio of 1.55. This work paves a way for developing high-performance, polarization-sensitive photodetectors by mixed-dimensional integration.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen) Shenzhen 518055 China
| | - Hong-Ji Chen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen) Shenzhen 518055 China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen) Shenzhen 518055 China
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen) Shenzhen 518055 China
- MOE Key Laboratory of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology Harbin 150080 China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen) Shenzhen 518055 China
- MOE Key Laboratory of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology Harbin 150080 China
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Hou S, Xu C, Ju X, Jin Y. Interfacial Assembly of Ti 3 C 2 T x /ZnIn 2 S 4 Heterojunction for High-Performance Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204687. [PMID: 36285673 PMCID: PMC9762283 DOI: 10.1002/advs.202204687] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) materials have emerged as prospective candidates for electronics and optoelectronics applications as they can be easily fabricated through liquid exfoliation and used to fabricate various structures by further subsequent processing methods in addition to their extraordinary and unique optoelectronic properties. Herein, the Ti3 C2 Tx /ZIS heterostructure with nanometer-thick Ti3 C2 Tx -MXene and ZnIn2 S4 (ZIS) films is fabricated by successive interfacial assembly of liquid exfoliated 2D MXene and ZnIn2 S4 nanoflakes. Benefiting from the superior light-harvesting capability and low dark current of ZnIn2 S4 , the limited absorbance, large scattering coefficient, and high dark current disadvantages of MXene are ameliorated. Meanwhile, the separation and transport of photogenerated carriers in ZnIn2 S4 are improved due to the excellent electrical conductivity of Ti3 C2 Tx nanoflakes. As a result, the as-prepared Ti3 C2 Tx /ZIS heterostructure photodetector has excellent optoelectronic characteristics in terms of a high responsivity of 1.04 mA W-1 , a large specific detectivity up to 1 × 1011 Jones, a huge on/off ratio at around 105 , and an ultralow dark current at ≈10-12 A. This work demonstrates a convenient method to construct heterostructured photodetectors by liquid exfoliated 2D nanoflakes, the as-fabricated Ti3 C2 Tx /ZIS heterostructured photodetectors show promising application potential for low-cost, reliable, and high-performance photodetectors.
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Affiliation(s)
- Shuping Hou
- State Key Laboratory of Electroanalytical ChemistryChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- School of Applied Chemistry and EngineeringUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Chen Xu
- State Key Laboratory of Electroanalytical ChemistryChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- School of Applied Chemistry and EngineeringUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Xingkai Ju
- State Key Laboratory of Electroanalytical ChemistryChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- School of Applied Chemistry and EngineeringUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Yongdong Jin
- State Key Laboratory of Electroanalytical ChemistryChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- School of Applied Chemistry and EngineeringUniversity of Science and Technology of ChinaHefeiAnhui230026China
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40
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Liu X, Liu C, Fu Y, Xu Y, Khan K, Tareen AK, Zhang Y. van der Waals integration of mixed-dimensional CeO 2@Bi heterostructure for high-performance self-powered photodetector with fast response speed. NANOSCALE 2022; 14:16120-16129. [PMID: 36301088 DOI: 10.1039/d2nr04428e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Heterostructures have been extensively investigated for optoelectronic devices owing to their fantastic physicochemical properties. Herein, a mixed-dimensional van der Waals heterostructure (vdWH) CeO2@Bi, 1D ceria (CeO2) loaded with 0D bismuth quantum dots (Bi QDs), is synthesized through a facile hydrothermal bottom-up method. It is found that the fabricated CeO2@Bi-based photoelectrochemical (PEC)-type photodetector (PD) shows self-powered photodetection capability with a fast photoresponse speed of 0.02 s. Besides, a photocurrent of 2.00 μA cm-2 and a photoresponsivity of 888.89 μA W-1 under 365 nm illumination are obtained. Furthermore, good long-term cycle stability is also observed after 1 month in a harsh environment, indicating the great potential for practical applications. These results are further supported by density functional theory (DFT) calculations. We believe that the presented work is expected to provide a new pathway for the future utilization of vdWHs for high-performance optoelectronics.
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Affiliation(s)
- Xinlin Liu
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
| | - Cailing Liu
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
| | - Yushuang Fu
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
| | - Yiguo Xu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Karim Khan
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - Ye Zhang
- School of Chemistry and Chemical Engineering, University of South China, Hengyang 421001, China.
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Guo L, Liu X, Cong R, Gao L, Zhang K, Zhao L, Wang X, Wang RN, Pan C, Yang Z. Patterned 2D Ferroelectric Perovskite Single-Crystal Arrays for Self-Powered UV Photodetector Boosted by Combining Ferro-Pyro-Phototronic and Piezo-Phototronic Effects. NANO LETTERS 2022; 22:8241-8249. [PMID: 36215318 DOI: 10.1021/acs.nanolett.2c02978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Metal halide perovskite ferroelectrics possess various physical characteristics such as piezoelectric and pyroelectric effects, which could broaden the application of perovskite ferroelectrics and enhance the optoelectronic performance. Therefore, it is promising to combine multiple effects to optimize the performance of the self-powered PDs. Herein, patterned 2D ferroelectric perovskite (PMA)2PbCl4 microbelt arrays were demonstrated through a PDMS template-assisted antisolvent crystallization method. The perovskite arrays based flexible photodetectors exhibited fine self-powered photodetection performance under 320 nm illumination and much enhanced reproducibility compared with the randomly distributed single-crystal microbelts-based PDs. Furthermore, by introducing the piezo-phototronic effect, the performance of the flexible PD was greatly enhanced. Under an external tensile strain of 0.71%, the responsivity was enhanced by 185% from 84 to 155.5 mA/W. Our findings offer the advancement of comprehensively utilizing various physical characteristics of the ferroelectrics for novel ferroelectric optoelectronics.
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Affiliation(s)
- Linjuan Guo
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Xiu Liu
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Ridong Cong
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Linjie Gao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Kai Zhang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Lei Zhao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Xinzhan Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Rui-Ning Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, PR China
| | - Zheng Yang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
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Cao X, Lei Z, Zhao S, Tao L, Zheng Z, Feng X, Li J, Zhao Y. Te/SnS 2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties. NANOSCALE ADVANCES 2022; 4:4296-4303. [PMID: 36321139 PMCID: PMC9552753 DOI: 10.1039/d2na00507g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 08/28/2022] [Indexed: 06/16/2023]
Abstract
The tunneling heterojunctions made of two-dimensional (2D) materials have been explored to have many intriguing properties, such as ultrahigh rectification and on/off ratio, superior photoresponsivity, and improved photoresponse speed, showing great potential in achieving multifunctional and high-performance electronic and optoelectronic devices. Here, we report a systematic study of the tunneling heterojunctions consisting of 2D tellurium (Te) and Tin disulfide (SnS2). The Te/SnS2 heterojunctions possess type-II band alignment and can transfer to type-III one under reverse bias, showing a reverse rectification ratio of about 5000 and a current on/off ratio over 104. The tunneling heterojunctions as photodetectors exhibit an ultrahigh photoresponsivity of 50.5 A W-1 in the visible range, along with a dramatically enhanced photoresponse speed. Furthermore, due to the reasonable type-II band alignment and negligible band bending at the interface, Te/SnS2 heterojunctions at zero bias exhibit excellent self-powered performance with a high responsivity of 2.21 A W-1 and external quantum efficiency of 678%. The proposed heterostructure in this work provides a useful guideline for the rational design of a high-performance self-powered photodetector.
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Affiliation(s)
- Xuanhao Cao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zehong Lei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Shuting Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Lili Tao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Xing Feng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Jingbo Li
- Guangdong Key Lab of Chip and Integration Technology, Institute of Semiconductors, South China Normal University Guangzhou 510631 P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
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Tian M, Xu L, Dan H, Yang Y. Extended linear detection range of a Bi 0.5Na 0.5TiO 3 thin film-based self-powered UV photodetector via current and voltage dual indicators. NANOSCALE HORIZONS 2022; 7:1240-1249. [PMID: 35971913 DOI: 10.1039/d2nh00204c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials are widely recognized for their ability to generate photovoltaic voltages larger than their bandgap, making them ideal candidates for photodetector applications. Here, we report a self-powered UV photodetector based on a Bi0.5Na0.5TiO3 (BNT) thin film prepared by the sol-gel method. Compared with conventional photodetectors based on a single detection indicator, the demonstrated photodetector realizes UV light intensity detection over a wide linear range using a current and voltage dual indicator detection method. When the UV light intensity is lower than 1.8 mW cm-2, the voltage can be used to detect the light signal. Conversely, the current can be utilized to detect the signal. This method not only broadens the linear detection range of UV light intensity, making it possible to detect weak UV light of 45.2 nW cm-2, but also allows the detector to maintain relatively high sensitivity within the detectable range. To investigate the distribution of spatial UV light intensity, a self-powered photodetector array system has been utilized to record the output voltage signals as a map.
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Affiliation(s)
- Mingyue Tian
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
| | - Lan Xu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
| | - Huiyu Dan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
| | - Ya Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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Li D, Jia Z, Tang Y, Song C, Liang K, Ren H, Li F, Chen Y, Wang Y, Lu X, Meng L, Zhu B. Inorganic-Organic Hybrid Phototransistor Array with Enhanced Photogating Effect for Dynamic Near-Infrared Light Sensing and Image Preprocessing. NANO LETTERS 2022; 22:5434-5442. [PMID: 35766590 DOI: 10.1021/acs.nanolett.2c01496] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Narrow-band-gap organic semiconductors have emerged as appealing near-infrared (NIR) sensing materials by virtue of their unique optoelectronic properties. However, their limited carrier mobility impedes the implementation of large-area, dynamic NIR sensor arrays. In this work, high-performance inorganic-organic hybrid phototransistor arrays are achieved for NIR sensing, by taking advantage of the high electron mobility of In2O3 and the strong NIR absorption of a BTPV-4F:PTB7-Th bulk heterojunction (BHJ) with an enhanced photogating effect. As a result, the hybrid phototransistors reach a high responsivity of 1393.0 A W-1, a high specific detectivity of 4.8 × 1012 jones, and a fast response of 0.72 ms to NIR light (900 nm). Meanwhile, an integrated 16 × 16 phototransistor array with a one-transistor-one-phototransistor (1T1PT) architecture is achieved. On the basis of the enhanced photogating effect, the phototransistor array can not only achieve real-time, dynamic NIR light mapping but also implement image preprocessing, which is promising for advanced NIR image sensors.
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Affiliation(s)
- Dingwei Li
- Zhejiang University, Hangzhou 310027, People's Republic of China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Zhenrong Jia
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yingjie Tang
- Zhejiang University, Hangzhou 310027, People's Republic of China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Chunyan Song
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Kun Liang
- Zhejiang University, Hangzhou 310027, People's Republic of China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Huihui Ren
- Zhejiang University, Hangzhou 310027, People's Republic of China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Fanfan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Yitong Chen
- Zhejiang University, Hangzhou 310027, People's Republic of China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Yan Wang
- Zhejiang University, Hangzhou 310027, People's Republic of China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Xingyu Lu
- Key Laboratory of Precise Synthesis of Functional Molecules of Zhejiang Province, School of Science, Instrumentation and Service Center for Molecular Sciences, Westlake University, Hangzhou 310024, People's Republic of China
| | - Lei Meng
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
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Cai Q, You H, Hou Q, Tao T, Xie Z, Cao X, Liu B, Chen D, Lu H, Zhang R, Zheng Y. Self-Assembly Nanopillar/Superlattice Hierarchical Structure: Boosting AlGaN Crystalline Quality and Achieving High-Performance Ultraviolet Avalanche Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33525-33537. [PMID: 35830680 DOI: 10.1021/acsami.2c06417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
As a burgeoning wide-band gap semiconductor material, AlxGa1-xN alloy has attracted great attention for versatile applications due to its superior properties. However, its poor crystalline quality has restricted the employment of AlGaN on electronic devices for a long time. Herein, we proposed a nanopillar/superlattice hierarchical structure for AlGaN epitaxy to boost the crystalline quality. The scale-controllable AlN nanopillar template is fabricated from a nickel self-assembly process. AlGaN initiates the epitaxial laterally overgrowth mode based on the nanopatterned template. In addition, the AlxGa1-xN/AlyGa1-yN superlattice structure could effectively block the propagation of threading dislocation segments. The kinetics of the dislocation and epitaxy process in the hierarchical structure is intuitively demonstrated and analyzed. Consequently, the dislocation density of AlGaN grown by this method is significantly reduced by more than 30 times compared to the AlN template. No threading dislocation segments were observed in the 4 μm TEM field of view. Moreover, based on the hierarchical structure, we also fabricated an AlGaN ultraviolet avalanche photodiode (APD). The APD exhibits superior performance, achieving a maximum gain of 1.3 × 105 and high responsivity of 1.46 A/W at 324 nm. The reliability of the nanopillar/superlattice AlGaN epitaxial procedure is anticipated to shed new light on the nitride semiconductor material, further bringing a breakthrough to wide-band gap electronic devices.
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Affiliation(s)
- Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Haifan You
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Qianyu Hou
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Tao Tao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Xun Cao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Hai Lu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
- Institute of Future Display Technology, Tan Kah Kee Innovation Laboratory, Xiamen 361102, China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
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The era of nano-bionic: 2D materials for wearable and implantable body sensors. Adv Drug Deliv Rev 2022; 186:114315. [PMID: 35513130 DOI: 10.1016/j.addr.2022.114315] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Revised: 03/30/2022] [Accepted: 04/29/2022] [Indexed: 12/20/2022]
Abstract
Nano-bionics have the potential of revolutionizing modern medicine. Among nano-bionic devices, body sensors allow to monitor in real-time the health of patients, to achieve personalized medicine, and even to restore or enhance human functions. The advent of two-dimensional (2D) materials is facilitating the manufacturing of miniaturized and ultrathin bioelectronics, that can be easily integrated in the human body. Their unique electronic properties allow to efficiently transduce physical and chemical stimuli into electric current. Their flexibility and nanometric thickness facilitate the adaption and adhesion to human body. The low opacity permits to obtain transparent devices. The good cellular adhesion and reduced cytotoxicity are advantageous for the integration of the devices in vivo. Herein we review the latest and more significant examples of 2D material-based sensors for health monitoring, describing their architectures, sensing mechanisms, advantages and, as well, the challenges and drawbacks that hampers their translation into commercial clinical devices.
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47
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Li Z, Li Z, Zuo C, Fang X. Application of Nanostructured TiO 2 in UV Photodetectors: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109083. [PMID: 35061927 DOI: 10.1002/adma.202109083] [Citation(s) in RCA: 43] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
As a wide-bandgap semiconductor material, titanium dioxide (TiO2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2 -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2 -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.
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Affiliation(s)
- Ziliang Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Ziqing Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Chaolei Zuo
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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48
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Zhu H, Shen Y, Fang Q, Yang X, Chen L, Xu S. GaN/MgI 2 van der Waals heterostructure: a two-factor tunable photocatalyst for hydrogen evolution. Phys Chem Chem Phys 2022; 24:15075-15082. [PMID: 35696996 DOI: 10.1039/d2cp01456d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the increasing environmental pollution and energy crisis, it is significant to develop environmentally friendly and adjustable photocatalysts for water splitting. Here we explored the optoelectronic properties of several H-GaN/MgI2 vdW heterostructures by regulating different polarization surfaces and numbers of GaN layers. Our results demonstrate that all structures, except 2L-Ga-GaN/MgI2, exhibit excellent physical stability. Moreover, the band structures and band edge positions demonstrate that only the heterostructure of 3L-Ga-GaN/MgI2 with both suitable band alignment (type-II) and an acceptable band gap (∼1.92 eV) is most satisfactory for water splitting. Additionally, the absorption coefficient of the 3L-Ga-GaN/MgI2 heterostructure can reach over ∼105 cm-1, which has further confirmed its excellent advantage in photocatalysis. Finally, in the case of 6% external strain for the 3L-Ga-GaN/MgI2 heterostructure, a rollover in band alignment (from type-II to type-I) is exhibited. These promising features of the GaN/MgI2 vdW heterostructure give a new paradigm for developing novel efficient and adjustable photocatalytic water-splitting materials.
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Affiliation(s)
- Hua Zhu
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou, 310018, China.
| | - Yang Shen
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou, 310018, China.
| | - Qianglong Fang
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou, 310018, China.
| | - Xiaodong Yang
- Key Laboratory of Ecophysics and Department of Physics, Shihezi University, Xinjiang 832003, China.
| | - Liang Chen
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou, 310018, China.
| | - Shiqing Xu
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou, 310018, China.
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49
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Wu CY, Wang M, Li J, Le Y, Fei W, Hu JG, Wu D, Zhou YX, Luo LB. Non-Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200594. [PMID: 35561026 DOI: 10.1002/smll.202200594] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Revised: 04/19/2022] [Indexed: 06/15/2023]
Abstract
In this paper, the authors report the fabrication of a sensitive deep ultraviolet (DUV) photodetector by using an individual GaSe nanobelt with a thickness of 52.1 nm, which presents the highest photoresponse at 265 nm illumination with a responsivity and photoconductive gain of about 663 A W-1 and 3103 at a 3 V bias, respectively, comparable to or even better than other reported devices based on conventional wide bandgap semiconductors. According to the simulation, this photoelectric property is associated with the wavelength-dependent absorption coefficient of the GaSe crystal, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a larger penetration depth, leading to a blueshift of the absorption edge with decreasing thickness. Further finite element method (FEM) simulation reveals that the relatively thin GaSe nanobelt exhibits an enhanced transversal standing wave pattern compared to its thicker counterpart at a wavelength of 265 nm, leading to an enhanced light-matter interaction and thereby more efficient photocurrent generation. The device can also function as an effective image sensor with acceptable spatial resolution. This work will shed light on the facile fabrication of a high-performance DUV photodetector from non-ultrawide bandgap semiconductors.
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Affiliation(s)
- Chun-Yan Wu
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Ming Wang
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Jingyue Li
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Yuxuan Le
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Wu Fei
- School of Physics, Hefei University of Technology, Hefei, 230009, China
| | - Ji-Gang Hu
- School of Physics, Hefei University of Technology, Hefei, 230009, China
| | - Di Wu
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Yu-Xue Zhou
- College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
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50
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Zou C, Liu Q, Chen K, Chen F, Zhao Z, Cao Y, Deng C, Wang X, Li X, Zhan S, Gao F, Li S. A high-performance polarization-sensitive and stable self-powered UV photodetector based on a dendritic crystal lead-free metal-halide CsCu 2I 3/GaN heterostructure. MATERIALS HORIZONS 2022; 9:1479-1488. [PMID: 35262131 DOI: 10.1039/d1mh02073k] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu2I3 dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu2I3/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.
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Affiliation(s)
- Can Zou
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Qing Liu
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Kai Chen
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Fei Chen
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Zixuan Zhao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Yunxuan Cao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Congcong Deng
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Xingfu Wang
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Xiaohang Li
- King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955, Saudi Arabia
| | - Shaobin Zhan
- Shenzhen Institute of Information Technology, Innovation and Entrepreneurship School, Shenzhen, 518172, P. R. China.
| | - Fangliang Gao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Shuti Li
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
- 21C Innovation Laboratory, Contemporary Amperex Technology Ltd, Ningde, Fujian, 352100, P. R. China.
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