Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Synthesis and in-depth structure determination of a novel metastable high-pressure CrTe3 phase

This study reports the synthesis and crystal structure determination of a novel CrTe3 phase using various experimental and theoretical methods. The average stoichiometry and local phase separation of this quenched high-pressure phase were characterized by ex situ synchrotron powder X-ray diffraction and total scattering. Several structural models were obtained using simulated annealing, but all suffered from an imperfect Rietveld refinement, especially at higher diffraction angles. Finally, a novel stoichiometrically correct crystal structure model was proposed on the basis of electron diffraction data and refined against powder diffraction data using the Rietveld method. Scanning electron microscopy-energy-dispersive X-ray spectrometry (EDX) measurements verified the targeted 1:3 (Cr:Te) average stoichiometry for the starting compound and for the quenched high-pressure phase within experimental errors. Scanning transmission electron microscopy (STEM)-EDX was used to examine minute variations of the Cr-to-Te ratio at the nanoscale. Precession electron diffraction (PED) experiments were applied for the nanoscale structure analysis of the quenched high-pressure phase. The proposed monoclinic model from PED experiments provided an improved fit to the X-ray patterns, especially after introducing atomic anisotropic displacement parameters and partial occupancy of Cr atoms. Atomic resolution STEM and simulations were conducted to identify variations in the Cr-atom site-occupancy factor. No significant variations were observed experimentally for several zone axes. The magnetic properties of the novel CrTe3 phase were investigated through temperature- and field-dependent magnetization measurements. In order to understand these properties, auxiliary theoretical investigations have been performed by first-principles electronic structure calculations and Monte Carlo simulations. The obtained results allow the observed magnetization behavior to be interpreted as the consequence of competition between the applied magnetic field and the Cr-Cr exchange interactions, leading to a decrease of the magnetization towards T = 0 K typical for antiferromagnetic systems, as well as a field-induced enhanced magnetization around the critical temperature due to the high magnetic susceptibility in this region.

Evidence of Ferromagnetism and Ultrafast Dynamics of Demagnetization in an Epitaxial FeCl2 Monolayer

The development of two-dimensional (2D) magnetism is driven not only by the interest of low-dimensional physics but also by potential applications in high-density miniaturized spintronic devices. However, 2D materials possessing a ferromagnetic order with a relatively high Curie temperature (Tc) are rare. In this paper, the evidence of ferromagnetism in monolayer FeCl2 on Au(111) surfaces, as well as the interlayer antiferromagnetic coupling of bilayer FeCl2, is characterized by using spin-polarized scanning tunneling microscopy. A Curie temperature (Tc) of ∼147 K is revealed for monolayer FeCl2, based on our static magneto-optical Kerr effect measurements. Furthermore, temperature-dependent magnetization dynamics is investigated by the time-resolved magneto-optical Kerr effect. A transition from one- to two-step demagnetization occurs as the lattice temperature approaches Tc, which supports the Elliott-Yafet spin relaxation mechanism. The findings contribute to a deeper understanding of the underlying mechanisms governing ultrafast magnetization in 2D ferromagnetic materials.

Strain-Induced Ferromagnetism in Monolayer T″-Phase VTe2: Unveiling Magnetic States and Anisotropy for Spintronics Advancement

Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the effects of the Hubbard U parameter, biaxial strain, and structural distortions on the magnetic characteristics of T″-phase VTe2. We demonstrate that setting the Hubbard U to 0 eV provides an accurate representation of the observed structural, magnetic, and electronic features for both bulk and monolayer T″-phase VTe2. The application of strain reveals two distinct ferromagnetic states in the monolayer T″-phase VTe2, each characterized by minor structural differences, but notably different magnetic moments. The T″-1 state, with reduced magnetic moments, emerges under compressive strain, while the T″-2 state, featuring increased magnetic moments, develops under tensile strain. Our analysis also compares the magnetic anisotropy between the T and T″ phases of VTe2, highlighting that the periodic lattice distortion in the T″-phase induces an in-plane anisotropy, which makes it a material with an easy-axis of magnetization. Monte Carlo simulations corroborate our findings, indicating a high Curie temperature of approximately 191 K for the T″-phase VTe2. Our research not only sheds light on the critical aspects of the VTe2 system but also suggests new pathways for enhancing low-dimensional magnetism, contributing to the advancement of spintronics and straintronics.

Band-driven switching of magnetism in a van der Waals magnetic semimetal

Magnetic semimetals form an attractive class of materials because of the nontrivial contributions of itinerant electrons to magnetism. Because of their relatively low-carrier-density nature, a doping level of those materials could be largely tuned by a gating technique. Here, we demonstrate gate-tunable ferromagnetism in an emergent van der Waals magnetic semimetal Cr3Te4 based on an ion-gating technique. Upon doping electrons into the system, the Curie temperature (TC) sharply increases, approaching near to room temperature, and then decreases to some extent. This non-monotonous variation of TC accompanies the switching of the magnetic anisotropy, synchronously followed by the sign changes of the ordinary and anomalous Hall effects. Those results clearly elucidate that the magnetism in Cr3Te4 should be governed by its semimetallic band nature.

Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures

Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.

Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides

Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.

Highly anisotropic Fe3C microflakes constructed by solid-state phase transformation for efficient microwave absorption

Soft magnetic materials with flake geometry can provide shape anisotropy for breaking the Snoek limit, which is promising for achieving high-frequency ferromagnetic resonances and microwave absorption properties. Here, two-dimensional (2D) Fe3C microflakes with crystal orientation are obtained by solid-state phase transformation assisted by electrochemical dealloying. The shape anisotropy can be further regulated by manipulating the thickness of 2D Fe3C microflakes under different isothermally quenching temperatures. Thus, the resonant frequency is adjusted effectively from 9.47 and 11.56 GHz under isothermal quenching from 700 °C to 550 °C. The imaginary part of the complex permeability can reach 0.9 at 11.56 GHz, and the minimum reflection loss (RLmin) is -52.09 dB (15.85 GHz, 2.90 mm) with an effective absorption bandwidth (EAB≤-10 dB) of 2.55 GHz. This study provides insight into the preparation of high-frequency magnetic loss materials for obtaining high-performance microwave absorbers and achieves the preparation of functional materials from traditional structural materials.

Controlled Growth of Submillimeter-Scale Cr5Te8 Nanosheets and the Domain Wall Nucleation Governed Magnetization Reversal Process

Two-dimensional (2D) ferromagnets have attracted widespread attention for promising applications in compact spintronic devices. However, the controlled synthesis of high-quality, large-sized, and ultrathin 2D magnets via facile, economical method remains challenging. Herein, we develop a hydrogen-tailored chemical vapor deposition approach to fabricating 2D Cr5Te8 ferromagnetic nanosheets. Interestingly, the time period of introducing hydrogen was found to be crucial for controlling the lateral size, and a Cr5Te8 single-crystalline nanosheet of lateral size up to ∼360 μm with single-unit-cell thickness has been obtained. These samples exhibit a leading role of domain wall nucleation in governing the magnetization reversal process, providing important references for optimizing the performances of associated devices. The nanosheets also show notable magnetotransport response, including nonmonotonous magnetic-field-dependent magnetoresistance and sizable anomalous Hall resistivity, demonstrating Cr5Te8 as a promising material for constructing high-performance magnetoelectronic devices. This study presents a breakthrough of large-sized CVD-grown 2D magnetic materials, which is indispensable for constructing 2D spintronic devices.

Toward intrinsic ultra-high-temperature ferromagnetism in a CrAuTe2/graphene heterosystem

Exploring intrinsic two-dimensional (2D) ferromagnetic (FM) materials with high Curie temperatures (TC) and large magnetic anisotropy energies (MAE) is one of the effective solutions to develop materials for high-performance spintronic applications. Using density functional theory calculations and high-throughput computations, we predict an intrinsic bimetallic FM monolayer, CrAuTe2, which has a large MAE and high TC. The results show that the value of the MAE can reach about 1.5 meV per Cr, and Monte Carlo simulations show that the TC of monolayer CrAuTe2 is about 840 K. Further analysis indicates that the joint effects of spin-orbit coupling (SOC) interaction and magnetic dipole-dipole interaction result in high in-plane magnetic anisotropy. In addition, this monolayer has good dynamic, thermal, and mechanical stabilities, which were confirmed by ab initio molecular dynamics simulations, phonon spectra, and elastic constants, respectively. In order to propose a practical synthesis approach, we built a CrAuTe2/graphene van der Waals heterostructure, and found that the heterostructure does not affect the magnetic properties of monolayer CrAuTe2. These findings appear promising for the future applications in nano-spintronics.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Surface Stability and Exfoliability of Non-van der Waals Magnetic Chromium Tellurides

Exfoliation of two-dimensional (2D) magnetic materials from non-van der Waals (non-vdW) materials has attracted increasing attention because it provides a great platform for the construction of 2D magnetic materials. For non-vdW magnetic chromium tellurides with high Curie temperatures, their few-layer samples show promising applications in the field of spintronics. However, there is still no consensus on whether the surface structures of few-layer chromium tellurides should be terminated by Cr or Te atoms. By calculating the surface and exfoliation energy, we find that which structure is more stable depends greatly on the value of the chemical potential of Te atoms, and the few-layer sample with a Cr-terminated surface is easier to exfoliate than that with both Te-terminated surfaces. Finally, we propose that different exfoliated structures can be identified by using the atomic number ratio of Cr to Te and the average magnetic moment of Cr atoms in few-layer samples.

Emergent Intrinsic Ferromagnetism in Two-Dimensional Trigonal Rhodium Oxide

Two-dimensional (2D) van der Waals single crystals with long-range magnetic order are the precondition and urgent task for developing a 2D spintronics device. In contrast to graphene and transition metal dichalcogenides, the study of 2D single-crystal metal oxides with intrinsic ferromagnetic properties remains a huge challenge. Here, we report a large-size trigonal single-crystal rhodium oxide (SC-Tri-RhO2), with crystal parameters of a = b = 3.074 Å, c = 6.116 Å, and a space group of P3̅m1 (164), exhibiting strong ferromagnetism (FM) at a rather high temperature. Furthermore, theoretical calculations suggest that the ferromagnetism in SC-Tri-RhO2 originates from spin splitting near the Fermi level, and the total magnetic moment is contributed mainly by the Rh atom.

2D Ferroic Materials for Nonvolatile Memory Applications

The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr₂Te₃ thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr₂Te₃ epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr₂Te₃ near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr₂Te₃ thin films offers new opportunities for topological electronics.

Widely Tunable Berry Curvature in the Magnetic Semimetal Cr1+ δ Te2

Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Cr_{1+ δ} Te₂ is a self-intercalated magnetic transition metal dichalcogenide (TMD), which exhibits topological magnetism and tunable electron filling. While recent studies have explored real-space Berry curvature effects, similar considerations of momentum-space Berry curvature are lacking. Here, the electronic structure and transport properties of epitaxial Cr_{1+ δ} Te₂ thin films are systematically investigated over a range of doping, δ (0.33 - 0.71). Spectroscopic experiments reveal the presence of a characteristic semi-metallic band region, which shows a rigid like energy shift with δ. Transport experiments show that the intrinsic component of the anomalous Hall effect (AHE) is sizable and undergoes a sign flip across δ. Finally, density functional theory calculations establish a link between the doping evolution of the band structure and AHE: the AHE sign flip is shown to emerge from the sign change of the Berry curvature, as the semi-metallic band region crosses the Fermi energy. These findings underscore the increasing relevance of momentum-space Berry curvature in magnetic TMDs and provide a unique platform for intertwining topological physics in real and momentum spaces.

Growth, structure, and morphology of van der Waals epitaxy Cr1+δTe2 films

The preparation of two-dimensional magnetic materials is a key process to their applications and the study of their structure and morphology plays an important role in the growth of high-quality thin films. Here, the growth, structure, and morphology of Cr_1+δTe₂ films grown by molecular beam epitaxy on mica with variations of Te/Cr flux ratio, growth temperature, and film thickness have been systematically investigated by scanning tunneling microscopy, reflection high-energy electron diffraction, scanning electron microscope, and X-ray photoelectron spectroscopy. We find that a structural change from multiple phases to a single phase occurs with the increase in growth temperature, irrespective of the Cr/Te flux ratios, which is attributed to the desorption difference of Te atoms at different temperatures, and that the surface morphology of the films grown at relatively high growth temperatures (≥ 300 °C) exhibits a quasi-hexagonal mesh-like structure, which consists of nano-islands with bending surface induced by the screw dislocations, as well as that the films would undergo a growth-mode change from 2D at the initial stage in a small film thickness (2 nm) to 3D at the later stage in thick thicknesses (12 nm and 24 nm). This work provides a general model for the study of pseudo-layered materials grown on flexible layered substrates.

Supercritical CO2 -induced New Chemical Bond of C-O-Si in Graphdiyne to Achieve Robust Room-Temperature Ferromagnetism

The realization of ferromagnetic ordering of two-dimensional (2D) carbon material graphdiyne (GDY) has attracted great attention due to its promising application in spin semiconductor devices. However, the absence of localized spins makes the pristine GDY intrinsically nonferromagnetic. Herein, we report the realization of robust room-temperature (RT) ferromagnetism (FM) with Curie temperature (T_C ) up to 325 K for GDY Nanosheets (GDYNs) by supercritical CO₂ (SC CO₂ ). Experimental and theoretical calculations reveal that the new chemical bond of C-O-Si can be formed because of the unique effect of SC CO₂ , which help to enhance the charge transfer and generates long-range ferromagnetic order. The RT saturation magnetization (M_S ) reaches 1.125 emu/g, which is much higher than that of carbon-based materials reported up to now. Meanwhile, by changing the conditions of SC CO₂ such as pressure, ferromagnetic responses can be manipulated, which is great for potential spintronics applications of GDY.

Atomic scale insights into the epitaxial growth mechanism of 2D Cr3Te4 on mica

Two-dimensional (2D) magnetic materials are of wide research interest owing to their promising applications in spintronic devices. Among them, chromium chalcogenide compounds are some of the limited available systems that present both high stability in air and high Curie temperatures. Epitaxial growth techniques based on chemical vapour deposition (CVD) have been demonstrated to be a robust method for growing 2D non-layered chromium chalcogenides. However, the growth mechanism is not well-understood. Here, we demonstrate the epitaxial growth of Cr₃Te₄ nanoplates with high quality on mica. Atomic-resolution scanning transmission electron microscopy (STEM) imaging reveals that the epitaxial growth is based on nanosized chromium oxide seed particles at the interface of Cr₃Te₄ and mica. The chromium oxide nanoparticle exhibits a coherent interface with both mica and Cr₃Te₄ with a lattice mismatch within 3%, suggesting that, as a buffer layer, chromium oxide can release the interfacial strain, and induce the growth of Cr₃Te₄ although there is a distinct oxygen-content difference between mica and Cr₃Te₄. This work provides an experimental understanding behind the epitaxial growth of 2D magnetic materials at the atomic scale and facilitates the improvement of their growth procedures for devices with high crystalline quality.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation

Room-temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano-spintronic devices. However, such skyrmion-hosting materials are rare in nature. In this study, a self-intercalated transition metal dichalcogenide Cr_{1+ x} Te₂ with a layered crystal structure that hosts room-temperature skyrmions and exhibits large THE is reported. By tuning the self-intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out-of-plane to the in-plane configuration are achieved. Based on the intercalation engineering, room-temperature skyrmions are successfully created in Cr_1.53 Te₂ with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion-induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.

Composition-Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe5 Se8 to Metallic Fe3 Se4 Nanosheets

Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr₂ S₃ , Cr₅ Te₈ ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe₅ Se₈ and 50% Fe-intercalated monoclinic Fe₃ Se₄ ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe₅ Se₈ exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe₂ to non-layered Fe-intercalated Fe₅ Se₈ based on density functional theory calculations. In contrast, the ultrathin Fe₃ Se₄ presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.

Layer-Number-Independent Two-Dimensional Ferromagnetism in Cr3Te4

In a conventional magnetic material, a long-range magnetic order develops in three dimensions, and reducing a layer number weakens its magnetism. Here we demonstrate anomalous layer-number-independent ferromagnetism down to the two-dimensional (2D) limit in a metastable phase of Cr₃Te₄. We fabricated Cr₃Te₄ thin films by molecular-beam epitaxy and found that Cr₃Te₄ could host two distinct ferromagnetic phases characterized with different Curie temperatures (T_C). One is the bulk-like "high-T_C phase" showing room-temperature ferromagnetism, which is consistent with previous studies. The other is the metastable "low-T_C phase" with T_C ≈ 160 K, which exhibits a layer-number-independent T_C down to the 2D limit in marked contrast with the conventional high-T_C phase, demonstrating a purely 2D nature of its ferromagnetism. Such significant differences between two distinct phases could be attributed to a small variation in the doping level, making this material attractive for future ultracompact spintronics applications with potential gate-tunable room-temperature 2D ferromagnetism.

Diverse Thermal Expansion Behaviors in Ferromagnetic Cr1-δTe with NiAs-Type, Defective Structures

Negative thermal expansion (NTE) and zero thermal expansion (ZTE) properties are of great significance for the long-life stable operation of precision equipment. However, there are still existing challenges in finding new materials that exhibit NTE or ZTE over a wide temperature range. Here, we report negative, zero, and positive thermal expansion in NiAs-type, defective Cr_1-δTe, containing three compounds: hexagonal CrTe, monoclinic Cr₃Te₄, and trigonal Cr₅Te₈. CrTe shows the NTE behavior from 280 to 340 K with the volume coefficient of thermal expansion α_V = -27.6 × 10^-6 K^-1. Cr₃Te₄ shows the ZTE behavior over a wide temperature range of 180-320 K (α_V = 0.16 × 10^-6 K^-1). And Cr₅Te₈ holds the PTE behavior over the whole temperature range (α_V = 38.5 × 10^-6 K^-1). All of the samples show obvious anisotropic thermal expansion on heating. Combined with the magnetic measurements, it can be confirmed that the NTE and ZTE properties in ferromagnetic Cr_1-δTe originate from the magnetovolume effect (MVE). Such NiAs-type, defective compounds with similar compositions but different structures provide a new perspective for tuning the NTE properties of materials and searching for new materials with ZTE over a wide temperature range.

Epitaxial growth and electronic properties of an antiferromagnetic semiconducting VI2 monolayer

The van der Waals materials down to the monolayer (ML) limit provide a fertile platform for exploring low-dimensional magnetism and developing the novel applications of spintronics. Among them, due to the absence of the net magnetic moment, antiferromagnetic (AFM) materials have received much less attention than ferromagnetic ones. Here, by combining scanning tunneling microscopy and state-of-the-art first-principles calculations, we investigate the preparation, and electronic and magnetic properties of a vanadium(II) iodide (VI₂) ML. Single-layer VI₂ has been grown by molecular beam epitaxy on Au(111) surfaces. A band gap of 2.8 eV is revealed, indicating the semiconducting nature of the VI₂ ML. Vanadium and iodine vacancy defects give rise to additional feature states within the bandgap. A typical 120° AFM spin ordering is maintained in the ML limit of VI₂, as revealed by the first-principles calculations. Besides, the AFM coupling is greatly enhanced by slightly decreasing lattice constants. Our work provides an ideal platform for further studying two-dimensional magnetism with non-collinear AFM ordering and for investigating the possibility of realizing the spin Hall effect in the ML limit.

On-Site Synthesis and Characterizations of Atomically-Thin Nickel Tellurides with Versatile Stoichiometric Phases through Self-Intercalation

Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe₂, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe₂ and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe₂ to self-intercalated Ni₃Te₄ and Ni₅Te₆. The synthesis of Ni self-intercalated Ni_xTe_y compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe₂ intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.

Emergent Topological Hall Effect from Exchange Coupling in Ferromagnetic Cr2Te3/Noncoplanar Antiferromagnetic Cr2Se3 Bilayers

The topological Hall effect has been observed in magnetic materials of complex spin structures or bilayers of trivial magnets and strong spin-orbit-coupled systems. In view of current attention on dissipationless topological electronics, the occurrence of the topological Hall effect in new systems or by an unexpected mechanism is fascinating. Here, we report a robust topological Hall effect generated in bilayers of a ferromagnet and a noncoplanar antiferromagnet, from the interfacial Dzyaloshinskii-Moriya interaction due to the exchange coupling of magnetic layers. Molecular beam epitaxy has been utilized to fabricate heterostructures of a ferromagnetic metal Cr₂Te₃ and a noncoplanar antiferromagnet Cr₂Se₃. A significant topological Hall effect at low temperature implies the development of nontrivial spin chirality, and density functional theory calculations explain the correlation of the Dzyaloshinskii-Moriya interaction increase and inversion symmetry breaking at the interface. The presence of noncoplanar ordering in the antiferromagnet plays a pivotal role in producing the topological Hall effect. Our results suggest that the exchange coupling in ferromagnet/noncoplanar antiferromagnet bilayers could be an alternative mechanism toward topologically protected magnetic structures.

Ultrathin Van der Waals Antiferromagnet CrTe3 for Fabrication of In-Plane CrTe3 /CrTe2 Monolayer Magnetic Heterostructures

Ultrathin van der Waals (vdW) magnets are heavily pursued for potential applications in developing high-density miniaturized electronic/spintronic devices as well as for topological physics in low-dimensional structures. Despite the rapid advances in ultrathin ferromagnetic vdW magnets, the antiferromagnetic counterparts, as well as the antiferromagnetic junctions, are much less studied owing to the difficulties in both material fabrication and magnetism characterization. Ultrathin CrTe₃ layers have been theoretically proposed to be a vdW antiferromagnetic semiconductor with intrinsic intralayer antiferromagnetism. Herein, the epitaxial growth of monolayer (ML) and bilayer CrTe₃ on graphite surface is demonstrated. The structure, electronic and magnetic properties of the ML CrTe₃ are characterized by combining scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy and confirmed by density functional theory calculations. The CrTe₃ MLs can be further utilized for the fabrication of a lateral heterojunction consisting of ML CrTe₂ and ML CrTe₃ with an atomically sharp and seamless interface. Since ML CrTe₂ is a metallic vdW magnet, such a heterostructure presents the first in-plane magnetic metal-semiconductor heterojunction made of two vdW materials. The successful fabrication of ultrathin antiferromagnetic CrTe₃ , as well as the magnetic heterojunction, will stimulate the development of miniaturized antiferromagnetic spintronic devices based on vdW materials.

Chiral molecular intercalation superlattices

The discovery of chiral-induced spin selectivity (CISS) opens up the possibility to manipulate spin orientation without external magnetic fields and enables new spintronic device designs^1-4. Although many approaches have been explored for introducing CISS into solid-state materials and devices, the resulting systems so far are often plagued by high inhomogeneity, low spin selectivity or limited stability, and have difficulties in forming robust spintronic devices^5-8. Here we report a new class of chiral molecular intercalation superlattices (CMIS) as a robust solid-state chiral material platform for exploring CISS. The CMIS were prepared by intercalating layered two-dimensional atomic crystals (2DACs) (such as TaS₂ and TiS₂) with selected chiral molecules (such as R-α-methylbenzylamine and S-α-methylbenzylamine). The X-ray diffraction and transmission electron microscopy studies demonstrate highly ordered superlattice structures with alternating crystalline atomic layers and self-assembled chiral molecular layers. Circular dichroism studies show clear chirality-dependent signals between right-handed (R-) and left-handed (S-) CMIS. Furthermore, by using the resulting CMIS as the spin-filtering layer, we create spin-selective tunnelling junctions with a distinct chirality-dependent tunnelling current, achieving a tunnelling magnetoresistance ratio of more than 300 per cent and a spin polarization ratio of more than 60 per cent. With a large family of 2DACs of widely tunable electronic properties and a vast selection of chiral molecules of designable structural motifs, the CMIS define a rich family of artificial chiral materials for investigating the CISS effect and capturing its potential for new spintronic devices.

Vanadium-Doped Molybdenum Diselenide Atomic Layers with Room-Temperature Ferromagnetism

Two-dimensional diluted magnetic semiconductors with high Curie temperature are highly sought after because of their potential applications in spintronics. Development of new techniques for preparation of high quanlity diluted magnetic semiconductors is critical for their applications. In this study, vanadium-doped molybdenum selenide, a new diluted magnetic semiconductor, was synthesized by a single-step chemical vapor deposition method. The merit of this method is that the molybdenum and vanadium precursors can be supplied to the growth substrate uniformly. Photoluminescence measurements reveal that the band gap of MoSe 2 decreases after doping, which can be attributed to the formation of impurity energy band caused by p-type doping at the valence band maximum. Thus, the V-doped MoSe 2 still maintains the semiconducting characteristics. Vibrating sample magnetometer studies clearly show the ferromagnetism of V-doped MoSe 2 at room temperature. DFT calculations illustrates the joint contribution of V dopants and nearby atoms to the magnetic moments. This study provides future prospects for the multifunctional application of two-dimensional materials.

Planar Heterojunction of Ultrathin CrTe3 and CrTe2 van der Waals Magnet

The fabrication of planar heterojunctions with magnetic van der Waals ultrathin crystals is essential for constructing miniaturized spintronic devices but is yet to be realized. Here, we report the growth of CrTe₃ and CrTe₂ ultrathin films with molecular beam epitaxy and characterize their morphological and electronic structure through low-temperature scanning tunneling microscopy/spectroscopy. The former is identified as a Mott insulator, and the latter has shown a robust magnetic order previously. Through vacuum annealing, CrTe₃ can be transformed into CrTe₂, whose relative ratio is controlled via the annealing time. This renders the feasibility of constructing CrTe₃-CrTe₂ planar heterojunctions, which express atomically sharp interfaces and smooth band bending. We also identified a superstructure conceivably formed via hybrid units of CrTe₃ and CrTe₂, whose electronic structure exhibits stunning tunability with the length of the superstructure. Our study sets a foundation for the development of magnetic tunneling junctions for building spintronic circuits and engineering electronic states in artificial superlattice structures.

Coexistence of Semiconducting Ferromagnetics and Piezoelectrics down 2D Limit from Non van der Waals Antiferromagnetic LiNbO3-Type FeTiO3

Stable two-dimensional (2D) ferromagnetic semiconductors (FMSs) with multifunctional properties have attracted extensive attention in device applications. Non van der Waals (vdW) transition-metal oxides with excellent environmental stability, if ferromagnetic (FM), may open up an unconventional and promising avenue for this subject, but they are usually antiferromagnetic or ferrimagnetic. Herein, we predict an FMS, monolayer Fe₂Ti₂O₉, which can be obtained from LiNbO₃-type FeTiO₃ antiferromagnetic bulk, has a moderate band gap of 0.87 eV, large perpendicular magnetization (6 μ_B/fu) and a Curie temperature up to 110 K. The intriguing magnetic properties are derived from the double exchange and negative charge transfer between O_p orbitals and Fe_d orbitals. In addition, a large in-plane piezoelectric (PE) coefficient d₁₁ of 5.0 pm/V is observed. This work offers a competitive candidate for multifunctional spintronics and may stimulate further experimental exploration of 2D non-vdW magnets.

Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects

The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.

Two-dimensional magnetic atomic crystals

Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.

Transition Metal-Free Half-Metallicity in Two-Dimensional Gallium Nitride with a Quasi-Flat Band

Two-dimensional half-metallicity without a transition metal is an attractive attribute for spintronics applications. On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band. We found that graphene plays a crucial role in stabilizing a local octahedral structure, whose unusually high density of states due to a flat band leads to a spontaneous phase transition to its half-metallic phase from normal metal. It was also found that its half-metallicity is strongly correlated to the in-plane lattice constants and thus subjected to substrate modification. To investigate the magnetic property, we simplified its magnetic structure with a two-dimensional Heisenberg model and performed Monte Carlo simulation. Our simulation estimated its Curie temperature (T_C) to be ∼165 K under a weak external magnetic field, suggesting that transition metal-free 2D-GaN exhibiting p orbital-based half-metallicity can be utilized in future spintronics.

Van der Waals Superstructure and Twisting in Self-Intercalated Magnet with Near Room-Temperature Perpendicular Ferromagnetism

The emergence of van der Waals (vdW) magnets has created unprecedented opportunities to manipulate magnetism for advanced spintronics based upon all-vdW heterostructures. Among various vdW magnets, Cr_1+δTe₂ possesses high temperature ferromagnetism along with possible topological spin textures. As this system can support self-intercalation in the vdW gap, it is crucial to precisely pinpoint the exact intercalation to understand the intrinsic magnetism of the system. Here, we developed an iterative method to determine the self-intercalated structures and show evidence of vdW "superstructures" in individual Cr_1+δTe₂ nanoplates exhibiting magnetic behaviors distinct from bulk chromium tellurides. Among 26,332 possible configurations, we unambiguously identified the Cr-intercalated structure as 3-fold symmetry broken Cr_1.5Te₂ segmented by vdW gaps. Moreover, a twisted Cr-intercalated layered structure is observed. The spontaneous formation of twisted vdW "superstructures" not only provides insight into the diverse magnetic properties of intercalated vdW magnets but may also add complementary building blocks to vdW-based spintronics.

Diverse Structures and Magnetic Properties in Nonlayered Monolayer Chromium Selenide

Thickness-dependent magnetic behavior has previously been observed in chemical vapor deposition-grown chromium selenide. However, the low-dimensional structure in nonlayered chromium selenide, which plays a crucial role in determining the low-dimensional magnetic order, needs further study. Here, we report the structure-dependent magnetic properties in monolayer CrSe₂ and Cr₂Se₃ grown by molecular beam epitaxy. In the monolayer CrSe₂, 1T-CrSe₂ with a lattice constant of 3.3 Å has a metallic character, coexisting with the 1T″ phase with 2 × 2 surface periodicity. Monolayer CrSe₂ can be transformed into Cr₂Se₃ with a lattice constant of 3.6 Å by annealing at 300 °C. X-ray magnetic circular dichroism (XMCD) measurements combined with DFT calculations reveal that while the MBE-grown monolayer CrSe₂ is antiferromagnetic, monolayer Cr₂Se₃ is ferromagnetic with a Curie temperature of ∼200 K. This work demonstrates the structural diversity in nonlayered chromium selenide and the critical effect of different structures on its electronic and magnetic properties.