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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Voss L, Gaida NA, Hansen AL, Etter M, Wolff N, Duppel V, Lotnyk A, Bensch W, Ebert H, Mankovsky S, Polesya S, Bhat S, Farla R, Hasegawa M, Sasaki T, Niwa K, Kienle L. Synthesis and in-depth structure determination of a novel metastable high-pressure CrTe 3 phase. J Appl Crystallogr 2024; 57:755-769. [PMID: 38846770 PMCID: PMC11151671 DOI: 10.1107/s1600576724002711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Accepted: 03/25/2024] [Indexed: 06/09/2024] Open
Abstract
This study reports the synthesis and crystal structure determination of a novel CrTe3 phase using various experimental and theoretical methods. The average stoichiometry and local phase separation of this quenched high-pressure phase were characterized by ex situ synchrotron powder X-ray diffraction and total scattering. Several structural models were obtained using simulated annealing, but all suffered from an imperfect Rietveld refinement, especially at higher diffraction angles. Finally, a novel stoichiometrically correct crystal structure model was proposed on the basis of electron diffraction data and refined against powder diffraction data using the Rietveld method. Scanning electron microscopy-energy-dispersive X-ray spectrometry (EDX) measurements verified the targeted 1:3 (Cr:Te) average stoichiometry for the starting compound and for the quenched high-pressure phase within experimental errors. Scanning transmission electron microscopy (STEM)-EDX was used to examine minute variations of the Cr-to-Te ratio at the nanoscale. Precession electron diffraction (PED) experiments were applied for the nanoscale structure analysis of the quenched high-pressure phase. The proposed monoclinic model from PED experiments provided an improved fit to the X-ray patterns, especially after introducing atomic anisotropic displacement parameters and partial occupancy of Cr atoms. Atomic resolution STEM and simulations were conducted to identify variations in the Cr-atom site-occupancy factor. No significant variations were observed experimentally for several zone axes. The magnetic properties of the novel CrTe3 phase were investigated through temperature- and field-dependent magnetization measurements. In order to understand these properties, auxiliary theoretical investigations have been performed by first-principles electronic structure calculations and Monte Carlo simulations. The obtained results allow the observed magnetization behavior to be interpreted as the consequence of competition between the applied magnetic field and the Cr-Cr exchange interactions, leading to a decrease of the magnetization towards T = 0 K typical for antiferromagnetic systems, as well as a field-induced enhanced magnetization around the critical temperature due to the high magnetic susceptibility in this region.
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Affiliation(s)
- Lennart Voss
- Department of Materials Science, Synthesis and Real Structure, Christian-Albrechts-University Kiel, Kaiserstrasse 2, Kiel, 24143, Germany
| | - Nico Alexander Gaida
- Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8601, Japan
| | - Anna-Lena Hansen
- Institute for Applied Materials – Energy Storage Systems (IAM-ESS), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, 76344, Germany
| | - Martin Etter
- Deutsche Elektronen-Synchrotron DESY, Notkestrasse 85, Hamburg, 22607, Germany
| | - Niklas Wolff
- Department of Materials Science, Synthesis and Real Structure, Christian-Albrechts-University Kiel, Kaiserstrasse 2, Kiel, 24143, Germany
- Kiel Nano, Surface and Interface Science KiNSIS, Kiel University, Christian-Albrechts-Platz 4, Kiel, 24118, Germany
| | - Viola Duppel
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, Stuttgart, 70569, Germany
| | - Andriy Lotnyk
- Leibniz Institute for Surface Modification (IOM), Permoserstrasse 15, Leipzig, 04318, Germany
| | - Wolfgang Bensch
- Institute of Inorganic Chemistry, Christian-Albrechts-University Kiel, Max-Eyth Strasse 2, Kiel, 24118, Germany
| | - Hubert Ebert
- Department Chemie, Physikalische Chemie, Universität München, Butenandtstrasse 5-13, München, D-81377, Germany
| | - Sergey Mankovsky
- Department Chemie, Physikalische Chemie, Universität München, Butenandtstrasse 5-13, München, D-81377, Germany
| | - Svitlana Polesya
- Department Chemie, Physikalische Chemie, Universität München, Butenandtstrasse 5-13, München, D-81377, Germany
| | - Shrikant Bhat
- Deutsche Elektronen-Synchrotron DESY, Notkestrasse 85, Hamburg, 22607, Germany
| | - Robert Farla
- Deutsche Elektronen-Synchrotron DESY, Notkestrasse 85, Hamburg, 22607, Germany
| | - Masashi Hasegawa
- Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8601, Japan
| | - Takuya Sasaki
- Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8601, Japan
| | - Ken Niwa
- Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8601, Japan
| | - Lorenz Kienle
- Department of Materials Science, Synthesis and Real Structure, Christian-Albrechts-University Kiel, Kaiserstrasse 2, Kiel, 24143, Germany
- Kiel Nano, Surface and Interface Science KiNSIS, Kiel University, Christian-Albrechts-Platz 4, Kiel, 24118, Germany
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Zhou X, Jiang T, Tao Y, Ji Y, Wang J, Lai T, Zhong D. Evidence of Ferromagnetism and Ultrafast Dynamics of Demagnetization in an Epitaxial FeCl 2 Monolayer. ACS NANO 2024; 18:10912-10920. [PMID: 38613502 DOI: 10.1021/acsnano.4c01436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/15/2024]
Abstract
The development of two-dimensional (2D) magnetism is driven not only by the interest of low-dimensional physics but also by potential applications in high-density miniaturized spintronic devices. However, 2D materials possessing a ferromagnetic order with a relatively high Curie temperature (Tc) are rare. In this paper, the evidence of ferromagnetism in monolayer FeCl2 on Au(111) surfaces, as well as the interlayer antiferromagnetic coupling of bilayer FeCl2, is characterized by using spin-polarized scanning tunneling microscopy. A Curie temperature (Tc) of ∼147 K is revealed for monolayer FeCl2, based on our static magneto-optical Kerr effect measurements. Furthermore, temperature-dependent magnetization dynamics is investigated by the time-resolved magneto-optical Kerr effect. A transition from one- to two-step demagnetization occurs as the lattice temperature approaches Tc, which supports the Elliott-Yafet spin relaxation mechanism. The findings contribute to a deeper understanding of the underlying mechanisms governing ultrafast magnetization in 2D ferromagnetic materials.
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Affiliation(s)
- Xuhan Zhou
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Guangzhou No. 89 Secondary School, Guangzhou 510520, China
| | - Tianran Jiang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Ye Tao
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yi Ji
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Jingying Wang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Tianshu Lai
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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Tang X, Zhou J, Wong NLM, Chai J, Liu Y, Wang S, Song X. Strain-Induced Ferromagnetism in Monolayer T″-Phase VTe 2: Unveiling Magnetic States and Anisotropy for Spintronics Advancement. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:704. [PMID: 38668198 PMCID: PMC11054831 DOI: 10.3390/nano14080704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 04/14/2024] [Accepted: 04/15/2024] [Indexed: 04/29/2024]
Abstract
Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the effects of the Hubbard U parameter, biaxial strain, and structural distortions on the magnetic characteristics of T″-phase VTe2. We demonstrate that setting the Hubbard U to 0 eV provides an accurate representation of the observed structural, magnetic, and electronic features for both bulk and monolayer T″-phase VTe2. The application of strain reveals two distinct ferromagnetic states in the monolayer T″-phase VTe2, each characterized by minor structural differences, but notably different magnetic moments. The T″-1 state, with reduced magnetic moments, emerges under compressive strain, while the T″-2 state, featuring increased magnetic moments, develops under tensile strain. Our analysis also compares the magnetic anisotropy between the T and T″ phases of VTe2, highlighting that the periodic lattice distortion in the T″-phase induces an in-plane anisotropy, which makes it a material with an easy-axis of magnetization. Monte Carlo simulations corroborate our findings, indicating a high Curie temperature of approximately 191 K for the T″-phase VTe2. Our research not only sheds light on the critical aspects of the VTe2 system but also suggests new pathways for enhancing low-dimensional magnetism, contributing to the advancement of spintronics and straintronics.
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Affiliation(s)
- Xiaoting Tang
- Department of Physics, College of Science, Shanghai University, 99 Shangda Road, Shanghai 200444, China;
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jun Zhou
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
| | - Nancy Lai Mun Wong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
| | - Jianwei Chai
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
| | - Yi Liu
- Department of Physics, College of Science, Shanghai University, 99 Shangda Road, Shanghai 200444, China;
- Materials Genome Institute (MGI), Shanghai University, 333 Nanchen Road, Shanghai 200444, China
| | - Shijie Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
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Matsuoka H, Kajihara S, Nomoto T, Wang Y, Hirayama M, Arita R, Iwasa Y, Nakano M. Band-driven switching of magnetism in a van der Waals magnetic semimetal. SCIENCE ADVANCES 2024; 10:eadk1415. [PMID: 38608018 PMCID: PMC11014443 DOI: 10.1126/sciadv.adk1415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 03/13/2024] [Indexed: 04/14/2024]
Abstract
Magnetic semimetals form an attractive class of materials because of the nontrivial contributions of itinerant electrons to magnetism. Because of their relatively low-carrier-density nature, a doping level of those materials could be largely tuned by a gating technique. Here, we demonstrate gate-tunable ferromagnetism in an emergent van der Waals magnetic semimetal Cr3Te4 based on an ion-gating technique. Upon doping electrons into the system, the Curie temperature (TC) sharply increases, approaching near to room temperature, and then decreases to some extent. This non-monotonous variation of TC accompanies the switching of the magnetic anisotropy, synchronously followed by the sign changes of the ordinary and anomalous Hall effects. Those results clearly elucidate that the magnetism in Cr3Te4 should be governed by its semimetallic band nature.
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Affiliation(s)
- Hideki Matsuoka
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Shun Kajihara
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Takuya Nomoto
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo 153-8904, Japan
| | - Yue Wang
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Motoaki Hirayama
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Ryotaro Arita
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo 153-8904, Japan
| | - Yoshihiro Iwasa
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Masaki Nakano
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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Cui F, He K, Wu S, Zhang H, Lu Y, Li Z, Hu J, Pan S, Zhu L, Huan Y, Li B, Duan X, Ji Q, Zhao X, Zhang Y. Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides. ACS NANO 2024; 18:6276-6285. [PMID: 38354364 DOI: 10.1021/acsnano.3c10609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.
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Affiliation(s)
- Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Kun He
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Hongmei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Zhenzhu Li
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies and School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
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8
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Zhao R, Gao T, Li Y, Sun Z, Zhang Z, Ji L, Hu C, Liu X, Zhang Z, Zhang X, Qin G. Highly anisotropic Fe 3C microflakes constructed by solid-state phase transformation for efficient microwave absorption. Nat Commun 2024; 15:1497. [PMID: 38374257 PMCID: PMC10876570 DOI: 10.1038/s41467-024-45815-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Accepted: 01/30/2024] [Indexed: 02/21/2024] Open
Abstract
Soft magnetic materials with flake geometry can provide shape anisotropy for breaking the Snoek limit, which is promising for achieving high-frequency ferromagnetic resonances and microwave absorption properties. Here, two-dimensional (2D) Fe3C microflakes with crystal orientation are obtained by solid-state phase transformation assisted by electrochemical dealloying. The shape anisotropy can be further regulated by manipulating the thickness of 2D Fe3C microflakes under different isothermally quenching temperatures. Thus, the resonant frequency is adjusted effectively from 9.47 and 11.56 GHz under isothermal quenching from 700 °C to 550 °C. The imaginary part of the complex permeability can reach 0.9 at 11.56 GHz, and the minimum reflection loss (RLmin) is -52.09 dB (15.85 GHz, 2.90 mm) with an effective absorption bandwidth (EAB≤-10 dB) of 2.55 GHz. This study provides insight into the preparation of high-frequency magnetic loss materials for obtaining high-performance microwave absorbers and achieves the preparation of functional materials from traditional structural materials.
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Affiliation(s)
- Rongzhi Zhao
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
| | - Tong Gao
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
| | - Yixing Li
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China.
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China.
| | - Zhuo Sun
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
| | - Zhengyu Zhang
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
| | - Lianze Ji
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China
| | - Chenglong Hu
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China
| | - Xiaolian Liu
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China
| | - Zhenhua Zhang
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China
| | - Xuefeng Zhang
- Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310012, China.
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China.
| | - Gaowu Qin
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
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Jiang Q, Yang H, Xue W, Yang R, Shen J, Zhang X, Li RW, Xu X. Controlled Growth of Submillimeter-Scale Cr 5Te 8 Nanosheets and the Domain Wall Nucleation Governed Magnetization Reversal Process. NANO LETTERS 2024; 24:1246-1253. [PMID: 38198620 DOI: 10.1021/acs.nanolett.3c04200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) ferromagnets have attracted widespread attention for promising applications in compact spintronic devices. However, the controlled synthesis of high-quality, large-sized, and ultrathin 2D magnets via facile, economical method remains challenging. Herein, we develop a hydrogen-tailored chemical vapor deposition approach to fabricating 2D Cr5Te8 ferromagnetic nanosheets. Interestingly, the time period of introducing hydrogen was found to be crucial for controlling the lateral size, and a Cr5Te8 single-crystalline nanosheet of lateral size up to ∼360 μm with single-unit-cell thickness has been obtained. These samples exhibit a leading role of domain wall nucleation in governing the magnetization reversal process, providing important references for optimizing the performances of associated devices. The nanosheets also show notable magnetotransport response, including nonmonotonous magnetic-field-dependent magnetoresistance and sizable anomalous Hall resistivity, demonstrating Cr5Te8 as a promising material for constructing high-performance magnetoelectronic devices. This study presents a breakthrough of large-sized CVD-grown 2D magnetic materials, which is indispensable for constructing 2D spintronic devices.
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Affiliation(s)
- Qitao Jiang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Huali Yang
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Wuhong Xue
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Ruilong Yang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Jianlei Shen
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Xueying Zhang
- Zhongfa Aviation Institute, Beihang University, Hangzhou 311115, China
| | - Run-Wei Li
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
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10
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Jia C, Jin C, Shi P, Su J, Zhang Y, Niu X, Wang B. Toward intrinsic ultra-high-temperature ferromagnetism in a CrAuTe 2/graphene heterosystem. Phys Chem Chem Phys 2024; 26:2134-2139. [PMID: 38131398 DOI: 10.1039/d3cp02155f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Exploring intrinsic two-dimensional (2D) ferromagnetic (FM) materials with high Curie temperatures (TC) and large magnetic anisotropy energies (MAE) is one of the effective solutions to develop materials for high-performance spintronic applications. Using density functional theory calculations and high-throughput computations, we predict an intrinsic bimetallic FM monolayer, CrAuTe2, which has a large MAE and high TC. The results show that the value of the MAE can reach about 1.5 meV per Cr, and Monte Carlo simulations show that the TC of monolayer CrAuTe2 is about 840 K. Further analysis indicates that the joint effects of spin-orbit coupling (SOC) interaction and magnetic dipole-dipole interaction result in high in-plane magnetic anisotropy. In addition, this monolayer has good dynamic, thermal, and mechanical stabilities, which were confirmed by ab initio molecular dynamics simulations, phonon spectra, and elastic constants, respectively. In order to propose a practical synthesis approach, we built a CrAuTe2/graphene van der Waals heterostructure, and found that the heterostructure does not affect the magnetic properties of monolayer CrAuTe2. These findings appear promising for the future applications in nano-spintronics.
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Affiliation(s)
- Chaobin Jia
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Chao Jin
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Puyuan Shi
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Jingjuan Su
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Yungeng Zhang
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Xianghong Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Bing Wang
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
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11
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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12
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Zhang S, Huo S, Song X, Zhang X. Surface Stability and Exfoliability of Non-van der Waals Magnetic Chromium Tellurides. J Phys Chem Lett 2023; 14:10609-10616. [PMID: 37982382 DOI: 10.1021/acs.jpclett.3c02439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
Exfoliation of two-dimensional (2D) magnetic materials from non-van der Waals (non-vdW) materials has attracted increasing attention because it provides a great platform for the construction of 2D magnetic materials. For non-vdW magnetic chromium tellurides with high Curie temperatures, their few-layer samples show promising applications in the field of spintronics. However, there is still no consensus on whether the surface structures of few-layer chromium tellurides should be terminated by Cr or Te atoms. By calculating the surface and exfoliation energy, we find that which structure is more stable depends greatly on the value of the chemical potential of Te atoms, and the few-layer sample with a Cr-terminated surface is easier to exfoliate than that with both Te-terminated surfaces. Finally, we propose that different exfoliated structures can be identified by using the atomic number ratio of Cr to Te and the average magnetic moment of Cr atoms in few-layer samples.
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Affiliation(s)
- Shuqing Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Sitong Huo
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Xiaoyan Song
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing 100124, China
| | - Xinping Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, China
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13
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Fan Z, Liu Y, Wei X, Zhu W, Huang H, Shao Q, Liao F, Shao M, Li W, Mu G, Liu Y, Kang Z. Emergent Intrinsic Ferromagnetism in Two-Dimensional Trigonal Rhodium Oxide. NANO LETTERS 2023; 23:9515-9521. [PMID: 37830516 DOI: 10.1021/acs.nanolett.3c03087] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Two-dimensional (2D) van der Waals single crystals with long-range magnetic order are the precondition and urgent task for developing a 2D spintronics device. In contrast to graphene and transition metal dichalcogenides, the study of 2D single-crystal metal oxides with intrinsic ferromagnetic properties remains a huge challenge. Here, we report a large-size trigonal single-crystal rhodium oxide (SC-Tri-RhO2), with crystal parameters of a = b = 3.074 Å, c = 6.116 Å, and a space group of P3̅m1 (164), exhibiting strong ferromagnetism (FM) at a rather high temperature. Furthermore, theoretical calculations suggest that the ferromagnetism in SC-Tri-RhO2 originates from spin splitting near the Fermi level, and the total magnetic moment is contributed mainly by the Rh atom.
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Affiliation(s)
- Zhenglong Fan
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Yixin Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xinyuan Wei
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wenxiang Zhu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Hui Huang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Qi Shao
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, Jiangsu, China
| | - Fan Liao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Mingwang Shao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Gang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yang Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Zhenhui Kang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa 999078, Macao, China
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14
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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15
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Chi H, Ou Y, Eldred TB, Gao W, Kwon S, Murray J, Dreyer M, Butera RE, Foucher AC, Ambaye H, Keum J, Greenberg AT, Liu Y, Neupane MR, de Coster GJ, Vail OA, Taylor PJ, Folkes PA, Rong C, Yin G, Lake RK, Ross FM, Lauter V, Heiman D, Moodera JS. Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride. Nat Commun 2023; 14:3222. [PMID: 37270579 DOI: 10.1038/s41467-023-38995-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 05/24/2023] [Indexed: 06/05/2023] Open
Abstract
Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.
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Affiliation(s)
- Hang Chi
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA.
| | - Yunbo Ou
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Tim B Eldred
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Wenpei Gao
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Sohee Kwon
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Joseph Murray
- Department of Physics, University of Maryland, College Park, MD, 20742, USA
| | - Michael Dreyer
- Department of Physics, University of Maryland, College Park, MD, 20742, USA
| | - Robert E Butera
- Laboratory for Physical Sciences, College Park, MD, 20740, USA
| | - Alexandre C Foucher
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Haile Ambaye
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Jong Keum
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Center for Nanophase Materials Sciences, Physical Science Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | | | - Yuhang Liu
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | | | - Owen A Vail
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA
| | | | | | - Charles Rong
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA
| | - Gen Yin
- Department of Physics, Georgetown University, Washington, DC, 20057, USA
| | - Roger K Lake
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Valeria Lauter
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Don Heiman
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Physics, Northeastern University, Boston, MA, 02115, USA
| | - Jagadeesh S Moodera
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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16
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Fujisawa Y, Pardo-Almanza M, Hsu CH, Mohamed A, Yamagami K, Krishnadas A, Chang G, Chuang FC, Khoo KH, Zang J, Soumyanarayanan A, Okada Y. Widely Tunable Berry Curvature in the Magnetic Semimetal Cr 1+ δ Te 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207121. [PMID: 36642840 DOI: 10.1002/adma.202207121] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Cr1+ δ Te2 is a self-intercalated magnetic transition metal dichalcogenide (TMD), which exhibits topological magnetism and tunable electron filling. While recent studies have explored real-space Berry curvature effects, similar considerations of momentum-space Berry curvature are lacking. Here, the electronic structure and transport properties of epitaxial Cr1+ δ Te2 thin films are systematically investigated over a range of doping, δ (0.33 - 0.71). Spectroscopic experiments reveal the presence of a characteristic semi-metallic band region, which shows a rigid like energy shift with δ. Transport experiments show that the intrinsic component of the anomalous Hall effect (AHE) is sizable and undergoes a sign flip across δ. Finally, density functional theory calculations establish a link between the doping evolution of the band structure and AHE: the AHE sign flip is shown to emerge from the sign change of the Berry curvature, as the semi-metallic band region crosses the Fermi energy. These findings underscore the increasing relevance of momentum-space Berry curvature in magnetic TMDs and provide a unique platform for intertwining topological physics in real and momentum spaces.
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Affiliation(s)
- Yuita Fujisawa
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Markel Pardo-Almanza
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Chia-Hsiu Hsu
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
- Department of Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Atwa Mohamed
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Kohei Yamagami
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Anjana Krishnadas
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
| | - Khoong Hong Khoo
- Institute of High Performance Computing, Agency for Science Technology and Research, Singapore, 138632, Singapore
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH 03824, USA
- Materials Science Program, University of New Hampshire, Durham, NH 03824, USA
| | - Anjan Soumyanarayanan
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
- Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore, 138634, Singapore
| | - Yoshinori Okada
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
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17
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Wang X, Zhou H, Bai L, Wang HQ. Growth, structure, and morphology of van der Waals epitaxy Cr 1+δTe 2 films. NANOSCALE RESEARCH LETTERS 2023; 18:23. [PMID: 36826603 DOI: 10.1186/s11671-023-03791-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Accepted: 02/07/2023] [Indexed: 05/24/2023]
Abstract
The preparation of two-dimensional magnetic materials is a key process to their applications and the study of their structure and morphology plays an important role in the growth of high-quality thin films. Here, the growth, structure, and morphology of Cr1+δTe2 films grown by molecular beam epitaxy on mica with variations of Te/Cr flux ratio, growth temperature, and film thickness have been systematically investigated by scanning tunneling microscopy, reflection high-energy electron diffraction, scanning electron microscope, and X-ray photoelectron spectroscopy. We find that a structural change from multiple phases to a single phase occurs with the increase in growth temperature, irrespective of the Cr/Te flux ratios, which is attributed to the desorption difference of Te atoms at different temperatures, and that the surface morphology of the films grown at relatively high growth temperatures (≥ 300 °C) exhibits a quasi-hexagonal mesh-like structure, which consists of nano-islands with bending surface induced by the screw dislocations, as well as that the films would undergo a growth-mode change from 2D at the initial stage in a small film thickness (2 nm) to 3D at the later stage in thick thicknesses (12 nm and 24 nm). This work provides a general model for the study of pseudo-layered materials grown on flexible layered substrates.
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Affiliation(s)
- Xiaodan Wang
- Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China
- School of Physics, Shandong University, Jinan, 250100, People's Republic of China
| | - Hua Zhou
- School of Physics, Shandong University, Jinan, 250100, People's Republic of China.
| | - Lihui Bai
- School of Physics, Shandong University, Jinan, 250100, People's Republic of China
| | - Hui-Qiong Wang
- Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.
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18
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Yang J, Gao B, Liu W, Du J, Xu Q. Supercritical CO 2 -induced New Chemical Bond of C-O-Si in Graphdiyne to Achieve Robust Room-Temperature Ferromagnetism. Chemphyschem 2023; 24:e202200793. [PMID: 36806422 DOI: 10.1002/cphc.202200793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 02/09/2023] [Accepted: 02/13/2023] [Indexed: 02/21/2023]
Abstract
The realization of ferromagnetic ordering of two-dimensional (2D) carbon material graphdiyne (GDY) has attracted great attention due to its promising application in spin semiconductor devices. However, the absence of localized spins makes the pristine GDY intrinsically nonferromagnetic. Herein, we report the realization of robust room-temperature (RT) ferromagnetism (FM) with Curie temperature (TC ) up to 325 K for GDY Nanosheets (GDYNs) by supercritical CO2 (SC CO2 ). Experimental and theoretical calculations reveal that the new chemical bond of C-O-Si can be formed because of the unique effect of SC CO2 , which help to enhance the charge transfer and generates long-range ferromagnetic order. The RT saturation magnetization (MS ) reaches 1.125 emu/g, which is much higher than that of carbon-based materials reported up to now. Meanwhile, by changing the conditions of SC CO2 such as pressure, ferromagnetic responses can be manipulated, which is great for potential spintronics applications of GDY.
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Affiliation(s)
- Jian Yang
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Bo Gao
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Wei Liu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Jiang Du
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Qun Xu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China.,College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
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19
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Yang H, Wu A, Yi H, Cao W, Yao J, Yang G, Zou YC. Atomic scale insights into the epitaxial growth mechanism of 2D Cr 3Te 4 on mica. NANOSCALE ADVANCES 2023; 5:693-700. [PMID: 36756523 PMCID: PMC9890546 DOI: 10.1039/d2na00835a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 12/08/2022] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) magnetic materials are of wide research interest owing to their promising applications in spintronic devices. Among them, chromium chalcogenide compounds are some of the limited available systems that present both high stability in air and high Curie temperatures. Epitaxial growth techniques based on chemical vapour deposition (CVD) have been demonstrated to be a robust method for growing 2D non-layered chromium chalcogenides. However, the growth mechanism is not well-understood. Here, we demonstrate the epitaxial growth of Cr3Te4 nanoplates with high quality on mica. Atomic-resolution scanning transmission electron microscopy (STEM) imaging reveals that the epitaxial growth is based on nanosized chromium oxide seed particles at the interface of Cr3Te4 and mica. The chromium oxide nanoparticle exhibits a coherent interface with both mica and Cr3Te4 with a lattice mismatch within 3%, suggesting that, as a buffer layer, chromium oxide can release the interfacial strain, and induce the growth of Cr3Te4 although there is a distinct oxygen-content difference between mica and Cr3Te4. This work provides an experimental understanding behind the epitaxial growth of 2D magnetic materials at the atomic scale and facilitates the improvement of their growth procedures for devices with high crystalline quality.
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Affiliation(s)
- Hailin Yang
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - An Wu
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Huaxin Yi
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Weiwei Cao
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Jiandong Yao
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Guowei Yang
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Yi-Chao Zou
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
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20
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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21
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Zhang C, Liu C, Zhang J, Yuan Y, Wen Y, Li Y, Zheng D, Zhang Q, Hou Z, Yin G, Liu K, Peng Y, Zhang XX. Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205967. [PMID: 36245330 DOI: 10.1002/adma.202205967] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Revised: 10/06/2022] [Indexed: 06/16/2023]
Abstract
Room-temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano-spintronic devices. However, such skyrmion-hosting materials are rare in nature. In this study, a self-intercalated transition metal dichalcogenide Cr1+ x Te2 with a layered crystal structure that hosts room-temperature skyrmions and exhibits large THE is reported. By tuning the self-intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out-of-plane to the in-plane configuration are achieved. Based on the intercalation engineering, room-temperature skyrmions are successfully created in Cr1.53 Te2 with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion-induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.
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Affiliation(s)
- Chenhui Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Junwei Zhang
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Youyou Yuan
- Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Qiang Zhang
- Core Technology Platforms, New York University Abu Dhabi, Abu Dhabi, 129188, United Arab Emirates
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Gen Yin
- Physics Department, Georgetown University, Washington, DC, 20057, USA
| | - Kai Liu
- Physics Department, Georgetown University, Washington, DC, 20057, USA
| | - Yong Peng
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Xi-Xiang Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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22
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Huan Y, Luo T, Han X, Ge J, Cui F, Zhu L, Hu J, Zheng F, Zhao X, Wang L, Wang J, Zhang Y. Composition-Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe 5 Se 8 to Metallic Fe 3 Se 4 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207276. [PMID: 36263871 DOI: 10.1002/adma.202207276] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr2 S3 , Cr5 Te8 ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe5 Se8 and 50% Fe-intercalated monoclinic Fe3 Se4 ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe5 Se8 exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe2 to non-layered Fe-intercalated Fe5 Se8 based on density functional theory calculations. In contrast, the ultrathin Fe3 Se4 presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.
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Affiliation(s)
- Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Tiantian Luo
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
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23
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Wang Y, Kajihara S, Matsuoka H, Saika BK, Yamagami K, Takeda Y, Wadati H, Ishizaka K, Iwasa Y, Nakano M. Layer-Number-Independent Two-Dimensional Ferromagnetism in Cr 3Te 4. NANO LETTERS 2022; 22:9964-9971. [PMID: 36516275 DOI: 10.1021/acs.nanolett.2c03532] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In a conventional magnetic material, a long-range magnetic order develops in three dimensions, and reducing a layer number weakens its magnetism. Here we demonstrate anomalous layer-number-independent ferromagnetism down to the two-dimensional (2D) limit in a metastable phase of Cr3Te4. We fabricated Cr3Te4 thin films by molecular-beam epitaxy and found that Cr3Te4 could host two distinct ferromagnetic phases characterized with different Curie temperatures (TC). One is the bulk-like "high-TC phase" showing room-temperature ferromagnetism, which is consistent with previous studies. The other is the metastable "low-TC phase" with TC ≈ 160 K, which exhibits a layer-number-independent TC down to the 2D limit in marked contrast with the conventional high-TC phase, demonstrating a purely 2D nature of its ferromagnetism. Such significant differences between two distinct phases could be attributed to a small variation in the doping level, making this material attractive for future ultracompact spintronics applications with potential gate-tunable room-temperature 2D ferromagnetism.
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Affiliation(s)
- Yue Wang
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Shun Kajihara
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Hideki Matsuoka
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Bruno Kenichi Saika
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Kohei Yamagami
- Okinawa Institute of Science and Technology Graduate University, Onna, Okinawa 904-0495, Japan
| | - Yukiharu Takeda
- Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan
| | - Hiroki Wadati
- Graduate School of Material Science, University of Hyogo, Kobe, Hyogo 678-1297, Japan
| | - Kyoko Ishizaka
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Masaki Nakano
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
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24
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Li C, Liu K, Jiang D, Jin C, Pei T, Wen T, Yue B, Wang Y. Diverse Thermal Expansion Behaviors in Ferromagnetic Cr 1-δTe with NiAs-Type, Defective Structures. Inorg Chem 2022; 61:14641-14647. [PMID: 36067515 DOI: 10.1021/acs.inorgchem.2c01826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Negative thermal expansion (NTE) and zero thermal expansion (ZTE) properties are of great significance for the long-life stable operation of precision equipment. However, there are still existing challenges in finding new materials that exhibit NTE or ZTE over a wide temperature range. Here, we report negative, zero, and positive thermal expansion in NiAs-type, defective Cr1-δTe, containing three compounds: hexagonal CrTe, monoclinic Cr3Te4, and trigonal Cr5Te8. CrTe shows the NTE behavior from 280 to 340 K with the volume coefficient of thermal expansion αV = -27.6 × 10-6 K-1. Cr3Te4 shows the ZTE behavior over a wide temperature range of 180-320 K (αV = 0.16 × 10-6 K-1). And Cr5Te8 holds the PTE behavior over the whole temperature range (αV = 38.5 × 10-6 K-1). All of the samples show obvious anisotropic thermal expansion on heating. Combined with the magnetic measurements, it can be confirmed that the NTE and ZTE properties in ferromagnetic Cr1-δTe originate from the magnetovolume effect (MVE). Such NiAs-type, defective compounds with similar compositions but different structures provide a new perspective for tuning the NTE properties of materials and searching for new materials with ZTE over a wide temperature range.
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Affiliation(s)
- Chen Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China
| | - Ke Liu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China
| | - Dequan Jiang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China
| | - Cheng Jin
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China
| | - Tianyao Pei
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China
| | - Ting Wen
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China
| | - Binbin Yue
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China
| | - Yonggang Wang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100193, China.,School of Materials Science and Engineering, Peking University, Beijing 100871, China
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25
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Zhou X, Wang Z, Zhu H, Liu Z, Hou Y, Guo D, Zhong D. Epitaxial growth and electronic properties of an antiferromagnetic semiconducting VI 2 monolayer. NANOSCALE 2022; 14:10559-10565. [PMID: 35833619 DOI: 10.1039/d2nr02367a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The van der Waals materials down to the monolayer (ML) limit provide a fertile platform for exploring low-dimensional magnetism and developing the novel applications of spintronics. Among them, due to the absence of the net magnetic moment, antiferromagnetic (AFM) materials have received much less attention than ferromagnetic ones. Here, by combining scanning tunneling microscopy and state-of-the-art first-principles calculations, we investigate the preparation, and electronic and magnetic properties of a vanadium(II) iodide (VI2) ML. Single-layer VI2 has been grown by molecular beam epitaxy on Au(111) surfaces. A band gap of 2.8 eV is revealed, indicating the semiconducting nature of the VI2 ML. Vanadium and iodine vacancy defects give rise to additional feature states within the bandgap. A typical 120° AFM spin ordering is maintained in the ML limit of VI2, as revealed by the first-principles calculations. Besides, the AFM coupling is greatly enhanced by slightly decreasing lattice constants. Our work provides an ideal platform for further studying two-dimensional magnetism with non-collinear AFM ordering and for investigating the possibility of realizing the spin Hall effect in the ML limit.
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Affiliation(s)
- Xuhan Zhou
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Zhe Wang
- State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, China
| | - Han Zhu
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Zizhao Liu
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Yusheng Hou
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Donghui Guo
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
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26
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Pan S, Hong M, Zhu L, Quan W, Zhang Z, Huan Y, Yang P, Cui F, Zhou F, Hu J, Zheng F, Zhang Y. On-Site Synthesis and Characterizations of Atomically-Thin Nickel Tellurides with Versatile Stoichiometric Phases through Self-Intercalation. ACS NANO 2022; 16:11444-11454. [PMID: 35786839 DOI: 10.1021/acsnano.2c05570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe2, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe2 and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe2 to self-intercalated Ni3Te4 and Ni5Te6. The synthesis of Ni self-intercalated NixTey compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe2 intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.
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Affiliation(s)
- Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Min Hong
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wenzhi Quan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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27
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Jeon JH, Na HR, Kim H, Lee S, Song S, Kim J, Park S, Kim J, Noh H, Kim G, Jerng SK, Chun SH. Emergent Topological Hall Effect from Exchange Coupling in Ferromagnetic Cr 2Te 3/Noncoplanar Antiferromagnetic Cr 2Se 3 Bilayers. ACS NANO 2022; 16:8974-8982. [PMID: 35621270 DOI: 10.1021/acsnano.2c00025] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The topological Hall effect has been observed in magnetic materials of complex spin structures or bilayers of trivial magnets and strong spin-orbit-coupled systems. In view of current attention on dissipationless topological electronics, the occurrence of the topological Hall effect in new systems or by an unexpected mechanism is fascinating. Here, we report a robust topological Hall effect generated in bilayers of a ferromagnet and a noncoplanar antiferromagnet, from the interfacial Dzyaloshinskii-Moriya interaction due to the exchange coupling of magnetic layers. Molecular beam epitaxy has been utilized to fabricate heterostructures of a ferromagnetic metal Cr2Te3 and a noncoplanar antiferromagnet Cr2Se3. A significant topological Hall effect at low temperature implies the development of nontrivial spin chirality, and density functional theory calculations explain the correlation of the Dzyaloshinskii-Moriya interaction increase and inversion symmetry breaking at the interface. The presence of noncoplanar ordering in the antiferromagnet plays a pivotal role in producing the topological Hall effect. Our results suggest that the exchange coupling in ferromagnet/noncoplanar antiferromagnet bilayers could be an alternative mechanism toward topologically protected magnetic structures.
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Affiliation(s)
- Jae Ho Jeon
- Department of Physics, Sejong University, Seoul 05006, Korea
| | - Hong Ryeol Na
- Department of Physics, Sejong University, Seoul 05006, Korea
| | - Heeju Kim
- Department of Physics and HMC, Sejong University, Seoul 05006, Korea
| | - Sunghun Lee
- Department of Physics, Sejong University, Seoul 05006, Korea
| | - Sehwan Song
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jiwoong Kim
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jeong Kim
- Department of Electrical Engineering, Sejong University, Seoul 05006, Korea
| | - Hwayong Noh
- Department of Physics, Sejong University, Seoul 05006, Korea
| | - Gunn Kim
- Department of Physics and HMC, Sejong University, Seoul 05006, Korea
| | | | - Seung-Hyun Chun
- Department of Physics, Sejong University, Seoul 05006, Korea
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28
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Yao J, Wang H, Yuan B, Hu Z, Wu C, Zhao A. Ultrathin Van der Waals Antiferromagnet CrTe 3 for Fabrication of In-Plane CrTe 3 /CrTe 2 Monolayer Magnetic Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200236. [PMID: 35419894 DOI: 10.1002/adma.202200236] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 04/09/2022] [Indexed: 06/14/2023]
Abstract
Ultrathin van der Waals (vdW) magnets are heavily pursued for potential applications in developing high-density miniaturized electronic/spintronic devices as well as for topological physics in low-dimensional structures. Despite the rapid advances in ultrathin ferromagnetic vdW magnets, the antiferromagnetic counterparts, as well as the antiferromagnetic junctions, are much less studied owing to the difficulties in both material fabrication and magnetism characterization. Ultrathin CrTe3 layers have been theoretically proposed to be a vdW antiferromagnetic semiconductor with intrinsic intralayer antiferromagnetism. Herein, the epitaxial growth of monolayer (ML) and bilayer CrTe3 on graphite surface is demonstrated. The structure, electronic and magnetic properties of the ML CrTe3 are characterized by combining scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy and confirmed by density functional theory calculations. The CrTe3 MLs can be further utilized for the fabrication of a lateral heterojunction consisting of ML CrTe2 and ML CrTe3 with an atomically sharp and seamless interface. Since ML CrTe2 is a metallic vdW magnet, such a heterostructure presents the first in-plane magnetic metal-semiconductor heterojunction made of two vdW materials. The successful fabrication of ultrathin antiferromagnetic CrTe3 , as well as the magnetic heterojunction, will stimulate the development of miniaturized antiferromagnetic spintronic devices based on vdW materials.
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Affiliation(s)
- Jie Yao
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Han Wang
- School of Physics, Nankai University, Tianjin, 300071, China
| | - Bingkai Yuan
- School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, 230026, China
| | - Zhenpeng Hu
- School of Physics, Nankai University, Tianjin, 300071, China
| | - Changzheng Wu
- School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, 230026, China
| | - Aidi Zhao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
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Abstract
The discovery of chiral-induced spin selectivity (CISS) opens up the possibility to manipulate spin orientation without external magnetic fields and enables new spintronic device designs1-4. Although many approaches have been explored for introducing CISS into solid-state materials and devices, the resulting systems so far are often plagued by high inhomogeneity, low spin selectivity or limited stability, and have difficulties in forming robust spintronic devices5-8. Here we report a new class of chiral molecular intercalation superlattices (CMIS) as a robust solid-state chiral material platform for exploring CISS. The CMIS were prepared by intercalating layered two-dimensional atomic crystals (2DACs) (such as TaS2 and TiS2) with selected chiral molecules (such as R-α-methylbenzylamine and S-α-methylbenzylamine). The X-ray diffraction and transmission electron microscopy studies demonstrate highly ordered superlattice structures with alternating crystalline atomic layers and self-assembled chiral molecular layers. Circular dichroism studies show clear chirality-dependent signals between right-handed (R-) and left-handed (S-) CMIS. Furthermore, by using the resulting CMIS as the spin-filtering layer, we create spin-selective tunnelling junctions with a distinct chirality-dependent tunnelling current, achieving a tunnelling magnetoresistance ratio of more than 300 per cent and a spin polarization ratio of more than 60 per cent. With a large family of 2DACs of widely tunable electronic properties and a vast selection of chiral molecules of designable structural motifs, the CMIS define a rich family of artificial chiral materials for investigating the CISS effect and capturing its potential for new spintronic devices.
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30
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Deng J, Zhou Z, Chen J, Cheng Z, Liu J, Wang Z. Vanadium-Doped Molybdenum Diselenide Atomic Layers with Room-Temperature Ferromagnetism. Chemphyschem 2022; 23:e202200162. [PMID: 35593048 DOI: 10.1002/cphc.202200162] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2022] [Revised: 05/19/2022] [Indexed: 11/05/2022]
Abstract
Two-dimensional diluted magnetic semiconductors with high Curie temperature are highly sought after because of their potential applications in spintronics. Development of new techniques for preparation of high quanlity diluted magnetic semiconductors is critical for their applications. In this study, vanadium-doped molybdenum selenide, a new diluted magnetic semiconductor, was synthesized by a single-step chemical vapor deposition method. The merit of this method is that the molybdenum and vanadium precursors can be supplied to the growth substrate uniformly. Photoluminescence measurements reveal that the band gap of MoSe 2 decreases after doping, which can be attributed to the formation of impurity energy band caused by p-type doping at the valence band maximum. Thus, the V-doped MoSe 2 still maintains the semiconducting characteristics. Vibrating sample magnetometer studies clearly show the ferromagnetism of V-doped MoSe 2 at room temperature. DFT calculations illustrates the joint contribution of V dopants and nearby atoms to the magnetic moments. This study provides future prospects for the multifunctional application of two-dimensional materials.
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Affiliation(s)
- Jianjun Deng
- Renmin University of China, Department of Chemistry, CHINA
| | - Zhonghao Zhou
- Renmin University of China, Department of Chemistry, CHINA
| | - Jinglong Chen
- Renmin University of China, Department of Chemistry, CHINA
| | - Zhihai Cheng
- Renmin University of China, Department of Physics, CHINA
| | - Jia Liu
- China Electronics Technology Group Corporation 38th Research Institute, No. 24, CHINA
| | - Zhiyong Wang
- Renmin University of China, Department of Chemistry, Zhongguancun Street, 100872, Beijing, CHINA
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31
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Li R, Nie JH, Xian JJ, Zhou JW, Lu Y, Miao MP, Zhang WH, Fu YS. Planar Heterojunction of Ultrathin CrTe 3 and CrTe 2 van der Waals Magnet. ACS NANO 2022; 16:4348-4356. [PMID: 35191675 DOI: 10.1021/acsnano.1c10555] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The fabrication of planar heterojunctions with magnetic van der Waals ultrathin crystals is essential for constructing miniaturized spintronic devices but is yet to be realized. Here, we report the growth of CrTe3 and CrTe2 ultrathin films with molecular beam epitaxy and characterize their morphological and electronic structure through low-temperature scanning tunneling microscopy/spectroscopy. The former is identified as a Mott insulator, and the latter has shown a robust magnetic order previously. Through vacuum annealing, CrTe3 can be transformed into CrTe2, whose relative ratio is controlled via the annealing time. This renders the feasibility of constructing CrTe3-CrTe2 planar heterojunctions, which express atomically sharp interfaces and smooth band bending. We also identified a superstructure conceivably formed via hybrid units of CrTe3 and CrTe2, whose electronic structure exhibits stunning tunability with the length of the superstructure. Our study sets a foundation for the development of magnetic tunneling junctions for building spintronic circuits and engineering electronic states in artificial superlattice structures.
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Affiliation(s)
- Rui Li
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jin-Hua Nie
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jing-Jing Xian
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jian-Wang Zhou
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
- Department of Physics, Nanchang University, Nanchang 330031, China
| | - Yan Lu
- Department of Physics, Nanchang University, Nanchang 330031, China
| | - Mao-Peng Miao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wen-Hao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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32
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Guo Y, Zhang Y, Lu S, Zhang X, Zhou Q, Yuan S, Wang J. Coexistence of Semiconducting Ferromagnetics and Piezoelectrics down 2D Limit from Non van der Waals Antiferromagnetic LiNbO 3-Type FeTiO 3. J Phys Chem Lett 2022; 13:1991-1999. [PMID: 35188784 DOI: 10.1021/acs.jpclett.2c00091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Stable two-dimensional (2D) ferromagnetic semiconductors (FMSs) with multifunctional properties have attracted extensive attention in device applications. Non van der Waals (vdW) transition-metal oxides with excellent environmental stability, if ferromagnetic (FM), may open up an unconventional and promising avenue for this subject, but they are usually antiferromagnetic or ferrimagnetic. Herein, we predict an FMS, monolayer Fe2Ti2O9, which can be obtained from LiNbO3-type FeTiO3 antiferromagnetic bulk, has a moderate band gap of 0.87 eV, large perpendicular magnetization (6 μB/fu) and a Curie temperature up to 110 K. The intriguing magnetic properties are derived from the double exchange and negative charge transfer between O_p orbitals and Fe_d orbitals. In addition, a large in-plane piezoelectric (PE) coefficient d11 of 5.0 pm/V is observed. This work offers a competitive candidate for multifunctional spintronics and may stimulate further experimental exploration of 2D non-vdW magnets.
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Affiliation(s)
- Yilv Guo
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yehui Zhang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shuaihua Lu
- School of Physics, Southeast University, Nanjing 211189, China
| | - Xiwen Zhang
- School of Mechanism Engineering & School of Physics, Southeast University, Nanjing 211189, China
| | - Qionghua Zhou
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shijun Yuan
- School of Physics, Southeast University, Nanjing 211189, China
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
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33
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Tsai Y, Li Z, Hu S. Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:661. [PMID: 35214988 PMCID: PMC8880290 DOI: 10.3390/nano12040661] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Revised: 02/10/2022] [Accepted: 02/13/2022] [Indexed: 12/16/2022]
Abstract
The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.
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Affiliation(s)
| | | | - Shaojie Hu
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (Y.T.); (Z.L.)
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34
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Zhang S, Wu H, Yang L, Zhang G, Xie Y, Zhang L, Zhang W, Chang H. Two-dimensional magnetic atomic crystals. MATERIALS HORIZONS 2022; 9:559-576. [PMID: 34779810 DOI: 10.1039/d1mh01155c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.
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Affiliation(s)
- Shanfei Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yuanmiao Xie
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Liang Zhang
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
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35
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Lee S, Alsalman H, Jiang W, Low T, Kwon YK. Transition Metal-Free Half-Metallicity in Two-Dimensional Gallium Nitride with a Quasi-Flat Band. J Phys Chem Lett 2021; 12:12150-12156. [PMID: 34914401 DOI: 10.1021/acs.jpclett.1c03966] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional half-metallicity without a transition metal is an attractive attribute for spintronics applications. On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band. We found that graphene plays a crucial role in stabilizing a local octahedral structure, whose unusually high density of states due to a flat band leads to a spontaneous phase transition to its half-metallic phase from normal metal. It was also found that its half-metallicity is strongly correlated to the in-plane lattice constants and thus subjected to substrate modification. To investigate the magnetic property, we simplified its magnetic structure with a two-dimensional Heisenberg model and performed Monte Carlo simulation. Our simulation estimated its Curie temperature (TC) to be ∼165 K under a weak external magnetic field, suggesting that transition metal-free 2D-GaN exhibiting p orbital-based half-metallicity can be utilized in future spintronics.
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Affiliation(s)
- Seungjun Lee
- Department of Physics, Kyung Hee University, Seoul 02447, Korea
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Hussain Alsalman
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Wei Jiang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Tony Low
- Department of Physics, Kyung Hee University, Seoul 02447, Korea
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
- Department of Physics, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Young-Kyun Kwon
- Department of Physics, Kyung Hee University, Seoul 02447, Korea
- Department of Information Display and Research Institute for Basic Sciences, Kyung Hee University, Seoul 02447, Korea
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36
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Coughlin AL, Xie D, Zhan X, Yao Y, Deng L, Hewa-Walpitage H, Bontke T, Chu CW, Li Y, Wang J, Fertig HA, Zhang S. Van der Waals Superstructure and Twisting in Self-Intercalated Magnet with Near Room-Temperature Perpendicular Ferromagnetism. NANO LETTERS 2021; 21:9517-9525. [PMID: 34729982 DOI: 10.1021/acs.nanolett.1c02940] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The emergence of van der Waals (vdW) magnets has created unprecedented opportunities to manipulate magnetism for advanced spintronics based upon all-vdW heterostructures. Among various vdW magnets, Cr1+δTe2 possesses high temperature ferromagnetism along with possible topological spin textures. As this system can support self-intercalation in the vdW gap, it is crucial to precisely pinpoint the exact intercalation to understand the intrinsic magnetism of the system. Here, we developed an iterative method to determine the self-intercalated structures and show evidence of vdW "superstructures" in individual Cr1+δTe2 nanoplates exhibiting magnetic behaviors distinct from bulk chromium tellurides. Among 26,332 possible configurations, we unambiguously identified the Cr-intercalated structure as 3-fold symmetry broken Cr1.5Te2 segmented by vdW gaps. Moreover, a twisted Cr-intercalated layered structure is observed. The spontaneous formation of twisted vdW "superstructures" not only provides insight into the diverse magnetic properties of intercalated vdW magnets but may also add complementary building blocks to vdW-based spintronics.
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Affiliation(s)
- Amanda L Coughlin
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
| | - Dongyue Xie
- Department of Mechanical and Materials Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Xun Zhan
- Electron Microscope Center, Indiana University, Bloomington, Indiana 47405, United States
| | - Yue Yao
- Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Liangzi Deng
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204, United States
| | - Heshan Hewa-Walpitage
- Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Trevor Bontke
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204, United States
| | - Ching-Wu Chu
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204, United States
- Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Yan Li
- Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Jian Wang
- Department of Mechanical and Materials Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Herbert A Fertig
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
- Quantum Science and Engineering Center, Indiana University, Bloomington, Indiana 47405, United States
| | - Shixiong Zhang
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
- Quantum Science and Engineering Center, Indiana University, Bloomington, Indiana 47405, United States
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37
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Liu M, Huang YL, Gou J, Liang Q, Chua R, Duan S, Zhang L, Cai L, Yu X, Zhong D, Zhang W, Wee ATS. Diverse Structures and Magnetic Properties in Nonlayered Monolayer Chromium Selenide. J Phys Chem Lett 2021; 12:7752-7760. [PMID: 34369783 DOI: 10.1021/acs.jpclett.1c01493] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Thickness-dependent magnetic behavior has previously been observed in chemical vapor deposition-grown chromium selenide. However, the low-dimensional structure in nonlayered chromium selenide, which plays a crucial role in determining the low-dimensional magnetic order, needs further study. Here, we report the structure-dependent magnetic properties in monolayer CrSe2 and Cr2Se3 grown by molecular beam epitaxy. In the monolayer CrSe2, 1T-CrSe2 with a lattice constant of 3.3 Å has a metallic character, coexisting with the 1T″ phase with 2 × 2 surface periodicity. Monolayer CrSe2 can be transformed into Cr2Se3 with a lattice constant of 3.6 Å by annealing at 300 °C. X-ray magnetic circular dichroism (XMCD) measurements combined with DFT calculations reveal that while the MBE-grown monolayer CrSe2 is antiferromagnetic, monolayer Cr2Se3 is ferromagnetic with a Curie temperature of ∼200 K. This work demonstrates the structural diversity in nonlayered chromium selenide and the critical effect of different structures on its electronic and magnetic properties.
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Affiliation(s)
- Meizhuang Liu
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Yu Li Huang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Jian Gou
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Qijie Liang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Rebekah Chua
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Sisheng Duan
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Lei Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - LiangLiang Cai
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore 117603, Singapore
| | - Dingyong Zhong
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Wenjing Zhang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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