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Tang Z, Ye F, Ni N, Fan X, Lu L, Gu P. Frontier applications of retinal nanomedicine: progress, challenges and perspectives. J Nanobiotechnology 2025; 23:143. [PMID: 40001147 PMCID: PMC11863789 DOI: 10.1186/s12951-025-03095-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2024] [Accepted: 01/04/2025] [Indexed: 02/27/2025] Open
Abstract
The human retina is a fragile and sophisticated light-sensitive tissue in the central nervous system. Unhealthy retinas can cause irreversible visual deterioration and permanent vision loss. Effective therapeutic strategies are restricted to the treatment or reversal of these conditions. In recent years, nanoscience and nanotechnology have revolutionized targeted management of retinal diseases. Pharmaceuticals, theranostics, regenerative medicine, gene therapy, and retinal prostheses are indispensable for retinal interventions and have been significantly advanced by nanomedical innovations. Hence, this review presents novel insights into the use of versatile nanomaterial-based nanocomposites for frontier retinal applications, including non-invasive drug delivery, theranostic contrast agents, therapeutic nanoagents, gene therapy, stem cell-based therapy, retinal optogenetics and retinal prostheses, which have mainly been reported within the last 5 years. Furthermore, recent progress, potential challenges, and future perspectives in this field are highlighted and discussed in detail, which may shed light on future clinical translations and ultimately, benefit patients with retinal disorders.
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Affiliation(s)
- Zhimin Tang
- Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200011, People's Republic of China
- Shanghai Key Laboratory of Orbital Diseases and Ocular Oncology, Shanghai, 200011, People's Republic of China
| | - Fuxiang Ye
- Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200011, People's Republic of China
- Shanghai Key Laboratory of Orbital Diseases and Ocular Oncology, Shanghai, 200011, People's Republic of China
| | - Ni Ni
- Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200011, People's Republic of China
- Shanghai Key Laboratory of Orbital Diseases and Ocular Oncology, Shanghai, 200011, People's Republic of China
| | - Xianqun Fan
- Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200011, People's Republic of China.
- Shanghai Key Laboratory of Orbital Diseases and Ocular Oncology, Shanghai, 200011, People's Republic of China.
| | - Linna Lu
- Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200011, People's Republic of China.
- Shanghai Key Laboratory of Orbital Diseases and Ocular Oncology, Shanghai, 200011, People's Republic of China.
| | - Ping Gu
- Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200011, People's Republic of China.
- Shanghai Key Laboratory of Orbital Diseases and Ocular Oncology, Shanghai, 200011, People's Republic of China.
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Li Y, Sun H, Yue L, Yang F, Dong X, Chen J, Chen J, Zhang X, Zhao Y, Chen K, Li Y. Multifunctional Artificial Electric Synapse of MoSe 2-Based Memristor toward Neuromorphic Application. J Phys Chem Lett 2025; 16:1175-1183. [PMID: 39847403 DOI: 10.1021/acs.jpclett.4c03353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2025]
Abstract
Research on memristive devices to seamlessly integrate and replicate the dynamic behaviors of biological synapses will illuminate the mechanisms underlying parallel processing and information storage in the human brain, thereby affording novel insights for the advancement of artificial intelligence. Here, an artificial electric synapse is demonstrated on a one-step Mo-selenized MoSe2 memristor, having not only long-term stable resistive switching characteristics (reset 0.51 ± 0.01 V, on/off ratio > 30, retention > 103 s) but also diverse electrically adjustable synaptic behaviors, including multilevel conductance (synaptic weight), excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/D), spike-timing-dependent plasticity (STDP), and especially activity-dependent synaptic plasticity (ADSP). More significantly, neuromorphic functions of both image edge extraction and biological perception imitation have been successfully achieved. These results present a promising design toward synaptic devices for advancing neuromorphic systems with integrated brain-like neural sensing, memory, and recognition.
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Affiliation(s)
- Yumo Li
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Langchun Yue
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Fengxia Yang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Kai Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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Liu W, Wang J, Guo J, Wang L, Gu Z, Wang H, Fang H. Efficient Carbon-Based Optoelectronic Synapses for Dynamic Visual Recognition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025:e2414319. [PMID: 39840530 DOI: 10.1002/advs.202414319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2024] [Revised: 01/06/2025] [Indexed: 01/23/2025]
Abstract
The human visual nervous system excels at recognizing and processing external stimuli, essential for various physiological functions. Biomimetic visual systems leverage biological synapse properties to improve memory encoding and perception. Optoelectronic devices mimicking these synapses can enhance wearable electronics, with layered heterojunction materials being ideal materials for optoelectronic synapses due to their tunable properties and biocompatibility. However, conventional synthesis methods are complex and environmentally harmful, leading to issues such as poor stability and low charge transfer efficiency. Therefore, it is imperative to develop a more efficient, convenient, and eco-friendly method for preparing layered heterojunction materials. Here, a one-step ultrasonic method is employed to mix fullerene (C60) with graphene oxide (GO), yielding a homogeneous layered heterojunction composite film via self-assembly. The biomimetic optoelectronic synapse based on this film achieves 97.3% accuracy in dynamic visual recognition tasks and exhibits capabilities such as synaptic plasticity. Experiments utilizing X-ray photoelectron spectroscopy (XPS), X-ray diffraction spectroscopy (XRD), Fourier-transform infrared spectroscopy (FTIR), ultraviolet-visible spectroscopy (UV-vis), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) confirms stable π-π interactions between GO and C60, facilitating electron transfer and prolonging carrier recombination times. The novel approach leveraging high-density π electron materials advances artificial intelligence and neuromorphic systems.
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Affiliation(s)
- Wenhao Liu
- Haiping Fang, School of Physics, East China University of Science and Technology, Shanghai, 20023, China
| | - Jihong Wang
- Haiping Fang, School of Physics, East China University of Science and Technology, Shanghai, 20023, China
- Key Laboratory of Smart Manufacturing in Energy Chemical Process Ministry of Education, East China University of Science and Technology, Shanghai, 200237, China
| | - Jiahao Guo
- Key Laboratory of Smart Manufacturing in Energy Chemical Process Ministry of Education, East China University of Science and Technology, Shanghai, 200237, China
| | - Lin Wang
- Zhejiang Lab, Hangzhou, 311100, China
| | - Zhen Gu
- Key Laboratory of Smart Manufacturing in Energy Chemical Process Ministry of Education, East China University of Science and Technology, Shanghai, 200237, China
| | - Huifeng Wang
- Key Laboratory of Smart Manufacturing in Energy Chemical Process Ministry of Education, East China University of Science and Technology, Shanghai, 200237, China
| | - Haiping Fang
- Haiping Fang, School of Physics, East China University of Science and Technology, Shanghai, 20023, China
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4
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Hadke S, Kang MA, Sangwan VK, Hersam MC. Two-Dimensional Materials for Brain-Inspired Computing Hardware. Chem Rev 2025; 125:835-932. [PMID: 39745782 DOI: 10.1021/acs.chemrev.4c00631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2025]
Abstract
Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security to healthcare. However, the current strategy of implementing artificial intelligence algorithms using conventional silicon hardware is leading to unsustainable energy consumption. Neuromorphic hardware based on electronic devices mimicking biological systems is emerging as a low-energy alternative, although further progress requires materials that can mimic biological function while maintaining scalability and speed. As a result of their diverse unique properties, atomically thin two-dimensional (2D) materials are promising building blocks for next-generation electronics including nonvolatile memory, in-memory and neuromorphic computing, and flexible edge-computing systems. Furthermore, 2D materials achieve biorealistic synaptic and neuronal responses that extend beyond conventional logic and memory systems. Here, we provide a comprehensive review of the growth, fabrication, and integration of 2D materials and van der Waals heterojunctions for neuromorphic electronic and optoelectronic devices, circuits, and systems. For each case, the relationship between physical properties and device responses is emphasized followed by a critical comparison of technologies for different applications. We conclude with a forward-looking perspective on the key remaining challenges and opportunities for neuromorphic applications that leverage the fundamental properties of 2D materials and heterojunctions.
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Affiliation(s)
- Shreyash Hadke
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Min-A Kang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States
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Guo F, Liu Y, Zhang M, Yu W, Li S, Zhang B, Hu B, Zhong L, Jie W, Hao L. A Dual-Functional Integration of Photodetectors and Artificial Optoelectronic Synapses on a VO 2/WO 3 Heterojunction Device. SMALL METHODS 2025; 9:e2400779. [PMID: 38940078 DOI: 10.1002/smtd.202400779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2024] [Revised: 06/18/2024] [Indexed: 06/29/2024]
Abstract
Bionic visual systems require multimodal integration of eye-like photodetectors and brain-like image memory. However, the integration of photodetectors (PDs) and artificial optoelectronic synapses devices (OESDs) by one device remains a giant challenge due to their photoresponse discrepancy. Herein, a dual-functional integration of PDs and OESDs based on VO2/WO3 heterojunctions is presented. The device can be able to realize a dual-mode conversion between PDs and OESDs through tuning the bias voltage. Under zero bias voltage, the device exhibiting excellent photodetecting behaviors based on the photovoltaic effect, showing a high self-powered photoresponsivity of 18.5 mA W-1 and high detectivity of 7.5 × 1010 Jones with fast photoresponse. When the external bias voltages are applied, it can be acted as an OESD and exhibit versatile electrical and photonic synaptic characteristics based on the trapping and detrapping effects, including synaptic plasticity and learning-experience behaviors. More importantly, benefiting from the excellent photosensing ability and transporting properties, the device shows ultralow-power consumption of 39.0 pJ and a 4 × 4 OESDs array is developed to realize the visual perception and memory. This work not only supplies a novel route to realize complex functional integration just in one device, but also offers effective strategies for developing neuromorphic visual system.
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Affiliation(s)
- Fuhai Guo
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Lun Zhong
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China
| | - Wenjing Jie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
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6
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Liu Z, Wang Y, Zhang Y, Sun S, Zhang T, Zeng YJ, Hu L, Zhuge F, Lu B, Pan X, Ye Z. Harnessing Defects in SnSe Film via Photo-Induced Doping for Fully Light-Controlled Artificial Synapse. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2410783. [PMID: 39648576 DOI: 10.1002/adma.202410783] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2024] [Revised: 10/15/2024] [Indexed: 12/10/2024]
Abstract
2D-layered materials are recognized as up-and-coming candidates to overcome the intrinsic physical limitation of silicon-based devices. Herein, the coexistence of positive persistent photoconductivity (PPPC) and negative persistent photoconductivity (NPPC) in SnSe thin films prepared by pulsed laser deposition provides an excellent avenue for engineering novel devices. It is determined that surface oxygen is co-regulated by physisorption and chemisorption, and the NPPC is attributed to the photo-controllable oxygen desorption behavior. The dominant behavior of chemisorption induces high stability, while physisorption provides room for adjusting NPPC. A simple fully light-modulated artificial synaptic device based on SnSe film is constructed to operate various synaptic plasticity and reversible modulation of conductance by applying 430 and 255 nm illuminations. A three-layer artificial neural network structure with a high accuracy of 95.33% to recognize handwritten digital images is implemented based on the device. Furthermore, the pressure-related cognition response of humans while climbing and the foraging and recognition behaviors of anemonefish are mimicked. This work demonstrates the potential of 2D-layered materials for developing neuromorphic computing and simulating biological behaviors without additional treatment. Furthermore, the one-step method for preparation is highly adaptable and expected to realize large-area growth and integration of SnSe-based devices.
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Affiliation(s)
- Zihui Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Yao Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Yumin Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Shuyi Sun
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Tao Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
- Kunming Institute of Physics, Kunming, Yunnan Province, 650223, P. R. China
| | - Yu-Jia Zeng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Lingxiang Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Bin Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Xinhua Pan
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
| | - Zhizhen Ye
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
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Ma M, Huang C, Yang M, He D, Pei Y, Kang Y, Li W, Lei C, Xiao X. Ultra-Low Power Consumption Artificial Photoelectric Synapses Based on Lewis Acid Doped WSe 2 for Neuromorphic Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2406402. [PMID: 39434458 DOI: 10.1002/smll.202406402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2024] [Revised: 09/22/2024] [Indexed: 10/23/2024]
Abstract
Capitalizing on the extensive spectral capacity and minimal crosstalk properties inherent in optical signals, photoelectric synapses are poised to assume a pivotal stance in the realm of neuromorphic computation. Herein, a photoelectric synapse based on Lewis acid-doped semiconducting tungsten diselenide (WSe2) is introduced, exhibiting tunable short-term and long-term plasticity. The device consumes a mere 0.1 fJ per synaptic operation, which is lower than the energy required by a single synaptic event observed in the human brain. Furthermore, these devices demonstrate high-pass filtering capabilities, highlighting their potential in image-sharpening applications. In particular, by synergistically modulating the photoconductivity and electrical gate bias, versatile logic capabilities are demonstrated within a single device, enabling it to flexibly perform both Boolean AND and OR gate operations. This work demonstrates a viable approach for Lewis acid-treated TMDs to realize multifunctional photoelectric synapses for neuromorphic computing.
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Affiliation(s)
- Mingjun Ma
- The Institute of Technological Sciences, Wuhan University, Wuhan, Hubei, 430072, China
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
| | - Chaoning Huang
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
| | - Mingyu Yang
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
| | - Dong He
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
| | - Yongfeng Pei
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
| | - Yufan Kang
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
| | - Wenqing Li
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
| | - Cheng Lei
- The Institute of Technological Sciences, Wuhan University, Wuhan, Hubei, 430072, China
| | - Xiangheng Xiao
- School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan, 430072, China
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Chen Y, Wang Z, Du J, Si C, Jiang C, Yang S. Wrinkled Rhenium Disulfide for Anisotropic Nonvolatile Memory and Multiple Artificial Neuromorphic Synapses. ACS NANO 2024; 18:30871-30883. [PMID: 39433444 DOI: 10.1021/acsnano.4c11898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2024]
Abstract
Two-dimensional materials are emerging as potential solutions for high-density nonvolatile memory and efficient neuromorphic computing. However, integrating multidimensional memory and an ideal linear weight updating synapse in a simple device configuration to achieve versatile biomimetic neuromorphic systems remains challenging. Here, we introduce a wrinkled rhenium disulfide (ReS2) transistor, where the wrinkled structure facilitates the carrier trapping/detrapping at the dielectric interface, thus enabling the fusion of nonvolatile memory and both electronic and optoelectronic synaptic functionalities. As a nonvolatile memory, anisotropic wrinkled ReS2 can yield three distinct sets of data across three crystal orientations under identical programming operations. Each set demonstrates exceptional retention and endurance properties. As a neuromorphic synapse, it realizes the linear and symmetric updates of conductance states up to 9 bits and 8 bits, the ultra-low-energy consumption of 75 fJ and 2.5 pJ under the electrical and optical stimuli, respectively. The artificial neural network (ANN) based on electronic synapses gives a superior recognition accuracy of 92.9% for the original handwritten digits. The anisotropic synaptic responses and multiwavelength sensitivities of optoelectronic synapses enable them to execute advanced memory and recognition functions for complex images that encompass a variety of pattern features or color information. This underscores its substantial potential for integration into efficient biomimetic visual systems.
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Affiliation(s)
- Yujia Chen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China
| | - Zhengjie Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China
| | - Jiantao Du
- School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China
| | - Chen Si
- School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China
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9
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Choi C, Lee GJ, Chang S, Song YM, Kim DH. Inspiration from Visual Ecology for Advancing Multifunctional Robotic Vision Systems: Bio-inspired Electronic Eyes and Neuromorphic Image Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2412252. [PMID: 39402806 DOI: 10.1002/adma.202412252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2024] [Revised: 09/18/2024] [Indexed: 11/29/2024]
Abstract
In robotics, particularly for autonomous navigation and human-robot collaboration, the significance of unconventional imaging techniques and efficient data processing capabilities is paramount. The unstructured environments encountered by robots, coupled with complex missions assigned to them, present numerous challenges necessitating diverse visual functionalities, and consequently, the development of multifunctional robotic vision systems has become indispensable. Meanwhile, rich diversity inherent in animal vision systems, honed over evolutionary epochs to meet their survival demands across varied habitats, serves as a profound source of inspirations. Here, recent advancements in multifunctional robotic vision systems drawing inspiration from natural ocular structures and their visual perception mechanisms are delineated. First, unique imaging functionalities of natural eyes across terrestrial, aerial, and aquatic habitats and visual signal processing mechanism of humans are explored. Then, designs and functionalities of bio-inspired electronic eyes are explored, engineered to mimic key components and underlying optical principles of natural eyes. Furthermore, neuromorphic image sensors are discussed, emulating functional properties of synapses, neurons, and retinas and thereby enhancing accuracy and efficiency of robotic vision tasks. Next, integration examples of electronic eyes with mobile robotic/biological systems are introduced. Finally, a forward-looking outlook on the development of bio-inspired electronic eyes and neuromorphic image sensors is provided.
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Affiliation(s)
- Changsoon Choi
- Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Gil Ju Lee
- School of Electrical and Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
- AI Graduate School, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
- Department of Semiconductor Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
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10
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Liu B, Dong X, Li Y, He Z, Sun H, Wang K, Wang M, Xu M, Miao C, Huang W, Liu J. Centimeter-Scale Assembly of Fractal Organic Crystals with Crisscross Structures for Flexible Photosynapses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2404733. [PMID: 39139061 DOI: 10.1002/smll.202404733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Revised: 07/27/2024] [Indexed: 08/15/2024]
Abstract
Fractal assembly technology enables scalable construction of organic crystal patterns for emerging nanoelectronics and optoelectronics. Here, a polymer-templating assembly strategy is presented for centimeter-scale patterned growth of fractal organic crystals (FOCs). These structures are formed by drop-coating perylene solution directly onto a gelatin-modified surface, resulting in the formation of crisscross fractal patterns. By adjusting the tilt angle of the template, the morphology of FOCs can be effectively controlled, with the diameter distribution of each level branch ranging from hundreds to ten micrometers. The planar FOC device exhibits flexible photoreception and photosynaptic capabilities, with a high specific detectivity of 1.35 × 109 Jones and paired-pulse facilitation (PPF) index of 104%, withstanding a 0.5 cm bending radius during bending test. These findings present a reliable route for large-scale assembly of flexible organic crystalline materials toward neuromorphic electronics.
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Affiliation(s)
- Bin Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Xuemei Dong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Yinxiang Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Zixi He
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Hongchao Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Kaili Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Min Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Min Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Chunyang Miao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
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11
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Luo J, Tong X, Yue S, Wu K, Li X, Zhao H, Wang B, Li Z, Liu X, Wang ZM. Tailored Environment-Friendly Reverse Type-I Colloidal Quantum Dots for a Near-Infrared Optical Synapse and Artificial Vision System. ACS NANO 2024; 18:29991-30003. [PMID: 39431329 DOI: 10.1021/acsnano.4c10795] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2024]
Abstract
Colloidal quantum dots (QDs) are emerging as potential candidates for constructing near-infrared (NIR) photodetectors (PDs) and artificial optoelectronic synapses due to solution processability and a tunable bandgap. However, most of the current NIR QDs-optoelectronic devices are still fabricated using QDs with incorporated harmful heavy metals of lead (Pb) and mercury (Hg), showing potential health and environment risks. In this work, we tailored eco-friendly reverse type-I ZnSe/InP QDs by copper (Cu) doping and extended the photoresponse from the visible to NIR region. Transient absorption spectroscopy analysis revealed the presence of Cu dopant states in ZnSe/InP:Cu QDs that facilitated the extraction of photogenerated charge carriers, leading to an enhanced photodetection performance. Specifically, under 400 nm illumination, the Cu-doped ZnSe/InP QDs-based PDs presented a broadband photodetection ranging from ultraviolet (UV) to NIR, with a responsivity of 70.5 A W-1 and detectivity of 2.8 × 1011 Jones, surpassing those of the undoped ZnSe/InP QDs-based PDs (49.4 A W-1 and 1.9 × 1011 Jones, respectively). More importantly, the ZnSe/InP:Cu QDs-PDs demonstrated various synapse-like characteristics of short-term plasticity (STP), long-term plasticity (LTP), and learning-forging-relearning under NIR light illumination, which were further used to construct PD array devices for simulating the artificial visual system that is available in prospective optical neuromorphic applications.
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Affiliation(s)
- Jingying Luo
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xin Tong
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, Yunnan University, Kunming 650091, China
- Shimmer Center, Tianfu Jiangxi Laboratory, Chengdu 641419, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Keming Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Xin Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hongyang Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Binyu Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhuojian Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Shimmer Center, Tianfu Jiangxi Laboratory, Chengdu 641419, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- Institute for Advanced Study, Chengdu University, Chengdu 610106, China
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12
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Yang H, Zhang Y, Hu F, Li Z, Wu D, Chen X. Comprehensively Modulated Sub-Attojoule Operated Optoelectronic Synapses for Image Encryption and Inpainting. ACS APPLIED MATERIALS & INTERFACES 2024; 16:57804-57815. [PMID: 39207873 DOI: 10.1021/acsami.4c08070] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
High-performance optoelectronic synaptic transistors play a crucial role in developing and emulating artificial visual systems. However, due to the predominant use of single-structure material modulation in optimizing optoelectronic synapses, their energy consumption significantly trails behind that of electronic synapses by several orders of magnitude. Herein, polymer dielectric layers and optimized contact strategies are adopted to realize the ultralow consumption optoelectronic synapses. Integration of polyimide dielectric significantly enhances photogenerated charge carrier dissociation, leading to substantial improvements in photoresponsivity (1.5 × 106 A·W-1), photodetectivity (6.9 × 1012 Jones), and external quantum efficiency (4.0 × 108%). Additionally, optimized contact properties augment their appeal for ultralow energy consumption in optoelectronic synapse applications. Excitatory postsynaptic current is triggered at an incredibly low voltage of 5 μV and boosts an impressively low energy consumption of 0.05 aJ, ranking among the best-reported results in this field. Next, we demonstrate an integrated system combining the MoS2 optoelectronic synapses with a recurrent neural network enabling 100% accurate recognition of optical signals, particularly in scenarios with aJ-leveled energy consumption. Finally, an image encryption system has been developed, in which images are encrypted by photoelectronic conversion of synapse arrays with random voltage settings and decrypted according to the recurrent neural network-based accuracy. More importantly, once partially damaged images are encrypted, through the decryption image inpainting can be realized due to the high accuracy. The proposed innovative approach holds promise for advancing artificial intelligence applications with improved energy efficiency, information security, and computational capabilities.
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Affiliation(s)
- Hui Yang
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yifei Zhang
- Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
| | - Fangzhen Hu
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Ziqing Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Dongping Wu
- Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
| | - Xi Chen
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China
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13
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Li Y, Sun H, Yue L, Yang F, Dong X, Chen J, Zhang X, Chen J, Zhao Y, Chen K, Li Y. Multicolor Fully Light-Modulated Artificial Synapse Based on P-MoSe 2/P xO y Heterostructured Memristor. J Phys Chem Lett 2024; 15:8752-8758. [PMID: 39163351 DOI: 10.1021/acs.jpclett.4c01980] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
Developing brain-inspired neuromorphic paradigms is imperative to breaking through the von Neumann bottleneck. The emulation of synaptic functionality has motivated the exploration of optoelectronic memristive devices as high-performance artificial synapses, yet the realization of such a modulatory terminal capable of full light-modulation, especially near-infrared stimuli, remains a challenge. Here, a fully light-modulated synaptic memristor is reported on a P-MoSe2/PxOy heterostructure formed by a facile one-step selenization process. The results demonstrate successful achievement of multiwavelength (visible 470 nm to near-infrared 808 nm) modulated switching operations (reset in 0.21-0.97 V) and diverse synaptic behaviors, including postsynaptic current, paired-pulse facilitation, short- and long-term memory (STM and LTM), and learning-forgetting. Notably, the device can exhibit a 3.42 μA PSC increase under six identical 655 nm stimuli, a 11.90-46.24 μA PSC modulation by changing 808 nm light intensity from 6 to 14 mW/cm2, and a transition from STM to LTM lasting between 2.47 and 4.27 s by a prolonged 808 nm pulse from 1 to 30 s. A novel possible light-induced switching mechanism in such a heterostructure is proposed. Furthermore, brain-like light-stimulated memory behavior and Pavlov's classical conditioning demonstrate the device's capacity for processing complex inputs. The study presents a design toward a multiwavelength modulated artificial visual system for color recognition.
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Affiliation(s)
- Yumo Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Langchun Yue
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Fengxia Yang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Kai Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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14
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Yao J, Wang Q, Zhang Y, Teng Y, Li J, Zhao P, Zhao C, Hu Z, Shen Z, Liu L, Tian D, Qiu S, Wang Z, Kang L, Li Q. Ultra-low power carbon nanotube/porphyrin synaptic arrays for persistent photoconductivity and neuromorphic computing. Nat Commun 2024; 15:6147. [PMID: 39034334 PMCID: PMC11271480 DOI: 10.1038/s41467-024-50490-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 07/10/2024] [Indexed: 07/23/2024] Open
Abstract
Developing devices with a wide-temperature range persistent photoconductivity (PPC) and ultra-low power consumption remains a significant challenge for optical synaptic devices used in neuromorphic computing. By harnessing the PPC properties in materials, it can achieve optical storage and neuromorphic computing, surpassing the von Neuman architecture-based systems. However, previous research implemented PPC required additional gate voltages and low temperatures, which need additional energy consumption and PPC cannot be achieved across a wide temperature range. Here, we fabricated a simple heterojunctions using zinc(II)-meso-tetraphenyl porphyrin (ZnTPP) and single-walled carbon nanotubes (SWCNTs). By leveraging the strong binding energy at the heterojunction interface and the unique band structure, the heterojunction achieved PPC over an exceptionally wide temperature range (77 K-400 K). Remarkably, it demonstrated nonvolatile storage for up to 2×104 s, without additional gate voltage. The minimum energy consumption for each synaptic event is as low as 6.5 aJ. Furthermore, we successfully demonstrate the feasibility to manufacture a flexible wafer-scale array utilizing this heterojunction. We applied it to autonomous driving under extreme temperatures and achieved as a high impressive accuracy rate as 94.5%. This tunable and stable wide-temperature PPC capability holds promise for ultra-low-power neuromorphic computing.
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Affiliation(s)
- Jian Yao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Qinan Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Jing Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Pin Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Chun Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China.
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zongjie Shen
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Liwei Liu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Dan Tian
- College of Materials Science and Engineering, Co-Innovation Center of Effiicient Processing and Utilization of Forest Resources, Nanjing Forestry University, Nanjing, 210037, China
| | - Song Qiu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, 999077, China
| | - Lixing Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Qingwen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
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15
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Choi C, Hinton H, Seung H, Chang S, Kim JS, You W, Kim MS, Hong JP, Lim JA, Hwang DK, Lee GJ, Jang H, Song YM, Kim DH, Ham D. Anti-distortion bioinspired camera with an inhomogeneous photo-pixel array. Nat Commun 2024; 15:6021. [PMID: 39019856 PMCID: PMC11255341 DOI: 10.1038/s41467-024-50271-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Accepted: 07/03/2024] [Indexed: 07/19/2024] Open
Abstract
The bioinspired camera, comprising a single lens and a curved image sensor-a photodiode array on a curved surface-, was born of flexible electronics. Its economical build lends itself well to space-constrained machine vision applications. The curved sensor, much akin to the retina, helps image focusing, but the curvature also creates a problem of image distortion, which can undermine machine vision tasks such as object recognition. Here we report an anti-distortion single-lens camera, where 4096 silicon photodiodes arrayed on a curved surface in a nonuniform pattern assimilated to the distorting optics are the key to anti-distortion engineering. That is, the photo-pixel distribution pattern itself is warped in the same manner as images are warped, which correctively reverses distortion. Acquired images feature no appreciable distortion across a 120° horizontal view, as confirmed by their neural-network recognition accuracies. This distortion correction via photo-pixel array reconfiguration is a form of in-sensor computing.
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Affiliation(s)
- Changsoon Choi
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
- Center for Opto-Electronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Henry Hinton
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Hyojin Seung
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Ji Su Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Woosang You
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Min Sung Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jung Pyo Hong
- Center for Opto-Electronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02792, Republic of Korea
| | - Jung Ah Lim
- Center for Opto-Electronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02792, Republic of Korea
| | - Gil Ju Lee
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
- Department of Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Houk Jang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.
| | - Donhee Ham
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
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16
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Guo L, Sun H, Min L, Wang M, Cao F, Li L. Two-Terminal Perovskite Optoelectronic Synapse for Rapid Trained Neuromorphic Computation with High Accuracy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402253. [PMID: 38553842 DOI: 10.1002/adma.202402253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 03/16/2024] [Indexed: 04/09/2024]
Abstract
Emerging neural morphological vision sensors inspired by biological systems that integrate image perception, memory, and information computing are expected to transform the landscape of machine vision and artificial intelligence. However, stable and reconfigurable light-induced synaptic behavior always relies on independent gateport modulation. Despite its potential, the limitations of uncontrollable defects and ionic characteristics have led to simpler, smaller, and more integration-friendly two-terminal devices being used as sidelines. In this work, the synergy between ion migration barriers and readout voltage is proven to be the key to realizing stable, reconfigurable, and precisely controllable postsynaptic current in two-terminal devices. Following the same mechanism, optical and electrical signal synchronous triggering is proposed to serve as a preprocessing method to achieve a recognition accuracy of 96.5%. Impressively, the gradual ion accumulation during the training process induces photocurrent evolution, serving as a reference for the dynamic learning rate and boosting accuracy to 97.8% in just 10 epochs. The PSC modulation potential under short optical pulse of 20 ns is also revealed. This optoelectronic device with perception, memory, and computation capabilities can promote the development of new devices for future photonic neural morphological circuits and artificial vision.
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Affiliation(s)
- Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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17
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Cao H, Hu T, Zhang J, Zhao D, Chen Y, Wang X, Yang J, Zhang Y, Tang X, Bai W, Shen H, Wang J, Chu J. Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSe 2 Mixed-Dimensional Heterojunction Phototransistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400018. [PMID: 38502873 PMCID: PMC11165519 DOI: 10.1002/advs.202400018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 02/19/2024] [Indexed: 03/21/2024]
Abstract
Mix-dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero-integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo-thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W-1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero-integration and multifunctions.
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Affiliation(s)
- Hechun Cao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Tao Hu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jiyue Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Dongyang Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Yan Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
| | - Xudong Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuanShanxi030006P. R. China
| | - Wei Bai
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
- Frontier Institute of Chip and SystemFudan UniversityShanghai200433P. R. China
| | - Junhao Chu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
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18
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Luo X, Chen C, He Z, Wang M, Pan K, Dong X, Li Z, Liu B, Zhang Z, Wu Y, Ban C, Chen R, Zhang D, Wang K, Wang Q, Li J, Lu G, Liu J, Liu Z, Huang W. A bionic self-driven retinomorphic eye with ionogel photosynaptic retina. Nat Commun 2024; 15:3086. [PMID: 38600063 PMCID: PMC11006927 DOI: 10.1038/s41467-024-47374-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 03/27/2024] [Indexed: 04/12/2024] Open
Abstract
Bioinspired bionic eyes should be self-driving, repairable and conformal to arbitrary geometries. Such eye would enable wide-field detection and efficient visual signal processing without requiring external energy, along with retinal transplantation by replacing dysfunctional photoreceptors with healthy ones for vision restoration. A variety of artificial eyes have been constructed with hemispherical silicon, perovskite and heterostructure photoreceptors, but creating zero-powered retinomorphic system with transplantable conformal features remains elusive. By combining neuromorphic principle with retinal and ionoelastomer engineering, we demonstrate a self-driven hemispherical retinomorphic eye with elastomeric retina made of ionogel heterojunction as photoreceptors. The receptor driven by photothermoelectric effect shows photoperception with broadband light detection (365 to 970 nm), wide field-of-view (180°) and photosynaptic (paired-pulse facilitation index, 153%) behaviors for biosimilar visual learning. The retinal photoreceptors are transplantable and conformal to any complex surface, enabling visual restoration for dynamic optical imaging and motion tracking.
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Affiliation(s)
- Xu Luo
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chen Chen
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zixi He
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Min Wang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Keyuan Pan
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuemei Dong
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zifan Li
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Bin Liu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zicheng Zhang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yueyue Wu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chaoyi Ban
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Rong Chen
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Dengfeng Zhang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Kaili Wang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Qiye Wang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Junyue Li
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Gang Lu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Zhengdong Liu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, China.
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, China.
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19
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Wang L, Zhang Y, Chen Y, Jiang L. Green Alga-Inspired Underwater Vision Based on Light-Driven Active Ion Transport across Janus Dual-Field Heterostructures. ACS NANO 2024; 18:9043-9052. [PMID: 38483837 DOI: 10.1021/acsnano.3c12874] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Natural organisms have evolved various biological ion channels to make timely responses toward different physical and/or chemical stimuli, giving guidance to construct artificial counterparts and expand the corresponding applications. They have also shown promising potential to overcome disadvantages of traditional electronic devices (e.g., energy-consuming operation and adverse humidity interference). Herein, we constructed a green alga-inspired nanofluidic system based on a Janus dual-field heterogeneous membrane (i.e., J-HM), which can function underwater as an artificial visual platform for light perception through enhanced active ion transport. The J-HM was obtained through sequentially assembled MXene and Cu-HHTP (i.e., a metal-organic framework based on the reaction between 2,3,6,7,10,11-hexahydroxytriphenylene hydrate (HHTP) and Cu2+) building units. Due to the formed temperature gradient and intramembrane electric field caused by the localized thermal excitation and efficient charge separation of J-HM under illumination, thermo-osmotic and photo-driven forces are generated for preferential cation transport from Cu-HHTP to MXene. Furthermore, unidirectional active transport can be enhanced by self-diffusion under a concentration gradient. Then, the corresponding underwater light perceptions at various light illumination conditions are explored, showing nearly a linear correlation with the light intensity. Finally, it is demonstrated that the visual platform can achieve object shape, definition, and distance recognition using a defined pixelated matrix, giving impetus to develop ionic signal transmission based sensing systems.
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Affiliation(s)
- Lili Wang
- University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Jiangsu 215123, China
| | - Yuhui Zhang
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yupeng Chen
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Jiang
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Jiangsu 215123, China
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20
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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21
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Hong J, Liu M, Liu Y, Shang S, Wang X, Du C, Gao W, Hua C, Xu H, You Z, Liu Y, Chen J. Solid-Liquid Interfacial Engineered Large-Area Two-Dimensional Covalent Organic Framework Films. Angew Chem Int Ed Engl 2024; 63:e202317876. [PMID: 38193266 DOI: 10.1002/anie.202317876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 12/25/2023] [Accepted: 01/08/2024] [Indexed: 01/10/2024]
Abstract
Constructing uniform covalent organic framework (COF) film on substrates for electronic devices is highly desirable. Here, a simple and mild strategy is developed to prepare them by polymerization on a solid-liquid interface. The universality of the method is confirmed by the successful preparation of five COF films with different microstructures. These films have large lateral size, controllable thickness, and high crystalline quality. And COF patterns can also be directly achieved on substrates via hydrophilic and hydrophobic interface engineering, which is in favor of preparing device array. For application studies, the PyTTA-TPA (PyTTA: 4,4',4'',4'''-(1,3,6,8-Tetrakis(4-aminophenyl)pyrene and TPA: terephthalaldehyde) COF film has a high photoresponsivity of 59.79 μA W-1 at 420 nm for photoelectrochemical (PEC) detection. When employed as an active material for optoelectronic synaptic devices for the first attempt, it shows excellent light-stimulated synaptic plasticity properties such as short-term plasticity (STP), long-term plasticity (LTP), and the conversion of STP to LTP, which can be used to simulate biological synaptic functions.
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Affiliation(s)
- Jiaxin Hong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Minghui Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Youxing Liu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R.China
| | - Shengcong Shang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xinyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Changsheng Du
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wenqiang Gao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chunyu Hua
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Helin Xu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zewen You
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jianyi Chen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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22
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Zhu S, Xie T, Lv Z, Leng YB, Zhang YQ, Xu R, Qin J, Zhou Y, Roy VAL, Han ST. Hierarchies in Visual Pathway: Functions and Inspired Artificial Vision. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301986. [PMID: 37435995 DOI: 10.1002/adma.202301986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 06/28/2023] [Accepted: 07/10/2023] [Indexed: 07/13/2023]
Abstract
The development of artificial intelligence has posed a challenge to machine vision based on conventional complementary metal-oxide semiconductor (CMOS) circuits owing to its high latency and inefficient power consumption originating from the data shuffling between memory and computation units. Gaining more insights into the function of every part of the visual pathway for visual perception can bring the capabilities of machine vision in terms of robustness and generality. Hardware acceleration of more energy-efficient and biorealistic artificial vision highly necessitates neuromorphic devices and circuits that are able to mimic the function of each part of the visual pathway. In this paper, we review the structure and function of the entire class of visual neurons from the retina to the primate visual cortex within reach (Chapter 2) are reviewed. Based on the extraction of biological principles, the recent hardware-implemented visual neurons located in different parts of the visual pathway are discussed in detail in Chapters 3 and 4. Furthermore, valuable applications of inspired artificial vision in different scenarios (Chapter 5) are provided. The functional description of the visual pathway and its inspired neuromorphic devices/circuits are expected to provide valuable insights for the design of next-generation artificial visual perception systems.
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Affiliation(s)
- Shirui Zhu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Tao Xie
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan-Bing Leng
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yu-Qi Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Runze Xu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingrun Qin
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- School of Science and Technology, Hong Kong Metropolitan University, Hong Kong, 999077, P. R. China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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23
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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24
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Choi C, Lee GJ, Chang S, Song YM, Kim DH. Nanomaterial-Based Artificial Vision Systems: From Bioinspired Electronic Eyes to In-Sensor Processing Devices. ACS NANO 2024; 18:1241-1256. [PMID: 38166167 DOI: 10.1021/acsnano.3c10181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
High-performance robotic vision empowers mobile and humanoid robots to detect and identify their surrounding objects efficiently, which enables them to cooperate with humans and assist human activities. For error-free execution of these robots' tasks, efficient imaging and data processing capabilities are essential, even under diverse and complex environments. However, conventional technologies fall short of meeting the high-standard requirements of robotic vision under such circumstances. Here, we discuss recent progress in artificial vision systems with high-performance imaging and data processing capabilities enabled by distinctive electrical, optical, and mechanical characteristics of nanomaterials surpassing the limitations of traditional silicon technologies. In particular, we focus on nanomaterial-based electronic eyes and in-sensor processing devices inspired by biological eyes and animal visual recognition systems, respectively. We provide perspectives on key nanomaterials, device components, and their functionalities, as well as explain the remaining challenges and future prospects of the artificial vision systems.
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Affiliation(s)
- Changsoon Choi
- Center for Optoelectronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Gil Ju Lee
- Department of Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- AI Graduate School, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- Department of Semiconductor Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
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25
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Kang T, Lu Z, Liu L, Huang M, Hu Y, Liu H, Wu R, Liu Z, You J, Chen Y, Zhang K, Duan X, Wang N, Liu Y, Luo Z. In Situ Defect Engineering of Controllable Carrier Types in WSe 2 for Homomaterial Inverters and Self-Powered Photodetectors. NANO LETTERS 2023. [PMID: 38038404 DOI: 10.1021/acs.nanolett.3c03328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.
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Affiliation(s)
- Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yunxia Hu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, No. 9 Yuexing first RD, Hi-Tech Park, Nanshan, Shenzhen 518057, People's Republic of China
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26
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Wang Y, Yuan Q, Meng X, Sun Y. Bio-inspired synaptic behavior simulation in thin-film transistors based on molybdenum disulfide. J Chem Phys 2023; 159:184702. [PMID: 37937938 DOI: 10.1063/5.0174857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 10/19/2023] [Indexed: 11/09/2023] Open
Abstract
Synaptic behavior simulation in transistors based on MoS2 has been reported. MoS2 was utilized as the active layer to prepare ambipolar thin-film transistors. The excitatory postsynaptic current phenomenon was simulated, observing a gradual voltage decay following the removal of applied pulses, ultimately resulting in a response current slightly higher than the initial current. Subsequently, ±5 V voltages were separately applied for ten consecutive pulse voltage tests, revealing short-term potentiation and short-term depression behaviors. After 92 consecutive positive pulses, the device current transitioned from an initial value of 0.14 to 28.3 mA. Similarly, following 88 consecutive negative pulses, the device current changed, indicating long-term potentiation and long-term depression behaviors. We also employed a pair of continuous triangular wave pulses to evaluate paired-pulse facilitation behavior, observing that the response current of the second stimulus pulse was ∼1.2× greater than that of the first stimulus pulse. The advantages and prospects of using MoS2 as a material for thin-film transistors were thoroughly displayed.
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Affiliation(s)
- Yufei Wang
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Qi Yuan
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Xinru Meng
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Yanmei Sun
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
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Jiang J, Xu W, Sun Z, Fu L, Zhang S, Qin B, Fan T, Li G, Chen S, Yang S, Ge W, Shen B, Tang N. Wavelength-Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe 2 for Artificial Synaptic Features. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2306068. [PMID: 37963834 DOI: 10.1002/smll.202306068] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Revised: 10/23/2023] [Indexed: 11/16/2023]
Abstract
Optoelectronic synapses are currently drawing significant attention as fundamental building blocks of neuromorphic computing to mimic brain functions. In this study, a two-terminal synaptic device based on a doped PdSe2 flake is proposed to imitate the key neural functions in an optical pathway. Due to the wavelength-dependent desorption of oxygen clusters near the intrinsic selenide vacancy defects, the doped PdSe2 photodetector achieves a high negative photoresponsivity of -7.8 × 103 A W-1 at 473 nm and a positive photoresponsivity of 181 A W-1 at 1064 nm. This wavelength-selective bi-direction photoresponse endows an all-optical pathway to imitate the fundamental functions of artificial synapses on a device level, such as psychological learning and forgetting capability, as well as dynamic logic functions. The underpinning photoresponse is further demonstrated on a flexible platform, providing a viable technology for neuromorphic computing in wearable electronics. Furthermore, the p-type doping results in an effective increase of the channel's electrical conductivity and a significant reduction in power consumption. Such low-power-consuming optical synapses with simple device architecture and low-dimensional features demonstrate tremendous promise for building multifunctional artificial neuromorphic systems in the future.
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Affiliation(s)
- Jiayang Jiang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhenhao Sun
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lei Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shixiong Zhang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Teng Fan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Guoping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shuaiyu Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Weikun Ge
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Ning Tang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
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Dutta R, Bala A, Sen A, Spinazze MR, Park H, Choi W, Yoon Y, Kim S. Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303272. [PMID: 37453927 DOI: 10.1002/adma.202303272] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 06/21/2023] [Accepted: 07/03/2023] [Indexed: 07/18/2023]
Abstract
The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.
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Affiliation(s)
- Riya Dutta
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Arindam Bala
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Anamika Sen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Michael Ross Spinazze
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Heekyeong Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Woong Choi
- School of Materials Science & Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - Youngki Yoon
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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Huang PY, Jiang BY, Chen HJ, Xu JY, Wang K, Zhu CY, Hu XY, Li D, Zhen L, Zhou FC, Qin JK, Xu CY. Neuro-inspired optical sensor array for high-accuracy static image recognition and dynamic trace extraction. Nat Commun 2023; 14:6736. [PMID: 37872169 PMCID: PMC10593955 DOI: 10.1038/s41467-023-42488-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Accepted: 10/12/2023] [Indexed: 10/25/2023] Open
Abstract
Neuro-inspired vision systems hold great promise to address the growing demands of mass data processing for edge computing, a distributed framework that brings computation and data storage closer to the sources of data. In addition to the capability of static image sensing and processing, the hardware implementation of a neuro-inspired vision system also requires the fulfilment of detecting and recognizing moving targets. Here, we demonstrated a neuro-inspired optical sensor based on two-dimensional NbS2/MoS2 hybrid films, which featured remarkable photo-induced conductance plasticity and low electrical energy consumption. A neuro-inspired optical sensor array with 10 × 10 NbS2/MoS2 phototransistors enabled highly integrated functions of sensing, memory, and contrast enhancement capabilities for static images, which benefits convolutional neural network (CNN) with a high image recognition accuracy. More importantly, in-sensor trajectory registration of moving light spots was experimentally implemented such that the post-processing could yield a high restoration accuracy. Our neuro-inspired optical sensor array could provide a fascinating platform for the implementation of high-performance artificial vision systems.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Bi-Yi Jiang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Hong-Ji Chen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Jia-Yi Xu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kang Wang
- Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Xin-Yan Hu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Dong Li
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Liang Zhen
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Fei-Chi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China.
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30
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Dong X, Chen C, Pan K, Li Y, Zhang Z, He Z, Liu B, Zhou Z, Wu Y, Zhang D, Sun H, Qian X, Xu M, Huang W, Liu J. Nearly Panoramic Neuromorphic Vision with Transparent Photosynapses. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303944. [PMID: 37635198 PMCID: PMC10602561 DOI: 10.1002/advs.202303944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 07/25/2023] [Indexed: 08/29/2023]
Abstract
Neuromorphic vision based on photonic synapses has the ability to mimic sensitivity, adaptivity, and sophistication of bio-visual systems. Significant advances in artificial photosynapses are achieved recently. However, conventional photosyanptic devices normally employ opaque metal conductors and vertical device configuration, performing a limited hemispherical field of view. Here, a transparent planar photonic synapse (TPPS) is presented that offers dual-side photosensitive capability for nearly panoramic neuromorphic vision. The TPPS consisting of all two dimensional (2D) carbon-based derivatives exhibits ultra-broadband photodetecting (365-970 nm) and ≈360° omnidirectional viewing angle. With its intrinsic persistent photoconductivity effect, the detector possesses bio-synaptic behaviors such as short/long-term memory, experience learning, light adaptation, and a 171% pair-pulse-facilitation index, enabling the synapse array to achieve image recognition enhancement (92%) and moving object detection.
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Affiliation(s)
- Xuemei Dong
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Chen Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Keyuan Pan
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Yinxiang Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zicheng Zhang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zixi He
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Bin Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zhe Zhou
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Yueyue Wu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Dengfeng Zhang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Hongchao Sun
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Xinkai Qian
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Min Xu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & EngineeringNorthwestern Polytechnical UniversityXi'an710072China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
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31
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Wang J, Zhou W, Liu Y, He G, Yang Y. Biomimetic Compound Eyes with Gradient Ommatidium Arrays. ACS APPLIED MATERIALS & INTERFACES 2023; 15:44503-44512. [PMID: 37675845 DOI: 10.1021/acsami.3c08063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Compound eyes are high-performing natural optical perception systems with compact configurations, generating extensive research interest. Existing compound eye systems are often combinations of simple uniform microlens arrays; there are still challenges in making more ommatidia on the compound eye surface to focus to the same plane. Here, a biomimetic gradient compound eye is presented by artificially mimicking dragonflies. The multiple replication process efficiently endows compound eyes with the gradient characteristics of dragonfly compound eyes. Experimental results show that the manufactured compound eye allows multifocus imaging by virtue of the gradient ommatidium array arranged closely in a honeycomb pattern while ensuring excellent optical properties and compact configurations. Thousands of ommatidia showing a gradient trend at the millimeter scale while remaining relatively uniform at the micron scale have gradient focal lengths ranging from 260 to 450 μm. This gradient compound eye allows more ommatidia to focus on the same plane than traditional uniform compound eyes, which have experimentally been shown to capture more than 1100 in-plane clear images simultaneously, promising potential applications in micro-optical devices, optical imaging, and biochemical sensing.
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Affiliation(s)
- Jian Wang
- School of Physics & Technology, Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, Department of Clinical Laboratory, Institute of Medicine and Physics, Renmin Hospital, Wuhan University, Wuhan 430072, China
- Shenzhen Research Institute, Wuhan University, Shenzhen 518000, China
| | - Wenna Zhou
- School of Physics & Technology, Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, Department of Clinical Laboratory, Institute of Medicine and Physics, Renmin Hospital, Wuhan University, Wuhan 430072, China
- Shenzhen Research Institute, Wuhan University, Shenzhen 518000, China
| | - Yantong Liu
- School of Physics & Technology, Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, Department of Clinical Laboratory, Institute of Medicine and Physics, Renmin Hospital, Wuhan University, Wuhan 430072, China
- Shenzhen Research Institute, Wuhan University, Shenzhen 518000, China
| | - Guoqing He
- School of Physics & Technology, Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, Department of Clinical Laboratory, Institute of Medicine and Physics, Renmin Hospital, Wuhan University, Wuhan 430072, China
- Shenzhen Research Institute, Wuhan University, Shenzhen 518000, China
| | - Yi Yang
- School of Physics & Technology, Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, Department of Clinical Laboratory, Institute of Medicine and Physics, Renmin Hospital, Wuhan University, Wuhan 430072, China
- Shenzhen Research Institute, Wuhan University, Shenzhen 518000, China
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32
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Lee J, Jeong BH, Kamaraj E, Kim D, Kim H, Park S, Park HJ. Light-enhanced molecular polarity enabling multispectral color-cognitive memristor for neuromorphic visual system. Nat Commun 2023; 14:5775. [PMID: 37723149 PMCID: PMC10507016 DOI: 10.1038/s41467-023-41419-y] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 09/01/2023] [Indexed: 09/20/2023] Open
Abstract
An optoelectronic synapse having a multispectral color-discriminating ability is an essential prerequisite to emulate the human retina for realizing a neuromorphic visual system. Several studies based on the three-terminal transistor architecture have shown its feasibility; however, its implementation with a two-terminal memristor architecture, advantageous to achieving high integration density as a simple crossbar array for an ultra-high-resolution vision chip, remains a challenge. Furthermore, regardless of the architecture, it requires specific material combinations to exhibit the photo-synaptic functionalities, and thus its integration into various systems is limited. Here, we suggest an approach that can universally introduce a color-discriminating synaptic functionality into a two-terminal memristor irrespective of the kinds of switching medium. This is possible by simply introducing the molecular interlayer with long-lasting photo-enhanced dipoles that can adjust the resistance of the memristor at the light-irradiation. We also propose the molecular design principle that can afford this feature. The optoelectronic synapse array having a color-discriminating functionality is confirmed to improve the inference accuracy of the convolutional neural network for the colorful image recognition tasks through a visual pre-processing. Additionally, the wavelength-dependent optoelectronic synapse can also be leveraged in the design of a light-programmable reservoir computing system.
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Affiliation(s)
- Jongmin Lee
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Bum Ho Jeong
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Eswaran Kamaraj
- Department of Chemistry, Kongju National University, Kongju, 32588, Republic of Korea
| | - Dohyung Kim
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Hakjun Kim
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Sanghyuk Park
- Department of Chemistry, Kongju National University, Kongju, 32588, Republic of Korea.
| | - Hui Joon Park
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea.
- Hanyang Institute of Smart Semiconductor, Seoul, 04763, Republic of Korea.
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33
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Wang X, Ran Y, Li X, Qin X, Lu W, Zhu Y, Lu G. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration. MATERIALS HORIZONS 2023; 10:3269-3292. [PMID: 37312536 DOI: 10.1039/d3mh00216k] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The investigation of transistor-based artificial synapses in bioinspired information processing is undergoing booming exploration, and is the stable building block for brain-like computing. Given that the storage and computing separation architecture of von Neumann construction is not conducive to the current explosive information processing, it is critical to accelerate the connection between hardware systems and software simulations of intelligent synapses. So far, various works based on a transistor-based synaptic system successfully simulated functions similar to biological nerves in the human brain. However, the influence of the semiconductor and the device structural design on synaptic properties is still poorly linked. This review concretely emphasizes the recent advances in the novel structure design of semiconductor materials and devices used in synaptic transistors, not only from a single multifunction synaptic device but also to system application with various connected routes and related working mechanisms. Finally, crises and opportunities in transistor-based synaptic interconnection are discussed and predicted.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Xiaoqian Li
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, Shandong Province, 250100, P. R. China
| | - Xinsu Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
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34
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Yan Y, Yu N, Yu Z, Su Y, Chen J, Xiang T, Han Y, Wang J. Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS 2 van der Waals Heterostructure under UV-Ozone Treatment. SMALL METHODS 2023; 7:e2201679. [PMID: 36929317 DOI: 10.1002/smtd.202201679] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 02/23/2023] [Indexed: 06/09/2023]
Abstract
Memristive switching devices with electrically and optically invoked synaptic behaviors show great promise in constructing an artificial biological visual system. Through rational design and integration, 2D materials and their van der Waals (vdW) heterostructures can be applied to realize multifunctional optoelectronic devices. Here, a multifunctional optoelectronic synaptic memtransistor based on a SnSe/MoS2 vdW p-n heterojunction to simulate the human biological visual system is reported. By employing simple mild UV-ozone treatment, the device exhibits reversible resistive switching (RS) behavior with switching ratio up to 103 . The retina-like selective response to different input light wavelengths is activated, as well as programmable multilevel resistance states and long-term synaptic plasticity. Moreover, memory and logic functions analogous to those found in the visual cortex of the brain are performed by controlling the optical and electrical input signals. This work proposes a feasible strategy to modulate RS in vdW heterostructures for memristive devices, which show significant potential for neuromorphic processing.
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Affiliation(s)
- Yuling Yan
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Niannian Yu
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Ziyan Yu
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Yupeng Su
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Jiawei Chen
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Tao Xiang
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Yuenan Han
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Jiafu Wang
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
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35
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Huang M, Ali W, Yang L, Huang J, Yao C, Xie Y, Sun R, Zhu C, Tan Y, Liu X, Li S, Li Z, Pan A. Multifunctional Optoelectronic Synapses Based on Arrayed MoS 2 Monolayers Emulating Human Association Memory. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300120. [PMID: 37058134 DOI: 10.1002/advs.202300120] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/01/2023] [Indexed: 06/04/2023]
Abstract
Optoelectronic synaptic devices integrating light-perception and signal-storage functions hold great potential in neuromorphic computing for visual information processing, as well as complex brain-like learning, memorizing, and reasoning. Herein, the successful growth of MoS2 monolayer arrays assisted by gold nanorods guided precursor nucleation is demonstrated. Optical, spectral, and morphology characterizations of MoS2 prove that arrayed flakes are homogeneous monolayers, and they are further fabricated as optoelectronic devices showing featured photocurrent loops and stable optical responses. Typical synaptic behaviors of photo-induced short-term potentiation, long-term potentiation, and paired pulse facilitation are recorded under different light stimulations of 450, 532, and 633 nm lasers at various excitation powers. A visual sensing system consisting of 5 × 6 pixels is constructed to simulate the light-sensing image mapped by forgetting curves in real time. Moreover, the system presents the ability of utilizing associated images to restore vague and incomplete memories, which successfully mimics human intelligent behaviors of association memory and logical reasoning. The work emulates the brain-like artificial intelligence using arrayed 2D semiconductors, which paves an avenue to achieve smart retina and complex brain-like system.
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Affiliation(s)
- Ming Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Wajid Ali
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Liuli Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jianhua Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Yunfei Xie
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ronghuan Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Yike Tan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
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Long Z, Qiu X, Chan CLJ, Sun Z, Yuan Z, Poddar S, Zhang Y, Ding Y, Gu L, Zhou Y, Tang W, Srivastava AK, Yu C, Zou X, Shen G, Fan Z. A neuromorphic bionic eye with filter-free color vision using hemispherical perovskite nanowire array retina. Nat Commun 2023; 14:1972. [PMID: 37031227 PMCID: PMC10082761 DOI: 10.1038/s41467-023-37581-y] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 03/21/2023] [Indexed: 04/10/2023] Open
Abstract
Spherical geometry, adaptive optics, and highly dense network of neurons bridging the eye with the visual cortex, are the primary features of human eyes which enable wide field-of-view (FoV), low aberration, excellent adaptivity, and preprocessing of perceived visual information. Therefore, fabricating spherical artificial eyes has garnered enormous scientific interest. However, fusing color vision, in-device preprocessing and optical adaptivity into spherical artificial eyes has always been a tremendous challenge. Herein, we demonstrate a bionic eye comprising tunable liquid crystal optics, and a hemispherical neuromorphic retina with filter-free color vision, enabled by wavelength dependent bidirectional synaptic photo-response in a metal-oxide nanotube/perovskite nanowire hybrid structure. Moreover, by tuning the color selectivity with bias, the device can reconstruct full color images. This work demonstrates a unique approach to address the color vision and optical adaptivity issues associated with artificial eyes that can bring them to a new level approaching their biological counterparts.
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Affiliation(s)
- Zhenghao Long
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiao Qiu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Chak Lam Jonathan Chan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zhibo Sun
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zhengnan Yuan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yuting Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yucheng Ding
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Leilei Gu
- Qingyuan Research Institute, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Road, 200240, Shanghai, China
| | - Yu Zhou
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Wenying Tang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Abhishek Kumar Srivastava
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Cunjiang Yu
- Department of Engineering Science and Mechanics, Department of Biomedical Engineering, Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
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Hwang Y, Park B, Hwang S, Choi SW, Kim HS, Kim AR, Choi JW, Yoon J, Kwon JD, Kim Y. A Bioinspired Ultra Flexible Artificial van der Waals 2D-MoS 2 Channel/LiSiO x Solid Electrolyte Synapse Arrays via Laser-Lift Off Process for Wearable Adaptive Neuromorphic Computing. SMALL METHODS 2023:e2201719. [PMID: 36960927 DOI: 10.1002/smtd.202201719] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2023] [Revised: 02/06/2023] [Indexed: 06/18/2023]
Abstract
Wearable electronic devices with next-generation biocompatible, mechanical, ultraflexible, and portable sensors are a fast-growing technology. Hardware systems enabling artificial neural networks while consuming low power and processing massive in situ personal data are essential for adaptive wearable neuromorphic edging computing. Herein, the development of an ultraflexible artificial-synaptic array device with concrete-mechanical cyclic endurance consisting of a novel heterostructure with an all-solid-state 2D MoS2 channel and LiSiOx (lithium silicate) is demonstrated. Enabled by the sequential fabrication process of all layers, by excluding the transfer process, artificial van der Waals devices combined with the 2D-MoS2 channel and LiSiOx solid electrolyte exhibit excellent neuromorphic synaptic characteristics with a nonlinearity of 0.55 and asymmetry ratio of 0.22. Based on the excellent flexibility of colorless polyimide substrates and thin-layered structures, the fabricated flexible neuromorphic synaptic devices exhibit superior long-term potentiation and long-term depression cyclic endurance performance, even when bent over 700 times or on curved surfaces with a diameter of 10 mm. Thus, a high classification accuracy of 95% is achieved without any noticeable performance degradation in the Modified National Institute of Standards and Technology. These results are promising for the development of personalized wearable artificial neural systems in the future.
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Affiliation(s)
- Yunjeong Hwang
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
| | - Byeongjin Park
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Seungkwon Hwang
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Soo-Won Choi
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Han Seul Kim
- Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, 28644, Republic of Korea
| | - Ah Ra Kim
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
| | - Jin Woo Choi
- Department of Data Information and Physics, Kongju National University, 56 Gongjudaehak-ro, Gongju, Chungcheongnam-do, 32588, Republic ofKorea
| | - Jongwon Yoon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
| | - Jung-Dae Kwon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
| | - Yonghun Kim
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea
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38
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Lee M, Seung H, Kwon JI, Choi MK, Kim DH, Choi C. Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data. ACS OMEGA 2023; 8:5209-5224. [PMID: 36816688 PMCID: PMC9933102 DOI: 10.1021/acsomega.3c00440] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
With the advance in information technologies involving machine vision applications, the demand for energy- and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision system have inherent limitations in terms of power consumption and data latency owing to the physical isolation of image sensors and processors. Meanwhile, synaptic optoelectronic devices that exhibit photoresponse similar to the behaviors of the human synapse enable in-sensor preprocessing, which makes the front-end part of the image recognition process more efficient. Herein, we review recent progress in the development of synaptic optoelectronic devices using functional nanomaterials and their unique interfacial characteristics. First, we provide an overview of representative functional nanomaterials and device configurations for the synaptic optoelectronic devices. Then, we discuss the underlying physics of each nanomaterial in the synaptic optoelectronic device and explain related device characteristics that allow for the in-sensor preprocessing. We also discuss advantages achieved by the application of the synaptic optoelectronic devices to image preprocessing, such as contrast enhancement and image filtering. Finally, we conclude this review and present a short prospect.
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Affiliation(s)
- Minkyung Lee
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| | - Hyojin Seung
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
| | - Jong Ik Kwon
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Moon Kee Choi
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Dae-Hyeong Kim
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
- Department
of Materials Science and Engineering, Seoul
National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
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39
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Hu Y, Yang H, Huang J, Zhang X, Tan B, Shang H, Zhang S, Feng W, Zhu J, Zhang J, Shuai Y, Jia D, Zhou Y, Hu P. Flexible Optical Synapses Based on In 2Se 3/MoS 2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55839-55849. [PMID: 36511344 DOI: 10.1021/acsami.2c19097] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Near-infrared (NIR) synaptic devices integrate NIR optical sensitivity and synaptic plasticity, emulating the basic biomimetic function of the human visual system and showing great potential in NIR artificial vision systems. However, the lack of semiconductor materials with appropriate band gaps for NIR photodetection and effective strategies for fabricating devices with synaptic behaviors limit the further development of NIR synaptic devices. Here, a two-terminal NIR synaptic device consisting of the In2Se3/MoS2 heterojunction has been constructed, and it exhibits fundamental synaptic functions. The reduced band gap and potential barrier of In2Se3/MoS2 heterojunctions are essential for NIR synaptic plasticity. In addition, the NIR synaptic properties of In2Se3/MoS2 heterojunctions under strain have been studied systematically. The ΔEPSC of the In2Se3/MoS2 synaptic device can be improved from 38.4% under no strain to 49.0% under a 0.54% strain with a 1060 nm illumination for 1 s at 100 mV. Furthermore, the artificial NIR vision system consisting of a 10 × 10 In2Se3/MoS2 device array has been fabricated, exhibiting image sensing, learning, and storage functions under NIR illumination. This research provides new ideas for the design of flexible NIR synaptic devices based on 2D materials and presents many opportunities in artificial intelligence and NIR vision systems.
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Affiliation(s)
- Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Hongying Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Jingtao Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Xin Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Biying Tan
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Huiming Shang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Shichao Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science, Northeast Forestry University, Harbin150040, China
| | - Jingchuan Zhu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Jia Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin150001, China
| | - Dechang Jia
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Yu Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
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Liu S, Wang J, Shao J, Ouyang D, Zhang W, Liu S, Li Y, Zhai T. Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200734. [PMID: 35501143 DOI: 10.1002/adma.202200734] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit-level, it is necessary to develop advanced nanopatterning methods to obtain high-quality, wafer-scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large-scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.
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Affiliation(s)
- Shenghong Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jing Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jiefan Shao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Zhu C, Liu H, Wang W, Xiang L, Jiang J, Shuai Q, Yang X, Zhang T, Zheng B, Wang H, Li D, Pan A. Optical synaptic devices with ultra-low power consumption for neuromorphic computing. LIGHT, SCIENCE & APPLICATIONS 2022; 11:337. [PMID: 36443284 PMCID: PMC9705294 DOI: 10.1038/s41377-022-01031-z] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 10/31/2022] [Accepted: 11/01/2022] [Indexed: 05/31/2023]
Abstract
Brain-inspired neuromorphic computing, featured by parallel computing, is considered as one of the most energy-efficient and time-saving architectures for massive data computing. However, photonic synapse, one of the key components, is still suffering high power consumption, potentially limiting its applications in artificial neural system. In this study, we present a BP/CdS heterostructure-based artificial photonic synapse with ultra-low power consumption. The device shows remarkable negative light response with maximum responsivity up to 4.1 × 108 A W-1 at VD = 0.5 V and light power intensity of 0.16 μW cm-2 (1.78 × 108 A W-1 on average), which further enables artificial synaptic applications with average power consumption as low as 4.78 fJ for each training process, representing the lowest among the reported results. Finally, a fully-connected optoelectronic neural network (FONN) is simulated with maximum image recognition accuracy up to 94.1%. This study provides new concept towards the designing of energy-efficient artificial photonic synapse and shows great potential in high-performance neuromorphic vision systems.
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Affiliation(s)
- Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Wenqiang Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Li Xiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China.
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China.
| | - Jie Jiang
- School of Physics and Electronics, Central South University, 410083, Changsha, China
| | - Qin Shuai
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Tian Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Hui Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China.
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China.
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China.
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42
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Liu K, Wang X, Su H, Chen X, Wang D, Guo J, Shao L, Bao W, Chen H. Large-Scale MoS 2 Pixel Array for Imaging Sensor. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4118. [PMID: 36500741 PMCID: PMC9739261 DOI: 10.3390/nano12234118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 11/15/2022] [Accepted: 11/18/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional molybdenum disulfide (MoS2) has been extensively investigated in the field of optoelectronic devices. However, most reported MoS2 phototransistors are fabricated using the mechanical exfoliation method to obtain micro-scale MoS2 flakes, which is laboratory- feasible but not practical for the future industrial fabrication of large-scale pixel arrays. Recently, wafer-scale MoS2 growth has been rapidly developed, but few results of uniform large-scale photoelectric devices were reported. Here, we designed a 12 × 12 pixels pixel array image sensor fabricated on a 2 cm × 2 cm monolayer MoS2 film grown by chemical vapor deposition (CVD). The photogating effect induced by the formation of trap states ensures a high photoresponsivity of 364 AW-1, which is considerably superior to traditional CMOS sensors (≈0.1 AW-1). Experimental results also show highly uniform photoelectric properties in this array. Finally, the concatenated image obtained by laser lighting stencil and photolithography mask demonstrates the promising potential of 2D MoS2 for future optoelectrical applications.
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Affiliation(s)
- Kang Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xinyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Hesheng Su
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Die Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Jing Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Lei Shao
- School of Electronic Information, Soochow University, Suzhou 215006, China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Honglei Chen
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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43
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Wang X, Lu W, Wei P, Qin Z, Qiao N, Qin X, Zhang M, Zhu Y, Bu L, Lu G. Artificial Tactile Recognition Enabled by Flexible Low-Voltage Organic Transistors and Low-Power Synaptic Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48948-48959. [PMID: 36269162 DOI: 10.1021/acsami.2c14625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The advancement of self-powered intelligent strain systems for human-computer interaction is crucial toward wearable and energy-saving applications. Simultaneously, lowering operating voltage and thus reducing power consumption are of particular interests. A brain-like smart synaptic hardware system is considered as a promising candidate for low-power, parallel computing and learning processes. However, the combination of low-voltage organic transistors and energy efficient smart synapse hardware systems driven by a tactile signal has been hindered by the limited materials and technology. Here, by employing an elastomeric copolymer poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) with a high HFP content of 25 mol %, flexible, low-voltage transistors (|VG| ≤ 3 V) and a low energy consumption synapse ≤ 9.2 × 10-17 J are devised simultaneously, along with the lowest quality factor (R = Pw × VG, 2.76 × 10-16 J V). Furthermore, based on the low voltage and low power consumption characteristics, flexible artificial tactile recognition system and Morse code recognition are established without any computing supporting. Mechanical flexibility, cycling stability, image contrast enhancement functions, and simulated pattern recognition accuracy of the multilayer perceptron neural network are also simulated. This work recommends a route of exploiting low voltage, low power consumption synaptic systems and smart human-machine interfaces with low energy loss based on flexible organic synaptic transistors.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
| | - Peng Wei
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
| | - Nan Qiao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
| | - Xinsu Qin
- School of Chemistry, Xi'an Jiaotong University, Xi'an710049, China
| | - Meng Zhang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an710054, China
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