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Ding G, Li H, Zhao J, Zhou K, Zhai Y, Lv Z, Zhang M, Yan Y, Han ST, Zhou Y. Nanomaterials for Flexible Neuromorphics. Chem Rev 2024. [PMID: 39499851 DOI: 10.1021/acs.chemrev.4c00369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
The quest to imbue machines with intelligence akin to that of humans, through the development of adaptable neuromorphic devices and the creation of artificial neural systems, has long stood as a pivotal goal in both scientific inquiry and industrial advancement. Recent advancements in flexible neuromorphic electronics primarily rely on nanomaterials and polymers owing to their inherent uniformity, superior mechanical and electrical capabilities, and versatile functionalities. However, this field is still in its nascent stage, necessitating continuous efforts in materials innovation and device/system design. Therefore, it is imperative to conduct an extensive and comprehensive analysis to summarize current progress. This review highlights the advancements and applications of flexible neuromorphics, involving inorganic nanomaterials (zero-/one-/two-dimensional, and heterostructure), carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, and polymers. Additionally, a comprehensive comparison and summary of the structural compositions, design strategies, key performance, and significant applications of these devices are provided. Furthermore, the challenges and future directions pertaining to materials/devices/systems associated with flexible neuromorphics are also addressed. The aim of this review is to shed light on the rapidly growing field of flexible neuromorphics, attract experts from diverse disciplines (e.g., electronics, materials science, neurobiology), and foster further innovation for its accelerated development.
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Affiliation(s)
- Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Hang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, PR China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom 999077, Hong Kong SAR PR China
| | - Ye Zhou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
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2
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Sun H, Tian H, Hu Y, Cui Y, Chen X, Xu M, Wang X, Zhou T. Bio-Plausible Multimodal Learning with Emerging Neuromorphic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2406242. [PMID: 39258724 DOI: 10.1002/advs.202406242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2024] [Revised: 08/02/2024] [Indexed: 09/12/2024]
Abstract
Multimodal machine learning, as a prospective advancement in artificial intelligence, endeavors to emulate the brain's multimodal learning abilities with the objective to enhance interactions with humans. However, this approach requires simultaneous processing of diverse types of data, leading to increased model complexity, longer training times, and higher energy consumption. Multimodal neuromorphic devices have the capability to preprocess spatio-temporal information from various physical signals into unified electrical signals with high information density, thereby enabling more biologically plausible multimodal learning with low complexity and high energy-efficiency. Here, this work conducts a comparison between the expression of multimodal machine learning and multimodal neuromorphic computing, followed by an overview of the key characteristics associated with multimodal neuromorphic devices. The bio-plausible operational principles and the multimodal learning abilities of emerging devices are examined, which are classified into heterogeneous and homogeneous multimodal neuromorphic devices. Subsequently, this work provides a detailed description of the multimodal learning capabilities demonstrated by neuromorphic circuits and their respective applications. Finally, this work highlights the limitations and challenges of multimodal neuromorphic computing in order to hopefully provide insight into potential future research directions.
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Affiliation(s)
- Haonan Sun
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Haoxiang Tian
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yihao Hu
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yi Cui
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xinrui Chen
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Tao Zhou
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
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Zhang S, Chen R, Kong D, Chen Y, Liu W, Jiang D, Zhao W, Chang C, Yang Y, Liu Y, Wei D. Photovoltaic nanocells for high-performance large-scale-integrated organic phototransistors. NATURE NANOTECHNOLOGY 2024; 19:1323-1332. [PMID: 38965348 DOI: 10.1038/s41565-024-01707-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 05/30/2024] [Indexed: 07/06/2024]
Abstract
A high-performance large-scale-integrated organic phototransistor needs a semiconductor layer that maintains its photoelectric conversion ability well during high-resolution pixelization. However, lacking a precise design for the nanoscale structure, a trade-off between photoelectric performance and device miniaturization greatly limits the success in commercial application. Here we demonstrate a photovoltaic-nanocell enhancement strategy, which overcomes the trade-off and enables high-performance organic phototransistors at a level beyond large-scale integration. Embedding a core-shell photovoltaic nanocell based on perovskite quantum dots in a photocrosslinkable organic semiconductor, ultralarge-scale-integrated (>221 units) imaging chips are manufactured using photolithography. 27 million pixels are interconnected and the pixel density is 3.1 × 106 units cm-2, at least two orders of magnitude higher than in existing organic imaging chips and equivalent to the latest commercial full-frame complementary metal-oxide-semiconductor camera chips. The embedded photovoltaic nanocells induce an in situ photogating modulation and enable photoresponsivity and detectivity of 6.8 × 106 A W-1 and 1.1 × 1013 Jones (at 1 Hz), respectively, achieving the highest values of organic imaging chips at large-scale or higher integration. In addition, a very-large-scale-integrated (>216 units) stretchable biomimetic retina based on photovoltaic nanocells is manufactured for neuromorphic imaging recognition with not only resolution but also photoresponsivity and power consumption approaching those of the biological counterpart.
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Affiliation(s)
- Shen Zhang
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Renzhong Chen
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Derong Kong
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Yiheng Chen
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Wentao Liu
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Dingding Jiang
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Weiyu Zhao
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Cheng Chang
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China
- Department of Macromolecular Science, Fudan University, Shanghai, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
| | - Yingguo Yang
- School of Microelectronics, Fudan University, Shanghai, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China
- Institute of Chemistry, Chinese Academy of Science, Beijing, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, China.
- Department of Macromolecular Science, Fudan University, Shanghai, China.
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, China.
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Liu X, Sun C, Ye X, Zhu X, Hu C, Tan H, He S, Shao M, Li RW. Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311472. [PMID: 38421081 DOI: 10.1002/adma.202311472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.
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Affiliation(s)
- Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cong Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Shang He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjie Shao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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Zhao W, Lin Z, Chen H, Xu S, Chen E, Guo T, Ye Y, Chen H. Perovskite-Doped Modulated Color-Selective Photosynaptic Transistors for Target Object Recognition. NANO LETTERS 2024; 24:9937-9945. [PMID: 39092599 DOI: 10.1021/acs.nanolett.4c02447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
The processing of multicolor noisy images in visual neuromorphic devices requires selective absorption at specific wavelengths; however, it is difficult to achieve this because the spectral absorption range of the device is affected by the type of material. Surprisingly, the absorption range of perovskite materials can be adjusted by doping. Herein, a CdCl2 co-doped CsPbBr3 nanocrystal-based photosensitive synaptic transistor (PST) is reported. By decreasing the doping concentration, the response of the PST to short-wavelength light is gradually enhanced, and even weak light of 40 μW·cm-2 can be detected. Benefiting from the excellent color selectivity of the PST device, the device array is applied to feature extraction of target blue items and removal of red and green noise, which results in the recognition accuracy of 95% for the noisy MNIST data set. This work provides new ideas for the application of novel transistors integrating sensors and storage computing.
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Affiliation(s)
- Wenxiao Zhao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Zexi Lin
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Hao Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Sheng Xu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Enguo Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Yun Ye
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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Tsai CH, Chen WC, Lin YC, Huang YH, Lin KW, Wu JY, Satoh T, Chen WC, Kuo CC. Ultralow-Energy-Consumption Photosynaptic Transistor Utilizing Conjugated Polymers/Perovskite Quantum Dots Nanocomposites With Ligand Density Optimization. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402567. [PMID: 39132749 DOI: 10.1002/smll.202402567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 07/18/2024] [Indexed: 08/13/2024]
Abstract
The photosynaptic transistor stands as a promising contender for overcoming the von Neumann bottleneck in the realm of photo-communication. In this context, photonic synaptic transistors is developed through a straightforward solution process, employing an organic semiconducting polymer with pendant-naphthalene-containing side chains (PDPPNA) in combination with ligand-density-engineered CsPbBr3 perovskite quantum dots (PQDs). This fabrication approach allows the devices to emulate fundamental synaptic behaviors, encompassing excitatory postsynaptic current, paired-pulse facilitation, the transition from short-to-long-term memory, and the concept of "learning experience." Notably, the phototransistor, incorporating the blend of the PDPPNA and CsPbBr3 PQDs washed with ethyl acetate, achieved an exceptional memory ratio of 104. Simultaneously, the same device exhibited an impressive paired-pulse facilitation ratio of 223% at a moderate operating voltage of -4 V and an extraordinarily low energy consumption of 0.215 aJ at an ultralow operating voltage of -0.1 mV. Consequently, these low-voltage synaptic devices, constructed with a pendant side-chain engineering of organic semiconductors and a ligand density engineering of PQDs through a simple fabrication process, exhibit substantial potential for replicating the visual memory capabilities of the human brain.
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Affiliation(s)
- Cheng-Hang Tsai
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Wei-Cheng Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Yu-Hang Huang
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Kai-Wei Lin
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Jing-Yang Wu
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
- List Sustainable Digital Transformation Catalyst Collaboration Research Platform (ICReDD List-PF), Institute for Chemical Reaction Design and Discovery, Hokkaido University, Sapporo, 001-0021, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Chi-Ching Kuo
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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7
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Wu FC, Chen CY, Wang YW, You CB, Wang LY, Ruan J, Chou WY, Lai WC, Cheng HL. Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:41211-41222. [PMID: 39054697 PMCID: PMC11310909 DOI: 10.1021/acsami.4c05966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 06/03/2024] [Accepted: 07/17/2024] [Indexed: 07/27/2024]
Abstract
Organic synaptic transistors are a promising technology for advanced electronic devices with simultaneous computing and memory functions and for the application of artificial neural networks. In this study, the neuromorphic electrical characteristics of organic synaptic electrolyte-gated transistors are correlated with the microstructural and interfacial properties of the active layers. This is accomplished by utilizing a semiconducting/insulating polyblend-based pseudobilayer with embedded source and drain electrodes, referred to as PB-ESD architecture. Three variations of poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA) PB-ESD-based organic synaptic transistors are fabricated, each exhibiting distinct microstructures and electrical characteristics, thus serving excellent samples for exploring the critical factors influencing neuro-electrical properties. Poor microstructures of P3HT within the active layer and a flat active layer/ion-gel interface correspond to typical neuromorphic behaviors such as potentiated excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term potentiation (STP). Conversely, superior microstructures of P3HT and a rough active layer/ion-gel interface correspond to significantly higher channel conductance and enhanced EPSC and PPF characteristics as well as long-term potentiation behavior. Such devices were further applied to the simulation of neural networks, which produced a good recognition accuracy. However, excessive PMMA penetration into the P3HT conducting channel leads to features of a depressed EPSC and paired-pulse depression, which are uncommon in organic synaptic transistors. The inclusion of a second gate electrode enables the as-prepared organic synaptic transistors to function as two-input synaptic logic gates, performing various logical operations and effectively mimicking neural modulation functions. Microstructure and interface engineering is an effective method to modulate the neuromorphic behavior of organic synaptic transistors and advance the development of bionic artificial neural networks.
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Affiliation(s)
- Fu-Chiao Wu
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Chun-Yu Chen
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Yu-Wu Wang
- Institute
of Photonics, National Changhua University
of Education, Changhua 500, Taiwan
| | - Chun-Bin You
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Li-Yun Wang
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Jrjeng Ruan
- Department
of Materials Science and Engineering, National
Cheng Kung University, Tainan 701, Taiwan
| | - Wei-Yang Chou
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Wei-Chih Lai
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Horng-Long Cheng
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
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8
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Sui N, Ji Y, Li M, Zheng F, Shao S, Li J, Liu Z, Wu J, Zhao J, Li L. Photoprogrammed Multifunctional Optoelectronic Synaptic Transistor Arrays Based on Photosensitive Polymer-Sorted Semiconducting Single-Walled Carbon Nanotubes for Image Recognition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401794. [PMID: 38828719 PMCID: PMC11304235 DOI: 10.1002/advs.202401794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 04/12/2024] [Indexed: 06/05/2024]
Abstract
The development of neuromorphic optoelectronic systems opens up the possibility of the next generation of artificial vision. In this work, the novel broadband (from 365 to 940 nm) and multilevel storage optoelectronic synaptic thin-film transistor (TFT) arrays are reported using the photosensitive conjugated polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)], F8T2) sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) as channel materials. The broadband synaptic responses are inherited to absorption from both photosensitive F8T2 and sorted sc-SWCNTs, and the excellent optoelectronic synaptic behaviors with 200 linearly increasing conductance states and long retention time > 103 s are attributed to the superior charge trapping at the AlOx dielectric layer grown by atomic layer deposition. Furthermore, the synaptic TFTs can achieve IOn/IOff ratios up to 106 and optoelectronic synaptic plasticity with the low power consumption (59 aJ per single pulse), which can simulate not only basic biological synaptic functions but also optical write and electrical erase, multilevel storage, and image recognition. Further, a novel Spiking Neural Network algorithm based on hardware characteristics is designed for the recognition task of Caltech 101 dataset and multiple features of the images are successfully extracted with higher accuracy (97.92%) of the recognition task from the multi-frequency curves of the optoelectronic synaptic devices.
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Affiliation(s)
- Nianzi Sui
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Yixi Ji
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Min Li
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Fanyuan Zheng
- Department of Mechanical EngineeringThe University of Hong KongPokfulam RoadHong Kong999077P. R. China
| | - Shuangshuang Shao
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Jiaqi Li
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Zhaoxin Liu
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Jinjian Wu
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Jianwen Zhao
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Lain‐Jong Li
- Department of Mechanical EngineeringThe University of Hong KongPokfulam RoadHong Kong999077P. R. China
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9
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Guo F, Liu Y, Zhang M, Yu W, Li S, Zhang B, Hu B, Li S, Sun A, Jiang J, Hao L. VO 2/MoO 3 Heterojunctions Artificial Optoelectronic Synapse Devices for Near-Infrared Optical Communication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310767. [PMID: 38456772 DOI: 10.1002/smll.202310767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 02/23/2024] [Indexed: 03/09/2024]
Abstract
Artificial optoelectronic synapses (OES) have attracted extensive attention in brain-inspired information processing and neuromorphic computing. However, OES at near-infrared wavelengths have rarely been reported, seriously limiting the application in modern optical communication. Herein, high-performance near-infrared OES devices based on VO2/MoO3 heterojunctions are presented. The textured MoO3 films are deposited on the sputtered VO2 film by using the glancing-angle deposition technique to form a heterojunction device. Through tuning the oxygen defects in the VO2 film, the fabricated VO2/MoO3 heterojunction exhibits versatile electrical synaptic functions. Benefiting from the highly efficient light harvesting and the unique interface effect, the photonic synaptic characteristics, mainly including the short/long-term plasticity and learning experience behavior are successfully realized at the O (1342 nm) and C (1550 nm) optical communication wavebands. Moreover, a single OES device can output messages accurately by converting light signals of the Morse code to distinct synaptic currents. More importantly, a 3 × 3 artificial OES array is constructed to demonstrate the impressive image perceiving and learning capabilities. This work not only indicates the feasibility of defect and interface engineering in modulating the synaptic plasticity of OES devices, but also provides effective strategies to develop advanced artificial neuromorphic visual systems for next-generation optical communication systems.
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Affiliation(s)
- Fuhai Guo
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Shuangshuang Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Ankai Sun
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Jianyu Jiang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
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10
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Wi S, Jeong M, Lee K, Lee Y. Optoelectronic Synapse Behaviors in Tb 3+ and Al 3+ Co-Doped CaSnO 3 with Long-Persistent Luminescence. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2402848. [PMID: 38923300 PMCID: PMC11348126 DOI: 10.1002/advs.202402848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Revised: 05/22/2024] [Indexed: 06/28/2024]
Abstract
Neuromorphic computation draws inspiration from the remarkable features of the human brain including low energy consumption, parallelism, adaptivity, cognitive functions, and learning ability. These qualities hold the promise of unlocking groundbreaking computational techniques that surpass the limitations of traditional computing systems. This paper reports a remarkable photo-synaptic behavior in the field of rare earth ion-doped luminescent oxides by using long-persistent luminescence (LPL). This system utilizes electron trap states to regulate the synaptic behavior, operating through a fundamentally different mechanism from that of electronic-based synaptic devices. To realize this strategy, Tb3+ doped CaSnO3, which shows a significant LPL property under UV-light excitation, is prepared. The luminescent system shows key neuromorphic characteristics such as paired-pulse facilitation, pulse-number/timing dependent potentiation, and pulse-number/timing dependent short- to long-term plasticity transition, which are required for realizing synaptic devices. This feature expands the way for advanced neuromorphic technologies employing light stimuli.
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Affiliation(s)
- Sangwon Wi
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
| | - Minjae Jeong
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
| | - Kwanchul Lee
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
| | - Yunsang Lee
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
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11
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Yao J, Wang Q, Zhang Y, Teng Y, Li J, Zhao P, Zhao C, Hu Z, Shen Z, Liu L, Tian D, Qiu S, Wang Z, Kang L, Li Q. Ultra-low power carbon nanotube/porphyrin synaptic arrays for persistent photoconductivity and neuromorphic computing. Nat Commun 2024; 15:6147. [PMID: 39034334 PMCID: PMC11271480 DOI: 10.1038/s41467-024-50490-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 07/10/2024] [Indexed: 07/23/2024] Open
Abstract
Developing devices with a wide-temperature range persistent photoconductivity (PPC) and ultra-low power consumption remains a significant challenge for optical synaptic devices used in neuromorphic computing. By harnessing the PPC properties in materials, it can achieve optical storage and neuromorphic computing, surpassing the von Neuman architecture-based systems. However, previous research implemented PPC required additional gate voltages and low temperatures, which need additional energy consumption and PPC cannot be achieved across a wide temperature range. Here, we fabricated a simple heterojunctions using zinc(II)-meso-tetraphenyl porphyrin (ZnTPP) and single-walled carbon nanotubes (SWCNTs). By leveraging the strong binding energy at the heterojunction interface and the unique band structure, the heterojunction achieved PPC over an exceptionally wide temperature range (77 K-400 K). Remarkably, it demonstrated nonvolatile storage for up to 2×104 s, without additional gate voltage. The minimum energy consumption for each synaptic event is as low as 6.5 aJ. Furthermore, we successfully demonstrate the feasibility to manufacture a flexible wafer-scale array utilizing this heterojunction. We applied it to autonomous driving under extreme temperatures and achieved as a high impressive accuracy rate as 94.5%. This tunable and stable wide-temperature PPC capability holds promise for ultra-low-power neuromorphic computing.
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Affiliation(s)
- Jian Yao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Qinan Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Jing Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Pin Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Chun Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China.
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zongjie Shen
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Liwei Liu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Dan Tian
- College of Materials Science and Engineering, Co-Innovation Center of Effiicient Processing and Utilization of Forest Resources, Nanjing Forestry University, Nanjing, 210037, China
| | - Song Qiu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, 999077, China
| | - Lixing Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Qingwen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
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12
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Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM, Roy VAL. Topological Quantum Switching Enabled Neuroelectronic Synaptic Modulators for Brain Computer Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306254. [PMID: 38532608 DOI: 10.1002/adma.202306254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 03/06/2024] [Indexed: 03/28/2024]
Abstract
Aging and genetic-related disorders in the human brain lead to impairment of daily cognitive functions. Due to their neural synaptic complexity and the current limits of knowledge, reversing these disorders remains a substantial challenge for brain-computer interfaces (BCI). In this work, a solution is provided to potentially override aging and neurological disorder-related cognitive function loss in the human brain through the application of the authors' quantum synaptic device. To illustrate this point, a quantum topological insulator (QTI) Bi2Se2Te-based synaptic neuroelectronic device, where the electric field-induced tunable topological surface edge states and quantum switching properties make them a premier option for establishing artificial synaptic neuromodulation approaches, is designed and developed. Leveraging these unique quantum synaptic properties, the developed synaptic device provides the capability to neuromodulate distorted neural signals, leading to the reversal of age-related disorders via BCI. With the synaptic neuroelectronic characteristics of this device, excellent efficacy in treating cognitive neural dysfunctions through modulated neuromorphic stimuli is demonstrated. As a proof of concept, real-time neuromodulation of electroencephalogram (EEG) deduced distorted event-related potentials (ERP) is demonstrated by modulation of the synaptic device array.
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Affiliation(s)
- Dani S Assi
- School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong, China
| | - Hongli Huang
- Electronics and Nanoscale Engineering, James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, U.K
| | - Vaithinathan Karthikeyan
- School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong, China
| | - Vaskuri C S Theja
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Maria Merlyne de Souza
- Electronics and Electrical Engineering, The University of Sheffield, Sheffield, S3 7HQ, U.K
| | - Vellaisamy A L Roy
- School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong, China
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13
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Ren S, Wang K, Jia X, Wang J, Xu J, Yang B, Tian Z, Xia R, Yu D, Jia Y, Yan X. Fibrous MXene Synapse-Based Biomimetic Tactile Nervous System for Multimodal Perception and Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2400165. [PMID: 38329189 DOI: 10.1002/smll.202400165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 01/19/2024] [Indexed: 02/09/2024]
Abstract
Biomimetic tactile nervous system (BTNS) inspired by organisms has motivated extensive attention in wearable fields due to its biological similarity, low power consumption, and perception-memory integration. Though many works about planar-shape BTNS are developed, few researches could be found in the field of fibrous BTNS (FBTNS) which is superior in terms of strong flexibility, weavability, and high-density integration. Herein, a FBTNS with multimodal sensibility and memory is proposed, by fusing the fibrous poly lactic acid (PLA)/Ag/MXene/Pt artificial synapse and MXene/EMIMBF4 ionic conductive elastomer. The proposed FBTNS can successfully perceive external stimuli and generate synaptic responses. It also exhibits a short response time (23 ms) and low set power consumption (17 nW). Additionally, the proposed device demonstrates outstanding synaptic plasticity under both mechanical and electrical stimuli, which can simulate the memory function. Simultaneously, the fibrous devices are embedded into textiles to construct tactile arrays, by which biomimetic tactile perception and temporary memory functions are successfully implemented. This work demonstrates the as-prepared FBTNS can generate biomimetic synaptic signals to serve as artificial feeling signals, it is thought that it could offer a fabric electronic unit integrating with perception and memory for Human-Computer interaction, and has great potential to build lightweight and comfortable Brain-Computer interfaces.
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Affiliation(s)
- Shuhui Ren
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Kaiyang Wang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Xiaotong Jia
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Jiuyang Wang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Jikang Xu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, P. R. China
| | - Biao Yang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, P. R. China
| | - Ziwei Tian
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Ruoxuan Xia
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Ding Yu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Yunfang Jia
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, P. R. China
| | - Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, P. R. China
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14
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Wang Z, Li M, Yang H, Shao S, Li J, Deng M, Kang K, Fang Y, Wang H, Zhao J. Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems. ACS NANO 2024; 18:14298-14311. [PMID: 38787538 DOI: 10.1021/acsnano.4c00166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
The development of large-scale integration of optoelectronic neuromorphic devices with ultralow power consumption and broadband responses is essential for high-performance bionics vision systems. In this work, we developed a strategy to construct large-scale (40 × 30) enhancement-mode carbon nanotube optoelectronic synaptic transistors with ultralow power consumption (33.9 aJ per pulse) and broadband responses (from 365 to 620 nm) using low-work function yttrium (Y)-gate electrodes and the mixture of eco-friendly photosensitive Ag2S quantum dots (QDs) and ionic liquids (ILs)-cross-linking-poly(4-vinylphenol) (PVP) (ILs-c-PVP) as the dielectric layers. Solution-processable carbon nanotube thin-film transistors (TFTs) showed enhancement-mode characteristics with the wide and controllable threshold voltage window (-1 V∼0 V) owing to use of the low-work-function Y-gate electrodes. It is noted that carbon nanotube optoelectronic synaptic transistors exhibited high on/off ratios (>106), small hysteresis and low operating voltage (≤2 V), and enhancement mode even under the illumination of ultraviolet (UV, 365 nm), blue (450 nm), and green (550 nm) to red (620 nm) pulse lights when introducing eco-friendly Ag2S QDs in dielectric layers, demonstrating that they have the strong fault-tolerant ability for the threshold voltage drifts caused by various manufacturing scenarios. Furthermore, some important bionic functions including a high paired pulse facilitation index (PPF index, up to 290%), learning and memory function with the long duration (200 s), and rapid recovery (2 s). Pavlov's dog experiment (retention time up to 20 min) and visual memory forgetting experiments (the duration of high current for 180 s) are also demonstrated. Significantly, the optoelectronic synaptic transistors can be used to simulate the adaptive process of vision in varying light conditions, and we demonstrated the dynamic transition of light adaptation to dark adaptation based on light-induced conditional behavior. This work undoubtedly provides valuable insights for the future development of artificial vision systems.
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Affiliation(s)
- Zebin Wang
- Institute of Nano Science and Technology, University of Science and Technology of China, No. 166 Ren Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Min Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Hongchao Yang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Shuangshuang Shao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Jiaqi Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Meng Deng
- Institute of Nano Science and Technology, University of Science and Technology of China, No. 166 Ren Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Kaixiang Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Yuxiao Fang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Hua Wang
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, NO.79, Yingze West Main Street, Taiyuan, Shanxi Province 030024, P.R. China
| | - Jianwen Zhao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
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15
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Wu X, Chen S, Jiang L, Wang X, Qiu L, Zheng L. Highly Sensitive, Low-Energy-Consumption Biomimetic Olfactory Synaptic Transistors Based on the Aggregation of the Semiconductor Films. ACS Sens 2024; 9:2673-2683. [PMID: 38688032 DOI: 10.1021/acssensors.4c00616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Artificial olfactory synaptic devices with low energy consumption and low detection limits are important for the further development of neuromorphic computing and intelligent robotics. In this work, an ultralow energy consumption and low detection limit imitation olfactory synaptic device based on organic field-effect transistors (OFETs) was prepared. The aggregation state of poly(diketopyrrolopyrrole-selenophene) (PTDPP) semiconductor films is modulated by adding unfavorable solvents and annealing treatments to obtain excellent charge transfer and gas synaptic properties. The regulated OFET device can execute basic biological synaptic functions, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), and the transition from short-term to long-term plasticity, at an ultralow operating voltage of -0.0005 V. The ultralow energy consumption during the biomimetic simulation is in the range of 8.94-88 fJ per spike. Noteworthily, the gas detection limit of the device is as low as 50 ppb, well below normal human NO2 gas perception limits (100-1000 ppb). Additionally, high-pass filtering, Pavlovian conditioned reflexes, and decoding of "Morse code" were simulated. Finally, a grid-free conformal device with outstanding flexibility and stability was fabricated. In conclusion, the control of semiconductor thin-film aggregation provides effective guidance for preparing low-energy-consumption, highly sensitive olfactory nerve-mimicking devices and promoting the development of wearable electronics.
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Affiliation(s)
- Xiaocheng Wu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Siyu Chen
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Lei Zheng
- School of Food and Biological Engineering, Hefei University of Technology, Hefei 230009, China
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16
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Bag A, Ghosh G, Sultan MJ, Chouhdry HH, Hong SJ, Trung TQ, Kang GY, Lee NE. Bio-Inspired Sensory Receptors for Artificial-Intelligence Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403150. [PMID: 38699932 DOI: 10.1002/adma.202403150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/16/2024] [Indexed: 05/05/2024]
Abstract
In the era of artificial intelligence (AI), there is a growing interest in replicating human sensory perception. Selective and sensitive bio-inspired sensory receptors with synaptic plasticity have recently gained significant attention in developing energy-efficient AI perception. Various bio-inspired sensory receptors and their applications in AI perception are reviewed here. The critical challenges for the future development of bio-inspired sensory receptors are outlined, emphasizing the need for innovative solutions to overcome hurdles in sensor design, integration, and scalability. AI perception can revolutionize various fields, including human-machine interaction, autonomous systems, medical diagnostics, environmental monitoring, industrial optimization, and assistive technologies. As advancements in bio-inspired sensing continue to accelerate, the promise of creating more intelligent and adaptive AI systems becomes increasingly attainable, marking a significant step forward in the evolution of human-like sensory perception.
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Affiliation(s)
- Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Gargi Ghosh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hamna Haq Chouhdry
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seok Ju Hong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tran Quang Trung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Geun-Young Kang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Samsung Advanced Institute for Health Sciences & Technology (SAIHST), Institute of Quantum Biophysics (IQB) and Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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17
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Yang Y, Li Y, Chen D, Shen G. Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning. MATERIALS HORIZONS 2024; 11:1934-1943. [PMID: 38345761 DOI: 10.1039/d3mh02154h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/23/2024]
Abstract
The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm-2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.
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Affiliation(s)
- Yaqian Yang
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Di Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
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18
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Luo X, Chen C, He Z, Wang M, Pan K, Dong X, Li Z, Liu B, Zhang Z, Wu Y, Ban C, Chen R, Zhang D, Wang K, Wang Q, Li J, Lu G, Liu J, Liu Z, Huang W. A bionic self-driven retinomorphic eye with ionogel photosynaptic retina. Nat Commun 2024; 15:3086. [PMID: 38600063 PMCID: PMC11006927 DOI: 10.1038/s41467-024-47374-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 03/27/2024] [Indexed: 04/12/2024] Open
Abstract
Bioinspired bionic eyes should be self-driving, repairable and conformal to arbitrary geometries. Such eye would enable wide-field detection and efficient visual signal processing without requiring external energy, along with retinal transplantation by replacing dysfunctional photoreceptors with healthy ones for vision restoration. A variety of artificial eyes have been constructed with hemispherical silicon, perovskite and heterostructure photoreceptors, but creating zero-powered retinomorphic system with transplantable conformal features remains elusive. By combining neuromorphic principle with retinal and ionoelastomer engineering, we demonstrate a self-driven hemispherical retinomorphic eye with elastomeric retina made of ionogel heterojunction as photoreceptors. The receptor driven by photothermoelectric effect shows photoperception with broadband light detection (365 to 970 nm), wide field-of-view (180°) and photosynaptic (paired-pulse facilitation index, 153%) behaviors for biosimilar visual learning. The retinal photoreceptors are transplantable and conformal to any complex surface, enabling visual restoration for dynamic optical imaging and motion tracking.
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Affiliation(s)
- Xu Luo
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chen Chen
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zixi He
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Min Wang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Keyuan Pan
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuemei Dong
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zifan Li
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Bin Liu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zicheng Zhang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yueyue Wu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chaoyi Ban
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Rong Chen
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Dengfeng Zhang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Kaili Wang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Qiye Wang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Junyue Li
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Gang Lu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Zhengdong Liu
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, China.
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, China.
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19
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Wang C, Bian Y, Liu K, Qin M, Zhang F, Zhu M, Shi W, Shao M, Shang S, Hong J, Zhu Z, Zhao Z, Liu Y, Guo Y. Strain-insensitive viscoelastic perovskite film for intrinsically stretchable neuromorphic vision-adaptive transistors. Nat Commun 2024; 15:3123. [PMID: 38600179 PMCID: PMC11006893 DOI: 10.1038/s41467-024-47532-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 04/04/2024] [Indexed: 04/12/2024] Open
Abstract
Stretchable neuromorphic optoelectronics present tantalizing opportunities for intelligent vision applications that necessitate high spatial resolution and multimodal interaction. Existing neuromorphic devices are either stretchable but not reconcilable with multifunctionality, or discrete but with low-end neurological function and limited flexibility. Herein, we propose a defect-tunable viscoelastic perovskite film that is assembled into strain-insensitive quasi-continuous microsphere morphologies for intrinsically stretchable neuromorphic vision-adaptive transistors. The resulting device achieves trichromatic photoadaptation and a rapid adaptive speed (<150 s) beyond human eyes (3 ~ 30 min) even under 100% mechanical strain. When acted as an artificial synapse, the device can operate at an ultra-low energy consumption (15 aJ) (far below the human brain of 1 ~ 10 fJ) with a high paired-pulse facilitation index of 270% (one of the best figures of merit in stretchable synaptic phototransistors). Furthermore, adaptive optical imaging is achieved by the strain-insensitive perovskite films, accelerating the implementation of next-generation neuromorphic vision systems.
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Affiliation(s)
- Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yangshuang Bian
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kai Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingcong Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Fan Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingliang Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingchao Shao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Shengcong Shang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jiaxin Hong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiheng Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China.
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
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20
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Yuan M, Qiu Y, Gao H, Feng J, Jiang L, Wu Y. Molecular Electronics: From Nanostructure Assembly to Device Integration. J Am Chem Soc 2024; 146:7885-7904. [PMID: 38483827 DOI: 10.1021/jacs.3c14044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Integrated electronics and optoelectronics based on organic semiconductors have attracted considerable interest in displays, photovoltaics, and biosensing owing to their designable electronic properties, solution processability, and flexibility. Miniaturization and integration of devices are growing trends in molecular electronics and optoelectronics for practical applications, which requires large-scale and versatile assembly strategies for patterning organic micro/nano-structures with simultaneously long-range order, pure orientation, and high resolution. Although various integration methods have been developed in past decades, molecular electronics still needs a versatile platform to avoid defects and disorders due to weak intermolecular interactions in organic materials. In this perspective, a roadmap of organic integration technologies in recent three decades is provided to review the history of molecular electronics. First, we highlight the importance of long-range-ordered molecular packing for achieving exotic electronic and photophysical properties. Second, we classify the strategies for large-scale integration of molecular electronics through the control of nucleation and crystallographic orientation, and evaluate them based on factors of resolution, crystallinity, orientation, scalability, and versatility. Third, we discuss the multifunctional devices and integrated circuits based on organic field-effect transistors (OFETs) and photodetectors. Finally, we explore future research directions and outlines the need for further development of molecular electronics, including assembly of doped organic semiconductors and heterostructures, biological interfaces in molecular electronics and integrated organic logics based on complementary FETs.
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Affiliation(s)
- Meng Yuan
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China
| | - Yuchen Qiu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China
| | - Hanfei Gao
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, P. R. China
| | - Jiangang Feng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Lei Jiang
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuchen Wu
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China
- Key Laboratory for Special Functional Materials of Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, P. R. China
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21
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Wang L, Zhang Y, Chen Y, Jiang L. Green Alga-Inspired Underwater Vision Based on Light-Driven Active Ion Transport across Janus Dual-Field Heterostructures. ACS NANO 2024; 18:9043-9052. [PMID: 38483837 DOI: 10.1021/acsnano.3c12874] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Natural organisms have evolved various biological ion channels to make timely responses toward different physical and/or chemical stimuli, giving guidance to construct artificial counterparts and expand the corresponding applications. They have also shown promising potential to overcome disadvantages of traditional electronic devices (e.g., energy-consuming operation and adverse humidity interference). Herein, we constructed a green alga-inspired nanofluidic system based on a Janus dual-field heterogeneous membrane (i.e., J-HM), which can function underwater as an artificial visual platform for light perception through enhanced active ion transport. The J-HM was obtained through sequentially assembled MXene and Cu-HHTP (i.e., a metal-organic framework based on the reaction between 2,3,6,7,10,11-hexahydroxytriphenylene hydrate (HHTP) and Cu2+) building units. Due to the formed temperature gradient and intramembrane electric field caused by the localized thermal excitation and efficient charge separation of J-HM under illumination, thermo-osmotic and photo-driven forces are generated for preferential cation transport from Cu-HHTP to MXene. Furthermore, unidirectional active transport can be enhanced by self-diffusion under a concentration gradient. Then, the corresponding underwater light perceptions at various light illumination conditions are explored, showing nearly a linear correlation with the light intensity. Finally, it is demonstrated that the visual platform can achieve object shape, definition, and distance recognition using a defined pixelated matrix, giving impetus to develop ionic signal transmission based sensing systems.
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Affiliation(s)
- Lili Wang
- University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Jiangsu 215123, China
| | - Yuhui Zhang
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yupeng Chen
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Jiang
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Jiangsu 215123, China
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22
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Chen H, Cai Y, Han Y, Huang H. Towards Artificial Visual Sensory System: Organic Optoelectronic Synaptic Materials and Devices. Angew Chem Int Ed Engl 2024; 63:e202313634. [PMID: 37783656 DOI: 10.1002/anie.202313634] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 10/01/2023] [Accepted: 10/02/2023] [Indexed: 10/04/2023]
Abstract
Developing an artificial visual sensory system requires optoelectronic materials and devices that can mimic the behavior of biological synapses. Organic/polymeric semiconductors have emerged as promising candidates for optoelectronic synapses due to their tunable optoelectronic properties, mechanic flexibility, and biological compatibility. In this review, we discuss the recent progress in organic optoelectronic synaptic materials and devices, including their design principles, working mechanisms, and applications. We also highlight the challenges and opportunities in this field and provide insights into potential applications of these materials and devices in next-generation artificial visual systems. By leveraging the advances in organic optoelectronic materials and devices, we can envision its future development in artificial intelligence.
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Affiliation(s)
- Hao Chen
- College of Materials Science and Opto-Electronic Technology &, Center of Materials Science and Optoelectronics Engineering &, College of Resources and Environment &, CAS Center for Excellence in Topological Quantum Computation &, CAS Key Laboratory of Vacuum Physic, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yunhao Cai
- College of Materials Science and Opto-Electronic Technology &, Center of Materials Science and Optoelectronics Engineering &, College of Resources and Environment &, CAS Center for Excellence in Topological Quantum Computation &, CAS Key Laboratory of Vacuum Physic, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yinghui Han
- College of Resources and Environment, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Hui Huang
- College of Materials Science and Opto-Electronic Technology &, Center of Materials Science and Optoelectronics Engineering &, College of Resources and Environment &, CAS Center for Excellence in Topological Quantum Computation &, CAS Key Laboratory of Vacuum Physic, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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23
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Liu D, Zhang J, Shi Q, Sun T, Xu Y, Li L, Tian L, Xiong L, Zhang J, Huang J. Humidity/Oxygen-Insensitive Organic Synaptic Transistors Based on Optical Radical Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305370. [PMID: 37506027 DOI: 10.1002/adma.202305370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 07/15/2023] [Indexed: 07/30/2023]
Abstract
For most organic synaptic transistors based on the charge trapping effect, different atmosphere conditions lead to significantly different device performance. Some devices even lose the synaptic responses under vacuum or inert atmosphere. The stable device performance of these organic synaptic transistors under varied working environments with different humidity and oxygen levels can be a challenge. Herein, a moisture- and oxygen-insensitive organic synaptic device based on the organic semiconductor and photoinitiator molecules is reported. Unlike the widely reported charge trapping effect, the photoinduced free radical is utilized to realize the photosynaptic performance. The resulting synaptic transistor displays typical excitatory postsynaptic current, paired-pulse facilitation, learning, and forgetting behaviors. Furthermore, the device exhibits decent and stable photosynaptic performances under high humidity and vacuum conditions. This type of organic synaptic device also demonstrates high potential in ultraviolet B perception based on its environmental stability and broad ultraviolet detection capability. Finally, the contrast-enhanced capability of the device is successfully validated by the single-layer-perceptron/double-layer network based Modified National Institute of Standards and Technology pattern recognition. This work could have important implications for the development of next-generation environment-stable organic synaptic devices and systems.
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Affiliation(s)
- Dapeng Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Qianqian Shi
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Tian
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Lize Xiong
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
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24
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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25
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Zhuang X, Sa Z, Zhang J, Wang M, Xu M, Liu F, Song K, He T, Chen F, Yang Z. An Amorphous Native Oxide Shell for High Bias-Stress Stability Nanowire Synaptic Transistor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302516. [PMID: 37767942 PMCID: PMC10625101 DOI: 10.1002/advs.202302516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 08/30/2023] [Indexed: 09/29/2023]
Abstract
The inhomogeneous native oxide shells on the surfaces of III-V group semiconductors typically yield inferior and unstable electrical properties metrics, challenging the development of next-generation integrated circuits. Herein, the native GaOx shells are profitably utilized by a simple in-situ thermal annealing process to achieve high-performance GaSb nanowires (NWs) field-effect-transistors (FETs) with excellent bias-stress stability and synaptic behaviors. By an optimal annealing time of 5 min, the as-constructed GaSb NW FET demonstrates excellent stability with a minimal shift of transfer curve (ΔVth ≈ 0.54 V) under a 60 min gate bias, which is far more stable than that of pristine GaSb NW FET (ΔVth ≈ 8.2 V). When the high bias-stress stability NW FET is used as the chargeable-dielectric free synaptic transistor, the typical synaptic behaviors, such as short-term plasticity, long-term plasticity, spike-time-dependent plasticity, and reliable learning stability are demonstrated successfully through the voltage tests. The mobile oxygen ion in the native GaOx shell strongly offsets the trapping states and leads to enhanced bias-stress stability and charge retention capability for synaptic behaviors. This work provides a new way of utilizing the native oxide shell to realize stable FET for chargeable-dielectric free neuromorphic computing systems.
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Affiliation(s)
- Xinming Zhuang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
- School of MicroelectronicsShandong UniversityJinan250100P. R. China
| | - Zixu Sa
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Jie Zhang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Mingxu Wang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Mingsheng Xu
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Fengjing Liu
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Kepeng Song
- School of Chemistry and Chemical EngineeringShandong UniversityJinan250100P. R. China
| | - Tao He
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Feng Chen
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Zai‐xing Yang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
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26
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Ercan E, Lin YC, Yang YF, Lin BH, Shimizu H, Inagaki S, Higashihara T, Chen WC. Tailoring Wavelength-Adaptive Visual Neuroplasticity Transitions of Synaptic Transistors Comprising Rod-Coil Block Copolymers for Dual-Mode Photoswitchable Learning/Forgetting Neural Functions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46157-46170. [PMID: 37728642 DOI: 10.1021/acsami.3c11441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
The vision-inspired artificial neural network based on optical synapses has drawn a tremendous amount of attention for emulating biological senses. Although photoexcitation-induced synaptic functionalities have been widely studied, optical habituation via the photoinhibitory pathway is yet to be demonstrated for sophisticated biomimetic visual adaptive systems. Here, the first optical neuromorphic block copolymer (BCP) phototransistor is demonstrated as an all-optical operation responding to various wavelengths, fulfilling photoassisted dynamic learning/forgetting cycles via optical potentiation without gate bias. The polyfluorene BCPs were precisely designed to enable wavelength-adaptive responses, benefiting from interfacial semiconductor/electret morphology and the crystallinity/electron affinity of the BCPs. Notably, this is the first work to simultaneously exhibit fully light-controlled short- and long-term memory based on organic material systems. The device presents a high current contrast above 100-fold and long-term retention over 104 s. As a proof-of-concept for neural networks, a 6 × 6 array of photosynapses performed outstanding visual pattern learning/forgetting with high accuracy. This study exploits the design strategy of a conjugated BCP electret to unleash the full potential of wavelength-adaptive visual neuroplasticity transitions. It provides an effective architecture for designing high-performance and high-storage capacity required applications in next-generation neuromorphic systems.
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Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yun-Fang Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Hiroya Shimizu
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Shin Inagaki
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Tomoya Higashihara
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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27
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Ran Y, Lu W, Wang X, Qin Z, Qin X, Lu G, Hu Z, Zhu Y, Bu L, Lu G. High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks. MATERIALS HORIZONS 2023; 10:4438-4451. [PMID: 37489257 DOI: 10.1039/d3mh00775h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/26/2023]
Abstract
Photonics neuromorphic computing shows great prospects due to the advantages of low latency, low power consumption and high bandwidth. Transistors with asymmetric electrode structures are receiving increasing attention due to their low power consumption, high optical response, and simple preparation technology. However, intelligent optical synapses constructed by asymmetric electrodes are still lacking systematic research and mechanism analysis. Herein, we present an asymmetric electrode structure of the light-stimulated synaptic transistor (As-LSST) with a bulk heterojunction as the semiconductor layer. The As-LSST exhibits superior electrical properties, photosensitivity and multiple biological synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, and long-term memory. Benefitting from the asymmetric electrode configuration, the devices can operate under a very low drain voltage of 1 × 10-7 V, and achieve an ultra-low energy consumption of 2.14 × 10-18 J per light stimulus event. Subsequently, As-LSST implemented the optical logic function and associative learning. Utilizing As-LSST, an artificial neural network (ANN) with ultra-high recognition rate (over 97.5%) of handwritten numbers was constructed. This work presents an easily-accessible concept for future neuromorphic computing and intelligent electronic devices.
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Affiliation(s)
- Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Xinsu Qin
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710049, China
| | - Guanyu Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Zhen Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
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28
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Shen Z, Huang W, Li L, Li H, Huang J, Cheng J, Fu Y. Research Progress of Organic Field-Effect Transistor Based Chemical Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302406. [PMID: 37271887 DOI: 10.1002/smll.202302406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 05/11/2023] [Indexed: 06/06/2023]
Abstract
Due to their high sensitivity and selectivity, chemical sensors have gained significant attention in various fields, including drug security, environmental testing, food safety, and biological medicine. Among them, organic field-effect transistor (OFET) based chemical sensors have emerged as a promising alternative to traditional sensors, exhibiting several advantages such as multi-parameter detection, room temperature operation, miniaturization, flexibility, and portability. This review paper presents recent research progress on OFET-based chemical sensors, highlighting the enhancement of sensor performance, including sensitivity, selectivity, stability, etc. The main improvement programs are improving the internal and external structures of the device, as well as the organic semiconductor layer and dielectric structure. Finally, an outlook on the prospects and challenges of OFET-based chemical sensors is presented.
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Affiliation(s)
- Zhengqi Shen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Huang
- School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 611731, China
| | - Li Li
- Interdisciplinary Materials Research Center School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Huizi Li
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jia Huang
- Interdisciplinary Materials Research Center School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Jiangong Cheng
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanyan Fu
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Wang X, Yang S, Qin Z, Hu B, Bu L, Lu G. Enhanced Multiwavelength Response of Flexible Synaptic Transistors for Human Sunburned Skin Simulation and Neuromorphic Computation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303699. [PMID: 37358823 DOI: 10.1002/adma.202303699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 06/22/2023] [Indexed: 06/27/2023]
Abstract
In biological species, optogenetics and bioimaging work together to regulate the function of neurons. Similarly, the light-controlled artificial synaptic system not only enhances computational speed but also simulates complex synaptic functions. However, reported synaptic properties are mainly limited to mimicking simple biological functions and single-wavelength responses. Therefore, the development of flexible synaptic devices with multiwavelength optical signal response and multifunctional simulation remains a challenge. Here, flexible organic light-stimulated synaptic transistors (LSSTs) enabled by alumina oxide (AlOX ), with a simple fabrication process, are reported. By embedding AlOX nanoparticles, the excitons separation efficiency is improved, allowing for multiple wavelength responses. Optimized LSSTs can respond to multiple optical and electrical signals in a highly synaptic manner. Multiwavelength optical synaptic plasticity, electrical synaptic plasticity, sunburned skin simulation, learning efficiency model controlled by photoelectric cooperative stimulation, neural network computing, "deer" picture learning and memory functions are successfully proposed, which promote the development for future artificial intelligent systems. Furthermore, as prepared flexible transistors exhibit mechanical flexibility with bending radius down to 2.5 mm and improved photosynaptic plasticity, which facilitating development of neuromorphic computing and multifunction integration systems at the device-level.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Shuting Yang
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Bin Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
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30
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Jiang L, Yang L, Wu X, Wang X, Zheng L, Xu W, Qiu L. Helical Nanofiber Photoelectric Synaptic Devices for an Artificial Vision Nervous System. NANO LETTERS 2023; 23:8146-8154. [PMID: 37579217 DOI: 10.1021/acs.nanolett.3c02266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Inspired by the helical structure and the resultant exquisite functions of biomolecules, helical polymers have received increasing attention. Here, a series of poly(3-hexylthiophene)-block-poly(phenyl isocyanide) (P3HT-b-PPI) copolymers were prepared using a simple one-pot living polymerization method. Interestingly, the P3HT80-b-PPI30 films were found to have a helical nanofiber structure. The corresponding device has superior optoelectronic properties, such as a broadened spectral response range from the visible band to the deep ultraviolet (DUV) and an approximately 5-fold longer carrier decay time after DUV light stimulation. An energy consumption of 1.44 fJ per synaptic event was obtained, which is the lowest energy consumption achieved so far with DUV light stimulation. The encryption and decryption of images are implemented using an array of devices. Finally, a photoreceptor neural pathway was constructed to achieve early warning for the recognition of the display of harmful light. This research provides an effective strategy for the development of a novel optoelectronic synaptic device.
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Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Xiaocheng Wu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Lei Zheng
- School of Food and Biological Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
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31
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Chen X, Sun YF, Wu X, Shi S, Wang Z, Zhang J, Fang WH, Huang W. Breaking the Trade-Off Between Polymer Dielectric Constant and Loss via Aluminum Oxo Macrocycle Dopants for High-Performance Neuromorphic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2306260. [PMID: 37660306 DOI: 10.1002/adma.202306260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 08/24/2023] [Indexed: 09/05/2023]
Abstract
The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2 V-1 s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics.
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Affiliation(s)
- Xiaowei Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Yi-Fan Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Xiaosong Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, Hong Kong
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, Hong Kong
| | - Jian Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Wei-Hui Fang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Weiguo Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
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32
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Wang X, Ran Y, Li X, Qin X, Lu W, Zhu Y, Lu G. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration. MATERIALS HORIZONS 2023; 10:3269-3292. [PMID: 37312536 DOI: 10.1039/d3mh00216k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The investigation of transistor-based artificial synapses in bioinspired information processing is undergoing booming exploration, and is the stable building block for brain-like computing. Given that the storage and computing separation architecture of von Neumann construction is not conducive to the current explosive information processing, it is critical to accelerate the connection between hardware systems and software simulations of intelligent synapses. So far, various works based on a transistor-based synaptic system successfully simulated functions similar to biological nerves in the human brain. However, the influence of the semiconductor and the device structural design on synaptic properties is still poorly linked. This review concretely emphasizes the recent advances in the novel structure design of semiconductor materials and devices used in synaptic transistors, not only from a single multifunction synaptic device but also to system application with various connected routes and related working mechanisms. Finally, crises and opportunities in transistor-based synaptic interconnection are discussed and predicted.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Xiaoqian Li
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, Shandong Province, 250100, P. R. China
| | - Xinsu Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
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33
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Huang M, Ali W, Yang L, Huang J, Yao C, Xie Y, Sun R, Zhu C, Tan Y, Liu X, Li S, Li Z, Pan A. Multifunctional Optoelectronic Synapses Based on Arrayed MoS 2 Monolayers Emulating Human Association Memory. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300120. [PMID: 37058134 DOI: 10.1002/advs.202300120] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/01/2023] [Indexed: 06/04/2023]
Abstract
Optoelectronic synaptic devices integrating light-perception and signal-storage functions hold great potential in neuromorphic computing for visual information processing, as well as complex brain-like learning, memorizing, and reasoning. Herein, the successful growth of MoS2 monolayer arrays assisted by gold nanorods guided precursor nucleation is demonstrated. Optical, spectral, and morphology characterizations of MoS2 prove that arrayed flakes are homogeneous monolayers, and they are further fabricated as optoelectronic devices showing featured photocurrent loops and stable optical responses. Typical synaptic behaviors of photo-induced short-term potentiation, long-term potentiation, and paired pulse facilitation are recorded under different light stimulations of 450, 532, and 633 nm lasers at various excitation powers. A visual sensing system consisting of 5 × 6 pixels is constructed to simulate the light-sensing image mapped by forgetting curves in real time. Moreover, the system presents the ability of utilizing associated images to restore vague and incomplete memories, which successfully mimics human intelligent behaviors of association memory and logical reasoning. The work emulates the brain-like artificial intelligence using arrayed 2D semiconductors, which paves an avenue to achieve smart retina and complex brain-like system.
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Affiliation(s)
- Ming Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Wajid Ali
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Liuli Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jianhua Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Yunfei Xie
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ronghuan Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Yike Tan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
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Xu Y, Shi Y, Qian C, Xie P, Jin C, Shi X, Zhang G, Liu W, Wan C, Ho JC, Sun J, Yang J. Optically Readable Organic Electrochemical Synaptic Transistors for Neuromorphic Photonic Image Processing. NANO LETTERS 2023. [PMID: 37229610 DOI: 10.1021/acs.nanolett.3c01291] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Optically readable organic synaptic devices have great potential in both artificial intelligence and photonic neuromorphic computing. Herein, a novel optically readable organic electrochemical synaptic transistor (OR-OEST) strategy is first proposed. The electrochemical doping mechanism of the device was systematically investigated, and the basic biological synaptic behaviors that can be read by optical means are successfully achieved. Furthermore, the flexible OR-OESTs are capable of electrically switching the transparency of semiconductor channel materials in a nonvolatile manner, and thus the multilevel memory can be achieved through optical readout. Finally, the OR-OESTs are developed for the preprocessing of photonic images, such as contrast enhancement and denoising, and feeding the processed images into an artificial neural network, achieving a recognition rate of over 90%. Overall, this work provides a new strategy for the implementation of photonic neuromorphic systems.
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Affiliation(s)
- Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Yiming Shi
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Chuan Qian
- Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, Hunan 410081, People's Republic of China
| | - Pengshan Xie
- Department of Materials Science and Engineering City University of Hong Kong Kowloon, Hong Kong SAR 999077, People's Republic of China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Xiaofang Shi
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Gengming Zhang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Wanrong Liu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Changjin Wan
- School of Electronic Science & Engineering, and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210008, People's Republic of China
| | - Johnny C Ho
- Department of Materials Science and Engineering City University of Hong Kong Kowloon, Hong Kong SAR 999077, People's Republic of China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Junliang Yang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
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35
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Zhao X, Zhang H, Zhang J, Liu J, Lei M, Jiang L. Organic Semiconductor Single Crystal Arrays: Preparation and Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300483. [PMID: 36967565 DOI: 10.1002/advs.202300483] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Revised: 02/20/2023] [Indexed: 05/27/2023]
Abstract
The study of organic semiconductor single crystal (OSSC) arrays has recently attracted considerable interest given their potential applications in flexible displays, smart wearable devices, biochemical sensors, etc. Patterning of OSSCs is the prerequisite for the realization of organic integrated circuits. Patterned OSSCs can not only decrease the crosstalk between adjacent organic field-effect transistors (OFETs), but also can be conveniently integrated with other device elements which facilitate circuits application. Tremendous efforts have been devoted in the controllable preparation of OSSC arrays, and great progress has been achieved. In this review, the general strategies for patterning OSSCs are summarized, along with the discussion of the advantages and limitations of different patterning methods. Given the identical thickness of monolayer molecular crystals (MMCs) which is beneficial to achieve super uniformity of OSSC arrays and devices, patterning of MMCs is also emphasized. Then, OFET performance is summarized with comparison of the mobility and coefficient of variation based on the OSSC arrays prepared by different methods. Furthermore, advances of OSSC array-based circuits and flexible devices of different functions are highlighted. Finally, the challenges that need to be tackled in the future are presented.
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Affiliation(s)
- Xiaotong Zhao
- State Key Laboratory of Information Photonics and Optical Communications & School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hantang Zhang
- College of Chemistry and Material Science, Shandong Agricultural University, Taian, 271018, China
| | - Jing Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Materials Science of Shanxi Normal University & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Taiyuan, 031000, China
| | - Jie Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ming Lei
- State Key Laboratory of Information Photonics and Optical Communications & School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
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36
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Jiang T, Wang Y, Zheng Y, Wang L, He X, Li L, Deng Y, Dong H, Tian H, Geng Y, Xie L, Lei Y, Ling H, Ji D, Hu W. Tetrachromatic vision-inspired neuromorphic sensors with ultraweak ultraviolet detection. Nat Commun 2023; 14:2281. [PMID: 37085540 PMCID: PMC10121588 DOI: 10.1038/s41467-023-37973-0] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Accepted: 04/05/2023] [Indexed: 04/23/2023] Open
Abstract
Sensing and recognizing invisible ultraviolet (UV) light is vital for exploiting advanced artificial visual perception system. However, due to the uncertainty of the natural environment, the UV signal is very hard to be detected and perceived. Here, inspired by the tetrachromatic visual system, we report a controllable UV-ultrasensitive neuromorphic vision sensor (NeuVS) that uses organic phototransistors (OPTs) as the working unit to integrate sensing, memory and processing functions. Benefiting from asymmetric molecular structure and unique UV absorption of the active layer, the as fabricated UV-ultrasensitive NeuVS can detect 370 nm UV-light with the illumination intensity as low as 31 nW cm-2, exhibiting one of the best optical figures of merit in UV-sensitive neuromorphic vision sensors. Furthermore, the NeuVS array exbibits good image sensing and memorization capability due to its ultrasensitive optical detection and large density of charge trapping states. In addition, the wavelength-selective response and multi-level optical memory properties are utilized to construct an artificial neural network for extract and identify the invisible UV information. The NeuVS array can perform static and dynamic image recognition from the original color image by filtering red, green and blue noise, and significantly improve the recognition accuracy from 46 to 90%.
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Affiliation(s)
- Ting Jiang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yingshuang Zheng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Yunfeng Deng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hongkun Tian
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China.
| | - Yanhou Geng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yong Lei
- Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, Ilmenau, 98693, Germany
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China.
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China.
| | - Wenping Hu
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University. Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, Fuzhou, 350207, China
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37
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Sun C, Wang T. Organic thin-film transistors and related devices in life and health monitoring. NANO RESEARCH 2023:1-19. [PMID: 37359073 PMCID: PMC10102697 DOI: 10.1007/s12274-023-5606-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/21/2023] [Accepted: 02/22/2023] [Indexed: 06/28/2023]
Abstract
The early determination of disease-related biomarkers can significantly improve the survival rate of patients. Thus, a series of explorations for new diagnosis technologies, such as optical and electrochemical methods, have been devoted to life and health monitoring. Organic thin-film transistor (OTFT), as a state-of-the-art nano-sensing technology, has attracted significant attention from construction to application owing to the merits of being label-free, low-cost, facial, and rapid detection with multi-parameter responses. Nevertheless, interference from non-specific adsorption is inevitable in complex biological samples such as body liquid and exhaled gas, so the reliability and accuracy of the biosensor need to be further improved while ensuring sensitivity, selectivity, and stability. Herein, we overviewed the composition, mechanism, and construction strategies of OTFTs for the practical determination of disease-related biomarkers in both body fluids and exhaled gas. The results show that the realization of bio-inspired applications will come true with the rapid development of high-effective OTFTs and related devices. Electronic Supplementary Material Supplementary material is available in the online version of this article at 10.1007/s12274-023-5606-1.
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Affiliation(s)
- Chenfang Sun
- Tianjin Key Laboratory of Drug Targeting and Bioimaging, Life and Health Intelligent Research Institute, Tianjin University of Technology, Tianjin, 300384 China
| | - Tie Wang
- Tianjin Key Laboratory of Drug Targeting and Bioimaging, Life and Health Intelligent Research Institute, Tianjin University of Technology, Tianjin, 300384 China
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38
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Yamamoto S. Polymer‐based
neuromorphic devices: resistive switches and organic electrochemical transistors. POLYM INT 2023. [DOI: 10.1002/pi.6520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/07/2023]
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39
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Jiang L, Huang H, Zhang C, Yuan Y, Wang X, Qiu L. One-Step Preparation of Semiconductor/Dielectric Bilayer Structures for the Simulation of Flexible Bionic Photonic Synapses. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7227-7235. [PMID: 36700528 DOI: 10.1021/acsami.2c22223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Flexible synaptic devices with information sensing, processing, and storage functions are indispensable in the development of wearable artificial intelligence electronic systems. Here, a semiconductor/dielectric bilayer structure was prepared by a one-step deposition method and used for the first time in a flexible biomimetic photonic synaptic transistor device. Specifically, poly(3-hexylthiophene)-block-poly(phenyl isocyanide) with pentafluorophenyl ester (P3HT-b-PPI(5F)) was prepared as the device active layer, where the P3HT segment served as a carrier transport channel and optical gate and the PPI(5F) segment was used for charge trapping. Various biomimetic synaptic behaviors, such as excitatory postsynaptic currents, paired-pulse facilitation, and short-term/long-term memory, were successfully simulated under green light stimulation. An ultra-low energy consumption of 1.82 fJ was achieved with a greatly reduced operating voltage. Further, the "Morse-code" optical decoding was simulated using the excellent synaptic plasticity of the device. In addition, flexible synaptic devices were prepared by a one-step deposition method and can be well-affixed to arbitrary substrates. This has promising applications in the field of wearable bionic electronics.
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Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Hua Huang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Can Zhang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Ye Yuan
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
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40
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Han X, Zhao X, Zeng T, Yang Y, Yu H, Zhang C, Wang B, Liu X, Zhang T, Sun J, Li X, Zhao T, Zhang M, Ni Y, Tong Y, Tang Q, Liu Y. Multimodal-Synergistic-Modulation Neuromorphic Imaging Systems for Simulating Dry Eye Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206181. [PMID: 36504477 DOI: 10.1002/smll.202206181] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2022] [Revised: 11/18/2022] [Indexed: 06/17/2023]
Abstract
Inspired by human eyes, the neuromorphic visual system employs a highly efficient imaging and recognition process, which offers tremendous advantages in image acquisition, data pre-processing, and dynamic storage. However, it is still an enormous challenge to simultaneously simulate the structure, function, and environmental adaptive behavior of the human eye based on one device. Here, a multimodal-synergistic-modulation neuromorphic imaging system based on ultraflexible synaptic transistors is successfully presented and firstly simulates the dry eye imaging behavior at the device level. Moreover, important functions of the human visual system in relation to optoelectronic synaptic plasticity, image erasure and enhancement, real-time preprocessing, and dynamic storage are simulated by versatile devices. This work not only simplifies the complexity of traditional neuromorphic visual systems, but also plays a positive role in the publicity of biomedical eye care.
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Affiliation(s)
- Xu Han
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Yahan Yang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Hongyan Yu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Cong Zhang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Bin Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Xiaoqian Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Tao Zhang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Jing Sun
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Xinyuan Li
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Tuo Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Mingxin Zhang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Yanping Ni
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
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41
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Li G. Artificial optical synaptic devices with ultra-low power consumption. LIGHT, SCIENCE & APPLICATIONS 2023; 12:24. [PMID: 36642739 PMCID: PMC9841008 DOI: 10.1038/s41377-022-01066-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A BP/CdS heterostructure-based artificial photonic synapse with an ultra-low power consumption is proposed, presenting great potential in high-performance neuromorphic vision systems.
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Affiliation(s)
- Guoqiang Li
- State Key Laboratory of Luminous Materials and Devices, South China University of Technology, Guangzhou, 510641, China.
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42
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Wang WS, Zhu LQ. Recent advances in neuromorphic transistors for artificial perception applications: FOCUS ISSUE REVIEW. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 24:10-41. [PMID: 36605031 PMCID: PMC9809405 DOI: 10.1080/14686996.2022.2152290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 11/09/2022] [Accepted: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Conventional von Neumann architecture is insufficient in establishing artificial intelligence (AI) in terms of energy efficiency, computing in memory and dynamic learning. Delightedly, rapid developments in neuromorphic computing provide a new paradigm to solve this dilemma. Furthermore, neuromorphic devices that can realize synaptic plasticity and neuromorphic function have extraordinary significance for neuromorphic system. A three-terminal neuromorphic transistor is one of the typical representatives. In addition, human body has five senses, including vision, touch, auditory sense, olfactory sense and gustatory sense, providing abundant information for brain. Inspired by the human perception system, developments in artificial perception system will give new vitality to intelligent robots. This review discusses the operation mechanism, function and application of neuromorphic transistors. The latest progresses in artificial perception systems based on neuromorphic transistors are provided. Finally, the opportunities and challenges of artificial perception systems are summarized.
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Affiliation(s)
- Wei Sheng Wang
- School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang, People’s Republic of China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, People’s Republic of China
| | - Li Qiang Zhu
- School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang, People’s Republic of China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, People’s Republic of China
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43
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Zhu C, Liu H, Wang W, Xiang L, Jiang J, Shuai Q, Yang X, Zhang T, Zheng B, Wang H, Li D, Pan A. Optical synaptic devices with ultra-low power consumption for neuromorphic computing. LIGHT, SCIENCE & APPLICATIONS 2022; 11:337. [PMID: 36443284 PMCID: PMC9705294 DOI: 10.1038/s41377-022-01031-z] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 10/31/2022] [Accepted: 11/01/2022] [Indexed: 05/31/2023]
Abstract
Brain-inspired neuromorphic computing, featured by parallel computing, is considered as one of the most energy-efficient and time-saving architectures for massive data computing. However, photonic synapse, one of the key components, is still suffering high power consumption, potentially limiting its applications in artificial neural system. In this study, we present a BP/CdS heterostructure-based artificial photonic synapse with ultra-low power consumption. The device shows remarkable negative light response with maximum responsivity up to 4.1 × 108 A W-1 at VD = 0.5 V and light power intensity of 0.16 μW cm-2 (1.78 × 108 A W-1 on average), which further enables artificial synaptic applications with average power consumption as low as 4.78 fJ for each training process, representing the lowest among the reported results. Finally, a fully-connected optoelectronic neural network (FONN) is simulated with maximum image recognition accuracy up to 94.1%. This study provides new concept towards the designing of energy-efficient artificial photonic synapse and shows great potential in high-performance neuromorphic vision systems.
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Affiliation(s)
- Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Wenqiang Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Li Xiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China.
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China.
| | - Jie Jiang
- School of Physics and Electronics, Central South University, 410083, Changsha, China
| | - Qin Shuai
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Tian Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Hui Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China.
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, 410082, Changsha, China.
- Hunan Institute of Optoelectronic Integration, Hunan University, 410082, Changsha, China.
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44
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Li Y, Wang J, Yang Q, Shen G. Flexible Artificial Optoelectronic Synapse based on Lead-Free Metal Halide Nanocrystals for Neuromorphic Computing and Color Recognition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202123. [PMID: 35661449 PMCID: PMC9353487 DOI: 10.1002/advs.202202123] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Revised: 05/14/2022] [Indexed: 05/04/2023]
Abstract
Optoelectronic synapses combining optical-sensing and synaptic functions are playing an increasingly vital role in the neuromorphic computing systems development, which can efficiently process visual information and complex recognition, memory, and learning. Metal halides are considered promising candidates for synaptic devices due to their excellent optoelectronic properties. However, the toxicity of lead and the further development of device functions are the recognized problems at present. Herein, a flexible optoelectronic synapses system based on high-quality lead-free Cs3 Bi2 I9 nanocrystals is demonstrated, in which the carrier confinement caused by the band mismatching between the Cs3 Bi2 I9 and the organic semiconductor layer provides the possibility to simulate synaptic behaviors. The synaptic functions including long/short-term memory and learning-forgetting-relearning are demonstrated in this device and visual perception, visual memory, and color recognition functions are successfully implemented. Additionally, the flexible device exhibits excellent robustness and can realize imaging of light distribution under curved hemispheres similar to the human eye. Finally, through the simulation based on an artificial neural network algorithm, the device successfully realizes the high-precision recognition of handwritten digital images and possesses a strong fault tolerant capability even in bending states. These results are expected to drive the practical progress of metal halide for neuromorphic computing.
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Affiliation(s)
- Ying Li
- State Key Laboratory for Superlattices and MicrostructuresInstitute of Semiconductors, Chinese Academy of SciencesBeijing100083China
| | - Jiahui Wang
- Department of Chemistryand Laboratory of Nanomaterials for Energy ConversionUniversity of Science and Technology of ChinaHefei230026P. R. China
| | - Qing Yang
- Department of Chemistryand Laboratory of Nanomaterials for Energy ConversionUniversity of Science and Technology of ChinaHefei230026P. R. China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and MicrostructuresInstitute of Semiconductors, Chinese Academy of SciencesBeijing100083China
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
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