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Zhang L, Li Y, Liu X, Yang R, Qiu J, Xu J, Lu B, Rosen J, Qin L, Jiang J. MXene-Stabilized VS 2 Nanostructures for High-Performance Aqueous Zinc Ion Storage. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401252. [PMID: 38605686 PMCID: PMC11220636 DOI: 10.1002/advs.202401252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 03/25/2024] [Indexed: 04/13/2024]
Abstract
Aqueous zinc-ion batteries (AZIBs) based on vanadium oxides or sulfides are promising candidates for large-scale rechargeable energy storage due to their ease of fabrication, low cost, and high safety. However, the commercial application of vanadium-based electrode materials has been hindered by challenging problems such as poor cyclability and low-rate performance. To this regard, sophisticated nanostructure engineering technology is used to adeptly incorporate VS2 nanosheets into the MXene interlayers to create a stable 2D heterogeneous layered structure. The MXene nanosheets exhibit stable interactions with VS2 nanosheets, while intercalation between nanosheets effectively increases the interlayer spacing, further enhancing their stability in AZIBs. Benefiting from the heterogeneous layered structure with high conductivity, excellent electron/ion transport, and abundant reactive sites, the free-standing VS2/Ti3C2Tz composite film can be used as both the cathode and the anode of AZIBs. Specifically, the VS2/Ti3C2Tz cathode presents a high specific capacity of 285 mAh g-1 at 0.2 A g-1. Furthermore, the flexible Zn-metal free in-plane VS2/Ti3C2Tz//MnO2/CNT AZIBs deliver high operation voltage (2.0 V) and impressive long-term cycling stability (with a capacity retention of 97% after 5000 cycles) which outperforms almost all reported Vanadium-based electrodes for AZIBs. The effective modulation of the material structure through nanocomposite engineering effectively enhances the stability of VS2, which shows great potential in Zn2+ storage. This work will hasten and stimulate further development of such composite material in the direction of energy storage.
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Affiliation(s)
- Liping Zhang
- Flexible Electronics Innovation Institute (FEII)Jiangxi Key Laboratory of Flexible ElectronicsJiangxi Science and Technology Normal UniversityNanchang330013China
| | - Yeying Li
- Flexible Electronics Innovation Institute (FEII)Jiangxi Key Laboratory of Flexible ElectronicsJiangxi Science and Technology Normal UniversityNanchang330013China
| | - Xianjie Liu
- Laboratory of Organic Electronics (LOE)Department of Science and TechnologyLinköping UniversityNorrköping60174Sweden
| | - Ruping Yang
- Flexible Electronics Innovation Institute (FEII)Jiangxi Key Laboratory of Flexible ElectronicsJiangxi Science and Technology Normal UniversityNanchang330013China
| | - Junxiao Qiu
- Flexible Electronics Innovation Institute (FEII)Jiangxi Key Laboratory of Flexible ElectronicsJiangxi Science and Technology Normal UniversityNanchang330013China
| | - Jingkun Xu
- Flexible Electronics Innovation Institute (FEII)Jiangxi Key Laboratory of Flexible ElectronicsJiangxi Science and Technology Normal UniversityNanchang330013China
| | - Baoyang Lu
- Flexible Electronics Innovation Institute (FEII)Jiangxi Key Laboratory of Flexible ElectronicsJiangxi Science and Technology Normal UniversityNanchang330013China
| | - Johanna Rosen
- Department of Physics, Chemistry and Biology (IFM)Linköping UniversityLinköping58183Sweden
| | - Leiqiang Qin
- Department of Physics, Chemistry and Biology (IFM)Linköping UniversityLinköping58183Sweden
| | - Jianxia Jiang
- Flexible Electronics Innovation Institute (FEII)Jiangxi Key Laboratory of Flexible ElectronicsJiangxi Science and Technology Normal UniversityNanchang330013China
- Department of Physics, Chemistry and Biology (IFM)Linköping UniversityLinköping58183Sweden
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2
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Min L, Sun H, Guo L, Zhou Y, Wang M, Cao F, Li L. Pyroelectric-Accelerated Perovskite Photodetector for Picosecond Light Detection and Ranging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400279. [PMID: 38548708 DOI: 10.1002/adma.202400279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Revised: 03/04/2024] [Indexed: 04/06/2024]
Abstract
Light detection and ranging (LiDAR) is indispensable in applications such as unmanned aerial vehicles, autonomous driving, and biomimetic robots. However, the precision and available distance of LiDAR are constrained by the speed and sensitivity of the photodetector, necessitating the use of expensive and energy-consuming avalanche diodes. To address these challenges, in this study, a pyroelectricity-based acceleration strategy with 2D-(graded 3D) perovskite heterojunction is proposed to achieve a record high speed (27.7 ns with an active area of 9 mm2, and 176 ps with an active area of 0.2 mm2) and high responsivity (0.65 A W-1) at zero bias. This success is attributed to the unique mechanism where the electrons from the pyroelectric effect at the Cl-rich 2D/3D interface directly recombine with excess holes during light-dark transitions, breaking speed limitations related to carrier mobility and capacitive effect. Furthermore, the introduced pyroelectric effect significantly enhances the photoresponse, resulting in a self-powered external quantum efficiency exceeding 100%. The study also demonstrates precise position detection at the centimeter level. In conclusion, this research presents a pioneering approach for developing high-speed photodiodes with exceptional sensitivity, mitigating energy and cost concerns in LiDAR applications.
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Affiliation(s)
- Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Yicheng Zhou
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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3
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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Meng D, Xu M, Li S, Ganesan M, Ruan X, Ravi SK, Cui X. Functional MXenes: Progress and Perspectives on Synthetic Strategies and Structure-Property Interplay for Next-Generation Technologies. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304483. [PMID: 37730973 DOI: 10.1002/smll.202304483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 07/11/2023] [Indexed: 09/22/2023]
Abstract
MXenes are a class of 2D materials that include layered transition metal carbides, nitrides, and carbonitrides. Since their inception in 2011, they have garnered significant attention due to their diverse compositions, unique structures, and extraordinary properties, such as high specific surface areas and excellent electrical conductivity. This versatility has opened up immense potential in various fields, catalyzing a surge in MXene research and leading to note worthy advancements. This review offers an in-depth overview of the evolution of MXenes over the past 5 years, with an emphasis on synthetic strategies, structure-property relationships, and technological prospects. A classification scheme for MXene structures based on entropy is presented and an updated summary of the elemental constituents of the MXene family is provided, as documented in recent literature. Delving into the microscopic structure and synthesis routes, the intricate structure-property relationships are explored at the nano/micro level that dictate the macroscopic applications of MXenes. Through an extensive review of the latest representative works, the utilization of MXenes in energy, environmental, electronic, and biomedical fields is showcased, offering a glimpse into the current technological bottlenecks, such asstability, scalability, and device integration. Moreover, potential pathways for advancing MXenes toward next-generation technologies are highlighted.
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Affiliation(s)
- Depeng Meng
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Minghua Xu
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Shijie Li
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Muthusankar Ganesan
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Xiaowen Ruan
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Sai Kishore Ravi
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Xiaoqiang Cui
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
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5
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Li L, Shen G. MXene based flexible photodetectors: progress, challenges, and opportunities. MATERIALS HORIZONS 2023; 10:5457-5473. [PMID: 37818551 DOI: 10.1039/d3mh01362f] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/12/2023]
Abstract
The growing interest in applying 2D transition-metal carbides and nitrides (MXenes) to diverse application fields such as energy storage and harvesters, catalysts, sensors, optoelectronics, electromagnetic interference shielding and antennas since its first discovery in 2011 is clearly evident. Their intrinsic high conductivity limits the development of MXenes in photodetectors that rely on the semiconducting properties of active materials, while the abundant functional groups on the surface of MXenes provide opportunities for using MXenes as sensing materials in the fabrication of flexible photodetectors. Considerable studies on MXene based photodetectors have been carried out, but the main obstacles include seeking novel semiconducting materials in MXene families, the manufacturing technology, etc. This review highlights the progress, challenges and opportunities in MXene based flexible photodetectors and discusses novel materials, architectures, and approaches that capitalize on our growing understanding of MXenes.
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Affiliation(s)
- La Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
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6
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Guo T, Xu X, Liu C, Wang Y, Lei Y, Fang B, Shi L, Liu H, Hota MK, Al-Jawhari HA, Zhang X, Alshareef HN. Large-Area Metal-Semiconductor Heterojunctions Realized via MXene-Induced Two-Dimensional Surface Polarization. ACS NANO 2023; 17:8324-8332. [PMID: 37079914 PMCID: PMC10173692 DOI: 10.1021/acsnano.2c12684] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Direct MXene deposition on large-area 2D semiconductor surfaces can provide design versatility for the fabrication of MXene-based electronic devices (MXetronics). However, it is challenging to deposit highly uniform wafer-scale hydrophilic MXene films (e.g., Ti3C2Tx) on hydrophobic 2D semiconductor channel materials (e.g., MoS2). Here, we demonstrate a modified drop-casting (MDC) process for the deposition of MXene on MoS2 without any pretreatment, which typically degrades the quality of either MXene or MoS2. Different from the traditional drop-casting method, which usually forms rough and thick films at the micrometer scale, our MDC method can form an ultrathin Ti3C2Tx film (ca. 10 nm) based on a MXene-introduced MoS2 surface polarization phenomenon. In addition, our MDC process does not require any pretreatment, unlike MXene spray-coating that usually requires a hydrophilic pretreatment of the substrate surface before deposition. This process offers a significant advantage for Ti3C2Tx film deposition on UV-ozone- or O2-plasma-sensitive surfaces. Using the MDC process, we fabricated wafer-scale n-type Ti3C2Tx-MoS2 van der Waals heterojunction transistors, achieving an average effective electron mobility of ∼40 cm2·V-1·s-1, on/off current ratios exceeding 104, and subthreshold swings of under 200 mV·dec-1. The proposed MDC process can considerably enhance the applications of MXenes, especially the design of MXene/semiconductor nanoelectronics.
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Affiliation(s)
- Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Chen Liu
- Applied Physics, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yizhou Wang
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yongjiu Lei
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Bin Fang
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Lin Shi
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Hang Liu
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Hala A Al-Jawhari
- Department of Physics, King Abdulaziz University, Jeddah 21551 Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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7
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Li Y, Huang S, Peng S, Jia H, Pang J, Ibarlucea B, Hou C, Cao Y, Zhou W, Liu H, Cuniberti G. Toward Smart Sensing by MXene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206126. [PMID: 36517115 DOI: 10.1002/smll.202206126] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2022] [Revised: 11/17/2022] [Indexed: 06/17/2023]
Abstract
The Internet of Things era has promoted enormous research on sensors, communications, data fusion, and actuators. Among them, sensors are a prerequisite for acquiring the environmental information for delivering to an artificial data center to make decisions. The MXene-based sensors have aroused tremendous interest because of their extraordinary performances. In this review, the electrical, electronic, and optical properties of MXenes are first introduced. Next, the MXene-based sensors are discussed according to the sensing mechanisms such as electronic, electrochemical, and optical methods. Initially, biosensors are introduced based on chemiresistors and field-effect transistors. Besides, the wearable pressure sensor is demonstrated with piezoresistive devices. Third, the electrochemical methods include amperometry and electrochemiluminescence as examples. In addition, the optical approaches refer to surface plasmonic resonance and fluorescence resonance energy transfer. Moreover, the prospects are delivered of multimodal data fusion toward complicated human-like senses. Eventually, future opportunities for MXene research are conveyed in the new material discovery, structure design, and proof-of-concept devices.
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Affiliation(s)
- Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan, 250022, China
| | - Shirong Huang
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Hao Jia
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan, 250022, China
| | - Bergoi Ibarlucea
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
| | - Chongyang Hou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan, 250022, China
| | - Yu Cao
- Key Laboratory of Modern Power System Simulation and Control and Renewable Energy Technology (Ministry of Education), Northeast Electric Power University, Jilin, 132012, China
- School of Electrical Engineering, Northeast Electric Power University, Jilin, 132012, China
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan, 250022, China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan, 250022, China
- State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan, 250100, China
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
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8
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Li Z, Wei Y, Liu Y, Yan S, Wu M. Dual Strategies of Metal Preintercalation and In Situ Electrochemical Oxidization Operating on MXene for Enhancement of Ion/Electron Transfer and Zinc-Ion Storage Capacity in Aqueous Zinc-Ion Batteries. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206860. [PMID: 36646513 PMCID: PMC10015861 DOI: 10.1002/advs.202206860] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 12/15/2022] [Indexed: 05/27/2023]
Abstract
As an emerging two-dimensional material, MXenes exhibit enormous potentials in the fields of energy storage and conversion, due to their superior conductivity, effective surface chemistry, accordion-like layered structure, and numerous ordered nanochannels. However, interlayer accumulation and chemical sluggishness of structural elements have hampered the demonstration of the superiorities of MXenes. By metal preintercalation and in situ electrochemical oxidization strategies on V2 CTx , MXene has enlarged its interplanar spacing and excited the outermost vanadium atoms to achieve frequent transfer and high storage capacity of Zn ions in aqueous zinc-ion batteries (ZIBs). Benefiting from the synergistic effects of these strategies, the resulting VOx /Mn-V2 C electrode exhibits the high capacity of 530 mA h g-1 at 0.1 A g-1 , together with a remarkable energy density of 415 W h kg-1 and a power density of 5500 W kg-1 . Impressively, the electrode delivers excellent cycling stability with Coulombic efficiency of nearly 100% in 2000 cycles at 5 A g-1 . The satisfactory electrochemical performances bear comparison with those in reported vanadium-based and MXene-based aqueous ZIBs. This work provides a new methodology for safe preparation of outstanding vanadium-based electrodes and extends the applications of MXenes in the energy storage field.
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Affiliation(s)
- Zhonglin Li
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Yifan Wei
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- College of ChemistryFuzhou UniversityFuzhou350108P. R. China
| | - Yongyao Liu
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
| | - Shuai Yan
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- College of ChemistryFuzhou UniversityFuzhou350108P. R. China
| | - Mingyan Wu
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
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9
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Li RH, Lin Q, Li SL, Sun Y, Liu Y. MXenes Functionalized with Macrocyclic Hosts: From Molecular Design to Applications. Chempluschem 2023; 88:e202200423. [PMID: 36680301 DOI: 10.1002/cplu.202200423] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 01/06/2023] [Indexed: 01/11/2023]
Abstract
Two-dimensional (2D) MXene has aroused wide attention for its excellent physical and chemical properties. The interlayer engineering formed by layer-by-layer stacking of MXene nanosheets can be employed for molecular sieving and water purification by incorporating specific groups onto the exterior surface of MXene. Macrocyclic hosts exhibiting unique structural features and recognition ability can construct smart devices for external stimuli with reversible features between macrocycles and guests. On that basis, macrocyclic hosts can be anchored to MXene to provide numerous insights into their compositions and intercalation states. In this review, the MXene prepared based on macrocyclic hosts from molecular design to applications is highlighted. Various MXenes functionalized with macrocyclic hosts are empowered in functional membrane (including water purification, organic solvent nanofiltration, and electromagnetic shielding), photocatalysis, sensing, and adsorption (interactions with specific guest). Hopefully, this review can bring new inspiration to the design of multifunctional MXene-based materials and improving its practical applications.
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Affiliation(s)
- Run-Hao Li
- School of Materials Science and Engineering, Tiangong University, Tianjin, 300387, P. R. China
| | - Qian Lin
- State Key Laboratory of Separation Membrane and Membrane Process & Tianjin Key Laboratory of Green Chemical Technology and Process Engineering School of Chemistry, Tiangong University, Tianjin, 300387, P. R. China
| | - Shu-Lan Li
- State Key Laboratory of Separation Membrane and Membrane Process & Tianjin Key Laboratory of Green Chemical Technology and Process Engineering School of Chemistry, Tiangong University, Tianjin, 300387, P. R. China
| | - Yue Sun
- State Key Laboratory of Separation Membrane and Membrane Process & Tianjin Key Laboratory of Green Chemical Technology and Process Engineering School of Chemistry, Tiangong University, Tianjin, 300387, P. R. China
| | - Yi Liu
- School of Materials Science and Engineering, Tiangong University, Tianjin, 300387, P. R. China.,State Key Laboratory of Separation Membrane and Membrane Process & Tianjin Key Laboratory of Green Chemical Technology and Process Engineering School of Chemistry, Tiangong University, Tianjin, 300387, P. R. China
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10
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Li T, Cao J, Gao H, Wang Z, Geiwitz M, Burch KS, Ling X. Epitaxial Atomic Substitution for MoS 2-MoN Heterostructure Synthesis. ACS APPLIED MATERIALS & INTERFACES 2022; 14:57144-57152. [PMID: 36516339 DOI: 10.1021/acsami.2c16425] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Integrating different two-dimensional (2D) crystals is highly demanded for advancing their application in next-generation electronics. 2D transition metal carbides, nitrides, and carbonitrides (MXenes), as new members in the 2D family, are promising candidates for 2D electrodes because of their high conductivity and stability. However, integrating MXenes with other 2D semiconductors has been underdeveloped due to the limitation of top-down etching synthesis of MXenes. Our recent development of atomic substitution synthesis achieved ultrathin non-van der Waals (non-vdW) transition metal nitrides (TMNs) through the conversion of vdW transition metal dichalcogenides (TMDs), opening opportunities of combining TMDs with TMNs via controllable partial conversion. Here, we perform an in-depth study of the atomic substitution process from semiconducting MoS2 to metallic MoN and realize both lateral and vertical MoN-MoS2 heterostructures via edge and surface epitaxial conversion, respectively. The structural evolution investigation from MoS2 to MoN using high-resolution transmission electron microscopy suggests atomically bonded interface for lateral heterostructures and moiré pattern in vertical heterostructures. Moreover, mask-assisted atomic substitution is applied to create patterned MoN-MoS2-MoN lateral heterostructures. Electrical measurements reveal a Schottky barrier height of meV for a three-layer MoS2-MoN interface, showcasing the potential of atomically bonded lateral heterostructures for MoS2 electronics with MoN as contact electrodes.
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Affiliation(s)
- Tianshu Li
- Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
| | - Jun Cao
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Hongze Gao
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Zifan Wang
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Michael Geiwitz
- Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, United States
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, United States
| | - Xi Ling
- Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- The Photonics Center, Boston University, Boston, Massachusetts 02215, United States
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Zang C, Li B, Sun Y, Feng S, Wang XZ, Wang X, Sun DM. Uniform self-rectifying resistive random-access memory based on an MXene-TiO 2 Schottky junction. NANOSCALE ADVANCES 2022; 4:5062-5069. [PMID: 36504734 PMCID: PMC9680946 DOI: 10.1039/d2na00281g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 10/08/2022] [Indexed: 06/17/2023]
Abstract
For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barrier modulation enables resistive switching through charge trapping/de-trapping at the top-electrode/oxide interface, which is effective for improving the uniformity of RRAM devices. Here, we report a uniform RRAM device based on a MXene-TiO2 Schottky junction. The defect traps within the MXene formed during its fabricating process can trap and release the charges at the MXene-TiO2 interface to modulate the Schottky barrier for the resistive switching behavior. Our devices exhibit excellent current on-off ratio uniformity, device-to-device reproducibility, long-term retention, and endurance reliability. Due to the different carrier-blocking abilities of the MXene-TiO2 and TiO2-Si interface barriers, a self-rectifying behavior can be obtained with a rectifying ratio of 103, which offers great potential for large-scale RRAM applications based on MXene materials.
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Affiliation(s)
- Chao Zang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Physical Science and Technology, ShanghaiTech University 393 Huaxiazhong Road Shanghai 200031 China
| | - Xin-Zhe Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Xiaohui Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
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