Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

Optimization of CdS/MoS2 Photocatalysts for Phonon-Enhanced H2 Evolution via Indirect Transition Modulation in Layer-Dependent MoS2

Rational modulation in the transition distribution of electronic band structure is crucial for constructing phonon-induced enhancement effects for efficient charge separation and thus improving the photocatalytic activity of heterogeneous semiconductor systems. Herein, the indirect/direct transition modulation of layer-dependent MoS2 has been systematically investigated and modeled as a noble metal-free cocatalyst model to study the spatial behavior of carriers in the presence of the phonon effect by coupling it to the direct semiconductor CdS. Consequently, photocarrier separation at the heterojunction interface is greatly facilitated by the optimized band-matching mechanism, while phonon-interfered recombination achieves lifetime extension, which is further elucidated by theoretical simulations. Notably, the water reduction properties of the optimal CdS/MoS2 system exhibit a striking apparent quantum efficiency (31.33% at 380 nm), with an H2 evolution rate as high as 9.70 mmol h-1 g-1, which is 7.58 times higher than that of pristine CdS. Overall, this work demonstrates the capability of involved phonons for enhancing charge transfer dynamics, and provides great flexibility for precisely designing superior photocatalytic systems by manipulating the electronic band transformation.

Controllable p-type doping and improved conductance of few-layer WSe2via Lewis acid

Manipulation of the electronic properties of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Surface charge transfer doping is considered to be a powerful technique to regulate the carrier density of TMDs. Herein, the controllable p-type surface modification of few-layer WSe2by FeCl3Lewis acid with different doping concentrations have been achieved. Effective hole doping of WSe2has been demonstrated using Raman spectra and XPS. Transport properties indicated the p-type FeCl3surface functionalization significantly increased the hole concentration with 1.2 × 1013cm-2, resulting in 6 orders of magnitude improvement for the conductance of FeCl3-modified WSe2compared with pristine WSe2. This work provides a promising approach and facilitate the further advancement of TMDs in electronic and optoelectronic applications.

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications

Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility µp ≈  1.4 cm2V-1s-1 and a subthreshold swing SS ≈ 10 V dec-1. Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R ≈ 10 mAW-1 at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.

Giant Optical Anisotropy Induced by Magnetic Order in FePS3/WSe2 Heterostructures

Magnetic 2D materials offer a promising platform for manipulating quantum states at the nanoscale. Recent studies have underscored the significant influence of 2D magnetic materials on the optical behaviors of transition-metal dichalcogenides (TMDs), revealing phenomena such as interlayer exciton-magnon interactions, magnetization-dependent valley polarization, and an enhanced Zeeman effect. However, the controlled manipulation of anisotropic optical properties in TMDs via magnetism remains challenging. Here, the magnetic ordering in FePS3 profoundly impacts the optical characteristics of WSe2, achieving a giant linear polarization degree of 5.1 in exciton emission is demonstrated. This is supported by a detailed analysis of low-temperature photoluminescence (PL) and Raman spectra from nL-FePS3/WSe2 heterostructures. These findings indicate that a phase transition in FePS3 from paramagnetic to antiferromagnetic enhances interlayer Coulomb interactions, inducing a transition from non-polar to polar behavior in the heterostructures. Additionally, valley-polarized PL spectra under magnetic fields from -9 to 9 T reveal the influence of FePS3 on valley polarization and Zeeman splitting of excitons in monolayer WSe2. These results present a novel strategy for tailoring the optoelectronic properties of 2D magnetic van der Waals heterostructures, paving the way for advancements in nanoscale device design.

Electrical Polarity Modulation in V-Doped Monolayer WS2 for Homogeneous CMOS Inverters

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.

Thin Conducting Films: Preparation Methods, Optical and Electrical Properties, and Emerging Trends, Challenges, and Opportunities

Thin conducting films are distinct from bulk materials and have become prevalent over the past decades as they possess unique physical, electrical, optical, and mechanical characteristics. Comprehending these essential properties for developing novel materials with tailored features for various applications is very important. Research on these conductive thin films provides us insights into the fundamental principles, behavior at different dimensions, interface phenomena, etc. This study comprehensively analyzes the intricacies of numerous commonly used thin conducting films, covering from the fundamentals to their advanced preparation methods. Moreover, the article discusses the impact of different parameters on those thin conducting films' electronic and optical properties. Finally, the recent future trends along with challenges are also highlighted to address the direction the field is heading towards. It is imperative to review the study to gain insight into the future development and advancing materials science, thus extending innovation and addressing vital challenges in diverse technological domains.

Unveiling the photocatalytic potential of graphitic carbon nitride (g-C3N4): a state-of-the-art review

Graphitic carbon nitride (g-C3N4)-based materials have emerged as promising photocatalysts due to their unique band structure, excellent stability, and environmental friendliness. This review provides a comprehensive and in-depth analysis of the current state of research on g-C3N4-based photocatalysts. The review summarizes several strategies to improve the photocatalytic performance of pristine g-C3N4, e.g., by creating heterojunctions, doping with non-metallic and metallic materials, co-catalyst loading, tuning catalyst morphology, metal deposition, and nitrogen-defect engineering. The review also highlights the various characterization techniques employed to elucidate the structural and physicochemical features of g-C3N4-based catalysts, as well as their applications of in photocatalytic degradation and hydrogen production, emphasizing their remarkable performance in pollutants' removal and clean energy generation. Furthermore, this review article investigates the effect of operational parameters on the catalytic activity and efficiency of g-C3N4-based catalysts, shedding light on the key factors that influence their performance. The review also provides insights into the photocatalytic pathways and reaction mechanisms involving g-C3N4 based photocatalysts. The review also identifies the research gaps and challenges in the field and presents prospects for the development and utilization of g-C3N4-based photocatalysts. Overall, this comprehensive review provides valuable insights into the synthesis, characterization, applications, and prospects of g-C3N4-based photocatalysts, offering guidance for future research and technological advancements in this rapidly growing field.

In Situ Growth of Wafer-Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n-AlGaN Heterojunction for Visual Learning

The unique optical and electrical properties of graphene-based heterojunctions make them significant for artificial synaptic devices, promoting the advancement of biomimetic vision systems. However, mass production and integration of device arrays are necessary for visual imaging, which is still challenging due to the difficulty in direct growth of wafer-scale graphene patterns. Here, a novel strategy is proposed using photosensitive polymer as a solid carbon source for in situ growth of patterned graphene on diverse substrates. The growth mechanism during high-temperature annealing is elucidated, leading to wafer-scale graphene patterns with exceptional uniformity, ideal crystalline quality, and precise control over layer number by eliminating the release of volatile from oxygen-containing resin. The growth strategy enables the fabrication of two-inch optoelectronic artificial synaptic device array based on graphene/n-AlGaN heterojunction, which emulates key functionalities of biological synapses, including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity. Moreover, the mimicry of visual learning in the human brain is attributed to the regulation of excitatory and inhibitory post-synapse currents, following a learning rule that prioritizes initial recognition before memory formation. The duration of long-term memory reaches 10 min. The in situ growth strategy for patterned graphene represents the novelty for fabricating fundamental hardware of an artificial neuromorphic system.

A synergistic heterojunction of SnS2/SnSSe nanosheets on GaN for advanced self-powered photodetectors

Tin-based TMDCs are gaining traction in optoelectronics due to their eco-friendliness and easy synthesis, contrasting Mo/W-based counterparts. This study pioneers the solvothermal synthesis of highly crystalline SnSSe alloy, akin to Janus structures, bridging a notable research gap. By integrating SnS2/SnSSe materials onto a GaN platform, a synergistic heterojunction is created, enhancing light absorption and the electron-hole pair separation efficiency, demonstrating a self-powered photodetection. The GaN/SnS2/SnSSe heterojunction showcases a staircase-like (type-II) band alignment and exceptional performance metrics: high photoresponsivity of 314.96 A W-1, specific detectivity of 2.0 × 1014 jones, and external quantum efficiency of 10.7 × 104% under 365 nm illumination at 150 nW cm-2 intensity and 3 V bias. Notably, the device displays intensity-dependent photocurrent and photoswitching behaviors without external bias, highlighting its unique self-powered attributes. This study underscores SnS2's significance in optoelectronics and explores SnSSe integration into van der Waals heterostructures, promising advanced photodetection devices and bias-free optoelectronics.

Room temperature thermal rectification in suspended asymmetric graphene ribbon

Thermal rectifiers are essential in optimizing heat dissipation in solid-state devices to enhance energy efficiency, reliability, and overall performance. In this study, we experimentally investigate the thermal rectification phenomenon in suspended asymmetric graphene ribbons (GRs). The asymmetry within the graphene is introduced by incorporating periodic parallel nanoribbons on one side of the GR while maintaining the other side in a pristine form. Our findings reveal a substantial thermal rectification effect in these asymmetric graphene devices, reaching up to 45% at room temperature and increasing further at lower environmental temperatures. This effect is attributed to a significant thermal conductivity contrast between pristine graphene and nanoribbon graphene within the asymmetric structure. We observe that the incorporation of nanoribbons leads to a notable reduction in thermal conductivity, primarily due to phonon scattering and bottleneck effects near the nanoribbon edges. These findings suggest that graphene structures exhibiting asymmetry, facilitated by parallel nanoribbons, hold promise for effective heat management at the nanoscale level and the development of practical phononic devices.

Semiconducting polymer dots for multifunctional integrated nanomedicine carriers

The expansion applications of semiconducting polymer dots (Pdots) among optical nanomaterial field have long posed a challenge for researchers, promoting their intelligent application in multifunctional nano-imaging systems and integrated nanomedicine carriers for diagnosis and treatment. Despite notable progress, several inadequacies still persist in the field of Pdots, including the development of simplified near-infrared (NIR) optical nanoprobes, elucidation of their inherent biological behavior, and integration of information processing and nanotechnology into biomedical applications. This review aims to comprehensively elucidate the current status of Pdots as a classical nanophotonic material by discussing its advantages and limitations in terms of biocompatibility, adaptability to microenvironments in vivo, etc. Multifunctional integration and surface chemistry play crucial roles in realizing the intelligent application of Pdots. Information visualization based on their optical and physicochemical properties is pivotal for achieving detection, sensing, and labeling probes. Therefore, we have refined the underlying mechanisms and constructed multiple comprehensive original mechanism summaries to establish a benchmark. Additionally, we have explored the cross-linking interactions between Pdots and nanomedicine, potential yet complete biological metabolic pathways, future research directions, and innovative solutions for integrating diagnosis and treatment strategies. This review presents the possible expectations and valuable insights for advancing Pdots, specifically from chemical, medical, and photophysical practitioners' standpoints.

Potassium hydroxide treatment of layered WSe2 with enhanced electronic performances

2D WSe2-based electronic devices have received much research interest. However, it is still a challenge to achieve high electronic performance in WSe2-based devices. In this work, we report greatly enhanced performances of different thickness WSe2 ambipolar transistors and demonstrate homogeneous WSe2 inverter devices, which are obtained by using a semiconductor processing-compatible layer removal technique via chemical removal of the surface top WOx layer formed by O2 plasma treatment. Importantly, monolayer WSe2 was realised after several consecutive removal processes, demonstrating that the single layer removal is accurate and reliable. After subsequent removal of the top layer WOx by KOH, the fabricated WSe2 field-effect transistors exhibit greatly enhanced electronic performance along with the high electron and hole mobilities of 40 and 85 cm2 V-1 s-1, respectively. Our work demonstrates that the layer removal technique is an efficient route to fabricate high performance 2D material-based electronic devices.

Exploring and Engineering 2D Transition Metal Dichalcogenides toward Ultimate SERS Performance

Surface-enhanced Raman spectroscopy (SERS) is an ultrasensitive surface analysis technique that is widely used in chemical sensing, bioanalysis, and environmental monitoring. The design of the SERS substrates is crucial for obtaining high-quality SERS signals. Recently, 2D transition metal dichalcogenides (2D TMDs) have emerged as high-performance SERS substrates due to their superior stability, ease of fabrication, biocompatibility, controllable doping, and tunable bandgaps and excitons. In this review, a systematic overview of the latest advancements in 2D TMDs SERS substrates is provided. This review comprehensively summarizes the candidate 2D TMDs SERS materials, elucidates their working principles for SERS, explores the strategies to optimize their SERS performance, and highlights their practical applications. Particularly delved into are the material engineering strategies, including defect engineering, alloy engineering, thickness engineering, and heterojunction engineering. Additionally, the challenges and future prospects associated with the development of 2D TMDs SERS substrates are discussed, outlining potential directions that may lead to significant breakthroughs in practical applications.

Recent Advances in Two-Dimensional Nanomaterials for Healthcare Monitoring

The development of advanced technologies for the fabrication of functional nanomaterials, nanostructures, and devices has facilitated the development of biosensors for analyses. Two-dimensional (2D) nanomaterials, with unique hierarchical structures, a high surface area, and the ability to be functionalized for target detection at the surface, exhibit high potential for biosensing applications. The electronic properties, mechanical flexibility, and optical, electrochemical, and physical properties of 2D nanomaterials can be easily modulated, enabling the construction of biosensing platforms for the detection of various analytes with targeted recognition, sensitivity, and selectivity. This review provides an overview of the recent advances in 2D nanomaterials and nanostructures used for biosensor and wearable-sensor development for healthcare and health-monitoring applications. Finally, the advantages of 2D-nanomaterial-based devices and several challenges in their optimal operation have been discussed to facilitate the development of smart high-performance biosensors in the future.

Synthesis of 2D layered transition metal (Ni, Co) hydroxides via edge-on condensation

Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two-dimensional (2D) LTMHs remain largely understudied in terms of physical properties and applications in electronic devices. Here, for the first time we report > 20 μm α-Ni(OH)2 2D crystals, synthesized from hydrothermal reaction. And an edge-on condensation mechanism assisted with the crystal field geometry is proposed to understand the 2D intra-planar growth of the crystals, which is also testified through series of systematic comparative studies. We also report the successful synthesis of 2D Co(OH)2 crystals (> 40 μm) with more irregular shape due to the slightly distorted octahedral geometry of the crystal field. Moreover, the detailed structural characterization of synthesized α-Ni(OH)2 are performed. The optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and the electronic bandgap is measured as 2.52 eV from reflected electrons energy loss spectroscopy (REELS). We further demonstrate its potential as a wide bandgap (WBG) semiconductor for high voltage operation in 2D electronics with a high breakdown strength, 4.77 MV/cm with 4.9 nm thickness. The successful realization of the 2D LTMHs opens the door for future exploration of more fundamental physical properties and device applications.

Ultrahigh UV Responsivity Quasi-Two-Dimensional BixSn1-xO2 Films Achieved through Surface Reaction

In this study, quasi-two-dimensional BixSn1-xO2 (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 103 s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO2, and Na2SO3 after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.