Photodetectors Based on Organic-Inorganic Hybrid Lead Halide Perovskites

Heavy-Atom Effect Regulating Room-Temperature Phosphorescence of Organic-Inorganic Zn-Based Halides for White-Light Emission

Organic-inorganic metal halides (OIMHs) with room-temperature phosphorescence (RTP) properties have aroused great research enthusiasm as outstanding broadband white-light emitters. Current studies on OIMHs with white-light emission were achieved via self-trapped excitons (STEs), but the unclear mechanism of STE formation is not favorable for the design of materials. In this work, zero-dimensional OIMHs composed of organic 3,4,5-trimethoxybenzylamine (TBA) and zine halide were synthesized, which enhanced the ratio of the RTP emission to the fluorescence emission from the TBA ligand. The experimental and mechanistic analyses demonstrate that the manageable RTP is mainly caused by the heavy-atom effect. In particular, by adjusting the incorporation ratio of halogen, an obvious white-light emission with a chromaticity coordinate value of (0.31, 0.33) can be achieved. This work developed a method for regulating the RTP of OIMHs with the heavy-atom effect to realize white-light emission, providing a new idea for the design of white-light emission materials.

A Polarization-Sensitive Photodetector with Patterned CH3NH3PbCl3 Film

Perovskite photodetectors with polarization-sensitive properties have gained significant attention due to their potential applications in fields such as imaging and remote sensing. Most perovskite photodetectors concentrate on iodine (I) or bromine (Br)-based materials, primarily due to their straightforward fabrication techniques. The utilization of chloride (Cl)-based perovskites with wider bandgaps, such as CH3NH3PbCl3, is relatively limited. In this work, polarized perovskite photodetectors are prepared by a patterned spatially confined method with polarization sensitivity and excellent optoelectronic properties. The patterned perovskite photodetectors (PP-PDs) not only exhibit outstanding photoelectric conversion performance but also demonstrate polarization sensitivity. PP-PDs showcase remarkable performance, including on/off ratios of 3.4 × 104, an extremely low dark current of 1.56 × 10-11 A, and a rapid response time of microseconds. The responsivity and detectivity of PP-PDs reach 10.6 A W-1 and 3 × 1012 Jones, respectively, positioning them as among the highest-performing MAPbCl3-based photodetectors reported to date. Furthermore, polarization layered imaging sensing is achieved using stepwise scanning of the device. This work provides innovative ideas for realizing high-performance polarized perovskite photodetectors.

1D Pb halide perovskite-like materials for high performance X-ray detection

The strategy of bandgap regulation is important for X-ray detection, but has not been reported for 1D Pb halide perovskite materials. In this work, three such materials, 1, 2 and 3, with a tunable bandgap, were fabricated for application in X-ray detection. 3 shows high sensitivity, far superior to commercial X-ray detectors.

How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots

Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core-shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).

Tunable Periodic Nanopillar Array for MAPbI3 Perovskite Photodetectors with Improved Light Absorption

In the field of optoelectronic applications, the vigorous development of organic-inorganic hybrid perovskite materials, such as methylammonium lead triiodide (MAPbI3), has spurred continuous research on methods to enhance the photodetection performance. Periodic nanoarrays can effectively improve the light absorption of perovskite thin films. However, there are still challenges in fabricating tunable periodic patterned and large-area perovskite nanoarrays. In this study, we present a cost-effective and facile approach utilizing nanosphere lithography and dry etching techniques to create a large-area Si nanopillar array, which is employed for patterning MAPbI3 thin films. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) results reveal that the introduction of nanopillar structures did not have a significant adverse effect on the crystallinity of the MAPbI3 thin film. Light absorption tests and optical simulations indicate that the nanopillar array enhances the light intensity within the perovskite films, leading to photodetectors with a responsivity of 11.2 A/W and a detectivity of 7.3 × 1010 Jones at 450 nm in wavelength. Compared with photodetectors without nanostructures, these photodetectors exhibit better visible light absorption. Finally, we demonstrate the application of these photodetector arrays in a prototype image sensor.

Ultrahigh UV Responsivity Quasi-Two-Dimensional BixSn1-xO2 Films Achieved through Surface Reaction

In this study, quasi-two-dimensional BixSn1-xO2 (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 103 s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO2, and Na2SO3 after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.

Exciton-phonon coupling in two-dimensional layered (BA)2PbI4 perovskite microplates

Two-dimensional layered (BA)₂PbI₄ (BA = C₄H₉NH₃) perovskites are emerging as a new class of layered materials and show great potential in optoelectronic applications. Elucidating how exciton-phonon interaction affects the excitonic emission is of great importance for a better knowledge of their optoelectronic properties. In this letter, we synthesized high-quality (BA)₂PbI₄ microplates via solution methods, and dual-excitonic emission peaks (surface-emission and interior-emission) were detected from the as-grown samples at low temperatures. Furthermore, we determine the energies for the longitudinal optical phonon modes to be ∼27 and ∼18 meV, and the exciton-phonon coupling strengths to be ∼177 and ∼21 meV for the surface-emission and interior-emission bands, respectively. Compared to the interior-emission band, the stronger exciton-phonon interaction results in a considerable degree of spectral broadening and red-shift for the surface-emission with increasing temperature. In contrast, the (OA)₂PbI₄ (OA = C₈H₁₇NH₂) microplates with longer alkyl chains between Pb-I layers, exhibit only one excitonic emission peak, as well as a large exciton-phonon coupling strength. Our work clarifies the influence of exciton-phonon coupling on the excitonic emission of (BA)₂PbI₄ microplates, and also suggests the intrinsic relationship between the exciton-phonon coupling and the length of organic carbon chain ligands.

Formamidinium Lead Iodide Perovskite Thin Films Formed by Two-Step Sequential Method: Solvent-Morphology Relationship

Thin films made of formamidinium lead iodide (FAPbI₃) perovskites prepared by a two-step sequential deposition method using various solvents for formamidinium iodide (FAI) - isopropanol, n-butanol and tert-butanol, were studied with the aim of finding a correlation between morphology and solvent properties to improve film quality. They were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) and their photophysical properties were studied by means of absorption and photoluminescence (PL) spectroscopies. XRD patterns, absorption and PL spectra proved α-phase formation for all selected solvents. An excessive amount of PbI₂ found in perovskite films prepared with n-butanol indicates incomplete conversion. Thin film morphology, such as grain and crystallite size, depended on the solvent. Using tert-butanol, thin films with a very large grain size of up to several micrometers and with preferred crystallite orientation were fabricated. The grain size increased as follows: 0.2-0.5, 0.2-1 and 2-5 µm for isopropanol, n-butanol and tert-butanol, respectively. A correlation between the grain size and viscosity, electric permittivity and polarizability of the solvent could be considered. Our results, including fabrication of perovskite films with large grains and fewer grain boundaries, are important and of interest for many optoelectronic applications.

Hot-Injection Synthesis Protocol for Green-Emitting Cesium Lead Bromide Perovskite Nanocrystals

All-inorganic cesium lead bromide (CsPbBr₃) nanocrystals are one of the prominent members of the metal halide perovskite family of semiconductor materials, which possess considerable stability and excellent optoelectronic properties leading to a multitude of their potential applications in solar cells, light-emitting devices, photodetectors, and lasers. Hot-injection strategy is a popular method used to synthesize CsPbBr₃ nanocrystals, which provides a convenient route to produce them in the shape of rather monodisperse nanocubes. As in any synthetic procedure, there are different factors like temperature, surface ligands, precursor concentration, as well as necessary postpreparation purification steps. Herein, we provide a comprehensive hot-injection synthesis protocol for CsPbBr₃ nanocrystals, outlining intrinsic and extrinsic factors that affect its reproducibility and elucidating in detail the precursor solution preparation, nanocrystal formation and growth, and postpreparative purification and storage conditions to allow for the fabrication of high-quality green-emitting material.

Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing

Paper offers a low-cost and widely available substrate for electronics. It possesses alternative characteristics to silicon, as it shows low density and high flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In this study, we combine paper substrates with halide-mixed perovskites for the creation of low-cost and easy-to-prepare perovskite-on-paper photodetectors with a broadband-tunable spectral response. From the bandgap tunability of halide-mixed perovskites we create photodetectors with a cut-off spectral onset that ranges from the NIR to the green region, by increasing the bromide content on MAPb(I_1-xBr_x)₃ perovskite alloys. The devices show a fast and efficient response. The best performances are observed for pure I and Br perovskite compositions, with a maximum responsivity of ∼400 mA W^-1 on the MAPbBr₃ device. This study provides an example of the wide range of possibilities that the combination of solution processable materials with paper substrates offers for the development of low-cost, biodegradable and easy-to-prepare devices.

Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor

The gain-bandwidth trade-off limits the development of high-performance photodetectors; i.e., the mutual restraint between the response speed and gain has intrinsically limited performance optimization of photomultiplication phototransistors and photodiodes. Here, we show that a monolithically integrated photovoltaic transistor can solve this dilemma. In this structure, the photovoltage generated by the superimposed perovskite solar cell, acting as a float gate, is amplified by the underlying metal oxide field-effect transistor. By eliminating deep-trap defects through processing optimization, we achieved devices with a maximum responsivity close to 6 × 10⁴ A/W, a specific detectivity (D*) of 1.06 × 10¹³ Jones, and an f_3dB of 1.2 MHz at a low driving voltage of 3 V. As a result, a record gain-bandwidth product is achieved. The device further exhibits the advantage in photoplethysmography detection with weak illuminations, where our device accurately detects the detailed features that are out of the capability of conventional photodetectors.

Solution-Processed Perovskite/Metal-Oxide Hybrid X-Ray Detector and Array with Decoupled Electronic and Ionic Transport Pathways

Lead halide perovskites possess heavy elements and excellent mobility-lifetime (µτ) product, becoming desirable candidates for X-ray detectors. However, current perovskite photoconduction detectors (PCDs) with vertical geometry, where electronic signals and mobile ions share the same conduction path, are facing with extremely challenging ion-migration issue. Herein, a hybrid X-ray detector device structure, in which perovskite is vertically stacked onto an indium oxide (In₂ O₃ ) transistor with lateral transport geometry is designed, perovskite mainly acts as X-ray sensitizer to activate In₂ O₃ conduction channel, the actual electrical signal is conducted and collected in the lateral metal-oxide device. With the decoupled ionic and electronic transportation, hybrid detectors are insensitive to the ionic motion of perovskite, hence demonstrating no hysteresis and almost no shifting of baseline that are often observed in PCDs, hybrid detectors also exhibit reduced dark current, improved response time, and four times higher photocurrent signals. Finally, array integration of hybrid detectors and preliminary X-ray imaging is realized. The work provides an effective device strategy in addition to the mere material alternations to attain high-performance perovskite-based X-ray detectors and arrays.

A Red-Emitting Hybrid Manganese Halide Perovskite C5H5NOMnCl2·H2O Featuring One-Dimensional Octahedron Chains

Herein, we successfully synthesized a new organic-inorganic hybrid manganese halide perovskite C₅H₅NOMnCl₂·H₂O, in which organic molecules, water molecules (through O atoms), and Cl atoms coordinate with Mn atoms to form deformed [MnO₃Cl₃] octahedrons. Then, octahedrons form a chain through edge sharing, resulting in a 1D-chain single crystal structure. The high-quality C₅H₅NOMnCl₂·H₂O single crystal prepared by a simple solvent evaporation method produced bright red emission at 656 nm attributed to the d-d transition of Mn²⁺. Also, it has a photoluminescence quantum yield (PLQY) of 24.2%. Photoluminescence excitation and absorption spectra were both featured with multiple bands and were in good agreement with the Mn²⁺ 3d energy levels. The photoluminescence decay spectrum showed an average lifetime of 0.466 ms, which further proves the d-d transition mechanism. The C₅H₅NOMnCl₂·H₂O single crystal had a direct band gap of 1.43 eV. Moreover, a red light LED with a CCT of 1857 K was obtained based on the C₅H₅NOMnCl₂·H₂O powder, indicating its promising application in red-emitting LED.

Review on Perovskite Semiconductor Field‑Effect Transistors and Their Applications

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

Constructing a High-Quality t-Se/Si Interface Via In Situ Light Annealing of a-Se for a Self-Powered Image Sensor

The quality of the interface, e.g., the semiconductor-semiconductor or metal-semiconductor interface, is the main factor restricting the photodetection performance of a heterojunction. In this study, a high-quality Se/Si interface is constructed via in situ directional transformation of amorphous Se (a-Se) into crystalline Se (t-Se) on a Si substrate via light annealing. Benefitting from the high-quality interface and appropriate energy band between Si and Se, the t-Se/Si heterojunction exhibits an extremely high responsivity and detectivity of 583.33 mA W^-1 and 8.52 × 10¹² Jones at 760 nm, respectively. In addition, the device exhibits an ultrafast rise time of 183 µs and a decay time of 405 µs. Furthermore, an image sensor fabricated via local light annealing successfully recognizes patterns of "N," "P," and "U." This study provides valuable guidance for the construction of high-quality interfaces and the design of self-powered image sensors.

Recent advances in lead-free double perovskites for x-ray and photodetection

Over the last decade, lead halide perovskites have attracted significant research attention in the field of photovoltaics, light-emitting devices, photodetection, ionizing radiation detection, etc, owing to their outstanding optoelectrical properties. However, the commercial applications of lead-based perovskite devices are restricted due to the poor ambient stability and toxicity of lead. The encapsulation of lead-based devices can reduce the possible leakage of lead. However, it is hard to ensure safety during large-scale production and long-term storage. Recently, considerable efforts have been made to design lead-free perovskites for different optoelectronic applications. Metal halide double perovskites with the general formula of A₂M^IM^IIIX₆or A₂M^IVX₆could be potentially considered as green and stable alternatives for different optoelectronic applications. In this review article, we focus on the recent progress and findings on lead-free halide double perovskites for x-ray and UV-vis photodetection applications. Lead-free halide double perovskite has recently drawn a great deal of attention for superior x-ray detection due to its high absorption coefficient, large carrier mobility-lifetime product, and large bulk resistance. In addition, these materials exhibit good performance in photodetection in the UV-vis region due to high photocarrier generation and efficient carrier separation. In this review, first, we define the characteristics of lead-free double perovskite materials. The fundamental characteristics and beneficial properties of halide perovskites for direct and indirect x-ray detection are then discussed. We comprehensively review recent developments and efforts on lead-free double perovskite for x-ray detection and UV-vis photodetection. We bring out the current challenges and opportunities in the field and finally present the future outlook for developing lead-free double perovskite-based x-ray and UV-vis photodetectors for practical applications.

Miniaturized Multispectral Detector Derived from Gradient Response Units on Single MAPbX3 Microwire

Miniaturized multispectral detectors are urgently desired given the unprecedented prosperity of smart optoelectronic chips for integrated functions including communication, imaging, scientific analysis, etc. However, multispectral detectors require complicated prism optics or interference/interferometric filters for spectral recognition, which hampers the miniaturization and their subsequent integration in photonic integrated circuits. In this work, inspired by the advance of computational imaging, optical-component-free miniaturized multispectral detector on 4 mm gradient bandgap MAPbX₃ microwire with a diameter of 30 µm, is reported. With accurate composition engineering, halide ions in MAPbX₃ microwire vary from Cl to I giving in the gradual variation of optical bandgap from 2.96 to 1.68 eV along axis. The sensing units on MAPbX₃ microwire offer the response edge ranging from 450 to 790 nm with the responsivity over 20 mA W^-1 , -3dB width over 450 Hz, LDR of ≈60 dB, and a noise current less than ≈1.4 × 10^-12 A Hz^-0.5 . As a result, the derived miniaturized detector achieves the function of multispectral sensing and discrimination with spectral resolution of ≈25 nm and mismatch of ≈10 nm. Finally, the proof-of-concept colorful imaging is successfully conducted with the miniaturized multispectral detector to further confirm its application in spectral recognition.

Mixed Dimethylammonium/Methylammonium Lead Halide Perovskite Crystals for Improved Structural Stability and Enhanced Photodetection

The solvent acidolysis crystallization technique is utilized to grow mixed dimethylammonium/methylammonium lead tribromide (DMA/MAPbBr₃ ) crystals reaching the highest dimethylammonium incorporation of 44% while maintaining the 3D cubic perovskite phase. These mixed perovskite crystals show suppression of the orthorhombic phase and a lower tetragonal-to-cubic phase-transition temperature compared to MAPbBr₃ . A distinct behavior is observed in the temperature-dependent photoluminescence properties of MAPbBr₃ and mixed DMA/MAPbBr₃ crystals due to the different organic cation dynamics governing the phase transition(s). Furthermore, lateral photodetectors based on these crystals show that, at room temperature, the mixed crystals possess higher detectivity compared to MAPbBr₃ crystals caused by structural compression and reduced surface trap density. Remarkably, the mixed-crystal devices exhibit large enhancement in their detectivity below the phase-transition temperature (at 200 K), while for the MAPbBr₃ devices only insignificant changes are observed. The high detectivity of the mixed crystals makes them attractive for visible-light communication and for space applications. The results highlight the importance of the synthetic technique for compositional engineering of halide perovskites that governs their structural and optoelectronic properties.

A bilayered two-dimensional hybrid perovskite with a cage-templated secondary cation for high efficiency photodetection

A novel two-dimensional hybrid perovskite (IA)2(DMA)Pb2Br7 was obtained by introducing a large secondary cation DMA+ into the PbBr6 framework. A highly efficient array photodetector has been assembled using its crystal.

Photoelectric effect of hybrid ultraviolet-sensitized phototransistors from an n-type organic semiconductor and an all-inorganic perovskite quantum dot photosensitizer

Low-dimensional all-inorganic perovskite quantum dots (QDs) have been increasingly developed as photo-sensing materials in the field of photodetectors because of their strong light-absorption capability and broad bandgap tunability. Here, solution-processed hybrid phototransistors built by a dithienothiophenoquinoid (DTTQ) n-type organic semiconductor transport channel mixing with a colloidal CsPbBr₃ perovskite QD photosensitizer are demonstrated by manipulating the relative volume ratio from 10 : 0 to 9 : 1, 7 : 3, 5 : 5, 3 : 7, 1 : 9, and 0 : 10. This results in a significantly enhanced photodetection performance owing to the advantages of a high UV absorption cross-section based on the perovskite QDs, efficient carrier transport abilities from the DTTQ semiconductor, and the photogating effect between the bulk heterojunction photocarrier transfer interfaces. The optimized DTTQ : QD (3 : 7) hybrid phototransistor achieves a high photoresponsivity (R) of 7.1 × 10⁵ A W^-1, a photosensitivity (S) of 1.8 × 10⁴, and a photodetectivity (D) of 3.6 × 10¹³ Jones at 365 nm. Such a solution-based fabrication process using a hybrid approach directly integrated into a sensitized phototransistor potentially holds promising photoelectric applications towards advanced light-stimulated photodetection.

Perovskite photodetectors and their application in artificial photonic synapses

Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.

Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBi₃I₁₀ is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the I_light/I_dark ratio of 10³ for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBi₃I₁₀, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.

Enhanced Photodetection Performance of Photodetectors Based on Indium-Doped Tin Disulfide Few Layers

Two dimensional (2D) tin disulfide (SnS₂) has attracted growing interest as a promising high performance photodetector with superior performance such as fast response time, high responsivity, and good stability. However, SnS₂-based photodetectors still face great challenges, and the photodetection performance needs to be improved for practical applications. Herein, indium-doped SnS₂ (In-SnS₂) few layers were exfoliated from CVT-grown single crystals, which were synthesized by chemical vapor transport. Photodetectors based on In-SnS₂ few layers were fabricated and detected. Compared with photodetectors based on pristine SnS₂, photodetectors based on In-SnS₂ few layers exhibited better photodetection performances, including higher responsivities, higher external quantum efficiencies, and greater normalized detectivities. The responsivity (R), external quantum efficiency (EQE), and normalized detectivity (D*) were increased by up to 2 orders of magnitude after In doping. Considering responsivity and response time, the photodetector based on 1.4 at. % In-SnS₂ few layers exhibited an optimal photodetection performance with a high R of 153.8 A/W, a high EQE of 4.72 × 10⁴ %, a great D* of 5.81 × 10¹² Jones, and a short response time of 13 ms. Our work provides an efficient path to enhance photodetection performances of photodetectors based on SnS₂ for future high-performance optoelectronic applications.

In-Plane Anisotropic Nonlinear Optical Properties of Two-Dimensional Organic-Inorganic Hybrid Perovskite

Two-dimensional (2D) organic-inorganic hybrid perovskites (OIHPs) with superior nonlinear optical (NLO) properties show great versatility in frequency upconversion applications. Optical anisotropy plays an indispensable role in interpreting the interactions between incoming photons and crystal structure. Recently, the in-plane anisotropic NLO properties of 2D OIHPs have been reported and attracted much attention. However, the structure-related NLO anisotropy of the 2D OIHP framework is not well-established. Here, NLO properties of (C₆H₅(CH₂)₂NH₃)₂PbI₄ (PEPI), (C₆H₁₁NH₃)₂PbI₄ (C6H11), and (C₄H₉NH₃)₂PbI₄ (C4PI) were systematically studied to interrogate the correlation between the in-plane anisotropic NLO responses and its lattice structure. In-plane nonparametric NLO responses, e.g., two-photon photoluminescence (2PPL) and three-photon photoluminescence (3PPL), manifest similar anisotropy configurations for PEPI, C6H11, and C4PI regardless of aromatic, cyclic, or linear organic molecules; however, the anisotropies of THG signals are strongly dependent on the specific crystal structures of the individual flakes, and they are much higher than that of the multiphoton excited photoluminescence.

Light Management With Grating Structures in Optoelectronic Devices

Ordered and patterned micro/nanostructure arrays have emerged as powerful platforms for optoelectronic devices due to their unique ordered-dependent optical properties. Among various structures, grating structure is widely applied because of its simple fabrication process, easy adjusting of size and morph, and efficient light trapping. Herein, we summarized recent developments of light management with grating structures in optoelectronic devices. Typical mechanisms about the grating structures in optoelectronic devices have been reviewed. Moreover, the applications of grating structures in various optoelectronic devices have been presented. Meanwhile, the remaining bottlenecks and perspectives for future development have been discussed.

Carrier Blocking Layer Materials and Application in Organic Photodetectors

As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using solution processes and a tunable spectral response range, making them particularly attractive for large area image sensors on lightweight flexible substrates. Carrier blocking layers engineering is very important to the high performance of OPDs that can select a certain charge carriers (holes or electrons) to be collected and suppress another carrier. Carrier blocking layers of OPDs play a critical role in reducing dark current, boosting their efficiency and long-time stability. This Review summarizes various materials for carrier blocking layers and some of the latest progress in OPDs. This provides the reader with guidelines to improve the OPD performance via carrier blocking layers engineering.

Recent Advances in Perovskite Photodetectors for Image Sensing

In recent years, metal halide perovskites have been widely investigated to fabricate photodetectors for image sensing due to the excellent photoelectric performance, tunable bandgap, and low-cost solution preparation process. In this review, a comprehensive overview of the recent advances in perovskite photodetectors for image sensing is provided. First, the key performance parameters and the basic device types of photodetectors are briefly introduced. Then, the recent developments of image sensors on the basis of different dimensional perovskite materials, including 0D, 1D, 2D, and 3D perovskite materials, are highlighted. Besides the device structures and photoelectric properties of perovskite image sensors, the preparation methods of perovskite photodetector arrays are also analyzed. Subsequently, the single-pixel imaging of perovskite photodetectors and the strategies to fabricate narrowband perovskite photodetectors for color discrimination are discussed. Finally, the potential challenges and possible solutions for the future development of perovskite image sensors are presented.

Perovskite random lasers: a tunable coherent light source for emerging applications

Metal halide perovskites have attracted increasing attention due to their superior optical and electrical characteristics, flexible tunability, and easy fabrication processes. Apart from their unprecedented successes in photovoltaic devices, lasing action is the latest exploitation of the optoelectronic performance of perovskites. Among the substantial body of research on the configuration design and light emission quality of perovskite lasers, the random laser is a very interesting stimulated emission phenomenon with unique optical characteristics. In this review article, we first comprehensively overview the development of perovskite-based optoelectronic devices and then focus our discussion on random lasing performance. After an introduction to the historical development of versatile random lasers and perovskite random lasers, we summarize several synthesis methods and discuss their material configurations and stability in synthesized perovskite materials. Following this, a theoretical approach is provided to explain the random lasing mechanism in metal halide perovskites. Finally, we propose future applications of perovskite random lasers, presenting conclusions as well as future challenges, such as quality stability and toxicity reduction, of perovskite materials with regard to practical applications in this promising field.

Enhanced Stability of All-Inorganic Perovskite Light-Emitting Diodes by a Facile Liquid Annealing Strategy

Ensuring the stability of all-inorganic halide perovskite light-emitting diodes (LEDs) has become an obstacle that needs to be broken for commercial applications. Currently, lead halide perovskite CsPbX₃ (X = Br, I, Cl) nanocrystals (NCs) are considered as alternative materials for future fluorescent lighting devices due to their combination of superior optical and electronic properties. However, the temperature of the surface of the LEDs will increase after long-term power-on work, which greatly affects the optical stability of CsPbX₃ NCs. In order to overcome this bottleneck issue, a strategy of annealing perovskite materials in liquid is proposed, and the changes in photoluminescence and electroluminescence (EL) behaviors before and after annealing are studied. The results show that the luminescence stability of the annealed perovskite materials is significantly improved. Moreover, the EL stability of different perovskite LED devices under long-term operation is monitored, and the performance of the annealed materials is particularly outstanding. The results have proved that this convenient and low-cost liquid annealing strategy is suitable for large-scale postprocessing of perovskite materials, granting them stable fluorescence emission, which will bring a new dawn to the commercialization of next-generation optoelectronic devices.

Fabrication of Addressable Perovskite Film Arrays for High-Performance Photodetection and Real-Time Image Sensing Application

Patterned growth of periodic perovskite film arrays is essential for application in sensing devices and integrated optoelectronic systems. Herein, we report on patterned growth of addressable perovskite photodetector arrays through an uncured polydimethylsiloxane (PDMS) oligomer-assisted solution-processed approach, in which a periodic hydrophilic/hydrophobic substrate replicating the predesigned patterns of the PDMS stamp was formed due to the migration of uncured siloxane oligomers in the PDMS stamp to the intimately contacted substrate. By using this technique, MAPbI₃ film photodetector arrays with neglectable pixel-to-pixel variation, a responsivity of 2.83 A W^-1, specific detectivity of 5.4 × 10¹² Jones, and fast response speed of 52.7/57.1 μs (response/recovery time) were achieved. An 8 × 8 addressable photodetector array was further fabricated, which functioned well as a real-time image sensor with reasonable spatial resolution. It is believed that the proposed strategy will find potential application in large-scale fabrication of other photodetector arrays, which might be potentially important for future integrated optoelectronic devices.

Micro- and Nanostructured Lead Halide Perovskites: From Materials to Integrations and Devices

In the past decade, lead halide perovskites have been intensively explored due to their promising future in photovoltaics. Owing to their remarkable material properties such as solution processability, nice defect tolerance, broad bandgap tunability, high quantum yields, large refractive index, and strong nonlinear effects, this family of materials has also shown advantages in many other optoelectronic devices including microlasers, photodetectors, waveguides, and metasurfaces. Very recently, the stability of perovskite devices has been improved with the optimization of synthesis methods and device architectures. It is widely accepted that it is the time to integrate all the perovskite devices into a real system. However, for integrated photonic circuits, the shapes and distributions of chemically synthesized perovskites are quite random and not suitable for integration. Consequently, controlled synthesis and the top-down fabrication process are highly desirable to break the barriers. Herein, the developments of patterning and integration techniques for halide perovskites, as well as the structure/function relationships, are systematically reviewed. The recent progress in the study of optical responses originating from nanostructured perovskites is also presented. Lastly, the challenges and perspective for nanostructured-perovskite devices are discussed.

Excited-State Properties of Defected Halide Perovskite Quantum Dots: Insights from Computation

CsPbBr₃ quantum dots (QDs) have been recently suggested for their application as bright green light-emitting diodes (LEDs); however, their optical properties are yet to be fully understood and characterized. In this work, we utilize time-dependent density functional theory to analyze the ground and excited states of the CsPbBr₃ clusters in the presence of various low formation energy vacancy defects. Our study finds that the QD perovskites retain their defect tolerance with limited perturbance to the simulated UV-vis spectra. The exception to this general trend is that Br vacancies must be avoided, as they cause molecular orbital localization, resulting in trap states and lower LED performance. Blinking will likely still plague CsPbBr₃ QDs, given that the charged defects critically perturb the spectra via red-shifting and lower absorbance. Our study provides insight into the tunability of CsPbBr₃ QDs optical properties by understanding the nature of the electronic excitations and guiding improved development for high-performance LEDs.

MoS2/pentacene hybrid complementary inverter based photodetector with amplified voltage-output

A sensitive photodetection based on a novel hybrid CMOS inverter has been demonstrated. Unlike common photo-current type photodetectors, which convert optical signals to current, the CMOS inverter realizes voltage-output, overcoming the difficulty to monitor current signal in the range of nA. The hybrid CMOS logic inverter employs n-channel MoS₂ nanosheet/perovskite heterojunction FET and p-channel organic pentacene FET in a planar architecture. In order to obtain high performance, we adopt the interdigital electrodes for the pentacene FET to enhance the current density of the p-channel, and stack perovskite on the MoS₂ channel to modify the threshold voltage of the n-channel. As a result, a CMOS inverter with a voltage gain of more than ten is obtained. When V_IN is around the transition voltage (-38 V), the inverter can obtain stable optical detection signal, the V_OUT changes from 6 V in dark to 1 V under 633 nm light exposure. This finding indicates the potential to fabricate visible light detecting devices with voltage-output based on the inverter and may be further applicable for a photo-logic circuit.

Traps in metal halide perovskites: characterization and passivation

Metal halide perovskites (MHPs) have become a research focus in the field of optoelectronics due to their excellent optoelectronic properties and simple and cost-effective thin film manufacturing processes. In particular, the power conversion efficiency (PCE) of solar cells (SCs) and external quantum efficiency (EQE) of light-emitting diodes (LEDs) based on perovskite materials have reached 25.2% and 21.6%, respectively, in a short period, making perovskites especially promising for fabricating next-generation optoelectronic devices. Despite these inspiring results, obtaining high-performance, high-stability MHP-based devices still faces many challenges, among which the defects and the consequent traps in MHPs are key factors. Defect-induced traps can trap charge carriers or even act as non-radiative recombination centers, seriously degrading the device performance, causing hysteresis and deteriorating the stability of MHP-based devices. Thus, understanding the chemical/physical nature of traps and adopting appropriate strategies to passivate traps are important to enhance the device performance and stability. Herein we present a review in which the knowledge and understanding of traps in MHPs are considered and discussed. Moreover, the latest efforts on passivating traps in MHPs for improving device performance are summarized, with the hope of providing guidance to future development of high-performance and high-stability MHP-based devices.

Revealing Electrical-Poling-Induced Polarization Potential in Hybrid Perovskite Photodetectors

Despite recent rapid advances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the electrical-poling-induced ion migration, accounting for many unusual attributes and thus performance in perovskite-based devices, remain comparatively elusive. Herein, the electrical-poling-promoted polarization potential is reported for rendering hybrid organic-inorganic perovskite photodetectors with high photocurrent and fast response time, displaying a tenfold enhancement in the photocurrent and a twofold decrease in the response time after an external electric field poling. First, a robust meniscus-assisted solution-printing strategy is employed to facilitate the oriented perovskite crystals over a large area. Subsequently, the electrical poling invokes the ion migration within perovskite crystals, thus inducing a polarization potential, as substantiated by the surface potential change assessed by Kelvin probe force microscopy. Such electrical-poling-induced polarization potential is responsible for the markedly enhanced photocurrent and largely shortened response time. This work presents new insights into the electrical-poling-triggered ion migration and, in turn, polarization potential as well as into the implication of the latter for optoelectronic devices with greater performance. As such, the utilization of ion-migration-produced polarization potential may represent an important endeavor toward a wide range of high-performance perovskite-based photodetectors, solar cells, transistors, scintillators, etc.

High-Performance Deep Ultraviolet Photodetector Based on a One-Dimensional Lead-Free Halide Perovskite CsCu2I3 Film with High Stability

Lead halide perovskites have received much attention in the field of optoelectronic devices. However, the environment-unfriendly nature and intrinsic instability of these perovskites hamper their commercial applications. In this work, one novel one-dimensional lead-free halide perovskite with high stability, CsCu₂I₃, was prepared via an antisolvent-assisted crystallization method. The prepared CsCu₂I₃ bears a high exciton binding energy of ∼105 meV and a high photoluminescence quantum yield of 12.3%. We fabricated a deep ultraviolet photodetector based on a CsCu₂I₃ film that is nearly blind to 405 nm visible light but is sensitive to 265 and 365 nm illumination. The device exhibits excellent reproducibility and a high I_light/I_dark ratio of 22 under 265 nm illumination. Furthermore, the responsivity, specific detectivity, and external quantum efficiency are as high as 22.1 mA/W, 1.2 × 10¹¹ Jones, and 10.3% under a light density of 0.305 mW/cm², respectively. These findings demonstrate that CsCu₂I₃ perovskites should have great potential for future optoelectronics.

Two-Dimensional Cs2Pb(SCN)2Br2-Based Photomemory Devices Showing a Photoinduced Recovery Behavior and an Unusual Fully Optically Driven Memory Behavior

The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D Cs₂Pb(SCN)₂Br₂/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >10⁶ over 10⁴ s, an unusual fully optically driven memory behavior is intriguingly accomplished in the Cs₂Pb(SCN)₂Br₂/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 10³. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.

Temperature-Independent Polarization of Ultrathin Phthalocyanine-Based Hybrid Organic/Inorganic Heterojunctions

The combination of organic and inorganic materials at the nanoscale to form functional hybrid structures is a powerful strategy to develop novel electronic devices. The knowledge on semiconductor thin-film polarization brings direct benefits to the hybrid organic/inorganic electronics, becoming primordial for the development of devices such as electromechanical logic gates, solar cells, miniaturized valves, organic diodes, and molecular supercapacitors, among others. Here, we report on the dielectric polarization of ultrathin organic semiconducting films-ca. 5 nm thick metal phthalocyanine ensembles (viz., CuPc, CoPc, F16CuPc)-employed to build up hybrid metal/oxide/molecule heterojunctions. Such hybrid heterostructures are fully integrated into self-rolled nanomembrane-based capacitors and further investigated by impedance spectroscopy measurements as a function of temperature (from 6 to 300 K). The dielectric polarization of the metal phthalocyanines is found to be thermally activated above a specific threshold temperature, which depends on the molecular structure. Below this threshold, the current leakage across the system is suppressed, thus evidencing intrinsic-like polarization mechanisms. The temperature-independent permittivities of the ultrathin molecular films are found to be strongly dependent on the organic/inorganic hybrid interfaces, while the calculated relaxation times are more likely related to each single-molecule polarization. Beyond the advances in determining the temperature dependence of the permittivity for ultrathin phthalocyanine films integrated within solid-state electronics, our results also support the deterministic design of novel functional devices based on nanoscale hybrid organic/inorganic heterojunctions.

Stacking Effects on Electron-Phonon Coupling in Layered Hybrid Perovskites via Microstrain Manipulation

Organic-inorganic hybrid halide perovskites (ABX₃), especially layered 2D perovskites, have been recognized as promising semiconductors due to their tunable crystal structure and unique optoelectronic properties. A-site cations, as spacers, allow various metal halide assemblies, but the stacking pattern and the influence of their collective behavior on the properties of the resultant materials remain ambiguous. Here, the cation-stacking effects in the 2D perovskite single crystals, with a focus on the electron-phonon interaction, are investigated. We reveal the different photoluminescence from the surface region and the interior of the crystal, which is due to the residual strain induced by A-site cation stacking. We also examine the cation-stacking effects on the electron-phonon interaction, which is further employed to tailor the optoelectronic properties of the resultant 2D crystals. By reducing the microstrain, we reduce the electron-phonon coupling to improve the mobility and their stability against electric field in the corresponding crystals. Our study suggests a way to manipulate the optoelectronic properties in 2D perovskite materials by rational design of cation stacking.

Flexible Quasi-2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection

Organic-inorganic hybrid perovskites (PVKs) have recently emerged as attractive materials for photodetectors. However, the poor stability and low electrical conductivity still restrict their practical utilization. Owing to the quantum-well feature of two-dimensional (2D) Ruddlesden-Popper PVKs (2D PVKs), a promising quasi-2D PVK/indium gallium zinc oxide (IGZO) heterostructure phototransistor can be designed. By using a simple ligand-exchange spin-coating method, quasi-2D PVK fabricated on flexible substrates exhibits a desirable type-II energy band alignment, which facilitates effective spatial separation of photoexcited carriers. The device exhibits excellent photoresponsivity values of >10⁵ A W^-1 at 457 nm, and broadband photoresponse (457-1064 nm). By operating the device in the depletion regime, the specific detectivity is found to be 5.1 × 10¹⁶ Jones, which is the record high value among all PVK-based photodetectors reported to date. Due to the resistive hopping barrier in the quasi-2D PVK, the device can also work as an optoelectronic memory for near-infrared information storage. More importantly, the easy manufacturing process is highly beneficial, enabling large-scale and uniform quasi-2D PVK/IGZO hybrid films for detector arrays with outstanding ambient and operation stabilities. All these findings demonstrate the device architecture here provides a rational avenue to the design of next-generation flexible photodetectors with unprecedented sensitivity.

Materials chemistry and engineering in metal halide perovskite lasers

The invention and development of the laser have revolutionized science, technology, and industry. Metal halide perovskites are an emerging class of semiconductors holding promising potential in further advancing the laser technology. In this Review, we provide a comprehensive overview of metal halide perovskite lasers from the viewpoint of materials chemistry and engineering. After an introduction to the materials chemistry and physics of metal halide perovskites, we present diverse optical cavities for perovskite lasers. We then comprehensively discuss various perovskite lasers with particular functionalities, including tunable lasers, multicolor lasers, continuous-wave lasers, single-mode lasers, subwavelength lasers, random lasers, polariton lasers, and laser arrays. Following this a description of the strategies for improving the stability and reducing the toxicity of metal halide perovskite lasers is provided. Finally, future research directions and challenges toward practical technology applications of perovskite lasers are provided to give an outlook on this emerging field.