1
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Ren K, Yuan H, Pan Z, Li Z, Pan H, Chu H, Li D. Copper Functionalized SnSe Nanoflakes Enabling Nonlinear Optical Features for Ultrafast Photonics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401218. [PMID: 39046309 PMCID: PMC11481223 DOI: 10.1002/advs.202401218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 04/18/2024] [Indexed: 07/25/2024]
Abstract
This study enhances the ultrafast photonics application of tin selenide (SnSe) nanoflakes via copper (Cu) functionalization to overcome challenges such as low conductivity and weak near-infrared (NIR) absorption. Cu functionalization enhances concentration, induces strain, and reduces the bandgap through Sn substitution and Sn vacancy filling with Cu ions. Demonstrated by density functional theory calculations and experimental analyses, Cu-functionalized SnSe exhibits improved NIR optical absorption and superior third-order nonlinear optical properties. Z-scan measurements and femtosecond transient absorption spectroscopy reveal better performance of Cu-functionalized SnSe in terms of nonlinear optical properties and shorter carrier relaxation times compared to pristine SnSe. Furthermore, saturable absorbers based on both SnSe types, when integrated into an erbium-doped fiber laser, show that Cu functionalization leads to a decrease in pulse duration to 798 fs and an increase in 3 dB spectral bandwidth to 3.44 nm. Additionally, it enables stable harmonic mode-locking of bound-state solitons. This work suggests a new direction for improving wide bandgap 2D materials by highlighting the enhanced nonlinear optical properties and potential of Cu-functionalized SnSe in ultrafast photonics.
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Affiliation(s)
- Ke Ren
- School of Information Science and Engineering, and Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdao266237China
| | - Hualei Yuan
- Qingdao Institute of Bioenergy and Bioprocess TechnologyChinese Academy of SciencesQingdao266101China
| | - Zhongben Pan
- School of Information Science and Engineering, and Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdao266237China
| | - Zongsheng Li
- School of Information Science and Engineering, and Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdao266237China
| | - Han Pan
- School of Information Science and Engineering, and Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdao266237China
| | - Hongwei Chu
- School of Information Science and Engineering, and Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdao266237China
| | - Dechun Li
- School of Information Science and Engineering, and Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdao266237China
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2
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Su Z, Sun Y, Yu B, Yu H. In Situ PL Probes the Effect of 2D SnSe Nanosheets on the Crystallization Process of CsPbI 2Br Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43489-43497. [PMID: 39133563 DOI: 10.1021/acsami.4c06893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Reducing defects in the active layer is important for improving the crystalline quality of all-inorganic perovskite solar cells (PSCs). Exploring novel additives is one of the most promising approaches to minimize active layer defects. In this work, two-dimensional (2D) SnSe nanosheets with excellent optoelectronic properties are prepared using an ultrasonic exfoliation method. The prepared 2D SnSe nanosheets are introduced into a CsPbI2Br precursor, which reduces the defect formation at grain boundaries and enhances the crystallinity of CsPbI2Br perovskites. We use the in situ photoluminescence (PL) technique to investigate the role of 2D materials in the crystallization process. The results show that SnSe nanosheets primarily shorten the grain boundary merging time and reduce the defect generation during the grain boundary merging stage, thereby regulating the crystallization of perovskite. In addition, SnSe nanosheets passivate uncoordinated Pb atoms at grain boundaries by Se atoms, further reducing the defect density in perovskite. As a result, PSCs exhibit a higher power conversion efficiency (PCE) of 14.24% and a Voc of 1.22 V. This study highlights the role of 2D materials in enhancing the crystalline quality and PCE of PSCs.
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Affiliation(s)
- Zhan Su
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Yapeng Sun
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Bo Yu
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Huangzhong Yu
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
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3
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Ge R, Liu B, Sui F, Zheng Y, Yu Y, Wang K, Qi R, Huang R, Yue F, Chu J, Duan CG. In Situ Formation of SnSe 2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404965. [PMID: 39155421 DOI: 10.1002/smll.202404965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2024] [Revised: 08/01/2024] [Indexed: 08/20/2024]
Abstract
2D van der Waals (vdW) layered semiconductor vertical heterostructures with controllable band alignment are highly desired for nanodevice applications including photodetection and photovoltaics. However, current 2D vdW heterostructures are mainly obtained via mechanical exfoliation and stacking process, intrinsically limiting the yield and reproducibility, hardly achieving large-area with specific orientation. Here, large-area vdW-epitaxial SnSe2/SnSe heterostructures are obtained by annealing layered SnSe. These in situ Raman analyses reveal the optimized annealing conditions for the phase transition of SnSe to SnSe2. The spherical aberration-corrected transmission electron microscopy investigations demonstrate that layered SnSe2 epitaxially forms on SnSe surface with atomically sharp interface and specific orientation. Optical characterizations and theoretical calculations reveal valley polarization of the heterostructures that originate from SnSe, suggesting a naturally adjustable band alignment between type-II and type-III, only relying on the polarization angle of incident lights. This work not only offers a unique and accessible approach to obtaining large-area SnSe2/SnSe heterostructures with new insight into the formation mechanism of vdW heterostructures, but also opens the intriguing optical applications based on valleytronic nanoheterostructures.
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Affiliation(s)
- Rui Ge
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Beituo Liu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yufan Zheng
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yilun Yu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Kaiqi Wang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing, 401120, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
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4
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Liu M, Zhang X, Zhang S, Pei Y. Ag 2Se as a tougher alternative to n-type Bi 2Te 3 thermoelectrics. Nat Commun 2024; 15:6580. [PMID: 39097572 PMCID: PMC11297924 DOI: 10.1038/s41467-024-50898-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Accepted: 07/24/2024] [Indexed: 08/05/2024] Open
Abstract
For half a century, only Bi2Te3-based thermoelectrics have been commercialized for near room temperature applications including both power generation and refrigeration. Because of the strong layered structure, Bi2Te3 in particular for n-type conduction has to be texturized to utilize its high in-plane thermoelectric performance, leaving a substantial challenge in toughness. This work presents the fabrication and performance evaluation of thermoelectric modules based on n-type Ag2Se paring with commercial p-Bi2Te3. Ag2Se mechanically allows an order of magnitude larger fracture strain and thermoelectrically secures the module efficiency quite competitive to that of commercial one for both refrigeration and power generation within ± 50 K of room temperature, enabling a demonstration of a significantly tougher alternative to n-type Bi2Te3 for practical applications.
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Affiliation(s)
- Min Liu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai, 201804, China
| | - Xinyue Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai, 201804, China
| | - Shuxian Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai, 201804, China
| | - Yanzhong Pei
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai, 201804, China.
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Kong X, Zong X, Lei Z, Wang Z, Zhao Y, Zhao X, Zhang J, Liu Z, Ren Y, Wu L, Zhang M, He F, Yang P. A Universal In-Situ Interfacial Growth Strategy for Various MXene-Based van der Waals Heterostructures with Uniform Heterointerfaces: The Efficient Conversion from 3D Composite to 2D Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2405174. [PMID: 39072996 DOI: 10.1002/smll.202405174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Revised: 07/16/2024] [Indexed: 07/30/2024]
Abstract
Two-dimensional (2D) van der Waals heterostructures endow individual 2D material with the novel functional structures, intriguing compositions, and fantastic interfaces, which efficiently provide a feasible route to overcome the intrinsic limitations of single 2D components and embrace the distinct features of different materials. However, the construction of 2D heterostructures with uniform heterointerfaces still poses significant challenges. Herein, a universal in-situ interfacial growth strategy is designed to controllably prepare a series of MXene-based tin selenides/sulfides with 2D van der Waals homogeneous heterostructures. Molten salt etching by-products that are usually recognized as undesirable impurities, are reasonably utilized by us to efficiently transform into different 2D nanostructures via in-situ interfacial growth. The obtained MXene-based 2D heterostructures present sandwiched structures and lamellar interlacing networks with uniform heterointerfaces, which demonstrate the efficient conversion from 3D composite to 2D heterostructures. Such 2D heterostructures significantly enhance charge transfer efficiency, chemical reversibility, and overall structural stability in the electrochemical process. Taking 2D-SnSe2/MXene anode as a representative, it delivers outstanding lithium storage performance with large reversible capacities and ultrahigh capacity retention of over 97% after numerous cycles at 0.2, 1.0, and 10.0 A g-1 current density, which suggests its tremendous application potential in lithium-ion batteries.
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Affiliation(s)
- Xianglong Kong
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Xiaohang Zong
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Zijin Lei
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Zicong Wang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Ying Zhao
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Xudong Zhao
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Junming Zhang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Zhiliang Liu
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Yueming Ren
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Linzhi Wu
- College of Aerospace and Civil Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Milin Zhang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Fei He
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Piaoping Yang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
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6
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Chen J, Huang J, Zheng T, Yang M, Chen S, Ma J, Jian L, Pan Y, Zheng Z, Huo N, Gao W, Li J. 2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38231-38242. [PMID: 39001805 DOI: 10.1021/acsami.4c06028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
The attractive physical properties of two-dimensional (2D) semiconductors in group IVA-VIA have been fully revealed in recent years. Combining them with 2D ambipolar materials to construct van der Waals heterojunctions (vdWHs) can offer tremendous opportunities for designing multifunctional electronic and optoelectronic devices, such as logic switching circuits, half-wave rectifiers, and broad-spectrum photodetectors. Here, an optimized SnSe0.75S0.25 is grown to design a SnSe0.75S0.25/MoTe2 vdWH for logic operation and wide-spectrum photodetection. Benefiting from the excellent gate modulation under the appropriate sulfur substitution and type-II band alignment, the device exhibits reconfigurable antiambipolar and ambipolar transfer behaviors at positive and negative source-drain voltage (Vds), enabling stable XNOR logic operation. It also features a gate-modulated positive and negative rectifying behavior with rectification ratios of 265:1 and 1:196, confirming its potential as half-wave logic rectifiers. Besides, the device can respond from visible to infrared wavelength up to 1400 nm. Under 635 nm illumination, the maximum responsivity of 1.16 A/W and response time of 657/500 μs are achieved at the Vds of -2 V. Furthermore, due to the strong in-plane anisotropic structure of SnSe0.75S0.25-alloyed nanosheet and narrow bandgap of 2H-MoTe2, it shows a broadband polarization-sensitive function with impressive photocurrent anisotropic ratios of 15.6 (635 nm), 7.0 (808 nm), and 3.7 (1310 nm). The direction along the maximum photocurrent can be reconfigurable depending on the wavelengths. These results indicate that our designed alloyed SnSe0.75S0.25/MoTe2 vdWH has reconfigurable logic operation and broadband photodetection capabilities in 2D multifunctional integrated circuits.
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Affiliation(s)
- Jianru Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Shengdi Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingyi Ma
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Liang Jian
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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7
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Yu M, Iddawela SA, Wang J, Hilse M, Thompson JL, Reifsnyder Hickey D, Sinnott SB, Law S. Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates. ACS NANO 2024; 18:17185-17196. [PMID: 38870462 DOI: 10.1021/acsnano.4c04194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single-crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates by using molecular beam epitaxy. It yields smooth thin GaSe films with a rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density-functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/three-dimensional (3D) quasi-van der Waals epitaxial growth.
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Affiliation(s)
- Mingyu Yu
- Department of Materials Science and Engineering, University of Delaware, 201 Dupont Hall, 127 The Green, Newark, Delaware 19716, United States
| | - Sahani Amaya Iddawela
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jiayang Wang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Maria Hilse
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jessica L Thompson
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Danielle Reifsnyder Hickey
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Susan B Sinnott
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Institute for Computational and Data Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Penn State Institute of Energy and the Environment, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Stephanie Law
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Penn State Institute of Energy and the Environment, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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8
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Mars K, Sałęga-Starzecki M, Zawadzka KM, Godlewska E. Influence of Sputtering Power on the Properties of Magnetron Sputtered Tin Selenide Films. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3132. [PMID: 38998215 PMCID: PMC11242425 DOI: 10.3390/ma17133132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Revised: 06/14/2024] [Accepted: 06/20/2024] [Indexed: 07/14/2024]
Abstract
The ecofriendly tin selenide (SnSe) is expected to find multiple applications in optoelectronic, photovoltaic, and thermoelectric systems. This work is focused on the thermoelectric properties of thin films. SnSe single crystals exhibit excellent thermoelectric properties, but it is not so in the case of polycrystalline bulk materials. The investigations were motivated by the fact that nanostructuring may lead to an improvement in thermoelectric efficiency, which is evaluated through a dimensionless figure of merit, ZT = S2 σ T/λ, where S is the Seebeck coefficient (V/K), σ is the electrical conductivity (S/m), λ is the thermal conductivity (W/mK), and T is the absolute temperature (K). The main objective of this work was to obtain SnSe films via magnetron sputtering of a single target. Instead of common radiofrequency (RF) magnetron sputtering with a high voltage alternating current (AC) power source, a modified direct current (DC) power supply was employed. This technique in the classical version is not suitable for sputtering targets with relatively low thermal and electrical conductivity, such as SnSe. The proposed solution enabled stable sputtering of this target without detrimental cracking and arcing and resulted in high-quality polycrystalline SnSe films with unprecedented high values of ZT equal to 0.5 at a relatively low temperature of 530 K. All parameters included in ZT were measured in one setup, i.e., Linseis Thin Film Analyzer (TFA). The SnSe films were deposited at sputtering powers of 120, 140, and 170 W. They had the same orthorhombic structure, as determined by X-ray diffraction (XRD), but the thickness and microstructure examined by scanning electron microscopy (SEM) were dependent on the sputtering power. It was demonstrated that thermoelectric efficiency improved with increasing sputtering power and stable values were attained after two heating-cooling cycles. This research additionally provides further insights into the DC sputtering process and opens up new possibilities for magnetron sputtering technology.
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Affiliation(s)
- Krzysztof Mars
- Faculty of Materials Science and Ceramics, AGH University of Krakow, al. A. Mickiewicza 30, 30-059 Krakow, Poland; (M.S.-S.); (E.G.)
| | - Mateusz Sałęga-Starzecki
- Faculty of Materials Science and Ceramics, AGH University of Krakow, al. A. Mickiewicza 30, 30-059 Krakow, Poland; (M.S.-S.); (E.G.)
| | - Kinga M. Zawadzka
- Faculty of Metals Engineering and Industrial Computer Science, AGH University of Krakow, al. A. Mickiewicza 30, 30-059 Krakow, Poland;
| | - Elżbieta Godlewska
- Faculty of Materials Science and Ceramics, AGH University of Krakow, al. A. Mickiewicza 30, 30-059 Krakow, Poland; (M.S.-S.); (E.G.)
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9
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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10
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Hu B, Liu Y, Zhang B, Guo F, Zhang M, Yu W, Li S, Hao L. A high-sensitivity SnSe/Si heterojunction position-sensitive detector for ultra-low power detection. NANOSCALE 2024; 16:4170-4175. [PMID: 38334754 DOI: 10.1039/d3nr05906e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect are crucial components in non-contact distance measurement, process control, guidance systems, and other related applications. However, PSDs are challenging due to the narrow spectral range and low sensitivity, limiting further practical application. Here, we present an ultra-sensitive SnSe/Si PSD device. A large-area uniform SnSe nanorod (NR) array film was grown on Si using a glancing-angle magnetron sputtering deposition technique and a SnSe/Si heterojunction PSD device was fabricated. PSDs exhibit an excellent photoresponse in a wide spectral range of 405-980 nm, showing an ultrahigh position sensitivity of 1517.4 mV mm-1 and an excellent spectral sensitivity of 4 × 104 V W-1. More importantly, the detection limit power of the device is as low as 10 nW, indicating the outstanding potential for weak light detection. Based on the unique structural features and interface effect, the mechanisms for the remarkable performance of the fabricated SnSe/Si PSD device are clarified. This work indicates the large potential of SnSe/Si heterojunctions as a promising material for ultrasensitive optical position-sensitive devices.
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Affiliation(s)
- Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
| | - Fuhai Guo
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
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11
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Zhu Y, Qu Z, Zhang J, Wang X, Jiang S, Xu Z, Yang F, Wu Z, Dai Y. First-principles prediction of ferroelectric Janus Si 2XY (X/Y = S/Se/Te, X ≠ Y) monolayers with negative Poisson's ratios. Phys Chem Chem Phys 2024; 26:4555-4563. [PMID: 38247301 DOI: 10.1039/d3cp05107b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
Nowadays, two-dimensional (2D) materials with Janus structures evoke much attention due to their unique mechanical and electronic properties. In this work, Janus Pma2-Si2XY (X/Y = S/Se/Te, X ≠ Y) ferroelectric monolayers are firstly proposed and systematically investigated by first-principles calculations. These monolayers exhibit remarkable mechanical properties, including small Young's modulus values, negative Poisson's ratios (NPRs) and large critical strains, reflecting their exceptional flexibility and stretchability. More strikingly, the novel structures of Si2STe and Si2SeTe also endow them with in-plane spontaneous polarization (Ps) and low energy barrier for phase transition, with Ps and energy barrier values being 1.632 × 10-10 C m-1 and 159 meV for Si2STe and 1.149 × 10-10 C m-1 and 196.6 meV for Si2SeTe. The ab initio molecular dynamics (AIMD) simulations reveal high Curie temperatures (Tc) for Si2STe and Si2SeTe, ranging between 1300 K and 1400 K. Additionally, Si2XY monolayers exhibit high anisotropic carrier mobility (∼103 cm2 V-1 s-1) and an extraordinary light absorption coefficient (∼105 cm-1). Our research not only broadens the family of 2D Janus ferroelectric materials, but also demonstrates their potential applications in nanomechanical, nanoelectronic and optoelectronic devices.
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Affiliation(s)
- Yunlai Zhu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Zihan Qu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Jishun Zhang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Xiaoteng Wang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Shuo Jiang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Zuyu Xu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Fei Yang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Zuheng Wu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Yuehua Dai
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
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12
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Cheng Z, Zhang J, Lin L, Zhan Z, Ma Y, Li J, Yu S, Cui H. Pressure-Induced Modulation of Tin Selenide Properties: A Review. Molecules 2023; 28:7971. [PMID: 38138462 PMCID: PMC10745316 DOI: 10.3390/molecules28247971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Revised: 11/22/2023] [Accepted: 11/30/2023] [Indexed: 12/24/2023] Open
Abstract
Tin selenide (SnSe) holds great potential for abundant future applications, due to its exceptional properties and distinctive layered structure, which can be modified using a variety of techniques. One of the many tuning techniques is pressure manipulating using the diamond anvil cell (DAC), which is a very efficient in situ and reversible approach for modulating the structure and physical properties of SnSe. We briefly summarize the advantages and challenges of experimental study using DAC in this review, then introduce the recent progress and achievements of the pressure-induced structure and performance of SnSe, especially including the influence of pressure on its crystal structure and optical, electronic, and thermoelectric properties. The overall goal of the review is to better understand the mechanics underlying pressure-induced phase transitions and to offer suggestions for properly designing a structural pattern to achieve or enhanced novel properties.
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Affiliation(s)
- Ziwei Cheng
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Jian Zhang
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Lin Lin
- School of Agricultural Engineering and Food Science, Shandong University of Technology, Zibo 255000, China;
- Key Laboratory of Wooden Materials Science and Engineering of Jilin Province, Beihua University, Jilin 132013, China
| | - Zhiwen Zhan
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Yibo Ma
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Jia Li
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Shenglong Yu
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Hang Cui
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
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13
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Li L, Tian B, Zhang Z, Shi M, Liu J, Liu Z, Lei J, Li S, Lin Q, Zhao L, Jiang Z. Highly sensitive flexible heat flux sensor based on a microhole array for ultralow to high temperatures. MICROSYSTEMS & NANOENGINEERING 2023; 9:133. [PMID: 37886351 PMCID: PMC10598026 DOI: 10.1038/s41378-023-00599-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Revised: 08/05/2023] [Accepted: 08/23/2023] [Indexed: 10/28/2023]
Abstract
With the growing demand for thermal management of electronic devices, cooling of high-precision instruments, and biological cryopreservation, heat flux measurement of complex surfaces and at ultralow temperatures has become highly imperative. However, current heat flux sensors (HFSs) are commonly used in high-temperature scenarios and have problems when applied in low-temperature conditions, such as low sensitivity and embrittlement. In this study, we developed a flexible and highly sensitive HFS that can operate at ultralow to high temperatures, ranging from -196 °C to 273 °C. The sensitivities of HFSs with thicknesses of 0.2 mm and 0.3 mm, which are efficiently manufactured by the screen-printing method, reach 11.21 μV/(W/m2) and 13.43 μV/(W/m2), respectively. The experimental results show that there is a less than 3% resistance change from bending to stretching. Additionally, the HFS can measure heat flux in both exothermic and absorptive cases and can measure heat flux up to 25 kW/m2. Additionally, we demonstrate the application of the HFS to the measurement of minuscule heat flux, such as heat dissipation of human skin and cold water. This technology is expected to be used in heat flux measurements at ultralow temperatures or on complex surfaces, which has great importance in the superconductor and cryobiology field.
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Affiliation(s)
- Le Li
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Bian Tian
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
- State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi’an Jiaotong University, Xi’an, 710049 China
- Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai, 265503 China
| | - Zhongkai Zhang
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Meng Shi
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Jiangjiang Liu
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Zhaojun Liu
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Jiaming Lei
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Shuimin Li
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Qijing Lin
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Libo Zhao
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
| | - Zhuangde Jiang
- School of Mechanical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China
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14
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Bozin ES, Xie H, Abeykoon AMM, Everett SM, Tucker MG, Kanatzidis MG, Billinge SJL. Local Sn Dipolar-Character Displacements behind the Low Thermal Conductivity in SnSe Thermoelectric. PHYSICAL REVIEW LETTERS 2023; 131:036101. [PMID: 37540855 DOI: 10.1103/physrevlett.131.036101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Revised: 05/10/2023] [Accepted: 06/20/2023] [Indexed: 08/06/2023]
Abstract
The local atomic structure of SnSe was characterized across its orthorhombic-to-orthorhombic structural phase transition using x-ray pair distribution function analysis. Substantial Sn displacements with a dipolar character persist in the high-symmetry high-temperature phase, albeit with a symmetry different from that of the ordered displacements below the transition. The analysis implies that the transition is neither order-disorder nor displacive but rather a complex crossover. Robust ferrocoupled SnSe intralayer distortions suggest a ferroelectriclike instability as the driving force. These local symmetry-lowering Sn displacements are likely integral to the ultralow lattice thermal conductivity mechanism in SnSe.
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Affiliation(s)
- E S Bozin
- Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - H Xie
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - A M M Abeykoon
- Photon Sciences Division, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - S M Everett
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - M G Tucker
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - M G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - S J L Billinge
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
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15
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Al Bouzieh N, Sattar MA, Benkraouda M, Amrane N. A Comparative Study of Electronic, Optical, and Thermoelectric Properties of Zn-Doped Bulk and Monolayer SnSe Using Ab Initio Calculations. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2084. [PMID: 37513095 PMCID: PMC10383460 DOI: 10.3390/nano13142084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 06/11/2023] [Accepted: 06/25/2023] [Indexed: 07/30/2023]
Abstract
In this study, we explore the effects of Zn doping on the electronic, optical, and thermoelectric properties of α-SnSe in bulk and monolayer forms, employing density functional theory calculations. By varying the doping concentrations, we aim to understand the characteristics of Zn-doped SnSe in both systems. Our analysis of the electronic band structure using (PBE), (SCAN), and (HSE06) functionals reveals that all doped systems exhibit semiconductor-like behavior, making them suitable for applications in optoelectronics and photovoltaics. Notably, the conduction bands in SnSe monolayers undergo changes depending on the Zn concentration. Furthermore, the optical analysis indicates a decrease in the dielectric constant when transitioning from bulk to monolayer forms, which is advantageous for capacitor production. Moreover, heavily doped SnSe monolayers hold promise for deep ultraviolet applications. Examining the thermoelectric transport properties, we observe that Zn doping enhances the electrical conductivity in bulk SnSe at temperatures below 500 K. However, the electronic thermal conductivity of monolayer samples is lower compared to bulk samples, and it decreases consistently with increasing Zn concentrations. Additionally, the Zn-doped 2D samples exhibit high Seebeck coefficients across most of the temperature ranges investigated.
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Affiliation(s)
- Najwa Al Bouzieh
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Muhammad Atif Sattar
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
- National Water and Energy Center (NWEC), United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Maamar Benkraouda
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Noureddine Amrane
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
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16
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Chin JR, Frye MB, Liu DSH, Hilse M, Graham IC, Shallenberger J, Wang K, Engel-Herbert R, Wang M, Shin YK, Nayir N, van Duin ACT, Garten LM. Self-limiting stoichiometry in SnSe thin films. NANOSCALE 2023; 15:9973-9984. [PMID: 37272496 DOI: 10.1039/d3nr00645j] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Unique functionalities can arise when 2D materials are scaled down near the monolayer limit. However, in 2D materials with strong van der Waals bonds between layers, such as SnSe, maintaining stoichiometry while limiting vertical growth is difficult. Here, we describe how self-limiting stoichiometry can promote the growth of SnSe thin films deposited by molecular beam epitaxy. The Pnma phase of SnSe was stabilized over a broad range of Sn : Se flux ratios from 1 : 1 to 1 : 5. Changing the flux ratio does not affect the film stoichiometry, but influences the predominant crystallographic orientation. ReaxFF molecular dynamics (MD) simulation demonstrates that, while a mixture of Sn/Se stoichiometries forms initially, SnSe stabilizes as the cluster size evolves. The MD results further show that the excess selenium coalesces into Se clusters that weakly interact with the surface of the SnSe particles, leading to the limited stoichiometric change. Raman spectroscopy corroborates this model showing the initial formation of SnSe2 transitioning into SnSe as experimental film growth progresses. Transmission electron microscopy measurements taken on films deposited with growth rates above 0.25 Å s-1 show a thin layer of SnSe2 that disrupts the crystallographic orientation of the SnSe films. Therefore, using the conditions for self-limiting SnSe growth while avoiding the formation of SnSe2 was found to increase the lateral scale of the SnSe layers. Overall, self-limiting stoichiometry provides a promising avenue for maintaining growth of large lateral-scale SnSe for device fabrication.
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Affiliation(s)
- Jonathan R Chin
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
| | - Marshall B Frye
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
| | - Derrick Shao-Heng Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Maria Hilse
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Ian C Graham
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
| | - Jeffrey Shallenberger
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Roman Engel-Herbert
- Paul-Drude Institut für Festkörperelektronik Berlin, Leibniz-Institut im Forschungsverbund Berlin eV., Berlin 10117, Germany
| | - Mengyi Wang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Yun Kyung Shin
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Nadire Nayir
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
- Physics Department, Karamanoglu Mehmetbey University, Karaman, 70000, Turkey
| | - Adri C T van Duin
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Lauren M Garten
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
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17
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Burton MR, Howells G, Mehraban S, McGettrick JD, Lavery N, Carnie MJ. Fully 3D Printed Tin Selenide (SnSe) Thermoelectric Generators with Alternating n-Type and p-Type Legs. ACS APPLIED ENERGY MATERIALS 2023; 6:5498-5507. [PMID: 37234971 PMCID: PMC10206617 DOI: 10.1021/acsaem.3c00576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 04/17/2023] [Indexed: 05/28/2023]
Abstract
Tin selenide (SnSe) has attracted much attention in the field of thermoelectrics since the discovery of the record figure of merit (zT) of 2.6 ± 0.3. While there have been many publications on p-type SnSe, to manufacture efficient SnSe thermoelectric generators, ann-type is also required. Publications on n-type SnSe, however, are limited. This paper reports a pseudo-3D-printing technique to fabricate bulk n-type SnSe elements, by utilizing Bi as a dopant. Various Bi doping levels are investigated and characterized over a wide range of temperatures and through multiple thermal cycles. Stable n-type SnSe elements are then combined with printed p-type SnSe elements to fabricate a fully printed alternating n- and p-type thermoelectric generator, which is shown to produce 145 μW at 774 K.
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Affiliation(s)
- Matthew Richard Burton
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
| | - Geraint Howells
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
| | - Shahin Mehraban
- MACH
1, Faculty of Science and Engineering, Swansea
University, Bay Campus, Swansea SA1 8EN, United
Kingdom
| | - James D. McGettrick
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
| | - Nicholas Lavery
- MACH
1, Faculty of Science and Engineering, Swansea
University, Bay Campus, Swansea SA1 8EN, United
Kingdom
| | - Matthew J. Carnie
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
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18
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Zakay N, Schlesinger A, Argaman U, Nguyen L, Maman N, Koren B, Ozeri M, Makov G, Golan Y, Azulay D. Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15668-15675. [PMID: 36920349 PMCID: PMC10064319 DOI: 10.1021/acsami.2c22134] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Accepted: 03/03/2023] [Indexed: 06/18/2023]
Abstract
We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.
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Affiliation(s)
- Noy Zakay
- Department
of Materials Engineering, Ben-Gurion University
of the Negev, Beer-Sheva 8410501, Israel
- Ilse
Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel
| | | | - Uri Argaman
- Department
of Materials Engineering, Ben-Gurion University
of the Negev, Beer-Sheva 8410501, Israel
| | - Long Nguyen
- Department
of Materials Engineering, Ben-Gurion University
of the Negev, Beer-Sheva 8410501, Israel
| | - Nitzan Maman
- Ilse
Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel
| | - Bar Koren
- Department
of Materials Engineering, Ben-Gurion University
of the Negev, Beer-Sheva 8410501, Israel
- Ilse
Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel
| | - Meital Ozeri
- Racah
Institute of Physics, The Hebrew University, Jerusalem 9190401, Israel
| | - Guy Makov
- Department
of Materials Engineering, Ben-Gurion University
of the Negev, Beer-Sheva 8410501, Israel
- Ilse
Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel
| | - Yuval Golan
- Department
of Materials Engineering, Ben-Gurion University
of the Negev, Beer-Sheva 8410501, Israel
- Ilse
Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel
| | - Doron Azulay
- Azrieli
College of Engineering, Jerusalem 9103501, Israel
- Racah
Institute of Physics, The Hebrew University, Jerusalem 9190401, Israel
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19
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Li L, Fang S, Yu R, Chen R, Wang H, Gao X, Zha W, Yu X, Jiang L, Zhu D, Xiong Y, Liao YH, Zheng D, Yang WX, Miao J. Fast near-infrared photodetectors from p-type SnSe nanoribbons. NANOTECHNOLOGY 2023; 34:245202. [PMID: 36881863 DOI: 10.1088/1361-6528/acc1eb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 03/07/2023] [Indexed: 06/18/2023]
Abstract
Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light-matter interaction, and high carrier mobility. However, it is still challenging to grow high-quality SnSe NRs for high-performance photodetectors so far. In this work, we successfully synthesized high-quality p-type SnSe NRs by chemical vapor deposition and then fabricated near-infrared photodetectors. The SnSe NR photodetectors show a high responsivity of 376.71 A W-1, external quantum efficiency of 5.65 × 104%, and detectivity of 8.66 × 1011Jones. In addition, the devices show a fast response time with rise and fall time of up to 43μs and 57μs, respectively. Furthermore, the spatially resolved scanning photocurrent mapping shows very strong photocurrent at the metal-semiconductor contact regions, as well as fast generation-recombination photocurrent signals. This work demonstrated that p-type SnSe NRs are promising material candidates for broad-spectrum and fast-response optoelectronic devices.
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Affiliation(s)
- Long Li
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Suhui Fang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Ranran Yu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Ruoling Chen
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- Nantong Academy of Intelligent Sensing, No. 60 Chongzhou Road, Nantong 226009, People's Republic of China
| | - Xiaofeng Gao
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Wenjing Zha
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Xiangxiang Yu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Long Jiang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Desheng Zhu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Yan Xiong
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Yan-Hua Liao
- School of Mathematics and Physics, Hubei Polytechnic University, Huangshi 435003, People's Republic of China
| | - Dingshan Zheng
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Wen-Xing Yang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- Nantong Academy of Intelligent Sensing, No. 60 Chongzhou Road, Nantong 226009, People's Republic of China
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20
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Jo HK, Kim J, Lim YR, Shin S, Song DS, Bae G, Kwon YM, Jang M, Yim S, Myung S, Lee SS, Kim CG, Kim KK, Lim J, Song W. Wafer-Scale Production of Two-Dimensional Tin Monoselenide: Expandable Synthetic Platform for van der Waals Semiconductor-Based Broadband Photodetectors. ACS NANO 2023; 17:1372-1380. [PMID: 36625593 DOI: 10.1021/acsnano.2c09854] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A synthetic platform for industrially applicable two-dimensional (2D) semiconductors that addresses the paramount issues associated with large-scale production, wide-range photosensitive materials, and oxidative stability has not yet been developed. In this study, we attained the 6 in. scale production of 2D SnSe semiconductors with spatial homogeneity using a rational synthetic platform based on the thermal decomposition of solution-processed single-source precursors. The long-range structural and chemical homogeneities of the 2D SnSe layers are manifested using comprehensive spectroscopic analyses. Furthermore, the capability of the SnSe-based photodetectors for broadband photodetection is distinctly verified. The photoresponsivity and detectivity of the SnSe-based photodetectors are 5.89 A W-1 and 1.8 × 1011 Jones at 532 nm, 1.2 A W-1 and 3.7 × 1010 Jones at 1064 nm, and 0.14 A W-1 and 4.3 × 109 Jones at 1550 nm, respectively. The minimum rise times for the 532 and 1064 nm lasers are 62 and 374 μs, respectively. The photoelectrical analysis of the 5 × 5 SnSe-based photodetector array reveals 100% active devices with 95.06% photocurrent uniformity. We unequivocally validated that the air and thermal stabilities of the photocurrent yielded from the SnSe-based photodetector are determined to be >30 d in air and 160 °C, respectively, which are suitable for optoelectronic applications.
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Affiliation(s)
- Hyeong-Ku Jo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jahee Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Yi Rang Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sunyoung Shin
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Da Som Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Garam Bae
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Yeong Min Kwon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
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21
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Gong Y, Li Y, Li Y, Liu M, Bai Y, Wu C. Metal Selenides Anode Materials for Sodium Ion Batteries: Synthesis, Modification, and Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206194. [PMID: 36437114 DOI: 10.1002/smll.202206194] [Citation(s) in RCA: 19] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2022] [Revised: 11/06/2022] [Indexed: 06/16/2023]
Abstract
The powerful and rapid development of lithium-ion batteries (LIBs) in secondary batteries field makes lithium resources in short supply, leading to rising battery costs. Under the circumstances, sodium-ion batteries (SIBs) with low cost, inexhaustible sodium reserves, and analogous work principle to LIBs, have evolved as one of the most anticipated candidates for large-scale energy storage devices. Thereinto, the applicable electrode is a core element for the smooth development of SIBs. Among various anode materials, metal selenides (MSex ) with relatively high theoretical capacity and unique structures have aroused extensive interest. Regrettably, MSex suffers from large volume expansion and unwished side reactions, which result in poor electrochemistry performance. Thus, strategies such as carbon modification, structural design, voltage control as well as electrolyte and binder optimization are adopted to alleviate these issues. In this review, the synthesis methods and main reaction mechanisms of MSex are systematically summarized. Meanwhile, the major challenges of MSex and the corresponding available strategies are proposed. Furthermore, the recent research progress on layered and nonlayered MSex for application in SIBs is presented and discussed in detail. Finally, the future development focuses of MSex in the field of rechargeable ion batteries are highlighted.
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Affiliation(s)
- Yuteng Gong
- Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yu Li
- Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Ying Li
- Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Mingquan Liu
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, P. R. China
| | - Ying Bai
- Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Chuan Wu
- Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, P. R. China
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22
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Optoelectronic, mechanical, and thermoelectric properties of Na/I co-doped SnSe via ab initio calculations. J SOLID STATE CHEM 2023. [DOI: 10.1016/j.jssc.2023.123858] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
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23
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Guo Z, Gu H, Yu Y, Wei Z, Liu S. Broadband and Incident-Angle-Modulation Near-Infrared Polarizers Based on Optically Anisotropic SnSe. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:134. [PMID: 36616044 PMCID: PMC9824315 DOI: 10.3390/nano13010134] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Revised: 12/24/2022] [Accepted: 12/25/2022] [Indexed: 06/17/2023]
Abstract
Optical anisotropy offers an extra degree of freedom to dynamically and reversibly regulate polarizing optical components, such as polarizers, without extra energy consumption and with high modulating efficiency. In this paper, we theoretically and numerically design broadband and incident-angle-modulation near-infrared polarizers, based on the SnSe, whose optical anisotropy is quantitatively evaluated by the complete dielectric tensor, complex refractive index tensor, and derived birefringence (~|Δn|max = 0.4) and dichroism (~|Δk|max = 0.4). The bandwidth of a broadband polarizer is 324 nm, from 1262 nm to 1586 nm, with an average extinction ratio above 23 dB. For the incident-angle-modulation near-infrared polarizer, the high incident angles dynamically and reversibly modulate its working wavelength with a maximum extinction ratio of 71 dB. Numerical simulations and theoretical calculations reveal that the considerable absorption for p light and continuously and relatively low absorption of s light lead to the broadband polarizer, while the incident-angle-modulation one mainly arises from the blue shift of corresponding wavelength of p light's minimum reflectance. The proposed novel design of polarizers based on SnSe are likely to be mass-produced and integrated into an on-chip system, which opens up a new thought to design polarizing optical components by utilizing other low-symmetry materials.
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Affiliation(s)
- Zhengfeng Guo
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
- Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Honggang Gu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
- Optics Valley Laboratory, Wuhan 430074, China
| | - Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
- Optics Valley Laboratory, Wuhan 430074, China
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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24
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Eagambaram M, Kumar K. Design of an Efficient Tin Selenide-Based Ternary Nanocomposite Electrode for Simultaneous Determination of Paracetamol, Tryptophan, and Caffeine. ACS OMEGA 2022; 7:35486-35495. [PMID: 36249364 PMCID: PMC9557887 DOI: 10.1021/acsomega.1c07306] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Electrochemical sensors play an essential role in the medical arena through assessing the drug quality and diagnosing diseases. The design of sensors relies on the electroactive properties of the material meticulously chosen to modify the electrode. Here in this work, a facile ternary SnSe/TiO2@GO electroactive nanocomposite was prepared using tin selenide (SnSe) in combination with titanium dioxide (TiO2) embedded on graphene oxide (GO). The ternary nanocomposite was characterized by X-ray diffraction, Raman, FT-IR, and X-ray photoelectron spectroscopy, energy dispersive analysis, and scanning electron microscopy. The ternary nanocomposite was then drop-coated on the GC electrode to form the SnSe/TiO2@GO-GC electrode. Its electrochemical activity was demonstrated for simultaneous determination of paracetamol, tryptophan, and caffeine. The synergetic interaction of the components and their innate virtue showed enriched electrocatalytic activity such as a decrease in overpotential, enhancement in electron transfer, greater sensing ability and selectivity, wide linear range, and low detection limit toward the chosen analytes. Broad linear ranges of concentrations, 0.0089-410, 0.0136-87.66, and 0.0160-355 μM, with detection limits of 0.0030, 0.0053, and 0.0065 μM for paracetamol, tryptophan, and caffeine, respectively, were noticed. The electrode also displayed high selectivity, stability, repeatability, and reproducibility. Importantly, the study was successful for detection and quantification of the above components in real samples of blood serum, pharmaceutical formulations, and beverages.
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Affiliation(s)
- Murugan Eagambaram
- Department
of Physical Chemistry, School of Chemical Sciences, University of Madras, Guindy Campus, Chennai, Tamil Nadu 600025, India
| | - Kalpana Kumar
- Department
of Chemistry, Dhaanish Ahmed College of
Engineering, Padappai, Chennai, Tamil Nadu 601301, India
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25
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Nandihalli N, Gregory DH, Mori T. Energy-Saving Pathways for Thermoelectric Nanomaterial Synthesis: Hydrothermal/Solvothermal, Microwave-Assisted, Solution-Based, and Powder Processing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106052. [PMID: 35843868 PMCID: PMC9443476 DOI: 10.1002/advs.202106052] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Revised: 05/06/2022] [Indexed: 05/16/2023]
Abstract
The pillars of Green Chemistry necessitate the development of new chemical methodologies and processes that can benefit chemical synthesis in terms of energy efficiency, conservation of resources, product selectivity, operational simplicity and, crucially, health, safety, and environmental impact. Implementation of green principles whenever possible can spur the growth of benign scientific technologies by considering environmental, economical, and societal sustainability in parallel. These principles seem especially important in the context of the manufacture of materials for sustainable energy and environmental applications. In this review, the production of energy conversion materials is taken as an exemplar, by examining the recent growth in the energy-efficient synthesis of thermoelectric nanomaterials for use in devices for thermal energy harvesting. Specifically, "soft chemistry" techniques such as solution-based, solvothermal, microwave-assisted, and mechanochemical (ball-milling) methods as viable and sustainable alternatives to processes performed at high temperature and/or pressure are focused. How some of these new approaches are also considered to thermoelectric materials fabrication can influence the properties and performance of the nanomaterials so-produced and the prospects of developing such techniques further.
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Affiliation(s)
- Nagaraj Nandihalli
- National Institute for Materials Science (NIMS)International Center for Materials Nanoarchitectonics (WPI‐MANA)Namiki 1‐1Tsukuba305‐0044Japan
| | | | - Takao Mori
- National Institute for Materials Science (NIMS)International Center for Materials Nanoarchitectonics (WPI‐MANA)Namiki 1‐1Tsukuba305‐0044Japan
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26
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Zhang S, Malik S, Ali N, Khan A, Bilal M, Rasool K. Covalent and Non-covalent Functionalized Nanomaterials for Environmental Restoration. Top Curr Chem (Cham) 2022; 380:44. [PMID: 35951126 PMCID: PMC9372017 DOI: 10.1007/s41061-022-00397-3] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2022] [Accepted: 06/07/2022] [Indexed: 12/07/2022]
Abstract
Nanotechnology has emerged as an extraordinary and rapidly developing discipline of science. It has remolded the fate of the whole world by providing diverse horizons in different fields. Nanomaterials are appealing because of their incredibly small size and large surface area. Apart from the naturally occurring nanomaterials, synthetic nanomaterials are being prepared on large scales with different sizes and properties. Such nanomaterials are being utilized as an innovative and green approach in multiple fields. To expand the applications and enhance the properties of the nanomaterials, their functionalization and engineering are being performed on a massive scale. The functionalization helps to add to the existing useful properties of the nanomaterials, hence broadening the scope of their utilization. A large class of covalent and non-covalent functionalized nanomaterials (FNMs) including carbons, metal oxides, quantum dots, and composites of these materials with other organic or inorganic materials are being synthesized and used for environmental remediation applications including wastewater treatment. This review summarizes recent advances in the synthesis, reporting techniques, and applications of FNMs in adsorptive and photocatalytic removal of pollutants from wastewater. Future prospects are also examined, along with suggestions for attaining massive benefits in the areas of FNMs.
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Affiliation(s)
- Shizhong Zhang
- Key Laboratory for Palygorskite Science and Applied Technology of Jiangsu Province, National and Local Joint Engineering Research Center for Mineral Salt Deep Utilization, Huaiyin Institute of Technology, Huai'an, 223003, China.
| | - Sumeet Malik
- Key Laboratory for Palygorskite Science and Applied Technology of Jiangsu Province, National and Local Joint Engineering Research Center for Mineral Salt Deep Utilization, Huaiyin Institute of Technology, Huai'an, 223003, China
- Institute of Chemical Sciences, University of Peshawar, Khyber Pakhtunkhwa, 25120, Pakistan
| | - Nisar Ali
- Key Laboratory for Palygorskite Science and Applied Technology of Jiangsu Province, National and Local Joint Engineering Research Center for Mineral Salt Deep Utilization, Huaiyin Institute of Technology, Huai'an, 223003, China.
| | - Adnan Khan
- Institute of Chemical Sciences, University of Peshawar, Khyber Pakhtunkhwa, 25120, Pakistan
| | - Muhammad Bilal
- School of Life Science and Food Engineering, Huaiyin Institute of Technology, Huai'an, 223003, China
| | - Kashif Rasool
- Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Qatar Foundation, P.O. Box 5824, Doha, Qatar.
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27
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Morozova NV, Korobeynikov IV, Miyajima N, Ovsyannikov SV. Giant Room-Temperature Power Factor in p-Type Thermoelectric SnSe under High Pressure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103720. [PMID: 35187810 PMCID: PMC9284162 DOI: 10.1002/advs.202103720] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2021] [Revised: 01/18/2022] [Indexed: 05/29/2023]
Abstract
Materials that can efficiently convert heat into electricity are widely utilized in energy conversion technologies. The existing thermoelectrics demonstrate rather limited performance characteristics at room temperature, and hence, alternative materials and approaches are very much in demand. Here, it is experimentally shown that manipulating an applied stress can greatly improve a thermoelectric power factor of layered p-type SnSe single crystals up to ≈180 µW K-2 cm-1 at room temperature. This giant enhancement is explained by a synergetic effect of three factors, such as: band-gap narrowing, Lifshitz transition, and strong sample deformation. Under applied pressure above 1 GPa, the SnSe crystals become more ductile, which can be related to changes in the prevailing chemical bonding type inside the layers, from covalent toward metavalent. Thus, the SnSe single crystals transform into a highly unconventional crystalline state in which their layered crystal stacking is largely preserved, while the layers themselves are strongly deformed. This results in a dramatic narrowing in a band gap, from Eg = 0.83 to 0.50 eV (at ambient conditions). Thus, the work demonstrates a novel strategy of improving the performance parameters of chalcogenide thermoelectrics via tuning their chemical bonding type, stimulating a sample deformation and a band-structure reconstruction.
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Affiliation(s)
- Natalia V. Morozova
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences18 S. Kovalevskaya Str.Yekaterinburg620137Russia
| | - Igor V. Korobeynikov
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences18 S. Kovalevskaya Str.Yekaterinburg620137Russia
| | - Nobuyoshi Miyajima
- Bayerisches GeoinstitutUniversität BayreuthUniversitätsstrasse 30BayreuthD‐95447Germany
| | - Sergey V. Ovsyannikov
- Bayerisches GeoinstitutUniversität BayreuthUniversitätsstrasse 30BayreuthD‐95447Germany
- Institute for Solid State Chemistry of Ural Branch of Russian Academy of Sciences91 Pervomayskaya Str.Yekaterinburg620219Russia
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28
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Mortelmans W, Hilse M, Song Q, Jo SS, Ye K, Liu D, Samarth N, Jaramillo R. Measuring and Then Eliminating Twin Domains in SnSe Thin Films Using Fast Optical Metrology and Molecular Beam Epitaxy. ACS NANO 2022; 16:9472-9478. [PMID: 35709492 DOI: 10.1021/acsnano.2c02459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals (vdW) layered chalcogenides have strongly direction-dependent (i.e., anisotropic) properties that make them interesting for photonic and optoelectronic applications. Orthorhombic tin selenide (α-SnSe) is a triaxial vdW material with strong optical anisotropy within layer planes, which has motivated studies of optical phase and domain switching. As with every vdW material, controlling the orientation of crystal domains during growth is key to reliably making wafer-scale, high-quality thin films, free from twin boundaries. Here, we demonstrate a fast optical method to quantify domain orientation in SnSe thin films made by molecular beam epitaxy (MBE). The in-plane optical anisotropy results in white-light being reflected into distinct colors for certain optical polarization angles and the color depends on domain orientation. We use our method to confirm a high density of twin boundaries in SnSe epitaxial films on MgO substrates, with square symmetry that results in degeneracy between SnSe 90° domain orientations. We then demonstrate that growing on a-plane sapphire, with rectangular lattice-matched symmetry that breaks the SnSe domain degeneracy, results in single-crystalline films with one preferred orientation. Our SnSe bottom-up film synthesis by MBE enables future applications of this vdW material that is particularly difficult to process by top-down methods. Our optical metrology is fast and can apply to all triaxial vdW materials.
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Affiliation(s)
- Wouter Mortelmans
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Maria Hilse
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Qian Song
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Seong Soon Jo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kevin Ye
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Derrick Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nitin Samarth
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rafael Jaramillo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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29
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Fabrication of Vacuum Evaporated (Cu1-xAgx)2ZnSnSe4 Thin-film Photovoltaic Devices and its Photoconversion Efficiency. ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING 2022. [DOI: 10.1007/s13369-022-06982-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
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30
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Liu Y, Liu Y, Wu Y, Zhao S, Guo F, Li S, Yu W, Liu G, Hao J, Wang Z, Yan K, Hao L. Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24557-24564. [PMID: 35584303 DOI: 10.1021/acsami.2c02557] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Photothermal detectors have attracted tremendous research interest in uncooled infrared imaging technology but with a relatively slow response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated as a photothermal detector to realize high-performance infrared response beyond the bandgap limitation. Vertically standing SnSe-NR arrays are deposited on Si by a sputtering method. Through manipulating the photoinduced thermoelectric (PTE) behavior along the c-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage photoresponse with a high photoresponsivity of 106.3 V W-1 and high optical detectivity of 1.9 × 1010 cm Hz1/2 W-1 under 1342 nm illumination. Importantly, an ultrafast infrared photothermal response is achieved with the rise/fall time of 11.3/258.7 μs. Moreover, the coupling effect between the PTE behavior and external thermal excitation enables an improved response by 288.4%. The work not only offers a new strategy to develop high-speed photothermal detectors but also performs a deep understanding of the PTE behavior in a heterojunction system.
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Affiliation(s)
- Yingming Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Yunjie Liu
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, P. R. China
| | - Yupeng Wu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Shirong Zhao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Fuhai Guo
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Guanchu Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Jingyi Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, P. R. China
| | - Keyou Yan
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510006, P. R. China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
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31
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Bie J, Zhou J, Fa W. Quasi‐1D Antiferroelectricity in Centrosymmetric CsTaS
3
Crystal. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200022] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Jie Bie
- National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Department of Physics Nanjing University Nanjing 210093 China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures Department of Materials Science and Engineering and Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 China
| | - Wei Fa
- National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Department of Physics Nanjing University Nanjing 210093 China
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32
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Gharibshahi M, Jamali-Sheini F, Yousefi R. Nanoarchitectonics of SnSe with the impacts of ultrasonic powers and ultraviolet radiations on physical and optoelectronic properties. ADV POWDER TECHNOL 2022. [DOI: 10.1016/j.apt.2022.103517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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33
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Chen Z, Moss DJ. Fabrication Technologies for the On-Chip Integration of 2D Materials. SMALL METHODS 2022; 6:e2101435. [PMID: 34994111 DOI: 10.1002/smtd.202101435] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/12/2021] [Indexed: 06/14/2023]
Abstract
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Zhigang Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China
- Department of Physics and Astronomy, San Francisco State University, San Francisco, CA, 94132, USA
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
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34
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Zhang L, Li X, Chen K, Zhang Z, Li Y, Lu Y, Chen X, Yang D, Shan C. Revealing the Anisotropic Structural and Electrical Stabilities of 2D SnSe under Harsh Environments: Alkaline Environment and Mechanical Strain. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9824-9832. [PMID: 35143168 DOI: 10.1021/acsami.1c22963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
As a promising thermoelectric and semiconducting material, the stability of two-dimensional tin selenide (SnSe) under harsh environments is significant for its practical applications. Here, focusing on the key procedures in the device fabrication process, we report the anisotropic structural and electrical stabilities of SnSe under an alkaline environment and mechanical strain. Due to the anisotropic mechanical properties, the SnSe flakes can naturally form long-straight {011} edge planes during the mechanical exfoliation process. Such a cleavage tendency provides an effective crystal orientation identification method to uncover the orientation-dependent properties. We find that the single-crystalline SnSe flakes experience an anisotropic degradation process with the preferable {011} dissolution planes in the alkaline environment and can be gradually transformed to be polycrystalline consisting of SnSe2, Sn, and Se nanocrystals. SnSe flakes present an anisotropic electromechanical response with a gauge factor value that reaches ∼-460 under the uniaxial strain along the ⟨011⟩ directions. Our revealed structural and electrical stability of SnSe under harsh environments can provide guidance for the device design, fabrication, and performance evaluation.
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Affiliation(s)
- Leilei Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xing Li
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Kaijian Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Zhenfeng Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yizhe Li
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yacong Lu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xuexia Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Dongwen Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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35
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Liu Y, Calcabrini M, Yu Y, Lee S, Chang C, David J, Ghosh T, Spadaro MC, Xie C, Cojocaru-Mirédin O, Arbiol J, Ibáñez M. Defect Engineering in Solution-Processed Polycrystalline SnSe Leads to High Thermoelectric Performance. ACS NANO 2022; 16:78-88. [PMID: 34549956 PMCID: PMC8793148 DOI: 10.1021/acsnano.1c06720] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
SnSe has emerged as one of the most promising materials for thermoelectric energy conversion due to its extraordinary performance in its single-crystal form and its low-cost constituent elements. However, to achieve an economic impact, the polycrystalline counterpart needs to replicate the performance of the single crystal. Herein, we optimize the thermoelectric performance of polycrystalline SnSe produced by consolidating solution-processed and surface-engineered SnSe particles. In particular, the SnSe particles are coated with CdSe molecular complexes that crystallize during the sintering process, forming CdSe nanoparticles. The presence of CdSe nanoparticles inhibits SnSe grain growth during the consolidation step due to Zener pinning, yielding a material with a high density of grain boundaries. Moreover, the resulting SnSe-CdSe nanocomposites present a large number of defects at different length scales, which significantly reduce the thermal conductivity. The produced SnSe-CdSe nanocomposites exhibit thermoelectric figures of merit up to 2.2 at 786 K, which is among the highest reported for solution-processed SnSe.
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Affiliation(s)
- Yu Liu
- IST
Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | | | - Yuan Yu
- RWTH
Aachen, I. Physikalisches Institut (IA), Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Seungho Lee
- IST
Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - Cheng Chang
- IST
Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - Jérémy David
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
| | - Tanmoy Ghosh
- IST
Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - Maria Chiara Spadaro
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
| | - Chenyang Xie
- Department
of Physics, INTE & Barcelona Multiscale Res. Center, Universitat Politècnica de Catalunya, Avda. Eduard Maristany 16, 08930 Barcelona, Catalunya, Spain
| | - Oana Cojocaru-Mirédin
- RWTH
Aachen, I. Physikalisches Institut (IA), Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Jordi Arbiol
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
- ICREA, Pg. Lluis Companys 23, 08010 Barcelona, Catalonia, Spain
| | - Maria Ibáñez
- IST
Austria, Am Campus 1, 3400 Klosterneuburg, Austria
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36
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Han Y, Yu J, Zhang H, Xu F, Peng K, Zhou X, Qiao L, Misochko OV, Nakamura KG, Vanacore GM, Hu J. Photoinduced Ultrafast Symmetry Switch in SnSe. J Phys Chem Lett 2022; 13:442-448. [PMID: 34990128 DOI: 10.1021/acs.jpclett.1c03704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Layered tin selenide (SnSe) has recently emerged as a high-performance thermoelectric material with the current record for the figure of merit (ZT) observed in the high-temperature Cmcm phase. So far, access to the Cmcm phase has been mainly obtained via thermal equilibrium methods based on sample heating or application of external pressure, thus restricting the current understanding only to ground-state conditions. Here, we investigate the ultrafast carrier and phononic dynamics in SnSe. Our results demonstrate that optical excitations can transiently switch the point-group symmetry of the crystal from Pnma to Cmcm at room temperature in a few hundreds of femtoseconds with an ultralow threshold for the excitation carrier density. This nonequilibrium Cmcm phase is found to be driven by the displacive excitation of coherent Ag phonons and, given the absence of low-energy thermal phonons, exists in SnSe with the status of 'cold lattice with hot carriers'. Our findings provide an important insight for understanding the nonequilibrium thermoelectric properties of SnSe.
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Affiliation(s)
- Yadong Han
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
- Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China
| | - Junhong Yu
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
- Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China
| | - Hang Zhang
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
- Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China
| | - Fang Xu
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
| | - Kunlin Peng
- College of Physics and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing, 401331, China
| | - Xiaoyuan Zhou
- College of Physics and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing, 401331, China
| | - Liang Qiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Oleg V Misochko
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
- Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Region 142432, Russia
| | - Kazutaka G Nakamura
- Materials and Structures Laboratory, Tokyo Institute of Technology, R3-10, 4259 Nagatsuta, Yokohama, 226-8503, Japan
| | - Giovanni M Vanacore
- Department of Materials Science, University of Milano-Bicocca, Via Cozzi 55, Milano, 20121, Italy
| | - Jianbo Hu
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
- Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China
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37
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Gong X, Wang Y, Hong Q, Liu J, Yang C, Zou H, Zhou Y, Huang D, Wu H, Zhou Z, Zhang B, Zhou X. In-situ micro-Raman study of SnSe single crystals under atmosphere: Effect of laser power and temperature. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2022; 265:120375. [PMID: 34536888 DOI: 10.1016/j.saa.2021.120375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2021] [Revised: 08/27/2021] [Accepted: 09/04/2021] [Indexed: 06/13/2023]
Abstract
Single crystal of tin selenide (SnSe) was studied by micro-Raman spectroscopy under atmosphere conditions. The effect of varying the incident laser power on the sample up to 2 mW was analyzed. The Raman spectra showed that the number of all vibrational modes have not decreased or increased, but all peaks red-shifted and softened obviously as the laser power increased to the threshold value. The temperature-dependent micro-Raman study of the single crystal was carried out for illustrating thermal effect due to the high incident laser power. A new SnSe2 phase appeared at high temperature without vacuum and become the dominant phase at the surface of the crystal gradually because of oxidation. Detecting few amounts of SnSe2 crystals on the surface of single crystal shows the high sensitivity of Raman spectroscopy. High resolution transmission electron microscopy (HRTEM) was also used to confirm that the newly generated SnSe2 phase is precipitated by SnSe under high temperature oxidation conditions. To study the Raman spectra of low thermal conductivity materials under high temperature and non-vacuum conditions, lower incident laser power should be used to avoid the influence of additional thermal effects.
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Affiliation(s)
- Xiangnan Gong
- Analytical and Testing Center, Chongqing University, Chongqing 401331, China.
| | - Yingru Wang
- College of Chemistry and Chemical Engineering, Chongqing University 401331, China
| | - Qiongmei Hong
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Jie Liu
- Analytical and Testing Center, Chongqing University, Chongqing 401331, China
| | - Chuanyao Yang
- Analytical and Testing Center, Chongqing University, Chongqing 401331, China
| | - Hanjun Zou
- Analytical and Testing Center, Chongqing University, Chongqing 401331, China
| | - Yang Zhou
- Analytical and Testing Center, Chongqing University, Chongqing 401331, China
| | - Dejun Huang
- Malvern Panalytical (China), Shanghai 200233, China
| | - Hong Wu
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Zizhen Zhou
- College of Physics, Chongqing University, Chongqing 401331, China
| | - Bin Zhang
- Analytical and Testing Center, Chongqing University, Chongqing 401331, China.
| | - Xiaoyuan Zhou
- Analytical and Testing Center, Chongqing University, Chongqing 401331, China; College of Physics, Chongqing University, Chongqing 401331, China.
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38
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Zi Y, Zhu J, Hu L, Wang M, Huang W. Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100098] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022] Open
Affiliation(s)
- You Zi
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Jun Zhu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Lanping Hu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
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39
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Li J, Li H, Niu X, Wang Z. Low-Dimensional In 2Se 3 Compounds: From Material Preparations to Device Applications. ACS NANO 2021; 15:18683-18707. [PMID: 34870407 DOI: 10.1021/acsnano.1c03836] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.
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Affiliation(s)
- Junye Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Handong Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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40
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Jeon JW, Yoo C, Kim W, Choi W, Park B, Lee YK, Hwang CS. Atomic layer deposition of SnSe x thin films using Sn(N(CH 3) 2) 4 and Se(Si(CH 3) 3) 2 with NH 3 co-injection. Dalton Trans 2021; 51:594-601. [PMID: 34904602 DOI: 10.1039/d1dt03487a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This study introduces the atomic layer deposition (ALD) of tin selenide thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection. The co-injection of NH3 with Se(Si(CH3)3)2 is essential for film growth to convert the precursor into a more reactive form. The most critical feature of this specific ALD process is that the chemical composition (Sn/Se ratio) could be varied by changing the growth temperature, even for the given precursor injection conditions. The composition and morphology of the deposited films varied depending on the process temperature. Below 150 °C, a uniform SnSe2 thin film was deposited in an amorphous phase, maintaining the oxidation states of its precursors. Above 170 °C, the composition of the film changed to 1 : 1 stoichiometry due to the crystallization of SnSe and desorption of Se. A two-step growth sequence involving a low-temperature seed layer was devised for the high-temperature ALD of SnSe to improve surface roughness.
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Affiliation(s)
- Jeong Woo Jeon
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Chanyoung Yoo
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Woohyun Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Wonho Choi
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Byongwoo Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Yoon Kyeung Lee
- Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
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41
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Zheng YJ, Zhang Q, Odunmbaku O, Ou Z, Li M, Sun K. Tuning the carrier type and density of monolayer tin selenide via organic molecular doping. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:085001. [PMID: 34736236 DOI: 10.1088/1361-648x/ac3691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2021] [Accepted: 11/04/2021] [Indexed: 06/13/2023]
Abstract
Utilizing first-principles calculations, charge transfer doping process of single layer tin selenide (SL-SnSe) via the surface adsorption of various organic molecules was investigated. Effective p-type SnSe, with carrier concentration exceeding 3.59 × 1013 cm-2, was obtained upon adsorption of tetracyanoquinodimethane or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane on SL-SnSe due to their lowest unoccupied molecular orbitals acting as shallow acceptor states. While we could not obtain effective n-type SnSe through adsorption of tetrathiafulvalene (TTF) or 1,4,5,8-tetrathianaphthalene on pristine SnSe due to their highest occupied molecular orbitals (HOMO) being far from the conduction band edge of SnSe, this disadvantageous situation can be amended by the introduction of an external electric field perpendicular to the monolayer surface. It is found that Snvacwill facilitate charge transfer from TTF to SnSe through introducing an unoccupied gap state just above the HOMO of TTF, thereby partially compensating for the p-type doping effect of Snvac. Our results show that both effective p-type and n-type SnSe can be obtained and tuned by charge transfer doping, which is necessary to promote its applications in nanoelectronics, thermoelectrics and optoelectronics.
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Affiliation(s)
- Yu Jie Zheng
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Qi Zhang
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Omololu Odunmbaku
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Zeping Ou
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Meng Li
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Kuan Sun
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
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42
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Md Aspan R, Fatima N, Mohamed R, Syafiq U, Ibrahim MA. An Overview of the Strategies for Tin Selenide Advancement in Thermoelectric Application. MICROMACHINES 2021; 12:1463. [PMID: 34945312 PMCID: PMC8709453 DOI: 10.3390/mi12121463] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Revised: 11/19/2021] [Accepted: 11/20/2021] [Indexed: 11/17/2022]
Abstract
Chalcogenide, tin selenide-based thermoelectric (TE) materials are Earth-abundant, non-toxic, and are proven to be highly stable intrinsically with ultralow thermal conductivity. This work presented an updated review regarding the extraordinary performance of tin selenide in TE applications, focusing on the crystal structures and their commonly used fabrication methods. Besides, various optimization strategies were recorded to improve the performance of tin selenide as a mid-temperature TE material. The analyses and reviews over the methodologies showed a noticeable improvement in the electrical conductivity and Seebeck coefficient, with a noticeable decrement in the thermal conductivity, thereby enhancing the tin selenide figure of merit value. The applications of SnSe in the TE fields such as microgenerators, and flexible and wearable devices are also discussed. In the future, research in low-dimensional TE materials focusing on nanostructures and nanocomposites can be conducted with the advancements in material science technology as well as microtechnology and nanotechnology.
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Affiliation(s)
- Rosnita Md Aspan
- Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia; (R.M.A.); (N.F.); (U.S.)
| | - Noshin Fatima
- Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia; (R.M.A.); (N.F.); (U.S.)
| | - Ramizi Mohamed
- Department of Electrical, Electronics and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia;
| | - Ubaidah Syafiq
- Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia; (R.M.A.); (N.F.); (U.S.)
| | - Mohd Adib Ibrahim
- Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia; (R.M.A.); (N.F.); (U.S.)
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43
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Kaur A, Goswami T, Rondiya SR, Jadhav YA, Babu KJ, Shukla A, Yadav DK, Ghosh HN. Enhanced Charge Carrier Separation and Improved Biexciton Yield at the p-n Junction of SnSe/CdSe Heterostructures: A Detailed Electrochemical and Ultrafast Spectroscopic Investigation. J Phys Chem Lett 2021; 12:10958-10968. [PMID: 34738822 DOI: 10.1021/acs.jpclett.1c02946] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Tin chalcogenides (SnX, X = S, Se)-based heterostructures (HSs) are promising materials for the construction of low-cost optoelectronic devices. Here, we report the synthesis of a SnSe/CdSe HS using the controlled cation exchange reaction. The (400) plane of SnSe and the (111) plane of CdSe confirm the formation of an interface between SnSe and CdSe. The Type I band alignment is estimated for the SnSe/CdSe HS with a small conduction band offset (CBO) of 0.72 eV through cyclic voltammetry measurements. Transient absorption (TA) studies demonstrate a drastic enhancement of the CdSe biexciton signal that points toward the hot carrier transfer from SnSe to CdSe in a short time scale. The fast growth and recovery of CdSe bleach in the presence of SnSe indicate charge transfer back to SnSe. The observed delocalization of carriers in these two systems is crucial for an optoelectronic device. Our findings provide new insights into the fabrication of cost-effective photovoltaic devices based on SnSe-based heterostructures.
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Affiliation(s)
- Arshdeep Kaur
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab140306, India
| | - Tanmay Goswami
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab140306, India
| | - Sachin R Rondiya
- School of Energy Studies, Savitribai Phule Pune University, Pune411007, India
| | - Yogesh A Jadhav
- School of Energy Studies, Savitribai Phule Pune University, Pune411007, India
| | - K Justice Babu
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab140306, India
| | - Ayushi Shukla
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab140306, India
| | - Dharmendra Kumar Yadav
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab140306, India
| | - Hirendra N Ghosh
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab140306, India
- Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai400085, India
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44
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Sattar MA, Al Bouzieh N, Benkraouda M, Amrane N. First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2021; 12:1101-1114. [PMID: 34703721 PMCID: PMC8505901 DOI: 10.3762/bjnano.12.82] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/21/2021] [Accepted: 09/28/2021] [Indexed: 06/13/2023]
Abstract
Tin selenide (SnSe) has thermoelectric (TE) and photovoltaic (PV) applications due to its exceptional advantages, such as the remarkable figure of merit (ZT ≈ 2.6 at 923 K) and excellent optoelectronic properties. In addition, SnSe is nontoxic, inexpensive, and relatively abundant. These aspects make SnSe of great practical importance for the next generation of thermoelectric devices. Here, we report structural, optoelectronic, thermodynamic, and thermoelectric properties of the recently experimentally identified binary phase of tin monoselenide (π-SnSe) by using the density functional theory (DFT). Our DFT calculations reveal that π-SnSe features an optical bandgap of 1.41 eV and has an exceptionally large lattice constant (12.2 Å, P213). We report several thermodynamic, optical, and thermoelectric properties of this π-SnSe phase for the first time. Our finding shows that the π-SnSe alloy is exceptionally promising for the next generation of photovoltaic and thermoelectric devices at room and high temperatures.
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Affiliation(s)
- Muhammad Atif Sattar
- Physics Department, College of Science, United Arab Emirates University (UAEU), 15551, Al Ain, UAE
- National Water and Energy Center (NWEC), United Arab Emirates University (UAEU), 15551, Al Ain, UAE
| | - Najwa Al Bouzieh
- Physics Department, College of Science, United Arab Emirates University (UAEU), 15551, Al Ain, UAE
| | - Maamar Benkraouda
- Physics Department, College of Science, United Arab Emirates University (UAEU), 15551, Al Ain, UAE
| | - Noureddine Amrane
- Physics Department, College of Science, United Arab Emirates University (UAEU), 15551, Al Ain, UAE
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45
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Tyagi A, Karmakar G, Mandal BP, Dutta Pathak D, Wadawale A, Kedarnath G, Srivastava AP, Jain VK. Di- tert-butyltin(IV) 2-pyridyl and 4,6-dimethyl-2-pyrimidyl thiolates: versatile single source precursors for the preparation of SnS nanoplatelets as anode material for lithium ion batteries. Dalton Trans 2021; 50:13073-13085. [PMID: 34581340 DOI: 10.1039/d1dt01142a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
New air and moisture stable di-tert-butyltin complexes derived from 2-mercaptopyridine (HSpy), [tBu2Sn(Spy)2], [tBu2Sn(Cl)(Spy)] and 4,6-dimethyl-2-mercaptopyrimidine (HSpymMe2) [tBu2Sn(Cl)(SpymMe2)], have been prepared and utilized as single-source molecular precursors for the preparation of orthorhombic SnS nanoplatelets by a hot injection method and thin films by aerosol assisted chemical vapour deposition (AACVD). The complexes were characterized by NMR (1H, 13C, 119Sn) and elemental analysis and their structures were unambiguously established by the single crystal X-ray diffraction technique. Thermolysis of these complexes in oleylamine (OAm) produced SnS nanoplatelets. The morphologies, elemental compositions, phase purity and crystal structures of the resulting Oam-capped nanoplatelets were determined by electron microscopy (SEM, TEM), energy dispersive X-ray spectroscopy (EDS) and pXRD, while the band gaps of the nanoplatelets were evaluated by diffuse reflectance spectroscopy (DRS) and were blue shifted relative to the bulk material. The morphology and preferential growth of the nanoplatelets were found to be significantly altered by the nature of the molecular precursor employed. The synthesized SnS nanoplatelets were evaluated for their performance as anode material for lithium ion batteries (LIBs). A cell comprised of an SnS electrode could be cycled for 50 cycles. The rate capability of SnS was investigated at different current densities in the range 0.1 to 0.7 A g-1 which revealed that the initial capacity could be regained.
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Affiliation(s)
- Adish Tyagi
- Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India. .,Homi Bhabha National Institute, Anushaktinagar, Mumbai-400 094, India
| | - Gourab Karmakar
- Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India. .,Homi Bhabha National Institute, Anushaktinagar, Mumbai-400 094, India
| | - B P Mandal
- Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India. .,Homi Bhabha National Institute, Anushaktinagar, Mumbai-400 094, India
| | - Dipa Dutta Pathak
- Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India.
| | - Amey Wadawale
- Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India.
| | - G Kedarnath
- Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India. .,Homi Bhabha National Institute, Anushaktinagar, Mumbai-400 094, India
| | - A P Srivastava
- Materials Science Division, Bhabha Atomic Research Centre, Mumbai-400 085, India
| | - Vimal K Jain
- Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India. .,UM-DAE Centre for Excellence in Basic Sciences, University of Mumbai, Kalina Campus, Mumbai-400 098, India
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46
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Li F, Chen H, Xu L, Zhang F, Yin P, Yang T, Shen T, Qi J, Zhang Y, Li D, Ge Y, Zhang H. Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:33226-33236. [PMID: 34236163 DOI: 10.1021/acsami.1c05254] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ultrathin lamellar SnSe is highly attractive for applications in areas such as photonics, photodetectors, photovoltaic devices, and photocatalysis, owing to its suitable band gap, exceptional light absorption capabilities, and considerable carrier mobility. On the other hand, SnSe nanosheets (NSs) still face challenges of being difficult to prepare and their devices having low photoelectric conversion efficiencies. Herein, ultrathin SnSe NSs with controlled Se defects were synthesized with high yield by a facial Li intercalation-assisted liquid exfoliation method. The loss of Se, a narrowing of the band gap, and an increase in lattice disorders involving vacancies, distortions, and phase transition were observed in SnSe NSs prepared with a long lithiation process. Comparing between the 24 and 72 h lithiation samples, the ones processed for a longer time displayed a faster recombination time due to more defect-induced mid-states. Inspiringly, enhancements of 4-10 times were observed for photodetector device parameters such as photocurrent, photoresponsivity, photoresponse speed, and specific detectivity of the 72 h lithiation SnSe NSs. Additionally, these devices show good stability and a broad detection range, from ultraviolet to the near infrared region. Our results provide a promising avenue for the mass production of SnSe NSs with high photoelectric performance and open up opportunities for applications in photonics, optoelectronics, and photocatalysis.
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Affiliation(s)
- Feng Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Hualong Chen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lei Xu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Feng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Peng Yin
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tingqiang Yang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tao Shen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Delong Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yanqi Ge
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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47
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Prokeš L, Gorylová M, Čermák Šraitrová K, Nazabal V, Havel J, Němec P. Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition. ACS OMEGA 2021; 6:17483-17491. [PMID: 34278134 PMCID: PMC8280661 DOI: 10.1021/acsomega.1c01892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Accepted: 06/17/2021] [Indexed: 05/08/2023]
Abstract
Pulsed UV laser deposition was exploited for the preparation of thin Sn50-x As x Se50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50-x As x Se50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn m Se n + clusters with low m and n values were observed.
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Affiliation(s)
- Lubomír Prokeš
- Department
of Chemistry, Faculty of Science, Masaryk
University, Kamenice 5/A14, 62500 Brno, Czech Republic
| | - Magdaléna Gorylová
- Department
of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
| | - Kateřina Čermák Šraitrová
- Institute
of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
| | - Virginie Nazabal
- Department
of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
- Univ
Rennes, CNRS, ISCR UMR6226, ScanMAT UMS
2001, F-35000 Rennes, France
| | - Josef Havel
- Department
of Chemistry, Faculty of Science, Masaryk
University, Kamenice 5/A14, 62500 Brno, Czech Republic
| | - Petr Němec
- Department
of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
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48
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Ren S, Wang M, Wang X, Han G, Zhang Y, Zhao H, Vomiero A. Near-infrared heavy-metal-free SnSe/ZnSe quantum dots for efficient photoelectrochemical hydrogen generation. NANOSCALE 2021; 13:3519-3527. [PMID: 33566048 DOI: 10.1039/d0nr09154e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Solar-driven photoelectrochemical (PEC) hydrogen production is one of the most effective strategies for solar-to-hydrogen energy conversion. Among various types of semiconductors used for PEC anodes, colloidal quantum dots (QDs) have been widely used as new and promising absorbers for PEC and other optoelectronic devices. However, currently, most efficient optoelectronic devices contain toxic Pb/Cd elements or non-earth-abundant elements (In/Ag). It is still a challenge to produce Pb/Cd-free QDs without using any toxic and non-earth-abundant elements. Here, we synthesized SnSe QDs via a diffusion-controlled hot injection approach and further stabilized the as-prepared SnSe QDs via a cation exchange reaction. The as-synthesized Zn-stabilized SnSe QDs (SnSe/ZnSe) have an orthorhombic crystal structure with indirect bandgaps ranging from 1 to 1.37 eV. Zn stabilization can significantly decrease the number of QD surface metallic Sn bonds, thereby decreasing the number of recombination centers of defects/traps. As a proof-of-concept, SnSe/ZnSe QDs are used as light absorbers for PEC hydrogen production, leading to a saturated photocurrent density of 7 mA cm-2, which is comparable to best values reported for PEC devices based on toxic-metal-free QDs. Our results indicate that Zn-stabilized SnSe QDs have great potential for use in emerging optoelectronic devices.
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Affiliation(s)
- Shihuan Ren
- College of Textiles & Clothing, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Maorong Wang
- State Key Laboratory of Bio-Fibers and Eco-Textiles & College of Physics, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, P. R. China.
| | - Xiaohan Wang
- College of Textiles & Clothing, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Guangting Han
- State Key Laboratory of Bio-Fibers and Eco-Textiles & College of Physics, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, P. R. China.
| | - Yuanming Zhang
- State Key Laboratory of Bio-Fibers and Eco-Textiles & College of Physics, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, P. R. China.
| | - Haiguang Zhao
- State Key Laboratory of Bio-Fibers and Eco-Textiles & College of Physics, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, P. R. China.
| | - Alberto Vomiero
- Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, SE-971 87 Luleå, Sweden and Department of Molecular Sciences and Nano Systems, Ca' Foscari University of Venice, Via Torino 155, 30172 Venezia Mestre, Italy.
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49
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Kumar M, Rani S, Singh Y, Gour KS, Singh VN. Tin-selenide as a futuristic material: properties and applications. RSC Adv 2021; 11:6477-6503. [PMID: 35423185 PMCID: PMC8694900 DOI: 10.1039/d0ra09807h] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Accepted: 12/26/2020] [Indexed: 12/14/2022] Open
Abstract
SnSe/SnSe2 is a promising versatile material with applications in various fields like solar cells, photodetectors, memory devices, lithium and sodium-ion batteries, gas sensing, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap. In this review, all possible applications of SnSe/SnSe2 have been summarized. Some of the basic properties, as well as synthesis techniques have also been outlined. This review will help the researcher to understand the properties and possible applications of tin selenide-based materials. Thus, this will help in advancing the field of tin selenide-based materials for next generation technology.
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Affiliation(s)
- Manoj Kumar
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Sanju Rani
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Yogesh Singh
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Kuldeep Singh Gour
- Optoelectronics Convergence Research Center, Chonnam National University Gwangju 61186 Republic of Korea
| | - Vidya Nand Singh
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
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50
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Kharatzadeh E, Masharian SR, Yousefi R. The effects of S-doping concentration on the photocatalytic performance of SnSe/S-GO nanocomposites. ADV POWDER TECHNOL 2021. [DOI: 10.1016/j.apt.2020.12.013] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
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