1
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Wang G, Zheng J, Xue J, Xu Y, Zheng Q, Hautier G, Lu H, Zhou Y. Observation of Extraordinary Vibration Scatterings Induced by Strong Anharmonicity in Lead-Free Halide Double Perovskites. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025:e2408149. [PMID: 39834123 DOI: 10.1002/advs.202408149] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2024] [Revised: 10/26/2024] [Indexed: 01/22/2025]
Abstract
Lead-free halide double perovskites provide a promising solution for the long-standing issues of lead-containing halide perovskites, i.e., the toxicity of Pb and the low stability under ambient conditions and high-intensity illumination. Their light-to-electricity or thermal-to-electricity conversion is strongly determined by the dynamics of the corresponding lattice vibrations. Here, the measurement of lattice dynamics is presented in a prototypical lead-free halide double perovskite(Cs2NaInCl6). The quantitative measurements and first-principles calculations show that the scatterings among lattice vibrations at room temperature are at the timescale of ≈1 ps, which stems from the extraordinarily strong anharmonicity in Cs2NaInCl6. Further the degree of anharmonicity of each type of atom is quantitatively characterized in the Cs2NaInCl6 single crystal, which stems from the interatomic forces, and demonstrate that this strong anharmonicity is synergistically contributed by the bond hierarchy, the tilting of the NaCl6 and InCl6 octahedral units, and the rattling of Cs+ ions. Consequently, the crystalline Cs2NaInCl6 possesses an ultralow thermal conductivity of ≈0.43 W mK-1 at room temperature, and a weak temperature dependence of T -0.41. These findings uncovered the underlying mechanisms behind the dynamics of lattice vibrations in double perovskites, which can largely benefit the design of optoelectronics and thermoelectrics based on halide double perovskites.
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Affiliation(s)
- Guang Wang
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, Hong Kong
| | - Jiongzhi Zheng
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Jie Xue
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yixin Xu
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, Hong Kong
| | - Qiye Zheng
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, Hong Kong
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Haipeng Lu
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yanguang Zhou
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, Hong Kong
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2
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Song X, Wang G, Li W, Gan S, Cai Y, Ma D, Luo Y, He Y, Wang N. Potential thermoelectric material Tl 3XS 4 (X = V, Nb, Ta) with ultralow lattice thermal conductivity. Phys Chem Chem Phys 2024; 27:539-549. [PMID: 39654496 DOI: 10.1039/d4cp04000g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2024]
Abstract
The demand for sustainable energy solutions has driven intensive research into advanced thermoelectric (TE) materials, to harness waste heat for efficient power generation. Recently, several studies have revealed that Tl3VS4 possesses an ultralow lattice thermal conductivity, despite its simple body-centered cubic lattice structure. This paper focuses on the TE properties of Tl3XS4 (X = V, Nb, Ta) compounds through a systematic exploration utilizing first-principles calculations and semiclassical Boltzmann transport theory. The results of the AIMD simulation and phonon calculation reveal the excellent dynamic stability and thermal stability of Tl3XS4 at 300, 500, and 700 K. Moreover, we find that the Tl3XS4 compounds present ultralow lattice thermal conductivity (<0.5 W m-1 K-1 at 300 K), and the nanostructure strategy is effective. Based on the outstanding Seebeck coefficient and ultralow lattice thermal conductivity, the optimal ZT values of Tl3VS4, Tl3NbS4, and Tl3TaS4 at 300 K are determined to be 1.17 (p-type), 0.84 (n-type), and 0.65 (p-type), respectively. Additionally, at each considered temperature, the maximum ZT values of p-type (n-type) Tl3XS4 follow the order: Tl3VS4 > Tl3NbS4 > Tl3TaS4 (Tl3NbS4 > Tl3VS4 > Tl3TaS4). Our results demonstrate that Tl3XS4 (X = V, Nb, Ta) compounds are promising thermoelectric materials. This exhaustive research enhanced our nuanced comprehension of the electronic, dynamic, and thermoelectric attributes of Tl3XS4 (X = V, Nb, Ta), thereby offering valuable insights into the TE field.
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Affiliation(s)
- Xiefei Song
- College of Physics and Information Engineering, Zhaotong University, Zhaotong 657000, Yunnan, China.
| | - Guangzhao Wang
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China
| | - Wenzhong Li
- College of Physics and Information Engineering, Zhaotong University, Zhaotong 657000, Yunnan, China.
| | - Siyu Gan
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, Sichuan, China.
| | - Yan Cai
- College of Physics and Information Engineering, Zhaotong University, Zhaotong 657000, Yunnan, China.
| | - Dianxu Ma
- College of Physics and Information Engineering, Zhaotong University, Zhaotong 657000, Yunnan, China.
| | - Yuhui Luo
- College of Physics and Information Engineering, Zhaotong University, Zhaotong 657000, Yunnan, China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, China.
| | - Ning Wang
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, Sichuan, China.
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3
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Gunatilleke WDCB, Ojo OP, Nolas GS. Origin of anisotropic thermal transport in CsPbBr 3. Chem Commun (Camb) 2024; 60:14200-14203. [PMID: 39530580 DOI: 10.1039/d4cc05037a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
We reveal the specific structural and bonding features that result in anisotropic thermal transport for CsPbBr3 by directional single-crystal measurements and elucidate the bases for the low Debye temperature and speed of sound. This work enhances the research on perovskites and reveals the structural features governing the thermal properties.
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Affiliation(s)
| | - Oluwagbemiga P Ojo
- Department of Physics, University of South Florida, Tampa, FL 33620, USA.
| | - George S Nolas
- Department of Physics, University of South Florida, Tampa, FL 33620, USA.
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4
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Rahman A, Kabir A, Mahmud T. Computational insights into transition metal-based BaCoX 3 (X = Cl, Br, I) halide perovskites for spintronics, photovoltaics, and renewable energy devices. Sci Rep 2024; 14:26457. [PMID: 39488571 PMCID: PMC11531479 DOI: 10.1038/s41598-024-76812-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2024] [Accepted: 10/16/2024] [Indexed: 11/04/2024] Open
Abstract
Ab-initio simulations using density functional theory (DFT) were employed to investigate the structural, mechanical, electronic, magnetic, optical, and thermoelectric properties of halide perovskites [Formula: see text] (X = Cl, Br, I). Structural optimization and mechanical stability assessments confirm the reliability of these perovskites in a hexagonal P[Formula: see text]mc symmetry. The stability of the ferromagnetic phase was validated through total crystal energy minimization via Murnaghan's equation of state. Electronic band structures and density of states, derived from the generalized gradient approximation (GGA), reveal a semiconducting ferromagnetic nature in the spin up channel, spotlighting their potential in semiconductor spintronic applications. Phonon dispersion analysis of [Formula: see text] and [Formula: see text] revealed positive phonon modes throughout the entire Brillouin zone, confirming their dynamical stability. In contrast, [Formula: see text] demonstrated dynamical instability. The elastic constants confirm the mechanical stability and ductile nature of the perovskites. Optical and dielectric properties of these perovskites show significant UV absorption and photoconductivity, making them highly suitable for optoelectronic and solar cell applications. Finally, transport properties, such as the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit (ZT) unveil their exceptional thermoelectric performance. Combining half-metallic ferromagnetic traits with superior thermoelectric and optoelectronic performance positions [Formula: see text] compounds as exceptional candidates for applications in spintronics, optoelectronics, and thermoelectrics. This comprehensive investigation demonstrates their ability to excel across a diverse array of advanced technological applications.
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Affiliation(s)
- Arafat Rahman
- Department of Physics, University of Dhaka, Dhaka, 1000, Bangladesh
| | - Alamgir Kabir
- Department of Physics, University of Dhaka, Dhaka, 1000, Bangladesh.
| | - Tareq Mahmud
- Department of Physics, University of Dhaka, Dhaka, 1000, Bangladesh
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5
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Wu Y, Ji J, Ding Y, Yang J, Zhou L. Ultralow Lattice Thermal Conductivity and Large Glass-Like Contribution in Cs 3Bi 2I 6Cl 3: Rattling Atoms and p-Band Electrons Driven Dynamic Rotation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2406380. [PMID: 39291431 PMCID: PMC11558099 DOI: 10.1002/advs.202406380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Revised: 08/28/2024] [Indexed: 09/19/2024]
Abstract
Understanding the origin of ultralow lattice thermal conductivity κL of halide perovskites is of great significance in the energy conversion field. The soft phonon modes and the large anharmonicity corresponding to the dynamic rotation of halogen atoms play an important role in limiting the thermal transport of halide perovskites. The dynamic rotation has long been thought to originate from the electrostatic repulsion of lone pairs around halogen atoms. Here, by studying the layered perovskite Cs3Bi2I6Cl3, it is found that the interaction between the lone pairs contributed by the s bands of halogen atoms is short-range, and the dynamic rotation is really driven by the occupied p-band electrons. It dominates Cs3Bi2I6Cl3 with ultralow κL, < 0.2 W mK-1 at 300 K. Moreover, soft optical phonons are presented ≈1 and 2.2 THz that constitute relatively flat and dense bands due to the rattling Cs and Cl atoms, contributing a large glass-like component to the κL. The results have important implications for understanding the origin of the ultralow κL in halide perovskites and for designing novel perovskites to serve the energy conversion field.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou)University of Electronic Science and TechnologyHuzhouZhejiang313001China
| | - Jialin Ji
- College of BiologicalChemical Sciences and EngineeringJiaxing UniversityJiaxingZhejiang314001China
| | - Yimin Ding
- Yangtze Delta Region Institute (Huzhou)University of Electronic Science and TechnologyHuzhouZhejiang313001China
| | - Jiong Yang
- Materials Genome InstituteShanghai UniversityShanghai200444China
- Zhejiang LaboratoryHangzhouZhejiang311100China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou)University of Electronic Science and TechnologyHuzhouZhejiang313001China
- School of Physics, State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and TechnologyChengduSichuan610054China
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6
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Chen X, Zhou J, Luo J, Zhang J, Qiu P, Shi X. Ultralow Thermal Conductivity in Vacancy-Ordered Halide Perovskite Cs 3Bi 2Br 9 with Strong Anharmonicity and Wave-Like Tunneling of Low-Energy Phonons. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2405276. [PMID: 39092684 DOI: 10.1002/smll.202405276] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2024] [Revised: 07/23/2024] [Indexed: 08/04/2024]
Abstract
Halide perovskites are of great interest due to their exceptional optical and optoelectronic properties. However, thermal conductivity of many halide perovskites remains unexplored. In this study, an ultralow lattice thermal conductivity κL (0.24 W m-1 K-1 at 300 K) is reported and its weak temperature dependence (≈T-0.27) in an all-inorganic vacancy-ordered halide perovskite, Cs3Bi2Br9. The intrinsically ultralow κL can be attributed to the soft low-lying phonon modes with strong anharmonicity, which have been revealed by combining experimental heat capacity and Raman spectroscopy measurements, and first-principles calculations. It is shown that the highly anharmonic phonons originate from the Bi 6s2 lone pair expression with antibonding states of Bi 6s and Br 4p orbitals driven by the dynamic BiBr6 octahedral distortion. Theoretical calculations reveal that these low-energy phonons are mostly contributed by large Br motions induced dynamic distortion of BiBr6 octahedra and large Cs rattling motions, verified by the synchrotron X-ray pair distribution function analysis. In addition, the weak temperature dependence of κL can be traced to the wave-like tunneling of phonons, induced by the low-lying phonon modes. This work reveals the strong anharmonicity and wave-like tunneling of low-energy phonons for designing efficient vacancy-ordered halide perovskites with intrinsically low κL.
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Affiliation(s)
- Xingyu Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiali Zhou
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jun Luo
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiawei Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Pengfei Qiu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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7
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Wang T, Ha J, Mo T, Heo SH, Hwang H, Han H, Kim CJ, Dickey MD, Jin H, Son JS. Ultrahigh Electrical Conductivity in p-Type CsPbI 2Br Perovskite Thin Films by Modulation Doping. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39352814 DOI: 10.1021/acsami.4c11775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2024]
Abstract
The widespread adoption of halide perovskites for application in thermoelectric devices, DC power generators, and lasers is hindered by their low charge carrier concentration. In particular, increasing their charge carrier concentration is considered the main challenge to serve as a promising room-temperature thermoelectric material. Efforts have been devoted to enhancing the charge carrier concentration by doping and composition engineering. However, the coupling between charge carrier concentration and mobility, along with the poor stability of these materials, impedes their development for thermoelectric applications. Herein, we demonstrate the successful increase in the charge carrier concentration of CsPbI2Br by forming a heterojunction structure with Cu2S via a facile spin-coating method. The excellent band alignment between two materials combined with a charge-transfer mechanism realizes the modulation doping, resulting in 8 orders of magnitude increase in carrier concentration from 1012 to 1020 cm-3 without detrimental effect on the carrier mobility of CsPbI2Br. The thermoelectric power factor of the heterostructured CsPbI2Br reached 6.6 μW/m·K2, which is 330 times higher than that of pristine CsPbI2Br. Furthermore, these films showed higher humidity stability than the control films. This study offers a promising avenue for increasing the charge carrier concentration of halide perovskites, thereby enhancing their potential for various applications.
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Affiliation(s)
- Teng Wang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Jangwoo Ha
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Taejoon Mo
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Seung Hwae Heo
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Hyein Hwang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Hyunjin Han
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Michael D Dickey
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Hyungyu Jin
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
| | - Jae Sung Son
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongsangbuk-do 37673, Republic of Korea
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8
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Chen T, Ran Q, Wang Y, Zhang W, Tang X, Han Y, Zhang K. A Flexible Memristor Based on CsPbCl 3 Nanocrystals for an Artificial Nociceptor. J Phys Chem Lett 2024; 15:8555-8561. [PMID: 39137320 DOI: 10.1021/acs.jpclett.4c01944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
Halide perovskites (HPs) based memristors show great potential in the simulation of biological neurons. Herein, a memristor with Ag/PMMA&CsPbCl3/ITO structure is developed by incorporating CsPbCl3 nanocrystals (NCs) into poly(methyl methacrylate) (PMMA) as the functional layer. The device exhibits typical bipolar resistive behavior, low operating voltage, good endurance of more than 400 cycles, consistent and excellent ON/OFF ratio (≈ 103), and high mechanical bending stability (bending times = 1000). The RS mechanism has been well explained by the electric field induced formation and rupture of Ag filaments in the PMMA&CsPbCl3 layer. More importantly, the memristor successfully displays fundamental nociceptive functions including threshold, nonadaptation, relaxation, and sensitization (allodynia and hyperalgesia). To demonstrate the feasibility of the artificial nociceptor, a pressure nociceptor system is constructed using the Ag/PMMA&CsPbCl3/ITO device. These results provide new perspectives for the development of next-generation, high-performance HPs based neural morphology devices.
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Affiliation(s)
- Ting Chen
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Qian Ran
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Yuchan Wang
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wenxia Zhang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xiaosheng Tang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Yemei Han
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Kailiang Zhang
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
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9
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Tang T, Tang Y. First-principles investigations of Fe-based A 3BX ceramics with high stiffness and damage tolerance. Phys Chem Chem Phys 2024. [PMID: 39034842 DOI: 10.1039/d4cp01244e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
In the search for high-stiffness and damage-tolerant materials, Fe-based A3BX carbide and nitride anti-perovskites were studied using first-principles calculations. These perovskites were found to be stable in cubic structures, as substantiated by the formation energy, elastic Born stability criterion, and phonon dispersion spectrum analysis. The GGA functional was applied for geometry optimization, and the lattice constants are found to be 3.730 Å, 3.715 Å, 3.832 Å, and 3.828 Å for Fe3AlC, Fe3AlN, Fe3SnC, and Fe3SnN, respectively. Elastic property analysis reveals that all the materials have large elastic moduli, high sound velocities, and high Debye temperatures. Among them, carbides have superior stiffness and quasi-ductile properties, and they can be further improved by applying additional pressure. Preliminary analysis of electronic properties indicates that they are ferromagnetic and metallic compounds. Their high melting temperatures (>2600 K) confirm their potential in high-temperature applications. The lowest thermal conductivity of Fe3SnN suggests its potential in efficient solid-state refrigeration application. Moreover, Fe3SnC is proposed to be a viable damage-tolerant material with good prospects. Under 10 GPa external pressure, it possesses a ductile structure with a Young's modulus of 402.15 GPa and bulk modulus of 280.25 GPa.
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Affiliation(s)
- Tianyu Tang
- School of Physics, Guizhou University, Guiyang 550025, China.
| | - Yanlin Tang
- School of Physics, Guizhou University, Guiyang 550025, China.
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10
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A Bird T, Chen J, Songvilay M, Stock C, T Wharmby M, C Bristowe N, S Senn M. Large dynamic scissoring mode displacements coupled to band gap opening in the cubic phase of the methylammonium lead halide perovskites. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:415402. [PMID: 38914103 DOI: 10.1088/1361-648x/ad5b44] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Accepted: 06/24/2024] [Indexed: 06/26/2024]
Abstract
Hybrid perovskites are a rapidly growing research area, having reached photovoltaic power conversion efficiencies of over 25%. There is a increasing consensus that the structures of these materials, and hence their electronic structures, cannot be understood purely from the time and space averaged crystal structures observable by conventional methods. We apply a symmetry-motivated analysis method to analyse x-ray pair distribution function data of the cubic phases of the hybrid perovskites MAPbX3(X= I, Br, Cl). We demonstrate that, even in the cubic phase, the local structure of the inorganic components of MAPbX3(X= I, Br, Cl), are dominated by scissoring type deformations of the PbX6octahedra. We find these modes to have a larger amplitude than equivalent distortions in theA-site deficient perovskite ScF3and demonstrate that they show a significant departure from the harmonic approximation. Calculations performed on an inorganic perovskite analogue, FrPbBr3, show that the large amplitudes of the scissoring modes are coupled to a dynamic opening of the electronic band gap. Finally, we use density functional theory calculations to show that the organic MA cations reorientate to accommodate the large amplitude scissoring modes.
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Affiliation(s)
- Tobias A Bird
- Diamond Light Source, Harwell Science & Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Jungshen Chen
- Nano-Science Center & Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Manila Songvilay
- Institut Néel, CNRS and Université Grenoble Alpes, 38000 Grenoble, France
| | - Chris Stock
- School of Physics and Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
| | - Michael T Wharmby
- Deutsches Elektronen-Synchrotron (DESY), Notkestr. 85, 22607 Hamburg, Germany
| | - Nicholas C Bristowe
- Centre for Materials Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
| | - Mark S Senn
- Department of Chemistry, University of Warwick, Gibbet Hill, Coventry CV4 7AL, United Kingdom
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11
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López C, Abia C, Gainza J, Rodrigues JE, Martinelli B, Serrano-Sánchez F, Silva RS, Ferrer MM, Dura OJ, Martínez JL, Fernández-Díaz MT, Alonso JA. Unveiling the Structural Properties, Optical Behavior, and Thermoelectric Performance of 2D CsSn 2Br 5 Halide Obtained by Mechanochemistry. Inorg Chem 2024; 63:12641-12650. [PMID: 38920333 PMCID: PMC11234366 DOI: 10.1021/acs.inorgchem.4c01861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2024] [Revised: 06/12/2024] [Accepted: 06/18/2024] [Indexed: 06/27/2024]
Abstract
Metal halide perovskites with a two-dimensional structure are utilized in photovoltaics and optoelectronics. High-crystallinity CsSn2Br5 specimens have been synthesized via ball milling. Differential scanning calorimetry curves show melting at 553 K (endothermic) and recrystallization at 516 K (exothermic). Structural analysis using synchrotron X-ray diffraction data, collected from 100 to 373 K, allows for the determination of Debye model parameters. This analysis provides insights into the relative Cs-Br and Sn-Br chemical bonds within the tetragonal structure (space group: I4/mcm), which remains stable throughout the temperature range studied. Combined with neutron data, X-N techniques permit the identification of the Sn2+ lone electron pair (5s2) in the two-dimensional framework, occupying empty space opposite to the four Sn-Br bonds of the pyramidal [SnBr4] coordination polyhedra. Additionally, diffuse reflectance UV-vis spectroscopy unveils an indirect optical gap of approximately ∼3.3 eV, aligning with the calculated value from the B3LYP-DFT method (∼3.2 eV). The material exhibits a positive Seebeck coefficient as high as 6.5 × 104 μV K-1 at 350 K, which evolves down to negative values of -3.0 × 103 μV K-1 at 550 K, surpassing values reported for other halide perovskites. Notably, the thermal conductivity remains exceptionally low, between 0.32 and 0.25 W m-1 K-1.
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Affiliation(s)
- Carlos
Alberto López
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
- INTEQUI,
(UNSL-CONICET) and Facultad de Química, Bioquímica y
Farmacia, UNSL, Almirante
Brown 1455, 5700 San Luis, Argentina
| | - Carmen Abia
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
- Institut
Laue Langevin, 38042 Grenoble, Cedex, France
| | - Javier Gainza
- European Synchrotron
Radiation Facility (ESRF), 71 Avenue des Martyrs, 38000 Grenoble, France
| | - João Elias Rodrigues
- CELLS−ALBA
Synchrotron Light Facility, Cerdanyola del Valles, Barcelona E-08290, Spain
| | - Brenda Martinelli
- CCAF, PPGCEM/CDTec, Federal University of Pelotas, 96010-610 Pelotas, Rio Grande do Sul, Brazil
| | | | - Romualdo Santos Silva
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
| | - Mateus M. Ferrer
- CCAF, PPGCEM/CDTec, Federal University of Pelotas, 96010-610 Pelotas, Rio Grande do Sul, Brazil
| | - Oscar J. Dura
- Departamento
de Física Aplicada, Universidad de
Castilla-La Mancha, Ciudad
Real E-13071, Spain
| | - José Luis Martínez
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
| | | | - José Antonio Alonso
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
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12
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Wang G, Fan H, Chen Z, Gao Y, Wang Z, Li Z, Lu H, Zhou Y. Tuning Thermal Conductivity of Hybrid Perovskites through Halide Alloying. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401194. [PMID: 38647250 PMCID: PMC11220660 DOI: 10.1002/advs.202401194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 03/24/2024] [Indexed: 04/25/2024]
Abstract
Tuning the thermal transport properties of hybrid halide perovskites is critical for their applications in optoelectronics, thermoelectrics, and photovoltaics. Here, an effective strategy is demonstrated to modulate the thermal transport property of hybrid perovskites by halide alloying. A highly tunable thermal conductivity of mixed-halide hybrid perovskites is achieved due to halide-alloying and structural distortion. The experimental measurements show that the room temperature thermal conductivity of MAPb(BrxI1- x)3 (x = 0─1) can be largely modulated from 0.27 ± 0.07 W m-1 K-1 (x = 0.5) to 0.47 ± 0.09 W m-1 K-1 (x = 1). Molecular dynamics simulations further demonstrate that the thermal conductivity reduction of hybrid halide perovskites results from the suppression of the mean free paths of the low-frequency acoustic and optical phonons. It is found that halide alloying and the induced structural distortion can largely increase the scatterings of optical and acoustic phonons, respectively. The confined diffusion of MA+ cations in the octahedra cage is found to act as an additional thermal transport channel in hybrid perovskites and can contribute around 10-20% of the total thermal conductivity. The findings provide a strategy for tailoring the thermal transport in hybrid halide perovskites, which may largely benefit their related applications.
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Affiliation(s)
- Guang Wang
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina
| | - Hongzhao Fan
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina
| | - Zhongwei Chen
- Department of ChemistryThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina
| | - Yufei Gao
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of EducationSchool of Energy and Power EngineeringDalian University of TechnologyDalian116024China
| | - Zuankai Wang
- Department of Mechanical EngineeringThe Hong Kong Polytechnic UniversityDalianHong Kong SARChina
| | - Zhigang Li
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina
| | - Haipeng Lu
- Department of ChemistryThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina
| | - Yanguang Zhou
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina
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13
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Repa GM, Knepp ZJ, Fredin LA. A-Site Doping to Alter Oxygen Vacancy Diffusion in SrTiO 3. ACS OMEGA 2024; 9:26719-26723. [PMID: 38911724 PMCID: PMC11191107 DOI: 10.1021/acsomega.4c04099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2024] [Revised: 05/18/2024] [Accepted: 05/24/2024] [Indexed: 06/25/2024]
Abstract
Doped SrTiO3 is a promising material for many applications where oxygen vacancy diffusion is either critical to device function or a source of failure. This work provides new insight into long-range oxygen vacancy diffusion in SrTiO3 doped with Mn2+, Cr3+, or Fe2+ on the A-site. Density functional theory and the nudged elastic band method are used to calculate oxygen vacancy diffusion barriers adjacent to the dopant and at remote sites. Relative to the pure SrTiO3 structure, doping was found to raise the diffusion barrier for VO •• vacancies and lower the diffusion barrier for VO x vacancies. Furthermore, a doping trapping radius of 6 Å was found for both the VO x and VO •• vacancies. Counterintuitively, trapping was observed even in supercells where vacancies and dopants are both positively charged. These results provide new insight into how less common A-site doping can change the electronic structure of this important material.
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Affiliation(s)
- Gil M. Repa
- Department of Chemistry, Lehigh
University, Bethlehem, Pennsylvania 18015, United States
| | - Zachary J. Knepp
- Department of Chemistry, Lehigh
University, Bethlehem, Pennsylvania 18015, United States
| | - Lisa A. Fredin
- Department of Chemistry, Lehigh
University, Bethlehem, Pennsylvania 18015, United States
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14
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Negi A, Yan L, Yang C, Yu Y, Kim D, Mukherjee S, Comstock AH, Raza S, Wang Z, Sun D, Ade H, Tu Q, You W, Liu J. Anomalous Correlation between Thermal Conductivity and Elastic Modulus in Two-Dimensional Hybrid Metal Halide Perovskites. ACS NANO 2024; 18:14218-14230. [PMID: 38787298 DOI: 10.1021/acsnano.3c12172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Device-level implementation of soft materials for energy conversion and thermal management demands a comprehensive understanding of their thermal conductivity and elastic modulus to mitigate thermo-mechanical challenges and ensure long-term stability. Thermal conductivity and elastic modulus are usually positively correlated in soft materials, such as amorphous macromolecules, which poses a challenge to discover materials that are either soft and thermally conductive or hard and thermally insulative. Here, we show anomalous correlations of thermal conductivity and elastic modulus in two-dimensional (2D) hybrid organic-inorganic perovskites (HOIP) by engineering the molecular interactions between organic cations. By replacing conventional alkyl-alkyl and aryl-aryl type organic interactions with mixed alkyl-aryl interactions, we observe an enhancement in elastic modulus with a reduction in thermal conductivity. This anomalous dependence provides a route to engineer thermal conductivity and elastic modulus independently and a guideline to search for better thermal management materials. Further, introducing chirality into the organic cation induces a molecular packing that leads to the same thermal conductivity and elastic modulus regardless of the composition across all half-chiral 2D HOIPs. This finding provides substantial leeway for further investigations in chiral 2D HOIPs to tune optoelectronic properties without compromising thermal and mechanical stability.
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Affiliation(s)
- Ankit Negi
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Liang Yan
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States
| | - Cong Yang
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Yeonju Yu
- Department of Materials Science & Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Doyun Kim
- Department of Materials Science & Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Subhrangsu Mukherjee
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Andrew H Comstock
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Saqlain Raza
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Ziqi Wang
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Dali Sun
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Harald Ade
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Qing Tu
- Department of Materials Science & Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Wei You
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States
| | - Jun Liu
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
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15
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Yang Y, He B, Jia Z, Li R, Yu X, Wang D, Lei C, Liu Y, Liang GX, Wang J, Zheng H, Lin Q. Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals. NANO LETTERS 2024. [PMID: 38833670 DOI: 10.1021/acs.nanolett.4c01959] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Bismuth-based chalcogenides have emerged as promising candidates for next-generation, solution-processable semiconductors, mainly benefiting from their facile fabrication, low cost, excellent stability, and tunable optoelectronic properties. Particularly, the recently developed AgBiS2 solar cells have shown striking power conversion efficiencies. High performance bismuth-based photodetectors have also been extensively studied in the past few years. However, the fundamental properties of these Bi-based semiconductors have not been sufficiently investigated, which is crucial for further improving the device performance. Here, we introduce multiple time-resolved and steady-state techniques to fully characterize the charge carrier dynamics and charge transport of solution-processed Bi-based nanocrystals. It was found that the Ag-Bi ratio plays a critical role in charge transport. For Ag-deficient samples, silver bismuth sulfide thin films behave as localized state induced hopping charge transport, and the Ag-excess samples present band-like charge transport. This finding is crucial for developing more efficient Bi-based semiconductors and optoelectronic devices.
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Affiliation(s)
- Yujie Yang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
- Hubei Luojia Laboratory, Wuhan 430072, China
| | - Bohua He
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
| | - Zhenglin Jia
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
- Hubei Luojia Laboratory, Wuhan 430072, China
| | - Ruiming Li
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
- Hubei Luojia Laboratory, Wuhan 430072, China
| | - Xuan Yu
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Du Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Cheng Lei
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Yong Liu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
| | - Guang-Xing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China
| | - Jianbo Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
| | - He Zheng
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
| | - Qianqian Lin
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
- Hubei Luojia Laboratory, Wuhan 430072, China
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16
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Trifiletti V, Massetti M, Calloni A, Luong S, Pianetti A, Milita S, Schroeder BC, Bussetti G, Binetti S, Fabiano S, Fenwick O. Bismuth-Based Perovskite Derivates with Thermal Voltage Exceeding 40 mV/K. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:5408-5417. [PMID: 38595774 PMCID: PMC11000217 DOI: 10.1021/acs.jpcc.3c06324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 03/01/2024] [Accepted: 03/04/2024] [Indexed: 04/11/2024]
Abstract
Heat is an inexhaustible source of energy, and it can be exploited by thermoelectronics to produce electrical power or electrical responses. The search for a low-cost thermoelectric material that could achieve high efficiencies and can also be straightforwardly scalable has turned significant attention to the halide perovskite family. Here, we report the thermal voltage response of bismuth-based perovskite derivates and suggest a path to increase the electrical conductivity by applying chalcogenide doping. The films were produced by drop-casting or spin coating, and sulfur was introduced in the precursor solution using bismuth triethylxanthate. The physical-chemical analysis confirms the substitution. The sulfur introduction caused resistivity reduction by 2 orders of magnitude, and the thermal voltage exceeded 40 mV K-1 near 300 K in doped and undoped bismuth-based perovskite derivates. X-ray diffraction, Raman spectroscopy, and grazing-incidence wide-angle X-ray scattering were employed to confirm the structure. X-ray photoelectron spectroscopy, elemental analysis, scanning electron microscopy, and energy-dispersive X-ray spectroscopy were employed to study the composition and morphology of the produced thin films. UV-visible absorbance, photoluminescence, inverse photoemission, and ultraviolet photoelectron spectroscopies have been used to investigate the energy band gap.
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Affiliation(s)
- Vanira Trifiletti
- Department
of Materials Science and L-NESS, University
of Milano-Bicocca, Via
Cozzi 55, I-20125 Milan, Italy
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, United Kingdom
| | - Matteo Massetti
- Laboratory
of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping SE-601
74, Sweden
| | - Alberto Calloni
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano, Italy
| | - Sally Luong
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, United Kingdom
| | - Andrea Pianetti
- Department
of Materials Science and L-NESS, University
of Milano-Bicocca, Via
Cozzi 55, I-20125 Milan, Italy
| | - Silvia Milita
- Institute
for Microelectronics and Microsystems (CNRIMM), Via Piero Gobetti 101, 40129 Bologna, Italy
| | - Bob C. Schroeder
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
| | - Gianlorenzo Bussetti
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano, Italy
| | - Simona Binetti
- Department
of Materials Science and L-NESS, University
of Milano-Bicocca, Via
Cozzi 55, I-20125 Milan, Italy
| | - Simone Fabiano
- Laboratory
of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping SE-601
74, Sweden
| | - Oliver Fenwick
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, United Kingdom
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17
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Niu G, Jiang J, Wang X, Che L, Sui L, Wu G, Yuan K, Yang X. Time-Resolved Dynamics of Metal Halide Perovskite under High Pressure: Recent Progress and Challenges. J Phys Chem Lett 2024; 15:1623-1635. [PMID: 38306470 DOI: 10.1021/acs.jpclett.3c03548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2024]
Abstract
Metal halide perovskites have garnered significant attention in the scientific community for their promising applications in optoelectronic devices. The application of pressure engineering, a viable technique, has played a crucial role in substantially improving the optoelectronic characteristics of perovskites. Despite notable progress in understanding ground-state structural changes under high pressure, a comprehensive exploration of excited-state dynamics influencing luminescence remains incomplete. This Perspective delves into recent advances in time-resolved dynamics studies of photoexcited metal halide perovskites under high pressure. With a focus on the intricate interplay between structural alterations and electronic properties, we investigate electron-phonon interactions, carrier transport mechanisms, and the influential roles of self-trapped excitons (STEs) and coherent phonons in luminescence. However, significant challenges persist, notably the need for more advanced measurement techniques and a deeper understanding of the phenomena induced by high pressure in perovskites.
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Affiliation(s)
- Guangming Niu
- Marine Engineering College, Dalian Maritime University, Dalian 116026, P. R. China
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road, Dalian 116023, P. R. China
| | - Jutao Jiang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road, Dalian 116023, P. R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P. R. China
| | - Xiaowei Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road, Dalian 116023, P. R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P. R. China
| | - Li Che
- Department of Physics School of Science, Dalian Maritime University, Dalian 116026, P. R. China
| | - Laizhi Sui
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road, Dalian 116023, P. R. China
| | - Guorong Wu
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road, Dalian 116023, P. R. China
| | - Kaijun Yuan
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road, Dalian 116023, P. R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P. R. China
- Hefei National Laboratory, Hefei 230088, China
| | - Xueming Yang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road, Dalian 116023, P. R. China
- Hefei National Laboratory, Hefei 230088, China
- Department of Chemistry College of Science, Southern University of Science and Technology, Shenzhen 518055, P. R. China
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18
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Xu Y, Wang X, Liu S, Pan Y, Perveen A, Onwudiwe DC, Fayemi OE, Elemike EE, Bae BS, Zhu Y, Talaighil RZ, Zhang X, Chen J, Zhao Z, Li Q, Lei W, Xu X. Sensitive Thermography via Sensing Visible Photons Detected from the Manipulation of the Trap State in MAPbX 3. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56526-56536. [PMID: 38014498 DOI: 10.1021/acsami.3c13305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Sensitive thermometry or thermography by responding to blackbody radiation is urgently desired in the intelligent information life, including scientific research, medical diagnosis, remote sensing, defense, etc. Even though thermography techniques based on infrared sensing have undergone unprecedented development, the poor compatibility with common optical components and the high diffraction limit impose an impediment to their integration into the established photonic integrated circuit or the realization of high-spatial-resolution and high-thermal-resolution imaging. In this work, we present a sensitive temperature-dependent visible photon detection in Bi-doped MAPbX3 (X = Cl, Br, and I) and employ it for uncooled thermography. Systematic measurements reveal that the Bi dopant introduces trap states in MAPbX3, thermal energy facilitates the carriers jumping from trap states to the conduction band, while the vacancies of trap states ensure the sequential absorption of visible photons with energy less than the band gap. Subsequently, the change of response toward the visible photon is applied to construct the thermograph, and it possesses a specific sensitivity of 2.11% K-1 along temperature variation. As a result, our thermograph presents a temperature resolution of 0.21 nA K-1, a high responsivity of 2.06 mA W-1, and a high detectivity of 2.08 × 109 Jones at room temperature. Furthermore, remote thermal imaging is successfully achieved with our thermograph.
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Affiliation(s)
- Yubing Xu
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Xin Wang
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Shilin Liu
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Yuzhu Pan
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Abida Perveen
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Damian Chinedu Onwudiwe
- Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | - Omolola Esther Fayemi
- Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | - Elias Emeka Elemike
- Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | - Byung Seong Bae
- Department of Electronics & Display Engineering, Hoseo University, Hoseo Ro 79, Asan city, Chungnam 31499, Republic of Korea
| | - Ying Zhu
- E-xray Electronic Co. Ltd., Suzhou 215000, China
| | - Razika Zair Talaighil
- Institute of Electrical & Electronic Engineering, M'hamed Bougara University of Boumerdes, Boumerdes 35000, Algeria
| | - Xiaobing Zhang
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Jing Chen
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Zhiwei Zhao
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Qing Li
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Wei Lei
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Xiaobao Xu
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
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19
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Zhang K, Zhang L, Saravana Karthikeyan SKS, Kong CY, Zhang F, Guo X, Dang NN, Ramaraj SG, Liu X. Structural, electronic, optical, elastic, thermodynamic and thermal transport properties of Cs 2AgInCl 6 and Cs 2AgSbCl 6 double perovskite semiconductors using a first-principles study. Phys Chem Chem Phys 2023; 25:31848-31868. [PMID: 37968998 DOI: 10.1039/d3cp03795a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2023]
Abstract
In this study, we employ the framework of first-principles density functional theory (DFT) computations to investigate the physical, electrical, bandgap and thermal conductivity of Cs2AgInCl6-CAIC (type I) and Cs2AgSbCl6-CASC (type II) using the GGA-PBE method. CAIC possesses a direct band gap energy of 1.812 eV, while CASC demonstrates an indirect band gap energy of 0.926 eV. The CAIC and CASC exhibit intriguingly reduced thermal conductivity, which can be attributed to the notable reduction in their respective Debye temperatures, measuring 182 K and 135 K, respectively. The Raman active modes computed under ambient conditions have been compared with real-world data, showing excellent agreement. The thermal conductivity values of CAIC and CASC compounds exhibit quantum mechanical characteristics, with values of 0.075 and 0.25 W m-1 K-1, respectively, at 300 K. It is foreseen that these outcomes will generate investigations concerning phosphors and diodes that rely on single emitters, with the aim of advancing lighting and display technologies in the forthcoming generations.
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Affiliation(s)
- Keqing Zhang
- School of Chemical Engineering, Henan Technical Institute, Zhengzhou, Henan, 450042, P. R. China
| | - Lijun Zhang
- School of Chemical Engineering, Henan Technical Institute, Zhengzhou, Henan, 450042, P. R. China
| | - S K S Saravana Karthikeyan
- Department of Environment and Energy System, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
| | - Chang Yi Kong
- Department of Environment and Energy System, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
- Department of Applied Chemistry and Biochemical Engineering, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
| | - Fuchun Zhang
- School of Physics and Electronic Information, Yan'an University, Yan'an, 716000, China
| | - Xiang Guo
- Science and Technology on Aerospace Chemical Power Laboratory, Hubei Institute of Aerospace Chemotechnology, Xiangyang 441003, Hubei, China.
| | - Nam Nguyen Dang
- Future Materials & Devices Lab., Institute of Fundamental and Applied Sciences, Duy Tan University, Ho Chi Minh City, Vietnam
- The Faculty of Environmental and Chemical Engineering, Duy Tan University, Danang, Vietnam
| | - Sankar Ganesh Ramaraj
- Department of Bioengineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-8656, Japan.
- Department of Materials Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences (SIMTS), Thandalam, Chennai - 602105, Tamilnadu, India
| | - Xinghui Liu
- Science and Technology on Aerospace Chemical Power Laboratory, Hubei Institute of Aerospace Chemotechnology, Xiangyang 441003, Hubei, China.
- Division of Research and Development, Lovely Professional University, Phagwara, 144411, India
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20
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Niu X, Li N, Cui Z, Li L, Pei F, Lan Y, Song Q, Du Y, Dou J, Bao Z, Wang L, Liu H, Li K, Zhang X, Huang Z, Wang L, Zhou W, Yuan G, Chen Y, Zhou H, Zhu C, Liu G, Bai Y, Chen Q. Anion Confinement for Homogeneous Mixed Halide Perovskite Film Growth by Electrospray. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305822. [PMID: 37565713 DOI: 10.1002/adma.202305822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Revised: 08/01/2023] [Indexed: 08/12/2023]
Abstract
Wide-bandgap perovskites are promising absorbers for state-of-the-art tandem solar cells to feasibly surpass Shockley-Queisser limit with low cost. However, the commonly used mixed halide perovskites suffer from poor stability; particularly, photoinduced phase segregation. Electrospray deposition is developed to bridge the gap of growth rate between iodide and bromide components during film growth by spatially confining the anion diffusion and eliminating the kinetic difference, which universally improves the initial homogeneity of perovskite films regardless of device architectures. It thus promotes the efficiency and stability of corresponding solar cells based on wide-bandgap (1.68 eV) absorbers. Remarkable power conversion efficiencies (PCEs) of 21.44% and 20.77% are achieved in 0.08 cm2 and 1.0 cm2 devices, respectively. In addition, these devices maintain 90% of their initial PCE after 1550 h of stabilized power output (SPO) tracking upon one sun irradiation (LED) at room temperature.
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Affiliation(s)
- Xiuxiu Niu
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Nengxu Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhenhua Cui
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Liang Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Fengtao Pei
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yisha Lan
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Qizhen Song
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yujiang Du
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Jing Dou
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zhaoboxun Bao
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Lina Wang
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Huifen Liu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Kailin Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xinran Zhang
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zijian Huang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lan Wang
- School of Internet of Things Engineering, Jiangnan University, Wuxi, Jiangsu, 214122, China
| | - Wentao Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Guizhou Yuan
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yihua Chen
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Huanping Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Cheng Zhu
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Guilin Liu
- School of Science, Jiangnan University, Wuxi, Jiangsu, 214122, China
| | - Yang Bai
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Qi Chen
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
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21
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Jung Y, Lee W, Han S, Kim BS, Yoo SJ, Jang H. Thermal Transport Properties of Phonons in Halide Perovskites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204872. [PMID: 36036368 DOI: 10.1002/adma.202204872] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 08/21/2022] [Indexed: 06/15/2023]
Abstract
Halide perovskites have emerged as promising candidates for various applications, such as photovoltaic, optoelectronic and thermoelectric applications. The knowledge of the thermal transport of halide perovskites is essential for enhancing the device performance for these applications and improving the understanding of heat transport in complicated material systems with atomic disorders. In this work, the current understanding of the experimentally and theoretically obtained thermal transport properties of halide perovskites is reviewed. This study comprehensively examines the reported thermal conductivity of methylammonium lead iodide, which is a prototype material, and provides theoretical frameworks for its lattice vibrational properties. The frameworks and discussions are extended to other halide perovskites and derivative structures. The implications for device applications, such as solar cells and thermoelectrics, are discussed.
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Affiliation(s)
- Yoonseong Jung
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Wonsik Lee
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Seungbin Han
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Beom-Soo Kim
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, South Korea
| | - Seung-Jun Yoo
- Future Technology, LG Chem, Seoul, 07796, South Korea
| | - Hyejin Jang
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
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22
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Yuan J, Chen Y, Liao B. Lattice Dynamics and Thermal Transport in Semiconductors with Anti-Bonding Valence Bands. J Am Chem Soc 2023; 145:18506-18515. [PMID: 37566730 DOI: 10.1021/jacs.3c05091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2023]
Abstract
Achieving high thermoelectric performance requires efficient manipulation of thermal conductivity and a fundamental understanding of the microscopic mechanisms of phonon transport in crystalline solids. One of the major challenges in thermal transport is achieving ultralow lattice thermal conductivity. In this study, we use the anti-bonding character of the highest-occupied valence band as an efficient descriptor for discovering new materials with an ultralow thermal conductivity. We first examined the relationship between anti-bonding valence bands (ABVBs) and low lattice thermal conductivity in model systems PbTe and CsPbBr3. Then, we conducted a high-throughput search in the Materials Project database and identified over 600 experimentally stable binary semiconductors with an anti-bonding character in their valence bands. From our candidate list, we conducted a comprehensive analysis of the chemical bonds and the thermal transport in the XS family, where X = K, Rb, and Cs are alkaline metals. These materials all exhibit ultralow thermal conductivities less than 1 W/(m K) at room temperature despite simple structures. We attributed the ultralow thermal conductivity to the weakened bonds and increased phonon anharmonicity due to their ABVBs. Our results provide chemical intuitions to understand lattice dynamics in crystals and open up a convenient venue toward searching for materials with an intrinsically low lattice thermal conductivity.
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Affiliation(s)
- Jiaoyue Yuan
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Yubi Chen
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Bolin Liao
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
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23
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Wu LK, Zou QH, Yao HQ, Ye HY, Li JR. Zero-dimensional organic-inorganic hybrid manganese bromide with coexistence of dielectric-thermal double switches and efficient photoluminescence. Dalton Trans 2023; 52:11558-11564. [PMID: 37545469 DOI: 10.1039/d3dt01823g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/08/2023]
Abstract
Zero-dimensional (0D) hybrid metal halides have attracted much attention due to their rich composition, excellent optical stability, large exciton binding energy, etc. Photoelectric switchable multifunctional materials can integrate multiple physical properties (e.g., ferroelectricity, photoluminescence, magnetic, etc.) into one device and are widely used in many fields such as smart switches, sensors, etc. However, multifunctional materials with thermal energy storage, stimulant dielectric response, and light-emitting properties are rarely reported. Here, we synthesized a new organic-inorganic hybrid metal halide single crystal [TEMA]2MnBr4 (1) (TEMA+ = triethylmethylammonium). Compound 1 undergoes a reversible phase transition at a high temperature of 344/316 K, having a large thermal hysteresis of 28 K and exhibits high stability dielectric switching characteristics near the phase transition temperature. The single crystal exhibits green emission at 513 nm under UV excitation, originating from the 4T1g(G) → 6A1g(S) transition of Mn2+ ions. Excitingly, this single crystal's photoluminescence quantum yield (PLQY) is as high as 80.78%. This work provides a strategy for the development of organic-inorganic hybrid optoelectronic multifunctional materials with high-efficient light emission and switchable dielectric properties.
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Affiliation(s)
- Ling-Kun Wu
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China.
| | - Qing-Hua Zou
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China.
| | - Hai-Quan Yao
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China.
| | - Heng-Yun Ye
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China.
| | - Jian-Rong Li
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China.
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24
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Fei J, Zhang X, Li J, Li M, Long M. First-principles predictions of enhanced thermoelectric properties for Cs 2SnI 2Cl 2and Cs 2PbI 2Cl 2monolayers with spin-orbit coupling. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:435703. [PMID: 37467759 DOI: 10.1088/1361-648x/ace8e1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Accepted: 07/19/2023] [Indexed: 07/21/2023]
Abstract
Inspired by the exceptional charge transport properties and ultra-low thermal conductivity of halide perovskite, we investigate the electronic nature, thermal transport, and thermoelectric properties for Ruddlesden-Popper all-inorganic perovskite, Cs2SnI2Cl2and Cs2PbI2Cl2monolayers, using first-principles calculations. During the calculations, spin-orbit coupling has been considered for electronic transport as well as thermoelectric properties. The results show that the Cs2SnI2Cl2and Cs2PbI2Cl2monolayers exhibit high carrier mobility and low thermal conductivity. Stronger phonon-phonon interaction is responsible for the fact that thermal conductivity of Cs2SnI2Cl2monolayer is much lower than that of Cs2PbI2Cl2monolayer. At 700 K, the values of the figure of merit (ZT) for the n-type doped Cs2SnI2Cl2and Cs2PbI2Cl2monolayers are about 1.05 and 0.32 at the optimized carrier concentrations 5.42 × 1012cm-2and 9.84 × 1012cm-2. Moreover, when spin-orbit coupling is considered, the correspondingZTvalues are enhanced to 2.73 and 1.98 at 5.27 × 1011cm-2and 6.16 × 1011cm-2. These results signify that Cs2SnI2Cl2and Cs2PbI2Cl2monolayers are promising thermoelectric candidates.
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Affiliation(s)
- Jiajia Fei
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, Hunan, People's Republic of China
| | - Xiaojiao Zhang
- School of Microelectronics and Physics, Hunan University of Technology and Business, Changsha 410205, People's Republic of China
| | - Jialin Li
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, Hunan, People's Republic of China
| | - Mingming Li
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, Hunan, People's Republic of China
| | - Mengqiu Long
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, Hunan, People's Republic of China
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25
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Fu J, Ramesh S, Melvin Lim JW, Sum TC. Carriers, Quasi-particles, and Collective Excitations in Halide Perovskites. Chem Rev 2023. [PMID: 37276018 DOI: 10.1021/acs.chemrev.2c00843] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Halide perovskites (HPs) are potential game-changing materials for a broad spectrum of optoelectronic applications ranging from photovoltaics, light-emitting devices, lasers to radiation detectors, ferroelectrics, thermoelectrics, etc. Underpinning this spectacular expansion is their fascinating photophysics involving a complex interplay of carrier, lattice, and quasi-particle interactions spanning several temporal orders that give rise to their remarkable optical and electronic properties. Herein, we critically examine and distill their dynamical behavior, collective interactions, and underlying mechanisms in conjunction with the experimental approaches. This review aims to provide a unified photophysical picture fundamental to understanding the outstanding light-harvesting and light-emitting properties of HPs. The hotbed of carrier and quasi-particle interactions uncovered in HPs underscores the critical role of ultrafast spectroscopy and fundamental photophysics studies in advancing perovskite optoelectronics.
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Affiliation(s)
- Jianhui Fu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Sankaran Ramesh
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Energy Research Institute @NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Jia Wei Melvin Lim
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Energy Research Institute @NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Tze Chien Sum
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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26
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Thakur S, Giri A. Origin of Ultralow Thermal Conductivity in Metal Halide Perovskites. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37235795 DOI: 10.1021/acsami.3c03499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Resulting from their remarkable structure-property relationships, metal halide perovskites have garnered tremendous attention in recent years for a plethora of applications. For instance, their ultralow thermal conductivities make them promising candidates for thermoelectric and thermal barrier coating applications. It is widely accepted that the "guest" cations inside the metal halide framework act as "rattlers", which gives rise to strong intrinsic phonon resistances, thus explaining the structure-property relationship dictating their ultralow thermal conductivities. In contrast, through systematic atomistic simulations, we show that this conventionally accepted "rattling" behavior is not the mechanism dictating the ultralow thermal conductivities in metal halide perovskites. Instead, we show that the ultralow thermal conductivities in these materials mainly originate from the strongly anharmonic and mechanically soft metal halide framework. By comparing the thermal transport properties of the prototypical fully inorganic CsPbI3 and an empty PbI6 framework, we show that the addition of Cs+ ions inside the nanocages leads to an enhancement in thermal conductivity through vibrational hardening of the framework. Our extensive spectral energy density calculations show that the Cs+ ions have well-defined phase relations with the lattice dynamics of the "host" framework resulting in additional pathways for heat conduction, which is in disagreement with the description of the individual "rattling" of guests inside the framework that has been widely assumed to dictate their ultralow thermal conductivities. Furthermore, we show that an efficient strategy to control the heat transfer efficacy in these materials is through the manipulation of the framework anharmonicity achieved via strain and octahedral tilting. Our work provides the fundamental insights into the lattice dynamics that dictate heat transfer in these novel materials, which will ultimately help guide their further advancement in the next-generation of electronics such as in thermoelectric and photovoltaic applications.
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Affiliation(s)
- Sandip Thakur
- Department of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, Rhode Island 02881, United States
| | - Ashutosh Giri
- Department of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, Rhode Island 02881, United States
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27
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Zhou M, Liu L, Liu J, Mei Z. Prediction and Control of Thermal Transport at Defective State Gr/ h-BN Heterojunction Interfaces. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091462. [PMID: 37177007 PMCID: PMC10179821 DOI: 10.3390/nano13091462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2023] [Revised: 03/22/2023] [Accepted: 03/28/2023] [Indexed: 05/15/2023]
Abstract
The control of interfacial thermal conductivity is the key to two-dimensional heterojunction in semiconductor devices. In this paper, by using non-equilibrium molecular dynamics (NEMD) simulations, we analyze the regulation of interfacial thermal energy transport in graphene (Gr)/hexagonal boron nitride (h-BN) heterojunctions and reveal the variation mechanism of interfacial thermal energy transport. The calculated results show that 2.16% atomic doping can effectively improve interfacial heat transport by more than 15.6%, which is attributed to the enhanced phonon coupling in the mid-frequency region (15-25 THz). The single vacancy in both N and B atoms can significantly reduce the interfacial thermal conductivity (ITC), and the ITC decreases linearly with the increase in vacancy defect concentration, mainly due to the single vacancy defects leading to an increased phonon participation rate (PPR) below 0.4 in the low-frequency region (0-13 THz), which shows the phonon the localization feature, which hinders the interfacial heat transport. Finally, a BP neural network algorithm is constructed using machine learning to achieve fast prediction of the ITC of Gr/h-BN two-dimensional heterogeneous structures, and the results show that the prediction error of the model is less than 2%, and the method will provide guidance and reference for the design and optimization of the ITC of more complex defect-state heterogeneous structures.
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Affiliation(s)
- Mingjian Zhou
- School of Mechanical Engineering, Chaohu University, Chaohu 238000, China
| | - Liqing Liu
- School of Mechanical Engineering, Chaohu University, Chaohu 238000, China
| | - Jiahao Liu
- School of Mechanical Engineering, Chaohu University, Chaohu 238000, China
| | - Zihang Mei
- School of Mechanical Engineering, Chaohu University, Chaohu 238000, China
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28
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Kim T, Park S, Iyer V, Shaheen B, Choudhry U, Jiang Q, Eichman G, Gnabasik R, Kelley K, Lawrie B, Zhu K, Liao B. Mapping the pathways of photo-induced ion migration in organic-inorganic hybrid halide perovskites. Nat Commun 2023; 14:1846. [PMID: 37012242 PMCID: PMC10070404 DOI: 10.1038/s41467-023-37486-w] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Accepted: 03/20/2023] [Indexed: 04/05/2023] Open
Abstract
Organic-inorganic hybrid perovskites exhibiting exceptional photovoltaic and optoelectronic properties are of fundamental and practical interest, owing to their tunability and low manufacturing cost. For practical applications, however, challenges such as material instability and the photocurrent hysteresis occurring in perovskite solar cells under light exposure need to be understood and addressed. While extensive investigations have suggested that ion migration is a plausible origin of these detrimental effects, detailed understanding of the ion migration pathways remains elusive. Here, we report the characterization of photo-induced ion migration in perovskites using in situ laser illumination inside a scanning electron microscope, coupled with secondary electron imaging, energy-dispersive X-ray spectroscopy and cathodoluminescence with varying primary electron energies. Using methylammonium lead iodide and formamidinium lead iodide as model systems, we observed photo-induced long-range migration of halide ions over hundreds of micrometers and elucidated the transport pathways of various ions both near the surface and inside the bulk of the samples, including a surprising finding of the vertical migration of lead ions. Our study provides insights into ion migration processes in perovskites that can aid perovskite material design and processing in future applications.
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Affiliation(s)
- Taeyong Kim
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
- Department of Mechanical Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Soyeon Park
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Vasudevan Iyer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Basamat Shaheen
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Usama Choudhry
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Qi Jiang
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Gage Eichman
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Ryan Gnabasik
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Kyle Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Benjamin Lawrie
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA.
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA.
| | - Kai Zhu
- National Renewable Energy Laboratory, Golden, CO, 80401, USA.
| | - Bolin Liao
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA.
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29
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Alhashmi A, Kanoun MB, Goumri-Said S. Machine Learning for Halide Perovskite Materials ABX 3 (B = Pb, X = I, Br, Cl) Assessment of Structural Properties and Band Gap Engineering for Solar Energy. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2657. [PMID: 37048955 PMCID: PMC10095675 DOI: 10.3390/ma16072657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Revised: 03/15/2023] [Accepted: 03/20/2023] [Indexed: 06/19/2023]
Abstract
The exact control of material properties essential for solar applications has been made possible because of perovskites' compositional engineering. However, tackling efficiency, stability, and toxicity at the same time is still a difficulty. Mixed lead-free and inorganic perovskites have lately shown promise in addressing these problems, but their composition space is vast, making it challenging to find good candidates even with high-throughput approaches. We investigated two groups of halide perovskite compound data with the ABX3 formula to investigate the formation energy data for 81 compounds. The structural stability was analyzed over 63 compounds. For these perovskites, we used new library data extracted from a calculation using generalized-gradient approximation within the Perdew-Burke-Ernzerhof (PBE) functional established on density functional theory. As a second step, we built machine learning models, based on a kernel-based naive Bayes algorithm that anticipate a variety of target characteristics, including the mixing enthalpy, different octahedral distortions, and band gap calculations. In addition to laying the groundwork for observing new perovskites that go beyond currently available technical uses, this work creates a framework for finding and optimizing perovskites in a photovoltaic application.
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Affiliation(s)
- Afnan Alhashmi
- Department of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa 31982, Saudi Arabia
| | - Mohammed Benali Kanoun
- Department of Mathematics and Sciences, College of Humanities and Sciences, Prince Sultan University, P.O. Box 66833, Riyadh 11586, Saudi Arabia;
| | - Souraya Goumri-Said
- Physics Department, Colleges of Science and General Studies, Alfaisal University, P.O. Box 50927, Riyadh 11533, Saudi Arabia
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30
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You Q, Gu S, Gou X. The Highly Accurate Interatomic Potential of CsPbBr 3 Perovskite with Temperature Dependence on the Structure and Thermal Properties. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2043. [PMID: 36903156 PMCID: PMC10004010 DOI: 10.3390/ma16052043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/30/2023] [Revised: 02/23/2023] [Accepted: 02/28/2023] [Indexed: 06/18/2023]
Abstract
CsPbBr3 perovskite has excellent optoelectronic properties and many important application prospects in solar cells, photodetectors, high-energy radiation detectors and other fields. For this kind of perovskite structure, to theoretically predict its macroscopic properties through molecular dynamic (MD) simulations, a highly accurate interatomic potential is first necessary. In this article, a new classical interatomic potential for CsPbBr3 was developed within the framework of the bond-valence (BV) theory. The optimized parameters of the BV model were calculated through first-principle and intelligent optimization algorithms. Calculated lattice parameters and elastic constants for the isobaric-isothermal ensemble (NPT) by our model are in accordance with the experimental data within a reasonable error and have a higher accuracy than the traditional Born-Mayer (BM) model. In our potential model, the temperature dependence of CsPbBr3 structural properties, such as radial distribution functions and interatomic bond lengths, was calculated. Moreover, the temperature-driven phase transition was found, and the phase transition temperature was close to the experimental value. The thermal conductivities of different crystal phases were further calculated, which agreed with the experimental data. All these comparative studies proved that the proposed atomic bond potential is highly accurate, and thus, by using this interatomic potential, the structural stability and mechanical and thermal properties of pure inorganic halide and mixed halide perovskites can be effectively predicted.
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31
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Das A, Pal K, Acharyya P, Das S, Maji K, Biswas K. Strong Antibonding I (p)-Cu (d) States Lead to Intrinsically Low Thermal Conductivity in CuBiI 4. J Am Chem Soc 2023; 145:1349-1358. [PMID: 36595558 DOI: 10.1021/jacs.2c11908] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Chemical bonding present in crystalline solids has a significant impact on how heat moves through a lattice, and with the right chemical tuning, one can achieve extremely low thermal conductivity. The desire for intrinsically low lattice thermal conductivity (κlat) has gained widespread attention in thermoelectrics, in refractories, and nowadays in photovoltaics and optoelectronics. Here we have synthesized a high-quality crystalline ingot of cubic metal halide CuBiI4 and explored its chemical bonding and thermal transport properties. It exhibits an intrinsically ultralow κlat of ∼0.34-0.28 W m-1 K-1 in the temperature range 4-423 K with an Umklapp crystalline peak of 1.82 W m-1 K-1 at 20 K, which is surprisingly lower than other copper-based halide or chalcogenide materials. The crystal orbital Hamilton population analysis shows that antibonding states generated just below the Fermi level (Ef), which arise from robust copper 3d and iodine 5p interactions, cause copper-iodide bond weakening, which leads to reduction of the elastic moduli and softens the lattice, finally to produce extremely low κlat in CuBiI4. The chemical bonding hierarchy with mixed covalent and ionic interactions present in the complex crystal structure generates significant lattice anharmonicity and a low participation ratio in low-lying optical phonon modes originating mostly from localized copper-iodide bond vibrations. We have obtained experimental evidence of these low-lying modes by low-temperature specific heat capacity measurement as well as Raman spectroscopy. The presence of strong p-d antibonding interactions between copper and iodine leads to anharmonic soft crystal lattice which gives rise to low-energy localized optical phonon bands, suppressing the heat-carrying acoustic phonons to steer intrinsically ultralow κlat in CuBiI4.
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Affiliation(s)
- Anustoop Das
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore560064, India
| | - Koushik Pal
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Paribesh Acharyya
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore560064, India
| | - Subarna Das
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore560064, India
| | - Krishnendu Maji
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore560064, India
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore560064, India
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32
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Stanton R, Trivedi DJ. Atomistic Description of the Impact of Spacer Selection on Two-Dimensional (2D) Perovskites: A Case Study of 2D Ruddlesden-Popper CsPbI 3 Analogues. J Phys Chem Lett 2022; 13:12090-12098. [PMID: 36546657 DOI: 10.1021/acs.jpclett.2c03463] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Inorganic CsPbI3 perovskites have become desirable for use in photovoltaic devices due to their excellent optoelectronic properties and increased resilience to thermal degradation compared to organic-inorganic perovskites. An effective strategy for improving both the performance and the phase stability of CsPbI3-based perovskites is through introducing a diverse set of spacing cations separating inorganic layers in their two-dimensional (2D) analogues. In this work, CsPbI3-based 2D Ruddlesden-Popper perovskites were investigated using three aromatic spacers, 2-thiophenemethylamine (ThMA), 2-thiopheneformamidine (ThFA), and benzylammonium, fluorinated through para substitution (pFBA). Our findings highlight the importance of the local bonding environment between organic spacers and the PbI6 octahedra. Additionally, we demonstrated the importance of energetic alignment between electronic states on spacing cations and inorganic layers for optoelectronic applications. Furthermore, thermoelectric performance was investigated revealing a preference for p-type ThFA and n-type ThMA and pFBA configurations.
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Affiliation(s)
- Robert Stanton
- Department of Physics, Clarkson University, Potsdam, New York 13699, United States
| | - Dhara J Trivedi
- Department of Physics, Clarkson University, Potsdam, New York 13699, United States
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Miura YF, Akagi Y, Hishida D, Takeoka Y. Two-Dimensional Layered Organic-Inorganic Hybrid Perovskite Thin-Film Fabrication by Langmuir-Blodgett and Intercalation Techniques. ACS OMEGA 2022; 7:47812-47820. [PMID: 36591147 PMCID: PMC9798391 DOI: 10.1021/acsomega.2c05626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Accepted: 11/17/2022] [Indexed: 06/17/2023]
Abstract
We demonstrate the formation of a well-organized thin film of two-dimensional (2D) layered (C18H37NH3)2PbI4 hybrid perovskite by immersing octadecyl amine (ODA) Langmuir-Blodgett (LB) films in an aqueous solution of PbI2/HI. The immersed films exhibit a sharp absorption band at 486 nm (2.55 eV), which is assigned to the excitonic absorption. The film exhibits a bright green emission under ultraviolet light at room temperature. The photoluminescence spectrum has a distinct peak at 497 nm (2.49 eV) and is a mirror image of the absorption spectrum. X-ray diffraction (XRD) analyses reveal that the film has a bilayer-like structure with a d-spacing of 6.4 nm, which is equal to that of a (C18H37NH3)2PbI4 perovskite single crystal with a quantum well (QW) structure. Only intense peaks of the (0 0 l) (l = 2, 4, 6, 8, 10, 12, 14, 16, 18, 20, 22, and 24) reflections are observed in the out-of-plane XRD pattern, indicating that the c axis is vertically oriented with respect to the substrate surface, and the orientational order is remarkably high. Fourier transform infrared spectroscopy reveals that the ODA molecules are protonated in the PbI2/HI solution. These results suggest that the nitrogen atoms of the ODA molecules in the film are protonated in the PbI2/HI solution, and then, inorganic layers of the PbI6 octahedra are intercalated in the alkyl ammonium film to neutralize the positive charge and form a QW structure. Fluorescence microscopy observation reveals that the 2D layered (C18H37NH3)2PbI4 film has a relatively uniform surface, reflecting the well-organized layered structure of the base material (ODA LB film). Because the intercalation process can be applied to various metal cations and halogen anions, we believe that the proposed technique will aid in the development of highly efficient 2D layered organic-inorganic hybrid perovskite materials.
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Affiliation(s)
- Yasuhiro F. Miura
- Department
of Physics, Hamamatsu University School
of Medicine, Hamamatsu, Shizuoka 431-3192, Japan
| | - Yoshiya Akagi
- Department
of Physics, Hamamatsu University School
of Medicine, Hamamatsu, Shizuoka 431-3192, Japan
| | - Daizo Hishida
- Department
of Materials & Life Sciences, Faculty of Science and Engineering, Sophia University, Tokyo 102-8554, Japan
| | - Yuko Takeoka
- Department
of Materials & Life Sciences, Faculty of Science and Engineering, Sophia University, Tokyo 102-8554, Japan
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Bhumla P, Jain M, Sheoran S, Bhattacharya S. Vacancy-Ordered Double Perovskites Cs 2BI 6 (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials. J Phys Chem Lett 2022; 13:11655-11662. [PMID: 36503226 DOI: 10.1021/acs.jpclett.2c02852] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Vacancy-ordered double perovskites (A2BX6), being one of the environmentally friendly and stable alternatives to lead halide perovskites, have garnered considerable research attention in the scientific community. However, their thermal transport has not been explored much, despite their potential applications. Here, we explore Cs2BI6 (B = Pt, Pd, Te, Sn) as potential thermoelectric materials using state-of-the-art first-principles-based methodologies, viz., density functional theory combined with many-body perturbation theory (G0W0) and spin-orbit coupling. The absence of polyhedral connectivity in vacancy-ordered perovskites gives rise to additional degrees of freedom, leading to lattice anharmonicity. The presence of anharmonic lattice dynamics leads to strong electron-phonon coupling, which is well-captured by the Fröhlich mesoscopic model. The lattice anharmonicity is further studied using ab initio molecular dynamics and the electron localization function. The maximum anharmonicity is observed in Cs2PtI6, followed by Cs2PdI6, Cs2TeI6, and Cs2SnI6. Also, the computed average thermoelectric figure of merit (zT) for Cs2PtI6, Cs2PdI6, Cs2TeI6, and Cs2SnI6 is 0.88, 0.85, 0.95, and 0.78, respectively, which reveals their promising renewable energy applications.
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Affiliation(s)
- Preeti Bhumla
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Manjari Jain
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Sajjan Sheoran
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Saswata Bhattacharya
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
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A universal all-solid synthesis for high throughput production of halide perovskite. Nat Commun 2022; 13:7399. [PMID: 36456593 PMCID: PMC9715688 DOI: 10.1038/s41467-022-35122-7] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Accepted: 11/18/2022] [Indexed: 12/04/2022] Open
Abstract
Halide perovskites show ubiquitous presences in growing fields at both fundamental and applied levels. Discovery, investigation, and application of innovative perovskites are heavily dependent on the synthetic methodology in terms of time-/yield-/effort-/energy- efficiency. Conventional wet chemistry method provides the easiness for growing thin film samples, but represents as an inefficient way for bulk crystal synthesis. To overcome these, here we report a universal solid state-based route for synthesizing high-quality perovskites, by means of simultaneously applying both electric and mechanical stress fields during the synthesis, i.e., the electrical and mechanical field-assisted sintering technique. We employ various perovskite compositions and arbitrary geometric designs for demonstration in this report, and establish such synthetic route with uniqueness of ultrahigh yield, fast processing and solvent-free nature, along with bulk products of exceptional quality approaching to single crystals. We exemplify the applications of the as-synthesized perovskites in photodetection and thermoelectric as well as other potentials to open extra chapters for future technical development.
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36
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Liu Y, Chen PA, Qiu X, Guo J, Xia J, Wei H, Xie H, Hou S, He M, Wang X, Zeng Z, Jiang L, Liao L, Hu Y. Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI 4 for field-effect transistors and thermoelectric devices. STAR Protoc 2022; 3:101876. [PMID: 36595949 PMCID: PMC9679674 DOI: 10.1016/j.xpro.2022.101876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Revised: 10/18/2022] [Accepted: 11/01/2022] [Indexed: 11/21/2022] Open
Abstract
Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. We detail steps for preparation of field-effect transistors (FETs) and thermoelectric devices (TEs) based on SnI4-doped (PEA)2SnI4 films. We further describe characterization via conductivity measurement using the four-point probe method, FETs performance, and TEs performance measurements. For complete details on the use and execution of this protocol, please refer to Liu et al. (2022).1.
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Affiliation(s)
- Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China,Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Ping-An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huan Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Haihong Xie
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Shijin Hou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Mai He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China,Corresponding author
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China,Shenzhen Research Institute of Hunan University, Shenzhen 518063, China,Corresponding author
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Baranwal AK, Hayase S. Recent Advancements in Tin Halide Perovskite-Based Solar Cells and Thermoelectric Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4055. [PMID: 36432341 PMCID: PMC9694716 DOI: 10.3390/nano12224055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 11/10/2022] [Accepted: 11/14/2022] [Indexed: 06/16/2023]
Abstract
The excellent optoelectronic properties of tin halide perovskites (Sn-PVKs) have made them a promising candidate for replacing toxic Pb counterparts. Concurrently, their enormous potential in photon harvesting and thermoelectricity applications has attracted increasing attention. The optoelectronic properties of Sn-PVKs are governed by the flexible nature of SnI6 octahedra, and they exhibit extremely low thermal conductivity. Due to these diverse applications, this review first analyzes the structural properties, optoelectronic properties, defect physics, and thermoelectric properties of Sn-PVKs. Then, recent techniques developed to solve limitations with Sn-PVK-based devices to improve their photoelectric and thermoelectric performance are discussed in detail. Finally, the challenges and prospects for further development of Sn-PVK-based devices are discussed.
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Tadano T, Saidi WA. First-Principles Phonon Quasiparticle Theory Applied to a Strongly Anharmonic Halide Perovskite. PHYSICAL REVIEW LETTERS 2022; 129:185901. [PMID: 36374693 DOI: 10.1103/physrevlett.129.185901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2022] [Accepted: 09/19/2022] [Indexed: 06/16/2023]
Abstract
Understanding and predicting lattice dynamics in strongly anharmonic crystals is one of the long-standing challenges in condensed matter physics. Here, we propose a first-principles method that gives accurate quasiparticle (QP) peaks of the phonon spectrum with strong anharmonic broadening. On top of the conventional first-order self-consistent phonon (SC1) dynamical matrix, the proposed method incorporates frequency renormalization effects by the bubble self-energy within the QP approximation. We apply the developed methodology to the strongly anharmonic α-CsPbBr_{3} that displays phonon instability within the harmonic approximation in the whole Brillouin zone. While the SC1 theory significantly underestimates the cubic-to-tetragonal phase transition temperature (T_{c}) by more than 50%, we show that our approach yields T_{c}=404-423 K, in excellent agreement with the experimental value of 403 K. We also demonstrate that an accurate determination of QP peaks is paramount for quantitative prediction and elucidation of the phonon linewidth.
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Affiliation(s)
- Terumasa Tadano
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Tsukuba 305-0047, Japan
| | - Wissam A Saidi
- National Energy Technology Laboratory, United States Department of Energy, Pittsburgh, Pennsylvania 15236, USA and Department of Mechanical Engineering and Materials Science (MEMS), University of Pittsburgh, Pittsburgh, Pennsylvania 15261, USA
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39
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Liang SY, Liu YF, Zhang HJ, Ji ZK, Xia H. High-Quality Patterning of CsPbBr 3 Perovskite Films through Lamination-Assisted Femtosecond Laser Ablation toward Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46958-46963. [PMID: 36094822 DOI: 10.1021/acsami.2c11870] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Metal halide perovskites have exhibited promising potential for practical applications such as image sensors and displays benefiting from their outstanding optoelectronic properties. However, owing to the instability of the perovskite materials, producing patterned perovskite films with adequately high quality and high precision for such practical applications poses a challenge for existing patterning methods. Herein, the lamination-assisted femtosecond laser ablation (LA-FsLA) technique was successfully applied to fabricate patterned CsPbBr3 films with sufficiently high quality and high precision. A sandwich-laminated structure (glass/CsPbBr3/glass) was introduced to avoid the impact of debris on the patterned perovskite film. As a result, arbitrarily patterned perovskite films with high quality, submicron precision, and well-defined edges were successfully prepared. Moreover, the light-emitting diodes (LEDs) based on the patterned perovskite films also exhibit good emission characteristics. This work provides a promising strategy for the fabrication of patterned perovskite films with adequately high quality and high precision toward perovskite-based optoelectronic devices.
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Affiliation(s)
- Shu-Yu Liang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Yue-Feng Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Hai-Jing Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Zhi-Kun Ji
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Hong Xia
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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40
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Cao P, Zheng H, Wu P. Multicolor ultralong phosphorescence from perovskite-like octahedral α-AlF 3. Nat Commun 2022; 13:5712. [PMID: 36175437 PMCID: PMC9522726 DOI: 10.1038/s41467-022-33540-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2021] [Accepted: 09/22/2022] [Indexed: 11/29/2022] Open
Abstract
Designing organic fluorescent and phosphorescent materials based on various core fluorophore has gained great attention, but it is unclear whether similar luminescent units exist for inorganic materials. Inspired by the BX6 octahedral structure of luminescent metal halide perovskites (MHP), here we propose that the BX6 octahedron may be a core structure for luminescent inorganic materials. In this regard, excitation-dependent color-tunable phosphorescence is discovered from α-AlF3 featuring AlF6 octahedron. Through further exploration of the BX6 unit by altering the dimension and changing the center metal (B) and ligand (X), luminescence from KAlF4, (NH4)3AlF6, AlCl3, Al(OH)3, Ga2O3, InCl3, and CdCl2 are also discovered. The phosphorescence of α-AlF3 can be ascribed to clusterization-triggered emission, i.e., weak through space interaction of the n electrons of F atoms bring close proximity in the AlF6 octahedra (inter/intra). These discoveries will deepen the understanding and contribute to further development of BX6 octahedron-based luminescent materials. Unravelling the origin of emission in luminescent inorganic materials is challenging. Here, the authors report that AlF6 octahedrons exhibit excitation-dependent color-tunable phosphorescence; structurally related compounds are also luminescent.
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Affiliation(s)
- Peisheng Cao
- College of Chemistry, Sichuan University, Chengdu, 610064, China
| | - Haoyue Zheng
- Analytical & Testing Center, Sichuan University, Chengdu, 610064, China
| | - Peng Wu
- College of Chemistry, Sichuan University, Chengdu, 610064, China. .,Analytical & Testing Center, Sichuan University, Chengdu, 610064, China.
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41
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Kagdada HL, Materny A, Singh DK. Decreasing toxicity and increasing photoconversion efficiency by Sn-substitution of Pb in 5-ammonium valeric acid-based two-dimensional hybrid perovskite materials. Phys Chem Chem Phys 2022; 24:23226-23235. [PMID: 36129315 DOI: 10.1039/d2cp02997a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The toxicity of Pb in halide-based hybrid perovskite materials stands in the way of their more extensive use, despite their excellent optical properties, high stability and very good photoconversion efficiency. The presented work focuses on addressing the toxicity issues in 2D perovskites. We use 5-ammonium valeric acid (AVA) as an organic spacer and partially or completely eliminate Pb by Sn and apply first principles-based density functional theory (DFT) calculations to determine the properties of these systems. Structural insights are gained, which predict the major changes in the inorganic framework including the metal-halide bond length and the bridging angle between two octahedral configurations. The replacement of Pb by Sn leads to a drastic reduction of the electronic band gap from 1.84 to 1.04 eV. Increasing the Sn content results in Sn-I bonds being stronger than the Pb-I bonds, which entails strong s-p coupling. The calculated effective masses of excitons decrease by up to ∼23% in the case of lead-free perovskites, which can be attributed to the more dispersive band edges due to stronger s-p coupling. The reduction of the effective masses of the charge carriers and the electronic band gap results in high electrical conductivity for the AVA2(MA)Sn2I7 2D perovskite structure. The three structures compared, where AVA2(MA)XI7 (X = Pb2, PbSn, Sn2) exhibit excellent thermoelectric power factors, which suggests promising applications for heat energy conversion. Moving toward lead-free 2D perovskites, the real part of the dielectric constants enhances, which may limit the radiative recombination of charge carriers. Furthermore, reducing the bandgap values by the substitution of Sn results in a red-shift in the edge of the absorption coefficients. Using the spectroscopic limited maximum efficiency (SLME) model, the best efficiencies of 32.20 and 30.08% are achieved for the AVA2(MA)PbSnI7 and AVA2(MA)Sn2I7 structures. The comparison of all three structures demonstrates that lead-free 2D perovskites are very good candidates for highly efficient solar energy conversion.
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Affiliation(s)
- Hardik L Kagdada
- Department of Basic Sciences, Institute of Infrastructure Technology Research And Management (IITRAM), Ahmedabad 380026, India.
| | - Arnulf Materny
- Physics and Earth Sciences, Jacobs University Bremen, 28759 Bremen, Germany
| | - Dheeraj K Singh
- Department of Basic Sciences, Institute of Infrastructure Technology Research And Management (IITRAM), Ahmedabad 380026, India.
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Fu J, Xu Q, Abdelwahab I, Cai R, Febriansyah B, Yin T, Loh KP, Mathews N, Sun H, Sum TC. Strain propagation in layered two-dimensional halide perovskites. SCIENCE ADVANCES 2022; 8:eabq1971. [PMID: 36112683 PMCID: PMC9481117 DOI: 10.1126/sciadv.abq1971] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Impulsive light excitation presents a powerful tool for investigating the interdependent structural and electronic responses in layered two-dimensional (2D) halide perovskites. However, detailed understanding of the nonlinear lattice dynamics in these soft hybrid materials remains limited. Here, we explicate the intrinsic strain propagation mechanisms in 2D perovskite single crystals using transient reflection spectroscopy. Ultrafast photoexcitation leads to the generation of strain pulses via thermoelastic (TE) stress and deformation potential (DP) interaction whence their detection proceed via Brillouin scattering. Using a two-temperature model together with strain wave propagation, we discern the TE and DP contributions in strain generation. Hot carrier cooling plays a dominant role in effecting the weak modulation amplitude. Out-of-plane lattice stiffness is reduced by the weak van der Waals bond between organic layers, resulting in a slow strain propagation velocity. Our findings inject fresh insights into the basic strain properties of layered perovskites critical for manipulating their functional properties for new applications.
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Affiliation(s)
- Jianhui Fu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Qiang Xu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Ibrahim Abdelwahab
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Rui Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Benny Febriansyah
- Energy Research Institute @NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Tingting Yin
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Nripan Mathews
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Handong Sun
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Tze Chien Sum
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Corresponding author.
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Glassy thermal conductivity in Cs 3Bi 2I 6Cl 3 single crystal. Nat Commun 2022; 13:5053. [PMID: 36030224 PMCID: PMC9420152 DOI: 10.1038/s41467-022-32773-4] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2022] [Accepted: 08/15/2022] [Indexed: 11/30/2022] Open
Abstract
As the periodic atomic arrangement of a crystal is made to a disorder or glassy-amorphous system by destroying the long-range order, lattice thermal conductivity, κL, decreases, and its fundamental characteristics changes. The realization of ultralow and unusual glass-like κL in a crystalline material is challenging but crucial to many applications like thermoelectrics and thermal barrier coatings. Herein, we demonstrate an ultralow (~0.20 W/m·K at room temperature) and glass-like temperature dependence (2–400 K) of κL in a single crystal of layered halide perovskite, Cs3Bi2I6Cl3. Acoustic phonons with low cut-off frequency (20 cm−1) are responsible for the low sound velocity in Cs3Bi2I6Cl3 and make the structure elastically soft. While a strong anharmonicity originates from the low energy and localized rattling-like vibration of Cs atoms, synchrotron X-ray pair-distribution function evidence a local structural distortion in the Bi-halide octahedra and Cl vacancy. The hierarchical chemical bonding and soft vibrations from selective sublattice leading to low κL is intriguing from lattice dynamical perspective as well as have potential applications. The investigation of thermal conductivity is crucial to the success of many modern technologies. Here the authors have reported an unusual glass-like thermal conductivity in a single crystal of layered halide perovskite, Cs3Bi2I6Cl3.
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Muscarella L, Cordaro A, Krause G, Pal D, Grimaldi G, Antony LSD, Langhorst D, Callies A, Bläsi B, Höhn O, Koenderink AF, Polman A, Ehrler B. Nanopatterning of Perovskite Thin Films for Enhanced and Directional Light Emission. ACS APPLIED MATERIALS & INTERFACES 2022; 14:38067-38076. [PMID: 35943781 PMCID: PMC9412957 DOI: 10.1021/acsami.2c09643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Accepted: 07/28/2022] [Indexed: 06/15/2023]
Abstract
Lead-halide perovskites offer excellent properties for lighting and display applications. Nanopatterning perovskite films could enable perovskite-based devices with designer properties, increasing their performance and adding novel functionalities. We demonstrate the potential of nanopatterning for achieving light emission of a perovskite film into a specific angular range by introducing periodic sol-gel structures between the injection and emissive layer by using substrate conformal imprint lithography (SCIL). Structural and optical characterization reveals that the emission is funnelled into a well-defined angular range by optical resonances, while the emission wavelength and the structural properties of the perovskite film are preserved. The results demonstrate a flexible and scalable approach to the patterning of perovskite layers, paving the way toward perovskite LEDs with designer angular emission patterns.
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Affiliation(s)
- Loreta
A. Muscarella
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
- Department
of Chemistry, Utrecht University, Princetonlaan 8, 3584 CB Utrecht, The Netherlands
| | - Andrea Cordaro
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
- Institute
of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Georg Krause
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - Debapriya Pal
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - Gianluca Grimaldi
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
- Cavendish
Laboratory, Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | | | - David Langhorst
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - Adrian Callies
- Fraunhofer
Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - Benedikt Bläsi
- Fraunhofer
Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - Oliver Höhn
- Fraunhofer
Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - A. Femius Koenderink
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
- Institute
of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Albert Polman
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - Bruno Ehrler
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
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45
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Sebastia-Luna P, Pokharel U, Huisman BAH, Koster LJA, Palazon F, Bolink HJ. Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties. ACS APPLIED ENERGY MATERIALS 2022; 5:10216-10223. [PMID: 36034760 PMCID: PMC9400028 DOI: 10.1021/acsaem.2c01936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 07/18/2022] [Indexed: 06/15/2023]
Abstract
Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs2SnI4, is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI3 (B-β CsSnI3) by annealing at 150 °C. B-β CsSnI3 is a p-type semiconductor with a figure of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100 °C, which makes it a promising candidate to power small electronic devices such as wearable sensors which may be interconnected in the so-called Internet of Things. The B-β phase is stable in nitrogen, whereas it spontaneously oxidizes to Cs2SnI6 upon exposure to air. Cs2SnI6 shows a negative Seebeck coefficient and an ultralow thermal conductivity. However, the ZT values are 1 order of magnitude lower than for B-β CsSnI3 due to a considerably lower electrical conductivity.
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Affiliation(s)
- Paz Sebastia-Luna
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
| | - Unnati Pokharel
- Zernike
Institute for Advanced Materials, University
of Groningen, 9747 AG Groningen, The Netherlands
| | - Bas A. H. Huisman
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
| | - L. Jan Anton Koster
- Zernike
Institute for Advanced Materials, University
of Groningen, 9747 AG Groningen, The Netherlands
| | - Francisco Palazon
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
- Departamento
de Ingeniería Química y Ambiental, Universidad Politécnica de Cartagena, 30202 Cartagena, Spain
| | - Henk J. Bolink
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
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46
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Zhao F, Ren A, Li P, Li Y, Wu J, Wang ZM. Toward Continuous-Wave Pumped Metal Halide Perovskite Lasers: Strategies and Challenges. ACS NANO 2022; 16:7116-7143. [PMID: 35511058 DOI: 10.1021/acsnano.1c11539] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Reliable and efficient continuous-wave (CW) lasers have been intensively pursued in the field of optoelectronic integrated circuits. Metal perovskites have emerged as promising gain materials for solution-processed laser diodes. Recently, the performance of CW perovskite lasers has been improved with the optimization of material and device levels. Nevertheless, the realization of CW pumped perovskite lasers is still hampered by thermal runaway, unwanted parasitic species, and poor long-term stability. This review starts with the charge carrier recombination dynamics and fundamentals of CW lasing in perovskites. We examine the potential strategies that can be used to improve the performance of perovskite CW lasers from the materials to device levels. We also propose the open challenges and future opportunities in developing high-performance and stable CW pumped perovskite lasers.
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Affiliation(s)
- Feiyun Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Aobo Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Peihang Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Yan Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
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47
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Liu Y, Chen PA, Qiu X, Guo J, Xia J, Wei H, Xie H, Hou S, He M, Wang X, Zeng Z, Jiang L, Liao L, Hu Y. Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices. iScience 2022; 25:104109. [PMID: 35402868 PMCID: PMC8983347 DOI: 10.1016/j.isci.2022.104109] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 02/25/2022] [Accepted: 03/14/2022] [Indexed: 11/15/2022] Open
Abstract
Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. It is observed that Sn4+ produces p-doping effect on the perovskite, which increases the electrical conductivity by 105 times. The dopant SnI4 is also found to improve the film morphology of (PEA)2SnI4, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)2SnI4 field-effect transistors from 0.25 to 0.68 cm2 V-1 s-1 thanks to reduced trapping effects in the doped devices. Moreover, the doping technique enables the characterization and improvement of the thermoelectric performance of (PEA)2SnI4 films, which show a high power factor of 3.92 μW m-1 K-2 at doping ratio of 5 mol %.
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Affiliation(s)
- Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Ping-An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huan Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Haihong Xie
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Shijin Hou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Mai He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
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48
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Abia C, López CA, Gainza J, Rodrigues JEFS, Ferrer MM, Dalenogare G, Nemes NM, Dura OJ, Martínez JL, Fernández-Díaz MT, Álvarez-Galván C, Alonso JA. Detailed Structural Features of the Perovskite-Related Halide RbPbI 3 for Solar Cell Applications. Inorg Chem 2022; 61:5502-5511. [PMID: 35344352 PMCID: PMC9006220 DOI: 10.1021/acs.inorgchem.1c03841] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
All-inorganic lead halide perovskites like CsPbBr3, CsPbI3, or RbPbI3 are good replacements for the classical hybrid organic-inorganic perovskites like CH3NH3PbI3, susceptible to fast degradation in the presence of humid air. They also exhibit outstanding light absorption properties suitable for solar energy applications. Here, we describe the synthesis of RbPbI3 by mechanochemical procedures with green credentials, avoiding toxic or expensive organic solvents; this specimen exhibits excellent crystallinity. We report neutron powder diffraction data, essential to revisit some subtle structural features around room temperature (200-400 K). In all these regimes, the orthorhombic Pnma crystal structure is characterized by the presence along the b direction of the crystal of double rows of edge-sharing PbI6 octahedra. The lone electron pairs of Pb2+ ions have a strong stereochemical effect on the PbI6 octahedral distortion. The relative covalency of Rb-I versus Pb-I bonds shows that the Pb-I-related motions are more rigid than Rb-I-related vibrations, as seen in the Debye temperatures from the evolution of the anisotropic displacements. The optical gap, measured by diffuse reflectance UV-vis spectroscopy, is ∼2.51 eV and agrees well with ab initio calculations. The thermoelectric Seebeck coefficient is 3 orders of magnitude larger than that of other halide perovskites, with a value of ∼117,000 μV·K-1 at 460 K.
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Affiliation(s)
- Carmen Abia
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid 28049, Spain.,Institut Laue Langevin, BP 156X, Grenoble F-38042, France
| | - Carlos A López
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid 28049, Spain.,Instituto de Investigaciones en Tecnología Química (UNSL-CONICET) and Facultad de Química, Bioquímica y Farmacia, Almirante Brown 1455, San Luis 5700, Argentina
| | - Javier Gainza
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid 28049, Spain
| | - João Elias F S Rodrigues
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid 28049, Spain.,European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, Grenoble 38000, France
| | - Mateus M Ferrer
- CCAF, PPGCEM/CDTec, Federal University of Pelotas, Pelotas 96010-610, Rio Grande do Sul, Brazil
| | - Gustavo Dalenogare
- CCAF, PPGCEM/CDTec, Federal University of Pelotas, Pelotas 96010-610, Rio Grande do Sul, Brazil
| | - Norbert M Nemes
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid 28049, Spain.,Departamento de Física de Materiales, Universidad Complutense de Madrid, Madrid E-28040, Spain
| | - Oscar J Dura
- Departamento de Física Aplicada, Universidad de Castilla-La Mancha, Ciudad Real E-13071, Spain
| | - José L Martínez
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid 28049, Spain
| | | | | | - José A Alonso
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid 28049, Spain
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49
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Chen R, Yan Y, Tang J, Zeng H, Yao Q, Chen L, Liang Z. Efficient p‐Type Doping of Tin Halide Perovskite via Sequential Diffusion for Thermoelectrics. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200004] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022] Open
Affiliation(s)
- Ruisi Chen
- Department of Materials Science Fudan University Shanghai 200433 China
| | - Yajie Yan
- Department of Materials Science Fudan University Shanghai 200433 China
| | - Junhui Tang
- Department of Materials Science Fudan University Shanghai 200433 China
| | - Huarong Zeng
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China
| | - Qin Yao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China
| | - Lidong Chen
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China
| | - Ziqi Liang
- Department of Materials Science Fudan University Shanghai 200433 China
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50
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Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films. NANOMATERIALS 2022; 12:nano12050835. [PMID: 35269323 PMCID: PMC8912649 DOI: 10.3390/nano12050835] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Accepted: 02/24/2022] [Indexed: 11/16/2022]
Abstract
Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.
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