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Wu Y, Ji J, Ding Y, Yang J, Zhou L. Ultralow Lattice Thermal Conductivity and Large Glass-Like Contribution in Cs 3Bi 2I 6Cl 3: Rattling Atoms and p-Band Electrons Driven Dynamic Rotation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2406380. [PMID: 39291431 DOI: 10.1002/advs.202406380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Revised: 08/28/2024] [Indexed: 09/19/2024]
Abstract
Understanding the origin of ultralow lattice thermal conductivity κL of halide perovskites is of great significance in the energy conversion field. The soft phonon modes and the large anharmonicity corresponding to the dynamic rotation of halogen atoms play an important role in limiting the thermal transport of halide perovskites. The dynamic rotation has long been thought to originate from the electrostatic repulsion of lone pairs around halogen atoms. Here, by studying the layered perovskite Cs3Bi2I6Cl3, it is found that the interaction between the lone pairs contributed by the s bands of halogen atoms is short-range, and the dynamic rotation is really driven by the occupied p-band electrons. It dominates Cs3Bi2I6Cl3 with ultralow κL, < 0.2 W mK-1 at 300 K. Moreover, soft optical phonons are presented ≈1 and 2.2 THz that constitute relatively flat and dense bands due to the rattling Cs and Cl atoms, contributing a large glass-like component to the κL. The results have important implications for understanding the origin of the ultralow κL in halide perovskites and for designing novel perovskites to serve the energy conversion field.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology, Huzhou, Zhejiang, 313001, China
| | - Jialin Ji
- College of Biological, Chemical Sciences and Engineering, Jiaxing University, Jiaxing, Zhejiang, 314001, China
| | - Yimin Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology, Huzhou, Zhejiang, 313001, China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai, 200444, China
- Zhejiang Laboratory, Hangzhou, Zhejiang, 311100, China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology, Huzhou, Zhejiang, 313001, China
- School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu, Sichuan, 610054, China
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2
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Tassanov A, Lee H, Xia Y, Hodges JM. Layered NaBa 2M 3Q 3(Q 2) (M = Cu or Ag; Q = S or Se) Chalcogenides and Local Ordering in Their Mixed-Anion Compositions. Inorg Chem 2024; 63:15584-15591. [PMID: 39129205 DOI: 10.1021/acs.inorgchem.4c00534] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Three new NaBa2M3Q3(Q2) (M = Ag or Cu; Q = S or Se) chalcogenides were prepared by using solid-state methods and structurally characterized by using single-crystal X-ray diffraction. NaBa2Ag3Se3(Se2) and NaBa2Cu3Se3(Se2) crystallize in monoclinic space group C2/m and have a two-dimensional structure composed of edge-sharing MSe4/4 tetrahedra separated by Na+ and Ba2+ cations, along with (Se2)2- dimers at the center of the spacings between [M3Se3]3- slabs. NaBa2Ag3S3(S2) adopts a related structure with space group C2/m but has additional, crystallographically distinct Ag atoms in the [Ag3S3]3- layer that are linearly coordinated. NaBa2Ag3Se3(Se2) and NaBa2Ag3S3(S2) have indirect band gaps measured to be 1.2 and 1.9 eV, respectively, which is supported by band structures calculated using density functional theory. Mixed-anion NaBa2Cu3Se5-xSx compositions were prepared to probe the presence of anion ordering and heteronuclear (S-Se)2- dimers. Structural analyses of the sulfoselenides indicate that selenium preferentially occupies the Q-Q dimer sites, while Raman spectroscopy reveals a mixture of (S2), (Se2), and heteronuclear (S-Se) units in the sulfur-rich products. The local ordering of the chalcogens is rationalized using simple bonding concepts and adds to a growing framework for understanding ordering phenomena in mixed-anion systems.
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Affiliation(s)
- Ayat Tassanov
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Huiju Lee
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
| | - Yi Xia
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
| | - James M Hodges
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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3
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Sarkar A, Cerasoli FT, Viswanathan G, Donadio D, Kovnir K. ABa 6Cu 31Te 22 ( A = K, Rb, Cs) Featuring Polyanionic Copper-Telluride Frameworks with Ultralow Thermal Conductivity. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39613-39622. [PMID: 39012841 DOI: 10.1021/acsami.4c06694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2024]
Abstract
Three polyanionic tellurides, ABa6Cu31Te22 (A = K, Rb, Cs), were synthesized in salt flux. The isostructural tellurides crystallize in a new structure type, in the cubic Pa3 space group with a Wyckoff sequence of d10c2b1 and large unit cell volumes of over 5500 Å3. The structures feature a framework of [CuTe4] tetrahedra and [CuTe3] trigonal pyramids with disorder in the Cu sites. The polyanionic frameworks have large square antiprism and cuboctahedral voids where Ba and alkali metal cations are situated, forming [BaTe8] and [ATe12], respectively. The overall compositions are close to being charge balanced. The large [ATe12] cuboctahedra allowed for significant anisotropic displacement of the A cations, as observed from both single crystal X-ray diffraction and heat capacity studies. Alkali cations rattling together with Cu atom displacement and disorder leads to the dispersion of phonons, thus softening the lattice and subsequently reducing the thermal conductivity. Evaluations of the electronic band structure revealed the occurrence of a narrow bandgap together with the presence of a flat band near the valence band maximum, giving rise to the high thermopower. The Cs and Rb analogues show a slope change in the temperature dependence of electrical resistivity around room temperature, which is typical for semimetals or degenerate semiconductors. For the as-synthesized and unoptimized materials, high values of the thermoelectric figure-of-merit of ∼0.2 were observed at 623 K.
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Affiliation(s)
- Arka Sarkar
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa 50011, United States
| | - Frank T Cerasoli
- Department of Chemistry, University of California, Davis, California 95616, United States
| | - Gayatri Viswanathan
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa 50011, United States
| | - Davide Donadio
- Department of Chemistry, University of California, Davis, California 95616, United States
| | - Kirill Kovnir
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa 50011, United States
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4
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Cui J, Xie C, Hu W, Luo H, Mei Q, Li S, Xu W, Gao Z, Wu J, Zhang Q, Tang X, Tan G. Two-Dimensional-Like Phonons in Three-Dimensional-Structured Rhombohedral GeSe-Based Compounds with Excellent Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39656-39663. [PMID: 39031122 DOI: 10.1021/acsami.4c08186] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/22/2024]
Abstract
The coupling of charge and phonon transport in solids is a long-standing issue for thermoelectric performance enhancement. Herein, two new narrow-gap semiconductors with the same chemical formula of GeSe0.65Te0.35 (GST) are rationally designed and synthesized: one with a layered hexagonal structure (H-GST) and the other with a non-layered rhombohedral structure (R-GST). Thanks to the three-dimensional (3D) network structure, R-GST possesses a significantly larger weighted mobility than H-GST. Surprisingly, 3D-structured R-GST displays an extremely low lattice thermal conductivity of ∼0.5 W m-1 K-1 at 523 K, which is comparable to that of layered H-GST. The two-dimensional (2D)-like phonon transport in R-GST stems from the unique off-centering Ge atoms that induce ferroelectric instability, yielding soft polar phonons, as demonstrated by the Boson peak detected by the low-temperature specific heat and calculated phonon spectra. Furthermore, 1 mol % doping of Sb is utilized to successfully suppress the undesired phase transition of R-GST toward H-GST at elevated temperatures. Consequently, a peak ZT of 1.1 at 623 K is attained in the rhombohedral Ge0.99Sb0.01Se0.65Te0.35 sample, which is 1 order of magnitude larger than that of GeSe. This work demonstrates the feasibility of exploring high-performance thermoelectric materials with decoupled charge and phonon transport in off-centering compounds.
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Affiliation(s)
- Jingjing Cui
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Chenghao Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Weiwei Hu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Hao Luo
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Qicai Mei
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Songlin Li
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Weibin Xu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Gangjian Tan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
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5
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Wu Y, Ji L, Ding Y, Zhou L. High throughput screening of semiconductors with low lattice thermal transport induced by long-range interactions. MATERIALS HORIZONS 2024; 11:3651-3661. [PMID: 38767150 DOI: 10.1039/d4mh00363b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Semiconductors with long-range interactions (LRI) due to resonant bonding exhibit delocalized electronic states and low lattice thermal conductivity, contributing to the efficiency of heat-to-electricity conversion. Here, we build a descriptor for high-throughput screening of LRI materials from the second-order interaction force constants. We identify 75 semiconducting candidates from the binary compounds in the MatHub-3d database that contain LRI. By analyzing the bonding properties of LRI atoms, we classify LRI in materials into two categories: type I and type II. In the structural unit of type I LRI, the atoms have strong bond connections, while a weak bond exists between the two groups in the structural unit of type II LRI. We have identified atypical type I LRI formed by Sb-Sb and Mg-Mg pairs in the emerging thermoelectric material Mg3Sb2, resulting in the softening of TA1 phonons and large anharmonicity. For type II LRI, the LRI of Ge-Ge and Se-Se pairs in R3m-GeSe can cross different layers. Moreover, we observe a combination of type II LRI and rattling effect in BaSe2 to restrict thermal transport. This work is of great significance for understanding the relationship between LRI and thermal transport properties, and for designing new LRI-induced low lattice thermal conductivity materials.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Linxuan Ji
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Yimin Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Liujiang Zhou
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
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6
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Sarkar D, Bhui A, Maria I, Dutta M, Biswas K. Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance. Chem Soc Rev 2024; 53:6100-6149. [PMID: 38717749 DOI: 10.1039/d4cs00038b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.
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Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Animesh Bhui
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Ivy Maria
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Moinak Dutta
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
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7
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Wang R, Liang F, Zhang X, Zhao C, Fang Y, Zheng C, Huang F. Ultralow Thermal Conductivity of a Chalcogenide System Pt 3Bi 4Q 9 (Q = S, Se) Driven by the Hierarchy of Rigid [Pt 6Q 12] 12- Clusters Embedded in Soft Bi-Q Sublattice. J Am Chem Soc 2024; 146:7352-7362. [PMID: 38447048 DOI: 10.1021/jacs.3c12242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Knowledge of structure-property relationships in solids with intrinsic low thermal conductivity is crucial for fields such as thermoelectrics, thermal barrier coatings, and refractories. Herein, we propose a new "rigidness in softness" structural scheme for intrinsic low lattice thermal conductivity (κL), which embeds rigid clusters into the soft matrix to induce large lattice anharmonicity, and accordingly discover a new series of chalcogenides Pt3Bi4Q9 (Q = S, Se). Pt3Bi4S9-xSex (x = 3, 6) achieved an intrinsic ultralow κL down to 0.39 W/(m K) at 773 K, which is considerably low among the Bi chalcogenide thermoelectric materials. Pt3Bi4Q9 contains the rigid cubic [Pt6Q12]12- clusters embedded in the soft Bi-Q sublattice, involving multiple bonding interactions and vibration hierarchy. The hierarchical structure yields a large lattice anharmonicity with high Grüneisen parameters (γ) 1.97 of Pt3Bi4Q9, as verified by the effective scatter of low-lying optical phonons toward heat-carrying acoustic phonons. Consequently, the rigid-soft coupling significantly inhibits heat propagation, exhibiting low acoustic phonon frequencies (∼25 cm-1) and Debye temperatures (ΘD = 170.4 K) in Pt3Bi4Se9. Owing to the suppressed κL and considerable power factor (PF), the ZT value of Pt3Bi4S6Se3 can reach 0.56 at 773 K without heavy carrier doping, which is competitive among the pristine Bi chalcogenides. Theoretical calculations predicted a large potential for performance improvement via proper doping, indicating the great potential of this structure type for promising thermoelectric materials.
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Affiliation(s)
- Ruiqi Wang
- School of Chemical Engineering, University of Chinese Academy of Sciences, Beijing 101408, P. R. China
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Fei Liang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Xian Zhang
- Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094 P. R. China
| | - Chendong Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Chong Zheng
- Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, Illinois 60115, United States
| | - Fuqiang Huang
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
- State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
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Kashyap A, Rawat D, Sarkar D, Singh NK, Biswas K, Soni A. Chemically Transformed Ag 2 Te Nanowires on Polyvinylidene Fluoride Membrane For Flexible Thermoelectric Applications. Angew Chem Int Ed Engl 2024; 63:e202401234. [PMID: 38252519 DOI: 10.1002/anie.202401234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Revised: 01/20/2024] [Accepted: 01/22/2024] [Indexed: 01/24/2024]
Abstract
Flexible thermoelectric devices of nanomaterials have shown a great potential for applications in wearable to remotely located electronics with desired shapes and geometries. Continuous powering up the low power flexible electronics is a major challenge. We are reporting a flexible thermoelectric module prepared from silver telluride (Ag2 Te) nanowires (NWs), which are chemically transformed from uniquely synthesized and scalable tellurium (Te) NWs. Conducting Ag2 Te NWs composites have shown an ultralow total thermal conductivity ~0.22 W/mK surpassing the bulk melt-grown Ag2 Te ~1.23 W/mK at ~300 K, which is attributed to the nanostructuring of the material. Flexible thermoelectric device consisting of 4 legs (n-type) of Ag2 Te NWs on polyvinylidene fluoride membrane displays a significant output voltage (Voc ) ~2.3 mV upon human touch and Voc ~18 mV at temperature gradient, ΔT ~50 K, which shows the importance of NWs based flexible thermoelectric devices to power up the low power wearable electronics.
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Affiliation(s)
- Ankit Kashyap
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi, 175075, Himachal Pradesh, India
| | - Divya Rawat
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi, 175075, Himachal Pradesh, India
| | - Debattam Sarkar
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore, 560064, India
| | - Niraj Kumar Singh
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi, 175075, Himachal Pradesh, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore, 560064, India
| | - Ajay Soni
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi, 175075, Himachal Pradesh, India
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Wang AY, Ran MY, Wu XT, Lin H, Zhu QL. Ba 10In 2Mn 11Si 3O 12S 18: First Hexanary Oxychalcogenide Containing an Infrequent Three-Dimensional Noncentrosysmmetric Framework. Inorg Chem 2024; 63:4022-4027. [PMID: 38391142 DOI: 10.1021/acs.inorgchem.4c00313] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/24/2024]
Abstract
Noncentrosymmetric (NCS) oxychalcogenides have attracted great attention in recent years due to their immense potential as candidates for IR nonlinear-optical (NLO) applications. Despite notable advancements in this field, the discovery of oxychalcogenides with three-dimensional (3D) framework structures remains a formidable challenge. In this study, we report the discovery of the first hexanary oxychalcogenide, Ba10In2Mn11Si3O12S18, exhibiting second-order NLO activity, using a high-temperature solid-phase method. This compound showcases a novel structure type, featuring an uncommon NCS 3D [In2Mn11Si3O12S18]20- framework formed by vertex-sharing [(Mn/In)S6] octahedra, [(Mn/In)OS3] tetrahedra, and [SiO4] tetrahedra, with charge-balanced Ba2+ cations occupying the channels. Our study serves as a source of inspiration for researchers to further investigate the synthesis of novel NLO-active oxychalcogenides with 3D frameworks.
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Affiliation(s)
- A-Yang Wang
- College of Chemistry, Fuzhou University, Fuzhou 350002, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Mao-Yin Ran
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xin-Tao Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hua Lin
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qi-Long Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Fujian Key Laboratory of Rare-earth Functional Materials, Fujian Shanhai Collaborative Innovation Center of Rare-earth Functional Materials, Longyan 366300, China
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10
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McKeever H, Patil NN, Palabathuni M, Singh S. Functional Alkali Metal-Based Ternary Chalcogenides: Design, Properties, and Opportunities. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:9833-9846. [PMID: 38107194 PMCID: PMC10720346 DOI: 10.1021/acs.chemmater.3c01652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Revised: 09/07/2023] [Indexed: 12/19/2023]
Abstract
The search for novel materials has recently brought research attention to alkali metal-based chalcogenides (ABZ) as a new class of semiconducting inorganic materials. Various theoretical and computational studies have highlighted many compositions of this class as ideal functional materials for application in energy conversion and storage devices. This Perspective discusses the expansive compositional landscape of ABZ compositions that inherently gives a wide spectrum of properties with great potential for application. In the present paper, we examine the technique of synthesizing this particular class of materials and explore their potential for compositional engineering in order to manipulate key functional properties. This study presents the notable findings that have been documented thus far in addition to outlining the potential avenues for implementation and the associated challenges they present. By fulfilling the sustainability requirements of being relativity earth-abundant, environmentally benign, and biocompatible, we anticipate a promising future for alkali metal chalcogenides. Through this Perspective, we aim to inspire continued research on this emerging class of materials, thereby enabling forthcoming breakthroughs in the realms of photovoltaics, thermoelectrics, and energy storage.
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Affiliation(s)
- Hannah McKeever
- Department of Chemical
Sciences and Bernal Institute, University of Limerick, V94 T9PX Limerick, Ireland
| | - Niraj Nitish Patil
- Department of Chemical
Sciences and Bernal Institute, University of Limerick, V94 T9PX Limerick, Ireland
| | - Manoj Palabathuni
- Department of Chemical
Sciences and Bernal Institute, University of Limerick, V94 T9PX Limerick, Ireland
| | - Shalini Singh
- Department of Chemical
Sciences and Bernal Institute, University of Limerick, V94 T9PX Limerick, Ireland
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Tong Z, Pecchia A, Yam C, Dumitrică T, Frauenheim T. Glass-like Transport Dominates Ultralow Lattice Thermal Conductivity in Modular Crystalline Bi 4O 4SeCl 2. NANO LETTERS 2023; 23:9468-9473. [PMID: 37830499 DOI: 10.1021/acs.nanolett.3c02957] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Crystalline Bi4O4SeCl2 exhibits record-low 0.1 W/mK lattice thermal conductivity (κL), but the underlying transport mechanism is not yet understood. Using a theoretical framework which incorporates first-principles anharmonic lattice dynamics into a unified heat transport theory, we compute both the particle-like and glass-like components of κL in crystalline and pellet Bi4O4SeCl2 forms. The model includes intrinsic three- and four-phonon scattering processes and extrinsic defect and extended defect scattering contributing to the phonon lifetime, as well as temperature-dependent interatomic force constants linked to phonon frequency shifts and anharmonicity. Bi4O4SeCl2 displays strongly anisotropic complex crystal behavior with dominant glass-like transport along the cross-plane direction. The uncovered origin of κL underscores an intrinsic approach for designing extremely low κL materials.
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Affiliation(s)
- Zhen Tong
- School of Advanced Energy, Sun Yat-Sen University, Shenzhen 518107, China
| | | | - ChiYung Yam
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518000, China
| | - Traian Dumitrică
- Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Thomas Frauenheim
- Beijing Computational Science Research Center, Beijing 100193, China
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
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12
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Chen X, Zhou SH, Zhang C, Lin H, Liu Y. A novel bifunctional thioarsenate based on unprecedented molecular [Cd 4As 8Se 16(Se 2) 2] 8- cluster anions. Chem Commun (Camb) 2023; 59:12124-12127. [PMID: 37740276 DOI: 10.1039/d3cc03538g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/24/2023]
Abstract
Exploring and developing new functional inorganic chalcogenides with unique structures is always one of the most important missions in solid-state chemistry, especially those with molecular structures. Herein, a novel quaternary thioarsenate, Cs2CdAsSe5, is found to be based on an unprecedented molecular (poly)chalcogenide cluster architecture, which has never been discovered in inorganic chalcogenide systems. This rare windmill-like [Cd4As8Se16(Se2)2]8- cluster is made of four [CdSe4] and [As(V)Se4] tetrahedra via corner-sharing Se atoms and Se-Se bonds. Specifically, Cs2CdAsSe5 exhibits a remarkable photocurrent response and a large computationally predicted birefringence, and the origin of the optoelectronic performance and optical anisotropy is confirmed by detailed theoretical investigation.
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Affiliation(s)
- Xin Chen
- Institute for Composites Science Innovation (InCSI), School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
| | - Sheng-Hua Zhou
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Zhang
- Institute for Composites Science Innovation (InCSI), School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
| | - Hua Lin
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Yi Liu
- Institute for Composites Science Innovation (InCSI), School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
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13
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Yuan J, Chen Y, Liao B. Lattice Dynamics and Thermal Transport in Semiconductors with Anti-Bonding Valence Bands. J Am Chem Soc 2023; 145:18506-18515. [PMID: 37566730 DOI: 10.1021/jacs.3c05091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2023]
Abstract
Achieving high thermoelectric performance requires efficient manipulation of thermal conductivity and a fundamental understanding of the microscopic mechanisms of phonon transport in crystalline solids. One of the major challenges in thermal transport is achieving ultralow lattice thermal conductivity. In this study, we use the anti-bonding character of the highest-occupied valence band as an efficient descriptor for discovering new materials with an ultralow thermal conductivity. We first examined the relationship between anti-bonding valence bands (ABVBs) and low lattice thermal conductivity in model systems PbTe and CsPbBr3. Then, we conducted a high-throughput search in the Materials Project database and identified over 600 experimentally stable binary semiconductors with an anti-bonding character in their valence bands. From our candidate list, we conducted a comprehensive analysis of the chemical bonds and the thermal transport in the XS family, where X = K, Rb, and Cs are alkaline metals. These materials all exhibit ultralow thermal conductivities less than 1 W/(m K) at room temperature despite simple structures. We attributed the ultralow thermal conductivity to the weakened bonds and increased phonon anharmonicity due to their ABVBs. Our results provide chemical intuitions to understand lattice dynamics in crystals and open up a convenient venue toward searching for materials with an intrinsically low lattice thermal conductivity.
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Affiliation(s)
- Jiaoyue Yuan
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Yubi Chen
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Bolin Liao
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
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14
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Xia Y, Gaines D, He J, Pal K, Li Z, Kanatzidis MG, Ozoliņš V, Wolverton C. A unified understanding of minimum lattice thermal conductivity. Proc Natl Acad Sci U S A 2023; 120:e2302541120. [PMID: 37339199 PMCID: PMC10293811 DOI: 10.1073/pnas.2302541120] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Accepted: 05/22/2023] [Indexed: 06/22/2023] Open
Abstract
We propose a first-principles model of minimum lattice thermal conductivity ([Formula: see text]) based on a unified theoretical treatment of thermal transport in crystals and glasses. We apply this model to thousands of inorganic compounds and find a universal behavior of [Formula: see text] in crystals in the high-temperature limit: The isotropically averaged [Formula: see text] is independent of structural complexity and bounded within a range from ∼0.1 to ∼2.6 W/(m K), in striking contrast to the conventional phonon gas model which predicts no lower bound. We unveil the underlying physics by showing that for a given parent compound, [Formula: see text] is bounded from below by a value that is approximately insensitive to disorder, but the relative importance of different heat transport channels (phonon gas versus diffuson) depends strongly on the degree of disorder. Moreover, we propose that the diffuson-dominated [Formula: see text] in complex and disordered compounds might be effectively approximated by the phonon gas model for an ordered compound by averaging out disorder and applying phonon unfolding. With these insights, we further bridge the knowledge gap between our model and the well-known Cahill-Watson-Pohl (CWP) model, rationalizing the successes and limitations of the CWP model in the absence of heat transfer mediated by diffusons. Finally, we construct graph network and random forest machine learning models to extend our predictions to all compounds within the Inorganic Crystal Structure Database (ICSD), which were validated against thermoelectric materials possessing experimentally measured ultralow κL. Our work offers a unified understanding of [Formula: see text], which can guide the rational engineering of materials to achieve [Formula: see text].
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Affiliation(s)
- Yi Xia
- Department of Mechanical and Materials Engineering, Portland State University, Portland, OR97201
| | - Dale Gaines
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL60208
| | - Jiangang He
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing100083, China
| | - Koushik Pal
- Materials Science & Technology Division, Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM87545
| | - Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL60208
| | - Mercouri G. Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, IL60208
- Materials Science Division, Argonne National Laboratory, Argonne, IL60439
| | - Vidvuds Ozoliņš
- Department of Applied Physics, Yale University, New Haven, CT06511
- Energy Sciences Institute, Yale University, West Haven, CT06516
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL60208
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15
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Tang Y, Yu Y, Zhao N, Liu K, Chen H, Stoumpos CC, Shi Y, Chen S, Yu L, Wu J, Zhang Q, Su X, Tang X. High‐Performance Thermoelectric α‐Ag
9
Ga
1−
x
Te
6
Compounds with Ultralow Lattice Thermal Conductivity Originating from Ag
9
Te
2
Motifs. Angew Chem Int Ed Engl 2022; 61:e202208281. [DOI: 10.1002/anie.202208281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Indexed: 11/06/2022]
Affiliation(s)
- Yingfei Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
- International School of Materials Science and Engineering Wuhan University of Technology Wuhan 430070 China
| | - Yimeng Yu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
- Nanostructure Research Center Wuhan University of Technology Wuhan 430070 China
| | - Na Zhao
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Keke Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Haijie Chen
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering Donghua University Shanghai 201620 China
| | - Constantinos C. Stoumpos
- Department of Materials Science and Technology Voutes Campus University of Crete Iraklio, Heraklion 70013 Greece
| | - Yixuan Shi
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
- International School of Materials Science and Engineering Wuhan University of Technology Wuhan 430070 China
| | - Shuo Chen
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Lingxiao Yu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
- International School of Materials Science and Engineering Wuhan University of Technology Wuhan 430070 China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
- Nanostructure Research Center Wuhan University of Technology Wuhan 430070 China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
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16
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Ma JJ, Liu QY, Liu PF, Zhang P, Sanyal B, Ouyang T, Wang BT. Ultralow thermal conductivity and anisotropic thermoelectric performance in layered materials LaMOCh (M = Cu, Ag; Ch = S, Se). Phys Chem Chem Phys 2022; 24:21261-21269. [PMID: 36040434 DOI: 10.1039/d2cp02067j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In layered materials with the stacking axis perpendicular to the basal plane, anharmonicity strongly affects phonon propagation due to weak interlayer coupling, which is helpful to reduce the lattice thermal conductivity and improve the thermoelectric (TE) performance significantly. By combining first-principles calculations and the Boltzmann transport equation, we systematically analyzed and evaluated the lattice thermal conductivity and TE properties of LaMOCh (M = Cu, Ag; Ch = S, Se). The results indicate that these layered materials exhibit ultralow lattice thermal conductivities of 0.24-0.37 W m-1 K-1 along the interlayer direction at room temperature. The low lattice thermal conductivities have been analyzed from some inherent phonon properties, such as low acoustic phonon group velocity, large Grüneisen parameters, and a short phonon relaxation time. Originating from their natural layered crystal structure, the thermal and electronic transports (i.e., thermal conductivity, Seebeck coefficient, and electrical conductivity) are both highly anisotropic between their intralayer and interlayer directions. Finally, we obtained ZT values of 1.17 and 1.26 at 900 K along the interlayer direction for n-type LaCuOSe and LaAgOSe, respectively. Generally, LaMOSe exhibit larger anisotropy than LaMOS, in both n- and p-types of doping. Our findings of low thermal conductivities and large anisotropic TE performances of these layered systems should stimulate much attention in BiCuOSe and alike layered TE families.
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Affiliation(s)
- Jiang-Jiang Ma
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Qing-Yi Liu
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China.,School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
| | - Peng-Fei Liu
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Ping Zhang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.,Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Uppsala 75120, Sweden
| | - Tao Ouyang
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
| | - Bao-Tian Wang
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China.,School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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17
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Tang Y, Yu Y, Zhao N, Liu K, Chen H, Stoumpos CC, Shi Y, Chen S, Yu L, Wu J, Zhang Q, Su X, Tang X. High‐Performance Thermoelectrics α‐Ag9Ga1‐xTe6 Compounds with Ultra‐low Lattice Thermal Conductivity Originating from Ag9Te2 Motifs. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202208281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Yingfei Tang
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Yimeng Yu
- WHUT: Wuhan University of Technology Nanostructure Research Center CHINA
| | - Na Zhao
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Keke Liu
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Haijie Chen
- Donghua University State Key Laboratory for Modification of Chemical Fibers and Polymer Materials CHINA
| | | | - Yixuan Shi
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Shuo Chen
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Lingxiao Yu
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Jinsong Wu
- Wuhan University of Technology Nanostructure Research Center CHINA
| | - Qingjie Zhang
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Xianli Su
- Wuhan University of Technology State Key Laboratory of Advanced Technology for Materials Synthesis and Processing CHINA
| | - Xinfeng Tang
- Wuhan University of Technology 122# Luoshi RoadHongshan District 430070 Wuhan CHINA
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18
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Ma N, Zhang Z, Nan P, Bai W, Li K, Zhao J, Zhou S, Ge B, Yang J, Xiao C, Xie Y. Phonon Symphony of Stacked Multilayers and Weak Bonds Lowers Lattice Thermal Conductivity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202677. [PMID: 35612001 DOI: 10.1002/adma.202202677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Revised: 05/09/2022] [Indexed: 06/15/2023]
Abstract
Controlling lattice vibrations to obtain intrinsic low thermal conductivity play a critical role in thermal management of electronic and photonic devices, energy converters, and thermal insulation, which necessitates exploring new compounds and a thorough understanding of their chemical structure, bonding, and lattice dynamics. Herein, a new chalcogenide, Ga6 Cr5 Se16 , shows intrinsic low lattice thermal conductivity κlat , which crystallizes in the monoclinic phase (C2/m) with the stacked inverse GaSe4 layers (g'), close-packed Cr3+ Se6 layers (c), GaSe4 layers (g) and loosely-stacked Cr2+ Se6 layers (c') along the c-axis. In this structure, a wide variety of chemical bonding is arranged in each layer, such as covalent Ga-Se, covalent Cr3+ -Se, and weaker Cr2+ -Se bonding, which endow it with a large phonon symphony by strong coupling of soft acoustic and low-lying optical phonons. As a result, Ga6 Cr5 Se16 realizes an intrinsic low κlat of 0.79 W m- 1 K- 1 at 323 K, which is almost four times, or twice lower than that of Cr3 Se4 (2.95 W m- 1 K- 1 ), or Cr2 Se3 (1.56 W m- 1 K- 1 ), Ga2 Se3 (1.36 W m- 1 K- 1 ) at 323 K, respectively. These insights will offer comprehensive understanding of the phonon propagation in complex layered chalcogenides, and also shed useful light on future design of low-κlat solids.
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Affiliation(s)
- Ni Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui, 230031, P. R. China
| | - Zhou Zhang
- Materials Genome Institute, Shanghai University, Shanghai, 200444, P. R. China
| | - Pengfei Nan
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, P. R. China
| | - Wei Bai
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Kai Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Jiyin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Shiming Zhou
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Binghui Ge
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, P. R. China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai, 200444, P. R. China
- Zhejiang Laboratory, Hangzhou, Zhejiang, 311100, P. R. China
| | - Chong Xiao
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui, 230031, P. R. China
- Dalian National Laboratory for Clean Energy, Chinese Academy of Science, Dalian, Liaoning, 116023, P. R. China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui, 230031, P. R. China
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19
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Ghosh T, Dutta M, Sarkar D, Biswas K. Insights into Low Thermal Conductivity in Inorganic Materials for Thermoelectrics. J Am Chem Soc 2022; 144:10099-10118. [PMID: 35652915 DOI: 10.1021/jacs.2c02017] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
Efficient manipulation of thermal conductivity and fundamental understanding of the microscopic mechanisms of phonon scattering in crystalline solids are crucial to achieve high thermoelectric performance. Thermoelectric energy conversion directly and reversibly converts between heat and electricity and is a promising renewable technology to generate electricity by recovering waste heat and improve solid-state refrigeration. However, a unique challenge in thermal transport needs to be addressed to achieve high thermoelectric performance: the requirement of crystalline materials with ultralow lattice thermal conductivity (κL). A plethora of strategies have been developed to lower κL in crystalline solids by means of nanostructural modifications, introduction of intrinsic or extrinsic phonon scattering centers with tailored shape and dimension, and manipulation of defects and disorder. Recently, intrinsic local lattice distortion and lattice anharmonicity originating from various mechanisms such as rattling, bonding heterogeneity, and ferroelectric instability have found popularity. In this Perspective, we outline the role of manipulation of chemical bonding and structural chemistry on thermal transport in various high-performance thermoelectric materials. We first briefly outline the fundamental aspects of κL and discuss the current status of the popular phonon scattering mechanisms in brief. Then we discuss emerging new ideas with examples of crystal structure and lattice dynamics in exemplary materials. Finally, we present an outlook for focus areas of experimental and theoretical challenges, possible new directions, and integrations of novel techniques to achieve low κL in order to realize high-performance thermoelectric materials.
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Affiliation(s)
- Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Moinak Dutta
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Debattam Sarkar
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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20
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Ag 9GaSe 6: high-pressure-induced Ag migration causes thermoelectric performance irreproducibility and elimination of such instability. Nat Commun 2022; 13:2966. [PMID: 35624124 PMCID: PMC9142491 DOI: 10.1038/s41467-022-30716-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2021] [Accepted: 05/12/2022] [Indexed: 11/28/2022] Open
Abstract
The argyrodite Ag9GaSe6 is a newly recognized high-efficiency thermoelectric material with an ultralow thermal conductivity; however, liquid-like Ag atoms are believed to cause poor stability and performance irreproducibility, which was evidenced even after the 1st measurement run. Herein, we demonstrate the abovementioned instability and irreproducibility are caused by standard thermoelectric sample hot-pressing procedure, during which high pressure promotes the 3-fold-coordinated Ag atoms migrate to 4-fold-coordinated sites with higher-chemical potentials. Such instability can be eliminated by a simple annealing treatment, driving the metastable Ag atoms back to the original sites with lower-chemical potentials as revealed by the valence band X-ray photoelectron chemical potential spectra and single crystal X-ray diffraction data. Furthermore, the hot-pressed-annealed samples exhibit great stability and TE property repeatability. Such a stability and repeatability has never been reported before. This discovery will give liquid-like materials great application potential. The Ag9GaSe6 is a high-efficient thermoelectric material yet suffers instability. Here, the authors demonstrate the instability is caused by the pressure-induced liquid-like Ag migration, which can be eliminated by a simple annealing treatment.
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21
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Xie QY, Liu PF, Ma JJ, Kuang FG, Zhang KW, Wang BT. Monolayer SnI 2: An Excellent p-Type Thermoelectric Material with Ultralow Lattice Thermal Conductivity. MATERIALS 2022; 15:ma15093147. [PMID: 35591480 PMCID: PMC9101867 DOI: 10.3390/ma15093147] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 04/19/2022] [Accepted: 04/24/2022] [Indexed: 02/04/2023]
Abstract
Using density functional theory and semiclassical Boltzmann transport equation, the lattice thermal conductivity and electronic transport performance of monolayer SnI2 were systematically investigated. The results show that its room temperature lattice thermal conductivities along the zigzag and armchair directions are as low as 0.33 and 0.19 W/mK, respectively. This is attributed to the strong anharmonicity, softened acoustic modes, and weak bonding interactions. Such values of the lattice thermal conductivity are lower than those of other famous two-dimensional thermoelectric materials such as MoO3, SnSe, and KAgSe. The two quasi-degenerate band valleys for the valence band maximum make it a p-type thermoelectric material. Due to its ultralow lattice thermal conductivities, coupled with an ultrahigh Seebeck coefficient, monolayer SnI2 possesses an ultrahigh figure of merits at 800 K, approaching 4.01 and 3.34 along the armchair and zigzag directions, respectively. The results indicate that monolayer SnI2 is a promising low-dimensional thermoelectric system, and would stimulate further theoretical and experimental investigations of metal halides as thermoelectric materials.
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Affiliation(s)
- Qing-Yu Xie
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China; (Q.-Y.X.); (P.-F.L.); (J.-J.M.)
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China
| | - Peng-Fei Liu
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China; (Q.-Y.X.); (P.-F.L.); (J.-J.M.)
- Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Jiang-Jiang Ma
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China; (Q.-Y.X.); (P.-F.L.); (J.-J.M.)
- Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Fang-Guang Kuang
- School of Physics and Electronic Information, Gannan Normal University, Ganzhou 341000, China;
| | - Kai-Wang Zhang
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China
- Correspondence: (K.-W.Z.); (B.-T.W.)
| | - Bao-Tian Wang
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China; (Q.-Y.X.); (P.-F.L.); (J.-J.M.)
- Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Correspondence: (K.-W.Z.); (B.-T.W.)
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22
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Xie QY, Ma JJ, Liu QY, Liu PF, Zhang P, Zhang KW, Wang BT. Low thermal conductivity and high performance anisotropic thermoelectric properties of XSe (X = Cu, Ag, Au) monolayers. Phys Chem Chem Phys 2022; 24:7303-7310. [PMID: 35262117 DOI: 10.1039/d1cp05708a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Combining density functional theory (DFT) and semi-classic Boltzmann transport theory, we report the thermoelectric (TE) performance of a family of two-dimensional (2D) group IB-selenides XSe (X = Cu, Ag, Au). The results show that these monolayers exhibit small and anisotropic phonon velocities (0.98-3.84 km s-1), large Grüneisen parameters (up to 100), and drastic phonon scattering between the optical and acoustic phonons. These intrinsic properties originate from strong phonon anharmonicity and suppress the heat transport capacity, resulting in low lattice thermal conductivities (12.54 and 1.22 W m-1 K-1) along the x- and y-directions for a CuSe monolayer. Among our studied monolayers, the 2D CuSe monolayer possesses the most remarkable TE performance with ultrahigh ZT (3.26) for n-type doping along the y-direction at 300 K. CuSe monolayer can achieve higher thermoelectric conversion efficiency at a lower synthetic preparation cost than the expensive AgSe and AuSe monolayers, and our work provides a theoretical basis for paving the way for further experimental studies.
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Affiliation(s)
- Qing-Yu Xie
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China. .,Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China.
| | - Jiang-Jiang Ma
- Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Qing-Yi Liu
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China. .,Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China.
| | - Peng-Fei Liu
- Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Pei Zhang
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China.
| | - Kai-Wang Zhang
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China.
| | - Bao-Tian Wang
- Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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23
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Li J, Hu W, Yang J. High-Throughput Screening of Rattling-Induced Ultralow Lattice Thermal Conductivity in Semiconductors. J Am Chem Soc 2022; 144:4448-4456. [PMID: 35230828 DOI: 10.1021/jacs.1c11887] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Thermoelectric (TE) materials with rattling model show ultralow lattice thermal conductivity for high-efficient energy conversion between heat and electricity. In this work, by analysis of the key spirit of the rattling model, we propose an efficient empirical descriptor to realize the high-throughput screening of ultralow thermal conductivity in a series of semiconductors. This descriptor extracts the structural information of rattling atoms whose bond lengths with all the nearest neighboring atoms are larger than the sum of corresponding covalent radiuses. We obtain 1171 candidates from the Materials Project (MP) Database that contains more than 100 000 materials. Combining the empirical equation of high-throughput computation with a machine learning algorithm, we compute the approximate lattice thermal conductivities (κL) and find the κL values of 532 materials are less than 2.0 W m-1 K-1 at 300 K, which can be regarded as the criteria of ultralow κL in general. In particular, we demonstrate that halide double perovskites structures show ultralow κL, which provides valuable references for promising low κL materials in future experiments. In order to further verify our computational results, we calculate accurate κL for Rb2SnBr6 and CsCu3O2 as candidates with the low lattice thermal conductivity by solving the phonon Boltzmann transport equation. In particular, we demonstrate that Rb2SnBr6 has the lowest κL value of 0.1 W m-1 K-1 at 300 K of all known thermal conductivity materials with the rattling model so far.
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Affiliation(s)
- Jielan Li
- Hefei National Laboratory for Physical Sciences at the Microscale, and Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Hu
- Hefei National Laboratory for Physical Sciences at the Microscale, and Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at the Microscale, and Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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24
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Panigrahi G, Yadav S, Jana S, Ghosh A, Niranjan MK, Prakash J. Syntheses and characterization of two new layered ternary chalcogenides NaScQ 2 (Q = Se and Te). NEW J CHEM 2022. [DOI: 10.1039/d2nj04783g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Two new metal ternary chalcogenides, NaScSe2 and NaScTe2, have been synthesized via high-temperature reaction.
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Affiliation(s)
- Gopabandhu Panigrahi
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, 502284, India
| | - Sweta Yadav
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, 502284, India
| | - Subhendu Jana
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, 502284, India
| | - Arghya Ghosh
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, 502284, India
| | - Manish K. Niranjan
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, 502284, India
| | - Jai Prakash
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, 502284, India
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25
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Jong UG, Kang CJ, Kim SY, Kim HC, Yu CJ. Superior thermoelectric properties of ternary chalcogenides CsAg5Q3 (Q = Te, Se) predicted by firstprinciples calculations. Phys Chem Chem Phys 2022; 24:5729-5737. [DOI: 10.1039/d1cp05796k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Tailoring novel thermoelectric materials (TMs) with a high efficiency is challenging due to a difficulty in realizing both low thermal conductivity and high thermopower factor. In this work, we propose...
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26
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Ma N, Li F, Li JG, Liu X, Zhang DB, Li YY, Chen L, Wu LM. Mixed-Valence CsCu 4Se 3: Large Phonon Anharmonicity Driven by the Hierarchy of the Rigid [(Cu +) 4(Se 2-) 2](Se -) Double Anti-CaF 2 Layer and the Soft Cs + Sublattice. J Am Chem Soc 2021; 143:18490-18501. [PMID: 34705460 DOI: 10.1021/jacs.1c07629] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Crystalline solids that exhibit inherently low lattice thermal conductivity (κlat) have attracted a great deal of attention because they offer the only independent control for pursuing a high thermoelectric figure of merit (ZT). Herein, we report the successful preparation of CsCu4Q3 (Q = S (compound 1), Se (compound 2)) with the aid of a safe and facile boron-chalcogen method. The single-crystal diffraction data confirm the P4/mmm hierarchical structures built up by the mixed-valence [(Cu+)4(Q2-)2](Q-) double anti-CaF2 layer and the NaCl-type Cs+ sublattice involving multiple bonding interactions. The electron-poor compound CsCu4Q3 features Cu-Q antibonding states around EF that facilitates a high σ value of 3100 S/cm in 2 at 323 K. Significantly, the ultralow κlat value of 2, 0.20 W/m/K at 650 K (70% lower than that of Cu2Se), is mainly driven by the vibrational coupling of the rigid double anti-CaF2 layer and the soft NaCl-type sublattice. The hierarchical structure increases the bond multiplicity, which eventually leads to a large phonon anharmonicity, as evidenced by the effective scattering of the low-lying optical phonons to the heat-carrying acoustic phonons. Consequently, the acoustic phonon frequency in 2 drops sharply from 118 cm-1 (of Cu2Se) to 48 cm-1. In addition, the elastic properties indicate that the hierarchical structure largely inhibits the transverse phonon modes, leading to a sound velocity (1571 m/s) and a Debye temperature (189 K) lower than those of Cu2Se (2320 m/s; 292 K).
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Affiliation(s)
- Ni Ma
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China
| | - Fan Li
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jian-Gao Li
- College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Xin Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Dong-Bo Zhang
- College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Yan-Yan Li
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China
| | - Ling Chen
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China.,Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Li-Ming Wu
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China.,Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
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27
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Zhou C, Lee YK, Yu Y, Byun S, Luo ZZ, Lee H, Ge B, Lee YL, Chen X, Lee JY, Cojocaru-Mirédin O, Chang H, Im J, Cho SP, Wuttig M, Dravid VP, Kanatzidis MG, Chung I. Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal. NATURE MATERIALS 2021; 20:1378-1384. [PMID: 34341524 PMCID: PMC8463294 DOI: 10.1038/s41563-021-01064-6] [Citation(s) in RCA: 116] [Impact Index Per Article: 38.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2021] [Accepted: 06/24/2021] [Indexed: 05/21/2023]
Abstract
Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2-2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m-1 K-1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.
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Affiliation(s)
- Chongjian Zhou
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
| | - Yong Kyu Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
| | - Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, Aachen, Germany
| | - Sejin Byun
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Zhong-Zhen Luo
- Department of Chemistry, Northwestern University, Evanston, IL, USA
| | - Hyungseok Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Bangzhi Ge
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
| | - Yea-Lee Lee
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea
| | - Xinqi Chen
- Department of Mechanical Engineering, Northwestern University, Evanston, IL, USA
| | - Ji Yeong Lee
- Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | | | - Hyunju Chang
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea
| | - Jino Im
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea
| | - Sung-Pyo Cho
- National Center for Inter-University Research Facilities, Seoul National University, Seoul, Republic of Korea
| | - Matthias Wuttig
- Institute of Physics (IA), RWTH Aachen University, Aachen, Germany
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
| | - In Chung
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea.
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, Republic of Korea.
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28
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Hu L, Fang YW, Qin F, Cao X, Zhao X, Luo Y, Repaka DVM, Luo W, Suwardi A, Soldi T, Aydemir U, Huang Y, Liu Z, Hippalgaonkar K, Snyder GJ, Xu J, Yan Q. High thermoelectric performance enabled by convergence of nested conduction bands in Pb 7Bi 4Se 13 with low thermal conductivity. Nat Commun 2021; 12:4793. [PMID: 34373453 PMCID: PMC8352968 DOI: 10.1038/s41467-021-25119-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Accepted: 07/19/2021] [Indexed: 02/07/2023] Open
Abstract
Thermoelectrics enable waste heat recovery, holding promises in relieving energy and environmental crisis. Lillianite materials have been long-term ignored due to low thermoelectric efficiency. Herein we report the discovery of superior thermoelectric performance in Pb7Bi4Se13 based lillianites, with a peak figure of merit, zT of 1.35 at 800 K and a high average zT of 0.92 (450-800 K). A unique quality factor is established to predict and evaluate thermoelectric performances. It considers both band nonparabolicity and band gaps, commonly negligible in conventional quality factors. Such appealing performance is attributed to the convergence of effectively nested conduction bands, providing a high number of valley degeneracy, and a low thermal conductivity, stemming from large lattice anharmonicity, low-frequency localized Einstein modes and the coexistence of high-density moiré fringes and nanoscale defects. This work rekindles the vision that Pb7Bi4Se13 based lillianites are promising candidates for highly efficient thermoelectric energy conversion.
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Affiliation(s)
- Lei Hu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan.
| | - Yue-Wen Fang
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan
| | - Feiyu Qin
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan
| | - Xun Cao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yubo Luo
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Durga Venkata Maheswar Repaka
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Wenbo Luo
- Institute for Advanced Materials, North China Electric Power University, Beijing, China
| | - Ady Suwardi
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Thomas Soldi
- Department of Materials and Science Engineering, Northwestern University, Evanston, IL, USA
| | - Umut Aydemir
- Department of Chemistry, Koc University, Sariyer, Istanbul, Turkey
- Koc University Boron and Advanced Materials Application and Research Center, Sariyer, Istanbul, Turkey
| | - Yizhong Huang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Kedar Hippalgaonkar
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - G Jeffrey Snyder
- Department of Materials and Science Engineering, Northwestern University, Evanston, IL, USA
| | - Jianwei Xu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
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29
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Xiao Y, Zhou SH, Yu R, Shen Y, Ma Z, Lin H, Liu Y. Rb 2CuSb 7S 12: Quaternary Antimony-Rich Semiconductor Featuring a Three-Dimensional Open Framework and Exhibiting an Intriguing Photocurrent Response. Inorg Chem 2021; 60:9263-9267. [PMID: 34165289 DOI: 10.1021/acs.inorgchem.1c01278] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
Metal-rich chalcogenides with unique network architectures are rare but are of considerable interest because of their intriguing physical properties. In this work, a novel quaternary thioantimonate, Rb2CuSb7S12, has been discovered by a facile surfactant-thermal reaction. It crystallizes monoclinic space group P1̅ (No. 2) and exhibits a unique Sb-rich three-dimensional (3D) [CuSb7S12]2- framework surrounded by charge-compensating Rb+ cations. It is interesting to note that the Cu/Sb ratio of Rb2CuSb7S12 represents the lowest limit in the quaternary A/Cu/Sb/Q (A = alkali metals; Q = chalcogen) system. Moreover, Rb2CuSb7S12 shows rapid response and good reproducibility based on the photoelectrochemical tests. This study opens up opportunities for discovering the desirable physical properties in metal-rich chalcogenides.
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Affiliation(s)
- Yu Xiao
- Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Sheng-Hua Zhou
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Rui Yu
- Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yaying Shen
- Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zuju Ma
- School of Environmental and Materials Engineering, Yantai University, Yantai 264005, China
| | - Hua Lin
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.,State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Yi Liu
- Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
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30
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Dutta M, Sarkar D, Biswas K. Intrinsically ultralow thermal conductive inorganic solids for high thermoelectric performance. Chem Commun (Camb) 2021; 57:4751-4767. [PMID: 33884387 DOI: 10.1039/d1cc00830g] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Thermoelectric materials which can convert heat energy to electricity rely on crystalline inorganic solid state compounds exhibiting low phonon transport (i.e. low thermal conductivity) without much inhibiting the electrical transport. Suppression of phonons traditionally has been carried out via extrinsic pathways, involving formation of point defects, foreign nanostructures, and meso-scale grains, but the incorporation of extrinsic substituents also influences the electrical properties. Crystalline materials with intrinsically low lattice thermal conductivity (κlat) provide an attractive paradigm as it helps in simplifying the complex interrelated thermoelectric parameters and allows us to focus largely on improving the electronic properties. In this feature article, we have discussed the chemical bonding and structural aspects in determining phonon transport through a crystalline material. We have outlined how the inherent material properties like lone pair, bonding anharmonicity, presence of intrinsic rattlers, ferroelectric instability, weak and rigid substructures, etc. influence in effectively suppressing the heat transport. The strategies summarized in this feature article should serve as a general guide to rationally design and predict materials with low κlat for potential thermoelectric applications.
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Affiliation(s)
- Moinak Dutta
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Debattam Sarkar
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India. and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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31
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Koley B, Lakshan A, Raghuvanshi PR, Singh C, Bhattacharya A, Jana PP. Ultralow Lattice Thermal Conductivity at Room Temperature in Cu
4
TiSe
4. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202014222] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Biplab Koley
- Department of Chemistry IIT Kharagpur Kharagpur 721302 India
| | | | - Parul R. Raghuvanshi
- Department of Metallurgical Eng. and Materials Science IIT Bombay Bombay 400076 India
| | | | - Amrita Bhattacharya
- Department of Metallurgical Eng. and Materials Science IIT Bombay Bombay 400076 India
| | - Partha P. Jana
- Department of Chemistry IIT Kharagpur Kharagpur 721302 India
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32
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Koley B, Lakshan A, Raghuvanshi PR, Singh C, Bhattacharya A, Jana PP. Ultralow Lattice Thermal Conductivity at Room Temperature in Cu 4 TiSe 4. Angew Chem Int Ed Engl 2021; 60:9106-9113. [PMID: 33146447 DOI: 10.1002/anie.202014222] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Indexed: 11/09/2022]
Abstract
Ultralow thermal conductivity draws great attention in a variety of fields of applications such as thermoelectrics and thermal barrier coatings. Herein, the crystal structure and transport properties of Cu4 TiSe4 are reported. Cu4 TiSe4 is a unique example of a non-toxic and low-cost material that exhibits a lattice ultra-low thermal conductivity of 0.19 Wm-1 K-1 at room temperature. The main contribution to the unusually low thermal conductivity is connected with the atomic lattice and its dynamics. This ultralow value of lattice thermal conductivity (kL ) can be attributed to the presence of the localized modes of Cu, which partially hybridize with the Se atoms, which in turn leads to avoidance of crossing of acoustic phonon modes that reach the zone boundary with a reduced frequency. Like a phonon glass electron crystal, Cu4 TiSe4 could also open a route to efficient thermoelectric materials, even, with chalcogenides of relatively high electrical resistivity and a large band gap, provided that their structures offer a sublattice with lightly bound cations.
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Affiliation(s)
- Biplab Koley
- Department of Chemistry, IIT Kharagpur, Kharagpur, 721302, India
| | - Achintya Lakshan
- Department of Chemistry, IIT Kharagpur, Kharagpur, 721302, India
| | - Parul R Raghuvanshi
- Department of Metallurgical Eng. and Materials Science, IIT Bombay, Bombay, 400076, India
| | | | - Amrita Bhattacharya
- Department of Metallurgical Eng. and Materials Science, IIT Bombay, Bombay, 400076, India
| | - Partha P Jana
- Department of Chemistry, IIT Kharagpur, Kharagpur, 721302, India
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33
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Deng S, Jiang X, Chen L, Qi N, Tang X, Chen Z. Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe 1-xSe x through Isoelectronic Substitution. ACS APPLIED MATERIALS & INTERFACES 2021; 13:868-877. [PMID: 33393286 DOI: 10.1021/acsami.0c17836] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this paper, we report a series of x polycrystalline AgCuTe1-xSe samples with high thermoelectric performance. X-ray photoelectron spectroscopy data suggest the observation of Ag+, Cu+, Te2-, and Se2- states of Ag, Cu, Te, and Se. Meanwhile, the carrier concentration of the obtained p-type samples changes from 9.12 × 1018 to 0.86 × 1018 cm-3 as their carrier mobility varies from 698.55 to 410.12 cm2·V-1·s-1 at 300 K. Compared with undoped AgCuTe, an ultralow thermal conductivity is realized in AgCuTe1-xSex due to the enhanced phonon scattering. Ultimately, a maximum figure of merit (ZT) of ∼1.45 at 573 K and a high average ZT above 1.0 at temperatures ranging from room temperature to 773 K can be achieved in AgCuTe0.9Se0.1, which increases by 186% compared to that of the undoped AgCuTe (0.82 at 573 K). This work provides a viable insight toward understanding the effect of the Se atom on the lattice structure and thermoelectric properties of AgCuTe and other transition-metal dichalcogenides.
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Affiliation(s)
- Shuping Deng
- School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University, Wuhan 430072, China
| | - Xianyan Jiang
- School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University, Wuhan 430072, China
| | - Lili Chen
- School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University, Wuhan 430072, China
| | - Ning Qi
- School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University, Wuhan 430072, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Zhiquan Chen
- School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University, Wuhan 430072, China
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34
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Ishtiyak M, Jana S, Karthikeyan R, Ramesh M, Tripathy B, Malladi SK, Niranjan MK, Prakash J. Syntheses of five new layered quaternary chalcogenides SrScCuSe3, SrScCuTe3, BaScCuSe3, BaScCuTe3, and BaScAgTe3: crystal structures, thermoelectric properties, and electronic structures. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00717c] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
Five new layered transition metal-based chalcogenides (SrScCuSe3, SrScCuTe3, BaScCuSe3, BaScCuTe3, and BaScAgTe3) were discovered by the exploratory solid-state method.
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Affiliation(s)
- Mohd Ishtiyak
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
| | - Subhendu Jana
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
| | - R. Karthikeyan
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
| | - M. Ramesh
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
| | - Bikash Tripathy
- Department of Materials Science & Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
| | - Sairam K. Malladi
- Department of Materials Science & Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
| | - Manish K. Niranjan
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
| | - Jai Prakash
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
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35
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Fu Y, Wei H, Wei L, Zhang H, Wang X, Liu B, Zhang Y, Lv X, Zhou J, Yu H. Origin of the difference in thermal conductivity and anharmonic phonon scattering between LiNbO 3 and LiTaO 3. CrystEngComm 2021. [DOI: 10.1039/d1ce01323h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The origin of the different thermal conductivities between LiNbO3 and LiTaO3 stems from the different scattering channels throughout the whole Brillouin zone, as well as the different emission channels of the LA branch along the Γ–F direction.
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Affiliation(s)
- Yangbin Fu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Hui Wei
- Shandong Agriculture and Engineering University, Jinan 250014, China
| | - Lei Wei
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Huadi Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Xuping Wang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Bing Liu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Yuanyuan Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Xianshun Lv
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Jixue Zhou
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Shandong Provincial Key Laboratory of High Strength Lightweight Metallic Materials, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Huajian Yu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
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36
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Chen H, Liu PF, Lin H, Wu XT. A new type of novel salt-inclusion chalcogenide with ultralow thermal conductivity. Chem Commun (Camb) 2020; 56:15149-15152. [PMID: 33210666 DOI: 10.1039/d0cc06306a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The design and development of novel chalcogenides with ultralow thermal conductivity is extremely important but very challenging for promoting the efficiencies of thermoelectric (TE) materials. Herein, a new type of salt-inclusion chalcogenide (SIC), [Rb6Cl][RE23Mn7Se44] (RE = Ho-Yb), was discovered via a modified flux method. They possessed [RESe6] and [MSe6] (M = RE/Mn) octahedra as basic building units, which interlinked to form a three-dimensional quasi-NaCl-type [RE23Mn7Se44]5- host framework, where the [Rb6Cl]5+ guest ions resided. Interestingly, these isomorphic compounds showed ultralow thermal conductivities (0.28-0.37 W m-1 K-1) at 673 K, which are reported for the first time in SICs. This work not only enriches SIC chemistry but also broadens the application of SICs in the TE field.
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Affiliation(s)
- Hong Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
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37
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Qi J, Dong B, Zhang Z, Zhang Z, Chen Y, Zhang Q, Danilkin S, Chen X, He J, Fu L, Jiang X, Chai G, Hiroi S, Ohara K, Zhang Z, Ren W, Yang T, Zhou J, Osami S, He J, Yu D, Li B, Zhang Z. Dimer rattling mode induced low thermal conductivity in an excellent acoustic conductor. Nat Commun 2020; 11:5197. [PMID: 33060588 PMCID: PMC7566455 DOI: 10.1038/s41467-020-19044-w] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 09/28/2020] [Indexed: 11/20/2022] Open
Abstract
A solid with larger sound speeds usually exhibits higher lattice thermal conductivity. Here, we report an exception that CuP2 has a quite large mean sound speed of 4155 m s−1, comparable to GaAs, but single crystals show very low lattice thermal conductivity of about 4 W m−1 K−1 at room temperature, one order of magnitude smaller than GaAs. To understand such a puzzling thermal transport behavior, we have thoroughly investigated the atomic structures and lattice dynamics by combining neutron scattering techniques with first-principles simulations. This compound crystallizes in a layered structure where Cu atoms forming dimers are sandwiched in between P atomic networks. In this work, we reveal that Cu atomic dimers vibrate as a rattling mode with frequency around 11 meV, which is manifested to be remarkably anharmonic and strongly scatters acoustic phonons to achieve the low lattice thermal conductivity. CuP2 has a puzzling thermal transport behavior, with low thermal conductivity but quite large mean sound speeds. Here, the authors conduct a systematical study of the atomic structure and lattice dynamics of CuP2 to reveal the origin, finding a dimer rattling behavior.
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Affiliation(s)
- Ji Qi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Baojuan Dong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Zhe Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Zhao Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Yanna Chen
- Synchrontron X-ray station at SPring-8, Research Network and Facility Services Division, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-Cho, Sayo-Gun, Hyogo, 679-5148, Japan
| | - Qiang Zhang
- Spallation Neutron Source, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Sergey Danilkin
- Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee, DC, NSW 2232, Australia
| | - Xi Chen
- Department of Mechanical Engineering, University of Texas at Austin, Austin, TX, 78712, USA.,Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Jiaming He
- Department of Mechanical Engineering, University of Texas at Austin, Austin, TX, 78712, USA
| | - Liangwei Fu
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518005, China
| | - Xiaoming Jiang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Guozhi Chai
- Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Satoshi Hiroi
- Synchrontron X-ray station at SPring-8, Research Network and Facility Services Division, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-Cho, Sayo-Gun, Hyogo, 679-5148, Japan
| | - Koji Ohara
- SPring-8, Diffraction and Scattering Division, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-Cho, Sayo-Gun, Hyogo, 679-5198, Japan
| | - Zongteng Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Weijun Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Jianshi Zhou
- Department of Mechanical Engineering, University of Texas at Austin, Austin, TX, 78712, USA
| | - Sakata Osami
- Synchrontron X-ray station at SPring-8, Research Network and Facility Services Division, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-Cho, Sayo-Gun, Hyogo, 679-5148, Japan
| | - Jiaqing He
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518005, China
| | - Dehong Yu
- Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee, DC, NSW 2232, Australia.
| | - Bing Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China. .,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China.
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
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38
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Guo M, Guo F, Zhu J, Yin L, Zhang Q, Cai W, Sui J. Achieving High Thermoelectric Performance in Rare-Earth Element-Free CaMg 2Bi 2 with High Carrier Mobility and Ultralow Lattice Thermal Conductivity. RESEARCH 2020; 2020:5016564. [PMID: 32783029 PMCID: PMC7396126 DOI: 10.34133/2020/5016564] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2020] [Accepted: 07/09/2020] [Indexed: 11/27/2022]
Abstract
CaMg2Bi2-based compounds, a kind of the representative compounds of Zintl phases, have uniquely inherent layered structure and hence are considered to be potential thermoelectric materials. Generally, alloying is a traditional and effective way to reduce the lattice thermal conductivity through the mass and strain field fluctuation between host and guest atoms. The cation sites have very few contributions to the band structure around the fermi level; thus, cation substitution may have negligible influence on the electric transport properties. What is more, widespread application of thermoelectric materials not only desires high ZT value but also calls for low-cost and environmentally benign constituent elements. Here, Ba substitution on cation site achieves a sharp reduction in lattice thermal conductivity through enhanced point defects scattering without the obvious sacrifice of high carrier mobility, and thus improves thermoelectric properties. Then, by combining further enhanced phonon scattering caused by isoelectronic substitution of Zn on the Mg site, an extraordinarily low lattice thermal conductivity of 0.51 W m−1 K−1 at 873 K is achieved in (Ca0.75Ba0.25)0.995Na0.005Mg1.95Zn0.05Bi1.98 alloy, approaching the amorphous limit. Such maintenance of high mobility and realization of ultralow lattice thermal conductivity synergistically result in broadly improvement of the quality factor β. Finally, a maximum ZT of 1.25 at 873 K and the corresponding ZTave up to 0.85 from 300 K to 873 K have been obtained for the same composition, meanwhile possessing temperature independent compatibility factor. To our knowledge, the current ZTave exceeds all the reported values in AMg2Bi2-based compounds so far. Furthermore, the low-cost and environment-friendly characteristic plus excellent thermoelectric performance also make the present Zintl phase CaMg2Bi2 more competitive in practical application.
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Affiliation(s)
- Muchun Guo
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, China
| | - Fengkai Guo
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, China
| | - Jianbo Zhu
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, China
| | - Li Yin
- Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
| | - Qian Zhang
- Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
| | - Wei Cai
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, China
| | - Jiehe Sui
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, China
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39
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Klarbring J, Hellman O, Abrikosov IA, Simak SI. Anharmonicity and Ultralow Thermal Conductivity in Lead-Free Halide Double Perovskites. PHYSICAL REVIEW LETTERS 2020; 125:045701. [PMID: 32794779 DOI: 10.1103/physrevlett.125.045701] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2019] [Accepted: 05/22/2020] [Indexed: 06/11/2023]
Abstract
The lead-free halide double perovskite class of materials offers a promising venue for resolving issues related to toxicity of Pb and long-term stability of the lead-containing halide perovskites. We present a first-principles study of the lattice vibrations in Cs_{2}AgBiBr_{6}, the prototypical compound in this class and show that the lattice dynamics of Cs_{2}AgBiBr_{6} is highly anharmonic, largely in regards to tilting of AgBr_{6} and BiBr_{6} octahedra. Using an energy- and temperature-dependent phonon spectral function, we then show how the experimentally observed cubic-to-tetragonal phase transformation is caused by the collapse of a soft phonon branch. We finally reveal that the softness and anharmonicity of Cs_{2}AgBiBr_{6} yield an ultralow thermal conductivity, unexpected of high-symmetry cubic structures.
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Affiliation(s)
- Johan Klarbring
- Theoretical Physics Division, Department of Physics, Chemistry and Biology (FIM), Linköping University, SE-581 83 Linköping, Sweden
| | - Olle Hellman
- Theoretical Physics Division, Department of Physics, Chemistry and Biology (FIM), Linköping University, SE-581 83 Linköping, Sweden
| | - Igor A Abrikosov
- Theoretical Physics Division, Department of Physics, Chemistry and Biology (FIM), Linköping University, SE-581 83 Linköping, Sweden
- Materials Modeling and Development Laboratory, National University of Science and Technology (NUST) "MISIS", 119049 Moscow, Russia
| | - Sergei I Simak
- Theoretical Physics Division, Department of Physics, Chemistry and Biology (FIM), Linköping University, SE-581 83 Linköping, Sweden
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40
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Ma N, Li YY, Chen L, Wu LM. α-CsCu5Se3: Discovery of a Low-Cost Bulk Selenide with High Thermoelectric Performance. J Am Chem Soc 2020; 142:5293-5303. [DOI: 10.1021/jacs.0c00062] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Ni Ma
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
| | - Yan-Yan Li
- Key Laboratory of Theoretical and Computational Chemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
| | - Ling Chen
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
| | - Li-Ming Wu
- Key Laboratory of Theoretical and Computational Chemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
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41
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Suwardi A, Hu L, Wang X, Tan XY, Repaka DVM, Wong LM, Ni X, Liew WH, Lim SH, Yan Q, Xu J, Zheng Y, Hippalgaonkar K. Origin of High Thermoelectric Performance in Earth-Abundant Phosphide-Tetrahedrite. ACS APPLIED MATERIALS & INTERFACES 2020; 12:9150-9157. [PMID: 31995360 DOI: 10.1021/acsami.9b17269] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Phosphide-based thermoelectrics are a relatively less studied class of compounds, primarily due to the presence of light elements, which result in high thermal conductivity and inherent stability problems. In this work, we present a stable phosphide-tetrahedrite, Ag6Ge10P12, which possesses the highest zT (∼0.7) among all known phosphides at intermediate temperatures (750 K). We examine the intrinsic electronic and thermal transport properties of this compound by expressing the transport properties in terms of weighted mobility (μW), transport coefficient (σE0), and material quality factor (B), from which we are able to elucidate that the origin of its high zT can be attributed to the platelike Fermi surface and high level of band multiplicity related to its complex band structure. Finally, we discuss the origin of the low lattice thermal conductivity observed in this compound using experimental sound velocity, elastic properties, and Debye-Callaway model, thus laying the foundation for similar stable phosphides as potentially earth-abundant and nontoxic intermediate-temperature thermoelectric materials.
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Affiliation(s)
- Ady Suwardi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
| | - Lei Hu
- School of Material Science and Engineering , Nanyang Technological University , Singapore 639798
| | - Xizu Wang
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
| | - Xian Yi Tan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
- School of Material Science and Engineering , Nanyang Technological University , Singapore 639798
| | - Durga Venkata Maheswar Repaka
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
| | - Lai-Mun Wong
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
| | - Xiping Ni
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
| | - Weng Heng Liew
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
| | - Su Hui Lim
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
| | - Qingyu Yan
- School of Material Science and Engineering , Nanyang Technological University , Singapore 639798
| | - Jianwei Xu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , Singapore 117543
| | - Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education , Jianghan University , Wuhan 430056 , China
| | - Kedar Hippalgaonkar
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research , #08-03, 2 Fusionopolis Way , Singapore 138634
- School of Material Science and Engineering , Nanyang Technological University , Singapore 639798
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42
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Li X, Liu PF, Zhao E, Zhang Z, Guidi T, Le MD, Avdeev M, Ikeda K, Otomo T, Kofu M, Nakajima K, Chen J, He L, Ren Y, Wang XL, Wang BT, Ren Z, Zhao H, Wang F. Ultralow thermal conductivity from transverse acoustic phonon suppression in distorted crystalline α-MgAgSb. Nat Commun 2020; 11:942. [PMID: 32071303 PMCID: PMC7029039 DOI: 10.1038/s41467-020-14772-5] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2019] [Accepted: 01/24/2020] [Indexed: 11/08/2022] Open
Abstract
Low thermal conductivity is favorable for preserving the temperature gradient between the two ends of a thermoelectric material, in order to ensure continuous electron current generation. In high-performance thermoelectric materials, there are two main low thermal conductivity mechanisms: the phonon anharmonic in PbTe and SnSe, and phonon scattering resulting from the dynamic disorder in AgCrSe2 and CuCrSe2, which have been successfully revealed by inelastic neutron scattering. Using neutron scattering and ab initio calculations, we report here a mechanism of static local structure distortion combined with phonon-anharmonic-induced ultralow lattice thermal conductivity in α-MgAgSb. Since the transverse acoustic phonons are almost fully scattered by the compound's intrinsic distorted rocksalt sublattice, the heat is mainly transported by the longitudinal acoustic phonons. The ultralow thermal conductivity in α-MgAgSb is attributed to its atomic dynamics being altered by the structure distortion, which presents a possible microscopic route to enhance the performance of similar thermoelectric materials.
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Affiliation(s)
- Xiyang Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Department of Physics, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Peng-Fei Liu
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Enyue Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Zhigang Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Tatiana Guidi
- ISIS facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX, Oxfordshire, UK
| | - Manh Duc Le
- ISIS facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX, Oxfordshire, UK
| | - Maxim Avdeev
- Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW, 2234, Australia
| | - Kazutaka Ikeda
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki, 305-0801, Japan
| | - Toshiya Otomo
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki, 305-0801, Japan
| | - Maiko Kofu
- Japan Proton Accelerator Research Complex, Japan Atomic Energy Agency, Tokai, Ibaraki, 319-1195, Japan
| | - Kenji Nakajima
- Japan Proton Accelerator Research Complex, Japan Atomic Energy Agency, Tokai, Ibaraki, 319-1195, Japan
| | - Jie Chen
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Lunhua He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Yang Ren
- X-ray Science Division, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Xun-Li Wang
- Department of Physics, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China
| | - Bao-Tian Wang
- Spallation Neutron Source Science Center, Dongguan, 523803, China.
| | - Zhifeng Ren
- Department of Physics and TcSUH, University of Houston, Houston, Texas, 77204, USA.
| | - Huaizhou Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Fangwei Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China.
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43
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Guo M, Guo F, Zhu J, Yin L, Qin H, Zhang Q, Cai W, Sui J. Enhanced Thermoelectric Properties of p-Type CaMg 2Bi 2 via a Synergistic Effect Originated from Zn and Alkali-Metal Co-doping. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6015-6021. [PMID: 31913592 DOI: 10.1021/acsami.9b22333] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Bi-based Zintl phase CaMg2Bi2 is a promising thermoelectric material. Here, we report that the high-concentration point defects induced by equivalent Zn doping on the Mg site significantly enhance phonon scattering and then suppress lattice thermal conductivity by 50% at room temperature. Subsequently, partial substitution of divalent calcium ions with alkali-ion doping (Li, Na, K) not only optimizes the electrical transport properties by increasing the carrier concentration but also further reduces the lattice thermal conductivity through crystal disorder. Finally, the synergistic effect of Zn and Li co-doping leads to a high ZT of ∼1.0 at 873 K and an average ZT of 0.6 between 300 and 873 K for Ca0.995Li0.005Mg1.9Zn0.1Bi1.98. This work demonstrates an instructive method to reduce the lattice thermal conductivity via doping at the Mg site, which has never been reported in the CaMg2Bi2 system. Moreover, high-performance Ca0.995Li0.005Mg1.9Zn0.1Bi1.98 alloy does not contain any toxic elements and expensive rare earth elements, which is of great significance for the development of environment-friendly thermoelectric materials.
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Affiliation(s)
- Muchun Guo
- National Key Laboratory for Precision Hot Processing of Metals , Harbin Institute of Technology , Harbin 150001 , China
| | - Fengkai Guo
- National Key Laboratory for Precision Hot Processing of Metals , Harbin Institute of Technology , Harbin 150001 , China
| | - Jianbo Zhu
- National Key Laboratory for Precision Hot Processing of Metals , Harbin Institute of Technology , Harbin 150001 , China
| | - Li Yin
- Department of Materials Science and Engineering , Harbin Institute of Technology , Shenzhen , Guangdong 518055 , China
| | - Haixu Qin
- National Key Laboratory for Precision Hot Processing of Metals , Harbin Institute of Technology , Harbin 150001 , China
| | - Qian Zhang
- Department of Materials Science and Engineering , Harbin Institute of Technology , Shenzhen , Guangdong 518055 , China
| | - Wei Cai
- National Key Laboratory for Precision Hot Processing of Metals , Harbin Institute of Technology , Harbin 150001 , China
| | - Jiehe Sui
- National Key Laboratory for Precision Hot Processing of Metals , Harbin Institute of Technology , Harbin 150001 , China
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44
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Xiao Y, Wu Y, Nan P, Dong H, Chen Z, Chen Z, Gu H, Ge B, Li W, Pei Y. Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in n-PbTe0.75Se0.25. Chem 2020. [DOI: 10.1016/j.chempr.2020.01.002] [Citation(s) in RCA: 37] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
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Jiang Y, Jia F, Chen L, Wu LM. Cu 4Bi 4Se 9: A Thermoelectric Symphony of Rattling, Anharmonic Lone-pair, and Structural Complexity. ACS APPLIED MATERIALS & INTERFACES 2019; 11:36616-36625. [PMID: 31507161 DOI: 10.1021/acsami.9b11115] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Thermoelectric technology, enabling an environmentally friendly direct heat to electricity conversion, provides a possible alternative energy solution. To obtain a higher thermoelectric conversion efficiency, a larger dimensionless figure of merit ZT is required, which is, however, very difficult owing to the mutually restricted and even reversely correlated key property parameters. Herein, we report for the first time the thermoelectric properties of novel Cu4Bi4S9 and Cu4Bi4Se9 materials with complicated orthorhombic Pnma structures. Cu4Bi4Se9 exhibits an extremely low lattice thermal conductivity of about 0.29-0.35 W m-1 K-1 that is mainly ascribed to the high lattice anharmonicity coming from the synergistic effect of the crystal structure complexity, soft Cu-Se bonds with lower bonding energy, rattling of the Cu atoms, and the high anharmonicity of Bi atoms carrying stereochemically active lone-pair electrons. In spite of its poor electrical conductivity of 7.33 S cm-1, Cu4Bi4Se9 realizes a power factor of about 1.37 μW cm-1 K-2 at ∼530 K, and a figure of merit, ZT ∼0.24 at ∼530 K. Such a value is comparable with those of the Cu/Ag-Bi/Sb-S/Se-based ternary compounds, particularly, the 19 times higher ZT improvement with respect to the isostructural Cu4Bi4S9 suggests that the enhancing factors mentioned above play significant roles.
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46
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Ren T, Han Z, Ying P, Li X, Li X, Lin X, Sarker D, Cui J. Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu-In-Te Systems. ACS APPLIED MATERIALS & INTERFACES 2019; 11:32192-32199. [PMID: 31442031 DOI: 10.1021/acsami.9b12256] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Thermoelectric materials are of imperative need on account of the worldwide energy crisis. However, their efficiency is limited by the interplay of high electrical and lower thermal conductivities, that is, the figure of merit (ZT). Owing to their unique crystal structures, Cu-In-Te-based chalcogenides are suitable for both and thus have attracted much attention recently as potential thermoelectrics. Here we explore a newly developed Cu-In-Te derivative compound Cu3.52In4.16Te8. With a proper adjustment of Cu2Te doping, this material shows an ultralow lattice thermal conductivity (κL) (0.3 WK-1m-1) and, consequently, a figure of merit (ZT) as high as 1.65(±0.15) at 815 K: the highest value reported for p-type Cu-In-Te to date. The reduction in κL is directly related to the alteration of local symmetry around the interstitial Te, resulting in an effectively optimized phonon transport through localized "rattling" of the same. Although the Hall carrier concentration reduces upon Cu2Te addition due to the unpinning of the Fermi level (EFermi) toward the conduction band minimum, the power factor remains stable. The knowledge depicted here not only demonstrates the potential of Cu3.52In4.16Te8-based alloys as a promising TE, but also provides guidelines for developing further high-performance thermoelectric materials by enhancing the electronic conductivity.
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Affiliation(s)
- Ting Ren
- School of Materials and Chemical Engineering , Ningbo University of Technology , Ningbo 315211 , China
- School of Materials Science and Engineering , China University of Mining and Technology , Xuzhou 221116 , China
| | - Zhongkang Han
- Division of Interfacial Water and Key laboratory of Interfacial Physics and Technology , Shanghai Institute of Applied Physics, Chinese Academy of Sciences , Shanghai , 201800 , China
| | - Pengzhan Ying
- School of Materials Science and Engineering , China University of Mining and Technology , Xuzhou 221116 , China
| | - Xie Li
- School of Materials and Chemical Engineering , Ningbo University of Technology , Ningbo 315211 , China
| | - Xiaoyan Li
- Division of Interfacial Water and Key laboratory of Interfacial Physics and Technology , Shanghai Institute of Applied Physics, Chinese Academy of Sciences , Shanghai , 201800 , China
| | - Xinyi Lin
- Department of Mechanical Engineering and Materials Science , Duke University , Durham , North Carolina 27708 , United States
| | - Debalaya Sarker
- Theory Department , Fritz-Haber Institute of the Max Planck Society , Faradayweg 4-6 , Berlin 14195 , Germany
| | - Jiaolin Cui
- School of Materials and Chemical Engineering , Ningbo University of Technology , Ningbo 315211 , China
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Shi X, Sun C, Bu Z, Zhang X, Wu Y, Lin S, Li W, Faghaninia A, Jain A, Pei Y. Revelation of Inherently High Mobility Enables Mg 3Sb 2 as a Sustainable Alternative to n-Bi 2Te 3 Thermoelectrics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1802286. [PMID: 31453051 PMCID: PMC6702648 DOI: 10.1002/advs.201802286] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/18/2018] [Revised: 05/29/2019] [Indexed: 06/10/2023]
Abstract
Over the past years, thermoelectric Mg3Sb2 alloys particularly in n-type conduction, have attracted increasing attentions for thermoelectric applications, due to the multivalley conduction band, abundance of constituents, and less toxicity. However, the high vapor pressure, causticity of Mg, and the high melting point of Mg3Sb2 tend to cause the inclusion in the materials of boundary phases and defects that affect the transport properties. In this work, a utilization of tantalum-sealing for melting enables n-type Mg3Sb2 alloys to show a substantially higher mobility than ever reported, which can be attributed to the purification of phases and to the coarse grains. Importantly, the inherently high mobility successfully enables the thermoelectric figure of merit in optimal compositions to be highly competitive to that of commercially available n-type Bi2Te3 alloys and to be higher than that of other known n-type thermoelectrics at 300-500 K. This work reveals Mg3Sb2 alloys as a top candidate for near-room-temperature thermoelectric applications.
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Affiliation(s)
- Xuemin Shi
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
| | - Cheng Sun
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
| | - Zhonglin Bu
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
| | - Xinyue Zhang
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
| | - Yixuan Wu
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
| | - Siqi Lin
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
| | - Wen Li
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
| | | | - Anubhav Jain
- Lawrence Berkeley National Laboratory1 Cyclotron RoadBerkeleyCA94720USA
| | - Yanzhong Pei
- Interdisciplinary Materials Research CenterSchool of Materials Science and EngineeringTongji University4800 Caoan RoadShanghai201804China
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48
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Li J, Zhou Y, Hao S, Zhang T, Wolverton C, Zhao J, Zhao LD. Thermoelectric Material SnPb 2Bi 2S 6: The 4,4L Member of Lillianite Homologous Series with Low Lattice Thermal Conductivity. Inorg Chem 2019; 58:1339-1348. [PMID: 30596247 DOI: 10.1021/acs.inorgchem.8b02899] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Although the binary sulfides Bi2S3, PbS, and SnS have attracted extensive interest as thermoelectric materials, no quaternary sulfides containing Sn/Pb/Bi/S elements have been reported. Herein, we report the synthesis of a new quaternary sulfide, SnPb2Bi2S6, which crystallizes in the orthorhombic space group Pnma with unit cell parameters of a = 20.5458(12) Å, b = 4.0925(4) Å, c = 13.3219(10) Å. SnPb2Bi2S6 has a lillianite-type crystal structure consisting of two alternately aligned NaCl-type structural motifs separated by a mirror plane of PbS7 monocapped trigonal prisms. In the lillianite homologous series, SnPb2Bi2S6 can be classified as 4,4L, where the superscripted numbers indicate the maximum numbers of edge-sharing octahedra in the two adjacent NaCl-shaped slabs along the diagonal direction. The obtained SnPb2Bi2S6 phase exhibited good thermal stability up to 1000 K and n-type degenerate semiconducting behavior, with a power factor of 3.7 μW cm-1 K-2 at 773 K. Notably, this compound exhibited a very low lattice thermal conductivity of 0.69-0.92 W m-1 K-1 at 300-1000 K. Theoretical calculations revealed that the low thermal conductivity is caused by the complex crystal structure and the related elastic properties of a low Debye temperature, low phonon velocity, and large Grüneisen parameters. A reasonable figure of merit (ZT) of ∼0.3 was obtained at 770 K.
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Affiliation(s)
- Jingpeng Li
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Yiming Zhou
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
| | - Shiqiang Hao
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Tianyan Zhang
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Chris Wolverton
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Jing Zhao
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Li-Dong Zhao
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
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49
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Ma N, Jia F, Xiong L, Chen L, Li YY, Wu LM. CsCu 5S 3: Promising Thermoelectric Material with Enhanced Phase Transition Temperature. Inorg Chem 2019; 58:1371-1376. [PMID: 30620570 DOI: 10.1021/acs.inorgchem.8b02919] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Cu2S, featuring low cost, nontoxicity, and earth abundance, has been recently recognized as a high efficiency thermoelectric (TE) material. However, before reaching the maximum of the figure of merit ( ZT), Cu2S undergoes three phase transformations starting at 370 K, which give rise to severe problems, such as possible decomposition and low reliability. Herein, we discover CsCu5S3 with phase transformation at 823 K, which is significantly higher than the 370 K value of Cu2S. Single crystal diffraction data reveal that its two phases are constructed by the same Cu4S4 columnar building unit via propagating either at the opposite sides into a layered o-CsCu5S3, or at the four apexes into a 3D t-CsCu5S3, respectively. Interestingly, the o-to- t transformation is quick, but the reverse one is relatively slow. Theoretical studies reveal that the Cu4S4 column exhibits not only the most condensed atomic aggregation ( Dcolumn) but also the lightest effective mass ( m*), along which higher σ is realized. More interestingly, both phases exhibit remarkable ZT enhancements, 0.46 at 800 K for o-CsCu5S3, and 0.56 at 875 K for t-CsCu5S3, which are 170% and 175% that of Cu2S at the same temperature.
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Affiliation(s)
- Ni Ma
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Fei Jia
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Lin Xiong
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Ling Chen
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Yan-Yan Li
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Li-Ming Wu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , People's Republic of China
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50
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Peng B, Mei H, Zhang H, Shao H, Xu K, Ni G, Jin Q, Soukoulis CM, Zhu H. High thermoelectric efficiency in monolayer PbI2 from 300 K to 900 K. Inorg Chem Front 2019. [DOI: 10.1039/c8qi01297k] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Abstract
By using a first-principles approach, monolayer PbI2 is found to have great potential in thermoelectric applications.
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Affiliation(s)
- Bo Peng
- Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)
- Fudan University
- Shanghai 200433
- China
| | - Haodong Mei
- Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)
- Fudan University
- Shanghai 200433
- China
| | - Hao Zhang
- Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)
- Fudan University
- Shanghai 200433
- China
- Department of Physics and Astronomy and Ames Laboratory
| | - Hezhu Shao
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo 315201
- China
| | - Ke Xu
- Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)
- Fudan University
- Shanghai 200433
- China
| | - Gang Ni
- Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)
- Fudan University
- Shanghai 200433
- China
| | - Qingyuan Jin
- Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)
- Fudan University
- Shanghai 200433
- China
| | - Costas M. Soukoulis
- Department of Physics and Astronomy and Ames Laboratory
- Iowa State University
- Ames
- USA
- Institute of Electronic Structure and Laser (IESL)
| | - Heyuan Zhu
- Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)
- Fudan University
- Shanghai 200433
- China
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