Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors

Surfactant Micelle-Driven High-Efficiency and High-Resolution Length Separation of Carbon Nanotubes for Electronic Applications

High-efficiency extraction of long single-wall carbon nanotubes (SWCNTs) with excellent optoelectronic properties from SWCNT solution is critical for enabling their application in high-performance optoelectronic devices. Here, a straightforward and high-efficiency method is reported for length separation of SWCNTs by modulating the concentrations of binary surfactants. The results demonstrate that long SWCNTs can spontaneously precipitate for binary-surfactant but not for single-surfactant systems. This effect is attributed to the formation of compound micelles by binary surfactants that squeeze the free space of long SWCNTs due to their large excluded volumes. With this technique, it can readily separate near-pure long (≥500 nm in length, 99% in content) and short (≤500 nm in length, 98% in content) SWCNTs with separation efficiencies of 26% and 64%, respectively, exhibiting markedly greater length resolution and separation efficiency than those of previously reported methods. Thin-film transistors fabricated from extracted semiconducting SWCNTs with lengths >500 nm exhibit significantly improved electrical properties, including a 10.5-fold on-state current and 14.7-fold mobility, compared with those with lengths <500 nm. The present length separation technique is perfectly compatible with various surfactant-based methods for structure separations of SWCNTs and is significant for fabrication of high-performance electronic and optoelectronic devices.

Molecular Doping Modulation and Applications of Structure-Sorted Single-Walled Carbon Nanotubes: A Review

Single-walled carbon nanotubes (SWCNTs) that have a reproducible distribution of chiralities or single chirality are among the most competitive materials for realizing post-silicon electronics. Molecular doping, with its non-destructive and fine-tunable characteristics, is emerging as the primary doping approach for the structure-controlled SWCNTs, enabling their eventual use in various functional devices. This review provides an overview of important advances in the area of molecular doping of structure-controlled SWCNTs and their applications. The first part introduces the underlying physical process of molecular doping, followed by a comprehensive survey of the commonly used dopants for SWCNTs to date. Then, it highlights how the convergence of molecular doping and structure-sorting strategies leads to significantly improved functionality of SWCNT-based field-effect transistor arrays, transparent electrodes in optoelectronics, thermoelectrics, and many emerging devices. At last, several challenges and opportunities in this field are discussed, with the hope of shedding light on promoting the practical application of SWCNTs in future electronics.

Subthreshold Schottky-contacted carbon nanotube network film field-effect transistors for ultralow-power electronic applications

Ultralow-power electronics is critical to wearable, portable, and implantable applications where the systems could only have access to very limited electrical power supply or even be self-powered. Here, we report on a type of Schottky barrier (SB) contacted single-walled carbon nanotube (SWCNT) network film field-effect-transistors (FETs) that are operated in the subthreshold region to achieve ultralow-power applications. The thin high-k gate dielectric and the overlap between the gate and the source electrodes offer highly efficient gate electrostatic control over the SWCNT channel and the SB at the source contact, resulting in steep subthreshold switching characteristics with a small subthreshold swing (∼67 mV dec^-1), a large current on/off ratio (∼10⁶), and a low off-state current (∼0.5 pA). Ap-channel metal-oxide-semiconductor inverter built with the subthreshold SB-SWCNT-FETs exhibits a well-defined logic functionality and small-signal amplification capability under a low supply voltage (∼0.5 V) and an ultralow power (∼0.05 pWμm^-1). The low-voltage and deep subthreshold operations reported here could lay an essential foundation for high-performance and ultralow-power SWCNTs-based electronics.

High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates

The major limitations of solution-processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully-printed narrow-channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In₂ O₃ nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In₂ O₃ layer and thereby obtain near-vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈10⁶ and simultaneous maximum current density of 172 µA µm^-1 . Next, the depletion-load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of V_DD = 2 V. In addition, the near-vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.

Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors

Electrolyte-gated transistors (EGTs) hold great promise for next-generation printed logic circuitry, biocompatible integrated sensors, and neuromorphic devices. However, EGT-based complementary circuits with high voltage gain and ultralow driving voltage (<0.5 V) are currently unrealized, because achieving balanced electrical output for both the p- and n-type EGT components has not been possible with current materials. Here we report high-performance EGT complementary circuits containing p-type organic electrochemical transistors (OECTs) fabricated with an ion-permeable organic semiconducting polymer (DPP-g2T) and an n-type electrical double-layer transistor (EDLT) fabricated with an ion-impermeable inorganic indium-gallium-zinc oxide (IGZO) semiconductor. Adjusting the IGZO composition enables tunable EDLT output which, for In:Ga:Zn = 10:1:1 at%, balances that of the DPP-g2T OECT. The resulting hybrid electrolyte-gated inverter (HCIN) achieves ultrahigh voltage gains (>110) under a supply voltage of only 0.7 V. Furthermore, NAND and NOR logic circuits on both rigid and flexible substrates are realized, enabling not only excellent logic response with driving voltages as low as 0.2 V but also impressive mechanical flexibility down to 1-mm bending radii. Finally, the HCIN was applied in electrooculographic (EOG) signal monitoring for recording eye movement, which is critical for the development of wearable medical sensors and also interfaces for human-computer interaction; the high voltage amplification of the present HCIN enables EOG signal amplification and monitoring in which a small ∼1.5 mV signal is amplified to ∼30 mV.

Layer-By-Layer Printing Strategy for High-Performance Flexible Electronic Devices with Low-Temperature Catalyzed Solution-Processed SiO2

Additive printing techniques have been widely investigated for fabricating multilayered electronic devices. In this work, a layer-by-layer printing strategy is developed to fabricate multilayered electronics including 3D conductive circuits and thin-film transistors (TFTs) with low-temperature catalyzed, solution-processed SiO₂ (LCSS) as the dielectric. Ultrafine, ultrasmooth LCSS films can be facilely formed at 90 °C on a wide variety of organic and inorganic substrates, offering a versatile platform to construct complex heterojunction structures with layer-by-layer fashion at microscale. The high-resolution 3D conductive circuits formed with gold nanoparticles inside the LCSS dielectric demonstrate a high-speed response to the transient voltage in less than 1 µs. The TFTs with semiconducting single-wall carbon nanotubes can be operated with the accumulation mode at a low voltage of 1 V and exhibit average field-effect mobility of 70 cm²  V^-1  s^-1 , on/off ratio of 10⁷ , small average hysteresis of 0.1 V, and high yield up to 100% as well as long-term stability, high negative-gate bias stability, and good mechanical stability. Therefore, the layer-by-layer printing strategy with the LCSS film is promising to assemble large-scale, high-resolution, and high-performance flexible electronics and to provide a fundamental understanding for correlating dielectric properties with device performance.

Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics

The development of ultralow-power and easy-to-fabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deep-subthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/μm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.

Overcoming Electrochemical Instabilities of Printed Silver Electrodes in All-Printed Ion Gel Gated Carbon Nanotube Thin-Film Transistors

Silver ink is the most widely used conductive material for printing electrodes in the fabrication of all-printed ion gel gated transistors because of their high conductivity and low cost. However, electrochemical instability of printed silver electrodes is generally one of the biggest issues, whether it is in air where silver gets oxidized or in a moisture environment where electrochemical migration occurs. Notwithstanding, the electrochemical stability of printed silver electrodes in ion gel medium has not been studied so far. In this work, we studied the electrochemical instabilities of printed silver electrodes in fully printed ion gel gated single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) and developed some strategies to overcome these issues. All-printed ion gel-based p-type SWCNT TFTs were employed to investigate the impact of electrochemical instabilities on the electrical behavior of printed SWCNT TFTs. The results have demonstrated that printed silver was unstable at anodic and cathodic polarization because of the corrosion by the ionic liquid. Besides, anodic corrosion of silver source/drain electrodes was shown to be responsible for the electrical failure of printed SWCNT TFTs in both the linear and saturated regime. These issues were completely resolved when preventing printed silver electrodes from coming into direct contact with ion gels. For example, ion gels were partially printed in device channels to avoid contacting the printed silver source and drain electrodes. At the same time, silver side-gate electrodes were replaced by inkjet-printed PEDOT:PSS electrodes to avoid gate electrode-related instabilities. Consequently, all-printed electrochemically stable SWCNT TFTs fabricated were obtained with enhanced performance of higher I_ON/I_OFF ratios (10⁵ to 10⁶), smaller subthreshold slopes (∼70 mV/dec), and smaller hysteresis (ΔV = 0.025 V) at gate voltages from 1.2 to -0.5 V. Additionally, the polarity of all-printed SWCNT TFTs was converted from the p-channel to ambipolar while achieving lower leakage currents.

Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes

Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for flexible and wearable electronics. However, it usually suffers from low semiconducting tube purity, low device yield, and the mismatch between p- and n-type TFTs. Here, we report low-voltage and high-performance digital and analog CNT TFT circuits based on high-yield (19.9%) and ultrahigh purity (99.997%) polymer-sorted semiconducting CNTs. Using high-uniformity deposition and pseudo-CMOS design, we demonstrated CNT TFTs with good uniformity and high performance at low operation voltage of 3 V. We tested forty-four 2-µm channel 5-stage ring oscillators on the same flexible substrate (1,056 TFTs). All worked as expected with gate delays of 42.7 ± 13.1 ns. With these high-performance TFTs, we demonstrated 8-stage shift registers running at 50 kHz and the first tunable-gain amplifier with 1,000 gain at 20 kHz. These results show great potentials of using solution-processed CNT TFTs for large-scale flexible electronics.

Optoelectronic Properties of Printed Photogating Carbon Nanotube Thin Film Transistors and Their Application for Light-Stimulated Neuromorphic Devices

Artificial synapses/neurons based on electronic/ionic hybrid devices have attracted wide attention for brain-inspired neuromorphic systems since it is possible to overcome the von Neumann bottleneck of the neuromorphic computing paradigm. Here, we report a novel photoneuromorphic device based on printed photogating single-walled carbon nanotube (SWCNT) thin film transistors (TFTs) using lightly n-doped Si as the gate electrode. The drain currents of the printed SWCNT TFTs can gradually increase to over 3000 times of their starting value after being pulsed with light stimulation, and the electrical signals can maintain for over 10 min. These characteristics are similar to the learning and memory functions of brain-inspired neuromorphic systems. The working mechanism of the light-stimulated neuromorphic devices is investigated and described here in detail. Important synaptic characteristics, such as low-pass filtering characteristics and nonvolatile memory ability, are successfully emulated in the printed light-stimulated artificial synapses. It demonstrates that the printed SWCNT TFT photoneuromorphic devices can act as the nonvolatile memory units and perform photoneuromorphic computing, which exhibits potential for future neuromorphic system applications.

Printed Thin-Film Transistors: Research from China

Thin-film transistors (TFTs) have experienced tremendous development during the past decades and show great promising applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFT components including semiconductors, dielectrics and electrodes, as well as fully printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed.

High-Throughput Fabrication of Flexible and Transparent All-Carbon Nanotube Electronics

This study reports a simple and effective technique for the high-throughput fabrication of flexible all-carbon nanotube (CNT) electronics using a photosensitive dry film instead of traditional liquid photoresists. A 10 in. sized photosensitive dry film is laminated onto a flexible substrate by a roll-to-roll technology, and a 5 µm pattern resolution of the resulting CNT films is achieved for the construction of flexible and transparent all-CNT thin-film transistors (TFTs) and integrated circuits. The fabricated TFTs exhibit a desirable electrical performance including an on-off current ratio of more than 105, a carrier mobility of 33 cm2 V-1 s-1, and a small hysteresis. The standard deviations of on-current and mobility are, respectively, 5% and 2% of the average value, demonstrating the excellent reproducibility and uniformity of the devices, which allows constructing a large noise margin inverter circuit with a voltage gain of 30. This study indicates that a photosensitive dry film is very promising for the low-cost, fast, reliable, and scalable fabrication of flexible and transparent CNT-based integrated circuits, and opens up opportunities for future high-throughput CNT-based printed electronics.

High-Performance Carbon Nanotube Complementary Electronics and Integrated Sensor Systems on Ultrathin Plastic Foil

The longtime vacancy of high-performance complementary metal-oxide-semiconductor (CMOS) technology on plastics is a non-negligible obstacle to the applications of flexible electronics with advanced functions, such as continuous health monitoring with in situ signal processing and wireless communication capabilities, in which high speed, low power consumption, and complex functionality are desired for integrated circuits (ICs). Here, we report the implementation of carbon nanotube (CNT)-based high-performance CMOS technology and its application for signal processing in an integrated sensor system for human body monitoring on ultrathin plastic foil with a thickness of 2.5 μm. The performances of both the p- and n-type CNT field-effect transistors (FETs) are excellent and symmetric on plastic foil with a low operation voltage of 2 V: width-normalized transconductances ( g_m/ W) as high as 4.69 μS/μm and 5.45 μS/μm, width-normalized on-state currents reaching 5.85 μA/μm and 6.05 μA/μm, and mobilities up to 80.26 cm²·V^-1·s^-1 and 97.09 cm²·V^-1·s^-1, respectively, together with a current on/off ratio of approximately 10⁵. The devices were mechanically robust, withstanding a curvature radius down to 124 μm. Utilizing these transistors, various high-performance CMOS digital ICs with rail-to-rail output and a ring oscillator on plastics with an oscillation frequency of 5 MHz were demonstrated. Furthermore, an ultrathin skin-mounted humidity sensor system with in situ frequency modulation signal processing capability was realized to monitor human body sweating.

Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage

Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec^-1 and ON/OFF ratio of 10⁶, which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10⁵) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

Directionally Aligned Amorphous Polymer Chains via Electrohydrodynamic-Jet Printing: Analysis of Morphology and Polymer Field-Effect Transistor Characteristics

Electrohydrodynamic-jet (EHD-jet) printing provides an opportunity to directly assembled amorphous polymer chains in the printed pattern. Herein, an EHD-jet printed amorphous polymer was employed as the active layer for fabrication of organic field-effect transistors (OFETs). Under optimized conditions, the field-effect mobility (μ_FET) of the EHD-jet printed OFETs was 5 times higher than the highest μ_FET observed in the spin-coated OFETs, and this improvement was achieved without the use of complex surface templating or additional pre- or post-deposition processing. As the chain alignment can be affected by the surface energy of the dielectric layer in EHD-jet printed OFETs, dielectric layers with varying wettability were examined. Near-edge X-ray absorption fine structure measurements were performed to compare the amorphous chain alignment in OFET active layers prepared by EHD-jet printing and spin coating.

An All-Solution-Based Hybrid CMOS-Like Quantum Dot/Carbon Nanotube Inverter

The development of low-cost, flexible electronic devices is subordinated to the advancement in solution-based and low-temperature-processable semiconducting materials, such as colloidal quantum dots (QDs) and single-walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high-performance complementary metal-oxide-semiconductor (CMOS)-like inverters is demonstrated. The n-type field effect transistors (FETs) based on I^- capped PbS QDs (V_th = 0.2 V, on/off = 10⁵ , S_S-th = 114 mV dec^-1 , µ_e = 0.22 cm² V^-1 s^-1 ) and the p-type FETs with tailored parameters based on low-density random network of SWCNTs (V_th = -0.2 V, on/off > 10⁵ , S_S-th = 63 mV dec^-1 , µ_h = 0.04 cm² V^-1 s^-1 ) are integrated on the same substrate in order to obtain high-performance hybrid inverters. The inverters operate in the sub-1 V range (0.9 V) and have high gain (76 V/V), large maximum-equal-criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV).

Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters

The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 10⁶, effective mobility up to 30 cm² V^-1 s^-1, small hysteresis, and small subthreshold swing (90-140 mV dec^-1), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 V_dd = 1 V) and a voltage gain as high as 30 (at V_dd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 μW at V_dd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.

Mechanisms and Materials of Flexible and Stretchable Skin Sensors

Wearable technology has attracted significant public attention and has generated huge societal and economic impact, leading to changes of both personal lifestyles and formats of healthcare. An important type of devices in wearable technology is flexible and stretchable skin sensors used primarily for biophysiological signal sensing and biomolecule analysis on skin. These sensors offer mechanical compatibility to human skin and maximum compliance to skin morphology and motion, demonstrating great potential as promising alternatives to current wearable electronic devices based on rigid substrates and packages. The mechanisms behind the design and applications of these sensors are numerous, involving profound knowledge about the physical and chemical properties of the sensors and the skin. The corresponding materials are diverse, featuring thin elastic films and unique stretchable structures based on traditional hard or ductile materials. In addition, the fabrication techniques that range from complementary metal-oxide semiconductor (CMOS) fabrication to innovative additive manufacturing have led to various sensor formats. This paper reviews mechanisms, materials, fabrication techniques, and representative applications of flexible and stretchable skin sensors, and provides perspective of future trends of the sensors in improving biomedical sensing, human machine interfacing, and quality of life.

Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.