High-Performance, Ultrathin, Ultraflexible Organic Thin-Film Transistor Array Via Solution Process

Breaking Fundamental Limitation of Flow-Induced Anisotropic Growth for Large-Scale and Fast Printing of Organic Single-Crystal Films

Advanced organic electronic technologies have put forward a pressing demand for cost-effective and high-throughput fabrication of organic single-crystal films (OSCFs). However, solution-printed OSCFs are typically plagued by the existence of abundant structural defects, which pose a formidable challenge to achieving large-scale and high-performance organic electronics. Here, it is elucidated that these structural defects are mainly originated from printing flow-induced anisotropic growth, an important factor that is overlooked for too long. In light of this, a surfactant-additive printing method is proposed to effectively overcome the anisotropic growth, enabling the deposition of uniform OSCFs over the wafer scale at a high speed of 1.2 mm s-1 at room temperature. The resulting OSCF exhibits appealing performance with a high average mobility up to 10.7 cm2 V-1 s-1, which is one of the highest values for flexible organic field-effect transistor arrays. Moreover, large-scale OSCF-based flexible logic circuits, which can be bent without degradation to a radius as small as 4.0 mm and over 1000 cycles are realized. The work provides profound insights into breaking the limitation of flow-induced anisotropic growth and opens new avenues for printing large-scale organic single-crystal electronics.

Submicron-Thickness Ultraflexible Organic Light-Emitting Diodes via a Photoregulated Stripping Strategy

With the rapid advances in imperceptible and epidermal electronics, the research on ultraflexible organic light-emitting diodes (OLEDs) has become increasingly significant, owing to their excellent flexibility and conformability to the human body. It is highly desirable to develop submicrometer-thick ultraflexible OLEDs to enable the devices to seamlessly conform to the surface of arbitrary-shaped objects and still function properly. However, it remains a huge challenge for currently reported OLEDs due to the lack of an appropriate stripping strategy. Here, for the first time, we develop a facile photoregulated stripping strategy for the fabrication of high-performance ultraflexible OLEDs with submicron thickness. Under ultraviolet (UV) irradiation, the surface adhesion force of the ultrathin photopolymer membrane can be adjusted from 16.9 to 5.1 N/m, thereby effectively controlling the laminating and detaching process. Based on this strategy, the resultant device thickness is as low as 0.821 μm, which is the lowest record among flexible OLEDs reported to date. More remarkably, excellent electrical properties with a maximum current efficiency (CE) of 62.5 cd/A, an external quantum efficiency (EQE) of 17.8%, and a low turn-on voltage of 2.5 V are realized, which are superior to almost all of the reported ultraflexible OLEDs with thicknesses below 10 μm. Based on versatile ultraflexible OLEDs, all-organic and skin-mounted displays are successfully realized by employing a conformable organic thin-film transistor (OTFT) as the driver. This work offers a feasible strategy for advancing OLEDs from flexible to ultraflexible, showing significant application potential in future epidermal electronics and conformal displays.

Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) have the advantages of low-cost, large-area processing and could be utilized in a variety of emerging applications. However, the generally large contact resistance (R_c) limits the integration and miniaturization of OFETs. The R_c is difficult to reduce due to an incompatibility between obtaining strong orbit coupling and the barrier height reduction. In this study, we developed an oxygen-induced barrier lowering strategy by introducing oxygen (O₂) into the nanointerface between the electrodes and organic semiconductors layer and achieved an ultralow channel width-normalized R_c (R_c·W) of 89.8 Ω·cm and a high mobility of 11.32 cm² V^-1 s^-1. This work demonstrates that O₂ adsorbed at the nanointerface of metal-semiconductor contact can significantly reduce the R_c from both experiments and theoretical simulations and provides guidance for the construction of high-performance OFETs, which is conducive to the integration and miniaturization of OFETs.

Nanocrystal Array Engineering and Optoelectronic Applications of Organic Small-Molecule Semiconductors

Organic small-molecule semiconductor materials have attracted extensive attention because of their excellent properties. Due to the randomness of crystal orientation and growth location, however, the preparation of continuous and highly ordered organic small-molecule semiconductor nanocrystal arrays still face more challenges. Compared to organic macromolecules, organic small molecules exhibit better crystallinity, and therefore, they exhibit better semiconductor performance. The formation of organic small-molecule crystals relies heavily on weak interactions such as hydrogen bonds, van der Waals forces, and π-π interactions, which are very sensitive to external stimuli such as mechanical forces, high temperatures, and organic solvents. Therefore, nanocrystal array engineering is more flexible than that of the inorganic materials. In addition, nanocrystal array engineering is a key step towards practical application. To resolve this problem, many conventional nanocrystal array preparation methods have been developed, such as spin coating, etc. In this review, the typical and recent progress of nanocrystal array engineering are summarized. It is the typical and recent innovations that the array of nanocrystal array engineering can be patterned on the substrate through top-down, bottom-up, self-assembly, and crystallization methods, and it can also be patterned by constructing a series of microscopic structures. Finally, various multifunctional and emerging applications based on organic small-molecule semiconductor nanocrystal arrays are introduced.

Role of time-dependent foreign molecules bonding in the degradation mechanism of polymer field-effect transistors in ambient conditions

Long-standing research efforts have enabled the widespread introduction of organic field-effect transistors (OFETs) in next-generation technologies. Concurrently, environmental and operational stability is the major bottleneck in commercializing OFETs. The underpinning mechanism behind these instabilities is still elusive. Here we demonstrate the effect of ambient air on the performance of p-type polymer field-effect transistors. After exposure to ambient air, the device showed significant variations in performance parameters for around 30 days, and then relatively stable behaviour was observed. Two competing mechanisms influencing environmental stability are the diffusion of moisture and oxygen in the metal-organic interface and the active organic layer of the OFET. We measured the time-dependent contact and channel resistances to probe which mechanism is dominant. We found that the dominant role in the degradation of the device stability is the channel resistance rather than the contact resistance. Through time-dependent Fourier transform infrared (FTIR) analysis, we systematically prove that moisture and oxygen cause performance variation in OFETs. FTIR spectra revealed that water and oxygen interact with the polymer chain and perturb its conjugation, thus resulting in degraded performance of the device upon prolonged exposure to ambient air. Our results are important in addressing the environmental instability of organic devices.

Organic thin-film transistors and related devices in life and health monitoring

The early determination of disease-related biomarkers can significantly improve the survival rate of patients. Thus, a series of explorations for new diagnosis technologies, such as optical and electrochemical methods, have been devoted to life and health monitoring. Organic thin-film transistor (OTFT), as a state-of-the-art nano-sensing technology, has attracted significant attention from construction to application owing to the merits of being label-free, low-cost, facial, and rapid detection with multi-parameter responses. Nevertheless, interference from non-specific adsorption is inevitable in complex biological samples such as body liquid and exhaled gas, so the reliability and accuracy of the biosensor need to be further improved while ensuring sensitivity, selectivity, and stability. Herein, we overviewed the composition, mechanism, and construction strategies of OTFTs for the practical determination of disease-related biomarkers in both body fluids and exhaled gas. The results show that the realization of bio-inspired applications will come true with the rapid development of high-effective OTFTs and related devices.

Electronic Supplementary Material

Supplementary material is available in the online version of this article at 10.1007/s12274-023-5606-1.

Design and 3D Printing of Stretchable Conductor with High Dynamic Stability

As an indispensable part of wearable devices and mechanical arms, stretchable conductors have received extensive attention in recent years. The design of a high-dynamic-stability, stretchable conductor is the key technology to ensure the normal transmission of electrical signals and electrical energy of wearable devices under large mechanical deformation, which has always been an important research topic domestically and abroad. In this paper, a stretchable conductor with a linear bunch structure is designed and prepared by combining numerical modeling and simulation with 3D printing technology. The stretchable conductor consists of a 3D-printed bunch-structured equiwall elastic insulating resin tube and internally filled free-deformable liquid metal. This conductor has a very high conductivity exceeding 10⁴ S cm^-1, good stretchability with an elongation at break exceeding 50%, and great tensile stability, with a relative change in resistance of only about 1% at 50% tensile strain. Finally, this paper demonstrates it as a headphone cable (transmitting electrical signals) and a mobile phone charging wire (transmitting electrical energy), which proves its good mechanical and electrical properties and shows good application potential.

How Do Colloidal Nanoparticles Move in a Solution under an Electric Field?: In Situ Light Scattering Analysis

Understanding the dynamics of colloidal nanoparticles (NPs) in a solution is the key to assembling them into solids through a solution process such as electrophoretic deposition. In this study, newly developed in situ analysis with light scattering is used to examine NP dynamics induced by a non-uniform electric field. We reveal that the symmetric directions of moving NP aggregates are due to dielectrophoresis between the cylindrical electrodes, while the actual NP deposition is based on the charge of NPs (electrophoresis). Over time, the symmetry of the dynamics becomes less evident, inducing feeble deposition as the less-ordered dynamics become stronger. Eventually, two separate deposition mechanisms emerge as the deposition rate decreases with the change in the NP dynamics. Furthermore, we identify the vortex-like NP motion between the electrodes. These in situ analyses provide insights into the electrophoretic deposition mechanism and NP behavior in a solution under an electric field for fine film construction.

Molecular-Switch-Embedded Solution-Processed Semiconductors

Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate a large number of transistor devices per unit area. This approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation. A huge number of research efforts have been attempted to demonstrate vertically stacked electronics in the last two decades. In this review, we revisit materials and devices for the vertically integrated electronics with an emphasis on the emerging semiconductor materials that can be processable by bottom-up fabrication methods, which are suitable for future flexible and wearable electronics. The vertically stacked integrated circuits are reviewed based on the semiconductor materials: organic semiconductors, carbon nanotubes, metal oxide semiconductors, and atomically thin two-dimensional materials including transition metal dichalcogenides. The features, device performance, and fabrication methods for 3D integration of the transistor based on each semiconductor are discussed. Moreover, we highlight recent advances that can be important milestones in the vertically integrated electronics including advanced integrated circuits, sensors, and display systems. There are remaining challenges to overcome; however, we believe that the vertical 3D integration based on emerging semiconductor materials and devices can be a promising strategy for future electronics.

Ultrathin Fiber-Mesh Polymer Thermistors

Flexible sensors enable on-skin and in-body health monitoring, which require flexible thermal protection circuits to prevent overheating and operate the devices safely. Here, ultrathin fiber-mesh polymer positive temperature coefficient (PTC) thermistors via electrospinning are developed. The fiber-type thermistors are composed of acrylate polymer and carbon nanofibers. The fibrous composite materials are coated with a parylene to form a core-sheath structure, which improves the repeatability of temperature characteristics. Approximately 5 µm thick fiber-type thermistors exhibit an increase in the resistance by three orders of magnitude within ≈2 °C and repeatable temperature characteristics for up to 400 cycles. The mesh structure enables the thermistor layer to be ultra-lightweight and transparent; the mesh-type thermistor operates with a fiber density of 16.5 µg cm^-2 , whose fiber layer has a transmittance of more than 90% in the 400-800 nm region. By fabricating the mesh thermistor on a 1.4 µm thick substrate, the thermistor operates without degradation when wrapped around a 280 µm radius needle. Furthermore, the gas-permeable property is demonstrated by fabricating the fibrous thermistor on a mesh substrate. The proposed ultrathin mesh polymer PTC thermistors form the basis for on-skin and implantable devices that are equipped with overheat prevention.

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

HIGHLIGHTS

A stable laminated Al₂O₃/HfO₂ insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al₂O₃/HfO₂ insulator. The flexible TFTs present the carrier mobilities of 9.7 cm² V⁻¹ s⁻¹, ON/OFF ratio of ~ 1.3 × 10⁶, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec⁻¹.

ABSTRACT

Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al₂O₃/HfO₂ insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In_0.37Ga_0.20Zn_0.18O_0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al₂O₃/HfO₂ nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al₂O₃, crystallized HfO₂, and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm² V⁻¹ s⁻¹, ON/OFF ratio of ~ 1.3 × 10⁶, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec⁻¹, signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%. [Image: see text]

SUPPLEMENTARY INFORMATION

The online version contains supplementary material available at 10.1007/s40820-022-00929-y.

Improving the Performance of Red Organic Light-Emitting Transistors by Utilizing a High-k Organic/Inorganic Bilayer Dielectric

Integration of electrical switching and light emission in a single unit makes organic light-emitting transistors (OLETs) highly promising multifunctional devices for next-generation active-matrix flat-panel displays and related applications. Here, high-performance red OLETs are fabricated in a multilayer configuration that incorporates a zirconia (ZrO_x)/cross-linked poly(vinyl alcohol) (C-PVA) bilayer as a dielectric. The developed organic/inorganic bilayer dielectric renders high dielectric constant as well as improved dielectric/semiconductor interface quality, contributing to enhanced carrier mobility and high current density. In addition, an efficient red phosphorescent organic emitter doped in a bihost system is employed as the emitting layer for an effective exciton formation and light generation. Consequently, our optimized red OLETs displayed a high brightness of 16 470 cd m^-2 and a peak external quantum efficiency of 11.9% under a low gate and source-drain voltage of -24 V. To further boost the device performance, an electron-blocking layer is introduced for ameliorated charge-carrier balance and hence suppressed exciton-charge quenching, which resulted in an improved maximum brightness of 20 030 cd m^-2. We anticipate that the new device optimization approaches proposed in this work would spur further development of efficient OLETs with high brightness and curtailed efficiency roll-off.

Development of Synthesis and Application of High Molecular Weight Poly(Methyl Methacrylate)

Poly(methyl methacrylate) (PMMA) is widely used in aviation, architecture, medical treatment, optical instruments and other fields because of its good transparency, chemical stability and electrical insulation. However, the application of PMMA largely depends on its physical properties. Mechanical properties such as tensile strength, fracture surface energy, shear modulus and Young’s modulus are increased with the increase in molecular weight. Consequently, it is of great significance to synthesize high molecular weight PMMA. In this article, we review the application of conventional free radical polymerization, atom transfer radical polymerization (ATRP) and coordination polymerization for preparing high molecular weight PMMA. The mechanisms of these polymerizations are discussed. In addition, applications of PMMA are also summarized.

High-Mobility Fungus-Triggered Biodegradable Ultraflexible Organic Transistors

Biodegradable organic field-effect transistors (OFETs) have drawn tremendous attention for potential applications such as green electronic skins, degradable flexible displays, and novel implantable devices. However, it remains a huge challenge to simultaneously achieve high mobility, stable operation and controllable biodegradation of OFETs, because most of the widely used biodegradable insulating materials contain large amounts of hydrophilic groups. Herein, it is firstly proposed fungal-degradation ultraflexible OFETs based on the crosslinked dextran (C-dextran) as dielectric layer. The crosslinking strategy effectively eliminates polar hydrophilic groups and improves water and solvent resistance of dextran dielectric layer. The device with spin-coated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor and C-dextran dielectric exhibits the highest mobility up to 7.72 cm² V^-1 s^-1 , which is higher than all the reported degradable OFETs. Additionally, the device still maintains high performance regardless of in an environment humidity up to 80% or under the extreme bending radius of 0.0125 mm. After completion of their mission, the device can be controllably biodegraded by fungi without any adverse environmental effects, promoting the natural ecological cycles with the concepts of "From nature, for nature". This work opens up a new avenue for realizing high-performance biodegradable OFETs, and advances the process of the "green" electrical devices in practical applications.

Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics

Scarcity of the antisolvent polymer dielectrics and their poor stability have significantly prevented solution-processed ultraflexible organic transistors from low-temperature, large-scale production for applications in low-cost skin-inspired electronics. Here, we present a novel low-temperature solution-processed PEI-EP polymer dielectric with dramatically enhanced thermal stability, humidity stability, and frequency stability compared with the conventional PVA/c-PVA and c-PVP dielectrics, by incorporating polyethyleneimine PEI as crosslinking sites in nonhydroxyl epoxy EP. The PEI-EP dielectric requires a very low process temperature as low as 70°C and simultaneously possesses the high initial decomposition temperature (340°C) and glass transition temperature (230°C), humidity-resistant dielectric properties, and frequency-independent capacitance. Integrated into the solution-processed C8-BTBT thin-film transistors, the PEI-EP dielectric enables the device stable operation in air within 2 months and in high-humidity environment from 20 to 100% without significant performance degradation. The PEI-EP dielectric transistor array also presents weak hysteresis transfer characteristics, excellent electrical performance with 100% operation rate, high mobility up to 7.98 cm² V^-1 s^-1 (1 Hz) and average mobility as high as 5.3 cm² V^-1 s^-1 (1 Hz), excellent flexibility with the normal operation at the bending radius down to 0.003 mm, and foldable and crumpling-resistant capability. These results reveal the great potential of PEI-EP polymer as dielectric of low-temperature solution-processed ultraflexible organic transistors and open a new strategy for the development and applications of next-generation low-cost skin electronics.

Effect of Variations in the Alkyl Chain Lengths of Self-Assembled Monolayers on the Crystalline-Phase-Mediated Electrical Performance of Organic Field-Effect Transistors

Self-assembled monolayers (SAMs) of organic molecules are frequently employed to improve the electrical performance of organic field-effect transistors (OFETs). However, the relationship between SAM properties and OFET performance has not been fully explored, leading to an incomplete understanding of the system. This study investigates the effect of the SAM alkyl chain length on the crystalline phase of pentacene films and OFET performance. Two types of SAMs-with alkyl chain lengths of 10 (decyltrichlorosilane, DTS) and 22 (docosyltrichlorosilane, DCTS)-were examined, and variations in the performance of pentacene-based OFETs with the nature of the SAM treatment were observed. Despite the similar surface morphologies of the pentacene films, field-effect mobility in the DCTS-treated OFET was twice that in the DTS-treated OFET. To find the reason underlying the dependence of the OFET's electrical performance on the SAM alkyl chain length, X-ray diffraction measurements were conducted, followed by a phase analysis of the pentacene films. Bulk and thin-film phases were observed to coexist in the pentacene film grown on DTS, indicating several structural defects in the film; this can help explain the dependence of the OFET electrical performance on the SAM alkyl chain length, mediated by the different crystalline phases of pentacene.

A sub-150-nanometre-thick and ultraconformable solution-processed all-organic transistor

Recent advancements in the field of electronics have paved the way to the development of new applications, such as tattoo electronics, where the employment of ultraconformable devices is required, typically achievable with a significant reduction in their total thickness. Organic materials can be considered enablers, owing to the possibility of depositing films with thicknesses at the nanometric scale, even from solution. However, available processes do not allow obtaining devices with thicknesses below hundreds of nanometres, thus setting a limit. Here, we show an all-organic field effect transistor that is less than 150 nm thick and that is fabricated through a fully solution-based approach. Such unprecedented thickness permits the device to conformally adhere onto nonplanar surfaces, such as human skin, and to be bent to a radius lower than 1 μm, thereby overcoming another limitation for field-effect transistors and representing a fundamental advancement in the field of ultrathin and tattoo electronics.

Bandgap Engineering of an Aryl-Fused Tetrathianaphthalene for Visible-Blind Organic Field-Effect Transistors

Stability problem of organic semiconductors (OSCs) because of photoabsorption has become a major barrier to large scale applications in organic field-effect transistors (OFETs). It is imperative to design OSCs which are insensitive to visible and near-infrared (VNIR) light to obtain both environmental and operational stability. Herein, taking a 2,3,8,9-tetramethoxy [1,4]benzodithiino[2,3-b][1,4]benzodithiine (TTN2) as an example, we show that controlling molecular configuration is an effective strategy to tune the bandgaps of OSCs for visible-blind OFETs. TTN2 adopts an armchair-like configuration, which is different from the prevailing planar structure of common OSCs. Because of the large bandgap, TTN2 exhibits no photoabsorption in the VNIR region and OFETs based on TTN2 show high environmental stability. The devices worked well after being stored in ambient air, (i.e. in the presence of oxygen and water) and light for over two years. Moreover, the OFETs show no observable response to light irradiation from 405–1,020 nm, which is also favorable for high operational stability.

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages of low dimension, simultaneous read-write operation and high efficiency. However, process compatibility and repeatability of these materials are still a big challenge, as well as other issues such as complex transfer process and material selectivity. In this work, synaptic transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple dip-coating process, which exhibited a high current switch ratio up to 10⁶, well off state as low as nearly 10^-12 A, and low operation voltage of -3 V. Moreover, various synaptic behaviors were successfully simulated including excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, and long-term depression. More importantly, under ultrathin conditions, excellent memory preservation, and linearity of weight update were obtained because of the enhanced effect of defects and improved controllability of the gate voltage on the ultrathin active layer, which led to a pattern recognition rate up to 85%. This is the first work to demonstrate that the pattern recognition rate, a crucial parameter for neuromorphic computing can be significantly improved by reducing the thickness of the channel layer. Hence, these results not only reveal a simple and effective way to improve plasticity and memory retention of the artificial synapse via thickness modulation but also expand the material selection for the 2D artificial synaptic devices.

Development of stretchable metallic glass electrodes

Stretchable electrodes are essential components for wearable electronics. However, the stretchability of the electrodes is often achieved with the sacrifice of electronic conductivity along with huge variation in resistance. In this work, stretchable metallic glass electrodes (MG-electrodes) that have both high electronic conductivity and excellent electronic stability are developed. The stretchability of the MG-electrode is significantly improved by shrinking MG films deposited on substrates with pre-strain. We demonstrate two types of MG-electrodes. One is a transparent MG-electrode for uniaxial stretching, and the other with better conductivity is for biaxial stretching. Compared with previous electrodes, the MG-electrodes exhibit a combination of high conductivity and negligible resistivity change (<5%), making them promising candidates for interconnections. Along with the excellent corrosion resistance of metallic glasses, the electrodes may be used in harsh environments.

The pH- and salt-controlled self-assembly of [1]benzothieno[3,2-b][1]-benzothiophene–peptide conjugates in supramolecular hydrogels

Salt- and pH-triggered supramolecular hydrogels were obtained from a novel [1]benzothieno[3,2-b][1]benzothiophene (BTBT)-peptide hybrid.

The Evolution of Flexible Electronics: From Nature, Beyond Nature, and To Nature

The flourishing development of multifunctional flexible electronics cannot leave the beneficial role of nature, which provides continuous inspiration in their material, structural, and functional designs. During the evolution of flexible electronics, some originated from nature, some were even beyond nature, and others were implantable or biodegradable eventually to nature. Therefore, the relationship between flexible electronics and nature is undoubtedly vital since harmony between nature and technology evolution would promote the sustainable development. Herein, materials selection and functionality design for flexible electronics that are mostly inspired from nature are first introduced with certain functionality even beyond nature. Then, frontier advances on flexible electronics including the main individual components (i.e., energy (the power source) and the sensor (the electric load)) are presented from nature, beyond nature, and to nature with the aim of enlightening the harmonious relationship between the modern electronics technology and nature. Finally, critical issues in next-generation flexible electronics are discussed to provide possible solutions and new insights in prospective exploration directions.

Host-Free Deep-Blue Organic Light-Emitting Transistors Based on a Novel Fluorescent Emitter

Organic light-emitting transistors (OLETs), with the capability of simultaneously functioning as a light-emitting stack and a thin-film transistor, have received considerable attention for potential applications in active-matrix flat-panel displays. Here, we demonstrate host-free deep-blue OLETs based on a novel small-molecule fluorescent emitter, 10,10'-bis(4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)-10H,10'H-9,9'-spirobi[acridine] (SPA-PBI), and a high-k dielectric, cross-linked poly(vinyl alcohol) (PVA) polymer. The deep-blue OLETs based on 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) as an electron-transport layer showed an extraordinarily high hole mobility of 4.6 cm² V^-1 s^-1, a brightness of 570 cd m^-2 under a low gate and source-drain voltages of -24 V, and an external quantum efficiency (EQE) of 0.87% at 100 cd m^-2. Besides, an electroluminescence peak was observed to be at 432 nm and the corresponding CIE coordinates were as deep as (0.16, 0.08). By replacing TPBi with TmPyPB as the electron-transport layer (ETL), the electron transport and hole blocking capability were greatly improved, which led to ∼60% enhancement of the EQE (1.39% at 100 cd m^-2). These results suggest that using a highly twisted double-donor-acceptor emitter with rationally optimized charge injection could lead to highly efficient deep-blue OLETs.

Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid

Organic field-effect transistors (OFETs) are of the core units in organic electronic circuits, and the performance of OFETs replies critically on the properties of their dielectric layers. Owing to the intrinsic flexibility and natural compatibility with other organic components, organic polymers, such as poly(vinyl alcohol) (PVA), have emerged as highly interesting dielectric materials for OFETs. However, unsatisfactory issues, such as hysteresis, high subthreshold swing, and low effective carrier mobility, still considerably limit the practical applications of the polymer-dielectric OFETs for high-speed, low-voltage flexible organic circuits. This work develops a new approach of using supercritical CO₂ fluid (SCCO₂) treatment on PVA dielectrics to achieve remarkably high-performance polymer-dielectric OFETs. The SCCO₂ treatment is able to completely eliminate the hysteresis in the transfer characteristics of OFETs, and it can also significantly reduce the device subthreshold slope to 0.25 V/dec and enhance the saturation regime carrier mobility to 30.2 cm² V⁻¹ s⁻¹, of which both the numbers are remarkable for flexible polymer-dielectric OFETs. It is further demonstrated that, coupling with an organic light-emitting diode (OLED), the SCCO₂-treated OFET is able to function very well under fast switching speed, which indicates that an excellent switching behavior of polymer-dielectric OFETs can be enabled by this SCCO₂ approach. Considering the broad and essential applications of OFETs, we envision that this SCCO₂ technology will have a very broad spectrum of applications for organic electronics, especially for high refresh rate and low-voltage flexible display devices.

Fast deposition of an ultrathin, highly crystalline organic semiconductor film for high-performance transistors

Ultrathin organic semiconductor (OSC) crystalline films hold the promise of achieving high-performance, flexible, and transparent organic electronic devices. However, fast and high-throughput solution deposition of uniform pinhole-free ultrathin OSC crystalline films over a large area remains a challenge. Here, we demonstrate that a mixed solvent system can obviously alter the fluid flow dynamics and significantly improve the blade-coating quality of the film, enabling us to achieve a large-area continuous and smooth bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) ultrathin film at a fast coating speed of ∼1 mm s^-1, much superior to the 30-50 μm s^-1 for conventional methods. Also, the ultrathin, highly crystalline Dif-TES-ADT film-based organic thin-film transistors (OTFTs) exhibit a maximum mobility up to 5.54 cm² V^-1 s^-1, which is on par with the Dif-TES-ADT single crystal-based devices and among the highest for Dif-TES-ADT film-based devices. This finding should open a new route to achieve ultrathin OSC crystalline film-based high-performance flexible and transparent electronics.

Advanced Soft Materials, Sensor Integrations, and Applications of Wearable Flexible Hybrid Electronics in Healthcare, Energy, and Environment

Recent advances in soft materials and system integration technologies have provided a unique opportunity to design various types of wearable flexible hybrid electronics (WFHE) for advanced human healthcare and human-machine interfaces. The hybrid integration of soft and biocompatible materials with miniaturized wireless wearable systems is undoubtedly an attractive prospect in the sense that the successful device performance requires high degrees of mechanical flexibility, sensing capability, and user-friendly simplicity. Here, the most up-to-date materials, sensors, and system-packaging technologies to develop advanced WFHE are provided. Details of mechanical, electrical, physicochemical, and biocompatible properties are discussed with integrated sensor applications in healthcare, energy, and environment. In addition, limitations of the current materials are discussed, as well as key challenges and the future direction of WFHE. Collectively, an all-inclusive review of the newly developed WFHE along with a summary of imperative requirements of material properties, sensor capabilities, electronics performance, and skin integrations is provided.

Enhancement of Interfacial Adhesion Using Micro/Nanoscale Hierarchical Cilia for Randomly Accessible Membrane-Type Electronic Devices

The recent technology of transfer printing using various membrane-type flexible/stretchable electronic devices can provide electronic functions to desirable objects where direct device fabrication is difficult. However, if the target surfaces are rough and complex, the capability of accommodating surface mismatches for reliable interfacial adhesion remains a challenge. Here, we demonstrate that newly designed nanotubular cilia (NTCs), vertically aligned underneath a polyimide substrate, significantly enhance interfacial adhesion. The tubular structure easily undergoes flattening and wrapping motions to provide a large conformal contact area, and the synergetic effect of the assembled cilia strengthens the overall adhesion. Furthermore, the hierarchical structure consisting of radially spread film-type cilia combined with vertically aligned NTCs in specific regions enables successful transfer printing onto very challenging surfaces such as stone, bark, and textiles. Finally, we successfully transferred a temperature sensor onto an eggshell and indium gallium zinc oxide-based transistors onto a stone with no electrical failure.

An Ultraflexible and Stretchable Aptameric Graphene Nanosensor for Biomarker Detection and Monitoring

An ultraflexible and stretchable field-effect transistor nanosensor is presented that uses aptamer-functionalized monolayer graphene as the conducting channel. Specific binding of the aptamer with the target biomarker induces a change in the carrier concentration of the graphene, which is measured to determine the biomarker concentration. Based on a Mylar substrate that is only 2.5-μm thick, the nanosensor is capable of conforming to underlying surfaces (e.g., those of human tissue or skin) that undergo large bending, twisting, and stretching deformations. In experimental testing, the device is rolled on cylindrical surfaces with radii down to 40 μm, twisted by angles ranging from -180° to 180°, or stretched by extensions up to 125%. With these large deformations applied either cyclically or non-recurrently, the device is shown to incur no visible mechanical damage, maintain consistent electrical properties, and allow detection of TNF-α, an inflammatory cytokine biomarker, with consistently high selectivity and low limit of detection (down to 5 × 10^-12M). The nanosensor can thus potentially enable consistent and reliable detection of liquid-borne biomarkers on human skin or tissue surfaces that undergo large mechanical deformations.

Low-Voltage, High-Performance Flexible Organic Field-Effect Transistors Based on Ultrathin Single-Crystal Microribbons

Organic field-effect transistors (OFETs) have acquired increasing attention because of their wide range of potential applications in electronics; nevertheless, high operating voltage and low carrier mobility are considered as major bottlenecks in their commercialization. In this work, we demonstrate low-voltage, flexible OFETs based on ultrathin single-crystal microribbons. Flexible OFETs fabricated with 2,7-dioctylbenzothieno[3,2-b]benzothiophene (C8-BTBT) based solution-processed ultrathin single-crystal microribbon as the semiconductor layer and high-k polymer, polysiloxane-poly(vinyl alcohol) composite as an insulator layer manifest a significantly low operating voltage of -4 V, and several devices showed a high mobility of >30 cm² V^-1 s^-1. Besides, the carrier mobility of the fabricated devices exhibits a slight degradation in static bending condition, which can be retained by 83.3% compared with its original value under a bending radius of 9 mm. As compared to the bulk C8-BTBT single-crystal-based OFET, which showed a large crack only after 50 dynamic bending cycles, our ultrathin single-crystal-based counterpart demonstrates a much better dynamic force stability. Moreover, under a 20 mm bending radius, the mobility of the device decreased by only 11.7% even after 500 bending cycles and no further decrease was observed until 1000 bending cycles. Our findings reveal that ultrathin C8-BTBT single-crystal-based flexible OFETs are promising candidates for various high-performance flexible electronic devices.