1
|
Wang Z, Li M, Yang H, Shao S, Li J, Deng M, Kang K, Fang Y, Wang H, Zhao J. Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems. ACS NANO 2024; 18:14298-14311. [PMID: 38787538 DOI: 10.1021/acsnano.4c00166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
The development of large-scale integration of optoelectronic neuromorphic devices with ultralow power consumption and broadband responses is essential for high-performance bionics vision systems. In this work, we developed a strategy to construct large-scale (40 × 30) enhancement-mode carbon nanotube optoelectronic synaptic transistors with ultralow power consumption (33.9 aJ per pulse) and broadband responses (from 365 to 620 nm) using low-work function yttrium (Y)-gate electrodes and the mixture of eco-friendly photosensitive Ag2S quantum dots (QDs) and ionic liquids (ILs)-cross-linking-poly(4-vinylphenol) (PVP) (ILs-c-PVP) as the dielectric layers. Solution-processable carbon nanotube thin-film transistors (TFTs) showed enhancement-mode characteristics with the wide and controllable threshold voltage window (-1 V∼0 V) owing to use of the low-work-function Y-gate electrodes. It is noted that carbon nanotube optoelectronic synaptic transistors exhibited high on/off ratios (>106), small hysteresis and low operating voltage (≤2 V), and enhancement mode even under the illumination of ultraviolet (UV, 365 nm), blue (450 nm), and green (550 nm) to red (620 nm) pulse lights when introducing eco-friendly Ag2S QDs in dielectric layers, demonstrating that they have the strong fault-tolerant ability for the threshold voltage drifts caused by various manufacturing scenarios. Furthermore, some important bionic functions including a high paired pulse facilitation index (PPF index, up to 290%), learning and memory function with the long duration (200 s), and rapid recovery (2 s). Pavlov's dog experiment (retention time up to 20 min) and visual memory forgetting experiments (the duration of high current for 180 s) are also demonstrated. Significantly, the optoelectronic synaptic transistors can be used to simulate the adaptive process of vision in varying light conditions, and we demonstrated the dynamic transition of light adaptation to dark adaptation based on light-induced conditional behavior. This work undoubtedly provides valuable insights for the future development of artificial vision systems.
Collapse
Affiliation(s)
- Zebin Wang
- Institute of Nano Science and Technology, University of Science and Technology of China, No. 166 Ren Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Min Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Hongchao Yang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Shuangshuang Shao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Jiaqi Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Meng Deng
- Institute of Nano Science and Technology, University of Science and Technology of China, No. 166 Ren Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Kaixiang Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Yuxiao Fang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Hua Wang
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, NO.79, Yingze West Main Street, Taiyuan, Shanxi Province 030024, P.R. China
| | - Jianwen Zhao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| |
Collapse
|
2
|
Lee J, Lee J, Bang H, Yoon TW, Ko JH, Zhang G, Park JS, Jeon I, Lee S, Kang B. One-Shot Remote Integration of Macromolecular Synaptic Elements on a Chip for Ultrathin Flexible Neural Network System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402361. [PMID: 38762775 DOI: 10.1002/adma.202402361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 04/23/2024] [Indexed: 05/20/2024]
Abstract
The field of biomimetic electronics that mimic synaptic functions has expanded significantly to overcome the limitations of the von Neumann bottleneck. However, the scaling down of the technology has led to an increasingly intricate manufacturing process. To address the issue, this work presents a one-shot integrable electropolymerization (OSIEP) method with remote controllability for the deposition of synaptic elements on a chip by exploiting bipolar electrochemistry. Condensing synthesis, deposition, and patterning into a single fabrication step is achieved by combining alternating-current voltage superimposed on direct-current voltage-bipolar electropolymerization and a specially designed dual source/drain bipolar electrodes. As a result, uniform 6 × 5 arrays of poly(3,4-ethylenedioxythiophene) channels are successfully fabricated on flexible ultrathin parylene substrates in one-shot process. The channels exhibited highly uniform characteristics and are directly used as electrochemical synaptic transistor with synaptic plasticity over 100 s. The synaptic transistors have demonstrated promising performance in an artificial neural network (NN) simulation, achieving a high recognition accuracy of 95.20%. Additionally, the array of synaptic transistor is easily reconfigured to a multi-gate synaptic circuit to implement the principles of operant conditioning. These results provide a compelling fabrication strategy for realizing cost-effective and disposable NN systems with high integration density.
Collapse
Affiliation(s)
- Jiyun Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Jaehoon Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Hyeonsu Bang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Tae Woong Yoon
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Jong Hwan Ko
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Guobing Zhang
- Special Display and Imaging Innovation Center of Anhui Province, National Engineering Lab of Special Display Technology, Academy of Opto-Electronic Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Chemistry and Chemical Engineering, Hefei University of Technology, Key Laboratory of Advance Functional Materials and Devices of Anhui Province, Hefei, 230009, China
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Il Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Boseok Kang
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| |
Collapse
|
3
|
Merces L, Ferro LMM, Nawaz A, Sonar P. Advanced Neuromorphic Applications Enabled by Synaptic Ion-Gating Vertical Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2305611. [PMID: 38757653 DOI: 10.1002/advs.202305611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 12/07/2023] [Indexed: 05/18/2024]
Abstract
Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi-modal sensing and recording, and multifunctional integration are critical aspects limiting their applications. Recently, a new synaptic device architecture, the ion-gating vertical transistor (IGVT), has been successfully realized and timely applied to perform brain-like perception, such as artificial vision, touch, taste, and hearing. In this short time, IGVTs have already achieved faster data processing speeds and more promising memory capabilities than many conventional neuromorphic devices, even while operating at lower voltages and consuming less power. This work focuses on the cutting-edge progress of IGVT technology, from outstanding fabrication strategies to the design and realization of low-voltage multi-sensing IGVTs for artificial-synapse applications. The fundamental concepts of artificial synaptic IGVTs, such as signal processing, transduction, plasticity, and multi-stimulus perception are discussed comprehensively. The contribution draws special attention to the development and optimization of multi-modal flexible sensor technologies and presents a roadmap for future high-end theoretical and experimental advancements in neuromorphic research that are mostly achievable by the synaptic IGVTs.
Collapse
Affiliation(s)
- Leandro Merces
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Letícia Mariê Minatogau Ferro
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| |
Collapse
|
4
|
Baek GW, Kim YJ, Kim J, Chang JH, Kim U, An S, Park J, Yu S, Bae WK, Lim J, Lee SY, Kwak J. Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing. NANO LETTERS 2024; 24:5855-5861. [PMID: 38690800 DOI: 10.1021/acs.nanolett.4c01083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Quantum dots (QDs) have garnered a significant amount of attention as promising memristive materials owing to their size-dependent tunable bandgap, structural stability, and high level of applicability for neuromorphic computing. Despite these advantageous properties, the development of QD-based memristors has been hindered by challenges in understanding and adjusting the resistive switching (RS) behavior of QDs. Herein, we propose three types of InP/ZnSe/ZnS QD-based memristors to elucidate the RS mechanism, employing a thin poly(methyl methacrylate) layer. This approach not only allows us to identify which carriers (electron or hole) are trapped within the QD layer but also successfully demonstrates QD-based synaptic devices. Furthermore, to utilize the QD memristor as a synapse, long-term potentiation/depression (LTP/LTD) characteristics are measured, resulting in a low nonlinearity of LTP/LTD at 0.1/1. On the basis of the LTP/LTD characteristics, single-layer perceptron simulations were performed using the Extended Modified National Institute of Standards and Technology, verifying a maximum recognition rate of 91.46%.
Collapse
Affiliation(s)
- Geun Woo Baek
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Yeon Jun Kim
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jaekwon Kim
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Uhjin Kim
- Department of Energy Science, Centre for Artificial Atoms, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Soobin An
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Junhyeong Park
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Sunkyu Yu
- Intelligent Wave Systems Laboratory, Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Jaehoon Lim
- Department of Energy Science, Centre for Artificial Atoms, and SKKU Institute of Energy Science and Technology (SIEST), and Department of Future Energy Engineering (DFEE), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Soo-Yeon Lee
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| |
Collapse
|
5
|
Bag A, Ghosh G, Sultan MJ, Chouhdry HH, Hong SJ, Trung TQ, Kang GY, Lee NE. Bio-Inspired Sensory Receptors for Artificial-Intelligence Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403150. [PMID: 38699932 DOI: 10.1002/adma.202403150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/16/2024] [Indexed: 05/05/2024]
Abstract
In the era of artificial intelligence (AI), there is a growing interest in replicating human sensory perception. Selective and sensitive bio-inspired sensory receptors with synaptic plasticity have recently gained significant attention in developing energy-efficient AI perception. Various bio-inspired sensory receptors and their applications in AI perception are reviewed here. The critical challenges for the future development of bio-inspired sensory receptors are outlined, emphasizing the need for innovative solutions to overcome hurdles in sensor design, integration, and scalability. AI perception can revolutionize various fields, including human-machine interaction, autonomous systems, medical diagnostics, environmental monitoring, industrial optimization, and assistive technologies. As advancements in bio-inspired sensing continue to accelerate, the promise of creating more intelligent and adaptive AI systems becomes increasingly attainable, marking a significant step forward in the evolution of human-like sensory perception.
Collapse
Affiliation(s)
- Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Gargi Ghosh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hamna Haq Chouhdry
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seok Ju Hong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tran Quang Trung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Geun-Young Kang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Samsung Advanced Institute for Health Sciences & Technology (SAIHST), Institute of Quantum Biophysics (IQB) and Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| |
Collapse
|
6
|
Zhang W, Wu M, Zhang Y, Yan H, Lee Y, Zhao Z, Hao H, Shi X, Zhang Z, Kim K, Liu N. Paraffin-Enabled Superlattice Customization for a Photostimulated Gradient-Responsive Artificial Reflex Arc. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313267. [PMID: 38346418 DOI: 10.1002/adma.202313267] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Revised: 01/25/2024] [Indexed: 02/21/2024]
Abstract
The development of photostimulated-motion artificial reflex arcs - a neural circuit inspired by light-driven motion reflexes - holds significant promises for advancements in robotic perception, navigation, and motion control. However, the fabrication of such systems, especially those that accommodate multiple actions and exhibit gradient responses, remains challenging. Here, a gradient-responsive photostimulated-motion artificial reflex arc is developed by integrating a programmable and tunable photoreceptor based on folded MoS2 at different twist angles. The twisted folded bilayer MoS2 used as photoreceptors can be customized via the transfer technique using patternable paraffin, where the twist angle and fold-line could be controlled. The photoluminescence (PL) intensity is 3.7 times higher at a twist angle of 29° compared to that at 0°, showing a monotonically decreasing indirect bandgap. Through tunable interlayer carrier transport, photoreceptors fabricated using folded bilayer MoS2 at different twist angles demonstrate gradient response time, enabling the photostimulated-motion artificial reflex arc for multiaction responses. They are transformed to digital command flow and studied via machine learning to control the gestures of a robotic hand, showing a prototype of photostimulated gradient-responsive artificial reflex arcs for the first time. This work provides a unique idea for developing intelligent soft robots and next-generation human-computer interfaces.
Collapse
Affiliation(s)
- Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Mengwei Wu
- College of Engineering, Peking University, Beijing, 100871, China
| | - Yan Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Hongyi Yan
- Department of Physics, Beijing Normal University, Beijing, 100875, P. R. China
| | - Yangjin Lee
- Center for Nanomedicine, Institute for Basic Science, Seoul, 03722, South Korea
- Department of Physics, Yonsei University, Seoul, 03722, South Korea
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - He Hao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Xiaohu Shi
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Zhaoxian Zhang
- College of Design and Engineering, National University of Singapore, 9 Engineering Drive 1, #07-26, EA, Singapore, 117575, Singapore
| | - Kwanpyo Kim
- Center for Nanomedicine, Institute for Basic Science, Seoul, 03722, South Korea
- Department of Physics, Yonsei University, Seoul, 03722, South Korea
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| |
Collapse
|
7
|
Lai J, Shi K, Qiu B, Liang J, Liu H, Zhang W, Yu G. Spacer Engineering Enables Fine-Tuned Thin Film Microstructure and Efficient Charge Transport for Ultrasensitive 2D Perovskite-Based Heterojunction Phototransistors and Optoelectronic Synapses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310002. [PMID: 38109068 DOI: 10.1002/smll.202310002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2023] [Indexed: 12/19/2023]
Abstract
2D Ruddlesden-Popper phase layered perovskites (RPLPs) hold great promise for optoelectronic applications. In this study, a series of high-performance heterojunction phototransistors (HPTs) based on RPLPs with different organic spacer cations (namely butylammonium (BA+), cyclohexylammonium (CyHA+), phenethylammonium (PEA+), p-fluorophenylethylammonium (p-F-PEA+), and 2-thiophenethylammonium (2-ThEA+)) are fabricated successfully, in which high-mobility organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene is adopted to form type II heterojunction channels with RPLPs. The 2-ThEA+-RPLP-based HPTs show the highest photosensitivity of 3.18 × 107 and the best detectivity of 9.00 × 1018 Jones, while the p-F-PEA+-RPLP-based ones exhibit the highest photoresponsivity of 5.51 × 106 A W-1 and external quantum efficiency of 1.32 × 109%, all of which are among the highest reported values to date. These heterojunction systems also mimicked several optically controllable fundamental characteristics of biological synapses, including excitatory postsynaptic current, paired-pulse facilitation, and the transition from short-term memory to long-term memory states. The device based on 2-ThEA+-RPLP film shows an ultra-high PPF index of 234%. Moreover, spacer engineering brought fine-tuned thin film microstructures and efficient charge transport/transfer, which contributes to the superior photodetection performance and synaptic functions of these RPLP-based HPTs. In-depth structure-property correlations between the organic spacer cations/RPLPs and thin film microstructure/device performance are systematically investigated.
Collapse
Affiliation(s)
- Jing Lai
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Keli Shi
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Beibei Qiu
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Jufang Liang
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Haicui Liu
- Key Laboratory of Solid-State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| |
Collapse
|
8
|
Li Y, Cai W, Tao R, Shuai W, Rao J, Chang C, Lu X, Ning H. Flexible and Energy-Efficient Synaptic Transistor with Quasi-Linear Weight Update Protocol by Inkjet Printing of Orientated Polar-Electret/High- k Oxide Composite Dielectric. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19271-19282. [PMID: 38591357 DOI: 10.1021/acsami.4c02880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Inkjet printing artificial synapse is cost-effective but challenging in emulating synaptic dynamics with a sufficient number of effective weight states under ultralow voltage spiking operation. A synaptic transistor gated by inkjet-printed composite dielectric of polar-electret polyvinylpyrrolidone (PVP) and high-k zirconia oxide (ZrOx) is proposed and thus synthesized to solve this issue. Quasi-linear weight update with a large variation margin is obtained through the coupling effect and the facilitation of dipole orientation, which can be attributed to the orderly arranged molecule chains induced by the carefully designed microfluidic flows. Crucial features of biological synapses including long-term plasticity, spike-timing-dependence-plasticity (STDP), "Learning-Experience" behavior, and ultralow energy consumption (<10 fJ/pulse) are successfully implemented on the device. Simulation results exhibit an excellent image recognition accuracy (97.1%) after 15 training epochs, which is the highest for printed synaptic transistors. Moreover, the device sustained excellent endurance against bending tests with radius down to 8 mm. This work presents a very viable solution for constructing the futuristic flexible and low-cost neural systems.
Collapse
Affiliation(s)
- Yushan Li
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wei Cai
- Jihua Laboratory, Foshan, Guangzhou 528000, China
| | - Ruiqiang Tao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wentao Shuai
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jingjing Rao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Cheng Chang
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| |
Collapse
|
9
|
Lee DK, Lee S, Sim H, Park Y, Choi SY, Son J. Piezo strain-controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons. SCIENCE ADVANCES 2024; 10:eadk8836. [PMID: 38578998 PMCID: PMC10997191 DOI: 10.1126/sciadv.adk8836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Accepted: 02/29/2024] [Indexed: 04/07/2024]
Abstract
Electrical manipulation of the metal-insulator transition (MIT) in quantum materials has attracted considerable attention toward the development of ultracompact neuromorphic devices because of their stimuli-triggered transformations. VO2 is expected to undergo abrupt electronic phase transition by piezo strain near room temperature; however, the unrestricted integration of defect-free VO2 films on piezoelectric substrates is required to fully exploit this emerging phenomenon in oxide heterostructures. Here, we demonstrate the integration of single-crystalline VO2 films on highly lattice-mismatched PMN-PT piezoelectric substrates using a single-crystal TiO2-nanomembrane (NM) template. Using our strategy on heterogeneous integration, single-crystal-like steep transition was observed in the defect-free VO2 films on TiO2-NM-PMN-PT. Unprecedented TMI modulation (5.2 kelvin) and isothermal resistance of VO2 [ΔR/R (Eg) ≈ 18,000% at 315 kelvin] were achieved by the efficient strain transfer-induced MIT, which cannot be achieved using directly grown VO2/PMN-PT substrates. Our results provide a fundamental strategy to realize a single-crystalline artificial heterojunction for promoting the application of artificial neurons using emergent materials.
Collapse
Affiliation(s)
- Dong Kyu Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Sungwon Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyeji Sim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Yunkyu Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Junwoo Son
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| |
Collapse
|
10
|
Biswas S, Jang H, Lee Y, Choi H, Kim Y, Kim H, Zhu Y. Recent advancements in implantable neural links based on organic synaptic transistors. EXPLORATION (BEIJING, CHINA) 2024; 4:20220150. [PMID: 38855618 PMCID: PMC11022612 DOI: 10.1002/exp.20220150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Accepted: 09/15/2023] [Indexed: 06/11/2024]
Abstract
The progress of brain synaptic devices has witnessed an era of rapid and explosive growth. Because of their integrated storage, excellent plasticity and parallel computing, and system information processing abilities, various field effect transistors have been used to replicate the synapses of a human brain. Organic semiconductors are characterized by simplicity of processing, mechanical flexibility, low cost, biocompatibility, and flexibility, making them the most promising materials for implanted brain synaptic bioelectronics. Despite being used in numerous intelligent integrated circuits and implantable neural linkages with multiple terminals, organic synaptic transistors still face many obstacles that must be overcome to advance their development. A comprehensive review would be an excellent tool in this respect. Therefore, the latest advancements in implantable neural links based on organic synaptic transistors are outlined. First, the distinction between conventional and synaptic transistors are highlighted. Next, the existing implanted organic synaptic transistors and their applicability to the brain as a neural link are summarized. Finally, the potential research directions are discussed.
Collapse
Affiliation(s)
- Swarup Biswas
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Hyo‐won Jang
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Yongju Lee
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| | - Hyojeong Choi
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| | - Yoon Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Hyeok Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
- Central Business, SENSOMEDICheongju‐siRepublic of Korea
- Institute of Sensor System, SENSOMEDICheongjuRepublic of Korea
- Energy FlexSeoulRepublic of Korea
| | - Yangzhi Zhu
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| |
Collapse
|
11
|
Meng J, Song J, Fang Y, Wang T, Zhu H, Ji L, Sun QQ, Zhang DW, Chen L. Ionic Diffusive Nanomemristors with Dendritic Competition and Cooperation Functions for Ultralow Voltage Neuromorphic Computing. ACS NANO 2024; 18:9150-9159. [PMID: 38477708 DOI: 10.1021/acsnano.4c00424] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Realization of dendric signal processing in the human brain is of great significance for spatiotemporal neuromorphic engineering. Here, we proposed an ionic dendrite device with multichannel communication, which could realize synaptic behaviors even under an ultralow action potential of 80 mV. The device not only could simulate one-to-one information transfer of axons but also achieve a many-to-one modulation mode of dendrites. By the adjustment of two presynapses, Pavlov's dog conditioning experiment was learned successfully. Furthermore, the device also could emulate the biological synaptic competition and synaptic cooperation phenomenon through the comodulation of three presynapses, which are crucial for artificial neural network (ANN) implementation. Finally, an ANN was further constructed to realize highly efficient and anti-interference recognition of fashion patterns. By introducing the cooperative device, synaptic weight updates could be improved for higher linearity and larger dynamic regulation range in neuromorphic computing, resulting in higher recognition accuracy and efficiency. Such an artificial dendric device has great application prospects in the processing of more complex information and the construction of an ANN system with more functions.
Collapse
Affiliation(s)
- Jialin Meng
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| | - Jieru Song
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
| | - Yuqing Fang
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
| | - Tianyu Wang
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| | - Hao Zhu
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| | - Li Ji
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| | - Qing-Qing Sun
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| | - David Wei Zhang
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| | - Lin Chen
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| |
Collapse
|
12
|
Park J, Kim JO, Kang SW. Lateral heterostructures of WS 2 and MoS 2 monolayers for photo-synaptic transistor. Sci Rep 2024; 14:6922. [PMID: 38519613 PMCID: PMC10959970 DOI: 10.1038/s41598-024-57642-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 03/20/2024] [Indexed: 03/25/2024] Open
Abstract
Von Neumann architecture-based computing, while widely successful in personal computers and embedded systems, faces inherent challenges including the von Neumann bottleneck, particularly amidst the ongoing surge of data-intensive tasks. Neuromorphic computing, designed to integrate arithmetic, logic, and memory operations, has emerged as a promising solution for improving energy efficiency and performance. This approach requires the construction of an artificial synaptic device that can simultaneously perform signal processing, learning, and memory operations. We present a photo-synaptic device with 32 analog multi-states by exploiting field-effect transistors based on the lateral heterostructures of two-dimensional (2D) WS2 and MoS2 monolayers, formed through a two-step metal-organic chemical vapor deposition process. These lateral heterostructures offer high photoresponsivity and enhanced efficiency of charge trapping at the interface between the heterostructures and SiO2 due to the presence of the WS2 monolayer with large trap densities. As a result, it enables the photo-synaptic transistor to implement synaptic behaviors of long-term plasticity and high recognition accuracy. To confirm the feasibility of the photo-synapse, we investigated its synaptic characteristics under optical and electrical stimuli, including the retention of excitatory post-synaptic currents, potentiation, habituation, nonlinearity factor, and paired-pulse facilitation. Our findings suggest the potential of versatile 2D material-synapse with a high density of device integration.
Collapse
Affiliation(s)
- Jaeseo Park
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Jun Oh Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Sang-Woo Kang
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea.
- Precision Measurement, University of Science and Technology, Daejeon, 34113, Republic of Korea.
| |
Collapse
|
13
|
Liu D, Zhang J, Shi Q, Sun T, Xu Y, Li L, Tian L, Xiong L, Zhang J, Huang J. Humidity/Oxygen-Insensitive Organic Synaptic Transistors Based on Optical Radical Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305370. [PMID: 37506027 DOI: 10.1002/adma.202305370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 07/15/2023] [Indexed: 07/30/2023]
Abstract
For most organic synaptic transistors based on the charge trapping effect, different atmosphere conditions lead to significantly different device performance. Some devices even lose the synaptic responses under vacuum or inert atmosphere. The stable device performance of these organic synaptic transistors under varied working environments with different humidity and oxygen levels can be a challenge. Herein, a moisture- and oxygen-insensitive organic synaptic device based on the organic semiconductor and photoinitiator molecules is reported. Unlike the widely reported charge trapping effect, the photoinduced free radical is utilized to realize the photosynaptic performance. The resulting synaptic transistor displays typical excitatory postsynaptic current, paired-pulse facilitation, learning, and forgetting behaviors. Furthermore, the device exhibits decent and stable photosynaptic performances under high humidity and vacuum conditions. This type of organic synaptic device also demonstrates high potential in ultraviolet B perception based on its environmental stability and broad ultraviolet detection capability. Finally, the contrast-enhanced capability of the device is successfully validated by the single-layer-perceptron/double-layer network based Modified National Institute of Standards and Technology pattern recognition. This work could have important implications for the development of next-generation environment-stable organic synaptic devices and systems.
Collapse
Affiliation(s)
- Dapeng Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Qianqian Shi
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Tian
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Lize Xiong
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| |
Collapse
|
14
|
Jeong SH, Oh S, Kwon O, Kim DH, Seo HY, Park W, Cho B. Reliable synaptic plasticity of InGaZnO transistor with TiO 2interlayer. NANOTECHNOLOGY 2023; 35:115202. [PMID: 38091622 DOI: 10.1088/1361-6528/ad1540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 12/13/2023] [Indexed: 12/30/2023]
Abstract
We demonstrate an InGaZnO (IGZO)-based synaptic transistor with a TiO2buffer layer. The structure of the synaptic transistor with TiO2inserted between the Ti metal electrode and an IGZO semiconductor channel O2trapping layer produces a large hysteresis window, which is crucial for achieving synaptic functionality. The Ti/TiO2/IGZO synaptic transistor exhibits reliable synaptic plasticity features such as excitatory post-synaptic current, paired-pulse facilitation, and potentiation and depression, originating from the reversible charge trapping and detrapping in the TiO2layer. Finally, the pattern recognition accuracy of Modified National Institute of Standards and Technology handwritten digit images was modeled using CrossSim simulation software. The simulation results present a high image recognition accuracy of ∼89%. Therefore, this simple approach using an oxide buffer layer can aid the implementation of high-performance synaptic devices for neuromorphic computing systems.
Collapse
Affiliation(s)
- Soo-Hong Jeong
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Seyoung Oh
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Ojun Kwon
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Do Hyeong Kim
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Hyun Young Seo
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Woojin Park
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| |
Collapse
|
15
|
Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
Collapse
Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
| |
Collapse
|
16
|
Mariani F, Decataldo F, Bonafè F, Tessarolo M, Cramer T, Gualandi I, Fraboni B, Scavetta E. High-Endurance Long-Term Potentiation in Neuromorphic Organic Electrochemical Transistors by PEDOT:PSS Electrochemical Polymerization on the Gate Electrode. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37966461 DOI: 10.1021/acsami.3c10576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
The brain exhibits extraordinary information processing capabilities thanks to neural networks that can operate in parallel with minimal energy consumption. Memory and learning require the creation of new neural networks through the long-term modification of the structure of the synapses, a phenomenon called long-term plasticity. Here, we use an organic electrochemical transistor to simulate long-term potentiation and depotentiation processes. Similarly to what happens in a synapse, the polymerization of the 3,4-ethylenedioxythiophene (EDOT) on the gate electrode modifies the structure of the device and boosts the ability of the gate potential to modify the conductivity of the channel. Operando AFM measurements were carried out to demonstrate the correlation between neuromorphic behavior and modification of the gate electrode. Long-term enhancement depends on both the number of pulses used and the gate potential, which generates long-term potentiation when a threshold of +0.7 V is overcome. Long-term depotentiation occurs by applying a +3.0 V potential and exploits the overoxidation of the deposited PEDOT:PSS. The induced states are stable for at least 2 months. The developed device shows very interesting characteristics in the field of neuromorphic electronics.
Collapse
Affiliation(s)
- Federica Mariani
- Department of Industrial Chemistry "Toso Montanari", Alma Mater Studiorum - University of Bologna, Viale del Risorgimento 4, 40136 Bologna, Italy
| | - Francesco Decataldo
- Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Filippo Bonafè
- Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Marta Tessarolo
- Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Tobias Cramer
- Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Isacco Gualandi
- Department of Industrial Chemistry "Toso Montanari", Alma Mater Studiorum - University of Bologna, Viale del Risorgimento 4, 40136 Bologna, Italy
| | - Beatrice Fraboni
- Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Erika Scavetta
- Department of Industrial Chemistry "Toso Montanari", Alma Mater Studiorum - University of Bologna, Viale del Risorgimento 4, 40136 Bologna, Italy
| |
Collapse
|
17
|
Liu L, Dananjaya PA, Ang CCI, Koh EK, Lim GJ, Poh HY, Chee MY, Lee CXX, Lew WS. A bi-functional three-terminal memristor applicable as an artificial synapse and neuron. NANOSCALE 2023; 15:17076-17084. [PMID: 37847400 DOI: 10.1039/d3nr02780e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2023]
Abstract
Due to their significant resemblance to the biological brain, spiking neural networks (SNNs) show promise in handling spatiotemporal information with high time and energy efficiency. Two-terminal memristors have the capability to achieve both synaptic and neuronal functions; however, such memristors face asynchronous programming/reading operation issues. Here, a three-terminal memristor (3TM) based on oxygen ion migration is developed to function as both a synapse and a neuron. We demonstrate short-term plasticity such as pair-pulse facilitation and high-pass dynamic filtering in our devices. Additionally, a 'learning-forgetting-relearning' behavior is successfully mimicked, with lower power required for the relearning process than the first learning. Furthermore, by leveraging the short-term dynamics, the leaky-integrate-and-fire neuronal model is emulated by the 3TM without adopting an external capacitor to obtain the leakage property. The proposed bi-functional 3TM offers more process compatibility for integrating synaptic and neuronal components in the hardware implementation of an SNN.
Collapse
Affiliation(s)
- Lingli Liu
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Putu Andhita Dananjaya
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Calvin Ching Ian Ang
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Eng Kang Koh
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Gerard Joseph Lim
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Han Yin Poh
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Mun Yin Chee
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Calvin Xiu Xian Lee
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
| |
Collapse
|
18
|
Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
Collapse
Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| |
Collapse
|
19
|
Ran Y, Lu W, Wang X, Qin Z, Qin X, Lu G, Hu Z, Zhu Y, Bu L, Lu G. High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks. MATERIALS HORIZONS 2023; 10:4438-4451. [PMID: 37489257 DOI: 10.1039/d3mh00775h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/26/2023]
Abstract
Photonics neuromorphic computing shows great prospects due to the advantages of low latency, low power consumption and high bandwidth. Transistors with asymmetric electrode structures are receiving increasing attention due to their low power consumption, high optical response, and simple preparation technology. However, intelligent optical synapses constructed by asymmetric electrodes are still lacking systematic research and mechanism analysis. Herein, we present an asymmetric electrode structure of the light-stimulated synaptic transistor (As-LSST) with a bulk heterojunction as the semiconductor layer. The As-LSST exhibits superior electrical properties, photosensitivity and multiple biological synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, and long-term memory. Benefitting from the asymmetric electrode configuration, the devices can operate under a very low drain voltage of 1 × 10-7 V, and achieve an ultra-low energy consumption of 2.14 × 10-18 J per light stimulus event. Subsequently, As-LSST implemented the optical logic function and associative learning. Utilizing As-LSST, an artificial neural network (ANN) with ultra-high recognition rate (over 97.5%) of handwritten numbers was constructed. This work presents an easily-accessible concept for future neuromorphic computing and intelligent electronic devices.
Collapse
Affiliation(s)
- Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Xinsu Qin
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710049, China
| | - Guanyu Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Zhen Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| |
Collapse
|
20
|
Nikam RD, Lee J, Lee K, Hwang H. Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302593. [PMID: 37300356 DOI: 10.1002/smll.202302593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 05/23/2023] [Indexed: 06/12/2023]
Abstract
Advanced materials and device engineering has played a crucial role in improving the performance of electrochemical random access memory (ECRAM) devices. ECRAM technology has been identified as a promising candidate for implementing artificial synapses in neuromorphic computing systems due to its ability to store analog values and its ease of programmability. ECRAM devices consist of an electrolyte and a channel material sandwiched between two electrodes, and the performance of these devices depends on the properties of the materials used. This review provides a comprehensive overview of material engineering strategies to optimize the electrolyte and channel materials' ionic conductivity, stability, and ionic diffusivity to improve the performance and reliability of ECRAM devices. Device engineering and scaling strategies are further discussed to enhance ECRAM performance. Last, perspectives on the current challenges and future directions in developing ECRAM-based artificial synapses in neuromorphic computing systems are provided.
Collapse
Affiliation(s)
- Revannath Dnyandeo Nikam
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Jongwon Lee
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Kyumin Lee
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Hyunsang Hwang
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| |
Collapse
|
21
|
Kim T, Choi CH, Hur JS, Ha D, Kuh BJ, Kim Y, Cho MH, Kim S, Jeong JK. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204663. [PMID: 35862931 DOI: 10.1002/adma.202204663] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Revised: 07/04/2022] [Indexed: 06/15/2023]
Abstract
As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Among them, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low-temperature processibility with conventional complementary-metal-oxide-semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next-generation electronics such as back-end-of-line transistor applications in monolithic 3D integration beyond the display applications, however, there is still much room for further study, such as high mobility, immune short-channel effects, low electrical contact properties, etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next-generation electronics are discussed.
Collapse
Affiliation(s)
- Taikyu Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Daewon Ha
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Bong Jin Kuh
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Yongsung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Min Hee Cho
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Sangwook Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| |
Collapse
|
22
|
Wang X, Yang S, Qin Z, Hu B, Bu L, Lu G. Enhanced Multiwavelength Response of Flexible Synaptic Transistors for Human Sunburned Skin Simulation and Neuromorphic Computation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303699. [PMID: 37358823 DOI: 10.1002/adma.202303699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 06/22/2023] [Indexed: 06/27/2023]
Abstract
In biological species, optogenetics and bioimaging work together to regulate the function of neurons. Similarly, the light-controlled artificial synaptic system not only enhances computational speed but also simulates complex synaptic functions. However, reported synaptic properties are mainly limited to mimicking simple biological functions and single-wavelength responses. Therefore, the development of flexible synaptic devices with multiwavelength optical signal response and multifunctional simulation remains a challenge. Here, flexible organic light-stimulated synaptic transistors (LSSTs) enabled by alumina oxide (AlOX ), with a simple fabrication process, are reported. By embedding AlOX nanoparticles, the excitons separation efficiency is improved, allowing for multiple wavelength responses. Optimized LSSTs can respond to multiple optical and electrical signals in a highly synaptic manner. Multiwavelength optical synaptic plasticity, electrical synaptic plasticity, sunburned skin simulation, learning efficiency model controlled by photoelectric cooperative stimulation, neural network computing, "deer" picture learning and memory functions are successfully proposed, which promote the development for future artificial intelligent systems. Furthermore, as prepared flexible transistors exhibit mechanical flexibility with bending radius down to 2.5 mm and improved photosynaptic plasticity, which facilitating development of neuromorphic computing and multifunction integration systems at the device-level.
Collapse
Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Shuting Yang
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Bin Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| |
Collapse
|
23
|
Wei H, Xu Z, Ni Y, Yang L, Sun L, Gong J, Zhang S, Qu S, Xu W. Mixed-Dimensional Nanoparticle-Nanowire Channels for Flexible Optoelectronic Artificial Synapse with Enhanced Photoelectric Response and Asymmetric Bidirectional Plasticity. NANO LETTERS 2023; 23:8743-8752. [PMID: 37698378 DOI: 10.1021/acs.nanolett.3c02836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
A mixed-dimensional dual-channel synaptic transistor composed of inorganic nanoparticles and organic nanowires was fabricated to expand the photoelectric gain range. The device can actualize the sensitization features of the nociceptor and shows improved responsiveness to visible light. Under electrical pulses with different polarities, the apparatus exhibits reconfigurable asymmetric bidirectional plasticity. Moreover, the devices demonstrate good operational tolerance and mechanical stability, retaining more than 60% of their maximum responsiveness after 100 consecutive/bidirectional and 1000 flex/flat operations. The improved photoelectric response of the device endows a high image recognition accuracy of greater than 80%. Asymmetric bidirectional plasticity is used as punishment/reward in a psychological experiment to emulate the improvement of learning motivation and enables real-time forward and backward deflection (+7 and -25°) of artificial muscle. The mixed-dimensional optoelectronic artificial synapses with switchable behavior and electron/hole transport type have important prospects for neuromorphic processing and artificial somatosensory nerves.
Collapse
Affiliation(s)
- Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
- Institutes of Physical Science and Information Technology, School of Materials Science and Engineering, Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Anhui University, Ministry of Education, Hefei 230601, People's Republic of China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| |
Collapse
|
24
|
Kim H, Oh S, Choo H, Kang DH, Park JH. Tactile Neuromorphic System: Convergence of Triboelectric Polymer Sensor and Ferroelectric Polymer Synapse. ACS NANO 2023; 17:17332-17341. [PMID: 37611149 DOI: 10.1021/acsnano.3c05337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Sensory neuromorphic systems are a promising technology, because they can replicate the way the human peripheral nervous system processes signals from the five sensory organs. Despite this potential, there are limited studies on how to implement these systems on a hardware neural network platform. In our research, we propose a tactile neuromorphic system that uses a poly(dimethylsiloxane) (PDMS)-based triboelectric sensor and a molybdenum disulfide (MoS2)/poly(vinylidene fluoride-trifluoro ethylene) (P(VDF-TrFE)) heterostructure-based ferroelectric synapse. The triboelectric sensor mimics a human tactile organ by converting tactile stimuli into electrical signals in real time. The ferroelectric synapse we developed demonstrates exceptional long-term potentiation/depression characteristics with a maximum dynamic range of 78 and a symmetrical value of 4.7. To assess the practicality of our proposed system, we conducted training and recognition simulations using Morse code alphabets and MNIST handwritten digits. The maximum recognition rate that we achieved was 96.17%.
Collapse
Affiliation(s)
- Hyeongjun Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea
| | - Seyong Oh
- Division of Electrical Engineering, Hanyang University ERICA, Ansan 15588, South Korea
| | - Hyongsuk Choo
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea
| | - Dong-Ho Kang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, South Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16417, Korea
| |
Collapse
|
25
|
Tabatabaian F, Vora SR, Mirabbasi S. Applications, functions, and accuracy of artificial intelligence in restorative dentistry: A literature review. J ESTHET RESTOR DENT 2023; 35:842-859. [PMID: 37522291 DOI: 10.1111/jerd.13079] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 06/18/2023] [Accepted: 06/19/2023] [Indexed: 08/01/2023]
Abstract
OBJECTIVE The applications of artificial intelligence (AI) are increasing in restorative dentistry; however, the AI performance is unclear for dental professionals. The purpose of this narrative review was to evaluate the applications, functions, and accuracy of AI in diverse aspects of restorative dentistry including caries detection, tooth preparation margin detection, tooth restoration design, metal structure casting, dental restoration/implant detection, removable partial denture design, and tooth shade determination. OVERVIEW An electronic search was performed on Medline/PubMed, Embase, Web of Science, Cochrane, Scopus, and Google Scholar databases. English-language articles, published from January 1, 2000, to March 1, 2022, relevant to the aforementioned aspects were selected using the key terms of artificial intelligence, machine learning, deep learning, artificial neural networks, convolutional neural networks, clustering, soft computing, automated planning, computational learning, computer vision, and automated reasoning as inclusion criteria. A manual search was also performed. Therefore, 157 articles were included, reviewed, and discussed. CONCLUSIONS Based on the current literature, the AI models have shown promising performance in the mentioned aspects when being compared with traditional approaches in terms of accuracy; however, as these models are still in development, more studies are required to validate their accuracy and apply them to routine clinical practice. CLINICAL SIGNIFICANCE AI with its specific functions has shown successful applications with acceptable accuracy in diverse aspects of restorative dentistry. The understanding of these functions may lead to novel applications with optimal accuracy for AI in restorative dentistry.
Collapse
Affiliation(s)
- Farhad Tabatabaian
- Department of Oral Health Sciences, Faculty of Dentistry, The University of British Columbia, Vancouver, British Columbia, Canada
| | - Siddharth R Vora
- Department of Oral Health Sciences, Faculty of Dentistry, The University of British Columbia, Vancouver, British Columbia, Canada
| | - Shahriar Mirabbasi
- Department of Electrical and Computer Engineering, Faculty of Applied Science, The University of British Columbia, Vancouver, British Columbia, Canada
| |
Collapse
|
26
|
Li L, Wang S, Duan X, Wang Z, Chang KC. Targeted Chemical Processing Initiating Biosome Action-Potential-Matched Artificial Synapses for the Brain-Machine Interface. ACS APPLIED MATERIALS & INTERFACES 2023; 15:40753-40761. [PMID: 37585625 DOI: 10.1021/acsami.3c07684] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
A great gap still exists between artificial synapses and their biological counterparts in operation voltage or stimulation duration. Here, an artificial synaptic device based on a thin-film transistor with an operating voltage (-50-50 mV) analogous to biological action potential is developed by targeted chemical processing with the help of supercritical fluids. Chemical molecules [hexamethyldisilazane (HMDS)] are elaborately chosen and brought into the target interface to form charge receptors through supercritical processing. These charge receptors with the ability of capturing electrons mimic neurotransmitter receptors in terms of mechanism and constitute key players accounting for the synaptic behaviors. The relatively lower electrical barrier height contributes to an action-potential-matched operating voltage and considerably low power consumption (∼1 pJ/synaptic event), minimizing the divide with biological synapse for a seamless linkage to the biosystem or brain-machine interface. The stable synaptic behaviors also lead to near-ideal accuracy in pattern recognition. Moreover, this methodology that introduces chemical groups into a target interface can be viewed as a platform technology that could be adapted to other conventional devices with suitable chemical molecules to reach designed synaptic behaviors. This environmentally friendly and low-temperature processing method, which can be performed even after device fabrication, has the potential to play an important role in the future development of bionic devices.
Collapse
Affiliation(s)
- Lei Li
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, Guangdong 518055, People's Republic of China
| | - Shidong Wang
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, Guangdong 518055, People's Republic of China
| | - Xinqing Duan
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, Guangdong 518055, People's Republic of China
| | - Zewen Wang
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, Guangdong 518055, People's Republic of China
| | - Kuan-Chang Chang
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, Guangdong 518055, People's Republic of China
| |
Collapse
|
27
|
Guo F, Io WF, Dang Z, Ding R, Pang SY, Zhao Y, Hao J. Achieving reinforcement learning in a three-active-terminal neuromorphic device based on a 2D vdW ferroelectric material. MATERIALS HORIZONS 2023; 10:3719-3728. [PMID: 37403831 DOI: 10.1039/d3mh00714f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2023]
Abstract
Currently, for most three-terminal neuromorphic devices, only the gate terminal is active. The inadequate modes and freedom of modulation in such devices greatly hinder the implementation of complex neural behaviors and brain-like thinking strategies in hardware systems. Taking advantage of the unique feature of co-existing in-plane (IP) and out-of-plane (OOP) ferroelectricity in two-dimensional (2D) ferroelectric α-In2Se3, we construct a three-active-terminal neuromorphic device where any terminal can modulate the conductance state. Based on the co-operation mode, controlling food intake as a complex nervous system-level behavior is achieved to carry out positive and negative feedback. Specifically, reinforcement learning as a brain-like thinking strategy is implemented due to the coupling between polarizations in different directions. Compared to the single modulation mode, the chance of the agent successfully obtaining the reward in the Markov decision process is increased from 68% to 82% under the co-operation mode through the coupling effect between IP and OOP ferroelectricity in 2D α-In2Se3 layers. Our work demonstrates the practicability of three-active-terminal neuromorphic devices in handling complex tasks and advances a significant step towards implementing brain-like learning strategies based on neuromorphic devices for dealing with real-world challenges.
Collapse
Affiliation(s)
- Feng Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Weng Fu Io
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
| | - Zhaoying Dang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
| | - Ran Ding
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
| | - Sin-Yi Pang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
| | - Yuqian Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Photonics Research Institute and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China
| |
Collapse
|
28
|
Choi Y, Ho DH, Kim S, Choi YJ, Roe DG, Kwak IC, Min J, Han H, Gao W, Cho JH. Physically defined long-term and short-term synapses for the development of reconfigurable analog-type operators capable of performing health care tasks. SCIENCE ADVANCES 2023; 9:eadg5946. [PMID: 37406117 PMCID: PMC10321737 DOI: 10.1126/sciadv.adg5946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 05/30/2023] [Indexed: 07/07/2023]
Abstract
Extracting valuable information from the overflowing data is a critical yet challenging task. Dealing with high volumes of biometric data, which are often unstructured, nonstatic, and ambiguous, requires extensive computer resources and data specialists. Emerging neuromorphic computing technologies that mimic the data processing properties of biological neural networks offer a promising solution for handling overflowing data. Here, the development of an electrolyte-gated organic transistor featuring a selective transition from short-term to long-term plasticity of the biological synapse is presented. The memory behaviors of the synaptic device were precisely modulated by restricting ion penetration through an organic channel via photochemical reactions of the cross-linking molecules. Furthermore, the applicability of the memory-controlled synaptic device was verified by constructing a reconfigurable synaptic logic gate for implementing a medical algorithm without further weight-update process. Last, the presented neuromorphic device demonstrated feasibility to handle biometric information with various update periods and perform health care tasks.
Collapse
Affiliation(s)
- Yongsuk Choi
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, CA 91125, USA
| | - Dong Hae Ho
- Mechanical Engineering, Soft Materials and Structures Lab, Virginia Tech, Blacksburg, VA 24061, USA
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Young Jin Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Dong Gue Roe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - In Cheol Kwak
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jihong Min
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, CA 91125, USA
| | - Hong Han
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, CA 91125, USA
| | - Wei Gao
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, CA 91125, USA
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| |
Collapse
|
29
|
Wang X, Yang H, Li E, Cao C, Zheng W, Chen H, Li W. Stretchable Transistor-Structured Artificial Synapses for Neuromorphic Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205395. [PMID: 36748849 DOI: 10.1002/smll.202205395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Revised: 01/12/2023] [Indexed: 05/04/2023]
Abstract
Stretchable synaptic transistors, a core technology in neuromorphic electronics, have functions and structures similar to biological synapses and can concurrently transmit signals and learn. Stretchable synaptic transistors are usually soft and stretchy and can accommodate various mechanical deformations, which presents significant prospects in soft machines, electronic skin, human-brain interfaces, and wearable electronics. Considerable efforts have been devoted to developing stretchable synaptic transistors to implement electronic device neuromorphic functions, and remarkable advances have been achieved. Here, this review introduces the basic concept of artificial synaptic transistors and summarizes the recent progress in device structures, functional-layer materials, and fabrication processes. Classical stretchable synaptic transistors, including electric double-layer synaptic transistors, electrochemical synaptic transistors, and optoelectronic synaptic transistors, as well as the applications of stretchable synaptic transistors in light-sensory systems, tactile-sensory systems, and multisensory artificial-nerves systems, are discussed. Finally, the current challenges and potential directions of stretchable synaptic transistors are analyzed. This review presents a detailed introduction to the recent progress in stretchable synaptic transistors from basic concept to applications, providing a reference for the development of stretchable synaptic transistors in the future.
Collapse
Affiliation(s)
- Xiumei Wang
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Huihuang Yang
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Enlong Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Chunbin Cao
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Wen Zheng
- School of Science, Anhui Agricultural University, Hefei, 230036, China
- School of Information & Computer, Anhui Agricultural University, Hefei, 230036, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
- National Key Laboratory of Integrated Circuit Chips and Systems, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| |
Collapse
|
30
|
Cho H, Lee D, Ko K, Lin DY, Lee H, Park S, Park B, Jang BC, Lim DH, Suh J. Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations. ACS NANO 2023; 17:7384-7393. [PMID: 37052666 DOI: 10.1021/acsnano.2c11538] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional materials and their heterostructures have thus far been identified as leading candidates for nanoelectronics owing to the near-atom thickness, superior electrostatic control, and adjustable device architecture. These characteristics are indeed advantageous for neuro-inspired computing hardware where precise programming is strongly required. However, its successful demonstration fully utilizing all of the given benefits remains to be further developed. Herein, we present van der Waals (vdW) integrated synaptic transistors with multistacked floating gates, which are reconfigured upon surface oxidation. When compared with a conventional device structure with a single floating gate, our double-floating-gate (DFG) device exhibits better nonvolatile memory performance, including a large memory window (>100 V), high on-off current ratio (∼107), relatively long retention time (>5000 s), and satisfactory cyclic endurance (>500 cycles), all of which can be attributed to its increased charge-storage capacity and spatial redistribution. This facilitates highly effective modulation of trapped charge density with a large dynamic range. Consequently, the DFG transistor exhibits an improved weight update profile in long-term potentiation/depression synaptic behavior for nearly ideal classification accuracies of up to 96.12% (MNIST) and 81.68% (Fashion-MNIST). Our work adds a powerful option to vdW-bonded device structures for highly efficient neuromorphic computing.
Collapse
Affiliation(s)
- Hoyeon Cho
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Donghyun Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Kyungmin Ko
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Der-Yuh Lin
- Department of Electronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan
| | - Huimin Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sangwoo Park
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Beomsung Park
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Byung Chul Jang
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Dong-Hyeok Lim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| |
Collapse
|
31
|
Soliman M, Maity K, Gloppe A, Mahmoudi A, Ouerghi A, Doudin B, Kundys B, Dayen JF. Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15732-15744. [PMID: 36919904 PMCID: PMC10375436 DOI: 10.1021/acsami.3c00092] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh opportunities in the search for alternative device architectures toward overcoming the von Neumann bottleneck. However, their implementation is still in its infancy, mostly by electrical control. It is of utmost interest to develop strategies for additional optical and multistate control in the quest for novel neuromorphic architectures. Here, we demonstrate the electrical and optical control of the ferroelectric polarization states of ferroelectric field effect transistors (FeFET). The FeFETs, fully made of ReS2/hBN/CuInP2S6 vdW materials, achieve an on/off ratio exceeding 107, a hysteresis memory window up to 7 V wide, and multiple remanent states with a lifetime exceeding 103 s. Moreover, the ferroelectric polarization of the CuInP2S6 (CIPS) layer can be controlled by photoexciting the vdW heterostructure. We perform wavelength-dependent studies, which allow for identifying two mechanisms at play in the optical control of the polarization: band-to-band photocarrier generation into the 2D semiconductor ReS2 and photovoltaic voltage into the 2D ferroelectric CIPS. Finally, heterosynaptic plasticity is demonstrated by operating our FeFET in three different synaptic modes: electrically stimulated, optically stimulated, and optically assisted synapse. Key synaptic functionalities are emulated including electrical long-term plasticity, optoelectrical plasticity, optical potentiation, and spike rate-dependent plasticity. The simulated artificial neural networks demonstrate an excellent accuracy level of 91% close to ideal-model synapses. These results provide a fresh background for future research on photoferroelectric vdW systems and put ferroelectric vdW heterostructures on the roadmap for the next neuromorphic computing architectures.
Collapse
Affiliation(s)
- Mohamed Soliman
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Krishna Maity
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Arnaud Gloppe
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Aymen Mahmoudi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Abdelkarim Ouerghi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
| | - Bohdan Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Jean-Francois Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
| |
Collapse
|
32
|
Zhang Y, Huang Z, Jiang J. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2186689. [PMID: 37007672 PMCID: PMC10054230 DOI: 10.1080/14686996.2023.2186689] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.
Collapse
Affiliation(s)
- Yi Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| |
Collapse
|
33
|
Halter M, Bégon-Lours L, Sousa M, Popoff Y, Drechsler U, Bragaglia V, Offrein BJ. A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide. COMMUNICATIONS MATERIALS 2023; 4:14. [PMID: 36843629 PMCID: PMC9936949 DOI: 10.1038/s43246-023-00342-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Accepted: 02/06/2023] [Indexed: 06/18/2023]
Abstract
Brain-inspired computing emerged as a forefront technology to harness the growing amount of data generated in an increasingly connected society. The complex dynamics involving short- and long-term memory are key to the undisputed performance of biological neural networks. Here, we report on sub-µm-sized artificial synaptic weights exploiting a combination of a ferroelectric space charge effect and oxidation state modulation in the oxide channel of a ferroelectric field effect transistor. They lead to a quasi-continuous resistance tuning of the synapse by a factor of 60 and a fine-grained weight update of more than 200 resistance values. We leverage a fast, saturating ferroelectric effect and a slow, ionic drift and diffusion process to engineer a multi-timescale artificial synapse. Our device demonstrates an endurance of more than 10 10 cycles, a ferroelectric retention of more than 10 years, and various types of volatility behavior on distinct timescales, making it well suited for neuromorphic and cognitive computing.
Collapse
Affiliation(s)
- Mattia Halter
- IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
- ETH Zurich - Integrated Systems Laboratory, CH-8092 Zurich, Switzerland
- Present Address: Lumiphase AG, CH-8712 Stäfa, Switzerland
| | - Laura Bégon-Lours
- IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
| | - Marilyne Sousa
- IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
| | - Youri Popoff
- IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
- ETH Zurich - Integrated Systems Laboratory, CH-8092 Zurich, Switzerland
| | - Ute Drechsler
- IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
| | - Valeria Bragaglia
- IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
| | - Bert Jan Offrein
- IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
| |
Collapse
|
34
|
Jiang L, Huang H, Zhang C, Yuan Y, Wang X, Qiu L. One-Step Preparation of Semiconductor/Dielectric Bilayer Structures for the Simulation of Flexible Bionic Photonic Synapses. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7227-7235. [PMID: 36700528 DOI: 10.1021/acsami.2c22223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Flexible synaptic devices with information sensing, processing, and storage functions are indispensable in the development of wearable artificial intelligence electronic systems. Here, a semiconductor/dielectric bilayer structure was prepared by a one-step deposition method and used for the first time in a flexible biomimetic photonic synaptic transistor device. Specifically, poly(3-hexylthiophene)-block-poly(phenyl isocyanide) with pentafluorophenyl ester (P3HT-b-PPI(5F)) was prepared as the device active layer, where the P3HT segment served as a carrier transport channel and optical gate and the PPI(5F) segment was used for charge trapping. Various biomimetic synaptic behaviors, such as excitatory postsynaptic currents, paired-pulse facilitation, and short-term/long-term memory, were successfully simulated under green light stimulation. An ultra-low energy consumption of 1.82 fJ was achieved with a greatly reduced operating voltage. Further, the "Morse-code" optical decoding was simulated using the excellent synaptic plasticity of the device. In addition, flexible synaptic devices were prepared by a one-step deposition method and can be well-affixed to arbitrary substrates. This has promising applications in the field of wearable bionic electronics.
Collapse
Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Hua Huang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Can Zhang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Ye Yuan
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
| |
Collapse
|
35
|
Biocompatible Potato-Starch Electrolyte-Based Coplanar Gate-Type Artificial Synaptic Transistors on Paper Substrates. Int J Mol Sci 2022; 23:ijms232415901. [PMID: 36555546 PMCID: PMC9781766 DOI: 10.3390/ijms232415901] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 12/12/2022] [Accepted: 12/13/2022] [Indexed: 12/23/2022] Open
Abstract
In this study, we propose the use of artificial synaptic transistors with coplanar-gate structures fabricated on paper substrates comprising biocompatible and low-cost potato-starch electrolyte and indium-gallium-zinc oxide (IGZO) channels. The electrical double layer (EDL) gating effect of potato-starch electrolytes enabled the emulation of biological synaptic plasticity. Frequency dependence measurements of capacitance using a metal-insulator-metal capacitor configuration showed a 1.27 μF/cm2 at a frequency of 10 Hz. Therefore, strong capacitive coupling was confirmed within the potato-starch electrolyte/IGZO channel interface owing to EDL formation because of internal proton migration. An electrical characteristics evaluation of the potato-starch EDL transistors through transfer and output curve resulted in counterclockwise hysteresis caused by proton migration in the electrolyte; the hysteresis window linearly increased with maximum gate voltage. A synaptic functionality evaluation with single-spike excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), and multi-spike EPSC resulted in mimicking short-term synaptic plasticity and signal transmission in the biological neural network. Further, channel conductance modulation by repetitive presynaptic stimuli, comprising potentiation and depression pulses, enabled stable modulation of synaptic weights, thereby validating the long-term plasticity. Finally, recognition simulations on the Modified National Institute of Standards and Technology (MNIST) handwritten digit database yielded a 92% recognition rate, thereby demonstrating the applicability of the proposed synaptic device to the neuromorphic system.
Collapse
|
36
|
Zhu S, Li Y, Yelemulati H, Deng X, Li Y, Wang J, Li X, Li G, Gkoupidenis P, Tai Y. An artificial remote tactile device with 3D depth-of-field sensation. SCIENCE ADVANCES 2022; 8:eabo5314. [PMID: 36288316 PMCID: PMC9604525 DOI: 10.1126/sciadv.abo5314] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Accepted: 09/06/2022] [Indexed: 05/25/2023]
Abstract
Flexible tactile neuromorphic devices are becoming important as the impetus for the development of human-machine collaboration. However, accomplishing and further transcending human intelligence with artificial intelligence still confront many barriers. Here, we present a self-powered stretchable three-dimensional remote tactile device (3D-RTD) that performs the depth-of-field (DOF) sensation of external mechanical motions through a conductive-dielectric heterogeneous structure. The device can build a logic relationship precisely between DOF motions of an external active object and sensory potential signals of bipolar sign, frequency, amplitude, etc. The sensory mechanism is revealed on the basis of the electrostatic theory and multiphysics modeling, and the performance is verified via an artificial-biological hybrid system with micro/macroscale interaction. The feasibility of the 3D-RTD as an obstacle-avoidance patch for the blind is systematically demonstrated with a rat. This work paves the way for multimodal neuromorphic device that transcends the function of a biological one toward a new modality for brain-like intelligence.
Collapse
Affiliation(s)
- Shanshan Zhu
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (CAS), and the SIAT Branch, Shenzhen Institute of Artificial Intelligence and Robotics for Society, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory of Human-Machine Intelligence-Synergy Systems, SIAT, CAS, Shenzhen 518055, China
| | - Yuanheng Li
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (CAS), and the SIAT Branch, Shenzhen Institute of Artificial Intelligence and Robotics for Society, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory of Human-Machine Intelligence-Synergy Systems, SIAT, CAS, Shenzhen 518055, China
| | - Huoerhute Yelemulati
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (CAS), and the SIAT Branch, Shenzhen Institute of Artificial Intelligence and Robotics for Society, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory of Human-Machine Intelligence-Synergy Systems, SIAT, CAS, Shenzhen 518055, China
| | - Xinping Deng
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (CAS), and the SIAT Branch, Shenzhen Institute of Artificial Intelligence and Robotics for Society, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory of Human-Machine Intelligence-Synergy Systems, SIAT, CAS, Shenzhen 518055, China
| | - Yongcheng Li
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (CAS), and the SIAT Branch, Shenzhen Institute of Artificial Intelligence and Robotics for Society, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory of Human-Machine Intelligence-Synergy Systems, SIAT, CAS, Shenzhen 518055, China
| | - Jingjing Wang
- CAS Key Laboratory of Brain Connectome and Manipulation, The Brain Cognition and Brain Disease Institute (BCBDI), SIAT, CAS, Shenzhen 518055, China
| | - Xiaojian Li
- CAS Key Laboratory of Brain Connectome and Manipulation, The Brain Cognition and Brain Disease Institute (BCBDI), SIAT, CAS, Shenzhen 518055, China
- Shenzhen-Hong Kong Institute of Brain Science-Shenzhen Fundamental Research Institutions, Shenzhen 518055, China
| | - Guanglin Li
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (CAS), and the SIAT Branch, Shenzhen Institute of Artificial Intelligence and Robotics for Society, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory of Human-Machine Intelligence-Synergy Systems, SIAT, CAS, Shenzhen 518055, China
| | - Paschalis Gkoupidenis
- Molecular Electronics Department, Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany
| | - Yanlong Tai
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (CAS), and the SIAT Branch, Shenzhen Institute of Artificial Intelligence and Robotics for Society, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory of Human-Machine Intelligence-Synergy Systems, SIAT, CAS, Shenzhen 518055, China
| |
Collapse
|
37
|
Cho SW, Jo C, Kim YH, Park SK. Progress of Materials and Devices for Neuromorphic Vision Sensors. NANO-MICRO LETTERS 2022; 14:203. [PMID: 36242681 PMCID: PMC9569410 DOI: 10.1007/s40820-022-00945-y] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Accepted: 09/08/2022] [Indexed: 05/31/2023]
Abstract
The latest developments in bio-inspired neuromorphic vision sensors can be summarized in 3 keywords: smaller, faster, and smarter. (1) Smaller: Devices are becoming more compact by integrating previously separated components such as sensors, memory, and processing units. As a prime example, the transition from traditional sensory vision computing to in-sensor vision computing has shown clear benefits, such as simpler circuitry, lower power consumption, and less data redundancy. (2) Swifter: Owing to the nature of physics, smaller and more integrated devices can detect, process, and react to input more quickly. In addition, the methods for sensing and processing optical information using various materials (such as oxide semiconductors) are evolving. (3) Smarter: Owing to these two main research directions, we can expect advanced applications such as adaptive vision sensors, collision sensors, and nociceptive sensors. This review mainly focuses on the recent progress, working mechanisms, image pre-processing techniques, and advanced features of two types of neuromorphic vision sensors based on near-sensor and in-sensor vision computing methodologies.
Collapse
Affiliation(s)
- Sung Woon Cho
- Department of Advanced Components and Materials Engineering, Sunchon National University, Sunchŏn, Jeonnam, 57922, Republic of Korea
| | - Chanho Jo
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
| | - Sung Kyu Park
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea.
| |
Collapse
|
38
|
Hong X, Huang Y, Tian Q, Zhang S, Liu C, Wang L, Zhang K, Sun J, Liao L, Zou X. Two-Dimensional Perovskite-Gated AlGaN/GaN High-Electron-Mobility-Transistor for Neuromorphic Vision Sensor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202019. [PMID: 35869612 PMCID: PMC9507368 DOI: 10.1002/advs.202202019] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2022] [Revised: 06/09/2022] [Indexed: 05/06/2023]
Abstract
The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN-based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet region, which is an insurmountable obstacle for construction of NVS in practical applications. Herein, an ultrasensitive visual sensor with phototransistor architecture consisting of AlGaN/GaN high-electron-mobility-transistor (HEMT) and two-dimensional Ruddlesden-Popper organic-inorganic halide perovskite (2D OIHP) is reported. Utilizing the significant variation in activation energy for ion transport in 2D OIHP (from 1.3 eV under dark to 0.4 eV under illumination), the sensor can efficiently perceive and storage optical information in ultraviolet-visible region. Meanwhile, the photo-enhanced field-effect mechanism in the depletion-mode HEMT enables gate-tunable negative and positive photoresponse, where some typical optoelectronic synaptic functions including inhibitory and excitatory postsynaptic current as well as paired-pulse facilitation are demonstrated. More importantly, a NVS based on the proposed visual sensor array is constructed for achieving neuromorphic visual preprocessing with an improved color image recognition rate of 100%.
Collapse
Affiliation(s)
- Xitong Hong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082P. R. China
| | - Yulong Huang
- Hunan Key Laboratory for Super Microstructure and Ultrafast ProcessSchool of Physics and ElectronicsCentral South UniversityChangsha410083P. R. China
| | - Qianlei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082P. R. China
| | - Sen Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082P. R. China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082P. R. China
| | - Liming Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082P. R. China
| | - Kai Zhang
- Science and Technology on Monolithic Integrated Circuits and Modules LaboratoryNanjing210016P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast ProcessSchool of Physics and ElectronicsCentral South UniversityChangsha410083P. R. China
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082P. R. China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082P. R. China
- State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082P. R. China
| |
Collapse
|
39
|
Hu M, Yu J, Chen Y, Wang S, Dong B, Wang H, He Y, Ma Y, Zhuge F, Zhai T. A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing. MATERIALS HORIZONS 2022; 9:2335-2344. [PMID: 35820170 DOI: 10.1039/d2mh00466f] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Synaptic transistors that accommodate concurrent signal transmission and learning in a neural network are attracting enormous interest for neuromorphic sensory processing. To remove redundant sensory information while keeping important features, artificial synaptic transistors with non-linear conductance are desired to apply filter processing to sensory inputs. Here, we report the realization of non-linear synapses using a two-dimensional van der Waals (vdW) heterostructure (MoS2/h-BN/graphene) based float gate memory device, in which the semiconductor channel is tailored via a surface acceptor (ZnPc) for subthreshold operation. In addition to usual synaptic plasticity, the memory device exhibits highly non-linear conductance (rectification ratio >106), allowing bidirectional yet only negative/inhibitory current to pass through. We demonstrate that in a lateral coupling network, such a float gate memory device resembles the key lateral inhibition function of horizontal cells for the formation of an ON-center/OFF-surround receptive field. When combined with synaptic plasticity, the lateral inhibition weights are further tunable to enable adjustable edge enhancement for early visual processing. Our results here hopefully open a new scheme toward early sensory perception via lateral inhibitory synaptic transistors.
Collapse
Affiliation(s)
- Man Hu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Jun Yu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Yangyang Chen
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Siqi Wang
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Boyi Dong
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Han Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Yuhui He
- School of optoelectronic and information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Ying Ma
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Fuwei Zhuge
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
| |
Collapse
|
40
|
Li Y, Chen T, Ju X, Salim T. Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO x gate dielectric. NANOSCALE 2022; 14:10245-10254. [PMID: 35815467 DOI: 10.1039/d2nr02136f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsynaptic current, short-term memory plasticity, short-term memory to long-term memory transition, and potentiation and depression) under voltage pulse stimulus. In addition, the TFT shows high responsivity to illumination of light with various wavelengths (ultraviolet and visible light). Synaptic behaviors in response to light pulse stimuli, which could be employed in vision-based neuromorphic applications, are demonstrated. Large conductance change (Gmax/Gmin > 10) and ultra-low non-linearity (α < 0.5) of the potentiation and depression can be inspired by either gate bias pulses or photoelectric pulses with short pulse widths and small amplitudes.
Collapse
Affiliation(s)
- Yuanbo Li
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Tupei Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Xin Ju
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Teddy Salim
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| |
Collapse
|
41
|
Yu H, Zhu Y, Zhu L, Lin X, Wan Q. Recent Advances in Transistor-Based Bionic Perceptual Devices for Artificial Sensory Systems. FRONTIERS IN NANOTECHNOLOGY 2022. [DOI: 10.3389/fnano.2022.954165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
The sensory nervous system serves as the window for human beings to perceive the outside world by converting external stimuli into distinctive spiking trains. The sensory neurons in this system can process multimodal sensory signals with extremely low power consumption. Therefore, new-concept devices inspired by the sensory neuron are promising candidates to address energy issues in nowadays’ robotics, prosthetics and even computing systems. Recent years have witnessed rapid development in transistor-based bionic perceptual devices, and it is urgent to summarize the research and development of these devices. In this review, the latest progress of transistor-based bionic perceptual devices for artificial sense is reviewed and summarized in five aspects, i.e., vision, touch, hearing, smell, and pain. Finally, the opportunities and challenges related to these areas are also discussed. It would have bright prospects in the fields of artificial intelligence, prosthetics, brain-computer interface, robotics, and medical testing.
Collapse
|
42
|
Fu YM, Li H, Wei T, Huang L, Hidayati F, Song A. Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:2933-2942. [PMID: 35782154 PMCID: PMC9245437 DOI: 10.1021/acsaelm.2c00395] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Accepted: 04/25/2022] [Indexed: 05/17/2023]
Abstract
Temperature has always been considered as an essential factor for almost all kinds of semiconductor-based electronic components. In this work, temperature-dependent synaptic plasticity behaviors, which are mimicked by the indium-gallium-zinc oxide thin-film transistors gated with sputtered SiO2 electrolytes, have been studied. With the temperature increasing from 303 to 323 K, the electrolyte capacitance decreases from 0.42 to 0.11 μF cm-2. The mobility increases from 1.4 to 3.7 cm2 V-1 s-1, and the threshold voltage negatively shifts from -0.23 to -0.51 V. Synaptic behaviors under both a single pulse and multiple pulses are employed to study the temperature dependence. With the temperature increasing from 303 to 323 K, the post-synaptic current (PSC) at the resting state increases from 1.8 to 7.3 μA. Under a single gate pulse of 1 V and 1 s, the PSC signal altitude and the PSC retention time decrease from 2.0 to 0.7 μA and 5.1 × 102 to 2.5 ms, respectively. A physical model based on the electric field-induced ion drifting, ionic-electronic coupling, and gradient-coordinated ion diffusion is proposed to understand these temperature-dependent synaptic behaviors. Based on the experimental data on individual transistors, temperature-modulated pattern learning and memorizing behaviors are conceptually demonstrated. The in-depth investigation of the temperature dependence helps pave the way for further electrolyte-gated transistor-based neuromorphic applications.
Collapse
Affiliation(s)
- Yang Ming Fu
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Hu Li
- Shandong
Technology Center of Nanodevices and Integration, State Key Laboratory
of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250101, China
| | - Tianye Wei
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Long Huang
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Faricha Hidayati
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Aimin Song
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
- Shandong
Technology Center of Nanodevices and Integration, State Key Laboratory
of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250101, China
| |
Collapse
|
43
|
Liang K, Wang R, Huo B, Ren H, Li D, Wang Y, Tang Y, Chen Y, Song C, Li F, Ji B, Wang H, Zhu B. Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot-Metal Oxide Semiconductor Heterojunctions. ACS NANO 2022; 16:8651-8661. [PMID: 35451308 DOI: 10.1021/acsnano.2c00439] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Optoelectronic synaptic transistors with hybrid heterostructure channels have been extensively developed to construct artificial visual systems, inspired by the human visual system. However, optoelectronic transistors taking full advantages of superior optoelectronic synaptic behaviors, low-cost processes, low-power consumption, and environmental benignity remained a challenge. Herein, we report a fully printed, high-performance optoelectronic synaptic transistor based on hybrid heterostructures of heavy-metal-free InP/ZnSe core/shell quantum dots (QDs) and n-type SnO2 amorphous oxide semiconductors (AOSs). The elaborately designed heterojunction improves the separation efficiency of photoexcited charges, leading to high photoresponsivity and tunable synaptic weight changes. Under the coordinated modulation of electrical and optical modes, important biological synaptic behaviors, including excitatory postsynaptic current, short/long-term plasticity, and paired-pulse facilitation, were demonstrated with a low power consumption (∼5.6 pJ per event). The InP/ZnSe QD/SnO2 based artificial vision system illustrated a significantly improved accuracy of 91% in image recognition, compared to that of bare SnO2 based counterparts (58%). Combining the outstanding synaptic characteristics of both AOS materials and heterojunction structures, this work provides a printable, low-cost, and high-efficiency strategy to achieve advanced optoelectronic synapses for neuromorphic electronics and artificial intelligence.
Collapse
Affiliation(s)
- Kun Liang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Rui Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Bingbing Huo
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Huihui Ren
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Dingwei Li
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yan Wang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yingjie Tang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yitong Chen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chunyan Song
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Fanfan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Botao Ji
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| |
Collapse
|
44
|
Ahn DH, Hu S, Ko K, Park D, Suh H, Kim GT, Han JH, Song JD, Jeong Y. Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24592-24601. [PMID: 35580309 DOI: 10.1021/acsami.2c04404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong stimulus for synaptic update because of their inefficient hot-carrier injection into the charge trapping layer, consequently causing a slow speed operation and large power consumption. Here, we propose a highly efficient charge trap synapse using III-V materials-based tunnel field-effect transistor (TFET). Our synaptic TFETs present superior subthreshold swing and improved charge trapping ability utilizing both carriers as charge trapping sources: hot holes created by impact ionization in the narrow bandgap InGaAs after being provided from the p+-source, and band-to-band tunneling hot electrons (BBHEs) generated at the abrupt p+n junctions in the TFETs. Thanks to these advances, our devices achieved outstanding efficiency in synaptic characteristics with a 5750 times faster synaptic update speed and 51 times lower sub-fJ/um2 energy consumption per single synaptic update in comparison to the MOSFET-based synapse. An artificial neural network (ANN) simulation also confirmed a high recognition accuracy of handwritten digits up to ∼90% in a multilayer perceptron neural network based on our synaptic devices.
Collapse
Affiliation(s)
- Dae-Hwan Ahn
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| | - Suman Hu
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| | - Kyeol Ko
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| | - Donghee Park
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| | - Hoyoung Suh
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University 1, Jongam-ro, Seongbuk-gu, Seoul 02841, South Korea
| | - Jae-Hoon Han
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| | - Jin-Dong Song
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| | - YeonJoo Jeong
- Korea Institute of Science and Technology (KIST) 5, 14-gil, Hwarang-ro, Seongbuk-gu, Seoul 02792, South Korea
| |
Collapse
|
45
|
Jin C, Liu W, Xu Y, Huang Y, Nie Y, Shi X, Zhang G, He P, Zhang J, Cao H, Sun J, Yang J. Artificial Vision Adaption Mimicked by an Optoelectrical In 2O 3 Transistor Array. NANO LETTERS 2022; 22:3372-3379. [PMID: 35343229 DOI: 10.1021/acs.nanolett.2c00599] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Simulation of biological visual perception has gained considerable attention. In this paper, an optoelectrical In2O3 transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.
Collapse
Affiliation(s)
- Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Wanrong Liu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Yulong Huang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Yiling Nie
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Xiaofang Shi
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Gengming Zhang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Pei He
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Jian Zhang
- School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R. China
| | - Hongtao Cao
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Junliang Yang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| |
Collapse
|
46
|
Kim MK, Kim IJ, Lee JS. CMOS-compatible compute-in-memory accelerators based on integrated ferroelectric synaptic arrays for convolution neural networks. SCIENCE ADVANCES 2022; 8:eabm8537. [PMID: 35394830 PMCID: PMC8993117 DOI: 10.1126/sciadv.abm8537] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2021] [Accepted: 02/22/2022] [Indexed: 05/31/2023]
Abstract
Convolutional neural networks (CNNs) have gained much attention because they can provide superior complex image recognition through convolution operations. Convolution processes require repeated multiplication and accumulation operations, which are difficult tasks for conventional computing systems. Compute-in-memory (CIM) that uses parallel data processing is an ideal device structure for convolution operations. CIM based on two-terminal synaptic devices with a crossbar structure has been developed, but unwanted leakage current paths and the high-power consumption remain as the challenges. Here, we demonstrate integrated ferroelectric thin-film transistor (FeTFT) synaptic arrays that can provide efficient parallel programming and data processing for CNNs by the selective and accurate control of polarization in the ferroelectric layer. In addition, three-terminal FeTFTs can act as both nonvolatile memory and access device, which tackle issues from two-terminal devices. An integrated FeTFT synaptic array with parallel programming capabilities can perform convolution operations to extract image features with a high-recognition accuracy.
Collapse
|
47
|
Kim SH, Cho WJ. Artificial Synapses Based on Bovine Milk Biopolymer Electric-Double-Layer Transistors. Polymers (Basel) 2022; 14:polym14071372. [PMID: 35406246 PMCID: PMC9003531 DOI: 10.3390/polym14071372] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 03/22/2022] [Accepted: 03/25/2022] [Indexed: 02/01/2023] Open
Abstract
With the growing demand for bio- and eco-friendly artificial synapses, we propose a novel synaptic transistor using natural bovine-milk-based biocompatible polymers as an electrical double layer (EDL). A method for forming an EDL membrane, which plays a key role in synaptic devices, was established using a milk-based biocompatible polymer. The frequency-dependent capacitance of a milk-based polymer-EDL was evaluated by constructing an EDL capacitor (EDLC) with indium-tin-oxide (ITO) electrode. As a result, a significantly large capacitance (1.48 μF/cm2 at 1 Hz) was identified as an EDL effect due to the proton charge of the bovine-milk-based polymer, which is much more superior compared to conventional insulating materials such as SiO2. Subsequently, by using a milk-based polymer-EDL membrane in the fabrication of electronic synaptic transistors, we successfully implemented important synaptic functions, such as paired-pulse facilitation, dynamic filtering, and synaptic-weight-integration-based logic operations. Therefore, the proposed milk-based biocompatible polymer-EDL membrane offers new opportunities for building eco-friendly and biodegradable artificial synaptic systems.
Collapse
|
48
|
Jiang L, Xu C, Wu X, Zhao X, Zhang L, Zhang G, Wang X, Qiu L. Deep Ultraviolet Light Stimulated Synaptic Transistors Based on Poly(3-hexylthiophene) Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11718-11726. [PMID: 35213133 DOI: 10.1021/acsami.1c23986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Deep ultraviolet (DUV)-light-stimulated artificial synaptic devices exhibit potential applications in various disciplines including intelligent military monitoring, biological and medical analysis, flame detection, etc. Along these lines, we report here a DUV-light-stimulated synaptic transistor fabricated on a poly(3-hexylthiophene) (P3HT) ultrathin film that responds selectively to DUV light. Significantly, our devices have the ability to successfully simulate various synapse-like behaviors including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), STM-to-LTM transition, and learning and forgetting behaviors. Moreover, the proposed artificial synaptic structures were also fabricated on flexible poly(ethylene terephthalate) (PET) substrates and also successfully simulated typical synaptic behaviors, which could be of great importance for wearable applications.
Collapse
Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Chenyin Xu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaocheng Wu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xue Zhao
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Lijun Zhang
- College of Light-Textile Engineering and Art, Anhui Agricultural University, Hefei, Anhui 230036, P. R. China
| | - Guobing Zhang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, and Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| |
Collapse
|
49
|
Liu L, Xu W, Ni Y, Xu Z, Cui B, Liu J, Wei H, Xu W. Stretchable Neuromorphic Transistor That Combines Multisensing and Information Processing for Epidermal Gesture Recognition. ACS NANO 2022; 16:2282-2291. [PMID: 35083912 DOI: 10.1021/acsnano.1c08482] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We fabricated a nanowire-channel intrinsically stretchable neuromorphic transistor (NISNT) that perceives both tactile and visual information and emulates neuromorphic processing capabilities. The device demonstrated excellent stretching endurance of 1000 stretch cycles while retaining stable electrical properties. The device was then applied as a multisensitive afferent nerve that processes information in parallel. Compatible with skin deformation, the devices are attached to fingers to serve as conformal strain sensors and neuromorphic information-processing units for gesture recognition. The excitatory postsynaptic current in each device represents shape changes and is then analyzed using softmax activation processing of the neural network to recognize gestures. A multistage neural network that uses NISNT was used to further confirm the gestures. This work demonstrated an idea toward multisensory artificial nerves and neuromorphic systems.
Collapse
Affiliation(s)
- Lu Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Wenlong Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Binbin Cui
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| |
Collapse
|
50
|
Lin YC, Yang WC, Chiang YC, Chen WC. Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100109] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| |
Collapse
|