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Hu Z, Hu Y, Huang L, Zhong W, Zhang J, Lei D, Chen Y, Ni Y, Liu Y. Recent Progress in Organic Electrochemical Transistor-Structured Biosensors. BIOSENSORS 2024; 14:330. [PMID: 39056606 PMCID: PMC11274720 DOI: 10.3390/bios14070330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2024] [Revised: 06/30/2024] [Accepted: 07/01/2024] [Indexed: 07/28/2024]
Abstract
The continued advancement of organic electronic technology will establish organic electrochemical transistors as pivotal instruments in the field of biological detection. Here, we present a comprehensive review of the state-of-the-art technology and advancements in the use of organic electrochemical transistors as biosensors. This review provides an in-depth analysis of the diverse modification materials, methods, and mechanisms utilized in organic electrochemical transistor-structured biosensors (OETBs) for the selective detection of a wide range of target analyte encompassing electroactive species, electro-inactive species, and cancer cells. Recent advances in OETBs for use in sensing systems and wearable and implantable applications are also briefly introduced. Finally, challenges and opportunities in the field are discussed.
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Affiliation(s)
- Zhuotao Hu
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
| | - Yingchao Hu
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
| | - Lu Huang
- School of Physics & Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China;
| | - Wei Zhong
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
| | - Jianfeng Zhang
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
| | - Dengyun Lei
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
| | - Yayi Chen
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
| | - Yao Ni
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
| | - Yuan Liu
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China; (Z.H.); (Y.H.); (W.Z.); (J.Z.); (D.L.); (Y.C.)
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Kim D, Jeong H, Pyo G, Heo SJ, Baik S, Kim S, Choi HS, Kwon H, Jang JE. Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401250. [PMID: 38741378 PMCID: PMC11267387 DOI: 10.1002/advs.202401250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 04/12/2024] [Indexed: 05/16/2024]
Abstract
Ferroelectric field-effect transistors (FeFETs) are increasingly important for in-memory computing and monolithic 3D (M3D) integration in system-on-chip (SoC) applications. However, the high-temperature processing required by most ferroelectric memories can lead to thermal damage to the underlying device layers, which poses significant physical limitations for 3D integration processes. To solve this problem, the study proposes using a nanosecond pulsed laser for selective annealing of hafnia-based FeFETs, enabling precise control of heat penetration depth within thin films. Sufficient thermal energy is delivered to the IGZO oxide channel and HZO ferroelectric gate oxide without causing thermal damage to the bottom layer, which has a low transition temperature (<250 °C). Using optimized laser conditions, a fast response time (<1 µs) and excellent stability (cycle > 106, retention > 106 s) are achieved in the ferroelectric HZO film. The resulting FeFET exhibited a wide memory window (>1.7 V) with a high on/off ratio (>105). In addition, moderate ferroelectric properties (2·Pr of 14.7 µC cm-2) and pattern recognition rate-based linearity (potentiation: 1.13, depression: 1.6) are obtained. These results demonstrate compatibility in HZO FeFETs by specific laser annealing control and thin-film layer design for various structures (3D integrated, flexible) with neuromorphic applications.
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Affiliation(s)
- Dongsu Kim
- Department of Electrical Engineering and Computer ScienceDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
| | - Heejae Jeong
- Department of Electrical Engineering and Computer ScienceDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
| | - Goeun Pyo
- Department of Electrical Engineering and Computer ScienceDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
| | - Su Jin Heo
- Department of Electrical Engineering and Computer ScienceDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
- Department of EngineeringInstitute for ManufacturingUniversity of CambridgeCambridgeCB3 0FSUnited Kingdom
| | - Seunghun Baik
- Department of Electrical Engineering and Computer ScienceDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
| | - Seonhyoung Kim
- Department of Robotics and Mechatronics EngineeringDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
| | - Hong Soo Choi
- Department of Robotics and Mechatronics EngineeringDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
| | - Hyuk‐Jun Kwon
- Department of Electrical Engineering and Computer ScienceDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
| | - Jae Eun Jang
- Department of Electrical Engineering and Computer ScienceDaegu Gyeongbuk Institute of Science & Technology (DGIST)Daegu42988South Korea
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Mah DG, Park H, Cho WJ. Synaptic Plasticity Modulation of Neuromorphic Transistors through Phosphorus Concentration in Phosphosilicate Glass Electrolyte Gate. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:203. [PMID: 38251166 PMCID: PMC10820041 DOI: 10.3390/nano14020203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Revised: 01/05/2024] [Accepted: 01/15/2024] [Indexed: 01/23/2024]
Abstract
This study proposes a phosphosilicate glass (PSG)-based electrolyte gate synaptic transistor with varying phosphorus (P) concentrations. A metal oxide semiconductor capacitor structure device was employed to measure the frequency-dependent (C-f) capacitance curve, demonstrating that the PSG electric double-layer capacitance increased at 103 Hz with rising P concentration. Fourier transform infrared spectroscopy spectra analysis facilitated a theoretical understanding of the C-f curve results, examining peak differences in the P-OH structure based on P concentration. Using the proposed synaptic transistors with different P concentrations, changes in the hysteresis window were investigated by measuring the double-sweep transfer curves. Subsequently, alterations in proton movement within the PSG and charge characteristics at the channel/PSG electrolyte interface were observed through excitatory post-synaptic currents, paired-pulse facilitation, signal-filtering functions, resting current levels, and potentiation and depression characteristics. Finally, we demonstrated the proposed neuromorphic system's feasibility based on P concentration using the Modified National Institute of Standards and Technology learning simulations. The study findings suggest that, by adjusting the PSG film's P concentration for the same electrical stimulus, it is possible to selectively mimic the synaptic signal strength of human synapses. Therefore, this approach can positively contribute to the implementation of various neuromorphic systems.
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Affiliation(s)
- Dong-Gyun Mah
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Hamin Park
- Department of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
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Wang X, Yang H, Li E, Cao C, Zheng W, Chen H, Li W. Stretchable Transistor-Structured Artificial Synapses for Neuromorphic Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205395. [PMID: 36748849 DOI: 10.1002/smll.202205395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Revised: 01/12/2023] [Indexed: 05/04/2023]
Abstract
Stretchable synaptic transistors, a core technology in neuromorphic electronics, have functions and structures similar to biological synapses and can concurrently transmit signals and learn. Stretchable synaptic transistors are usually soft and stretchy and can accommodate various mechanical deformations, which presents significant prospects in soft machines, electronic skin, human-brain interfaces, and wearable electronics. Considerable efforts have been devoted to developing stretchable synaptic transistors to implement electronic device neuromorphic functions, and remarkable advances have been achieved. Here, this review introduces the basic concept of artificial synaptic transistors and summarizes the recent progress in device structures, functional-layer materials, and fabrication processes. Classical stretchable synaptic transistors, including electric double-layer synaptic transistors, electrochemical synaptic transistors, and optoelectronic synaptic transistors, as well as the applications of stretchable synaptic transistors in light-sensory systems, tactile-sensory systems, and multisensory artificial-nerves systems, are discussed. Finally, the current challenges and potential directions of stretchable synaptic transistors are analyzed. This review presents a detailed introduction to the recent progress in stretchable synaptic transistors from basic concept to applications, providing a reference for the development of stretchable synaptic transistors in the future.
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Affiliation(s)
- Xiumei Wang
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Huihuang Yang
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Enlong Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Chunbin Cao
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Wen Zheng
- School of Science, Anhui Agricultural University, Hefei, 230036, China
- School of Information & Computer, Anhui Agricultural University, Hefei, 230036, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
- National Key Laboratory of Integrated Circuit Chips and Systems, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
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7
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Chiang YC, Yang WC, Hung CC, Ercan E, Chiu YC, Lin YC, Chen WC. Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1675-1684. [PMID: 36562738 DOI: 10.1021/acsami.2c18064] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Chien Hung
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Cheng Chiu
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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Zheng C, Liao Y, Wang J, Zhou Y, Han ST. Flexible Floating-Gate Electric-Double-Layer Organic Transistor for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:57102-57112. [PMID: 36516355 DOI: 10.1021/acsami.2c20925] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The key to the study of flexible neuromorphic computing is the excellent weight update characteristic of neuromorphic devices. Electric-double-layer transistors (EDLTs) include high transconductance, excellent stability of threshold voltage, linear weight updates, and repetitive ion-concentration-dependent switching properties. However, up to now, there is no report on a flexible EDLT that provides all the aforementioned performance characteristics. Here, a planar flexible floating-gate EDLT including an excellent linear/symmetric weight update, a large number (>800) of conductance states, repetitive switching endurance (>100 cycles), and low variation in weight update is reported. After 800 signal stimulations, it is found that the nonlinearity values of LTP are between 0.20 and 0.85, those of LTD fall between 0.66 and 1.55, the symmetricity values are between 120.7 and 639.8, and the dynamic range is between 150 and 352 nS. The study of 8 × 8 flexible floating-gate EDLT arrays shows that the average deviation and standard deviation between the experimental and theoretical values are 1.36 and 1.93, respectively, indicating that the conductance regulation in the array has a relatively small deviation. The different bending angles and the mechanical stability of the floating-gate EDLT are also studied, which exhibit the excellent bending properties. Furthermore, we studied the recognition of MNIST handwritten digit images by a three-layer perceptron artificial neural network with the experimental weight update, and the maximal recognition accuracy is up to 87.8%.
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Affiliation(s)
- Chaoyue Zheng
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou313001, P.R. China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen518060, P.R. China
| | - Yuan Liao
- Institute for Advanced Study, Shenzhen University, Shenzhen518060, P.R. China
| | - Junjie Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen518060, P.R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen518060, P.R. China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen518060, P.R. China
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Zheng X, Chen M, Xie Y. Non-equilibrium spin-transport properties of Co/phosphorene/Co MTJ with non-collinear electrodes under mechanical bending. Phys Chem Chem Phys 2022; 24:24328-24334. [PMID: 36177914 DOI: 10.1039/d2cp02658a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Monolayer phosphorene has outstanding mechanical flexibility, making it rather attractive in flexible spintronics that are based on 2D materials. Here, we report a first-principles study on non-equilibrium electronic-transport properties of the Co/phosphorene/Co magnetic tunnel junction (MTJ) with two α-Co electrodes. The magnetic moments of the two electrodes are considered in the parallel configuration (PC) and the anti-parallel configuration (APC). The tunneling current through the MTJ is investigated at a small bias from 0 to 40 mV when mechanical bending is applied on the MTJ with different central angle (θ) values. For both the PC and APC, the tunneling current increases evidently and monotonously with increasing mechanical bending for 25° < θ < 40°, as compared to that without bending, which is mainly due to the reduced tunnel barrier. In the PC, the spin-injection efficiency (SIE) of the current is largely increased at a small bias from 0 to 40 mV for 25° ≤ θ ≤ 30° with a maximum of 90%, while the SIE is overall increased under all mechanical bending angles for the APC. The tunnel magnetoresistance is decreased with an increasing bias voltage, which can be largely enhanced for θ ≥ 25°, especially at small bias. Our results indicate that the Co/phosphorene/Co MTJ has promising applications in flexible low-power spintronic devices.
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Affiliation(s)
- Xiaolong Zheng
- Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Mingyan Chen
- Hongzhiwei Technology (Shanghai) Co., Ltd., 1599 Xinjinqiao Road, Pudong, Shanghai, China.
| | - Yiqun Xie
- Department of Physics, Shanghai Normal University, Shanghai 200234, China
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Zhang R, Lai Y, Chen W, Teng C, Sun Y, Yang L, Wang J, Liu B, Cheng HM. Carrier Trapping in Wrinkled 2D Monolayer MoS 2 for Ultrathin Memory. ACS NANO 2022; 16:6309-6316. [PMID: 35324162 DOI: 10.1021/acsnano.2c00350] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.
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Affiliation(s)
- Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yujie Sun
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Liusi Yang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jingyun Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- Faculty of Materials and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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11
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Lee C, Lee W, Kim H, Kim Y. Water-Soluble Reactive Polymer Blends for Stable Memory Layers in Low-Voltage Nonvolatile Organic Memory Transistors with High Mobility and Data-Retention Characteristics. Macromol Rapid Commun 2022; 43:e2100922. [PMID: 35119151 DOI: 10.1002/marc.202100922] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 01/25/2022] [Indexed: 11/11/2022]
Abstract
Here we demonstrate low-voltage nonvolatile organic memory transistors, featuring high charge-carrier mobility and outstanding data-retention characteristics, by employing water-soluble reactive polymer blends as a gate-insulating memory layer. Blend films of poly(vinyl alcohol) (PVA) and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA) (PVA:PAMPSA) were prepared from their aqueous solutions with various molar ratios of PAMPSA (0∼18 mol%) and thermally annealed at 70 ℃ and 110 ℃. Organic field-effect transistors (OFETs) were fabricated by depositing poly(3-hexylthiophene) (P3HT) channel layers on the thermally-treated PVA:PAMPSA films. Results showed that the hole mobility of OFETs was remarkably increased (ca. 294 times at 70 ℃ and ca. 42 times at 110 ℃) by adding only 2 mol% PAMPSA to the PVA films and further improved at 10 mol% PAMPSA (>11.7 cm2/Vs at 70 ℃ and >3.8 cm2/Vs at 110 ℃). The hysteresis characteristics were rather strengthened for the PVA:PAMPSA layers by annealing at 110 ℃ due to the formation of cross-linking sites, even though the OFETs with the pristine PVA layers did almost lose hysteresis characteristics at 110 ℃. The optimized OFETs with the PVA:PAMPSA layers (10 mol%, 110 ℃) delivered excellent data retention characteristics during >10,000 memory cycles at a voltage range of -5 ∼ +5 V. This article is protected by copyright. All rights reserved.
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Affiliation(s)
- Chulyeon Lee
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Woongki Lee
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Hwajeong Kim
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea.,Priority Research Center, Research Institute of Environmental Science & Technology, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Youngkyoo Kim
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
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12
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Lin YC, Yang WC, Chiang YC, Chen WC. Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100109] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
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13
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Zhong G, An F, Qu K, Dong Y, Yang Z, Dai L, Xie S, Huang R, Luo Z, Li J. Highly Flexible Freestanding BaTiO 3 -CoFe 2 O 4 Heteroepitaxial Nanostructure Self-Assembled with Room-Temperature Multiferroicity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104213. [PMID: 34816590 DOI: 10.1002/smll.202104213] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2021] [Revised: 09/28/2021] [Indexed: 06/13/2023]
Abstract
Multiferroics with simultaneous electric and magnetic orderings are highly desirable for sensing, actuation, data storage, and bio-inspired systems, yet developing flexible materials with robust multiferroic properties at room temperature is a long-term challenge. Utilizing water-soluble Sr3 Al2 O6 as a sacrificial layer, the authors have successfully self-assembled a freestanding BaTiO3 -CoFe2 O4 heteroepitaxial nanostructure via pulse laser deposition, and confirmed its epitaxial growth in both out-of-plane and in-plane directions, with highly ordered CoFe2 O4 nanopillars embedded in a single crystalline BaTiO3 matrix free of substrate constraint. The freestanding nanostructure enjoys super flexibility and mechanical integrity, not only capable of spontaneously curving into a roll, but can also be bent with a radius as small as 4.23 µm. Moreover, piezoelectricity and ferromagnetism are demonstrated at both microscopic and macroscopic scales, confirming its robust multiferroicity at room temperature. This work establishes an effective route for flexible multiferroic materials, which have the potential for various practical applications.
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Affiliation(s)
- Gaokuo Zhong
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Feng An
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Ke Qu
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Yongqi Dong
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, China
| | - Zhenzhong Yang
- Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai, Shanghai, 200241, China
| | - Liyufen Dai
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China
| | - Shuhong Xie
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai, Shanghai, 200241, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, China
| | - Jiangyu Li
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
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14
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Nassar GM, Chung J, Trinh CK, El-Shehawy AA, El-Barbary AA, Kang Y, Lee JS. Polymers based on thieno[3,4- c]pyrrole-4,6-dione and pyromellitic diimide by CH–CH arylation reaction for high-performance thin-film transistors. RSC Adv 2022; 12:31180-31185. [PMID: 36349028 PMCID: PMC9623454 DOI: 10.1039/d2ra04602d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2022] [Accepted: 10/24/2022] [Indexed: 11/06/2022] Open
Abstract
Three homopolymers were successfully synthesized by direct CH–CH arylation polymerization of thieno[3,4-c]pyrrole-4,6-dione or pyromellitic diimide derivatives affording highly purified polymers with high molecular weights (43.0–174.7 K). Thieno[3,4-c]pyrrole-4,6-dione and pyromellitic diimide derivatives are considered as electron-withdrawing units. The synthesized homopolymers P1, P2, and P3 showed band gaps in the range of 2.13–2.08 eV, respectively. The electron mobilities of the three homopolymers have been investigated. The thin film transistor for P1 prepared by the eutectic-melt-assisted nanoimprinting method achieved an electron mobility of 2.11 × 10−3 cm2 s−1 V−1. Based on the obtained results, the synthesized polymers can be used as potential electron acceptors in solar cell applications. The homopolymers P1, P2 and P3 were successfully synthesized by direct CH–CH arylation polymerization in an eco-friendly one-step coupling reaction. They present n-type properties for potential applications as acceptor polymers.![]()
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Affiliation(s)
- Gamal M. Nassar
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea
- Department of Chemistry, Faculty of Science, Tanta University, Tanta 31527, Egypt
| | - Jeyon Chung
- Department of Chemistry, Institute of Nano-Science and Technology and Research Institute for Natural Sciences, Hanyang University, Wangsimni-Ro, Seongdong-Gu, Seoul, 04763, Korea
| | - Cuc Kim Trinh
- Chemical Engineering in Advanced Materials and Renewable Energy Research Group, School of Engineering and Technology, Van Lang University, Ho Chi Minh City, Vietnam
| | - Ashraf A. El-Shehawy
- Department of Chemistry, Faculty of Science, Kafrelsheikh University, Kafrelsheikh 33516, Egypt
| | - Ahmed A. El-Barbary
- Department of Chemistry, Faculty of Science, Tanta University, Tanta 31527, Egypt
| | - Youngjong Kang
- Department of Chemistry, Institute of Nano-Science and Technology and Research Institute for Natural Sciences, Hanyang University, Wangsimni-Ro, Seongdong-Gu, Seoul, 04763, Korea
| | - Jae-Suk Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea
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15
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Liu J, Shen Z, Ye Y, Yang Z, Gong Z, Ye B, Qiu Y, Huang Q, Xu L, Zhou Y, Wu W, Li F, Guo T. Mixed-Halide Perovskite Film-Based Neuromorphic Phototransistors for Mimicking Experience-History-Dependent Sensory Adaptation. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47807-47816. [PMID: 34582174 DOI: 10.1021/acsami.1c11866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Sensory adaptation is an essential function for humans to live on the earth. Herein, a hybrid synaptic phototransistor based on the mixed-halide perovskite/organic semiconductor film is reported. This hybrid phototransistor achieves photosensitive performance including a high photoresponsivity over 4 × 103 A/W and an excellent specific detectivity of 2.8 × 1016 Jones. Due to the photoinduced halide-ion segregation of the mixed-halide perovskites and their slow recovery properties, the experience-history-dependent sensory adaptation behavior can be mimicked. Moreover, the light pulse width, intensity, light wavelength, and gate bias can be used to regulate the adaptation processes to improve its adaptability and perceptibility in different environments. The CsPbBrxI3-x/organic semiconductor hybrid films produced by spin coating are beneficial to large-scale fabrication. This study fabricates a novel solution-processable light-stimulated synapse based on inorganic perovskites for mimicking the human sensory adaptation that makes it possible to approach artificial neural sensory systems.
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Affiliation(s)
- Jiahui Liu
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Zihong Shen
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Yuliang Ye
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Zunxian Yang
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
- Mindu Innovation Laboratory, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Zhipeng Gong
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Bingqing Ye
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Yinglin Qiu
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Qiaocan Huang
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Lei Xu
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Yuanqing Zhou
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Wenbo Wu
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
| | - Fushan Li
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
- Mindu Innovation Laboratory, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Tailiang Guo
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, P. R. China
- Mindu Innovation Laboratory, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
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16
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Ercan E, Lin Y, Chen C, Fang Y, Yang W, Yang Y, Chen W. Realizing fast photoinduced recovery with polyfluorene‐
block
‐poly
(vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices. JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1002/pol.20210393] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Chun‐Kai Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yi‐Kai Fang
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
| | - Wei‐Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yun‐Fang Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Wen‐Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
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17
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Naqi M, Kwon N, Jung SH, Pujar P, Cho HW, Cho YI, Cho HK, Lim B, Kim S. High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1101. [PMID: 33923237 PMCID: PMC8146410 DOI: 10.3390/nano11051101] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2021] [Revised: 04/22/2021] [Accepted: 04/22/2021] [Indexed: 11/16/2022]
Abstract
Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from -20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.
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Affiliation(s)
| | | | | | | | | | | | | | - Byungkwon Lim
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (M.N.); (N.K.); (S.H.J.); (P.P.); (H.W.C.); (Y.I.C.); (H.K.C.)
| | - Sunkook Kim
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (M.N.); (N.K.); (S.H.J.); (P.P.); (H.W.C.); (Y.I.C.); (H.K.C.)
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18
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Jeon YR, Choi J, Kwon JD, Park MH, Kim Y, Choi C. Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe 2 Material. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10161-10170. [PMID: 33591167 DOI: 10.1021/acsami.0c18784] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigated chemical vapor-deposited (CVD) two-dimensional (2D) niobium diselenide (NbSe2) material for the resistive switching and synaptic characteristics. Three different atomic switch devices with Ag/HfO2/Pt, Ag/Ti/HfO2/Pt, and Ag/NbSe2/HfO2/Pt were studied as both memory and neuromorphic devices. Both the inserted Ti and NbSe2 buffer layers effectively control the stochastic Ag-ion diffusion, leading to suppressed variation of switching characteristics, which is a critical issue in an atomic switch device. Especially, the device with the 2D NbSe2 buffer layer strikingly enhanced the device reliability in both endurance and retention. In conjunction with scanning transmission electron microscopy (STEM) and energy-dispersive spectrometry (EDS) analysis of the control of the Ag-ion migration, it was understood that filament connection is interrelated with the SET and RESET processes. Besides resistive behaviors in the memory device, various synapse functions such as spike-rate-dependent plasticity (SRDP), forgetting curve, potentiation, and depression were demonstrated with an atomic switch with the 2D NbSe2 buffer layer. Furthermore, the emulated long-term synaptic property was simulated using the MNIST 28 × 28 pixel database. Using adopting a CVD 2D NbSe2 blocking layer, the stochastic Ag-ion diffusion behavior is well-controlled and therefore stable switching and synapse functions are attained.
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Affiliation(s)
- Yu-Rim Jeon
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jungmin Choi
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Min Hyuk Park
- School of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of Korea
| | - Yonghun Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
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19
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Huo W, Ling W, Wang Z, Li Y, Zhou M, Ren M, Li X, Li J, Xia Z, Liu X, Huang X. Miniaturized DNA Sequencers for Personal Use: Unreachable Dreams or Achievable Goals. FRONTIERS IN NANOTECHNOLOGY 2021. [DOI: 10.3389/fnano.2021.628861] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023] Open
Abstract
The appearance of next generation sequencing technology that features short read length with high measurement throughput and low cost has revolutionized the field of life science, medicine, and even computer science. The subsequent development of the third-generation sequencing technologies represented by nanopore and zero-mode waveguide techniques offers even higher speed and long read length with promising applications in portable and rapid genomic tests in field. Especially under the current circumstances, issues such as public health emergencies and global pandemics impose soaring demand on quick identification of origins and species of analytes through DNA sequences. In addition, future development of disease diagnosis, treatment, and tracking techniques may also require frequent DNA testing. As a result, DNA sequencers with miniaturized size and highly integrated components for personal and portable use to tackle increasing needs for disease prevention, personal medicine, and biohazard protection may become future trends. Just like many other biological and medical analytical systems that were originally bulky in sizes, collaborative work from various subjects in engineering and science eventually leads to the miniaturization of these systems. DNA sequencers that involve nanoprobes, detectors, microfluidics, microelectronics, and circuits as well as complex functional materials and structures are extremely complicated but may be miniaturized with technical advancement. This paper reviews the state-of-the-art technology in developing essential components in DNA sequencers and analyzes the feasibility to achieve miniaturized DNA sequencers for personal use. Future perspectives on the opportunities and associated challenges for compact DNA sequencers are also identified.
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20
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Hsu LC, Isono T, Lin YC, Kobayashi S, Chiang YC, Jiang DH, Hung CC, Ercan E, Yang WC, Hsieh HC, Tajima K, Satoh T, Chen WC. Stretchable OFET Memories: Tuning the Morphology and the Charge-Trapping Ability of Conjugated Block Copolymers through Soft Segment Branching. ACS APPLIED MATERIALS & INTERFACES 2021; 13:2932-2943. [PMID: 33423476 DOI: 10.1021/acsami.0c18820] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The mechanical properties and structural design flexibility of charge-trapping polymer electrets have led to their widespread use in organic field-effect transistor (OFET) memories. For example, in the electrets of polyfluorene-based conjugated/insulating block copolymers (BCPs), the confined fiberlike polyfluorene nanostructures in the insulating polymer matrix act as effective hole-trapping sites, leading to controllable memory performance through the design of BCPs. However, few studies have reported intrinsically stretchable charge-trapping materials and their memory device applications, and a practical method to correlate the thin-film morphology of BCP electrets with their charge-trapping ability has not yet been developed. In this study, a series of new conjugated/insulating BCPs, poly(9,9-di-n-hexyl-2,7-fluorene)-block-poly(δ-decanolactone)s (PF-b-PDLx, x = 1-3), as stretchable hole-trapping materials are reported. The linear and branched PDL blocks with comparable molecular weights were used to investigate the effect of polymer architecture on morphology and device performance. Moreover, the coverage area of the polyfluorene nanofibers on the BCP films was extracted from atomic force microscopy images, which can be correlated with the trapping density of the polymer electrets. The branched PDL segments not only improve stretchability but also tailor crystallinity and phase separation of the BCPs, thus increasing their charge-trapping ability. The OFET memory device with PF-b-PDL3 as the electret layer exhibited the largest memory window (102 V) and could retain its performance at up to 100% strain. This research highlights the importance of the BCP design for developing stretchable charge-trapping materials.
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Affiliation(s)
- Li-Che Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Saburo Kobayashi
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Dai-Hua Jiang
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Chih-Chien Hung
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Hui-Ching Hsieh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Kenji Tajima
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Wen-Chang Chen
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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