InP Quantum Dots: Synthesis and Lighting Applications

Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs

Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.

Rational Design of MIL-68(In) Derived Multiple Sulfides with Well Confined Quantum Dots and the Promoted Photocatalytic Hydrogen Generation

Quantum dots (QDs) of metal sulfides were proven to be excellent cocatalysts in visible-light-driven photocatalytic reactions. Metal organic frameworks (MOFs) possess a 3D porous channel that effectively confines small QDs and preserves their high catalytic activity by preventing their aggregation. In order to precisely construct the ternary metal sulfides of ZnS/ZnIn2S4/In2S3 with well-maintained Zn-AgInS2 (ZAIS) QDs, an in situ sulfurization combining a subsequent Zn(II)-exchange strategy was employed in this work. First, the ZAIS QDs were incorporated into MIL-68(In), which were then used as the precursors to precisely construct the ternary metal sulfides of ZnS/ZnIn2S4/In2S3 with well maintained ZAIS QDs through an in situ sulfurization combining subsequent Zn(II)-exchange strategy. When the optimized nanocomposites (QDs@M-t-Zn, where t is the sulfurization time) were applied in visible light-induced photocatalytic hydrogen generation, the resulting QDs@M-24h-Zn showed a significantly improved hydrogen evolution rate of 448.96 μmol g-1 h-1, which values are clearly higher than those of MIL-68(In), QDs@MIL-68(In), and M-24h-Zn without the presence of ZAIS QDs. To elucidate the increased photocatalytic mechanism, the optical patterns and the batch electrochemical investigations were combined. It has been discovered that the matching band potentials and the close contact heterojunction enhance interface charge transfer, which in turn encourages photocatalytic hydrogen production. This study demonstrates the well-thought-out design of the uniform confinement architecture inherited from MOF QD-assisted multinary metal sulfides photocatalysts.

Encapsulation of InP/ZnS Quantum Dots into MOF-5 Matrices for Solid-State Luminescence: Ship in the Bottle and Bottle around the Ship Methodologies

The utilization of InP-based quantum dots (QDs) as alternative luminescent nanoparticles to cadmium-based QDs is actively pursued. However, leveraging their luminescence for solid-state applications presents challenges due to the sensitivity of InP QDs to oxidation and aggregation-caused quenching. Hence, an appealing strategy is to protect and disperse InP QDs within hybrid materials. Metal-organic frameworks (MOFs) offer a promising solution as readily available crystalline porous materials. Among these, MOF-5 (composed of {Zn4O}6+ nodes and terephthalate struts) can be synthesized under mild conditions (at room temperature and basic pH), making it compatible with InP QDs. In the present work, luminescent InP/ZnS QDs are successfully incorporated within MOF-5 by two distinct methods. In the bottle around the ship (BAS) approach, the MOF was synthesized around the QDs. Alternatively, in the ship in the bottle (SIB) strategy, the QDs were embedded via capillarity into a specially engineered, more porous variant of MOF-5. Comparative analysis of the BAS and SIB approaches, evaluating factors such as operational simplicity, photoluminescence properties, and the resistance of the final materials to leaching were carried out. This comparative study provides insights into the efficacy of these strategies for the integration of InP/ZnS QDs within MOF-5 for potential solid-state applications in materials chemistry.

Magneto-optical nanosystems for tumor multimodal imaging and therapy in-vivo

Multimodal imaging, which combines the strengths of two or more imaging modalities to provide complementary anatomical and molecular information, has emerged as a robust technology for enhancing diagnostic sensitivity and accuracy, as well as improving treatment monitoring. Moreover, the application of multimodal imaging in guiding precision tumor treatment can prevent under- or over-treatment, thereby maximizing the benefits for tumor patients. In recent years, several intriguing magneto-optical nanosystems with both magnetic and optical properties have been developed, leading to significant breakthroughs in the field of multimodal imaging and image-guided tumor therapy. These advancements pave the way for precise tumor medicine. This review summarizes various types of magneto-optical nanosystems developed recently and describes their applications as probes for multimodal imaging and agents for image-guided therapeutic interventions. Finally, future research and development prospects of magneto-optical nanosystems are discussed along with an outlook on their further applications in the biomedical field.

Effect of the incorporation of gallium ions into silver indium sulfide nanocrystals

Gallium ion incorporation into silver indium gallium sulfide nanocrystals is investigated by various methods, including photoluminescence (PL) and X-ray photoelectron spectroscopy. The ZnS shell-growth enhances a PL quantum yield of up to 16%, with which the quantum dot light-emitting diode was successfully fabricated.

Inkjet printing of heavy-metal-free quantum dots-based devices: a review

Inkjet printing (IJP) has become a versatile, cost-effective technology for fabricating organic and hybrid electronic devices. Heavy-metal-based quantum dots (HM QDs) play a significant role in these inkjet-printed devices due to their excellent optoelectrical properties. Despite their utility, the intrinsic toxicity of HM QDs limits their applications in commercial products. To address this limitation, developing alternative HM-free quantum dots (HMF QDs) that have equivalent optoelectronic properties to HM QD is a promising approach to reduce toxicity and environmental impact. This article comprehensively reviews HMF QD-based devices fabricated using IJP methods. The discussion includes the basics of IJP technology, the formulation of printable HMF QD inks, and solutions to the coffee ring effect. Additionally, this review briefly explores the performance of typical state-of-the-art HMF QDs and cutting-edge characterization techniques for QD inks and printed QD films. The performance of printed devices based on HMF QDs is discussed and compared with those fabricated by other techniques. In the conclusion, the persisting challenges are identified, and perspectives on potential avenues for further progress in this rapidly developing research field are provided.

Research Progress of Heavy-Metal-Free Quantum Dot Light-Emitting Diodes

At present, heavy-metal-free quantum dot light-emitting diodes (QLEDs) have shown great potential as a research hotspot in the field of optoelectronic devices. This article reviews the research on heavy-metal-free quantum dot (QD) materials and light-emitting diode (LED) devices. In the first section, we discussed the hazards of heavy-metal-containing quantum dots (QDs), such as environmental pollution and human health risks. Next, the main representatives of heavy-metal-free QDs were introduced, such as InP, ZnE (E=S, Se and Te), CuInS2, Ag2S, and so on. In the next section, we discussed the synthesis methods of heavy-metal-free QDs, including the hot injection (HI) method, the heat up (HU) method, the cation exchange (CE) method, the successful ionic layer adsorption and reaction (SILAR) method, and so on. Finally, important progress in the development of heavy-metal-free QLEDs was summarized in three aspects (QD emitter layer, hole transport layer, and electron transport layer).

Metal-Solvent Complex Formation at the Surface of InP Colloidal Quantum Dots

The surface chemistry of colloidal semiconductor nanocrystals (QDs) profoundly influences their physical and chemical attributes. The insulating organic shell ensuring colloidal stability impedes charge transfer, thus limiting optoelectronic applications. Exchanging these ligands with shorter inorganic ones enhances charge mobility and stability, which is pivotal for using these materials as active layers for LEDs, photodetectors, and transistors. Among those, InP QDs also serve as a model for surface chemistry investigations. This study focuses on group III metal salts as inorganic ligands for InP QDs. We explored the ligand exchange mechanism when metal halide, nitrate, and perchlorate salts of group III (Al, In Ga), common Lewis acids, are used as ligands for the conductive inks. Moreover, we compared the exchange mechanism for two starting model systems: InP QDs capped with myristate and oleylamine as X- and L-type native organic ligands, respectively. We found that all metal halide, nitrate, and perchlorate salts dissolved in polar solvents (such as n-methylformamide, dimethylformamide, dimethyl sulfoxide, H2O) with various polarity formed metal-solvent complex cations [M(Solvent)6]3+ (e.g., [Al(MFA)6]3+, [Ga(MFA)6]3+, [In(MFA)6]3+), which passivated the surface of InP QDs after the removal of the initial organic ligand. All metal halide capped InP/[M(Solvent)6]3+ QDs show excellent colloidal stability in polar solvents with high dielectric constant even after 6 months in concentrations up to 74 mg/mL. Our findings demonstrate the dominance of dissociation-complexation mechanisms in polar solvents, ensuring colloidal stability. This comprehensive understanding of InP QD surface chemistry paves the way for exploring more complex QD systems such as InAs and InSb QDs.

Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications

Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.

Pseudohalogen Ammonium Salt-Assisted Syntheses of Large-Sized Indium Phosphide Quantum Dots with Near-Infrared Photoluminescence

The development of indium phosphide (InP)-based quantum dots (QDs) with a near-infrared (NIR) emission area still lags behind the visible wavelength region and remains problematic. This study describes a one-step in situ pseudohalogen ammonium salt-assisted approach to generate NIR-emitted InP-based QDs with high photoluminescence quantum yields (PLQYs). The coexistence of NH4+ and PF6- ions from NH4PF6 may in situ synchronously etch and passivate the surface oxides and impede the creation of traps under the whole growth process of InP QDs. Experimental findings demonstrated that the in situ pseudohalogen ammonium salt-assisted syntheses technique may feature emission at a full width at half-maximum (fwhm) peak as fine as ∼45 nm and broaden the emission range to around ∼780 nm. A two-step approach for ZnS shells was developed to further improve the PLQY of NIR-emitted InP QDs. Furthermore, the constructed high-power intrinsically stretchable NIR color-conversion film employing the InP-based QDs/polymer composites presented excellent luminescence conversion ability and stretchability.

Highly Sensitive, Stable InP Quantum Dot Fluorescent Probes for Quantitative Immunoassay Through Nanostructure Tailoring and Biotin-Streptavidin Coupling

Nontoxic, highly sensitive InP quantum dot (QD) fluorescent immunoassay probes are promising biomedical detection modalities due to their unique properties. However, InP-based QDs are prone to surface oxidation, and the stability of InP QD-based probes in biocompatible environments remains a crucial challenge. Although the thick shell can provide some protection during the phase transfer process of hydrophobic QDs, the photoluminescence quantum yield (PLQY) is generally decreased because of the contradiction between lattice stress relaxation and thick shell growth. Herein, we developed thick-shell InP-based core/shell QDs by inserting a ZnSeS alloy layer. The ternary ZnSeS intermediate shell could effectively facilitate lattice stress relaxation and passivate the defect states. The synthesized InP/ZnSe/ZnSeS/ZnS core/alloy shell/shell QDs (CAS-InP QDs) with nanostructure tailoring revealed a larger size, high PLQY (90%), and high optical stability. After amphiphilic polymer encapsulation, the aqueous CAS-InP QDs presented almost constant fluorescence attenuation and stable PL intensity under different temperatures, UV radiation, and pH solutions. The CAS-InP QDs were excellent labels of the fluorescence-linked immunosorbent assay (FLISA) for detecting C-reactive protein (CRP). The biotin-streptavidin (Bio-SA) system was first introduced in the FLISA to further improve the sensitivity, and the CAS-InP QDs-based SA-Bio sandwich FLISA realized the detection of CRP with an impressive limit of detection (LOD) of 0.83 ng/mL. It is believed that the stable and sensitive InP QD fluorescent probes will drive the rapid development of future eco-friendly, cost-effective, and sensitive in vitro diagnostic kits.

Impact of Surface Ligand on the Biocompatibility of InP/ZnS Quantum Dots with Platelets

InP/ZnS quantum dots (QDs) have received a large focus in recent years as a safer alternative to heavy metal-based QDs. Given their intrinsic fluorescent imaging capabilities, these QDs can be potentially relevant for in vivo platelet imaging. The InP/ZnS QDs are synthesized and their biocompatibility investigated through the use of different phase transfer agents. Analysis of platelet function indicates that platelet-QD interaction can occur at all concentrations and for all QD permutations tested. However, as the QD concentration increases, platelet aggregation is induced by QDs alone independent of natural platelet agonists. This study helps to define a range of concentrations and coatings (thioglycolic acid and penicillamine) that are biocompatible with platelet function. With this information, the platelet-QD interaction can be identified using multiple methods. Fluorescent lifetime imaging microscopy (FLIM) and confocal studies have shown QDs localize on the surface of the platelet toward the center while showing evidence of energy transfer within the QD population. It is believed that these findings are an important stepping point for the development of fluorescent probes for platelet imaging.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

Repercussions of the Inner Shell Layer on the Performance of Cd-Free Quantum Dots and Their Light-Emitting Diodes

Indium phosphide (InP) and zinc selenium tellurium (ZnSeTe) quantum dots (QDs) as less toxic alternatives have received substantial attention. The structure of QDs generally consists of a QD core, inner shell layer, and outer shell layer. We reckon that the inner shell layer, especially its components and thickness, have a significant influence on the optical and electronic performances of QDs. In this Perspective, we compare optical properties of these QDs with different inner shells and summarize how typical inner shell components and thickness influence their optical properties. The impact of the inner shell on the performance of QD light-emitting diodes (QLEDs) has also been discussed. The appropriate components and thickness of the inner shell both contribute to alleviate valence or lattice mismatch, thereby enhancing the performance of QDs. We expect that this Perspective could heighten awareness of the significance and impact of the inner shell layer in QDs and facilitate further development of QDs and QLEDs.

Enhanced Charge Transfer from Coinage Metal Doped InP Quantum Dots

This paper describes coinage-metal-doped InP quantum dots (QDs) as a platform for enhanced electron transfer to molecular acceptors relative to undoped QDs. A synthetic strategy is developed to prepare doped InP/ZnSe QDs. First-principles DFT calculations show that Ag+ and Cu+ dopants localize photoexcited holes while leaving electrons delocalized. This charge carrier wave function modulation is leveraged to enhance electron transfer to molecular acceptors by up to an order of magnitude. Examination of photoluminescence quenching data suggests that larger electron acceptors, such as anthraquinone and methyl viologen, bind to the QD surface in two ways: by direct adsorption to the surface and by adsorption following displacement of a weakly bound surface cation-ligand complex. Reactions with larger acceptors show the greatest increases in electron transfer between doped and undoped quantum dots, while smaller acceptors show smaller enhancements. Specifically, benzoquinone shows the smallest, followed by naphthoquinone and then methyl viologen and anthraquinone. These results demonstrate the benefits of dopant-induced excited-state carrier localization on photoinduced charge transfer and highlight design principles for improved implementation of quantum dots in photoredox catalysis.

Suppressed Auger recombination and enhanced emission of InP/ZnSe/ZnS quantum dots through inner shell manipulation

Understanding the influence of the inner shell on fluorescence blinking and exciton dynamics is essential to promote the optical performances of InP-based quantum dots (QDs). Here, the fluorescence blinking, exciton dynamics, second-order correlation function g2(τ), and ultrafast carrier dynamics of InP/ZnSe/ZnS QDs regulated by the inner ZnSe shell thickness varying from 2 to 7 monolayers (MLs) were systematically investigated. With an inner ZnSe shell thickness of 5 MLs, the photoluminescence quantum yield (PL QY) can reach 98% due to the suppressed blinking and increased probability of multiphoton emission. The exciton dynamics of InP/ZnSe/ZnS QDs with different inner shells indicates that two decay components of neural excitons and charged trions are competitive to affect the photon emission behavior. The probability density distributions of the ON and OFF state duration in the blinking traces demonstrate an effective manipulation of the inner ZnSe shell in the non-radiative processes via defect passivation. Accordingly, the radiative recombination dominates the exciton deactivation and the non-radiative Auger recombination rate is remarkably reduced, leading to a QY close to unity and a high PL stability for InP/ZnSe/ZnS QDs with 5 MLs of the ZnSe shell. These results provide insights into the photophysical mechanism of InP-based QDs and are significant for developing novel semiconductor PL core/shell QDs.

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.

Zero Thermal Quenching Phenomenon of Green Emitting Carbon Dots with High Biocompatibility and Stable Multicolor Biological Imaging in a Hot Environment

Carbon dots are emerging fluorescent nanomaterials with unique physical and chemical properties and a wide range of applications. Herein, we have designed and successfully synthesized thermally stable green emissive nitrogen-doped carbon dots (NCDs) with a photoluminescent quantum yield of 11.32% through facile solvent-free carbonization. NCDs demonstrated zero thermal quenching upon various temperatures modulating from 20 to 80 °C. The green emissive NCDs perform very stably even after heating them at 80 °C for 1 h. The thermal stability mechanism demonstrates that C═O and C═N functional groups control the particle aggregation and protect the fluorescent hub from photo-oxidation and thermal oxidation. Highly biocompatible CDs exhibit bright, stable, and multicolor emissions in T-ca cells under hot circumstances (25-45 °C). Additionally, NCDs offer long-term stability in the biosystem, as evidenced by the fact that the cell retains its brightness about 70% after prolonging the incubation time to 8 days. Furthermore, the fluorescent NCDs are utilized as in vivo imaging agents in the hot environment as they display bright and thermally stable imaging (27-45 °C) under 488 nm excitation. The results confirmed that the produced thermally stable NCDs could be used in biology and related medical fields that require hot environment imaging.

A Simple and Versatile Approach for the Low-Temperature Synthesis of Transition Metal Phosphide Nanoparticles from Metal Chloride Complexes and P(SiMe3 )3

Metal chloride complexes react with tris(trimethylsilyl)phosphine under mild condition to produce metal phosphide (TMP) nanoparticles (NPs), and chlorotrimethylsilane as a byproduct. The formation of Si-Cl bonds that are stronger than the starting M-Cl bonds acts as a driving force for the reaction. The potential of this strategy is illustrated through the preparation of ruthenium phosphide NPs using [RuCl2 (cymene)] and tris(trimethylsilyl)phosphine at 35 °C. Characterization with a combination of techniques including electron microscopy (EM), X-ray absorption spectroscopy (XAS), and solid-state nuclear magnetic resonance (NMR) spectroscopy, evidences the formation of small (diameter of 1.3 nm) and amorphous NPs with an overall Ru50 P50 composition. Interestingly, these NPs can be easily immobilized on functional support materials, which is of great interest for potential applications in catalysis and electrocatalysis. Mo50 P50 and Co50 P50 NPs can also be synthesized following the same strategy. This approach is simple and versatile and paves the way toward the preparation of a wide range of transition metal phosphide nanoparticles under mild reaction conditions.

Highly stable and pure single-photon emission with 250 ps optical coherence times in InP colloidal quantum dots

Quantum photonic technologies such as quantum communication, sensing or computation require efficient, stable and pure single-photon sources. Epitaxial quantum dots (QDs) have been made capable of on-demand photon generation with high purity, indistinguishability and brightness, although they require precise fabrication and face challenges in scalability. By contrast, colloidal QDs are batch synthesized in solution but typically have broader linewidths, low single-photon purities and unstable emission. Here we demonstrate spectrally stable, pure and narrow-linewidth single-photon emission from InP/ZnSe/ZnS colloidal QDs. Using photon correlation Fourier spectroscopy, we observe single-dot linewidths as narrow as ~5 µeV at 4 K, giving a lower-bounded optical coherence time, T2, of ~250 ps. These dots exhibit minimal spectral diffusion on timescales of microseconds to minutes, and narrow linewidths are maintained on timescales up to 50 ms, orders of magnitude longer than other colloidal systems. Moreover, these InP/ZnSe/ZnS dots have single-photon purities g(2)(τ = 0) of 0.077-0.086 in the absence of spectral filtering. This work demonstrates the potential of heavy-metal-free InP-based QDs as spectrally stable sources of single photons.

Dye-induced photoluminescence quenching of quantum dots: role of excited state lifetime and confinement of charge carriers

We investigate the role of quantum confinement and photoluminescence (PL) lifetime of photoexcited charge carriers in semiconductor core/shell quantum dots (QDs) via PL quenching due to surface modification. Surface modification is controlled by varying the number of dye molecules adsorbed onto the QD shell surface forming QD-dye nanoassemblies. We selected CuInS₂/ZnS (CIS) and InP/ZnS (InP) core/shell QDs exhibiting relatively weak (664 meV) and strong (1194 meV) confinement potentials for the conduction band electron. Moreover, the difference in the emission mechanism gives rise to a long and short excited state lifetime of CIS (ca. 290 ns) and InP (ca. 37 ns) QDs. Dye molecules of different ionic characters (rhodamine 575: zwitterionic and rhodamine 560: cationic) are used as quenchers. A detailed analysis of Stern-Volmer data shows that (i) quenching is generally more pronounced in CIS-dye assemblies as compared to InP-dye assemblies, (ii) dynamic quenching is dominating in all QD-dye assemblies with only a minor contribution from static quenching and (iii) the cationic dye shows a stronger interaction with the QD shell surface than the zwitterionic dye. Observations (i) and (ii) can be explained by the differences in the amplitude of the electronic component of the exciton wavefunction near the dye binding sites in both QDs, which results in the breaking up of the electron-hole pair and favors charge trapping. Observation (iii) can be attributed to the variations in electrostatic interactions between the negatively charged QD shell surface and the cationic and zwitterionic dyes, with the former exhibiting a stronger interaction. Moreover, the long lifetime of CIS QDs facilitates us to easily probe different time scales of the trapping processes and thus differentiate the origins of static and dynamic quenching components that appear in the Stern-Volmer analysis.

InP quantum dots: Stoichiometry regulates carrier dynamics

The optical properties of non-toxic indium phosphide (InP) quantum dots (QDs) are impinged by the existence of characteristic deep trap states. Several surface engineering strategies have been adopted to improve their optical quality, which has promoted the use of InP QDs for various technological applications. An antithetical approach involves the effective utilization of the deep trap states in InP QDs to modulate back electron transfer rates. Here, we explore the influence of the core-size of InP on their In-to-P stoichiometry and charge transfer dynamics when bound to an acceptor molecule, decyl viologen (DV2+). The mechanism of interaction of InP and DV2+ based on the quenching sphere model established the presence of (i) a 1:1 complex of DV2+ bound on InP and (ii) immobile quenchers in the quenching sphere, depending on the concentration of DV2+. While the forward electron transfer rates from photoexcited InP to bound DV2+ does not substantially vary with an increase in core size, the back electron transfer rates are found to be retarded. Findings from inductively coupled plasma-optical emission spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS) reveal that the In to P ratio is higher for QDs with larger core size, which further brings about increased carrier trapping and a decreased rate of charge recombination. Furthermore, long-lived charge-separated states in DV2+ bound to InP, extending to hundreds of milliseconds, are obtained by varying the number of DV2+ in the quenching sphere of the QDs.

Optimized immobilization of single chain variable fragment antibody onto non-toxic fluorescent nanoparticles for efficient preparation of a bioprobe

Single-chain variable fragment antibody (scFv) is a small molecular weight antibody that can be used for both therapeutic and diagnostic purposes. To visualize the interaction with the target biomolecules, scFv must be labeled with fluorescent molecules. In this study, to achieve the efficient labeling of scFv, we developed scFv-fluorescent nanoparticle conjugates to utilize scFv as bioprobes. As fluorescent carriers, cadmium-free ZnS-AgInS2/ZnS core/shell nanoparticles were used, and scFv was immobilized onto the nanoparticles via the interaction of nickel ions on nitrilotriacetic acid and hexahistidine (His-tag) fused with scFv. UV-Vis, fluorescence spectra, NMR, and dynamic laser scattering were used to characterize the scFv immobilized fluorescent nanoparticles (scFv-FNPs). The amounts of scFv on FNPs were controlled by the concentration of scFv. The scFv-FNPs that were prepared were non-toxic and selectively bound to cancer cells. The scFv-FNPs could be used as bioanalytical tools, and the immobilization method described here is a promising method for labeling biomolecules with the His-tag.

Encapsulation of Cadmium-Free InP/ZnSe/ZnS Quantum Dots in Poly(LMA-co-EGDMA) Microparticles via Co-flow Droplet Microfluidics

Quantum dots (QDs) are semiconductor nanocrystals that are used in optoelectronic applications. Most modern QDs are based on toxic metals, for example Cd, and do not comply with the European Restriction of Hazardous Substances regulation of the European Union. Latest promising developments focus on safer QD alternatives based on elements from the III-V group. However, the InP-based QDs lack an overall photostability under environmental influences. One design path of achieving stability is through encapsulation in cross-linked polymer matrices with the possibility to covalently link the matrix to surface ligands of modified core-shell QDs. The work focuses on the formation of polymer microbeads suitable for InP-based QD encapsulation, allowing for an individual protection of QDs and an improved processibility via this particle-based approach. For this, a microfluidic based method in the co-flow regime is used that consists of an oil-in-water droplet system in a glass capillary environment. The generated monomer droplets are polymerized in-flow into poly(LMA-co-EGDMA) microparticles with embedded InP/ZnSe/ZnS QDs using a UV initiation. They demonstrate how a successful polymer microparticle formation via droplet microfluidics produces optimized matrix structures leading to a distinct photostability improvement of InP-based QDs compared to nonprotected QDs.

InP/ZnS quantum dot photoluminescence modulation via in situ H2S interface engineering

InP quantum dots (QDs) are attracting significant interest as a potentially less toxic alternative to Cd-based QDs in many research areas. Although InP-based core/shell QDs with excellent photoluminescence properties have been reported so far, sophisticated interface treatment to eliminate defects is often necessary. Herein, using aminophosphine as a seeding source of phosphorus, we find that H₂S can be efficiently generated from the reaction between a thiol and an alkylamine at high temperatures. Apart from general comprehension that H₂S acts as a S precursor, it is revealed that with core etching by H₂S, the interface between InP and ZnS can be reconstructed with S^2- incorporation. Such a transition layer can reduce inherent defects at the interface, resulting in significant photoluminescence (PL) enhancement. Meanwhile, the size of the InP core could be further controlled by H₂S etching, which offers a feasible process to obtain wide band gap InP-based QDs with blue emission.

Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications

Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.

Transition Metal Phosphide Nanoarchitectonics for Versatile Organic Catalysis

Transition metal phosphides (TMP) posses unique physiochemical, geometrical, and electronic properties, which can be exploited for different catalytic applications, such as photocatalysis, electrocatalysis, organic catalysis, etc. Among others, the use of TMP for organic catalysis is less explored and still facing many complex challenges, which necessitate the development of sustainable catalytic reaction protocols demonstrating high selectivity and yield of the desired molecules of high significance. In this regard, the controlled synthesis of TMP-based catalysts and thorough investigations of underlying reaction mechanisms can provide deeper insights toward practical achievement of desired applications. This review aims at providing a comprehensive analysis on the recent advancements in the synthetic strategies for the tailored and tunable engineering of structural, geometrical, and electronic properties of TMP. In addition, their unprecedented catalytic potential toward different organic transformation reactions is succinctly summarized and critically analyzed. Finally, a rational perspective on future opportunities and challenges in the emerging field of organic catalysis is provided. On the account of the recent achievements accomplished in organic synthesis using TMP, it is highly anticipated that the use of TMP combined with advanced innovative technologies and methodologies can pave the way toward large scale realization of organic catalysis.

Multimodal-Responsive Circularly Polarized Luminescence Security Materials

Nations, industries, and aspects of everyday life have undergone forgery and counterfeiting ever since the emergence of commercialization. Securing documents and products with anticounterfeit additives shows promise for authentication, allowing one to combat ever-increasing global counterfeiting. One most-used effective encryption strategy is to combine with optical-security markers on the required protection objects; however, state-of-the-art labels still suffer from imitation due to their poor complexity and easy forecasting, as a result of deterministic production. Developing advanced anticounterfeiting tags with unusual optical characters and further incorporating complex security features are desired to achieve multimodal, unbreakable authentication capacity; unfortunately, this has not yet been achieved. Here, we prepare a series of stable circularly polarized luminescence (CPL) materials, composed of toxicity-free, high-quality-emitting inorganic quantum dots (QDs) and liquid crystals, using a designed helical-coassembly strategy. This CPL system achieves a figure of merit (FM, assessing the performance of both luminescence dissymmetry and quantum yield) value of 0.39, fulfilling practical demands for anticounterfeiting applications. Based on these CPL structures, we produce a type of multimodal-responsive security materials (MRSMs) that exhibits six different stimuli-responsive modes, including light activation, polarization, temperature, voltage, pressure, and view angle. Thus, we show a proof-of-principle blockchain-like integrated anticounterfeiting system, allowing multimodal-responsive, interactive/changeable information encryption-decryption. We further encapsulate the obtained security materials into a fiber to expand our materials to work on flexible fabrics, that is, building an intelligent textile with a color-adaptable function along with environmental change.

Deep Blue and Highly Emissive ZnS-Passivated InP QDs: Facile Synthesis, Characterization, and Deciphering of Their Ultrafast-to-Slow Photodynamics

InP-based quantum dots (QDs) are an environment-friendly alternative to their heavy metal-ion-based counterparts. Herein we report a simple procedure for synthesizing blue emissive InP QDs using oleic acid and oleylamine as surface ligands, yielding ultrasmall QDs with average sizes of 1.74 and 1.81 nm, respectively. Consecutive thin coating with ZnS increased the size of these QDs to 4.11 and 4.15 nm, respectively, alongside a significant enhancement of their emission intensities centered at ∼410 nm and ∼430 nm, respectively. Pure phase synthesis of these deep-blue emissive QDs is confirmed by powder X-ray diffraction (PXRD), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Armed with femtosecond to millisecond time-resolved spectroscopic techniques, we decipher the energy pathways, reflecting the effect of successive ZnS passivation on the charge carrier (electrons and holes) dynamics in the deep-blue emissive InP, InP/ZnS, and InP/ZnS/ZnS QDs. Successive coating of the InP QDs increases the intraband relaxation times from 200 to 700 fs and the lifetime of the hot electrons from 2 to 8 ps. The lifetime of the cold holes also increase from 1 to 4 ps, and remarkably, the Auger recombination escalates from 15 to 165 ps. The coating also drastically decreases the quenching by the molecular oxygen of the trapped charge carriers at the surfaces of the QDs. Our results provide clues to push further the emission of InP QDs into more energetically spectral regions and to increase the fluorescence quantum yield, targeting the construction of efficient UV-emissive light-emitting devices (LEDs).

Heteroepitaxial chemistry of zinc chalcogenides on InP nanocrystals for defect-free interfaces with atomic uniformity

Heteroepitaxy on colloidal semiconductor nanocrystals is an essential strategy for manipulating their optoelectronic functionalities. However, their practical synthesis typically leads to scattered and unexpected outcomes due to the intervention of multiple reaction pathways associated with complicated side products of reactants. Here, the heteroepitaxy mechanism of zinc chalcogenide initiated on indium phosphide (InP) colloidal nanocrystals is elucidated using the precursors, zinc carboxylate and trialkylphosphine selenide. The high magnetic receptivity of ⁷⁷Se and the characteristic longitudinal optical phonon mode of ZnSe allowed for monitoring the sequence of epilayer formation at the molecular level. The investigation revealed the sterically hindered acyloxytrialkylphosphonium and diacyloxytrialkylphosphorane to be main intermediates in the surface reaction, which retards the metal ion adsorption by a large steric hindrance. The transformation of adsorbates to the crystalline epilayer was disturbed by surface oxides. Raman scattering disclosed the pathway of secondary surface oxidation triggered by carboxylate ligands migrated from zinc carboxylate. The surface-initiated heteroepitaxy protocol is proposed to fabricate core/shell heterostructured nanocrystals with atomic-scale uniformity of epilayers. Despite the large lattice mismatch of ZnS to InP, we realised a uniform and interface defect-free ZnS epilayer (~0.3 nm thickness) on InP nanocrystals, as evidenced by a high photoluminescence quantum yield of 97.3%.

Narrow-Bandwidth Blue-Emitting Ag-Ga-Zn-S Semiconductor Nanocrystals for Quantum-Dot Light-Emitting Diodes

I-III-VI type semiconductor nanocrystals (NCs) have attracted considerable attention in the display field. Herein, we realized the synthesis of narrow-bandwidth blue-emitting Ag-Ga-Zn-S (AGZS) NCs via a facile one-pot method. Intriguingly, the Ag/Zn feeding ratio and Ag/Ga feeding ratio are crucial for the realization of narrow-bandwidth AGZS NCs. By choosing a Ag/Zn feeding ratio of 4:1 and Ag/Ga feeding ratio of 1:8, AGZS NCs demonstrate a typical blue emission at 470 nm with a narrow full width at half-maximum (fwhm) of 48 nm, which is mainly generated from the band-to-hole recombination rather than the donor-acceptor pair (DAP) recombination. Furthermore, a solution-processed quantum-dot light-emitting device based on AGZS NCs exhibits a narrow electroluminescent bandwidth of 53 nm and high luminance over 123.1 cd m^-2, as well as a high external quantum efficiency (EQE) of 0.40%. Our work highlights AGZS NCs with high color purity as an important candidate for blue-light-emitting devices.

Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials

Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for numerous photonic, optoelectronic and biomedical applications owing to their low-cost solution-processability and tunable emission. Among them, lead- and mercury-based QDs are currently the most developed materials. Yet, due to toxicity issues, the scientific community is focusing on safer alternatives. In this regard, indium arsenide (InAs) QDs are one of the best candidates as they can absorb and emit light in the whole near infrared spectral range and they are RoHS-compliant, with recent trends suggesting that there is a renewed interest in this class of materials. This review focuses on colloidal InAs QDs and aims to provide an up-to-date overview spanning from their synthesis and surface chemistry to post-synthesis modifications. We provide a comprehensive overview from initial synthetic methods to the most recent developments on the ability to control the size, size distribution, electronic properties and carrier dynamics. Then, we describe doping and alloying strategies applied to InAs QDs as well as InAs based heterostructures. Furthermore, we present the state-of-the-art applications of InAs QDs, with a particular focus on bioimaging and field effect transistors. Finally, we discuss open challenges and future perspectives.

Effective Blue Light-Absorbing AuAg Nanoparticles in InP Quantum Dots-Based Color Conversion

In typical color-by-blue mode-based quantum dot (QD) display devices, only part of the blue excitation light is absorbed by QD emitters, thus it is accompanied by the leakage of blue light through the devices. To address this issue, we offer, for the first time, the applicability of AuAg alloy nanoparticles (NPs) as effective blue light absorbers in InP QD-based color-by-blue platforms. For this, high-quality fluorescent green and red InP QDs with a double shell scheme of ZnSe/ZnS were synthesized and embedded in a transparent polymer film. Separately, a series of Au/Ag ratio-varied AuAg NPs with tunable plasmonic absorption peaks were synthesized. Among them, AuAg NPs possessing the most appropriate absorption peak with respect to spectral overlap with blue emission are chosen for the subsequent preparation of AuAg NP polymeric films with varied NP concentrations. A stack of AuAg NP polymeric film on top of InP QD film is then placed remotely on a blue light-emitting diode, successfully resulting in systematically progressive suppression of blue light leakage with increasing AuAg NP concentration. Furthermore, the beneficial function of the AuAg NP polymeric overlayer in mitigating undesirable QD excitation upon exposure to ambient lights was further examined.

Ultrafast Charge Carrier Dynamics in InP/ZnSe/ZnS Core/Shell/Shell Quantum Dots

The excellent performance of InP/ZnSe/ZnS core/shell/shell quantum dots (CSS-QDs) in light-emitting diodes benefits from the introduction of a ZnSe midshell. Understanding the changes of ultrafast carrier dynamics caused by the ZnSe midshell is important for their optoelectronic applications. Herein, we have compared the ultrafast carrier dynamics in CSS-QDs and InP/ZnS core/shell QDs (CS-QDs) using femtosecond transient absorption spectroscopy. The results show that the ZnSe midshell intensifies the electron delocalization and prolongs the in-band relaxation time of electrons from 238 fs to 350 fs, and that of holes from hundreds of femtoseconds to 1.6 ps. We also found that the trapping time caused by deep defects increased from 25.6 ps to 76 ps, and there were significantly reduced defect emissions in CSS-QDs. Moreover, the ZnSe midshell leads to a significantly increased density of higher-energy hole states above the valence band-edge, which may reduce the probability of Auger recombination caused by the positive trion. This work enhances our understanding of the excellent performance of the CSS-QDs applied to light-emitting diodes, and is likely to be helpful for the further optimization and design of optoelectronic devices based on the CSS-QDs.

Physico-Chemical Transformation and Toxicity of Multi-Shell InP Quantum Dots under Simulated Sunlight Irradiation, in an Environmentally Realistic Scenario

Quantum dots (QDs) are widely used in optoelectronics, lighting, and photovoltaics leading to their potential release into the environment. The most promising alternative to the highly toxic cadmium selenide (CdSe) QDs are indium phosphide (InP) QDs, which show reduced toxicity and comparable optical and electronic properties. QD degradation leads to the release of toxic metal ions into the environment. Coating the QD core with robust shell(s) composed of another semi-conductor material enhances their properties and protects the QD from degradation. We recently developed double-shelled InP QDs, which proved to be less toxic than single-shell QDs. In the present study, we confirm their reduced cytotoxicity, with an LC50 at 77 nM for pristine gradient shell QDs and >100 nM for pristine thin and thick shell QDs. We also confirm that these three QDs, when exposed to simulated sunlight, show greater cytotoxicity compared to pristine ones, with LC50 ranging from 15 to 23 nM. Using a combination of spectroscopic and microscopic techniques, we characterize the degradation kinetics and transformation products of single- and double-shell QDs, when exposed to solar light at high temperature, simulating environmental conditions. Non-toxic pristine QDs degrade to form toxic In−phosphate, In−carboxylate, Zn−phosphate, and oxidized Se, all of which precipitate as heterogeneous deposits. Comparison of their degradation kinetics highlights that the QDs bearing the thickest ZnS outer shell are, as expected, the most resistant to photodegradation among the three tested QDs, as gradient shell, thin shell, and thick shell QDs lose their optical properties in less than 15 min, 60 min, and more than 90 min, respectively. They exhibit the highest photoluminescence efficiency, i.e., the best functionality, with a photoluminescence quantum yield in aqueous solution of 24%, as compared to 18% for the gradient shell and thin shell QDs. Therefore, they can be considered as safer-by-design QDs.

Highly Bright Silica-Coated InP/ZnS Quantum Dot-Embedded Silica Nanoparticles as Biocompatible Nanoprobes

Quantum dots (QDs) have outstanding optical properties such as strong fluorescence, excellent photostability, broad absorption spectra, and narrow emission bands, which make them useful for bioimaging. However, cadmium (Cd)-based QDs, which have been widely studied, have potential toxicity problems. Cd-free QDs have also been studied, but their weak photoluminescence (PL) intensity makes their practical use in bioimaging challenging. In this study, Cd-free QD nanoprobes for bioimaging were fabricated by densely embedding multiple indium phosphide/zinc sulfide (InP/ZnS) QDs onto silica templates and coating them with a silica shell. The fabricated silica-coated InP/ZnS QD-embedded silica nanoparticles (SiO₂@InP QDs@SiO₂ NPs) exhibited hydrophilic properties because of the surface silica shell. The quantum yield (QY), maximum emission peak wavelength, and full-width half-maximum (FWHM) of the final fabricated SiO₂@InP QDs@SiO₂ NPs were 6.61%, 527.01 nm, and 44.62 nm, respectively. Moreover, the brightness of the particles could be easily controlled by adjusting the amount of InP/ZnS QDs in the SiO₂@InP QDs@SiO₂ NPs. When SiO₂@InP QDs@SiO₂ NPs were administered to tumor syngeneic mice, the fluorescence signal was prominently detected in the tumor because of the preferential distribution of the SiO₂@InP QDs@SiO₂ NPs, demonstrating their applicability in bioimaging with NPs. Thus, SiO₂@InP QDs@SiO₂ NPs have the potential to successfully replace Cd-based QDs as highly bright and biocompatible fluorescent nanoprobes.

Green InP-based quantum dots and electroluminescent light-emitting diodes

With the advancement toward commercialization of quantum dots (QDs) in the field of lighting and display, improving the performance of Cd-free QDs and related quantum dot light-emitting diodes (QLEDs) becomes necessary. Thus far, the performance of ZnTeSe- and InP-based blue and red QLEDs has been significantly improved by optimizing QDs emitting materials and device structure. However, as one of the three primary color sources, the performance of green InP-based QLEDs still lags behind that of blue and red Cd-free QLEDs. Herein, this review discusses the latest progress of green InP-based emitting materials and corresponding QLEDs, covering the engineering of InP core, the optimization of nanostructure and surface ligands of core/shell QDs, as well as the majorization of device architecture and carrier transport materials. Finally, some challenges and possible development directions of green InP-based QDs and related QLEDs are also identified, which may speed up the commercialization process of Cd-free QDs and corresponding QLEDs.

Anisotropic and hyperbranched InP nanocrystals via chemical transformation of in situ produced In2O3

We synthesized indium phosphide (InP) nanoparticles of different shapes and sizes, utilizing triphenyl phosphite (TPOP) as the phosphorus source. We show that this reaction proceeds via the formation of in situ formed In₂O₃ nanoparticles followed by subsequent transformation with triphenyl TPOP acting as the phosphorus source. Our findings open up new synthetic possibilities utilizing a cost-effective, non-pyrophoric and non-toxic phosphorus precursor. The large surface area of hyperbranched InP NCs might be ideally suited for surface-driven processes such as catalysis and energy storage.

Progress of Backlight Devices: Emergence of Halide Perovskite Quantum Dots/Nanomaterials

The technology behind the display is becoming ever more prevalent in our daily lives. It has many applications, including smartphones, tablets, desktop monitors, TVs, and augmented reality/virtual reality devices. The display technology has progressed drastically over the past decade, from the bulky cathode ray tube to the flat panel displays. In the flat panel displays, the liquid crystal display (LCD) and organic light-emitting diodes (OLEDs) are the two dominant technologies. Nevertheless, due to low stability and color tunability, OLEDs remain behind the LCDs. The LCD screen has a backlight, usually a white LED, which comprises a blue LED covered with a red and green enhanced layer (color-converting layers). Although InP/CdSe QDs attracted more attention due to their solution processability and better color gamut than the previous technologies, the complexity of their synthesis was still an obstacle to their commercialization. Later, the emergence of perovskite with highly intense and tunable PL emission, high color purity, and low-cost synthesis route attracted the attention of display researchers. Owing to the relatively higher performance of perovskite quantum dots (PQDs) than that of bulk (3D) perovskite in backlit display devices, these PQDs are being used for high color contrast and bright display devices. Furthermore, the color gamut for PQDs was observed as 140% of the NTSC standard, that is, close to that of the commercial OLED devices. In this review, we have discussed the progress of display technologies with a clear classification of the pros and cons of each technology. Also, the application of perovskite QD/nanomaterials in LCD backlit devices has been discussed, and the future direction of further improvement in their stability and performance has been listed.

Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

InP-based quantum dot light-emitting diodes (QLEDs), as less toxic than Cd-free and Pb-free optoelectronic devices, have become the most promising benign alternatives for the next generation lighting and display. However, the development of green-emitting InP-based QLEDs still remains a great challenge to the environmental preparation of InP quantum dots (QDs) and superior device performance. Herein, we reported the highly efficient green-emitting InP-based QLEDs regulated by the inner alloyed shell components. Based on the environmental phosphorus tris(dimethylamino)phosphine ((DMA)₃P), we obtained highly efficient InP-based QDs with the narrowest full width at half maximum (~35 nm) and highest quantum yield (~97%) by inserting the gradient inner shell layer ZnSe_xS_1-x without further post-treatment. More importantly, we concretely discussed the effect and physical mechanism of ZnSe_xS_1-x layer on the performance of QDs and QLEDs through the characterization of structure, luminescence, femtosecond transient absorption, and ultraviolet photoelectron spectroscopy. We demonstrated that the insert inner alloyed shell ZnSe_xS_1-x provided bifunctionality, which diminished the interface defects upon balancing the lattice mismatch and tailored the energy levels of InP-based QDs which could promote the balanced carrier injection. The resulting QLEDs applying the InP/ZnSe_0.7S_0.3/ZnS QDs as an emitter layer exhibited a maximum external quantum efficiency of 15.2% with the electroluminescence peak of 532 nm, which was almost the highest record of InP-based pure green-emitting QLEDs. These results demonstrated the applicability and processability of inner shell component engineering in the preparation of high-quality InP-based QLEDs.

Reversible Zn2+-induced 3D self-assembled aerogel of carboxyl modified copper indium diselenide quantum dots: mechanism and application for inkjet printing anti-counterfeiting

Three-dimensional (3D) self-assembled quantum dot (QD) aerogels have attracted attention due to the combined properties of both QDs and porous materials. However, the difficulty and complexity of structural composition control limit the practical application of 3D self-assembled QDs. Hence, convenient, available and multifunction QD aerogels need to be explored to promote broader practical applications. Herein, we propose a universal and facile self-assembly method of copper indium selenium (CISe) QD aerogels based on coordination interaction between Zn²⁺ and carboxyl. Both experiments and Monte Carlo simulations indicate that QDs are aggregated into oligomers by Zn²⁺, and then the oligomers are gradually interconnected to each other to form a 3D network as the concentration of Zn²⁺ increases. Moreover, Zn²⁺-induced 3D self-assembled aerogel could be depolymerized by EDTA reversibly. In combination with CISe QDs, Zn-CISe aerogel has been successfully applied in green pollution-free environment-friendly anti-counterfeiting and encryption systems.

Intelligent multicolor nano-sensor based on nontoxic dual fluoroprobe and MOFs for colorful consecutive detection of Hg2+ and cysteine

Ultrasensitive detection of Hg²⁺ in aquatic ecosystems is of great significance due to its high toxicity and ubiquity in water. Herein, using a one-step in-situ synthesis method, blue fluorescent carbon dots (CDs), red fluorescent InP/ZnS quantum dots (InPQDs), and MOFs (ZIF-8) integrated multicolor nano-sensor CDs/InPQDs@ZIF-8 was constructed for consecutive visual detection of Hg²⁺ and Cys. The InPQDs can act as the response unit for Hg²⁺ and Cys, with the limit of detection (LOD) of 8.68 and 37.96 nM, respectively. Significantly, the low detection limit combines with good specificity and accuracy of the nano-sensor meet the requirement for the safety monitoring and control of Hg²⁺ in drinking and environmental water. Moreover, the color recognition and processing software installed on smart phone can realize the real-time and rapid sensing of Hg²⁺ and Cys. A logic gate circuit was also devised, providing the possibilities for the application of the nano-sensor in the field of intelligent devices. As far as we know, this was the first example to apply InPQDs to the continuous multicolor visual detection of Hg²⁺ and Cys, which provided reference for the construction of environmentally-friendly dual emission fluorescent sensors for hazardous substance monitoring.

Enhanced Luminous Efficacy and Stability of InP/ZnSeS/ZnS Quantum Dot-Embedded SBA-15 Mesoporous Particles for White Light-Emitting Diodes

Environmentally friendly quantum dots (QDs) of InP-based materials are widely investigated, but their reliability remains inadequate to realize their full potential and wide application. In this study, InP/ZnSeS/ZnS QDs (pristine QDs) were dispersed and embedded into Santa Barbara Amorphous-15 mesoporous particles (SBA-15 MPs) for the first time. A solvent-free method for preparing QD white light-emitting diodes (WLEDs) that is compatible with the WLED packaging process was developed. The photoluminescence (PL) spectrum of pristine QD powder exhibited cluster states and had huge redshift of approximately 23 nm. By comparison, the PL spectrum of the SBA-15 MP/QD hybrid powder had a slight redshift of approximately 8 nm, only because the pristine QDs were dispersed and embedded well in the SBA-15 MPs. The PL intensity of the SBA-15 MP/QD hybrid powder slightly decreased after heating and cooling compared with that of the pristine QDs. Moreover, the luminous efficacy of the SBA-15 MP/QD hybrid WLEDs was enhanced by approximately 14% compared with that of the pristine QD-WLEDs. Furthermore, reliability analysis revealed that the SBA-15 MPs could improve the stability of the pristine QDs on chips. Thus, these MPs promise good potential for applications in mini-LEDs in the future.

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

Light-emitting diodes based on colloidal quantum dots (QLEDs) show a good prospect in commercial application due to their narrow spectral linewidths, wide color range, excellent luminance efficiency, and long operating lifetime. However, the toxicity of heavy-metal elements, such as Cd-based QLEDs or Pb-based perovskite QLEDs, with excellent performance, will inevitably pose a serious threat to people’s health and the environment. Among heavy-metal-free materials, InP quantum dots (QDs) have been paid special attention, because of their wide emission, which can, in principle, be tuned throughout the whole visible and near-infrared range by changing their size, and InP QDs are generally regarded as one of the most promising materials for heavy-metal-free QLEDs for the next generation displays and solid-state lighting. In this review, the great progress of QLEDs, based on the fundamental structure and photophysical properties of InP QDs, is illustrated systematically. In addition, the remarkable achievements of QLEDs, based on their modification of materials, such as ligands exchange of InP QDs, and the optimization of the charge transport layer, are summarized. Finally, an outlook is shown about the challenge faced by QLED, as well as possible pathway to enhancing the device performance. This review provides an overview of the recent developments of InP QLED applications and outlines the challenges for achieving the high-performance devices.

Suppressing the Cation Exchange at the Core/Shell Interface of InP Quantum Dots by a Selenium Shielding Layer Enables Efficient Green Light-Emitting Diodes

Indium phosphide (InP) quantum dots (QDs) have demonstrated great potential for light-emitting diode (LED) application because of their excellent optical properties and nontoxicity. However, the over performance of InP QDs still lags behind that of CdSe QDs, and one of main reasons is that the Zn traps in InP lattices can be formed through the cation exchange in the ZnSe shell growth process. Herein, we realized highly luminescent InP/ZnSe/ZnS QDs by constructing Se-rich shielding layers on the surfaces of InP cores, which simultaneously protect the InP cores from the invasion of Zn²⁺ into InP lattices and facilitate the ZnSe shell growth via the reaction between Zn²⁺ precursors and Se^2- shielding layers. The as-synthesized green InP/ZnSe/ZnS QDs had a high photoluminescence quantum yield (PLQY) of up to 87%. The fabricated QLEDs present a peak external quantum efficiency of 6.2% with an improved efficiency roll-off at high luminance, which is 2 times higher than that of control devices.