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Yu H, Wang Y, Zeng H, Cao Z, Zhang Q, Gao L, Hong M, Wei X, Zheng Y, Zhang Z, Zhang X, Zhang Y. High-Spike Barrier Photodiodes Based on 2D Te/WS 2 Heterostructures. ACS NANO 2024. [PMID: 38902201 DOI: 10.1021/acsnano.4c03729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
Two-dimensional (2D) van der Waals (vdWs) heterojunctions have been actively investigated in low-power-consumption and fast-response photodiodes owing to their atomically smooth interfaces and ultrafast interfacial charge transfer. However, achieving ultralow dark current and ultrafast photoresponse in the reported photovoltaic devices remains a challenge as the large built-in electric field in a heterojunction can not only speed up photocarrier transport but also increase the minority-carrier dark current. Here, we propose a high-spike barrier photodiode that can achieve both an ultralow dark current and an ultrafast response. The device is fabricated by the Te/WS2 heterojunction, while the band alignment can transition from type-II to type-I with a high electron barrier and a large hole built-in electronic field. The high electron barrier can greatly reduce the drift current of minority carriers and the generation current of the thermal carriers, while the large built-in electronic field can still speed up the photocarrier transport. The designed Te/WS2 vdWs photodiode yields an ultralow dark current of 8 × 10-14 A and an ultrafast photoresponse of 10/13 μs. Furthermore, a high-performance visible-light imager with a pixel resolution of 100 × 40 is demonstrated using the Te/WS2 vdWs photodiode. This work provides a comprehensive understanding of designing 2D-material-based photovoltaics with excellent overall performance.
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Affiliation(s)
- Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Yunan Wang
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Haoran Zeng
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Zhihong Cao
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences (CAS) Beijing 100190, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Xiaofu Wei
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Yue Zheng
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, P. R. China
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Khan K, Tareen AK, Ahmad W, Hussain I, Chaudhry MU, Mahmood A, Khan MF, Zhang H, Xie Z. Recent Advances in Non-Ti MXenes: Synthesis, Properties, and Novel Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2303998. [PMID: 38894594 DOI: 10.1002/advs.202303998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Revised: 09/10/2023] [Indexed: 06/21/2024]
Abstract
One of the most fascinating 2D nanomaterials (NMs) ever found is various members of MXene family. Among them, the titanium-based MXenes, with more than 70% of publication-related investigations, are comparatively well studied, producing fundamental foundation for the 2D MXene family members with flexible properties, familiar with a variety of advanced novel technological applications. Nonetheless, there are still more candidates among transitional metals (TMs) that can function as MXene NMs in ways that go well beyond those that are now recognized. Systematized details of the preparations, characteristics, limitations, significant discoveries, and uses of the novel M-based MXenes (M-MXenes), where M stands for non-Ti TMs (M = Sc, V, Cr, Y, Zr, Nb, Mo, Hf, Ta, W, and Lu), are given. The exceptional qualities of the 2D non-Ti MXene outperform standard Ti-MXene in several applications. There is many advancement in top-down as well as bottom-up production of MXenes family members, which allows for exact control of the M-characteristics MXene NMs to contain cutting-edge applications. This study offers a systematic evaluation of existing research, covering everything in producing complex M-MXenes from primary limitations to the characterization and selection of their applications in accordance with their novel features. The development of double metal combinations, extension of additional metal candidates beyond group-(III-VI)B family, and subsequent development of the 2D TM carbide/TMs nitride/TM carbonitrides to 2D metal boride family are also included in this overview. The possibilities and further recommendations for the way of non-Ti MXene NMs are in the synthesis of NMs will discuss in detail in this critical evaluation.
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Affiliation(s)
- Karim Khan
- School of Electrical Engineering and Intelligentization, Dongguan University of Technology, Dongguan, 523808, China
- Shenzhen Nuoan Environmental and Safety Inc., Shenzhen, 518107, China
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, China
| | - Waqas Ahmad
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Iftikhar Hussain
- Department of Mechanical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, 999077, Hong Kong
- A. J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19104, USA
| | - Mujeeb U Chaudhry
- Department of Engineering, Durham University, Lower Mountjoy, South Rd, Durham, DH1 3LE, UK
| | - Asif Mahmood
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, 2006, Australia
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Republic of Korea
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhongjian Xie
- Shenzhen Children's Hospital, Clinical Medical College of Southern University of Science and Technology, Shenzhen, Guangdong, 518038, P. R. China
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Asghar A, Khan K, Hakami O, Alamier WM, Ali SK, Zelai T, Rashid MS, Tareen AK, Al-Harthi EA. Recent progress in metal oxide-based electrode materials for safe and sustainable variants of supercapacitors. Front Chem 2024; 12:1402563. [PMID: 38831913 PMCID: PMC11144895 DOI: 10.3389/fchem.2024.1402563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Accepted: 04/23/2024] [Indexed: 06/05/2024] Open
Abstract
A significant amount of energy can be produced using renewable energy sources; however, storing massive amounts of energy poses a substantial obstacle to energy production. Economic crisis has led to rapid developments in electrochemical (EC) energy storage devices (EESDs), especially rechargeable batteries, fuel cells, and supercapacitors (SCs), which are effective for energy storage systems. Researchers have lately suggested that among the various EESDs, the SC is an effective alternate for energy storage due to the presence of the following characteristics: SCs offer high-power density (PD), improvable energy density (ED), fast charging/discharging, and good cyclic stability. This review highlighted and analyzed the concepts of supercapacitors and types of supercapacitors on the basis of electrode materials, highlighted the several feasible synthesis processes for preparation of metal oxide (MO) nanoparticles, and discussed the morphological effects of MOs on the electrochemical performance of the devices. In this review, we primarily focus on pseudo-capacitors for SCs, which mainly contain MOs and their composite materials, and also highlight their future possibilities as a useful application of MO-based materials in supercapacitors. The novelty of MO's electrode materials is primarily due to the presence of synergistic effects in the hybrid materials, rich redox activity, excellent conductivity, and chemical stability, making them excellent for SC applications.
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Affiliation(s)
- Ali Asghar
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, China
| | - Karim Khan
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, China
| | - Othman Hakami
- Department of Physical Sciences, Chemistry Division, College of Science, Jazan University, Jazan, Saudi Arabia
| | - Waleed M. Alamier
- Department of Physical Sciences, Chemistry Division, College of Science, Jazan University, Jazan, Saudi Arabia
| | - Syed Kashif Ali
- Department of Physical Sciences, Chemistry Division, College of Science, Jazan University, Jazan, Saudi Arabia
| | - Taharh Zelai
- Department of Physical Sciences, Physics Division, College of Science, Jazan University, Jazan, Saudi Arabia
| | - Muhammad Shahid Rashid
- Department of Physical Sciences, Physics Division, College of Science, Jazan University, Jazan, Saudi Arabia
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, China
| | - Enaam A. Al-Harthi
- College of Science, Department of Chemistry, University of Jeddah, Jeddah, Saudi Arabia
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Wang Q, Zhang R, Chen Q, Duan R. A Review of Femtosecond Laser Processing of Silicon Carbide. MICROMACHINES 2024; 15:639. [PMID: 38793213 PMCID: PMC11124284 DOI: 10.3390/mi15050639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Revised: 05/04/2024] [Accepted: 05/07/2024] [Indexed: 05/26/2024]
Abstract
Silicon carbide (SiC) is a promising semiconductor material as well as a challenging material to machine, owing to its unique characteristics including high hardness, superior thermal conductivity, and chemical inertness. The ultrafast nature of femtosecond lasers enables precise and controlled material removal and modification, making them ideal for SiC processing. In this review, we aim to provide an overview of the process properties, progress, and applications by discussing the various methodologies involved in femtosecond laser processing of SiC. These methodologies encompass direct processing, composite processing, modification of the processing environment, beam shaping, etc. In addition, we have explored the myriad applications that arise from applying femtosecond laser processing to SiC. Furthermore, we highlight recent advancements, challenges, and future prospects in the field. This review provides as an important direction for exploring the progress of femtosecond laser micro/nano processing, in order to discuss the diversity of processes used for manufacturing SiC devices.
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Affiliation(s)
| | - Ru Zhang
- School of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, China; (Q.W.); (Q.C.); (R.D.)
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Bi C, Wu T, Shao J, Jing P, Xu H, Xu J, Guo W, Liu Y, Zhan D. Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:750. [PMID: 38727344 PMCID: PMC11085414 DOI: 10.3390/nano14090750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 04/19/2024] [Accepted: 04/23/2024] [Indexed: 05/12/2024]
Abstract
Tellurium exhibits exceptional intrinsic electronic properties. However, investigations into the modulation of tellurium's electronic properties through physical modification are notably scarce. Here, we present a comprehensive study focused on the evolution of the electronic properties of tellurium crystal flakes under plasma irradiation treatment by employing conductive atomic force microscopy and Raman spectroscopy. The plasma-treated tellurium experienced a process of defect generation through lattice breaking. Prior to the degradation of electronic transport performance due to plasma irradiation treatment, we made a remarkable observation: in the low-energy region of hydrogen plasma-treated tellurium, a notable enhancement in conductivity was unexpectedly detected. The mechanism underlying this enhancement in electronic transport performance was thoroughly elucidated by comparing it with the electronic structure induced by argon plasma irradiation. This study not only fundamentally uncovers the effects of plasma irradiation on tellurium crystal flakes but also unearths an unprecedented trend of enhanced electronic transport performance at low irradiation energies when utilizing hydrogen plasma. This abnormal trend bears significant implications for guiding the prospective application of tellurium-based 2D materials in the realm of electronic devices.
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Affiliation(s)
- Congzhi Bi
- Department of Physics, College of Physical Science and Technology, Research Institution for Biomimetics and Soft Matter, Xiamen University, Xiamen 361005, China;
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Tianyu Wu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
- College of Science, Beihua University, Jilin 132000, China
| | - Jingjing Shao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Pengtao Jing
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Hai Xu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Jilian Xu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Wenxi Guo
- Department of Physics, College of Physical Science and Technology, Research Institution for Biomimetics and Soft Matter, Xiamen University, Xiamen 361005, China;
| | - Yufei Liu
- Key Laboratory of Optoelectronic Technology & Systems, Chongqing University, Chongqing 400044, China
| | - Da Zhan
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
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Modi KH, Pataniya PM, Sumesh CK. 2D Monolayer Catalysts: Towards Efficient Water Splitting and Green Hydrogen Production. Chemistry 2024; 30:e202303978. [PMID: 38299695 DOI: 10.1002/chem.202303978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Revised: 01/28/2024] [Accepted: 01/29/2024] [Indexed: 02/02/2024]
Abstract
A viable alternative to non-renewable hydrocarbon fuels is hydrogen gas, created using a safe, environmentally friendly process like water splitting. An important role in water-splitting applications is played by the development of two-dimensional (2D) layered transition metal chalcogenides (TMDCs), transition metal carbides (MXenes), graphene-derived 2D layered nanomaterials, phosphorene, and hexagonal boron nitride. Advanced synthesis methods and characterization instruments enabled an effective application for improved electrocatalytic water splitting and sustainable hydrogen production. Enhancing active sites, modifying the phase and electronic structure, adding conductive elements like transition metals, forming heterostructures, altering the defect state, etc., can improve the catalytic activity of 2D stacked hybrid monolayer nanomaterials. The majority of global research and development is focused on finding safer substitutes for petrochemical fuels, and this review summarizes recent advancements in the field of 2D monolayer nanomaterials in water splitting for industrial-scale green hydrogen production and fuel cell applications.
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Affiliation(s)
- Krishna H Modi
- Department of Physical Sciences, P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, 388421, Changa, Gujarat, India
| | - Pratik M Pataniya
- Department of Physical Sciences, P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, 388421, Changa, Gujarat, India
| | - C K Sumesh
- Department of Physical Sciences, P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, 388421, Changa, Gujarat, India
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Sári D, Ferroudj A, Semsey D, El-Ramady H, Brevik EC, Prokisch J. Tellurium and Nano-Tellurium: Medicine or Poison? NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:670. [PMID: 38668165 PMCID: PMC11053935 DOI: 10.3390/nano14080670] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Revised: 04/07/2024] [Accepted: 04/10/2024] [Indexed: 04/29/2024]
Abstract
Tellurium (Te) is the heaviest stable chalcogen and is a rare element in Earth's crust (one to five ppb). It was discovered in gold ore from mines in Kleinschlatten near the present-day city of Zlatna, Romania. Industrial and other applications of Te focus on its inorganic forms. Tellurium can be toxic to animals and humans at low doses. Chronic tellurium poisoning endangers the kidney, liver, and nervous system. However, Te can be effective against bacteria and is able to destroy cancer cells. Tellurium can also be used to develop redox modulators and enzyme inhibitors. Soluble salts that contain Te had a role as therapeutic and antimicrobial agents before the advent of antibiotics. The pharmaceutical use of Te is not widespread due to the narrow margin between beneficial and toxic doses, but there are differences between the measure of toxicity based on the Te form. Nano-tellurium (Te-NPs) has several applications: it can act as an adsorptive agent to remove pollutants, and it can be used in antibacterial coating, photo-catalysis for the degradation of dyes, and conductive electronic materials. Nano-sized Te particles are the most promising and can be produced in both chemical and biological ways. Safety assessments are essential to determine the potential risks and benefits of using Te compounds in various applications. Future challenges and directions in developing nano-materials, nano-alloys, and nano-structures based on Te are still open to debate.
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Affiliation(s)
- Daniella Sári
- Nano-Food Laboratory, Department of Animal Husbandry, Institute of Animal Science, Biotechnology and Nature Conservation, Faculty of Agricultural and Food Sciences and Environmental Management, University of Debrecen, 138 Böszörményi Street, 4032 Debrecen, Hungary; (A.F.); (D.S.); (J.P.)
| | - Aya Ferroudj
- Nano-Food Laboratory, Department of Animal Husbandry, Institute of Animal Science, Biotechnology and Nature Conservation, Faculty of Agricultural and Food Sciences and Environmental Management, University of Debrecen, 138 Böszörményi Street, 4032 Debrecen, Hungary; (A.F.); (D.S.); (J.P.)
| | - Dávid Semsey
- Nano-Food Laboratory, Department of Animal Husbandry, Institute of Animal Science, Biotechnology and Nature Conservation, Faculty of Agricultural and Food Sciences and Environmental Management, University of Debrecen, 138 Böszörményi Street, 4032 Debrecen, Hungary; (A.F.); (D.S.); (J.P.)
| | - Hassan El-Ramady
- Nano-Food Laboratory, Department of Animal Husbandry, Institute of Animal Science, Biotechnology and Nature Conservation, Faculty of Agricultural and Food Sciences and Environmental Management, University of Debrecen, 138 Böszörményi Street, 4032 Debrecen, Hungary; (A.F.); (D.S.); (J.P.)
- Soil and Water Department, Faculty of Agriculture, Kafrelsheikh University, Kafr El-Sheikh 33516, Egypt
| | - Eric C. Brevik
- College of Agricultural, Life, and Physical Sciences, Southern Illinois University, Carbondale, IL 62901, USA;
| | - József Prokisch
- Nano-Food Laboratory, Department of Animal Husbandry, Institute of Animal Science, Biotechnology and Nature Conservation, Faculty of Agricultural and Food Sciences and Environmental Management, University of Debrecen, 138 Böszörményi Street, 4032 Debrecen, Hungary; (A.F.); (D.S.); (J.P.)
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Wang P, Li Z, Xia X, Zhang J, Lan Y, Zhu L, Ke Q, Mu H, Lin S. Anisotropic Te/PdSe 2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401216. [PMID: 38593322 DOI: 10.1002/smll.202401216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 03/16/2024] [Indexed: 04/11/2024]
Abstract
Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously-reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W-1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation-engineered heterostructures in enhancing polarization-sensitive photodetectors and advancing optoelectronic technology.
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Affiliation(s)
- Pu Wang
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Zhao Li
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- School of Automation and Information Engineering, Xi'an University of Technology, Xi'an, 710048, P. R. China
| | - Yingying Lan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lu Zhu
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Qingqing Ke
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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Zhang P, Liang Q, Zhou Q, Chen J, Li M, Deng Y, Liang W, Zhang L, Zhang Q, Gu L, Ge C, Jin KJ, Zhang C, Yang G. High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions. LIGHT, SCIENCE & APPLICATIONS 2024; 13:67. [PMID: 38443377 PMCID: PMC10915160 DOI: 10.1038/s41377-024-01393-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 01/17/2024] [Accepted: 01/21/2024] [Indexed: 03/07/2024]
Abstract
High-performance active terahertz modulators as the indispensable core components are of great importance for the next generation communication technology. However, they currently suffer from the tradeoff between modulation depth and speed. Here, we introduce two-dimensional (2D) tellurium (Te) nanofilms with the unique structure as a new class of optically controlled terahertz modulators and demonstrate their integrated heterojunctions can successfully improve the device performances to the optimal and applicable levels among the existing all-2D broadband modulators. Further photoresponse measurements confirm the significant impact of the stacking order. We first clarify the direction of the substrate-induced electric field through first-principles calculations and uncover the unusual interaction mechanism in the photoexcited carrier dynamics associated with the charge transfer and interlayer exciton recombination. This advances the fundamental and applicative research of Te nanomaterials in high-performance terahertz optoelectronics.
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Affiliation(s)
- Pujing Zhang
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Qihang Liang
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Qingli Zhou
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China.
| | - Jinyu Chen
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Menglei Li
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Yuwang Deng
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Wanlin Liang
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Liangliang Zhang
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Department of Materials Science and Engineering, Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Tsinghua University, Beijing, 100084, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Cunlin Zhang
- Department of Physics, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Capital Normal University, Beijing, 100048, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
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10
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Guo X, Lu X, Jiang P, Bao X. Touchless Thermosensation Enabled by Flexible Infrared Photothermoelectric Detector for Temperature Prewarning Function of Electronic Skin. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313911. [PMID: 38424290 DOI: 10.1002/adma.202313911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 02/12/2024] [Indexed: 03/02/2024]
Abstract
Artificial skin, endowed with the capability to perceive thermal stimuli without physical contact, will bring innovative interactive experiences into smart robotics and augmented reality. The implementation of touchless thermosensation, responding to both hot and cold stimuli, relies on the construction of a flexible infrared detector operating in the long-wavelength infrared range to capture the spontaneous thermal radiation. This imposes rigorous requirements on the photodetection performance and mechanical flexibility of the detector. Herein, a flexible and wearable infrared detector is presented, on basis of the photothermoelectric coupling of the tellurium-based thermoelectric multilayer film and the infrared-absorbing polyimide substrate. By suppressing the optical reflection loss and aligning the destructive interference position with the absorption peak of polyimide, the fabricated thermopile detector exhibits high sensitivity to the thermal radiation over a broad source temperature range from -50 to 110 °C, even capable of resolving 0.05 °C temperature change. Spatially resolved radiation distribution sensing is also achieved by constructing an integrated thermopile array. Furthermore, an established temperature prewarning system is demonstrated for soft robotic gripper, enabling the identification of noxious thermal stimuli in a contactless manner. A feasible strategy is offered here to integrate the infrared detection technique into the sensory modality of electronic skin.
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Affiliation(s)
- Xiaohan Guo
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaowei Lu
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- School of Biomedical Engineering, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, 215123, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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11
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Zhang W, Ma Z, Wang J, Shao B, Zuo X. Tunability of electronic properties in the 2D MoS 2/α-tellurene/WS 2 heterotrilayer via biaxial strain and electric field. Phys Chem Chem Phys 2024; 26:6362-6371. [PMID: 38315005 DOI: 10.1039/d3cp06002k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Alpha-tellurene (α-Te), a two-dimensional (2D) material that has been theoretically predicted and experimentally verified, has garnered significant attention due to its unique properties. In this study, we investigated the 2D trilayer MoS2/α-Te/WS2 van der Waals heterostructure with different stacking orders using first-principles calculations. Our results indicate that this heterotrilayer exhibits an intrinsic type-I band alignment and an indirect band gap similar to that of monolayer α-Te. Notably, the band edges of the heterostructure can be modulated by biaxial strain and an external electric field, enabling these edges to arise from different monolayers. This controlled manipulation facilitates the effective separation of photogenerated electron-hole pairs and prolongs the carrier lifetime. Moreover, the heterostructure can undergo a transition from an indirect to a direct band gap under biaxial compressive strain or a moderate negative electric field, and semiconductor-to-metal transition can also be achieved by intensifying the biaxial strain and external electric field. Overall, our research provides valuable theoretical insights into the potential applications of α-Te-based heterostructures, rendering them promising candidates for the next generation of nanodevices.
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Affiliation(s)
- Wenli Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Zhuang Ma
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China
| | - Jing Wang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Bin Shao
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Nankai University, Tianjin 300350, China
| | - Xu Zuo
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Tianjin 300350, China
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12
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Xia Y, Peng L, Shu L, Wu A, Shao H, Li B, Zhang J, Sui Z, Zhu H, Zhang H. Strong Intervalley Scattering-Induced Renormalization of Electronic and Thermal Transport Properties and Selection Rule Analysis in 2D Tellurium. ACS NANO 2024. [PMID: 38320191 DOI: 10.1021/acsnano.3c12457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on ab initio calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of α-Te and β-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of α-Te and β-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 × 1013 cm-2 (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for α-Te and β-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for α-Te than that for β-Te due to the presence of an acoustic-optical phonon gap in α-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.
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Affiliation(s)
- Yujie Xia
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Lei Peng
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Le Shu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Ao Wu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hezhu Shao
- College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
| | - Ben Li
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Juan Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Zhan Sui
- Shanghai Institute of Laser and Plasma, China Academy of Engineering Physics, 197 Chengzhong Road, Jiading, Shanghai 201800, China
| | - Heyuan Zhu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hao Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
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13
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Rani A, Ren W, Lee HJ, Hong SH, Kim TG. Synthesis, Properties, and Application of Ultrathin and Flexible Tellurium Nanorope Films: Beyond Conventional 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2300557. [PMID: 37641190 DOI: 10.1002/smll.202300557] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 07/09/2023] [Indexed: 08/31/2023]
Abstract
Nanomaterials that can be easily processed into thin films are highly desirable for their wide range of applicability in electrical and optical devices. Currently, Te-based 2D materials are of interest because of their superior electrical properties compared to transition metal dichalcogenide materials. However, the large-scale manufacturing of these materials is challenging, impeding their commercialization. This paper reports on ultrathin, large-scale, and highly flexible Te and Te-metal nanorope films grown via low-power radiofrequency sputtering for a short period at 25 °C. Additionally, the feasibility of such films as transistor channels and flexible transparent conductive electrodes is discussed. A 20 nm thick Te-Ni-nanorope-channel-based transistor exhibits a high mobility (≈450 cm2 V-1 s-1 ) and on/off ratio (105 ), while 7 nm thick Te-W nanorope electrodes exhibit an extremely low haze (1.7%) and sheet resistance (30 Ω sq-1 ), and high transmittance (86.4%), work function (≈4.9 eV), and flexibility. Blue organic light-emitting diodes with 7 nm Te-W anodes exhibit significantly higher external quantum efficiencies (15.7%), lower turn-on voltages (3.2 V), and higher and more uniform viewing angles than indium-tin-oxide-based devices. The excellent mechanical flexibility and easy coating capability offered by Te nanoropes demonstrate their superiority over conventional nanomaterials and provide an effective outlet for multifunctional devices.
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Affiliation(s)
- Adila Rani
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02842, Republic of Korea
| | - Wanqi Ren
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02842, Republic of Korea
| | - Ho Jin Lee
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02842, Republic of Korea
| | - Seok Hee Hong
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02842, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02842, Republic of Korea
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14
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Yuan Y, Peng X, Weng X, He J, Liao C, Wang Y, Liu L, Zeng S, Song J, Qu J. Two-dimensional nanomaterials as enhanced surface plasmon resonance sensing platforms: Design perspectives and illustrative applications. Biosens Bioelectron 2023; 241:115672. [PMID: 37716156 DOI: 10.1016/j.bios.2023.115672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 08/16/2023] [Accepted: 09/04/2023] [Indexed: 09/18/2023]
Abstract
Both increasing demand for ultrasensitive detection in the scientific community and significant new breakthroughs in materials science field have inspired and promoted the development of new-generation multifunctional plasmonic sensing platforms by adopting promising plasmonic nanomaterials. Recently, high-quality surface plasmon resonance (SPR) sensors, assisted by two dimensional (2D) nanomaterials including 2D van der Waals (vdWs) materials (such as graphene/graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, antimonene, tellurene, MXenes, and metal oxides), 2D metal-organic frameworks (MOFs), 2D hyperbolic metamaterials (HMMs), and 2D optical metasurfaces, have emerged as a class of novel plasmonic sensing platforms that show unprecedented detection sensitivity and impressive performance. This review of recent progress in 2D nanomaterials-enhanced SPR platforms will highlight their compelling plasmonic enhancement features, working mechanisms, and design methodologies, as well as discuss illustrative practical applications. Hence, it is of great importance to describe the latest research progress in 2D nanomaterials-enhanced SPR sensing cases. In this review, we present some concepts of SPR enhanced by 2D nanomaterials, including the basic principles of SPR, signal modulation approaches, and working enhancement mechanisms for various 2D materials-enhanced SPR systems. In addition, we also demonstrate a detailed categorization of 2D nanomaterials-enhanced SPR sensing platforms and comment on their ability to realize ultrasensitive SPR detection. Finally, we conclude with future perspectives for exploring a new generation of 2D nanomaterials-based sensors.
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Affiliation(s)
- Yufeng Yuan
- School of Electronic Engineering and Intelligentization, Dongguan University of Technology, Dongguan, Guangdong, 523808, China; State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Xiao Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Xiaoyu Weng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Jun He
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Changrui Liao
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Yiping Wang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Liwei Liu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Shuwen Zeng
- Light, Nanomaterials & Nanotechnologies (L2n), CNRS-EMR 7004, Université de Technologie de Troyes, 10000, Troyes, France.
| | - Jun Song
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Junle Qu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
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15
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Huang W, Shi S, Lv H, Ju Z, Liu Q, Chen T. Tellurium-driven maple leaf-shaped manganese nanotherapeutics reshape tumor microenvironment via chemical transition in situ to achieve highly efficient radioimmunotherapy of triple negative breast cancer. Bioact Mater 2023; 27:560-573. [PMID: 37223423 PMCID: PMC10200799 DOI: 10.1016/j.bioactmat.2023.04.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Revised: 04/09/2023] [Accepted: 04/11/2023] [Indexed: 05/25/2023] Open
Abstract
The therapeutic efficacy of radioimmunotherapy against triple negative breast cancer (TNBC) is largely limited by the complicated tumor microenvironment (TME) and its immunosuppressive state. Thus developing a strategy to reshape TME is expected to achieve highly efficient radioimmunotherapy. Therefore, we designed and synthesized a tellurium (Te)-driven maple leaf manganese carbonate nanotherapeutics (MnCO3@Te) by gas diffusion method, but also provided a chemical catalytic strategy in situ to augment ROS level and activate immune cells for improving cancer radioimmunotherapy. As expected, with the help of H2O2 in TEM, MnCO3@Te heterostructure with reversible Mn3+/Mn2+ transition could catalyze the intracellular ROS overproduction to amplify radiotherapy. In addition, by virtue of the ability to scavenge H+ in TME by carbonate group, MnCO3@Te directly promote the maturation of dendritic cells and macrophage M1 repolarization by stimulator of interferon genes (STING) pathway activation, resulting in remodeling immuno-microenvironment. As a result, MnCO3@Te synergized with radiotherapy and immune checkpoint blockade therapy effectively inhibited the breast cancer growth and lung metastasis in vivo. Collectively, these findings indicate that MnCO3@Te as an agonist, successfully overcome radioresistance and awaken immune systems, showing promising potential for solid tumor radioimmunotherapy.
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Affiliation(s)
- Wei Huang
- Jieyang Medical Research Center, Jieyang People's Hospital, Tianfu Road 107, Rongcheng District, Jieyang, Guangdong, 522000, China
| | - Sujiang Shi
- Department of Chemistry, Jinan University, Guangzhou, 510632, China
| | - Haoran Lv
- Jieyang Medical Research Center, Jieyang People's Hospital, Tianfu Road 107, Rongcheng District, Jieyang, Guangdong, 522000, China
- Department of Nephrology, The First Affiliated Hospital, NHC Key Laboratory of Clinical Nephrology (Sun Yat-Sen University) and Guangdong Provincial Key Laboratory of Nephrology, Sun Yat-sen University, Guangzhou, China
| | - Zhenyu Ju
- Key Laboratory of Regenerative Medicine of Ministry of Education, Institute of Aging and Regenerative Medicine, Jinan University, Guangzhou, 510632, China
| | - Qinghua Liu
- Jieyang Medical Research Center, Jieyang People's Hospital, Tianfu Road 107, Rongcheng District, Jieyang, Guangdong, 522000, China
- Department of Nephrology, The First Affiliated Hospital, NHC Key Laboratory of Clinical Nephrology (Sun Yat-Sen University) and Guangdong Provincial Key Laboratory of Nephrology, Sun Yat-sen University, Guangzhou, China
| | - Tianfeng Chen
- Jieyang Medical Research Center, Jieyang People's Hospital, Tianfu Road 107, Rongcheng District, Jieyang, Guangdong, 522000, China
- Department of Chemistry, Jinan University, Guangzhou, 510632, China
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16
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Shangguan L, He LB, Ran YT, Hong H, Zhu JH, Gao YT, Sun LT. Hydrothermal Synthesis of Te Nanosheets: Growth Mechanism and Electrical Property. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38707-38715. [PMID: 37527542 DOI: 10.1021/acsami.3c08118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Hydrothermal synthesis is a highly efficient way to yield multiform Te nanosheets. However, the growth mechanisms and property discrepancies between different types of Te nanosheets are still unclear. In this paper, we perform an investigation on this issue by monitoring the hydrothermally synthesized Te nanosheets at different growth stages with transmission electron microscopy and electrical tests. Three main types of Te nanosheets and their variants are revealed including trapezoidal and "V"-shaped configurations. It is found that the different types of Te nanosheets dominate at different reaction stages, indicating a sequential growth scenario. Surfactants and surface energy co-determine the growth kinetics, while the crystallographic attachments lead to specifically included angles of 74° and 41° in the "V"-shaped Te nanosheets. The fractions of the three main types of Te nanosheets as a function of reaction time are statistically tracked, and their crystalline structures, interfaces, and preferential growth orientations are uncovered. Moreover, the electrical properties of the Te nanosheets are tested, and the results show an interface-related feature. These findings provide some new insights into the synthesis and property of low-dimensional Te functional materials.
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Affiliation(s)
- Lei Shangguan
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Long-Bing He
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
- Centre for Advanced Materials and Manufacture, Joint Research Institute of Southeast University and Monash University, Suzhou 215123, P. R. China
| | - Ya-Ting Ran
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Hua Hong
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Jiong-Hao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Yu-Tian Gao
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Li-Tao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
- Centre for Advanced Materials and Manufacture, Joint Research Institute of Southeast University and Monash University, Suzhou 215123, P. R. China
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17
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Mithun KP, Tripathi S, Roy A, Ravishankar N, Sood AK. Ultrafast time-resolved carrier dynamics in tellurium nanowires using optical pump terahertz probe spectroscopy. NANOSCALE 2023. [PMID: 37465858 DOI: 10.1039/d3nr01588b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
We report carrier relaxation dynamics in semiconducting tellurium nanowires (average diameter ∼ 10 nm) using ultrafast time-resolved terahertz spectroscopy. After photoexcitation using an 800 nm pump pulse, we observed an initial increase in the THz conductivity due to the absorption of THz radiation by photoexcited carriers. The time evolution of the differential conductivity (Δσ(τpp) = σpump on(τpp) - σpump off) shows a bi-exponential relaxation with the initial fast decay time scale of τ1 ∼ 25 ps followed by a longer relaxation time constant of τ2 ∼ 100 ps. Interestingly, the two time scales depend on the amount of the capping agent present on the surface of TeNWs, showing a faster relaxation of the photoexcited carriers as the percentage of capping decreases. This is physically interpreted as the surface state mediated relaxation mechanism of the photo-pumped carriers depending on the density of available surface states. A quantitative understanding is obtained using a coupled rate equation model taking into account the decay mechanisms determined from the surface mediated relaxation rate (DS) and direct recombination rate (DR) of the electron-hole pairs. Furthermore, the measured lattice temperature (TL) dependent dynamics, showing a faster relaxation at lower temperature, is understood using the same rate equation model, giving a power law dependence of the electron-hole recombination rate (DR) on TL as DR ∝ TL-1/2. This is explained by estimating DR using the van Roosbroeck-Shockley theory taking into account the density of states () of one-dimensional nanowires. Furthermore, to understand the measured frequency-dependent THz photoconductivity, we model Δσ(ω) using the Boltzmann transport equation taking into account the energy-dependent scattering rates showing the dominant role of short range (Γsr) and Coulomb scattering (ΓC) rates in the relaxation process, which further provides a measure of the charged and neutral impurity concentrations.
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Affiliation(s)
- K P Mithun
- Center for Ultrafast Laser Applications, Indian Institute of Science, Bangalore 560012, India.
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shalini Tripathi
- Materials Research Center, Indian Institute of Science, Bangalore 560012, India
| | - Ahin Roy
- Materials Research Center, Indian Institute of Science, Bangalore 560012, India
- Materials Science Center, Indian Institute of Technology, Kharagpur, 721302, India
| | - N Ravishankar
- Materials Research Center, Indian Institute of Science, Bangalore 560012, India
| | - A K Sood
- Center for Ultrafast Laser Applications, Indian Institute of Science, Bangalore 560012, India.
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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18
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Nie L, Zhao Y, Guo P, Wang W, Jin Z, Zhang D, Li X, Guo Y, Chai T, Liu R. Graphdiyne-polymer composites for a hybrid bound-state pulsed fiber laser. APPLIED OPTICS 2023; 62:5023-5027. [PMID: 37707280 DOI: 10.1364/ao.493010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2023] [Accepted: 05/28/2023] [Indexed: 09/15/2023]
Abstract
In this paper, the graphdiyne (GDY)-polymethyl methacrylate (PMMA) films are prepared by a spin-coating method. The PMMA films have the function of isolating GDY from air and protecting the GDY from mechanical damage. The nonlinear optical properties of GDY-PMMA films are probed experimentally. The nonlinear optical responses of GDY-PMMA films with a modulation depth of ∼4.94% and saturated magnetization of ∼0.3M W/c m 2 are proved. When the GDY-PMMA films are applied to an erbium-doped hybrid passively mode-locked fiber laser (saturable absorber), the bound-state solitons, which are also called soliton molecules, can be obtained. The soliton molecule has a time separation of 13.31 ps, and the spectral modulation period of 0.58 nm. Along with the pump power increase, the separation of bound-state pulses becomes larger. When the pump power is fixed, stable bound solitons can be observed without any degeneration for more than 4.5 h. It is demonstrated that GDY-PMMA films have excellent nonlinear optical performance in a near-infrared regime, which we believe can be a novel type of photonics instrument and has a number of properties that are potentially promising in the ultrafast properties of laser.
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19
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Liu K, Niu J, Liu L, Tian F, Nie H, Liu X, Chen K, Zhao R, Sun S, Jiao M, Tian M, Sun X, Niu L, Sun X, Wang H, Long W, Feng L, Mu X, Zhang XD. LUMO-Mediated Se and HOMO-Mediated Te Nanozymes for Selective Redox Biocatalysis. NANO LETTERS 2023; 23:5131-5140. [PMID: 37191492 DOI: 10.1021/acs.nanolett.3c01068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Selenium (Se) and tellurium (Te) nanomaterials with novel chain-like structures have attracted widespread interest owing to their intriguing properties. Unfortunately, the still-unclear catalytic mechanisms have severely limited the development of biocatalytic performance. In this work, we developed chitosan-coated Se nanozymes with a 23-fold higher antioxidative activity than Trolox and bovine serum albumin coated Te nanozymes with stronger prooxidative biocatalytic effects. Based on density functional theory calculations, we first propose that the Se nanozyme with Se/Se2- active centers favored reactive oxygen species (ROS) clearance via a LUMO-mediated mechanism, while the Te nanozyme with Te/Te4+ active centers promoted ROS production through a HOMO-mediated mechanism. Furthermore, biological experiments confirmed that the survival rate of γ-irritated mice treated with the Se nanozyme was maintained at 100% for 30 days by inhibiting oxidation. However, the Te nanozyme had the opposite biological effect via promoting radiation oxidation. The present work provides a new strategy for improving the catalytic activities of Se and Te nanozymes.
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Affiliation(s)
- Kaijin Liu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Jiaxue Niu
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Ling Liu
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Fangzhen Tian
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Hongmei Nie
- Tianjin Key Laboratory of Molecular Nuclear Medicine, Institute of Radiation Medicine, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin 300192, People's Republic of China
| | - Xiaoyu Liu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Ke Chen
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Ruoli Zhao
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Si Sun
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Menglu Jiao
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Maoye Tian
- Tianjin Key Laboratory of Molecular Nuclear Medicine, Institute of Radiation Medicine, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin 300192, People's Republic of China
| | - Xinyu Sun
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Lanfei Niu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Xinyi Sun
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Hao Wang
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Wei Long
- Tianjin Key Laboratory of Molecular Nuclear Medicine, Institute of Radiation Medicine, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin 300192, People's Republic of China
| | - Liefeng Feng
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Xiaoyu Mu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Xiao-Dong Zhang
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
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20
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Torun G, Kishi T, Pugliese D, Milanese D, Bellouard Y. Formation Mechanism of Elemental Te Produced in Tellurite Glass Systems by Femtosecond Laser Irradiation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210446. [PMID: 36749876 DOI: 10.1002/adma.202210446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 12/23/2022] [Indexed: 05/19/2023]
Abstract
The formation of elemental trigonal tellurium (t-Te) on tellurite glass surfaces exposed to femtosecond laser pulses is discussed. Specifically, the underlying elemental crystallization phenomenon is investigated by altering laser parameters in common tellurite glass compositions under various ambient conditions. Elemental crystallization of t-Te by a single femtosecond laser pulse is unveiled by high-resolution imaging and analysis. The thermal diffusion model reveals the absence of lattice melting upon a single laser pulse, highlighting the complexity of the phase transformation. The typical cross-section displays three different crystal configurations over its depth, in which the overall thickness increases with each subsequent pulse. The effect of various controlled atmospheres shows the suppressing nature of the elemental crystallization, whereas the substrate temperature shows no significant impact on the nucleation of t-Te nanocrystals. This research gives new insight into the elemental crystallization of glass upon femtosecond laser irradiation and shows the potential to fabricate functional transparent electronic micro/nanodevices.
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Affiliation(s)
- Gözden Torun
- Galatea Laboratory, STI/IEM, Ecole Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland
| | - Tetsuo Kishi
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, 152-8552, Japan
| | - Diego Pugliese
- Department of Electronics and Telecommunications, Polytechnic University of Turin, 10129, Turin, Italy
- Department of Applied Science and Technology and INSTM RU, Polytechnic University of Turin, 10129, Turin, Italy
| | - Daniel Milanese
- Department of Engineering and Architecture and INSTM RU, University of Parma, 43124, Parma, Italy
| | - Yves Bellouard
- Galatea Laboratory, STI/IEM, Ecole Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland
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21
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Zha J, Shi S, Chaturvedi A, Huang H, Yang P, Yao Y, Li S, Xia Y, Zhang Z, Wang W, Wang H, Wang S, Yuan Z, Yang Z, He Q, Tai H, Teo EHT, Yu H, Ho JC, Wang Z, Zhang H, Tan C. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211598. [PMID: 36857506 DOI: 10.1002/adma.202211598] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/16/2023] [Indexed: 05/19/2023]
Abstract
Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.
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Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Apoorva Chaturvedi
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Peng Yang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huide Wang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shaocong Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhen Yuan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong, 999077, P. R. China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Edwin Hang Tong Teo
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
- School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
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22
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Khan K, Tareen AK, Iqbal M, Ye Z, Xie Z, Mahmood A, Mahmood N, Zhang H. Recent Progress in Emerging Novel MXenes Based Materials and their Fascinating Sensing Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206147. [PMID: 36755364 DOI: 10.1002/smll.202206147] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2022] [Revised: 11/28/2022] [Indexed: 05/11/2023]
Abstract
Early transition metals based 2D carbides, nitrides and carbonitrides nanomaterials are known as MXenes, a novel and extensive new class of 2D materials family. Since the first accidently synthesis based discovery of Ti3 C2 in 2011, more than 50 additional compositions have been experimentally reported, including at least eight distinct synthesis methods and also more than 100 stoichiometries are theoretically studied. Due to its distinctive surface chemistry, graphene like shape, metallic conductivity, high hydrophilicity, outstanding mechanical and thermal properties, redox capacity and affordable with mass-produced nature, this diverse MXenes are of tremendous scientific and technological significance. In this review, first we'll come across the MXene based nanomaterials possible synthesis methods, their advantages, limitations and future suggestions, new chemistry related to their selected properties and potential sensing applications, which will help us to explain why this family is growing very fast as compared to other 2D families. Secondly, problems that help to further improve commercialization of the MXene nanomaterials based sensors are examined, and many advances in the commercializing of the MXene nanomaterials based sensors are proposed. At the end, we'll go through the current challenges, limitations and future suggestions.
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Affiliation(s)
- Karim Khan
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan, 523808, China
- Shenzhen Nuoan Environmental & Safety Inc., Shenzhen, 518107, P. R. China
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, China
| | - Muhammad Iqbal
- Department of BioChemistry, Quaid-i-Azam University, Islamabad, 45320, Islamic Republic of Pakistan
| | - Zhang Ye
- School of Chemistry and Chemical Engineering, University of South China, Hengyang, Hunan, 421001, China
| | - Zhongjian Xie
- Shenzhen International Institute for Biomedical Research, Shenzhen, Guangdong, 518116, China
| | - Asif Mahmood
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, 2006, Australia
| | - Nasir Mahmood
- School of Science, The Royal Melbourne Institute of Technology University, Melbourne, Victoria, VIC 3001, Australia
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China
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23
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Yoon J, You B, Kim Y, Bak J, Yang M, Park J, Hahm MG, Lee M. Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18463-18472. [PMID: 36881815 DOI: 10.1021/acsami.3c00254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
While neuromorphic computing can define a new era for next-generation computing architecture, the introduction of an efficient synaptic transistor for neuromorphic edge computing still remains a challenge. Here, we envision an atomically thin 2D Te synaptic device capable of achieving a desirable neuromorphic edge computing design. The hydrothermally grown 2D Te nanosheet synaptic transistor apparently mimicked the biological synaptic nature, exhibiting 100 effective multilevel states, a low power consumption of ∼110 fJ, excellent linearity, and short-/long-term plasticity. Furthermore, the 2D Te synaptic device achieved reconfigurable MNIST recognition accuracy characteristics of 88.2%, even after harmful detergent environment infection. We believe that this work serves as a guide for developing futuristic neuromorphic edge computing.
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Affiliation(s)
- Jeechan Yoon
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Bolim You
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Yuna Kim
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Jina Bak
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Mino Yang
- Korea Basic Science Institute Seoul, 145 anam-ro Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jihyang Park
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Moonsang Lee
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
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24
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Elbanna A, Jiang H, Fu Q, Zhu JF, Liu Y, Zhao M, Liu D, Lai S, Chua XW, Pan J, Shen ZX, Wu L, Liu Z, Qiu CW, Teng J. 2D Material Infrared Photonics and Plasmonics. ACS NANO 2023; 17:4134-4179. [PMID: 36821785 DOI: 10.1021/acsnano.2c10705] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.
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Affiliation(s)
- Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Hao Jiang
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Juan-Feng Zhu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Dongjue Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Samuel Lai
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xian Wei Chua
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Ze Xiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
- Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore
| | - Lin Wu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
- Institute of High Performance Computing, Agency for Science Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
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25
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Zhao T, Guo J, Li T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y, Xu T, Xie R, Gao P, Wang X, Hu W. Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives. Chem Soc Rev 2023; 52:1650-1671. [PMID: 36744507 DOI: 10.1039/d2cs00657j] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
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Affiliation(s)
- Tiange Zhao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. .,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Pingqi Gao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China.,Suzhou Laboratory, Suzhou, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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26
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Highly Efficient, Remarkable Sensor Activity and energy storage properties of MXenes and Borophene nanomaterials. PROG SOLID STATE CH 2023. [DOI: 10.1016/j.progsolidstchem.2023.100392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/15/2023]
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27
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Peng X, Rahim A, Peng W, Jiang F, Gu Z, Wen S. Recent Progress in Cyclic Aryliodonium Chemistry: Syntheses and Applications. Chem Rev 2023; 123:1364-1416. [PMID: 36649301 PMCID: PMC9951228 DOI: 10.1021/acs.chemrev.2c00591] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2022] [Indexed: 01/18/2023]
Abstract
Hypervalent aryliodoumiums are intensively investigated as arylating agents. They are excellent surrogates to aryl halides, and moreover they exhibit better reactivity, which allows the corresponding arylation reactions to be performed under mild conditions. In the past decades, acyclic aryliodoniums are widely explored as arylation agents. However, the unmet need for acyclic aryliodoniums is the improvement of their notoriously low reaction economy because the coproduced aryl iodides during the arylation are often wasted. Cyclic aryliodoniums have their intrinsic advantage in terms of reaction economy, and they have started to receive considerable attention due to their valuable synthetic applications to initiate cascade reactions, which can enable the construction of complex structures, including polycycles with potential pharmaceutical and functional properties. Here, we are summarizing the recent advances made in the research field of cyclic aryliodoniums, including the nascent design of aryliodonium species and their synthetic applications. First, the general preparation of typical diphenyl iodoniums is described, followed by the construction of heterocyclic iodoniums and monoaryl iodoniums. Then, the initiated arylations coupled with subsequent domino reactions are summarized to construct polycycles. Meanwhile, the advances in cyclic aryliodoniums for building biaryls including axial atropisomers are discussed in a systematic manner. Finally, a very recent advance of cyclic aryliodoniums employed as halogen-bonding organocatalysts is described.
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Affiliation(s)
- Xiaopeng Peng
- College
of Pharmacy, Key Laboratory of Prevention and Treatment of Cardiovascular
and Cerebrovascular Diseases, Ministry of Education, Jiangxi Province
Key Laboratory of Biomaterials and Biofabrication for Tissue Engineering, Gannan Medical University, Ganzhou341000, P.R. China
- State
Key Laboratory of Oncology in South China, Collaborative Innovation
Center for Cancer Medicine, Sun Yat-sen
University Cancer Center, 651 Dongfeng East Road, Guangzhou510060, P. R. China
| | - Abdur Rahim
- Department
of Chemistry, University of Science and
Technology of China, 96 Jinzhai Road, Hefei230026, P. R. China
| | - Weijie Peng
- College
of Pharmacy, Key Laboratory of Prevention and Treatment of Cardiovascular
and Cerebrovascular Diseases, Ministry of Education, Jiangxi Province
Key Laboratory of Biomaterials and Biofabrication for Tissue Engineering, Gannan Medical University, Ganzhou341000, P.R. China
| | - Feng Jiang
- College
of Pharmacy, Key Laboratory of Prevention and Treatment of Cardiovascular
and Cerebrovascular Diseases, Ministry of Education, Jiangxi Province
Key Laboratory of Biomaterials and Biofabrication for Tissue Engineering, Gannan Medical University, Ganzhou341000, P.R. China
| | - Zhenhua Gu
- Department
of Chemistry, University of Science and
Technology of China, 96 Jinzhai Road, Hefei230026, P. R. China
| | - Shijun Wen
- State
Key Laboratory of Oncology in South China, Collaborative Innovation
Center for Cancer Medicine, Sun Yat-sen
University Cancer Center, 651 Dongfeng East Road, Guangzhou510060, P. R. China
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28
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Perry SC, White J, Nandhakumar I. Template-free electrochemical deposition of tellurium nanowires with eutectic solvents. Electrochim Acta 2023. [DOI: 10.1016/j.electacta.2022.141674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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Perry SC, White J, Nandhakumar I. Electroless deposition of tellurium nanowires in eutectic solvents using immobilised silver islands. RSC Adv 2022; 12:35938-35942. [PMID: 36545064 PMCID: PMC9752427 DOI: 10.1039/d2ra06356e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2022] [Accepted: 12/07/2022] [Indexed: 12/23/2022] Open
Abstract
In this work we demonstrate a new approach towards the electroless deposition of tellurium nanowires in deep eutectic solvents. Unlike most electroless deposition where the substrate is sacrificed to drive the reduction, our process uses immobilised silver epoxy islands on gold films to give localised galvanic displacement of the silver, resulting in an even growth of wires across the entire gold electrode surface. We demonstrate the strong dependence of the nanostructure on the experimental conditions, with changes in bath temperature, tellurium concentration and the halide component of the solvent leading to sizeable alterations in the nanowire geometry. This demonstrates electroless deposition as a promising synthetic route towards low-dimensional tellurium nanostructures.
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Affiliation(s)
- Samuel C. Perry
- Department of Chemistry, University of SouthamptonSouthamptonUK
| | - Joshua White
- Department of Chemistry, University of SouthamptonSouthamptonUK
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30
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Tellurium-Modified Nucleosides, Nucleotides, and Nucleic Acids with Potential Applications. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27238379. [PMID: 36500495 PMCID: PMC9737395 DOI: 10.3390/molecules27238379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 11/22/2022] [Accepted: 11/23/2022] [Indexed: 12/05/2022]
Abstract
Tellurium was successfully incorporated into proteins and applied to protein structure determination through X-ray crystallography. However, studies on tellurium modification of DNA and RNA are limited. This review highlights the recent development of Te-modified nucleosides, nucleotides, and nucleic acids, and summarizes the main synthetic approaches for the preparation of 5-PhTe, 2'-MeTe, and 2'-PhTe modifications. Those modifications are compatible with solid-phase synthesis and stable during Te-oligonucleotide purification. Moreover, the ideal electronic and atomic properties of tellurium for generating clear isomorphous signals give Te-modified DNA and RNA great potential applications in 3D crystal structure determination through X-ray diffraction. STM study also shows that Te-modified DNA has strong topographic and current peaks, which immediately suggests potential applications in nucleic acid direct imaging, nanomaterials, molecular electronics, and diagnostics. Theoretical studies indicate the potential application of Te-modified nucleosides in cancer therapy.
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Li J, Cao D, Chen F, Wu D, Yan Y, Du J, Yang J, Tian Y, Li X, Lin P. Polarity-Reversible Te/WSe 2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53202-53212. [PMID: 36395442 DOI: 10.1021/acsami.2c17331] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
As a p-type elemental material with high carrier mobility, superior ambient stability, and anisotropic crystal structure, emerging two-dimensional (2D) tellurium (Te) has been considered a successor to black phosphorus for developing infrared-related optoelectronics. Nevertheless, the lack of a scalable thickness engineering strategy remains an obstacle to unleashing its full potential. Te-based electronics with logic functions are also less explored. Herein, we propose a novel wet-chemical thinning method for 2D Te, with the merits of scalability and site-specific thickness patterning capability. A polarity-switchable van der Waals (vdW) heterodiode with a high rectification ratio of 2.4 × 103 is realized on the basis of Te/WSe2. The electronic application of this unique characteristic is demonstrated by fabricating a logic half-wave rectifier, in which the rectifying states are switchable via electrostatic gating control. Besides, the narrow band gap of Te endows the device with a broad spectral response from visible to short-wave infrared. The room-temperature responsivity reaches 5.2 A W-1 at the telecom wavelength of 1.55 μm, with an external quantum efficiency of 420% and detectivity of 6.8 × 109 Jones. In particular, owing to the intrinsic in-plane anisotropy of Te, the device exhibits a favorable photocurrent anisotropic ratio of ∼3. Our study demonstrates the enormous potential of Te for novel electronics, promoting the development of elemental 2D materials.
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Affiliation(s)
- Juanjuan Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Dingwen Cao
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Fangfang Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Yong Yan
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Junli Du
- State Grid Henan Electric Power Research Institute, Zhengzhou, Henan 450052, People's Republic of China
| | - Jinke Yang
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Yongtao Tian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
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Yin Y, Ling J, Wang L, Zhou W, Peng Y, Zhou Y, Tang D. Competition of Photo-Excitation and Photo-Desorption Induced Positive and Negative Photoconductivity Switch in Te Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3747. [PMID: 36364522 PMCID: PMC9656629 DOI: 10.3390/nano12213747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Revised: 10/13/2022] [Accepted: 10/21/2022] [Indexed: 06/16/2023]
Abstract
The photocurrent in tellurium nanowire (Te NW) exhibits a subtle influence by many extrinsic factors. Herein, we fabricate Te NW devices and explore their photoresponse properties in detail. It is observed that the current increases greatly at low environmental relative humidity (RH) under light illumination, demonstrating an evident positive photoconductivity (PPC). However, the photocurrent reduces at high RH, yielding a typical negative photoconductivity (NPC). In addition, when exposed to a proper relative humidity, Te NW devices show PPC immediately and then transfer to NPC gradually under illumination, exhibiting the RH sensitive PPC/NPC switch. It is proposed that the competition between photo-excitation and photo-desorption is responsible for this subtle switch of PPC/NPC. On the one hand, the adsorbed water molecules on the surface of Te nanowires, acting as electron acceptors, lead to an increase of conductance, exhibiting the PPC phenomenon. On the other hand, the photo-desorption of water molecules from the surface results in a decreased carrier concentration in the Te nanowires, yielding the NPC phenomenon. The in-depth understanding of such charge transfer processes between the absorbed water molecules and Te nanowires provides an effective route to modulate the carrier densities and control the PPC/NPC switch, which will accelerate the design and application of novel optoelectronic nanodevices.
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33
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Cao X, Lei Z, Zhao S, Tao L, Zheng Z, Feng X, Li J, Zhao Y. Te/SnS 2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties. NANOSCALE ADVANCES 2022; 4:4296-4303. [PMID: 36321139 PMCID: PMC9552753 DOI: 10.1039/d2na00507g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 08/28/2022] [Indexed: 06/16/2023]
Abstract
The tunneling heterojunctions made of two-dimensional (2D) materials have been explored to have many intriguing properties, such as ultrahigh rectification and on/off ratio, superior photoresponsivity, and improved photoresponse speed, showing great potential in achieving multifunctional and high-performance electronic and optoelectronic devices. Here, we report a systematic study of the tunneling heterojunctions consisting of 2D tellurium (Te) and Tin disulfide (SnS2). The Te/SnS2 heterojunctions possess type-II band alignment and can transfer to type-III one under reverse bias, showing a reverse rectification ratio of about 5000 and a current on/off ratio over 104. The tunneling heterojunctions as photodetectors exhibit an ultrahigh photoresponsivity of 50.5 A W-1 in the visible range, along with a dramatically enhanced photoresponse speed. Furthermore, due to the reasonable type-II band alignment and negligible band bending at the interface, Te/SnS2 heterojunctions at zero bias exhibit excellent self-powered performance with a high responsivity of 2.21 A W-1 and external quantum efficiency of 678%. The proposed heterostructure in this work provides a useful guideline for the rational design of a high-performance self-powered photodetector.
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Affiliation(s)
- Xuanhao Cao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zehong Lei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Shuting Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Lili Tao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Xing Feng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Jingbo Li
- Guangdong Key Lab of Chip and Integration Technology, Institute of Semiconductors, South China Normal University Guangzhou 510631 P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
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Khan K, Tareen AK, Iqbal M, Zhang Y, Mahmood A, Mahmood N, Yin J, Khatoon R, Zhang H. Recent advance in MXenes: New horizons in electrocatalysis and environmental remediation technologies. PROG SOLID STATE CH 2022. [DOI: 10.1016/j.progsolidstchem.2022.100370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/14/2022]
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35
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Li W, Li H, Khan K, Liu X, Wang H, Lin Y, Zhang L, Tareen AK, Wageh S, Al-Ghamdi AA, Teng D, Zhang H, Shi Z. Infrared Light Emission Devices Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12172996. [PMID: 36080035 PMCID: PMC9457538 DOI: 10.3390/nano12172996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/18/2022] [Accepted: 08/28/2022] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.
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Affiliation(s)
- Wenyi Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Karim Khan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, China
| | - Xiaosong Liu
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Wang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Yanping Lin
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Lishang Zhang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Ayesha Khan Tareen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - S. Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed A. Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Daoxiang Teng
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
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36
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Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends. NANOMATERIALS 2022; 12:nano12132260. [PMID: 35808105 PMCID: PMC9268368 DOI: 10.3390/nano12132260] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Revised: 06/22/2022] [Accepted: 06/23/2022] [Indexed: 01/27/2023]
Abstract
Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.
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37
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Shi Z, Zhang H, Khan K, Cao R, Zhang Y, Ma C, Tareen AK, Jiang Y, Jin M, Zhang H. Two-dimensional materials toward Terahertz optoelectronic device applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C: PHOTOCHEMISTRY REVIEWS 2022. [DOI: 10.1016/j.jphotochemrev.2021.100473] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
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38
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Bhui A, Roychowdhury S, Sen A, Waghmare UV, Biswas K. Free‐Standing Few‐Layer Tellurene Nanosheets: Simple Solution‐Phase Synthesis and Electronic Structure. Z Anorg Allg Chem 2022. [DOI: 10.1002/zaac.202200097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Animesh Bhui
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | | | - Arpita Sen
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | - Umesh V Waghmare
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | - Kanishka Biswas
- Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) New Chemistry Unit INDIA
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Yan Z, Yang H, Yang Z, Ji C, Zhang G, Tu Y, Du G, Cai S, Lin S. Emerging Two-Dimensional Tellurene and Tellurides for Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200016. [PMID: 35244332 DOI: 10.1002/smll.202200016] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 01/30/2022] [Indexed: 06/14/2023]
Abstract
As with all stylish 2D functional materials, tellurene and tellurides possessing excellent physical and chemical properties such as high environmental stability, tunable narrow bandgap, and lower thermal conductivity, have aroused the great interest of the researchers. These properties of such materials also form the basis for relatively newfangled scholarly fields involving advanced topics, especially for broadband photodetectors. Integrating the excellent properties of many 2D materials, tellurene/telluride-based photodetectors show great flexibility, higher frequency response or faster time response, high signal-to-noise ratio, and so on, which make them leading the frontier of photodetector research. To fully understand the excellent properties of tellurene/tellurides and their optoelectronic applications, the recent advances in tellurene/telluride-based photodetectors are maximally summarized. Benefiting from the solid research in this field, the challenges and opportunities of tellurene/tellurides for future optoelectronic applications are also discussed in this review, which might provide possibilities for the realization of state-of-the-art high-performance tellurene/telluride-based devices.
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Affiliation(s)
- Zihan Yan
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Hao Yang
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Zhuo Yang
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Chengao Ji
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yusong Tu
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Guangyu Du
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon, 999077, Hong Kong
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon, 999077, Hong Kong
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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Yang P, Zha J, Gao G, Zheng L, Huang H, Xia Y, Xu S, Xiong T, Zhang Z, Yang Z, Chen Y, Ki DK, Liou JJ, Liao W, Tan C. Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility. NANO-MICRO LETTERS 2022; 14:109. [PMID: 35441245 PMCID: PMC9018950 DOI: 10.1007/s40820-022-00852-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2022] [Accepted: 03/24/2022] [Indexed: 05/15/2023]
Abstract
The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V-1 s-1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .
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Affiliation(s)
- Peng Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Jiajia Zha
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China.
| | - Guoyun Gao
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, People's Republic of China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Songcen Xu
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Tengfei Xiong
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Dong-Keun Ki
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, People's Republic of China
| | - Juin J Liou
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Wugang Liao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China.
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, People's Republic of China.
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Song Z, Liu T, Lai H, Meng X, Yang L, Su J, Chen T. A Universally EDTA-Assisted Synthesis of Polytypic Bismuth Telluride Nanoplates with a Size-Dependent Enhancement of Tumor Radiosensitivity and Metabolism In Vivo. ACS NANO 2022; 16:4379-4396. [PMID: 35175721 DOI: 10.1021/acsnano.1c10663] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Bismuth telluride (Bi2Te3) is an available thermoelectric material with the lowest band gap among bismuth chalcogenides, revealing a broad application in photocatalysis. Unfortunately, its size and morphology related to a radio-catalysis property have rarely been explored. Herein, an ethylenediaminetetraacetic acid (EDTA)-assisted hydrothermal strategy was introduced to synthesize polytypic Bi2Te3 nanoplates (BT NPs) that exhibit size-dependent radio-sensitization and metabolism characteristics in vivo. By simply varying the molar ratio of EDTA/Bi3+ during the reaction, BT NPs with different sizes and morphologies were obtained. EDTA acting as chelating agent and "capping" agent contributed to the homogeneous growth of BT NPs by eliminating dangling bonds and reducing the surface energy of different facets. Further analyzing the size-dependent radio-sensitization mechanism, larger-sized BT NPs generated holes that preferentially catalyzed the conversion of OH- to ·OH when irradiated with X-rays, while the smaller-sized BT NPs exhibited faster decay kinetics producing higher 1O2 levels to enhance radiotherapy effects. A metabolomic analysis revealed that larger-sized BT NPs were oxidized into Bi(Ox) in the liver via a citrate cycle pathway, whereas smaller-sized BT NPs accumulated in the kidney and were excreted in urine in the form of ions by regulating the metabolism of glutamate. In a cervical cancer model, BT NPs combined with X-ray irradiation significantly antagonized tumor suppression through the promotion of apoptosis in tumor cells. Consequently, in addition to providing a prospect of BT NPs as an efficient radio-sensitizer to boost the tumor radiosensitivity, we put forth a strategy that can be universally applied in synthesizing metal chalcogenides for catalysis-promoted radiotherapy.
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Affiliation(s)
- Zhenhuan Song
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Ting Liu
- Zhuhai Precision Medical Center, Guangdong Provincial Key Laboratory of Tumor Interventional Diagnosis and Treatment, Zhuhai People's Hospital, Zhuhai Hospital Affiliated with Jinan University, Jinan University, Zhuhai 519000, Guangdong, P. R. China
- College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications, Jinan University, Guangzhou 510632, P. R. China
| | - Haoqiang Lai
- Zhuhai Precision Medical Center, Guangdong Provincial Key Laboratory of Tumor Interventional Diagnosis and Treatment, Zhuhai People's Hospital, Zhuhai Hospital Affiliated with Jinan University, Jinan University, Zhuhai 519000, Guangdong, P. R. China
- College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications, Jinan University, Guangzhou 510632, P. R. China
| | - Xiaofeng Meng
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Liu Yang
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Jianyu Su
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Tianfeng Chen
- Zhuhai Precision Medical Center, Guangdong Provincial Key Laboratory of Tumor Interventional Diagnosis and Treatment, Zhuhai People's Hospital, Zhuhai Hospital Affiliated with Jinan University, Jinan University, Zhuhai 519000, Guangdong, P. R. China
- College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications, Jinan University, Guangzhou 510632, P. R. China
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42
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Tsai HS, Wang Y, Liu C, Wang T, Huo M. The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection. JOURNAL OF HAZARDOUS MATERIALS 2022; 423:127148. [PMID: 34537634 DOI: 10.1016/j.jhazmat.2021.127148] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 08/23/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
The intrinsic and electronic properties of elemental two-dimensional (2D) materials beyond graphene are first introduced in this review. Then the studies concerning the application of gas sensing using these 2D materials are comprehensively reviewed. On the whole, the carbon-, nitrogen-, and sulfur-based gases could be effectively detected by using most of them. For the sensing of organic vapors, the borophene, phosphorene, and arsenene may perform it well. Moreover, the G-series nerve agents might be efficiently monitored by the bismuthene. So far, there is still challenge on the material preparation due to the instability of these 2D materials under atmosphere. The synthesis or growth of materials integrated with the technique of surface protection should be associated with the device fabrication to establish a complete process for particular application. This review provides a complete and methodical guideline for scientists to further research and develop the hazardous gas sensors of these 2D materials in order to achieve the purpose of environmental protection.
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Affiliation(s)
- Hsu-Sheng Tsai
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China; School of Physics, Harbin Institute of Technology, 150001 Harbin, China.
| | - You Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, 150001 Harbin, China
| | - Chaoming Liu
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China; School of Materials Science and Engineering, Harbin Institute of Technology, 150001 Harbin, China
| | - Tianqi Wang
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China
| | - Mingxue Huo
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China
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43
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Zhao X, Shi J, Yin Q, Dong Z, Zhang Y, Kang L, Yu Q, Chen C, Li J, Liu X, Zhang K. Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy. iScience 2022; 25:103594. [PMID: 35005543 PMCID: PMC8718972 DOI: 10.1016/j.isci.2021.103594] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 11/10/2021] [Accepted: 12/03/2021] [Indexed: 11/25/2022] Open
Abstract
Recently, as an elementary material, tellurium (Te) has received widespread attention for its high carrier mobility, intriguing topological properties, and excellent environmental stability. However, it is difficult to obtain two-dimensional (2D) Te with high crystalline quality owing to its intrinsic helical chain structure. Herein, a facile strategy for controllable synthesis of high-quality 2D Te nanoflakes through chemical vapor transport in one step is reported. With carefully tuning the growth kinetics determined mainly by temperature, tellurium nanoflakes in lateral size of up to ∼40 μm with high crystallinity can be achieved. We also investigated the second harmonic generation of Te nanoflakes, which demonstrates that it can be used as frequency doubling crystals and has potential applications in nonlinear optical devices. In addition, field effect transistor devices based on the 2D Te nanoflakes were fabricated and exhibited excellent electrical properties with high mobility of 379 cm2 V−1 s−1. High-quality 2D Te nanoflakes were directly synthesized by CVT method The growth mechanisms of 2D Te nanoflakes were systematically studied 2D Te nanoflakes have potential applications in nonlinear optical devices 2D Te nanoflakes-based FETs exhibit high mobility of ∼379 cm2 V−1 s−1
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Affiliation(s)
- Xinxin Zhao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qin Yin
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Zhuo Dong
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yan Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Lixing Kang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Cheng Chen
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Corresponding author
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- Corresponding author
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Corresponding author
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Xu H, Kim T, Han H, Kim MJ, Hur JS, Choi CH, Chang JH, Jeong JK. High-Performance Broadband Phototransistor Based on TeO x/IGTO Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3008-3017. [PMID: 35000384 DOI: 10.1021/acsami.1c18576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultraviolet to infrared broadband spectral detection capability is a technological challenge for sensing materials being developed for high-performance photodetection. In this work, we stacked 9 nm-thick tellurium oxide (TeOx) and 8 nm-thick InGaSnO (IGTO) into a heterostructure at a low temperature of 150 °C. The superior photoelectric characteristics we achieved benefit from the intrinsic optical absorption range (300-1500 nm) of the hexagonal tellurium (Te) phase in the TeOx film, and photoinduced electrons are driven effectively by band alignment at the TeOx/IGTO interface under illumination. A photosensor based on our optimized heterostructure exhibited a remarkable detectivity of 1.6 × 1013 Jones, a responsivity of 84 A/W, and a photosensitivity of 1 × 105, along with an external quantum efficiency of 222% upon illumination by blue light (450 nm). Simultaneously, modest detection properties (responsivity: ∼31 A/W, detectivity: ∼6 × 1011 Jones) for infrared irradiation at 970 nm demonstrate that this heterostructure can be employed as a broadband phototransistor. Furthermore, its low-temperature processability suggests that our proposed concept might be used to design array optoelectronic devices for wide band detection with high sensitivity, flexibility, and stability.
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Affiliation(s)
- Hongwei Xu
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Taikyu Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - HeeSung Han
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Min Jae Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joon-Hyuk Chang
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
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Recent development in emerging phosphorene based novel materials: Progress, challenges, prospects and their fascinating sensing applications. PROG SOLID STATE CH 2021. [DOI: 10.1016/j.progsolidstchem.2021.100336] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Hess P. Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table. NANOSCALE HORIZONS 2021; 6:856-892. [PMID: 34494064 DOI: 10.1039/d1nh00113b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.
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Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, INF 253, University of Heidelberg, 69120 Heidelberg, Germany.
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Park DY, Yu HM, Jeong BG, An SJ, Kim SH, Jeong MS. Nano-Thermal Analysis of Defect-Induced Surface Pre-Melting in 2D Tellurium. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2735. [PMID: 34685174 PMCID: PMC8541556 DOI: 10.3390/nano11102735] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2021] [Revised: 10/06/2021] [Accepted: 10/12/2021] [Indexed: 01/18/2023]
Abstract
Thermal properties, such as thermal conductivity, heat capacity, and melting temperature, influence the efficiency and stability of two-dimensional (2D) material applications. However, existing studies on thermal characteristics-except for thermal conductivity-are insufficient for 2D materials. Here, we investigated the melting temperature of 2D Tellurium (2D Te) using the nano-thermal analysis technique and found anomalous behavior that occurs before the melting temperature is reached. The theoretical calculations present surface pre-melting in 2D Te and Raman scattering measurements suggest that defects in 2D Te accelerate surface pre-melting. Understanding the pre-melting surface characteristics of 2D Te will provide valuable information for practical applications.
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Affiliation(s)
- Dae Young Park
- Department of Physics, Hanyang University, Seoul 04763, Korea; (D.Y.P.); (S.-J.A.)
| | - Hyang Mi Yu
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea; (H.M.Y.); (B.G.J.); (S.H.K.)
| | - Byeong Geun Jeong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea; (H.M.Y.); (B.G.J.); (S.H.K.)
| | - Sung-Jin An
- Department of Physics, Hanyang University, Seoul 04763, Korea; (D.Y.P.); (S.-J.A.)
| | - Sung Hyuk Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea; (H.M.Y.); (B.G.J.); (S.H.K.)
| | - Mun Seok Jeong
- Department of Physics, Hanyang University, Seoul 04763, Korea; (D.Y.P.); (S.-J.A.)
- Department of Energy Engineering, Hanyang University, Seoul 04763, Korea
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48
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Gogoi HJ, Bajpai K, Mallajosyula AT, Solanki A. Advances in Flexible Memristors with Hybrid Perovskites. J Phys Chem Lett 2021; 12:8798-8825. [PMID: 34491743 DOI: 10.1021/acs.jpclett.1c02105] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.
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Affiliation(s)
- Himangshu Jyoti Gogoi
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Kunal Bajpai
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
| | - Arun Tej Mallajosyula
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Ankur Solanki
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
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49
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Khan K, Tareen AK, Iqbal M, Wang L, Ma C, Shi Z, Ye Z, Ahmad W, Rehman Sagar RU, Shams SS, Sophia PJ, Ullah Z, Xie Z, Guo Z, Zhang H. Navigating recent advances in monoelemental materials (Xenes)-fundamental to biomedical applications. PROG SOLID STATE CH 2021. [DOI: 10.1016/j.progsolidstchem.2021.100326] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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50
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Zhao C, Batiz H, Yasar B, Kim H, Ji W, Scott MC, Chrzan DC, Javey A. Tellurium Single-Crystal Arrays by Low-Temperature Evaporation and Crystallization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100860. [PMID: 34331332 DOI: 10.1002/adma.202100860] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2021] [Revised: 06/02/2021] [Indexed: 06/13/2023]
Abstract
Thermally evaporated tellurium possesses an intriguing crystallization behavior, where an amorphous to crystalline phase transition happens at near-ambient temperature. However, a comprehensive understanding and delicate control of the crystallization process for the evaporated Te films is lacking. Here, the kinetics and dynamics of the crystallization of thermally evaporated Te films is visualized and modeled. Low-temperature processing of highly crystalline tellurium films with large grain size and preferred out-of-plane orientation ((100) plane parallel to the surface) is demonstrated by controlling the crystallization process. Tellurium single crystals with a lateral dimension of up to 6 µm are realized on various substrates including glass and plastic. Field-effect transistors based on 5 °C crystallized Te single grains (6-nm-thick) exhibit an average effective hole mobility of ≈100 cm2 V-1 s-1 , and on/off current ratio of ≈3 × 104 .
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Affiliation(s)
- Chunsong Zhao
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Humberto Batiz
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Bengisu Yasar
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Hyungjin Kim
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Wenbo Ji
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Mary C Scott
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Daryl C Chrzan
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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