1
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Hu H. A corn leaf based-strain sensor and triboelectric nanogenerator for running monitoring and energy harvesting. Heliyon 2024; 10:e29025. [PMID: 38601652 PMCID: PMC11004563 DOI: 10.1016/j.heliyon.2024.e29025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 03/27/2024] [Accepted: 03/28/2024] [Indexed: 04/12/2024] Open
Abstract
Recently, advanced wearable devices with posture sensing and energy harvesting have received widespread attention. Thus, we proposed a dual-function device (energy harvesting and running posture sensing), including carbon attached corn leaf strain sensor (CC-strain sensor) and a corn leaf-based triboelectric nanogenerator (C-TENG).According to the results, the relative resistance rate (ΔR/R0) exhibits linear characteristics in the three strain regions, and its linear coefficients are all above 0.96. Besides, at low strain rates from 0.01% to 0.1%, the CC-strain sensor can reach high sensitivity for monitoring weak signals, such as expressions in dance performances. The C-TENG device can achieve mechanical energy harvesting, providing a way to power low-power portable devices. From the results, the maximum power of C-TENG can arrive at 222 μW (resistance: 100 MΩ). This research can provide a new path to integrate strain sensors and TENG devices in running monitoring.
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Affiliation(s)
- Huifang Hu
- Chengdu Sport University, Chengdu, Sichuan Province, 610041, China
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2
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Radatović B, Çakıroğlu O, Jadriško V, Frisenda R, Senkić A, Vujičić N, Kralj M, Petrović M, Castellanos-Gomez A. Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:15596-15604. [PMID: 38500411 PMCID: PMC10982932 DOI: 10.1021/acsami.4c00458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 03/03/2024] [Accepted: 03/05/2024] [Indexed: 03/20/2024]
Abstract
In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.
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Affiliation(s)
- Borna Radatović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Onur Çakıroğlu
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Valentino Jadriško
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Physics
Department, Politecnico di Milano, 20133 Milan, Italy
| | | | - Ana Senkić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Nataša Vujičić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marko Kralj
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marin Petrović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Andres Castellanos-Gomez
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
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3
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Zhu D, Duan S, Liu J, Diao S, Hong J, Xiang S, Wei X, Xiao P, Xia J, Lei W, Wang B, Shi Q, Wu J. A double-crack structure for bionic wearable strain sensors with ultra-high sensitivity and a wide sensing range. NANOSCALE 2024; 16:5409-5420. [PMID: 38380994 DOI: 10.1039/d3nr05476d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Flexible strain sensors are crucial in fully monitoring human motion, and they should have a wide sensing range and ultra-high sensitivity. Herein, inspired by lyriform organs, a flexible strain sensor based on the double-crack structure is designed. An MXene layer and an Au layer with cracks are constructed on both sides of the insulated polydimethylsiloxane (PDMS) film, forming an equivalent parallel circuit that guarantees the integrity of the conductive path under a large strain. The rapid disconnection of the crack junctions causes a significant change in the resistance value. Due to the effect of cracks on the conductive path, the sensitivity of the sensor is largely improved. Benefiting from the double-crack structure, the as-obtained sensor shows ultra-high sensitivity (maximum gauge factor of up to 14 373.6), a wide working range (up to 21%), a fast response time (183 ms) and excellent dynamical stability (almost no performance loss after 1000 stretching cycles and different frequency cycles). In practical applications, the sensor is applied to different parts of the human body to sense the deformation of the skin, demonstrating its great potential application value in human physiological detection and the human-machine interaction. This study can provide new ideas for preparing high-performance flexible strain sensors.
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Affiliation(s)
- Di Zhu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Shengshun Duan
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Jiachen Liu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Shanyan Diao
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Jianlong Hong
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Shengxin Xiang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Xiao Wei
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Peng Xiao
- State Grid Jiangsu Electric Power Co., Ltd, Research Institute, Nanjing, 211103, Jiangsu, P. R. China.
| | - Jun Xia
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Wei Lei
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Baoping Wang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Qiongfeng Shi
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
| | - Jun Wu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 210096, China.
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4
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Pyun KR, Kwon K, Yoo MJ, Kim KK, Gong D, Yeo WH, Han S, Ko SH. Machine-learned wearable sensors for real-time hand-motion recognition: toward practical applications. Natl Sci Rev 2024; 11:nwad298. [PMID: 38213520 PMCID: PMC10776364 DOI: 10.1093/nsr/nwad298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/23/2023] [Accepted: 11/01/2023] [Indexed: 01/13/2024] Open
Abstract
Soft electromechanical sensors have led to a new paradigm of electronic devices for novel motion-based wearable applications in our daily lives. However, the vast amount of random and unidentified signals generated by complex body motions has hindered the precise recognition and practical application of this technology. Recent advancements in artificial-intelligence technology have enabled significant strides in extracting features from massive and intricate data sets, thereby presenting a breakthrough in utilizing wearable sensors for practical applications. Beyond traditional machine-learning techniques for classifying simple gestures, advanced machine-learning algorithms have been developed to handle more complex and nuanced motion-based tasks with restricted training data sets. Machine-learning techniques have improved the ability to perceive, and thus machine-learned wearable soft sensors have enabled accurate and rapid human-gesture recognition, providing real-time feedback to users. This forms a crucial component of future wearable electronics, contributing to a robust human-machine interface. In this review, we provide a comprehensive summary covering materials, structures and machine-learning algorithms for hand-gesture recognition and possible practical applications through machine-learned wearable electromechanical sensors.
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Affiliation(s)
- Kyung Rok Pyun
- Department of Mechanical Engineering, Seoul National University, Seoul08826, South Korea
| | - Kangkyu Kwon
- Department of Mechanical Engineering, Seoul National University, Seoul08826, South Korea
- IEN Center for Human-Centric Interfaces and Engineering, Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA30332, USA
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA30332, USA
| | - Myung Jin Yoo
- Department of Mechanical Engineering, Seoul National University, Seoul08826, South Korea
| | - Kyun Kyu Kim
- Department of Chemical Engineering, Stanford University, Stanford, CA94305, USA
| | - Dohyeon Gong
- Department of Mechanical Engineering, Ajou University, Suwon-si16499, South Korea
| | - Woon-Hong Yeo
- IEN Center for Human-Centric Interfaces and Engineering, Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA30332, USA
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA30332, USA
| | - Seungyong Han
- Department of Mechanical Engineering, Ajou University, Suwon-si16499, South Korea
| | - Seung Hwan Ko
- Department of Mechanical Engineering, Seoul National University, Seoul08826, South Korea
- Institute of Advanced Machinery and Design (SNU-IAMD), Seoul National University, Seoul08826, South Korea
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5
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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6
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Zhou Y, Cheng B, Huang S, Huang X, Jiang R, Wang X, Zhang W, Jia B, Lu P, Song HZ. The Tunable Electronic and Optical Properties of Two-Dimensional Bismuth Oxyhalides. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2798. [PMID: 37887948 PMCID: PMC10609128 DOI: 10.3390/nano13202798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 10/05/2023] [Accepted: 10/17/2023] [Indexed: 10/28/2023]
Abstract
Two-dimensional (2D) bismuth oxyhalides (BiOX) have attracted much attention as potential optoelectronic materials. To explore their application diversity, we herewith systematically investigate the tunable properties of 2D BiOX using first-principles calculations. Their electronic and optical properties can be modulated by changing the number of monolayers, applying strain, and/or varying the halogen composition. The band gap shrinks monotonically and approaches the bulk value, the optical absorption coefficient increases, and the absorption spectrum redshifts as the layer number of 2D BiOX increases. The carrier transport property can be improved by applying tensile strain, and the ability of photocatalytic hydrogen evolution can be obtained by applying compressive strain. General strain engineering will be effective in linearly tuning the band gap of BiOX in a wide strain range. Strain, together with halogen composition variation, can tune the optical absorption spectrum to be on demand in the range from visible to ultraviolet. This suggests that 2D BiOX materials can potentially serve as tunable novel photodetectors, can be used to improve clean energy techniques, and have potential in the field of flexible optoelectronics.
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Affiliation(s)
- Yong Zhou
- Quantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
- School of Electronic Engineering, Chengdu Technological University, Chengdu 611730, China
| | - Beitong Cheng
- Quantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Shuai Huang
- Quantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Xingyong Huang
- Faculty of Science, Yibin University, Yibin 644007, China
| | - Ruomei Jiang
- Quantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Xule Wang
- Quantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Wei Zhang
- Quantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Baonan Jia
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Pengfei Lu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Hai-Zhi Song
- Quantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130013, China
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7
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Wang Z, Jing X, Duan S, Liu C, Kang D, Xu X, Chen J, Xia Y, Chang B, Zhao C, Zhu B, Xu T, Lin H, Lu W, Ren Y, Sun L, Wu J, Tao L. 2D PtSe 2 Enabled Wireless Wearable Gas Monitoring Circuits with Distinctive Strain-Enhanced Performance. ACS NANO 2023. [PMID: 37294879 DOI: 10.1021/acsnano.3c01582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The application of 2D materials-based flexible electronics in wearable scenarios is limited due to performance degradation under strain fields. In contrast to its negative role in existing transistors or sensors, herein, we discover a positive effect of strain to the ammonia detection in 2D PtSe2. Linear modulation of sensitivity is achieved in flexible 2D PtSe2 sensors via a customized probe station with an in situ strain loading apparatus. For trace ammonia absorption, a 300% enhancement in room-temperature sensitivity (31.67% ppm-1) and an ultralow limit of detection (50 ppb) are observed under 1/4 mm-1 curvature strain. We identify three types of strain-sensitive adsorption sites in layered PtSe2 and pinpoint that basal-plane lattice distortion contributes to better sensing performance resulting from reduced absorption energy and larger charge transfer density. Furthermore, we demonstrate state-of-the-art 2D PtSe2-based wireless wearable integrated circuits, which allow real-time gas sensing data acquisition, processing, and transmission through a Bluetooth module to user terminals. The circuits exhibit a wide detection range with a maximum sensitivity value of 0.026 V·ppm-1 and a low energy consumption below 2 mW.
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Affiliation(s)
- Zhehan Wang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Xu Jing
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Shengshun Duan
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Chang Liu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Dingxuan Kang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Xiao Xu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Jiayi Chen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Yier Xia
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Bo Chang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Chengdong Zhao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Beibei Zhu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
| | - Huiwen Lin
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Weibing Lu
- Center for Flexible RF Technology, Southeast University, Nanjing 211189, China
| | - Yuan Ren
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
| | - Jun Wu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Li Tao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
- Center for Flexible RF Technology, Southeast University, Nanjing 211189, China
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8
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Vijay K, Vavilapalli DS, Arya A, Srivastava SK, Singh R, Sagdeo A, Jha SN, Kumar K, Banik S. Magneto-strain effects in 2D ferromagnetic van der Waal material CrGeTe[Formula: see text]. Sci Rep 2023; 13:8579. [PMID: 37237016 PMCID: PMC10219987 DOI: 10.1038/s41598-023-35038-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 05/11/2023] [Indexed: 05/28/2023] Open
Abstract
The idea of strain based manipulation of spins in magnetic two-dimensional (2D) van der Waal (vdW) materials leads to the development of new generation spintronic devices. Magneto-strain arises in these materials due to the thermal fluctuations and magnetic interactions which influences both the lattice dynamics and the electronic bands. Here, we report the mechanism of magneto-strain effects in a vdW material CrGeTe[Formula: see text] across the ferromagnetic (FM) transition. We find an isostructural transition in CrGeTe[Formula: see text] across the FM ordering with first order type lattice modulation. Larger in-plane lattice contraction than out-of-plane give rise to magnetocrystalline anisotropy. The signature of magneto-strain effects in the electronic structure are shift of the bands away from the Fermi level, band broadening and the twinned bands in the FM phase. We find that the in-plane lattice contraction increases the on-site Coulomb correlation ([Formula: see text]) between Cr atoms resulting in the band shift. Out-of-plane lattice contraction enhances the [Formula: see text] hybridization between Cr-Ge and Cr-Te atoms which lead to band broadening and strong spin-orbit coupling (SOC) in FM phase. The interplay between [Formula: see text] and SOC out-of-plane gives rise to the twinned bands associated with the interlayer interactions while the in-plane interactions gives rise to the 2D spin polarized states in the FM phase.
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Affiliation(s)
- Kritika Vijay
- Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Durga Sankar Vavilapalli
- Materials Design Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, 581 83 Linköping, Sweden
| | - Ashok Arya
- Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai, 400085 India
| | - S. K. Srivastava
- Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India
| | - Rashmi Singh
- Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India
| | - Archna Sagdeo
- Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - S. N. Jha
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
- Beamline Development and Application Section, Bhabha Atomic Research Centre, Mumbai, 400085 India
| | - Kranti Kumar
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001 India
| | - Soma Banik
- Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
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9
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Xu W, Shu Y, Xu M, Xie J, Li Y, Dong H. Unexpected electro-catalytic activity of the CO reduction reaction on Cr-embedded poly-phthalocyanine realized by strain engineering: a computational study. Phys Chem Chem Phys 2023; 25:12872-12881. [PMID: 37165891 DOI: 10.1039/d3cp00861d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The electrochemical conversion of carbon monoxide (CO) into value-added products is highly promising for carbon utilization and CO removal. Based on previous theoretical studies, we computationally explored the effect of strain engineering on electrocatalysis of the CO reduction reaction (CORR) by two-dimensional (2D) transition metal embedded polyphthalocyanines (MPPcs). By calculating the adsorption energy of CO and the free energies of key intermediates on the MPPcs under uniaxial and biaxial strains, it was revealed that only CrPPc under biaxial strain has the potential to exhibit significant enhancement of the catalytic performance. The free energy diagrams of the CORR catalyzed by CrPPc were plotted under specific biaxial strains, where both the optimal reaction pathway and rate-determining step are found to be evidently changed. What's more, the 5% compressive strain imposed on CrPPc results in an ultra-low limiting potential (UL = -0.09 V) with high selectivity on CH4 as the final product, indicating unexpected electro-catalytic activity. Our study clearly elucidates that moderate strain could greatly enhance the electrocatalytic performance of 2D materials in the CORR.
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Affiliation(s)
- Wenzhen Xu
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, China.
- College of Materials Science and Engineering, Xi'an Shiyou University, Xi'an, Shaanxi 710065, China
| | - Yunpeng Shu
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, China.
| | - Mengmeng Xu
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, China.
| | - Juan Xie
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, China.
| | - Youyong Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China.
| | - Huilong Dong
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, China.
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University, Tianjin 300071, China
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10
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Zhu S, Kim D, Jeong C. Recent Development of Mechanical Stimuli Detectable Sensors, Their Future, and Challenges: A Review. SENSORS (BASEL, SWITZERLAND) 2023; 23:s23094300. [PMID: 37177505 PMCID: PMC10181258 DOI: 10.3390/s23094300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2022] [Revised: 12/30/2022] [Accepted: 04/21/2023] [Indexed: 05/15/2023]
Abstract
By virtue of their wide applications in transportation, healthcare, smart home, and security, development of sensors detecting mechanical stimuli, which are many force types (pressure, shear, bending, tensile, and flexure) is an attractive research direction for promoting the advancement of science and technology. Sensing capabilities of various force types based on structural design, which combine unique structure and materials, have emerged as a highly promising field due to their various industrial applications in wearable devices, artificial skin, and Internet of Things (IoT). In this review, we focus on various sensors detecting one or two mechanical stimuli and their structure, materials, and applications. In addition, for multiforce sensing, sensing mechanism are discussed regarding responses in external stimuli such as piezoresistive, piezoelectric, and capacitance phenomena. Lastly, the prospects and challenges of sensors for multiforce sensing are discussed and summarized, along with research that has emerged.
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Affiliation(s)
- Shushuai Zhu
- School of Mechanical Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan 38541, Republic of Korea
| | - Dana Kim
- School of Mechanical Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan 38541, Republic of Korea
| | - Changyoon Jeong
- School of Mechanical Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan 38541, Republic of Korea
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11
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Li B, Xie Z, Liu H, Tang L, Chen K. A Review of Ultrathin Piezoelectric Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:3107. [PMID: 37109944 PMCID: PMC10144961 DOI: 10.3390/ma16083107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/11/2023] [Accepted: 04/13/2023] [Indexed: 06/19/2023]
Abstract
Due to their high electromechanical coupling and energy density properties, ultrathin piezoelectric films have recently been intensively studied as key materials for the construction of miniaturized energy transducers, and in this paper we summarize the research progress. At the nanoscale, even a few atomic layers, ultrathin piezoelectric films have prominent shape anisotropic polarization, that is, in-plane polarization and out-of-plane polarization. In this review, we first introduce the in-plane and out-of-plane polarization mechanism, and then summarize the main ultrathin piezoelectric films studied at present. Secondly, we take perovskite, transition metal dichalcogenides, and Janus layers as examples to elaborate the existing scientific and engineering problems in the research of polarization, and their possible solutions. Finally, the application prospect of ultrathin piezoelectric films in miniaturized energy converters is summarized.
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12
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Zhang Y, Ouyang T, He C, Li J, Tang C. Extremely promising monolayer materials with robust ferroelectricity and extraordinary piezoelectricity: δ-AsN, δ-SbN, and δ-BiN. NANOSCALE 2023; 15:6363-6370. [PMID: 36916710 DOI: 10.1039/d2nr05344f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Low-dimensional ferroelectric materials, the mainstay of current high-density non-volatile memory devices, sensors, and nanoscale electronics, have attracted tremendous attention recently. Through employing an evolutionary algorithm and first-principles calculations, we report three novel and stable two-dimensional (2D) ferroelectric materials δ-AsN, δ-SbN, and δ-BiN with spontaneous polarization of up to 5.72 × 10-10, 5.20 × 10-10, and 4.45 × 10-10 C m-1, respectively. The ab initio molecular dynamics (AIMD) simulations further show that the failure temperature of ferroelectricity of δ-AsN, δ-SbN, and δ-BiN is as high as 2000 K, 2000 K, and 1700 K, demonstrating their strong robustness. More interestingly, the three novel materials also exhibit extraordinary piezoelectricity with relaxation ion piezoelectric coefficients d11 of 5.39, 19.55, and 43.87 pm V-1, respectively. The external strain effect found can effectively modulate their spontaneous polarization, ferroelectric switching energy barrier, and piezoelectric properties. These fascinating ferroelectricity and piezoelectricity features endow δ-AsN, δ-SbN, and δ-BiN with significant potential application in future miniaturized and integrated multi-functional electronic devices.
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Affiliation(s)
- Yuwen Zhang
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
- Hunan Key Laboratory for Micro-nano Energy Materials and Devices, Xiangtan University, Hunan 411105, China
| | - Tao Ouyang
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
- Hunan Key Laboratory for Micro-nano Energy Materials and Devices, Xiangtan University, Hunan 411105, China
| | - Chaoyu He
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
- Hunan Key Laboratory for Micro-nano Energy Materials and Devices, Xiangtan University, Hunan 411105, China
| | - Jin Li
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
- Hunan Key Laboratory for Micro-nano Energy Materials and Devices, Xiangtan University, Hunan 411105, China
| | - Chao Tang
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
- Hunan Key Laboratory for Micro-nano Energy Materials and Devices, Xiangtan University, Hunan 411105, China
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13
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Chang K, Wu Z, Meng J, Guo M, Yan XP, Qian HL, Ma P, Zhao J, Wang F, Huang Y, Liu T. Cicada-Wing-Inspired Highly Sensitive Tactile Sensors Based on Elastic Carbon Foam with Nanotextured Surfaces. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15976-15985. [PMID: 36917498 DOI: 10.1021/acsami.2c22204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Electronic devices with tactile and pressure-sensing capabilities are becoming increasingly popular in the automatic industry, human motion/health monitoring, and artificial intelligence applications. Inspired by the natural nanotopography of the cicada wing, we propose here a straightforward strategy to fabricate a highly sensitive tactile sensor through nanotexturing of erected polyaniline (PANI) nanoneedles on a conductive and elastic three-dimensional (3D) carbon skeleton. The robust and compressible carbon networks offer a resilient and conducting matrix to catering complex scenarios; the biomimetic PANI nanoneedles firmly and densely anchored on a 3D carbon skeleton provide intimate electrical contact under subtle deformation. As a result, a piezoresistive tactile sensor with ultrahigh sensitivity (33.52 kPa-1), fast response/recovery abilities (97/111 ms), and reproducible sensing performance (2500 cycles) is developed, which is capable of distinguishing motions in a wide pressure range from 4.66 Pa to 60 kPa, detecting spatial pressure distribution, and monitoring various gestures in a wireless manner. These excellent performances demonstrate the great potential of nature-inspired tactile sensors for practical human motion monitoring and artificial intelligence applications.
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Affiliation(s)
- Kangqi Chang
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
| | - Zhenzhong Wu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
| | - Jian Meng
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
| | - Minhao Guo
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
| | - Xiu-Ping Yan
- School of Food Science and Technology, Jiangnan University, Wuxi 214122, China
| | - Hai-Long Qian
- School of Food Science and Technology, Jiangnan University, Wuxi 214122, China
| | - Piming Ma
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
| | - Jianhua Zhao
- Jiangsu Huaxicun Co. Ltd., Jiangyin, 214420, China
| | | | - Yunpeng Huang
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
| | - Tianxi Liu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
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14
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Wang Y, Adam ML, Zhao Y, Zheng W, Gao L, Yin Z, Zhao H. Machine Learning-Enhanced Flexible Mechanical Sensing. NANO-MICRO LETTERS 2023; 15:55. [PMID: 36800133 PMCID: PMC9936950 DOI: 10.1007/s40820-023-01013-9] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 01/08/2023] [Indexed: 05/31/2023]
Abstract
To realize a hyperconnected smart society with high productivity, advances in flexible sensing technology are highly needed. Nowadays, flexible sensing technology has witnessed improvements in both the hardware performances of sensor devices and the data processing capabilities of the device's software. Significant research efforts have been devoted to improving materials, sensing mechanism, and configurations of flexible sensing systems in a quest to fulfill the requirements of future technology. Meanwhile, advanced data analysis methods are being developed to extract useful information from increasingly complicated data collected by a single sensor or network of sensors. Machine learning (ML) as an important branch of artificial intelligence can efficiently handle such complex data, which can be multi-dimensional and multi-faceted, thus providing a powerful tool for easy interpretation of sensing data. In this review, the fundamental working mechanisms and common types of flexible mechanical sensors are firstly presented. Then how ML-assisted data interpretation improves the applications of flexible mechanical sensors and other closely-related sensors in various areas is elaborated, which includes health monitoring, human-machine interfaces, object/surface recognition, pressure prediction, and human posture/motion identification. Finally, the advantages, challenges, and future perspectives associated with the fusion of flexible mechanical sensing technology and ML algorithms are discussed. These will give significant insights to enable the advancement of next-generation artificial flexible mechanical sensing.
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Affiliation(s)
- Yuejiao Wang
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Mukhtar Lawan Adam
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Yunlong Zhao
- Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen, 361102, People's Republic of China
| | - Weihao Zheng
- School of Mechano-Electronic Engineering, Xidian University, Xi'an , 710071, People's Republic of China
| | - Libo Gao
- Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen, 361102, People's Republic of China.
| | - Zongyou Yin
- Research School of Chemistry, Australian National University, Canberra, ACT, 2601, Australia.
| | - Haitao Zhao
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China.
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15
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Ye Z, Tan C, Huang X, Ouyang Y, Yang L, Wang Z, Dong M. Emerging MoS 2 Wafer-Scale Technique for Integrated Circuits. NANO-MICRO LETTERS 2023; 15:38. [PMID: 36652150 PMCID: PMC9849648 DOI: 10.1007/s40820-022-01010-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
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Affiliation(s)
- Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Xiaolei Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Yi Ouyang
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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16
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Chen Y, Tian Z, Wang X, Ran N, Wang C, Cui A, Lu H, Zhang M, Xue Z, Mei Y, Chu PK, Liu J, Hu Z, Di Z. 2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201630. [PMID: 35589374 DOI: 10.1002/adma.202201630] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2022] [Revised: 05/15/2022] [Indexed: 06/15/2023]
Abstract
Piezoelectricity in 2D transition metal dichalcogenides (TMDs) has attracted considerable interest because of their excellent flexibility and high piezoelectric coefficient compared to conventional piezoelectric bulk materials. However, the ability to regulate the piezoelectric properties is limited because the entropy is constant for certain binary TMDs other than multielement ones. Herein, in order to increase the entropy, a ternary TMDs alloy, Mo1- x Wx S2 , with different W concentrations, is synthesized. The W concentration in the Mo1- x Wx S2 alloy can be controlled precisely in the low-supersaturation synthesis and the entropy can be tuned accordingly. The Mo0.46 W0.54 S2 alloy (x = 0.54) has the highest configurational entropy and best piezoelectric properties, such as a piezoelectric coefficient of 4.22 pm V-1 and a piezoelectric output current of 150 pA at 0.24% strain. More importantly, it can be combined into a larger package to increase the output current to 600 pA to cater to self-powered applications. Combining with excellent mechanical durability, a mechanical sensor based on the Mo0.46 W0.54 S2 alloy is demonstrated for real-time health monitoring.
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Affiliation(s)
- Yulong Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Ziao Tian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Nian Ran
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Chen Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Huihui Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Miao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yongfeng Mei
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Jianjun Liu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
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17
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Chen Y, Wang Y, Shen W, Wu M, Li B, Zhang Q, Liu S, Hu C, Yang S, Gao Y, Jiang C. Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS 2/Graphene Heterojunction Bubbles. ACS NANO 2022; 16:16271-16280. [PMID: 36205574 DOI: 10.1021/acsnano.2c05272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) material bubbles, as a straightforward method to induce strain, represent a potentially powerful platform for the modulation of different properties of 2D materials and the exploration of their strain-related applications. Here, we prepare ReS2/graphene heterojunction bubbles (ReS2/gr heterobubbles) and investigate their strain and interference synergistically modulated optical and electrical properties. We perform Raman and photoluminescence (PL) spectra to verify the continuously varying strain and the microcavity induced optical interference in ReS2/gr heterobubbles. Kelvin probe force microscopy (KPFM) is carried out to explore the photogenerated carrier transfer behavior in both strained ReS2/gr heterobubbles and ReS2/gr interfaces, as well as the oscillation of surface potential caused by optical interference under illumination conditions. Moreover, the switching of in-plane crystal orientation and the modulation of optical anisotropy of ReS2/gr heterobubbles are observed by azimuth-dependent reflectance difference microscopy (ADRDM), which can be attributed to the action of both strain effect and interference. Our study proves that the optical and electrical properties can be effectively modulated by the synergistical effect of strain and interference in a 2D material bubble.
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Affiliation(s)
- Yujia Chen
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
| | - Yunkun Wang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN300072, Tianjin, P. R. China
| | - Minghui Wu
- College of Materials and Chemical Engineering, Minjiang University, Fuzhou350108, P. R. China
| | - Bin Li
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN300072, Tianjin, P. R. China
| | - Qu Zhang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Shuai Liu
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN300072, Tianjin, P. R. China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
| | - Yunan Gao
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
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18
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Vimala A, Vandrangi SK. Development of porous materials based resistance pressure sensors and their biomedical applications: a review. INT J POLYM MATER PO 2022. [DOI: 10.1080/00914037.2022.2118275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/14/2022]
Affiliation(s)
- Allam Vimala
- Department of Physics, School of Advanced Sciences, Vellore Institute of Technology, Vellore, Tamil Nadu, India
| | - Suresh Kumar Vandrangi
- Department of Physics, School of Advanced Sciences, Vellore Institute of Technology, Vellore, Tamil Nadu, India
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19
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Corletto A, Ellis AV, Shepelin NA, Fronzi M, Winkler DA, Shapter JG, Sherrell PC. Energy Interplay in Materials: Unlocking Next-Generation Synchronous Multisource Energy Conversion with Layered 2D Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203849. [PMID: 35918607 DOI: 10.1002/adma.202203849] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 06/06/2022] [Indexed: 06/15/2023]
Abstract
Layered 2D crystals have unique properties and rich chemical and electronic diversity, with over 6000 2D crystals known and, in principle, millions of different stacked hybrid 2D crystals accessible. This diversity provides unique combinations of properties that can profoundly affect the future of energy conversion and harvesting devices. Notably, this includes catalysts, photovoltaics, superconductors, solar-fuel generators, and piezoelectric devices that will receive broad commercial uptake in the near future. However, the unique properties of layered 2D crystals are not limited to individual applications and they can achieve exceptional performance in multiple energy conversion applications synchronously. This synchronous multisource energy conversion (SMEC) has yet to be fully realized but offers a real game-changer in how devices will be produced and utilized in the future. This perspective highlights the energy interplay in materials and its impact on energy conversion, how SMEC devices can be realized, particularly through layered 2D crystals, and provides a vision of the future of effective environmental energy harvesting devices with layered 2D crystals.
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Affiliation(s)
- Alexander Corletto
- Department of Chemical Engineering, The University of Melbourne, Grattan Street, Parkville, Victoria, 3010, Australia
| | - Amanda V Ellis
- Department of Chemical Engineering, The University of Melbourne, Grattan Street, Parkville, Victoria, 3010, Australia
| | - Nick A Shepelin
- Laboratory for Multiscale Materials Experiments, Paul Scherrer Institute, Forschungsstrasse 111, Villigen, CH-5232, Switzerland
| | - Marco Fronzi
- School of Mathematical and Physical Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - David A Winkler
- Monash Institute of Pharmaceutical Sciences, Monash University, 381 Royal Parade, Parkville, Victoria, 3052, Australia
- School of Biochemistry and Chemistry, La Trobe Institute for Molecular Science, La Trobe University, Kingsbury Drive, Bundoora, Victoria, 3086, Australia
- School of Pharmacy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Joseph G Shapter
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Grattan Street, Parkville, Victoria, 3010, Australia
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20
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Liu L, Ni Y, Mao J, Li S, Ng KH, Chen Z, Huang J, Cai W, Lai Y. Flexible and Highly Conductive Textiles Induced by Click Chemistry for Sensitive Motion and Humidity Monitoring. ACS APPLIED MATERIALS & INTERFACES 2022; 14:37878-37886. [PMID: 35948056 DOI: 10.1021/acsami.2c06937] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
To date, multifunctional sensors have aroused widespread concerns owing to their vital roles in the healthcare area. However, there are still significant challenges in the fabrication of functionalized integrated devices. In this work, hydrophobic-hydrophilic patterns are constructed on polyester-spandex-blended knitted fabric surface by the chemical click method, enabling accurate deposition of functionalized materials for sensitive and stable motion and humidity sensing. Representatively, a conductive silver nanowire (Ag NW) network was deliberately deposited on only the designated hydrophilic fabric surface to realize accurate, repeatable, and stable motion sensing. Such a Ag NWs sensor recorded a low electrical resistance (below 60 Ω), stable resistance cycling response (over 2000 cycles), and fast response time to humidity (0.46 s) during the sensing evaluation. In addition to experimental sensing, real human motions, such as mouth-opening and joint-flexing (wrist and neck), could also be detected using the same sensor. Similar promising outputs were also obtained over the humidity sensor fabricated over the same chemical click method, except the sensing material was replaced with polydopamine-modified carboxylated carbon nanotubes. The resultant sensor exhibits excellent sensitivity to not only experimentally adjusted environment humidity but also to the moisture content of breath and skin during daily activities. On top of all these, both sensors were fabricated over highly flexible fabric that offers high wearability, promising great application potential in the field of healthcare monitoring.
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Affiliation(s)
- Lexin Liu
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, P. R. China
| | - Yimeng Ni
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, P. R. China
| | - Jiajun Mao
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, P. R. China
| | - Shuhui Li
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, P. R. China
| | - Kim Hoong Ng
- Department of Chemical Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
| | - Zhong Chen
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798 Singapore
| | - Jianying Huang
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, P. R. China
| | - Weilong Cai
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, P. R. China
- Qingyuan Innovation Laboratory, Quanzhou 362801, P. R. China
| | - Yuekun Lai
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, P. R. China
- Qingyuan Innovation Laboratory, Quanzhou 362801, P. R. China
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21
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Chaudhary P, Lu H, Loes M, Lipatov A, Sinitskii A, Gruverman A. Mechanical Stress Modulation of Resistance in MoS 2 Junctions. NANO LETTERS 2022; 22:1047-1052. [PMID: 35041432 DOI: 10.1021/acs.nanolett.1c04019] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Strain engineering is a powerful strategy to control the physical properties of material-enabling devices with enhanced functionality and improved performance. Here, we investigate a modulation of the transport behavior of the two-dimensional MoS2 junctions under the mechanical stress induced by a tip of an atomic force microscope (AFM). We show that the junction resistance can be reversibly tuned by up to 4 orders of magnitude by altering a tip-induced force. Analysis of the stress-induced evolution of the I-V characteristics indicates a combined effect of the tip-induced strain and strain gradient on the energy barrier height and profile. In addition, we show that the tip-generated flexoelectric effect leads to significant enhancement of the photovoltaic effect in the MoS2 junctions. A combination of the optical and mechanical stimuli facilitates reversible photomechanical tuning of resistance of the narrow-band 2D semiconductors and development of devices with an enhanced photovoltaic response.
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Affiliation(s)
- Pradeep Chaudhary
- Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Michael Loes
- Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Alexey Lipatov
- Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States
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22
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Li WD, Ke K, Jia J, Pu JH, Zhao X, Bao RY, Liu ZY, Bai L, Zhang K, Yang MB, Yang W. Recent Advances in Multiresponsive Flexible Sensors towards E-skin: A Delicate Design for Versatile Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2103734. [PMID: 34825473 DOI: 10.1002/smll.202103734] [Citation(s) in RCA: 38] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2021] [Revised: 09/16/2021] [Indexed: 05/07/2023]
Abstract
Multiresponsive flexile sensors with strain, temperature, humidity, and other sensing abilities serving as real electronic skin (e-skin) have manifested great application potential in flexible electronics, artificial intelligence (AI), and Internet of Things (IoT). Although numerous flexible sensors with sole sensing function have already been reported since the concept of e-skin, that mimics the sensing features of human skin, was proposed about a decade ago, the ones with more sensing capacities as new emergences are urgently demanded. However, highly integrated and highly sensitive flexible sensors with multiresponsive functions are becoming a big thrust for the detection of human body motions, physiological signals (e.g., skin temperature, blood pressure, electrocardiograms (ECG), electromyograms (EMG), sweat, etc.) and environmental stimuli (e.g., light, magnetic field, volatile organic compounds (VOCs)), which are vital to real-time and all-round human health monitoring and management. Herein, this review summarizes the design, manufacturing, and application of multiresponsive flexible sensors and presents the future challenges of fabricating these sensors for the next-generation e-skin and wearable electronics.
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Affiliation(s)
- Wu-Di Li
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Kai Ke
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Jin Jia
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Jun-Hong Pu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Xing Zhao
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Rui-Ying Bao
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Zheng-Ying Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Lu Bai
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Kai Zhang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Ming-Bo Yang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
| | - Wei Yang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, Sichuan, 610065, China
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23
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Li F, Chen H, Xu L, Zhang F, Yin P, Yang T, Shen T, Qi J, Zhang Y, Li D, Ge Y, Zhang H. Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:33226-33236. [PMID: 34236163 DOI: 10.1021/acsami.1c05254] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ultrathin lamellar SnSe is highly attractive for applications in areas such as photonics, photodetectors, photovoltaic devices, and photocatalysis, owing to its suitable band gap, exceptional light absorption capabilities, and considerable carrier mobility. On the other hand, SnSe nanosheets (NSs) still face challenges of being difficult to prepare and their devices having low photoelectric conversion efficiencies. Herein, ultrathin SnSe NSs with controlled Se defects were synthesized with high yield by a facial Li intercalation-assisted liquid exfoliation method. The loss of Se, a narrowing of the band gap, and an increase in lattice disorders involving vacancies, distortions, and phase transition were observed in SnSe NSs prepared with a long lithiation process. Comparing between the 24 and 72 h lithiation samples, the ones processed for a longer time displayed a faster recombination time due to more defect-induced mid-states. Inspiringly, enhancements of 4-10 times were observed for photodetector device parameters such as photocurrent, photoresponsivity, photoresponse speed, and specific detectivity of the 72 h lithiation SnSe NSs. Additionally, these devices show good stability and a broad detection range, from ultraviolet to the near infrared region. Our results provide a promising avenue for the mass production of SnSe NSs with high photoelectric performance and open up opportunities for applications in photonics, optoelectronics, and photocatalysis.
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Affiliation(s)
- Feng Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Hualong Chen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lei Xu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Feng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Peng Yin
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tingqiang Yang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tao Shen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Delong Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yanqi Ge
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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24
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Wu Y, Wang L, Zhang H, Ding J, Han M, Fang M, Bao J, Wu Y. Syntheses, characterizationsna and water-electrolysis properties of 2D α- and β-PdSeO3 bulk and nanosheet semiconductors. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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25
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Liu F, Chen H, Xu C, Wang L, Qiu P, Gao S, Zhu J, Zhang S, Guo Z. Monoclinic dibismuth tetraoxide (m-Bi 2O 4) for piezocatalysis: new use for neglected materials. Chem Commun (Camb) 2021; 57:2740-2743. [PMID: 33594998 DOI: 10.1039/d0cc07064e] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Piezocatalysis is a promising approach for environmental pollutant removal. Monoclinic dibismuth tetraoxide (m-Bi2O4) was first applied to piezocatalyze organics under ultrasonic vibration. The built-in electric field with ultrasonic stress drives the separation of holes and electrons in m-Bi2O4. Its excellent piezocatalytic activity, reusability and chemical stability make m-Bi2O4 a new candidate of piezocatalysis.
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Affiliation(s)
- Fengling Liu
- Jiangsu Key Laboratory of Atmospheric Environment Monitoring and Pollution Control (AEMPC), Collaborative Innovation Center of Atmospheric Environment and Equipment Technology (CIC-AEET), School of Environmental Science and Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China.
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26
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Li R, Li X, Zhang M, Li Y, Yang Z, Huang C. A Universal Fe/N Incorporated Graphdiyne for Printing Flexible Ferromagnetic Semiconducting Electronics. J Phys Chem Lett 2021; 12:204-210. [PMID: 33325719 DOI: 10.1021/acs.jpclett.0c03309] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The vigorous development of two-dimensional materials puts forward higher requirements for more effective modulation of physical properties. Here, we utilize simple treatments for the emerging graphdiyne (GDY) materials to achieve dual control of magnetic and electrical properties through Fe/N codoping. The as-prepared Fe-N-GDY is confirmed as a highly conductive ferromagnetic semiconductor. The Curie temperature close to 205 K endows the materials promising application prospects in spin-related devices. Benefiting from uniform Fe/N comodification and performance optimization, such material could be used as carbon-based conductive ink for printed devices, such as a printed field-effect transistor (FET), which achieves a high mobility of 215 cm2 V-1 s-1. Even when printing Fe-N-GDY ink to assemble flexible FETs with an ionic liquid gate, the excellent transfer characteristics can be maintained and demonstrate stability with temperature. Those results provide a facile way to modulate GDY's properties and promote its application potential in large-area, multifunctional integrated electronic devices, including wearable devices.
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Affiliation(s)
- Ru Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Xiaodong Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Mingjia Zhang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Yuan Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Ze Yang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Changshui Huang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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27
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Du J, Yu H, Liu B, Hong M, Liao Q, Zhang Z, Zhang Y. Strain Engineering in 2D Material-Based Flexible Optoelectronics. SMALL METHODS 2021; 5:e2000919. [PMID: 34927808 DOI: 10.1002/smtd.202000919] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Revised: 11/22/2020] [Indexed: 06/14/2023]
Abstract
Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.
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Affiliation(s)
- Junli Du
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Baishan Liu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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28
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Zhu M, Du X, Liu S, Li J, Wang Z, Ono T. A review of strain sensors based on two-dimensional molybdenum disulfide. JOURNAL OF MATERIALS CHEMISTRY C 2021. [DOI: 10.1039/d1tc02102h] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
This review covers a short introduction to the structure, properties, and synthesis methods of MoS2. Emphasis is given to the different categories of strain sensing mechanisms and device architectures, which enable a high gauge factor (GF).
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Affiliation(s)
- Minjie Zhu
- Sensor and Network Control Center
- Instrumentation Technology and Economy Institute
- Beijing 100055
- China
| | - Xiaohui Du
- Sensor and Network Control Center
- Instrumentation Technology and Economy Institute
- Beijing 100055
- China
| | - Shuai Liu
- Sensor and Network Control Center
- Instrumentation Technology and Economy Institute
- Beijing 100055
- China
| | - Jinhua Li
- School of Mechanical Engineering
- Sichuan University
- Chengdu
- China
| | - Zhuqing Wang
- School of Mechanical Engineering
- Sichuan University
- Chengdu
- China
- Med+X Center for Manufacturing, West China Hospital, Sichuan University, Chengdu
| | - Takahito Ono
- Graduate School of Engineering, Tohoku University, Sendai
- Miyagi 980-8579
- Japan
- Micro System Integration Center, Tohoku University, Sendai
- Miyagi 980-0845
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29
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An J, Wang B, Shu C, Wu W, Sun B, Zhang Z, Li D, Li S. Research development of 2D materials based photodetectors towards mid‐infrared regime. NANO SELECT 2020. [DOI: 10.1002/nano.202000237] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023] Open
Affiliation(s)
- Junru An
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Bin Wang
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Chang Shu
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Wenming Wu
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Baoquan Sun
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Zhiyu Zhang
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- Key Laboratory of Optical System Advanced Manufacturing Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China
| | - Dabing Li
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Shaojuan Li
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
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30
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Shen T, Li F, Zhang Z, Xu L, Qi J. High-Performance Broadband Photodetector Based on Monolayer MoS 2 Hybridized with Environment-Friendly CuInSe 2 Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2020; 12:54927-54935. [PMID: 33238704 DOI: 10.1021/acsami.0c14161] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Monolayer MoS2, a direct bandgap transition metal dichalcogenide (TMD), has attracted worldwide attention in electronics and optoelectronics. However, the performance of photodetectors based on monolayer MoS2 is restricted to a weak optical absorption, narrow absorption range, and persistent photoconductance. Herein, benefiting from an easy solution process, high light absorption coefficient, and wide absorption range, environment-friendly CuInSe2 quantum dots (QDs) are hybridized with monolayer MoS2 for high-performance broadband photodetectors. Owing to the favorable type-II energy band alignment of MoS2/CuInSe2-QDs, the hybrid photodetector exhibits a broadband photoresponse from the ultraviolet to near-infrared region, with an ultrahigh photoresponsivity of 74.8 A/W at 1064 nm, and compared with those of the pristine MoS2 device, the photoresponsivity and specific detectivity in the ultraviolet-visible region were enhanced by about 30 and 20 times, respectively. Furthermore, the formed depletion region at the MoS2/CuInSe2-QDs interface can significantly increase the photoresponse speed, and the accumulated holes in the QD side induce a strong photogating effect to improve the photoresponsive characteristics of the hybrid photodetector. Our work opens up opportunities for fabricating high-performance monolayer TMD-based broadband photodetectors.
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Affiliation(s)
- Tao Shen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Feng Li
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zhenyun Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Lei Xu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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31
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Wang Y, Vu LM, Lu T, Xu C, Liu Y, Ou JZ, Li Y. Piezoelectric Responses of Mechanically Exfoliated Two-Dimensional SnS 2 Nanosheets. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51662-51668. [PMID: 33140968 DOI: 10.1021/acsami.0c16039] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The emergence of piezoelectric properties in two-dimensional (2D) layered transition metal dichalcogenides (TMDs) has triggered the intensive research on using low dimensional materials for conversion of mechanical stimuli into electrical signals or vice versa. While the bulk intrinsically presents no piezoelectric property, the origin of the piezoelectric responses in their 2D thin planes is ascribed to the loss of centrosymmetry. There are also other categories of 2D layered materials such as post-transition metal dichalcogenides (PTMDs) that might be of interests, which have been confirmed theoretically and are yet to be fully explored experimentally. In this work, we investigate the thickness-dependent piezoelectric responses of 2D tin disulfide (SnS2) nanosheets as a representative of layered PTMDs. The results indicate that the 2D SnS2 nanosheets with a thickness of ∼4 nm present an effective out-of-plane piezoelectric response of 2 ± 0.22 pm/V. Furthermore, the thickness dependence of the piezoelectric behavior at a resonant frequency shows that the piezoelectric coefficient decreases with increasing the thickness of 2D SnS2 nanosheets. Additionally, in reference to periodically poled lithium niobate piezoelectric crystal, the measured effective lateral piezoelectric coefficients at different voltages range from 0.61 to 1.55 pm/V with the average value at ∼1 pm/V. This study expands candidates for new piezoelectric materials in the 2D domain with comparable vertical and lateral coefficients, potentially opening a broader horizon for integration into sensors, actuators, and micro- and nanoelectromechanical systems.
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Affiliation(s)
- Yichao Wang
- School of Engineering, RMIT University, Melbourne, VIC 3000, Australia
| | - Le-May Vu
- School of Engineering, RMIT University, Melbourne, VIC 3000, Australia
| | - Teng Lu
- Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia
| | - Chenglong Xu
- School of Engineering, RMIT University, Melbourne, VIC 3000, Australia
| | - Yun Liu
- Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia
| | - Jian Zhen Ou
- School of Engineering, RMIT University, Melbourne, VIC 3000, Australia
| | - Yongxiang Li
- School of Engineering, RMIT University, Melbourne, VIC 3000, Australia
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