Magnetic Imaging of Domain Walls in the Antiferromagnetic Topological Insulator MnBi2Te4

Ubiquitous Order-Disorder Transition in the Mn Antisite Sublattice of the (MnBi2Te4)(Bi2Te3)n Magnetic Topological Insulators

Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi2Te4)(Bi2Te3)n layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this material platform is enabled by manganese-pnictogen intermixing, whose amounts and distribution patterns are controlled by synthetic conditions. Here, nuclear magnetic resonance and muon spin spectroscopy, sensitive local probe techniques, are employed to scrutinize the impact of the intermixing on the magnetic properties of (MnBi2Te4)(Bi2Te3)n and MnSb2Te4. The measurements not only confirm the opposite alignment between the Mn magnetic moments on native sites and antisites in the ground state of MnSb2Te4, but for the first time directly show the same alignment in (MnBi2Te4)(Bi2Te3)n with n = 0, 1 and 2. Moreover, for all compounds, the static magnetic moment of the Mn antisite sublattice is found to disappear well below the intrinsic magnetic transition temperature, leaving a homogeneous magnetic structure undisturbed by the intermixing. The findings provide a microscopic understanding of the crucial role played by Mn-Bi intermixing in (MnBi2Te4)(Bi2Te3)n and offer pathways to optimizing the magnetic gap in its surface states.

Imaging Thermally Fluctuating Néel Vectors in van der Waals Antiferromagnet NiPS3

Studying antiferromagnetic domains is essential for fundamental physics and potential spintronics applications. Despite their importance, few systematic studies have been performed on antiferromagnet (AFM) domains with high spatial resolution in van der Waals (vdW) materials, and direct probing of the Néel vectors remains challenging. In this work, we found multidomain states in the vdW AFM NiPS3, a material extensively investigated for its unique magnetic exciton. We employed photoemission electron microscopy combined with the X-ray magnetic linear dichroism (XMLD-PEEM) to image the NiPS3's magnetic structure. The nanometer-spatial resolution of XMLD-PEEM allows us to determine local Néel vector orientations and discover thermally fluctuating Néel vectors that are independent of the crystal symmetry even at 65 K, well below the TN of 155 K. We demonstrate that an in-plane orbital moment of the Ni ion is responsible for the weak magnetocrystalline anisotropy. The observed thermal fluctuations of the antiferromagnetic domains may explain the broadening of magnetic exciton peaks at higher temperatures.

High-resolution imaging of 3D stray-field components with a Fe3O4 nanoparticle sensor

Despite rapid advances in magnetic domain imaging techniques, high-resolution imaging of 3D magnetic field components remains a great challenge. Magnetic force microscopy has been utilized to observe the 1D magnetic field component from the sample surface; however, the 1D stray-field component lacks sufficient conditions to clarify the nature of nanomagnetism. Herein, we propose a method for the detection of 3D stray-field components by using a Fe3O4-nanoparticle sensor. We employed this Fe3O4-nanoparticle sensor to detect nanoscale magnetic domains, domain walls, and magnetic vortices (resolution ∼5 nm), and our findings demonstrate its potential in imaging both out-of-plane and in-plane magnetic-field components. Our technique overcomes the limitations of 3D stray-field detection and high-resolution imaging and provides the possibility of observing both out-of-plane and in-plane magnetic field components with a 5 nm resolution, thereby paving the way for the development of future spin-based devices.

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi_{2}Te_{4}

We propose an intrinsic mechanism to understand the even-odd effect, namely, opposite signs of anomalous Hall resistance and different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi_{2}Te_{4} thin films with electron doping. The nonzero hysteresis loops in the anomalous Hall effect and magnetic circular dichroism for even-SLs MnBi_{2}Te_{4} films originate from two different antiferromagnetic (AFM) configurations with different zeroth Landau level energies of surface states. The complex form of the anomalous Hall hysteresis loop can be understood from two magnetic transitions, a transition between two AFM states followed by a second transition to the ferromagnetic state. Our model also clarifies the relationship and distinction between axion parameter and magnetoelectric coefficient, and shows an even-odd oscillation behavior of magnetoelectric coefficients in MnBi_{2}Te_{4} films.

Progress on the antiferromagnetic topological insulator MnBi2Te4

Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed matter physics. They represent a new class of materials exhibiting nontrivial topological phases, and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic orders. In particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4 from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4 thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to the high-temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.

On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family

We review recent progress in the electronic structure study of intrinsic magnetic topological insulators (MnBi2Te4) · (Bi2Te3)n ([Formula: see text]) family. Specifically, we focus on the ubiquitously (nearly) gapless behavior of the topological Dirac surface state observed by photoemission spectroscopy, even though a large Dirac gap is expected because of surface ferromagnetic order. The dichotomy between experiment and theory concerning this gap behavior is perhaps the most critical and puzzling question in this frontier. We discuss various proposals accounting for the lack of magnetic effect on the topological Dirac surface state, which are mainly categorized into two pictures, magnetic reconfiguration and topological surface state redistribution. Band engineering towards opening a magnetic gap of topological surface states provides great opportunities to realize quantized topological transport and axion electrodynamics at higher temperatures.

ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2nTe4+3n family

In the past 5 years, there has been significant research interest in the intrinsic magnetic topological insulator family compounds MnBi2+2nTe4+3n (where n = 0, 1, 2 …). In particular, exfoliated thin films of MnBi2Te4 have led to numerous experimental breakthroughs, such as the quantum anomalous Hall effect, axion insulator phase and high-Chern number quantum Hall effect without Landau levels. However, despite extensive efforts, the energy gap of the topological surface states due to exchange magnetic coupling, which is a key feature of the characteristic band structure of the system, remains experimentally elusive. The electronic structure measured by using angle-resolved photoemission (ARPES) shows significant deviation from ab initio prediction and scanning tunneling spectroscopy measurements, making it challenging to understand the transport results based on the electronic structure. This paper reviews the measurements of the band structure of MnBi2+2nTe4+3n magnetic topological insulators using ARPES, focusing on the evolution of their electronic structures with temperature, surface and bulk doping and film thickness. The aim of the review is to construct a unified picture of the electronic structure of MnBi2+2nTe4+3n compounds and explore possible control of their topological properties.

Universal Conductance Fluctuations in a MnBi2Te4 Thin Film

Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors. Although magnetic order can also strongly affect transport, the combination of coherence and magnetic order has been largely unexplored. Here, we examine quantum coherence-driven universal conductance fluctuations in the antiferromagnetic, canted antiferromagnetic, and ferromagnetic phases of a thin film of the topological material MnBi2Te4. In each magnetic phase, we extract a charge carrier phase coherence length of about 100 nm. The conductance magnetofingerprint is repeatable when sweeping applied magnetic field within one magnetic phase. Surprisingly, in the antiferromagnetic and canted antiferromagnetic phases, but not in the ferromagnetic phase, the magnetofingerprint depends on the direction of the field sweep. To explain our observations, we suggest that conductance fluctuation measurements are sensitive to the motion and nucleation of magnetic domain walls in MnBi2Te4.

Magnetic Topological Insulator MnBi2Te4 Nanosheets for Femtosecond Pulse Generation

The van der Waals layered material MnBi2Te4, as a magnetic topological insulator, has attracted tremendous interest for novel physics research in the fields of condensed matter physics and materials science. However, the nonlinear optical properties of MnBi2Te4 and its applications in ultrafast optics have rarely been explored. In this study, high-quality MnBi2Te4 nanosheets have been successfully synthesized by the self-flux method. The morphology, chemical composition, magnetic properties, and nonlinear optical characteristics were systematically investigated. The magnetic transition of MnBi2Te4 was confirmed by a low-temperature spatially resolved spectroscopic technique. The saturable absorption property of MnBi2Te4 was measured by a balanced twin-detector system with a modulation depth of 4.5% and a saturation optical intensity of 2.35 GW/cm2. Furthermore, by inserting the MnBi2Te4-based saturable absorber, a soliton mode-locking laser operating at 1558.8 nm was obtained with a pulse duration of 331 fs. This research will pave the way for applications of the magnetic TI MnBi2Te4 in nonlinear optics and photonics.

Anomalous Landau quantization in intrinsic magnetic topological insulators

The intrinsic magnetic topological insulator, Mn(Bi1-xSbx)2Te4, has been identified as a Weyl semimetal with a single pair of Weyl nodes in its spin-aligned strong-field configuration. A direct consequence of the Weyl state is the layer dependent Chern number, [Formula: see text]. Previous reports in MnBi2Te4 thin films have shown higher [Formula: see text] states either by increasing the film thickness or controlling the chemical potential. A clear picture of the higher Chern states is still lacking as data interpretation is further complicated by the emergence of surface-band Landau levels under magnetic fields. Here, we report a tunable layer-dependent [Formula: see text] = 1 state with Sb substitution by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dual-gated devices-consistent with calculations of the bulk Weyl point separation in the doped thin films. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted by a theory of surface and bulk spin-polarised Landau level spectra in thin film magnetic topological insulators.

Electrically Active Domain Wall Magnons in Layered van der Waals Antiferromagnets

We study, theoretically, domain wall (DW) magnons-elementary collective excitations of magnetic DWs-in easy-axis layered van der Waals (vdW) antiferromagnets, where they behave as normal modes of coupled spin superfluids. We uncover that, due to spin-charge coupling in vdW magnets, such DW magnons can be activated by voltage-induced torques, thereby providing a path for their low-dissipation and nanoscale excitation. Moreover, the electrical activation and the number of DW magnons at a frequency can be controlled by applying symmetry-breaking static magnetic field, adding tunability of signal transmission by them. Our results highlight that domain walls in vdW magnets provide a promising platform to route coherent spin information for a broad range of explorations in spintronics and magnetism.

Controllable Chirality and Band Gap of Quantum Anomalous Hall Insulators

Finding guiding principles to optimize properties of quantum anomalous Hall (QAH) insulators is of pivotal importance to fundamental science and applications. Here, we build a first-principles QAH material database of chirality and band gap, explore microscopic mechanisms determining the QAH material properties, and obtain a general physical picture that can help researchers comprehensively understand the QAH data. Our results reveal that the usually neglected Coulomb exchange is unexpectedly strong in a large class of QAH materials, which is the key to resolve experimental puzzles. Moreover, we identify simple indicators for property evaluation and suggest material design strategies to control QAH chirality and gap by tuning cooperative or competing contributions via magnetic codoping, heterostructuring, spin-orbit proximity, etc. The work is valuable to future research of magnetic topological physics and materials.

Large Exchange Coupling Between Localized Spins and Topological Bands in MnBi2 Te4

Magnetism in topological materials creates phases exhibiting quantized transport phenomena with potential technological applications. The emergence of such phases relies on strong interaction between localized spins and the topological bands, and the consequent formation of an exchange gap. However, this remains experimentally unquantified in intrinsic magnetic topological materials. Here, this interaction is quantified in MnBi₂ Te₄ , a topological insulator with intrinsic antiferromagnetism. This is achieved by optically exciting Bi-Te p states comprising the bulk topological bands and interrogating the consequent Mn 3d spin dynamics, using a multimodal ultrafast approach. Ultrafast electron scattering and magneto-optic measurements show that the p states demagnetize via electron-phonon scattering at picosecond timescales. Despite being energetically decoupled from the optical excitation, the Mn 3d spins, probed by resonant X-ray scattering, are observed to disorder concurrently with the p spins. Together with atomistic simulations, this reveals that the exchange coupling between localized spins and the topological bands is at least 100 times larger than the superexchange interaction, implying an optimal exchange gap of at least 25 meV in the surface states. By quantifying this exchange coupling, this study validates the materials-by-design strategy of utilizing localized magnetic order to manipulate topological phases, spanning static to ultrafast timescales.

Direct Visualization of Surface Spin-Flip Transition in MnBi_{4}Te_{7}

We report direct visualization of spin-flip transition of the surface layer in antiferromagnet MnBi_{4}Te_{7}, a natural superlattice of alternating MnBi_{2}Te_{4} and Bi_{2}Te_{3} layers, using cryogenic magnetic force microscopy (MFM). The observation of magnetic contrast across domain walls and step edges confirms that the antiferromagnetic order persists to the surface layers. The magnetic field dependence of the MFM images reveals that the surface magnetic layer undergoes a first-order spin-flip transition at a magnetic field that is lower than the bulk transition, in excellent agreement with a revised Mills model. Our analysis suggests no reduction of the order parameter in the surface magnetic layer, implying robust ferromagnetism in the single-layer limit. The direct visualization of surface spin-flip transition not only opens up exploration of surface metamagnetic transitions in layered antiferromagnets, but also provides experimental support for realizing quantized transport in ultrathin films of MnBi_{4}Te_{7} and other natural superlattice topological magnets.

Nanoscale Antiferromagnetic Domain Imaging using Full-Field Resonant X-ray Magnetic Diffraction Microscopy

The physical properties of magnetic materials frequently depend not only on the microscopic spin and electronic structures, but also on the structures of mesoscopic length scales that emerge, for instance, from domain formations, or chemical and/or electronic phase separations. However, experimental access to such mesoscopic structures is currently limited, especially for antiferromagnets with net zero magnetization. Here, full-field microscopy and resonant magnetic X-ray diffraction are combined to visualize antiferromagnetic (AF) domains of the spin-orbit Mott insulator Sr₂ IrO₄ with area over ≈0.1 mm² and with spatial resolution as high as ≈150 nm. With the unprecedented wide field of views and high spatial resolution, an intertwining of two AF domains on a length comparable to the measured average AF domain wall width of 545 nm is revealed. This mesoscopic structure comprises a substantial portion of the sample surface, and thus can result in a macroscopic response unexpected from its microscopic magnetic structure. In particular, the symmetry analysis presented in this work shows that the inversion symmetry, which is preserved by the microscopic AF order, becomes ill-defined at the mesoscopic length scale. This result underscores the importance of this novel technique for a thorough understanding of the physical properties of antiferromagnets.

Visualizing Atomically Layered Magnetism in CrSBr

2D materials can host long-range magnetic order in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity (i.e., strain) on the emergence of stable magnetic phases. Here, spatially dependent magnetism in few-layer CrSBr is revealed using magnetic force microscopy (MFM) and Monte Carlo-based simulations. Nanoscale visualization of the magnetic sheet susceptibility is extracted from MFM data and force-distance curves, revealing a characteristic onset of both intra- and interlayer magnetic correlations as a function of temperature and layer-thickness. These results demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature (T_N ). Furthermore, the AFM phase can be reliably suppressed using modest fields (≈16 mT) from the MFM probe, behaving as a nanoscale magnetic switch. This prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and validates MFM for use in nanomagnetometry of 2D materials (despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets).

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Detection of Topological Spin Textures via Nonlinear Magnetic Responses

Topologically nontrivial spin textures, such as skyrmions and dislocations, display emergent electrodynamics and can be moved by spin currents over macroscopic distances. These unique properties and their nanoscale size make them excellent candidates for the development of next-generation race-track memory and unconventional computing. A major challenge for these applications and the investigation of nanoscale magnetic structures in general is the realization of suitable detection schemes. We study magnetic disclinations, dislocations, and domain walls in FeGe and reveal pronounced responses that distinguish them from the helimagnetic background. A combination of magnetic force microscopy (MFM) and micromagnetic simulations links the response to the local magnetic susceptibility, that is, characteristic changes in the spin texture driven by the MFM tip. On the basis of the findings, which we explain using nonlinear response theory, we propose a read-out scheme using superconducting microcoils, presenting an innovative approach for detecting topological spin textures and domain walls in device-relevant geometries.

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb_{2}Te_{4}

MnBi_{2}Te_{4}, an intrinsic magnetic topological insulator, has shown layer-number-correlated magnetic and topological phases. More interestingly, in the isostructural material MnSb_{2}Te_{4}, the antiferromagnetic (AFM) and ferromagnetic (FM) states have been both observed in the bulk counterparts, which are also predicted to be topologically nontrivial. Revealing the layer-number-dependent magnetic properties of MnSb_{2}Te_{4} down to a single septuple layer (SL) is of great significance for exploring the topological phenomena. However, this is still elusive. Here, using the polar reflective magnetic circular dichroism spectroscopy, both the A-type AFM and FM behaviors are observed and comprehensively studied in MnSb_{2}Te_{4} down to a single SL limit. In A-type AFM MnSb_{2}Te_{4} flakes, an obvious odd-even layer-number effect is observed. An additional surface spin-flop (SSF) transition occurs in even-SL flakes with the number of layers larger than 2. With the AFM linear-chain model, we identify that the even-SL flakes stabilize in a collinear state between the SSF transition and the spin-flop transition due to their appropriate energy ratio between the magnetic-field-scale anisotropy and interlayer interaction. In FM MnSb_{2}Te_{4} flakes, we observe very different magnetic behaviors with an abrupt spin-flipping transition and very small saturation fields, indicating a weakened interlayer interaction. By revealing the rich magnetic states of few-SL MnSb_{2}Te_{4} on the parameter space of the number of layers, external magnetic field, and temperature, our findings pave the way for further quantum transport studies of few-SL MnSb_{2}Te_{4}.

Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque

Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Here, we show an unconventional response to spin-orbit torque of a non-collinear antiferromagnet Mn₃Sn, which has attracted attention owing to its large anomalous Hall effect despite a vanishingly small net magnetization. In epitaxial heavy-metal/Mn₃Sn heterostructures, we observe a characteristic fluctuation of the Hall resistance under the application of electric current. This observation is explained by a rotation of the chiral-spin structure of Mn₃Sn driven by spin-orbit torque. We find that the variation of the magnitude of anomalous Hall effect fluctuation with sample size correlates with the number of magnetic domains in the Mn₃Sn layer. In addition, the dependence of the critical current on Mn₃Sn layer thickness reveals that spin-orbit torque generated by small current densities, below 20 MA cm^-2, effectively acts on the chiral-spin structure even in Mn₃Sn layers that are thicker than 20 nm. The results provide additional pathways for electrical manipulation of magnetic materials.

Pressure-Tuned Intralayer Exchange in Superlattice-Like MnBi2Te4/(Bi2Te3)n Topological Insulators

The magnetic structures of MnBi₂Te₄(Bi₂Te₃)_n can be manipulated by tuning the interlayer coupling via the number of Bi₂Te₃ spacer layers n, while the intralayer ferromagnetic (FM) exchange coupling is considered too robust to control. By applying hydrostatic pressure up to 3.5 GPa, we discover opposite responses of magnetic properties for n = 1 and 2. MnBi₄Te₇ stays at A-type antiferromagnetic (AFM) phase with a decreasing Néel temperature and an increasing saturation field. In sharp contrast, MnBi₆Te₁₀ experiences a phase transition from A-type AFM to a quasi-two-dimensional FM state with a suppressed saturation field under pressure. First-principles calculations reveal the essential role of intralayer exchange coupling from lattice compression in determining these magnetic properties. Such magnetic phase transition is also observed in 20% Sb-doped MnBi₆Te₁₀ because of the in-plane lattice compression.

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4

MnBi₂Te₄, a van der Waals magnet, is an emergent platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer number dependent topological states. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish one-to-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi₂Te₄ devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk band gap, corresponding to the concurrent topological phase transition in both even- and odd-layer-number devices. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet.

Imaging non-collinear antiferromagnetic textures via single spin relaxometry

Antiferromagnetic materials are promising platforms for next-generation spintronics owing to their fast dynamics and high robustness against parasitic magnetic fields. However, nanoscale imaging of the magnetic order in such materials with zero net magnetization remains a major experimental challenge. Here we show that non-collinear antiferromagnetic spin textures can be imaged by probing the magnetic noise they locally produce via thermal populations of magnons. To this end, we perform nanoscale, all-optical relaxometry with a scanning quantum sensor based on a single nitrogen-vacancy (NV) defect in diamond. Magnetic noise is detected through an increase of the spin relaxation rate of the NV defect, which results in an overall reduction of its photoluminescence signal under continuous laser illumination. As a proof-of-concept, the efficiency of the method is demonstrated by imaging various spin textures in synthetic antiferromagnets, including domain walls, spin spirals and antiferromagnetic skyrmions. This imaging procedure could be extended to a large class of intrinsic antiferromagnets and opens up new opportunities for studying the physics of localized spin wave modes for magnonics.

Robust A-Type Order and Spin-Flop Transition on the Surface of the Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Here, we present microscopic evidence of the persistence of uniaxial A-type antiferromagnetic order to the surface layers of MnBi_{2}Te_{4} single crystals using magnetic force microscopy. Our results reveal termination-dependent magnetic contrast across both surface step edges and domain walls, which can be screened by thin layers of soft magnetism. The robust surface A-type order is further corroborated by the observation of termination-dependent surface spin-flop transitions, which have been theoretically proposed decades ago. Our results not only provide key ingredients for understanding the electronic properties of the antiferromagnetic topological insulator MnBi_{2}Te_{4}, but also open a new paradigm for exploring intrinsic surface metamagnetic transitions in natural antiferromagnets.