1
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Tyson KH, Godfrey JR, Fraser JM, Knobel RG. Localized Gradual Photomediated Brightness and Lifetime Increase of Superacid-Treated Monolayer MoS 2. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39312628 DOI: 10.1021/acsami.4c00836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
Monolayer semiconducting transition-metal dichalcogenides (S-TMDs) have been extensively studied as materials for next-generation optoelectronic devices due to their direct band gap and high exciton binding energy at room temperature. Under a superacid treatment of bis(trifluoromethane)sulfonimide (TFSI), sulfur-based TMDs such as MoS2 can emit strong photoluminescence (PL) with a photoluminescence quantum yield (PLQY) approaching unity. However, the magnitude of PL enhancement varies by more than 2 orders of magnitude in published reports. A major culprit behind the discrepancy is sulfur-based TMD's sensitivity to above-bandgap photostimulation. Here, we present a detailed study of how TFSI-treated MoS2 reacts to photostimulation with increasing PL occurring hours after continuous or pulsed laser exposure. The PL of TFSI-treated MoS2 is enhanced up to 74 times its initial intensity after 5 h of continuous exposure to 532 nm laser light. Photostimulation also enhances the PL of untreated MoS2 but with a much smaller enhancement. Caution should be taken when probing MoS2 PL spectra, as above-bandgap light can alter the resulting intensity and peak wavelength of the emission over time. The presence of air is verified to play a key role in the photostimulated enhancement effect. Additionally, the rise of PL intensity is mirrored by an increase in measured carrier lifetime of up to ∼400 ps, consistent with the suppression of nonradiative pathways. This work demonstrates why variations in PL intensity are observed across samples and provides an understanding of the changes in carrier lifetimes to better engineer next-generation optoelectronic devices.
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Affiliation(s)
- Kurt H Tyson
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - James R Godfrey
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - James M Fraser
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - Robert G Knobel
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
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2
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Osestad EK, Zossimova E, Walter M, Holst B, Fiedler J. Atomic diffraction by nanoholes in hexagonal boron nitride. NANOSCALE ADVANCES 2024:d4na00322e. [PMID: 39233742 PMCID: PMC11367323 DOI: 10.1039/d4na00322e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2024] [Accepted: 08/21/2024] [Indexed: 09/06/2024]
Abstract
Fabricating patterned nanostructures with matter waves can help to realise new nanophotonic devices. However, due to dispersion effects, designing patterns with nanoscale features is challenging. Here, we consider the propagation of a helium matter wave through different holes in hexagonal boron nitride (h-BN) as a case study for the weakest dispersion interaction and the matter wave's diffraction as it passes through the holes. We use a quantum-mechanical model to calculate the polarisability of edge atoms around the holes, where we observe polarisation ripples of enhanced and reduced polarisabilities around the holes. We use these values to calculate van der Waals dispersion coefficients for the scattered helium atoms. We find that the resulting diffraction patterns are affected by the shape and size of the holes, where the smallest holes have a radius of just 6 Å. These results can be used to predict the resolution limits of nano-hole patterns on nanophotonic materials.
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Affiliation(s)
- Eivind Kristen Osestad
- Department of Physics and Technology, University of Bergen Allégaten 55 5007 Bergen Norway
- Lace Lithography AS Allégaten 55 5007 Bergen Norway
| | - Ekaterina Zossimova
- Department of Physics and Astronomy, Living Systems Institute, University of Exeter EX4 4QD Exeter UK
- Freiburg Center for Interactive Materials and Bioinspired Technologies (FIT), University of Freiburg D-79110 Freiburg Germany
| | - Michael Walter
- Freiburg Center for Interactive Materials and Bioinspired Technologies (FIT), University of Freiburg D-79110 Freiburg Germany
- Institute of Physics, University of Freiburg Hermann-Herder-Str. 3 79104 Freiburg Germany
| | - Bodil Holst
- Department of Physics and Technology, University of Bergen Allégaten 55 5007 Bergen Norway
- Lace Lithography AS Allégaten 55 5007 Bergen Norway
| | - Johannes Fiedler
- Department of Physics and Technology, University of Bergen Allégaten 55 5007 Bergen Norway
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3
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Islam MS, Chowdhury RK, Barthelemy M, Moczko L, Hebraud P, Berciaud S, Barsella A, Fras F. Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flake Morphology. ACS NANO 2024. [PMID: 39083640 DOI: 10.1021/acsnano.3c10403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, the precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines from liquid exfoliated hBN nanoflake samples, revealing 11 narrow sets of defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission line widths, spatial density, phonon side bands, and Franck-Condon-related factors. These findings provide valuable insights into deciphering the microscopic origin of emitters in hBN hosts. We also explored the influence of the hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning the flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It emphasizes the significance of the morphological aspects of hBN hosts for gaining insights into defect origins and expanding their spectral control.
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Affiliation(s)
- Md Samiul Islam
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Rup Kumar Chowdhury
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Marie Barthelemy
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Loic Moczko
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Pascal Hebraud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Stephane Berciaud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Alberto Barsella
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Francois Fras
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
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4
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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5
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Hötger A, Männer W, Amit T, Hernangómez-Pérez D, Taniguchi T, Watanabe K, Wurstbauer U, Finley JJ, Refaely-Abramson S, Kastl C, Holleitner AW. Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS 2. NANO LETTERS 2023; 23:11655-11661. [PMID: 38054904 DOI: 10.1021/acs.nanolett.3c03517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.
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Affiliation(s)
- Alexander Hötger
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
| | - Wolfgang Männer
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
| | - Tomer Amit
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Daniel Hernangómez-Pérez
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Ursula Wurstbauer
- Institute of Physics, Westfälische Wilhelms-Universität Münster, Münster 48149, Germany
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
| | - Sivan Refaely-Abramson
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Christoph Kastl
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
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6
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Walke P, Kaupmees R, Grossberg-Kuusk M, Krustok J. Unusual Defect-Related Room-Temperature Emission from WS 2 Monolayers Synthesized through a Potassium-Based Precursor. ACS OMEGA 2023; 8:37958-37970. [PMID: 37867715 PMCID: PMC10586178 DOI: 10.1021/acsomega.3c03476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 08/29/2023] [Indexed: 10/24/2023]
Abstract
Alkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS2 monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum. This is seen 200-300 meV below the A exciton and can dominate the signal at room temperature. The emission is spatially heterogeneous, and its presence is attributed to defects in the layer due to sublinear intensity power dependence, a noticeable aging effect, and insensitivity to washing in water and acetone. Interestingly, statistical analysis links the band to an increase in the width of the A1g Raman band. The emission can be controlled by altering when hydrogen is introduced into the growth process. This work demonstrates intrinsic and intense defect-related emission at room temperature and establishes further opportunities for tuning TMD properties through alkali-metal precursors.
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Affiliation(s)
- Peter Walke
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Reelika Kaupmees
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Maarja Grossberg-Kuusk
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Jüri Krustok
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
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7
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Bui MN, Rost S, Auge M, Zhou L, Friedrich C, Blügel S, Kretschmer S, Krasheninnikov AV, Watanabe K, Taniguchi T, Hofsäss HC, Grützmacher D, Kardynał BE. Optical Properties of MoSe 2 Monolayer Implanted with Ultra-Low-Energy Cr Ions. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37432886 PMCID: PMC10375475 DOI: 10.1021/acsami.3c05366] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2023]
Abstract
This paper explores the optical properties of an exfoliated MoSe2 monolayer implanted with Cr+ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe2 reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterized by nonzero activation energy, long lifetimes, and weak response to the magnetic field. To rationalize the experimental results and get insights into the atomic structure of the defects, we modeled the Cr-ion irradiation process using ab initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low-energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of two-dimensional (2D) materials by doping.
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Affiliation(s)
- Minh N Bui
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Stefan Rost
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
- Peter Grünberg Institute 1 (PGI-1) and Institute for Advanced Simulation 1 (IAS-1), Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - Manuel Auge
- II. Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Lanqing Zhou
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | | | - Stefan Blügel
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
- II. Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Silvan Kretschmer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Hans C Hofsäss
- II. Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Detlev Grützmacher
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Beata E Kardynał
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
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8
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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9
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Gupta S, Wu W, Huang S, Yakobson BI. Single-Photon Emission from Two-Dimensional Materials, to a Brighter Future. J Phys Chem Lett 2023; 14:3274-3284. [PMID: 36977324 DOI: 10.1021/acs.jpclett.2c03674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Single photons, often called flying qubits, have enormous promise to realize scalable quantum technologies ranging from an unhackable communication network to quantum computers. However, finding an ideal single-photon emitter (SPE) is a great challenge. Recently, two-dimensional (2D) materials have shown great potential as hosts for SPEs that are bright and operate under ambient conditions. This Perspective enumerates the metrics required for an SPE source and highlights that 2D materials, because of reduced dimensionality, exhibit interesting physical effects and satisfy several metrics, making them excellent candidates to host SPEs. The performance of SPE candidates discovered in 2D materials, hexagonal boron nitride and transition metal dichalcogenides, will be assessed based on the metrics, and the remaining challenges will be highlighted. Lastly, strategies to mitigate such challenges by developing design rules to deterministically create SPE sources will be presented.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Wenjing Wu
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
- Smalley-Curl Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
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10
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Klein J, Song Z, Pingault B, Dirnberger F, Chi H, Curtis JB, Dana R, Bushati R, Quan J, Dekanovsky L, Sofer Z, Alù A, Menon VM, Moodera JS, Lončar M, Narang P, Ross FM. Sensing the Local Magnetic Environment through Optically Active Defects in a Layered Magnetic Semiconductor. ACS NANO 2023; 17:288-299. [PMID: 36537371 DOI: 10.1021/acsnano.2c07655] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects because of a direct gap, in addition to a rich magnetic phase diagram, including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe a spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low-temperature, defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and nonlocal exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with direct optical access.
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Affiliation(s)
- Julian Klein
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Zhigang Song
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- College of Letters and Science, UCLA, Los Angeles, California90095, United States
| | - Benjamin Pingault
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- QuTech, Delft University of Technology, 2600 GADelft, The Netherlands
| | - Florian Dirnberger
- Department of Physics, City College of New York, New York, New York10031, United States
| | - Hang Chi
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
- U.S. Army CCDC Army Research Laboratory, Adelphi, Maryland20783, United States
| | - Jonathan B Curtis
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- College of Letters and Science, UCLA, Los Angeles, California90095, United States
| | - Rami Dana
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Rezlind Bushati
- Department of Physics, City College of New York, New York, New York10031, United States
- Department of Physics, The Graduate Center, City University of New York, New York, New York10016, United States
| | - Jiamin Quan
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas78712, United States
- Photonics Initiative, CUNY Advanced Science Research Center, New York, New York10031, United States
- Department of Electrical Engineering, City College of the City University of New York, New York, New York10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York10026, United States
| | - Lukas Dekanovsky
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28Prague 6, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28Prague 6, Czech Republic
| | - Andrea Alù
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas78712, United States
- Photonics Initiative, CUNY Advanced Science Research Center, New York, New York10031, United States
- Department of Electrical Engineering, City College of the City University of New York, New York, New York10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York10026, United States
| | - Vinod M Menon
- Department of Physics, City College of New York, New York, New York10031, United States
- Department of Physics, The Graduate Center, City University of New York, New York, New York10016, United States
| | - Jagadeesh S Moodera
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Marko Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- College of Letters and Science, UCLA, Los Angeles, California90095, United States
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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11
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Stevens CE, Chuang HJ, Rosenberger MR, McCreary KM, Dass CK, Jonker BT, Hendrickson JR. Enhancing the Purity of Deterministically Placed Quantum Emitters in Monolayer WSe 2. ACS NANO 2022; 16:20956-20963. [PMID: 36445838 DOI: 10.1021/acsnano.2c08553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We present a method utilizing an applied electrostatic potential for suppressing the broad defect bound excitonic emission in two-dimensional materials (2DMs) which otherwise inhibits the purity of strain induced single photon emitters (SPEs). Our heterostructure consists of a WSe2 monolayer on a polymer in which strain has been deterministically introduced via an atomic force microscope (AFM) tip. We show that by applying an electrostatic potential, the broad defect bound background is suppressed at cryogenic temperatures, resulting in a substantial improvement in single photon purity demonstrated by a 10-fold reduction of the correlation function g(2)(0) value from 0.73 to 0.07. In addition, we see a 2-fold increase in the intensity of the SPEs as well as the ability to activate/deactivate the emitters at certain wavelengths. Finally, we present an increase in the operating temperature of the SPE up to 110 K, a 50 K increase when compared with the results when no electrostatic potential is present.
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Affiliation(s)
| | - Hsun-Jen Chuang
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Matthew R Rosenberger
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Kathleen M McCreary
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Chandriker Kavir Dass
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Berend T Jonker
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
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12
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan
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13
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Sigger F, Amersdorffer I, Hötger A, Nutz M, Kiemle J, Taniguchi T, Watanabe K, Förg M, Noe J, Finley JJ, Högele A, Holleitner AW, Hümmer T, Hunger D, Kastl C. Ultra-Sensitive Extinction Measurements of Optically Active Defects in Monolayer MoS 2. J Phys Chem Lett 2022; 13:10291-10296. [PMID: 36305703 DOI: 10.1021/acs.jpclett.2c02386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS2 generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below 1 × 1011 cm-2. The corresponding spectra reveal a broad subgap absorption, being consistent with theoretical predictions related to sulfur vacancy-bound excitons in MoS2. Our results highlight cavity-enhanced extinction spectroscopy as efficient means for the detection of optical transitions in nanoscale thin films with weak absorption, applicable to a broad range of materials.
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Affiliation(s)
- Florian Sigger
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
| | - Ines Amersdorffer
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
- Qlibri GmbH, Maistr. 67, 80337Munich, Germany
- Faculty of Physics, Ludwig-Maximilians-Universität München, Schellingstraße 4, 80799Munich, Germany
| | - Alexander Hötger
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
| | - Manuel Nutz
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
- Qlibri GmbH, Maistr. 67, 80337Munich, Germany
- Faculty of Physics, Ludwig-Maximilians-Universität München, Schellingstraße 4, 80799Munich, Germany
| | - Jonas Kiemle
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba305-0044, Japan
| | - Michael Förg
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
- Qlibri GmbH, Maistr. 67, 80337Munich, Germany
- Faculty of Physics, Ludwig-Maximilians-Universität München, Schellingstraße 4, 80799Munich, Germany
| | - Jonathan Noe
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
- Qlibri GmbH, Maistr. 67, 80337Munich, Germany
- Faculty of Physics, Ludwig-Maximilians-Universität München, Schellingstraße 4, 80799Munich, Germany
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
| | - Alexander Högele
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
- Faculty of Physics, Ludwig-Maximilians-Universität München, Schellingstraße 4, 80799Munich, Germany
| | - Alexander W Holleitner
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
| | - Thomas Hümmer
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
- Qlibri GmbH, Maistr. 67, 80337Munich, Germany
- Faculty of Physics, Ludwig-Maximilians-Universität München, Schellingstraße 4, 80799Munich, Germany
| | - David Hunger
- Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131Karlsruhe, Germany
| | - Christoph Kastl
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799Munich, Germany
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14
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Li S, Chui KK, Shen F, Huang H, Wen S, Yam C, Shao L, Xu J, Wang J. Generation and Detection of Strain-Localized Excitons in WS 2 Monolayer by Plasmonic Metal Nanocrystals. ACS NANO 2022; 16:10647-10656. [PMID: 35816169 DOI: 10.1021/acsnano.2c02300] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Excitons in a transition-metal dichalcogenide (TMDC) monolayer can be modulated through strain with spatial and spectral control, which offers opportunities for constructing quantum emitters for applications in on-chip quantum communication and information processing. Strain-localized excitons in TMDC monolayers have so far mainly been observed under cryogenic conditions because of their subwavelength emission area, low quantum yield, and thermal-fluctuation-induced delocalization. Herein, we demonstrate both generation and detection of strain-localized excitons in WS2 monolayer through a simple plasmonic structure design, where WS2 monolayer covers individual Au nanodisks or nanorods. Enhanced emission from the strain-localized excitons of the deformed WS2 monolayer near the plasmonic hotspots is observed at room temperature with a photoluminescence energy redshift up to 200 meV. The emission intensity and peak energy of the strain-localized excitons can be adjusted by the nanodisk size. Furthermore, the excitation and emission polarization of the strain-localized excitons are modulated by anisotropic Au nanorods. Our results provide a promising strategy for constructing nonclassical integrated light sources, high-sensitivity strain sensors, or tunable nanolasers for future dense nanophotonic integrated circuits.
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Affiliation(s)
- Shasha Li
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Ka Kit Chui
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - Fuhuan Shen
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - He Huang
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - Shizheng Wen
- Beijing Computational Science Research Center, Beijing 100193, China
| | - ChiYung Yam
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Lei Shao
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - Jianfang Wang
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
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15
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Ghosh Dastidar M, Thekkooden I, Nayak PK, Praveen Bhallamudi V. Quantum emitters and detectors based on 2D van der Waals materials. NANOSCALE 2022; 14:5289-5313. [PMID: 35322836 DOI: 10.1039/d1nr08193d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.
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Affiliation(s)
- Madhura Ghosh Dastidar
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Immanuel Thekkooden
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pramoda K Nayak
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Vidya Praveen Bhallamudi
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
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16
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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17
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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18
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Nguyen TD, Jiang J, Song B, Tran MD, Choi W, Kim JH, Kim Y, Duong DL, Lee YH. Gate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2102911. [PMID: 34713632 PMCID: PMC8693072 DOI: 10.1002/advs.202102911] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2021] [Revised: 09/19/2021] [Indexed: 05/16/2023]
Abstract
The confined defects in 2D van der Waals (vdW)-layered semiconductors can be easily tailored using charge doping, strain, or an electric field. Nevertheless, gate-tunable magnetic order via intrinsic defects has been rarely observed to date. Herein, a gate-tunable magnetic order via resonant Se vacancies in WSe2 is demonstrated. The Se-vacancy states are probed via photocurrent measurements with gating to convert unoccupied states to partially occupied states associated with photo-excited carrier recombination. The magneto-photoresistance hysteresis is modulated by gating, which is consistent with the density functional calculations. The two energy levels associated with Se vacancies split with increasing laser power, owing to the robust Coulomb interaction and strong spin-orbit coupling. The findings offer a new approach for controlling the magnetic properties of defects in optoelectronic and spintronic devices using vdW-layered semiconductors.
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Affiliation(s)
- Tuan Dung Nguyen
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Jinbao Jiang
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- School of Microelectronics Science and TechnologySun Yat‐sen UniversityZhuhai519082China
| | - Bumsub Song
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Minh Dao Tran
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
| | - Wooseon Choi
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Ji Hee Kim
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Young‐Min Kim
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
- Department of PhysicsSungkyunkwan UniversitySuwon16419Republic of Korea
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19
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So JP, Kim HR, Baek H, Jeong KY, Lee HC, Huh W, Kim YS, Watanabe K, Taniguchi T, Kim J, Lee CH, Park HG. Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure. SCIENCE ADVANCES 2021; 7:eabj3176. [PMID: 34669464 PMCID: PMC8528413 DOI: 10.1126/sciadv.abj3176] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Quantum confinement in transition metal dichalcogenides (TMDCs) enables the realization of deterministic single-photon emitters. The position and polarization control of single photons have been achieved via local strain engineering using nanostructures. However, most existing TMDC-based emitters are operated by optical pumping, while the emission sites in electrically pumped emitters are uncontrolled. Here, we demonstrate electrically driven single-photon emitters located at the positions where strains are induced by atomic force microscope indentation on a van der Waals heterostructure consisting of graphene, hexagonal boron nitride, and tungsten diselenide. The optical, electrical, and mechanical properties induced by the local strain gradient were systematically analyzed. The emission at the indentation sites exhibits photon antibunching behavior with a g(2)(0) value of ~0.3, intensity saturation, and a linearly cross-polarized doublet, at 4 kelvin. This robust spatial control of electrically driven single-photon emitters will pave the way for the practical implementation of integrated quantum light sources.
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Affiliation(s)
- Jae-Pil So
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hyeonjun Baek
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- Center for Quantum Information, Korea Institute of Science and Technology, Seoul 02841, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hoo-Cheol Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Yoon Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jungkil Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
- Corresponding author.
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20
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Mitterreiter E, Schuler B, Micevic A, Hernangómez-Pérez D, Barthelmi K, Cochrane KA, Kiemle J, Sigger F, Klein J, Wong E, Barnard ES, Watanabe K, Taniguchi T, Lorke M, Jahnke F, Finley JJ, Schwartzberg AM, Qiu DY, Refaely-Abramson S, Holleitner AW, Weber-Bargioni A, Kastl C. The role of chalcogen vacancies for atomic defect emission in MoS 2. Nat Commun 2021; 12:3822. [PMID: 34158488 PMCID: PMC8219741 DOI: 10.1038/s41467-021-24102-y] [Citation(s) in RCA: 55] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Accepted: 05/28/2021] [Indexed: 11/08/2022] Open
Abstract
For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.
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Grants
- EXC 2089/1-390776260 Deutsche Forschungsgemeinschaft (German Research Foundation)
- RTG 2247 Deutsche Forschungsgemeinschaft (German Research Foundation)
- RTG 2247 Deutsche Forschungsgemeinschaft (German Research Foundation)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- JPMJCR15F3 MEXT | JST | Core Research for Evolutional Science and Technology (CREST)
- JPMJCR15F3 MEXT | JST | Core Research for Evolutional Science and Technology (CREST)
- JPMXP0112101001 Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- JP20H00354 Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- JPMXP0112101001 Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- Nanosystems Initiative Munich (NIM) Bavaria California Technology Center (BaCaTeC)
- Alexander von Humboldt-Stiftung (Alexander von Humboldt Foundation)
- INCITE, Contract No. DE-AC05-00OR22725
- Bavaria California Technology Center (BaCaTeC) TUM International Graduate School of Science and Engineering (IGSSE)
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Affiliation(s)
- Elmar Mitterreiter
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Bruno Schuler
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- nanotech@surfaces Laboratory, Empa - Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
| | - Ana Micevic
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Daniel Hernangómez-Pérez
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel
| | - Katja Barthelmi
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | | | - Jonas Kiemle
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Florian Sigger
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Julian Klein
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Edward Wong
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Edward S Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Michael Lorke
- Bremen Center for Computational Materials Science, University of Bremen, Bremen, Germany
- Bremen Institute for Theoretical Physics, University of Bremen, Bremen, Germany
| | - Frank Jahnke
- Bremen Institute for Theoretical Physics, University of Bremen, Bremen, Germany
| | - Johnathan J Finley
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | | | - Diana Y Qiu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, USA
| | - Sivan Refaely-Abramson
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel
| | - Alexander W Holleitner
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.
- Munich Center for Quantum Science and Technology (MCQST), München, Germany.
| | | | - Christoph Kastl
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.
- Munich Center for Quantum Science and Technology (MCQST), München, Germany.
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