1
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Ohki Y, Mochizuki M. Fundamental theory of current-induced motion of magnetic skyrmions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 37:023003. [PMID: 39393399 DOI: 10.1088/1361-648x/ad861b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2024] [Accepted: 10/11/2024] [Indexed: 10/13/2024]
Abstract
Magnetic skyrmions are topological spin textures that appear in magnets with broken spatial inversion symmetry as a consequence of competition between the (anti)ferromagnetic exchange interactions and the Dzyaloshinskii-Moriya interactions in a magnetic field. In the research of spintronics, the current-driven dynamics of skyrmions has been extensively studied aiming at their applications to next-generation spintronic devices. However, current-induced skyrmion motion exhibits diverse behaviors depending on various factors and conditions such as the type of skyrmion, driving mechanism, system geometry, direction of applied current, and type of the magnet. While this variety attracts enormous research interest of fundamental science and enriches their possibilities of technical applications, it is, at the same time, a source of difficulty and complexity that hinders their comprehensive understandings. In this article, we discuss fundamental and systematic theoretical descriptions of current-induced motion of skyrmions driven by the spin-transfer torque and the spin-orbit torque. Specifically, we theoretically describe the behaviors of current-driven skyrmions depending on the factors and conditions mentioned above by means of analyses using the Thiele equation. Furthermore, the results of the analytical theory are visually demonstrated and quantitatively confirmed by micromagnetic simulations using the Landau-Lifshitz-Gilbert-Slonczewski equation. In particular, we discuss dependence of the direction and velocity of motion on the type of skyrmion (Bloch type and Néel type) and its helicity, the system geometry (thin plate and nanotrack), the direction of applied current (length and width direction of the nanotrack) and its spin-polarization orientation, and the type of magnet (ferromagnet and antiferromagnet). The comprehensive theory provided by this article is expected to contribute significantly to research on the manipulation and control of magnetic skyrmions by electric currents for future spintronics applications.
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Affiliation(s)
- Yuto Ohki
- Department of Applied Physics, Waseda University, Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
- Department of Physics and Mathematics, Aoyama Gakuin University, Sagamihara, Kanagawa 229-8558, Japan
| | - Masahito Mochizuki
- Department of Applied Physics, Waseda University, Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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2
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Garrido-Tamayo MA, Saavedra E, Saji C, Guevara U, Pérez LM, Pedraja-Rejas L, Díaz P, Laroze D. Stability and Spin Waves of Skyrmion Tubes in Curved FeGe Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1468. [PMID: 39330625 PMCID: PMC11434351 DOI: 10.3390/nano14181468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2024] [Revised: 08/30/2024] [Accepted: 09/05/2024] [Indexed: 09/28/2024]
Abstract
In this work, we investigate the influence of curvature on the dynamic susceptibility in FeGe nanowires, both curved and straight, hosting a skyrmionic tube texture under the action of an external bias field, using micromagnetic simulations. Our results demonstrate that both the resonance frequencies and the number of resonant peaks are highly dependent on the curvature of the system. To further understand the nature of the spin wave modes, we analyze the spatial distributions of the resonant mode amplitudes and phases, describing the differences among resonance modes observed. The ability to control the dynamic properties and frequencies of these nanostructures underscores their potential application in frequency-selective magnetic devices.
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Affiliation(s)
| | - Eduardo Saavedra
- Departamento de Física, Universidad de Santiago de Chile (USACH), Santiago 9170124, Chile
| | - Carlos Saji
- Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370449, Chile;
| | - Ulises Guevara
- Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (U.G.); (D.L.)
| | - Laura M. Pérez
- Departamento de Ingeniería Industrial y de Sistemas, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (L.M.P.); (L.P.-R.)
| | - Liliana Pedraja-Rejas
- Departamento de Ingeniería Industrial y de Sistemas, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (L.M.P.); (L.P.-R.)
| | - Pablo Díaz
- Departamento de Ciencias Físicas, Universidad de La Frontera, Casilla 54-D, Temuco 4811230, Chile;
| | - David Laroze
- Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (U.G.); (D.L.)
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3
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Zhao L, Hua C, Song C, Yu W, Jiang W. Realization of skyrmion shift register. Sci Bull (Beijing) 2024; 69:2370-2378. [PMID: 38960814 DOI: 10.1016/j.scib.2024.05.035] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 04/15/2024] [Accepted: 05/23/2024] [Indexed: 07/05/2024]
Abstract
The big data explosion demands novel data storage technology. Among many different approaches, solitonic racetrack memory devices hold great promise for accommodating nonvolatile and low-power functionalities. As representative topological solitons, magnetic skyrmions are envisioned as potential information carriers for efficient information processing. While their advantages as memory and logic elements have been vastly exploited from theoretical perspectives, the corresponding experimental efforts are rather limited. These challenges, which are key to versatile skyrmionic devices, will be studied in this work. Through patterning concaved surface topography with designed arrays of indentations on standard Si/SiO2 substrates, we demonstrate that the resultant non-flat energy landscape could lead to the formation of hexagonal and square skyrmion lattices in Ta/CoFeB/MgO multilayers. Based on these films, one-dimensional racetrack devices are subsequently fabricated, in which a long-distance deterministic shifting of skyrmions between neighboring indentations is achieved at room temperature. Through separating the word line and the bit line, a prototype shift register device, which can sequentially generate and precisely shift complex skyrmionic data strings, is presented. The deterministic writing and long-distance shifting of skyrmionic bits can find potential applications in transformative skyrmionic memory, logic as well as the in-memory computing devices.
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Affiliation(s)
- Le Zhao
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Chensong Hua
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Chengkun Song
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Weichao Yu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China.
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China.
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4
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Zhou Y, Li S, Liang X, Zhou Y. Topological Spin Textures: Basic Physics and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312935. [PMID: 38861696 DOI: 10.1002/adma.202312935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 05/24/2024] [Indexed: 06/13/2024]
Abstract
In the face of escalating modern data storage demands and the constraints of Moore's Law, exploring spintronic solutions, particularly the devices based on magnetic skyrmions, has emerged as a promising frontier in scientific research. Since the first experimental observation of skyrmions, topological spin textures have been extensively studied for their great potential as efficient information carriers in spintronic devices. However, significant challenges have emerged alongside this progress. This review aims to synthesize recent advances in skyrmion research while addressing the major issues encountered in the field. Additionally, current research on promising topological spin structures in addition to skyrmions is summarized. Beyond 2D structures, exploration also extends to 1D magnetic solitons and 3D spin textures. In addition, a diverse array of emerging magnetic materials is introduced, including antiferromagnets and 2D van der Waals magnets, broadening the scope of potential materials hosting topological spin textures. Through a systematic examination of magnetic principles, topological categorization, and the dynamics of spin textures, a comprehensive overview of experimental and theoretical advances in the research of topological magnetism is provided. Finally, both conventional and unconventional applications are summarized based on spin textures proposed thus far. This review provides an outlook on future development in applied spintronics.
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Affiliation(s)
- Yuqing Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Shuang Li
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Xue Liang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Yan Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
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5
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Liang X, Cao Y, Yan P, Zhou Y. Asymmetric Magnon Frequency Comb. NANO LETTERS 2024; 24:6730-6736. [PMID: 38787290 DOI: 10.1021/acs.nanolett.4c01423] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
We theoretically show the asymmetric spin wave transmission in a coupled waveguide-skyrmion structure, where the skyrmion acts as an effective nanocavity allowing the whispering gallery modes for magnons. The asymmetry originates from the chiral spin wave mode localized in the circular skyrmion wall. By inputting two-tone excitations and mixing them in the skyrmion wall, we observe a unidirectional output magnon frequency comb propagating in the waveguide with a record number of teeth (>50). This coupled waveguide-cavity structure turns out to be a universal paradigm for generating asymmetric magnon frequency combs, where the cavity can be generalized to other magnetic structures that support the whispering gallery mode of magnons. Our results advance the understanding of the nonlinear interaction between magnons and magnetic textures and open a new pathway to exploring the asymmetric spin wave transmission and to steering the magnon frequency comb.
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Affiliation(s)
- Xue Liang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yunshan Cao
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Peng Yan
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yan Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
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6
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Urrestarazu Larrañaga J, Sisodia N, Guedas R, Pham VT, Di Manici I, Masseboeuf A, Garello K, Disdier F, Fernandez B, Wintz S, Weigand M, Belmeguenai M, Pizzini S, Sousa RC, Buda-Prejbeanu LD, Gaudin G, Boulle O. Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy. NANO LETTERS 2024; 24:3557-3565. [PMID: 38499397 DOI: 10.1021/acs.nanolett.4c00316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current induced manipulation in ultrathin films were first steps toward the realization of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be manipulated by both gate voltages and external magnetic fields, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.
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Affiliation(s)
| | - Naveen Sisodia
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Rodrigo Guedas
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Van Tuong Pham
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Ilaria Di Manici
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Aurélien Masseboeuf
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Kevin Garello
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Florian Disdier
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Bruno Fernandez
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Sebastian Wintz
- Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart, Germany
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany
| | - Markus Weigand
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany
| | - Mohamed Belmeguenai
- LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse, France
| | - Stefania Pizzini
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Ricardo C Sousa
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | | | - Gilles Gaudin
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Olivier Boulle
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
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7
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He B, Jin H, Zheng D, Liu Y, Li J, Hu Y, Wang Y, Zhang J, Peng Y, Wan C, Zhu T, Han X, Zhang S, Yu G. Creation of Room-Temperature Sub-100 nm Antiferromagnetic Skyrmions in an Antiferromagnet IrMn through Interfacial Exchange Coupling. NANO LETTERS 2024; 24:2196-2202. [PMID: 38329428 DOI: 10.1021/acs.nanolett.3c04221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Antiferromagnetic (AFM) skyrmions are magnetic vortices composed of antiparallell-aligned neighboring spins. In stark contrast to conventional skyrmions based on ferromagnetic order, AFM skyrmions have vanished stray fields, higher response frequencies, and rectified translational motion driven by an external force. Therefore, AFM skyrmions promise highly efficient spintronics devices with high bit mobility and density. Nevertheless, the experimental realization of intrinsic AFM skyrmions remains elusive. Here, we show that AFM skyrmions can be nucleated via interfacial exchange coupling at the surface of a room-temperature AFM material, IrMn, exploiting the particular response from uncompensated moments to the thermal annealing and imprinting effects. Further systematic magnetic characterizations validate the existence of such an AFM order at the IrMn/CoFeB interfaces. Such AFM skyrmions have a typical size of 100 nm, which presents pronounced robustness against field and temperature. Our work opens new pathways for magnetic topological devices based on AFM skyrmions.
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Affiliation(s)
- Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haonan Jin
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
| | - Dongfeng Zheng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Yizhou Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jialiang Li
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Yue Hu
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Yuqiang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junwei Zhang
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Yong Peng
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Shilei Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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8
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Zhu K, Bi L, Zhang Y, Zheng D, Yang D, Li J, Tian H, Cai J, Yang H, Zhang Y, Li J. Ultrafast switching to zero field topological spin textures in ferrimagnetic TbFeCo films. NANOSCALE 2024; 16:3133-3143. [PMID: 38258484 DOI: 10.1039/d3nr04529c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
The capability of femtosecond (fs) laser pulses to manipulate topological spin textures on a very short time scale is sparking considerable interest. This article presents the creation of high density zero field topological spin textures by fs laser excitation in ferrimagnetic TbFeCo amorphous films. The topological spin textures are demonstrated to emerge under fs laser pulse excitation through a unique ultrafast nucleation mechanism, rather than thermal effects. Notably, large intrinsic uniaxial anisotropy could substitute the external magnetic field for the creation and stabilization of topological spin textures, which is further verified by the corresponding micromagnetic simulation. The ultrafast switching between topological trivial and nontrivial magnetic states is realized at an optimum magnitude of magnetic field and laser fluence. Our results would broaden the options to generate zero-field topological spin textures from versatile magnetic states and provides a new perspective for ultrafast switching of 0/1 magnetic states in spintronic devices.
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Affiliation(s)
- Kaixin Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Linzhu Bi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongzhao Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dingguo Zheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Huanfang Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Jianwang Cai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Huaixin Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Yangtze River Delta Physics Research Center Co., Ltd., Liyang, Jiangsu, 213300, China
| | - Ying Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Jianqi Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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9
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Meng Y, Meng F, Hou M, Zheng Q, Wang B, Zhu R, Feng C, Yu G. Regulation of interfacial Dzyaloshinskii-Moriya interaction in ferromagnetic multilayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:193001. [PMID: 38286006 DOI: 10.1088/1361-648x/ad2386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 01/29/2024] [Indexed: 01/31/2024]
Abstract
Interfacial Dzyaloshinskii-Moriya interaction (i-DMI) exists in the film materials with inversion symmetry breaking, which can stabilize a series of nonlinear spin structures and control their chirality, such as Néel-type domain wall, magnetic skyrmion and spin spiral. In addition, the strength and chirality of i-DMI are directly related to the dynamic behavior of these nonlinear spin structures. Therefore, regulating the strength and chirality of i-DMI not only has an important scientific significance for enriching spintronics and topological physics, but also has a significant practical value for constructing a new generation of memorizer, logic gate, and brain-like devices with low-power. This review summarizes the research progress on the regulation of i-DMI in ferromagnetic films and provides some prospects for future research.
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Affiliation(s)
- Yufei Meng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Fei Meng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Mingxuan Hou
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Qianqi Zheng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Boyi Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Ronggui Zhu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Chun Feng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Guanghua Yu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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10
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Zhang X, Xia J, Tretiakov OA, Ezawa M, Zhao G, Zhou Y, Liu X, Mochizuki M. Chiral Skyrmions Interacting with Chiral Flowers. NANO LETTERS 2023; 23:11793-11801. [PMID: 38055779 PMCID: PMC10755743 DOI: 10.1021/acs.nanolett.3c03792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/02/2023] [Accepted: 12/04/2023] [Indexed: 12/08/2023]
Abstract
The chiral nature of active matter plays an important role in the dynamics of active matter interacting with chiral structures. Skyrmions are chiral objects, and their interactions with chiral nanostructures can lead to intriguing phenomena. Here, we explore the random-walk dynamics of a thermally activated chiral skyrmion interacting with a chiral flower-like obstacle in a ferromagnetic layer, which could create topology-dependent outcomes. It is a spontaneous mesoscopic order-from-disorder phenomenon driven by the thermal fluctuations and topological nature of skyrmions that exists only in ferromagnetic and ferrimagnetic systems. The interactions between the skyrmions and chiral flowers at finite temperatures can be utilized to control the skyrmion position and distribution without applying any external driving force or temperature gradient. The phenomenon that thermally activated skyrmions are dynamically coupled to chiral flowers may provide a new way to design topological sorting devices.
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Affiliation(s)
- Xichao Zhang
- Department
of Applied Physics, Waseda University, Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
| | - Jing Xia
- Department
of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Oleg A. Tretiakov
- School
of Physics, The University of New South
Wales, Sydney 2052, Australia
| | - Motohiko Ezawa
- Department
of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656, Japan
| | - Guoping Zhao
- College
of Physics and Electronic Engineering, Sichuan
Normal University, Chengdu 610068, China
| | - Yan Zhou
- School
of
Science and Engineering, The Chinese University
of Hong Kong, Shenzhen, Guangdong 518172, China
| | - Xiaoxi Liu
- Department
of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Masahito Mochizuki
- Department
of Applied Physics, Waseda University, Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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11
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Jiang S, Ortalan V. A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2898. [PMID: 37947742 PMCID: PMC10647709 DOI: 10.3390/nano13212898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 10/09/2023] [Accepted: 10/13/2023] [Indexed: 11/12/2023]
Abstract
The milling profiles of single-crystal gallium nitride (GaN) when subjected to focused ion beams (FIBs) using gallium (Ga), xenon (Xe), and helium (He) ion sources were investigated. An experimental analysis via annular dark-field scanning transmission electron microscopy (ADF-STEM) and high-resolution transmission electron microscopy (HRTEM) revealed that Ga-FIB milling yields trenches with higher aspect ratios compared to Xe-FIB milling for the selected ion beam parameters (30 kV, 42 pA), while He-FIB induces local lattice disorder. Molecular dynamics (MD) simulations were employed to investigate the milling process, confirming that probe size critically influences trench aspect ratios. Interestingly, the MD simulations also showed that Xe-FIB generates higher aspect ratios than Ga-FIB with the same probe size, indicating that Xe-FIB could also be an effective option for nanoscale patterning. Atomic defects such as vacancies and interstitials in GaN from He-FIB milling were suggested by the MD simulations, supporting the lattice disorder observed via HRTEM. This combined experimental and simulation approach has enhanced our understanding of FIB milling dynamics and will benefit the fabrication of nanostructures via the FIB technique.
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Affiliation(s)
| | - Volkan Ortalan
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT 06269, USA;
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12
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He B, Tomasello R, Luo X, Zhang R, Nie Z, Carpentieri M, Han X, Finocchio G, Yu G. All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation. NANO LETTERS 2023; 23:9482-9490. [PMID: 37818857 DOI: 10.1021/acs.nanolett.3c02978] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Racetrack memories with magnetic skyrmions have recently been proposed as a promising storage technology. To be appealing, several challenges must still be faced for the deterministic generation of skyrmions, their high-fidelity transfer, and accurate reading. Here, we realize the first proof-of-concept of a 9-bit skyrmion racetrack memory with all-electrical controllable functionalities implemented in the same device. The key ingredient is the generation of a tailored nonuniform distribution of magnetic anisotropy via laser irradiation in order to (i) create a well-defined skyrmion nucleation center, (ii) define the memory cells hosting the information coded as the presence/absence of skyrmions, and (iii) improve the signal-to-noise ratio of anomalous Hall resistance measurements. This work introduces a strategy to unify previous findings and predictions for the development of a generation of racetrack memories with robust control of skyrmion nucleation and position, as well as effective skyrmion electrical detection.
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Affiliation(s)
- Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Riccardo Tomasello
- Department of Electrical and Information Engineering, Politecnico of Bari, Bari 70125, Italy
| | - Xuming Luo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ran Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhuyang Nie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Mario Carpentieri
- Department of Electrical and Information Engineering, Politecnico of Bari, Bari 70125, Italy
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Giovanni Finocchio
- Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina 98166, Italy
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
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13
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Amin OJ, Poole SF, Reimers S, Barton LX, Dal Din A, Maccherozzi F, Dhesi SS, Novák V, Krizek F, Chauhan JS, Campion RP, Rushforth AW, Jungwirth T, Tretiakov OA, Edmonds KW, Wadley P. Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature. NATURE NANOTECHNOLOGY 2023; 18:849-853. [PMID: 37157021 PMCID: PMC10427425 DOI: 10.1038/s41565-023-01386-3] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Accepted: 03/24/2023] [Indexed: 05/10/2023]
Abstract
Topologically protected magnetic textures are promising candidates for information carriers in future memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. These textures-nanoscale whirls in the magnetic order-include skyrmions, half-skyrmions (merons) and their antiparticles. Antiferromagnets have been shown to host versions of these textures that have high potential for terahertz dynamics, deflection-free motion and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin-film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The merons and antimerons are localized on 180° domain walls, and move in the direction of the current pulses. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high-density, high-speed magnetic memory devices.
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Affiliation(s)
- O J Amin
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK.
| | - S F Poole
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - S Reimers
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
- Diamond Light Source, Chilton, UK
- Institut für Physik, Johannes Gutenberg Universität Mainz, Mainz, Germany
| | - L X Barton
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - A Dal Din
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | | | | | - V Novák
- Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic
| | - F Krizek
- Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic
| | - J S Chauhan
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - R P Campion
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - A W Rushforth
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - T Jungwirth
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
- Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic
| | - O A Tretiakov
- School of Physics, The University of New South Wales, Sydney, New South Wales, Australia
| | - K W Edmonds
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
| | - P Wadley
- School of Physics and Astronomy, University of Nottingham, Nottingham, UK
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14
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Balan C, van de Jagt JW, Fassatoui A, Peña Garcia J, Jeudy V, Thiaville A, Bonfim M, Vogel J, Ranno L, Ravelosona D, Pizzini S. Improving Néel Domain Walls Dynamics and Skyrmion Stability Using He Ion Irradiation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2302039. [PMID: 37178408 DOI: 10.1002/smll.202302039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Revised: 04/14/2023] [Indexed: 05/15/2023]
Abstract
Ion irradiation with light ions is an appealing way to finely tune the magnetic properties of thin magnetic films and in particular the perpendicular magnetic anisotropy (PMA). In this work, the effect of He+ irradiation on the magnetization reversal and on the domain wall dynamics of Pt/Co/AlOx trilayers is illustrated. Fluences up to 1.5 × 1015 ions cm-2 strongly decrease the PMA, without affecting neither the spontaneous magnetization nor the strength of the interfacial Dzyaloshinskii-Moriya interaction (DMI). This confirms experimentally the robustness of the DMI interaction against interfacial chemical intermixing, already predicted by theory. In parallel with the decrease of the PMA, a strong decrease of the domain wall depinning field is observed after irradiation. This allows the domain walls to reach large maximum velocities with a lower magnetic field compared to that needed for the pristine films. Decoupling PMA from DMI can, therefore, be beneficial for the design of low energy devices based on domain wall dynamics. When the samples are irradiated with larger He+ fluences, the magnetization gets close to the out-of-plane/in-plane reorientation transition, where ≈100nm size magnetic skyrmions are stabilized. It is observed that as the He+ fluence increases, the skyrmion size decreases while these magnetic textures become more stable against the application of an external magnetic field, as predicted by theoretical models developed for ultrathin films with labyrinthine domains.
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Affiliation(s)
- Cristina Balan
- Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, 38042, France
| | - Johannes W van de Jagt
- Spin-Ion Technologies, 10 Boulevard Thomas Gobert, Palaiseau, 91120, France
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 10 boulevard Thomas Gobert, Palaiseau, 91120, France
| | - Aymen Fassatoui
- Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, 38042, France
| | - Jose Peña Garcia
- Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, 38042, France
| | - Vincent Jeudy
- Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay, 91405, France
| | - André Thiaville
- Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay, 91405, France
| | - Marlio Bonfim
- Dep. de Engenharia Elétrica, Universidade Federal do Parana, Curitiba, PR 81531-990, Brasil
| | - Jan Vogel
- Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, 38042, France
| | - Laurent Ranno
- Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, 38042, France
| | - Dafiné Ravelosona
- Spin-Ion Technologies, 10 Boulevard Thomas Gobert, Palaiseau, 91120, France
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 10 boulevard Thomas Gobert, Palaiseau, 91120, France
| | - Stefania Pizzini
- Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, 38042, France
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15
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Zhao Y, Wang J, Xu L, Yu P, Hou M, Meng F, Xie S, Meng Y, Zhu R, Hou Z, Yang M, Luo J, Wu J, Xu Y, Gao X, Feng C, Yu G. Local Manipulation of Skyrmion Nucleation in Microscale Areas of a Thin Film with Nitrogen-Ion Implantation. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36888898 DOI: 10.1021/acsami.3c00266] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Precise manipulation of skyrmion nucleation in microscale or nanoscale areas of thin films is a critical issue in developing high-efficient skyrmionic memories and logic devices. Presently, the mainstream controlling strategies focus on the application of external stimuli to tailor the intrinsic attributes of charge, spin, and lattice. This work reports effective skyrmion manipulation by controllably modifying the lattice defect through ion implantation, which is potentially compatible with large-scale integrated circuit technology. By implanting an appropriate dose of nitrogen ions into a Pt/Co/Ta multilayer film, the defect density was effectively enhanced to induce an apparent modulation of magnetic anisotropy, consequently boosting the skyrmion nucleation. Furthermore, the local control of skyrmions in microscale areas of the macroscopic film was realized by combining the ion implantation with micromachining technology, demonstrating a potential application in both binary storage and multistate storage. These findings provide a new approach to advancing the functionalization and application of skyrmionic devices.
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Affiliation(s)
- Yongkang Zhao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Junlin Wang
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
| | - Lianxin Xu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Peiyue Yu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China
| | - Mingxuan Hou
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Fei Meng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shuai Xie
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yufei Meng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Ronggui Zhu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Meiyin Yang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China
| | - Jun Luo
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China
| | - Jing Wu
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
- York-Nanjing International Center of Spintronics (YNICS), York University, York YO10 3LT, U.K
| | - Yongbing Xu
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
- York-Nanjing International Center of Spintronics (YNICS), York University, York YO10 3LT, U.K
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Chun Feng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Guanghua Yu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
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16
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Ahrens V, Kiesselbach C, Gnoli L, Giuliano D, Mendisch S, Kiechle M, Riente F, Becherer M. Skyrmions Under Control-FIB Irradiation as a Versatile Tool for Skyrmion Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207321. [PMID: 36255142 DOI: 10.1002/adma.202207321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Revised: 10/11/2022] [Indexed: 06/16/2023]
Abstract
Magnetic data storage and processing offer certain advances over conventional technologies, amongst which nonvolatility and low power operation are the most outstanding ones. Skyrmions are a promising candidate as a magnetic data carrier. However, the sputtering of skyrmion films and the control of the skyrmion nucleation, motion, and annihilation remains challenging. This work demonstrates that using optimized focused ion beam irradiation and annealing protocols enables the skyrmion phase in W/CoFeB/MgO thin films to be accessed easily. By analyzing ion-beam-engineered skyrmion hosting wires, excited by sub-100 ns current pulses, possibilities to control skyrmion nucleation, guide their motion, and control their annihilation unfold. Overall, the key elements needed to develop extensive skyrmion networks are presented.
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Affiliation(s)
- Valentin Ahrens
- Department of Electrical and Computer Engineering, Technical University of Munich, 85748, Garching, Germany
| | - Clara Kiesselbach
- Department of Electrical and Computer Engineering, Technical University of Munich, 85748, Garching, Germany
| | - Luca Gnoli
- Department of Electronics and Telecommunications, Politecnico di Torino, Torino, 10129, Italy
| | - Domenico Giuliano
- Department of Electronics and Telecommunications, Politecnico di Torino, Torino, 10129, Italy
| | - Simon Mendisch
- Department of Electrical and Computer Engineering, Technical University of Munich, 85748, Garching, Germany
| | - Martina Kiechle
- Department of Electrical and Computer Engineering, Technical University of Munich, 85748, Garching, Germany
| | - Fabrizio Riente
- Department of Electronics and Telecommunications, Politecnico di Torino, Torino, 10129, Italy
| | - Markus Becherer
- Department of Electrical and Computer Engineering, Technical University of Munich, 85748, Garching, Germany
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17
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Kern LM, Pfau B, Deinhart V, Schneider M, Klose C, Gerlinger K, Wittrock S, Engel D, Will I, Günther CM, Liefferink R, Mentink JH, Wintz S, Weigand M, Huang MJ, Battistelli R, Metternich D, Büttner F, Höflich K, Eisebitt S. Deterministic Generation and Guided Motion of Magnetic Skyrmions by Focused He +-Ion Irradiation. NANO LETTERS 2022; 22:4028-4035. [PMID: 35577328 PMCID: PMC9137908 DOI: 10.1021/acs.nanolett.2c00670] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2022] [Revised: 05/02/2022] [Indexed: 05/18/2023]
Abstract
Magnetic skyrmions are quasiparticles with nontrivial topology, envisioned to play a key role in next-generation data technology while simultaneously attracting fundamental research interest due to their emerging topological charge. In chiral magnetic multilayers, current-generated spin-orbit torques or ultrafast laser excitation can be used to nucleate isolated skyrmions on a picosecond time scale. Both methods, however, produce randomly arranged skyrmions, which inherently limits the precision on the location at which the skyrmions are nucleated. Here, we show that nanopatterning of the anisotropy landscape with a He+-ion beam creates well-defined skyrmion nucleation sites, thereby transforming the skyrmion localization into a deterministic process. This approach allows control of individual skyrmion nucleation as well as guided skyrmion motion with nanometer-scale precision, which is pivotal for both future fundamental studies of skyrmion dynamics and applications.
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Affiliation(s)
- Lisa-Marie Kern
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
| | - Bastian Pfau
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
- E-mail:
| | - Victor Deinhart
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
- Ferdinand-Braun-Institut
gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
- Helmholtz-Zentrum
für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Michael Schneider
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
| | - Christopher Klose
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
| | - Kathinka Gerlinger
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
| | - Steffen Wittrock
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
| | - Dieter Engel
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
| | - Ingo Will
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
| | - Christian M. Günther
- Technische
Universität Berlin, Zentraleinrichtung Elektronenmikroskopie (ZELMI), 10623 Berlin, Germany
| | - Rein Liefferink
- Radboud
University, Institute for
Molecules and Materials (IMM), 6525 AJ Nijmegen, Netherlands
| | - Johan H. Mentink
- Radboud
University, Institute for
Molecules and Materials (IMM), 6525 AJ Nijmegen, Netherlands
| | - Sebastian Wintz
- Max
Planck Institute for Intelligent Systems, 70569 Stuttgart, Germany
| | - Markus Weigand
- Helmholtz-Zentrum
für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Meng-Jie Huang
- Deutsches
Elektronen-Synchrotron (DESY), 22607 Hamburg, Germany
| | | | - Daniel Metternich
- Helmholtz-Zentrum
für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Felix Büttner
- Helmholtz-Zentrum
für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Katja Höflich
- Ferdinand-Braun-Institut
gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
- Helmholtz-Zentrum
für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Stefan Eisebitt
- Max
Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
- Technische
Universität Berlin, Institut für
Optik und Atomare Physik, 10623 Berlin, Germany
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18
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Improved spin-orbit torque induced magnetization switching efficiency by helium ion irradiation. Sci Rep 2022; 12:3465. [PMID: 35236883 PMCID: PMC8891290 DOI: 10.1038/s41598-022-06960-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Accepted: 02/02/2022] [Indexed: 12/02/2022] Open
Abstract
Increasing the efficiency of spin–orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. Accordingly, there are several studies to alter the magnetic properties and reduce the SOT switching current with helium ion irradiation, but previous researches are focused on its phenomenological changes only. Here, the authors observe the reduction of switching current and analyze its origins. The analyzed major reasons are improved spin Hall angle represented as the changed resistivity of heavy metal layer and the reduction of surface anisotropy energy at interface between heavy metal and ferromagnet. It is confirmed that almost linear relation between changed SHA and Pt resistivity by helium ion irradiation, which is attributed because of the increase in the scattering sources induced by structural distortion during ion penetration. From the calculated power consumption ratio based on the derived parameter, the requiring power decreases according to the degree of ion irradiation. Our results show that helium ion penetration induced layer and interfacial disturbance affects SOT induced magnetization switching current reduction and may provide possibility about helium ion irradiation based superior SOT device engineering.
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19
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Sud A, Tacchi S, Sagkovits D, Barton C, Sall M, Diez LH, Stylianidis E, Smith N, Wright L, Zhang S, Zhang X, Ravelosona D, Carlotti G, Kurebayashi H, Kazakova O, Cubukcu M. Tailoring interfacial effect in multilayers with Dzyaloshinskii-Moriya interaction by helium ion irradiation. Sci Rep 2021; 11:23626. [PMID: 34880294 PMCID: PMC8654828 DOI: 10.1038/s41598-021-02902-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/12/2021] [Accepted: 11/23/2021] [Indexed: 11/13/2022] Open
Abstract
We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He[Formula: see text]) ion irradiation. We report results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the multilayers. Our results show clear evidence of the He[Formula: see text] irradiation effects on the magnetic properties which is consistent with interface modification due to the effects of the He[Formula: see text] irradiation. This external degree of freedom offers promising perspectives to further improve the control of magnetic skyrmions in multilayers, that could push them towards integration in future technologies.
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Affiliation(s)
- A. Sud
- grid.83440.3b0000000121901201London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH UK
| | - S. Tacchi
- grid.9027.c0000 0004 1757 3630Istituto Officina dei Materiali del CNR (CNR-IOM), Sede Secondaria di Perugia, c/o Dipartimento di Fisica e Geologia, Università di Perugia, 06123 Perugia, Italy
| | - D. Sagkovits
- grid.83440.3b0000000121901201London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH UK ,grid.410351.20000 0000 8991 6349National Physical Laboratory, Hampton Road, Teddington, TW11 0LW UK
| | - C. Barton
- grid.410351.20000 0000 8991 6349National Physical Laboratory, Hampton Road, Teddington, TW11 0LW UK
| | - M. Sall
- Spin-Ion Technologies, Palaiseau, France
| | - L. H. Diez
- grid.503099.6Centre de Nanosciences et de Nanotechnologies, Orsay, l̂le-de-France France
| | - E. Stylianidis
- grid.83440.3b0000000121901201London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH UK
| | - N. Smith
- grid.410351.20000 0000 8991 6349National Physical Laboratory, Hampton Road, Teddington, TW11 0LW UK
| | - L. Wright
- grid.410351.20000 0000 8991 6349National Physical Laboratory, Hampton Road, Teddington, TW11 0LW UK
| | - S. Zhang
- grid.45672.320000 0001 1926 5090King Abdullah University of Science and Technology Physical Sciences and Engineering Division, Thuwal, Mecca, Saudi Arabia
| | - X. Zhang
- grid.45672.320000 0001 1926 5090King Abdullah University of Science and Technology Physical Sciences and Engineering Division, Thuwal, Mecca, Saudi Arabia
| | - D. Ravelosona
- Spin-Ion Technologies, Palaiseau, France ,grid.503099.6Centre de Nanosciences et de Nanotechnologies, Orsay, l̂le-de-France France
| | - G. Carlotti
- grid.9027.c0000 0004 1757 3630Dipartimento di Fisica e Geologia, Università di Perugia, Via Pascoli, 06123 Perugia, Italy
| | - H. Kurebayashi
- grid.83440.3b0000000121901201London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH UK
| | - O. Kazakova
- grid.410351.20000 0000 8991 6349National Physical Laboratory, Hampton Road, Teddington, TW11 0LW UK
| | - M. Cubukcu
- grid.83440.3b0000000121901201London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH UK ,grid.410351.20000 0000 8991 6349National Physical Laboratory, Hampton Road, Teddington, TW11 0LW UK
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Ohara K, Zhang X, Chen Y, Wei Z, Ma Y, Xia J, Zhou Y, Liu X. Confinement and Protection of Skyrmions by Patterns of Modified Magnetic Properties. NANO LETTERS 2021; 21:4320-4326. [PMID: 33950694 DOI: 10.1021/acs.nanolett.1c00865] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Magnetic skyrmions are versatile topological excitations that can be used as nonvolatile information carriers. The confinement of skyrmions in channels is fundamental for any application based on the accumulation and transport of skyrmions. Here, we report a method that allows effective position control of skyrmions in designed channels by engineered energy barriers and wells, which is realized in a magnetic multilayer film by harnessing the boundaries of patterns with modified magnetic properties. We experimentally and computationally demonstrate that skyrmions can be attracted or repelled by the boundaries of areas with modified perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction. By fabricating square and stripe patterns with modified magnetic properties, we show the possibility of building reliable channels for confinement, accumulation, and transport of skyrmions, which effectively protect skyrmions from being destroyed at the device edges. Our results are useful for the design of spintronic applications using either static or dynamic skyrmions.
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Affiliation(s)
- Kentaro Ohara
- Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Xichao Zhang
- Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Yinling Chen
- Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Zonhan Wei
- School of Mechanics and Engineering Science, Zhengzhou University, Zhengzhou 450001, China
| | - Yungui Ma
- State Key Lab of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jing Xia
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
| | - Yan Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
| | - Xiaoxi Liu
- Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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