Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

Ultralow-Power Programmable 3D Vertical Phase-Change Memory with Heater-All-Around Configuration

Recent advancements in phase-change memory (PCM) technology have predominantly stemmed from material-level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device-level electrothermal solutions. Thus, the concept of a 3D heater-all-around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed. The embedded thin metallic heater completely encircles the phase-change material, so it promotes highly localized Joule heating with minimal loss. Hence, a low RESET current density of 6-8 MA cm-2 and operation energy of 150-200 pJ are achieved even for a sizable hole diameter of 300 nm. Beyond the conventional 2D scaling of the bottom electrode contact, it accordingly enhances ≈80% of operational energy efficiency compared to planar PCM with an identical contact area. In addition, reliable memory operations of ≈105 cycles and the 3-bits-per-cell multilevel storage despite ultrathin (<10 nm) sidewall deposition of Ge2Sb2Te5 are optimized. The proposed 3D-scaled HAA-PCM architecture holds promise as a universally applicable backbone for emerging phase-change chalcogenides toward high-density, ultralow-power computing units.

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

The excessive power consumption is challenging for phase change memory (PCM) on its way to becoming universal memory in complex hierarchies of memory systems. Here, from the perspective of device structure, by adding a nanocurrent-channel (NCC) layer between the electrode layer and phase change layer, a RESET power consumption reduction by more than 95% and 10 times faster SET speed were realized simultaneously. Through the first principle calculations, Au and SiO2 were screened as the metal and insulating matrix material of NCC layer, respectively. Our PCM device with a Au-SiO2 NCC layer shows an ultralow RESET power consumption, down to 381 fJ, and an ultrafast SET speed (8 ns). Much higher current density near NCC in the phase change layer and thermal barrier effect of insulating matrix material were confirmed by finite element analysis (FEA), and the role of Au nanochannels was revealed by transmission electron microscopy (TEM). Our NCC layer structure provides a simple and practicable method to significantly decrease PCM power consumption.

Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

Phase-change materials such as Ge-Sb-Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random-access memory (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF ratio and the large Joule heating energy required for the RESET process (amorphization) significantly limit the storage density. This study proposes a phase-change nitride, CrN, with a much wider programming window (ON/OFF ratio more than 105) and lower RESET energy (one order of magnitude reduction from GST). High-resolution transmission electron microscopy revealed a phase-change from the low-resistance cubic CrN phase into the highly resistive hexagonal CrN2 phase induced by the Soret-effect. The proposed phase-change nitride could greatly expand the scope of conventional phase-change chalcogenides and offer a strategy for the next-generation of PCRAM, enabling a large ON/OFF ratio (∼105), low switching energy (∼100 pJ), and fast operation (∼30 ns).

Phase Change Heterostructure Memory with Oxygen-Doped Sb2Te3 Layers for Improved Durability and Reliability through Nano crystalline Island Formation

Phase-change random access memory represents a notable advancement in nonvolatile memory technology; however, it faces challenges in terms of thermal stability and reliability, hindering its broader application. To mitigate these issues, doping and structural modification techniques such as phase-change heterostructures (PCH) are widely studied. Although doping typically enhances thermal stability, it can adversely affect the switching speed. Structural modifications such as PCH have struggled to sustain stable performance under high atmospheric conditions. In this study, these challenges are addressed by synergizing oxygen-doped Sb2Te3 (OST) with PCH technology. This study presents a novel approach in which OST significantly improves the crystallization temperature, power efficiency, and cyclability. Subsequently, the integration of the PCH technology bolsters the switching speed and further amplifies the device's reliability and endurance by refining the grain size (≈7 nm). The resultant OST-PCH devices exhibit exceptional performance metrics, including a drift coefficient of 0.003 in the RESET state, endurance of ≈4 × 108 cycles, an switching speed of 300 ns, and 67.6 pJ of RESET energy. These findings suggest that the OST-PCH devices show promise for integration into embedded systems, such as those found in automotive applications and Internet of Things devices.

Phase-change memory via a phase-changeable self-confined nano-filament

Phase-change memory (PCM) has been considered a promising candidate for solving von Neumann bottlenecks owing to its low latency, non-volatile memory property and high integration density1,2. However, PCMs usually require a large current for the reset process by melting the phase-change material into an amorphous phase, which deteriorates the energy efficiency2-5. Various studies have been conducted to reduce the operation current by minimizing the device dimensions, but this increases the fabrication cost while the reduction of the reset current is limited6,7. Here we show a device for reducing the reset current of a PCM by forming a phase-changeable SiTex nano-filament. Without sacrificing the fabrication cost, the developed nano-filament PCM achieves an ultra-low reset current (approximately 10 μA), which is about one to two orders of magnitude smaller than that of highly scaled conventional PCMs. The device maintains favourable memory characteristics such as a large on/off ratio, fast speed, small variations and multilevel memory properties. Our finding is an important step towards developing novel computing paradigms for neuromorphic computing systems, edge processors, in-memory computing systems and even for conventional memory applications.

Thermal Conductivity Enhancement of Polymeric Composites Using Hexagonal Boron Nitride: Design Strategies and Challenges

With the integration and miniaturization of chips, there is an increasing demand for improved heat dissipation. However, the low thermal conductivity (TC) of polymers, which are commonly used in chip packaging, has seriously limited the development of chips. To address this limitation, researchers have recently shown considerable interest in incorporating high-TC fillers into polymers to fabricate thermally conductive composites. Hexagonal boron nitride (h-BN) has emerged as a promising filler candidate due to its high-TC and excellent electrical insulation. This review comprehensively outlines the design strategies for using h-BN as a high-TC filler and covers intrinsic TC and morphology effects, functionalization methods, and the construction of three-dimensional (3D) thermal conduction networks. Additionally, it introduces some experimental TC measurement techniques of composites and theoretical computational simulations for composite design. Finally, the review summarizes some effective strategies and possible challenges for the design of h-BN fillers. This review provides researchers in the field of thermally conductive polymeric composites with a comprehensive understanding of thermal conduction and constructive guidance on h-BN design.

Significantly Improve the Thermal Conductivity and Dielectric Performance of Epoxy Composite by Introducing Boron Nitride and POSS

Dielectric materials with superb thermal and electrical properties are highly desired for high-voltage electrical equipment and advanced electronics. Here, we propose a novel strategy to improve the performance of epoxy composites by employing boron nitride nanosheets (BNNSs) and γ-glycidyl ether oxypropyl sesimoxane (G-POSS) as functional fillers. The resultant ternary epoxy composites exhibit high electrical resistivity (1.63 × 1013 Ω·cm) and low dielectric loss (<0.01) due to the ultra-low dielectric constants of cage-structure of G-POSS. In addition, a high thermal conductivity of 0.3969 W·m-1·K-1 is achieved for the epoxy composites, which is 114.66% higher than that of pure epoxy resin. This can be attributed to the high aspect ratio and excellent thermally conductive characteristics of BNNSs, promoting phonon propagation in the composites. Moreover, the epoxy composite simultaneously possesses remarkable dynamic mechanical properties and thermal stability. It is believed that this work provides a universal strategy for designing and fabricating multifunctional composites using a combination of different functional fillers.

Nanoencapsulation of Organic Phase Change Materials in Poly(3,4-Ethylenedioxythiophene) for Energy Storage and Conversion

This work focuses on the encapsulation of two organic phase change materials (PCMs), hexadecane and octadecane, through the formation of nanocapsules of the conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) obtained by oxidative polymerization in miniemulsion. The energy storage capacity of nanoparticles is studied by preparing polymer films on supporting substrates. The results indicate that the prepared systems can store and later release thermal energy in the form of latent heat efficiently, which is of vital importance to increase the efficiency of future thermoelectric devices.

Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective

Deep learning has become ubiquitous, touching daily lives across the globe. Today, traditional computer architectures are stressed to their limits in efficiently executing the growing complexity of data and models. Compute-in-memory (CIM) can potentially play an important role in developing efficient hardware solutions that reduce data movement from compute-unit to memory, known as the von Neumann bottleneck. At its heart is a cross-bar architecture with nodal non-volatile-memory elements that performs an analog multiply-and-accumulate operation, enabling the matrix-vector-multiplications repeatedly used in all neural network workloads. The memory materials can significantly influence final system-level characteristics and chip performance, including speed, power, and classification accuracy. With an over-arching co-design viewpoint, this review assesses the use of cross-bar based CIM for neural networks, connecting the material properties and the associated design constraints and demands to application, architecture, and performance. Both digital and analog memory are considered, assessing the status for training and inference, and providing metrics for the collective set of properties non-volatile memory materials will need to demonstrate for a successful CIM technology.

NbTe4 Phase-Change Material: Breaking the Phase-Change Temperature Balance in 2D Van der Waals Transition-Metal Binary Chalcogenide

2D van der Waals (vdW) transition metal di-chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large-area 2D vdW TMD fabrication, but the high melting point (typically Tm > 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low-Tm 2D vdW TM tetra-chalcogenides and identifies NbTe4 as a promising candidate with an ultra-low Tm of around 447 °C (onset temperature). As-grown NbTe4 forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low Tm and a high crystallization temperature Tc can resolve important issues facing current phase-change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe4 holds great promise as a potential solution to these issues.

Real-Time Measure of the Lattice Temperature of a Semiconductor Heterostructure Laser via an On-Chip Integrated Graphene Thermometer

The on-chip integration of two-dimensional nanomaterials, having exceptional optical, electrical, and thermal properties, with terahertz (THz) quantum cascade lasers (QCLs) has recently led to wide spectral tuning, nonlinear high-harmonic generation, and pulse generation. Here, we transfer a large area (1 × 1 cm²) multilayer graphene (MLG), to lithographically define a microthermometer, on the bottom contact of a single-plasmon THz QCL to monitor, in real-time, its local lattice temperature during operation. We exploit the temperature dependence of the MLG electrical resistance to measure the local heating of the QCL chip. The results are further validated through microprobe photoluminescence experiments, performed on the front-facet of the electrically driven QCL. We extract a heterostructure cross-plane conductivity of k_⊥= 10.2 W/m·K, in agreement with previous theoretical and experimental reports. Our integrated system endows THz QCLs with a fast (∼30 ms) temperature sensor, providing a tool to reach full electrical and thermal control on laser operation. This can be exploited, inter alia, to stabilize the emission of THz frequency combs, with potential impact on quantum technologies and high-precision spectroscopy.

Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application

High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the lithography process and the micro-loading effect in the etching process. In this study, we demonstrate an approach to fabricate high density phase change material arrays with half-pitch down to around 70 nm by the co-optimization of lithography and plasma etching process. The focused-energy matrix was performed to improve the pattern process window of phase change material on a 12-inch wafer. A variety of patternings from an isolated line to a dense pitch line were investigated using immersion lithography system. The collapse of the edge line is observed due to the OPE induced shrinkage in linewidth, which is deteriorative as the patterning density increases. The sub-resolution assist feature (SRAF) was placed to increase the width of the lines at both edges of each patterning by taking advantage of the optical interference between the main features and the assistant features. The survival of the line at the edges is confirmed with around a 70 nm half-pitch feature in various arrays. A uniform etching profile across the pitch line pattern of phase change material was demonstrated in which the micro-loading effect and the plasma etching damage were significantly suppressed by co-optimizing the etching parameters. The results pave the way to achieve high density device arrays with improved uniformity and reliability for mass storage applications.

Atomic Layer Deposition of Sb2 Te3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

Atomic layer deposition (ALD) of Sb₂ Te₃ /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO₂ insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb₂ Te₃ enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge₂ Sb₂ Te₅ alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge₂ Sb₂ Te₅ alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.

Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device

Data recording based on the phase transition between amorphous and crystalline phases in a phase-change material (PCM) generally consumes a large amount of operation energy. Heat confinement and scaling down of the contact area between the PCM and electrode are effective strategies for reducing the operation energy in the memory device. Contrary to conventional PCM, such as Ge-Sb-Te compounds (GST), Cr₂Ge₂Te₆ (CrGT) exhibits low thermal conductivity and low-energy memory operation characteristics even in a relatively large contact area. Herein, we show that the operation energy of the CrGT-based memory device is greatly reduced by scaling down. Based on the present results, an operation energy at subpico J order, which was achieved using carbon nanotubes or graphene nanoribbon in the GST-based device, can be realized in the contact area comparable to the product level in the CrGT-based device. The numerical simulation suggests that small thermal and electrical conductivities enhance the thermal efficiency, resulting in a small operation energy for amorphization. It was also found that the residual metastable phase after the amorphization process increased the operation energy for crystallization by the simulation. In other words, these results indicate that further small operation energy can be realized in the CrGT-based device by reducing the metastable phase volume.

Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications

Phase-change optical device has recently gained tremendous interest due to its ultra-fast transmitting speed, multiplexing and large bandwidth. However, majority of phase-change optical devices are only devoted to on-chip components such as optical tensor core and optical main memory, while developing a secondary storage memory in an optical manner is rarely reported. To address this issue, we propose a novel phase-change optical memory based on plasmonic resonance effects for secondary storage applications. Such design makes use of the plasmonic dimer nanoantenna to generate plasmonic resonance inside the chalcogenide alloy, and thus enables the performance improvements in terms of energy consumption and switching speed. It is found that choosing height, radius, and separation of the plasmonic nanoantenna as 10 nm, 150 nm, and 10 nm, respectively, allows for a write/erase energies of 100 and 240 pJ and a write/erase speed of 10 ns for crystallization and amorphization processes, respectively. Such performance merits encouragingly prevail conventional secondary storage memories and thus pave a route towards the advent of all-optical computer in near future.

Low Energy Switching of Phase Change Materials Using a 2D Thermal Boundary Layer

The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM energy inefficient. Here, we improve the energy efficiency of the laser-induced phase transitions by inserting a layer of two-dimensional (2D) material, either MoS₂ or WS₂, between the silica or silicon substrate and the PCM. The 2D material reduces the required laser power by at least 40% during the amorphization (RESET) process, depending on the substrate. Thermal simulations confirm that both MoS₂ and WS₂ 2D layers act as a thermal barrier, which efficiently confines energy within the PCM layer. Remarkably, the thermal insulation effect of the 2D layer is equivalent to a ∼100 nm layer of SiO₂. The high thermal boundary resistance induced by the van der Waals (vdW)-bonded layers limits the thermal diffusion through the layer interface. Hence, 2D materials with stable vdW interfaces can be used to improve the thermal efficiency of PCM-tuned Si photonic devices. Furthermore, our waveguide simulations show that the 2D layer does not affect the propagating mode in the Si waveguide; thus, this simple additional thin film produces a substantial energy efficiency improvement without degrading the optical performance of the waveguide. Our findings pave the way for energy-efficient laser-induced structural phase transitions in PCM-based reconfigurable photonic devices.

Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics

Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and chalcogenides when there is a change in external conditions such as temperature and pressure. Along with phase transitions in these phase change materials (PCMs) come dramatic contrasts in various physical properties, which can be engineered to manipulate electrons, photons, polaritons, and phonons at the nanoscale, offering new opportunities for reconfigurable, active nanodevices. In this review, we particularly discuss phase-transition-enabled active nanotechnologies in nonvolatile electrical memory, tunable metamaterials, and metasurfaces for manipulation of both free-space photons and in-plane polaritons, and multifunctional emissivity control in the infrared (IR) spectrum. The fundamentals of PCMs are first introduced to explain the origins and principles of phase transitions. Thereafter, we discuss multiphysical nanodevices for electronic, photonic, and thermal management, attesting to the broad applications and exciting promises of PCMs. Emerging trends and valuable applications in all-optical neuromorphic devices, thermal data storage, and encryption are outlined in the end.

All-fiber nonvolatile broadband optical switch using an all-optical method

Optical switches based on phase change materials have enormous application potential in optical logic circuits and optical communication systems. Integration of all-optical switching devices with optical fibers is a promising approach for realizing practical applications in enabling the optical fiber to transmit and process signals simultaneously. We describe an all-fiber nonvolatile broadband optical switch using an all-optical method. We use a single optical pulse to modulate the phase change material deposited on the tapered fiber to achieve logical control of the transmitted light. The response time of our optical switch is 80 ns for SET and 200 ns for RESET. Our optical switches can operate in the C-band (1530-1565 nm). The optical switching contrast is 40%. Our approach paves the way for all-optical nonvolatile fiber optic communication.

Designing Conductive-Bridge Phase-Change Memory to Enable Ultralow Programming Power

Phase-change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase-change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking "nano-bridges" that link up the crystalline domains into a conductive path. This conductive-bridge switching mechanism thus only involves nanometer-scale volume in programming, despite of the large areas in contact with the electrodes. The pore-like devices based on spontaneously phase-separated Ge13 Sb71 O16 alloy enable a record-low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing.

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge₂Sb₂Te₅ (GST); however, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such an SL. Here we explore the electrical and thermal transport of SLs with deposited Sb₂Te₃ and GeTe alternating layers of various thicknesses. We find up to an approximately four-fold reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared with polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (∼2000×) between the in-plane and cross-plane directions due to the weakly interacting van der Waals-like gaps. This work uncovers electrothermal transport in SLs based on Sb₂Te₃ and GeTe for the improved design of low-power PCM.

Emerging 2D Memory Devices for In-Memory Computing

It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.

Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition

Interfaces govern thermal transport in a variety of nanostructured systems such as FinFETs, interconnects, and vias. Thermal boundary resistances, however, critically depend on the choice of materials, nanomanufacturing processes and conditions, and the planarity of interfaces. In this work, we study the interfacial thermal transport between a nonreactive metal (Pt) and a dielectric by engineering two differing bonding characters: (i) the mechanical adhesion/van der Waals bonding offered by the physical vapor deposition (PVD) and (ii) the chemical bonding generated by plasma-enhanced atomic layer deposition (PEALD). We introduce 40-cycle (∼2 nm thick), nearly continuous PEALD Pt films between 98 nm PVD Pt and dielectric materials (8.0 nm TiO₂/Si and 11.0 nm Al₂O₃/Si) treated with either O₂ or O₂ + H₂ plasma to modulate their bonding strengths. By correlating the treatments through thermal transport measurements using time-domain thermoreflectance (TDTR), we find that the thermal boundary resistances are consistently reduced with the same increased treatment complexity that has been demonstrated in the literature to enhance mechanical adhesion. For samples on TiO₂ (Al₂O₃), reductions in thermal resistance are at least 4% (10%) compared to those with no PEALD Pt at all, but could be as large as 34% (42%) given measurement uncertainties that could be improved with thinner nucleation layers. We suspect the O₂ plasma generates stronger covalent bonds to the substrate, while the H₂ plasma strips the PEALD Pt of contaminants such as carbon that gives rise to a less thermally resistive heat conduction pathway.

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding PCM thermal properties at length scales close to the memory cell dimensions. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in interfacial thermal resistance as GST transitions from cubic to hexagonal crystal structure, resulting in a factor of 4 reduction in the effective thermal conductivity. Simulations reveal that interfacial resistance between PCM and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~ 40% and ~ 50%, respectively. These thermal insights present a new opportunity to reduce power and operating currents in PCMs.

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

Carbon (C)-doped Ge₂Sb₂Te₅ material is a potential candidate in phase change random access memory (PCRAM) because of its superb thermal stability and ultrahigh cycle endurance. Unfortunately, the role and distribution evolution of C-dopant is still not fully understood, especially in practical industrial devices. In this report, with the aid of advanced spherical aberration corrected transmission electron microscopy, the mechanism of microstructure evolution manipulated by C-dopant is clearly defined. The grain-inner C atoms distinctly increase cationic migration energy barriers, which is the fundamental reason for promoting the thermal stability of metastable face-centered-cubic phase and postponing its transition to the hexagonal structure. By current pulses stimulation, the stochastic grain-outer C clusters tend to aggregate in the active area by breaking C-Ge bonding; thus, grain growth and elemental segregation are effectively suppressed to improve device reliability, for example, lower SET resistance, shorter SET time, and enlarged RESET/SET ratio. In short, the visual distribution variations of C-dopant can manipulate the performance of the PCRAM device, having much broader implications for optimizing its microstructure transition and understanding C-doped material system.

Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic, or electro-optic effects, such systems usually exhibit limited reconfigurability along with high-energy consumption and large footprints. These challenges can be addressed by resorting to chalcogenide phase-change materials (PCMs) such as Ge₂Sb₂Te₅ (GST) that provide a substantial optical contrast in a self-holding fashion upon phase transitions. However, current PCM-based integrated photonic applications are limited to single devices or simple PICs because of the poor scalability of the optical or electrical self-heating actuation approaches. Thermal-conduction heating via external electrical heaters, instead, allows large-scale integration and large-area switching, but fast and energy-efficient electrical control is yet to be achieved. Here, we model electrical switching of GST-clad-integrated nanophotonic structures with graphene heaters based on the programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and high in-plane thermal conductivity of graphene, the proposed structures exhibit a high switching speed of ∼80 MHz and a high energy efficiency of 19.2 aJ/nm³ (6.6 aJ/nm³) for crystallization (amorphization) while achieving complete phase transitions to ensure strong attenuation (∼6.46 dB/μm) and optical phase (∼0.28 π/μm at 1550 nm) modulation. Compared with indium tin oxide and silicon p-i-n heaters, the structures with graphene heaters display two orders of magnitude higher figure of merits for heating and overall performance. Our work facilitates the analysis and understanding of the thermal-conduction heating-enabled phase transitions on PICs and supports the development of future large-scale PCM-based electronic-photonic systems.

Y-Doped Sb2Te3 Phase-Change Materials: Toward a Universal Memory

The disadvantages of high power consumption and slow operating speed hinder the application of phase-change materials (PCMs) for a universal memory. In this work, based on a rigorous experimental scheme, we synthesized a series of Y_xSb_2-xTe₃ (0 ≤ x ≤ 0.333) PCMs and demonstrated that Y_0.25Sb_1.75Te₃ (YST) is an excellent candidate material for the universal phase-change memory. This YST PCM, even being integrated into a conventional T-shaped device, exhibits an ultralow reset power consumption of 1.3 pJ and a competitive fast set speed of 6 ns. The ultralow power consumption is attributed to the Y-reduced thermal and electrical conductivity, while the maintained crystal structure of Sb₂Te₃ and the grain refinement provide the competitive fast crystallization speed. This work highlights a novel way to obtain new PCMs with lower power consumption and competitive fast speed toward a universal memory.

Localized Heating and Switching in MoTe2-Based Resistive Memory Devices

Two-dimensional (2D) materials have recently been incorporated into resistive memory devices because of their atomically thin nature, but their switching mechanism is not yet well understood. Here we study bipolar switching in MoTe₂-based resistive memory of varying thickness and electrode area. Using scanning thermal microscopy (SThM), we map the surface temperature of the devices under bias, revealing clear evidence of localized heating at conductive "plugs" formed during switching. The SThM measurements are correlated to electro-thermal simulations, yielding a range of plug diameters (250 to 350 nm) and temperatures at constant bias and during switching. Transmission electron microscopy images reveal these plugs result from atomic migration between electrodes, which is a thermally-activated process. However, the initial forming may be caused by defect generation or Te migration within the MoTe₂. This study provides the first thermal and localized switching insights into the operation of such resistive memory and demonstrates a thermal microscopy technique that can be applied to a wide variety of traditional and emerging memory devices.

Understanding the effect of dry etching on nanoscale phase-change memory

PCM (phase-change memory) is an important class of data storage, operating based on the Joule heating-induced reversible switching of chalcogenide alloys. Nanoscale PCM often requires advanced microfabrication techniques such as dry (plasma) etching, but the possible impacts of process damages or imperfections on the device performance still remain relatively unexplored. This is critical because some chemical etching species are known to cause over-etching with rough edge onto the sidewall of a phase-change material. It is also possible that the phase-change material experiences a composition change due to etching-induced re-deposition of by-products or thermal stress. In this study, a finite-element simulation is performed to understand the effect of dry etching on the RESET characteristics of a nanoscale PCM device to provide a guideline on the PCM manufacturing and cell design.

Graphene and two-dimensional materials for silicon technology

The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.

Memristive devices based on emerging two-dimensional materials beyond graphene

With the explosion of data in the information universe and the approaching of fundamental limits in silicon-based flash memories, the exploration of new device architectures and alternative materials is necessary for next-generation memory technology. Accordingly, emerging two-dimensional (2D) material-based memristive devices have attracted increasing attention due to their unique properties and great potential in flexible and wearable devices, and even neuromorphic computing systems. Herein, we provide an overview of the recent progress on memristive devices based on 2D materials beyond graphene. The device structures and choice of active materials and electrodes materials are summarized for various types of 2D material-based memristive devices. Following the discussion and classification on the device performances and mechanisms, the challenges and perspectives on future research based on 2D materials are also presented.

Integration of bulk materials with two-dimensional materials for physical coupling and applications

Hybrid heterostructures are essential for functional device systems. The advent of 2D materials has broadened the material set beyond conventional 3D material-based heterostructures. It has triggered the fundamental investigation and use in applications of new coupling phenomena between 3D bulk materials and 2D atomic layers that have unique van der Waals features. Here we review the state-of-the-art fabrication of 2D and 3D heterostructures, present a critical survey of unique phenomena arising from forming 3D/2D interfaces, and introduce their applications. We also discuss potential directions for research based on these new coupled architectures.

Nonvolatile Memories Based on Graphene and Related 2D Materials

The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.

Dynamics of GeSbTe phase-change nanoparticles deposited on graphene

Phase-change Ge₂Sb₂Te₅ nanoparticles (NPs), that are promising for next-generation phase-change memory and other emerging optoelectronic applications, have been deposited on graphene support layers and analyzed using advanced transmission electron microscopy techniques allowing high quality atomic resolution imaging at accelerating voltages as low as 40 kV. The deposition results in about three times higher NP coverage on suspended graphene than on graphene containing an amorphous background support. We attribute this to the variation in surface energy of suspended and supported graphene, indicating that the former harvests NPs more effectively. Hydrocarbon contamination on the graphene profoundly enhances the mobility of the NP atoms and after prolonged (weeks) exposure to air resulted in more severe oxidation and spreading of NPs on the suspended graphene than on supported graphene because the network of hydrocarbons develops more extensively on the suspended rather than on the supported graphene. Due to this oxidation, GeO _x shells are formed out of NPs having a uniform composition initially. The present work provides new insights into the structure and stability of phase-change NPs, graphene and their combinations.

MB-CNN: Memristive Binary Convolutional Neural Networks for Embedded Mobile Devices

Applications of neural networks have gained significant importance in embedded mobile devices and Internet of Things (IoT) nodes. In particular, convolutional neural networks have emerged as one of the most powerful techniques in computer vision, speech recognition, and AI applications that can improve the mobile user experience. However, satisfying all power and performance requirements of such low power devices is a significant challenge. Recent work has shown that binarizing a neural network can significantly improve the memory requirements of mobile devices at the cost of minor loss in accuracy. This paper proposes MB-CNN, a memristive accelerator for binary convolutional neural networks that perform XNOR convolution in-situ novel 2R memristive data blocks to improve power, performance, and memory requirements of embedded mobile devices. The proposed accelerator achieves at least 13.26 × , 5.91 × , and 3.18 × improvements in the system energy efficiency (computed by energy × delay) over the state-of-the-art software, GPU, and PIM architectures, respectively. The solution architecture which integrates CPU, GPU and MB-CNN outperforms every other configuration in terms of system energy and execution time.

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions

In this study, bipolar memristive behaviors were systematically characterized in Ag/Sb2Te3/Ag hetero-junctions. By using in situ Raman and photoluminescence spectroscopy, a direct observation of the bonding environment and band structure confirmed that resistive switches are strongly related to the electronic valence changes in Sb2Te3 and the formation of Schottky barriers at Ag/Sb2Te3 interfaces. Band movement of Sb2Te3 acquired by first-principles calculations also supports the electrostatic barrier charging as a memristive mechanism of Ag/Sb2Te3/Ag heterocells. Independent resistance-switching behaviors that can be utilized in both amorphous and crystalline Sb2Te3 lead to multiple resistance values with a large memory window (104-105) and low read voltage (∼0.2 V), giving rise to a unique multi-level memory concept. This study based on Ag/Sb2Te3/Ag hetero-junctions offers a significant understanding to promote the use of Sb2Te3 and other chalcogenide memristors as promising candidates for compatible high-density memory applications.

Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb₄-SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb₂Se₃ phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb₄-SbSe thin film.

Can conventional phase-change memory devices be scaled down to single-nanometre dimensions?

The scaling potential of 'mushroom-type' phase-change memory devices is evaluated, down to single-nanometre dimensions, using physically realistic simulations that combine electro-thermal modelling with a Gillespie Cellular Automata phase-transformation approach. We found that cells with heater contact sizes as small as 6 nm could be successfully amorphized and re-crystallized (RESET and SET) using moderate excitation voltages. However, to enable the efficient formation of amorphous domes during RESET in small cells (heater contact diameters of 10 nm or less), it was necessary to improve the thermal confinement of the cell to reduce heat loss via the electrodes. The resistance window between the SET and RESET states decreased as the cell size reduced, but it was still more than an order of magnitude even for the smallest cells. As expected, the RESET current reduced as the cells got smaller; indeed, RESET current scaled with the inverse of the heater contact diameter and ultra-small RESET currents of only 19 μA were achieved for the smallest cells. Our results show that the conventional mushroom-type phase-change cell architecture is scalable and operable in the sub-10nm region.