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Yan Q, Kar S, Chowdhury S, Bansil A. The Case for a Defect Genome Initiative. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303098. [PMID: 38195961 DOI: 10.1002/adma.202303098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 08/12/2023] [Indexed: 01/11/2024]
Abstract
The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.
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Affiliation(s)
- Qimin Yan
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USA
| | - Sugata Chowdhury
- Department of Physics and Astrophysics, Howard University, Washington, DC 20059, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
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2
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Naclerio AE, Kidambi PR. A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207374. [PMID: 36329667 DOI: 10.1002/adma.202207374] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.
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Affiliation(s)
- Andrew E Naclerio
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Piran R Kidambi
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, 37212, USA
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3
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Zhang Z, Liu P, Song Y, Hou Y, Xu B, Liao T, Zhang H, Guo J, Sun Z. Heterostructure Engineering of 2D Superlattice Materials for Electrocatalysis. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204297. [PMID: 36266983 PMCID: PMC9762311 DOI: 10.1002/advs.202204297] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Revised: 09/23/2022] [Indexed: 06/16/2023]
Abstract
Exploring low-cost and high-efficient electrocatalyst is an exigent task in developing novel sustainable energy conversion systems, such as fuel cells and electrocatalytic fuel generations. 2D materials, specifically 2D superlattice materials focused here, featured highly accessible active areas, high density of active sites, and high compatibility with property-complementary materials to form heterostructures with desired synergetic effects, have demonstrated to be promising electrocatalysts for boosting the performance of sustainable energy conversion and storage devices. Nevertheless, the reaction kinetics, and in particular, the functional mechanisms of the 2D superlattice-based catalysts yet remain ambiguous. In this review, based on the recent progress of 2D superlattice materials in electrocatalysis applications, the rational design and fabrication of 2D superlattices are first summarized and the application of 2D superlattices in electrocatalysis is then specifically discussed. Finally, perspectives on the current challenges and the strategies for the future design of 2D superlattice materials are outlined. This review attempts to establish an intrinsic correlation between the 2D superlattice heterostructures and the catalytic properties, so as to provide some insights into developing high-performance electrocatalysts for next-generation sustainable energy conversion and storage.
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Affiliation(s)
- Zhen Zhang
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Peizhi Liu
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Yanhui Song
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Ying Hou
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Bingshe Xu
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
- Materials Institute of Atomic and Molecular ScienceShaanxi University of Science & TechnologyXi'an710021P. R. China
| | - Ting Liao
- School of MechanicalMedical and Process EngineeringQueensland University of TechnologyBrisbaneQLD4000Australia
| | - Haixia Zhang
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Junjie Guo
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Ziqi Sun
- School of Chemistry and PhysicsQueensland University of TechnologyBrisbaneQLD4000Australia
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4
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Zuo S, Lan Y, Luo J, Zhou F, Xu L, Xie S, Wei X, Zhou L, Ma L, Li X, Yin C. Angular-Shaped Boron Nitride Nanosheets with a High Aspect Ratio to Improve the Out-of-Plane Thermal Conductivity of Polyimide Composite Films. ACS OMEGA 2022; 7:43273-43282. [PMID: 36467912 PMCID: PMC9713879 DOI: 10.1021/acsomega.2c06013] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2022] [Accepted: 11/03/2022] [Indexed: 06/17/2023]
Abstract
Polyimide/boron nitride nanosheet (PI/BNNS) composite films have potential applications in the field of electrical devices due to the superior thermal conductivity and outstanding insulating properties of the boron nitride nanosheet. In this study, the boron nitride nanosheet (BNNS-t) was prepared by the template method using sodium chloride as the template, and B2O3 and flowing ammonia as the boron and nitrogen sources, respectively. Then, the PI/BNNS-t composite films were investigated with different loading of BNNS-t as thermally conductive fillers. The results show that BNNS-t has a high aspect ratio and a uniform lateral dimension, with a large dimension and a thin thickness, and there are a few nanosheets with angular shapes in the as-obtained BNNS-t. The synergistic effect of the above characteristics for BNNS-t is beneficial to constructing the three-dimensional heat conduction network of the PI/BNNS-t composite films, which can significantly improve the out-of-plane thermal conduction properties. And then, the out-of-plane thermal conductivity of the PI/BNNS-t composite film achieves 0.67 W m-1 K-1 at 40% loading, which is nearly 3.5 times that of the PI film.
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Affiliation(s)
- Song Zuo
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Yu Lan
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Jinpeng Luo
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Fei Zhou
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Lexiang Xu
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Shaoxiong Xie
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Xiuqin Wei
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Lang Zhou
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Lei Ma
- Guangxi
Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin541004, China
| | - Xiaomin Li
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
| | - Chuanqiang Yin
- Institute
of Photovoltaics, Nanchang University, Nanchang330031, China
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5
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Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111). Nature 2022; 606:88-93. [PMID: 35650356 DOI: 10.1038/s41586-022-04745-7] [Citation(s) in RCA: 56] [Impact Index Per Article: 28.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2021] [Accepted: 04/08/2022] [Indexed: 11/08/2022]
Abstract
Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene1-3, hexagonal boron nitride (hBN)4-6 and transition metal dichalcogenides7,8 have been grown. hBN is considered to be the 'ideal' dielectric for 2D-materials-based field-effect transistors (FETs), offering the potential for extending Moore's law9,10. Although hBN thicker than a monolayer is more desirable as substrate for 2D semiconductors11,12, highly uniform and single-crystal multilayer hBN growth has yet to be demonstrated. Here we report the epitaxial growth of wafer-scale single-crystal trilayer hBN by a chemical vapour deposition (CVD) method. Uniformly aligned hBN islands are found to grow on single-crystal Ni (111) at early stage and finally to coalesce into a single-crystal film. Cross-sectional transmission electron microscopy (TEM) results show that a Ni23B6 interlayer is formed (during cooling) between the single-crystal hBN film and Ni substrate by boron dissolution in Ni. There are epitaxial relationships between hBN and Ni23B6 and between Ni23B6 and Ni. We also find that the hBN film acts as a protective layer that remains intact during catalytic evolution of hydrogen, suggesting continuous single-crystal hBN. This hBN transferred onto the SiO2 (300 nm)/Si wafer acts as a dielectric layer to reduce electron doping from the SiO2 substrate in MoS2 FETs. Our results demonstrate high-quality single-crystal multilayered hBN over large areas, which should open up new pathways for making it a ubiquitous substrate for 2D semiconductors.
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6
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Two-dimensional materials prospects for non-volatile spintronic memories. Nature 2022; 606:663-673. [PMID: 35732761 DOI: 10.1038/s41586-022-04768-0] [Citation(s) in RCA: 63] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2020] [Accepted: 04/19/2022] [Indexed: 01/12/2023]
Abstract
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.
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Zhao R, Wei X, Zhu H. Edge stabilities, properties and growth kinetics of graphene-like two dimensional monolayers composed with Group 15 elements. Phys Chem Chem Phys 2022; 24:3348-3356. [PMID: 35060976 DOI: 10.1039/d1cp05742a] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Graphene-like two dimensional (2D) monolayers composed of β-structured Group 15 (β-G15) elements have attracted great attention due to their intrinsic bandgaps, thermodynamic stabilities and high mobilities. Quite different from graphene, a buckle with amplitude ranging from 1.24 Å to 1.65 Å exists along the z direction in β-G15 films. To learn the growth behaviours and the relevant influence of such buckles, here, we performed a systematic study on the edge stabilities of monolayer films constructed with β-phase P, As, Sb and Bi, respectively. Our theoretical results show that, for free-standing films, the zigzag edge with dangling atoms is the most stable one for bare P, As and Sb and the pristine AC edge is the most stable one for Bi, while the pristine zigzag edge becomes the most stable one for all films if the edge is terminated with hydrogen atoms, both resulting in hexagonal flakes under equilibrium growth conditions. Buckles show no apparent influence on the edge stabilities in free-standing films while play a significant role in cases considering underlying metal substrates. Such an influence can be attributed to the charge transfer difference between the lower/upper β-G15 atoms and underlying substrates, which may eventually determine the growth mechanism and morphologies of 2D β-G15 films. Detailed growth kinetics and properties were also discussed based on the first-principles results. The understanding of these fundamental principles should provide useful information for guiding the synthesis of β-G15 films and other 2D materials.
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Affiliation(s)
- Ruiqi Zhao
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
| | - Xue Wei
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
| | - Hongxia Zhu
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
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8
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Harfah H, Wicaksono Y, Sunnardianto GK, Majidi MA, Kusakabe K. High magnetoresistance of a hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission. NANOSCALE ADVANCES 2021; 4:117-124. [PMID: 36132958 PMCID: PMC9417163 DOI: 10.1039/d1na00272d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Accepted: 10/21/2021] [Indexed: 06/16/2023]
Abstract
This work presents an ab initio study of a few-layer hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to understand the electron transmission process through the interface. Spin-polarized density functional theory calculations and transmission probability calculations were conducted on Ni(111)/nhBN/Ni(111) with n = 2, 3, 4, and 5 as well as on Ni(111)/hBN-Gr-hBN/Ni(111). Slabs with magnetic alignment in an anti-parallel configuration (APC) and parallel configuration (PC) were considered. The pd-hybridizations at both the upper and lower interfaces between the Ni slabs and hBN were found to stabilize the system. The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit a high tunneling magnetoresistance (TMR) ratio at ∼0.28 eV for n = 2 and 0.34 eV for n > 2, which are slightly higher than the Fermi energy. The observed shifting of this high TMR ratio originates from the transmission of electrons through the surface states of the d z 2 -orbital of Ni atoms at interfaces which are hybridized with the p z -orbital of N atoms. In the case of n > 2, the proximity effect causes an evanescent wave, contributing to decreasing transmission probability but increasing the TMR ratio. However, the TMR ratio, as well as transmission probability, was found to be increased upon replacing the unhybridized hBN layer of the Ni/3hBN/Ni MTJ with graphene, thus yielding Ni/hBN-Gr-hBN/Ni. A TMR ratio as high as ∼1200% was observed at an energy of 0.34 eV, which is higher than the Fermi energy. Furthermore, a design is proposed for a device based on a new reading mechanism using the high TMR ratio observed just above the Fermi energy level.
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Affiliation(s)
- Halimah Harfah
- Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama-cho Toyonaka Osaka 560-8531 Japan
| | - Yusuf Wicaksono
- Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama-cho Toyonaka Osaka 560-8531 Japan
| | - Gagus Ketut Sunnardianto
- Research Center for Physics, The National Research and Innovation Agency Kawasan Puspiptek Serpong Tangerang Selatan Banten 15314 Indonesia
- School of Science, Graduate School of Science, University of Hyogo 3-2-1 Kouto, Kamigori-cho, Ako-gun Hyogo 678-1297 Japan
| | - Muhammad Aziz Majidi
- Department of Physics, Faculty of Mathematics and Natural Science, Universitas Indonesia Kampus UI Depok Depok Jawa Barat 16424 Indonesia
| | - Koichi Kusakabe
- Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama-cho Toyonaka Osaka 560-8531 Japan
- School of Science, Graduate School of Science, University of Hyogo 3-2-1 Kouto, Kamigori-cho, Ako-gun Hyogo 678-1297 Japan
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9
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Bansal A, Hilse M, Huet B, Wang K, Kozhakhmetov A, Kim JH, Bachu S, Alem N, Collazo R, Robinson JA, Engel-Herbert R, Redwing JM. Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54516-54526. [PMID: 34748305 DOI: 10.1021/acsami.1c14591] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A comparison of hexagonal boron nitride (hBN) layers grown by chemical vapor deposition on C-plane (0001) versus A-plane (112̅0) sapphire (α-Al2O3) substrate is reported. The high deposition temperature (>1200 °C) and hydrogen ambient used for hBN deposition on sapphire substantially alters the C-plane sapphire surface chemistry and leaves the top layer(s) oxygen deficient. The resulting surface morphology due to H2 etching of C-plane sapphire is inhomogeneous with increased surface roughness which causes non-uniform residual stress in the deposited hBN film. In contrast to C-plane, the A-plane of sapphire does not alter substantially under a similar high temperature H2 environment, thus providing a more stable alternative substrate for high quality hBN growth. The E2g Raman mode full width at half-maximum (FWHM) for hBN deposited on C-plane sapphire is 24.5 ± 2.1 cm-1 while for hBN on A-plane sapphire is 24.5 ± 0.7 cm-1. The lesser FWHM standard deviation on A-plane sapphire indicates uniform stress distribution across the film due to reduced undulations on the surface. The photoluminescence spectra of the hBN films at 300 and 3 K, obtained on C-plane and A-plane sapphire exhibit similar characteristics with peaks at 4.1 and 5.3 eV reported to be signature peaks associated with defects for hBN films deposited under lower V/III ratios. The dielectric breakdown field of hBN deposited on A-plane sapphire was measured to be 5 MV cm-1, agreeing well with reports on mechanically exfoliated hBN flakes. Thus, under the typical growth conditions required for high crystalline quality hBN growth, A-plane sapphire provides a more chemically stable substrate.
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Affiliation(s)
- Anushka Bansal
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Maria Hilse
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Benjamin Huet
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Azimkhan Kozhakhmetov
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ji Hyun Kim
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ramon Collazo
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Roman Engel-Herbert
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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10
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Lu H, Guo Y, Robertson J. Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47226-47235. [PMID: 34559966 DOI: 10.1021/acsami.1c13583] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) is studied as a tunnel barrier in magnetic tunnel junctions (MTJs) as a possible alternative to MgO. The tunnel magnetoresistance (TMR) of such MTJs is calculated as a function of whether the interface involves the chemi- or physisorptive site of h-BN atoms on the metal electrodes, Fe, Co, or Ni. It is found that the physisorptive site on average produces higher TMR values, whereas the chemisorptive site has the greater binding energy but lower TMR. It is found that alloying the electrodes with an inert metal-like Pt can induce the preferred absorption site on Co to become a physisorptive site, enabling a higher TMR value. It is found that the choice of physisorptive sites of each element gives more Schottky-like dependence of their Schottky barrier heights on the metal work function.
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Affiliation(s)
- Haichang Lu
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Engineering Department, Cambridge University, Cambridge CB2 1PZ, U.K
| | - Yuzheng Guo
- Engineering Department, Cambridge University, Cambridge CB2 1PZ, U.K
- School of Engineering, Swansea University, Swansea SA1 8EN, U.K
| | - John Robertson
- Engineering Department, Cambridge University, Cambridge CB2 1PZ, U.K
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11
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Liu H, You CY, Li J, Galligan PR, You J, Liu Z, Cai Y, Luo Z. Synthesis of hexagonal boron nitrides by chemical vapor deposition and their use as single photon emitters. NANO MATERIALS SCIENCE 2021. [DOI: 10.1016/j.nanoms.2021.03.002] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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12
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Zatko V, Dubois SMM, Godel F, Carrétéro C, Sander A, Collin S, Galbiati M, Peiro J, Panciera F, Patriarche G, Brus P, Servet B, Charlier JC, Martin MB, Dlubak B, Seneor P. Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures. ACS NANO 2021; 15:7279-7289. [PMID: 33755422 DOI: 10.1021/acsnano.1c00544] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution of the quantum well geometry is confirmed by Raman spectroscopy combined with transmission electron microscopy. The large-scale high homogeneity of the resulting 2D van der Waals heterostructure is also validated by macro- and microscale Raman mappings. We illustrate the benefit of this integrative in situ approach by showing the structural preservation of even the most fragile 2D layers once encapsulated in a van der Waals heterostructure. Finally, we fabricate a vertical tunneling device based on these large-scale layers and discuss the clear signature of electronic transport controlled by the quantum well configuration with ab initio calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III-V semiconductors' successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.
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Affiliation(s)
- Victor Zatko
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Simon Mutien-Marie Dubois
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cécile Carrétéro
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Anke Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Sophie Collin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Marta Galbiati
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Julian Peiro
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Federico Panciera
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Pierre Brus
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Thales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Bernard Servet
- Thales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
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13
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Tsakonas C, Dimitropoulos M, Manikas AC, Galiotis C. Growth and in situ characterization of 2D materials by chemical vapour deposition on liquid metal catalysts: a review. NANOSCALE 2021; 13:3346-3373. [PMID: 33555274 DOI: 10.1039/d0nr07330j] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
2D materials (2DMs) have now been established as unique and attractive alternatives to replace current technological materials in a number of applications. Chemical vapour deposition (CVD), is undoubtedly the most renowned technique for thin film synthesis and meets all requirements for automated large-scale production of 2DMs. Currently most CVD methods employ solid metal catalysts (SMCat) for the growth of 2DMs however their use has been found to induce structural defects such as wrinkles, fissures, and grain boundaries among others. On the other hand, liquid metal catalysts (LMCat), constitute a possible alternative for the production of defect-free 2DMs albeit with a small temperature penalty. This review is a comprehensive report of past attempts to employ LMCat for the production of 2DMs with emphasis on graphene growth. Special attention is paid to the underlying mechanisms that govern crystal growth and/or grain consolidation and film coverage. Finally, the advent of online metrology which is particularly effective for monitoring the chemical processes under LMCat conditions is also reviewed and certain directions for future development are drawn.
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Affiliation(s)
- Christos Tsakonas
- University of Patras, Chemical Engineering Department, 26504 Patras, Greece.
| | | | | | - Costas Galiotis
- University of Patras, Chemical Engineering Department, 26504 Patras, Greece. and Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH/ICE-HT), 26504 Patras, Greece
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14
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Och M, Martin MB, Dlubak B, Seneor P, Mattevi C. Synthesis of emerging 2D layered magnetic materials. NANOSCALE 2021; 13:2157-2180. [PMID: 33475647 DOI: 10.1039/d0nr07867k] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.
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Affiliation(s)
- Mauro Och
- Department of Materials, Imperial College London, SW72AZ London, UK.
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, SW72AZ London, UK.
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15
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Zhang J, Tan B, Zhang X, Gao F, Hu Y, Wang L, Duan X, Yang Z, Hu P. Atomically Thin Hexagonal Boron Nitride and Its Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000769. [PMID: 32803781 DOI: 10.1002/adma.202000769] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2020] [Revised: 05/06/2020] [Indexed: 06/11/2023]
Abstract
Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized.
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Affiliation(s)
- Jia Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Biying Tan
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Xin Zhang
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Feng Gao
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Lifeng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Xiaoming Duan
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - Zhihua Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
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16
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Rigosi AF, Levy AL, Snure MR, Glavin NR. Turn of the decade: versatility of 2D hexagonal boron nitride. JPHYS MATERIALS 2021; 4:10.1088/2515-7639/abf1ab. [PMID: 34409257 PMCID: PMC8370033 DOI: 10.1088/2515-7639/abf1ab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The era of two-dimensional (2D) materials, in its current form, truly began at the time that graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D hexagonal boron nitride (h-BN) had expanded in popularity, with use of the thin isolator permeating a significant number of fields in condensed matter and beyond. Due to the impractical nature of cataloguing every use or research pursuit, this review will cover ground in the following three subtopics relevant to this versatile material: growth, electrical measurements, and applications in optics and photonics. Through understanding how the material has been utilized, one may anticipate some of the exciting directions made possible by the research conducted up through the turn of this decade.
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Affiliation(s)
- Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Antonio L Levy
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Michael R Snure
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
| | - Nicholas R Glavin
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
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17
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Piquemal-Banci M, Galceran R, Dubois SMM, Zatko V, Galbiati M, Godel F, Martin MB, Weatherup RS, Petroff F, Fert A, Charlier JC, Robertson J, Hofmann S, Dlubak B, Seneor P. Spin filtering by proximity effects at hybridized interfaces in spin-valves with 2D graphene barriers. Nat Commun 2020; 11:5670. [PMID: 33168805 PMCID: PMC7652852 DOI: 10.1038/s41467-020-19420-6] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2019] [Accepted: 10/12/2020] [Indexed: 11/09/2022] Open
Abstract
We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal. In particular, by switching the graphene/ferromagnet interaction, spin transport reveals magneto-resistance signal MR > 80% in junctions with low resistance × area products. Descriptions based only on a simple K-point filtering picture (i.e. MR increase with the number of layers) are not sufficient to predict the behavior of our devices. We emphasize that hybridization effects need to be taken into account to fully grasp the spin properties (such as spin dependent density of states) when 2D materials are used as ultimately thin interfaces. While this is only a first demonstration, we thus introduce the fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs.
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Affiliation(s)
- Maëlis Piquemal-Banci
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Regina Galceran
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Simon M-M Dubois
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348, Louvain-la-Neuve, Belgium
| | - Victor Zatko
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Marta Galbiati
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
- Department of Engineering, University of Cambridge, Cambridge, CB21PZ, UK
| | - Robert S Weatherup
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- University of Manchester at Harwell, Diamond Light Source, Didcot, Oxfordshire, OX11 0DE, UK
| | - Frédéric Petroff
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Albert Fert
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348, Louvain-la-Neuve, Belgium
| | - John Robertson
- Department of Engineering, University of Cambridge, Cambridge, CB21PZ, UK
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, Cambridge, CB21PZ, UK
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.
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18
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Jiang R, Shi Z, Zhao W, Gao B, Wu T, Yuan Q. Vacancy-Assisted Growth Mechanism of Multilayer Hexagonal Boron Nitride on a Fe 2B Substrate. J Phys Chem Lett 2020; 11:8511-8517. [PMID: 32914631 DOI: 10.1021/acs.jpclett.0c02289] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The controllable synthesis of large-area and uniform hexagonal boron nitride (h-BN) films has been recently achieved on metal-boron alloy catalysts with the use of N2 feedstock, representing important progress in an economic and environmentally friendly process. However, the systematic investigation of the growth mechanism is still lacking, which impedes the further development of this method. In this work, on the basis of density functional theory (DFT) calculations and experiments, we reveal the vacancy-assisted growth mechanism of h-BN on Fe2B substrate. It is found that B vacancies created by the formation of BN dimers play important roles in the migration of B and N atoms near the catalyst surface. The diffusions of B and N atoms in the Fe2B substrate need to overcome energy barriers of only less than 1.5 eV, which enables abundant dissolution of N atoms near the catalytic surface. Moreover, we found the critical barrier for h-BN growth is in the nucleation stage, which is ∼2 eV. These advantages enable the synthesis of h-BN at a low temperature of 700 K in our experiments. This vacancy-assisted growth of h-BN films on Fe2B substrates is beneficial to the wafer-scale fabrication of multilayer materials, paving the way to potential applications in two-dimensional electronic and optoelectronic devices.
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Affiliation(s)
- Ren Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhiyuan Shi
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Zhao
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Boxiang Gao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Qinghong Yuan
- Centre for Theoretical and Computational Molecular Science, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD 4072, Australia
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
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19
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He Y, Tian H, Das P, Cui Z, Pena P, Chiang I, Shi W, Xu L, Li Y, Yang T, Isarraraz M, Ozkan CS, Ozkan M, Lake RK, Liu J. Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal-Insulator-Metal Tunneling Devices. ACS APPLIED MATERIALS & INTERFACES 2020; 12:35318-35327. [PMID: 32635717 DOI: 10.1021/acsami.0c07201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN) plays a significant role in nanoscale electrical and optical devices because of its superior properties. However, the difficulties in the controllable growth of high-quality films hinder its applications. One of the crucial factors that influence the quality of the films obtained via epitaxy is the substrate property. Here, we report a study of 2D h-BN growth on carburized Ni substrates using molecular beam epitaxy. It was found that the carburization of Ni substrates with different surface orientations leads to different kinetics of h-BN growth. While the carburization of Ni(100) enhances the h-BN growth, the speed of the h-BN growth on carburized Ni(111) reduces. As-grown continuous single-layer h-BN films are used to fabricate Ni/h-BN/Ni metal-insulator-metal (MIM) devices, which demonstrate a high breakdown electric field of 12.9 MV/cm.
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Affiliation(s)
- Yanwei He
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Hao Tian
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Protik Das
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Zhenjun Cui
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Pedro Pena
- Department of Chemistry, University of California, Riverside, California 92521, United States
| | - Ivan Chiang
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Wenhao Shi
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Long Xu
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Yuan Li
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Tianchen Yang
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Miguel Isarraraz
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Cengiz S Ozkan
- Materials Science and Engineering Program, University of California, Riverside, California 92521, United States
- Department of Mechanical Engineering, University of California, Riverside, California 92521, United States
| | - Mihrimah Ozkan
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Roger K Lake
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
| | - Jianlin Liu
- Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
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20
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Caglar M, Silkina I, Brown BT, Thorneywork AL, Burton OJ, Babenko V, Gilbert SM, Zettl A, Hofmann S, Keyser UF. Tunable Anion-Selective Transport through Monolayer Graphene and Hexagonal Boron Nitride. ACS NANO 2020; 14:2729-2738. [PMID: 31891480 PMCID: PMC7098055 DOI: 10.1021/acsnano.9b08168] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Accepted: 12/31/2019] [Indexed: 05/23/2023]
Abstract
Membranes that selectively filter for both anions and cations are central to technological applications from clean energy generation to desalination devices. 2D materials have immense potential as these ion-selective membranes due to their thinness, mechanical strength, and tunable surface chemistry; however, currently, only cation-selective membranes have been reported. Here we demonstrate the controllable cation and anion selectivity of both monolayer graphene and hexagonal boron nitride. In particular, we measure the ionic current through membranes grown by chemical vapor deposition containing well-known defects inherent to scalably produced and wet-transferred 2D materials. We observe a striking change from cation selectivity with monovalent ions to anion selectivity by controlling the concentration of multivalent ions and inducing charge inversion on the 2D membrane. Furthermore, we find good agreement between our experimental data and theoretical predictions from the Goldman-Hodgkin-Katz equation and use this model to extract selectivity ratios. These tunable selective membranes conduct up to 500 anions for each cation and thus show potential for osmotic power generation.
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Affiliation(s)
- Mustafa Caglar
- Cavendish
Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Inese Silkina
- Department
of Materials Science and Metallurgy, University
of Cambridge, Cambridge CB3 0FS, United Kingdom
| | - Bertram T. Brown
- Cavendish
Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Alice L. Thorneywork
- Cavendish
Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Oliver J. Burton
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Vitaliy Babenko
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Stephen Matthew Gilbert
- Department
of Physics, University of California, Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Kavli Energy
NanoScience Institute at the University of California, Berkeley and
the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alex Zettl
- Department
of Physics, University of California, Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Kavli Energy
NanoScience Institute at the University of California, Berkeley and
the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Ulrich F. Keyser
- Cavendish
Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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21
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Gao L, Ta N, Dong J, Song T, Chen S, Fu Q. Facile Transformation of Ni‐based Colloids into Highly Stable Nanocatalysts Embedded within h‐BN for the Water‐Gas Shift Reaction. ChemCatChem 2020. [DOI: 10.1002/cctc.201902263] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Lijun Gao
- State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsThe Chinese Academy of Sciences Dalian 116023 P.R. China
| | - Na Ta
- State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsThe Chinese Academy of Sciences Dalian 116023 P.R. China
| | - Jinhu Dong
- State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsThe Chinese Academy of Sciences Dalian 116023 P.R. China
| | - Tongyuan Song
- State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsThe Chinese Academy of Sciences Dalian 116023 P.R. China
| | - Siru Chen
- State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsThe Chinese Academy of Sciences Dalian 116023 P.R. China
| | - Qiang Fu
- State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsThe Chinese Academy of Sciences Dalian 116023 P.R. China
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22
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Shi Z, Wang X, Li Q, Yang P, Lu G, Jiang R, Wang H, Zhang C, Cong C, Liu Z, Wu T, Wang H, Yu Q, Xie X. Vapor-liquid-solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates. Nat Commun 2020; 11:849. [PMID: 32051410 PMCID: PMC7015929 DOI: 10.1038/s41467-020-14596-3] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2019] [Accepted: 01/22/2020] [Indexed: 12/20/2022] Open
Abstract
Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe82B18 alloy and N2 as reactants. Liquid Fe82B18 not only supplies boron but also continuously dissociates nitrogen atoms from the N2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures. Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe82B18 alloy and N2 as reactants.
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Affiliation(s)
- Zhiyuan Shi
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Xiujun Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Qingtian Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Peng Yang
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Guangyuan Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Ren Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,State Key Laboratory of Precision Spectroscopy, School of Physics and Material Science, East China Normal University, 3663N. Zhongshan Road, Shanghai, 200062, China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Chao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Chunxiao Cong
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Zhi Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.,School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai, 200031, China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China. .,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China. .,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.
| | - Qingkai Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.,School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai, 200031, China
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23
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Comtet J, Glushkov E, Navikas V, Feng J, Babenko V, Hofmann S, Watanabe K, Taniguchi T, Radenovic A. Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride. NANO LETTERS 2019; 19:2516-2523. [PMID: 30865468 DOI: 10.1021/acs.nanolett.9b00178] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Point defects can have significant impact on the mechanical, electronic, and optical properties of materials. The development of robust, multidimensional, high-throughput, and large-scale characterization techniques of defects is thus crucial for the establishment of integrated nanophotonic technologies and material growth optimization. Here, we demonstrate the potential of wide-field spectral single-molecule localization microscopy (SMLM) for the determination of ensemble spectral properties as well as the characterization of spatial, spectral, and temporal dynamics of single defects in chemical vapor deposition (CVD)-grown and irradiated exfoliated hexagonal boron-nitride materials. We characterize the heterogeneous spectral response of our samples and identify at least two types of defects in CVD-grown materials, while irradiated exfoliated flakes show predominantly only one type of defects. We analyze the blinking kinetics and spectral emission for each type of defects and discuss their implications with respect to the observed spectral heterogeneity of our samples. Our study shows the potential of wide-field spectral SMLM techniques in material science and paves the way toward the quantitative multidimensional mapping of defect properties.
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Affiliation(s)
- Jean Comtet
- Laboratory of Nanoscale Biology, Institute of Bioengineering, School of Engineering , École Polytechnique Fédérale de Lausanne (EPFL) , 1015 Lausanne , Switzerland
| | - Evgenii Glushkov
- Laboratory of Nanoscale Biology, Institute of Bioengineering, School of Engineering , École Polytechnique Fédérale de Lausanne (EPFL) , 1015 Lausanne , Switzerland
| | - Vytautas Navikas
- Laboratory of Nanoscale Biology, Institute of Bioengineering, School of Engineering , École Polytechnique Fédérale de Lausanne (EPFL) , 1015 Lausanne , Switzerland
| | - Jiandong Feng
- Laboratory of Experimental Physical Biology, Department of Chemistry , Zhejiang University , Hangzhou , 310027 , China
| | - Vitaliy Babenko
- Department of Engineering , University of Cambridge , JJ Thomson Avenue , CB3 0FA Cambridge , United Kingdom
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , JJ Thomson Avenue , CB3 0FA Cambridge , United Kingdom
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 306-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 306-0044 , Japan
| | - Aleksandra Radenovic
- Laboratory of Nanoscale Biology, Institute of Bioengineering, School of Engineering , École Polytechnique Fédérale de Lausanne (EPFL) , 1015 Lausanne , Switzerland
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24
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Wang R, Purdie DG, Fan Y, Massabuau FCP, Braeuninger-Weimer P, Burton OJ, Blume R, Schloegl R, Lombardo A, Weatherup RS, Hofmann S. A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals. ACS NANO 2019; 13:2114-2126. [PMID: 30642169 DOI: 10.1021/acsnano.8b08712] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.
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Affiliation(s)
- Ruizhi Wang
- Department of Engineering , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
| | - David G Purdie
- Department of Engineering , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
- Cambridge Graphene Centre , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
| | - Ye Fan
- Department of Engineering , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
| | - Fabien C-P Massabuau
- Department of Materials Science and Metallurgy , University of Cambridge , 27 Charles Babbage Road , Cambridge CB3 0FA , United Kingdom
| | - Philipp Braeuninger-Weimer
- Department of Engineering , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
| | - Oliver J Burton
- Department of Engineering , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
| | - Raoul Blume
- Helmholtz-Zentrum Berlin für Materialen und Energie , D-12489 Berlin , Germany
| | | | - Antonio Lombardo
- Department of Engineering , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
- Cambridge Graphene Centre , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
| | - Robert S Weatherup
- School of Chemistry , University of Manchester , Oxford Road , Manchester M13 9PL , U.K
- University of Manchester at Harwell, Diamond Light Source , Didcot , Oxfordshire OX11 0DE , U.K
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , 9 JJ Thomson Avenue , Cambridge CB3 0FA , United Kingdom
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25
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Susi T, Madsen J, Ludacka U, Mortensen JJ, Pennycook TJ, Lee Z, Kotakoski J, Kaiser U, Meyer JC. Efficient first principles simulation of electron scattering factors for transmission electron microscopy. Ultramicroscopy 2019; 197:16-22. [DOI: 10.1016/j.ultramic.2018.11.002] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2018] [Revised: 10/29/2018] [Accepted: 11/06/2018] [Indexed: 11/25/2022]
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26
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Wang X, Hossain M, Wei Z, Xie L. Growth of two-dimensional materials on hexagonal boron nitride (h-BN). NANOTECHNOLOGY 2019; 30:034003. [PMID: 30444726 DOI: 10.1088/1361-6528/aaeb70] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
With its atomically smooth surface yet no dangling bond, chemical inertness and high temperature sustainability, the insulating hexagonal boron nitride (h-BN) can be an ideal substrate for two-dimensional (2D) material growth and device measurement. In this review, research progress on the chemical growth of 2D materials on h-BN has been summarized, such as chemical vapor deposition and molecular beam epitaxy of graphene and various transition metal dichalcogenides. Further, stacking of the as-grown 2D materials relative to h-BN, thermal expansion matching between the deposited materials and h-BN, electrical property of 2D materials on h-BN have been discussed in detail.
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Affiliation(s)
- Xinsheng Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
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27
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Li Y, Garnier V, Journet C, Barjon J, Loiseau A, Stenger I, Plaud A, Toury B, Steyer P. Advanced synthesis of highly crystallized hexagonal boron nitride by coupling polymer-derived ceramics and spark plasma sintering processes-influence of the crystallization promoter and sintering temperature. NANOTECHNOLOGY 2019; 30:035604. [PMID: 30452387 DOI: 10.1088/1361-6528/aaebb4] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Hexagonal boron nitride nanosheets (BNNSs) are promising 2D materials due to their exceptional chemical and thermal stabilities together with their electrical insulation properties. A combined synthesis method involving the polymer-derived ceramics (PDCs) route and the spark plasma sintering (SPS) process is proposed, leading to well-crystallized and pure layered h-BN crystals, prone to be exfoliated into large BNNSs. Here we focus more specifically on the influence of two key parameters of the process to be optimized: the Li3N concentration (0-10 wt%) and the SPS temperature (1200 °C-1950 °C). The presence of Li3N, added as crystal promoter in the pre-ceramic powder, significantly improves the crystallinity level of the product, as evidenced by XRD, SEM and Raman spectrometry. SPS temperature strongly modifies the size of the resulting h-BN flakes. The influence of SPS temperature on both purity and crystallinity is studied using cathodoluminescence. h-BN flakes larger than 200 μm2 (average flake area) are obtained. Few-layered BNNSs are successfully isolated, through exfoliation process.
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Affiliation(s)
- Yangdi Li
- Univ. Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 7 Avenue Jean Capelle, F-69621, Villeurbanne, France. Univ. Lyon, Université Lyon 1, LMI, UMR CNRS 5615, 6 rue Victor Grignard, F-69622, Villeurbanne, France
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28
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Zurob E, Dennett G, Gentil D, Montero-Silva F, Gerber U, Naulín P, Gómez A, Fuentes R, Lascano S, Rodrigues da Cunha TH, Ramírez C, Henríquez R, Del Campo V, Barrera N, Wilkens M, Parra C. Inhibition of Wild Enterobacter cloacae Biofilm Formation by Nanostructured Graphene- and Hexagonal Boron Nitride-Coated Surfaces. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E49. [PMID: 30609710 PMCID: PMC6358881 DOI: 10.3390/nano9010049] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2018] [Revised: 12/25/2018] [Accepted: 12/25/2018] [Indexed: 11/17/2022]
Abstract
Although biofilm formation is a very effective mechanism to sustain bacterial life, it is detrimental in medical and industrial sectors. Current strategies to control biofilm proliferation are typically based on biocides, which exhibit a negative environmental impact. In the search for environmentally friendly solutions, nanotechnology opens the possibility to control the interaction between biological systems and colonized surfaces by introducing nanostructured coatings that have the potential to affect bacterial adhesion by modifying surface properties at the same scale. In this work, we present a study on the performance of graphene and hexagonal boron nitride coatings (h-BN) to reduce biofilm formation. In contraposition to planktonic state, we focused on evaluating the efficiency of graphene and h-BN at the irreversible stage of biofilm formation, where most of the biocide solutions have a poor performance. A wild Enterobacter cloacae strain was isolated, from fouling found in a natural environment, and used in these experiments. According to our results, graphene and h-BN coatings modify surface energy and electrostatic interactions with biological systems. This nanoscale modification determines a significant reduction in biofilm formation at its irreversible stage. No bactericidal effects were found, suggesting both coatings offer a biocompatible solution for biofilm and fouling control in a wide range of applications.
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Affiliation(s)
- Elsie Zurob
- Laboratorio Nanobiomateriales, Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
- Laboratorio de Microbiología Básica y Aplicada, Universidad de Santiago de Chile, Avenida Libertador Bernardo O'Higgins 3363, Santiago, Chile.
| | - Geraldine Dennett
- Laboratorio Nanobiomateriales, Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
| | - Dana Gentil
- Laboratorio Nanobiomateriales, Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
| | - Francisco Montero-Silva
- Laboratorio Nanobiomateriales, Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
| | - Ulrike Gerber
- Faculty Environment and Natural Science, Institute of Biotechnology, Brandenburg University of Technology, Universitätsplatz 1, 01968 Senftenberg, Germany.
| | - Pamela Naulín
- Facultad de Ciencias Biológicas, Pontificia Universidad Católica de Chile, Alameda 340, Santiago, Chile.
| | - Andrea Gómez
- Facultad de Ciencias Biológicas, Pontificia Universidad Católica de Chile, Alameda 340, Santiago, Chile.
| | - Raúl Fuentes
- Departamento de Industrias, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
| | - Sheila Lascano
- Departamento de Mecánica, Universidad Técnica Federico Santa María, Avda. Vicuña Mackenna 3939, Santiago, Chile.
| | | | - Cristian Ramírez
- Departamento de Ingeniería Química y Ambiental, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
| | - Ricardo Henríquez
- Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
| | - Valeria Del Campo
- Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
| | - Nelson Barrera
- Facultad de Ciencias Biológicas, Pontificia Universidad Católica de Chile, Alameda 340, Santiago, Chile.
| | - Marcela Wilkens
- Laboratorio de Microbiología Básica y Aplicada, Universidad de Santiago de Chile, Avenida Libertador Bernardo O'Higgins 3363, Santiago, Chile.
| | - Carolina Parra
- Laboratorio Nanobiomateriales, Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso, Chile.
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29
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Rao R, Pint CL, Islam AE, Weatherup RS, Hofmann S, Meshot ER, Wu F, Zhou C, Dee N, Amama PB, Carpena-Nuñez J, Shi W, Plata DL, Penev ES, Yakobson BI, Balbuena PB, Bichara C, Futaba DN, Noda S, Shin H, Kim KS, Simard B, Mirri F, Pasquali M, Fornasiero F, Kauppinen EI, Arnold M, Cola BA, Nikolaev P, Arepalli S, Cheng HM, Zakharov DN, Stach EA, Zhang J, Wei F, Terrones M, Geohegan DB, Maruyama B, Maruyama S, Li Y, Adams WW, Hart AJ. Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications. ACS NANO 2018; 12:11756-11784. [PMID: 30516055 DOI: 10.1021/acsnano.8b06511] [Citation(s) in RCA: 174] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes (SWCNTs) remain critical to realizing many important commercial applications. Here we review recent breakthroughs in the synthesis of SWCNTs and highlight key ongoing research areas and challenges. A few key applications that capitalize on the properties of SWCNTs are also reviewed with respect to the recent synthesis breakthroughs and ways in which synthesis science can enable advances in these applications. While the primary focus of this review is on the science framework of SWCNT growth, we draw connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene.
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Affiliation(s)
- Rahul Rao
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Cary L Pint
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 United States
| | - Ahmad E Islam
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Robert S Weatherup
- School of Chemistry , University of Manchester , Oxford Road , Manchester M13 9PL , U.K
- University of Manchester at Harwell, Diamond Light Source, Didcot , Oxfordshire OX11 0DE , U.K
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , Cambridge CB3 0FA , U.K
| | - Eric R Meshot
- Physical and Life Sciences Directorate , Lawrence Livermore National Laboratory , Livermore , California 94550 United States
| | - Fanqi Wu
- Ming-Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Chongwu Zhou
- Ming-Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Nicholas Dee
- Department of Mechanical Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Placidus B Amama
- Tim Taylor Department of Chemical Engineering , Kansas State University , Manhattan , Kansas 66506 , United States
| | - Jennifer Carpena-Nuñez
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Wenbo Shi
- Department of Chemical and Environmental Engineering , Yale University , New Haven , Connecticut 06520 , United States
| | - Desiree L Plata
- Department of Civil and Environmental Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Evgeni S Penev
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Perla B Balbuena
- Department of Chemical Engineering, Department of Materials Science and Engineering, Department of Chemistry , Texas A&M University , College Station , Texas 77843 , United States
| | - Christophe Bichara
- Aix-Marseille University and CNRS , CINaM UMR 7325 , 13288 Marseille , France
| | - Don N Futaba
- Nanotube Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Suguru Noda
- Department of Applied Chemistry and Waseda Research Institute for Science and Engineering , Waseda University , 3-4-1 Okubo , Shinjuku-ku, Tokyo 169-8555 , Japan
| | - Homin Shin
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Keun Su Kim
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Benoit Simard
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Francesca Mirri
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Matteo Pasquali
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Francesco Fornasiero
- Physical and Life Sciences Directorate , Lawrence Livermore National Laboratory , Livermore , California 94550 United States
| | - Esko I Kauppinen
- Department of Applied Physics , Aalto University School of Science , P.O. Box 15100 , FI-00076 Espoo , Finland
| | - Michael Arnold
- Department of Materials Science and Engineering University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Baratunde A Cola
- George W. Woodruff School of Mechanical Engineering and School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Pavel Nikolaev
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Hui-Ming Cheng
- Tsinghua-Berkeley Shenzhen Institute , Tsinghua University , Shenzhen 518055 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Dmitri N Zakharov
- Center for Functional Nanomaterials , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Eric A Stach
- Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Jin Zhang
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Fei Wei
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering , Tsinghua University , Beijing 100084 , China
| | - Mauricio Terrones
- Department of Physics and Center for Two-Dimensional and Layered Materials , The Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Benji Maruyama
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
| | - Shigeo Maruyama
- Department of Mechanical Engineering , The University of Tokyo , 7-3-1 Hongo , Bunkyo-ku , Tokyo 113-8656 , Japan
| | - Yan Li
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - W Wade Adams
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - A John Hart
- Department of Mechanical Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
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30
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Chen MW, Kim H, Bernard C, Pizzochero M, Zaldı Var J, Pascual JI, Ugeda MM, Yazyev OV, Greber T, Osterwalder J, Renault O, Kis A. Electronic Properties of Transferable Atomically Thin MoSe 2/h-BN Heterostructures Grown on Rh(111). ACS NANO 2018; 12:11161-11168. [PMID: 30371049 DOI: 10.1021/acsnano.8b05628] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy ( kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level ( EF), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe2, are well preserved in MoSe2/h-BN heterostructures.
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Affiliation(s)
| | | | - Carlo Bernard
- Physik-Institut , University of Zurich , 8057 Zurich , Switzerland
| | | | | | - Jose Ignacio Pascual
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Spain
- Ikerbasque, Basque Foundation for Science , 48013 Bilbao , Spain
| | - Miguel M Ugeda
- Ikerbasque, Basque Foundation for Science , 48013 Bilbao , Spain
- Donostia International Physics Center (DIPC) , Manuel Lardizábal 4 , 20018 San Sebastián , Spain
- Centro de Fı́sica de Materiales (CSIC-UPV/EHU) , Manuel Lardizábal 5 , 20018 San Sebastián , Spain
| | | | - Thomas Greber
- Physik-Institut , University of Zurich , 8057 Zurich , Switzerland
| | - Jürg Osterwalder
- Physik-Institut , University of Zurich , 8057 Zurich , Switzerland
| | - Olivier Renault
- Université Grenoble Alpes , F-38000 Grenoble , France
- CEA, LETI , MINATEC Campus, F-38054 Grenoble , France
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31
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Aslanzadeh SA. Adsorption of mercaptopurine drug on the BN nanotube, nanosheet and nanocluster: a density functional theory study. Mol Phys 2018. [DOI: 10.1080/00268976.2018.1525504] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
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32
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Braeuninger-Weimer P, Funke S, Wang R, Thiesen P, Tasche D, Viöl W, Hofmann S. Fast, Noncontact, Wafer-Scale, Atomic Layer Resolved Imaging of Two-Dimensional Materials by Ellipsometric Contrast Micrography. ACS NANO 2018; 12:8555-8563. [PMID: 30080966 DOI: 10.1021/acsnano.8b04167] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Adequate characterization and quality control of atomically thin layered materials (2DM) has become a serious challenge particularly given the rapid advancements in their large area manufacturing and numerous emerging industrial applications with different substrate requirements. Here, we focus on ellipsometric contrast micrography (ECM), a fast intensity mode within spectroscopic imaging ellipsometry, and show that it can be effectively used for noncontact, large area characterization of 2DM to map coverage, layer number, defects and contamination. We demonstrate atomic layer resolved, quantitative mapping of chemical vapor deposited graphene layers on Si/SiO2-wafers, but also on rough Cu catalyst foils, highlighting that ECM is applicable to all application relevant substrates. We discuss the optimization of ECM parameters for high throughput characterization. While the lateral resolution can be less than 1 μm, we particularly explore fast scanning and demonstrate imaging of a 4″ graphene wafer in 47 min at 10 μm lateral resolution, i.e., an imaging speed of 1.7 cm2/min. Furthermore, we show ECM of monolayer hexagonal BN (h-BN) and of h-BN/graphene bilayers, highlighting that ECM is applicable to a wide range of 2D layered structures that have previously been very challenging to characterize and thereby fills an important gap in 2DM metrology.
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Affiliation(s)
| | - Sebastian Funke
- Accurion GmbH , Stresemannstraße 30 , Göttingen 37079 , Germany
| | - Ruizhi Wang
- Department of Engineering , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Peter Thiesen
- Accurion GmbH , Stresemannstraße 30 , Göttingen 37079 , Germany
| | - Daniel Tasche
- Faculty of Natural Sciences and Technology , University of Applied Sciences and Arts , Von-Ossietzky-Straße 99 , Göttingen 37085 , Germany
| | - Wolfgang Viöl
- Faculty of Natural Sciences and Technology , University of Applied Sciences and Arts , Von-Ossietzky-Straße 99 , Göttingen 37085 , Germany
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , Cambridge CB3 0FA , United Kingdom
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33
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Mishra NS, Saravanan P. A Review on the Synergistic Features of Hexagonal Boron Nitride (White Graphene) as Adsorbent-Photo Active Nanomaterial. ChemistrySelect 2018. [DOI: 10.1002/slct.201801524] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Nirmalendu S. Mishra
- Environmental Nanotechnology Laboratory; Department of Environmental Science and Engineering; Indian Institute of Technology [ISM], Dhanbad; Dhanbad-826004 Jharkhand India
| | - Pichiah Saravanan
- Environmental Nanotechnology Laboratory; Department of Environmental Science and Engineering; Indian Institute of Technology [ISM], Dhanbad; Dhanbad-826004 Jharkhand India
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34
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Uchida Y, Nakandakari S, Kawahara K, Yamasaki S, Mitsuhara M, Ago H. Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate. ACS NANO 2018; 12:6236-6244. [PMID: 29863847 DOI: 10.1021/acsnano.8b03055] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (B3H6N3) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS2 grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO2 substrate. The PL line width of WS2/h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS2/SiO2 (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.
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35
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Sun J, Lu C, Song Y, Ji Q, Song X, Li Q, Zhang Y, Zhang L, Kong J, Liu Z. Recent progress in the tailored growth of two-dimensional hexagonal boron nitride via chemical vapour deposition. Chem Soc Rev 2018; 47:4242-4257. [PMID: 29717732 DOI: 10.1039/c8cs00167g] [Citation(s) in RCA: 82] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Recent years have witnessed many advances in two-dimensional (2D) hexagonal boron nitride (h-BN) materials in both fundamental research and practical applications. This has ultimately been inspired by the unique electrical and optical properties, as well as the excellent thermal and chemical stability of h-BN. However, controllable and scalable preparation of 2D h-BN materials has been challenging. Very recently, the chemical vapour deposition (CVD) technique has shown great promise for achieving high-quality h-BN samples with excellent layer-number selectivity and large-area uniformity, considerably contributing to the latest advancements of 2D material research. In this tutorial review, we provide a systematic summary of the state-of-the-art in the tailored production of 2D h-BN on various substrates by virtue of CVD routes.
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Affiliation(s)
- Jingyu Sun
- Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, Jiangsu 215006, P. R. China.
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36
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Tian H, Khanaki A, Das P, Zheng R, Cui Z, He Y, Shi W, Xu Z, Lake R, Liu J. Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers. NANO LETTERS 2018; 18:3352-3361. [PMID: 29727192 DOI: 10.1021/acs.nanolett.7b05179] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Reliable and controllable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) layers is highly desirable for their applications as 2D dielectric and wide bandgap semiconductors. In this work, we demonstrate that the dissolution of carbon into cobalt (Co) and nickel (Ni) substrates can facilitate the growth of h-BN and attain large-area 2D homogeneity. The morphology of the h-BN film can be controlled from 2D layer-plus-3D islands to homogeneous 2D few-layers by tuning the carbon interstitial concentration in the Co substrate through a carburization process prior to the h-BN growth step. Comprehensive characterizations were performed to evaluate structural, electrical, optical, and dielectric properties of these samples. Single-crystal h-BN flakes with an edge length of ∼600 μm were demonstrated on carburized Ni. An average breakdown electric field of 9 MV/cm was achieved for an as-grown continuous 3-layer h-BN on carburized Co. Density functional theory calculations reveal that the interstitial carbon atoms can increase the adsorption energy of B and N atoms on the Co(111) surface and decrease the diffusion activation energy and, in turn, promote the nucleation and growth of 2D h-BN.
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Affiliation(s)
- Hao Tian
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Alireza Khanaki
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Protik Das
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Renjing Zheng
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Zhenjun Cui
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Yanwei He
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Wenhao Shi
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Zhongguang Xu
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Roger Lake
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Jianlin Liu
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
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37
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Piquemal-Banci M, Galceran R, Godel F, Caneva S, Martin MB, Weatherup RS, Kidambi PR, Bouzehouane K, Xavier S, Anane A, Petroff F, Fert A, Dubois SMM, Charlier JC, Robertson J, Hofmann S, Dlubak B, Seneor P. Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride. ACS NANO 2018; 12:4712-4718. [PMID: 29697954 DOI: 10.1021/acsnano.8b01354] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.
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Affiliation(s)
- Maëlis Piquemal-Banci
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Regina Galceran
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Sabina Caneva
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Marie-Blandine Martin
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Robert S Weatherup
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Piran R Kidambi
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Karim Bouzehouane
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Stephane Xavier
- Thales Research and Technology , 1 avenue Augustin Fresnel , 91767 Palaiseau , France
| | - Abdelmadjid Anane
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Frédéric Petroff
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Albert Fert
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Simon Mutien-Marie Dubois
- Institute of Condensed Matter and Nanosciences (IMCN) , Université Catholique de Louvain , B-1348 Louvain-la-Neuve , Belgium
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences (IMCN) , Université Catholique de Louvain , B-1348 Louvain-la-Neuve , Belgium
| | - John Robertson
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
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38
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McLean B, Eveleens CA, Mitchell I, Webber GB, Page AJ. Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory. Phys Chem Chem Phys 2018; 19:26466-26494. [PMID: 28849841 DOI: 10.1039/c7cp03835f] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Low-dimensional carbon and boron nitride nanomaterials - hexagonal boron nitride, graphene, boron nitride nanotubes and carbon nanotubes - remain at the forefront of advanced materials research. Catalytic chemical vapour deposition has become an invaluable technique for reliably and cost-effectively synthesising these materials. In this review, we will emphasise how a synergy between experimental and theoretical methods has enhanced the understanding and optimisation of this synthetic technique. This review examines recent advances in the application of CVD to synthesising boron nitride and carbon nanomaterials and highlights where, in many cases, molecular simulations and quantum chemistry have provided key insights complementary to experimental investigation. This synergy is particularly prominent in the field of carbon nanotube and graphene CVD synthesis, and we propose here it will be the key to future advances in optimisation of CVD synthesis of boron nitride nanomaterials, boron nitride - carbon composite materials, and other nanomaterials generally.
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Affiliation(s)
- Ben McLean
- School of Environmental & Life Sciences, The University of Newcastle, Callaghan NSW 2308, Australia.
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39
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Sharma KP, Sharma S, Khaniya Sharma A, Paudel Jaisi B, Kalita G, Tanemura M. Edge controlled growth of hexagonal boron nitride crystals on copper foil by atmospheric pressure chemical vapor deposition. CrystEngComm 2018. [DOI: 10.1039/c7ce01846k] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
We report on a precursor supply technique controlled h-BN crystal growth over the catalytic activity of Cu by APCVD.
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Affiliation(s)
- Kamal Prasad Sharma
- Department of Frontier Materials
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Subash Sharma
- Department of Physical Science and Engineering
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Aliza Khaniya Sharma
- Department of Physical Science and Engineering
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Balaram Paudel Jaisi
- Department of Physical Science and Engineering
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Golap Kalita
- Department of Frontier Materials
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
- Department of Physical Science and Engineering
| | - Masaki Tanemura
- Department of Frontier Materials
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
- Department of Physical Science and Engineering
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40
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Xie J, Liao L, Gong Y, Li Y, Shi F, Pei A, Sun J, Zhang R, Kong B, Subbaraman R, Christensen J, Cui Y. Stitching h-BN by atomic layer deposition of LiF as a stable interface for lithium metal anode. SCIENCE ADVANCES 2017; 3:eaao3170. [PMID: 29202031 PMCID: PMC5707176 DOI: 10.1126/sciadv.aao3170] [Citation(s) in RCA: 97] [Impact Index Per Article: 13.9] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2017] [Accepted: 10/27/2017] [Indexed: 05/20/2023]
Abstract
Defects are important features in two-dimensional (2D) materials that have a strong influence on their chemical and physical properties. Through the enhanced chemical reactivity at defect sites (point defects, line defects, etc.), one can selectively functionalize 2D materials via chemical reactions and thereby tune their physical properties. We demonstrate the selective atomic layer deposition of LiF on defect sites of h-BN prepared by chemical vapor deposition. The LiF deposits primarily on the line and point defects of h-BN, thereby creating seams that hold the h-BN crystallites together. The chemically and mechanically stable hybrid LiF/h-BN film successfully suppresses lithium dendrite formation during both the initial electrochemical deposition onto a copper foil and the subsequent cycling. The protected lithium electrodes exhibit good cycling behavior with more than 300 cycles at relatively high coulombic efficiency (>95%) in an additive-free carbonate electrolyte.
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Affiliation(s)
- Jin Xie
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Lei Liao
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Yongji Gong
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Yanbin Li
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Feifei Shi
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Allen Pei
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Jie Sun
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Rufan Zhang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Biao Kong
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Ram Subbaraman
- Bosch Research and Technology Center North America, 4005 Miranda Avenue #200, Palo Alto, CA 94304, USA
| | - Jake Christensen
- Bosch Research and Technology Center North America, 4005 Miranda Avenue #200, Palo Alto, CA 94304, USA
| | - Yi Cui
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
- Corresponding author.
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41
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Babenko V, Lane G, Koos AA, Murdock AT, So K, Britton J, Meysami SS, Moffat J, Grobert N. Time dependent decomposition of ammonia borane for the controlled production of 2D hexagonal boron nitride. Sci Rep 2017; 7:14297. [PMID: 29085080 PMCID: PMC5662770 DOI: 10.1038/s41598-017-14663-8] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2017] [Accepted: 10/13/2017] [Indexed: 11/09/2022] Open
Abstract
Ammonia borane (AB) is among the most promising precursors for the large-scale synthesis of hexagonal boron nitride (h-BN) by chemical vapour deposition (CVD). Its non-toxic and non-flammable properties make AB particularly attractive for industry. AB decomposition under CVD conditions, however, is complex and hence has hindered tailored h-BN production and its exploitation. To overcome this challenge, we report in-depth decomposition studies of AB under industrially safe growth conditions. In situ mass spectrometry revealed a time and temperature-dependent release of a plethora of NxBy-containing species and, as a result, significant changes of the N:B ratio during h-BN synthesis. Such fluctuations strongly influence the formation and morphology of 2D h-BN. By means of in situ gas monitoring and regulating the precursor temperature over time we achieve uniform release of volatile chemical species over many hours for the first time, paving the way towards the controlled, industrially viable production of h-BN.
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Affiliation(s)
- Vitaliy Babenko
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Centre for Advanced Photonics and Electronics, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
| | - George Lane
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Department of Chemistry, University of Cambridge, Lensfield Rd, Cambridge, CB2 1EW, UK
| | - Antal A Koos
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Nanostructures Department, Institute of Technical Physics and Materials Science, Centre for Energy Research, PO Box 49, H-1525, Budapest, Hungary
| | - Adrian T Murdock
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- CSIRO Manufacturing, P.O. Box 218, Bradfield Road, Lindfield, New South Wales, 2070, Australia
| | - Karwei So
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | - Jude Britton
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Renishaw New Mills, Wotton-under-Edge, Gloucestershire, GL12 8JR, UK
| | | | - Jonathan Moffat
- Oxford Instruments Asylum Research, High Wycombe, HP12 3SE, UK
| | - Nicole Grobert
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK.
- Williams Advanced Engineering, Grove, Oxfordshire, OX12 0DQ, UK.
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42
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Caneva S, Martin MB, D'Arsié L, Aria AI, Sezen H, Amati M, Gregoratti L, Sugime H, Esconjauregui S, Robertson J, Hofmann S, Weatherup RS. From Growth Surface to Device Interface: Preserving Metallic Fe under Monolayer Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2017; 9:29973-29981. [PMID: 28782356 DOI: 10.1021/acsami.7b08717] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We investigate the interfacial chemistry between Fe catalyst foils and monolayer hexagonal boron nitride (h-BN) following chemical vapor deposition and during subsequent atmospheric exposure, using scanning electron microscopy, X-ray photoemission spectroscopy, and scanning photoelectron microscopy. We show that regions of the Fe surface covered by h-BN remain in a metallic state during exposure to moist air for ∼40 h at room temperature. This protection is attributed to the strong interfacial interaction between h-BN and Fe, which prevents the rapid intercalation of oxidizing species. Local Fe oxidation is observed on bare Fe regions and close to defects in the h-BN film (e.g., domain boundaries, wrinkles, and edges), which over the longer-term provide pathways for slow bulk oxidation of Fe. We further confirm that the interface between h-BN and metallic Fe can be recovered by vacuum annealing at ∼600 °C, although this is accompanied by the creation of defects within the h-BN film. We discuss the importance of these findings in the context of integrated manufacturing and transfer-free device integration of h-BN, particularly for technologically important applications where h-BN has potential as a tunnel barrier such as magnetic tunnel junctions.
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Affiliation(s)
- Sabina Caneva
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
| | - Marie-Blandine Martin
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
| | - Lorenzo D'Arsié
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
| | - Adrianus I Aria
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
- Surface Engineering and Nanotechnology Institute, Cranfield University , College Road, MK43 0AL Cranfield, U.K
| | - Hikmet Sezen
- Elettra-Sincrotrone Trieste S.C.p.A., AREA Science Park , S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Matteo Amati
- Elettra-Sincrotrone Trieste S.C.p.A., AREA Science Park , S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Luca Gregoratti
- Elettra-Sincrotrone Trieste S.C.p.A., AREA Science Park , S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Hisashi Sugime
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
| | - Santiago Esconjauregui
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
| | - John Robertson
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
| | - Robert S Weatherup
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K
- Materials Sciences Division, Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley, California 94720, United States
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43
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Liu K, Lihter M, Sarathy A, Caneva S, Qiu H, Deiana D, Tileli V, Alexander DTL, Hofmann S, Dumcenco D, Kis A, Leburton JP, Radenovic A. Geometrical Effect in 2D Nanopores. NANO LETTERS 2017; 17:4223-4230. [PMID: 28592108 DOI: 10.1021/acs.nanolett.7b01091] [Citation(s) in RCA: 56] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
A long-standing problem in the application of solid-state nanopores is the lack of the precise control over the geometry of artificially formed pores compared to the well-defined geometry in their biological counterpart, that is, protein nanopores. To date, experimentally investigated solid-state nanopores have been shown to adopt an approximately circular shape. In this Letter, we investigate the geometrical effect of the nanopore shape on ionic blockage induced by DNA translocation using triangular h-BN nanopores and approximately circular molybdenum disulfide (MoS2) nanopores. We observe a striking geometry-dependent ion scattering effect, which is further corroborated by a modified ionic blockage model. The well-acknowledged ionic blockage model is derived from uniform ion permeability through the 2D nanopore plane and hemisphere like access region in the nanopore vicinity. On the basis of our experimental results, we propose a modified ionic blockage model, which is highly related to the ionic profile caused by geometrical variations. Our findings shed light on the rational design of 2D nanopores and should be applicable to arbitrary nanopore shapes.
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Affiliation(s)
| | | | | | - Sabina Caneva
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, United Kingdom
| | | | | | | | | | - Stephan Hofmann
- Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, United Kingdom
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44
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Bayer BC, Caneva S, Pennycook TJ, Kotakoski J, Mangler C, Hofmann S, Meyer JC. Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films. ACS NANO 2017; 11:4521-4527. [PMID: 28410557 PMCID: PMC5444048 DOI: 10.1021/acsnano.6b08315] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2016] [Accepted: 04/14/2017] [Indexed: 05/30/2023]
Abstract
We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping h-BN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes.
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Affiliation(s)
- Bernhard C. Bayer
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Sabina Caneva
- Department
of Engineering, University of Cambridge, 9 J.J. Thomson Avenue, CB3 0FA, Cambridge, U.K.
| | - Timothy J. Pennycook
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Jani Kotakoski
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Clemens Mangler
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, 9 J.J. Thomson Avenue, CB3 0FA, Cambridge, U.K.
| | - Jannik C. Meyer
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
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45
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Ma L, Zeng XC. Catalytic Directional Cutting of Hexagonal Boron Nitride: The Roles of Interface and Etching Agents. NANO LETTERS 2017; 17:3208-3214. [PMID: 28441495 DOI: 10.1021/acs.nanolett.7b00771] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Transition-metal (TM) nanoparticle catalyzed cutting has been proven to be an efficient approach to carve out straight channels in graphene to produce high-quality nanoribbons. However, the applicability of such a catalytic approach to hexagonal boron nitride (h-BN) is still an open question due to binary element compositions. Here, our ab initio study indicates that long and straight channels along either the zigzag or the armchair direction of the BN sheet can be carved out, driven by the energetically favored TM-zigzag or TM-armchair BN interface, regardless of roughness of the TM particle surface. Optimal experimental conditions for the catalytic cutting of either BN or BN/graphene hybrid sheet across the domain boundary are proposed via the analysis of the competition between TM-BN (or TM-graphene) interface and H-terminated BN (or graphene) edge. The computation results can serve to guide the experimental design for the production of highly uniform BN (or hybrid BN/graphene) nanoribbons with atomically smooth edges.
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Affiliation(s)
- Liang Ma
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 68588, United States
| | - Xiao Cheng Zeng
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 68588, United States
- Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China , Hefei, Anhui 230026, China
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46
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Walker M, Ubych K, Saraswat V, Chalklen EA, Braeuninger-Weimer P, Caneva S, Weatherup RS, Hofmann S, Keyser UF. Extrinsic Cation Selectivity of 2D Membranes. ACS NANO 2017; 11:1340-1346. [PMID: 28157333 PMCID: PMC5333182 DOI: 10.1021/acsnano.6b06034] [Citation(s) in RCA: 58] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2016] [Accepted: 02/03/2017] [Indexed: 05/22/2023]
Abstract
From a systematic study of the concentration driven diffusion of positive and negative ions across porous 2D membranes of graphene and hexagonal boron nitride (h-BN), we prove their cation selectivity. Using the current-voltage characteristics of graphene and h-BN monolayers separating reservoirs of different salt concentrations, we calculate the reversal potential as a measure of selectivity. We tune the Debye screening length by exchanging the salt concentrations and demonstrate that negative surface charge gives rise to cation selectivity. Surprisingly, h-BN and graphene membranes show similar characteristics, strongly suggesting a common origin of selectivity in aqueous solvents. For the first time, we demonstrate that the cation flux can be increased by using ozone to create additional pores in graphene while maintaining excellent selectivity. We discuss opportunities to exploit our scalable method to use 2D membranes for applications including osmotic power conversion.
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Affiliation(s)
- Michael
I. Walker
- Cavendish
Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Krystian Ubych
- Cavendish
Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Vivek Saraswat
- Department
of Materials Science and Metallurgy, University
of Cambridge, Cambridge CB3 0FS, United Kingdom
| | - Edward A. Chalklen
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | | | - Sabina Caneva
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Robert S. Weatherup
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Ulrich F. Keyser
- Cavendish
Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
- E-mail:
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47
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Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy. Sci Rep 2017; 7:43100. [PMID: 28230178 PMCID: PMC5322373 DOI: 10.1038/srep43100] [Citation(s) in RCA: 39] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2016] [Accepted: 01/18/2017] [Indexed: 01/12/2023] Open
Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, large-size and single-crystalline h-BN domains is of vital importance for fundamental research as well as practical applications. In this work, we report the growth of h-BN films on mechanically polished cobalt (Co) foils using plasma-assisted molecular beam epitaxy. Under appropriate growth conditions, the coverage of h-BN layers can be readily controlled by growth time. A large-area, multi-layer h-BN film with a thickness of 5~6 nm is confirmed by Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy. In addition, the size of h-BN single domains is 20~100 μm. Dielectric property of as-grown h-BN film is evaluated by characterization of Co(foil)/h-BN/Co(contact) capacitor devices. Breakdown electric field is in the range of 3.0~3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics. In addition, the effect of substrate morphology on h-BN growth is discussed regarding different domain density, lateral size, and thickness of the h-BN films grown on unpolished and polished Co foils.
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48
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Weatherup RS, Shahani AJ, Wang ZJ, Mingard K, Pollard AJ, Willinger MG, Schloegl R, Voorhees PW, Hofmann S. In Situ Graphene Growth Dynamics on Polycrystalline Catalyst Foils. NANO LETTERS 2016; 16:6196-6206. [PMID: 27576749 PMCID: PMC5064306 DOI: 10.1021/acs.nanolett.6b02459] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropy depending on the presence of step edges and grain boundaries. The growth model developed serves as a general framework for understanding and optimizing the growth of 2D materials on polycrystalline catalysts.
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Affiliation(s)
- Robert S. Weatherup
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
- Materials Sciences Division, Lawrence Berkeley
National Laboratory, 1 Cyclotron Road, Berkeley California 94720, United States
- E-mail:
| | - Ashwin J. Shahani
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Zhu-Jun Wang
- Fritz Haber Institute, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Ken Mingard
- National Physical
Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW, United Kingdom
| | - Andrew J. Pollard
- National Physical
Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW, United Kingdom
| | | | - Robert Schloegl
- Fritz Haber Institute, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Peter W. Voorhees
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
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49
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Hao S, Yang B, Gao Y. Unravelling merging behaviors and electrostatic properties of CVD-grown monolayer MoS2 domains. J Chem Phys 2016; 145:084704. [DOI: 10.1063/1.4961509] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Song Hao
- College of Physics and Electronics, Institute of Super Microstructure and Ultrafast Process in Advanced Materials, Central South University, 605 South Lushan Road, Changsha 410012, People’s Republic of China
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410012, People’s Republic of China
| | - Bingchu Yang
- College of Physics and Electronics, Institute of Super Microstructure and Ultrafast Process in Advanced Materials, Central South University, 605 South Lushan Road, Changsha 410012, People’s Republic of China
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410012, People’s Republic of China
| | - Yongli Gao
- College of Physics and Electronics, Institute of Super Microstructure and Ultrafast Process in Advanced Materials, Central South University, 605 South Lushan Road, Changsha 410012, People’s Republic of China
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410012, People’s Republic of China
- Department of Physics and Astronomy, University of Rochester, Rochester, New York 14534, USA
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50
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Williams JOD, Alexander-Webber JA, Lapington JS, Roy M, Hutchinson IB, Sagade AA, Martin MB, Braeuninger-Weimer P, Cabrero-Vilatela A, Wang R, De Luca A, Udrea F, Hofmann S. Towards a Graphene-Based Low Intensity Photon Counting Photodetector. SENSORS (BASEL, SWITZERLAND) 2016; 16:E1351. [PMID: 27563903 PMCID: PMC5038629 DOI: 10.3390/s16091351] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/19/2016] [Revised: 07/15/2016] [Accepted: 08/15/2016] [Indexed: 06/06/2023]
Abstract
Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies.
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Affiliation(s)
- Jamie O D Williams
- Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH, UK.
| | - Jack A Alexander-Webber
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
| | - Jon S Lapington
- Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH, UK.
| | - Mervyn Roy
- Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH, UK.
| | - Ian B Hutchinson
- Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH, UK.
| | - Abhay A Sagade
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
| | - Marie-Blandine Martin
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
| | | | - Andrea Cabrero-Vilatela
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
| | - Ruizhi Wang
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
| | - Andrea De Luca
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
| | - Florin Udrea
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
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