1
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Šoškić BN, Bekaert J, Sevik C, Milošević MV. Enhanced Superconductivity of Hydrogenated β 12 Borophene. NANO LETTERS 2024; 24:12650-12657. [PMID: 39316522 DOI: 10.1021/acs.nanolett.4c03845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
Borophene stands out among elemental two-dimensional materials due to its extraordinary physical properties, including structural polymorphism, strong anisotropy, metallicity, and the potential for phonon-mediated superconductivity. However, confirming superconductivity in borophene experimentally has been evasive to date, mainly due to the detrimental effects of metallic substrates and its susceptibility to oxidation. In this study, we present an ab initio analysis of superconductivity in the experimentally synthesized hydrogenated β12 borophene, which has been proven to be less prone to oxidation. Our findings demonstrate that hydrogenation significantly enhances both the stability and superconducting properties of β12 borophene. Furthermore, we reveal that tensile strain and hole doping, achievable through various experimental methods, significantly enhance the critical temperature, reaching up to 29 K. These findings not only promote further fundamental research on superconducting borophene and its heterostructures, but also position hydrogenated borophene as a versatile platform for low-dimensional superconducting electronics.
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Affiliation(s)
- Božidar N Šoškić
- Faculty of Natural Sciences and Mathematics, University of Montenegro, Džordža Vašingtona bb, 81000 Podgorica, Montenegro
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Jonas Bekaert
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Cem Sevik
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Milorad V Milošević
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
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2
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Wang K, Choyal S, Schultz JF, McKenzie J, Li L, Liu X, Jiang N. Borophene: Synthesis, Chemistry, and Electronic Properties. Chempluschem 2024; 89:e202400333. [PMID: 39031807 DOI: 10.1002/cplu.202400333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2024] [Revised: 06/18/2024] [Accepted: 06/19/2024] [Indexed: 07/22/2024]
Abstract
As a neighbor of carbon in the periodic table, boron exhibits versatile structural and electronic configurations, with its allotropes predicted to possess intriguing structures and properties. Since the experimental realization of two-dimensional (2D) boron sheets (borophene) on Ag(111) substrates in 2015, the experimental study of the realization and characteristics of borophene has drawn increasing interest. In this review, we summarize the synthesis and properties of borophene, which are mainly based on experimental results. First, the synthesis of borophene on different substrates, as well as borophane and bilayer borophene, featuring unique phases and properties, are discussed. Next, the chemistry of borophene, such as oxidation, hydrogenation, and its integration into heterostructures with other materials, is summarized. We also mention a few works focused on the physical properties of borophene, specifically its electronic properties. Lastly, the brief outlook addresses challenges toward practical applications of borophene and possible solutions.
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Affiliation(s)
- Kai Wang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Shilpa Choyal
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Jeremy F Schultz
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - James McKenzie
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Linfei Li
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Xiaolong Liu
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Nan Jiang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
- Department of Physics, University of Illinois Chicago, Chicago, IL 60607, USA
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3
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Gao Q, Yan Q, Hu Z, Chen L. Bilayer Kagome Borophene with Multiple van Hove Singularities. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305059. [PMID: 37840410 PMCID: PMC11462296 DOI: 10.1002/advs.202305059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 09/12/2023] [Indexed: 10/17/2023]
Abstract
The appearance of van Hove singularities near the Fermi level leads to prominent phenomena, including superconductivity, charge density wave, and ferromagnetism. Here a bilayer Kagome lattice with multiple van Hove singularities is designed and a novel borophene with such lattice (BK-borophene) is proposed by the first-principles calculations. BK-borophene, which is formed via three-center two-electron (3c-2e) σ-type bonds, is predicted to be energetically, dynamically, thermodynamically, and mechanically stable. The electronic structure hosts both conventional and high-order van Hove singularities in one band. The conventional van Hove singularity resulting from the horse saddle is 0.065 eV lower than the Fermi level, while the high-order one resulting from the monkey saddle is 0.385 eV below the Fermi level. Both the singularities lead to the divergence of electronic density of states. Besides, the high-order singularity is just intersected to a Dirac-like cone, where the Fermi velocity can reach 1.34 × 106 m s-1. The interaction between the two Kagome lattices is critical for the appearance of high-order van Hove singularities. The novel bilayer Kagome borophene with rich and intriguing electronic structure offers an unprecedented platform for studying correlation phenomena in quantum material systems and beyond.
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Affiliation(s)
- Qian Gao
- School of PhysicsNankai UniversityTianjin300071China
| | - Qimin Yan
- Department of PhysicsNortheastern UniversityBostonMA02115USA
| | - Zhenpeng Hu
- School of PhysicsNankai UniversityTianjin300071China
| | - Lan Chen
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
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4
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Wang MH, Wang Z, Wang G, Song H, Fu Y, Li L, Cui ZH. High Transition Temperature Driven by Type-II Dirac Fermions in Topological Superconductor B 7Be 2B 7 Nanosheet. NANO LETTERS 2024; 24:11831-11838. [PMID: 39283029 DOI: 10.1021/acs.nanolett.4c02497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
Topological superconductors (TSCs) offer a promising avenue for delving into exotic states of matter and fundamental physics. We propose a strategy for realizing high transition temperatures (high-Tc) in TSCs by leveraging nontrivial topology alongside a high carrier density near the Fermi level in metal-doped borophenes. We identified 39 candidates with exceptional thermodynamic stability from thousands of Be-intercalated borophenes (Be1-xBx) via extensive structural searches. Seven candidates exhibit high carrier densities, with B7Be2B7 emerging as a particularly promising candidate. This nanosheet displays both type-I and type-II Dirac fermions, indicative of Z 2 topological metals, thereby positioning it as an ideal platform for high-Tc TSCs. The high-density π electrons of B7Be2B7 originating from type-II Dirac fermions, coupled with the out-of-plane vibrations of B and Be atoms, significantly enhance the electron-phonon coupling (λ = 1.42), resulting in a substantially high-Tc of 31.5 K. These findings underscore the potential of metal-doped borophenes as a cutting-edge material platform for achieving high-Tc TSCs.
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Affiliation(s)
- Meng-Hui Wang
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China
| | - Zhengxuan Wang
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Guangtao Wang
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Haolin Song
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, International Center of Computational Method and Software, College of Physics, Jilin University, Changchun 130023, China
| | - Lu Li
- College of Chemistry, Jilin University, Changchun 130023, China
| | - Zhong-Hua Cui
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Jilin University, Changchun 130023, China
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5
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Zhang X, Miyamoto M, Yuan M, Tsujikawa Y, Yamaguchi K, Horio M, Ozawa K, Yubuta K, Kondo T, Matsuda I. Fermi Edge of Semimetallic Borophane Sheets and its Reduction by a Porous Structure. J Phys Chem Lett 2024; 15:9349-9355. [PMID: 39239889 PMCID: PMC11418824 DOI: 10.1021/acs.jpclett.4c01869] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2024] [Revised: 08/28/2024] [Accepted: 08/28/2024] [Indexed: 09/07/2024]
Abstract
Theoretically predicted materials are often synthesized in low yields, and unexpected relationships are often encountered between the target materials and byproducts. Recently, two-dimensional boron materials proposed on the basis of model simulations and first principles calculations and possessing abundant atomic structures have attracted considerable interest. Borophane or the hydrogen boride (HB) sheet has been predicted to be the Dirac nodal semimetal when it has a boron network of nonsymmorphic symmetry. Upgrading the standard method, we fabricated freestanding HB sheets possessing either an apparent Fermi edge, reduced spectral weight, or a Fermi-level energy gap, as confirmed by using microbeam photoemission spectroscopy. The gapless electronic structures were correlated with terminal B-H bonds at the sheet edges, indicating the electronic modification of the porous structure as directly microscopically observed. The gapped or insulating sheet was fabricated via oxidation. This research provides methods for regulating the structural morphology and electronic states of HB sheets during synthesis.
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Affiliation(s)
- Xiaoni Zhang
- Institute
for Solid State Physics (ISSP), The University
of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Masashige Miyamoto
- Institute
for Solid State Physics (ISSP), The University
of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Mei Yuan
- Institute
of Pure and Applied Sciences, University
of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
| | - Yuki Tsujikawa
- Institute
for Solid State Physics (ISSP), The University
of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Kazuki Yamaguchi
- Institute
for Solid State Physics (ISSP), The University
of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Masafumi Horio
- Institute
for Solid State Physics (ISSP), The University
of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Kenichi Ozawa
- Institute
of Materials Structure Science, KEK, Ibaraki 305-0801, Japan
| | - Kunio Yubuta
- Faculty
of Engineering, Kyushu University, Fukuoka, Fukuoka 819-0395, Japan
| | - Takahiro Kondo
- Institute
of Pure and Applied Sciences, University
of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
| | - Iwao Matsuda
- Institute
for Solid State Physics (ISSP), The University
of Tokyo, Kashiwa, Chiba 277-8581, Japan
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6
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Lingas R, Charistos ND, Muñoz-Castro A. Borospherene in the Nanohoop: Complexation and Aromaticity of Neutral and Dioxidized Cycloparaphenylene Supramolecules with B40 and C60 Fullerenes. Chemistry 2024; 30:e202402027. [PMID: 38923129 DOI: 10.1002/chem.202402027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2024] [Revised: 06/24/2024] [Accepted: 06/24/2024] [Indexed: 06/28/2024]
Abstract
Supramolecular complexes of carbon nanohoops with fullerenes play a key role for the design of novel nanomaterials with technological applications. Herein we investigate with density functional theory (DFT) methods the capability of neutral and dioxidized cycloparaphenylenes (CPPs) to encapsulate all-boron fullerene B40. Our results show that [9]CPP and [10]CPP are feasible host candidates to encapsulate B40 displaying comparable complexation energies with the all-carbon analog [10]CPP⊃C60. Upon dioxidation the host-guest interactions are not affected, whereas the positive charge is delocalized on the CPPs leading to global aromatic character of the hosts. Consequently, the dicationic complexes [n]CPP2+⊃B40 and [10]CPP2+⊃C60 display augmented global shielding cones that strongly shield the guests, as manifested by large upfield shifts in 11B-NMR and 13C-NMR signals. Hence, CPP complexes with carbon fullerenes can be extended borospherene B40 host-guest complexes, as well as to doubly oxidized species stabilized by global host aromaticity, expanding our understanding of carbon nanohoop complexes to boron-based fullerenes.
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Affiliation(s)
- Rafael Lingas
- Department of Chemistry, Aristotle University of Thessaloniki, Thessaloniki, 54124, Greece
| | - Nickolas D Charistos
- Department of Chemistry, Aristotle University of Thessaloniki, Thessaloniki, 54124, Greece
| | - Alvaro Muñoz-Castro
- Facultad de Ingeniería, Arquitectura y Diseño, Universidad San Sebastián, Bellavista 7, Santiago, 8420524, Chile
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7
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Li H, Felix LC, Li Q, Ruan Q, Yakobson BI, Hersam MC. Atomic-Resolution Vibrational Mapping of Bilayer Borophene. NANO LETTERS 2024; 24:10674-10680. [PMID: 39141815 DOI: 10.1021/acs.nanolett.4c03224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
The successful synthesis of borophene beyond the monolayer limit has expanded the family of two-dimensional boron nanomaterials. While atomic-resolution topographic imaging has been previously reported, vibrational mapping has the potential to reveal deeper insight into the chemical bonding and electronic properties of bilayer borophene. Herein, inelastic electron tunneling spectroscopy (IETS) is used to resolve the low-energy vibrational and electronic properties of bilayer-α (BL-α) borophene on Ag(111) at the atomic scale. Using a carbon monoxide (CO)-functionalized scanning tunneling microscopy tip, the BL-α borophene IETS spectra reveal unique features compared to single-layer borophene and typical CO vibrations on metal surfaces. Distinct vibrational spectra are further observed for hollow and filled boron hexagons within the BL-α borophene unit cell, providing evidence for interlayer bonding between the constituent borophene layers. These experimental results are compared with density functional theory calculations to elucidate the interplay between the vibrational modes and electronic states in bilayer borophene.
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Affiliation(s)
- Hui Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Levi C Felix
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Qiucheng Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Qiyuan Ruan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 75005, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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8
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Poswal P, Shukla N. Unveiling the electronic and magnetic landscape of 3d transition metal doped hydrogenated borophenes: a first-principles study. Phys Chem Chem Phys 2024; 26:20864-20874. [PMID: 39044560 DOI: 10.1039/d4cp02644f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/25/2024]
Abstract
In this study, density functional theory (DFT) simulations have been utilized to probe the intricate electronic and magnetic properties of pristine and 3d transition metal doped hydrogenated borophenes. It has been investigated through electronic structure calculations that the hydrogenation of 2-Pmmn borophene leads to the emergence of an in-plane Dirac cone, elucidating its transformation into a potential Dirac material with fortified stability. By employing spin-polarized DFT calculations with the Hubbard U correction, we have estimated the electronic and magnetic states of transition metal doped hydrogenated borophenes. Our analysis reveals that the Cr doped hydrogenated borophene manifests the highest magnetic moment of 4.76μB, making it a promising magnetic 2D material. Furthermore, the exchange energy has been calculated by considering the interaction between two transition metal atoms, to assess its magnetic state (ferromagnetic/antiferromagnetic/non-magnetic). The mean field theory and Heisenberg model have been utilized for Néel and Curie temperature estimation, corresponding to anti-ferromagnetic and ferromagnetic states respectively. The present study contributes to the design and understanding of Dirac materials with tailored electronic and magnetic characteristics, highlighting the potential for novel applications in electronics and spintronics. The insights gained from this work may pave the way for future experimental investigations and the realization of functionalized 2D materials with tunable properties.
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Affiliation(s)
- Paras Poswal
- Department of Physics, National Institute of Technology Patna, Bihar 800005, India.
| | - Neeraj Shukla
- Department of Physics, National Institute of Technology Patna, Bihar 800005, India.
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9
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Wang H, Ding P, Xia GJ, Zhao X, E W, Yu M, Ma Z, Wang YG, Wang LS, Li J, Yang X. Formation of Supernarrow Borophene Nanoribbons. Angew Chem Int Ed Engl 2024; 63:e202406535. [PMID: 38652809 DOI: 10.1002/anie.202406535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2024] [Revised: 04/19/2024] [Accepted: 04/22/2024] [Indexed: 04/25/2024]
Abstract
Borophenes have sparked considerable interest owing to their fascinating physical characteristics and diverse polymorphism. However, borophene nanoribbons (BNRs) with widths less than 2 nm have not been achieved. Herein, we report the experimental realization of supernarrow BNRs. Combining scanning tunneling microscopy imaging with density functional theory modeling and ab initio molecular dynamics simulations, we demonstrate that, under the applied growth conditions, boron atoms can penetrate the outermost layer of Au(111) and form BNRs composed of a pair of zigzag (2,2) boron rows. The BNRs have a width self-contained to ∼1 nm and dipoles at the edges to keep them separated. They are embedded in the outermost Au layer and shielded on top by the evacuated Au atoms, free of the need for post-passivation. Scanning tunneling spectroscopy reveals distinct edge states, primarily attributed to the localized spin at the BNRs' zigzag edges. This work adds a new member to the boron material family and introduces a new physical feature to borophenes.
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Affiliation(s)
- Haochen Wang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, China
| | - Pengcheng Ding
- State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, 150001, Harbin, China
| | - Guang-Jie Xia
- Department of Chemistry and Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Xiangyun Zhao
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, China
| | - Wenlong E
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, China
| | - Miao Yu
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, China
- State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, 150001, Harbin, China
- School of Materials and Energy, University of Electronic Science and Technology, 610000, Chengdu, China
| | - Zhibo Ma
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, China
| | - Yang-Gang Wang
- Department of Chemistry and Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Lai-Sheng Wang
- Department of Chemistry, Brown University, 02912, Providence, Rhode Island, USA
| | - Jun Li
- Department of Chemistry and Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, 518055, Shenzhen, China
- Theoretical Chemistry Center, Department of Chemistry, Tsinghua University, 100084, Beijing, China
| | - Xueming Yang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, China
- Department of Chemistry and Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, 518055, Shenzhen, China
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10
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Pan Y, Li Y, Chen F, Yang W, Yi Z. Dynamically tunable multi-band plasmon-induced absorption based on multi-layer borophene ribbon gratings. Phys Chem Chem Phys 2024; 26:13209-13218. [PMID: 38630493 DOI: 10.1039/d4cp01062k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
In this paper, we propose a borophene-based grating structure (BBGS) to realize multi-band plasmon-induced absorption. The coupling of two resonance modes excited by upper borophene grating (UBG) and lower borophene grating (LBG) leads to plasmon-induced absorption. The coupled-mode theory (CMT) is utilized to fit the absorption spectrum. The simulated spectrum fits well with the calculated result. We found the absorption peaks exhibit a blue shift with an increase in the carrier density of borophene grating. Further, as the coupling distance D increases, the first absorption peak shows a blue shift, while the second absorption peak exhibits a red shift, leading to a smaller reflection window. Moreover, the enhancement absorption effect caused by the bottom PEC layer is also analyzed. On this basis, using a three-layer borophene grating structure, we designed a three-band perfect absorber with intensities of 99.83%, 99.45%, and 99.96% in the near-infrared region. The effect of polarization angle and relaxation time on the absorption spectra is studied in detail. Although several plasmon-induced absorption based on two-dimensional (2D) materials, such as graphene, black phosphorus, and transition metal dichalcogenides (TMDs), have been previously reported, this paper proposes a borophene-based metamaterial to achieve plasmon-induced perfect absorption since borophene has some advantages such as high surface-to-volume ratios, mechanical compliance, high carrier mobility, excellent flexibility, and long-term stability. Therefore, the proposed borophene-based metamaterial will be beneficial in the fields of multi-band perfect absorber in the near future.
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Affiliation(s)
- Yizhao Pan
- Institute of Quantum Optics and Information Photonics, School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, P. R. China.
| | - Yuchang Li
- Institute of Quantum Optics and Information Photonics, School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, P. R. China.
| | - Fang Chen
- Institute of Quantum Optics and Information Photonics, School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, P. R. China.
| | - Wenxing Yang
- Institute of Quantum Optics and Information Photonics, School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, P. R. China.
| | - Zao Yi
- Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China
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11
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Zhong C, Sun M, Altalhi T, Yakobson BI. Superhard and Superconducting Bilayer Borophene. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1967. [PMID: 38730773 PMCID: PMC11084974 DOI: 10.3390/ma17091967] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Revised: 04/14/2024] [Accepted: 04/19/2024] [Indexed: 05/13/2024]
Abstract
Two-dimensional superconductors, especially the covalent metals such as borophene, have received significant attention due to their new fundamental physics, as well as potential applications. Furthermore, the bilayer borophene has recently ignited interest due to its high stability and versatile properties. Here, the mechanical and superconducting properties of bilayer-δ6 borophene are explored by means of first-principles computations and anisotropic Migdal-Eliashberg analytics. We find that the coexistence of strong covalent bonds and delocalized metallic bonds endows this structure with remarkable mechanical properties (maximum 2D-Young's modulus of ~570 N/m) and superconductivity with a critical temperature of ~20 K. Moreover, the superconducting critical temperature of this structure can be further boosted to ~46 K by applied strain, which is the highest value known among all borophenes or two-dimensional elemental materials.
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Affiliation(s)
- Chengyong Zhong
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China;
| | - Minglei Sun
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX 77005, USA
| | - Tariq Altalhi
- Chemistry Department, Taif University, Taif 21974, Saudi Arabia;
| | - Boris I. Yakobson
- Chemistry Department, Taif University, Taif 21974, Saudi Arabia;
- Department of Chemistry, Rice University, Houston, TX 77005, USA
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12
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Wang MH, Yi WC, Song HL, Wu FZ, Fu YH, Liu XB, Cui ZH. Build Borophite from Borophenes: A Boron Analogue Graphite. NANO LETTERS 2024; 24:3448-3455. [PMID: 38452056 DOI: 10.1021/acs.nanolett.4c00078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Unlike graphene derived from graphite, borophenes represent a distinct class of synthetic two-dimensional materials devoid of analogous bulk-layered allotropes, leading to covalent bonding within borophenes instead of van der Waals (vdW) stacking. Our investigation focuses on 665 vdW-stacking boron bilayers to uncover potential bulk-layered boron allotropes through vdW stacking. Systematic high-throughput screening and stability analysis reveal a prevailing inclination toward covalently bonded layers in the majority of boron bilayers. However, an intriguing outlier emerges in δ5 borophene, demonstrating potential as a vdW-stacking candidate. We delve into electronic and topological structural similarities between δ5 borophene and graphene, shedding light on the structural integrity and stability of vdW-stacked boron structures across bilayers, multilayers, and bulk-layered allotropes. The δ5 borophene analogues exhibit metallic properties and characteristics of phonon-mediated superconductors, boasting a critical temperature near 22 K. This study paves the way for the concept of "borophite", a long-awaited boron analogue of graphite.
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Affiliation(s)
- Meng-Hui Wang
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China
| | - Wen-Cai Yi
- Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
| | - Hao-Lin Song
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China
| | - Fa-Zhi Wu
- School of Materials Science and Engineering, Jilin University, Changchun 130023, China
| | - Yu-Hao Fu
- State Key Laboratory of Superhard Materials, International Center of Computational Method and Software, College of Physics, Jilin University, Changchun 130023, China
| | - Xiao-Bing Liu
- Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
| | - Zhong-Hua Cui
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Jilin University, Changchun 130023, China
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13
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Nikan E, Kordbacheh AA. Spin-dependent transport and spin transfer torque in a borophene-based spin valve. Phys Chem Chem Phys 2024; 26:6782-6793. [PMID: 38323581 DOI: 10.1039/d3cp04742c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
This article presents a theoretical analysis of spin-dependent transport and spin-transfer torque in a borophene-based ferromagnetic/normal/ferromagnetic junction. This study focuses on borophene nanoribbons (BNRs) as a basis for spin valve numerical calculations for the investigation of conduction in both configurations where the magnetization vectors of the leads are parallel or antiparallel to each other (P and AP configurations, respectively), magnetoresistance (MR), and spin transfer torque (STT). The Landauer formalism and non-equilibrium Green's function (NEGF) approaches are used to derive the spin-dependent tunneling currents in the Magnetic Tunnel Junction (MTJ). The results of the calculations for a zigzag BNR show that the conductance is always larger than e2/h for the P configuration of lead magnetizations. For the AP configuration, the conductance becomes zero in specific energy ranges. A perfect MR plateau is found for the junction in the absence of disorder, which proves to be an excellent spin valve candidate. The variations of STT with Fermi energy and the relative angle between the magnetizations of two electrodes are studied for different strengths of ferromagnetic magnetization. The STT per unit bias voltage, as a function of Fermi energy, decreases significantly near the Dirac point energy. A sinusoidal oscillatory pattern can be evidently observed in the STT at unit bias voltage V versus the angle between the magnetizations of two electrodes, which amplifies as M increases. Borophene has unique properties, including low density and high hardness, heat resistance, and electrical conductance, which make it a promising candidate for spintronics. This article provides a comprehensive analysis of the spin-dependent properties of borophene and its potential applications in spintronics.
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Affiliation(s)
- Erfan Nikan
- Materials Simulation Laboratory, Department of Physics, Iran University of Science and Technology, Tehran 1684613114, Iran.
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14
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Li H, Yang J, Ma Y, Liu G, Xu X, Huo Z, Chen J, Li J, Zhang W, Wang K, Chen L, Xiao X. Monolayer Borophene Formation on Cu(111) Surface Triggered by ⟨ 1 1 ¯ 0 ⟩ $\langle {1\bar{1}0} \rangle $ Step Edge. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303502. [PMID: 37840447 DOI: 10.1002/smll.202303502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Revised: 09/30/2023] [Indexed: 10/17/2023]
Abstract
Borophene, a promising material with potential applications in electronics, energy storage, and sensors, is successfully grown as a monolayer on Ag(111), Cu(111), and Au(111) surfaces using molecular beam epitaxy. The growth of two-dimensional borophene on Ag(111) and Au(111) is proposed to occur via surface adsorption and boron segregation, respectively. However, the growth mode of borophene on Cu(111) remains unclear. To elucidate this, scanning tunneling microscopy in conjunction with theoretical calculations is used to study the phase transformation of boron nanostructures under post-annealing treatments. Results show that by elevating the substrate temperature, boron nanostructures undergo an evolution from amorphous boron to striped-phase borophene (η = 1/6) adhering to the Cu⟨ 1 1 ¯ 0 ⟩ $\langle {1\bar{1}0} \rangle $ step edge, and finally to irregularly shaped β-type borophene (η = 5/36) either on the substrate surface or embedded in the topmost Cu layer. dI/dV spectra recorded near the borophene/Cu lateral interfaces indicate that the striped-phase borophene is a metastable phase, requiring more buckling and electron transfer to stabilize the crystal structure. These findings offer not only an in-depth comprehension of the β-type borophene formation on Cu(111), but also hold potential for enabling borophene synthesis on weakly-binding semiconducting or insulating substrates with 1D active defects.
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Affiliation(s)
- Hao Li
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Jiangang Yang
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Yaping Ma
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
- School of Future Technology, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou, 450046, P. R. China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou, 450046, P. R. China
| | - Guowei Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xin Xu
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Zhe Huo
- School of Future Technology, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou, 450046, P. R. China
| | - Junbo Chen
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
- School of Future Technology, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou, 450046, P. R. China
| | - Jing Li
- Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing, 100191, P. R. China
| | - Weifeng Zhang
- School of Future Technology, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou, 450046, P. R. China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou, 450046, P. R. China
| | - Kedong Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xudong Xiao
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
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15
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Kang Y, Yang K, Fu J, Wang Z, Li X, Lu Z, Zhang J, Li H, Zhang J, Ma W. Selective Interfacial Excited-State Carrier Dynamics and Efficient Charge Separation in Borophene-Based Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307591. [PMID: 37757801 DOI: 10.1002/adma.202307591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 09/12/2023] [Indexed: 09/29/2023]
Abstract
Borophene-based van der Waals heterostructures have demonstrated enormous potential in the realm of optoelectronic and photovoltaic devices, which has sparked a wide range of interest. However, a thorough understanding of the microscopic excited-state electronic dynamics at interfaces is lacking, which is essential for determining the macroscopic optoelectronic and photovoltaic performance of borophene-based devices. In this study, photoexcited carrier dynamics of β12 , χ3 , and α΄ borophene/MoS2 heterostructures are systematically studied based on time-domain nonadiabatic molecular dynamics simulations. Different Schottky contacts are found in borophene/semiconductor heterostructures. The interplay between Schottky barriers, electronic coupling, and the involvement of different phonon modes collectively contribute to the unique carrier dynamics in borophene-based heterostructures. The diverse borophene allotropes within the heterostructures exhibit distinct and selective carrier transfer behaviors on an ultrafast timescale: electrons tunnel into α΄ borophene with an ultrafast transfer rate (≈29 fs) in α΄/MoS2 heterostructures, whereas β12 borophene only allows holes to migrate with a lifetime of 176 fs. The feature enables efficient charge separation and offers promising avenues for applications in optoelectronic and photovoltaic devices. This study provides insight into the interfacial carrier dynamics in borophene-based heterostructures, which is helpful in further design of advanced 2D boron-based optoelectronic and photovoltaic devices.
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Affiliation(s)
- Yuchong Kang
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Kun Yang
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Jing Fu
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Zongguo Wang
- Computer Network Information Center, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Xuao Li
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Zhiqiang Lu
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Jia Zhang
- Max Born Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany
| | - Haibo Li
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Jin Zhang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761, Hamburg, Germany
| | - Wei Ma
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
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16
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Jiang X, Tang W, Niu X, Chen H. Enhancement of multilayer lithium storage in a β 12-borophene/graphene heterostructure with built-in dipoles. Phys Chem Chem Phys 2024; 26:3400-3407. [PMID: 38204431 DOI: 10.1039/d3cp05319a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
The combination of borophene with a supporting metallic layer is beneficial in stabilizing its structure and promoting its application in energy storage. Here, through first-principles calculations, we screen a β12-borophene/graphene (β12-B/G) heterostructure with superior structural integrity, strong interlayer binding, and high thermodynamic stability among different B/G heterostructures. Besides, it is noteworthy that β12-B/G has been recently synthesized, further opening the possibility of expanding its use in energy storage. Then the selected target is systematically investigated as an anode material for lithium-ion batteries (LIBs). Compared with each monolayer component, multiple lithium-ion adsorption is achieved in the β12-B/G heterostructure, resulting in an ultra-high theoretical specific capacity of 2267 mA h g-1. In addition, a lower diffusion energy barrier indicates faster electron transport and lithium-ion diffusion in the β12-B/G heterostructure. Notably, the multilayer lithium adsorption avoids the formation of dendritic deposits, as evidenced by complete ionization of the cationic layers. Moreover, the disparity in the work functions of the individual layers gives rise to a built-in dipole in β12-B/G, further enhancing the multilayer lithium storage and ion migration. All these results suggest that the construction of borophene-based heterostructures with built-in dipoles is a feasible way to design high-performance LIB anode materials.
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Affiliation(s)
- Xiaowei Jiang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.
| | - Wenjun Tang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.
| | - Haiyuan Chen
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.
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17
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Li Q, Wang L, Li H, Chan MKY, Hersam MC. Synthesis of Quantum-Confined Borophene Nanoribbons. ACS NANO 2024; 18:483-491. [PMID: 37939213 DOI: 10.1021/acsnano.3c08089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Borophene nanoribbons (BNRs) are one-dimensional strips of atomically thin boron expected to exhibit quantum-confined electronic properties that are not present in extended two-dimensional borophene. While the parent material borophene has been experimentally shown to possess anisotropic metallicity and diverse polymorphic structures, the atomically precise synthesis of nanometer-wide BNRs has not yet been achieved. Here, we demonstrate the synthesis of multiple BNR polymorphs with well-defined edge configurations within the nanometer-scale terraces of vicinal Ag(977). Through atomic-scale imaging, spectroscopy, and first-principles calculations, the synthesized BNR polymorphs are characterized and found to possess distinct edge structures and electronic properties. For single-phase BNRs, v1/6-BNRs and v1/5-BNRs adopt reconstructed armchair edges and sawtooth edges, respectively. In addition, the electronic properties of single-phase v1/6-BNRs and v1/5-BNRs are dominated by Friedel oscillations and striped moiré patterns, respectively. On the other hand, mixed-phase BNRs possess quantum-confined states with increasing nodes in the electronic density of states at elevated biases. Overall, the high degree of polymorphism and diverse edge topologies in borophene nanoribbons provide a rich quantum platform for studying one-dimensional electronic states.
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Affiliation(s)
- Qiucheng Li
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Luqing Wang
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, United States
- Northwestern-Argonne Institute of Science and Engineering, 2205 Tech Drive, Evanston, Illinois 60208, United States
| | - Hui Li
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Maria K Y Chan
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, United States
- Northwestern-Argonne Institute of Science and Engineering, 2205 Tech Drive, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
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18
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Kamal S, Seo I, Bampoulis P, Jugovac M, Brondin CA, Menteş TO, Šarić Janković I, Matetskiy AV, Moras P, Sheverdyaeva PM, Michely T, Locatelli A, Gohda Y, Kralj M, Petrović M. Unidirectional Nano-modulated Binding and Electron Scattering in Epitaxial Borophene. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38041641 DOI: 10.1021/acsami.3c14884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/03/2023]
Abstract
A complex interplay between the crystal structure and the electron behavior within borophene renders this material an intriguing 2D system, with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which, in turn, inhibits the realization of potential borophene applications. In this multimethod study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on the Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nanograting. The scattering of photoelectrons from this structural grating gives rise to the replication of the electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature, followed by their reassembly into a fresh atomically thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provide comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.
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Affiliation(s)
- Sherif Kamal
- Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia
| | - Insung Seo
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
| | - Pantelis Bampoulis
- Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, 7522 NB Enschede, The Netherlands
- Institute of Physics II, University of Cologne, 50937 Cologne, Germany
| | - Matteo Jugovac
- Elettra─Sincrotrone Trieste S.C.p.A., S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Carlo Alberto Brondin
- Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, 30172 Venice, Italy
| | - Tevfik Onur Menteş
- Elettra─Sincrotrone Trieste S.C.p.A., S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Iva Šarić Janković
- Faculty of Physics and Centre for Micro- and Nanosciences and Technologies, University of Rijeka, 51000 Rijeka, Croatia
| | - Andrey V Matetskiy
- Istituto di Struttura della Materia-CNR (ISM-CNR), S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Paolo Moras
- Istituto di Struttura della Materia-CNR (ISM-CNR), S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Polina M Sheverdyaeva
- Istituto di Struttura della Materia-CNR (ISM-CNR), S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Thomas Michely
- Institute of Physics II, University of Cologne, 50937 Cologne, Germany
| | - Andrea Locatelli
- Elettra─Sincrotrone Trieste S.C.p.A., S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Yoshihiro Gohda
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
| | - Marko Kralj
- Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia
| | - Marin Petrović
- Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia
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19
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Chen B, Xue L, Han Y, Yang Z, Zhang YJ. Magnetic semiconducting borophenes and their derivatives. Phys Chem Chem Phys 2023; 25:30897-30902. [PMID: 37955266 DOI: 10.1039/d3cp04069k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Two semiconducting borophenes with layer-dependent magnetism are predicted based on spin-polarized density functional theory. Both monolayer borophenes are ferromagnetic. One is composed of B3 and B15 triangular motifs, exhibiting bipolar spin polarization and a magnetic moment of 1.00 μB per primitive cell. The other consists of B15 triangular motifs, possessing a Curie temperature of about 437 K and a magnetic moment of 3.00 μB per primitive cell. B atoms located between the triangular motifs are essential for inducing ferromagnetism in monolayer borophenes. However, bilayer borophenes with high-symmetry stacking orders are nonmagnetic. Furthermore, magnetic boron nanotubes and fullerenes could be made of monolayer borophenes. Finally, we propose to fabricate these magnetic semiconducting borophenes from the buckled triangular structure of borophenes via selective electron beam ionization of B atoms by scanning transmission electron microscopy.
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Affiliation(s)
- Bo Chen
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Lin Xue
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Yan Han
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Zhi Yang
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Yong-Jia Zhang
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
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20
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Shi X, Gao J, Qiu S, Chang Y, Zhao L, Fu ZG, Zhao J, Zhang P. Stability and superconductivity of freestanding two-dimensional transition metal boridene: M 4/3B 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:085602. [PMID: 37939399 DOI: 10.1088/1361-648x/ad0ace] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 11/08/2023] [Indexed: 11/10/2023]
Abstract
The small atomic mass of boron indicates strong electron-phonon coupling (EPC), so it may have a brilliant performance in superconductivity. Recently, a new 2D boride sheet with ordered metal vacancies and surface terminals (Mo4/3B2-x) was realized in experiments (Zhouet al2021Science373801). Here, the 2D monolayer freestanding Mo4/3B2is evidenced to be thermodynamically stable. Through electronic structure, phonon spectrum and EPC, monolayer Mo4/3B2is found to be an intrinsic phonon-mediated superconductor. The superconducting transition temperature (Tc) is determined to be 4.06 K by the McMillian-Allen-Dynes formula. Remarkably, theTcof monolayer Mo4/3B2can be increased to 6.78 K with an appropriate biaxial tensile strain (+5%). Moreover, we predict that other transition metal replacing Mo atoms is also stable and retaining the superconductivity. Such as monolayer W4/3B2is also a superconductor with theTcof 2.37 K. Our research results enrich the database of 2D monolayer superconductors and boron-related formed materials science.
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Affiliation(s)
- Xiaoran Shi
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Junfeng Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Shi Qiu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Yuan Chang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Luneng Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Zhen-Guo Fu
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Ping Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China
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21
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Zeng S, Li G, Zhao Y. Two-gap-like anisotropic superconductivity in a bulk boron kagome lattice. Phys Chem Chem Phys 2023; 25:29960-29967. [PMID: 37902846 DOI: 10.1039/d3cp03485b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/01/2023]
Abstract
Since a report of superconductivity in elemental boron at high pressure [M. I. Eremets et al., Science, 2001, 293, 272-274], many efforts have been devoted to the search for superconductivity in diverse boron allotropes. However, there are few superconducting phenomena to be discovered theoretically and experimentally in elemental bulk boron crystals at normal pressure to date. In this paper, we propose a metastable but dynamically stable metallic bulk boron phase within the kagome lattice, and demonstrate from first principles good superconductivity with a high superconducting critical temperature Tc, e.g., ∼34-39 K, in the elemental bulk boron at ambient pressure. Our calculations indicate that such a high-Tc superconductivity is closely related to the Fermi surface displaying strong electron-phonon coupling with a two-region-like distribution feature, which resulted from two different types of covalent bonding crossing the Fermi level and also gives rise to a two-gap-like superconducting nature in the system. We uncover that the strong electron-lattice coupling is dominated by the transversal acoustic phonon modes around a degenerate softening kink that places the system on the verge of a latent charge density wave. The present findings shed light on a study of the high-Tc superconductivity of the elemental bulk boron phase at normal pressure.
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Affiliation(s)
- Shuming Zeng
- College of Physics Science and Technology, Yangzhou University, Jiangsu 225009, China
| | - Geng Li
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tongyan Road 38, Tianjin 300350, China
- National Supercomputer Center in Tianjin, Tianjin 300457, China
| | - Yinchang Zhao
- Department of Physics, Yantai University, Yantai 264005, People's Republic of China.
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22
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Yan X, Wang S, Sun Y, Liu Y, Wang Y, Yang G. Semiconducting Bilayer Borophene with High Carrier Mobility. J Phys Chem Lett 2023; 14:9698-9704. [PMID: 37875810 DOI: 10.1021/acs.jpclett.3c02684] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Borophene has attracted much interest due to its rich configurations and novel properties such as Dirac fermions and superconductivity. The recently emerged bilayer borophene mitigates the oxidation problem when exposed to air, yet most studies ignore the influence of charge transfer induced by metal substrates on structural stability. Here we identified 31 monolayer borophene polymorphs that are stabilized on Au(111), Ag(111), or Cu(111) substrates through first-principle calculations. Interestingly, two novel semiconducting bilayer borophene polymorphs with band gaps of 0.37 and 0.42 eV were screened by integrating these monolayers. The formation of interlayer bonding contributed by the delocalized electrons is responsible for the semiconductivity. The predicted highest electron mobility reaches 2.01 × 104 cm2V-1 s-1, implying the possibility as a semiconductor device with a low power consumption. Moreover, light was also systemically thrown on the factors that may affect the electronic properties of bilayer borophenes and the positional preference of interlayer bonds.
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Affiliation(s)
- Xu Yan
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Sheng Wang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Yuanhui Sun
- Suzhou Laboratory, Suzhou 215123, China
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Yanchao Wang
- State Key Laboratory of Superhard Materials and International Center of Computational Method & Software, College of Physics, Jilin University, Changchun 130012, China
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, College of Physics, and National Demonstration Center for Experimental Physics Education, Jilin Normal University, Changchun 130103, P. R. China
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23
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Kambe T, Nishihara H, Yamamoto K. Chemical bottom-up approach for inorganic single-atomic layers aiming beyond graphene. Dalton Trans 2023; 52:15297-15302. [PMID: 37496399 DOI: 10.1039/d3dt01636f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
A chemical bottom-up approach for single-atomic-layered materials like graphene is attractive due to the possibility of introducing functions. This article includes the synthesis and properties of borophene-oxide and metalladithiolene layers, which are reported as inorganic materials. They have graphene-like two-dimensional networks that enable conjugated structures. Their atomically thin layers are also available by dissolution or synthetic methods. Their two-dimensional electronic features are evaluated from the activation energies for electrical conduction, focusing on the anisotropic features of borophene-oxide layers and the switching abilities of metalladithiolene layers.
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Affiliation(s)
- Tetsuya Kambe
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan.
| | - Hiroshi Nishihara
- Research Institute for Science and Technology, Tokyo University of Science, Chiba 278-8510, Japan.
| | - Kimihisa Yamamoto
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan.
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24
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Xiong T, Chen Y, Qiu R, Yuan H. Excellent 5f-electron magnet of actinide atom decorated gh-C 3N 4 monolayer. Phys Chem Chem Phys 2023; 25:28020-28033. [PMID: 37823441 DOI: 10.1039/d3cp02954a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Atomic functionality of two-dimensional (2D) materials, typically with a controllable doping route for offering regular atomic arrangement as well as excellent magnetism, is crucial for both fundamental studies and spintronic applications. Here, the adsorptions of the 5f-electron actinide series (An = Ac-Am) on porous graphene-like carbon-nitride (gh-C3N4) layers are explored to determine their structural stabilities, electronic nature and magnetic properties using the combination of density functional theory (DFT) calculations, ab initio molecular dynamics (AIMD), Monte Carlo (MC) simulations and chemical bonding analyses. Our investigations reveal that each An atom can be individually adsorbed at the vacancy site of gh-C3N4 sheet with high energetic, thermal and dynamical stabilities, which are rooted in the major interactions of ionic An-N bonding as well as the minor interactions of covalent bonding of An-5f6d states with N-2s2p states. The delocalization of a very few 5f electrons is dependent on whether they occupy the suborbitals that are matching and conducive to hybridize with the ligand orbitals forming the 5f-2s2p covalent bonds. We propose that the Ruderman-Kittel-Kasuya-Yosida (RKKY) mechanism plays a determining role for the inter-atomic 5f-5f magnetic exchange via the 6d electrons as the conduction electrons. Large magnetic moment and magnetic anisotropy energy (MAE) from the localized 5f electrons, together with the metallic characteristics owing to the delocalized 6d electrons, render these An-based 2D materials excellent metallic magnets, especially for the U@gh-C3N4 system with the modest magnetic moment of 0.6 μB, large MAE of 53 meV and high Curie temperature (TC) of 538 K.
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Affiliation(s)
- Tao Xiong
- School of Physical Science and Technology, Southwest University, Chongqing, 400715, China.
| | - Yaqing Chen
- School of Physical Science and Technology, Southwest University, Chongqing, 400715, China.
| | - Ruizhi Qiu
- Institute of Materials, China Academy of Engineering Physics, Mianyang, Sichuan, 621907, China.
| | - Hongkuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing, 400715, China.
- Chongqing Key Laboratory of Micro&Nano Structure Optoelectronics, Southwest University, Chongqing, 400715, China
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25
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Li Z, Xue Y, Yao Q, Zhao B, Xu W, Yang Z. A new type of stable borophene with flat-band-induced magnetism. NANOTECHNOLOGY 2023; 34:505701. [PMID: 37567160 DOI: 10.1088/1361-6528/acef2c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Accepted: 08/10/2023] [Indexed: 08/13/2023]
Abstract
Based on first-principles calculations, we propose a new type of thermally and dynamically stable magnetic borophene (B11) with a tetragonal lattice. The magnetism is found coming from spin polarization of one bonding flat band located at the Fermi level. Despite of the 'anti-molecular' behavior in the monolayer, the interactions between thepzorbitals of the B atoms in the double-octahedron structural unit lead to the formation of the flat bands with localization behaviors. One tight binding model is built to comprehend the magnetic mechanism, which can guide us to tune other nonmagnetic borophene becoming magnetic. Biaxial tensile strain (>2.1%) is found triggering a phase transition from a semimetal to a semiconductor in the B11monolayer. The mechanism is analyzed based on the orbital-resolved crystal field effect. Our work provides a new route for designing and achieving two-dimensional magnetic materials with light elements.
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Affiliation(s)
- Zhijian Li
- State Key Laboratory of Surface Physics and Key Laboratory of Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200030, People's Republic of China
| | - Yang Xue
- School of Science, East China University of Science and Technology, Shanghai 200237, People's Republic of China
| | - Qingzhao Yao
- State Key Laboratory of Surface Physics and Key Laboratory of Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200030, People's Republic of China
| | - Bao Zhao
- School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Liaocheng 252059, People's Republic of China
| | - Wei Xu
- State Key Laboratory of Surface Physics and Key Laboratory of Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200030, People's Republic of China
| | - Zhongqin Yang
- State Key Laboratory of Surface Physics and Key Laboratory of Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200030, People's Republic of China
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26
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Zhong C, Li X, Feng C, Yu P. A two-dimensional borophene monolayer with ideal Dirac nodal-line fermions. Phys Chem Chem Phys 2023; 25:13587-13592. [PMID: 37144284 DOI: 10.1039/d3cp00006k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
As a relatively new member of two-dimensional materials, borophene has gained huge interest over the past years, especially in the field of discovering new topological materials, such as Dirac nodal line semimetals. Here, based on first-principles calculations, for the first time, we find a completely flat borophene monolayer (named χ2/9) with ideal Dirac nodal line states around the Fermi level. A tight-binding model using the Slater-Koster approach is proposed to demonstrate that the unique electronic feature of χ2/9 that mainly originated from the first-nearest neighbor interactions of the pz orbitals of boron. According to our symmetry analysis, the Dirac nodal line in χ2/9 is guaranteed by the out-of-plane mirror or C2 rotational symmetry and the negligible pz orbital coupling. The chemical bonding analysis reveals the rare electronic properties of this material, which can be attributed to the multicentered π bonds.
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Affiliation(s)
- Chengyong Zhong
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.
| | - Xuelian Li
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.
| | - Chunbao Feng
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Peng Yu
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.
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27
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Wen J, Cai Q, Xiong R, Cui Z, Zhang Y, He Z, Liu J, Lin M, Wen C, Wu B, Sa B. Promising M 2CO 2/MoX 2 (M = Hf, Zr; X = S, Se, Te) Heterostructures for Multifunctional Solar Energy Applications. Molecules 2023; 28:molecules28083525. [PMID: 37110759 PMCID: PMC10146659 DOI: 10.3390/molecules28083525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Revised: 04/10/2023] [Accepted: 04/15/2023] [Indexed: 04/29/2023] Open
Abstract
Two-dimensional van der Waals (vdW) heterostructures are potential candidates for clean energy conversion materials to address the global energy crisis and environmental issues. In this work, we have comprehensively studied the geometrical, electronic, and optical properties of M2CO2/MoX2 (M = Hf, Zr; X = S, Se, Te) vdW heterostructures, as well as their applications in the fields of photocatalytic and photovoltaic using density functional theory calculations. The lattice dynamic and thermal stabilities of designed M2CO2/MoX2 heterostructures are confirmed. Interestingly, all the M2CO2/MoX2 heterostructures exhibit intrinsic type-II band structure features, which effectively inhibit the electron-hole pair recombination and enhance the photocatalytic performance. Furthermore, the internal built-in electric field and high anisotropic carrier mobility can separate the photo-generated carriers efficiently. It is noted that M2CO2/MoX2 heterostructures exhibit suitable band gaps in comparison to the M2CO2 and MoX2 monolayers, which enhance the optical-harvesting abilities in the visible and ultraviolet light zones. Zr2CO2/MoSe2 and Hf2CO2/MoSe2 heterostructures possess suitable band edge positions to provide the competent driving force for water splitting as photocatalysts. In addition, Hf2CO2/MoS2 and Zr2CO2/MoS2 heterostructures deliver a power conversion efficiency of 19.75% and 17.13% for solar cell applications, respectively. These results pave the way for exploring efficient MXenes/TMDCs vdW heterostructures as photocatalytic and photovoltaic materials.
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Affiliation(s)
- Jiansen Wen
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Qi Cai
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Rui Xiong
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Zhou Cui
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Yinggan Zhang
- College of Materials, Xiamen University, Xiamen 361005, China
| | - Zhihan He
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Junchao Liu
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Maohua Lin
- Department of Ocean and Mechanical Engineering, Florida Atlantic University, Boca Raton, FL 33431, USA
| | - Cuilian Wen
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Bo Wu
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
| | - Baisheng Sa
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China
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28
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Liu Y, Tai G, Hou C, Wu Z, Liang X. Chemical Vapor Deposition Growth of Few-Layer β 12-Borophane on Copper Foils toward Broadband Photodetection. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36897961 DOI: 10.1021/acsami.2c23234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Borophene has drawn tremendous attention in the past decade for a wide range of potential applications owing to its unique structural, optical, and electronic properties. However, applications of borophene toward next-generation nanodevices are mostly theoretical predictions, while experimental realization is still lacking due to rapid oxidation of intrinsic borophene in an air environment. Here, we have successfully prepared structurally stable and transferrable few-layer β12-borophane on copper foils by a typical two-zone chemical vapor deposition method, where bis(triphenylphosphine)copper tetrahydroborate was used as the boron source in a hydrogen-rich atmosphere to stabilize its structure through hydrogenation. The crystal structure of the as-prepared β12-borophane is in good agreement with previous reports. A fabricated photodetector based on β12-borophane-silicon (n-type) Schottky junction shows good photoelectric responses to light excitations in a wide wavelength range from 365 to 850 nm. Especially, the photodetector exhibits a good photoresponsivity of around 0.48 A W-1, a high specific detectivity of 4.39 × 1011 jones, a high external quantum efficiency of 162%, and short response and recovery times of 115 and 121 ms under an ultraviolet light with the wavelength of 365 nm at a reverse bias of 5 V. The results show great potential applications of borophane in next-generation nanophotonic and nanoelectronic devices.
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Affiliation(s)
- Yi Liu
- State Key Laboratory of Mechanics and Control for Aerospace Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Guoan Tai
- State Key Laboratory of Mechanics and Control for Aerospace Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Chuang Hou
- State Key Laboratory of Mechanics and Control for Aerospace Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zitong Wu
- State Key Laboratory of Mechanics and Control for Aerospace Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Xinchao Liang
- State Key Laboratory of Mechanics and Control for Aerospace Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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29
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Wei X, Jin L, Zhang X, Liu Y, Dai X, Liu G. A two-dimensional tunable double Weyl fermion in BL-α borophene. Phys Chem Chem Phys 2023; 25:7338-7343. [PMID: 36825463 DOI: 10.1039/d2cp05559g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/15/2023]
Abstract
Two-dimensional (2D) materials with nontrivial band crossings, namely linear or double Weyl points, have been attracting tremendous attention. However, it remains a challenge to find existing 2D materials that host such nontrivial states. Here, based on first-principles calculations and symmetry analysis, we discover that the recently synthesized BL-α borophene is a metal with a tunable double Weyl point. Remarkably, both bands forming the double Weyl point have upward band bending. In addition, it shows an anisotropic band dispersion when away from the double Weyl point. To characterize its anisotropy, we define a quantity G, which could be changed from 1 to infinity when going from the energy of the double Weyl point to the Fermi level. Furthermore, the outer band of the double Weyl point is sensitive to biaxial strain, and could be changed from upward bending to downward bending. During this process, it has a critical case, in which the outer-band becomes flat. The changes in outer-band induce a variation in the density of states around the double Weyl point, thus giving rise to changes in its macroscopic physical properties. Applying a uniaxial strain enables the double Weyl point to transform into a pair of Weyl points by breaking the threefold rotation of BL-α borophene. When breaking the inversion symmetry and in-plane twofold rotation symmetry by a vertical symmetry, the double Weyl point still persisted; meanwhile, an additional pair of linear Weyl points appears on the high-symmetry path, giving rise to a Weyl complex case. Overall, our work thus provides an existing 2D material, BL-α borophene, to study the nontrivial band crossings in 2D.
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Affiliation(s)
- Xiaoyu Wei
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China. .,School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Lei Jin
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China. .,School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China. .,School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Ying Liu
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Xuefang Dai
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China. .,School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
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30
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Sugawara K, Kusaka H, Kawakami T, Yanagizawa K, Honma A, Souma S, Nakayama K, Miyakawa M, Taniguchi T, Kitamura M, Horiba K, Kumigashira H, Takahashi T, Orimo SI, Toyoda M, Saito S, Kondo T, Sato T. Direct Imaging of Band Structure for Powdered Rhombohedral Boron Monosulfide by Microfocused ARPES. NANO LETTERS 2023; 23:1673-1679. [PMID: 36849129 PMCID: PMC10000586 DOI: 10.1021/acs.nanolett.2c04048] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 02/04/2023] [Indexed: 06/18/2023]
Abstract
Boron-based two-dimensional (2D) materials are an excellent platform for nanoelectronics applications. Rhombohedral boron monosulfide (r-BS) is attracting particular attention because of its unique layered crystal structure suitable for exploring various functional properties originating in the 2D nature. However, studies to elucidate its fundamental electronic states have been largely limited because only tiny powdered crystals were available, hindering a precise investigation by spectroscopy such as angle-resolved photoemission spectroscopy (ARPES). Here we report the direct mapping of the band structure with a tiny (∼20 × 20 μm2) r-BS powder crystal by utilizing microfocused ARPES. We found that r-BS is a p-type semiconductor with a band gap of >0.5 eV characterized by the anisotropic in-plane effective mass. The present results demonstrate the high applicability of micro-ARPES to tiny powder crystals and widen an opportunity to access the yet-unexplored electronic states of various novel materials.
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Affiliation(s)
- Katsuaki Sugawara
- Department
of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
- Advanced Institute for Materials Research (WPI-AIMR), Center for Science and
Innovation in Spintronics, Institute of Multidisciplinary Research for Advanced
Materials (IMRAM), Institute for Material Research, and International Center for Synchrotron Radiation
Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan
- Precursory
Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), Tokyo 102-0076, Japan
| | - Haruki Kusaka
- Department
of Materials Science and Tsukuba Research Center for Energy Materials
Science (TREMS), Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Tappei Kawakami
- Department
of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
| | - Koki Yanagizawa
- Department
of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
| | - Asuka Honma
- Department
of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
| | - Seigo Souma
- Advanced Institute for Materials Research (WPI-AIMR), Center for Science and
Innovation in Spintronics, Institute of Multidisciplinary Research for Advanced
Materials (IMRAM), Institute for Material Research, and International Center for Synchrotron Radiation
Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan
| | - Kosuke Nakayama
- Department
of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
| | - Masashi Miyakawa
- Research
Center for Functional Materials, National
Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Miho Kitamura
- Photon
Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801, Japan
| | - Koji Horiba
- National
Institutes for Quantum Science and Technology (QST), Sendai 980-8579, Japan
| | - Hiroshi Kumigashira
- Advanced Institute for Materials Research (WPI-AIMR), Center for Science and
Innovation in Spintronics, Institute of Multidisciplinary Research for Advanced
Materials (IMRAM), Institute for Material Research, and International Center for Synchrotron Radiation
Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan
| | - Takashi Takahashi
- Department
of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
| | - Shin-ichi Orimo
- Advanced Institute for Materials Research (WPI-AIMR), Center for Science and
Innovation in Spintronics, Institute of Multidisciplinary Research for Advanced
Materials (IMRAM), Institute for Material Research, and International Center for Synchrotron Radiation
Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan
| | - Masayuki Toyoda
- Department
of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, Japan
| | - Susumu Saito
- Department
of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, Japan
- Advanced
Research Center for Quantum Physics and Nanoscience, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, Japan
- Materials
Research Centre for Element Strategy, Tokyo
Institute of Technology, Yokohama 226-8503, Japan
| | - Takahiro Kondo
- Advanced Institute for Materials Research (WPI-AIMR), Center for Science and
Innovation in Spintronics, Institute of Multidisciplinary Research for Advanced
Materials (IMRAM), Institute for Material Research, and International Center for Synchrotron Radiation
Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan
- Department
of Materials Science and Tsukuba Research Center for Energy Materials
Science (TREMS), Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Takafumi Sato
- Department
of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
- Advanced Institute for Materials Research (WPI-AIMR), Center for Science and
Innovation in Spintronics, Institute of Multidisciplinary Research for Advanced
Materials (IMRAM), Institute for Material Research, and International Center for Synchrotron Radiation
Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan
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31
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An investigation of halogen induced improvement of β12 borophene for Na/Li storage by density functional theory. J Mol Graph Model 2023; 119:108373. [PMID: 36508891 DOI: 10.1016/j.jmgm.2022.108373] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2022] [Revised: 09/23/2022] [Accepted: 10/06/2022] [Indexed: 11/23/2022]
Abstract
Pristine and halogen doped β12 borophene, as anode of lithium-ion batteries (LIBs) and sodium-ion batteries (SIBs), was considered by first-principles study based on density functional theory. Li and Na were adsorbed on β12 borophene with adsorption energies of -3.18 eV and -2.33 eV, respectively. The effect of halogen addition, X = F, Cl, Br, and I, to borophene sheet on adsorption and also diffusion pathways of Li and Na was studied. The adsorption energy calculations show that the halogen atoms improve Li/Na adsorption on borophene sheet. Also, the results indicate that Li/Na adsorption energies on Brominated borophene sheet are higher compared to other halogen types. Diffusion calculations show that Br addition induces an electron deficiency on BoBr surface which lowers the energy barrier of migration of Li and Na ions compared to the pristine borophene. According to density of states analysis, electron charge is transferred from Li and Na atoms toward halogenated borophene sheet. Also, it can be concluded that electron transfer from Li/Na to borophene host in BoX is higher compared to pristine borophene which is in agreement with adsorption energies. The fully lithiated/sodiated complexes of BoBr are Li0.71BoBr and Na0.50BoBr which is equivalent to theoretical specific capacities of 1401 and 981 mAh/g which are about 3.5 and 2.6 times higher than graphite for Li and Na adsorption, respectively. Higher specific capacity of Li compared to Na is mainly attributed to steric hindrance of Na regarding its greater size. Open circuit voltage values of 1.6 V and 1.4 V were obtained for Li and Na intercalation processes, respectively, into halogen added β12 borophene indicating that this structure can be applied as anode for both LIB and SIB systems.
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32
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Park Y, Wang Y, Gladkikh V, Hedman D, Kong X, Ding F. High temperature phases of borophene: borophene glass and liquid. NANOSCALE HORIZONS 2023; 8:353-360. [PMID: 36722748 DOI: 10.1039/d2nh00518b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Borophene is a family of two-dimensional (2D) boron materials containing many isomers with different hole concentrations and distributions in a triangular lattice. Although it has been widely studied theoretically and some have been synthesized experimentally, their thermodynamic properties are still unexplored. Based on density functional theory (DFT), we developed an accurate potential for the kinetic Monte Carlo (kMC) simulations of borophene. Through extensive kMC simulations, new phases were discovered, such as the glass state of borophene, liquid borophene and borophene with large holes. A phase diagram of borophene is constructed to guide future experiments on borophene materials at high temperature.
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Affiliation(s)
- Yunjae Park
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea.
| | - Yong Wang
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea.
- School of Science, Hunan University of Technology and Business, Changsha, Hunan 410205, China
| | - Vladislav Gladkikh
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea.
| | - Daniel Hedman
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea.
| | - Xiao Kong
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea.
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
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33
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Wines D, Choudhary K, Biacchi AJ, Garrity KF, Tavazza F. High-Throughput DFT-Based Discovery of Next Generation Two-Dimensional (2D) Superconductors. NANO LETTERS 2023; 23:969-978. [PMID: 36715314 PMCID: PMC9988690 DOI: 10.1021/acs.nanolett.2c04420] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
High-throughput density functional theory (DFT) calculations allow for a systematic search for conventional superconductors. With the recent interest in two-dimensional (2D) superconductors, we used a high-throughput workflow to screen over 1000 2D materials in the JARVIS-DFT database and performed electron-phonon coupling calculations, using the McMillan-Allen-Dynes formula to calculate the superconducting transition temperature (Tc) for 165 of them. Of these 165 materials, we identify 34 dynamically stable structures with transition temperatures above 5 K, including materials such as W2N3, NbO2, ZrBrO, TiClO, NaSn2S4, Mg2B4C2, and the previously unreported Mg2B4N2 (Tc = 21.8 K). Finally, we performed experiments to determine the Tc of selected layered superconductors (2H-NbSe2, 2H-NbS2, ZrSiS, FeSe) and discuss the measured results within the context of our DFT results. We aim that the outcome of this workflow can guide future computational and experimental studies of new and emerging 2D superconductors by providing a roadmap of high-throughput DFT data.
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Affiliation(s)
- Daniel Wines
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Kamal Choudhary
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
- Theiss Research, La Jolla, California 92037, United States
| | - Adam J Biacchi
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Kevin F Garrity
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Francesca Tavazza
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
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Highly Efficient, Remarkable Sensor Activity and energy storage properties of MXenes and Borophene nanomaterials. PROG SOLID STATE CH 2023. [DOI: 10.1016/j.progsolidstchem.2023.100392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/15/2023]
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35
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Adekoya G, Adekoya OC, Sadiku RE, Hamam Y, Ray SS. Numerical Investigation and Response Surface Optimization of the Effective Modulus and Electrical and Thermal Conductivities of the Borophene Nanoplatelet-Reinforced PEDOT:PSS Nanocomposite for Energy Storage Application. ACS OMEGA 2022; 7:48447-48466. [PMID: 36619495 PMCID: PMC9811987 DOI: 10.1021/acsomega.2c06716] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 11/15/2022] [Indexed: 06/17/2023]
Abstract
Conductive organic nanocomposites have been widely employed to achieve a variety of purposes, particularly for energy storage applications, making it necessary to investigate transport properties such as electron and heat transport qualities based on geometric shapes and component materials. Due to the solid B-B bonds, unique atomic structure, and energy storage potential, borophene has received significant attention due to its reported ultrahigh mechanical modulus and metallic conduction. Herein, we investigated the effect and interaction of content materials (volume fraction) and geometric parameters such as the aspect ratio and orientation of borophene nanoplatelet (BNP) inclusions on the mechanical integrity and transport features (electrical and thermal conductivities) of a poly(3,4-ethylene dioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) electrode. The boundary condition is crucial in developing the predictive models for the optimized mechanical and transport properties of the composites. The effective modulus, electrical conductivity, and thermal conductivity of the BNP-reinforced PEDOT:PSS-based nanocomposite are evaluated using the periodic boundary condition, the representative volume element-based finite element homogenization, and statistical analysis response surface techniques. The optimal parameters for the PEDOT:PSS/BNP nanocomposite for energy storage application are predicted based on the desirability function to have a 13.96% volume fraction of BNPs, having an aspect ratio of 0.04 at 45° inclination. The desirability value achieved for the material hinges was 0.78 with a predicted Young's modulus of 6.73 GPa, the electrical conductivity was 633.85 S/cm, and the thermal conductivity was 1.96 W/m K at a generally high predictive performance of <0.03 error. The effective thermal conductivity of the nanocomposite was determined by considering Kapitsa nanoeffects, which exhibit an interfacial thermal resistance of 2.42 × 10-9 m2 K/W. Based on these improved findings, the enhanced PEDOT:PSS/BNP nanocomposite electrode would be a promising material for metal-ion batteries.
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Affiliation(s)
- Gbolahan
Joseph Adekoya
- Institute
of NanoEngineering Research (INER) & Department of Chemical, Metallurgical
and Materials Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria0183, South Africa
- Centre
for Nanostructures and Advanced Materials, DSI-CSIR Nanotechnology
Innovation Centre, Council for Scientific
and Industrial Research, CSIR, Pretoria0001, South Africa
| | - Oluwasegun Chijioke Adekoya
- Institute
of NanoEngineering Research (INER) & Department of Chemical, Metallurgical
and Materials Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria0183, South Africa
| | - Rotimi Emmanuel Sadiku
- Institute
of NanoEngineering Research (INER) & Department of Chemical, Metallurgical
and Materials Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria0183, South Africa
| | - Yskandar Hamam
- Department
of Electrical Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria0183, South Africa
- École
Supérieure d’Ingénieurs en Électrotechnique
et Électronique, Cité Descartes, 2 Boulevard Blaise Pascal, Noisy-le-Grand, Paris93160, France
| | - Suprakas Sinha Ray
- Centre
for Nanostructures and Advanced Materials, DSI-CSIR Nanotechnology
Innovation Centre, Council for Scientific
and Industrial Research, CSIR, Pretoria0001, South Africa
- Department
of Chemical Sciences, University of Johannesburg, Doornforntein2028, Johannesburg, South Africa
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Chen J, Wang C, Li H, Xu X, Yang J, Huo Z, Wang L, Zhang W, Xiao X, Ma Y. Recent Advances in Surface Modifications of Elemental Two-Dimensional Materials: Structures, Properties, and Applications. Molecules 2022; 28:200. [PMID: 36615394 PMCID: PMC9822514 DOI: 10.3390/molecules28010200] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2022] [Revised: 12/17/2022] [Accepted: 12/21/2022] [Indexed: 12/28/2022] Open
Abstract
The advent of graphene opens up the research into two-dimensional (2D) materials, which are considered revolutionary materials. Due to its unique geometric structure, graphene exhibits a series of exotic physical and chemical properties. In addition, single-element-based 2D materials (Xenes) have garnered tremendous interest. At present, 16 kinds of Xenes (silicene, borophene, germanene, phosphorene, tellurene, etc.) have been explored, mainly distributed in the third, fourth, fifth, and sixth main groups. The current methods to prepare monolayers or few-layer 2D materials include epitaxy growth, mechanical exfoliation, and liquid phase exfoliation. Although two Xenes (aluminene and indiene) have not been synthesized due to the limitations of synthetic methods and the stability of Xenes, other Xenes have been successfully created via elaborate artificial design and synthesis. Focusing on elemental 2D materials, this review mainly summarizes the recently reported work about tuning the electronic, optical, mechanical, and chemical properties of Xenes via surface modifications, achieved using controllable approaches (doping, adsorption, strain, intercalation, phase transition, etc.) to broaden their applications in various fields, including spintronics, electronics, optoelectronics, superconducting, photovoltaics, sensors, catalysis, and biomedicines. These advances in the surface modification of Xenes have laid a theoretical and experimental foundation for the development of 2D materials and their practical applications in diverse fields.
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Affiliation(s)
- Junbo Chen
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Chenhui Wang
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Hao Li
- School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Xin Xu
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Jiangang Yang
- School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Zhe Huo
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Lixia Wang
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Weifeng Zhang
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Xudong Xiao
- School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Yaping Ma
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
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Wang V, Tang G, Liu YC, Wang RT, Mizuseki H, Kawazoe Y, Nara J, Geng WT. High-Throughput Computational Screening of Two-Dimensional Semiconductors. J Phys Chem Lett 2022; 13:11581-11594. [PMID: 36480578 DOI: 10.1021/acs.jpclett.2c02972] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention mainly due to their unique physical properties and ability to fulfill the demands of future nanoscale devices. By performing high-throughput first-principles calculations combined with a semiempirical van der Waals dispersion correction, we have screened 73 direct- and 183 indirect-gap 2D nonmagnetic semiconductors from nearly 1000 monolayers according to the criteria for thermodynamic, mechanical, dynamic, and thermal stabilities and conductivity type. We present the calculated lattice constants, formation energy, Young's modulus, Poisson's ratio, shear modulus, anisotropic effective mass, band structure, band gap, ionization energy, electron affinity, and simulated scanning tunnel microscopy for each candidate meeting our criteria. The resulting 2D semiconductor database (2DSdb) can be accessed via the Web site https://materialsdb.cn/2dsdb/index.html. The 2DSdb provides an ideal platform for computational modeling and design of new 2D semiconductors and heterostructures in photocatalysis, nanoscale devices, and other applications. Further, a linear fitting model was proposed to evaluate band gap, ionization energy, and electron affinity of 2D semiconductors from the density functional theory (DFT) calculated data as initial input. This model can be as precise as hybrid DFT but with much lower computational cost.
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Affiliation(s)
- Vei Wang
- Department of Applied Physics, Xi'an University of Technology, Xi'an710054, China
| | - Gang Tang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing100081, China
| | - Ya-Chao Liu
- Department of Applied Physics, Xi'an University of Technology, Xi'an710054, China
| | - Ren-Tao Wang
- Department of Applied Physics, Xi'an University of Technology, Xi'an710054, China
| | - Hiroshi Mizuseki
- Korea Institute of Science and Technology (KIST), Seoul02792, Republic of Korea
| | - Yoshiyuki Kawazoe
- New Industry Creation Hatchery Center, Tohoku University, Sendai, Miyagi980-8579, Japan
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu603203, India
- Department of Physics, Suranaree University of Technology, Nakhon Ratchasima30000, Thailand
| | - Jun Nara
- National Institute for Materials Science, Tsukuba305-0044, Japan
| | - Wen Tong Geng
- School of Materials Science and Engineering, Hainan University, Haikou570228, China
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Yang R, Ren X, Sun M. Optical spectra of bilayer borophene synthesized on Ag(111) film. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2022; 282:121711. [PMID: 35940069 DOI: 10.1016/j.saa.2022.121711] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2022] [Revised: 07/24/2022] [Accepted: 08/01/2022] [Indexed: 06/15/2023]
Abstract
In this paper, we theoretically investigated electronic structures, density of states (DOS), optical absorption, dielectric function of bilayer borophene synthesized on Ag(111) film, stimulated by the recent experimental report [Nature materials 2022, 21:35]. The results show that there is strong coupling between the Ag film and borophene layers. In the absorption spectra of BL borophene on Ag(111) substrate, there are strong absorption peaks in visible and infrared (IR) regions, which reveals strong plexciton peaks in visible and IR regions, which is contributed from the plasmonic and excitonic coupling interaction by the hybrid between Ag film and BL borophene. Raman modes of strongest vibration directly reflects the interlayer interaction of interlayer chemical bond. Our results not only provide physical insight into BL borophene synthesized on Ag(111) film, but also propose the potential applications of BL borophene in optoelectronic devices.
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Affiliation(s)
- Rui Yang
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xin Ren
- Beijing No. 12 High School, Beijing 100071, China
| | - Mengtao Sun
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China.
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39
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Kang Y, Ma X, Fu J, Yang K, Wang Z, Li H, Ma W, Zhang J. Substrate-Mediated Borophane Polymorphs through Hydrogenation of Two-Dimensional Boron Sheets. J Phys Chem Lett 2022; 13:10222-10229. [PMID: 36300795 DOI: 10.1021/acs.jpclett.2c02417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The two-dimensional boron monolayer (borophene) stands out from the two-dimensional atomic layered materials due to its structural flexibility and tunable electronic and mechanical properties from a large number of allotropic materials. The stability of pristine borophene polymorphs could possibly be improved via hydrogenation with atomic hydrogen (referred to as borophane). However, the precise adsorption structures and the underlying mechanism are still elusive. Employing first-principles calculations, we demonstrate the optimal configurations of freestanding borophanes and the ones grown on metallic substrates. For freestanding borophenes, the energetically favored hydrogen adsorption sites are sensitive to the polymorphs and corresponding coordination numbers of boron atoms. With various metal substrates, the hydrogenation configurations of borophenes are modulated significantly, attributed to the overlap between B pz and H s orbitals. These findings provide a deep insight into the hydrogenating borophenes and facilitate the stabilization of two-dimensional boron polymorphs by engineering hydrogen adsorption sites and concentrations.
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Affiliation(s)
- Yuchong Kang
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, Ningxia750021, P.R. China
| | - Xiaoyun Ma
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, Ningxia750021, P.R. China
| | - Jing Fu
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, Ningxia750021, P.R. China
| | - Kun Yang
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, Ningxia750021, P.R. China
| | - Zongguo Wang
- Computer Network Information Center, Chinese Academy of Science, Beijing100190, China
| | - Haibo Li
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, Ningxia750021, P.R. China
| | - Wei Ma
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, Ningxia750021, P.R. China
| | - Jin Zhang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761Hamburg, Germany
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40
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Ibrahim MAA, Mahmoud AHM, Mekhemer GAH, Shawky AM, Soliman MES, Moussa NAM. Adsorption Behavior of Toxic Carbon Dichalcogenides (CX 2; X = O, S, or Se) on β12 Borophene and Pristine Graphene Sheets: A DFT Study. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3411. [PMID: 36234539 PMCID: PMC9565509 DOI: 10.3390/nano12193411] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Revised: 09/21/2022] [Accepted: 09/23/2022] [Indexed: 05/27/2023]
Abstract
The adsorption of toxic carbon dichalcogenides (CX2; X = O, S, or Se) on β12 borophene (β12) and pristine graphene (GN) sheets was comparatively investigated. Vertical and parallel configurations of CX2⋯β12/GN complexes were studied herein via density functional theory (DFT) calculations. Energetic quantities confirmed that the adsorption process in the case of the parallel configuration was more desirable than that in the vertical analog and showed values up to −10.96 kcal/mol. The strength of the CX2⋯β12/GN complexes decreased in the order CSe2 > CS2 > CO2, indicating that β12 and GN sheets showed significant selectivity for the CSe2 molecule with superb potentiality for β12 sheets. Bader charge transfer analysis revealed that the CO2⋯β12/GN complexes in the parallel configuration had the maximum negative charge transfer values, up to −0.0304 e, outlining the electron-donating character of CO2. The CS2 and CSe2 molecules frequently exhibited dual behavior as electron donors in the vertical configuration and acceptors in the parallel one. Band structure results addressed some differences observed for the electronic structures of the pure β12 and GN sheets after the adsorption process, especially in the parallel configuration compared with the vertical one. According to the results of the density of states, new peaks were observed after adsorbing CX2 molecules on the studied 2D sheets. These results form a fundamental basis for future studies pertaining to applications of β12 and GN sheets for detecting toxic carbon dichalcogenides.
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Affiliation(s)
- Mahmoud A. A. Ibrahim
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University, Minia 61519, Egypt
- School of Health Sciences, University of KwaZulu-Natal, Westville, Durban 4000, South Africa
| | - Amna H. M. Mahmoud
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University, Minia 61519, Egypt
| | - Gamal A. H. Mekhemer
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University, Minia 61519, Egypt
| | - Ahmed M. Shawky
- Science and Technology Unit (STU), Umm Al-Qura University, Makkah 21955, Saudi Arabia
| | - Mahmoud E. S. Soliman
- Molecular Bio-Computation and Drug Design Research Laboratory, School of Health Sciences, University of KwaZulu-Natal, Westville, Durban 4000, South Africa
| | - Nayra A. M. Moussa
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University, Minia 61519, Egypt
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41
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Wang MH, Cui ZH, Wang S, Li Q, Zhao J, Chen Z. A two-dimensional Be 2Au monolayer with planar hexacoordinate s-block metal atoms: a superconducting global minimum Dirac material with two perfect Dirac node-loops. Chem Sci 2022; 13:11099-11109. [PMID: 36320472 PMCID: PMC9517706 DOI: 10.1039/d2sc03614b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Accepted: 08/26/2022] [Indexed: 11/21/2022] Open
Abstract
Using a starlike Be6Au7 - cluster as a building block and following the bottom-up strategy, an intriguing two-dimensional (2D) binary s-block metal Be2Au monolayer with a P6/mmm space group was theoretically designed. Both the Be6Au7 - cluster and the 2D monolayer are global minima featuring rule-breaking planar hexacoordinate motifs (anti-van't Hoff/Le Bel arrangement), and their high stabilities are attributed to good electron delocalization and electronic-stabilization-induced steric force. Strikingly, the Be2Au monolayer is a rare Dirac material with two perfect Dirac node-loops in the band structure and is a phonon-mediated superconductor with a critical temperature of 4.0 K. The critical temperature can be enhanced up to 11.0 K by applying compressive strain at only 1.6%. This study not only identifies a new binary s-block metal 2D material, namely Be2Au, which features planar hexacoordination, and a candidate superconducting material for further explorations, but also provides a new strategy to construct 2D materials with novel chemical bonding.
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Affiliation(s)
- Meng-Hui Wang
- Institute of Atomic and Molecular Physic, Jilin University Changchun 130012 China
| | - Zhong-Hua Cui
- Institute of Atomic and Molecular Physic, Jilin University Changchun 130012 China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Jilin University Changchun 130012 China
| | - Sheng Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University Changchun 130023 People's Republic of China
| | - Quan Li
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University Changchun 130023 People's Republic of China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education Dalian 116024 China
| | - Zhongfang Chen
- Department of Chemistry, University of Puerto Rico San Juan PR 00931 USA
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42
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Mu Y, Wang BT, Li SD, Ding F. A family of superconducting boron crystals made of stacked bilayer borophenes. NANOSCALE 2022; 14:9754-9761. [PMID: 35766045 DOI: 10.1039/d2nr02013k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer borophenes tend to be easily oxidized, while thicker borophenes have stronger antioxidation properties. Herein, we proposed four novel metallic boron crystals by stacking the experimentally synthesized borophenes, and one of the crystals has been reported in our previous experiments. Bilayer units tend to act as blocks for crystals as determined by bonding analyses. Their kinetic, thermodynamic and mechanical stabilities are confirmed by our calculated phonon spectra, molecular dynamics and elastic constants. Our proposed allotropes are more stable than the boron α-Ga phase below 1000 K at ambient pressure. Some of them become more stable than the α-rh or γ-B28 phases at appropriate external pressure. More importantly, our calculations show that three of the proposed crystals are phonon-mediated superconductors with critical temperatures of about 5-10 K, higher than those of most superconducting elemental solids, in contrast to typical boron crystals with significant band gaps. Our study indicates a novel preparation method for metallic and superconducting boron crystals dispensing with high pressure.
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Affiliation(s)
- Yuewen Mu
- Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, Institute of Molecular Science, Shanxi University, Taiyuan, 030006, China.
| | - Bao-Tian Wang
- Spallation Neutron Source Science Center, Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Dongguan, Guangdong 523803, China
| | - Si-Dian Li
- Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, Institute of Molecular Science, Shanxi University, Taiyuan, 030006, China.
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, South Korea.
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Lozovoy KA, Izhnin II, Kokhanenko AP, Dirko VV, Vinarskiy VP, Voitsekhovskii AV, Fitsych OI, Akimenko NY. Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2221. [PMID: 35808055 PMCID: PMC9268513 DOI: 10.3390/nano12132221] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 06/23/2022] [Accepted: 06/24/2022] [Indexed: 02/01/2023]
Abstract
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications.
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Affiliation(s)
- Kirill A. Lozovoy
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Ihor I. Izhnin
- Scientific Research Company “Electron-Carat”, Stryjska St. 202, 79031 Lviv, Ukraine;
| | - Andrey P. Kokhanenko
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Vladimir V. Dirko
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Vladimir P. Vinarskiy
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Alexander V. Voitsekhovskii
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Olena I. Fitsych
- P. Sagaidachny National Army Academy, Gvardijska St. 32, 79012 Lviv, Ukraine;
| | - Nataliya Yu. Akimenko
- Department of Engineering Systems and Technosphere Safety, Pacific National University, Tihookeanskaya St. 136, 680035 Khabarovsk, Russia;
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44
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Xu Y, Xuan X, Yang T, Zhang Z, Li SD, Guo W. Quasi-Freestanding Bilayer Borophene on Ag(111). NANO LETTERS 2022; 22:3488-3494. [PMID: 35341246 DOI: 10.1021/acs.nanolett.1c05022] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The lattice structure of monolayer borophene depends sensitively on the substrate yet is metallic independent of the environment. Here, we show that bilayer borophene on Ag(111) shares the same ground state as its freestanding counterpart that becomes semiconducting with an indirect bandgap of 1.13 eV, as evidenced by an extensive structural search based on first-principles calculations. The bilayer structure is composed of two covalently bonded v1/12 boron monolayers that are stacked in an AB mode. The interlayer bonds not only localize electronic states that are otherwise metallic in monolayer borophene but also in part decouple the whole bilayer from the substrate, resulting in a quasi-freestanding system. More relevant is that the predicted bilayer model of a global minimum agrees well with recently synthesized bilayer borophene on Ag(111) in terms of lattice constant, topography, and moiré pattern.
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Affiliation(s)
- Ying Xu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Xiaoyu Xuan
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Tingfan Yang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Si-Dian Li
- Institute of Molecular Science, Shanxi University, Taiyuan 030006, China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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45
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Bhavyashree M, Rondiya SR, Hareesh K. Exploring the emerging applications of the advanced 2-dimensional material borophene with its unique properties. RSC Adv 2022; 12:12166-12192. [PMID: 35481099 PMCID: PMC9023120 DOI: 10.1039/d2ra00677d] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2022] [Accepted: 03/28/2022] [Indexed: 12/11/2022] Open
Abstract
Borophene, a crystalline allotrope of monolayer boron, with a combination of triangular lattice and hexagonal holes, has stimulated wide interest in 2-dimensional materials and their applications. Although their properties are theoretically confirmed, they are yet to be explored and confirmed experimentally. In this review article, we present advancements in research on borophene, its synthesis, and unique properties, including its advantages for various applications with theoretical predictions. The uniqueness of borophene over graphene and other 2-dimensional (2D) materials is also highlighted along with their various structural stabilities. The strategy for its theoretical simulations, leading to the experimental synthesis, could also be helpful for the exploration of many newer 2D materials.
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Affiliation(s)
- M Bhavyashree
- School of Applied Sciences (Physics), REVA University Bengaluru-560064 India
- Department of Physics, R.V. College of Engineering Bengaluru-560059 India
- Center of Excellence on Macro-Electronics, Interdisciplinary Research Center, R.V. College of Engineering Bengaluru-560059 India
| | - Sachin R Rondiya
- School of Chemistry, Cardiff University Cardiff CF10 3AT Wales UK
| | - K Hareesh
- School of Applied Sciences (Physics), REVA University Bengaluru-560064 India
- Department of Physics, R.V. College of Engineering Bengaluru-560059 India
- Center of Excellence on Macro-Electronics, Interdisciplinary Research Center, R.V. College of Engineering Bengaluru-560059 India
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Fatima K, Soomro AM, Rafique M, Kumar M. Hydrogen storage on flat land materials, opportunities, and challenges: A review study. J CHIN CHEM SOC-TAIP 2022. [DOI: 10.1002/jccs.202200039] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Kaneez Fatima
- Department of Electronic Engineering Mehran University of Engineering and Technology, SZAB Campus Pakistan
| | - Amir Mahmood Soomro
- Department of Electrical Engineering Mehran University of Engineering and Technology Jamshoro Pakistan
| | - Muhammad Rafique
- Department of Electronic Engineering Mehran University of Engineering and Technology, SZAB Campus Pakistan
| | - Mahesh Kumar
- Department of Electrical Engineering Mehran University of Engineering and Technology Jamshoro Pakistan
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Liu X, Rahn MS, Ruan Q, Yakobson BI, Hersam MC. Probing borophene oxidation at the atomic scale. NANOTECHNOLOGY 2022; 33:235702. [PMID: 35180715 DOI: 10.1088/1361-6528/ac56bd] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 02/18/2022] [Indexed: 06/14/2023]
Abstract
Two-dimensional boron (i.e. borophene) holds promise for a variety of emerging nanoelectronic and quantum technologies. Since borophene is synthesized under ultrahigh vacuum (UHV) conditions, it is critical that the chemical stability and structural integrity of borophene in oxidizing environments are understood for practical borophene-based applications. In this work, we assess the mechanism of borophene oxidation upon controlled exposure to air and molecular oxygen in UHV via scanning tunneling microscopy andspectroscopy, x-ray photoelectron spectroscopy, and density functional theory calculations. While borophene catastrophically degrades almost instantaneously upon exposure to air, borophene undergoes considerably more controlled oxidation when exposed to molecular oxygen in UHV. In particular, UHV molecular oxygen dosing results in single-atom covalent modification of the borophene basal plane in addition to disordered borophene edge oxidation that shows altered electronic characteristics. By comparing these experimental observations with density functional theory calculations, further atomistic insight is gained including pathways for molecular oxygen dissociation, surface diffusion, and chemisorption to borophene. Overall, this study provides an atomic-scale perspective of borophene oxidation that will inform ongoing efforts to passivate and utilize borophene in ambient conditions.
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Affiliation(s)
- Xiaolong Liu
- Applied Physics Graduate Program, Northwestern University, Evanston, IL, 60208, United States of America
| | - Matthew S Rahn
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, United States of America
| | - Qiyuan Ruan
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, United States of America
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, United States of America
| | - Mark C Hersam
- Applied Physics Graduate Program, Northwestern University, Evanston, IL, 60208, United States of America
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, United States of America
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, United States of America
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, United States of America
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48
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Kutana A, Altalhi T, Ruan Q, Zhang JJ, Penev ES, Yakobson BI. Stability and electronic properties of gallenene. NANOSCALE ADVANCES 2022; 4:1408-1413. [PMID: 36133675 PMCID: PMC9419834 DOI: 10.1039/d1na00553g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Accepted: 01/15/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional metals offer intriguing possibilities to explore the metallic and other related properties in systems with reduced dimensionality. Here, following recent experimental reports of synthesis of two-dimensional metallic gallium (gallenene) on insulating substrates, we conduct a computational search of gallenene structures using the Particle Swarm Optimization algorithm, and identify stable low energy structures. Our calculations of the critical temperature for conventional superconductivity yield values of ∼7 K for gallenene. We also emulate the presence of the substrate by introducing the external confining potential and test its effect on the structures with unstable phonons.
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Affiliation(s)
- Alex Kutana
- Department of Materials Science and NanoEngineering, Rice University Houston Texas 77005 USA
| | - Tariq Altalhi
- Chemistry Department, Taif University Taif 21974 Saudi Arabia
| | - Qiyuan Ruan
- Department of Materials Science and NanoEngineering, Rice University Houston Texas 77005 USA
| | - Jun-Jie Zhang
- Department of Materials Science and NanoEngineering, Rice University Houston Texas 77005 USA
| | - Evgeni S Penev
- Department of Materials Science and NanoEngineering, Rice University Houston Texas 77005 USA
| | - Boris I Yakobson
- Chemistry Department, Taif University Taif 21974 Saudi Arabia
- Department of Chemistry, Rice University Houston Texas 77005 USA
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Yadav S, Sadique MA, Kaushik A, Ranjan P, Khan R, Srivastava AK. Borophene as an emerging 2D flatland for biomedical applications: current challenges and future prospects. J Mater Chem B 2022; 10:1146-1175. [PMID: 35107476 DOI: 10.1039/d1tb02277f] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Recently, two-dimensional (2D)-borophene has emerged as a remarkable translational nanomaterial substituting its predecessors in the field of biomedical sensors, diagnostic tools, high-performance healthcare devices, super-capacitors, and energy storage devices. Borophene justifies its demand due to high-performance and controlled optical, electrical, mechanical, thermal, and magnetic properties as compared with other 2D-nanomaterials. However, continuous efforts are being made to translate theoretical and experimental knowledge into pragmatic platforms. To cover the associated knowledge gap, this review explores the computational and experimental chemistry needed to optimize borophene with desired properties. High electrical conductivity due to destabilization of the highest occupied molecular orbital (HOMO), nano-engineering at the monolayer level, chemistry-oriented biocompatibility, and photo-induced features project borophene for biosensing, bioimaging, cancer treatment, and theragnostic applications. Besides, the polymorphs of borophene have been useful to develop specific bonding for DNA sequencing and high-performance medical equipment. In this review, an overall critical and careful discussion of systematic advancements in borophene-based futuristic biomedical applications including artificial intelligence (AI), Internet-of-Things (IoT), and Internet-of-Medical Things (IoMT) assisted smart devices in healthcare to develop high-performance biomedical systems along with challenges and prospects is extensively addressed. Consequently, this review will serve as a key supportive platform as it explores borophene for next-generation biomedical applications. Finally, we have proposed the potential use of borophene in healthcare management strategies.
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Affiliation(s)
- Shalu Yadav
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Mohd Abubakar Sadique
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India.
| | - Ajeet Kaushik
- NanoBioTech Laboratory, Health Systems Engineering, Department of Environmental Engineering, Florida Polytechnic University, Lakeland, Florida 33805, USA
| | - Pushpesh Ranjan
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Raju Khan
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Avanish K Srivastava
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
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50
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Bai Z, He D, Fu S, Miao Q, Liu S, Huang M, Zhao K, Wang Y, Zhang X. Recent progress in electron–phonon interaction of two‐dimensional materials. NANO SELECT 2022. [DOI: 10.1002/nano.202100367] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022] Open
Affiliation(s)
- Zhiying Bai
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Shaohua Fu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Qing Miao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Shuangyan Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Mohan Huang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Kun Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China
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