1
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Gong X, Dong R, Wang J, Ma L. Towards the selective growth of two-dimensional ordered C xN y compounds via epitaxial substrate mediation. Sci Bull (Beijing) 2024; 69:2212-2220. [PMID: 38729801 DOI: 10.1016/j.scib.2024.04.057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 01/17/2024] [Accepted: 04/22/2024] [Indexed: 05/12/2024]
Abstract
Two-dimensional (2D) ordered carbon-nitrogen binary compounds (CxNy) show great potential in many fields owing to their diverse structures and outstanding properties. However, the scalable and selective synthesis of 2D CxNy compounds remain a challenge due to the variable C/N stoichiometry induced coexistence of graphitic, pyridinic, and pyrrolic N species and the competitive growth of graphene. Here, this work systematically explored the mechanism of selective growth of a series of 2D ordered CxNy compounds, namely, the g-C3N4, C2N, C3N, and C5N, on various epitaxial substrates via first-principles calculations. By establishing the thermodynamic phase diagram, it is revealed that the individualized surface interaction and symmetry match between 2D CxNy compounds and substrates together enable the selective epitaxial growth of single crystal 2D CxNy compounds within distinct chemical potential windows of feedstock. The kinetics behaviors of the diffusion and attachment of the decomposed feedstock C/N atoms to the growing CxNy clusters further confirmed the feasibility of the substrate mediated selective growth of 2D CxNy compounds. Moreover, the optimal experimental conditions, including the temperature and partial pressure of feedstock, are suggested for the selective growth of targeted 2D CxNy compound on individual epitaxial substrates by carefully considering the chemical potential of carbon/nitrogen as the functional of experimental parameters based on the standard thermochemical tables. This work provides an insightful understanding on the mechanism of selective epitaxial growth of 2D ordered CxNy compounds for guiding the future experimental design.
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Affiliation(s)
- Xiaoshu Gong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Ruikang Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Jinlan Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China; Suzhou Laboratory, Suzhou 215004, China
| | - Liang Ma
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China; Suzhou Laboratory, Suzhou 215004, China.
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2
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Gautam C, Thakurta B, Pal M, Ghosh AK, Giri A. Wafer scale growth of single crystal two-dimensional van der Waals materials. NANOSCALE 2024; 16:5941-5959. [PMID: 38445855 DOI: 10.1039/d3nr06678a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.
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Affiliation(s)
- Chetna Gautam
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Baishali Thakurta
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Monalisa Pal
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Anup Kumar Ghosh
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
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3
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Liu B, Ma S. Precise synthesis of graphene by chemical vapor deposition. NANOSCALE 2024; 16:4407-4433. [PMID: 38291992 DOI: 10.1039/d3nr06041a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.
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Affiliation(s)
- Bing Liu
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
| | - Siguang Ma
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
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4
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Corbet CHWA, van den Bersselaar BWL, de Waal BFM, Reynaerts R, Mali KS, De Feyter S, Jonas AM, Meijer EW, Vantomme G. Self-Assembly of Discrete Oligomers of Naphthalenediimides in Bulk and on Surfaces. Chemistry 2024; 30:e202303107. [PMID: 38009432 DOI: 10.1002/chem.202303107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 11/21/2023] [Accepted: 11/22/2023] [Indexed: 11/28/2023]
Abstract
Here, we report on the synthesis of discrete oligomers of alkyl-bridged naphthalenediimides (NDIs) and study their molecular nanostructures both in bulk, in solution, and at the liquid-solid interface. Via an iterative synthesis method, multiple NDI cores were bridged with short and saturated alkyl-diamines (C3 and C12 ) or long and unsaturated alkyl-diamines (u2 C33 to u8 C100 ) at their imide termini. The strong intermolecular interaction between the NDI cores was observed by probing their photophysical properties in solution. In bulk, the discrete NDI oligomers preferentially ordered in lamellar morphologies, irrespective of whether a saturated or unsaturated spacer was employed. Moreover, both the molecular architecture as well as the crystallization conditions play a significant role in the nanoscale ordering. The long unsaturated alkyl chains lead preferably to folded-chain conformations while their saturated analogues form stretched arrangements. At the solution-solid interface, well-defined lamellar regions were observed. These results show that precision in chemical structure alone is not sufficient to reach well-defined structures of discrete oligomers, but that it must be combined with precision in processing conditions.
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Affiliation(s)
- Christiaan H W A Corbet
- Institute for Complex Molecular Systems and Laboratory of Macromolecular and Organic Chemistry, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Bart W L van den Bersselaar
- Institute for Complex Molecular Systems and Laboratory of Macromolecular and Organic Chemistry, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Bas F M de Waal
- Institute for Complex Molecular Systems and Laboratory of Macromolecular and Organic Chemistry, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Robby Reynaerts
- Division of Molecular Imaging and Photonics, Department of Chemistry, KU Leuven, Celestijnenlaan 200 F, B-3001, Leuven, Belgium
| | - Kunal S Mali
- Division of Molecular Imaging and Photonics, Department of Chemistry, KU Leuven, Celestijnenlaan 200 F, B-3001, Leuven, Belgium
| | - Steven De Feyter
- Division of Molecular Imaging and Photonics, Department of Chemistry, KU Leuven, Celestijnenlaan 200 F, B-3001, Leuven, Belgium
| | - Alain M Jonas
- Institute of Condensed Matter and Nanosciences, Bio- and Soft Matter, Université catholique de Louvain-UCLouvain, Ottignies-Louvain-la-Neuve, Louvain-la-Neuve, B-1348, Belgium
| | - E W Meijer
- Institute for Complex Molecular Systems and Laboratory of Macromolecular and Organic Chemistry, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
- School of Chemistry and RNA Institute, University of New South Wales, Sydney, Australia
| | - Ghislaine Vantomme
- Institute for Complex Molecular Systems and Laboratory of Macromolecular and Organic Chemistry, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
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5
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Liang J, Ma K, Zhao X, Lu G, Riffle J, Andrei CM, Dong C, Furkan T, Rajabpour S, Prabhakar RR, Robinson JA, Magdaleno V, Trinh QT, Ager JW, Salmeron M, Aloni S, Caldwell JD, Hollen S, Bechtel HA, Bassim ND, Sherburne MP, Al Balushi ZY. Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene-Substrate Heterointerfaces. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47649-47660. [PMID: 37782678 PMCID: PMC10571006 DOI: 10.1021/acsami.3c07763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 09/19/2023] [Indexed: 10/04/2023]
Abstract
Intercalation is the process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on the intercalation of metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains challenging. In this work, we present a new mechanism for intercalating large molecules through monolayer graphene to form confined oxide materials at the graphene-substrate heterointerface. We investigate the intercalation of phosphorus pentoxide (P2O5) molecules directly from the vapor phase and confirm the formation of confined P2O5 at the graphene-substrate heterointerface using various techniques. Density functional theory (DFT) corroborates the experimental results and reveals the intercalation mechanism, whereby P2O5 dissociates into small fragments catalyzed by defects in the graphene that then permeates through lattice defects and reacts at the heterointerface to form P2O5. This process can also be used to form new confined metal phosphates (e.g., 2D InPO4). While the focus of this study is on P2O5 intercalation, the possibility of intercalation from predissociated molecules catalyzed by defects in graphene may exist for other types of molecules as well. This in-depth study advances our understanding of intercalation routes of large molecules via the basal plane of graphene as well as heterointerface chemical reactions leading to the formation of distinctive confined complex oxide compounds.
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Affiliation(s)
- Jiayun Liang
- Department
of Materials Science and Engineering, University
of California, Berkeley, Berkeley, California 94720, United States
| | - Ke Ma
- Department
of Materials Science and Engineering, University
of California, Berkeley, Berkeley, California 94720, United States
| | - Xiao Zhao
- Department
of Materials Science and Engineering, University
of California, Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Guanyu Lu
- Department
of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Jake Riffle
- Department
of Physics and Astronomy, University of
New Hampshire, Durham, New Hampshire 03824, United States
| | - Carmen M. Andrei
- Canadian
Centre for Electron Microscopy, McMaster
University, Hamilton ,ON L8S 4L8, Canada
| | - Chengye Dong
- 2D Crystal
Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Turker Furkan
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Siavash Rajabpour
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rajiv Ramanujam Prabhakar
- Chemical
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Joshua A. Robinson
- 2D Crystal
Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Vasquez Magdaleno
- Department
of Mining, Metallurgy, and Materials Engineering, University of the Philippines, Diliman, Quezon City 1101, Philippines
| | - Quang Thang Trinh
- Queensland
Micro- and Nanotechnology Centre, Griffith
University, Brisbane, 4111 Australia
| | - Joel W. Ager
- Department
of Materials Science and Engineering, University
of California, Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Miquel Salmeron
- Department
of Materials Science and Engineering, University
of California, Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Shaul Aloni
- The Molecular Foundry, Lawrence
Berkeley
National Laboratory, Berkeley, California 94720, United States
| | - Joshua D. Caldwell
- Department
of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Shawna Hollen
- Department
of Physics and Astronomy, University of
New Hampshire, Durham, New Hampshire 03824, United States
| | - Hans A. Bechtel
- Advanced
Light Source, Lawrence Berkeley
National Laboratory, Berkeley, California 94720, United States
| | - Nabil D. Bassim
- Canadian
Centre for Electron Microscopy, McMaster
University, Hamilton ,ON L8S 4L8, Canada
- Department of
Materials Science and Engineering, McMaster
University, Hamilton ,ON L8S 4L8, Canada
| | - Matthew P. Sherburne
- Department
of Materials Science and Engineering, University
of California, Berkeley, Berkeley, California 94720, United States
| | - Zakaria Y. Al Balushi
- Department
of Materials Science and Engineering, University
of California, Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
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6
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Akhtar F, Dabrowski J, Lukose R, Wenger C, Lukosius M. Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001). ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37479219 PMCID: PMC10401564 DOI: 10.1021/acsami.3c05860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2023]
Abstract
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm-1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm2/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction.
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Affiliation(s)
- Fatima Akhtar
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Jaroslaw Dabrowski
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Rasuole Lukose
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Christian Wenger
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- BTU Cottbus Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
| | - Mindaugas Lukosius
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
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7
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Pan S, Hong M, Zhu L, Quan W, Zhang Z, Huan Y, Yang P, Cui F, Zhou F, Hu J, Zheng F, Zhang Y. On-Site Synthesis and Characterizations of Atomically-Thin Nickel Tellurides with Versatile Stoichiometric Phases through Self-Intercalation. ACS NANO 2022; 16:11444-11454. [PMID: 35786839 DOI: 10.1021/acsnano.2c05570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe2, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe2 and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe2 to self-intercalated Ni3Te4 and Ni5Te6. The synthesis of Ni self-intercalated NixTey compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe2 intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.
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Affiliation(s)
- Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Min Hong
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wenzhi Quan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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8
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Dumiszewska E, Ciepielewski P, Caban PA, Jóźwik I, Gaca J, Baranowski JM. Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor. Molecules 2022; 27:molecules27113636. [PMID: 35684572 PMCID: PMC9181917 DOI: 10.3390/molecules27113636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 05/31/2022] [Accepted: 06/02/2022] [Indexed: 12/10/2022] Open
Abstract
The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penetration of water vapor through graphene defects on Gr/Ge(001)/Si(001) samples leads to the oxidation of germanium, forming GeO2. The presence of trigonal GeO2 under graphene was identified by Raman and XRD measurements. The oxidation of Ge leads to the formation of blisters under the graphene layer. It is suggested that oxidation of Ge is connected with the dissociation of water molecules and penetration of OH molecules or O to the Ge surface. It has also been found that the formation of blisters of GeO2 leads to a dramatic increase in the intensity of the graphene Raman spectrum. The increase in the Raman signal intensity is most likely due to the screening of graphene by GeO2 from the Ge(001) surface.
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9
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Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge. Nat Commun 2022; 13:2990. [PMID: 35637222 PMCID: PMC9151678 DOI: 10.1038/s41467-022-30724-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 05/12/2022] [Indexed: 11/08/2022] Open
Abstract
The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides. The integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO3-δ membrane with enhanced flexoelectricity on Ge (011).
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10
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Wan Y, Fu JH, Chuu CP, Tung V, Shi Y, Li LJ. Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth. Chem Soc Rev 2022; 51:803-811. [PMID: 35014665 DOI: 10.1039/d1cs00264c] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) layered materials hold tremendous promise for post-Si nanoelectronics due to their unique optical and electrical properties. Significant advances have been achieved in device fabrication and synthesis routes for 2D nanoelectronics over the past decade; however, one major bottleneck preventing their immediate applications has been the lack of a reproducible approach for growing wafer-scale single-crystal films despite tremendous progress in recent experimental demonstrations. In this tutorial review, we provide a systematic summary of the critical factors-including crystal/substrate symmetry and energy consideration-necessary for synthesizing single-orientation 2D layers. In particular, we focus on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2D layers.
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Affiliation(s)
- Yi Wan
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China. .,Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road, Hong Kong.
| | - Jui-Han Fu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
| | - Chih-Piao Chuu
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), 168 Park Ave. 2, Hsinchu Science Park, Hsinchu 30075, Taiwan
| | - Vincent Tung
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
| | - Yumeng Shi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China. .,Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road, Hong Kong.
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11
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Jiang B, Wang S, Sun J, Liu Z. Controllable Synthesis of Wafer-Scale Graphene Films: Challenges, Status, and Perspectives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2008017. [PMID: 34106524 DOI: 10.1002/smll.202008017] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 02/22/2021] [Indexed: 06/12/2023]
Abstract
The availability of high-quality, large-scale, and single-crystal wafer-scale graphene films is fundamental for key device applications in the field of electronics, optics, and sensors. Synthesis determines the future: unleashing the full potentials of such emerging materials relies heavily upon their tailored synthesis in a scalable fashion, which is by no means an easy task to date. This review covers the state-of-the-art progress in the synthesis of wafer-scale graphene films by virtue of chemical vapor deposition (CVD), with a focus on main challenges and present status. Particularly, prevailing synthetic strategies are highlighted on a basis of the discussion in the reaction kinetics and gas-phase dynamics during CVD process. Perspectives with respect to key opportunities and promising research directions are proposed to guide the future development of wafer-scale graphene films.
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Affiliation(s)
- Bei Jiang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
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12
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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13
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Kim N, Choi S, Yang SJ, Park J, Park JH, Nguyen NN, Park K, Ryu S, Cho K, Kim CJ. Graphene Nanoribbon Grids of Sub-10 nm Widths with High Electrical Connectivity. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28593-28599. [PMID: 34101416 DOI: 10.1021/acsami.1c03437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Quasi-one-dimensional (1D) graphene nanoribbons (GNRs) have finite band gaps and active edge states and therefore can be useful for advanced chemical and electronic devices. Here, we present the formation of GNR grids via seed-assisted chemical vapor deposition on Ge(100) substrates. Nucleation seeds, provided by unzipped C60, initiated growth of the GNRs. The GNRs grew toward two orthogonal directions in an anisotropic manner, templated by the single crystalline substrate, thereby forming grids that had lateral stitching over centimeter scales. The spatially uniform grid can be transferred and patterned for batch fabrication of devices. The GNR grids showed percolative conduction with a high electrical sheet conductance of ∼2 μS·sq and field-effect mobility of ∼5 cm2/(V·s) in the macroscopic channels, which confirm excellent lateral stitching between domains. From transconductance measurements, the intrinsic band gap of GNRs with sub-10 nm widths was estimated as ∼80 meV, similar to theoretical expectation. Our method presents a scalable way to fabricate atomically thin elements with 1D characteristics for integration with various nanodevices.
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Affiliation(s)
- Namjo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Shinyoung Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Seong-Jun Yang
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Jewook Park
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Jun-Ho Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Nguyen Ngan Nguyen
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Kwanghee Park
- Department of Chemistry, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Sunmin Ryu
- Department of Chemistry, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
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14
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Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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15
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Huang M, Deng B, Dong F, Zhang L, Zhang Z, Chen P. Substrate Engineering for CVD Growth of Single Crystal Graphene. SMALL METHODS 2021; 5:e2001213. [PMID: 34928093 DOI: 10.1002/smtd.202001213] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2020] [Revised: 01/13/2021] [Indexed: 06/14/2023]
Abstract
Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.
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Affiliation(s)
- Ming Huang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Bangwei Deng
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Fan Dong
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Lili Zhang
- Institute of Chemical and Engineering Sciences, A*STAR, 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
| | - Zheye Zhang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Peng Chen
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
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16
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Pan S, Yang P, Zhu L, Hong M, Xie C, Zhou F, Shi Y, Huan Y, Cui F, Zhang Y. Effect of substrate symmetry on the orientations of MoS 2 monolayers. NANOTECHNOLOGY 2021; 32:095601. [PMID: 33113522 DOI: 10.1088/1361-6528/abc566] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are promising platforms for developing next-generation electronic and optoelectronic devices due to their unique properties. To achieve this, the growth of large single-crystal TMDs is a critical issue. Unraveling the factors affecting the nucleation and domain orientation should hold fundamental significance. Herein, we design the chemical vapor deposition growth of monolayer MoS2 triangles on Au(111) and Au(100) facets, for exploring the substrate facet effects on the domain orientations. According to multi-scale characterizations, we find that, the obtained triangular MoS2 domains present two preferential orientations on the six-fold symmetric Au(111) facet, whereas four predominant orientations on the four-fold symmetric Au(100) facet. Using on-site scanning tunneling microscopy, we further reveal the preferred alignments of monolayer MoS2 triangles along the close-packed directions of both Au(111) and Au(100) facets. Moreover, bunched substrate steps are also found to form along the close-packed directions of the crystal facets, which guides the preferential nucleation of monolayer MoS2 along the step edges. This work should hereby deepen the understanding of the substrate facet/step effect on the nucleation and orientation of monolayer MoS2 domains, thus providing fundamental insights into the controllable syntheses of large single-crystal TMD monolayers.
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Affiliation(s)
- Shuangyuan Pan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Lijie Zhu
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Yuping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fangfang Cui
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
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17
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Galbiati M, Persichetti L, Gori P, Pulci O, Bianchi M, Di Gaspare L, Tersoff J, Coletti C, Hofmann P, De Seta M, Camilli L. Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction. J Phys Chem Lett 2021; 12:1262-1267. [PMID: 33497236 DOI: 10.1021/acs.jpclett.0c03649] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first-principle calculations, we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution toward the integration of graphene with conventional semiconductors.
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Affiliation(s)
- Miriam Galbiati
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | | | - Paola Gori
- Department of Engineering, Roma Tre University, 00146 Rome, Italy
| | - Olivia Pulci
- Department of Physics, University of Rome "Tor Vergata", 00133 Rome, Italy
- Istituto Nazionale di Fisica Nucleare, Roma 2, 00133 Rome, Italy
| | - Marco Bianchi
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | | | - Jerry Tersoff
- IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York, New York 10598, United States
| | - Camilla Coletti
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Pisa 56127, Italy
- Graphene Laboratories, Istituto Italiano di Tecnologia, Genova 16163, Italy
| | - Philip Hofmann
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Monica De Seta
- Department of Sciences, Roma Tre University, 00146 Rome, Italy
| | - Luca Camilli
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, University of Rome "Tor Vergata", 00133 Rome, Italy
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18
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Ta HQ, Bachmatiuk A, Mendes RG, Perello DJ, Zhao L, Trzebicka B, Gemming T, Rotkin SV, Rümmeli MH. Large-Area Single-Crystal Graphene via Self-Organization at the Macroscale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002755. [PMID: 32965054 DOI: 10.1002/adma.202002755] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2020] [Revised: 07/11/2020] [Indexed: 06/11/2023]
Abstract
In 1665 Christiaan Huygens first noticed how two pendulums, regardless of their initial state, would synchronize. It is now known that the universe is full of complex self-organizing systems, from neural networks to correlated materials. Here, graphene flakes, nucleated over a polycrystalline graphene film, synchronize during growth so as to ultimately yield a common crystal orientation at the macroscale. Strain and diffusion gradients are argued as the probable causes for the long-range cross-talk between flakes and the formation of a single-grain graphene layer. The work demonstrates that graphene synthesis can be advanced to control the nucleated crystal shape, registry, and relative alignment between graphene crystals for large area, that is, a single-crystal bilayer, and (AB-stacked) few-layer graphene can been grown at the wafer scale.
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Affiliation(s)
- Huy Quang Ta
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - Alicja Bachmatiuk
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
- Polish Center for Technology Development (PORT), Ul. Stabłowicka 147, Wrocław, 54-066, Poland
| | - Rafael Gregorio Mendes
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - David J Perello
- School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Booth St. E, Manchester, M13 9PL, UK
| | - Liang Zhao
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Barbara Trzebicka
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - Slava V Rotkin
- Department of Engineering Science and Mechanics, Materials Research Institute, The Pennsylvania State University, Millennium Science Complex, University Park, PA, 16802, USA
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
- Institute of Environmental Technology, VSB-Technical University of Ostrava, 17. Listopadu 15, Ostrava, 708 33, Czech Republic
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19
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Chen W, Wang X, Li S, Yan C, He L, Zhang P, Yang Y, Ma D, Nie J, Dou R. Robust atomic-structure of the 6 × 2 reconstruction surface of Ge(110) protected by the electronically transparent graphene monolayer. Phys Chem Chem Phys 2020; 22:22711-22718. [PMID: 33016301 DOI: 10.1039/d0cp03322g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Wafer-scale growth of the unidirectional graphene monolayer on Ge surfaces has rejuvenated the intense study of the surfaces and interfaces of semiconductors underneath graphene. Recently, it was reported that the Ge atoms in the Ge(110) surface beneath a graphene monolayer underwent a rearrangement and formed an ordered (6 × 2) reconstruction. However, a plausible atomic model related to this (6 × 2) reconstruction is still lacking. Here, by using scanning tunnelling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations, we deeply investigated the structural and electronic properties of the Ge(110) (6 × 2) surface encapsulated by a graphene monolayer. The (6 × 2) surface reconstruction was confirmed for the post-annealing-graphene-covered Ge(110) surface via STM, and was found to be quite air-stable, owing to the protection of the graphene monolayer against surface oxidation. Our study disclosed that the topographic features of the topmost graphene monolayer and the Ge(110) surface could be selectively imaged by utilizing suitable scanning biases. According to the STM results and DFT calculations, a rational ball-and-stick model of the (6 × 2) reconstruction was successfully provided, in which an elemental building block comprising two Ge triangles and two isolated Ge atoms adsorbed on the unreconstructed ideal Ge(110) surface. Local density of states of the graphene/Ge surface was explored via scanning tunneling spectroscopy (STS), presenting four well-defined differential conductance (dI/dV) peaks, protruding at energies of 0.2, 0.4, 0.6 and 0.8 eV, respectively. The four peaks predominantly originated from the surface states of the reconstructing adatoms and were well reproduced by our theoretical simulation. This result means that the Ge surface is very robust after being encapsulated by the epitaxial graphene, which could be advantageous for directly fabricating graphene/Ge-hybrid high-speed electronics and optoelectronics based on conventional microelectronics technology.
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Affiliation(s)
- Wenjing Chen
- Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China.
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20
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Han X, Wu Y, Xiao H, Zhang M, Gao M, Liu Y, Wang J, Hu T, Xie X, Di Z. Disorder-Induced Quantum Griffiths Singularity Revealed in an Artificial 2D Superconducting System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902849. [PMID: 33101841 PMCID: PMC7578859 DOI: 10.1002/advs.201902849] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2019] [Revised: 07/26/2020] [Indexed: 06/02/2023]
Abstract
Disorder-induced Griffiths singularity of quantum phase transition (QPT) is a crucial issue in 2D superconductors (2DSC). In a superconducting system, the strength of disorder is found to be associated with the vortex pinning energy, which is closely related to the quantum Griffiths singularity; however, a direct study to elucidate the role of vortex pinning energy on the quantum Griffiths singularity in 2DSC remains to be undertaken. Here, an artificial 2DSC system is designed by randomly depositing superconducting nanoislands on 2Delectron gas (2DEG). Quantum Griffiths singularity is present in a graphene/Pb-islands-array hybrid, where the superconducting behavior transits to weakly localized metallic behavior induced by the vertical magnetic field and exhibits critical behavior with a diverging dynamical critical exponent approaching zero temperature. Compared to the study of graphene/Sn-islands-array hybrid where the sharp QPT is observed, the vortex pinning energy acquired from the Arrhenius plot analysis is greater in graphene/Pb-islands-array hybrid, which may contribute to the presence of the quantum Griffiths singularity. This work may provide a comprehensive interpretation of the QPT in 2DSC.
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Affiliation(s)
- Xiaowen Han
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Yufeng Wu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050China
| | - Hong Xiao
- Center for High Pressure Science and Technology Advanced ResearchBeijing100094China
| | - Miao Zhang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China
| | - Min Gao
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Yi Liu
- International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
- Collaborative Innovation Center of Quantum MatterBeijing100871China
| | - Jian Wang
- International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
- Collaborative Innovation Center of Quantum MatterBeijing100871China
- CAS Center for Excellence in Topological Quantum ComputationUniversity of Chinese Academy of SciencesBeijing100190China
- Beijing Academy of Quantum Information SciencesWest Bld. #3, No. 10 Xibeiwang East Rd., Haidian DistrictBeijing100193China
| | - Tao Hu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050China
- Beijing Academy of Quantum Information SciencesWest Bld. #3, No. 10 Xibeiwang East Rd., Haidian DistrictBeijing100193China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China
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21
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Abstract
Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.
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Affiliation(s)
- Wenqian Yao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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22
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Bekdüz B, Kaya U, Langer M, Mertin W, Bacher G. Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD. Sci Rep 2020; 10:12938. [PMID: 32737382 PMCID: PMC7395096 DOI: 10.1038/s41598-020-69846-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2020] [Accepted: 07/14/2020] [Indexed: 11/12/2022] Open
Abstract
The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.
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Affiliation(s)
- Bilge Bekdüz
- Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, 47057, Duisburg, Germany
| | - Umut Kaya
- Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, 47057, Duisburg, Germany
| | - Moritz Langer
- Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, 47057, Duisburg, Germany
| | - Wolfgang Mertin
- Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, 47057, Duisburg, Germany.
| | - Gerd Bacher
- Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, 47057, Duisburg, Germany
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23
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Dedkov Y, Voloshina E. Epitaxial graphene/Ge interfaces: a minireview. NANOSCALE 2020; 12:11416-11426. [PMID: 32458957 DOI: 10.1039/d0nr00185f] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The recent discovery of the ability to perform direct epitaxial growth of graphene layers on semiconductor Ge surfaces led to a huge interest in this topic. One of the reasons for this interest is the chance to overcome several present-day drawbacks on the method of graphene integration in modern semiconductor technology. The other one is connected with the fundamental studies of the new graphene-semiconductor interfaces that might help with the deeper understanding of mechanisms, which governs graphene growth on different substrates as well as shedding light on the interaction of graphene with these substrates, whose range is now spread from metals to insulators. The present minireview gives a timely overview of the state-of-the-art field of studies of the graphene-Ge epitaxial interfaces and draws some conclusions in this research area.
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Affiliation(s)
- Yuriy Dedkov
- Department of Physics, Shanghai University, 200444 Shanghai, P. R. China. and Institute of Physical and Organic Chemistry, Southern Federal University, 344090 Rostov on Don, Russia
| | - Elena Voloshina
- Department of Physics, Shanghai University, 200444 Shanghai, P. R. China. and Institute of Physical and Organic Chemistry, Southern Federal University, 344090 Rostov on Don, Russia
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24
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Hu X, Gong X, Zhang M, Lu H, Xue Z, Mei Y, Chu PK, An Z, Di Z. Enhanced Peltier Effect in Wrinkled Graphene Constriction by Nano-Bubble Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1907170. [PMID: 32105406 DOI: 10.1002/smll.201907170] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2019] [Revised: 01/19/2020] [Indexed: 06/10/2023]
Abstract
Inspired by the promising applications in thermopower generation from waste heat and active on-chip cooling, the thermoelectric and electrothermal properties of graphene have been extensively pursued by seeking ingeniously designed structures with thermoelectric conversion capability. The graphene wrinkle is a ubiquitous structure formed inevitably during the synthesis of large-scale graphene films but the corresponding properties for thermoelectric and electrothermal applications are rarely investigated. Here, the electrothermal Peltier effect from the graphene wrinkle fabricated on a germanium substrate is reported. Peltier cooling and heating across the wrinkle are visualized unambiguously with polarities consistent with p-type doping and in accordance with the wrinkle spatial distribution. By direct patterning of the nano-bubble structure, the current density across the wrinkle can be boosted by current crowding to enhance the Peltier effect. The observed Peltier effect can be attributed to the nonequilibrium charge transport by interlayer tunneling across the van der Waals barrier of the graphene wrinkle. The graphene wrinkle in combination with nano-bubble engineering constitutes an innovative and agile platform to design graphene and other more general two-dimensional (2D) thermoelectrics and opens the possibility for realizing active on-chip cooling for 2D nanoelectronics with van der Waals junctions.
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Affiliation(s)
- Xudong Hu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xue Gong
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Key Laboratory of Micro and Nano Photonics Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Miao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Huihui Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yongfeng Mei
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Zhenghua An
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Key Laboratory of Micro and Nano Photonics Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
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25
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Zhao M, Xue Z, Zhu W, Wang G, Tang S, Liu Z, Guo Q, Chen D, Chu PK, Ding G, Di Z. Interface Engineering-Assisted 3D-Graphene/Germanium Heterojunction for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15606-15614. [PMID: 32157866 DOI: 10.1021/acsami.0c02485] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Three-dimensional graphene (3D-Gr) with excellent light absorption properties has received enormous interest, but in conventional processes to prepare 3D-Gr, amorphous carbon layers are inevitably introduced as buffer layers that may degrade the performance of graphene-based devices. Herein, 3D-Gr is prepared on germanium (Ge) using two-dimensional graphene (2D-Gr) as the buffer layer. 2D-Gr as the buffer layer facilitates the in situ synthesis of 3D-Gr on Ge by plasma-enhanced chemical vapor deposition (PECVD) by promoting 2D-Gr nucleation and reducing the barrier height. The growth mechanism is investigated and described. The enhanced light absorption as confirmed by theoretical calculation and 3D-Gr/2D-Gr/Ge with a Schottky junction improves the performance of optoelectronic devices without requiring pre- and post-transfer processes. The photodetector constructed with 3D-Gr/2D-Gr/Ge shows an excellent responsivity of 1.7 A W-1 and detectivity 3.42 × 1014 cm Hz1/2 W-1 at a wavelength of 1550 nm. This novel hybrid structure that incorporates 3D- and 2D-Gr into Ge-based integrated circuits and photodetectors delivers excellent performance and has large commercial potential.
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Affiliation(s)
- Menghan Zhao
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Wei Zhu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Gang Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Shiwei Tang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Zhiduo Liu
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Qinglei Guo
- Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, P. R. China
| | - Da Chen
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China
| | - Guqiao Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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26
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Li N, Zhang K, Xie K, Wei W, Gao Y, Bai M, Gao Y, Hou Q, Shen C, Xia Z, Wei B. Reduced-Graphene-Oxide-Guided Directional Growth of Planar Lithium Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907079. [PMID: 31867806 DOI: 10.1002/adma.201907079] [Citation(s) in RCA: 40] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2019] [Revised: 11/30/2019] [Indexed: 05/19/2023]
Abstract
Rechargeable lithium (Li) metal batteries hold great promise for revolutionizing current energy-storage technologies. However, the uncontrollable growth of lithium dendrites impedes the service of Li anodes in high energy and safety batteries. There are numerous studies on Li anodes, yet little attention has been paid to the intrinsic electrocrystallization characteristics of Li metal and their underlying mechanisms. Herein, a guided growth of planar Li layers, instead of random Li dendrites, is achieved on self-assembled reduced graphene oxide (rGO). In situ optical observation is performed to monitor the morphology evolution of such a planar Li layer. Moreover, the underlying mechanism during electrodeposition/stripping is revealed using ab initio molecular dynamics simulations. The combined experiment and simulation results show that when Li atoms are deposited on rGO, each layer of Li atoms grows along (110) crystallographic plane of the Li crystals because of the fine in-plane lattice matching between Li and the rGO substrate, resulting in planar Li deposition. With this specific topographic characteristic, a highly flexible lithium-sulfur (Li-S) full cell with rGO-guided planar Li layers as the anode exhibits stable cycling performance and high specific energy and power densities. This work enriches the fundamental understanding of Li electrocrystallization without dendrites and provides guidance for practical applications.
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Affiliation(s)
- Nan Li
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Kun Zhang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Keyu Xie
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Wenfei Wei
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Yong Gao
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Maohui Bai
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Yuliang Gao
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Qian Hou
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Chao Shen
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Zhenhai Xia
- Department of Materials Science and Engineering, Department of Chemistry, University of North Texas, Denton, TX, 76203, USA
| | - Bingqing Wei
- Department of Mechanical Engineering, University of Delaware, Newark, DE, 19716, USA
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Zhang J, Lin L, Jia K, Sun L, Peng H, Liu Z. Controlled Growth of Single-Crystal Graphene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903266. [PMID: 31583792 DOI: 10.1002/adma.201903266] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2019] [Revised: 07/23/2019] [Indexed: 06/10/2023]
Abstract
Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.
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Affiliation(s)
- Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
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28
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Lee JH, Kang SG, Jang HS, Moon JY, Whang D. Graphene on Group-IV Elementary Semiconductors: The Direct Growth Approach and Its Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803469. [PMID: 30734378 DOI: 10.1002/adma.201803469] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2018] [Revised: 11/17/2018] [Indexed: 06/09/2023]
Abstract
Since the first development of large-area graphene synthesis by the chemical vapor deposition (CVD) method in 2009, CVD-graphene has been considered to be a key material in the future electronics, energy, and display industries, which require transparent, flexible, and stretchable characteristics. Although many graphene-based prototype applications have been demonstrated, several important issues must be addressed in order for them to be compatible with current complementary metal-oxide-semiconductor (CMOS)-based manufacturing processes. In particular, metal contamination and mechanical damage, caused by the metal catalyst for graphene growth, are known to cause severe and irreversible deterioration in the performance of devices. The most effective way to solve the problems is to grow the graphene directly on the semiconductor substrate. Herein, recent advances in the direct growth of graphene on group-IV semiconductors are reviewed, focusing mainly on the growth mechanism and initial growth behavior when graphene is synthesized on Si and Ge. Furthermore, recent progress in the device applications of graphene with Si and Ge are presented. Finally, perspectives for future research in graphene with a semiconductor are discussed.
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Affiliation(s)
- Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Gyeonggi-do, 16499, South Korea
| | - Seog-Gyun Kang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
| | - Hyeon-Sik Jang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
| | - Ji-Yun Moon
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Gyeonggi-do, 16499, South Korea
| | - Dongmok Whang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
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29
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Niu T, Zhou W, Zhou D, Hu X, Zhang S, Zhang K, Zhou M, Fuchs H, Zeng H. Modulating Epitaxial Atomic Structure of Antimonene through Interface Design. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902606. [PMID: 31157463 DOI: 10.1002/adma.201902606] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2019] [Indexed: 06/09/2023]
Abstract
Antimonene, a new semiconductor with fundamental bandgap and desirable stability, has been experimentally realized recently. However, epitaxial growth of wafer-scale single-crystalline monolayer antimonene preserving its buckled configuration remains a daunting challenge. Here, Cu(111) and Cu(110) are chosen as the substrates to fabricate high-quality, single-crystalline antimonene via molecular beam epitaxy (MBE). Surface alloys form spontaneously after the deposition and postannealing of Sb on two substrates that show threefold and twofold symmetry with different lattice constants. Increasing the coverage leads to the epitaxial growth of two atomic types of antimonene, both exhibiting a hexagonal lattice but with significant difference in lattice constants, which are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements reveal the strain-induced tunable bandgap, in agreement with the first-principles calculations. The results show that epitaxial growth of antimonene on different substrates allow the electronic properties of these films to be tuned by substrate-induced strain and stress.
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Affiliation(s)
- Tianchao Niu
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Wenhan Zhou
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dechun Zhou
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Xuemin Hu
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Shengli Zhang
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Kan Zhang
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing, 100191, China
| | - Harald Fuchs
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
- Center for Nanotechnology (CeNTech), Westfälische Wilhelms-Universität Münster, Heisenbergstrasse 11, 48149, Münster, Germany
| | - Haibo Zeng
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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30
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Dong J, Geng D, Liu F, Ding F. Formation of Twinned Graphene Polycrystals. Angew Chem Int Ed Engl 2019; 58:7723-7727. [DOI: 10.1002/anie.201902441] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Revised: 03/20/2019] [Indexed: 11/05/2022]
Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
| | - Dechao Geng
- Pillar of Engineering Product DevelopmentSingapore University of Technology and Design Singapore 487372 Singapore
| | - Fengning Liu
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
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31
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Wang L, Tian Z, Zhang B, Xu B, Wang T, Wang Y, Li S, Di Z, Mei Y. On-Chip Rolling Design for Controllable Strain Engineering and Enhanced Photon-Phonon Interaction in Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1805477. [PMID: 31026126 DOI: 10.1002/smll.201805477] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2018] [Revised: 04/13/2019] [Indexed: 05/06/2023]
Abstract
On-chip strain engineering is highly demanded in 2D materials as an effective route for tuning their extraordinary properties and integrating consistent functionalities toward various applications. Herein, rolling technique is proposed for strain engineering in monolayer graphene grown on a germanium substrate, where compressive or tensile strain could be acquired, depending on the designed layer stressors. Unusual compressive strains up to 0.30% are achieved in the rolled-up graphene tubular structures. The subsequent phonon hardening under compressive loading is observed through strain-induced Raman G band splitting, while distinct blueshifts of characteristic peaks (G+ , G- , or 2D) can be well regulated on an asymmetric tubular structure with a strain variation. In addition, due to the strong confinement of the local electromagnetic field under 3D tubular geometry, the photon-phonon interaction is highly strengthened, and thus, the Raman scattering of graphene in rolled-up tubes is enhanced. Such an on-chip rolling approach leads to a superior strain tuning method in 2D materials and could improve their light-matter interaction in a tubular configuration, which may hold great capability in 2D materials integration for on-chip applications such as in mechanics, electronics, and photonics.
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Affiliation(s)
- Lu Wang
- Department of Materials Science and State Key Laboratory of ASIC and System, Fudan University, Shanghai, 200433, P. R. China
| | - Ziao Tian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Biran Zhang
- Department of Materials Science and State Key Laboratory of ASIC and System, Fudan University, Shanghai, 200433, P. R. China
| | - Borui Xu
- Department of Materials Science and State Key Laboratory of ASIC and System, Fudan University, Shanghai, 200433, P. R. China
| | - Tianbo Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Yang Wang
- Department of Materials Science and State Key Laboratory of ASIC and System, Fudan University, Shanghai, 200433, P. R. China
| | - Shilong Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - YongFeng Mei
- Department of Materials Science and State Key Laboratory of ASIC and System, Fudan University, Shanghai, 200433, P. R. China
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32
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Deng B, Xin Z, Xue R, Zhang S, Xu X, Gao J, Tang J, Qi Y, Wang Y, Zhao Y, Sun L, Wang H, Liu K, Rummeli MH, Weng LT, Luo Z, Tong L, Zhang X, Xie C, Liu Z, Peng H. Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays. Sci Bull (Beijing) 2019; 64:659-668. [PMID: 36659648 DOI: 10.1016/j.scib.2019.04.030] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2019] [Revised: 04/20/2019] [Accepted: 04/22/2019] [Indexed: 01/21/2023]
Abstract
The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on single-crystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel (Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the CuNi alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition (CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays (LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for high-performance electronics and optoelectronics that are compatible with wafer process.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Zhaowei Xin
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Ruiwen Xue
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Shishu Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xiaozhi Xu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jing Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Yue Qi
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yan Zhao
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Luzhao Sun
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huihui Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Mark H Rummeli
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, China; Centre of Polymer and Carbon Materials, Polish Academy of Sciences, Zabrze 41-819, Poland
| | - Lu-Tao Weng
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Lianming Tong
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xinyu Zhang
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Changsheng Xie
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
| | - Dechao Geng
- Pillar of Engineering Product DevelopmentSingapore University of Technology and Design Singapore 487372 Singapore
| | - Fengning Liu
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
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Jacobberger RM, Murray EA, Fortin-Deschênes M, Göltl F, Behn WA, Krebs ZJ, Levesque PL, Savage DE, Smoot C, Lagally MG, Desjardins P, Martel R, Brar V, Moutanabbir O, Mavrikakis M, Arnold MS. Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). NANOSCALE 2019; 11:4864-4875. [PMID: 30821309 DOI: 10.1039/c9nr00713j] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Chemical vapor deposition of CH4 on Ge(001) can enable anisotropic growth of narrow, semiconducting graphene nanoribbons with predominately smooth armchair edges and high-performance charge transport properties. However, such nanoribbons are not aligned in one direction but instead grow perpendicularly, which is not optimal for integration into high-performance electronics. Here, it is demonstrated that vicinal Ge(001) substrates can be used to synthesize armchair nanoribbons, of which ∼90% are aligned within ±1.5° perpendicular to the miscut. When the growth rate is slow, graphene crystals evolve as nanoribbons. However, as the growth rate increases, the uphill and downhill crystal edges evolve asymmetrically. This asymmetry is consistent with stronger binding between the downhill edge and the Ge surface, for example due to different edge termination as shown by density functional theory calculations. By tailoring growth rate and time, nanoribbons with sub-10 nm widths that exhibit excellent charge transport characteristics, including simultaneous high on-state conductance of 8.0 μS and a high on/off conductance ratio of 570 in field-effect transistors, are achieved. Large-area alignment of semiconducting ribbons with promising charge transport properties is an important step towards understanding the anisotropic nanoribbon growth and integrating these materials into scalable, future semiconductor technologies.
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Affiliation(s)
- Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
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35
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Current Review on Synthesis, Composites and Multifunctional Properties of Graphene. Top Curr Chem (Cham) 2019; 377:10. [DOI: 10.1007/s41061-019-0235-6] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2018] [Accepted: 02/22/2019] [Indexed: 12/30/2022]
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36
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Dong J, Zhang L, Ding F. Kinetics of Graphene and 2D Materials Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1801583. [PMID: 30318816 DOI: 10.1002/adma.201801583] [Citation(s) in RCA: 45] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2018] [Revised: 07/06/2018] [Indexed: 06/08/2023]
Abstract
During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Leining Zhang
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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37
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Hu KM, Xue ZY, Liu YQ, Long H, Peng B, Yan H, Di ZF, Wang X, Lin L, Zhang WM. Tension-Induced Raman Enhancement of Graphene Membranes in the Stretched State. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1804337. [PMID: 30506848 DOI: 10.1002/smll.201804337] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2018] [Revised: 11/14/2018] [Indexed: 06/09/2023]
Abstract
The intensity ratio of the 2D band to the G band, I2D /IG , is a good criterion in selecting high quality monolayer graphene samples; however, the evaluation of the ultimate value of I2D /IG for intrinsic monolayer graphene is a challenging yet interesting issue. Here, an interesting tension-induced Raman enhancement phenomenon is reported in supported graphene membranes, which show a transition from the corrugated state to the stretched state in the vicinity of wells. The I2D /IG of substrate-supported graphene membranes near wells are significantly enhanced up to 16.74, which is the highest experimental value to the best of knowledge, increasing by more than 600% when the testing points approach the well edges.The macroscopic origin of this phenomenon is that corrugated graphene membranes are stretched by built-in tensions. A lattice dynamic model is proposed to successfully reveal the microscopic mechanism of this phenomenon. The theoretical results agree well with the experimental data, demonstrating that tensile stresses can depress the amplitude of in-plane vibration of sp2 -bonded carbon atoms and result in the decrease in the G band intensity. This work can be helpful in furthering the development of the method of suppressing small ripples in graphene and acquiring ultraflat 2D materials.
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Affiliation(s)
- Kai-Ming Hu
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhong-Ying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Yun-Qi Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Hu Long
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Bo Peng
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Han Yan
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zeng-Feng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Xi Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Liwei Lin
- Berkeley Sensor and Actuator Center, University of California at Berkeley, 5101-B Etcheverry, Berkeley, CA, 94720-1774, USA
| | - Wen-Ming Zhang
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
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38
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Kim HW, Ko W, Joo WJ, Cho Y, Oh Y, Ku J, Jeon I, Park S, Hwang SW. Unraveling the Structural and Electronic Properties of Graphene/Ge(110). J Phys Chem Lett 2018; 9:7059-7063. [PMID: 30509074 DOI: 10.1021/acs.jpclett.8b03315] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The direct growth of graphene on a semiconducting substrate opens a new avenue for future graphene-based applications. Understanding the structural and electronic properties of the graphene on a semiconducting surface is key for realizing such structures; however, these properties are poorly understood thus far. Here, we provide insight into the structural and electronic properties of graphene grown directly on a Ge(110) substrate. Our scanning tunneling microscopy (STM) study reveals that overlaying graphene on Ge(110) promotes the formation of a new Ge surface reconstruction, i.e., a (6 × 2) superstructure, which has been never observed for a bare Ge(110) surface. The electronic properties of the system exhibit the characteristics of both graphene and Ge. The differential conductance (d I/d V) spectrum from a scanning tunneling spectroscopy (STS) study bears a parabolic structure, corresponding to a reduction in the graphene Fermi velocity, exhibiting additional peaks stemming from the p-orbitals of Ge. The density functional theory (DFT) calculations confirm the existence of surface states due to the p-orbitals of Ge.
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Affiliation(s)
- Hyo Won Kim
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - Wonhee Ko
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - Won-Jae Joo
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - Yeonchoo Cho
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - Youngtek Oh
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - JiYeon Ku
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - Insu Jeon
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - Seongjung Park
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
| | - Sung Woo Hwang
- Samsung Advanced Institute of Technology , Suwon 16678 , Korea
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Khan A, Islam SM, Ahmed S, Kumar RR, Habib MR, Huang K, Hu M, Yu X, Yang D. Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1800050. [PMID: 30479910 PMCID: PMC6247071 DOI: 10.1002/advs.201800050] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2018] [Revised: 04/22/2018] [Indexed: 05/12/2023]
Abstract
To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal-catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect-inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low-temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal-catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h-BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal-catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.
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Affiliation(s)
- Afzal Khan
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Sk Masiul Islam
- Optoelectronics and MOEMS GroupCouncil of Scientific and Industrial Research‐Central Electronics Engineering Research InstitutePilani333031RajasthanIndia
- Academy of Scientific and Innovative Research (AcSIR)Ghaziabad201002Uttar PradeshIndia
| | - Shahzad Ahmed
- Centre for Nanoscience and NanotechnologyJamia Millia Islamia (Central University)New Delhi110025India
| | - Rishi R. Kumar
- Centre for Nanoscience and NanotechnologyJamia Millia Islamia (Central University)New Delhi110025India
| | - Mohammad R. Habib
- State Key Laboratory of Silicon Materials and College of Information Science and Electronic EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Kun Huang
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Ming Hu
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Xuegong Yu
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
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40
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Geng H, Wang T, Cao H, Zhu H, Di Z, Liu X. Antibacterial ability, cytocompatibility and hemocompatibility of fluorinated graphene. Colloids Surf B Biointerfaces 2018; 173:681-688. [PMID: 30384264 DOI: 10.1016/j.colsurfb.2018.10.050] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2018] [Revised: 10/15/2018] [Accepted: 10/18/2018] [Indexed: 11/18/2022]
Abstract
Graphene halides are promising two-dimensional systems which have interesting physical and chemical properties. In particular, high quality fluorinated graphene offers a great potential in modulating variable properties by regulating its surface microstructure. Moreover, the fluorine introduction and carbon-fluorine bonding characters will enable some interesting biological response. Here, the biological responses to bacteria and cells of fluorinated graphene were studied. Present work revealed that partially fluorinated graphene behaved satisfactory antibacterial ability. Fluorinated graphene showed well facilitating function to cell adhesion in early period, however, after a longer incubation period, the enhanced intracellular ROS level in rBMSCs on the fully fluorinated graphene gives rise to the decrease of cell viability. It was found that there is no statistical difference in the activity of alkaline phosphatase (ALP) and matrix mineralization of rBMSCs on pristine graphene, partially fluorinated graphene and fluorographene. In addition, the introduction of fluorine into pristine graphene plane reduced the adhesion and aggregation of blood platelets due to the attenuation of π-π interaction between material surface and blood protein. The findings in this work revealed that partial fluorinated graphene exhibited better antibacterial ability and cytocompatibility, outperforming pristine graphene and fluorographene.
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Affiliation(s)
- Hao Geng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianbo Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Huiliang Cao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Hongqin Zhu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
| | - Xuanyong Liu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
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41
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Lin L, Deng B, Sun J, Peng H, Liu Z. Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene. Chem Rev 2018; 118:9281-9343. [PMID: 30207458 DOI: 10.1021/acs.chemrev.8b00325] [Citation(s) in RCA: 86] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.
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Affiliation(s)
- Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Bing Deng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Jingyu Sun
- Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Physics, Optoelectronics and Energy , Soochow University , Suzhou 215006 , P. R. China.,Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
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42
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Muñoz R, Martínez L, López-Elvira E, Munuera C, Huttel Y, García-Hernández M. Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition. NANOSCALE 2018; 10:12779-12787. [PMID: 29946620 PMCID: PMC6130772 DOI: 10.1039/c8nr03210f] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Direct graphene growth on silicon with a native oxide using plasma enhanced chemical vapour deposition at low temperatures [550 °C-650 °C] is demonstrated for the first time. It is shown that the fine-tuning of a two-step synthesis with gas mixtures C2H2/H2 yields monolayer and few layer graphene films with a controllable domain size from 50 nm to more than 300 nm and the sheet resistance ranging from 8 kΩ sq-1 to less than 1.8 kΩ sq-1. Differences are understood in terms of the interaction of the plasma species - chiefly atomic H - with the deposited graphene and the native oxide layer. The proposed low temperature direct synthesis on an insulating substrate does not require any transfer processes and improves the compatibility with the current industrial processes.
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Affiliation(s)
- Roberto Muñoz
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, (ICMM) Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, E-28049, Madrid, Spain.
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43
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Double quantum criticality in superconducting tin arrays-graphene hybrid. Nat Commun 2018; 9:2159. [PMID: 29867112 PMCID: PMC5986781 DOI: 10.1038/s41467-018-04606-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2017] [Accepted: 04/24/2018] [Indexed: 11/11/2022] Open
Abstract
Two magnetic-field-induced quantum critical behaviors were recently discovered in two dimensional electron gas (2DEG) at LaTiO3/SrTiO3 interface and interpreted by disordered superconducting puddles coupled through 2DEG. In this scenario, the 2DEG is proposed to undergo a spontaneous phase separation and breaks up into locally superconducting puddles in a metallic matrix. However, as the inhomogeneous superconducting 2DEG is only illative, this proposal still lacks the direct experimental demonstration. Here, we artificially construct superconducting puddles-2DEG hybrid system by depositing tin nanoislands array on single crystalline monolayer graphene, where the two quantum critical behaviors are reproduced. Through the finite-size scaling analysis on magnetoresistivity, we show that the two quantum critical behaviors result from the intra-island and inter-island phase coherence, respectively, which are further illustrated by the phase diagram. This work provides a platform to study superconducting quantum phase transitions in a 2D system and helps to integrate superconducting devices into semiconductor technology. Two quantum critical behaviors appear in a two dimensional electron gas (2DEG) but its origin remains to be attested. Here, Sun et al. construct superconducting puddles-2DEG hybrid system by depositing tin nano-islands array on monolayer graphene where the two quantum critical behaviors are reproduced, suggesting the formation of inhomogeneous superconducting 2DEG.
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Li X, Li B, Fan X, Wei L, Li L, Tao R, Zhang X, Zhang H, Zhang Q, Zhu H, Zhang S, Zhang Z, Zeng C. Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties. NANOSCALE 2018; 10:8377-8384. [PMID: 29701214 DOI: 10.1039/c8nr02005a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Silicon and graphene are two wonder materials, and their hybrid heterostructures are expected to be very interesting fundamentally and practically. In the present study, by adopting fast dry transfer and ultra-high vacuum annealing, atomically flat monolayer graphene is successfully prepared on the chemically active Si(111) substrate. More importantly, the graphene overlayer largely maintains its intrinsic electronic properties, as validated by the results of the energy-dependent electronic transparency, Dirac point observation and quantum coherence characteristics, and further confirmed by first-principles calculations. The intrinsic properties of graphene are retained up to 1030 K. The system of atomically flat and thermally stable graphene on a chemically active silicon surface with preserved inherent characteristics renders the graphene/silicon hybrid a promising system in the design of high-performance devices and the exploitation of interfacial topological quantum effects.
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Affiliation(s)
- Xiaoxia Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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45
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Tesch J, Paschke F, Fonin M, Wietstruk M, Böttcher S, Koch RJ, Bostwick A, Jozwiak C, Rotenberg E, Makarova A, Paulus B, Voloshina E, Dedkov Y. The graphene/n-Ge(110) interface: structure, doping, and electronic properties. NANOSCALE 2018; 10:6088-6098. [PMID: 29546912 DOI: 10.1039/c8nr00053k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The implementation of graphene in semiconducting technology requires precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/n-Ge(110) interface are investigated on the local (nm) and macro (from μm to mm) scales via a combination of different microscopic and spectroscopic surface science techniques accompanied by density functional theory calculations. The electronic structure of freestanding graphene remains almost completely intact in this system, with only a moderate n-doping indicating weak interaction between graphene and the Ge substrate. With regard to the optimisation of graphene growth it is found that the substrate temperature is a crucial factor, which determines the graphene layer alignment on the Ge(110) substrate during its growth from the atomic carbon source. Moreover, our results demonstrate that the preparation route for graphene on the doped semiconducting material (n-Ge) leads to the effective segregation of dopants at the interface between graphene and Ge(110). Furthermore, it is shown that these dopant atoms might form regular structures at the graphene/Ge interface and induce the doping of graphene. Our findings help to understand the interface properties of the graphene-semiconductor interfaces and the effect of dopants on the electronic structure of graphene in such systems.
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Affiliation(s)
- Julia Tesch
- Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany
| | - Fabian Paschke
- Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany
| | - Mikhail Fonin
- Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany
| | - Marko Wietstruk
- SPECS Surface Nano Analysis GmbH, Voltastraße 5, 13355 Berlin, Germany
| | - Stefan Böttcher
- SPECS Surface Nano Analysis GmbH, Voltastraße 5, 13355 Berlin, Germany
| | - Roland J Koch
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Aaron Bostwick
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Chris Jozwiak
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Eli Rotenberg
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Anna Makarova
- Institut für Festkörperphysik, Technische Universität Dresden, 01062 Dresden, Germany
| | - Beate Paulus
- Institut für Chemie und Biochemie, Freie Universität Berlin, Takustraße 3, 14195 Berlin, Germany
| | - Elena Voloshina
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shangda Road 99, 200444 Shanghai, China.
| | - Yuriy Dedkov
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shangda Road 99, 200444 Shanghai, China. and Materials Genome Institute, Shanghai University, Shangda Road 99, Shanghai 200444, China.
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46
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Way AJ, Jacobberger RM, Arnold MS. Seed-Initiated Anisotropic Growth of Unidirectional Armchair Graphene Nanoribbon Arrays on Germanium. NANO LETTERS 2018; 18:898-906. [PMID: 29382200 DOI: 10.1021/acs.nanolett.7b04240] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
It was recently discovered that the chemical vapor deposition (CVD) of CH4 on Ge(001) can directly yield long, narrow, semiconducting nanoribbons of graphene with smooth armchair edges. These nanoribbons have exceptional charge transport properties compared with nanoribbons grown by other methods. However, the nanoribbons nucleate at random locations and at random times, problematically giving rise to width and bandgap polydispersity, and the mechanisms that drive the anisotropic crystal growth that produces the nanoribbons are not understood. Here, we study and engineer the seed-initiated growth of graphene nanoribbons on Ge(001). The use of seeds decouples nucleation and growth, controls where growth occurs, and allows graphene to grow with lattice orientations that do not spontaneously form without seeds. We discover that when the armchair direction (i.e., parallel to C-C bonds) of the seeds is aligned with the Ge⟨110⟩ family of directions, the growth anisotropy is maximized, resulting in the formation of nanoribbons with high-aspect ratios. In contrast, increasing misorientation from Ge⟨110⟩ yields decreasingly anisotropic crystals. Measured growth rate data are used to generate a construction analogous to a kinetic Wulff plot that quantitatively predicts the shape of graphene crystals on Ge(001). This knowledge is employed to fabricate regularly spaced, unidirectional arrays of nanoribbons and to significantly improve their uniformity. These results show that seed-initiated graphene synthesis on Ge(001) will be a viable route for creating wafer-scale arrays of narrow, semiconducting, armchair nanoribbons with rationally controlled placement and alignment for a wide range of semiconductor electronics technologies, provided that dense arrays of sub-10 nm seeds can be uniformly fabricated in the future.
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Affiliation(s)
- Austin J Way
- Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
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47
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Wan Y, Xiao J, Li J, Fang X, Zhang K, Fu L, Li P, Song Z, Zhang H, Wang Y, Zhao M, Lu J, Tang N, Ran G, Zhang X, Ye Y, Dai L. Epitaxial Single-Layer MoS 2 on GaN with Enhanced Valley Helicity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1703888. [PMID: 29265489 DOI: 10.1002/adma.201703888] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2017] [Revised: 09/17/2017] [Indexed: 05/27/2023]
Abstract
Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec-1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetime in the MoS2 /GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.
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Affiliation(s)
- Yi Wan
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Jun Xiao
- NSF Nanoscale Science and Engineering Center, University of California, Berkeley, CA, 94720, USA
| | - Jingzhen Li
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xin Fang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Kun Zhang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Lei Fu
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Pan Li
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Zhigang Song
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Hui Zhang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yilun Wang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Mervin Zhao
- NSF Nanoscale Science and Engineering Center, University of California, Berkeley, CA, 94720, USA
| | - Jing Lu
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
| | - Ning Tang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
| | - Guangzhao Ran
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xiang Zhang
- NSF Nanoscale Science and Engineering Center, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yu Ye
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
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48
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Niu T, Jiang Z, Zhu Y, Zhou G, van Spronsen MA, Tenney SA, Boscoboinik JA, Stacchiola D. Oxygen-Promoted Methane Activation on Copper. J Phys Chem B 2017; 122:855-863. [DOI: 10.1021/acs.jpcb.7b06956] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Tianchao Niu
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
| | - Zhao Jiang
- Department
of Chemical Engineering, Xi’an Jiaotong University, Xi’an, 710049, China
| | - Yaguang Zhu
- Department of Mechanical Engineering & Materials Science and Engineering Program, State University of New York, Binghamton, New York 13902, United States
| | - Guangwen Zhou
- Department of Mechanical Engineering & Materials Science and Engineering Program, State University of New York, Binghamton, New York 13902, United States
| | - Matthijs A. van Spronsen
- Department
of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Samuel A. Tenney
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - J. Anibal Boscoboinik
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Dario Stacchiola
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
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49
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Lin H, Braeuninger-Weimer P, Kamboj VS, Jessop DS, Degl'Innocenti R, Beere HE, Ritchie DA, Zeitler JA, Hofmann S. Contactless graphene conductivity mapping on a wide range of substrates with terahertz time-domain reflection spectroscopy. Sci Rep 2017; 7:10625. [PMID: 28878213 PMCID: PMC5587735 DOI: 10.1038/s41598-017-09809-7] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2017] [Accepted: 08/07/2017] [Indexed: 11/09/2022] Open
Abstract
We demonstrate how terahertz time-domain spectroscopy (THz-TDS) operating in reflection geometry can be used for quantitative conductivity mapping of large area chemical vapour deposited graphene films on sapphire, silicon dioxide/silicon and germanium. We validate the technique against measurements performed with previously established conventional transmission based THz-TDS and are able to resolve conductivity changes in response to induced back-gate voltages. Compared to the transmission geometry, measurement in reflection mode requires careful alignment and complex analysis, but circumvents the need of a terahertz transparent substrate, potentially enabling fast, contactless, in-line characterisation of graphene films on non-insulating substrates such as germanium.
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Affiliation(s)
- Hungyen Lin
- Department of Engineering, Lancaster University, Lancaster, LA1 4YW, United Kingdom.
| | - Philipp Braeuninger-Weimer
- Department of Engineering, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom.
| | - Varun S Kamboj
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, United Kingdom
| | - David S Jessop
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, United Kingdom
| | - Riccardo Degl'Innocenti
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, United Kingdom
| | - Harvey E Beere
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, United Kingdom
| | - David A Ritchie
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, United Kingdom
| | - J Axel Zeitler
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, CB2 3RA, United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
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50
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Kazemi A, Vaziri S, Aguirre Morales JD, Frégonèse S, Cavallo F, Zamiri M, Dawson N, Artyushkova K, Jiang YB, Brueck SJR, Krishna S. Vertical Charge Transfer and Lateral Transport in Graphene/Germanium Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2017; 9:15830-15840. [PMID: 28425287 DOI: 10.1021/acsami.7b01424] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Heterostructures consisting of two-dimensional (2D) materials and conventional semiconductors have attracted a lot of attention due to their application in novel device concepts. In this work, we investigated the lateral transport characteristics of graphene/germanium heterostructures and compared them with the transport properties of graphene on SiO2. The heterostructures were fabricated by transferring a single layer of graphene (Gr) onto a lightly doped germanium (Ge) (100) substrate. The field-effect measurements revealed a shift in the Dirac voltage of Gr on the Ge substrates compared to that of the Gr on SiO2. Transfer length model measurements show a significant difference in the sheet resistance of Gr on Ge compared to that of the Gr on SiO2. The results from the electrical and structural characterization suggest that a charge transfer in the order of 1012 cm-2 occurs between Gr and Ge resulting in a doping effect in the graphene sheet. A compact electrostatic model extracted the key electronic properties of the Gr/Ge interface. This study provides valuable insights into the electronic properties of Gr on Ge, which are vital to the development of novel devices based on mixed 2D and 3D structures.
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Affiliation(s)
- Alireza Kazemi
- Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210, United States
- Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87106, United States
| | - Sam Vaziri
- Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | | | | | - Francesca Cavallo
- Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87106, United States
| | - Marziyeh Zamiri
- University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Noel Dawson
- Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87106, United States
| | - Kateryna Artyushkova
- Department of Chemical and Nuclear Engineering, University of New Mexico , Albuquerque, New Mexico 87131, United States
| | - Ying Bing Jiang
- Center for Micro-Engineered Materials, University of New Mexico , Albuquerque, New Mexico 87106, United States
| | - Steven J R Brueck
- Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87106, United States
| | - Sanjay Krishna
- Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210, United States
- Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87106, United States
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