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Yang H, Javed K, Li X, Zou Y, Dai X, He H, Qiao X, Tao G. Development of structure-tailored and composite magnetic-fluorescent microspheres through the PRI method. iScience 2024; 27:110407. [PMID: 39081287 PMCID: PMC11284680 DOI: 10.1016/j.isci.2024.110407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 05/14/2024] [Accepted: 06/13/2024] [Indexed: 08/02/2024] Open
Abstract
Multifunctional micro- and nanoparticles have found their applications in fields like medicine, display materials, cosmetics, and so on. Advances in these fields have been demonstrated to need scalable uniformly sized, mass-produced, and structured spherical particles. In this work, we proposed structure-tailored and multifunctional composite polymeric microspheres with tunable diameter size, by using a versatile and scalable in-fiber particle fabrication through the Plateau-Rayleigh capillary instability method. The results show that the characteristic shapes of the luminescence spectra of CsPbBr3 remained similar before and after embedding in the microspheres. The luminescence intensity was stabilized at 85-90% of their original photoluminescence intensities over an extended period. Moreover, the photoluminescence lifetime of the fluorescent microspheres was increased by 9.03% compared to CsPbBr3. The X-ray diffraction results revealed that there was no change in the crystal structure of the dopants before and after the encapsulation. Also, precise magnetic manipulation of Janus microspheres was successfully demonstrated.
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Affiliation(s)
- Haochuan Yang
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Khalid Javed
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xi Li
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Yuqi Zou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Xvsheng Qiao
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Guangming Tao
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Key Laboratory of Vascular Aging, Ministry of Education, Tongji Hospital Tongji Medical College, Huazhong University of Science and Technology, Wuhan, Hubei 430030, China
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- School of Physical Education, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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2
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Zhang S, Zhou X, Nie Z, Su C, Lu Q, Wei J, Liu T, Chi M, Luo B, Liu Y, Cai C, Wang J, Gao C, Wang S, Nie S. Smart Lanceolate Surface with Fast Fog-Digesting Performance for Triboelectric Energy Harvesting. ACS NANO 2024. [PMID: 39088752 DOI: 10.1021/acsnano.4c05403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2024]
Abstract
Utilizing the ubiquitous fog in nature to create decentralized energy-harvesting devices, free from geographical and hydrological constraints, presents an opportunity to foster sustainable power generation. Extracting electrical energy from fog relies heavily on fog-digesting performance. Improving the efficiency of fogwater utilization remains a formidable challenge for existing fogwater energy-harvesting technologies. Inspired by the water-harvesting behavior of Tillandsia leaves, a smart lanceolate surface is developed to harvest triboelectric energy by rapidly digesting fog. Such a surface exhibits capabilities in fog management, encompassing precise fog capture, transportation, and critical droplet separation. Specifically, fog droplets condense at hydrophilic sites of acylated cellulose ester, subsequently migrating toward the rear under Laplace pressure, thereby producing energy as they traverse through the tail end. Such architecture yields a brief voltage restoration period (with an average of 9.36 s), can rush the capacitor to 11.59 V within 20 s, and achieves a water-digestion rate of up to 71.05 kg/m2 h. This biomimetic approach enhances the water-digestion efficacy of the atmospheric water energy apparatus and offers perspectives on mitigating deficiencies in power resources.
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Affiliation(s)
- Song Zhang
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Xujun Zhou
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Zhichao Nie
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, PR China
| | - Chaolin Su
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Qizhao Lu
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Jiajia Wei
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Tao Liu
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Mingchao Chi
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Bin Luo
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Yanhua Liu
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Chenchen Cai
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Jinlong Wang
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Cong Gao
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Shuangfei Wang
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
| | - Shuangxi Nie
- School of Light Industry and Food Engineering, Guangxi University, Nanning 530004, PR China
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3
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Rossi M, van Schijndel TAJ, Lueb P, Badawy G, Jung J, Peeters WHJ, Kölling S, Moutanabbir O, Verheijen MA, Bakkers EPAM. Stemless InSb nanowire networks and nanoflakes grown on InP. NANOTECHNOLOGY 2024; 35:415602. [PMID: 38991513 DOI: 10.1088/1361-6528/ad61ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Accepted: 07/11/2024] [Indexed: 07/13/2024]
Abstract
Among the experimental realization of fault-tolerant topological circuits are interconnecting nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks formed by merging are potential candidates. Yet, their growth requires a foreign material stem usually made of InP-InAs. This stem imposes limitations, which include restricting the size of the nanowire network, inducing disorder through grain boundaries and impurity incorporation. Here, we omit the stem allowing for the growth of stemless InSb nanowire networks on an InP substrate. To enable the growth without the stem, we show that a preconditioning step using arsine (AsH3) is required before InSb growth. High-yield of stemless nanowire growth is achieved by patterning the substrate with a selective-area mask with nanohole cavities, containing restricted gold droplets from which nanowires originate. Interestingly, these nanowires are bent, posing challenges for the synthesis of interconnecting nanowire networks due to merging failure. We attribute this bending to the non-homogeneous incorporation of arsenic impurities in the InSb nanowires and the interposed lattice-mismatch. By tuning the growth parameters, we can mitigate the bending, yielding large and single crystalline InSb nanowire networks and nanoflakes. The improved size and crystal quality of these nanostructures broaden the potential of this technique for fabricating advanced quantum devices.
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Affiliation(s)
- Marco Rossi
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Teun A J van Schijndel
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Pim Lueb
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Ghada Badawy
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Jason Jung
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Wouter H J Peeters
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Sebastian Kölling
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Marcel A Verheijen
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Eurofins Materials Science Netherlands B.V., High Tech Campus 11, 5656 AE, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
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Gorshkov VN, Stretovych MO, Semeniuk VF, Kruglenko MP, Semeniuk NI, Styopkin VI, Gabovich AM, Boiger GK. Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition: Fundamentals and Applications for Photovoltaics. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2715. [PMID: 37836356 PMCID: PMC10574651 DOI: 10.3390/nano13192715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Revised: 09/27/2023] [Accepted: 10/02/2023] [Indexed: 10/15/2023]
Abstract
Ion-flow-stimulated roughening transition is a phenomenon that may prove useful in the hierarchical structuring of nanostructures. In this work, we have investigated theoretically and experimentally the surface texturing of single-crystal and multi-crystalline silicon wafers irradiated using ion-beam flows. In contrast to previous studies, ions had relatively low energies, whereas flow densities were high enough to induce a quasi-liquid state in the upper silicon layers. The resulting surface modifications reduced the wafer light reflectance to values characteristic of black silicon, widely used in solar energetics. Features of nanostructures on different faces of silicon single crystals were studied numerically based on the mesoscopic Monte Carlo model. We established that the formation of nano-pyramids, ridges, and twisting dune-like structures is due to the stimulated roughening transition effect. The aforementioned variety of modified surface morphologies arises due to the fact that the effects of stimulated surface diffusion of atoms and re-deposition of free atoms on the wafer surface from the near-surface region are manifested to different degrees on different Si faces. It is these two factors that determine the selection of the allowable "trajectories" (evolution paths) of the thermodynamic system along which its Helmholtz free energy, F, decreases, concomitant with an increase in the surface area of the wafer and the corresponding changes in its internal energy, U (dU>0), and entropy, S (dS>0), so that dF=dU - TdS<0, where T is the absolute temperature. The basic theoretical concepts developed were confirmed in experimental studies, the results of which showed that our method could produce, abundantly, black silicon wafers in an environmentally friendly manner compared to traditional chemical etching.
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Affiliation(s)
- Vyacheslav N. Gorshkov
- Igor Sikorsky Kyiv Polytechnic Institute, National Technical University of Ukraine, Prospect Beresteiskyi, 37, 03056 Kyiv, Ukraine;
- G.V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Academician Vernadsky Boulevard, 03142 Kyiv, Ukraine
- Department of Mechanical and Aerospace Engineering, University of Liverpool, Liverpool L69 3GH, UK
| | - Mykola O. Stretovych
- Igor Sikorsky Kyiv Polytechnic Institute, National Technical University of Ukraine, Prospect Beresteiskyi, 37, 03056 Kyiv, Ukraine;
| | - Valerii F. Semeniuk
- Institute of Physics of the Ukrainian National Academy of Sciences, Nauka Avenue, 46, 03028 Kyiv, Ukraine; (V.F.S.); (M.P.K.); (V.I.S.); (A.M.G.)
- GreSem Innovation LLC, Vyzvolyteliv Avenue, 13, 02660 Kyiv, Ukraine;
| | - Mikhail P. Kruglenko
- Institute of Physics of the Ukrainian National Academy of Sciences, Nauka Avenue, 46, 03028 Kyiv, Ukraine; (V.F.S.); (M.P.K.); (V.I.S.); (A.M.G.)
- GreSem Innovation LLC, Vyzvolyteliv Avenue, 13, 02660 Kyiv, Ukraine;
| | | | - Victor I. Styopkin
- Institute of Physics of the Ukrainian National Academy of Sciences, Nauka Avenue, 46, 03028 Kyiv, Ukraine; (V.F.S.); (M.P.K.); (V.I.S.); (A.M.G.)
| | - Alexander M. Gabovich
- Institute of Physics of the Ukrainian National Academy of Sciences, Nauka Avenue, 46, 03028 Kyiv, Ukraine; (V.F.S.); (M.P.K.); (V.I.S.); (A.M.G.)
| | - Gernot K. Boiger
- ICP Institute of Computational Physics, ZHAW Zürich University of Applied Sciences, Wildbachstrasse 21, CH-8401 Winterthur, Switzerland
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5
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Song J, Zhang W, Wang D, Fan Y, Zhang C, Wang D, Chen L, Miao B, Cui J, Deng X. Polymeric Microparticles Generated via Confinement-Free Fluid Instability. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007154. [PMID: 33891327 DOI: 10.1002/adma.202007154] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2020] [Revised: 03/05/2021] [Indexed: 06/12/2023]
Abstract
In-fiber fluid instability can be harnessed to realize scalable microparticles fabrication with tunable sizes and multifunctional characteristics making it competitive in comparison to conventional microparticles fabrication methods. However, since in-fiber fluid instability has to be induced via thermal annealing and the resulting microparticles can only be collected after dissolving the fiber cladding, obtaining contamination-free particles for high-temperature incompatible materials remains great challenge. Herein, confinement-free fluid instability is demonstrated to fabricate polymeric microparticles in a facile manner induced by the ultralow surface energy of the superamphiphobic surface. The polymer solution columns break up into uniform droplets then form spherical particles spontaneously in seconds at ambient temperature. This method can be applied to a variety of polymers spanning an exceptionally wide range of sizes: from 1 mm down to 1 µm. With the aid of microfluidic spinning instrument, a large quantity of microparticles can be obtained, making this method promising for scaling up production. Notably, through simple modification of the feed solution configuration, composite/structured micromaterials can also be produced, including quantum-dots-labeled fluorescent particles, magnetic particles, core-shell particles, microcapsules, and necklace-like microfibers. This method, with general applicability and facile control, is envisioned to have great prospects in the field of polymer microprocessing.
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Affiliation(s)
- Jianing Song
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Wenluan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Dehui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yue Fan
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chenglin Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Dapeng Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
| | - Longquan Chen
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Bing Miao
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jiaxi Cui
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xu Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, P. R. China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, P. R. China
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6
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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001). NANOMATERIALS 2021; 11:nano11030788. [PMID: 33808713 PMCID: PMC8003543 DOI: 10.3390/nano11030788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/27/2021] [Revised: 03/14/2021] [Accepted: 03/16/2021] [Indexed: 11/16/2022]
Abstract
Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.
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Gorshkov VN, Tereshchuk VV, Sareh P. Roughening transition as a driving factor in the formation of self-ordered one-dimensional nanostructures. CrystEngComm 2021. [DOI: 10.1039/d0ce01404d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Abstract
Peculiar scenarios in the dynamics of BCC and FCC 1D-nanostructures leading to the formation of ultra-short, and sometimes stable, high-amplitude surface modulations are analysed and the means of achieving the desired periodicity are discussed.
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Affiliation(s)
- Vyacheslav N. Gorshkov
- National Technical University of Ukraine, Igor Sikorsky Kyiv Polytechnic Institute
- Kiev 03056
- Ukraine
- Center for Advanced Materials Processing
- Departments of Chemistry and Physics
| | - Vladimir V. Tereshchuk
- National Technical University of Ukraine, Igor Sikorsky Kyiv Polytechnic Institute
- Kiev 03056
- Ukraine
| | - Pooya Sareh
- Creative Design Engineering Lab (Cdel)
- Department of Mechanical
- Materials, and Aerospace Engineering
- School of Engineering
- University of Liverpool
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8
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Zhao J, Chen B, Wang F. Shedding Light on the Role of Misfit Strain in Controlling Core-Shell Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004142. [PMID: 33051904 DOI: 10.1002/adma.202004142] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Revised: 07/21/2020] [Indexed: 05/17/2023]
Abstract
Heteroepitaxial modification of nanomaterials has become a powerful means to create novel functionalities for various applications. One of the most elementary factors in heteroepitaxial nanostructures is the misfit strain arising from mismatched lattices of the constituent parts. Misfit strain not only dictates epitaxy kinetics for diversifying nanocrystal morphologies but also provides rational control over materials properties. In recent years, advances in chemical synthesis along with the rapid development of electron microscopy and X-ray diffraction techniques have enabled a substantial understanding of strain-related processes, which offers theoretical foundation and experimental guidance for researchers to refine heteroepitaxial nanostructures and their properties. Herein, recent investigations on heterogeneous core-shell nanocrystals containing misfit strains are summarized, with a focus on the mechanistic understanding of strain and strain-induced effects such as tuning the epitaxial habit, modulating the optical emission, and enhancing the catalytic activity and magnetic coercivity.
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Affiliation(s)
- Jianxiong Zhao
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong SAR, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
| | - Bing Chen
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong SAR, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
| | - Feng Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong SAR, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
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9
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Zhao J, Chen B, Chen X, Zhang X, Sun T, Su D, Wang F. Tuning epitaxial growth on NaYbF 4 upconversion nanoparticles by strain management. NANOSCALE 2020; 12:13973-13979. [PMID: 32579658 DOI: 10.1039/d0nr03374j] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Core-shell structural engineering is a common strategy for tuning upconversion luminescence in lanthanide-doped nanoparticles. However, epitaxial growth on hexagonal phase NaYbF4 nanoparticles typically suffers from incomplete shell coverage due to the large and anisotropic interfacial strain. Herein, we explore the effects of core particle size and morphology as well as reaction temperature on controlling the epitaxial growth of NaGdF4 shells on NaYbF4 nanoparticles with misfit parameters of fa = 1.58% and fl = 2.24% for axial and lateral growth, respectively. Rod-like core particles with a long length and a large diameter are found to promote shell growth with high surface coverage by facilitating the relaxation of lattice strains. Furthermore, the primary NaGdF4 shell can serve as a transition layer to mediate the growth of additional NaNdF4 coating layers that display an even larger lattice misfit with the core (fa = 2.98%; fl = 4.32%). The resultant NaYbF4@Na(Gd/Nd)F4 core-shell nanostructures simultaneously show strong multiphoton upconversion luminescence and superior magnetic resonance T1 ionic relaxivity. Our findings are important for the rational design of core-shell upconversion nanoparticles with optimized properties and functionality for technological applications.
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Affiliation(s)
- Jianxiong Zhao
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong SAR, China.
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Ansari MA, Murali M, Prasad D, Alzohairy MA, Almatroudi A, Alomary MN, Udayashankar AC, Singh SB, Asiri SMM, Ashwini BS, Gowtham HG, Kalegowda N, Amruthesh KN, Lakshmeesha TR, Niranjana SR. Cinnamomum verum Bark Extract Mediated Green Synthesis of ZnO Nanoparticles and Their Antibacterial Potentiality. Biomolecules 2020; 10:E336. [PMID: 32092985 PMCID: PMC7072335 DOI: 10.3390/biom10020336] [Citation(s) in RCA: 43] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2019] [Revised: 02/15/2020] [Accepted: 02/17/2020] [Indexed: 01/20/2023] Open
Abstract
Cinnamomum verum plant extract mediated propellant chemistry route was used for the green synthesis of zinc oxide nanoparticles. Prepared samples were confirmed for their nano regime using advanced characterization techniques such as powder X-ray diffraction and microscopic techniques such as scanning electron microscopy and transmission electron microscopy. The energy band gap of the green synthesized zinc oxide (ZnO)-nanoparticles (NPs) were found between 3.25-3.28 eV. Fourier transmission infrared spectroscopy shows the presence of Zn-O bond within the wave number of 500 cm-1. SEM images show the specific agglomeration of particles which was also confirmed by TEM studies. The green synthesized ZnO-NPs inhibited the growth of Escherichia coli and Staphylococcus aureus with a minimum inhibitory concentration (MIC) of 125 µg mL-1 and 62.5 µg mL-1, respectively. The results indicate the prepared ZnO-NPs can be used as a potential antimicrobial agent against harmful pathogens.
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Affiliation(s)
- Mohammad Azam Ansari
- Department of Epidemic Disease Research, Institutes for Research and Medical Consultations (IRMC), Imam Abdulrahman Bin Faisal University, Dammam 31441, Saudi Arabia
| | - Mahadevamurthy Murali
- Applied Plant Pathology Laboratory, Department of Studies in Botany, University of Mysore, Manasagangotri, Mysore 570006, Karnataka, India; (M.M.); (H.G.G.); (N.K.); (K.N.A.)
| | - Daruka Prasad
- Department of Physics, B.M.S. Institute of Technology, Bangalore 560 064, India;
| | - Mohammad A. Alzohairy
- Department of Medical Laboratories, College of Applied Medical Sciences, Qassim University, Qassim 51431, Saudi Arabia; (M.A.A.); (A.A.)
| | - Ahmad Almatroudi
- Department of Medical Laboratories, College of Applied Medical Sciences, Qassim University, Qassim 51431, Saudi Arabia; (M.A.A.); (A.A.)
| | - Mohammad N. Alomary
- National Center for Biotechnology, Life Science and Environmental Research Institute, King Abdulaziz City for Science and Technology, P.O. Box 6086, Riyadh, Saudi Arabia;
| | | | - Sudarshana Brijesh Singh
- Department of Studies in Biotechnology, Manasagangotri, University of Mysore, Mysuru- 570 006, Karnataka, India; (A.C.U.); (S.B.S.)
| | - Sarah Mousa Maadi Asiri
- Department of Biophysics, Institutes for Research and Medical Consultations (IRMC), Imam Abdulrahman Bin Faisal University, Dammam 31441, Saudi Arabia;
| | | | - Hittanahallikoppal Gajendramurthy Gowtham
- Applied Plant Pathology Laboratory, Department of Studies in Botany, University of Mysore, Manasagangotri, Mysore 570006, Karnataka, India; (M.M.); (H.G.G.); (N.K.); (K.N.A.)
| | - Nataraj Kalegowda
- Applied Plant Pathology Laboratory, Department of Studies in Botany, University of Mysore, Manasagangotri, Mysore 570006, Karnataka, India; (M.M.); (H.G.G.); (N.K.); (K.N.A.)
| | - Kestur Nagaraj Amruthesh
- Applied Plant Pathology Laboratory, Department of Studies in Botany, University of Mysore, Manasagangotri, Mysore 570006, Karnataka, India; (M.M.); (H.G.G.); (N.K.); (K.N.A.)
| | - Thimappa Ramachandrappa Lakshmeesha
- Department of Studies in Biotechnology, Manasagangotri, University of Mysore, Mysuru- 570 006, Karnataka, India; (A.C.U.); (S.B.S.)
- Department of Microbiology and Biotechnology, Jnana Bharathi Campus, Bangalore University, Bangalore 560056, India
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11
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Balaghi L, Bussone G, Grifone R, Hübner R, Grenzer J, Ghorbani-Asl M, Krasheninnikov AV, Schneider H, Helm M, Dimakis E. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch. Nat Commun 2019; 10:2793. [PMID: 31243278 PMCID: PMC6595053 DOI: 10.1038/s41467-019-10654-7] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2018] [Accepted: 05/20/2019] [Indexed: 11/09/2022] Open
Abstract
The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.
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Affiliation(s)
- Leila Balaghi
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Genziana Bussone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - Raphael Grifone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Jörg Grenzer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany.
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12
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Zang H, Chen H, Li X, Zhao Y. An analytical model for the bending of radial nanowire heterostructures. Phys Chem Chem Phys 2019; 21:9477-9482. [PMID: 31016290 DOI: 10.1039/c9cp00434c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
The balance between surface energy and elastic strain energy determines the bending induced by heteroepitaxial growth on the surface of thin nanowires.
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Affiliation(s)
- Hang Zang
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science
- College of Biophotonics
- South China Normal University
- Guangzhou 510631
- China
| | - Huadong Chen
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science
- College of Biophotonics
- South China Normal University
- Guangzhou 510631
- China
| | - Xinlei Li
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science
- College of Biophotonics
- South China Normal University
- Guangzhou 510631
- China
| | - Yanping Zhao
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science
- College of Biophotonics
- South China Normal University
- Guangzhou 510631
- China
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13
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Zhao Y, Ma H, Dong T, Wang J, Yu L, Xu J, Shi Y, Chen K, Roca I Cabarrocas P. Nanodroplet Hydrodynamic Transformation of Uniform Amorphous Bilayer into Highly Modulated Ge/Si Island-Chains. NANO LETTERS 2018; 18:6931-6940. [PMID: 30346786 DOI: 10.1021/acs.nanolett.8b02847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Geometric and compositional modulations are the principal parameters of control to tailor the band profile in germanium/silicon (Ge/Si) heteronanowires (NWs). This has been achieved mainly by alternating the feeding precursors during a uniaxial growth of Ge/Si NWs. In this work, a self-automated growth of Ge/Si hetero island-chain nanowires (hiNWs), consisting of wider c-Ge islands connected by thinner c-Si chains, has been accomplished via an indium (In) droplet-mediated transformation of uniform amorphous a-Si/a-Ge bilayer thin films. The surface-running In droplet enforces a circulative hydrodynamics in the nanoscale droplet, which can modulate the absorption depth into the amorphous bilayer and enable a single-run growth of a superlattice-like hiNWs without the need for any external manipulation. Meanwhile, the separation and accumulation of electrons and holes in the phase-modulated Ge/Si superlattice leads to a modulated surface potential profile that can be directly resolved by Kelvin probe force microscopy. This simple self-assembly growth and modulation dynamics can help to establish a powerful new concept or strategy to tailor and program the geometric and compositional profiles of more complex hetero nanowire structures, as promising building blocks to develop advanced nanoelectronics or optoelectronics.
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Affiliation(s)
- Yaolong Zhao
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Haiguang Ma
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
- LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau , France
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Yi Shi
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
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14
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Oh H, Lee J, Seo M, Baek IU, Byun JY, Lee M. Laser-Induced Dewetting of Metal Thin Films for Template-Free Plasmonic Color Printing. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38368-38375. [PMID: 30360063 DOI: 10.1021/acsami.8b13675] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Plasmonic color laser printing has several advantages over pigment-based technology, including the absence of ink and toner and the production of nonfading colors. However, the current printing method requires a template that should be prepared via nanofabrication processes, making it impractical for large-area color images. In this study, we show that laser-induced dewetting of metal thin films by a nanosecond pulsed laser can be effectively utilized for plasmonic color printing. Ag, Au, and their complex films deposited on a glass substrate were dewetted into different surface structures such as droplets, rods, and ripples, depending on the incident laser energy. The resulting morphological evolutions could be explained by Rayleigh and capillary instabilities. For a bimetallic film comprising Ag nanowires coated on a Au layer, a few different plasmonic colors were generated from a single sample simply by changing the laser fluence. This provides a possible method for implementing plasmonic color laser printing without using a prepatterned template.
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Affiliation(s)
- Harim Oh
- Department of Materials Science and Engineering , Yonsei University , Seoul 120-749 , Korea
| | - Jeeyoung Lee
- Department of Materials Science and Engineering , Yonsei University , Seoul 120-749 , Korea
| | - Minseok Seo
- Department of Materials Science and Engineering , Yonsei University , Seoul 120-749 , Korea
| | - In Uk Baek
- Materials Architecture Research Center , Korea Institute of Science and Technology , Seoul 02792 , Korea
| | - Ji Young Byun
- Materials Architecture Research Center , Korea Institute of Science and Technology , Seoul 02792 , Korea
| | - Myeongkyu Lee
- Department of Materials Science and Engineering , Yonsei University , Seoul 120-749 , Korea
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15
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Wang Z, Wu HH, Li Q, Besenbacher F, Zeng XC, Dong M. Self-scrolling MoS 2 metallic wires. NANOSCALE 2018; 10:18178-18185. [PMID: 30255900 DOI: 10.1039/c8nr04611e] [Citation(s) in RCA: 42] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials with strong in-plane chemical bonds and weak interaction in the out-of-plane direction have been acknowledged as a basic building block for designing dimensional materials in 0D, 1D, 2D and 3D forms. Compared to the explosive research on 2D vdW materials, quasi-one-dimensional (quasi-1D) vdW materials have received rare attention, despite the fact that they also present rich physics in electronics and engineering implications. Herein, quasi-1D MoS2 nanoscrolls are directly fabricated from CVD-grown 2D triangular MoS2 sheets. The formation, stability and electronic properties of quasi-1D MoS2 nanoscrolls are studied experimentally and theoretically. The formation of a nanoscroll always starts from the edge of a triangular MoS2 sheet along its armchair orientation. The electronic properties of MoS2 nanoscrolls are systemically studied with optical spectroscopy and electrical transport together with density-functional theory (DFT) calculations. Surprisingly, the carrier mobility and contact properties of MoS2 nanoscroll based field effect transistors (FETs) are distinct from that of 2D MoS2 sheets. The transition from a 2D semiconductor MoS2 sheet to a 1D metallic MoS2 nanoscroll is successfully achieved. It is expected that this method of fabricating MoS2 nanoscrolls will attract wide interest for 1D transition metal dichalcogenides with novel physical and chemical properties.
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Affiliation(s)
- Zegao Wang
- Department of Materials Science, Sichuan University, Chengdu 610065, China
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16
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Jiang Z, Jiang Q, Huang R, Sun M, Wang K, Kuang Q, Zhu ZZ, Xie Z. Chemically initiated liquid-like behavior and fabrication of periodic wavy Cu/CuAu nanocables with enhanced catalytic properties. NANOSCALE 2018; 10:9012-9020. [PMID: 29717313 DOI: 10.1039/c8nr01174e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Solid crystalline materials have long range order in their atomic arrangement while liquids have short range order, and the transition between them is usually caused by heat and/or pressure. Herein, we report the finding that chemical processes may play a similar role as heat and initiate liquid-like behavior of crystalline nanomaterials at a temperature far below their melting points. When the straight Cu/CuAu crystalline nanocables are dispersed in organic amine at 80 °C under ambient conditions, the continuous oxidation of Cu atoms on the surface and diffusion of Cu atoms from the core to the surface would break up the long-range ordered arrangement of atoms and lead to the transformation of an anisotropic crystal into an isotropic liquid-like state, which resulted in the evolution of the straight morphology of the nanocables into periodic wavy structures following the Rayleigh instability. It was also demonstrated that periodic wavy Cu@CuAu nanocables exhibit much better catalytic activity than straight Cu@CuAu nanocables towards the reduction of p-nitrophenol into p-aminophenol by NaBH4. Our results not only provide new insights into the transition between a solid crystal and a liquid-like state at the nanoscale, but also facilitate the development of new strategies for the synthesis of functional nanomaterials.
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Affiliation(s)
- Zhiyuan Jiang
- State Key Laboratory of Physical Chemistry of Solid Surface, and College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
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17
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Li Y, Su M, Li Z, Huang Z, Li F, Pan Q, Ren W, Hu X, Song Y. Patterned Arrays of Functional Lateral Heterostructures via Sequential Template-Directed Printing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800792. [PMID: 29707903 DOI: 10.1002/smll.201800792] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2018] [Revised: 03/17/2018] [Indexed: 06/08/2023]
Abstract
The precise integration of microscale dots and lines with controllable interfacing connections is highly important for the fabrication of functional devices. To date, the solution-processible methods are used to fabricate the heterogeneous micropatterns for different materials. However, for increasingly miniaturized and multifunctional devices, it is extremely challenging to engineer the uncertain kinetics of a solution on the microstructures surfaces, resulting in uncontrollable interface connections and poor device performance. Here, a sequential template-directed printing process is demonstrated for the fabrication of arrayed microdots connected by microwires through the regulation of the Rayleigh-Taylor instability of material solution or suspension. Flexibility in the control of fluidic behaviors can realize precise interface connection between the micropatterns, including the microwires traversing, overlapping or connecting the microdots. Moreover, various morphologies such as circular, rhombic, or star-shaped microdots as well as straight, broken or curved microwires can be achieved. The lateral heterostructure printed with two different quantum dots displays bright dichromatic photoluminescence. The ammonia gas sensor printed by polyaniline and silver nanoparticles exhibits a rapid response time. This strategy can construct heterostructures in a facile manner by eliminating the uncertainty of the multimaterials interface connection, which will be promising for the development of novel lateral functional devices.
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Affiliation(s)
- Yifan Li
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Meng Su
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
| | - Zheng Li
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhandong Huang
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fengyu Li
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qi Pan
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wanjie Ren
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiaotian Hu
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yanlin Song
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
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18
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Lewis RB, Corfdir P, Küpers H, Flissikowski T, Brandt O, Geelhaar L. Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core-Shell Heterostructures. NANO LETTERS 2018; 18:2343-2350. [PMID: 29570304 DOI: 10.1021/acs.nanolett.7b05221] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realize arrays of extremely and controllably bent nanowires comprising lattice-mismatched and highly asymmetric core-shell heterostructures. Strain sharing across the nanowire heterostructures is sufficient to bend vertical nanowires over backward to contact either neighboring nanowires or the substrate itself, presenting new possibilities for designing nanowire networks and interconnects. Photoluminescence spectroscopy on bent-nanowire heterostructures reveals that spatially varying strain fields induce charge carrier drift toward the tensile-strained outside of the nanowires, and that the polarization response of absorbed and emitted light is controlled by the bending direction. This unconventional strain field is employed for light emission by placing an active region of quantum dots at the outer side of a bent nanowire to exploit the carrier drift and tensile strain. These results demonstrate how bending in nanoheterostructures opens up new degrees of freedom for strain and device engineering.
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Affiliation(s)
- Ryan B Lewis
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Pierre Corfdir
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Timur Flissikowski
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Oliver Brandt
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
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19
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Zhang G, Tateno K, Sogawa T, Gotoh H. Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale. NANOTECHNOLOGY 2018; 29:155202. [PMID: 29376842 DOI: 10.1088/1361-6528/aaab17] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report diameter-tailored luminescence in telecom band of InP/InAs multi-heterostructure nanowires with continuously-modulated diameter from microscale to nanoscale. By using the self-catalyzed vapor-solid-liquid approach, we tune the indium particle size, and consequently the InP/InAs nanowire diameter, during growth by modulating the flow rate of the indium source material. This technique allows a high degree of continuous tuning in a wide scale from microscale to nanoscale. Hence it offers an original way to bridge the gap between microscale-featured photolithographic and nanoscale-featured nanolithographic processes and to incorporate InAs quantum disks with tunable diameters into a single InP/InAs quantum heterostructure nanowire. We realized site-defined nanowires with nanoscale diameters initiated from site-defined microscale-diameter particles made with a conventional photolithographic process. The luminescence wavelength from InAs quantum disks is directly connected to the nanowire diameter, by which the strain in the InAs quantum disks is tailored. This work provides new opportunities in the fabrication and design of nanowire devices that extends beyond what is achievable with the current technologies and enables the nanowire shape to be engineered thus offering the potential to broaden the application range of nanowire devices.
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Affiliation(s)
- Guoqiang Zhang
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan. NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
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20
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Asl BA, Mogharizadeh L, Khomjani N, Rasti B, Pishva SP, Akhtari K, Attar F, Falahati M. Probing the interaction of zero valent iron nanoparticles with blood system by biophysical, docking, cellular, and molecular studies. Int J Biol Macromol 2018; 109:639-650. [DOI: 10.1016/j.ijbiomac.2017.12.085] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2017] [Revised: 12/14/2017] [Accepted: 12/15/2017] [Indexed: 10/18/2022]
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21
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He Z, Yang Y, Liu JW, Yu SH. Emerging tellurium nanostructures: controllable synthesis and their applications. Chem Soc Rev 2018; 46:2732-2753. [PMID: 28425532 DOI: 10.1039/c7cs00013h] [Citation(s) in RCA: 101] [Impact Index Per Article: 16.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Tellurium (Te) is a rare element in trace amounts of about one part per billion, comparable to that of platinum and ranked 75th in the abundance of the elements in the earth crust. Te nanostructures, as narrow bandgap semiconductors, have numerous potential applications in the fabrication of many modern devices. The past decades have witnessed an explosion in new strategies for synthesizing diverse emerging Te nanostructures with controlled compositions, sizes, shapes, and structures. Their structure-determined nature makes functional Te nanomaterials an attractive candidate for modern applications. This review focuses on the synthesis and morphology control of emerging Te nanostructures and summarizes the latest developments in the applications of Te nanostructures, such as their use as chemical transformation templates to access a huge family of nanowires/nanotubes, batteries, photodetectors, ion detection and removal, element doping, piezoelectric energy harvesting, gas sensing, thermoelectric devices and many other device applications. Various Te nanostructures with different shapes and structures will exploit the beneficial properties associated with their assembly process and nanofabrication. Finally, the prospects for future applications of Te nanomaterials are summarized and highlighted.
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Affiliation(s)
- Zhen He
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Collaborative Innovation Center of Suzhou Nano Science and Technology, Hefei Science Centre, CAS, CAS Center for Excellence in Nanoscience, Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China.
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22
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Su M, Huang Z, Li Y, Qian X, Li Z, Hu X, Pan Q, Li F, Li L, Song Y. A 3D Self-Shaping Strategy for Nanoresolution Multicomponent Architectures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1703963. [PMID: 29205537 DOI: 10.1002/adma.201703963] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2017] [Revised: 09/22/2017] [Indexed: 06/07/2023]
Abstract
3D printing or fabrication pursues the essential surface behavior manipulation of droplets or a liquid for rapidly and precisely constructing 3D multimaterial architectures. Further development of 3D fabrication desires a self-shaping strategy that can heterogeneously integrate functional materials with disparate electrical or optical properties. Here, a 3D liquid self-shaping strategy is reported for rapidly patterning materials over a series of compositions and accurately achieving micro- and nanoscale structures. The predesigned template selectively pins the droplet, and the surface energy minimization drives the self-shaping processing. The as-prepared 3D circuits assembled by silver nanoparticles carry a current of 208-448 µA at 0.01 V impressed voltage, while the 3D architectures achieved by two different quantum dots show noninterfering optical properties with feature resolution below 3 µm. This strategy can facilely fabricate micro-nanogeometric patterns without a modeling program, which will be of great significance for the development of 3D functional devices.
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Affiliation(s)
- Meng Su
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhandong Huang
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yifan Li
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xin Qian
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zheng Li
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiaotian Hu
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qi Pan
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fengyu Li
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
| | - Lihong Li
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
| | - Yanlin Song
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
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23
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Kumar A, Kundu S, Samantaray D, Kundu P, Zanaga D, Bals S, Ravishankar N. Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting. NANO LETTERS 2017; 17:7226-7233. [PMID: 29185765 DOI: 10.1021/acs.nanolett.7b02442] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.
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Affiliation(s)
- Abinash Kumar
- Materials Research Centre, Indian Institute of Science , Bangalore 560012, India
| | - Subhajit Kundu
- Materials Research Centre, Indian Institute of Science , Bangalore 560012, India
| | | | - Paromita Kundu
- Electron Microscopy for Materials Science (EMAT), University of Antwerp , Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Daniele Zanaga
- Electron Microscopy for Materials Science (EMAT), University of Antwerp , Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Sara Bals
- Electron Microscopy for Materials Science (EMAT), University of Antwerp , Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - N Ravishankar
- Materials Research Centre, Indian Institute of Science , Bangalore 560012, India
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24
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Sun Z, Tzaguy A, Hazut O, Lauhon LJ, Yerushalmi R, Seidman DN. 1-D Metal Nanobead Arrays within Encapsulated Nanowires via a Red-Ox-Induced Dewetting: Mechanism Study by Atom-Probe Tomography. NANO LETTERS 2017; 17:7478-7486. [PMID: 29116798 DOI: 10.1021/acs.nanolett.7b03391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Metal nanoparticle arrays are excellent candidates for a variety of applications due to the versatility of their morphology and structure at the nanoscale. Bottom-up self-assembly of metal nanoparticles provides an important complementary alternative to the traditional top-down lithography method and makes it possible to assemble structures with higher-order complexity, for example, nanospheres, nanocubes, and core-shell nanostructures. Here we present a mechanism study of the self-assembly process of 1-D noble metal nanoparticles arrays, composed of Au, Ag, and AuAg alloy nanoparticles. These are prepared within an encapsulated germanium nanowire, obtained by the oxidation of a metal-germanium nanowire hybrid structure. The resulting structure is a 1-D array of equidistant metal nanoparticles with the same diameter, the so-called nanobead (NB) array structure. Atom-probe tomography and transmission electron microscopy were utilized to investigate the details of the morphological and chemical evolution during the oxidation of the encapsulated metal-germanium nanowire hybrid-structures. The self-assembly of nanoparticles relies on the formation of a metal-germanium liquid alloy and the migration of the liquid alloy into the nanowire, followed by dewetting of the liquid during shape-confined oxidation where the liquid column breaks-up into nanoparticles due to the Plateau-Rayleigh instability. Our results demonstrate that the encapsulating oxide layer serves as a structural scaffold, retaining the overall shape during the eutectic liquid formation and demonstrates the relationship between the oxide mechanical properties and the final structural characteristics of the 1-D arrays. The mechanistic details revealed here provide a versatile tool-box for the bottom-up fabrication of 1-D arrays nanopatterning that can be modified for multiple applications according to the RedOx properties of the material system components.
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Affiliation(s)
- Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Avra Tzaguy
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Ori Hazut
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Roie Yerushalmi
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - David N Seidman
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
- Northwestern University Center for Atom-Probe Tomography (NUCAPT) , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
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25
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David T, Liu K, Ronda A, Favre L, Abbarchi M, Gailhanou M, Gentile P, Buttard D, Calvo V, Amato M, Aqua JN, Berbezier I. Tailoring Strain and Morphology of Core-Shell SiGe Nanowires by Low-Temperature Ge Condensation. NANO LETTERS 2017; 17:7299-7305. [PMID: 29116815 DOI: 10.1021/acs.nanolett.7b02832] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Selective oxidation of the silicon element of silicon germanium (SiGe) alloys during thermal oxidation is a very important and technologically relevant mechanism used to fabricate a variety of microelectronic devices. We develop here a simple integrative approach involving vapor-liquid-solid (VLS) growth followed by selective oxidation steps to the construction of core-shell nanowires and higher-level ordered systems with scalable configurations. We examine the selective oxidation/condensation process under nonequilibrium conditions that gives rise to spontaneous formation of core-shell structures by germanium condensation. We contrast this strategy that uses reaction-diffusion-segregation mechanisms to produce coherently strained structures with highly configurable geometry and abrupt interfaces with growth-based processes which lead to low strained systems with nonuniform composition, three-dimensional morphology, and broad core-shell interface. We specially focus on SiGe core-shell nanowires and demonstrate that they can have up to 70% Ge-rich shell and 2% homogeneous strain with core diameter as small as 14 nm. Key elements of the building process associated with this approach are identified with regard to existing theoretical models. Moreover, starting from results of ab initio calculations, we discuss the electronic structure of these novel nanostructures as well as their wide potential for advanced device applications.
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Affiliation(s)
- Thomas David
- Aix-Marseille Université - CNRS, IM2NP, Faculté des Sciences de Jérôme , F-13397 Marseille France
| | - Kailang Liu
- Aix-Marseille Université - CNRS, IM2NP, Faculté des Sciences de Jérôme , F-13397 Marseille France
| | - Antoine Ronda
- Aix-Marseille Université - CNRS, IM2NP, Faculté des Sciences de Jérôme , F-13397 Marseille France
| | - Luc Favre
- Aix-Marseille Université - CNRS, IM2NP, Faculté des Sciences de Jérôme , F-13397 Marseille France
| | - Marco Abbarchi
- Aix-Marseille Université - CNRS, IM2NP, Faculté des Sciences de Jérôme , F-13397 Marseille France
| | - Marc Gailhanou
- Aix-Marseille Université - CNRS, IM2NP, Faculté des Sciences de Jérôme , F-13397 Marseille France
| | - Pascal Gentile
- Université Grenoble Alpes, CEA INAC-Pheliqs- SiNaPS , F-38000 Grenoble, France
| | - Denis Buttard
- Université Grenoble Alpes, CEA INAC-Pheliqs- SiNaPS , F-38000 Grenoble, France
| | - Vincent Calvo
- Université Grenoble Alpes, CEA INAC-Pheliqs- SiNaPS , F-38000 Grenoble, France
| | - Michele Amato
- Laboratoire de Physique des Solides and Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , 91405 Orsay, France
| | | | - Isabelle Berbezier
- Aix-Marseille Université - CNRS, IM2NP, Faculté des Sciences de Jérôme , F-13397 Marseille France
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26
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Choi JS, Kim KH, No YS. Spatially localized wavelength-selective absorption in morphology-modulated semiconductor nanowires. OPTICS EXPRESS 2017; 25:22750-22759. [PMID: 29041581 DOI: 10.1364/oe.25.022750] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2017] [Accepted: 09/05/2017] [Indexed: 06/07/2023]
Abstract
In this study, we proposed morphology-modulated Si nanowires (NWs) with a hexagonal cross-section and numerically investigated their resonant optical absorption and scattering properties. The calculated absorption and scattering efficiency spectra of the NWs exhibited optical resonances that could be controlled by tuning the aspect ratio (AR) of the NW cross-sectional shapes. The spectra also revealed interesting spectral behaviors including resonant peak shifts in the absorption spectrum and asymmetric line shapes in the scattering spectrum. To achieve spatially confined and wavelength-selective light absorption, we periodically modulated the geometry of the diameter in a single NW by combining two different ARs; we call these "diameter-modulated NWs." We designed various diameter-modulated NWs with short and long pitch sizes, and we observed unique and interesting features in the optical resonance and corresponding light absorption spectra such as grating modes and three-dimensional cavity modes. The proposed diameter-modulated NWs can be promising building blocks for the nanoscale localized light absorption and detection in compact nanophotonic integrated circuits.
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27
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Sun Z, Seidman DN, Lauhon LJ. Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface. NANO LETTERS 2017; 17:4518-4525. [PMID: 28658572 DOI: 10.1021/acs.nanolett.7b02071] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent ⟨112⟩ directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.
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Affiliation(s)
- Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - David N Seidman
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
- Northwestern University Center for Atom-Probe Tomography (NUCAPT) , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
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28
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Lewis RB, Corfdir P, Herranz J, Küpers H, Jahn U, Brandt O, Geelhaar L. Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant. NANO LETTERS 2017; 17:4255-4260. [PMID: 28654278 DOI: 10.1021/acs.nanolett.7b01185] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Surface energies play a dominant role in the self-assembly of three-dimensional (3D) nanostructures. In this Letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enabling the synthesis of novel hierarchical nanostructures. We explore Bi as a surfactant in the growth of InAs on the {11̅0} sidewall facets of GaAs nanowires. The presence of surface Bi induces the formation of InAs 3D islands by a process resembling the Stranski-Krastanov mechanism, which does not occur in the absence of Bi on these surfaces. The InAs 3D islands nucleate at the corners of the {11̅0} facets above a critical shell thickness and then elongate along ⟨110⟩ directions in the plane of the nanowire sidewalls. Exploiting this growth mechanism, we realize a series of novel hierarchical nanostructures, ranging from InAs quantum dots on single {11̅0} nanowire facets to zigzag-shaped nanorings completely encircling nanowire cores. Photoluminescence spectroscopy and cathodoluminescence spectral line scans reveal that small surfactant-induced InAs 3D islands behave as optically active quantum dots. This work illustrates how surfactants can provide an unprecedented level of external control over nanostructure self-assembly.
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Affiliation(s)
- Ryan B Lewis
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Pierre Corfdir
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Jesús Herranz
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Uwe Jahn
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Oliver Brandt
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
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29
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Wang Y, He J, Mu X, Wang D, Zhang B, Shen Y, Lin M, Kübel C, Huang Y, Chen H. Solution Growth of Ultralong Gold Nanohelices. ACS NANO 2017; 11:5538-5546. [PMID: 28587454 DOI: 10.1021/acsnano.7b00710] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Metallic nanohelices are extremely rare and, to date, have never been synthesized by a direct solution method. In this work, we report ultralong Au nanohelices grown in solution under ambient conditions. They are ultralong with several tens of micrometers in length, with extraordinary aspect ratio (length/diameter greater than 22 300) and the number of pitches (more than 22 000 pitches). The pitch and width are uniform within each helix but vary widely among the helices. Crystal analyses showed that the facets, twin boundaries, grain sizes, and orientations are aperiodic along the helices. The apparent smooth curving is only possible with a large number of surface steps, suggesting that these structural features are the mere consequence of the helix formation rather than the cause. We propose that the nanowires are formed by the active surface growth mechanism and that the helicity originates from the random and asymmetrical blocking of nuclei embedded within the floccules of ligand complexes, in the form of either asymmetric binding of ligands or asymmetric diffusion of growth materials through the floccules. The separate growth environment of these nuclei causes constant helicity within each helix but differing helicity among the individuals. The embedding also provides a robust environment for the sustained growth of the nanohelices, leading to their record length and consistency.
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Affiliation(s)
- Yong Wang
- Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371 Singapore
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research) , #08-03, 2 Fusionopolis Way, Innovis, 138634 Singapore
| | - Jiating He
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research) , #08-03, 2 Fusionopolis Way, Innovis, 138634 Singapore
| | - Xiaoke Mu
- Institute of Nanotechnology and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology , Karlsruhe 76021, Germany
| | - Di Wang
- Institute of Nanotechnology and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology , Karlsruhe 76021, Germany
| | - Bowei Zhang
- School of Materials Science and Engineering, Nanyang Technological University , 639798 Singapore
| | - Youde Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371 Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research) , #08-03, 2 Fusionopolis Way, Innovis, 138634 Singapore
| | - Christian Kübel
- Institute of Nanotechnology and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology , Karlsruhe 76021, Germany
| | - Yizhong Huang
- School of Materials Science and Engineering, Nanyang Technological University , 639798 Singapore
| | - Hongyu Chen
- Institute of Advanced Synthesis (IAS), School of Chemistry and Molecular Engineering, Jiangsu National Synergetic Innovation Centre for Advanced Materials, Nanjing Tech University , Nanjing 211816, P.R. China
- Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371 Singapore
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30
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Lachman N, Stein IY, Ugur A, Lidston DL, Gleason KK, Wardle BL. Synthesis of polymer bead nano-necklaces on aligned carbon nanotube scaffolds. NANOTECHNOLOGY 2017; 28:24LT01. [PMID: 28485304 DOI: 10.1088/1361-6528/aa71c5] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here, we report the fabrication of aligned carbon nanotube (A-CNT)/conducting polymer (CP) heterostructures with both uniform conformal and periodic beaded polymer morphologies via oxidative chemical vapor deposition of poly(ethylenedioxythiophene). Periodic beaded CP morphologies are realized utilizing the Plateau-Rayleigh instability to transform the original uniform conformal film, yielding a beaded CP morphology with a >50% enhancement in specific surface area (SSA). Modeling indicates that this SSA increase originates from the internal volume of the A-CNTs becoming available for adsorption, and that these internal A-CNT surfaces, if they could be made accessible to electrolyte ions, could lead to >30% enhancement of specific gravimetric and volumetric capacitances of current state-of-the-art A-CNT/CP heterostructures.
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Affiliation(s)
- Noa Lachman
- Department of Aeronautics and Astronautics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America. Department of Materials Science and Engineering, Tel Aviv University, Tel Aviv 69978, Israel
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31
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Liao X, Xiao J, Ni Y, Li C, Chen X. Self-Assembly of Islands on Spherical Substrates by Surface Instability. ACS NANO 2017; 11:2611-2617. [PMID: 28273417 DOI: 10.1021/acsnano.6b07108] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Through strain-induced morphological instability, protruding patterns of roughly commensurate nanostructures are self-assembled on the surface of spherical core/shell systems. A three-dimensional (3D) phase field model is established for a closed substrate. We investigate both numerically and analytically the kinetics of the morphological evolution, from grooves to separated islands, which are sensitive to substrate curvature, misfit strain, and modulus ratio between the core and shell. The faster growth rate of surface undulation is associated with the core/shell system of a harder substrate, larger radius, or misfit strain. On the basis of a Ag core/SiO2 shell system, the self-assemblies of SiO2 nanoislands were explored experimentally. The numerical and experimental studies herein could guide the fabrication of ordered quantum structures via surface instability on closed and curved substrates.
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Affiliation(s)
| | | | - Yong Ni
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China , Hefei 230026, China
| | - Chaorong Li
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
| | - Xi Chen
- School of Chemical Engineering, Northwest University , Xi'an 710069, China
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32
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Lewis RB, Nicolai L, Küpers H, Ramsteiner M, Trampert A, Geelhaar L. Anomalous Strain Relaxation in Core-Shell Nanowire Heterostructures via Simultaneous Coherent and Incoherent Growth. NANO LETTERS 2017; 17:136-142. [PMID: 28001430 DOI: 10.1021/acs.nanolett.6b03681] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nanoscale substrates such as nanowires allow heterostructure design to venture well beyond the narrow lattice mismatch range restricting planar heterostructures, owing to misfit strain relaxing at the free surfaces and partitioning throughout the entire nanostructure. In this work, we uncover a novel strain relaxation process in GaAs/InxGa1-xAs core-shell nanowires that is a direct result of the nanofaceted nature of these nanostructures. Above a critical lattice mismatch, plastically relaxed mounds form at the edges of the nanowire sidewall facets. The relaxed mounds and a coherent shell grow simultaneously from the beginning of the deposition with higher lattice mismatches increasingly favoring incoherent mound growth. This is in stark contrast to Stranski-Krastanov growth, where above a critical thickness coherent layer growth no longer occurs. This study highlights how understanding strain relaxation in lattice mismatched nanofaceted heterostructures is essential for designing devices based on these nanostructures.
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Affiliation(s)
- Ryan B Lewis
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lars Nicolai
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Manfred Ramsteiner
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Achim Trampert
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
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33
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Alonso-Orts M, Sánchez AM, Hindmarsh SA, López I, Nogales E, Piqueras J, Méndez B. Shape Engineering Driven by Selective Growth of SnO 2 on Doped Ga 2O 3 Nanowires. NANO LETTERS 2017; 17:515-522. [PMID: 28001409 DOI: 10.1021/acs.nanolett.6b04189] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO2/Ga2O3 complex nanostructures. Ga2O3 nanowires decorated with either crossing SnO2 nanowires or SnO2 particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga2O3 nanowires. Ga2O3 nanowires grown along the [001] direction favor the formation of crossing SnO2 nanowires. Alternatively, SnO2 forms rhombohedral particles on [110] Ga2O3 nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor-solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga2O3 acted as substrates, [110] Ga2O3 nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga2O3 axis and SnO2 particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga2O3 nanowires, growing along the [001], with crossing SnO2 wires. The SnO2/Ga2O3 junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO2 on its particular shape. Orange emission dominates in SnO2/Ga2O3 crossing wires while green-blue emission is observed in SnO2 particles attached to Ga2O3 trunks. The results show that the Ga2O3-SnO2 system appears to be a benchmark for shape engineering to get architectures involving nanowires via the control of the growth direction of the nanowires.
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Affiliation(s)
- Manuel Alonso-Orts
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Ana M Sánchez
- Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom
| | - Steven A Hindmarsh
- Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom
| | - Iñaki López
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Emilio Nogales
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Javier Piqueras
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Bianchi Méndez
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
- Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom
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34
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Xue Z, Xu M, Zhao Y, Wang J, Jiang X, Yu L, Wang J, Xu J, Shi Y, Chen K, Roca I Cabarrocas P. Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation. Nat Commun 2016; 7:12836. [PMID: 27682161 PMCID: PMC5056411 DOI: 10.1038/ncomms12836] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2016] [Accepted: 08/05/2016] [Indexed: 12/15/2022] Open
Abstract
The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has been fundamental to explore new phononic and electronic functionalities. We here exploit a nanoscale locomotion of metal droplets to demonstrate a large and readily controllable morphology engineering of crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature <350 °C. This has been accomplished via a tin (Sn) droplet mediated in-plane growth where amorphous Si thin film is consumed as precursor to produce crystalline SiNWs. Thanks to a significant interface-stretching effect, a periodic Plateau-Rayleigh instability oscillation can be stimulated in the liquid Sn droplet, and the temporal oscillation of the Sn droplets is translated faithfully, via the deformable liquid/solid deposition interface, into regular spatial modulation upon the SiNWs. Combined with a unique self-alignment and positioning capability, this new strategy could enable a rational design and single-run fabrication of a wide variety of nanowire-based optoelectronic devices. The ability to program periodic morphology into nanowires affords control over photonic and electronic transport properties. Here, the authors stimulate Plateau-Rayleigh transformations in silicon nanowires through an oscillating catalyst droplet, resulting in nanowires with island-chain morphology.
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Affiliation(s)
- Zhaoguo Xue
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Mingkun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yaolong Zhao
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jimmy Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiaofan Jiang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.,LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau, France
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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