1
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Zojer E. Electrostatically Designing Materials and Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406178. [PMID: 39194368 DOI: 10.1002/adma.202406178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 07/08/2024] [Indexed: 08/29/2024]
Abstract
Collective electrostatic effects arise from the superposition of electrostatic potentials of periodically arranged (di)polar entities and are known to crucially impact the electronic structures of hybrid interfaces. Here, it is discussed, how they can be used outside the beaten paths of materials design for realizing systems with advanced and sometimes unprecedented properties. The versatility of the approach is demonstrated by applying electrostatic design not only to metal-organic interfaces and adsorbed (complex) monolayers, but also to inter-layer interfaces in van der Waals heterostructures, to polar metal-organic frameworks (MOFs), and to the cylindrical pores of covalent organic frameworks (COFs). The presented design ideas are straightforward to simulate and especially for metal-organic interfaces also their experimental implementation has been amply demonstrated. For van der Waals heterostructures, the needed building blocks are available, while the required assembly approaches are just being developed. Conversely, for MOFs the necessary growth techniques exist, but more work on advanced linker molecules is required. Finally, COF structures exist that contain pores decorated with polar groups, but the electrostatic impact of these groups has been largely ignored so far. All this suggest that the dawn of the age of electrostatic design is currently experienced with potential breakthroughs lying ahead.
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Affiliation(s)
- Egbert Zojer
- Institute of Solid State Physics, NAWI Graz, Petersgasse 16, Graz, A-8010, Austria
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2
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Palekar CC, Rosa B, Heermeier N, Shih CW, Limame I, Koulas-Simos A, Rahimi-Iman A, Reitzenstein S. Enhancement of Interlayer Exciton Emission in a TMDC Heterostructure via a Multi-Resonant Chirped Microresonator Upto Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402624. [PMID: 39007260 DOI: 10.1002/adma.202402624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 07/02/2024] [Indexed: 07/16/2024]
Abstract
We report on multi-resonance chirped distributed Bragg reflector (DBR) microcavities. These systems are employed to investigate the light-mater interaction with both intra- and inter-layer excitons of transition metal dichalcogenide (TMDC) bilayer heterostructures. The chirped DBRs consisting of SiO2 and Si3N4 layers of gradually varying thickness exhibit a broad stopband with a width exceeding 600 nm. Importantly, the structures provide multiple resonances across a broad spectral range, which can be matched to resonances of the embedded TMDC heterostructures. Studying cavity-coupled emission of both intra- and inter-layer excitons from an integrated WSe2/MoSe2 heterostructure in a chirped microcavity system, an enhanced interlayer exciton emission with a Purcell factor of 6.67 ± 1.02 at 4 K is observed. The cavity-enhanced emission of the interlayer exciton is used to investigate its temperature-dependent luminescence lifetime of 60 ps at room temperature. The cavity system modestly suppresses intralayer exciton emission by intentional detuning, thereby promoting a higher IX population and enhancing cavity-coupled interlayer exciton emission. This approach provides an intriguing platform for future studies of energetically distant and confined excitons in different semiconducting materials, which paves the way for various applications such as microlasers and single-photon sources by enabling precise emission control and utilizing multimode resonance light-matter interaction.
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Affiliation(s)
- Chirag C Palekar
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Barbara Rosa
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Niels Heermeier
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Ching-Wen Shih
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Imad Limame
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Aris Koulas-Simos
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Arash Rahimi-Iman
- I. Physikalisches Institut and Center for Materials Research, Justus-Liebig-Universität Gießen, 35392, Gießen, Germany
| | - Stephan Reitzenstein
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
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3
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Liu M, Lu Y, Song J, Ma B, Qiu K, Bai L, Wang Y, Chen Y, Tang Y. First-Principles Investigation on the Tunable Electronic Structures and Photocatalytic Properties of AlN/Sc 2CF 2 and GaN/Sc 2CF 2 Heterostructures. Molecules 2024; 29:3303. [PMID: 39064882 PMCID: PMC11279752 DOI: 10.3390/molecules29143303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2024] [Revised: 07/05/2024] [Accepted: 07/11/2024] [Indexed: 07/28/2024] Open
Abstract
Heterostructure catalysts are highly anticipated in the field of photocatalytic water splitting. AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are proposed in this work, and the electronic structures were revealed with the first-principles method to explore their photocatalytic properties for water splitting. The results found that the thermodynamically stable AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are indirect semiconductors with reduced band gaps of 1.75 eV and 1.84 eV, respectively. These two heterostructures have been confirmed to have type-Ⅰ band alignments, with both VBM and CBM contributed to by the Sc2CF2 layer. AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures exhibit the potential for photocatalytic water splitting as their VBM and CBM stride over the redox potential of water. Gibbs free energy changes in HER occurring on AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are as low as -0.31 eV and -0.59 eV, respectively. The Gibbs free energy change in HER on the AlN (GaN) layer is much lower than that on the Sc2CF2 surface, owing to the stronger adsorption of H on AlN (GaN). The AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures possess significant improvements in absorption range and intensity compared to monolayered AlN, GaN, and Sc2CF2. In addition, the band gaps, edge positions, and absorption properties of AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures can be effectively tuned with strains. All the results indicate that AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are suitable catalysts for photocatalytic water splitting.
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Affiliation(s)
- Meiping Liu
- School of Intelligent Manufacturing, Huanghuai University, Zhumadian 463000, China
| | - Yidan Lu
- Henan Key Laboratory of Smart Lighting, School of Energy Engineering, Huanghuai University, Zhumadian 463000, China
| | - Jun Song
- Henan Key Laboratory of Smart Lighting, School of Energy Engineering, Huanghuai University, Zhumadian 463000, China
| | - Benyuan Ma
- Henan Key Laboratory of Smart Lighting, School of Energy Engineering, Huanghuai University, Zhumadian 463000, China
| | - Kangwen Qiu
- Henan Key Laboratory of Smart Lighting, School of Energy Engineering, Huanghuai University, Zhumadian 463000, China
| | - Liuyang Bai
- Henan Key Laboratory of Smart Lighting, School of Energy Engineering, Huanghuai University, Zhumadian 463000, China
| | - Yinling Wang
- Henan Key Laboratory of Smart Lighting, School of Energy Engineering, Huanghuai University, Zhumadian 463000, China
| | - Yuanyuan Chen
- Polymer, Recycling, Industrial, Sustainability and Manufacturing (PRISM), Technological University of the Shannon: Midlands Midwest, N37 HD68 Athlone, Ireland
| | - Yong Tang
- Henan Key Laboratory of Smart Lighting, School of Energy Engineering, Huanghuai University, Zhumadian 463000, China
- Polymer, Recycling, Industrial, Sustainability and Manufacturing (PRISM), Technological University of the Shannon: Midlands Midwest, N37 HD68 Athlone, Ireland
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4
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Ge A, Ge X, Sun L, Lu X, Ma L, Zhao X, Yao B, Zhang X, Zhang T, Jing W, Zhou X, Shen X, Lu W. Unraveling the strain tuning mechanism of interlayer excitons in WSe 2/MoSe 2heterostructure. NANOTECHNOLOGY 2024; 35:175207. [PMID: 38266306 DOI: 10.1088/1361-6528/ad2232] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 01/23/2024] [Indexed: 01/26/2024]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (μ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.
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Affiliation(s)
- Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Liaoxin Sun
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xinle Lu
- Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Lei Ma
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Xinchao Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Bimu Yao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- Department of Physics, Shanghai Normal University, Shanghai, 200234, People's Republic of China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Wenji Jing
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Xuechu Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
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5
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Hu J, Yu L, Chen X, Lee W, Mate CM, Heinz TF. Moiré-Assisted Strain Transfer in Vertical van der Waals Heterostructures. NANO LETTERS 2023; 23:10051-10057. [PMID: 37903015 DOI: 10.1021/acs.nanolett.3c03388] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2023]
Abstract
Strain provides a powerful method to study 2D monolayers and to tune their properties. The same approach also has great potential for van-der-Waals (vdW) heterostructures. However, we need to understand how strain can be applied to vertically stacked vdW structures, for which strain transfer from one layer to the next remains little explored. In our experiment, we fabricated vertical heterostructures consisting of transition metal dichalcogenides (TMDCs) monolayers that were deposited on a flexible substrate. These TMDC heterostructures allowed us to read out separately the strain in each monolayer by photoluminescence measurements. We find that, in TMDC heterostructures with large twist angles (>5°), strain transfer is limited. However, for aligned heterostructures with small twist angles (≤5°), near unity strain transfer efficiency is observed. We correlate this finding with the moiré domains formed in the aligned heterostructures by reconstruction.
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Affiliation(s)
- Jenny Hu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Leo Yu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Xueqi Chen
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Wanhee Lee
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - C Mathew Mate
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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6
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Xia R, Peng Y, Fang L, Meng X. Electrical field and biaxial strain tunable electronic properties of the PtSe 2/Hf 2CO 2 heterostructure. RSC Adv 2023; 13:26812-26821. [PMID: 37701500 PMCID: PMC10495041 DOI: 10.1039/d3ra04363k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 08/09/2023] [Indexed: 09/14/2023] Open
Abstract
The structure and electronic properties of two-dimensional vertical van der Waals PtSe2/Hf2CO2 heterostructure have been investigated based on first-principles calculations. The results show that the PtSe2 and Hf2CO2 monolayers form a type-I heterostructure with both the conduction band minimum (CBM) and valence band maximum (VBM) located at the Hf2CO2 layer. The electronic properties of PtSe2/Hf2CO2 heterostructure can be effectively adjusted by applying external electric field or biaxial strain. The transition in band alignment from type-I to type-II can be manipulated by controlling the strength and direction of the electric field. Additionally, the transition from type-I to type-II have also taken place under the strains, and the band gap of the PtSe2/Hf2CO2 heterostructure decreases with increasing the compressive or tensible strain. Under a strong strain of -8%, the PtSe2/Hf2CO2 heterostructure can transform from semiconductor to metal. These findings provide a promising method to tune the electronic properties of PtSe2/Hf2CO2 heterostructure and design a new vdW heterostructure in the applications for electronic and optoelectronic devices.
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Affiliation(s)
- Ruizhe Xia
- School of Science, Hubei University of Technology Wuhan 430068 P. R. China
| | - Yi Peng
- School of Science, Hubei University of Technology Wuhan 430068 P. R. China
| | - Li Fang
- School of Science, Hubei University of Technology Wuhan 430068 P. R. China
| | - Xuan Meng
- School of Science, Hubei University of Technology Wuhan 430068 P. R. China
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7
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Wen H, Zhang H, Peng R, Liu C, Liu S, Liu F, Xie H, Liu Z. 3D Strain Measurement of Heterostructures Using the Scanning Transmission Electron Microscopy Moiré Depth Sectioning Method. SMALL METHODS 2023; 7:e2300107. [PMID: 37300326 DOI: 10.1002/smtd.202300107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2023] [Revised: 05/03/2023] [Indexed: 06/12/2023]
Abstract
The mechanical properties of micro- and nanoscale materials directly determine the reliability of heterostructures, microstructures, and microdevices. Therefore, an accurate evaluation of the 3D strain field at the nanoscale is important. In this study, a scanning transmission electron microscopy (STEM) moiré depth sectioning method is proposed. By optimizing the scanning parameters of electron probes at different depths of the material, the sequence STEM moiré fringes (STEM-MFs) with a large field of view, which can be hundreds of nanometers obtained. Then, the 3D STEM moiré information constructed. To some extent, multi-scale 3D strain field measurements from nanometer to the submicrometer scale actualized. The 3D strain field near the heterostructure interface and single dislocation accurately measured by the developed method.
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Affiliation(s)
- Huihui Wen
- School of Electrical Engineering, Hebei University of Science and Technology, Shijiazhuang, 050018, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Hongye Zhang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
- School of Technology, Beijing Forestry University, Beijing, 100083, China
| | - Runlai Peng
- School of Technology, Beijing Forestry University, Beijing, 100083, China
| | - Chao Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Shuman Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Fengqi Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Huimin Xie
- AML, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, China
| | - Zhanwei Liu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
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8
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Jin W, Pang J, Yue L, Xie M, Kuang X, Lu C. Multifunctional PbS 2 Monolayer with an In-Plane Negative Poisson Ratio and Photocatalytic Water Splitting Properties. J Phys Chem Lett 2022; 13:10494-10499. [PMID: 36326679 DOI: 10.1021/acs.jpclett.2c02760] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Designing novel multifunctional materials at the nanoscale is vitally important for flexible electronics. Here, we have uncovered a two-dimensional metal dichalcogenide PbS2 with intriguing negative Poisson ratio behavior and favorable optical and photocatalytic water splitting properties. The calculations indicate that the Poisson ratio of the PbS2 monolayer is -0.061 along both x and y lattice directions, which is attributed to its unique tetrahedral motif and the ligand field of the local PbS4 units in the PbS2 monolayer. The electronic band structures show that the narrow band gap (1.59 eV) of the PbS2 monolayer could be effectively modulated by strain engineering. Most importantly, the strain-induced tunability of optical absorbance and suitable band edge alignment make the PbS2 monolayer a promising catalyst for photocatalytic water splitting, which is further confirmed by the reaction free energies. These findings offer an effective avenue for the design and synthesis of a novel optoelectronic functional material.
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Affiliation(s)
- Wenyuan Jin
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu610065, China
| | - Jiafei Pang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu610065, China
| | - Ling Yue
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu610065, China
| | - Menghua Xie
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu610065, China
| | - Xiaoyu Kuang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu610065, China
| | - Cheng Lu
- School of Mathematics and Physics, China University of Geosciences (Wuhan), Wuhan430074, China
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9
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Zhang X, Zhang Y, Yu H, Zhao H, Cao Z, Zhang Z, Zhang Y. Van der Waals-Interface-Dominated All-2D Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2207966. [PMID: 36353883 DOI: 10.1002/adma.202207966] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 11/06/2022] [Indexed: 06/16/2023]
Abstract
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yanzhe Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Hang Zhao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhihong Cao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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10
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Recent Progress in Fabrication and Physical Properties of 2D TMDC-Based Multilayered Vertical Heterostructures. ELECTRONICS 2022. [DOI: 10.3390/electronics11152401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Two-dimensional (2D) vertical heterojunctions (HSs), which are usually fabricated by vertically stacking two layers of transition metal dichalcogenide (TMDC), have been intensively researched during the past years. However, it is still an enormous challenge to achieve controllable preparation of the TMDC trilayer or multilayered van der Waals (vdWs) HSs, which have important effects on physical properties and device performance. In this review, we will introduce fundamental features and various fabrication methods of diverse TMDC-based multilayered vdWs HSs. This review focuses on four fabrication methods of TMDC-based multilayered vdWs HSs, such as exfoliation, chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). The latest progress in vdWs HS-related novel physical phenomena are summarized, including interlayer excitons, long photocarrier lifetimes, upconversion photoluminescence, and improved photoelectrochemical catalysis. At last, current challenges and prospects in this research field are provided.
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11
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Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
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Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
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12
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Deng JP, Li HJ, Ma XF, Liu XY, Cui Y, Ma XJ, Li ZQ, Wang ZW. Self-Trapped Interlayer Excitons in van der Waals Heterostructures. J Phys Chem Lett 2022; 13:3732-3739. [PMID: 35445599 DOI: 10.1021/acs.jpclett.2c00565] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The self-trapped state (STS) of the interlayer exciton (IX) has aroused enormous interest owing to its significant impact on the fundamental properties of the van der Waals heterostructures (vdWHs). Nevertheless, the microscopic mechanisms of STS are still controversial. Herein, we study the corrections of the binding energies of the IXs stemming from the exciton-interface optical phonon coupling in four kinds of vdWHs and find that these IXs are in the STS for the appropriate ratio of the electron and hole effective masses. We show that these self-trapped IXs could be classified into type I with the increasing binding energy in the tens of millielectronvolts range, which are very agreement with the red-shift of the IX spectra in experiments, and type II with the decreasing binding energy, which provides a possible explanation for the blue-shift and broad line width of the IX's spectra at low temperatures. Moreover, these two types of exciton states could be transformed into each other by adjusting the structural parameters of vdWHs. These results not only provide an in-depth understanding for the self-trapped mechanism but also shed light on the modulations of IXs in vdWHs.
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Affiliation(s)
- Jia-Pei Deng
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Hong-Juan Li
- College of Physics and Intelligent Manufacturing Engineering, Chifeng University, Chifeng 024000, Inner Mongolia, China
| | - Xu-Fei Ma
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Xiao-Yi Liu
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Yu Cui
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Xin-Jun Ma
- Research Team of Extreme Condition Physics, College of Mathematics and Physics, Inner Mongolia Minzu University, Tongliao 028043, Inner Mongolia, China
| | - Zhi-Qing Li
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Zi-Wu Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
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13
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Wu X, Chen X, Yang R, Zhan J, Ren Y, Li K. Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105877. [PMID: 35044721 DOI: 10.1002/smll.202105877] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 11/25/2021] [Indexed: 06/14/2023]
Abstract
2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as-synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state-of-the-art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical-based, external fields-assisted, and particle beam irradiation-based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Jianbin Zhan
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Yingzhi Ren
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Kun Li
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
- Chongqing Key Laboratory of Metal Additive Manufacturing (3D Printing), Chongqing University, Chongqing, 400044, China
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14
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Han Y, Gao L, Zhou J, Hou Y, Jia Y, Cao K, Duan K, Lu Y. Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8655-8663. [PMID: 35147415 DOI: 10.1021/acsami.1c23431] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Conventionally, tuning materials' properties can be done through strategies such as alloying, doping, defect engineering, and phase engineering, while in fact mechanical straining can be another effective approach. In particular, elastic strain engineering (ESE), unlike conventional strain engineering mainly based on epitaxial growth, allows for continuous and reversible modulation of material properties by mechanical loading/unloading. The exceptional intrinsic mechanical properties (including elasticity and strength) of two-dimensional (2D) materials make them naturally attractive candidates for potential ESE applications. Here, we demonstrated that using the strain effect to modulate the physical and chemical properties toward novel functional device applications, which could be a general strategy for various 2D materials and their heterostructures. We then show how ultralarge, uniform elastic strain in free-standing 2D monolayers can permit deep elastic strain engineering (DESE), which can result in fundamentally changed electronic and optoelectronic properties for unconventional device applications. In addition to monolayers and van der Waals (vdW) heterostructures, we propose that DESE can be also applied to twisted bilayer graphene and other emerging twisted vdW structures, allowing for unprecedented functional 2D material applications.
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Affiliation(s)
- Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China
| | - Libo Gao
- School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China
- CityU-Xidian Joint Laboratory of Micro/Nano-Manufacturing, Shenzhen Research Institute of City University of Hong Kong, Shenzhen 518057, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China
| | - Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China
| | - Yanwen Jia
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Ke Cao
- School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China
- CityU-Xidian Joint Laboratory of Micro/Nano-Manufacturing, Shenzhen Research Institute of City University of Hong Kong, Shenzhen 518057, China
| | - Ke Duan
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China
- CityU-Xidian Joint Laboratory of Micro/Nano-Manufacturing, Shenzhen Research Institute of City University of Hong Kong, Shenzhen 518057, China
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
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15
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Xu X, Wang C, Xiong W, Liu Y, Yang D, Zhang X, Xu J. Strain regulated interlayer coupling in WSe 2/WS 2heterobilayer. NANOTECHNOLOGY 2021; 33:085705. [PMID: 34787100 DOI: 10.1088/1361-6528/ac3a39] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2021] [Accepted: 11/15/2021] [Indexed: 06/13/2023]
Abstract
Strain engineering can effectively modify the materials lattice parameters at atomic scale, hence it has become an efficient method for tuning the physical properties of two-dimensional (2D) materials. The study of the strain regulated interlayer coupling is deserved for different kinds of heterostructures. Here, we systematically studied the strain engineering of WSe2/WS2heterostructures as well as their constituent monolayers. The measured Raman and photoluminescence spectra demonstrate that the strain can evidently modulate the phonon energy and exciton emission of monolayer WSe2and WS2as well as the WSe2/WS2heterostructures. The tensile strain can tune the electronic band structure of WSe2/WS2heterostructure, as well as enhance the interlayer coupling. It is further revealed that the photoluminescence intensity ratio of WS2to WSe2in our WSe2/WS2heterobilayer increases monotonically with tensile strain. These findings can broaden the understanding and practical application of strain engineering in 2D materials with nanometer-scale resolution.
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Affiliation(s)
- Xiaodan Xu
- Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
- The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, People's Republic of China
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Wenqi Xiong
- School of Physics and Technology, Wuhan University, Wuhan 430070, People's Republic of China
| | - Yang Liu
- The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, People's Republic of China
| | - Donghao Yang
- The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, People's Republic of China
| | - Xinzheng Zhang
- The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, People's Republic of China
| | - Jingjun Xu
- The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, People's Republic of China
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16
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Meng L, Huang Q, Liu C, Li H, Yan W, Zhao Q, Yan X. Robust type-II BP/AlN van der Waals heterostructure: A first-principles study. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.138989] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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17
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Muscher PK, Rehn DA, Sood A, Lim K, Luo D, Shen X, Zajac M, Lu F, Mehta A, Li Y, Wang X, Reed EJ, Chueh WC, Lindenberg AM. Highly Efficient Uniaxial In-Plane Stretching of a 2D Material via Ion Insertion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101875. [PMID: 34331368 DOI: 10.1002/adma.202101875] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 05/27/2021] [Indexed: 06/13/2023]
Abstract
On-chip dynamic strain engineering requires efficient micro-actuators that can generate large in-plane strains. Inorganic electrochemical actuators are unique in that they are driven by low voltages (≈1 V) and produce considerable strains (≈1%). However, actuation speed and efficiency are limited by mass transport of ions. Minimizing the number of ions required to actuate is thus key to enabling useful "straintronic" devices. Here, it is shown that the electrochemical intercalation of exceptionally few lithium ions into WTe2 causes large anisotropic in-plane strain: 5% in one in-plane direction and 0.1% in the other. This efficient stretching of the 2D WTe2 layers contrasts to intercalation-induced strains in related materials which are predominantly in the out-of-plane direction. The unusual actuation of Lix WTe2 is linked to the formation of a newly discovered crystallographic phase, referred to as Td', with an exotic atomic arrangement. On-chip low-voltage (<0.2 V) control is demonstrated over the transition to the novel phase and its composition. Within the Td'-Li0.5- δ WTe2 phase, a uniaxial in-plane strain of 1.4% is achieved with a change of δ of only 0.075. This makes the in-plane chemical expansion coefficient of Td'-Li0.5-δ WTe2 far greater than of any other single-phase material, enabling fast and efficient planar electrochemical actuation.
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Affiliation(s)
- Philipp K Muscher
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Daniel A Rehn
- Computational Physics Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Aditya Sood
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Kipil Lim
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Duan Luo
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Marc Zajac
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Feiyu Lu
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Apurva Mehta
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Yiyang Li
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Evan J Reed
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - William C Chueh
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
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18
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Xue S, Chen G, Li F, Zhao Y, Zeng Q, Peng J, Shi F, Zhang W, Wang Y, Wu J, Che R. Understanding of Strain-Induced Electronic Structure Changes in Metal-Based Electrocatalysts: Using Pd@Pt Core-Shell Nanocrystals as an Ideal Platform. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100559. [PMID: 34185440 DOI: 10.1002/smll.202100559] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2021] [Revised: 04/18/2021] [Indexed: 06/13/2023]
Abstract
While metal-based electrocatalysts have garnered extensive attention owing to the large variety of enzyme-mimic properties, the search for such highly-efficient catalysts still relies on empirical explorations, owing to the lack of predictive indicators as well as the ambiguity of structure-activity relationships. Notably, surface electronic structures play a crucial role in metal-based catalysts yet remain unexplored in enzyme-mimics. Herein, the authors investigate the electronic structure as a possible indicator of electrocatalytic activities of H2 O2 decomposition and glucose oxidation using Pd@Pt core-shell nanocrystals as a well-defined platform. The electron densities of the Pd@Pt are modulated with the correlation of strain through precise control of surface orientation and the number of atomic layers. The close relationships between the electrocatalytic activities and the surface charge accumulation are found, in which the increase of the electron accumulation can enhance both the enzyme-mimic activities. As a result, the Pd@Pt3L icosahedra with compressive strain in Pt shells exhibit the highest electrocatalytic activities for H2 O2 decomposition and glucose oxidation. Such systematic and comprehensive study provides the structure-activity relationships and paves a new way for the rational design of metal-based electrocatalysts. Especially, the charge accumulation degrees may serve as a general performance indicator for metal-based catalysts.
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Affiliation(s)
- Shuyan Xue
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Fudan University, Shanghai, 200438, P. R. China
| | - Guanyu Chen
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Fudan University, Shanghai, 200438, P. R. China
| | - Fan Li
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Yunhao Zhao
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Fudan University, Shanghai, 200438, P. R. China
| | - Qingwen Zeng
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Fudan University, Shanghai, 200438, P. R. China
| | - Jiaheng Peng
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Fenglei Shi
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Wencong Zhang
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Yizhe Wang
- Materials Genome Institute, International Centre of Quantum and Molecular Structures, and Physics Department, Shanghai University, Shanghai, 200444, P. R. China
| | - Jianbo Wu
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
- Center of Hydrogen Science, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Renchao Che
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Fudan University, Shanghai, 200438, P. R. China
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19
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Nguyen C, Hoang NV, Phuc HV, Sin AY, Nguyen CV. Two-Dimensional Boron Phosphide/MoGe 2N 4 van der Waals Heterostructure: A Promising Tunable Optoelectronic Material. J Phys Chem Lett 2021; 12:5076-5084. [PMID: 34028284 DOI: 10.1021/acs.jpclett.1c01284] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A van der Waals (VDW) heterostructure offers an effective strategy to create designer physical properties in vertically stacked two-dimensional (2D) materials, and offers a new paradigm in designing novel 2D heterostructure devices. In this work, we investigate the structural and electronic features of the BP/MoGe2N4 heterostructure. We show that the BP/MoGe2N4 heterostructure exists in a multiple structurally stable stacking configuration, thus revealing the experimental feasibility of fabricating such heterostructures. Electronically, the BP/MoGe2N4 heterostructure is a direct band gap semiconductor exhibiting type-II band alignment, which is highly beneficial for the spatial separation of electrons and holes. Upon forming the BP/MoGe2N4 heterostructure, the band gap of the constituent BP and MoGe2N4 monolayers are substantially reduced, thus allowing the easier creation of an electron-hole pair at a lower excitation energy. Interestingly, both the band gap and band alignment of the BP/MoGe2N4 heterostructure can be modulated by an external electric field and a vertical strain. The optical absorption of the BP/MoGe2N4 heterostructure is enhanced in both the visible-light and ultraviolet regions, thus suggesting a strong potential for solar cell application. Our findings reveal the promising potential of the BP/MoGe2N4 vdW heterostructure in high-performance optoelectronic device applications.
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Affiliation(s)
- Cuong Nguyen
- Department of Physics, University of Education, Hue University, Hue, Vietnam
| | - Nguyen V Hoang
- Department of Materials Science and Engineering, Le Quy Don Technical University, Ha Noi 100000, Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University, Cao Lanh 870000, Vietnam
| | - Ang Yee Sin
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University, Ha Noi 100000, Vietnam
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20
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Marcellina E, Liu X, Hu Z, Fieramosca A, Huang Y, Du W, Liu S, Zhao J, Watanabe K, Taniguchi T, Xiong Q. Evidence for Moiré Trions in Twisted MoSe 2 Homobilayers. NANO LETTERS 2021; 21:4461-4468. [PMID: 33970625 DOI: 10.1021/acs.nanolett.1c01207] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Moiré superlattices of van der Waals structures offer a powerful platform for engineering band structure and quantum states. For instance, Moiré superlattices in magic-angle twisted bilayer graphene, ABC trilayer graphene have been shown to harbor correlated insulating and superconducting states, while in transition metal dichalcogenide (TMD) twisted bilayers, Moiré excitons have been identified. Here we show that the effects of a Moiré superlattice on the band structure are general: In TMD twisted bilayers, excitons and exciton complexes can be trapped in the superlattice in a manner analogous to ultracold bosonic or Fermionic atoms in optical lattices. Using twisted MoSe2 homobilayers as a model system, we present evidence for Moiré trions. Our results thus open possibilities for designer van der Waals structures hosting arrays of Fermionic or bosonic quasiparticles, which can be used to realize tunable many-body states crucial for quantum simulation and quantum information processing.
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Affiliation(s)
- Elizabeth Marcellina
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Xue Liu
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Zehua Hu
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Antonio Fieramosca
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Yuqing Huang
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Wei Du
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Sheng Liu
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Jiaxin Zhao
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P.R. China
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21
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Cho C, Wong J, Taqieddin A, Biswas S, Aluru NR, Nam S, Atwater HA. Highly Strain-Tunable Interlayer Excitons in MoS 2/WSe 2 Heterobilayers. NANO LETTERS 2021; 21:3956-3964. [PMID: 33914542 DOI: 10.1021/acs.nanolett.1c00724] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Interlayer excitons in heterobilayers of transition-metal dichalcogenides (TMDCs) have generated enormous interest due to their permanent vertical dipole moments and long lifetimes. However, the effects of mechanical strain on the optoelectronic properties of interlayer excitons in heterobilayers remain relatively uncharacterized. Here, we experimentally demonstrate strain tuning of Γ-K interlayer excitons in molybdenum disulfide and tungsten diselenide (MoS2/WSe2) wrinkled heterobilayers and obtain a deformation potential constant of ∼107 meV/% uniaxial strain, which is approximately twice that of the intralayer excitons in the constituent monolayers. We further observe a nonmonotonic dependence of the interlayer exciton photoluminescence intensity with strain, which we interpret as being due to the sensitivity of the Γ point to band hybridization arising from the competition between in-plane strain and out-of-plane interlayer coupling. Strain engineering with interlayer excitons in TMDC heterobilayers offers higher strain tunability and new degrees of freedom compared to their monolayer counterparts.
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Affiliation(s)
- Chullhee Cho
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Joeson Wong
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Amir Taqieddin
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Souvik Biswas
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Narayana R Aluru
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - SungWoo Nam
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Harry A Atwater
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States
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22
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Zhang H, Yimam DT, de Graaf S, Momand J, Vermeulen PA, Wei Y, Noheda B, Kooi BJ. Strain Relaxation in "2D/2D and 2D/3D Systems": Highly Textured Mica/Bi 2Te 3, Sb 2Te 3/Bi 2Te 3, and Bi 2Te 3/GeTe Heterostructures. ACS NANO 2021; 15:2869-2879. [PMID: 33476130 PMCID: PMC7905873 DOI: 10.1021/acsnano.0c08842] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However, recent work on heterostructures based on Bi2Te3, Sb2Te3, and GeTe showed the potential of a different type of strain engineering due to long-range mutual straining. Still, a comprehensive understanding of the strain relaxation mechanism in these telluride heterostructures is lacking due to limitations of the earlier analyses performed. Here, we present a detailed study of strain in two-dimensional (2D/2D) and mixed dimensional (2D/3D) systems derived from mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe heterostructures, respectively. We first clearly show the fast relaxation process in the mica/Bi2Te3 system where the strain was generally transferred and confined up to the second or third van der Waals block and then abruptly relaxed. Then we show, using three independent techniques, that the long-range exponentially decaying strain in GeTe and Sb2Te3 grown on the relaxed Bi2Te3 and Bi2Te3 on relaxed Sb2Te3 as directly observed at the growth surface is still present within these three different top layers a long time after growth. The observed behavior points at immediate strain relaxation by plastic deformation without any later relaxation and rules out an elastic (energy minimization) model as was proposed recently. Our work advances the understanding of strain tuning in textured heterostructures or superlattices governed by anisotropic bonding.
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23
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Jiang X, Chen F, Zhao S, Su W. Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides. CrystEngComm 2021. [DOI: 10.1039/d1ce01289d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
This review summarizes recent advances in the controllable CVD growth of 2D TMDC vertical heterostructures under four different strategies.
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Affiliation(s)
- Xia Jiang
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Fei Chen
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Shichao Zhao
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
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24
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Peng Z, Chen X, Fan Y, Srolovitz DJ, Lei D. Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications. LIGHT, SCIENCE & APPLICATIONS 2020; 9:190. [PMID: 33298826 PMCID: PMC7680797 DOI: 10.1038/s41377-020-00421-5] [Citation(s) in RCA: 90] [Impact Index Per Article: 22.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2020] [Revised: 10/10/2020] [Accepted: 10/14/2020] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ideal platform for strain engineering, enabling versatile modulation and significant enhancement of their optical properties. For instance, recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains, such as uniaxial strain and biaxial strain. Meanwhile, many nondestructive optical measurement methods, typically including absorption, reflectance, photoluminescence, and Raman spectroscopies, can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials, discussions on existing open questions, and an outlook on this intriguing emerging field.
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Affiliation(s)
- Zhiwei Peng
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Xiaolin Chen
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, 999077, China
| | - Yulong Fan
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - David J Srolovitz
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Dangyuan Lei
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China.
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25
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Alexeev EM, Mullin N, Ares P, Nevison-Andrews H, Skrypka O, Godde T, Kozikov A, Hague L, Wang Y, Novoselov KS, Fumagalli L, Hobbs JK, Tartakovskii AI. Emergence of Highly Linearly Polarized Interlayer Exciton Emission in MoSe 2/WSe 2 Heterobilayers with Transfer-Induced Layer Corrugation. ACS NANO 2020; 14:11110-11119. [PMID: 32803959 DOI: 10.1021/acsnano.0c01146] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly nonuniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force, and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe2/WSe2 heterostructures and the emergence of linearly polarized interlayer exciton photoluminescence. We attribute these changes to local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for interlayer excitons due to the strain-induced interlayer band gap reduction. Surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal variations of the local work function consistent with strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest effective approaches for interlayer exciton manipulation by local strain engineering.
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Affiliation(s)
- Evgeny M Alexeev
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Nic Mullin
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Pablo Ares
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom
| | - Harriet Nevison-Andrews
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom
| | - Oleksandr Skrypka
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Tillmann Godde
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Aleksey Kozikov
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom
| | - Lee Hague
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom
| | - Yibo Wang
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom
| | - Kostya S Novoselov
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
- Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing, 400714 China
| | - Laura Fumagalli
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom
| | - Jamie K Hobbs
- Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
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26
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Zhai X, Xu X, Peng J, Jing F, Zhang Q, Liu H, Hu Z. Enhanced Optoelectronic Performance of CVD-Grown Metal-Semiconductor NiTe 2/MoS 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:24093-24101. [PMID: 32374152 DOI: 10.1021/acsami.0c02166] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Van der Waals (vdW) heterostructures are the fundamental blocks for two-dimensional (2D) electronic and optoelectronic devices. In this work, a high-quality 2D metal-semiconductor NiTe2/MoS2 heterostructure is prepared by a two-step chemical vapor deposition (CVD) growth. The back-gated field-effect transistors (FETs) and photodetectors based on the heterostructure show enhanced electronic and optoelectronic performance than that of a pristine MoS2 monolayer, owing to the better heterointerface in the former device. Especially, this photodetector based on the metal-semiconductor heterostructure shows 3 orders faster rise time and decay time than that of the pristine MoS2 under the same fabrication procedure. The enhancement of electronic behavior and optoelectronic response by the epitaxial growth of metallic vdW layered materials can provide a new method to improve the performance of optoelectronic devices.
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Affiliation(s)
- Xiaokun Zhai
- School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China
| | - Xing Xu
- School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Jiangbo Peng
- School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China
| | - Fangli Jing
- Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, Tianjin 300384, China
- Department of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Qinglin Zhang
- School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Hongjun Liu
- School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China
- Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, Tianjin 300384, China
| | - Zhanggui Hu
- Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China
- Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, Tianjin 300384, China
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27
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Fu X, Fu X, Chen Y, Qin L, Peng H, Shi R, Li F, Zhou Q, Wang Y, Zhou Y, Ning Y. Optically Pumped Monolayer MoSe 2 Excitonic Lasers from Whispering Gallery Mode Microcavities. J Phys Chem Lett 2020; 11:541-547. [PMID: 31887063 DOI: 10.1021/acs.jpclett.9b03589] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Developing integrable, nanoscale, and low-energy-consumption lasers is a crucial step toward on-chip optical communications and computing technologies. The strong exciton-photon interaction that emerged in monolayer transition metal dichalcogenides (TMDs) holds promise for engineering and integration. Herein, we prepare the MoSe2/microsphere cavities excitonic lasers by placing SiO2 microspheres on top of a monolayer MoSe2 film. By virtue of continuous-wave exciting MoSe2/microsphere whispering gallery mode (WGM) cavities, we realize multiple excitonic WGM lasing in the emission wavelength range of ∼750-875 nm at room temperature with tunable properties of free spectral range (FSR) and full width at half-maximum (fwhm) by varying the microsphere size. Theoretical calculations based on the finite element method (FEM) using COMSOL software were utilized to identify lasing modes and reveal the corresponding electric field distribution. These findings help to deepen fundamental understanding of excitonic WGM lasing and provide a promising research platform for integrable, scalable, and low-cost laser devices.
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Affiliation(s)
- Xinpeng Fu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
| | - Xihong Fu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
| | - Yongyi Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
- Peng Cheng Laboratory , No. 2, Xingke First Street , Nanshan, 518000 Shenzhen , China
| | - Li Qin
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
| | - Hangyu Peng
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
| | - Ruixin Shi
- School and Hospital of Stomatology , Jilin University , 130021 Changchun , China
| | - Fangfei Li
- College of Physics , Jilin University , 130012 Changchun , China
| | - Qiang Zhou
- College of Physics , Jilin University , 130012 Changchun , China
| | - Yubing Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
- Peng Cheng Laboratory , No. 2, Xingke First Street , Nanshan, 518000 Shenzhen , China
| | - Yinli Zhou
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
| | - Yongqiang Ning
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
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28
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Xu W, Kozawa D, Zhou Y, Wang Y, Sheng Y, Jiang T, Strano MS, Warner JH. Controlling Photoluminescence Enhancement and Energy Transfer in WS 2 :hBN:WS 2 Vertical Stacks by Precise Interlayer Distances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1905985. [PMID: 31854047 DOI: 10.1002/smll.201905985] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2019] [Indexed: 06/10/2023]
Abstract
2D semiconducting transition metal dichalcogenides (TMDs) are endowed with fascinating optical properties especially in their monolayer limit. Insulating hBN films possessing customizable thickness can act as a separation barrier to dictate the interactions between TMDs. In this work, vertical layered heterostructures (VLHs) of WS2 :hBN:WS2 are fabricated utilizing chemical vapor deposition (CVD)-grown materials, and the optical performance is evaluated through photoluminescence (PL) spectroscopy. Apart from the prohibited indirect optical transition due to the insertion of hBN spacers, the variation in the doping level of WS2 drives energy transfer to arise from the layer with lower quantum efficiency to the other layer with higher quantum efficiency, whereby the total PL yield of the heterosystem is increased and the stack exhibits a higher PL intensity compared to the sum of those in the two WS2 constituents. Such doping effects originate from the interfaces that WS2 monolayers reside on and interact with. The electron density in the WS2 is also controlled and subsequent modulation of PL in the heterostructure is demonstrated by applying back-gated voltages. Other influential factors include the strain in WS2 and temperature. Being able to tune the energy transfer in the VLHs may expand the development of photonic applications in 2D systems.
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Affiliation(s)
- Wenshuo Xu
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
- Oxford Suzhou Centre for Advanced Research, 388 Ruoshui Road, Suzhou, 215123, Jiangsu Province, China
| | - Daichi Kozawa
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yingqiu Zhou
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Yizhi Wang
- College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China
| | - Yuewen Sheng
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Tian Jiang
- College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jamie H Warner
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
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29
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Yang G, Sun R, Gu Y, Xie F, Ding Y, Zhang X, Wang Y, Hua B, Ni X, Fan Q, Gu X. The Electronic and Optical Properties of InSe-GeTe Heterobilayer via Applying Biaxial Strain. NANOMATERIALS 2019; 9:nano9121705. [PMID: 31795272 PMCID: PMC6956121 DOI: 10.3390/nano9121705] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Revised: 11/25/2019] [Accepted: 11/26/2019] [Indexed: 11/26/2022]
Abstract
A comprehensive insight into the electronic and optical properties of small-lattice-mismatched InSe-GeTe heterobilayer (HBL) is performed based on the density functional theory (DFT) with van der Waals corrections from first-principles perspective. The optimization of most stable geometric stacking mode for the InSe-GeTe HBL is demonstrated. In addition, it is found that the InSe-GeTe HBL forms a type-II heterostructure of staggered-gap band alignment, resulting in an indirect band gap of 0.78 eV, which could be employed as a separator for electron-hole pairs. Moreover, the influence of biaxial strain on the electronic and optical properties of the InSe-GeTe HBL are systematically explored by calculating the band structures, density of states (PDOS), electron density differences, and optical absorption spectra of InSe-GeTe HBL under compressive and tensile biaxial strains. The results indicate that the electronic structures and optical performance of InSe-GeTe HBL could be modulated by changing the biaxial strain conveniently. Our findings provide new opportunities for the novel InSe-GeTe HBL to be applied in the electronic and optoelectronic fields.
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Affiliation(s)
- Guofeng Yang
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
- Correspondence:
| | - Rui Sun
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Yan Gu
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Feng Xie
- Nanjing Zike Optoelectronic Co., Ltd, Nanjing 211112, China;
| | - Yu Ding
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Xiumei Zhang
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Yueke Wang
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Bin Hua
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
| | - Xianfeng Ni
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
| | - Qian Fan
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
| | - Xing Gu
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
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30
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Liu X, Zhang Z, Luo Z, Lv B, Ding Z. Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E1674. [PMID: 31771190 PMCID: PMC6956148 DOI: 10.3390/nano9121674] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Revised: 11/17/2019] [Accepted: 11/20/2019] [Indexed: 11/16/2022]
Abstract
The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.
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Affiliation(s)
- Xuefei Liu
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;
- Semiconductor Power Device Reliability Engineering Center of Ministry of Education, Guiyang 550025, China;
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China;
| | - Zhaofu Zhang
- Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
| | - Zijiang Luo
- Semiconductor Power Device Reliability Engineering Center of Ministry of Education, Guiyang 550025, China;
- College of Information, Guizhou Finance and Economics University, Guiyang 550025, China
| | - Bing Lv
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China;
| | - Zhao Ding
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;
- Semiconductor Power Device Reliability Engineering Center of Ministry of Education, Guiyang 550025, China;
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31
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Niehues I, Blob A, Stiehm T, Michaelis de Vasconcellos S, Bratschitsch R. Interlayer excitons in bilayer MoS 2 under uniaxial tensile strain. NANOSCALE 2019; 11:12788-12792. [PMID: 31245801 DOI: 10.1039/c9nr03332g] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Atomically thin semiconducting transition metal dichalcogenides (TMDCs) have unique mechanical and optical properties. They are extremely flexible and exhibit a strong optical absorption at their excitonic resonances. Excitons in TMDC monolayers are strongly influenced by mechanical strain. Their energy shifts and even their line widths change. In bilayers, intralayer excitons with electrons and holes residing in the same layer also shift their energy with the applied strain. Recently, interlayer excitons with electrons and holes in different layers have been observed in bilayer MoS2 at room temperature. Here, we report on the behavior of interlayer excitons in bilayer MoS2 under uniaxial tensile strain of up to 1.6%. By recording the differential transmission spectra for different strain values, we derive a gauge factor of -47 meV per % for the energy shift of the interlayer exciton, which is similar to -49 meV per % for the intralayer A and B excitons. Our finding confirms the origin of the interlayer exciton at the K point in the Brillouin zone, with the electron located in one layer and the hole delocalized over two layers. Furthermore, our work paves the way for future straintronic devices based on interlayer excitons.
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Affiliation(s)
- Iris Niehues
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany.
| | - Anna Blob
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany.
| | - Torsten Stiehm
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany.
| | | | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany.
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32
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Zheng W, Zheng B, Yan C, Liu Y, Sun X, Qi Z, Yang T, Jiang Y, Huang W, Fan P, Jiang F, Ji W, Wang X, Pan A. Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1802204. [PMID: 30989032 PMCID: PMC6446596 DOI: 10.1002/advs.201802204] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Revised: 01/16/2019] [Indexed: 05/24/2023]
Abstract
2D vertical van der Waals (vdW) heterostructures with atomically sharp interfaces have attracted tremendous interest in 2D photonic and optoelectronic applications. Band alignment engineering in 2D heterostructures provides a perfect platform for tailoring interfacial charge transfer behaviors, from which desired optical and optoelectronic features can be realized. Here, by developing a two-step chemical vapor deposition strategy, direct vapor growth of monolayer PbI2 on monolayer transition metal dichalcogenides (TMDCs) (WS2, WSe2, or alloying WS2(1- x )Se2 x ), forming bilayer vertical heterostructures, is demonstrated. Based on the calculated electron band structures, the interfacial band alignments of the obtained heterostructures can be gradually tuned from type-I (PbI2/WS2) to type-II (PbI2/WSe2). Steady-state photoluminescence (PL) and time-resolved PL measurements reveal that the PL emissions from the bottom TMDC layers can be modulated from apparently enhanced (for WS2) to greatly quenched (for WSe2) compared to their monolayer counterparts, which can be attributed to the band alignment-induced distinct interfacial charge transfer behaviors. The band alignment nature of the heterostructures is further demonstrated by the PL excitation spectroscopy and interlayer exciton investigation. The realization of 2D vertical heterostructures with tunable band alignments will provide a new material platform for designing and constructing multifunctional optoelectronic devices.
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Affiliation(s)
- Weihao Zheng
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Biyuan Zheng
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Changlin Yan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro–Nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Ying Liu
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Xingxia Sun
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Zhaoyang Qi
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Tiefeng Yang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Ying Jiang
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
| | - Wei Huang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Peng Fan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Feng Jiang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro–Nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Xiao Wang
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
| | - Anlian Pan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
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33
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First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX). Molecules 2019; 24:molecules24030639. [PMID: 30759749 PMCID: PMC6384618 DOI: 10.3390/molecules24030639] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2018] [Revised: 02/07/2019] [Accepted: 02/08/2019] [Indexed: 11/17/2022] Open
Abstract
Group IV monochalcogenides M X (M = Ge, Sn; X = S, Se)-semiconductor isostructure to black phosphorene-have recently emerged as promising two-dimensional materials for ultrathin-film photovoltaic applications owing to the fascinating electronic and optical properties. Herein, using first-principles calculations, we systematically investigate the orbital contribution electronic properties, angular and strain dependence on the carrier effective masses of monolayer M X . Based on analysis on the orbital-projected band structure, the VBMs are found to be dominantly contributed from the p z orbital of X atom, while the CBM is mainly dominated by p x or p y orbital of M atom. 2D SnS has the largest anisotropy ratio due to the lacking of s orbital contribution which increases the anisotropy. Moreover, the electron/hole effective masses along the x direction have the steeper tendency of increase under the uniaxial tensile strain compared to those along y direction.
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34
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Wang Z, Guo S, Li H, Wang B, Sun Y, Xu Z, Chen X, Wu K, Zhang X, Xing F, Li L, Hu W. The Semiconductor/Conductor Interface Piezoresistive Effect in an Organic Transistor for Highly Sensitive Pressure Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805630. [PMID: 30548675 DOI: 10.1002/adma.201805630] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2018] [Revised: 11/09/2018] [Indexed: 06/09/2023]
Abstract
The piezoresistive pressure sensor, a kind of widely investigated artificial device to transfer force stimuli to electrical signals, generally consists of one or more kinds of conducting materials. Here, a highly sensitive pressure sensor based on the semiconductor/conductor interface piezoresistive effect is successfully demonstrated by using organic transistor geometry. Because of the efficient combination of the piezoresistive effect and field-effect modulation in a single sensor, this pressure sensor shows excellent performance, such as high sensitivity (514 kPa-1 ), low limit of detection, short response and recovery time, and robust stability. More importantly, the unique gate modulation effect in the transistor endows the sensor with an unparalleled ability-tunable sensitivity via bias conditions in a single sensor, which is of great significance for applications in complex pressure environments. The novel working principle and high performance represent significant progress in the field of pressure sensors.
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Affiliation(s)
- Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Tianjin University, Tianjin, 300072, China
- Advanced Nanomaterials Division, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
- Department of Chemistry, Shanghai University, Shanghai, 200444, China
| | - Shujing Guo
- Advanced Nanomaterials Division, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Hongwei Li
- Advanced Nanomaterials Division, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Bin Wang
- Department of Mechanics, Tianjin Key Laboratory of Nonlinear Dynamics and Chaos Control, Tianjin University, Yaguan Road 135, Tianjin, 300350, China
| | - Yongtao Sun
- Department of Mechanics, Tianjin Key Laboratory of Nonlinear Dynamics and Chaos Control, Tianjin University, Yaguan Road 135, Tianjin, 300350, China
| | - Zeyang Xu
- Advanced Nanomaterials Division, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Xiaosong Chen
- Advanced Nanomaterials Division, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Kunjie Wu
- Advanced Nanomaterials Division, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Xiaotao Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Tianjin University, Tianjin, 300072, China
| | - Feifei Xing
- Department of Chemistry, Shanghai University, Shanghai, 200444, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Tianjin University, Tianjin, 300072, China
- Advanced Nanomaterials Division, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
- Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Tianjin University, Tianjin, 300072, China
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35
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Gu D, Tao X, Chen H, Zhu W, Ouyang Y, Peng Q. Enhanced photocatalytic activity for water splitting of blue-phase GeS and GeSe monolayers via biaxial straining. NANOSCALE 2019; 11:2335-2342. [PMID: 30663763 DOI: 10.1039/c8nr08908f] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The structural, electronic, dipole-induced internal electric field, optical and photocatalytic properties of monolayer GeS and GeSe under external biaxial strain were investigated by using first-principles calculations. The monolayer GeS and GeSe are indirect semiconductors with the band gaps of 3.265 eV and 2.993 eV, respectively. The band alignment of the monolayer GeS and GeSe manifests the photocatalytic activity for water splitting. Especially, it is effective to tune the properties including structures, band gaps, surface potential difference, dipole moment P, dipole-induced internal electric field, absorption and photocatalytic activity of the monolayer GeS and GeSe via biaxial strain. Our results suggest that monolayer GeS and GeSe possess photocatalytic properties for water splitting, and strain engineering, especially tensile strain, can enhance the photocatalytic activity under ultraviolet and visible light.
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Affiliation(s)
- Di Gu
- Guangxi Colleges and Universities Key Laboratory of Novel Energy Materials and Related Technology, College of Physical Science and Technology, Guangxi University, Nanning 530004, People's Republic of China.
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36
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Ren K, Ren C, Luo Y, Xu Y, Yu J, Tang W, Sun M. Using van der Waals heterostructures based on two-dimensional blue phosphorus and XC (X = Ge, Si) for water-splitting photocatalysis: a first-principles study. Phys Chem Chem Phys 2019; 21:9949-9956. [DOI: 10.1039/c8cp07680d] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
BlueP/SiC and BlueP/GeC vdW heterostructures are high-efficiency photocatalysts for water-splitting at pH 0 and 7, respectively.
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Affiliation(s)
- Kai Ren
- School of Mechanical Engineering
- Southeast University
- Nanjing
- China
| | - Chongdan Ren
- Department of Physics
- Zunyi Normal College
- Zunyi 563002
- China
| | - Yi Luo
- School of Materials Science and Engineering
- Southeast University
- Nanjing
- China
| | - Yujing Xu
- School of Mechanical Engineering
- Southeast University
- Nanjing
- China
| | - Jin Yu
- School of Materials Science and Engineering
- Southeast University
- Nanjing
- China
| | - Wencheng Tang
- School of Mechanical Engineering
- Southeast University
- Nanjing
- China
| | - Minglei Sun
- School of Mechanical Engineering
- Southeast University
- Nanjing
- China
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37
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Liao C, Zhao Y, Ouyang G. Strain-Modulated Band Engineering in Two-Dimensional Black Phosphorus/MoS 2 van der Waals Heterojunction. ACS OMEGA 2018; 3:14641-14649. [PMID: 31458144 PMCID: PMC6644261 DOI: 10.1021/acsomega.8b01767] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2018] [Accepted: 10/15/2018] [Indexed: 05/27/2023]
Abstract
We investigate the band shift and band alignment of two-dimensional (2D) black phosphorus (BP)/MoS2 van der Waals heterojunction (vdW HJ) via uniaxial strain in terms of first-principles calculations and atomic-bond-relaxation method. We find that the band gap of 2D BP/MoS2 HJ decreases linearly with applied tensile strain and Mo-S bond breaks down at 10% tensile strain. Meanwhile, the band gap slightly increases and then monotonically decreases under compressive strain and there appears a semiconductor-to-metal transition at -11 and -12% strain in the y and x directions, respectively. Moreover, 2D BP/MoS2 HJ maintains type-II band alignment for strain applied in the y direction whereas type-II/I band transition appears at -5% strain in the x direction. Moreover, we propose an analytical model to address the strain-modulated band engineering of 2D BP/MoS2 vdW HJ at the atomic level. Our results suggest a promising way to explain the intrinsic mechanism of strain engineering and manipulate the electronic properties of 2D vdW HJs.
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38
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Tweedie MEP, Sheng Y, Sarwat SG, Xu W, Bhaskaran H, Warner JH. Inhomogeneous Strain Release during Bending of WS 2 on Flexible Substrates. ACS APPLIED MATERIALS & INTERFACES 2018; 10:39177-39186. [PMID: 30383356 DOI: 10.1021/acsami.8b12707] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) materials hold great promise in flexible electronics, but the weak van der Waals interlayer bonding may pose a problem during bending, where easy interlayer sliding can occur. Furthermore, thin films of rigid materials are often observed to delaminate from soft substrates during straining. Here, we study the influence of substrate strain on some of the heterostructure configurations we expect to find in devices, composed of three common 2D materials: graphene, tungsten disulfide, and boron nitride. We used photoluminescence (PL) spectroscopy to measure changes in the heterostructures with strain applied in situ. All heterostructures were fabricated directly on polymer substrates, using materials synthesized by chemical vapor deposition. We observed an inhomogeneous release of strain in all structures, leading to a nonrecoverable broadening of the PL peak and shift of the bandgap. This suggests the need for preconditioning devices before service to ensure stable behavior. A gradual time-dependent relaxation of strain between strain cycles was characterized using time-dependent measurements-an effect which could lead to drift of device behavior during operation. Furthermore, possible degradation was assessed by performing the strain and relax the cycle up to 200 times, where we found little further change after the initial shifts had stabilized. These results have important ramifications for devices fabricated from these and other 2D materials, as they suggest extra processing steps and considerations that must be taken to achieve consistent and stable properties.
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Affiliation(s)
- Martin E P Tweedie
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yuewen Sheng
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Syed Ghazi Sarwat
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Wenshuo Xu
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Harish Bhaskaran
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Jamie H Warner
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
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39
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Rivera P, Yu H, Seyler KL, Wilson NP, Yao W, Xu X. Interlayer valley excitons in heterobilayers of transition metal dichalcogenides. NATURE NANOTECHNOLOGY 2018; 13:1004-1015. [PMID: 30104622 DOI: 10.1038/s41565-018-0193-0] [Citation(s) in RCA: 180] [Impact Index Per Article: 30.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2018] [Accepted: 06/11/2018] [Indexed: 05/12/2023]
Abstract
Stacking different two-dimensional crystals into van der Waals heterostructures provides an exciting approach to designing quantum materials that can harness and extend the already fascinating properties of the constituents. Heterobilayers of transition metal dichalcogenides are particularly attractive for low-dimensional semiconductor optics because they host interlayer excitons-with electrons and holes localized in different layers-which inherit valley-contrasting physics from the monolayers and thereby possess various novel and appealing properties compared to other solid-state nanostructures. This Review presents the contemporary experimental and theoretical understanding of these interlayer excitons. We discuss their unique optical properties arising from the underlying valley physics, the strong many-body interactions and electrical control resulting from the electric dipole moment, and the unique effects of a moiré superlattice on the interlayer exciton potential landscape and optical properties.
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Affiliation(s)
- Pasqual Rivera
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Hongyi Yu
- Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China
| | - Kyle L Seyler
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Nathan P Wilson
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Wang Yao
- Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
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40
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Zheng B, Ma C, Li D, Lan J, Zhang Z, Sun X, Zheng W, Yang T, Zhu C, Ouyang G, Xu G, Zhu X, Wang X, Pan A. Band Alignment Engineering in Two-Dimensional Lateral Heterostructures. J Am Chem Soc 2018; 140:11193-11197. [DOI: 10.1021/jacs.8b07401] [Citation(s) in RCA: 98] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Jianyue Lan
- Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China
| | - Zhe Zhang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, People’s Republic of China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Tiefeng Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, People’s Republic of China
| | - Gengzhao Xu
- Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
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41
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Li T, Li M, Lin Y, Cai H, Wu Y, Ding H, Zhao S, Pan N, Wang X. Probing Exciton Complexes and Charge Distribution in Inkslab-Like WSe 2 Homojunction. ACS NANO 2018; 12:4959-4967. [PMID: 29718657 DOI: 10.1021/acsnano.8b02060] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
By virtue of the layer-dependent band structure and valley-selected optical/electronic properties, atomically layered transition-metal dichalcogenides (TMDs) exhibit great potentials such as in valleytronics and quantum devices, and have captured significant attentions. Precise control of the optical and electrical properties of TMDs is always the pursuing goal for real applications, and constructing advanced structures that allow playing with more degrees of freedom may hold the key. Here, we introduce a triangular inkslab-like WSe2 homojunction with a monolayer in the inner surrounded by a multilayer frame. Benefit from this interesting structure, the photoluminescence (PL) peaks redshift up to 50 meV and the charge density increases about 6 times from the center to the edge region of the inner monolayer. We demonstrated that the Se-deficient multilayer frame offers the excessive free electrons for the generation of the electron density gradient inside the monolayer, which also results in the spatial variation and distribution gradient of a series of exciton complexes. Furthermore, we observed the strong rectifying characteristic and clear photovoltaic response across the homojunction through measuring and mapping the photocurrent of the devices. Our result provides another route for efficient modulation of the exciton-complex emissions of TMDs, which is exceptionally desirable for the "layer- and charge-engineered" photonic and optoelectronic devices.
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Affiliation(s)
- Taishen Li
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Mingling Li
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Yue Lin
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Hongbing Cai
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences,School of Physical Sciences , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Yiming Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Huaiyi Ding
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences,School of Physical Sciences , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Siwen Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Nan Pan
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences,School of Physical Sciences , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
| | - Xiaoping Wang
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences,School of Physical Sciences , University of Science and Technology of China , Hefei , Anhui 230026 , P. R. China
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42
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Huder L, Artaud A, Le Quang T, de Laissardière GT, Jansen AGM, Lapertot G, Chapelier C, Renard VT. Electronic Spectrum of Twisted Graphene Layers under Heterostrain. PHYSICAL REVIEW LETTERS 2018; 120:156405. [PMID: 29756887 DOI: 10.1103/physrevlett.120.156405] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2017] [Revised: 02/12/2018] [Indexed: 05/13/2023]
Abstract
We demonstrate that stacking layered materials allows a strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculations to show that small uniaxial heterostrain suppresses Dirac cones and leads to the emergence of flat bands in twisted graphene layers (TGLs). Moreover, we demonstrate that heterostrain reconstructs, much more severely, the energy spectrum of TGLs than homostrain for which both layers are strained identically, a result which should apply to virtually all van der Waals structures opening exciting possibilities for straintronics with 2D materials.
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Affiliation(s)
- Loïc Huder
- Université Grenoble Alpes, CEA, INAC, PHELIQS, F-38000 Grenoble, France
| | - Alexandre Artaud
- Université Grenoble Alpes, CEA, INAC, PHELIQS, F-38000 Grenoble, France
- Université Grenoble Alpes, CNRS, Institut NEEL, F-38000 Grenoble, France
| | - Toai Le Quang
- Université Grenoble Alpes, CEA, INAC, PHELIQS, F-38000 Grenoble, France
| | - Guy Trambly de Laissardière
- Laboratoire de Physique Théorique et Modélisation, Université de Cergy-Pontoise-CNRS, F-95302 Cergy-Pontoise, France
| | | | - Gérard Lapertot
- Université Grenoble Alpes, CEA, INAC, PHELIQS, F-38000 Grenoble, France
| | - Claude Chapelier
- Université Grenoble Alpes, CEA, INAC, PHELIQS, F-38000 Grenoble, France
| | - Vincent T Renard
- Université Grenoble Alpes, CEA, INAC, PHELIQS, F-38000 Grenoble, France
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43
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Xu W, Kozawa D, Liu Y, Sheng Y, Wei K, Koman VB, Wang S, Wang X, Jiang T, Strano MS, Warner JH. Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS 2 :hBN:MoS 2 Heterostructures for Exciton Energy Transfer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1703727. [PMID: 29411935 DOI: 10.1002/smll.201703727] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2017] [Revised: 12/01/2017] [Indexed: 06/08/2023]
Abstract
The 2D semiconductor monolayer transition metal dichalcogenides, WS2 and MoS2 , are grown by chemical vapor deposition (CVD) and assembled by sequential transfer into vertical layered heterostructures (VLHs). Insulating hBN, also produced by CVD, is utilized to control the separation between WS2 and MoS2 by adjusting the layer number, leading to fine-scale tuning of the interlayer interactions within the VLHs. The interlayer interactions are studied by photoluminescence (PL) spectroscopy and are demonstrated to be highly sensitive to the input excitation power. For thin hBN separators (one to two layers), the total PL emission switches from quenching to enhancement by increasing the laser power. Femtosecond broadband transient absorption measurements demonstrate that the increase in PL quantum yield results from Förster energy transfer from MoS2 to WS2 . The PL signal is further enhanced at cryogenic temperatures due to the suppressed nonradiative decay channels. It is shown that (4 ± 1) layers of hBN are optimum for obtaining PL enhancement in the VLHs. Increasing thickness beyond this causes the enhancement factor to diminish, with the WS2 and MoS2 then behaving as isolated noninteracting monolayers. These results indicate how controlling the exciton generation rate influences energy transfer and plays an important role in the properties of VLHs.
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Affiliation(s)
- Wenshuo Xu
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Daichi Kozawa
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yu Liu
- College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China
| | - Yuewen Sheng
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Ke Wei
- College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China
| | - Volodymyr B Koman
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Shanshan Wang
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Xiaochen Wang
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Tian Jiang
- College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jamie H Warner
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
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44
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Cai Z, Liu B, Zou X, Cheng HM. Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures. Chem Rev 2018; 118:6091-6133. [PMID: 29384374 DOI: 10.1021/acs.chemrev.7b00536] [Citation(s) in RCA: 451] [Impact Index Per Article: 75.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.
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Affiliation(s)
- Zhengyang Cai
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Bilu Liu
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China.,Shenyang National Laboratory for Materials Sciences, Institute of Metal Research , Chinese Academy of Sciences , Shenyang , Liaoning 110016 , People's Republic of China.,Center of Excellence in Environmental Studies (CEES) , King Abdulaziz University , Jeddah 21589 , Saudi Arabia
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45
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Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides. CRYSTALS 2018. [DOI: 10.3390/cryst8010035] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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46
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Wang H, Wei W, Li F, Huang B, Dai Y. Step-like band alignment and stacking-dependent band splitting in trilayer TMD heterostructures. Phys Chem Chem Phys 2018; 20:25000-25008. [DOI: 10.1039/c8cp05200j] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
We propose a kind of trilayer TMD heterostructure with step-like band alignment, and the effects of interlayer coupling, strain and SOC are also discussed.
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Affiliation(s)
- Hao Wang
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Wei Wei
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Fengping Li
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Baibiao Huang
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Ying Dai
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
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47
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Tian XQ, Wang XR, Wei YD, Liu L, Gong ZR, Gu J, Du Y, Yakobson BI. Highly Tunable Electronic Structures of Phosphorene/Carbon Nanotube Heterostructures through External Electric Field and Atomic Intercalation. NANO LETTERS 2017; 17:7995-8004. [PMID: 29191020 DOI: 10.1021/acs.nanolett.7b04562] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Black phosphorene (BP)/carbon nanotube (CNT) heterostructures can be classified as either type I or II, depending on the size of the CNTs. An external electric field (Eext) can modulate the interfacial electronic structures and separate the electron and hole carriers of the BP/CNT heterostructures. The giant Stark effect is observed, and the band gap of the semiconducting heterostructures can vary several-fold. The intercalation of 3d transition metals can strongly bond BP and CNTs together. Furthermore, strong ferromagnetism with Curie temperature (TC) above room temperature is predicted. It is expected that these BP/CNT heterostructures will provide new opportunities and applications in the fields of optoelectronics and electronics as well as spintronics.
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Affiliation(s)
- Xiao-Qing Tian
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
- Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
| | - Xiang-Rong Wang
- Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
- HKUST Shenzhen Research Institute , Shenzhen 518057, China
| | - Ya-Dong Wei
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Lin Liu
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Zhi-Rui Gong
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Juan Gu
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Yu Du
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Department of Chemistry, and the Smalley Institute for Nanoscale Science and Technology, Rice University , Houston, Texas 77005, United States
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48
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Van der Waals epitaxial growth and optoelectronics of large-scale WSe 2/SnS 2 vertical bilayer p-n junctions. Nat Commun 2017; 8:1906. [PMID: 29203864 PMCID: PMC5715014 DOI: 10.1038/s41467-017-02093-z] [Citation(s) in RCA: 166] [Impact Index Per Article: 23.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2017] [Accepted: 11/03/2017] [Indexed: 11/27/2022] Open
Abstract
High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
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49
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Pak S, Lee J, Lee YW, Jang AR, Ahn S, Ma KY, Cho Y, Hong J, Lee S, Jeong HY, Im H, Shin HS, Morris SM, Cha S, Sohn JI, Kim JM. Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS 2/WS 2 van der Waals Heterobilayer. NANO LETTERS 2017; 17:5634-5640. [PMID: 28832158 PMCID: PMC5959243 DOI: 10.1021/acs.nanolett.7b02513] [Citation(s) in RCA: 83] [Impact Index Per Article: 11.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2017] [Revised: 08/17/2017] [Indexed: 05/21/2023]
Abstract
van der Waals heterostructures composed of two different monolayer crystals have recently attracted attention as a powerful and versatile platform for studying fundamental physics, as well as having great potential in future functional devices because of the diversity in the band alignments and the unique interlayer coupling that occurs at the heterojunction interface. However, despite these attractive features, a fundamental understanding of the underlying physics accounting for the effect of interlayer coupling on the interactions between electrons, photons, and phonons in the stacked heterobilayer is still lacking. Here, we demonstrate a detailed analysis of the strain-dependent excitonic behavior of an epitaxially grown MoS2/WS2 vertical heterostructure under uniaxial tensile and compressive strain that enables the interlayer interactions to be modulated along with the electronic band structure. We find that the strain-modulated interlayer coupling directly affects the characteristic combined vibrational and excitonic properties of each monolayer in the heterobilayer. It is further revealed that the relative photoluminescence intensity ratio of WS2 to MoS2 in our heterobilayer increases monotonically with tensile strain and decreases with compressive strain. We attribute the strain-dependent emission behavior of the heterobilayer to the modulation of the band structure for each monolayer, which is dictated by the alterations in the band gap transitions. These findings present an important pathway toward designing heterostructures and flexible devices.
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Affiliation(s)
- Sangyeon Pak
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Juwon Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Young-Woo Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - A-Rang Jang
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- Department
of Chemistry and Department of Energy Engineering, Low-Dimensional
Carbon Materials Center, Ulsan National
Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Seongjoon Ahn
- Department
of Chemistry and Department of Energy Engineering, Low-Dimensional
Carbon Materials Center, Ulsan National
Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Kyung Yeol Ma
- Department
of Chemistry and Department of Energy Engineering, Low-Dimensional
Carbon Materials Center, Ulsan National
Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Yuljae Cho
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - John Hong
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Sanghyo Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Hu Young Jeong
- UNIST
Central Research Facilities (UCRF), Ulsan
National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan 44919, Republic
of Korea
| | - Hyunsik Im
- Division
of Physics and Semiconductor Science, Dongguk
University, Seoul 100-715, Republic of Korea
| | - Hyeon Suk Shin
- Department
of Chemistry and Department of Energy Engineering, Low-Dimensional
Carbon Materials Center, Ulsan National
Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Stephen M. Morris
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - SeungNam Cha
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- Tel: +44-1865-283034. Fax: +44-1865-273010. E-mail:
| | - Jung Inn Sohn
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- Tel: +44-1865-273912. Fax: +44-1865-273010. E-mail:
| | - Jong Min Kim
- Department
of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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50
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Wang G, Dai Z, Wang Y, Tan P, Liu L, Xu Z, Wei Y, Huang R, Zhang Z. Measuring Interlayer Shear Stress in Bilayer Graphene. PHYSICAL REVIEW LETTERS 2017; 119:036101. [PMID: 28777616 DOI: 10.1103/physrevlett.119.036101] [Citation(s) in RCA: 64] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2017] [Indexed: 06/07/2023]
Abstract
Monolayer two-dimensional (2D) crystals exhibit a host of intriguing properties, but the most exciting applications may come from stacking them into multilayer structures. Interlayer and interfacial shear interactions could play a crucial role in the performance and reliability of these applications, but little is known about the key parameters controlling shear deformation across the layers and interfaces between 2D materials. Herein, we report the first measurement of the interlayer shear stress of bilayer graphene based on pressurized microscale bubble loading devices. We demonstrate continuous growth of an interlayer shear zone outside the bubble edge and extract an interlayer shear stress of 40 kPa based on a membrane analysis for bilayer graphene bubbles. Meanwhile, a much higher interfacial shear stress of 1.64 MPa was determined for monolayer graphene on a silicon oxide substrate. Our results not only provide insights into the interfacial shear responses of the thinnest structures possible, but also establish an experimental method for characterizing the fundamental interlayer shear properties of the emerging 2D materials for potential applications in multilayer systems.
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Affiliation(s)
- Guorui Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, China
| | - Zhaohe Dai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
- Center for Mechanics of Solids, Structures and Materials, Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Yanlei Wang
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
| | - PingHeng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhiping Xu
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
| | - Yueguang Wei
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
| | - Rui Huang
- Center for Mechanics of Solids, Structures and Materials, Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Zhong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
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