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Shi Y, Zhao J, Zhang B, Qin J, Hu X, Cheng Y, Yu J, Jie J, Zhang X. Freestanding Serpentine Silicon Strips with Ultrahigh Stretchability over 300% for Wearable Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313603. [PMID: 38489559 DOI: 10.1002/adma.202313603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 03/07/2024] [Indexed: 03/17/2024]
Abstract
Well-functionalized electronic materials, such as silicon, in a stretchable format are desirable for high-performance wearable electronics. However, obtaining Si materials that meet the required stretchability of over 100% for wearable applications remains a significant challenge. Herein, a rational design strategy is proposed to achieve freestanding serpentine Si strips (FS-Si strips) with ultrahigh stretchability, fulfilling wearable requirements. The self-supporting feature makes the strips get rid of excessive constraints from substrates and enables them to deform with the minimum strain energy. Micrometer-scale thicknesses enhance robustness, and large diameter-to-width ratios effectively reduce strain concentration. Consequently, the FS-Si strips with the optimum design could withstand 300% stretch, bending, and torsion without fracturing, even under rough manual operation. They also exhibit excellent stability and durability over 50,000 cycles of 100% stretching cycles. For wearable applications, the FS-Si strips can maintain conformal contact with the skin and have a maximum stretchability of 120%. Moreover, they are electrically insensitive to large deformations, which ensure signal stability during their daily use. Combined with mature processing techniques and the excellent semiconductor properties of Si, FS-Si strips are promising core stretchable electronic materials for wearable electronics.
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Affiliation(s)
- Yihao Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Jianzhong Zhao
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, P. R. China
- Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Bingchang Zhang
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, P. R. China
| | - Jiahao Qin
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
- Suzhou Industrial Park Monash Research Institute of Science and Technology, Monash University, Suzhou, 215000, P. R. China
- Department of Materials Science and Engineering, Monash University, Clayton, VIC, 3800, Australia
| | - Xinyue Hu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Yuan Cheng
- Suzhou Industrial Park Monash Research Institute of Science and Technology, Monash University, Suzhou, 215000, P. R. China
- Department of Materials Science and Engineering, Monash University, Clayton, VIC, 3800, Australia
| | - Jia Yu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Xiaohong Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, P. R. China
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Gu J, Shen Y, Tian S, Xue Z, Meng X. Recent Advances in Nanowire-Based Wearable Physical Sensors. BIOSENSORS 2023; 13:1025. [PMID: 38131785 PMCID: PMC10742341 DOI: 10.3390/bios13121025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 12/06/2023] [Accepted: 12/08/2023] [Indexed: 12/23/2023]
Abstract
Wearable electronics is a technology that closely integrates electronic devices with the human body or clothing, which can realize human-computer interaction, health monitoring, smart medical, and other functions. Wearable physical sensors are an important part of wearable electronics. They can sense various physical signals from the human body or the surrounding environment and convert them into electrical signals for processing and analysis. Nanowires (NW) have unique properties such as a high surface-to-volume ratio, high flexibility, high carrier mobility, a tunable bandgap, a large piezoresistive coefficient, and a strong light-matter interaction. They are one of the ideal candidates for the fabrication of wearable physical sensors with high sensitivity, fast response, and low power consumption. In this review, we summarize recent advances in various types of NW-based wearable physical sensors, specifically including mechanical, photoelectric, temperature, and multifunctional sensors. The discussion revolves around the structural design, sensing mechanisms, manufacture, and practical applications of these sensors, highlighting the positive role that NWs play in the sensing process. Finally, we present the conclusions with perspectives on current challenges and future opportunities in this field.
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Affiliation(s)
| | | | | | - Zhaoguo Xue
- National Key Laboratory of Strength and Structural Integrity, School of Aeronautic Science and Engineering, Beihang University, Beijing 100191, China
| | - Xianhong Meng
- National Key Laboratory of Strength and Structural Integrity, School of Aeronautic Science and Engineering, Beihang University, Beijing 100191, China
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Yan J, Zhang Y, Liu Z, Wang J, Xu J, Yu L. Ultracompact single-nanowire-morphed grippers driven by vectorial Lorentz forces for dexterous robotic manipulations. Nat Commun 2023; 14:3786. [PMID: 37355640 DOI: 10.1038/s41467-023-39524-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2022] [Accepted: 06/16/2023] [Indexed: 06/26/2023] Open
Abstract
Ultracompact and soft pairwise grippers, capable of swift large-amplitude multi-dimensional maneuvering, are widely needed for high-precision manipulation, assembly and treatment of microscale objects. In this work, we demonstrate the simplest construction of such robotic structures, shaped via a single-nanowire-morphing and powered by geometry-tailored Lorentz vectorial forces. This has been accomplished via a designable folding growth of ultralong and ultrathin silicon NWs into single and nested omega-ring structures, which can then be suspended upon electrode frames and coated with silver metal layer to carry a passing current along geometry-tailored pathway. Within a magnetic field, the grippers can be driven by the Lorentz forces to demonstrate swift large-amplitude maneuvers of grasping, flapping and twisting of microscale objects, as well as high-frequency or even resonant vibrations to overcome sticky van de Waals forces in microscale for a reliable releasing of carried payloads. More sophisticated and functional teamwork of mutual alignment, precise passing and selective light-emitting-diode unit testing and installation were also successfully accomplished via pairwise gripper collaborations. This single-nanowire-morphing strategy provides an ideal platform to rapidly design, construct and prototype a wide range of advanced ultracompact nanorobotic, mechanical sensing and biological manipulation functionalities.
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Affiliation(s)
- Jiang Yan
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, 210023, Nanjing, China
| | - Ying Zhang
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, 210023, Nanjing, China
| | - Zongguang Liu
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, 210023, Nanjing, China.
| | - Junzhuan Wang
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, 210023, Nanjing, China
| | - Jun Xu
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, 210023, Nanjing, China
| | - Linwei Yu
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, 210023, Nanjing, China.
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Zhang Z, Zhang X, Ma B, Ding M, Zhu B, Tong D. Measurement of Linear Springs' Stiffness Factor Using Ultrasonic Sensing. SENSORS (BASEL, SWITZERLAND) 2022; 22:5878. [PMID: 35957435 PMCID: PMC9371417 DOI: 10.3390/s22155878] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/05/2022] [Revised: 07/27/2022] [Accepted: 08/03/2022] [Indexed: 06/15/2023]
Abstract
We designed an ultrasonic testing instrument that consisted of a single-chip microcomputer module, a digital display module, and an ultrasonic sensor module, which conveniently eliminated the troubles faced by the traditional Jolly's scale. For comparison purpose, three linear springs' stiffness factors were measured by Jolly's scale and by our ultrasonic testing instrument. We found that our instrument could more conveniently and in real time display the distance values between the ultrasonic ranging module and the horizontal bottom plate when loading different weights. By processing these distance data, we found that our instrument was more convenient for obtaining the linear springs' stiffness factors and that the results were more accurate than those of Jolly's scale. This study verified that our instrument can accurately realize the performance of Jolly's scale under diverse temperatures and humidity levels with high data reliability and perfect stability.
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Li K, Shuai Y, Cheng X, Luan H, Liu S, Yang C, Xue Z, Huang Y, Zhang Y. Island Effect in Stretchable Inorganic Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107879. [PMID: 35307953 DOI: 10.1002/smll.202107879] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2021] [Revised: 02/28/2022] [Indexed: 06/14/2023]
Abstract
Island-bridge architectures represent a widely used structural design in stretchable inorganic electronics, where deformable interconnects that form the bridge provide system stretchability, and functional components that reside on the islands undergo negligible deformations. These device systems usually experience a common strain concentration phenomenon, i.e., "island effect", because of the modulus mismatch between the soft elastomer substrate and its on-top rigid components. Such an island effect can significantly raise the surrounding local strain, therefore increasing the risk of material failure for the interconnects in the vicinity of the islands. In this work, a systematic study of such an island effect through combined theoretical analysis, numerical simulations and experimental measurements is presented. To relieve the island effect, a buffer layer strategy is proposed as a generic route to enhanced stretchabilities of deformable interconnects. Both experimental and numerical results illustrate the applicability of this strategy to 2D serpentine and 3D helical interconnects, as evidenced by the increased stretchabilities (e.g., by 1.5 times with a simple buffer layer, and 2 times with a ring buffer layer, both for serpentine interconnects). The application of the patterned buffer layer strategy in a stretchable light emitting diodes system suggests promising potentials for uses in other functional device systems.
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Affiliation(s)
- Kan Li
- State Key Laboratory of Digital Manufacture Equipment and Technology, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yumeng Shuai
- AML, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, P. R. China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Xu Cheng
- AML, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, P. R. China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Haiwen Luan
- Departments of Mechanical Engineering, Civil and Environmental Engineering, and Materials Science and Engineering and Center for Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA
| | - Siyi Liu
- Center for Mechanics of Solids, Structures and Materials, Department of Aerospace Engineering and Engineering Mechanics, University of Texas at Austin, Austin, TX, 78712, USA
| | - Ce Yang
- Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zhaoguo Xue
- Institute of Solid Mechanics, Beihang University (BUAA), Beijing, 100191, P. R. China
| | - Yonggang Huang
- Departments of Mechanical Engineering, Civil and Environmental Engineering, and Materials Science and Engineering and Center for Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA
| | - Yihui Zhang
- AML, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, P. R. China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
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Hu R, Yu L. Review on 3D growth engineering and integration of nanowires for advanced nanoelectronics and sensor applications. NANOTECHNOLOGY 2022; 33:222002. [PMID: 35148520 DOI: 10.1088/1361-6528/ac547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Accepted: 02/11/2022] [Indexed: 06/14/2023]
Abstract
Recent years have witnessed increasing efforts devoted to the growth, assembly and integration of quasi-one dimensional (1D) nanowires (NWs), as fundamental building blocks in advanced three-dimensional (3D) architecture, to explore a series of novel nanoelectronic and sensor applications. An important motivation behind is to boost the integration density of the electronic devices by stacking more functional units in theout-of-plane z-direction, where the NWs are supposed to be patterned or grown as vertically standing or laterally stacked channels to minimize their footprint area. The other driving force is derived from the unique possibility of engineering the 1D NWs into more complex, as well as more functional, 3D nanostructures, such as helical springs and kinked probes, which are ideal nanostructures for developping advanced nanoelectromechanical system (NEMS), bio-sensing and manipulation applications. This Review will first examine the recent progresses made in the construction of 3D nano electronic devices, as well as the new fabrication and growth technologies established to enable an efficient 3D integration of the vertically standing or laterally stacked NW channels. Then, the different approaches to produce and tailor more sophisticated 3D helical springs or purposely-designed nanoprobes will be revisited, together with their applications in NEMS resonators, bio sensors and stimulators in neural system.
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Affiliation(s)
- Ruijin Hu
- National Laboratory of Solid-State Microstructures/School of Electronics Science and Engineering/ Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093 Nanjing, People's Republic of China
| | - Linwei Yu
- National Laboratory of Solid-State Microstructures/School of Electronics Science and Engineering/ Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093 Nanjing, People's Republic of China
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Yuan R, Qian W, Liu Z, Wang J, Xu J, Chen K, Yu L. Designable Integration of Silicide Nanowire Springs as Ultra-Compact and Stretchable Electronic Interconnections. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104690. [PMID: 34859580 DOI: 10.1002/smll.202104690] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 10/15/2021] [Indexed: 06/13/2023]
Abstract
Stretchable electronics are finding widespread applications in bio-sensing, skin-mimetic electronics, and flexible displays, where high-density integration of elastic and durable interconnections is a key capability. Instead of forming a randomly crossed nanowire (NW) network, here, a large-scale and precise integration of highly conductive nickel silicide nanospring (SiNix -NS) arrays are demonstrated, which are fabricated out of an in-plane solid-liquid-solid guided growth of planar Si nanowires (SiNWs), and subsequent alloy-forming process that boosts the channel conductivity over 4 orders of magnitude (to 2 × 104 S cm-1 ). Thanks to the narrow diameter of the serpentine SiNix -NS channels, the elastic geometry engineering can be accomplished within a very short interconnection distance (down to ≈3 µm), which is crucial for integrating high-density displays or logic units in a rigid-island and elastic-interconnection configuration. Deployed over soft polydimethylsiloxane thin film substrate, the SiNix -NS array demonstrates an excellent stretchability that can sustain up to 50% stretching and for 10 000 cycles (at 15%). This approach paves the way to integrate high-density inorganic electronics and interconnections for high-performance health monitoring, displays, and on-skin electronic applications, based on the mature and rather reliable Si thin film technology.
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Affiliation(s)
- Rongrong Yuan
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Wentao Qian
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Zongguang Liu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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8
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Liu Z, Yan J, Ma H, Hu T, Wang J, Shi Y, Xu J, Chen K, Yu L. Ab Initio Design, Shaping, and Assembly of Free-Standing Silicon Nanoprobes. NANO LETTERS 2021; 21:2773-2779. [PMID: 33729811 DOI: 10.1021/acs.nanolett.0c04804] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Free-standing silicon nanoprobes (SiNPs) are critical tools for intracellular bioelectrical signal recording, while a scalable fabrication of these tiny SiNPs with ab initio geometry designs has not been possible. In this work, we demonstrate a novel growth shaping of slim Si nanowires (SiNWs) into SiNPs with sharp tips (curvature radii <300 nm), tunable angles of 30°, 60°, to 120° and even programmable triangle/circular shapes. A precise growth integration of orderly single, double, and quadruple SiNPs at prescribed locations enables convenient electrode connection, transferring and mounting these tiny tips onto movable arms to serve as long-protruding (over 4-20 μm) nanoprobes. Mechanical flexibility, resilience, and field-effect sensing functionality of the SiNPs were systematically testified in liquid nanodroplet and cell environments. This highly reliable and economic manufacturing of advanced SiNPs holds a strong potential to boost and open up the market implementations of a wide range of intracellular sensing, monitoring, and editing applications.
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Affiliation(s)
- Zongguang Liu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Jiang Yan
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Haiguang Ma
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Tiancheng Hu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
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Xu S, Hu R, Wang J, Li Z, Xu J, Chen K, Yu L. Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics. NANOTECHNOLOGY 2021; 32:265602. [PMID: 33752187 DOI: 10.1088/1361-6528/abf0c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2020] [Accepted: 03/22/2021] [Indexed: 06/12/2023]
Abstract
Ultrathin silicon nanowires (SiNWs) are ideal 1D channels to construct high performance nanoelectronics and sensors. We here report on a high-density catalytic growth of orderly ultrathin SiNWs, with diameter down toDnw=27±2nmand narrow NW-to-NW spacing of onlySnw ∼80 nm, without the use of high-resolution lithography. This has been accomplished via a terrace-confined strategy, where tiny indium (In) droplets move on sidewall terraces to absorb precoated amorphous Si layer as precursor and produce self-aligned SiNW array. It is found that, under proper parameter control, a tighter terrace-step confinement can help to scale the dimensions of the SiNW array down to the extremes that have not been reported before, while maintaining still a stable guiding growth over complex contours. Prototype SiNW field effect transistors demonstrate a highIon/Ioffcurrent ratio ∼107, low leakage current of ∼0.3 pA and steep subthreshold swing of 220 mV dec-1. These results highlight the unexplored potential of catalytic growth in advanced nanostructure fabrication that is highly relevant for scalable SiNW logic and sensor applications.
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Affiliation(s)
- Shun Xu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
| | - Ruijin Hu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
| | - Zheyang Li
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
- Micro-Fabrication and Integration Technology Center, Nanjing University, 210093 Nanjing, People's Republic of China
| | - Jun Xu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
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Zhang T, Hu R, Zhang S, Liu Z, Wang J, Xu J, Chen K, Yu L. Superfast Growth Dynamics of High-Quality Silicon Nanowires on Polymer Films via Self-Selected Laser-Droplet-Heating. NANO LETTERS 2021; 21:569-576. [PMID: 33350839 DOI: 10.1021/acs.nanolett.0c04058] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Growing high quality silicon nanowires (SiNWs) at elevated temperature on cooler polymer films seems to be contradictive but highly desirable for building high performance flexible and wearable electronics. In this work, we demonstrate a superfast (vnw > 3.5 μm·s-1) growth of high quality SiNWs on polymer/glass substrates, powered by self-selected laser at 808 nm heating of indium catalyst droplets that absorb amorphous Si layer to produce SiNWs. Because of the tiny heat capacity of the nanodroplets, the SiNW growth can be quickly heated up and frozen via rapid laser ON/OFF switching, enabling a deterministic diameter modulation in the ultralong SiNWs. Finally, prototype field effect transistors are also fabricated upon the laser-droplet-heating grown SiNWs with a high Ion/Ioff ratio of >104 and reasonable subthreshold swing of 386 mV·dec-1, opening a generic new route to integrate high-quality NW channels directly upon large area and lightweight polymer substrates for developing high-performance flexible electronics.
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Affiliation(s)
- Ting Zhang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
| | - Ruijin Hu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
| | - Shaobo Zhang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
| | - Zongguang Liu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, China
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11
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Hu R, Xu S, Wang J, Shi Y, Xu J, Chen K, Yu L. Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves. NANO LETTERS 2020; 20:7489-7497. [PMID: 32970444 DOI: 10.1021/acs.nanolett.0c02950] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the construction of versatile 3D nanocomplexes, while the major challenge is to achieve a precise location and uniformity control, as guaranteed by top-down lithography. Here, an unprecedented uniform and reliable growth integration of 10-layer stacked Si nanowires (SiNWs) has been accomplished, for the very first time, via a new groove-confined and tailored catalyst formation and guided growth upon the truncated sidewall of SiO2/SiNx multilayers. The SiNW array accomplishes a narrow diameter of Dnw = 28 ± 2.4 nm, NW-to-NW spacing of tsp = 40 nm, and extremely stable growth over Lnw > 50 μm and bending locations, which can compete with or even outperform the state-of-the-art top-down lithography and etching approaches, in terms of stacking number, channel uniformity at different levels, fabrication cost, and efficiency. These results provide a solid basis to establish a new 3D integration approach to batch-manufacture various advanced electronic and sensor applications.
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Affiliation(s)
- Ruijin Hu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093 Nanjing, P. R. China
| | - Shun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093 Nanjing, P. R. China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093 Nanjing, P. R. China
| | - Yi Shi
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093 Nanjing, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093 Nanjing, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093 Nanjing, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093 Nanjing, P. R. China
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12
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Zhang X, Wang J, Yang Z, Tang X, Yue Y. Strong structural occupation ratio effect on mechanical properties of silicon carbide nanowires. Sci Rep 2020; 10:11386. [PMID: 32647170 PMCID: PMC7347842 DOI: 10.1038/s41598-020-67652-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 03/17/2020] [Indexed: 11/15/2022] Open
Abstract
Materials' mechanical properties highly depend on their internal structures. Designing novel structure is an effective route to improve materials' performance. One-dimensional disordered (ODD) structure is a kind of particular structure in silicon carbide (SiC), which highly affects its mechanical properties. Herein, we show that SiC nanowires (NWs) containing ODD structure (with an occupation ratio of 32.6%) exhibit ultrahigh tensile strength and elastic strain, which are up to 13.7 GPa and 12% respectively, approaching the ideal theoretical limit. The ODD structural occupation ratio effect on mechanical properties of SiC NWs has been systematically studied and a saddle shaped tendency for the strength versus occupation ratio is firstly revealed. The strength increases with the increase of the ODD occupation ratio but decreases when the occupation ratio exceeds a critical value of ~ 32.6%, micro twins appear in the ODD region when the ODD segment increases and soften the ODD segment, finally results in a decrease of the strength.
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Affiliation(s)
- Xuejiao Zhang
- School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China
| | - Jing Wang
- School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China
| | - Zhenyu Yang
- Institute of Solid Mechanics, Beihang University, Beijing, 100191, People's Republic of China
| | - Xuke Tang
- School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China
| | - Yonghai Yue
- School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China.
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13
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Ma H, Yuan R, Wang J, Shi Y, Xu J, Chen K, Yu L. Cylindrical Line-Feeding Growth of Free-Standing Silicon Nanohelices as Elastic Springs and Resonators. NANO LETTERS 2020; 20:5072-5080. [PMID: 32520566 DOI: 10.1021/acs.nanolett.0c01265] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Three-dimensional (3D) construction of free-standing silicon (Si) nanohelices has been a formidable challenge for planar lithography and etching technology. We here demonstrate a convenient 3D growth and integration of Si nanohelices (SiNHs) upon bamboolike cylinders with corrugated sidewall grooves, where the indium catalyst droplets grow around the cylinders in a helical fashion, while consuming precoated amorphous Si (a-Si) thin film to produce crystalline Si nanowires on the sidewalls. At the end of each groove cycle, the droplets are enforced to linefeed/switch into the neighbor groove to continue a spiral growth of SiNHs with readily tunable diameter, pitch, aspect-ratio, and chiral/achiral symmetries. In addition, the SiNHs can be reliably released as free-standing units to serve as elastic links, supports and vibrational resonators. These results highlight the unexplored potential of high precision 3D self-assembly growth in constructing a wide range of sophisticated electromechanical, sensor, and optoelectronic functionalities.
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Affiliation(s)
- Haiguang Ma
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Rongrong Yuan
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Yi Shi
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P.R. China
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14
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Sun Y, Dong T, Yu L, Xu J, Chen K. Planar Growth, Integration, and Applications of Semiconducting Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903945. [PMID: 31746050 DOI: 10.1002/adma.201903945] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Revised: 10/05/2019] [Indexed: 06/10/2023]
Abstract
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
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Affiliation(s)
- Ying Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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15
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Ma H, Xu J, Chen K, Yu L. Synergetic effect in rolling GaIn alloy droplets enables ultralow temperature growth of silicon nanowires at 70 °C on plastics. NANOSCALE 2020; 12:8949-8957. [PMID: 32267283 DOI: 10.1039/d0nr01283a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ultralow temperature growth of silicon nanowires (SiNWs) directly upon cheap plastics is highly desirable for building high performance soft logics and sensors based on mature Si technology. In this work, a low temperature growth of SiNWs at only 70 °C has been demonstrated for the first time, upon polyethylene terephthalate plastics, by using gallium-indium (GaIn) alloy droplets that consume an amorphous Si (a-Si) layer as the precursor. The GaIn alloy droplets enable a beneficial synergetic effect that helps not only to reduce the melting temperature, but also to install a protective Gibbs adsorption layer of In atoms, which are critical to stabilize the rolling catalyst droplet, against otherwise rapid diffusion loss of Ga into the a-Si matrix. Ultra-long SiNWs can be batch-produced with a precise location and preferred elastic geometry, which paves the way for large scale integration. At <70 °C, a transition from rolling to sprawling dynamics is observed by in situ scanning electron microscopy, caused by reduced diffusion transport and rapid formation of discrete nuclei in the alloy droplet, which provides the basis for continuous growth of SiNWs. This unique capability and critical new understanding open the way for integrating high quality c-Si electronics directly over flexible, lightweight and extremely low cost plastics.
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Affiliation(s)
- Haiguang Ma
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
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16
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Huang S, Zhang B, Shao Z, He L, Zhang Q, Jie J, Zhang X. Ultraminiaturized Stretchable Strain Sensors Based on Single Silicon Nanowires for Imperceptible Electronic Skins. NANO LETTERS 2020; 20:2478-2485. [PMID: 32142295 DOI: 10.1021/acs.nanolett.9b05217] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Miniaturized stretchable strain sensors are key components in E-skins for applications such as personalized health-monitoring, body motion perception, and human-machine interfaces. However, it remains a big challenge to fabricate miniaturized stretchable strain sensors with high imperceptibility. Here, we reported for the first time novel ultraminiaturized stretchable strain sensors based on single centimeter-long silicon nanowires (cm-SiNWs). With the diameter of the active materials even smaller than that of spider silks, these sensors are highly imperceptible. They exhibit a large strain sensing range (>45%) and a high durability (>10 000 cycles). Their optimum strain sensing ranges could be modulated by controlling the prestrains of the stretchable cm-SiNWs. On the basis of this capability, sensors with appropriate sensing ranges were chosen to respectively monitor large and subtle human motions including joint motion, swallow, and touch. The strategy of applying single cm-SiNWs in stretchable sensors would open new doors to fabricate ultraminiaturized stretchable devices.
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Affiliation(s)
- Siyi Huang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Bingchang Zhang
- School of Optoelectronic Science and Engineering, Soochow University, Suzhou, Jiangsu 215006, People's Republic of China
| | - Zhibin Shao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Le He
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Qiao Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Jiansheng Jie
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Xiaohong Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
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17
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Zhao Y, Li L, Liu S, Wang J, Xu J, Shi Y, Chen K, Roca I Cabarrocas P, Yu L. Germanium quantum dot infrared photodetectors addressed by self-aligned silicon nanowire electrodes. NANOTECHNOLOGY 2020; 31:145602. [PMID: 31860876 DOI: 10.1088/1361-6528/ab647e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Germanium quantum dots (GeQDs), addressed by self-aligned and epitaxial silicon nanowires (SiNWs) as electrodes, represent the most fundamental and the smallest units that can be integrated into Si optoelectronics for 1550 nm wavelength detection. In this work, individual GeQD photodetectors have been fabricated based on a low temperature self-condensation of uniform amorphous Si (a-Si)/a-Ge bilayers at 300 °C, led by rolling indium (In) droplets. Remarkably, the diameter of the GeQD nodes can be independently controlled to achieve wider GeQDs for maximizing infrared absorption with narrower SiNW electrodes to ensure a high quality Ge/Si hetero-epitaxial connection. Importantly, these hetero GeQD/SiNW photodetectors can be deployed into predesigned locations for scalable device fabrication. The photodetectors demonstrate a responsivity of 1.5 mA W-1 and a photoconductive gain exceeding 102 to the communication wavelength signals, which are related to the beneficial type-II Ge/Si alignment, gradient Ge/Si epitaxial transition and a larger QD/NW diameter ratio. These results indicate a new approach to batch-fabricate and integrate GeQDs for ultra-compact Si-compatible photodetection and imaging applications.
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Affiliation(s)
- Yaolong Zhao
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093 Nanjing, People's Republic of China
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18
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Xu K, Xiao X, Zhou W, Jiang X, Wei Q, Chen H, Deng Z, Huang J, Chen B, Ning Z. Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15414-15421. [PMID: 32159327 DOI: 10.1021/acsami.0c01744] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDs:Si heterojunction remains a challenge. In this work, we introduce an inverted structure photodetector based on n-type Si and p-type PbS CQDs. Compared with the existing normal structure photodetector with p-type Si and n-type PbS CQDs, it has a lower energy band offset that provides more efficient charge extraction for the device. With the help of Si wafer surface passivation and the Si doping density optimization, the device delivers a high detectivity of 1.47 × 1011 Jones at 1540 nm without working bias, achieving the best performance in Si/PbS photodetectors in this region now. This work provides a new strategy to fabricate low-cost high-performance PbS CQDs photodetectors compatible with silicon arrays.
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Affiliation(s)
- Kaimin Xu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Xiongbin Xiao
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenjia Zhou
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Xianyuan Jiang
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Qi Wei
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Hao Chen
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Zhuo Deng
- School of Information Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Jian Huang
- School of Information Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Baile Chen
- School of Information Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
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19
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Xue Z, Song H, Rogers JA, Zhang Y, Huang Y. Mechanically-Guided Structural Designs in Stretchable Inorganic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1902254. [PMID: 31348578 DOI: 10.1002/adma.201902254] [Citation(s) in RCA: 78] [Impact Index Per Article: 19.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2019] [Revised: 05/27/2019] [Indexed: 06/10/2023]
Abstract
Over the past decade, the area of stretchable inorganic electronics has evolved very rapidly, in part because the results have opened up a series of unprecedented applications with broad interest and potential for impact, especially in bio-integrated systems. Low modulus mechanics and the ability to accommodate extreme mechanical deformations, especially high levels of stretching, represent key defining characteristics. Most existing studies exploit structural material designs to achieve these properties, through the integration of hard inorganic electronic components configured into strategic 2D/3D geometries onto patterned soft substrates. The diverse structural geometries developed for stretchable inorganic electronics are summarized, covering the designs of functional devices and soft substrates, with a focus on fundamental principles, design approaches, and system demonstrations. Strategies that allow spatial integration of 3D stretchable device layouts are also highlighted. Finally, perspectives on the remaining challenges and open opportunities are provided.
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Affiliation(s)
- Zhaoguo Xue
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Honglie Song
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - John A Rogers
- Departments of Materials Science and Engineering, Biomedical Engineering, Neurological Surgery, Chemistry, Mechanical Engineering Electrical Engineering and Computer Science, Simpson Querrey Institute and Feinberg Medical School, Center for Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA
| | - Yihui Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Yonggang Huang
- Departments of Mechanical Engineering, Civil and Environmental Engineering, and Materials Science and Engineering, Center for Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA
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20
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Dong T, Sun Y, Zhu Z, Wu X, Wang J, Shi Y, Xu J, Chen K, Yu L. Monolithic Integration of Silicon Nanowire Networks as a Soft Wafer for Highly Stretchable and Transparent Electronics. NANO LETTERS 2019; 19:6235-6243. [PMID: 31415178 DOI: 10.1021/acs.nanolett.9b02291] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Assembling nanoscale building blocks into an orderly network with a programmable layout and channel designs represents a critical capability to enable a wide range of stretchable electronics. Here, we demonstrate the growth-in-place integration of silicon nanowire (SiNW) springs into highly stretchable, transparent, and quasicontinuous functional networks with a close to unity interconnection among the discrete electrode joints because of a unique double-lane/double-step guiding edge design. The SiNW networks can be reliably transferred to a soft elastomer substrate, conformally attached to highly curved surfaces, or deployed as self-supporting/movable membranes suspended over voids. A high stretchability of >40% is achieved for the SiNW network on an elastomer, which can be employed as a transparent and semiconducting thin-film material endowed with a high carrier mobility of >50 cm2/(V s), Ion/Ioff ratio >104, and a tunable transmission of >80% over a wide spectrum range. Reversibly stretchable and bendable sensors based on the SiNW network have been successfully demonstrated, where the local strain distribution within the spring network can be directly observed and analyzed by finite element simulations. This SiNW network has a unique potential to eventually establish a new generically purposed waferlike platform for constructing soft electronics with Si-based hard performances.
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Affiliation(s)
- Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Ying Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Zhimin Zhu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Xiaoxiang Wu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Yi Shi
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
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21
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Zhang T, Wang J, Yu L, Xu J, Roca I Cabarrocas P. Advanced radial junction thin film photovoltaics and detectors built on standing silicon nanowires. NANOTECHNOLOGY 2019; 30:302001. [PMID: 30849766 DOI: 10.1088/1361-6528/ab0e57] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Three-dimensional (3D) construction of radial junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells on standing silicon nanowires (SiNWs) is a promising strategy to maximize the light harvesting performance and improve the photocarrier collection in an optimized junction configuration. The unique light in-coupling and absorption behaviour in the antenna-like 3D photonic structures also necessitates a set of new theoretical models and simulation tools to design, predict and optimize the photovoltaic performance of radial junction solar cells, which can be rather different from planar junction solar cells. Recently, the performance of radial junction a-Si:H thin film solar cells has progressed steadily to a level comparable or even superior to that of their planar counterparts, with plenty of room for further improvement. This review will first address the growth strategy and critical parameter control of SiNWs produced via a plasma-assisted low-temperature vapour-liquid-solid procedure using low-melting-point metals as the catalyst. Then, the construction of high-performance radial junction thin film solar cells over the standing SiNW matrix, as well as their optimal structural designs, will be introduced. At the end, the new applications of 3D radial junction units will be summarized, which include, for example, the construction of very flexible, low-cost and efficient a-Si:H solar cells with the highest power-to-weight ratio, the demonstration of highly sensitive solar-blind photodetectors operating at the ultraviolet wavelength spectrum and the development of novel biomimetic radial tandem junction photodetectors with an intrinsic red-green-blue (RGB) colour distinguishing capability.
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Affiliation(s)
- Ting Zhang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
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22
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Ben-Zvi R, Burrows H, Schvartzman M, Bitton O, Pinkas I, Kaplan-Ashiri I, Brontvein O, Joselevich E. In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy. ACS NANO 2019; 13:5572-5582. [PMID: 30995393 PMCID: PMC6994061 DOI: 10.1021/acsnano.9b00538] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2019] [Accepted: 04/17/2019] [Indexed: 06/09/2023]
Abstract
The challenge of nanowire assembly is still one of the major obstacles toward their efficient integration into functional systems. One strategy to overcome this obstacle is the guided growth approach, in which the growth of in-plane nanowires is guided by epitaxial and graphoepitaxial relations with the substrate to yield dense arrays of aligned nanowires. This method relies on crystalline substrates which are generally expensive and incompatible with silicon-based technologies. In this work, we expand the guided growth approach into noncrystalline substrates and demonstrate the guided growth of horizontal nanowires along straight and arbitrarily shaped amorphous nanolithographic open guides on silicon wafers. Nanoimprint lithography is used as a high-throughput method for the fabrication of the high-resolution guiding features. We first grow five different semiconductor materials (GaN, ZnSe, CdS, ZnTe, and ZnO) along straight ridges and trenches, demonstrating the generality of this method. Through crystallographic analysis we find that despite the absence of any epitaxial relations with the substrate, the nanowires grow as single crystals in preferred crystallographic orientations. To further expand the guided growth approach beyond straight nanowires, GaN and ZnSe were grown also along curved and kinked configurations to form different shapes, including sinusoidal and zigzag-shaped nanowires. Photoluminescence and cathodoluminescence were used as noninvasive tools to characterize the sine wave-shaped nanowires. We discuss the similarities and differences between in-plane nanowires grown by epitaxy/graphoepitaxy and artificial epitaxy in terms of generality, morphology, crystallinity, and optical properties.
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Affiliation(s)
- Regev Ben-Zvi
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Hadassah Burrows
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Mark Schvartzman
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ora Bitton
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Iddo Pinkas
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ifat Kaplan-Ashiri
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Olga Brontvein
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ernesto Joselevich
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
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23
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He Z, Zhou G, Byun JH, Lee SK, Um MK, Park B, Kim T, Lee SB, Chou TW. Highly stretchable multi-walled carbon nanotube/thermoplastic polyurethane composite fibers for ultrasensitive, wearable strain sensors. NANOSCALE 2019; 11:5884-5890. [PMID: 30869716 DOI: 10.1039/c9nr01005j] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Here, we report a novel highly sensitive wearable strain sensor based on a highly stretchable multi-walled carbon nanotube (MWCNT)/Thermoplastic Polyurethane (TPU) fiber obtained via a wet spinning process. The MWCNT/TPU fiber showed the highest tensile strength and ultra-high sensitivity with a gauge factor (GF) of approximately 2800 in the strain range of 5-100%. Due to its high strain sensitivity of conductivity, this CNT-reinforced composite fiber was able to be used to monitor the weight and shape of an object based on the 2D mapping of resistance changes. Moreover, the composite fiber was able to be stitched onto a highly stretchable elastic bandage using a sewing machine to produce a wearable strain sensor for the detection of diverse human motions. We also demonstrated the detection of finger motion by fabricating a smart glove at the joints. Due to its scalable production process, high stretchability and ultrasensitivity, the MWCNT/TPU fiber may open a new avenue for the fabrication of next-generation stretchable textile-based strain sensors.
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Affiliation(s)
- Zuoli He
- Composites Research Division, Korea Institute of Materials Science, 797 Changwon-daero, Changwon, Gyeongnam 51508, South Korea.
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Zhao Y, Ma H, Dong T, Wang J, Yu L, Xu J, Shi Y, Chen K, Roca I Cabarrocas P. Nanodroplet Hydrodynamic Transformation of Uniform Amorphous Bilayer into Highly Modulated Ge/Si Island-Chains. NANO LETTERS 2018; 18:6931-6940. [PMID: 30346786 DOI: 10.1021/acs.nanolett.8b02847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Geometric and compositional modulations are the principal parameters of control to tailor the band profile in germanium/silicon (Ge/Si) heteronanowires (NWs). This has been achieved mainly by alternating the feeding precursors during a uniaxial growth of Ge/Si NWs. In this work, a self-automated growth of Ge/Si hetero island-chain nanowires (hiNWs), consisting of wider c-Ge islands connected by thinner c-Si chains, has been accomplished via an indium (In) droplet-mediated transformation of uniform amorphous a-Si/a-Ge bilayer thin films. The surface-running In droplet enforces a circulative hydrodynamics in the nanoscale droplet, which can modulate the absorption depth into the amorphous bilayer and enable a single-run growth of a superlattice-like hiNWs without the need for any external manipulation. Meanwhile, the separation and accumulation of electrons and holes in the phase-modulated Ge/Si superlattice leads to a modulated surface potential profile that can be directly resolved by Kelvin probe force microscopy. This simple self-assembly growth and modulation dynamics can help to establish a powerful new concept or strategy to tailor and program the geometric and compositional profiles of more complex hetero nanowire structures, as promising building blocks to develop advanced nanoelectronics or optoelectronics.
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Affiliation(s)
- Yaolong Zhao
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Haiguang Ma
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
- LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau , France
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Yi Shi
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures , Nanjing University , 210093 Nanjing , China
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