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Zhang X, Zhang F, Yi R, Wang N, Su Z, Zhang M, Zhao B, Li Z, Qu J, M Cairney J, Lu Y, Zhao J, Gan X, Tan HH, Jagadish C, Fu L. Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays. LIGHT, SCIENCE & APPLICATIONS 2024; 13:230. [PMID: 39227364 PMCID: PMC11372134 DOI: 10.1038/s41377-024-01570-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Revised: 07/26/2024] [Accepted: 08/08/2024] [Indexed: 09/05/2024]
Abstract
Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO2 mask interface, stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm-2 per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.
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Affiliation(s)
- Xutao Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072, Xi'an, China
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Jiangtao Qu
- Australian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia
| | - Julie M Cairney
- Australian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, The Australian National University, Canberra, ACT 2600, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
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2
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Dubrovskii VG, Leshchenko ED. Interplay of Kinetic and Thermodynamic Factors in the Stationary Composition of Vapor-Liquid-Solid IIIV xV 1-x Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1333. [PMID: 39195371 DOI: 10.3390/nano14161333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2024] [Revised: 08/03/2024] [Accepted: 08/06/2024] [Indexed: 08/29/2024]
Abstract
Compositional control over vapor-liquid-solid III-V ternary nanowires based on group V intermix (VLS IIIVxV1-x NWs) is complicated by the presence of a catalyst droplet with extremely low and hence undetectable concentrations of group V atoms. The liquid-solid and vapor-solid distributions of IIIVxV1-x NWs at a given temperature are influenced by the kinetic parameters (supersaturation and diffusion coefficients in liquid, V/III flux ratio in vapor), temperature and thermodynamic constants. We analyze the interplay of the kinetic and thermodynamic factors influencing the compositions of VLS IIIVxV1-x NWs and derive a new vapor-solid distribution that contains only one parameter of liquid, the ratio of the diffusion coefficients of dissimilar group V atoms. The unknown concentrations of group V atoms in liquid have no influence on the NW composition at high enough levels of supersaturation in liquid. The simple analytic shape of this vapor-solid distribution is regulated by the total V/III flux ratio in vapor. Calculating the temperature-dependent desorption rates, we show that the purely kinetic regime of the liquid-solid growth occurs for VLS IIIVxV1-x NWs in a wide range of conditions. The model fits the data well on the vapor-solid distributions of VLS InPxAs1-x and GaPxAs1-x NWs and can be used for understanding and controlling the compositions of any VLS IIIVxV1-x NWs, as well as modeling the compositional profiles across NW heterostructures in different material systems.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Egor D Leshchenko
- Submicron Heterostructures for Microelectronics, Research and Engineering Center RAS, Politekhnicheskaya Street, 26, 194021 St. Petersburg, Russia
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3
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Lv Q, Shen X, Li X, Meng Y, Yu KM, Guo P, Xiao L, Ho JC, Duan X, Duan X. On-Wire Design of Axial Periodic Halide Perovskite Superlattices for High-Performance Photodetection. ACS NANO 2024; 18:18022-18035. [PMID: 38934514 DOI: 10.1021/acsnano.4c05205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
Precise synthesis of all-inorganic lead halide perovskite nanowire heterostructures and superlattices with designable modulation of chemical compositions is essential for tailoring their optoelectronic properties. Nevertheless, controllable synthesis of perovskite nanostructure heterostructures remains challenging and underexplored to date. Here, we report a rational strategy for wafer-scale synthesis of one-dimensional periodic CsPbCl3/CsPbI3 superlattices. We show that the highly parallel array of halide perovskite nanowires can be prepared roughly as horizontally guided growth on an M-plane sapphire. A periodic patterning of the sapphire substrate enables position-selective ion exchange to obtain highly periodic CsPbCl3/CsPbI3 nanowire superlattices. This patterning is further confirmed by micro-photoluminescence investigations, which show that two separate band-edge emission peaks appear at the interface of a CsPbCl3/CsPbI3 heterojunction. Additionally, compared with the pure CsPbCl3 nanowires, photodetectors fabricated using these periodic heterostructure nanowires exhibit superior photoelectric performance, namely, high ION/IOFF ratio (104), higher responsivity (49 A/W), and higher detectivity (1.51 × 1013 Jones). Moreover, a spatially resolved visible image sensor based on periodic nanowire superlattices is demonstrated with good imaging capability, suggesting promising application prospects in future photoelectronic imaging systems. All these results based on the periodic CsPbCl3/CsPbI3 nanowire superlattices provides an attractive material platform for integrated perovskite devices and circuits.
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Affiliation(s)
- Qihang Lv
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xia Shen
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - Xuyang Li
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Kin Man Yu
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Pengfei Guo
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - Liantuan Xiao
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Xidong Duan
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, United States
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4
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Dubrovskii VG. Self-Consistent Model for the Compositional Profiles in Vapor-Liquid-Solid III-V Nanowire Heterostructures Based on Group V Interchange. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:821. [PMID: 38786777 PMCID: PMC11123684 DOI: 10.3390/nano14100821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 04/29/2024] [Accepted: 05/04/2024] [Indexed: 05/25/2024]
Abstract
Due to the very efficient relaxation of elastic stress on strain-free sidewalls, III-V nanowires offer almost unlimited possibilities for bandgap engineering in nanowire heterostructures by using material combinations that are attainable in epilayers. However, axial nanowire heterostructures grown using the vapor-liquid-solid method often suffer from the reservoir effect in a catalyst droplet. Control over the interfacial abruptness in nanowire heterostructures based on the group V interchange is more difficult than for group-III-based materials, because the low concentrations of highly volatile group V atoms cannot be measured after or during growth. Here, we develop a self-consistent model for calculations of the coordinate-dependent compositional profiles in the solid and liquid phases during the vapor-liquid-solid growth of the axial nanowire heterostructure Ax0B1-x0C/Ax1B1-x1C with any stationary compositions x0 and x1. The only assumption of the model is that the growth rates of both binaries AC and BC are proportional to the concentrations of group V atoms A and B in a catalyst droplet, requiring high enough supersaturations in liquid phase. The model contains a minimum number of parameters and fits quite well the data on the interfacial abruptness across double heterostructures in GaP/GaAsxP1-x/GaP nanowires. It can be used for any axial III-V nanowire heterostructures obtained through the vapor-liquid-solid method. It forms a basis for further developments in modeling the complex growth process and suppression of the interfacial broadening caused by the reservoir effect.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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5
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Jeong HW, Ajay A, Döblinger M, Sturm S, Gómez Ruiz M, Zell R, Mukhundhan N, Stelzner D, Lähnemann J, Müller-Caspary K, Finley JJ, Koblmüller G. Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices. ACS APPLIED NANO MATERIALS 2024; 7:3032-3041. [PMID: 38357219 PMCID: PMC10863613 DOI: 10.1021/acsanm.3c05392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/21/2023] [Accepted: 12/26/2023] [Indexed: 02/16/2024]
Abstract
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region. Structural, compositional, and 3D-tomographic characterizations affirm the desired directional growth along the NW axis with no radial growth observed. Clearly distinct luminescence from the InGaAs active region is demonstrated, where tunable array-geometry parameters and In content up to 20% are further investigated. Based on the underlying twin-induced growth mode, we further describe the facet-dependent shape and interface evolution of the InGaAs segment and its direct correlation with emission energy.
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Affiliation(s)
- Hyowon W. Jeong
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Akhil Ajay
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Markus Döblinger
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Sebastian Sturm
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Mikel Gómez Ruiz
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Richard Zell
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Nitin Mukhundhan
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Daniel Stelzner
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Jonas Lähnemann
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Knut Müller-Caspary
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Jonathan J. Finley
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Gregor Koblmüller
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
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6
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Schmiedeke P, Döblinger M, Meinhold-Heerlein MA, Doganlar C, Finley JJ, Koblmüller G. Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality. NANOTECHNOLOGY 2023; 35:055601. [PMID: 37879325 DOI: 10.1088/1361-6528/ad06ce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
Ternary GaAsSb nanowires (NW) are key materials for integrated high-speed photonic applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high-quality properties for controlled absorption, mode confinement and waveguiding are much desired. Here, we demonstrate a unique high-temperature (high-T >650 °C) molecular beam epitaxial (MBE) approach to realize self-catalyzed GaAsSb NWs site-selectively on Si with high aspect-ratio and non-tapered morphologies under antimony (Sb)-saturated conditions. While hitherto reported low-moderate temperature growth processes result in early growth termination and inhomogeneous morphologies, the non-tapered nature of NWs under high-T growth is independent of the supply rates of relevant growth species. Analysis of dedicated Ga-flux and growth time series, allows us to pinpoint the microscopic mechanisms responsible for the elimination of tapering, namely concurrent vapor-solid, step-flow growth along NW side-facets enabled by enhanced Ga diffusion under the high-T growth. Performing growth in an Sb-saturated regime, leads to high Sb-content in VLS-GaAsSb NW close to 30% that is independent of Ga-flux. This independence enables multi-step growth via sequentially increased Ga-flux to realize uniform and very long (>7μm) GaAsSb NWs. The excellent properties of these NWs are confirmed by a completely phase-pure, twin-free zincblende (ZB) crystal structure, a homogeneous Sb-content along the VLS-GaAsSb NW growth axis, along with remarkably narrow, single-peak low-temperature photoluminescence linewidth (<15 meV) at wavelengths of ∼1100-1200 nm.
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Affiliation(s)
- P Schmiedeke
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - M Döblinger
- Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany
| | - M A Meinhold-Heerlein
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - C Doganlar
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - J J Finley
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - G Koblmüller
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
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7
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Zhang X, Yi R, Zhao B, Li C, Li L, Li Z, Zhang F, Wang N, Zhang M, Fang L, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C, Gan X. Vertical Emitting Nanowire Vector Beam Lasers. ACS NANO 2023. [PMID: 37191338 DOI: 10.1021/acsnano.3c02786] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Due to the peculiar structured light field with spatially variant polarizations on the same wavefront, vector beams (VBs) have sparked research enthusiasm in developing advanced super-resolution imaging and optical communications techniques. A compact VB nanolaser is intriguing for VB applications in miniaturized photonic integrated circuits. However, determined by the diffraction limit of light, it is a challenge to realize a VB nanolaser in the subwavelength scale because the VB lasing modes should have laterally structured distributions. Here, we demonstrate a VB nanolaser made from a 300 nm thick InGaAs/GaAs nanowire (NW). To select the high-order VB lasing mode, a standing NW as-grown from the selective-area-epitaxial (SAE) growth process is utilized, which has a bottom donut-shaped interface with the silicon oxide growth substrate. With this donut-shaped interface as one of the reflective mirrors of the nanolaser cavity, the VB lasing mode has the lowest threshold. Experimentally, a single-mode VB lasing mode with a donut-shaped amplitude and azimuthally cylindrical polarization distribution is obtained. Together with the high yield and uniformity of the SAE-grown NWs, our work provides a straightforward and scalable path toward cost-effective co-integration of VB nanolasers on potential photonic integrated circuits.
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Affiliation(s)
- Xutao Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
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8
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Jeong HW, Ajay A, Yu H, Döblinger M, Mukhundhan N, Finley JJ, Koblmüller G. Sb-Mediated Tuning of Growth- and Exciton Dynamics in Entirely Catalyst-Free GaAsSb Nanowires. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207531. [PMID: 36670090 DOI: 10.1002/smll.202207531] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Vapor-liquid-solid (VLS) growth is the mainstream method in realizing advanced semiconductor nanowires (NWs), as widely applied to many III-V compounds. It is exclusively explored also for antimony (Sb) compounds, such as the relevant GaAsSb-based NW materials, although morphological inhomogeneities, phase segregation, and limitations in the supersaturation due to Sb strongly inhibit their growth dynamics. Fundamental advances are now reported here via entirely catalyst-free GaAsSb NWs, where particularly the Sb-mediated effects on the NW growth dynamics and physical properties are investigated in this novel growth regime. Remarkably, depending on GaAsSb composition and nature of the growth surface, both surfactant and anti-surfactant action is found, as seen by transitions between growth acceleration and deceleration characteristics. For threshold Sb-contents up to 3-4%, adatom diffusion lengths are increased ≈sevenfold compared to Sb-free GaAs NWs, evidencing the significant surfactant effect. Furthermore, microstructural analysis reveals unique Sb-mediated transitions in compositional structure, as well as substantial reduction in twin defect density, ≈tenfold over only small compositional range (1.5-6% Sb), exhibiting much larger dynamics as found in VLS-type GaAsSb NWs. The effect of such extended twin-free domains is corroborated by ≈threefold increases in exciton lifetime (≈4.5 ns) due to enlarged electron-hole pair separation in these phase-pure NWs.
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Affiliation(s)
- Hyowon W Jeong
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Akhil Ajay
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Haiting Yu
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Markus Döblinger
- Department of Chemistry, Ludwig-Maximilians-Universität München, 81377, Munich, Germany
| | - Nitin Mukhundhan
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Jonathan J Finley
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Gregor Koblmüller
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
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9
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Xu H, Xu J, Jiang M, Liu M, Tang K, Kan C, Shi D. Exciton-polariton light-emitting diode based on a single ZnO superlattice microwire heterojunction with performance enhanced by Rh nanostructures. Phys Chem Chem Phys 2023; 25:5836-5848. [PMID: 36745472 DOI: 10.1039/d2cp05446a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
One-dimensional (1D) wirelike superlattice micro/nanostructures have received considerable attention for potential applications due to their versatility and capability for modulating optical and electrical characteristics. In this study, 1D superlattice microwires (MWs), which are made of undoped ZnO and Ga-doped ZnO with periodic and alternating crystalline layers (ZnO/ZnO:Ga), were synthesized individually. Under optical excitation, a series of resonance peaks in the photoluminescence spectrum can be ascribed to polariton emission, which originates from the coupling interaction of the 1D photonic crystal and confined excitons along the wire direction. Using a p-type GaN layer as the hole transport layer, a kind of waveguide light source based on an individual ZnO/ZnO:Ga superlattice MW was proposed and constructed. By analysing the spatially resolved electroluminescence spectra, the observed multipeak was ascribed to exciton-polariton emission with a vacuum Rabi splitting of about 275 meV. Cladding with Rh nanostructures gives rise to appropriate ultraviolet plasmons, and the Rabi splitting energy of our device was enhanced up to 413 meV. The exciton-polariton properties were further examined using angle-resolved electroluminescence measurements. Therefore, individual superlattice MWs can act as optical microresonators to achieve photon-exciton coupling with a large Rabi splitting energy. The experimental results indicate that an individual ZnO/ZnO:Ga superlattice MW can be generally used in developing exciton-polariton luminescence/lasing light sources, particularly for constructing low-threshold/thresholdless lasers toward pragmatic applications.
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Affiliation(s)
- Haiying Xu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China. .,College of Mathematics and Physics, Nanjing Institute of Technology, Nanjing, 211167, China
| | - Juan Xu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Mingming Jiang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Maosheng Liu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Kai Tang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Caixia Kan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Daning Shi
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
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10
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Grain N, Kim S. Insight into refractive index modulation as route to enhanced light coupling in semiconductor nanowires. OPTICS LETTERS 2023; 48:227-230. [PMID: 36638424 DOI: 10.1364/ol.478419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 11/29/2022] [Indexed: 06/17/2023]
Abstract
Recent developments in chemical processes to prepare single-crystalline nanowire (NW) superlattices (SLs) have discovered a range of unique nanophotonic properties. In particular, diameter-modulated silicon NW geometric SLs (GSLs) have shown their ability to produce complex interference effects through which enhanced light manipulation is achieved. Here, we re-imagine the origin of the complex interference effects occurring in shallow-modulated GSLs and present a refractive index modulation as a key deciding factor. We introduce the design of a NW refractive index SL (ISL), a hypothetical uniform-diameter NW in which the refractive index is periodically modulated, and explain the coupling effect between Mie resonance and bound guided state. We apply the ISL concept to other NW SL systems and suggest potential routes to bring substantial enhancements in lasing activities.
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11
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Kang Y, Lin F, Tang J, Dai Q, Hou X, Meng B, Wang D, Wang L, Wei Z. Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires. Phys Chem Chem Phys 2023; 25:1248-1256. [PMID: 36530045 DOI: 10.1039/d2cp04630j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Antimonide-based ternary III-V nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.3-1.55 μm spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) substrates by molecular beam epitaxy (MBE). In addition, the morphologies and tunable wavelengths of the GaAs/Ga(As)Sb/GaAs SQWs were adjusted by interrupting the Ga droplets and changing the growth temperatures and V/III ratios. The four morphologies of the GaAs/Ga(As)Sb/GaAs SQW NWs were observed by scanning electron microscopy (SEM). The microscale lattice structure related to the incorporation of Sb in GaAs/Ga(As)Sb/GaAs SQWs was studied by Raman spectroscopy. The crystal quality of the GaAs/Ga(As)Sb/GaAs SQW NWs was researched by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the optical properties of the GaAs/Ga(As)Sb/GaAs SQWs were investigated by photoluminescence (PL) spectroscopy. The PL spectra showed the peak emission wavelength range of ∼818 nm (GaAs) to ∼1628 nm (GaSb) at 10 K. This study provides an approach to enhance the effective control of the morphology, structure and wavelength of quantum well or core-shell NWs.
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Affiliation(s)
- Yubin Kang
- College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou, 310018, P. R. China. .,State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China. .,Semiconductor Laser and Application Laboratory, Zhongshan Institute of Changchun University of Science and Technology, Zhongshan, 528437, P. R. China
| | - Qian Dai
- Southwest Institute of Technical Physics, Chengdu, 610041, P. R. China
| | - Xiaobing Hou
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Bingheng Meng
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Dongyue Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Le Wang
- College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou, 310018, P. R. China.
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
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12
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Shen X, Li P, Guo P, Yu KM. On-wire bandgap engineering via a magnetic-pulled CVD approach and optoelectronic applications of one-dimensional nanostructures. NANOTECHNOLOGY 2022; 33:432002. [PMID: 35816940 DOI: 10.1088/1361-6528/ac800b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Accepted: 07/11/2022] [Indexed: 06/15/2023]
Abstract
Since the emergence of one-dimensional nanostructures, in particular the bandgap-graded semiconductor nanowires/ribbons or heterostructures, lots of attentions have been devoted to unraveling their intriguing properties and finding applications for future developments in optical communications and integrated optoelectronic devices. In particular, the ability to modulate the bandgap along a single nanostructure greatly enhances their functionalities in optoelectronics, and hence these studies are essential to pave the way for future high-integrated devices and circuits. Herein, we focus on a brief review on recent advances about the synthesis through a magnetic-pulled chemical vapor deposition approach, crystal structure and the unique optical and electronic properties of on-nanostructures semiconductors, including axial nanowire heterostructures, asymmetrical/symmetric bandgap gradient nanowires, lateral heterostructure nanoribbons, lateral bandgap graded ribbons. Moreover, recent developments in applications using low-dimensional bandgap modulated structures, especially in bandgap-graded nanowires and heterostructures, are summarized, including multicolor lasers, waveguides, white-light sources, photodetectors, and spectrometers, where the main strategies and unique features are addressed. Finally, future outlook and perspectives for the current challenges and the future opportunities of one-dimensional nanostructures with bandgap engineering are discussed to provide a roadmap future development in the field.
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Affiliation(s)
- Xia Shen
- College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Pu Li
- College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Pengfei Guo
- College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Kin Man Yu
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong 999077, People's Republic of China
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13
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Yi R, Zhang X, Li C, Zhao B, Wang J, Li Z, Gan X, Li L, Li Z, Zhang F, Fang L, Wang N, Chen P, Lu W, Fu L, Zhao J, Tan HH, Jagadish C. Self-frequency-conversion nanowire lasers. LIGHT, SCIENCE & APPLICATIONS 2022; 11:120. [PMID: 35487898 PMCID: PMC9054850 DOI: 10.1038/s41377-022-00807-7] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 04/17/2022] [Accepted: 04/18/2022] [Indexed: 05/28/2023]
Abstract
Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III-V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.
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Affiliation(s)
- Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072, Xi'an, China.
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Zhiwen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200083, Shanghai, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, 100049, Beijing, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200083, Shanghai, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, 100049, Beijing, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, 201210, Shanghai, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
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14
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Nilsen JS, van Helvoort ATJ. Composition Analysis by STEM-EDX of Ternary Semiconductors by Internal References. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2022; 28:61-69. [PMID: 35177135 DOI: 10.1017/s1431927621013672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A practical method to determine the composition within ternary heterostructured semiconductor compounds using energy-dispersive X-ray spectroscopy in scanning transmission electron microscopy is presented. The method requires minimal external input factors such as user-determined or calculated sensitivity factors by incorporating a known compositional relationship, here a fixed stoichiometric ratio in III–V compound semiconductors. The method is demonstrated for three different systems; AlGaAs/GaAs, GaAsSb/GaAs, and InGaN/GaN with three different specimen geometries and compared to conventional quantification approaches. The method incorporates absorption effects influencing the composition analysis without the need to know the thickness of the specimen. Large variations in absorption conditions and assumptions regarding the reference area limit the accuracy of the developed method.
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Affiliation(s)
- Julie Stene Nilsen
- Department of Physics, Norwegian University of Science and Technology (NTNU)NO-7491, Trondheim, Norway
| | - Antonius T J van Helvoort
- Department of Physics, Norwegian University of Science and Technology (NTNU)NO-7491, Trondheim, Norway
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15
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Xia M, Ding Y, Sun T, Ma M. Design and analysis of an InGaAs/InGaAsP quantum well microlaser with longitudinal periodical strain distribution for single-mode lasing. APPLIED OPTICS 2022; 61:84-90. [PMID: 35200809 DOI: 10.1364/ao.443488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Accepted: 11/26/2021] [Indexed: 06/14/2023]
Abstract
Single-mode lasing for small size semiconductor laser is significantly important in the on-chip optical signal processing, data storage, and dense optical integrated systems. This paper presents new, to the best of our knowledge, single-mode quantum well microlasers by distributing periodical strain along the longitudinal laser cavity. The quantum transmission line modeling (Q-TLM) method is employed to establish the model for strained microlasers. The dynamic output of quantum well microlasers with longitudinal periodical strain (LPS) distribution is analyzed in the time and frequency domains, and it is found that the introduction of LPS significantly improves the single-mode output of quantum well microlasers by increasing the side mode suppression ratio (SMSR) from 8.44 to 28.29 dB. The study results confirm that well-controlled periodical strain along the longitudinal laser cavity provides an alternative routine for realizing single-mode lasing by strain engineering.
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16
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Zhang Y, Velichko AV, Fonseka HA, Parkinson P, Gott JA, Davis G, Aagesen M, Sanchez AM, Mowbray D, Liu H. Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement. NANO LETTERS 2021; 21:5722-5729. [PMID: 34181433 PMCID: PMC8289304 DOI: 10.1021/acs.nanolett.1c01461] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Revised: 06/25/2021] [Indexed: 06/13/2023]
Abstract
Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.
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Affiliation(s)
- Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
- Department
of Physics, Universität Paderborn, Warburger Straße 100, 33098 Paderborn, Germany
| | - Anton V. Velichko
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Patrick Parkinson
- School
Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
| | - James A. Gott
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - George Davis
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - Martin Aagesen
- Center for
Quantum Devices, Niels Bohr Institute, University
of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - David Mowbray
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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17
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Qian Y, Xu K, Cheng L, Li C, Wang X. Rapid, facile synthesis of InSb twinning superlattice nanowires with a high-frequency photoconductivity response. RSC Adv 2021; 11:19426-19432. [PMID: 35479246 PMCID: PMC9033618 DOI: 10.1039/d1ra01903a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2021] [Accepted: 05/24/2021] [Indexed: 01/09/2023] Open
Abstract
We present a self-seeded (with indium droplets) solution-liquid-solid (SLS) synthesis route for InSb nanowires (NWs) using commercially available precursors at a relatively low temperature of about 175 °C, which takes only 1 min upon the injection of reductant. Structural characterization reveals that the InSb nanowires are high quality and have twinning superlattice structures with periodically spaced twin planes along the growth direction of 〈111〉. Notably, we have measured an ultrafast conductivity lifetime in the NWs of just 9.1 ps utilizing time-resolved optical pump-terahertz probe (OPTP) spectroscopy, which may facilitate the development of high-frequency nanoscale integrated optoelectronic systems related to twinning superlattice structures.
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Affiliation(s)
- Yinyin Qian
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University Wuhu 241000 P. R. China
| | - Kaijia Xu
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University Wuhu 241000 P. R. China
| | - Lanjun Cheng
- University of Science and Technology of China Hefei 230026 P. R. China
| | - Cunxin Li
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University Wuhu 241000 P. R. China
| | - Xingchen Wang
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University Wuhu 241000 P. R. China
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18
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Zhang X, Yi R, Gagrani N, Li Z, Zhang F, Gan X, Yao X, Yuan X, Wang N, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C. Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers. ACS NANO 2021; 15:9126-9133. [PMID: 33970600 DOI: 10.1021/acsnano.1c02425] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.
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Affiliation(s)
- Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Nikita Gagrani
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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19
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Abstract
Near-infrared (NIR) luminescent materials have emerged as a growing field of interest, particularly for imaging and optics applications in biology, chemistry, and physics. However, the development of materials for this and other use cases has been hindered by a range of issues that prevents their widespread use beyond benchtop research. This review explores emerging trends in some of the most promising NIR materials and their applications. In particular, we focus on how a more comprehensive understanding of intrinsic NIR material properties might allow researchers to better leverage these traits for innovative and robust applications in biological and physical sciences.
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Affiliation(s)
- Christopher T. Jackson
- Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA, USA
| | - Sanghwa Jeong
- Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA, USA
| | | | - Markita P. Landry
- Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA, USA
- Innovative Genomics Institute (IGI), Berkeley, CA, USA
- California Institute for Quantitative Biosciences, QB3, University of California, Berkeley, CA, USA
- Chan-Zuckerberg Biohub, San Francisco, CA, USA
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20
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Wu S, Yi X, Tian S, Zhang S, Liu Z, Wang L, Wang J, Li J. Understanding homoepitaxial growth of horizontal kinked GaN nanowires. NANOTECHNOLOGY 2021; 32:095606. [PMID: 33212433 DOI: 10.1088/1361-6528/abcc24] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Epitaxial horizontal nanowires (NWs) have attracted much attention due to their easily large-scale integration. From the reported literature, epitaxial growth is usually driven by minimization of strain between NW and substrate, which governs the growth along with specific crystallographic orientation. Here, we report the first homoepitaxial growth of horizontal GaN NWs from a surface-directed vapor-liquid-solid growth method. The NWs grow along with six symmetry-equivalent 〈1-100〉 (m-axis) directions, exhibiting a random 60°/120° kinked configuration. Owing to homoepitaxial growth, strain could be eliminated. From the obtained results, we suggest that the formation the horizontal NWs, and their growth direction /orientation is not directly related to the strain minimization. A general rule based on the epitaxial relationship and potential low-index growth orientation is proposed for understanding the arrangement of epitaxial horizontal NWs. It is deduced that kinking of the horizontal NWs was attributed to unintentional guided growth determined by the roughness of the substrates' surface. This study provides an insight for a better understanding of the evolution of epitaxial horizontal NWs, especially for the growth direction/orientation.
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Affiliation(s)
- Shaoteng Wu
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Xiaoyan Yi
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Shuang Tian
- Jiangsu Key Laboratory for Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, People's Republic of China
| | - Shuo Zhang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Zhiqiang Liu
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Liancheng Wang
- State key Laboratory of High-Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha Hunan, 410083, People's Republic of China
| | - Junxi Wang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Jinmin Li
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
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21
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Ghasemi M, Leshchenko ED, Johansson J. Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires. NANOTECHNOLOGY 2021; 32:072001. [PMID: 33091889 DOI: 10.1088/1361-6528/abc3e2] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in fields as diverse as nanophotonics, nanoelectronics and medicine. After studying nanostructures consisting of elemental and binary compound semiconductors, scientists turned their attention to more complex systems-ternary nanowires. Composition control is key in these nanostructures since it enables bandgap engineering. The use of different combinations of compounds and different growth methods has resulted in numerous investigations. The aim of this review is to present a survey of the material systems studied to date, and to give a brief overview of the issues tackled and the progress achieved in nanowire composition tuning. We focus on ternary III x III1-x V nanowires (AlGaAs, AlGaP, AlInP, InGaAs, GaInP and InGaSb) and IIIV x V1-x nanowires (InAsP, InAsSb, InPSb, GaAsP, GaAsSb and GaSbP).
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Affiliation(s)
| | - Egor D Leshchenko
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
| | - Jonas Johansson
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
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22
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Ullah S, Pian S, Dai F, Wang Y, Ma Y, Yang Q. Single-Mode Semiconductor Nanowire Lasers With Coupled Cavities. Front Chem 2021; 8:631870. [PMID: 33520944 PMCID: PMC7843456 DOI: 10.3389/fchem.2020.631870] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2020] [Accepted: 12/14/2020] [Indexed: 11/13/2022] Open
Abstract
Semiconductor nanowires are one of the most fascinating topics over the past few decades. As miniaturized coherent light sources, semiconductor nanowires have been attracting tremendous attention in recent years for scientific and technological interest as potential ultra-compact, low cost, high efficiency, and low power consumption. Among different types of lasers, one-dimensional nanowires are of great interest as a promising material for next-generation nanophotonics and nanoelectronics applications due to their unique optical and electrical properties. Semiconductor nanowire lasers with single-mode output are vital in a variety of practical applications ranging from signal processing, spectroscopy, displays, optical sensing, on-chip communications, and biological studies. This article reviews the basic technology and research progress of single-mode semiconductor nanowire lasers. Afterward, the key methods and development of the different types of coupling to achieved single-mode laser output are elaborated. Finally, the challenges faced by each scheme are summarized.
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Affiliation(s)
- Salman Ullah
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Sijie Pian
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
| | - Fang Dai
- East China Institute of Optoelectronic Integrated Device, Suzhou, China
| | - Yilun Wang
- Institute of Navigation and Control Technology, China North Industries Group Corporation, Beijing, China
| | - Yaoguang Ma
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
| | - Qing Yang
- State Key Laboratory of Modern Optical Instrumentation, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
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23
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Koivusalo E, Hilska J, Galeti HVA, Galvão Gobato Y, Guina M, Hakkarainen T. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires. NANOTECHNOLOGY 2020; 31:465601. [PMID: 32750687 DOI: 10.1088/1361-6528/abac34] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As2 and As4, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs. Using As4 enhances the growth of NWs in the axial direction over a wide range of growth parameters and diminishes the tendency of Te and Sb to reduce the NW aspect ratio. By extending the axial growth parameter window, As4 allows growth of GaAsSb NWs with up to 47% in Sb composition. On the other hand, As2 favors sidewall growth which enhances the growth in the radial direction. Thus, the selection of As species is critical for tuning not only the NW dimensions, but also the incorporation mechanisms of dopants and ternary elements. Moreover, the commonly observed dependence of twinning on Te and Sb remains unaffected by the As species. By exploiting the extended growth window associated with the use of As4, enhanced Sb incorporation and optical emission up to 1400 nm wavelength range is demonstrated. This wavelength corresponds to the telecom E-band, which opens new prospects for this NW material system in future telecom applications while simultaneously enabling their integration to the silicon photonics platform.
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Affiliation(s)
- Eero Koivusalo
- Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland
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24
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Gustafsson A, Jiang N, Zheng C, Etheridge J, Gao Q, Tan HH, Jagadish C, Wong-Leung J. Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires. NANOTECHNOLOGY 2020; 31:424001. [PMID: 32583811 DOI: 10.1088/1361-6528/ab9fb3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present spatially and spectrally resolved emission from nanowires with a thin radial layer of GaAs embedded in AlGaAs barriers, grown radially around taper-free GaAs cores. The GaAs layers are thin enough to show quantization, and are quantum wells. Due to their shape, they are referred to as quantum well tubes (QWTs). We have investigated three different nominal QWT thicknesses: 1.5, 2.0, and 6.0 nm. They all show average emission spectra from the QWT with an energy spread corresponding to a thickness variation of ±30%. We observe no thickness gradient along the length of the nanowires. Individual NWs show a number of peaks, corresponding to different QW thicknesses. Apart from the thinnest QWT, the integrated emission from the QWTs shows homogeneous emission intensity along the NW. The thinnest QWTs show patchy emission patterns due to the incomplete coverage of the QWT. We observe a few NWs with larger diameters. The QWTs in these NWs show spatially resolved variations across the NW. An increase in the local thickness of the QWT at the corners blocks the diffusion of carriers from facet to facet, thereby enabling us to visualise the thickness variations of the radial quantum wells.
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Affiliation(s)
- Anders Gustafsson
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00, Lund, Sweden
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25
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Kim S, Cahoon JF. Geometric Nanophotonics: Light Management in Single Nanowires through Morphology. Acc Chem Res 2019; 52:3511-3520. [PMID: 31799833 DOI: 10.1021/acs.accounts.9b00515] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Comprehensive control of light-matter interactions at the nanoscale is increasingly important for the development of miniaturized light-based technologies that have applications ranging from information processing to sensing. Control of light in nanoscale structures-the realm of nanophotonics-requires precise control of geometry on a few-nanometer length scale. From a chemist's perspective, bottom-up growth of nanoscale materials from chemical precursors offers a unique opportunity to design structures atom-by-atom that exhibit desired properties. In this Account, we describe our efforts to create chemically and morphologically precise Si nanowires (NWs) with designed nanophotonic properties using a vapor-liquid-solid (VLS) growth process. A synthetic technique termed "Encoded Nanowire Growth and Appearance through VLS and Etching" (ENGRAVE) combines optimized VLS growth, dopant modulation, and dopant-dependent wet-chemical etching to produce NWs with precisely designed diameter modulations, yielding lithographic-like morphological control that can vary from sinusoids to fractals. The ENGRAVE NWs thus provide a versatile playground for coupling, trapping, and directing light in a nanoscale geometry. Previously, the nanophotonic functionality of NWs primarily relied on uniform-diameter structures that exhibit Mie scattering resonances and longitudinally oriented guided modes, two key photonic properties that typically cannot be utilized simultaneously due to their orthogonality. However, when the NW diameter is controllably modulated along the longitudinal axis on a scale comparable to the wavelength of light-a geometry we term a geometric superlattice (GSL)-we found that NWs can exhibit a much richer and tunable set of nanophotonic properties, as described herein. To understand these unique properties, we first summarize the basic optical properties of uniform-diameter NWs using Mie scattering theory and dispersion relations, and we describe both conventional and relatively new microscopy methods that experimentally probe the optical properties of single NWs. Next, delving into the properties of NW GSLs, we summarize their ability to couple a Mie resonance with a guided mode at a select wavevector (or wavelength) dictated by their geometric pitch. The coupling forms a bound guided state (BGS) with a standing wave profile, which allows a NW GSL to serve as a spectrally selective light coupler and to act as optical switch or sensor. We also summarize the capacity of a GSL to trap light by serving as an ultrahigh (theoretically infinite) quality factor optical cavity with an optical bound state in the continuum (BIC), in which destructive interference prevents coupling to and from the far field. Finally, we discuss a future research outlook for using ENGRAVE NWs for nanoscale light control. For instance, we highlight research avenues that could yield light-emitting devices by interfacing a NW-based BIC with emissive materials such as quantum dots, 2D materials, and hybrid perovskite. We also discuss the design of photonic band gaps, generation of high-harmonics with quasi-BIC structures, and the possibility for undiscovered nanophotonic properties and phenomena through more complex ENGRAVE geometric designs.
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Affiliation(s)
- Seokhyoung Kim
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - James F. Cahoon
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
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26
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Sumikura H, Zhang G, Takiguchi M, Takemura N, Shinya A, Gotoh H, Notomi M. Mid-Infrared Lasing of Single Wurtzite InAs Nanowire. NANO LETTERS 2019; 19:8059-8065. [PMID: 31638818 DOI: 10.1021/acs.nanolett.9b03249] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self-catalyst vapor-liquid-solid method and transferred to gold-deposited SiO2/Si substrates. Low-temperature microphotoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 μm (3850 cm-1 in frequency), which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks, while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.
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Affiliation(s)
- Hisashi Sumikura
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Guoqiang Zhang
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Masato Takiguchi
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Naotomo Takemura
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Akihiko Shinya
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Hideki Gotoh
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Masaya Notomi
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
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27
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Wang X, Pan D, Han Y, Sun M, Zhao J, Chen Q. Vis-IR Wide-Spectrum Photodetector at Room Temperature Based on p-n Junction-Type GaAs 1-xSb x/InAs Core-Shell Nanowire. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38973-38981. [PMID: 31576737 DOI: 10.1021/acsami.9b13559] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p-n heterojunction-type GaAs1-xSbx/InAs core-shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performance of the devices includes an ultralow dark current (32 pA at room temperature), a high response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I-V characteristics (the current rectification ratio being ∼178 in a voltage range of ±0.3 V). These results suggest that the GaAs1-xSbx/InAs core-shell nanowire devices are promising for applications in nanoelectronic devices, optoelectronic devices, and integrated optoelectronic devices.
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Affiliation(s)
- Xinzhe Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and College of Materials Science and Opto-Electronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Yuxiang Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Mei Sun
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and College of Materials Science and Opto-Electronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
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28
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Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
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Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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29
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Ren D, Ahtapodov L, van Helvoort ATJ, Weman H, Fimland BO. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. NANOTECHNOLOGY 2019; 30:294001. [PMID: 30917343 DOI: 10.1088/1361-6528/ab13ed] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.
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Affiliation(s)
- Dingding Ren
- Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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30
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Buyanova IA, Chen WM. Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology. NANOTECHNOLOGY 2019; 30:292002. [PMID: 30933933 DOI: 10.1088/1361-6528/ab1516] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.
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31
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Zhang Y, Davis G, Fonseka HA, Velichko A, Gustafsson A, Godde T, Saxena D, Aagesen M, Parkinson PW, Gott JA, Huo S, Sanchez AM, Mowbray DJ, Liu H. Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement. ACS NANO 2019; 13:5931-5938. [PMID: 31067033 PMCID: PMC7007272 DOI: 10.1021/acsnano.9b01775] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2019] [Accepted: 05/08/2019] [Indexed: 06/01/2023]
Abstract
Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures ( e. g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.
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Affiliation(s)
- Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - George Davis
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Anton Velichko
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Anders Gustafsson
- Solid
State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Tillmann Godde
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Dhruv Saxena
- The
Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Martin Aagesen
- Danish
Defence Research Center, Lautrupbjerg 1-5, 2750 Ballerup, Denmark
| | - Patrick W. Parkinson
- School
of Physics and Astronomy and the Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
| | - James A. Gott
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Suguo Huo
- London
Centre for Nanotechnology, University College
London, London WC1H 0AH, United Kingdom
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - David J. Mowbray
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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32
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Yip S, Shen L, Ho JC. Recent advances in III-Sb nanowires: from synthesis to applications. NANOTECHNOLOGY 2019; 30:202003. [PMID: 30625448 DOI: 10.1088/1361-6528/aafcce] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The excellent properties of III-V semiconductors make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.
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Affiliation(s)
- SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong Special Administrative Region of China, People's Republic of China. Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, People's Republic of China
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33
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Adams MJ, Jevtics D, Strain MJ, Henning ID, Hurtado A. High-frequency dynamics of evanescently-coupled nanowire lasers. Sci Rep 2019; 9:6126. [PMID: 30992501 PMCID: PMC6467891 DOI: 10.1038/s41598-019-42526-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2018] [Accepted: 04/02/2019] [Indexed: 11/30/2022] Open
Abstract
We analyse the dynamics and conditions for stability in an array of two laterally-coupled nanowire lasers in terms of their separation, difference in resonant frequencies and pumping rate under conditions of weak coupling. We find that the regions of stability are very small and are found close to zero frequency offset between the lasers. Outside these regions various forms of instability including periodic oscillation, chaos and complex dynamics are predicted. Importantly, the analysis of the frequency of periodic oscillations for realistic laser separations and pumping yields values of order 100 GHz thus underlining the significant potential of nanowire laser arrays for ultra-high frequency on-chip systems with very low foot-print and energy requirements.
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Affiliation(s)
- M J Adams
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - D Jevtics
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - M J Strain
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - I D Henning
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - A Hurtado
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK.
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34
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Jiang M, Mao W, Zhou X, Kan C, Shi D. Wavelength-Tunable Waveguide Emissions from Electrically Driven Single ZnO/ZnO:Ga Superlattice Microwires. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11800-11811. [PMID: 30840431 DOI: 10.1021/acsami.9b00851] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Because of the superlattice structures comprising periodic and alternating crystalline layers, one-dimensional photon crystals can be employed to expand immense versatility and practicality of modulating the electronic and photonic propagation behaviors, as well as optical properties. In this work, individual superlattice microwires (MWs) comprising ZnO and Ga-doped ZnO (ZnO/ZnO:Ga) layers were successfully synthesized. Wavelength-tunable multipeak emissions can be realized from electrically driven single superlattice MW-based emission devices, with the dominant wavelengths tuned from ultraviolet to visible spectral regions. To illustrate the multipeak character, single superlattice MWs were selected to construct fluorescent emitters, and the emission wavelength could be tuned from 518 to 562 nm, which is dominated by Ga incorporation. Especially, by introducing Au quasiparticle film decoration, emission characteristics can further be modulated, such as the red shift of the emission wavelengths, and the multipeaks were strongly modified and split into more and narrower subbands. In particular, electrically pumped exciton-polariton emission was realized from heterojunction diodes composed of single ZnO/ZnO:Ga superlattice MWs and p-GaN layers in the blue-ultraviolet spectral regions. With the aid of localized surface plasmons from Au nanoparticles, which deposited on the superlattice MW, significant improvement of emission characteristics, such as enhancement of output efficiencies, blue shift of the dominant emission wavelengths, and narrowing of the spectral linewidth, can be achieved. The multipeak emission characteristics would be originated from the typical optical cavity modes, but not the Fabry-Perot mode optical cavity formed by the bilateral sides of the wire. The resonant modes are likely attributed to the coupled optical microcavities, which formed along the axial direction of the wire; thus, the emitted photons can be propagated and selected longitudinally. Therefore, the novel ZnO/ZnO:Ga superlattice MWs with a quadrilateral cross section can provide a potential platform to construct multicolor emitters and low-threshold exciton-polariton diodes and lasers.
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35
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Demonstration of extrinsic chirality of photoluminescence with semiconductor-metal hybrid nanowires. Sci Rep 2019; 9:5040. [PMID: 30911080 PMCID: PMC6434037 DOI: 10.1038/s41598-019-41615-1] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2019] [Accepted: 03/08/2019] [Indexed: 11/24/2022] Open
Abstract
Chiral optical response is an inherent property of molecules and nanostructures, which cannot be superimposed on their mirror images. In specific cases, optical chirality can be observed also for symmetric structures. This so-called extrinsic chirality requires that the mirror symmetry is broken by the geometry of the structure together with the incident or emission angle of light. From the fabrication point of view, the benefit of extrinsic chirality is that there is no need to induce structural chirality at nanoscale. This paper reports demonstration extrinsic chirality of photoluminescence emission from asymmetrically Au-coated GaAs-AlGaAs-GaAs core-shell nanowires fabricated on silicon by a completely lithography-free self-assembled method. In particular, the extrinsic chirality of PL emission is shown to originate from a strong symmetry breaking of fundamental HE11 waveguide modes due to the presence of the asymmetric Au coating, causing preferential emission of left and right-handed emissions in different directions in the far field.
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36
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Chen S, Yukimune M, Fujiwara R, Ishikawa F, Chen WM, Buyanova IA. Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire. NANO LETTERS 2019; 19:885-890. [PMID: 30608174 DOI: 10.1021/acs.nanolett.8b04103] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A coherent photon source emitting at near-infrared (NIR) wavelengths is at the heart of a wide variety of applications ranging from telecommunications and optical gas sensing to biological imaging and metrology. NIR-emitting semiconductor nanowires (NWs), acting both as a miniaturized optical resonator and as a photonic gain medium, are among the best-suited nanomaterials to achieve such goals. In this study, we demonstrate the NIR lasing at 1 μm from GaAs/GaNAs/GaAs core/shell/cap dilute nitride nanowires with only 2.5% nitrogen. The achieved lasing is characterized by an S-shape pump-power dependence and narrowing of the emission line width. Through examining the lasing performance from a set of different single NWs, a threshold gain, gth, of 4100-4800 cm-1, was derived with a spontaneous emission coupling factor, β, up to 0.8, which demonstrates the great potential of such nanophotonic material. The lasing mode was found to arise from the fundamental HE11a mode of the Fabry-Perot cavity from a single NW, exhibiting optical polarization along the NW axis. Based on temperature dependence of the lasing emission, a high characteristic temperature, T0, of 160 (±10) K is estimated. Our results, therefore, demonstrate a promising alternative route to achieve room-temperature NIR NW lasers thanks to the excellent alloy tunability and superior optical performance of such dilute nitride materials.
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Affiliation(s)
- Shula Chen
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
| | - Mitsuki Yukimune
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Ryo Fujiwara
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Fumitaro Ishikawa
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
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37
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Zhang G, Takiguchi M, Tateno K, Tawara T, Notomi M, Gotoh H. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature. SCIENCE ADVANCES 2019; 5:eaat8896. [PMID: 30801006 PMCID: PMC6386577 DOI: 10.1126/sciadv.aat8896] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Accepted: 12/28/2018] [Indexed: 05/28/2023]
Abstract
Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.
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Affiliation(s)
- Guoqiang Zhang
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masato Takiguchi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Kouta Tateno
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Takehiko Tawara
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masaya Notomi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Hideki Gotoh
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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38
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Li H, Tang J, Pang G, Wang D, Fang X, Chen R, Wei Z. Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components. RSC Adv 2019; 9:38114-38118. [PMID: 35541770 PMCID: PMC9075889 DOI: 10.1039/c9ra08451g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Accepted: 11/13/2019] [Indexed: 12/26/2022] Open
Abstract
III–V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices. GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.![]()
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Affiliation(s)
- Haolin Li
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Guotao Pang
- Department of Electrical and Electronic Engineering
- Southern University of Science and Technology
- Shenzhen
- P. R. China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Rui Chen
- Department of Electrical and Electronic Engineering
- Southern University of Science and Technology
- Shenzhen
- P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
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39
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Stettner T, Thurn A, Döblinger M, Hill MO, Bissinger J, Schmiedeke P, Matich S, Kostenbader T, Ruhstorfer D, Riedl H, Kaniber M, Lauhon LJ, Finley JJ, Koblmüller G. Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. NANO LETTERS 2018; 18:6292-6300. [PMID: 30185051 DOI: 10.1021/acs.nanolett.8b02503] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from ∼0.8 to ∼1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to ∼25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.
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Affiliation(s)
- T Stettner
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - A Thurn
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - M Döblinger
- Department of Chemistry , Ludwig-Maximilians-Universität München , 81377 München , Germany
| | - M O Hill
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J Bissinger
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - P Schmiedeke
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - S Matich
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - T Kostenbader
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - D Ruhstorfer
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - H Riedl
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - M Kaniber
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - L J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J J Finley
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - G Koblmüller
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
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