Grain-Size-Controlled Mechanical Properties of Polycrystalline Monolayer MoS2

A Molecular Dynamics Study on the Defect Formation and Mechanical Behavior of Molybdenum Disulfide under Irradiation

Due to its appealing characteristics, molybdenum disulfide (MoS2) presents a promising avenue for the exploration of lubrication protection materials in high-energy irradiation scenarios. Herein, we present a comprehensive investigation into the defect behavior of multilayer MoS2 under argon (Ar) atom irradiation leveraging molecular dynamics simulations. We have demonstrated the energy shifts and structural evolution in MoS2 upon irradiation, including the emergence of Frenkel defects and intricate defect clusters. The structural damage exhibits an initial increase followed by a subsequent decrease as the incident kinetic energy increases, ultimately peaking at 2.5 keV. Moreover, we investigated the effect of postannealing on defect recovery and conducted the uniaxial tensile and interlayer shearing simulation in order to provide valuable insights for the defect evolution and its impact on mechanical and tribological properties. Furthermore, we have proposed the optimal annealing temperature. The current study reveals the atomic mechanisms underlying irradiation-induced damage on the structural integrity and mechanical performance of MoS2, thereby providing crucial guidance for its vital application in nuclear reactors and aerospace industries.

Strain-Assisted Phase Transformation in Two-Dimensional Transition-Metal Dichalcogenides

Two-dimensional polymorphic transition-metal dichalcogenides have drawn attention for their diverse applications. This work explores the complex interplay between strain-induced phase transformation and crack growth behavior in annealed nanocrystalline MoS2. Employing molecular dynamics (MD) simulations, this research focuses on the effect of grain size, misorientation, and annealing on phase evolution and their effects on the mechanical behavior of MoS2. First, examining phase transformation in monocrystalline MoS2 under various stress states reveals distinct behaviors depending on the initial phase (1T or 2H) and crystallographic orientation with respect to loading directions. Notably, transformation from a layered hexagonal to a body-centered tetragonal structure is more noticeable when strain in a zigzag direction is applied to the 1T sample. As such, single crystalline MoS2 with a 1T phase exhibits a 16% lower fracture stress in the armchair direction compared to that with a 2H phase. On the other hand, the 1T phase shows a 5% higher phonon lifetime compared to the 2H phase with similar phonon group velocities. Next, the influence of thermal energy and mechanical stress on the phase transformation of nanocrystalline MoS2 is investigated through annealing and quenching cycles, uncovering 60 and 44% irreversibility of phase transformation for an average grain size of 3 and 11 nm, respectively. Besides, the evolution of nanocrystalline samples with different initial phases and grain sizes is studied under uniaxial and biaxial stress. This study shows an inverse pseudo-Hall-Petch effect with exponents of 0.11 and 0.09 for 2H and 1T, respectively. The study reveals that phase transformation can occur concurrently with crack initiation and propagation with the 1T phase exhibiting a 19% lower grain size sensitivity of fracture stress compared to the 2H phase.

High-Strength Polycrystalline Covalent Organic Framework with Abnormal Thermal Transport Insensitive to Grain Boundary

Grain boundaries (GBs) in two-dimensional (2D) covalent organic frameworks (COFs) unavoidably form during the fabrication process, playing pivotal roles in the physical characteristics of COFs. Herein, molecular dynamics simulations were employed to elucidate the fracture failure and thermal transport mechanisms of polycrystalline COFs (p-COFs). The results revealed that the tilt angle of GBs significantly influences out-of-plane wrinkles and residual stress in monolayer p-COFs. The tensile strength of p-COFs can be enhanced and weakened with the tilt angle, which exhibits an inverse relationship with the defect density. The crack always originates from weaker heptagon rings during uniaxial tension. Notably, the thermal transport in p-COFs is insensitive to the GBs due to the variation of minor polymer chain length at defects, which is abnormal for other 2D crystalline materials. This study contributes insights into the impact of GBs in p-COFs and offers theoretical guidance for structural design and practical applications of advanced COFs.

Boosting the Output Performance of the MoS2 Monolayer-Based Piezoelectric Nanogenerator by Artificial Dual Strain Concentration

Piezoelectric nanogenerators (PENGs) with molybdenum disulfide (MoS2) monolayers have been intensively studied owing to their superior mechanical durability and stability. However, the limited output performance resulting from a small active area and low strain levels continues to pose a significant challenge that should be overcome. Herein, we report a novel strategy for the epoch-making output performance of a PENG with a MoS2 monolayer by adopting the additive strain concentration concept. The simulation study indicates that strain in the MoS2 monolayer can be initially augmented by the wavy structure resulting from the prestretched poly(dimethylsiloxane) (PDMS) and is further increased through flexural deformation (i.e., bending). Based on these studies, we have developed concentrated strain-applied PENGs with MoS2 monolayers. The wavy structures effectively applied strain to the MoS2 monolayer and generated a piezoelectric output voltage and current of around 580 mV and 47.5 nA, respectively. Our innovative approach to enhancing the performance of PENGs with MoS2 monolayers through the artificial dual strain concept has led to groundbreaking results, achieving the highest recorded output voltage and current for PENGs based on two-dimensional (2D) materials, which provides unique opportunities for the 2D-based energy harvesting field and structural insight into how to improve the net strain on 2D materials.

Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides

The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.

High Impact Resistance of 2D MXene with Multiple Fracture Modes

Two-dimensional (2D) transition metal carbides/nitrides (MXenes) are promising nanomaterials due to their remarkable mechanical and electrical properties. However, the out-of-plane mechanical properties of MXene under impact loading remain unclear. Here, particular impact-resistant fracture behaviors and energy dissipation mechanisms of MXene were systemically investigated via molecular dynamics (MD) simulation. Specifically, it was found that the specific penetration energy of MXene exceeds most conventional impact-resistant materials, such as aluminum and polycarbonate. Two kinds of novel energy dissipation mechanisms, including radial fracture and crushed fracture under different impact velocities, are revealed. In addition, the sandwiched atomic-layer structure of MXene can deflect cracks and restrain their propagation to some extent, enabling the cracked MXene to retain remarkable resistance. This work provides in-depth insights into the impact-resistance of MXene, laying a foundation for its future applications.

Stiffer Bonding of Armchair Edge in Single-Layer Molybdenum Disulfide Nanoribbons

The physical and chemical properties of nanoribbon edges are important for characterizing nanoribbons and applying them in electronic devices, sensors, and catalysts. The mechanical response of molybdenum disulfide nanoribbons, which is an important issue for their application in thin resonators, is expected to be affected by the edge structure, albeit this result is not yet being reported. In this work, the width-dependent Young's modulus is precisely measured in single-layer molybdenum disulfide nanoribbons with armchair edges using the developed nanomechanical measurement based on a transmission electron microscope. The Young's modulus remains constant at ≈166 GPa above 3 nm width, but is inversely proportional to the width below 3 nm, suggesting a higher bond stiffness for the armchair edges. Supporting the experimental results, the density functional theory calculations show that buckling causes electron transfer from the Mo atoms at the edges to the S atoms on both sides to increase the Coulomb attraction.

Defect engineering for thermal transport properties of nanocrystalline molybdenum diselenide

Molybdenum diselenide (MoSe2) is attracting great attention as a transition metal dichalcogenide (TMDC) due to its unique applications in micro-electronics and beyond. In this study, the role of defects in the thermal transport properties of single-layer MoSe2 is investigated using non-equilibrium molecular dynamics (NEMD) simulations. Specifically, this work quantifies how different microstructural defects such as vacancies and grain boundaries (GBs) and their concentration (N) alter the thermal conductivity (TC) of single crystal and nanocrystalline MoSe2. These results show a significant drop in thermal conductivity as the concentration of defects increases. Specifically, point defects lower the TC of MoSe2 in the form of N-β where β is 0.5, 0.48 and 0.36 for VMo, VMo-Se and VSe vacancies, respectively. This study also examines the impact of grain boundaries on the thermal conductivity of nanocrystalline MoSe2. These results suggest that GB migration and stress-assisted twinning along with localized phase transformation (2H to 1T) are the primary factors affecting the thermal conductivity of nanocrystalline MoSe2. Based on MD simulations, TC of polycrystalline MoSe2 increases with the average grain size (d̄) in the form of d̄4.5. For example, the TC of nanocrystalline MoSe2 with d̄ = 11 nm is around 40% lower than the TC of the pristine monocrystalline sample with the same dimensions. Finally, the influence of sample size and temperature is studied to determine the sensitivity of quantitative thermal properties to the length scale and phonon scattering, respectively. The results of this work could provide valuable insights into the role of defects in engineering the thermal properties of next generation semiconductor-based devices.

Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy

Grain boundaries (GBs) are one- or two-dimensional (2D) defects, which are universal in crystals and play a crucial role in determining their mechanical, electrical, optical, and thermoelectric properties. In general, GBs tend to decrease electrical or thermal conductivity, and consequently degrade the performance of devices. However, the unusual characteristics of GBs have led to the production of a new class of memristors with 2D semiconducting transition metal dichalcogenides (TMDs) and the creation of conducting channels in 2D topological insulators. Therefore, understanding the nature of GBs and their influence on device applications emphasizes the importance of GB engineering for future 2D TMD-based devices. This review discusses recent progress made in the investigation of various roles of GBs in 2D TMDs characterized via scanning tunneling microscopy/spectroscopy.

Retrieving Grain Boundaries in 2D Materials

The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Chemical Potential-Modulated Ultrahigh-Phase-Purity Growth of Ultrathin Transition-Metal Boride Single Crystals

Two-dimensional (2D) transition-metal borides (TMBs) are especially expected to exhibit excellent performance in various fields among electricity, superconductivity, magnetism, mechanics, biotechnology, battery, and catalysis. However, the synthesis of ultrathin TMB single crystals with ultrahigh phase purity was deemed extremely challenging and has not been realized till date. That is because TMBs have the most kinds of crystal structures among inorganic compounds, which possess generous phase structures with similar formation energies compared with other transition-metal compounds, attributing to the metalloid and electron-deficient characteristics of boron. Herein, for the first time, we demonstrate a chemical potential-modulated strategy to realize the precise synthesis of various ultrahigh-phase-purity (approximately 100%) ultrathin TMB single crystals, and the precision in the phase formation energy can reach as low as 0.01 eV per atom. The ultrathin MoB2 single crystals exhibit an ultrahigh Young's modulus of 517 GPa compared to other 2D materials. Our work establishes a chemical potential-modulated strategy to synthesize ultrathin single crystals with ultrahigh phase purity, especially those with similar formation energies, and undoubtedly provides excellent platforms for their extensive research and applications.

Host-Guest Intercalation Chemistry for the Synthesis and Modification of Two-Dimensional Transition Metal Dichalcogenides

Intercalation chemistry is of great importance in solid-state physics and chemistry for the ability to modulate electronic structures for constructing new materials with exotic properties. This ancient and versatile discipline has recently become prevailing in the synthesis and regulation of 2D transition metal dichalcogenides (TMDs) with atomic thickness due to diverse host-guest configurations and their impact on layered frameworks, which bring in extensive applications in electronics, optoelectronics, and other energy-based devices. In order to prepare 2D TMD materials with desired structure and properties, it is essential to gain in-depth understanding of the key role the intercalation chemistry plays in the preparation process. A focused review on recent advances regarding 2D TMD materials through intercalation exfoliation from the view of host, guest, and solvent interactions is provided. The effect of intercalation chemistry on TMD nanosheets synthesis and modification is comprehensively reviewed. The interactions between host and guest from the aspects of lattice strain, interlayer distance, and carrier density are considered. Finally, a prospectus of the future research opportunities for the intercalation chemistry of 2D materials is provided.

Effective Optical Properties of Laterally Coalescing Monolayer MoS2

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) exhibit compelling dimension-dependent exciton-dominated optical behavior influenced by thickness and lateral quantum confinement effects. Thickness quantum confinement effects have been observed; however, experimental optical property assessment of nanoscale lateral dimension monolayer TMDCs is lacking. Here, we employ ex situ spectroscopic ellipsometry to evaluate laterally coalescing monolayer metalorganic chemical vapor deposited MoS₂. A multisample analysis is used to constrain Bruggeman and Maxwell-Garnett effective medium approximations and the effective dielectric functions are derived for laterally coalesced and uncoalesced MoS₂ films (∼10-94% surface coverage for ∼10-140 nm lateral grain sizes). This analysis demonstrates the ability to probe MoS₂ optical exciton behavior at growth-relevant grain sizes in relation to chemical vapor nucleation density, ripening, and lateral growth conditions. Our analysis is pertinent toward expected in situ epitaxial 2D TMDC film growth metrology to enable the facile development of monolayer films with targeted process-dependent optical properties.

Visualizing Grain Statistics in MOCVD WSe2 through Four-Dimensional Scanning Transmission Electron Microscopy

Using four-dimensional scanning transmission electron microscopy, we demonstrate a method to visualize grains and grain boundaries in WSe₂ grown by metal organic chemical vapor deposition (MOCVD) directly onto silicon dioxide. Despite the chemical purity and uniform thickness and texture of the MOCVD-grown WSe₂, we observe a high density of small grains that corresponds with the overall selenium deficiency we measure through ion beam analysis. Moreover, reconstruction of grain information permits the creation of orientation maps that demonstrate the nucleation mechanism for new layers-triangular domains with the same orientation as the layer underneath induces a tensile strain increasing the lattice parameter at these sites.

Valleytronics in two-dimensional materials with line defect

The concept of valley originates from two degenerate but nonequivalent energy bands at the local minimum in the conduction band or local maximum in the valence band. Manipulating the valley states for information storage and processing develops a brand-new electronics-valleytronics. Broken inversion symmetry is a necessary condition to produce pure valley currents. The polycrystalline two-dimensional materials (graphene, silicene, monolayer group-VI transition metal dichalcogenides, etc) with pristine grains stitched together by disordered grain boundaries (GBs) are the natural inversion-symmetry-broken systems and the candidates in the field of valleytronics. Different from their pristine forms, the Dirac valleys on both sides of GBs are mismatched in the momentum space and induce peculiar valley transport properties across the GBs. In this review, we systematically demonstrate the fundamental properties of valley degree of freedom across mostly studied and experimentally feasible polycrystalline structure-the line defect, and the manipulation strategies with electrical, magnetic and mechanical methods to realize the valley polarization. We also introduce an effective numerical method, the non-equilibrium Green's function technique, to tackle the valley transport issues in the line defect systems. The present challenges and the perspective on the further investigations of the line defect in valleytronics are also summarized.

Grain boundary and misorientation angle-dependent thermal transport in single-layer MoS2

Grain boundaries (GBs) are inevitable defects in large-area MoS₂ samples but they play a key role in their properties, however, the influence of grain misorientation on thermal transport has largely remained unknown. Here, the critical role of misorientation angle in thermal transport characteristics across 5|7 polar dislocation-dominated GBs in monolayer MoS₂ is explored using nonequilibrium molecular dynamics simulations. Results show that thermal transport characteristics of defective GBs are greatly dictated by the misorientation angle, with "U"-shaped thermal conductance as misorientation angle varying from around 5.06-52.26°, as well as by GB energy, 5|7 dislocation type and the grain size. Such unique thermal transport across GBs is primarily attributed to rising phonon-boundary softening and scattering with increasing dislocation density at GBs or GB energy, as well as an increase in localized phonon modes. The study establishes the fundamental relationship between GB and the thermal properties of single-layer MoS₂ and highlights the vital role of GBs in designing efficient thermoelectric and thermal management transition metal dichalcogenides.

Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS)

The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.

Functional Grain Boundaries in Two-Dimensional Transition-Metal Dichalcogenides

ConspectusTwo-dimensional (2D) transition-metal dichalcogenides (TMDs) are a class of promising low-dimensional materials with a variety of emergent properties which are attractive for next-generation electronic and optical devices; such properties include tunable band gaps, high electron mobilities, high exciton binding energies, excellent thermal stability and flexibility. During the synthesis process of these materials, especially chemical vapor deposition, defects such as grain boundaries (GBs) inevitably exist. GBs are the interfaces between differently oriented grains and are line defects in 2D crystals. While GBs can degrade the overall quality of 2D materials and adversely affect some of their electrical and mechanical properties, recent results show that GBs give rise to or enhance a wide range of unique electrical, mechanical, and chemical properties of the GBs in 2D TMDs. The effects of GBs on 2D material properties are complex and diverse, providing exciting opportunities to realize new functionalities by manipulating the local structure and properties. Notably, these effects are strongly related to atom types, dislocation cores, crystal misorientation at GBs, and both in- and out-of-plane deformation. The exploitation of GBs for novel applications requires a deepened understanding of synthesis, postprocessing, defect structures, GB properties, and GB structure-property relationships in 2D materials.In this Account, we first introduce a detailed classification of GBs in 2D TMDs based on atomic structure, symmetry, and the local coordination of both transition metals and chalcogenide atoms. The GB types in typical MoS₂ (high-symmetry hexagonal structure) and ReS₂ (low-symmetry monoclinic structure) are taken as examples. Next, we describe the properties of GBs in 2D TMDs, including thermodynamic and kinetic, mechanical, thermal, electrical, magnetic, chemical, and electrocatalysis properties as well as several application areas where these may be exploited. Here we provide systematic atomic-level and electronic level explanations of these properties to clarify their dependences on GB structures. Applications that extend from these properties, including functional electronics, chemical sensors, and electrocatalysts, are also described. Finally, we provide several perspectives and suggest promising opportunities for exploiting the novel properties of GBs in 2D TMDs. We expect that this Account will further stimulate the fundamental research of GBs and boost the wide application of multifunctional devices.

Effect of point defects and nanopores on the fracture behaviors in single-layer MoS2 nanosheets

Point defects and nanopores are inevitable and particularly noticeable in single-layer (SL) MoS2. Molecular dynamics (MD) simulations have been done to comprehensively study the influences of point defects and nanopores on tensile deformation behaviors of SLMoS2 nanosheets, and the dependences of fracture properties on defect type and concentration, pore size, temperature and strain rate are discussed. The formation energy of S vacancy (VS) is the lowest one, but that of VMoS6 is the highest one, corresponding to the highest and lowest fracture stress, respectively. The local stress concentration around point defects and nanopores might lead to the early bond breaking and subsequent nucleation of cracks and brittle fracture upon tensile loading. A modified Griffith criterion is proposed to describe the defect concentration and pore size dependent fracture stress and strain. These findings provide us an important guideline for the structural design of 2D materials in future applications.

Mechanical ductile detwinning in CH3NH3PbI3 perovskite

Twin boundaries (TBs) were identified to show conflicting positive/negative effects on the physical properties of CH₃NH₃PbI₃ perovskites, but their effects on the mechanical properties are still unclear. Herein, the tensile characteristics of a variety of TB-dominated bicrystalline CH₃NH₃PbI₃ perovskites are explored using molecular simulations. The results show that TB-containing CH₃NH₃PbI₃ perovskites can be classified into four types based on their tensile ductile detwinning characteristics. Type I is characterized by smooth loading flow stress-strain responses, originating from relatively uniform stress distribution induced gradual amorphization in the TB region. Types II and III are represented by a sudden drop in loading stresses but then distinct ductile flow stress-strain curves, resulting from limited and large-area amorphizations of TB-involved structures, respectively. However, Type IV is highlighted by double apparent peaks in the loading curve, followed by a ductile flow response, originating from the stress-concentration of localization-to-globalization in the TB region, as well as amorphization. This study provides critical insights into the mechanical characteristics of CH₃NH₃PbI₃ perovskites and indicates that TB engineering is a promising strategy to design mechanically robust hybrid organic-inorganic perovskite-based device systems.

Self-Assembly of MoS2 Monolayer Sheets by Desulfurization

Self-assembled structures of two-dimensional (2D) materials exhibit novel physical properties distinct from those of their parent materials. Herein, the critical role of desulfurization on the self-assembled structural morphologies of molybdenum disulfide (MoS₂) monolayer sheets is explored using molecular dynamics (MD) simulations. MD results show that there are differences in the atomic energetics of MoS₂ monolayer sheets with different desulfurization contents. Both free-standing and substrate-hosted MoS₂ monolayer sheets show diversity in structural morphologies, for example, flat plane structures, wrinkles, nanotubes, and folds, depending on the desulfurization contents, planar dimensions, and ratios of length to width of MoS₂ sheets. Particularly, at the critical desulfurization content, they can roll up into nanotubes, which is in good agreement with previous experimental observations. Importantly, these observed differences in the molecular structural morphologies between free-standing and substrate-hosted MoS₂ monolayer sheets can be attributed to interatomic interactions and interlayer van der Waals interactions. Furthermore, MD results have demonstrated that the surface-driven stability of MoS₂ structures can be indicated by the desulfurization contents on one surface of MoS₂ monolayer sheets, and the self-assembly of MoS₂ monolayer sheets by desulfurization can emerge to adjust their surface-driven stability. The study provides important atomic insights into tuning the self-assembling structural morphologies of 2D materials through defect engineering in the future science and engineering applications.

Mechanical creep instability of nanocrystalline methane hydrates

Mechanical creep behaviors of natural gas hydrates are of importance for understanding the mechanical instability of gas hydrate-bearing sediments on Earth. Limited by the experimental challenges, intrinsic creep mechanisms of nanocrystalline methane hydrates remain largely unknown yet at the molecular scale. Herein, using large-scale molecular dynamics simulations, mechanical creep behaviors of nanocrystalline methane hydrates are investigated. It is revealed that mechanical creep responses are greatly dictated by internal microstructures of crystalline grain size and external conditions of temperature and static stress. Interestingly, a long steady-state creep is observed in nanocrystalline methane hydrates, which can be described by a modified constitutive Bird-Dorn-Mukherjee model. Microstructural analysis shows that deformations of crystalline grains, grain boundary diffusion and grain boundary sliding collectively govern the mechanical creep behaviors of nanocrystalline methane hydrates. Furthermore, structural transformation also appears to be important in their mechanical creep behaviors. This study provides new insights into understanding the mechanical creep scenarios of gas hydrates.

Tunable electronic properties of BSe-MoS2/WS2 heterostructures for promoted light utilization

With applications in high performance electronics, photovoltaics, and catalysis, two-dimensional (2D) transition metal dichalcogenides (TMDCs) attract extensive attention due to their extraordinary physical properties. People have focused on TMDC-based materials for years, while the low mobility greatly hinders their further application. TMDC-based heterostructures with tunable band alignment have been experimentally confirmed to be feasible for photoelectronic devices or photocatalysts. Based on the density functional theory (DFT), there are four discoveries in this work: (1) we propose two new heterostructures based on BSe and MoS2/WS2 that have quite low mismatches and intrinsic type-II alignments. (2) Even though the VBM of BSe-MoS2 are completely contributed by BSe, the heterostructure is still endowed with a lower effective mass and a better transport characteristic in comparison with pristine structures. (3) A promoted absorption ability and a better transport characteristic oppose each other and the two characteristics cannot be obtained at the same time. (4) Tension strained structures can induce promoted light absorption in the solar spectrum and the predicted efficiency of the BSe-MoS2 bilayer can be as high as ∼19.3%, when the external electric field is applied. This theoretical survey proves that BSe-MoS2/WS2 with high flexibility and tunability are potential candidates for novel electronic devices and photocatalysts.

Growth and Grain Boundaries in 2D Materials

Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.

Epitaxial Growth of Rectangle Shape MoS2 with Highly Aligned Orientation on Twofold Symmetry a-Plane Sapphire

Research on transition metal dichalcogenides (TMDs) has been accelerated by the development of large-scale synthesis based on chemical vapor deposition (CVD) growth. However, in most cases, CVD-grown TMDs are composed of randomly oriented grains, and thus contain many distorted grain boundaries (GBs), which seriously degrade their electrical and photoelectrical properties. Here, the epitaxial growth of highly aligned MoS₂ grains is reported on a twofold symmetry a-plane sapphire substrate. The obtained MoS₂ grains have an unusual rectangle shape with perfect orientation alignment along the [1-100] crystallographic direction of a-plane sapphire. It is found that the growth temperature plays a key role in its orientation alignment and morphology evolution, and high temperature is beneficial to the initial MoS₂ seeds rotate to the favorable orientation configurations. In addition, the photoluminescence quenching of the well-aligned MoS₂ grains indicates a strong MoS₂ -substrate interaction which induces the anisotropic growth of MoS₂ , and thus brings the formation of rectangle shape grains. Moreover, the well-aligned MoS₂ grains splice together without GB formation, and thus that has negligible effect on its electrical transport properties. The progress achieved in this work could promote the controlled synthesis of large-area TMDs single crystal film and the scalable fabrication of high-performance electronic devices.

Mechanical Response of Nanocrystalline Ice-Contained Methane Hydrates: Key Role of Water Ice

Water ice and gas hydrates can coexist in the permafrost and polar regions on Earth and in the universe. However, the role of ice in the mechanical response of ice-contained methane hydrates is still unclear. Here, we conduct direct million-atom molecular simulations of ice-contained polycrystalline methane hydrates and identify a crossover in the tensile strength and average compressive flow stress due to the presence of ice. The average mechanical shear strengths of hydrate-hydrate bicrystals are about three times as large as those of hydrate-ice bicrystals. The ice content, especially below 70%, shows a significant effect on the mechanical strengths of the polycrystals, which is mainly governed by the proportions of the hydrate-hydrate grain boundaries (HHGBs), the hydrate-ice grain boundaries (HIGBs), and the ice-ice grain boundaries (IIGBs). Quantitative analysis of the microstructure of the water cages in the polycrystals reveals the dissociation and reformation of various water cages due to mechanical deformation. These findings provide molecular insights into the mechanical behavior and microscopic deformation mechanisms of ice-contained methane hydrate systems on Earth and in the universe.

Inhomogeneous photocarrier dynamics and transport in monolayer MoS2 by ultrafast microscopy

Monolayer MoS₂ as a member of two-dimensional transition metal dichalcogenides (TMDs) has attracted considerable attention due to its superior optoelectronic properties. Understanding the photocarrier dynamics and transport in these two dimensional systems is beneficial for applications from photovoltaics to sensing. However, various structural defects strongly impact the dynamics and transport of photocarriers. Especially there lacks a precise measuring and understanding of photocarrier transport in TMDs. Here, femtosecond transient absorption spectroscopy and microscopy were employed to study the photocarrier dynamics and transport in monolayer MoS₂. Defect correlated photocarrier dynamics are observed across the monolayer MoS₂ where exciton formation and nonradiative recombination are the two dominant decay processes. To the best of our knowledge, we report two distinct photocarrier transport regimes in MoS₂ for the first time with diffusion coefficients of [Formula: see text] cm² s^-1 and [Formula: see text] cm² s^-1, by taking advantages of ultrafast microscopy with ∼20 nm spatial precision and ∼200 fs temporal resolution. These two regimes are ascribed to fast hot photocarrier diffusion and slow phonon-limited thermal diffusion, respectively. The results indicate that the initial fast photocarrier transport is less dependent on structural defects compared to photocarrier relaxation dynamics which may be useful for hot photocarrier extraction applications.

Quality enhancement of low temperature metal organic chemical vapor deposited MoS2: an experimental and computational investigation

Electronic quality of chemical vapor deposited MoS₂ is a function of crystallinity, which tends to decline with decrease in deposition temperature. Conventional thermal annealing can improve the quality but requires very high temperatures. In this study, we investigate a novel low temperature (room temperature to 400 °C) annealing process that exploits the electron wind force during passage of current. Here, moderate current density gives rise to atomic scale mechanical force whenever the electrons encounter defects in the lattice or grain boundaries (GBs). After hypothesizing that this force can significantly enhance defect mobility without any temperature field, we demonstrate the process using in situ transmission electron microscope and molecular dynamics simulation. Monolayer metal organic chemical vapor deposited MoS₂ deposited at 400 °C was post processed at temperature as low as 20 °C. Experimental results show five times enhancement in electrical conductivity, which is supported by electron diffraction patterns indicating significant grain growth. Discrete spots in diffraction indicate evolution of high crystallinity even at room temperature. Our computational model shows the mechanisms behind healing lattice defects as well as reorienting the GBs. The enhancement in microstructure of the specimen is also reflected in mechanical properties simulations on pre- and post-annealed specimens.

Phonon-Grain-Boundary-Interaction-Mediated Thermal Transport in Two-Dimensional Polycrystalline MoS2

Although dislocations and grain boundaries (GBs) are ubiquitous in large-scale MoS₂ samples, their interaction with phonons, which plays an important role in determining the lattice thermal conductivity of polycrystalline MoS₂, remains elusive. Here, we perform a systematic study of the heat transport in two-dimensional polycrystalline MoS₂ by both molecular dynamics simulation and atomic Green's function method. Our results indicate that the thermal boundary conductance of GBs of MoS₂ is in the range from 6.4 × 10⁸ to 35.3 × 10⁸ W m^-2 K^-1, which is closely correlated with the overlap between the vibrational density of states of GBs and those of the pristine lattice, as well as the GB energy. It is found that the GBs strongly scatter the phonons with frequency larger than 2 THz, accompanied by a pronounced phonon localization effect and significantly reduced phonon group velocities. Furthermore, by comparing the results from realistic polycrystalline MoS₂ to those from different theoretical models, we observe that the Casimir model is broken down and detailed phonon dynamics at a specific GB should be taken into account to accurately describe the phonon transport in polycrystalline materials. Our findings will provide useful guidelines for designing efficient thermoelectric and thermal management materials based on phonon-GB interaction.

Electronic Doping Controlled Migration of Dislocations in Polycrystalline 2D WS2

Migration of dislocations not only determines the durability of large-scale nanoelectronic and opto-electronic devices based on polycrystalline 2D transition-metal dichalcogenides (TMDCs), but also plays an important role in enhancing the performance of novel memristors. However, a fundamental question of the migration dependence on the electronic effects, which are inevitable in practical field-effect transistors based on 2D TMDCs, and its interplay with different dislocations, remains unexplored. Here, taking WS₂ as an example, first-principle calculations are used to show that the electronic contributions arising from defect states can greatly influence the migration barriers of dislocations. The barrier height can be reduced by as much as 50%, which is mainly attributed to the change in electronic occupation and the band energy of defect levels controlled by electronic chemical potential (Fermi level). The reduced barriers in turn lead to significantly enhanced migration, and thus the plasticity. Since defect levels from dislocations locate deep inside the bandgap, the doping-induced tuning of barrier height can be achieved at relatively low doping concentration through either chemical doping or electrode gating. The effective electromechanical coupling in 2D TMDCs can provide new opportunities in material engineering for various potential applications.

Defect Healing in Layered Materials: A Machine Learning-Assisted Characterization of MoS2 Crystal Phases

Monolayer MoS₂ is an outstanding candidate for a next-generation semiconducting material because of its exceptional physical, chemical, and mechanical properties. To make this promising layered material applicable to nanostructured electronic applications, synthesis of a highly crystalline MoS₂ monolayer is vitally important. Among different types of synthesis methods, chemical vapor deposition (CVD) is the most practical way to synthesize few- or mono-layer MoS₂ on the target substrate owing to its simplicity and scalability. However, synthesis of a highly crystalline MoS₂ layer remains elusive. This is because of the number of grains and defects unavoidably generated during CVD synthesis. Here, we perform multimillion-atom reactive molecular dynamics (RMD) simulations to identify an origin of the grain growth, migration, and defect healing process on a CVD-grown MoS₂ monolayer. RMD results reveal that grain boundaries could be successfully repaired by multiple heat treatments. Our work proposes a new way of controlling the grain growth and migration on a CVD-grown MoS₂ monolayer.

Superior spin-polarized electronic structure in MoS2/MnO2 heterostructures with an efficient hole injection

Two-dimensional (2D) materials with intrinsic magnetism and low hole injection barriers to transition metal dichalcogenides are crucial to develop dopant-free all-2D p-type spin field effect transistors for CMOS logic and spintronic applications. Here, the electronic structures of 2D MoS₂/MnO₂ heterostructures are investigated by first-principles calculations, where the monolayered MnO₂ has two polymorphs including magnetic metal h-MnO₂ and magnetic semiconductor t-MnO₂. Both the MoS₂/h-MnO₂ and MoS₂/t-MnO₂ heterostructures show p-type doping for MoS₂. In the MoS₂/h-MnO₂ model with a semiconductor/metal contact, the charge transfer can affect the occupation of Mn 3d and O 2p orbitals, which results in a half-metallic characteristic of the heterostructure with a Schottky barrier height of only 0.15 eV. However, the MoS₂/t-MnO₂ model with a semiconductor/semiconductor contact shows a spin-gapless electronic structure. Moreover, the type-II band alignment of the MoS₂/t-MnO₂ heterostructure can facilitate the effective separation of electrons and holes, which can enhance the lifetime of interlayer excitons. The long interlayer exciton lifetime makes it a good candidate for electron-hole separators and related optoelectronic devices. By applying vertical compression, the spin channel of the half-metallic MoS₂/h-MnO₂ heterostructure can be reversed and the spin-gapless band structure of the MoS₂/t-MnO₂ heterostructure becomes half-metallic. Furthermore, by applying a gate voltage, the Schottky barrier height and the spin-gapless gap can be tailored. The tunable spin polarization, spin-polarized direction and exciton recombination rate provide a feasible way toward spintronics and optoelectronics.

Defect-Mediated Alloying of Monolayer Transition-Metal Dichalcogenides

Alloying plays a central role in tailoring the material properties of 2D transition-metal dichalcogenides (TMDs). However, despite widespread reports, the details of the alloying mechanism in 2D TMDs have remained largely unknown and are yet to be further explored. Here, we combine a set of systematic experiments with ab initio density functional theory (DFT) calculations to unravel a defect-mediated mechanism for the alloying of monolayer TMD crystals. In our alloying approach, a monolayer MoSe₂ film serves as a host crystal in which exchanging selenium (Se) atoms with sulfur (S) atoms yields a MoS_{2 x}Se_{2(1- x)} alloy. Our study reveals that the driving force required for the alloying of CVD-grown films with abundant vacancy-type defects is significantly lower than that required for the alloying of exfoliated films with fewer vacancies. Indeed, we show that pre-existing Se vacancies in the host MoSe₂ lattice mediate the replacement of chalcogen atoms and facilitate the synthesis of MoS_{2 x}Se_{2(1- x)} alloys. Our DFT calculations suggest that S atoms can bind to Se vacancies and then diffuse throughout the host MoSe₂ lattice via exchanging the position with Se vacancies, further supporting our proposed defect-mediated alloying mechanism. Beside native vacancy defects, we show that the existence of large-scale defects in CVD-grown MoSe₂ films causes the fracture of alloys under the alloying-induced strain, while no such effect is observed in exfoliated MoSe₂ films. Our study provides a deep insight into the details of the alloying mechanism and enables the synthesis of 2D alloys with tunable properties.