Exploitable Magnetic Anisotropy of the Two-Dimensional Magnet CrI3

Magnetic Structure-Dependent Ultrafast Spin Relaxation in Magnet CrI3: A Time-Domain ab Initio Study

Two-dimensional magnet CrI3 is a promising candidate for spintronic devices. Using nonadiabatic molecular dynamics and noncollinear spin time-dependent density functional theory, we investigated hole spin relaxation in two-dimensional CrI3 and its dependence on magnetic configurations, impacted by spin-orbit and electron-phonon interactions. Driven by in-plane and out-of-plane iodine motions, the relaxation rates vary, extending from over half a picosecond in ferromagnetic systems to tens of femtoseconds in certain antiferromagnetic states due to significant spin fluctuations, associated with the nonadiabatic spin-flip in tuning to the adiabatic flip. Antiferromagnetic CrI3 with staggered layer magnetic order notably accelerates adiabatic spin-flip due to enhanced state degeneracy and additional phonon modes. Ferrimagnetic CrI3 shows a transitional behavior between ferromagnetic and antiferromagnetic types as the magnetic moment changes. These insights into the spin dynamics of CrI3 underscore its potential for rapid-response spintronic applications and advance our understanding of two-dimensional materials for spintronics.

Two-Dimensional Os2Se3 Nanosheet: A Ferroelectric Metal with Room-Temperature Ferromagnetism

Two-dimensional (2D) ferroelectric metals (FEMs) possess intriguing characteristics, such as unconventional superconductivity and the nonlinear anomalous Hall effect. However, their occurrence is exceedingly rare due to mutual repulsion between ferroelectricity and metallicity. In addition, further incorporating other features like ferromagnetism into FEMs to enhance their functionalities poses a significantly greater challenge. Here, via first-principles calculations, we demonstrate a case of an FEM that features a coexistence of room-temperature ferromagnetism, ferroelectricity, and metallicity in a thermodynamically stable 2D Os2Se3. It presents a vertical electric polarization of 3.00 pC/m that exceeds those of most FEMs and a moderate polarization switching barrier of 0.22 eV per formula unit. Moreover, 2D Os2Se3 exhibits robust ferromagnetism (Curie temperature TC ≈ 527 K) and a sizable magnetic anisotropy energy (-30.87 meV per formula unit). Furthermore, highly magnetization-dependent electrical conductivity is revealed, indicative of strong magnetoelectric coupling. Berry curvature calculation suggests that the FEM might exhibit nontrivial band topology.

Status and Prospect of Two-Dimensional Materials in Electrolytes for All-Solid-State Lithium Batteries

Replacing liquid electrolytes and separators in conventional lithium-ion batteries with solid-state electrolytes (SSEs) is an important strategy to ensure both high energy density and high safety. Searching for fast ionic conductors with high electrochemical and chemical stability has been the core of SSE research and applications over the past decades. Based on the atomic-level thickness and infinitely expandable planar structure, numerous two-dimensional materials (2DMs) have been exploited and applied to address the most critical issues of low ionic conductivity of SSEs and lithium dendrite growth in all-solid-state lithium batteries. This review introduces the research process of 2DMs in SSEs, then summarizes the mechanisms and strategies of inert and active 2DMs toward Li+ transport to improve the ionic conductivity and enhance the electrode/SSE interfacial compatibility. More importantly, the main challenges and future directions for the application of 2DMs in SSEs are considered, including the importance of exploring the relationship between the anisotropic structure of 2DMs and Li+ diffusion behavior, the exploitation of more 2DMs, and the significance of in situ characterizations in elucidating the mechanisms of Li+ transport and interfacial reactions. This review aims to provide a comprehensive understanding to facilitate the application of 2DMs in SSEs.

Emergence of Stable Meron Quartets in Twisted Magnets

The investigation of twist engineering in easy-axis magnetic systems has revealed remarkable potential for generating topological spin textures. Implementing twist engineering in easy-plane magnets, we introduce a novel approach to achieving fractional topological spin textures, such as merons. Through atomistic spin simulations on twisted bilayer magnets, we demonstrate the formation of a stable double Meron pair, which we refer to as the "Meron Quartet" (MQ). Unlike a single pair, the merons within the MQ exhibit exceptional stability against pair annihilation due to the protective localization mechanism induced by the twist that prevents collision of the Meron cores. Furthermore, we showcase that the stability of the MQ can be enhanced by adjusting the twist angle, resulting in an increased resistance to external perturbations such as external magnetic fields. Our findings highlight the twisted magnet as a promising platform for achieving merons as stable magnetic quasiparticles in van der Waals magnets.

Ultrafast Laser Control of Antiferromagnetic-Ferrimagnetic Switching in Two-Dimensional Ferromagnetic Semiconductor Heterostructures

Realizing ultrafast control of magnetization switching is of crucial importance for information processing and recording technology. Here, we explore the laser-induced spin electron excitation and relaxation dynamics processes of CrCl₃/CrBr₃ heterostructures with antiparallel (AP) and parallel (P) systems. Although an ultrafast demagnetization of CrCl₃ and CrBr₃ layers occurs in both AP and P systems, the overall magnetic order of the heterostructure remains unchanged due to the laser-induced equivalent interlayer spin electron excitation. More crucially, the interlayer magnetic order switches from antiferromagnetic (AFM) to ferrimagnetic (FiM) in the AP system once the laser pulse disappears. The microscopic mechanism underpinning this magnetization switching is dominated by the asymmetrical interlayer charge transfer combined with a spin-flip, which breaks the interlayer AFM symmetry and ultimately results in an inequivalent shift in the moment between two FM layers. Our study opens up a new idea for ultrafast laser control of magnetization switching in two-dimensional opto-spintronic devices.

Multiple Topological Magnetism in van der Waals Heterostructure of MnTe2/ZrS2

Topological magnetism in low-dimensional systems is of fundamental and practical importance in condensed-matter physics and material science. Here, using first-principles and Monte Carlo simulations, we present that multiple topological magnetism (i.e., skyrmion and bimeron) can survive in van der Waals heterostructure MnTe₂/ZrS₂. Arising from interlayer coupling, MnTe₂/ZrS₂ can harbor a large Dzyaloshinskii-Moriya interaction. This, combined with exchange interaction, yields an intriguing skyrmion phase under a tiny magnetic field of 75 mT. Meanwhile, upon harnessing a small electric field, magnetic bimeron can be observed in MnTe₂/ZrS₂, suggesting the existence of multiple topological magnetism. Through interlayer sliding, both topological magnetisms can be switched on-off. In addition, the impacts of d_∥ and K_eff on these spin textures are revealed, and a dimensionless parameter κ is utilized to describe their joint effect. These explored phenomena and insights not only are useful for fundamental research in topological magnetism but also enable novel applications in nanodevices.

Electronic structure, magnetoresistance and spin filtering in graphene|2 monolayer-CrI33|graphene van der Waals magnetic tunnel junctions

In the pursuit of designing van der Waals magnetic tunneling junctions (vdW-MTJs) with two-dimensional (2D) intrinsic magnets, as well as to quantitatively reveal the microscopic nature governing the vertical tunneling pathways beyond the phenomenological descriptions on CrI3-based vdW-MTJs, we investigate the structural configuration, electronic structure and spin-polarized quantum transport of graphene|2 monolayer(2ML)-CrI3|graphene heterostructure with Ag(111) layers as the electrode, using density functional theory (DFT) and its combination of non-equilibrium Green's function (DFT-NEGF) methods. The in-plane lattice of CrI3 layers is found to be stretched when placed on the graphene (Gr) layer, and the layer-stacking does not show any site selectivity. The charge transfer between CrI3 and Gr layers make the CrI3 layer lightly electron-doped, and the Gr layer hole-doped. Excitingly, the inter-layer hybridization between graphene and CrI3 layers render the CrI3 layer metallic in the majority spin channel, giving rise to an insulator-to-half-metal transition. Due to the metallic/insulator characteristics of the spin-majority/minority channel of the 2ML-CrI3 barrier in vdW-MTJs, Gr|2ML-CrI3|Gr heterostructures exhibit an almost perfect spin filtering effect (SFE) near the zero bias in parallel magnetization, a giant tunneling magnetoresistance (TMR) ratio up to 2 × 104%, and remarkable negative differential resistance (NDR). Our results not only give an explanation for the observed giant TMR in CrI3-based MTJs but also show the direct implications of 2D magnets in vdW-heterostructures.

Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6

The modulation of valley polarization in one single system is of important fundamental and practical importance in quantum information technology. Here, through the first-principles calculations, we identify single-layer TcIrGe₂S₆ as a tantalizing candidate for realizing the modulation of valley polarization. Arising from the combination of inversion symmetry breaking and intrinsic magnetic exchange interaction, single-layer TcIrGe₂S₆ exhibits spontaneous valley polarization. The value of valley polarization in the conduction band is 161 meV, favorable for achieving the intriguing anomalous valley Hall effect. Furthermore, single-layer TcIrGe₂S₆ possesses ferroelectric order. More remarkably, its ferroelectric and valley physics can be strongly coupled, namely, the valley properties can be switched off and on electrically. These findings not only provide a compelling candidate for two-dimensional valleytronic research but also open a new avenue for modulating valley physics.

Two-dimensional spin-gapless semiconductors: A mini-review

In the past decade, two-dimensional (2D) materials and spintronic materials have been rapidly developing in recent years. 2D spin-gapless semiconductors (SGSs) are a novel class of ferromagnetic 2D spintronic materials with possible high Curie temperature, 100% spin-polarization, possible one-dimensional or zero-dimensional topological signatures, and other exciting spin transport properties. In this mini-review, we summarize a series of ideal 2D SGSs in the last 3 years, including 2D oxalate-based metal-organic frameworks, 2D single-layer Fe2I2, 2D Cr2X3 (X = S, Se, and Te) monolayer with the honeycomb kagome (HK) lattice, 2D CrGa2Se4 monolayer, 2D HK Mn-cyanogen lattice, 2D MnNF monolayer, and 2D Fe4N2 pentagon crystal. The mini-review also discusses the unique magnetic, electronic, topological, and spin-transport properties and the possible application of these 2D SGSs. The mini-review can be regarded as an improved understanding of the current state of 2D SGSs in recent 3 years.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Machine Learning Study of the Magnetic Ordering in 2D Materials

Magnetic materials have been applied in a large variety of technologies, from data storage to quantum devices. The development of two-dimensional (2D) materials has opened new arenas for magnetic compounds, even when classical theories discourage their examination. Here we propose a machine-learning-based strategy to predict and understand magnetic ordering in 2D materials. This strategy couples the prediction of the existence of magnetism in 2D materials using a random forest and the Shapley additive explanations method with material maps defined by atomic features predicting the magnetic ordering (ferromagnetic or antiferromagnetic). While the random forest model predicts magnetism with an accuracy of 86%, the material maps obtained by the sure independence screening and sparsifying method have an accuracy of ∼90% in predicting the magnetic ordering. Our model indicates that 3d transition metals, halides, and structural clusters with regular transition-metal sublattices have a positive contribution in the total weight deciding the existence of magnetism in 2D compounds. This behavior is associated with the competition between crystal field and exchange splitting. The machine learning model also indicates that the atomic spin orbit coupling (SOC) is a determinant feature for the identification of the patterns separating ferro- from antiferromagnetic order. The proposed strategy is used to identify novel 2D magnetic compounds that, together with the fundamental trends in the chemical and structural space, pave novel routes for experimental exploration.

Tunable magnetoelectric coupling and electrical features in an ultrathin Cr2Si2Te6/In2Se3 heterostructure

Two-dimensional (2D) van der Waals (vdW) heterostructures based on multiferroic materials have potential applications in novel low-dimensional spintronic devices. In this work, we have investigated a strong magnetoelectric coupling and electrical dependence between single layer (1L) Cr₂Si₂Te₆ and In₂Se₃. By switching the direction of ferroelectric polarization in In₂Se₃, we observed a significant magneto-crystalline anisotropy energy (MAE) enhancement of Cr₂Si₂Te₆. The analysis of the spin-resolved orbital-decomposed band structure shows stronger magnetoelectric coupling between the In₂Se₃ and Cr₂Si₂Te₆ layers. The modulation of the electrical features could also be achieved in the switching of the ferroelectric polarization. Furthermore, the switching of Ohmic-Schottky contacts in the heterojunction with different polarization states was successfully achieved under the effect of strain engineering. Based on these findings, we design a novel 2D ferroelectric-ferromagnetic heterojunction that exploits the controllability and nonvolatility of ferroelectrics to modulate the electrical properties of the device. These findings indicate the high application potential of Cr₂Si₂Te₆/In₂Se₃ multiferroic heterojunctions in spintronics.

Tuning magnetism at the two-dimensional limit: a theoretical perspective

The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for manipulating the magnetic properties at the atomically thin and 2D limit. This review gives recent progress in the emergent 2D magnets and heterostructures, focusing on the theory side. We summarize different theoretical models, ranging from the atomic to micrometer-scale, used to describe magnetic orders. Then, the current strategies for tuning magnetism in 2D materials are further discussed, such as electric field, magnetic field, strain, optics, chemical functionalization, and spin-orbit engineering. Finally, we conclude with the future challenges and opportunities for 2D magnetism.

Transition of CrI2 from a two-dimensional network to one-dimensional chain at the monolayer limit

Two-dimensional (2D) magnets show promising applications in spintronic devices and appeal increasing attention. CrI₂, a counterpart of CrI₃, is a magnetic van der Waals crystal. However, the structure of CrI₂ at the monolayer limit is not well studied. Here, based on the density functional theory, we revealed the relationship between different phases of CrI₂ monolayer and proposed a novel and stable chain structure. The one-dimensional (1D) CrI₂ chain is a ferromagnetic semiconductor with robust electronic properties against twisting and tensile strain. Interestingly, the CrI₂ chain exhibits superelasticity with a failure strain as large as 39%. In addition, both the magnetic moments on Cr atoms and the exchange energy increase with an increase in the tensile strain. Our results push magnetic ordering from 2D to 1D, which shows possible application prospects in magnetoelectric and spintronic devices.

Ni(NCS)2 monolayer: a robust bipolar magnetic semiconductor

Searching for experimentally feasible intrinsic two-dimensional ferromagnetic semiconductors is of great significance for applications of nanoscale spintronic devices. Here, based on the first-principles calculations, an Ni(NCS)₂ monolayer was systematically investigated. The results showed that the Ni(NCS)₂ monolayer was a robust bipolar ferromagnetic semiconductor with a moderate bandgap of ∼1.5 eV. Based on the Monte Carlo simulation, its Curie temperature was about 37 K. Interestingly, the Ni(NCS)₂ monolayer remains ferromagnetic ordering when strain and electron doping were applied. However, ferromagnetic-to-antiferromagnetic phase transition occurred when high concentrations of holes were doped. Besides, the Ni(NCS)₂ monolayer is confirmed to be potentially exfoliated from its bulk forms due to its small exfoliated energy. Finally, the Ni(NCS)₂ monolayer's thermodynamic, dynamic, and mechanical stabilities were confirmed by the phonon spectrum calculation, ab initio molecular dynamics simulation and elastic constants calculation, respectively. The results showed that the Ni(NCS)₂ monolayer, as a novel 2D ferromagnetic candidate material of new magnetic molecular framework materials, may have a promising potential for magnetic nanoelectronic devices.

Ferromagnetic Cr4PtGa17: A Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice

We describe the crystal structure and elementary magnetic properties of a previously unreported ternary intermetallic compound, Cr₄PtGa₁₇, which crystallizes in a rhombohedral unit cell in the noncentrosymmetric space group R3m. The crystal structure is closely related to those of XYZ half-Heusler compounds, where X, Y, and Z are reported to be single elements only, occupying three different face-centered-cubic sublattices. The new material, Cr₄PtGa₁₇, can be most straightforwardly illustrated by writing the formula as (PtGa₂)(Cr₄Ga₁₄)Ga (X = PtGa₂, Y = Cr₄Ga₁₄, Z = Ga); that is, the X and Y sites are occupied by clusters instead of single elements. The magnetic Cr occupies a breathing pyrochlore lattice. Ferromagnetic ordering is found below T_C ∼ 61 K, by both neutron diffraction and magnetometer studies, with a small, saturated moment of ∼0.25 μ_B/Cr observed at 2 K, making Cr₄PtGa₁₇ the first ferromagnetically ordered material with a breathing pyrochlore lattice. A magnetoresistance of ∼140% was observed at 2 K. DFT calculations suggest that the material has a nearly half-metallic electronic structure. The new material, Cr₄PtGa₁₇, the first realization of both a half-Heusler-type structure and a breathing pyrochlore lattice, might pave a new way to achieve novel types of half-Heusler compounds.

Magnetic order-dependent phonon properties in 2D magnet CrI3

We carried out a systematic theoretical study on how spin affects the phononic properties of CrI3 monolayers. We find that the frequencies of two infrared-active (IR) modes are significantly influenced by the magnetic configuration. Thus an IR spectrum may be applied to identify the magnetic order by utilizing the spin-lattice correlation. The thermal expansion coefficients are 2.21, 3.35 and -5.58 × 10-6 K-1 for ferromagnetic (FM), antiferromagnetic (AFM) and paramagnetic (PM) phases at 30 K, because of the competition between the modes with negative and positive Grüneisen constants. Furthermore, the lattice thermal conductivity is also sensitive to the magnetic phase, which is attributed to the spin-dependent lattice anharmonicity. Our results provide fundamental insights into the spin-lattice coupling and clarify the potential of a spintronic monolayer as a thermal switching device for active heat flow control.

Emergence of magnetic anisotropy by surface adsorption of transition metal dimers on γ-graphyne framework

In this paper a systematic study is carried out to demonstrate the structural stability and magnetic novelty of adsorbing transition metal (TM) dimers (A-B) on graphyne (GY) surface, GY@A-B. Our research points out that the dimers are strongly adsorbed onto GY due to their large natural pores and the electron affinity of the sp-hybridized carbon atoms. Electronic properties of these dimer-graphyne composite systems are of particular importance as they behave as degenerate semiconductors with partial occupation of states atE_F. Furthermore, their remarkable spin polarization (>80%) at Fermi energy (E_F) can be of paramount importance in spintronics applications. Most of the GY@A-B structures exhibit large magnetic anisotropies as well as magnetic moments along the out-of-plane direction with respect to the GY surface. Particularly, GY@Co-Ir, GY@Ir-Ir and GY@Ir-Os structures possess positive magnetic anisotropic energies (MAE) of 121 meV, 81 meV and 137 meV, respectively, which are comparable to other well-known TM dimer doped systems. The emergence of high MAE can be understood using the second-order perturbation theory on the basis of the strong spin-orbit coupling (SOC) between the two TMs and the degeneracy of their d-orbitals nearE_F. A close correspondence between the simulated and the analytical results has been established through our work. Further, a simple estimation shows that, GY@A-B structures have the potential to store data up to 64 PB m^-2. These intriguing electronic characteristics along with magnetism suggest GY@A-B to be a promising material for future magnetic storage devices.

Spin-constrained optoelectronic functionality in two-dimensional ferromagnetic semiconductor heterojunctions

Two-dimensional (2D) van der Waals (vdW) engineering has brought about many extraordinary and new physics concepts and potential applications. Herein, we propose a new type of spin-constrained optoelectronic device developed using 2D ferromagnetic semiconductor heterostructures (FMSs). It is based on a photoexcited double-band-edge transition model, involved coupling between the interlayer magnetic order and the spin-polarized band structure and can achieve the reversible switch of band alignment via reversal of magnetization. We demonstrate that such a unique magnetic optoelectronic device can be realized with a CrBr₃/CrCl₃ heterojunction and other 2D FMS heterojunctions that have the same direction as the easy magnetization axis and have a switchable band alignment that allows reconfiguration. This study opens a new application window for 2D vdW heterostructures and enables the possibility for fully vdW-based ultra-compact spintronics devices.

Engineering the ligand states by surface functionalization: a new way to enhance the ferromagnetism of CrI3

The newly discovered 2D magnetic materials provide new opportunities for basic physics research and device applications. However, their low Curie temperature (TC) is a common weakness. In this paper, by combining magnetic Hamiltonian, Wannier functions and first-principles calculations, we systematically study the magnetic properties of monolayer CrI3 functionalized with halogens. The magnetic exchange coupling (EX) and magnetic anisotropy (MA) are found to increase significantly with X (X = F, Cl and Br) atom adsorption, and increase with increased coverage of X. In the framework of superexchange theory, the enhanced EX can be ascribed to the reduced energy difference and increased hopping strength between Cr d and I p orbitals, due to the states of the I ligand engineered by the X adatom. Besides, the X adatom may provide an additional ferromagnetic superexchange channel. Our results not only give insight into understanding the enhancement of ferromagnetism of CrI3 by atom adsorption, but also propose a promising way to improve the ferromagnetism of 2D magnetic materials.

Magnetoelectric Response of Antiferromagnetic CrI3 Bilayers

We predict that layer antiferromagnetic bilayers formed from van der Waals (vdW) materials with weak interlayer versus intralayer exchange coupling have strong magnetoelectric response that can be detected in dual-gated devices where internal displacement fields and carrier densities can be varied independently. We illustrate this strong temperature-dependent magnetoelectric response in bilayer CrI₃ at charge neutrality by calculating the gate voltage-dependent total magnetization through Monte Carlo simulations and mean-field solutions of the anisotropic Heisenberg model informed from density functional theory and experimental data and present a simple model for electrical control of magnetism by electrostatic doping.

Valence band electronic structure of the van der Waals ferromagnetic insulators: VI[Formula: see text] and CrI[Formula: see text]

Ferromagnetic van der Waals (vdW) insulators are of great scientific interest for their promising applications in spintronics. It has been indicated that in the two materials within this class, CrI[Formula: see text] and VI[Formula: see text], the magnetic ground state, the band gap, and the Fermi level could be manipulated by varying the layer thickness, strain or doping. To understand how these factors impact the properties, a detailed understanding of the electronic structure would be required. However, the experimental studies of the electronic structure of these materials are still very sparse. Here, we present the detailed electronic structure of CrI[Formula: see text] and VI[Formula: see text] measured by angle-resolved photoemission spectroscopy (ARPES). Our results show a band-gap of the order of 1 eV, sharply contrasting some theoretical predictions such as Dirac half-metallicity and metallic phases, indicating that the intra-atomic interaction parameter (U) and spin-orbit coupling (SOC) were not properly accounted for in the calculations. We also find significant differences in the electronic properties of these two materials, in spite of similarities in their crystal structure. In CrI[Formula: see text], the valence band maximum is dominated by the I 5p, whereas in VI[Formula: see text] it is dominated by the V 3d derived states. Our results represent valuable input for further improvements in the theoretical modeling of these systems.

Magnetic Two-Dimensional Chromium Trihalides: A Theoretical Perspective

The discovery of ferromagnetic order in monolayer two-dimensional (2D) crystals has opened a new venue in the field of 2D materials. Two-dimensional magnets are not only interesting on their own, but their integration in van der Waals heterostructures allows for the observation of new and exotic effects in the ultrathin limit. The family of chromium trihalides, CrI₃, CrBr₃, and CrCl₃, is so far the most studied among magnetic 2D crystals. In this Mini Review, we provide a perspective of the state of the art of the theoretical understanding of magnetic 2D trihalides, most of which will also be relevant for other 2D magnets, such as vanadium trihalides. We discuss both the well-established facts, such as the origin of the magnetic moment and magnetic anisotropy, and address as well open issues such as the nature of the anisotropic spin couplings and the magnitude of the magnon gap. Recent theoretical predictions on Moiré magnets and magnetic skyrmions are also discussed. Finally, we give some prospects about the future interest of these materials and possible device applications.

Optically Driven Ultrafast Magnetic Order Transitions in Two-Dimensional Ferrimagnetic MXenes

Laser-induced switching of spins in materials is of great interest to revolutionize future magnetic storage technology and spintronics, which is generally realized in multicomponent ferrimagnetic (FiM) compounds but rare in 2D magnets. Using density functional theory (DFT) calculations, we show that 2D MXenes, including Cr₂VC₂F₂, Mo₂VC₂F₂, Mo₂VN₂F₂, Mo₃C₂F₂, and Mo₃N₂F₂, have unusual FiM order. Interestingly, our real-time time-dependent DFT simulations demonstrate that laser pulses can directly induce ultrafast spin-selective charge transfer between magnetic sublattices in a few femtoseconds and further generate dramatic changes in the magnetic structure of these MXenes, including a transition from FiM to transient ferromagnetism (FM). The microscopic mechanism behind this ultrafast switching of spin is governed by the optically induced intersite spin transfer (OISTR) effect, which theoretically enables the ultrafast optical manipulation of the magnetic state in MXenes. Our results open new opportunities for exploring the optical manipulation of spin in 2D magnets.

Impact of oxygen defects on a ferromagnetic CrI3 monolayer

Natural oxygen defects play a vital role in the integrity, functional properties, and performance of well-known two-dimensional (2D) materials. The recently discovered chromium triiodide (CrI₃) monolayer is the first real 2D magnet. However, its interaction with oxygen remains an open fundamental question, an understanding of which is essential for further exploration of its application potentials. Employing the quantum first-principles calculation method, we investigated the influence of oxygen defects on the structural, electronic, and magnetic properties of the CrI₃ monolayer at the atomic level. We considered two oxygen-defective CrI₃ monolayers with either a single O-attached or single O-doped structure, comparing them with an un-defective pristine monolayer. The two different oxygen defects significantly affect the original architecture of the CrI₃ monolayer, being energetically favorable and increasing the stability of the CrI₃ monolayer. Moreover, these point defects introduce either deep band lines or middle gap states in the band structure. As a result, the bandgap of oxygen-defective monolayers is reduced by up to 58%, compared with the pristine sheet. Moreover, the magnetic property of the CrI₃ monolayer is drastically induced by oxygen defects. Importantly, O-defective CrI₃ monolayers possess robust exchange coupling parameters, suggesting relatively higher Curie temperature compared with the un-defective sheet. Our findings reveal that the natural oxygen defects in the CrI₃ monolayer enrich its structural, electronic, and magnetic properties. Thus, the controlled oxidation can be an effective way to tune properties and functionalities of the CrI₃ monolayer and other ultrathin magnetic materials.

This work shows that the natural oxygen defects in the CrI₃ monolayer, a first 2D magnet, enrich its structural, electronic, and magnetic properties, offering an effective way of tuning the functionality of CrI₃ monolayer and other ultrathin magnets.