Proximity Spin-Orbit Torque on a Two-Dimensional Magnet within van der Waals Heterostructure: Current-Driven Antiferromagnet-to-Ferromagnet Reversible Nonequilibrium Phase Transition in Bilayer CrI3

Spin-Orbit Torque in Single-Molecule Junctions from ab Initio

The use of electric fields applied across magnetic heterojunctions that lack spatial inversion symmetry has been previously proposed as a nonmagnetic means of controlling localized magnetic moments through spin-orbit torques (SOT). The implementation of this concept at the single-molecule level has remained a challenge, however. Here, we present first-principles calculations of SOT in a single-molecule junction under bias and beyond linear response. Employing a self-consistency scheme invoking density functional theory and nonequilibrium Green's function theory including spin-orbit interaction, we compute the change of the magnetization with the bias voltage and the associated current-induced SOT. Within the linear regime our quantitative estimates for the SOT in single-molecule junctions yield values similar to those known for magnetic interfaces. Our findings contribute to an improved microscopic understanding of SOT in single molecules.

First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals Heterostructures

Recent advancements in spin-orbit torque (SOT) technology in two-dimensional van der Waals (2D vdW) materials have not only pushed spintronic devices to their atomic limits but have also unveiled unconventional torques and novel spin-switching mechanisms. The vast diversity of SOT observed in numerous 2D vdW materials necessitates a screening strategy to identify optimal materials for torque device performance. However, such a strategy has yet to be established. To address this critical issue, a combination of density functional theory and non-equilibrium Green's function is employed to calculate the SOT in various 2D vdW bilayer heterostructures. This leads to the discovery of three high SOT systems: WTe2/CrSe2, MoTe2/VS2, and NbSe2/CrSe2. Furthermore, a figure of merit that allows for rapid and efficient estimation of SOT is proposed, enabling high-throughput screening of optimal materials and devices for SOT applications in the future.

Current-Induced Magnetization Switching in Light-Metal-Oxide/Ferromagnetic-Metal Bilayers via Orbital Rashba Effect

The orbital angular momentum (OAM) generation as well as its associated orbital torque is currently a matter of great interest in spin-orbitronics and is receiving increasing attention. In particular, recent theoretical work predicts that the oxidized light metal Cu can serve as an efficient OAM generator through its surface orbital Rashba effect. Here, for the first time, the crucial current-induced magnetic-field-free in-plane magnetization reversal is experimentally demonstrated in CoFeB/CuOx bilayers without any heavy elements. We show that the critical current density can be comparable to that of strong spin-orbit coupling systems with heavy metals (Pt and Ta) and that the magnetization reversal mechanism is governed by coherent rotation in the grains through the second-harmonic and magneto-optical Kerr effect measurements. Our results indicate that light metal oxides can play an equally important role as heavy metals in magnetization reversal, broadening the choice of materials for engineering spintronic devices.

Progress and Prospects in Metallic FexGeTe2 (3 ≤ x ≤ 7) Ferromagnets

Thermal fluctuations in two-dimensional (2D) isotropy systems at non-zero finite temperatures can destroy the long-range (LR) magnetic order due to the mechanisms addressed in the Mermin-Wanger theory. However, the magnetic anisotropy related to spin-orbit coupling (SOC) may stabilize magnetic order in 2D systems. Very recently, 2D FexGeTe2 (3 ≤ x ≤ 7) with a high Curie temperature (TC) has not only undergone significant developments in terms of synthetic methods and the control of ferromagnetism (FM), but is also being actively explored for applications in various devices. In this review, we introduce six experimental methods, ten ferromagnetic modulation strategies, and four spintronic devices for 2D FexGeTe2 materials. In summary, we outline the challenges and potential research directions in this field.

Full electrical control of multiple resistance states in van der Waals sliding multiferroic tunnel junctions

The recent development of two-dimensional magnetic and sliding-ferroelectric van der Waals (vdW) materials opens a new way to realize vdW sliding multiferroic tunnel junctions (MFTJs) for low-power nonvolatile memory applications. Here, we propose and investigate full electrical control of four nonvolatile resistance states in sliding MFTJs, Au/CrI3/bilayer h-BN/CrI3-MnBi2Te4/Au, via first principles. We found four stable states associated with different polarization orientations in bilayer h-BN and magnetization alignment in two CrI3 magnetic layers, which can be controlled purely by electrical voltage and current, respectively. The MFTJ has a giant tunneling magnetoresistance (TMR) of ∼10 000% (2000% in the presence of SOC) and a sizeable tunneling electroresistance (TER) of ∼70%. The write performance is explored by spin-transfer-torque calculations which show an impressive low critical current (∼1.5 × 1010 A m-2) to switch the magnetization of the free layer of CrI3, while antiferromagnetic MnBi2Te4 pins the reference layer with a large interfacial exchange coupling.

Recent advances in 2D van der Waals magnets: Detection, modulation, and applications

The emergence of two-dimensional (2D) van der Waals magnets provides an exciting platform for exploring magnetism in the monolayer limit. Exotic quantum phenomena and significant potential for spintronic applications are demonstrated in 2D magnetic crystals and heterostructures, which offer unprecedented possibilities in advanced formation technology with low power and high efficiency. In this review, we summarize recent advances in 2D van der Waals magnetic crystals. We focus mainly on van der Waals materials of truly 2D nature with intrinsic magnetism. The detection methods of 2D magnetic materials are first introduced in detail. Subsequently, the effective strategies to modulate the magnetic behavior of 2D magnets (e.g., Curie temperature, magnetic anisotropy, magnetic exchange interaction) are presented. Then, we list the applications of 2D magnets in the spintronic devices. We also highlight current challenges and broad space for the development of 2D magnets in further studies.

Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.

Room temperature giant magnetoresistance in half-metallic Cr2C based two-dimensional tunnel junctions

Two-dimensional (2D) magnetic materials inherit enormous potential to revolutionize next-generation spintronic technology. The majority of prior investigations using 2D ferromagnet-based tunnel junctions have shown encouraging tunnel magnetoresistance (TMR) at low temperatures. Using first-principles-based calculations, here we investigate the magnetic properties of commercially available Cr₂C crystals at their monolayer limit and reveal their half metallicity properties far beyond room temperature. We then design hetero-multilayer structures combining Cr₂C with graphene and hexagonal boron nitride (h-BN) and report their magnetoresistance using spin-polarized quantum transport calculations. While graphene based devices, adsorbed on the metal contact, reveal a very high TMR (1200%), it can be further increased to 1500% by changing the barrier layer to h-BN. The dependence of TMR on the number of barrier layers and different metallic electrode materials (Ti, Ag, and Au) are also studied. Our investigation suggests that Cr₂C based spin valves can serve as the perfect building blocks for room temperature all-2D spintronic devices.

Hard Ferromagnetism Down to the Thinnest Limit of Iron-Intercalated Tantalum Disulfide

Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy (MCA) is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak MCA typically results in soft ferromagnetism. Here, we demonstrate that ferromagnetic order persists down to the thinnest limit of Fe_xTaS₂ (Fe-intercalated bilayer 2H-TaS₂) with giant coercivities up to 3 T. We prepare Fe-intercalated TaS₂ by chemical intercalation of van der Waals-layered 2H-TaS₂ crystals and perform variable-temperature transport, transmission electron microscopy, and confocal Raman spectroscopy measurements to shed new light on the coupled effects of dimensionality, degree of intercalation, and intercalant order/disorder on the hard ferromagnetic behavior of Fe_xTaS₂. More generally, we show that chemical intercalation gives access to a rich synthetic parameter space for low-dimensional magnets, in which magnetic properties can be tailored by the choice of the host material and intercalant identity/amount, in addition to the manifold distinctive degrees of freedom available in atomically thin, van der Waals crystals.

Berry curvature-induced local spin polarisation in gated graphene/WTe2 heterostructures

Experimental control of local spin-charge interconversion is of primary interest for spintronics. Van der Waals (vdW) heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have thus far provided global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we probe the gate-tunable local spin polarisation in current-driven graphene/WTe₂ heterostructures through magneto-optical Kerr microscopy. Even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We present a theoretical model which fully explains the gate- and bias-dependent onset and spatial distribution of the intense Kerr signal as a result of a non-linear anomalous Hall effect in the heterostructure, which is enabled by its reduced point group symmetry. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important step toward nanoscale, electrical spin control.

Spin-based electronics offers significantly improved efficiency, but a major challenge is the electric manipulation of spin. Here, Powalla et al find a large gate induced spinpolarization in graphene/WTe2 heterostructures, illustrating the potential of such heterostructures for spintronics.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.

Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr_{2}Ge_{2}Te_{6}

We investigate the twist-angle and gate dependence of the proximity exchange coupling in twisted graphene on monolayer Cr_{2}Ge_{2}Te_{6} from first principles. The proximitized Dirac band dispersions of graphene are fitted to a model Hamiltonian, yielding effective sublattice-resolved proximity-induced exchange parameters (λ_{ex}^{A} and λ_{ex}^{B}) for a series of twist angles between 0° and 30°. For aligned layers (0° twist angle), the exchange coupling of graphene is the same on both sublattices, λ_{ex}^{A}≈λ_{ex}^{B}≈4  meV, while the coupling is reversed at 30° (with λ_{ex}^{A}≈λ_{ex}^{B}≈-4  meV). Remarkably, at 19.1° the induced exchange coupling becomes antiferromagnetic: λ_{ex}^{A}<0, λ_{ex}^{B}>0. Further tuning is provided by a transverse electric field and the interlayer distance. The predicted proximity magnetization reversal and emergence of an antiferromagnetic Dirac dispersion make twisted graphene/Cr_{2}Ge_{2}Te_{6} bilayers a versatile platform for realizing topological phases and for spintronics applications.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Magnetic Nanostructures: Rational Design and Fabrication Strategies toward Diverse Applications

In recent years, the continuous development of magnetic nanostructures (MNSs) has tremendously promoted both fundamental scientific research and technological applications. Different from the bulk magnet, the systematic engineering on MNSs has brought a great breakthrough in some emerging fields such as the construction of MNSs, the magnetism exploration of multidimensional MNSs, and their potential translational applications. In this review, we give a detailed description of the synthetic strategies of MNSs based on the fundamental features and application potential of MNSs and discuss the recent progress of MNSs in the fields of nanomedicines, advanced nanobiotechnology, catalysis, and electromagnetic wave adsorption (EMWA), aiming to provide guidance for fabrication strategies of MNSs toward diverse applications.

Tuning magnetism at the two-dimensional limit: a theoretical perspective

The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for manipulating the magnetic properties at the atomically thin and 2D limit. This review gives recent progress in the emergent 2D magnets and heterostructures, focusing on the theory side. We summarize different theoretical models, ranging from the atomic to micrometer-scale, used to describe magnetic orders. Then, the current strategies for tuning magnetism in 2D materials are further discussed, such as electric field, magnetic field, strain, optics, chemical functionalization, and spin-orbit engineering. Finally, we conclude with the future challenges and opportunities for 2D magnetism.

2D Magnetic Heterostructures and Their Interface Modulated Magnetism

In recent years, two-dimensional (2D) magnetic heterostructures have captured widespread interest as they provide a fertile ground for exploring the novel properties induced by interfacial magnetic coupling, modulating the intrinsic magnetism of the 2D magnet, and exploiting new spintronic device applications. In this Spotlight on Applications, dominating synthetic strategies employed to fabricate 2D magnetic heterostructures are introduced first. Notably, we then concentrate on two different kinds of magnetic interfaces, namely, the magnetic-nonmagnetic interface and the magnetic-magnetic interface. Specifically, various interface modulated magnetisms such as valley splitting and the anomalous Hall effect as well as their related device applications such as magnetic tunnel junctions have been further reviewed and discussed. Finally, we briefly summarize the recent progress of 2D magnetic heterostructures and outline the future development direction of this booming field.

The magnetic proximity effect at the MoS2/CrI3interface

The vicinity to a two-dimensional magnetic material provides a simple and effective way to break the valley degeneracy of transition-metal dichalcogenides because of the magnetic proximity effect. Based on first-principles calculations, we study the band structure of a MoS₂/CrI₃van der Waals heterostructure and its manipulation by vertical electric fields. A huge valley splitting of about 19.60 meV, equivalent to an external magnetic fields of about 89.0 T can be generated by an electric field of 0.115 V Å^-1. The electric field causes discontinuous changes in the valley splitting. The electric field drives the bands of MoS₂across those of CrI₃. At the critical electric fields, the interlayer orbital hybridization leads to the energy level repulsion and an abrupt exchange of the band index. We also study the effect of interlayer distance on the valley splitting and observe a more significant electric field modulation. This work deepens our understanding on the interfacial magnetic proximity effect as a result of the orbital hybridization across the van der Waals gap.

Two-Dimensional Van Der Waals Materials for Spin-Orbit Torque Applications

Spin-orbit torque (SOT) provides an efficient approach to control the magnetic state and dynamics in different classes of materials. Recent years, the crossover between two-dimensional van der Waals (2D vdW) materials and SOT opens a new prospect to push SOT devices to the 2D limit. In this mini-review, we summarize the latest progress in 2D vdW materials for SOT applications, highlighting the comparison of the performance between devices with various structures. It is prospected that the large family of 2D vdW materials and numerous combinations of heterostructures will widely extend the material choices and bring new opportunities to SOT devices in the future.

Van der Waals heterostructures for spintronics and opto-spintronics

The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here we provide an overview of recent progress in 2D spintronics and opto-spintronics using van der Waals heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multifunctional hybrid heterostructures based on van der Waals materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultracompact all-2D spin devices and their potential applications in conventional and quantum technologies.

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2

Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet Fe₅GeTe₂ (F5GT) into 5.4 nm (around two unit cells), we find that the ferromagnetism (FM) in F5GT can be substantially tuned by the thickness. Moreover, by utilizing a solid protonic gate, an electron doping concentration of above 10²¹ cm^-3 has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.

Emergence of Nontrivial Spin Textures in Frustrated Van Der Waals Ferromagnets

In this work, first principles ground state calculations are combined with the dynamic evolution of a classical spin Hamiltonian to study the metamagnetic transitions associated with the field dependence of magnetic properties in frustrated van der Waals ferromagnets. Dynamically stabilized spin textures are obtained relative to the direction of spin quantization as stochastic solutions of the Landau-Lifshitz-Gilbert-Slonczewski equation under the flow of the spin current. By explicitly considering the spin signatures that arise from geometrical frustrations at interfaces, we may observe the emergence of a magnetic skyrmion spin texture and characterize the formation under competing internal fields. The analysis of coercivity and magnetic hysteresis reveals a dynamic switch from a soft to hard magnetic configuration when considering the spin Hall effect on the skyrmion. It is found that heavy metals in capped multilayer heterostructure stacks host field-tunable spiral skyrmions that could serve as unique channels for carrier transport. The results are discussed to show the possibility of using dynamically switchable magnetic bits to read and write data without the need for a spin transfer torque. These results offer insight to the spin transport signatures that dynamically arise from metamagnetic transitions in spintronic devices.

Overcoming the asymmetry of the electron and hole doping for magnetic transitions in bilayer CrI3

Electrical control of magnetism has great potential for low-power spintronics applications and the newly discovered two-dimensional van der Waals magnetic materials are promising systems for this type of applications. In fact, it has been recently shown experimentally (Jiang et al., Nat. Nanotechnol., 2018, 13, 549-553) that upon electrostatic doping by electrons bilayer CrI3 undergoes an antiferromagnetic-ferromagnetic (AFM-FM) phase transition, even in the absence of magnetic field. Doping by holes, on the other hand, does not induce the same transition in the experiment, which points to an intrinsic asymmetry in the hole and electron doping that limits the control of the transition by doping. We here show, based on first-principles calculations, that the asymmetry originates in the relativistic nature of the valence-band-edge states of the pristine bilayer, which inhibits the magnetic transition upon hole doping. Based on this finding, we propose an approach to overcome the asymmetry and predict the existence of the AFM-FM transition for both hole and electron doping upon moderate uniaxial compression along the soft direction of the bilayer.

Quantum Spin Torque Driven Transmutation of an Antiferromagnetic Mott Insulator

The standard model of spin-transfer torque (STT) in antiferromagnetic spintronics considers the exchange of angular momentum between quantum spins of flowing electrons and noncollinear-to-them localized spins treated as classical vectors. These vectors are assumed to realize Néel order in equilibrium, ↑↓⋯↑↓, and their STT-driven dynamics is described by the Landau-Lifshitz-Gilbert (LLG) equation. However, many experimentally employed materials (such as archetypal NiO) are strongly electron-correlated antiferromagnetic Mott insulators (AFMIs) whose localized spins form a ground state quite different from the unentangled Néel state |↑↓⋯↑↓⟩. The true ground state is entangled by quantum spin fluctuations, leading to the expectation value of all localized spins being zero, so that LLG dynamics of classical vectors of fixed length rotating due to STT cannot even be initiated. Instead, a fully quantum treatment of both conduction electrons and localized spins is necessary to capture the exchange of spin angular momentum between them, denoted as quantum STT. We use a recently developed time-dependent density matrix renormalization group approach to quantum STT to predict how injection of a spin-polarized current pulse into a normal metal layer coupled to an AFMI overlayer via exchange interaction and possibly small interlayer hopping-mimicking, e.g., topological-insulator/NiO bilayer employed experimentally-will induce a nonzero expectation value of AFMI localized spins. This new nonequilibrium phase is a spatially inhomogeneous ferromagnet with a zigzag profile of localized spins. The total spin absorbed by AFMI increases with electron-electron repulsion in AFMIs, as well as when the two layers do not exchange any charge.

Antiferromagnetic proximity coupling between semiconductor quantum emitters in WSe2 and van der Waals ferromagnets

van der Waals ferromagnets have gained significant interest due to their unique ability to provide magnetic response even at the level of a few monolayers. Particularly in combination with 2D semiconductors, such as the transition metal dichalcogenide WSe2, one can create heterostructures that feature unique magneto-optical response in the exciton emission through the magnetic proximity effect. Here we use 0D quantum emitters in WSe2 to probe for the ferromagnetic response in heterostructures with Fe3GT and Fe5GT ferromagnets through an all-optical read-out technique that does not require electrodes. The spectrally narrow spin-doublet of the WSe2 quantum emitters allowed to fully resolve the hysteretic magneto-response in the exciton emission, revealing the characteristic signature of both ferro- and antiferromagnetic proximity coupling that originates from the interplay among Fe3GT or Fe5GT, a thin surface oxide, and the spin doublets of the quantum emitters. Our work highlights the utility of 0D quantum emitters for probing interface magnetic dipoles in vdW heterostructures with high precision. The observed hysteretic magneto response in the exciton emission of quantum emitters adds further new degrees of freedom for spin and g-factor manipulation of quantum states.

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

van der Waals (vdW) materials exhibit great potential in spintronics, arising from their excellent spin transportation, large spin-orbit coupling, and high-quality interfaces. The recent discovery of intrinsic vdW antiferromagnets and ferromagnets has laid the foundation for the construction of all-vdW spintronic devices, and enables the study of low-dimensional magnetism, which is of both technical and scientific significance. In this review, several representative families of vdW magnets are introduced, followed by a comprehensive summary of the methods utilized in reading out the magnetic states of vdW magnets. Thereafter, it is shown that various electrical, mechanical, and chemical approaches are employed to modulate the magnetism of vdW magnets. Finally, the perspective of vdW magnets in spintronics is discussed and an outlook of future development direction in this field is also proposed.

Swapping Exchange and Spin-Orbit Coupling in 2D van der Waals Heterostructures

The concept of swapping the two most important spin interactions-exchange and spin-orbit coupling-is proposed based on two-dimensional multilayer van der Waals heterostructures. Specifically, we show by performing realistic ab initio simulations, that a single device consisting of a bilayer graphene sandwiched by a 2D ferromagnet Cr_{2}Ge_{2}Te_{6} (CGT) and a monolayer WS_{2}, is able not only to generate, but also to swap the two interactions. The highly efficient swapping is enabled by the interplay of gate-dependent layer polarization in bilayer graphene and short-range spin-orbit and exchange proximity effects affecting only the layers in contact with the sandwiching materials. We call these structures ex-so-tic, for supplying either exchange (ex) or spin-orbit (so) coupling in a single device, by gating. Such bifunctional devices demonstrate the potential of van der Waals spintronics engineering using 2D crystal multilayers.

Magnetic Two-Dimensional Chromium Trihalides: A Theoretical Perspective

The discovery of ferromagnetic order in monolayer two-dimensional (2D) crystals has opened a new venue in the field of 2D materials. Two-dimensional magnets are not only interesting on their own, but their integration in van der Waals heterostructures allows for the observation of new and exotic effects in the ultrathin limit. The family of chromium trihalides, CrI₃, CrBr₃, and CrCl₃, is so far the most studied among magnetic 2D crystals. In this Mini Review, we provide a perspective of the state of the art of the theoretical understanding of magnetic 2D trihalides, most of which will also be relevant for other 2D magnets, such as vanadium trihalides. We discuss both the well-established facts, such as the origin of the magnetic moment and magnetic anisotropy, and address as well open issues such as the nature of the anisotropic spin couplings and the magnitude of the magnon gap. Recent theoretical predictions on Moiré magnets and magnetic skyrmions are also discussed. Finally, we give some prospects about the future interest of these materials and possible device applications.

Proximity-Coupling-Induced Significant Enhancement of Coercive Field and Curie Temperature in 2D van der Waals Heterostructures

Magnetism in 2D has long been the focus of condensed matter physics due to its important applications in spintronic devices. A particularly promising aspect of 2D magnetism is the ability to fabricate 2D heterostructures with engineered optical, electrical, and quantum properties. Recently, the discovery of intrinsic ferromagnetisms in atomic thick materials has provided a new platform for investigations of fundamental magnetic physics. In contrast to 2D CrI₃ and Cr₂ Ge₂ Te₆ insulators, itinerant ferromagnetic Fe₃ GeTe₂ (FGT), which has a larger intrinsic perpendicular anisotropy, higher Curie temperature (T_C ), and relatively better stability, is a promising candidate for achieving permanent room-temperature ferromagnetism through interface or component engineering. Here, it is shown that the ferromagnetic properties of FGT thin flakes can be modulated through coupling with a FePS₃ . The magneto-optical Kerr effect results show that the T_C of FGT is improved by more than 30 K and that the coercive field is increased by ≈100% due to the proximity coupling effect, which changes the spin textures of FGT at the interface. This work reveals that antiferromagnet/ferromagnet coupling is a promising way to engineer the magnetic properties of itinerant 2D ferromagnets, which paves the way for applications in advanced magnetic spintronic and memory devices.