1
|
Nieminen T, Koskinen T, Kornienko V, Ross G, Paulasto-Kröckel M. Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces. ACS APPLIED ELECTRONIC MATERIALS 2024; 6:2413-2419. [PMID: 38680727 PMCID: PMC11044587 DOI: 10.1021/acsaelm.4c00068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 03/30/2024] [Accepted: 03/31/2024] [Indexed: 05/01/2024]
Abstract
Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO2), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO2 as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer. Replacing SiO2 with a more thermally conductive material could yield immediate results for improved heat dissipation of SOI structures. However, the introduction of alternate materials creates unknown interfaces, which can have a large impact on the overall thermal conductivity of the structure. In this work, we studied a direct bonded AlN-to-SOI wafer (AlN-SOI) by measuring the thermal conductivity of AlN and the thermal boundary conductance (TBC) of silicon (Si)/AlN and Si/SiO2/aluminum-oxygen-nitrogen (AlON)/AlN interfaces, the latter of which were formed during plasma-activated bonding. The results show that the AlN-SOI possesses superior thermal properties to those of a traditional SOI wafer, with the thermal conductivity of AlN measured at roughly 40 W m-1 K-1 and the TBC of both interfaces at roughly 100 MW m-2 K-1. These results show that AlN-SOI is a very promising structure for improving heat dissipation in future microelectronics.
Collapse
Affiliation(s)
- Tarmo Nieminen
- Department
of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland
| | - Tomi Koskinen
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Vladimir Kornienko
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Glenn Ross
- Department
of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland
| | - Mervi Paulasto-Kröckel
- Department
of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland
| |
Collapse
|
2
|
Li R, Hussain K, Liao ME, Huynh K, Hoque MSB, Wyant S, Koh YR, Xu Z, Wang Y, Luccioni DP, Cheng Z, Shi J, Lee E, Graham S, Henry A, Hopkins PE, Goorsky MS, Khan MA, Luo T. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8109-8118. [PMID: 38315970 DOI: 10.1021/acsami.3c16905] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their impact on thermal transport across GaN/SiC interfaces. In this study, we present experimental measurements of the thermal boundary conductance (TBC) across GaN/SiC interfaces with varying thicknesses of the AlN transition layer (ranging from 0 to 73 nm) at different temperatures. Our findings reveal that the addition of an AlN transition layer leads to a notable increase in the TBC of the GaN/SiC interface, particularly at elevated temperatures. Structural characterization techniques are employed to understand the influence of the AlN transition layer on the crystalline quality of the GaN layer and its potential effects on interfacial thermal transport. To gain further insights into the trend of TBC, we conduct molecular dynamics simulations using high-fidelity deep learning-based interatomic potentials, which reproduce the experimentally observed enhancement in TBC even for atomically perfect interfaces. These results suggest that the enhanced TBC facilitated by the AlN intermediate layer could result from a combination of improved crystalline quality at the interface and the "phonon bridge" effect provided by AlN that enhances the overlap between the vibrational spectra of GaN and SiC.
Collapse
Affiliation(s)
- Ruiyang Li
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kamal Hussain
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Michael E Liao
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Kenny Huynh
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Spencer Wyant
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Zhihao Xu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Yekan Wang
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Dorian P Luccioni
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Jingjing Shi
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Eungkyu Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin-si 17104, Gyeonggi-do, South Korea
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Asegun Henry
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Mark S Goorsky
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - M Asif Khan
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
- Center for Sustainable Energy of Notre Dame (ND Energy), University of Notre Dame, Notre Dame, Indiana 46556, United States
| |
Collapse
|
3
|
Perez C, McLeod AJ, Chen ME, Yi SI, Vaziri S, Hood R, Ueda ST, Bao X, Asheghi M, Park W, Talin AA, Kumar S, Pop E, Kummel AC, Goodson KE. High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature. ACS NANO 2023; 17:21240-21250. [PMID: 37796248 DOI: 10.1021/acsnano.3c05485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/06/2023]
Abstract
Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent thermal conductivity, but high-quality films typically require exceedingly hot deposition temperatures (>1000 °C). For thermal management applications in dense or high-power integrated circuits, it is important to deposit heat spreaders at low temperatures (<500 °C), without affecting the underlying electronics. Here, we demonstrate 100 nm to 1.7 μm thick AlN films achieved by low-temperature (<100 °C) sputtering, correlating their thermal properties with their grain size and interfacial quality, which we analyze by X-ray diffraction, transmission X-ray microscopy, as well as Raman and Auger spectroscopy. Controlling the deposition conditions through the partial pressure of reactive N2, we achieve an ∼3× variation in thermal conductivity (∼36-104 W m-1 K-1) of ∼600 nm films, with the upper range representing one of the highest values for such film thicknesses at room temperature, especially at deposition temperatures below 100 °C. Defect densities are also estimated from the thermal conductivity measurements, providing insight into the thermal engineering of AlN that can be optimized for application-specific heat spreading or thermal confinement.
Collapse
Affiliation(s)
- Christopher Perez
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
- Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States
| | - Aaron J McLeod
- Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093, United States
| | - Michelle E Chen
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Su-In Yi
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Sam Vaziri
- Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States
| | - Ryan Hood
- Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States
| | - Scott T Ueda
- Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, United States
| | - Xinyu Bao
- Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States
| | - Mehdi Asheghi
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - Woosung Park
- Division of Mechanical Systems Engineering, Sookmyung Women's University, Seoul 04310, South Korea
| | - A Alec Talin
- Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States
| | - Suhas Kumar
- Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States
| | - Eric Pop
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Andrew C Kummel
- Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093, United States
| | - Kenneth E Goodson
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| |
Collapse
|
4
|
Kim J, Kim JY, Ahn H, Jeong MH, Lee E, Cho K, Lee SM, Shim W, Pee JH. Direct Evidence on Effect of Oxygen Dissolution on Thermal and Electrical Conductivity of AlN Ceramics Using Al Solid-State NMR Analysis. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8125. [PMID: 36431611 PMCID: PMC9695506 DOI: 10.3390/ma15228125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 11/10/2022] [Accepted: 11/10/2022] [Indexed: 06/16/2023]
Abstract
Aluminum nitride, with its high thermal conductivity and insulating properties, is a promising candidate as a thermal dissipation material in optoelectronics and high-power logic devices. In this work, we have shown that the thermal conductivity and electrical resistivity of AlN ceramics are primarily governed by ionic defects created by oxygen dissolved in AlN grains, which are directly probed using 27Al NMR spectroscopy. We find that a 4-coordinated AlN3O defect (ON) in the AlN lattice is changed to intermediate AlNO3, and further to 6-coordinated AlO6 with decreasing oxygen concentration. As the aluminum vacancy (VAl) defect, which is detrimental to thermal conductivity, is removed, the overall thermal conductivity is improved from 120 to 160 W/mK because of the relatively minor effect of the AlO6 defect on thermal conductivity. With the same total oxygen content, as the AlN3O defect concentration decreases, thermal conductivity increases. The electrical resistivity of our AlN ceramics also increases with the removal of oxygen because the major ionic carrier is VAl. Our results show that to enhance the thermal conductivity and electrical resistivity of AlN ceramics, the dissolved oxygen in AlN grains should be removed first. This understanding of the local structure of Al-related defects enables us to design new thermal dissipation materials.
Collapse
Affiliation(s)
- Jaegyeom Kim
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
| | - Jong-Young Kim
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
| | - Heewon Ahn
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
| | - Mu Hyeok Jeong
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
- Department of Materials Sciences & Engineering, Multiscale Materials Laboratory, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 37022, Republic of Korea
| | - Eunsil Lee
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
- Department of Materials Sciences & Engineering, Multiscale Materials Laboratory, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 37022, Republic of Korea
| | - Keonhee Cho
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
| | - Sung-Min Lee
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
| | - Wooyoung Shim
- Department of Materials Sciences & Engineering, Multiscale Materials Laboratory, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 37022, Republic of Korea
| | - Jae-Hwan Pee
- Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), 3321, Gyeongchung Rd., Sindun-Myeon, Icheon-si 467-843, Gyeonggi-do, Republic of Korea
| |
Collapse
|
5
|
Lee Sanchez WA, Li JW, Chiu HT, Cheng CC, Chiou KC, Lee TM, Chiu CW. Highly Thermally Conductive Epoxy Composites with AlN/BN Hybrid Filler as Underfill Encapsulation Material for Electronic Packaging. Polymers (Basel) 2022; 14:2950. [PMID: 35890726 PMCID: PMC9320615 DOI: 10.3390/polym14142950] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 07/15/2022] [Accepted: 07/18/2022] [Indexed: 12/23/2022] Open
Abstract
In this study, the effects of a hybrid filler composed of zero-dimensional spherical AlN particles and two-dimensional BN flakes on the thermal conductivity of epoxy resin were studied. The thermal conductivity (TC) of the pristine epoxy matrix (EP) was 0.22 W/(m K), while the composite showed the TC of 10.18 W/(m K) at the 75 wt% AlN-BN hybrid filler loading, which is approximately a 46-fold increase. Moreover, various essential application properties were examined, such as the viscosity, cooling rate, coefficient of thermal expansion (CTE), morphology, and electrical properties. In particular, the AlN-BN/EP composite showed higher thermal stability and lower CTE (22.56 ppm/°C) than pure epoxy. Overall, the demonstrated outstanding thermal performance is appropriate for the production of electronic packaging materials, including next-generation flip-chip underfills.
Collapse
Affiliation(s)
- William Anderson Lee Sanchez
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan; (W.A.L.S.); (J.-W.L.); (H.-T.C.)
| | - Jia-Wun Li
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan; (W.A.L.S.); (J.-W.L.); (H.-T.C.)
| | - Hsien-Tang Chiu
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan; (W.A.L.S.); (J.-W.L.); (H.-T.C.)
| | - Chih-Chia Cheng
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;
| | - Kuo-Chan Chiou
- Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan; (K.-C.C.); (T.-M.L.)
| | - Tzong-Ming Lee
- Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan; (K.-C.C.); (T.-M.L.)
| | - Chih-Wei Chiu
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan; (W.A.L.S.); (J.-W.L.); (H.-T.C.)
| |
Collapse
|
6
|
Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate. CRYSTALS 2021. [DOI: 10.3390/cryst12010038] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.
Collapse
|
7
|
Hoque MSB, Koh YR, Braun JL, Mamun A, Liu Z, Huynh K, Liao ME, Hussain K, Cheng Z, Hoglund ER, Olson DH, Tomko JA, Aryana K, Galib R, Gaskins JT, Elahi MMM, Leseman ZC, Howe JM, Luo T, Graham S, Goorsky MS, Khan A, Hopkins PE. High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films. ACS NANO 2021; 15:9588-9599. [PMID: 33908771 DOI: 10.1021/acsnano.0c09915] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
High thermal conductivity materials show promise for thermal mitigation and heat removal in devices. However, shrinking the length scales of these materials often leads to significant reductions in thermal conductivities, thus invalidating their applicability to functional devices. In this work, we report on high in-plane thermal conductivities of 3.05, 3.75, and 6 μm thick aluminum nitride (AlN) films measured via steady-state thermoreflectance. At room temperature, the AlN films possess an in-plane thermal conductivity of ∼260 ± 40 W m-1 K-1, one of the highest reported to date for any thin film material of equivalent thickness. At low temperatures, the in-plane thermal conductivities of the AlN films surpass even those of diamond thin films. Phonon-phonon scattering drives the in-plane thermal transport of these AlN thin films, leading to an increase in thermal conductivity as temperature decreases. This is opposite of what is observed in traditional high thermal conductivity thin films, where boundaries and defects that arise from film growth cause a thermal conductivity reduction with decreasing temperature. This study provides insight into the interplay among boundary, defect, and phonon-phonon scattering that drives the high in-plane thermal conductivity of the AlN thin films and demonstrates that these AlN films are promising materials for heat spreaders in electronic devices.
Collapse
Affiliation(s)
- Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Abdullah Mamun
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Zeyu Liu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kenny Huynh
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Michael E Liao
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Kamal Hussain
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - David H Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John A Tomko
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Kiumars Aryana
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Roisul Galib
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Mirza Mohammad Mahbube Elahi
- Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131, United States
| | - Zayd C Leseman
- Department of Mechanical Engineering, and Interdisciplinary Research Center for Advanced Materials, King Fahd University of Petroleum & Minerals, Dhahran, Eastern Province 31261, Saudi Arabia
| | - James M Howe
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Mark S Goorsky
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Asif Khan
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
| |
Collapse
|
8
|
Hoque MSB, Koh YR, Aryana K, Hoglund ER, Braun JL, Olson DH, Gaskins JT, Ahmad H, Elahi MMM, Hite JK, Leseman ZC, Doolittle WA, Hopkins PE. Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:064906. [PMID: 34243549 DOI: 10.1063/5.0049531] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Accepted: 06/06/2021] [Indexed: 06/13/2023]
Abstract
Measuring the thermal conductivity of sub-surface buried substrates is of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths. Here, we experimentally and numerically investigate the TPD of the recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD (i.e., the depth at which temperature drops to 1/e value of the maximum surface temperature) does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates that are traditionally challenging by transient pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries.
Collapse
Affiliation(s)
- Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Kiumars Aryana
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - David H Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Habib Ahmad
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | | | | | - Zayd C Leseman
- Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran, Eastern Province 31261, Saudi Arabia
| | - W Alan Doolittle
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| |
Collapse
|
9
|
Song Y, Perez C, Esteves G, Lundh JS, Saltonstall CB, Beechem TE, Yang JI, Ferri K, Brown JE, Tang Z, Maria JP, Snyder DW, Olsson RH, Griffin BA, Trolier-McKinstry SE, Foley BM, Choi S. Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond. ACS APPLIED MATERIALS & INTERFACES 2021; 13:19031-19041. [PMID: 33851815 DOI: 10.1021/acsami.1c02912] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1-xScxN are replacing AlN-based devices because of their higher achievable bandwidths, suitable for the fifth-generation (5G) mobile network. However, overheating of Al1-xScxN film bulk acoustic resonators (FBARs) used in RF MEMS filters limits power handling and thus the phone's ability to operate in an increasingly congested RF environment while maintaining its maximum data transmission rate. In this work, the ramifications of tailoring of the piezoelectric response and microstructure of Al1-xScxN films on the thermal transport have been studied. The thermal conductivity of Al1-xScxN films (3-8 W m-1 K-1) grown by reactive sputter deposition was found to be orders of magnitude lower than that for c-axis-textured AlN films due to alloying effects. The film thickness dependence of the thermal conductivity suggests that higher frequency FBAR structures may suffer from limited power handling due to exacerbated overheating concerns. The reduction of the abnormally oriented grain (AOG) density was found to have a modest effect on the measured thermal conductivity. However, the use of low AOG density films resulted in lower insertion loss and thus less power dissipated within the resonator, which will lead to an overall enhancement of the device thermal performance.
Collapse
Affiliation(s)
- Yiwen Song
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Carlos Perez
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Giovanni Esteves
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - James Spencer Lundh
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | | | - Thomas E Beechem
- Center for Integrated Nanotechnologies, Albuquerque, New Mexico 87185, United States
| | - Jung In Yang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kevin Ferri
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joseph E Brown
- Electronic Materials and Devices Department, Applied Research Laboratory, University Park, University Park, Pennsylvania 16802, United States
| | - Zichen Tang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jon-Paul Maria
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - David W Snyder
- Electronic Materials and Devices Department, Applied Research Laboratory, University Park, University Park, Pennsylvania 16802, United States
| | - Roy H Olsson
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Benjamin A Griffin
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Susan E Trolier-McKinstry
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Brian M Foley
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Sukwon Choi
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| |
Collapse
|
10
|
Koh YR, Lu H, Gossard AC, Shakouri A. Anisotropic thermal conductivity of the nanoparticles embedded GaSb thin film semiconductor. NANOTECHNOLOGY 2021; 32:035702. [PMID: 32906112 DOI: 10.1088/1361-6528/abb6a3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The prior theoretical model shows that GaSb is one of the few non-alloy semiconductors showing phonons ballistic effect in the thermal conductivity. However, no previous literature had been reported on the experimental measurements on the quasi-ballistic thermal transport of the GaSb thin film. In this paper, we employed the time-domain thermoreflectance (TDTR) to study the thermal transport of nanoparticles embedded GaSb thin film. Our measurements results provide first experimental evidence to verify the quasi-ballistic effect in the thermal transport of the GaSb thin film. The apparent cross-plane thermal conductivity of pure GaSb sample drops ∼15% when the pump laser modulation frequency is increased from 0.8 MHz to 10 MHz at room temperature. To further understand the thermal transport mechanism, Tempered Lévy analysis is employed to study the quasi-ballistic effect of the GaSb thin film. The model shows that GaSb thin film thermal transport has a superdiffusion exponent, [Formula: see text] = 1.51 ± 0.23 and Lévy-Fourier transition length, r LF = 0.19 ± 0.13 µm. Both obtained values via Tempered Lévy indicates the quasi-ballistic transport phenomena in GaSb thin film. However, this frequency dependence of the cross-plane thermal conductivity will disappear in the presence of the 3%-20% ErSb nanoparticles. Another thermal transport mechanism, i.e. anisotropic thermal transport, can be observed in GaSb thin film. The ratio of in- to cross-plane thermal conductivity varies from ∼0.2 to ∼0.7 in the 0%-20% ErSb nanoparticles volume concentrations. Detailed temperature dependence of the in-plane thermal conductivity of ErSb:GaSb samples with 0%-20% are also included in the paper for the understanding of the scattering mechanism in the thin film thermal transport. With enhanced understanding of the quasi-ballistic and anisotropic thin film thermal transport, our results might improve the thermal management efficiency of the GaSb devices.
Collapse
Affiliation(s)
- Yee Rui Koh
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States of America
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States of America
| | - Hong Lu
- Materials Department, University of California, Santa Barbara, CA 93106, United States of America
- College of Engineering and Applied Sciences, Nanjing University, People's Republic of China
| | - Arthur C Gossard
- Materials Department, University of California, Santa Barbara, CA 93106, United States of America
| | - Ali Shakouri
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States of America
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States of America
| |
Collapse
|