1
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Li R, Hussain K, Liao ME, Huynh K, Hoque MSB, Wyant S, Koh YR, Xu Z, Wang Y, Luccioni DP, Cheng Z, Shi J, Lee E, Graham S, Henry A, Hopkins PE, Goorsky MS, Khan MA, Luo T. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers. ACS Appl Mater Interfaces 2024; 16:8109-8118. [PMID: 38315970 DOI: 10.1021/acsami.3c16905] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their impact on thermal transport across GaN/SiC interfaces. In this study, we present experimental measurements of the thermal boundary conductance (TBC) across GaN/SiC interfaces with varying thicknesses of the AlN transition layer (ranging from 0 to 73 nm) at different temperatures. Our findings reveal that the addition of an AlN transition layer leads to a notable increase in the TBC of the GaN/SiC interface, particularly at elevated temperatures. Structural characterization techniques are employed to understand the influence of the AlN transition layer on the crystalline quality of the GaN layer and its potential effects on interfacial thermal transport. To gain further insights into the trend of TBC, we conduct molecular dynamics simulations using high-fidelity deep learning-based interatomic potentials, which reproduce the experimentally observed enhancement in TBC even for atomically perfect interfaces. These results suggest that the enhanced TBC facilitated by the AlN intermediate layer could result from a combination of improved crystalline quality at the interface and the "phonon bridge" effect provided by AlN that enhances the overlap between the vibrational spectra of GaN and SiC.
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Affiliation(s)
- Ruiyang Li
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kamal Hussain
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Michael E Liao
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Kenny Huynh
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Spencer Wyant
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Zhihao Xu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Yekan Wang
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Dorian P Luccioni
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Jingjing Shi
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Eungkyu Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin-si 17104, Gyeonggi-do, South Korea
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Asegun Henry
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Mark S Goorsky
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - M Asif Khan
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
- Center for Sustainable Energy of Notre Dame (ND Energy), University of Notre Dame, Notre Dame, Indiana 46556, United States
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2
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Tanaka K, Arias P, Hojo K, Watanabe T, Liao ME, Aleman A, Zaid H, Goorsky MS, Kodambaka SK. Borazine Promoted Growth of Highly Oriented Thin Films. Nano Lett 2023; 23:4304-4310. [PMID: 37130244 DOI: 10.1021/acs.nanolett.3c00514] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
We report on a phenomenon, where thin films sputter-deposited on single-crystalline Al2O3(0001) substrates exposed to borazine─a precursor commonly used for the synthesis of hexagonal boron nitride layers─are more highly oriented than those grown on bare Al2O3(0001) under the same conditions. We observed this phenomenon in face-centered cubic Pd, body-centered cubic Mo, and trigonal Ta2C thin films grown on Al2O3(0001). Interestingly, intermittent exposure to borazine during the growth of Ta2C thin films on Ta2C yields better crystallinity than direct deposition of monolithic Ta2C. We attribute these rather unusual results to a combination of both enhanced adatom mobilities on, and epitaxial registry with, surfaces exposed to borazine during the deposition. We expect that our approach can potentially help improve the crystalline quality of thin films deposited on a variety of substrates.
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Affiliation(s)
- Koichi Tanaka
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Pedro Arias
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Koki Hojo
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- Graduate Department of Micro-Nano Mechanical Science and Engineering, Nagoya University, Furo-cho, Nagoya, Aichi 464-8601, Japan
| | - Tomoyasu Watanabe
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- Graduate Department of Micro-Nano Mechanical Science and Engineering, Nagoya University, Furo-cho, Nagoya, Aichi 464-8601, Japan
| | - Michael E Liao
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Angel Aleman
- Department of Mechanical and Aerospace Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Hicham Zaid
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Mark S Goorsky
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Suneel Kumar Kodambaka
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, United States
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3
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Liao ME, Li C, Shah N, Hsiao YH, Bauchy M, Sant G, Goorsky MS. Experimental evidence of auxeticity in ion implanted single crystal calcite. Sci Rep 2022; 12:6071. [PMID: 35414648 PMCID: PMC9005521 DOI: 10.1038/s41598-022-10177-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2021] [Accepted: 03/25/2022] [Indexed: 11/28/2022] Open
Abstract
We report initial experimental evidence of auxeticity in calcite by ion implanting (1010) oriented single crystalline calcite with Ar+ at room temperature using an ion energy of 400 keV and a dose of 1 × 1014 cm−2. Lattice compression normal to the substrate surface was observed, which is an atypical result for ion implanted materials. The auxetic behavior is consistent with predictions that indicate auxeticity had been predicted along two crystallographic directions including [1010]. Materials with a positive Poisson’s ratio experience lattice expansion normal to the substrate surface when ion implanted, whereas lattice contraction normal to the surface is evidence of auxetic behavior. Triple-axis X-ray diffraction measurements confirmed the auxetic strain state of the implanted calcite substrates. Reciprocal space maps for the symmetric 3030 and asymmetric 1450 reflections revealed that the implanted region was fully strained (pseudomorphic) to the bulk of the substrate, as is typical with implanted single crystals. A symmetric (3030) ω:2θ line scan was used with X-ray dynamical diffraction simulations to model the strain profile and extract the variation of compressive strain as a function of depth normal to the substrate surface. SRIM calculations were performed to obtain a displacement-per-atom profile and implanted Ar+ concentration profile. It was found that the strain profile matches the displacement-per-atom profile. This study demonstrated the use of ion implantation and X-ray diffraction methods to probe mechanical properties of materials and to test predictions such as the auxeticity.
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Affiliation(s)
- Michael E Liao
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA.
| | - Chao Li
- Applied Materials, Santa Clara, CA, 95054, USA
| | - Nachiket Shah
- Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | | | - Mathieu Bauchy
- Civil and Environmental Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Gaurav Sant
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA.,Civil and Environmental Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Mark S Goorsky
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
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4
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Cheng Z, Li R, Yan X, Jernigan G, Shi J, Liao ME, Hines NJ, Gadre CA, Idrobo JC, Lee E, Hobart KD, Goorsky MS, Pan X, Luo T, Graham S. Experimental observation of localized interfacial phonon modes. Nat Commun 2021; 12:6901. [PMID: 34824284 PMCID: PMC8617064 DOI: 10.1038/s41467-021-27250-3] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Accepted: 11/09/2021] [Indexed: 12/03/2022] Open
Abstract
Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance. Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy-resolution electron energy-loss spectroscopy in a scanning transmission electron microscope, we report the experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield thermal boundary conductance agreeing well with that measured in time-domain thermoreflectance experiments. Simulations find that the interfacial phonon modes have an obvious contribution to the total thermal boundary conductance. Our findings significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering thermal boundary conductance at interfaces in applications such as electronics thermal management and thermoelectric energy conversion.
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Affiliation(s)
- Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ruiyang Li
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Xingxu Yan
- Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Glenn Jernigan
- U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, USA
| | - Jingjing Shi
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Michael E Liao
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Nicholas J Hines
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Chaitanya A Gadre
- Department of Physics and Astronomy, University of California, Irvine, CA, 92617, USA
| | - Juan Carlos Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Eungkyu Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin-si, Gyeonggi-do, 17104, South Korea
| | - Karl D Hobart
- U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, USA
| | - Mark S Goorsky
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA.
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA.
- Department of Physics and Astronomy, University of California, Irvine, CA, 92617, USA.
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
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5
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Hoque MSB, Koh YR, Braun JL, Mamun A, Liu Z, Huynh K, Liao ME, Hussain K, Cheng Z, Hoglund ER, Olson DH, Tomko JA, Aryana K, Galib R, Gaskins JT, Elahi MMM, Leseman ZC, Howe JM, Luo T, Graham S, Goorsky MS, Khan A, Hopkins PE. High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films. ACS Nano 2021; 15:9588-9599. [PMID: 33908771 DOI: 10.1021/acsnano.0c09915] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
High thermal conductivity materials show promise for thermal mitigation and heat removal in devices. However, shrinking the length scales of these materials often leads to significant reductions in thermal conductivities, thus invalidating their applicability to functional devices. In this work, we report on high in-plane thermal conductivities of 3.05, 3.75, and 6 μm thick aluminum nitride (AlN) films measured via steady-state thermoreflectance. At room temperature, the AlN films possess an in-plane thermal conductivity of ∼260 ± 40 W m-1 K-1, one of the highest reported to date for any thin film material of equivalent thickness. At low temperatures, the in-plane thermal conductivities of the AlN films surpass even those of diamond thin films. Phonon-phonon scattering drives the in-plane thermal transport of these AlN thin films, leading to an increase in thermal conductivity as temperature decreases. This is opposite of what is observed in traditional high thermal conductivity thin films, where boundaries and defects that arise from film growth cause a thermal conductivity reduction with decreasing temperature. This study provides insight into the interplay among boundary, defect, and phonon-phonon scattering that drives the high in-plane thermal conductivity of the AlN thin films and demonstrates that these AlN films are promising materials for heat spreaders in electronic devices.
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Affiliation(s)
- Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Abdullah Mamun
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Zeyu Liu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kenny Huynh
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Michael E Liao
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Kamal Hussain
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - David H Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John A Tomko
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Kiumars Aryana
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Roisul Galib
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Mirza Mohammad Mahbube Elahi
- Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131, United States
| | - Zayd C Leseman
- Department of Mechanical Engineering, and Interdisciplinary Research Center for Advanced Materials, King Fahd University of Petroleum & Minerals, Dhahran, Eastern Province 31261, Saudi Arabia
| | - James M Howe
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Mark S Goorsky
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Asif Khan
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
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6
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Tan S, Huang T, Yavuz I, Wang R, Weber MH, Zhao Y, Abdelsamie M, Liao ME, Wang HC, Huynh K, Wei KH, Xue J, Babbe F, Goorsky MS, Lee JW, Sutter-Fella CM, Yang Y. Surface Reconstruction of Halide Perovskites During Post-treatment. J Am Chem Soc 2021; 143:6781-6786. [PMID: 33915050 DOI: 10.1021/jacs.1c00757] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Postfabrication surface treatment strategies have been instrumental to the stability and performance improvements of halide perovskite photovoltaics in recent years. However, a consensus understanding of the complex reconstruction processes occurring at the surface is still lacking. Here, we combined complementary surface-sensitive and depth-resolved techniques to investigate the mechanistic reconstruction of the perovskite surface at the microscale level. We observed a reconstruction toward a more PbI2-rich top surface induced by the commonly used solvent isopropyl alcohol (IPA). We discuss several implications of this reconstruction on the surface thermodynamics and energetics. Particularly, our observations suggest that IPA assists in the adsorption process of organic ammonium salts to the surface to enhance their defect passivation effects.
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Affiliation(s)
- Shaun Tan
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States.,Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Tianyi Huang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States.,Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ilhan Yavuz
- Department of Physics, Marmara University, 34722, Ziverbey, Istanbul, Turkey
| | - Rui Wang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Marc H Weber
- Center for Materials Research, Washington State University, Pullman, Washington 99164, United States
| | - Yepin Zhao
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Maged Abdelsamie
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Michael E Liao
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Hao-Cheng Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Kenny Huynh
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Kung-Hwa Wei
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Jingjing Xue
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Finn Babbe
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Mark S Goorsky
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Jin-Wook Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nanoengineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Carolin M Sutter-Fella
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.,Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Yang Yang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
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7
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Lee JW, Tan S, Han TH, Wang R, Zhang L, Park C, Yoon M, Choi C, Xu M, Liao ME, Lee SJ, Nuryyeva S, Zhu C, Huynh K, Goorsky MS, Huang Y, Pan X, Yang Y. Author Correction: Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite. Nat Commun 2020; 11:5880. [PMID: 33184274 PMCID: PMC7661531 DOI: 10.1038/s41467-020-19846-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/02/2022] Open
Affiliation(s)
- Jin-Wook Lee
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA. .,Department of Nanoengineering, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
| | - Shaun Tan
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Tae-Hee Han
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.,Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Rui Wang
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Lizhi Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Changwon Park
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Mina Yoon
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Chungseok Choi
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Mingjie Xu
- Department of Materials Science and Engineering, Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Michael E Liao
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Sung-Joon Lee
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Selbi Nuryyeva
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Chenhui Zhu
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94704, USA
| | - Kenny Huynh
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Mark S Goorsky
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yu Huang
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Yang Yang
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
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8
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Lee JW, Tan S, Han TH, Wang R, Zhang L, Park C, Yoon M, Choi C, Xu M, Liao ME, Lee SJ, Nuryyeva S, Zhu C, Huynh K, Goorsky MS, Huang Y, Pan X, Yang Y. Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite. Nat Commun 2020; 11:5514. [PMID: 33139740 PMCID: PMC7608657 DOI: 10.1038/s41467-020-19237-3] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Accepted: 10/01/2020] [Indexed: 12/04/2022] Open
Abstract
Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI3) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI3 from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI3 showed efficiencies and stabilities superior to those of devices fabricated without NHE. Though literature reports metal halide perovskite epitaxial growth on various substrates, controlling film growth for device applications remains a challenge. Here, the authors report kinetic-controlled growth of halide perovskite thin films on various substrates via layered perovskite templates.
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Affiliation(s)
- Jin-Wook Lee
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA. .,Department of Nanoengineering, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
| | - Shaun Tan
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Tae-Hee Han
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.,Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Rui Wang
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Lizhi Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Changwon Park
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Mina Yoon
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Chungseok Choi
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Mingjie Xu
- Department of Materials Science and Engineering, Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Michael E Liao
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Sung-Joon Lee
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Selbi Nuryyeva
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Chenhui Zhu
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94704, USA
| | - Kenny Huynh
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Mark S Goorsky
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yu Huang
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Yang Yang
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
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9
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Cheng Z, Mu F, You T, Xu W, Shi J, Liao ME, Wang Y, Huynh K, Suga T, Goorsky MS, Ou X, Graham S. Thermal Transport across Ion-Cut Monocrystalline β-Ga 2O 3 Thin Films and Bonded β-Ga 2O 3-SiC Interfaces. ACS Appl Mater Interfaces 2020; 12:44943-44951. [PMID: 32909730 DOI: 10.1021/acsami.0c11672] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-Ga2O3 promising for applications of next-generation power electronics, while its thermal conductivity is at least 1 order of magnitude lower than other wide/ultrawide band gap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, proper thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline β-Ga2O3 thin films on high thermal conductivity SiC substrates by the ion-cutting technique and room-temperature surface-activated bonding technique. The thermal boundary conductance (TBC) of the β-Ga2O3-SiC interfaces and thermal conductivity of the β-Ga2O3 thin films were measured by time-domain thermoreflectance to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the β-Ga2O3-SiC TBC values are reasonably high and increase with decreasing interlayer thickness. The β-Ga2O3 thermal conductivity increases more than twice after annealing at 800 °C because of the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and provides a platform for β-Ga2O3-related semiconductor devices with excellent thermal dissipation.
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Affiliation(s)
- Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Fengwen Mu
- Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051, Japan
- Collaborative Research Center, Meisei University, Hino-shi, Tokyo 191-8506, Japan
| | - Tiangui You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Wenhui Xu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jingjing Shi
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Michael E Liao
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Yekan Wang
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Kenny Huynh
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Tadatomo Suga
- Collaborative Research Center, Meisei University, Hino-shi, Tokyo 191-8506, Japan
| | - Mark S Goorsky
- Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xin Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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10
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Tanaka K, Aleman A, Zaid H, Liao ME, Hojo K, Wang Y, Goorsky MS, Kodambaka S. Ultra-high vacuum dc magnetron sputter-deposition of 0001-textured trigonal α-Ta 2C/Al 2O 3(0001) thin films. Materialia (Oxf) 2020; 13:100838. [PMID: 36408369 PMCID: PMC9671384 DOI: 10.1016/j.mtla.2020.100838] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
We report on the effects of substrate temperature (1073 K ≤ T s ≤ 1373 K) and deposition time t (= 3 ~ 30 min.) on the crystallinity of Ta2C/Al2O3(0001) thin films grown via ultra-high vacuum direct current magnetron sputtering of TaC target in 20 mTorr (2.7 Pa) pure Ar atmospheres. Using X-ray diffraction and transmission electron microscopy, we determine that the layers are 0001-oriented, trigonal-structured α-Ta2C at all T s. With increasing T s, we obtain smoother and thinner layers with enhanced out-of-plane coherency and decreasing unit cell volume. Interestingly, the Ta2C 0001 texture improves with increasing T s up to 1273 K above which the layers are relatively more polycrystalline. At T s = 1373 K, during early stages of deposition, the Ta2C layers grow heteroepitaxially on Al2O3(0001) with ( 0001 ) Ta 2 C ‖ ( 0001 ) Al 2 O 3 and [ 10 1 ¯ 0 ] Ta 2 C ‖ [ 11 2 ¯ 0 ] Al 2 O 3 . With increasing t, we observe the formation of anti-phase domains and misoriented grains resulting in polycrystalline layers. We attribute the observed enhancement in 0001 texture to increased surface adatom mobilities and the development of polycrystallinity to reduced incorporation of C in the lattice with increasing T s. We expect that our results help develop methods for the synthesis of high-quality Ta2C thin films.
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Affiliation(s)
- Koichi Tanaka
- Department of Materials Science and Engineering, University of California Los Angeles 410 Westwood Plaza, Los Angeles, CA 90095, USA
- Corresponding Author, , Postal address: Engineering V 3111, 410 Westwood Plaza, Los Angeles, CA 90095, Tel: 310-848-7664
| | - Angel Aleman
- Department of Mechanical and Aerospace Engineering, University of California Los Angeles, 420 Westwood Plaza, Los Angeles, CA 90095, USA
| | - Hicham Zaid
- Department of Materials Science and Engineering, University of California Los Angeles 410 Westwood Plaza, Los Angeles, CA 90095, USA
| | - Michael E. Liao
- Department of Materials Science and Engineering, University of California Los Angeles 410 Westwood Plaza, Los Angeles, CA 90095, USA
| | - Koki Hojo
- Graduate Department of Micro-Nano Mechanical Science and Engineering, Nagoya University, Furo-cho, Nagoya, Japan
| | - Yekan Wang
- Department of Materials Science and Engineering, University of California Los Angeles 410 Westwood Plaza, Los Angeles, CA 90095, USA
| | - Mark S. Goorsky
- Department of Materials Science and Engineering, University of California Los Angeles 410 Westwood Plaza, Los Angeles, CA 90095, USA
| | - Suneel Kodambaka
- Department of Materials Science and Engineering, University of California Los Angeles 410 Westwood Plaza, Los Angeles, CA 90095, USA
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11
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Koh YR, Cheng Z, Mamun A, Bin Hoque MS, Liu Z, Bai T, Hussain K, Liao ME, Li R, Gaskins JT, Giri A, Tomko J, Braun JL, Gaevski M, Lee E, Yates L, Goorsky MS, Luo T, Khan A, Graham S, Hopkins PE. Bulk-like Intrinsic Phonon Thermal Conductivity of Micrometer-Thick AlN Films. ACS Appl Mater Interfaces 2020; 12:29443-29450. [PMID: 32491824 DOI: 10.1021/acsami.0c03978] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Aluminum nitride (AlN) has garnered much attention due to its intrinsically high thermal conductivity. However, engineering thin films of AlN with these high thermal conductivities can be challenging due to vacancies and defects that can form during the synthesis. In this work, we report on the cross-plane thermal conductivity of ultra-high-purity single-crystal AlN films with different thicknesses (∼3-22 μm) via time-domain thermoreflectance (TDTR) and steady-state thermoreflectance (SSTR) from 80 to 500 K. At room temperature, we report a thermal conductivity of ∼320 ± 42 W m-1 K-1, surpassing the values of prior measurements on AlN thin films and one of the highest cross-plane thermal conductivities of any material for films with equivalent thicknesses, surpassed only by diamond. By conducting first-principles calculations, we show that the thermal conductivity measurements on our thin films in the 250-500 K temperature range agree well with the predicted values for the bulk thermal conductivity of pure single-crystal AlN. Thus, our results demonstrate the viability of high-quality AlN films as promising candidates for the high-thermal-conductivity layers in high-power microelectronic devices. Our results also provide insight into the intrinsic thermal conductivity of thin films and the nature of phonon-boundary scattering in single-crystal epitaxially grown AlN thin films. The measured thermal conductivities in high-quality AlN thin films are found to be constant and similar to bulk AlN, regardless of the thermal penetration depth, film thickness, or laser spot size, even when these characteristic length scales are less than the mean free paths of a considerable portion of thermal phonons. Collectively, our data suggest that the intrinsic thermal conductivity of thin films with thicknesses less than the thermal phonon mean free paths is the same as bulk so long as the thermal conductivity of the film is sampled independent of the film/substrate interface.
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Affiliation(s)
- Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Abdullah Mamun
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Zeyu Liu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Tingyu Bai
- Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
| | - Kamal Hussain
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Michael E Liao
- Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
| | - Ruiyang Li
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Ashutosh Giri
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John Tomko
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Mikhail Gaevski
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Eungkyu Lee
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Luke Yates
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Mark S Goorsky
- Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Asif Khan
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
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