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Hoque MSB, Koh YR, Braun JL, Mamun A, Liu Z, Huynh K, Liao ME, Hussain K, Cheng Z, Hoglund ER, Olson DH, Tomko JA, Aryana K, Galib R, Gaskins JT, Elahi MMM, Leseman ZC, Howe JM, Luo T, Graham S, Goorsky MS, Khan A, Hopkins PE. High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films. ACS Nano 2021; 15:9588-9599. [PMID: 33908771 DOI: 10.1021/acsnano.0c09915] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
High thermal conductivity materials show promise for thermal mitigation and heat removal in devices. However, shrinking the length scales of these materials often leads to significant reductions in thermal conductivities, thus invalidating their applicability to functional devices. In this work, we report on high in-plane thermal conductivities of 3.05, 3.75, and 6 μm thick aluminum nitride (AlN) films measured via steady-state thermoreflectance. At room temperature, the AlN films possess an in-plane thermal conductivity of ∼260 ± 40 W m-1 K-1, one of the highest reported to date for any thin film material of equivalent thickness. At low temperatures, the in-plane thermal conductivities of the AlN films surpass even those of diamond thin films. Phonon-phonon scattering drives the in-plane thermal transport of these AlN thin films, leading to an increase in thermal conductivity as temperature decreases. This is opposite of what is observed in traditional high thermal conductivity thin films, where boundaries and defects that arise from film growth cause a thermal conductivity reduction with decreasing temperature. This study provides insight into the interplay among boundary, defect, and phonon-phonon scattering that drives the high in-plane thermal conductivity of the AlN thin films and demonstrates that these AlN films are promising materials for heat spreaders in electronic devices.
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Affiliation(s)
- Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Abdullah Mamun
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Zeyu Liu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kenny Huynh
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Michael E Liao
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Kamal Hussain
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - David H Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John A Tomko
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Kiumars Aryana
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Roisul Galib
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Mirza Mohammad Mahbube Elahi
- Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131, United States
| | - Zayd C Leseman
- Department of Mechanical Engineering, and Interdisciplinary Research Center for Advanced Materials, King Fahd University of Petroleum & Minerals, Dhahran, Eastern Province 31261, Saudi Arabia
| | - James M Howe
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Mark S Goorsky
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Asif Khan
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
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Hoque MSB, Koh YR, Aryana K, Hoglund ER, Braun JL, Olson DH, Gaskins JT, Ahmad H, Elahi MMM, Hite JK, Leseman ZC, Doolittle WA, Hopkins PE. Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance. Rev Sci Instrum 2021; 92:064906. [PMID: 34243549 DOI: 10.1063/5.0049531] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Accepted: 06/06/2021] [Indexed: 06/13/2023]
Abstract
Measuring the thermal conductivity of sub-surface buried substrates is of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths. Here, we experimentally and numerically investigate the TPD of the recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD (i.e., the depth at which temperature drops to 1/e value of the maximum surface temperature) does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates that are traditionally challenging by transient pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries.
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Affiliation(s)
- Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Kiumars Aryana
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - David H Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Habib Ahmad
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | | | | | - Zayd C Leseman
- Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran, Eastern Province 31261, Saudi Arabia
| | - W Alan Doolittle
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
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Alaie S, Baboly MG, Jiang YB, Rempe S, Anjum DH, Chaieb S, Donovan BF, Giri A, Szwejkowski CJ, Gaskins JT, Elahi MMM, Goettler DF, Braun J, Hopkins PE, Leseman ZC. Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga + via Focused Ion Beam. ACS Appl Mater Interfaces 2018; 10:37679-37684. [PMID: 30280889 DOI: 10.1021/acsami.8b11949] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well understood nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.
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Affiliation(s)
- S Alaie
- Department of Radiology, Weill Cornell Medicine , Cornell University , New York , New York 10065 , United States
| | - M G Baboly
- Department of Engineering , University of Jamestown , Jamestown , North Dakota 58405 , United States
| | | | - S Rempe
- Sandia National Laboratories , Albuquerque , New Mexico 87123 , United States
| | | | - S Chaieb
- Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
- Materials and Structures Laboratory , Tokyo Institute of Technology , Yokohama 226-8503 , Japan
| | - B F Donovan
- Department of Physics , United States Naval Academy , Annapolis , Maryland 21402 , United States
| | | | | | | | | | | | | | | | - Z C Leseman
- Department of Mechanical and Nuclear Engineering , Kansas State University , Manhattan , Kansas 66506 , United States
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