1
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Howarth J, Vaklinova K, Grzeszczyk M, Baldi G, Hague L, Potemski M, Novoselov KS, Kozikov A, Koperski M. Electroluminescent vertical tunneling junctions based on WSe 2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields. Proc Natl Acad Sci U S A 2024; 121:e2401757121. [PMID: 38820004 PMCID: PMC11161753 DOI: 10.1073/pnas.2401757121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Accepted: 04/29/2024] [Indexed: 06/02/2024] Open
Abstract
We experimentally demonstrate the creation of defects in monolayer WSe2 via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe2 monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.
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Affiliation(s)
- James Howarth
- School of Physics and Astronomy, University of Manchester, ManchesterM13 9PL, United Kingdom
| | - Kristina Vaklinova
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
| | - Magdalena Grzeszczyk
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
| | - Giulio Baldi
- Department of Physics, National University of Singapore, Singapore119077, Singapore
| | - Lee Hague
- School of Physics and Astronomy, University of Manchester, ManchesterM13 9PL, United Kingdom
| | - Marek Potemski
- Laboratoire National des Champs Magnétiques Intenses, CNRS-Université Grenoble Alpes-Université Paul Sabatier-Institut National des Sciences Appliquées Toulouse, Grenoble38042, France
- Center for Terahertz Research and Applications Labs, Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw01-142, Poland
| | - Kostya S. Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore
| | - Aleksey Kozikov
- Faculty of Science, Agriculture & Engineering, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle Upon TyneNE1 7RU, United Kingdom
| | - Maciej Koperski
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore
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2
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Zeng L, Zhang S, Meng J, Chen J, Jiang J, Shi Y, Huang J, Yin Z, Wu J, Zhang X. Single-Photon Emission from Point Defects in Hexagonal Boron Nitride Induced by Plasma Treatment. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38687622 DOI: 10.1021/acsami.4c02601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Solid-state quantum emitters are gaining significant attention for many quantum information applications. Hexagonal boron nitride (h-BN) is an emerging host material for generating bright, stable, and tunable single-photon emission with narrow line widths at room temperature. In this work, we present a facile and efficient approach to generate high-density single-photon emitters (SPEs) in mechanically exfoliated h-BN through H- or Ar-plasma treatment followed by high-temperature annealing in air. It is notable that the postannealing is essential to suppress the fluorescence background in photoluminescence spectra and enhance emitter stability. These quantum emitters exhibit excellent optical properties, including high purity, brightness, stability, polarization degree, monochromaticity, and saturation intensity. The effects of process parameters on the quality of quantum emitters were systematic investigated. We find that there exists an optimal plasma power and h-BN thickness to achieve a high SPE density. This work offers a practical avenue for generating SPEs in h-BN and holds promise for future research and applications in quantum photonics.
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Affiliation(s)
- Libin Zeng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Siyu Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Junhua Meng
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, P. R. China
| | - Jingren Chen
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Ji Jiang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Yiming Shi
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, P. R. China
| | - Jidong Huang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Jinliang Wu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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3
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Wang J, He L, Zhang Y, Nong H, Li S, Wu Q, Tan J, Liu B. Locally Strained 2D Materials: Preparation, Properties, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314145. [PMID: 38339886 DOI: 10.1002/adma.202314145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 01/28/2024] [Indexed: 02/12/2024]
Abstract
2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.
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Affiliation(s)
- Jingwei Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liqiong He
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shengnan Li
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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4
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Kumar A, Samaner Ç, Cholsuk C, Matthes T, Paçal S, Oyun Y, Zand A, Chapman RJ, Saerens G, Grange R, Suwanna S, Ateş S, Vogl T. Polarization Dynamics of Solid-State Quantum Emitters. ACS NANO 2024. [PMID: 38335970 PMCID: PMC10883057 DOI: 10.1021/acsnano.3c08940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Quantum emitters in solid-state crystals have recently attracted a great deal of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key parameters that plays a crucial role in various applications, such as quantum computation, which uses the indistinguishability of photons. However, the degree of single-photon polarization is typically quantified using the time-averaged photoluminescence intensity of single emitters, which provides limited information about the dipole properties in solids. In this work, we use single defects in hexagonal boron nitride and nanodiamond as efficient room-temperature single-photon sources to reveal the origin and temporal evolution of the dipole orientation in solid-state quantum emitters. The angles of the excitation and emission dipoles relative to the crystal axes were determined experimentally and then calculated using density functional theory, which resulted in characteristic angles for every specific defect that can be used as an efficient tool for defect identification and understanding their atomic structure. Moreover, the temporal polarization dynamics revealed a strongly modified linear polarization visibility that depends on the excited-state decay time of the individual excitation. This effect can potentially be traced back to the excitation of excess charges in the local crystal environment. Understanding such hidden time-dependent mechanisms can further improve the performance of polarization-sensitive experiments, particularly that for quantum communication with single-photon emitters.
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Affiliation(s)
- Anand Kumar
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Çağlar Samaner
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Chanaprom Cholsuk
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Tjorben Matthes
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Serkan Paçal
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Yağız Oyun
- Department of Photonics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Ashkan Zand
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Robert J Chapman
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Grégoire Saerens
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Rachel Grange
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Sujin Suwanna
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, 10400 Bangkok, Thailand
| | - Serkan Ateş
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Tobias Vogl
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
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5
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Tatarczak P, Iwański J, Dąbrowska AK, Tokarczyk M, Binder J, Stępniewski R, Wysmołek A. Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials. NANOTECHNOLOGY 2024; 35:175703. [PMID: 38150722 DOI: 10.1088/1361-6528/ad18e6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Accepted: 12/27/2023] [Indexed: 12/29/2023]
Abstract
Strain built-in electronic and optoelectronic devices can influence their properties and lifetime. This effect is particularly significant at the interface between two-dimensional materials and substrates. One such material is epitaxial hexagonal boron nitride (h-BN), which is grown at temperatures often exceeding 1000 °C. Due to the high growth temperature, h-BN based devices operating at room temperature can be strongly affected by strain generated during cooling due to the differences in lattice thermal expansion of h-BN and the substrate. Here, we present results of temperature-dependent Raman studies of the in-plane E2ghighphonon mode in the temperature range of 300-1100 K measured for h-BN grown by metalorganic vapor phase epitaxy. We observe a change, by an order of magnitude, in the rate of the temperature-induced frequency shift for temperatures below 900 K, indicating a strong reduction of the effective h-BN/substrate interaction. We attribute this behavior to the creation of h-BN wrinkles which results in strain relaxation. This interpretation is supported by the observation that no change of layer/substrate interaction and no wrinkles are observed for delaminated h-BN films transferred onto silicon. Our findings demonstrate that wrinkle formation is an inherent process for two-dimensional materials on foreign substrates that has to be understood to allow for the successful engineering of devices based on epitaxially grown van der Waals heterostructures.
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Affiliation(s)
- Piotr Tatarczak
- Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Jakub Iwański
- Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | | | - Mateusz Tokarczyk
- Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Johannes Binder
- Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Roman Stępniewski
- Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Andrzej Wysmołek
- Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
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6
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Smit R, Tebyani A, Hameury J, van der Molen SJ, Orrit M. Sharp zero-phonon lines of single organic molecules on a hexagonal boron-nitride surface. Nat Commun 2023; 14:7960. [PMID: 38042826 PMCID: PMC10693553 DOI: 10.1038/s41467-023-42865-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 10/20/2023] [Indexed: 12/04/2023] Open
Abstract
Single fluorescent molecules embedded in the bulk of host crystals have proven to be sensitive probes of the dynamics in their nano environment, thanks to their narrow (about 30-50 MHz or 0.1-0.2 μeV) optical linewidth of the 0-0 zero-phonon line (0-0 ZPL) at cryogenic temperatures. However, the optical linewidths of the 0-0 ZPL have been found to increase dramatically as the single molecules are located closer to a surface or interface, while no 0-0 ZPL has been detected for single molecules on any surface. Here we study single terrylene molecules adsorbed on the surface of hexagonal boron-nitride (hBN) substrates. Our low-temperature results show that it is possible to observe the 0-0 ZPL of fluorescent molecules on a surface. We compare our results for molecules deposited on the surfaces of annealed and non-annealed hBN flakes and we see a marked improvement in the spectral stability of the emitters after annealing.
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Affiliation(s)
- Robert Smit
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands
| | - Arash Tebyani
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands
| | - Jil Hameury
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands
| | | | - Michel Orrit
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands.
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7
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Scheuer KG, Kirwin PS, Hornig GJ, DeCorby RG. Enhanced emission from hBN in sputtered microcavities. APPLIED OPTICS 2023; 62:4866-4870. [PMID: 37707262 DOI: 10.1364/ao.491968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 05/23/2023] [Indexed: 09/15/2023]
Abstract
In this observational study, we embed few-layer hexagonal boron nitride (hBN) inside a planar Fabry-Perot cavity fabricated using a pulsed DC magnetron sputtering system and show that the hBN retains its inherent visible range, defect-based luminescent properties following relatively energetic deposition processing. The observed surface-normal emission enhancement factor of ∼40 is in good agreement with theoretical predictions. We also found that embedded hBN subjected to a rapid thermal annealing treatment exhibits a cracking effect where the edges of the material glow distinctly brighter than adjacent regions. Our results might inform future efforts involving monolithic integration of hBN active layers.
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8
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Curie D, Krogel JT, Cavar L, Solanki A, Upadhyaya P, Li T, Pai YY, Chilcote M, Iyer V, Puretzky A, Ivanov I, Du MH, Reboredo F, Lawrie B. Correlative Nanoscale Imaging of Strained hBN Spin Defects. ACS APPLIED MATERIALS & INTERFACES 2022; 14:41361-41368. [PMID: 36048915 DOI: 10.1021/acsami.2c11886] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.
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Affiliation(s)
- David Curie
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Jaron T Krogel
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Lukas Cavar
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
| | - Abhishek Solanki
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Tongcang Li
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yun-Yi Pai
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
| | - Michael Chilcote
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
| | - Vasudevan Iyer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alexander Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ilia Ivanov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Mao-Hua Du
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Fernando Reboredo
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Benjamin Lawrie
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
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9
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Shtansky DV, Matveev AT, Permyakova ES, Leybo DV, Konopatsky AS, Sorokin PB. Recent Progress in Fabrication and Application of BN Nanostructures and BN-Based Nanohybrids. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12162810. [PMID: 36014675 PMCID: PMC9416166 DOI: 10.3390/nano12162810] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 08/11/2022] [Accepted: 08/12/2022] [Indexed: 05/27/2023]
Abstract
Due to its unique physical, chemical, and mechanical properties, such as a low specific density, large specific surface area, excellent thermal stability, oxidation resistance, low friction, good dispersion stability, enhanced adsorbing capacity, large interlayer shear force, and wide bandgap, hexagonal boron nitride (h-BN) nanostructures are of great interest in many fields. These include, but are not limited to, (i) heterogeneous catalysts, (ii) promising nanocarriers for targeted drug delivery to tumor cells and nanoparticles containing therapeutic agents to fight bacterial and fungal infections, (iii) reinforcing phases in metal, ceramics, and polymer matrix composites, (iv) additives to liquid lubricants, (v) substrates for surface enhanced Raman spectroscopy, (vi) agents for boron neutron capture therapy, (vii) water purifiers, (viii) gas and biological sensors, and (ix) quantum dots, single photon emitters, and heterostructures for electronic, plasmonic, optical, optoelectronic, semiconductor, and magnetic devices. All of these areas are developing rapidly. Thus, the goal of this review is to analyze the critical mass of knowledge and the current state-of-the-art in the field of BN-based nanomaterial fabrication and application based on their amazing properties.
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10
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Glushkov E, Macha M, Räth E, Navikas V, Ronceray N, Cheon CY, Ahmed A, Avsar A, Watanabe K, Taniguchi T, Shorubalko I, Kis A, Fantner G, Radenovic A. Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water. ACS NANO 2022; 16:3695-3703. [PMID: 35254820 PMCID: PMC8945698 DOI: 10.1021/acsnano.1c07086] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically active defects in hBN using FIB and find that beam-substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy, which reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that, upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to nanoscale sensing, and to nanofluidics.
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Affiliation(s)
- Evgenii Glushkov
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- E-mail:
| | - Michal Macha
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Esther Räth
- Laboratory
of Nano-Bio Instrumentation, Institute of
Bioengineering, EPFL, CH-1015 Lausanne, Switzerland
| | - Vytautas Navikas
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Nathan Ronceray
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Cheol Yeon Cheon
- Laboratory
of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science,
EPFL, CH-1015 Lausanne, Switzerland
| | - Aqeel Ahmed
- Laboratory
of Quantum Nano-Optics, Institute of Physics,
EPFL, CH-1015 Lausanne, Switzerland
| | - Ahmet Avsar
- Laboratory
of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science,
EPFL, CH-1015 Lausanne, Switzerland
- School of
Mathematics, Statistics and Physics, Newcastle
University, Newcastle upon Tyne, NE1 7RU, United Kingdom
| | - Kenji Watanabe
- National
Institute for Materials Science, 305-0044 Tsukuba, Japan
| | | | - Ivan Shorubalko
- Laboratory
for Transport at Nanoscale Interfaces, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Andras Kis
- Laboratory
of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science,
EPFL, CH-1015 Lausanne, Switzerland
| | - Georg Fantner
- Laboratory
of Nano-Bio Instrumentation, Institute of
Bioengineering, EPFL, CH-1015 Lausanne, Switzerland
| | - Aleksandra Radenovic
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- E-mail:
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11
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Fröch JE, Li C, Chen Y, Toth M, Kianinia M, Kim S, Aharonovich I. Purcell Enhancement of a Cavity-Coupled Emitter in Hexagonal Boron Nitride. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104805. [PMID: 34837313 DOI: 10.1002/smll.202104805] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Revised: 10/03/2021] [Indexed: 06/13/2023]
Abstract
Integration of solid-state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic-based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride (hBN) have emerged as a viable candidate over the last years. While the fundamental physical properties have been intensively studied, only a few works have focused on the emitter integration into photonic resonators. Yet, for a potential quantum photonic material platform, the integration with nanophotonic cavities is an important cornerstone, as it enables the deliberate tuning of the spontaneous emission and the improved readout of distinct transitions for a quantum emitter. In this work, the resonant tuning of a monolithic cavity integrated hBN quantum emitter is demonstrated through gas condensation at cryogenic temperature. In resonance, an emission enhancement and lifetime reduction are observed, with an estimate for the Purcell factor of ≈15.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Chi Li
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Yongliang Chen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Victoria, 3010, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
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Juma IG, Kim G, Jariwala D, Behura SK. Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene. iScience 2021; 24:103374. [PMID: 34816107 PMCID: PMC8593561 DOI: 10.1016/j.isci.2021.103374] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material. Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene. Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed. Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene. These complex 2D heterostructures exhibit various physical phenomena and could potentially have a range of practical applications.
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Affiliation(s)
- Isaac G. Juma
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
- Department of Mathematics and Computer Science, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
| | - Gwangwoo Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Sanjay K. Behura
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
- Department of Mathematics and Computer Science, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
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Chen Y, Li C, White S, Nonahal M, Xu ZQ, Watanabe K, Taniguchi T, Toth M, Tran TT, Aharonovich I. Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47283-47292. [PMID: 34549932 DOI: 10.1021/acsami.1c14863] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Single-photon emitters in hexagonal boron nitride (hBN) are promising constituents for integrated quantum photonics. Specifically, engineering these emitters in large-area, high-quality, exfoliated hBN is needed for their incorporation into photonic devices and two dimensional heterostructures. Here, we report on two different routes to generate high-density quantum emitters with excellent optical properties-including high brightness and photostability. We study in detail high-temperature annealing and plasma treatments as an efficient means to generate dense emitters. We show that both an optimal oxygen flow rate and annealing temperature are required for the formation of high-density quantum emitters. In parallel, we demonstrate that the plasma treatment in various environments, followed by standard annealing is also an effective route for emission engineering. Our work provides vital information for the fabrication of quantum emitters in high-quality, exfoliated hBN flakes and paves the way toward the integration of the quantum emitters with photonic devices.
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Affiliation(s)
- Yongliang Chen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Chi Li
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Simon White
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milad Nonahal
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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14
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Bhang J, Ma H, Yim D, Galli G, Seo H. First-Principles Predictions of Out-of-Plane Group IV and V Dimers as High-Symmetry, High-Spin Defects in Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45768-45777. [PMID: 34541839 DOI: 10.1021/acsami.1c16988] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computation, communication, and sensing. However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane XNYi dimer defects (X, Y = C, N, P, and Si) form a new class of stable C3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3A2 ground state and 3E excited state, both of which are isolated from the h-BN bulk states. We show that 1E and 1A shelving states exist and they are positioned between the 3E and 3A2 states for all the dimer defects considered in this study. To support future experimental identification of the XNYi dimer defects, we provide extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet XNYi defects lies in the visible range (800 nm to 500 nm). We compute the zero-field splitting of the dimers' spin to range from 1.79 GHz (SiNPi0) to 29.5 GHz (CNNi0). Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.
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Affiliation(s)
- Jooyong Bhang
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - He Ma
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
| | - Donggyu Yim
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Hosung Seo
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
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15
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Ben J, Liu X, Wang C, Zhang Y, Shi Z, Jia Y, Zhang S, Zhang H, Yu W, Li D, Sun X. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006761. [PMID: 34050555 DOI: 10.1002/adma.202006761] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Revised: 12/31/2020] [Indexed: 06/12/2023]
Abstract
2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.
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Affiliation(s)
- Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Cong Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yupeng Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Wenjie Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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Li C, Mendelson N, Ritika R, Chen Y, Xu ZQ, Toth M, Aharonovich I. Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride. NANO LETTERS 2021; 21:3626-3632. [PMID: 33870699 DOI: 10.1021/acs.nanolett.1c00685] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
We demonstrate the fabrication of large-scale arrays of single-photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar sites. Statistical analysis shows that the pillar diameter is critical for isolating single defects, and diameters of ∼250 nm produce a near-unity yield of a single emitter at each pillar site. Our results constitute a promising route toward spatially controlled generation of hBN SPEs and provide an effective and efficient method to create large-scale SPE arrays. The results pave the way to scalability and high throughput fabrication of SPEs for advanced quantum photonic applications.
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Affiliation(s)
- Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Ritika Ritika
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - YongLiang Chen
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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