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Wei D, Li Y, Guo G, Yu H, Ma Y, Tang Y, Feng Z, Dai X. Tunable electronic and optical properties of ferroelectric WS 2/Ga 2O 3heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:475501. [PMID: 37567212 DOI: 10.1088/1361-648x/acef89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2023] [Accepted: 08/11/2023] [Indexed: 08/13/2023]
Abstract
To integrate two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong intrinsic ferroelectricity is promising for applications in the design of new electronic devices. The polarization reversal transitions of 2D ferroelectric Ga2O3layers provide a new approach to explore the electronic structure and optical properties of modulated WS2/Ga2O3vdWHs. The WS2/Ga2O3↑ and WS2/Ga2O3↓ vdWHs are designed to explore possible characteristics through the electric field and biaxial strain. The biaxial strain can effectively modulate the mutual transition of two mode vdWHs in type II and type I band alignment. The strain engineering enhances the optical absorption properties of vdWHs, encompassing excellent optical absorption properties in the range from infrared to visible to ultraviolet, ensuring promising applications in flexible electronics and optical devices. Based on the highly modifiable physical properties of the WS2/Ga2O3vdWHs, we have further explored the potential applications for the field-controlled switching of the channel in MOSFET devices.
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Affiliation(s)
- Dong Wei
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Yi Li
- School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044, People's Republic of China
| | - Gaofu Guo
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Heng Yu
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Yaqiang Ma
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Yanan Tang
- School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044, People's Republic of China
| | - Zhen Feng
- School of Materials Science and Engineering, Henan Institute of Technology, Xinxiang, Henan 453000, People's Republic of China
| | - Xianqi Dai
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
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2
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Niu Y, Zhou X, Gao W, Fu M, Duan Y, Yao J, Wang B, Yang M, Zheng Z, Li J. Interfacial Engineering of In 2Se 3/h-BN/CsPb(Br/I) 3 Heterostructure Photodetector and Its Application in Automatic Obstacle Avoidance System. ACS NANO 2023; 17:13760-13768. [PMID: 37428004 DOI: 10.1021/acsnano.3c03319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.
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Affiliation(s)
- Yingying Niu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Xin Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Maixia Fu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Yule Duan
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, PR China
| | - Bing Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, PR China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, PR China
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3
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Li L, Feng H, Dong Z, Yang T, Xue S. Indium selenide/silver phosphate hollow microsphere S-scheme heterojunctions for photocatalytic hydrogen production with simultaneous degradation of tetracycline. J Colloid Interface Sci 2023; 649:10-21. [PMID: 37331106 DOI: 10.1016/j.jcis.2023.06.067] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 05/31/2023] [Accepted: 06/11/2023] [Indexed: 06/20/2023]
Abstract
Designing heterojunction photocatalysts with strong interfacial interactions is an effective way to reduce the recombination of photogenerated charge carriers. Here, silver phosphate (Ag3PO4) nanoparticles are coupled with hollow flower-like indium selenide (In2Se3) microspheres by a facile Ostwald ripening and in-situ growth method, resulting in the construction of In2Se3/Ag3PO4 hollow microsphere step-scheme (S-scheme) heterojunction with a large contact interface. The flower-like In2Se3 with hollow and porous structure provides a large specific surface area and numerous active sites for photocatalytic reactions to take place. The photocatalytic activity was tested by measuring the hydrogen evolution from antibiotic wastewater, and the H2 evolution rate of In2Se3/Ag3PO4 reached 4206.4 µmol g-1h-1 under visible light, which is approximately 2.8 times greater than that of In2Se3. In addition, the amount of tetracycline (TC) degradation when it was used as a sacrificial agent is about 54.4% after 1 h. On the one hand, Se-P chemical bonds act as electron transfer channels in the S-scheme heterojunctions, which can facilitate the migration and separation of photogenerated charge carriers. On the other hand, the S-scheme heterojunctions can retain the useful holes and electrons with higher redox capacities, which is very favorable for the generation of more •OH radicals and the photocatalytic activity is greatly enhanced. This work provides an alternative design approach for photocatalysts toward hydrogen evolution in antibiotic wastewater.
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Affiliation(s)
- Lingwei Li
- College of Science, Donghua University, Shanghai 201620, China
| | - Hange Feng
- College of Science, Donghua University, Shanghai 201620, China; College of Information Science and Technology, Donghua University, Shanghai 201620, China
| | - Zibo Dong
- College of Science, Donghua University, Shanghai 201620, China
| | - Tiantian Yang
- College of Science, Donghua University, Shanghai 201620, China
| | - Shaolin Xue
- College of Science, Donghua University, Shanghai 201620, China.
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4
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Huang Z, Zhou Y, Luo Z, Yang Y, Yang M, Gao W, Yao J, Zhao Y, Yang Y, Zheng Z, Li J. Integration of photovoltaic and photogating effects in a WSe 2/WS 2/p-Si dual junction photodetector featuring high-sensitivity and fast-response. NANOSCALE ADVANCES 2023; 5:675-684. [PMID: 36756495 PMCID: PMC9891068 DOI: 10.1039/d2na00552b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Accepted: 11/26/2022] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) material-based van der Waals (vdW) heterostructures with exotic semiconducting properties have shown tremendous potential in next-generation photovoltaic photodetectors. Nevertheless, these vdW heterostructure devices inevitably suffer from a compromise between high sensitivity and fast response. Herein, an ingenious photovoltaic photodetector based on a WSe2/WS2/p-Si dual-vdW heterojunction is demonstrated. First-principles calculations and energy band profiles consolidate that the photogating effect originating from the bottom vdW heterojunction not only strengthens the photovoltaic effect of the top vdW heterojunction, but also suppresses the recombination of photogenerated carriers. As a consequence, the separation of photogenerated carriers is facilitated and their lifetimes are extended, resulting in higher photoconductive gain. Coupled with these synergistic effects, this WSe2/WS2/p-Si device exhibits both high sensitivity (responsivity of 340 mA W-1, a light on/off ratio greater than 2500, and a detectivity of 3.34 × 1011 Jones) and fast response time (rise/decay time of 657/671 μs) under 405 nm light illumination in self-powered mode. Finally, high-resolution visible-light and near-infrared imaging capabilities are demonstrated by adopting this dual-heterojunction device as a single pixel, indicating its great application prospects in future optoelectronic systems.
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Affiliation(s)
- Zihao Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuchen Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
- Honor Device Co.,Ltd Shenzhen 518000 Guangdong P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yibing Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Mengmeng Yang
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuhua Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631 P. R. China
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5
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Han W, Zheng X, Yang K, Tsang CS, Zheng F, Wong LW, Lai KH, Yang T, Wei Q, Li M, Io WF, Guo F, Cai Y, Wang N, Hao J, Lau SP, Lee CS, Ly TH, Yang M, Zhao J. Phase-controllable large-area two-dimensional In 2Se 3 and ferroelectric heterophase junction. NATURE NANOTECHNOLOGY 2023; 18:55-63. [PMID: 36509923 DOI: 10.1038/s41565-022-01257-3] [Citation(s) in RCA: 34] [Impact Index Per Article: 34.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2022] [Accepted: 10/06/2022] [Indexed: 06/17/2023]
Abstract
Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In2Se3 is the most promising, as all the paraelectric (β), ferroelectric (α) and antiferroelectric (β') phases are found in 2D quintuple layers. However, the large-scale synthesis of 2D In2Se3 films with the desired phase is still absent, and the stability for each phase remains obscure. Here we show the successful growth of centimetre-scale 2D β-In2Se3 film by chemical vapour deposition including distinct centimetre-scale 2D β'-In2Se3 film by an InSe precursor. We also demonstrate that as-grown 2D β'-In2Se3 films on mica substrates can be delaminated or transferred onto flexible or uneven substrates, yielding α-In2Se3 films through a complete phase transition. Thus, a full spectrum of paraelectric, ferroelectric and antiferroelectric 2D films can be readily obtained by means of the correlated polymorphism in 2D In2Se3, enabling 2D memory transistors with high electron mobility, and polarizable β'-α In2Se3 heterophase junctions with improved non-volatile memory performance.
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Affiliation(s)
- Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
- Hubei Yangtze Memory Laboratories, Hubei University, Wuhan, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- Department of Computing, The Hong Kong Polytechnic University, Kowloon, China
| | - Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Fangyuan Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ka Hei Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Tiefeng Yang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China
| | - Qi Wei
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Weng Fu Io
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Feng Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Yuan Cai
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Ning Wang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China.
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China.
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
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6
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Abstract
Layered van der Waals (vdW) materials have attracted significant attention due to their materials properties that can enhance diverse applications including next-generation computing, biomedical devices, and energy conversion and storage technologies. This class of materials is typically studied in the two-dimensional (2D) limit by growing them directly on bulk substrates or exfoliating them from parent layered crystals to obtain single or few layers that preserve the original bonding. However, these vdW materials can also function as a platform for obtaining additional phases of matter at the nanoscale. Here, we introduce and review a synthesis paradigm, morphotaxy, where low-dimensional materials are realized by using the shape of an initial nanoscale precursor to template growth or chemical conversion. Using morphotaxy, diverse non-vdW materials such as HfO2 or InF3 can be synthesized in ultrathin form by changing the composition but preserving the shape of the original 2D layered material. Morphotaxy can also enable diverse atomically precise heterojunctions and other exotic structures such as Janus materials. Using this morphotaxial approach, the family of low-dimensional materials can be substantially expanded, thus creating vast possibilities for future fundamental studies and applied technologies.
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Affiliation(s)
- David Lam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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7
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Li J, Li H, Niu X, Wang Z. Low-Dimensional In 2Se 3 Compounds: From Material Preparations to Device Applications. ACS NANO 2021; 15:18683-18707. [PMID: 34870407 DOI: 10.1021/acsnano.1c03836] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.
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Affiliation(s)
- Junye Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Handong Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor. Sci Bull (Beijing) 2021; 66:2288-2296. [PMID: 36654457 DOI: 10.1016/j.scib.2021.06.020] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2021] [Revised: 05/22/2021] [Accepted: 06/15/2021] [Indexed: 01/20/2023]
Abstract
Exploring materials with multiple properties who can endow a simple device with integrated functionalities has attracted enormous attention in the microelectronic field. One reason is the imperious demand for processors with continuously higher performance and totally new architecture. Combining ferroelectric with semiconducting properties is a promising solution. Here, we show that logic, in-memory computing, and optoelectrical logic and non-volatile computing functionalities can be integrated into a single transistor with ferroelectric semiconducting α-In2Se3 as the channel. Two-input AND, OR, and non-volatile NOR and NAND logic operations with current on/off ratios reaching up to five orders, good endurance (1000 operation cycles), and fast operating speed (10 μs) are realized. In addition, optoelectrical OR logic and non-volatile implication (IMP) operations, as well as ternary-input optoelectrical logic and in-memory computing functions are achieved by introducing light as an additional input signal. Our work highlights the potential of integrating complex logic functions and new-type computing into a simple device based on emerging ferroelectric semiconductors.
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Chang B, Cheng HW, Lin YC, Wang HC, Chen CH, Nguyen VT, Yang Y, Wei KH. Incorporating Indium Selenide Nanosheets into a Polymer/Small Molecule Binary Blend Active Layer Enhances the Long-Term Stability and Performance of Its Organic Photovoltaics. ACS APPLIED MATERIALS & INTERFACES 2020; 12:55023-55032. [PMID: 33238703 DOI: 10.1021/acsami.0c14461] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this report, we demonstrated that the incorporation of 15 wt % two-dimensional transition-metal dichalcogenide materials indium selenide (In2Se3) nanosheets into a polymer (PM6)/small molecule (Y6) active layer not only increased its light absorption but also enhanced the long-term stability of the PM6/Y6/In2Se3 ternary blend organic photovoltaic (OPV) devices. The power conversion efficiency (PCE) of the device was improved from 15.7 to 16.5% for the corresponding PM6/Y6 binary blend device. Moreover, the PM6/Y6/In2Se3 device retained 80% of its initial PCE after thermal treatment at 100 °C for 600 h; in comparison, the binary blend device retained only 62% of its initial value. This relative enhancement of 29% resulted from the In2Se3 nanosheets retarding or facilitating molecule packing in different orientations that stabilizes the morphology of the active layer. We adopted a modified kinetics model to account for the intrinsic degradation of the OPV; the degradation-facilitated energy for the degradation kinetics of the PCE for the ternary blend device was 5.3 kJ/mol, half of that (11.3 kJ/mol) of the binary blend device, indicating a slower degradation rate occurring for the case of incorporating In2Se3 nanosheets. Therefore, the incorporation of transition metal dichalcogenide nanosheets having tunable band gaps and large asymmetric shape appears to be a new way to improve the long-term stability of devices and realize the practical use of OPVs.
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Affiliation(s)
- Bin Chang
- Department of Materials Science and Engineering, National Chiao Tung University 30010 Hsinchu, Taiwan
| | - Hao-Wen Cheng
- Department of Materials Science and Engineering, National Chiao Tung University 30010 Hsinchu, Taiwan
| | - Yu-Che Lin
- Department of Materials Science and Engineering, National Chiao Tung University 30010 Hsinchu, Taiwan
| | - Hao-Cheng Wang
- Department of Materials Science and Engineering, National Chiao Tung University 30010 Hsinchu, Taiwan
| | - Chung-Hao Chen
- Department of Materials Science and Engineering, National Chiao Tung University 30010 Hsinchu, Taiwan
| | - Van-Truong Nguyen
- Department of Materials Science and Engineering, National Chiao Tung University 30010 Hsinchu, Taiwan
| | - Yang Yang
- Department of Material Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Kung-Hwa Wei
- Department of Materials Science and Engineering, National Chiao Tung University 30010 Hsinchu, Taiwan
- Center for Emergent Functional Matter Science, National Chiao Tung University, Hsinchu 30010, Taiwan
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10
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Anandan M, Hsieh HF, Liu FC, Chen CY, Lee KY, Chao LC, Ho CH, Chen RS. High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In 2Se 3 nanosheet photodetectors. NANOTECHNOLOGY 2020; 31:465201. [PMID: 32845871 DOI: 10.1088/1361-6528/abac7e] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photoconductivities (PCs) with high responsivity in two-dimensional (2D) diindium triselenide (In2Se3) nanostructures with α-phase hexagonal structure were studied. The In2Se3 nanosheet photodetectors fabricated by focused-ion beam technique exhibit broad spectral response with wavelength range from 300 nm to 1000 nm. The In2Se3 nanosheets achieve optimal responsivity of 720 A W-1 in near-infrared region (808 nm), and detectivity of 2.2 × 1012 Jones, which were higher than several 2D material photodetectors. The physical origins that result in high photoresponse in In2Se3 nanosheets such as carrier lifetime and mobility were also characterized by time-resolved PC and field-effect transistor measurements. The fast (hundred microseconds to milliseconds) and slow (seconds and longer) current rise or decay processes were both observed during the photoresponse. The narrowing (or relaxation) of depletion region and oxygen-sensitized photoconduction mechanism were suggested to be the causes of the efficient photoresponse in the In2Se3 nanostructure detectors. All these observations suggest that α-In2Se3 nanosheets could be a promising candidate for photosensitive material applications.
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Affiliation(s)
- Manickam Anandan
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
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11
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Paul Inbaraj CR, Mathew RJ, Ulaganathan RK, Sankar R, Kataria M, Lin HY, Cheng HY, Lin KH, Lin HI, Liao YM, Chou FC, Chen YT, Lee CH, Chen YF. Modulating Charge Separation with Hexagonal Boron Nitride Mediation in Vertical Van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26213-26221. [PMID: 32400164 DOI: 10.1021/acsami.0c06077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump-probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W-1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.
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Affiliation(s)
- Christy Roshini Paul Inbaraj
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Roshan Jesus Mathew
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | | | - Raman Sankar
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Monika Kataria
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Central University, Chung-Li 320, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Hsia Yu Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Yu Cheng
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Kung-Hsuan Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Hung-I Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Ming Liao
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Fang Cheng Chou
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Yit-Tsong Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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12
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Kou Y, Chen L, Mu J, Miao H, Wang Y, Hu X, Teng F. Catalyst-free growth of dense γ-In 2Se 3 nanosheet arrays and their application in photoelectric detectors. NANOTECHNOLOGY 2020; 31:195601. [PMID: 31899909 DOI: 10.1088/1361-6528/ab674a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this work, a dense γ-In2Se3 nanosheet array has been fabricated using the chemical vapor deposition method under atmospheric pressure. Compared with crystal silicon, the photodetector based on the γ-In2Se3/p-Si heterojunction exhibits a high responsivity (96.7 mA W-1) at the near-infrared region, a presentable current on/off ratio (∼1000) and excellent detectivity (2.03 × 1012 jones). Simultaneously, the obtained photodetector demonstrated a fast response speed (0.15 ms/0.5 ms) and a broadband sensitive wavelength from ultraviolet (340 nm) to near-infrared (1020 nm). The photoelectric experimental data of the device shows that its high performance is attributed to the high-light absorption capacity of the material, the rational energy band structures of γ-In2Se3 and p-Si, and the effective separation of photo-generated carriers caused by the formed type-II heterojunction. Our work provides the primary experimental basis for the photodetection application of the γ-In2Se3 nanostructure.
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Affiliation(s)
- Yumeng Kou
- School of Physics, Northwest University, Xi'an 710069, People's Republic of China
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13
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Lu J, Zheng Z, Yao J, Gao W, Xiao Y, Zhang M, Li J. An asymmetric contact-induced self-powered 2D In 2S 3 photodetector towards high-sensitivity and fast-response. NANOSCALE 2020; 12:7196-7205. [PMID: 32195529 DOI: 10.1039/d0nr00517g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieved a self-powered operation by adopting a geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with an asymmetric contact is combined with the traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA W-1), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.
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Affiliation(s)
- Jianting Lu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China.
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14
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Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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15
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Lu J, Zheng Z, Yao J, Gao W, Zhao Y, Xiao Y, Li J. 2D In 2 S 3 Nanoflake Coupled with Graphene toward High-Sensitivity and Fast-Response Bulk-Silicon Schottky Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1904912. [PMID: 31608603 DOI: 10.1002/smll.201904912] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2019] [Indexed: 06/10/2023]
Abstract
Silicon-based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light-matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In2 S3 with Gr/Si PDs is demonstrated. The introduction of the double-heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In2 S3 /graphene/Si devices present an ultrahigh photoresponsivity of 4.53 × 104 A W-1 and fast response speed less than 40 µs, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In2 S3 /graphene/Si PD expresses outstanding long-term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high-sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.
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Affiliation(s)
- Jianting Lu
- School of Materials and Energy, Guangdong University of Technology, Guangdong, Guangzhou, 510006, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangdong, Guangzhou, 510006, P. R. China
- Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, Kowloon, 999077, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-Sen University, Guangdong, Guangzhou, 510275, P. R. China
| | - Wei Gao
- School of Materials and Energy, Guangdong University of Technology, Guangdong, Guangzhou, 510006, P. R. China
| | - Yu Zhao
- School of Materials and Energy, Guangdong University of Technology, Guangdong, Guangzhou, 510006, P. R. China
| | - Ye Xiao
- School of Materials and Energy, Guangdong University of Technology, Guangdong, Guangzhou, 510006, P. R. China
| | - Jingbo Li
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Institute of Semiconductors, South China Normal University, Guangdong, Guangzhou, 510631, P. R. China
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16
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Mo H, Zhang X, Liu Y, Kang P, Nan H, Gu X, Ostrikov KK, Xiao S. Two-Dimensional Alloying Molybdenum Tin Disulfide Monolayers with Fast Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2019; 11:39077-39087. [PMID: 31573789 DOI: 10.1021/acsami.9b13645] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Elemental alloying in monolayer, two-dimensional (2D) transition metal dichalcogenides (TMDs) promises unprecedented ability to modulate their electronic structure leading to unique optoelectronic properties. MoS2 monolayer based photodetectors typically exhibit a high photoresponsivity but suffer from a low response time. Here we develop a new approach for Sn alloying in MoS2 monolayers based on the synergy of the customized chemical vapor deposition (CVD) and the effects of common salt (NaCl) to produce high-quality and large-size Mo1-xSnxS2 (x < 0.5) alloy monolayers. The composition difference results in different growth behaviors; Mo dominated alloys (x < 0.5) exhibit uniform and large size (up to 100 μm) triangular monolayers, while Sn-dominated alloys (x > 0.5) present multilayer grains. The Mo1-xSnxS2 (x < 0.5) based photodetectors and phototransistors exhibit a maximum responsitivity of 12 mA/W and a minimum response time of 20 ms, which is faster than most reported MoS2-based photodetectors. This work offers new perspectives for precision 2D alloy engineering to improve the optoelectronic performance of TMD-based photodetectors.
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Affiliation(s)
| | | | - Yuan Liu
- Wuxi Branch of Jiangsu Province Special Equipment Safety Supervision and Inspection Institute , Wuxi 214174 , China
| | | | | | | | - Kostya Ken Ostrikov
- School of Chemistry, Physics and Mechanical Engineering and Institute for Future Environments , Queensland University of Technology , Brisbane , QLD 4000 , Australia
- CSIRO-QUT Joint Sustainable Processes and Devices Laboratory , P. O. Box 218, Lindfield , NSW 2070 , Australia
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17
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Gao W, Zheng Z, Li Y, Zhao Y, Xu L, Deng H, Li J. High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism. NANOSCALE 2019; 11:13309-13317. [PMID: 31270522 DOI: 10.1039/c9nr01966a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
In recent years, with the rapid development of transfer technologies related to graphene and other two-dimensional layered materials (2DLMs), graphene sandwiched 2DLMs have been confirmed to be outstanding tunneling and optoelectronic devices. Here, compared to the planar SnSe2-Au device, the SnSe2 device with different thicknesses (12-256 nm) is incorporated into graphene sandwiched structures for photodetection. The results indicate that the photoresponse properties are dependent on the thickness and gate voltage. In particular, under 532 nm illumination and at a Vg of +80 V, the SnSe2 device with a thickness of 96.5 nm shows an impressively high responsivity of 1.3 × 103 A W-1, an external quantum efficiency of 3 × 105%, and a detectivity of 1.2 × 1012 Jones. Besides, a high response speed (a rise time of 30.2 ms and a decay time of 27.2 ms) and flat photoswitching behavior are achieved without the gate voltage. In addition, the intrinsic mechanisms are further discussed through the relative spatial potential difference and the band alignment diagrams of the graphene-SnSe2-graphene and Au-SnSe2-Au structures. These findings indicate that SnSe2 has great potential for practical applications in next generation high performance optoelectronics.
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Affiliation(s)
- Wei Gao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Yongtao Li
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Yu Zhao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Liang Xu
- Zhejiang Bright Semiconductor Technology Co. Ltd., Jinhua, Zhejiang 321000, P. R. China
| | - Huixiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
| | - Jingbo Li
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China. and State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
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18
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Du L, Wang C, Fang J, Wei B, Xiong W, Wang X, Ma L, Wang X, Wei Z, Xia C, Li J, Wang Z, Zhang X, Liu Q. A ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors. RSC Adv 2019; 9:14352-14359. [PMID: 35519304 PMCID: PMC9064034 DOI: 10.1039/c9ra01734h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Accepted: 04/30/2019] [Indexed: 12/02/2022] Open
Abstract
Layered two-dimensional (2D) materials often display unique functionalities for flexible 2D optoelectronic device applications involving natural flexibility and tunable bandgap by bandgap engineering. Composition manipulation by alloying of these 2D materials represents an effective way in fulfilling bandgap engineering, which is particularly true for SnS2xSe2(1−x) alloys showing a continuous bandgap modulation from 2.1 eV for SnS2 to 1.0 eV for SnSe2. Here, we report that a ternary SnS1.26Se0.76 alloy nanosheet can serve as an efficient flexible photodetector, possessing excellent mechanical durability, reproducibility, and high photosensitivity. The photodetectors show a broad spectrum detection ranging from visible to near infrared (NIR) light. These findings demonstrate that the ternary SnS1.26Se0.76 alloy can act as a promising 2D material for flexible and wearable optoelectronic devices. Bandgap engineering of a ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors.![]()
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19
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Kwon DK, Porte Y, Ko KY, Kim H, Myoung JM. High-Performance Flexible ZnO Nanorod UV/Gas Dual Sensors Using Ag Nanoparticle Templates. ACS APPLIED MATERIALS & INTERFACES 2018; 10:31505-31514. [PMID: 30133251 DOI: 10.1021/acsami.8b13046] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Flexible zinc oxide (ZnO) nanorod (NR) ultraviolet (UV)/gas dual sensors using silver (Ag) nanoparticle (NP) templates were successfully fabricated on a polyimide substrate with nickel electrodes. Arrays of Ag NPs were used as a template for the growth of ZnO NRs, which could enhance the flexibility and the sensing properties of the devices through the localized surface plasmon resonance (LSPR) effect. The Ag NPs were fabricated by the rapid thermal annealing process of Ag thin films, and ZnO NRs were grown on Ag NPs to maximize the surface area and form networks with rod-to-rod contacts. Because of the LSPR effect by Ag NPs, the UV photoresponse of the ZnO NRs was amplified and the depletion region of ZnO NRs was formed quickly because of the Schottky contact with the Ag NPs. As a consequence, ZnO NR UV/gas dual sensors grown on the Ag NP template with a diameter of 28 nm exhibited the outstanding UV-sensing characteristics with a UV on-off ratio of 3628 and a rising time ( tr) and a decay time ( td) of 3.52 and 0.33 s upon UV exposure, along with excellent NO2-sensing characteristics with a stable gas on-off ratio of 288.5 and a tr and td of 38 and 62 s upon NO2 exposure. Furthermore, the sensors grown on the Ag NP template exhibited good mechanical flexibility and stable sensing properties without significant degradation even after the bending test up to 10 000 cycles at the bending radius of 5 mm.
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20
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Stroyuk O, Raevskaya A, Gaponik N. Solar light harvesting with multinary metal chalcogenide nanocrystals. Chem Soc Rev 2018; 47:5354-5422. [PMID: 29799031 DOI: 10.1039/c8cs00029h] [Citation(s) in RCA: 87] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
The paper reviews the state of the art in the synthesis of multinary (ternary, quaternary and more complex) metal chalcogenide nanocrystals (NCs) and their applications as a light absorbing or an auxiliary component of light-harvesting systems. This includes solid-state and liquid-junction solar cells and photocatalytic/photoelectrochemical systems designed for the conversion of solar light into the electric current or the accumulation of solar energy in the form of products of various chemical reactions. The review discusses general aspects of the light absorption and photophysical properties of multinary metal chalcogenide NCs, the modern state of the synthetic strategies applied to produce the multinary metal chalcogenide NCs and related nanoheterostructures, and recent achievements in the metal chalcogenide NC-based solar cells and the photocatalytic/photoelectrochemical systems. The review is concluded by an outlook with a critical discussion of the most promising ways and challenging aspects of further progress in the metal chalcogenide NC-based solar photovoltaics and photochemistry.
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Affiliation(s)
- Oleksandr Stroyuk
- L.V. Pysarzhevsky Institute of Physical Chemistry, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine.
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21
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Frisenda R, Molina-Mendoza AJ, Mueller T, Castellanos-Gomez A, van der Zant HSJ. Atomically thin p-n junctions based on two-dimensional materials. Chem Soc Rev 2018; 47:3339-3358. [PMID: 29683464 DOI: 10.1039/c7cs00880e] [Citation(s) in RCA: 94] [Impact Index Per Article: 15.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.
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Affiliation(s)
- Riccardo Frisenda
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain.
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22
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Yao J, Zheng Z, Yang G. Layered tin monoselenide as advanced photothermal conversion materials for efficient solar energy-driven water evaporation. NANOSCALE 2018; 10:2876-2886. [PMID: 29367961 DOI: 10.1039/c7nr09229f] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Solar energy-driven water evaporation lays a solid foundation for important photothermal applications such as sterilization, seawater desalination, and electricity generation. Due to the strong light-matter coupling, broad absorption wavelength range, and prominent quantum confinement effect, layered tin monoselenide (SnSe) holds a great potential to effectively harness solar irradiation and convert it to heat energy. In this study, SnSe is successfully deposited on a centimeter-scale nickel foam using a facile one-step pulsed-laser deposition approach. Importantly, the maximum evaporation rate of SnSe-coated nickel foam (SnSe@NF) reaches 0.85 kg m-2 h-1, which is even 21% larger than that obtained with the commercial super blue coating (0.7 kg m-2 h-1) under the same condition. A systematic analysis reveals that its good photothermal conversion capability is attributed to the synergetic effect of multi-scattering-induced light trapping and the optimal trade-off between light absorption and phonon emission. Finally, the SnSe@NF device is further used for seawater evaporation, demonstrating a comparable evaporation rate (0.8 kg m-2 h-1) to that of fresh water and good stability over many cycles of usage. In summary, the current contribution depicts a facile one-step scenario for the economical and efficient solar-enabled SnSe@NF evaporation devices. More importantly, an in-depth analysis of the photothermal conversion mechanism underneath the layered materials depicts a fundamental paradigm for the design and application of photothermal devices based on them in the future.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, School of Physics, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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Zheng Z, Yao J, Wang B, Yang Y, Yang G, Li J. Self-Assembly High-Performance UV-vis-NIR Broadband β-In 2Se 3/Si Photodetector Array for Weak Signal Detection. ACS APPLIED MATERIALS & INTERFACES 2017; 9:43830-43837. [PMID: 29192488 DOI: 10.1021/acsami.7b16329] [Citation(s) in RCA: 37] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The emergence of a rich variety of layered materials has attracted considerable attention in recent years because of their exciting properties. However, the applications of layered materials in optoelectronic devices are hampered by the low light absorption of monolayers/few layers, the lack of p-n junction, and the challenges for large-scale production. Here, we report a scalable production of β-In2Se3/Si heterojunction arrays using pulsed-laser deposition. Photodetectors based on the as-produced heterojunction array are sensitive to a broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm), showing a high responsivity (5.9 A/W), a decent current on/off ratio (∼600), and a superior detectivity (4.9 × 1012 jones), simultaneously. These figures-of-merits are among the best values of the reported heterojunction-based photodetectors. In addition, these devices can further enable the detection of weak signals, as successfully demonstrated with weak light sources including a flashlight, lighter, and fluorescent light. Device physics modeling shows that their high performance is attributed to the strong light absorption of the relatively thick β-In2Se3 film (20.3 nm) and the rational energy band structures of β-In2Se3 and Si, which allows efficient separation of photoexcited electron-hole pairs. These results offer a new insight into the rational design of optoelectronic devices from the synergetic effect of layered materials as well as mature semiconductor technology.
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Affiliation(s)
- Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology , Guangzhou, 510006 Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, 510275 Guangdong, P. R. China
| | - Bing Wang
- Institute of Micro-Nano Optoelectronic Technology, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, College of Electronic Science and Technology, Shenzhen University , Shenzhen, 518060 Guangdong, P. R. China
| | - Yibin Yang
- School of Materials and Energy, Guangdong University of Technology , Guangzhou, 510006 Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, 510275 Guangdong, P. R. China
| | - Jingbo Li
- School of Materials and Energy, Guangdong University of Technology , Guangzhou, 510006 Guangdong, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
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Zheng Z, Yao J, Wang B, Yang G. A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology. NANOTECHNOLOGY 2017; 28:415501. [PMID: 28758899 DOI: 10.1088/1361-6528/aa8317] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In2Se3) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C2H2) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C2H2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In2Se3 as a new candidate for future application in monitoring C2H2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.
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Affiliation(s)
- Zhaoqiang Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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