1
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Rani S, Das S, Siddiqui SA, Jain A, Rani D, Pahuja M, Chaudhary N, Afshan M, Ghosh R, Swadia D, Riyajuddin SK, Bera C, Ghosh K. Harnessing Environmental Sensitivity in SnSe-Based Metal-Semiconductor-Metal Devices: Unveiling Negative Photoconductivity for Enhanced Photodetector Performance and Humidity Sensing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:26899-26914. [PMID: 38741334 DOI: 10.1021/acsami.4c02539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The extreme sensitivity of 2D-layered materials to environmental adsorbates, which is typically seen as a challenge, is harnessed in this study to fine-tune the material properties. This work investigates the impact of environmental adsorbates on electrical properties by studying metal-semiconductor-metal (MSM) devices fabricated on CVD-synthesized SnSe flakes. The freshly prepared devices exhibit positive photoconductivity (PPC), whereas they gradually develop negative photoconductivity (NPC) after being exposed to an ambient environment for ∼1 day. While the photodetectors based on positive photoconductivity exhibit a responsivity and detectivity of 6.1 A/W and 5.06 × 108 Jones, the same for the negative photoconductivity-based photodetector reaches up to 36.3 A/W and 1.49 × 109 Jones, respectively. In addition, the noise-equivalent power of the NPC photodetector decreases by 300 times as compared to the PPC device, which implies a prominent detection capability of the NPC device against weak photo signals. To substantiate the hypothesis that negative photoconductivity stems from the photodesorption of water and oxygen molecules on the dangling bonds of SnSe flakes, the flakes are etched along the most active planes (010) with a focused laser beam in an inert environment, which enhances responsivity by 43%, supporting negative photoconductivity linked to photodesorption. Furthermore, the humidity-dependent dark current variation of the NPC photodetectors is used to design a humidity sensor for human respiration monitoring with faster response and recovery times of 0.72 and 0.68 s, respectively. These findings open up the possibility of tuning the photoelectrical response of layered materials in a facile manner to develop future sensors and optoelectronic multifunctional devices.
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Affiliation(s)
- Seema Rani
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Subhabrata Das
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Shumile Ahmed Siddiqui
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Ayushi Jain
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Daya Rani
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Mansi Pahuja
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Nikita Chaudhary
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Mohd Afshan
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Rishita Ghosh
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Devansh Swadia
- Indian Institute of Science Education and Research Mohali, Knowledge City-Sector 81, Mohali 140306, India
| | - S K Riyajuddin
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Chandan Bera
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Kaushik Ghosh
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
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2
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Rawat A, Patra L, Pandey R, Karna SP. First-principles study of the oxidation susceptibility of WS 2, WSe 2, and WTe 2 monolayers. NANOSCALE 2024; 16:7437-7442. [PMID: 38529823 DOI: 10.1039/d3nr06089f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
The environmental stability of two-dimensional (2D) transition metal dichalcogenide monolayers is of great importance for their applications in electronic, photonic, and energy storage devices. In this study, we focus on understanding the susceptibility of WS2, WSe2, and WTe2 monolayers to oxygen exposure in the form of atomic oxygen and O2 and O3 molecules, respectively. Calculations based on the van der Waals-corrected density functional theory predicted that O2 and O3 molecules are weakly adsorbed on these monolayers, although atomic oxygen prefers chemisorption accompanied by a significant charge transfer from the surface to oxygen. In the physisorbed molecular configurations consisting of O2 and O3, the partially oxidized monolayers retain their geometrical and electronic structures. The calculated transition path as the oxygen approaches the surface shows a high-energy barrier for all cases, thus explaining the photo-induced formation of the oxidized configurations in the experiments. Furthermore, oxidizing the WS2 monolayer is predicted to modify its electronic structure, reducing the band gap with increasing oxygen coverage on the surface. Overall, the calculated results predict the resilience of WS2, WSe2, and WTe2 monolayers against oxygen exposure, thus ensuring stability for devices fabricated with these monolayers.
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Affiliation(s)
- Ashima Rawat
- Department of Physics, Michigan Technological University, Houghton, MI, 49931, USA.
| | - Lokanath Patra
- Department of Mechanical Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5070, USA
| | - Ravindra Pandey
- Department of Physics, Michigan Technological University, Houghton, MI, 49931, USA.
| | - Shashi P Karna
- DEVCOM Army Research Laboratory, Weapons, and Materials Research Directorate, ATTN: FCDD-RLW, Aberdeen Proving Ground, Aberdeen, Maryland 21005-5069, USA.
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3
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Al-Basheer W, Viernes C, Cheng M, Zheng R, Netzke S, Pichugin K, Sciaini G. Determining the Out-of-Plane Longitudinal Sound Speed in GeS by Broadband Time-Domain Brillouin Scattering. ACS OMEGA 2024; 9:15463-15467. [PMID: 38585054 PMCID: PMC10993360 DOI: 10.1021/acsomega.4c00266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 02/04/2024] [Accepted: 02/28/2024] [Indexed: 04/09/2024]
Abstract
Over the past decade, two-dimensional (2D) layered semiconducting materials, with their distinctive structures and unique physicochemical properties, have attracted attention for potential applications in photonics and optoelectronics. In this study, we utilized time-domain broadband Brillouin scattering on a single germanium monosulfide (GeS) crystal to determine the out-of-plane longitudinal sound speed, evaluated at vL = (4035 ± 200) m/s. The reported results demonstrate the effectiveness of this nondestructive, all-optical technique for measuring the elastic properties in fragile 2D layered materials and provide the value of the out-of-plane compressive elastic constant, C = (69 ± 7) GPa.
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Affiliation(s)
- Watheq Al-Basheer
- Department
of Physics, King Fahd University of Petroleum
& Minerals, Dhahran 31261, Saudi Arabia
- Interdisciplinary
Research Center of Membranes and Water Security, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia
| | - Christian Viernes
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Meixin Cheng
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Ruofei Zheng
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Sam Netzke
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Kostyantyn Pichugin
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - German Sciaini
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
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4
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Freire RLH, de Lima FC, Fazzio A. Substrate suppression of oxidation process in pnictogen monolayers. Phys Chem Chem Phys 2024; 26:9149-9154. [PMID: 37869980 DOI: 10.1039/d3cp03976e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2023]
Abstract
2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through ab initio calculations, we investigated freestanding and SiC-supported As, Sb, and Bi mono-elemental layers. The oxidation process occurs through an O2 spin-state transition, accounted for within the Landau-Zener transition. Additionally, we have investigated the oxidation barriers and the role of spin-orbit coupling. Our calculations pointed out that the presence of SiC substrate reduces the oxidation time scale compared to a freestanding monolayer. We have extracted the energy barrier transition, compatible with our spin-transition analysis. Besides, spin-orbit coupling is relevant to the oxidation mechanisms and alters time scales. The energy barriers decrease as the pnictogen changes from As to Sb to Bi for the freestanding systems, while for SiC-supported, they increase across the pnictogen family. Our computed energy barriers confirm the enhanced robustness against oxidation for the SiC-supported systems.
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Affiliation(s)
- Rafael L H Freire
- Ilum School of Science, Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, Brazil.
| | - F Crasto de Lima
- Ilum School of Science, Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, Brazil.
| | - A Fazzio
- Ilum School of Science, Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, Brazil.
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5
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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6
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Hlushchenko D, Siudzinska A, Cybinska J, Guzik M, Bachmatiuk A, Kudrawiec R. Stability of mechanically exfoliated layered monochalcogenides under ambient conditions. Sci Rep 2023; 13:19114. [PMID: 37925524 PMCID: PMC10625602 DOI: 10.1038/s41598-023-46092-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 10/27/2023] [Indexed: 11/06/2023] Open
Abstract
Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS2, MoSe2, WS2, or WSe2.
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Affiliation(s)
- Daria Hlushchenko
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
| | - Anna Siudzinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Joanna Cybinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Malgorzata Guzik
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Alicja Bachmatiuk
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Robert Kudrawiec
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
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7
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Higashitarumizu N, Tajima S, Kim J, Cai M, Javey A. Long operating lifetime mid-infrared LEDs based on black phosphorus. Nat Commun 2023; 14:4845. [PMID: 37563157 PMCID: PMC10415361 DOI: 10.1038/s41467-023-40602-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 08/01/2023] [Indexed: 08/12/2023] Open
Abstract
Black phosphorus (BP) is a narrow bandgap layered semiconductor promising for mid-infrared optoelectronic applications. BP-based devices have been shown to surpass state-of-the-art mid-infrared detectors and light-emitting diodes (LEDs) in terms of performance. Despite their device advantages, the material's inherent instability in the air could hinder its use in practical optoelectronic applications. Here, we investigated the impact of passivation on the device lifetime of BP LEDs, which deteriorate in a matter of seconds without using passivation. The lifetime is significantly extended with an Al2O3 passivation layer and nitrogen packaging via atomic layer deposition and ultra-violet curable resin sealing. The operational lifetime (half-life) at room temperature is extrapolated to be ~15,000 h with an initial power density of 340 mW/cm2 based on accelerated life testing. The present results indicate that efficient BP optoelectronics can be highly robust through simple and scalable packaging technologies, with important practical implications for mid-infrared applications.
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Affiliation(s)
- Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
| | - Shogo Tajima
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
| | - Jongchan Kim
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
- Department of Integrated Display, Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Mingyang Cai
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA.
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8
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He W, Zhang X, Gong D, Nie Y, Xiang G. Mn-X (X = F, Cl, Br, I) Co-Doped GeSe Monolayers: Stabilities and Electronic, Spintronic and Optical Properties. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1862. [PMID: 37368292 DOI: 10.3390/nano13121862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2023] [Revised: 06/10/2023] [Accepted: 06/12/2023] [Indexed: 06/28/2023]
Abstract
GeSe monolayer (ML) has recently attracted much interest due to its unique structure and excellent physical properties that can be effectively tuned through single doping of various elements. However, the co-doping effects on GeSe ML are rarely studied. In this study, the structures and physical properties of Mn-X (X = F, Cl, Br, I) co-doped GeSe MLs are investigated by using first-principle calculations. The formation energy and phonon disspersion analyses reveal the stability of Mn-Cl and Mn-Br co-doped GeSe MLs and instability of Mn-F and Mn-I co-doped GeSe MLs. The stable Mn-X (X = Cl, Br) co-doped GeSe MLs exhibit complex bonding structures with respect to Mn-doped GeSe ML. More importantly, Mn-Cl and Mn-Br co-doping can not only tune magnetic properties, but also change the electronic properties of GeSe MLs, which makes Mn-X co-doped GeSe MLs indirect band semiconductors with anisotropic large carrier mobility and asymmetric spin-dependent band structures. Furthermore, Mn-X (X = Cl, Br) co-doped GeSe MLs show weakened in-plane optical absorption and reflection in the visible band. Our results may be useful for electronic, spintronic and optical applications based on Mn-X co-doped GeSe MLs.
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Affiliation(s)
- Wenjie He
- College of Physics, Sichuan University, Chengdu 610065, China
| | - Xi Zhang
- College of Physics, Sichuan University, Chengdu 610065, China
| | - Dan Gong
- College of Physics, Sichuan University, Chengdu 610065, China
| | - Ya Nie
- College of Physics, Sichuan University, Chengdu 610065, China
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu 610065, China
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9
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Liu HY, Wu JY. Tunable Electronic Properties of Two-Dimensional GaSe 1-xTe x Alloys. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:818. [PMID: 36903697 PMCID: PMC10005243 DOI: 10.3390/nano13050818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Revised: 02/18/2023] [Accepted: 02/21/2023] [Indexed: 06/18/2023]
Abstract
In this work, we performed a theoretical study on the electronic properties of monolayer GaSe1-xTex alloys using the first-principles calculations. The substitution of Se by Te results in the modification of a geometric structure, charge redistribution, and bandgap variation. These remarkable effects originate from the complex orbital hybridizations. We demonstrate that the energy bands, the spatial charge density, and the projected density of states (PDOS) of this alloy are strongly dependent on the substituted Te concentration.
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Affiliation(s)
- Hsin-Yi Liu
- Department of Physics/QTC/Hi-GEM, National Cheng Kung University, Tainan 701, Taiwan
| | - Jhao-Ying Wu
- Center of General Studies, National Kaohsiung University of Science and Technology, Kaohsiung 811, Taiwan
- Department of Energy and Refrigerating Air-Conditioning Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 811, Taiwan
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10
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Cheng K, Hu W, Guo X, Wu L, Guo S, Su Y. Electronic structures and photovoltaic applications of vdW heterostructures based on Janus group-IV monochalcogenides: insights from first-principles calculations. Phys Chem Chem Phys 2023; 25:5663-5672. [PMID: 36734472 DOI: 10.1039/d2cp05663a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
Abstract
The van der Waals integration can help 2D materials modulate their properties and provide more opportunities for 2D materials in the next-generation high-performance optoelectronic devices. Using first-principles calculations, we explored the atomic and electronic structures of 2D pristine and Janus group-IV monochalcogenides and found the internal vertical electric field at Janus group-IV monochalcogenides. Then, we constructed vdW heterostructures with pristine and Janus group-IV monochalcogenides monolayers as building blocks and explored their atomic structures and band alignments. Our results demonstrate that these vdW heterostructures can be synthesized experimentally, and the surface termination of the Janus monolayer at the interface can significantly help the heterostructure realize the transition from type I to type II due to the intrinsic electric field. Moreover, we found eight vdW heterostructures with a mismatch of less than 5% exhibiting type II band alignment with charge densities of VBM and CBM mainly localized at different domains of heterostructures, and excellent power conversion efficiency (∼19%) in photovoltaics are also predicted for these heterostructures with type II band alignment. Our results not only give an idea to use the Janus monolayer as building blocks to construct vdW heterostructures and modulate their band alignment but also provide a guide to the experimental researcher to design more efficient photovoltaic devices with Janus group-IV monochalcogenides.
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Affiliation(s)
- Kai Cheng
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China.
| | - Wenbo Hu
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China.
| | - Xu Guo
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China.
| | - Lifan Wu
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China.
| | - Sandong Guo
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China.
| | - Yan Su
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
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11
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Jo HK, Kim J, Lim YR, Shin S, Song DS, Bae G, Kwon YM, Jang M, Yim S, Myung S, Lee SS, Kim CG, Kim KK, Lim J, Song W. Wafer-Scale Production of Two-Dimensional Tin Monoselenide: Expandable Synthetic Platform for van der Waals Semiconductor-Based Broadband Photodetectors. ACS NANO 2023; 17:1372-1380. [PMID: 36625593 DOI: 10.1021/acsnano.2c09854] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A synthetic platform for industrially applicable two-dimensional (2D) semiconductors that addresses the paramount issues associated with large-scale production, wide-range photosensitive materials, and oxidative stability has not yet been developed. In this study, we attained the 6 in. scale production of 2D SnSe semiconductors with spatial homogeneity using a rational synthetic platform based on the thermal decomposition of solution-processed single-source precursors. The long-range structural and chemical homogeneities of the 2D SnSe layers are manifested using comprehensive spectroscopic analyses. Furthermore, the capability of the SnSe-based photodetectors for broadband photodetection is distinctly verified. The photoresponsivity and detectivity of the SnSe-based photodetectors are 5.89 A W-1 and 1.8 × 1011 Jones at 532 nm, 1.2 A W-1 and 3.7 × 1010 Jones at 1064 nm, and 0.14 A W-1 and 4.3 × 109 Jones at 1550 nm, respectively. The minimum rise times for the 532 and 1064 nm lasers are 62 and 374 μs, respectively. The photoelectrical analysis of the 5 × 5 SnSe-based photodetector array reveals 100% active devices with 95.06% photocurrent uniformity. We unequivocally validated that the air and thermal stabilities of the photocurrent yielded from the SnSe-based photodetector are determined to be >30 d in air and 160 °C, respectively, which are suitable for optoelectronic applications.
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Affiliation(s)
- Hyeong-Ku Jo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jahee Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Yi Rang Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sunyoung Shin
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Da Som Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Garam Bae
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Yeong Min Kwon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
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12
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Guo Y, Zhao Y, Zhou S, Zhao J. Oxidation behavior of layered Fe nGeTe 2 ( n = 3, 4, 5) and Cr 2Ge 2Te 6 governed by interlayer coupling. NANOSCALE 2022; 14:11452-11460. [PMID: 35904500 DOI: 10.1039/d2nr02375j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Layered magnetic materials have recently received tremendous attention due to an attractive combination of functional properties suitable for nanoelectronics and spintronic applications. Enhancing the air stability of the material is a prerequisite for long-term durability of devices. However, the oxidation mechanism of layered magnetic materials is yet to be revealed. Herein we explore the oxidation behavior of monolayer and multilayer FenGeTe2 (n = 3, 4, 5) and Cr2Ge2Te6 using first-principles calculations. The results show that these monolayer systems are prone to be oxidized in ambient air. With increasing thickness, however, multilayer FenGeTe2 exhibits distinct oxidation behavior from its monolayer counterparts, originating from its unexpected strong interlayer coupling characterized by wavefunction overlapping of adjacent Te atoms between FenGeTe2 layers. Moreover, O2 adsorption does not severely deteriorate the magnetism of layered FenGeTe2 and Cr2Ge2Te6. Given the fact that oxidation properties can be altered by interlayer coupling, our work opens a paradigm for obtaining oxidation-resistant layered materials.
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Affiliation(s)
- Yu Guo
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Yanyan Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Si Zhou
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
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13
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Yan C, Yi J, Li D, Xu C, Cheng L. FeP 2 monolayer: isoelectronic analogue of MoS 2 with excellent electronic and optical properties. Phys Chem Chem Phys 2022; 24:13376-13383. [PMID: 35608177 DOI: 10.1039/d2cp01057g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional semiconductors with suitable indirect band gaps, excellent light absorption capacity, and oxidation resistance are particularly suitable for material applications. Here based on first-principle calculations, we report that the FeP2 monolayer, which is isoelectronic with MoS2, has novel electronic properties and an ultra-low diffusion energy barrier of K on the surface, indicating its potential as an anode material of K-ion batteries. The calculated phonon dispersion curves, molecular dynamics, and elastic constants showed that it has high structural stability and oxidation resistance. The monolayer was a semiconductor with an indirect band gap of 0.68 eV. In addition, the FeP2 monolayer had obvious light absorption in the infrared, visible, and ultraviolet regions, which can be widely used in optoelectronic devices. Bonding analysis showed that there were multicenter bonds inside every hexagonal ring. As the anode material of K-ion batteries, the FeP2 monolayer had a capacity of 456.84 mA h g-1, low diffusion energy barrier, and open-circuit voltage. All these characteristics suggest that the FeP2 monolayer is a potential anode material for K-ion batteries, which needs to be further verified by experiments.
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Affiliation(s)
- Chen Yan
- Department of Chemistry, Key Laboratory of Functional Inorganic Materials of Anhui Province, Anhui University, Hefei, Anhui 230601, P. R. China.
| | - Jiuqi Yi
- Department of Chemistry, Key Laboratory of Functional Inorganic Materials of Anhui Province, Anhui University, Hefei, Anhui 230601, P. R. China.
| | - Dan Li
- Department of Chemistry, Key Laboratory of Functional Inorganic Materials of Anhui Province, Anhui University, Hefei, Anhui 230601, P. R. China.
| | - Chang Xu
- Department of Chemistry, Key Laboratory of Functional Inorganic Materials of Anhui Province, Anhui University, Hefei, Anhui 230601, P. R. China.
| | - Longjiu Cheng
- Department of Chemistry, Key Laboratory of Functional Inorganic Materials of Anhui Province, Anhui University, Hefei, Anhui 230601, P. R. China. .,Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei, 230601, P. R. China
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14
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Kong W, Zhang Y, Jiang X, Su Y, Liu H, Gao J. The quantum confinement effects on the electronic properties of monolayer GeS nanoribbon with tube-edged reconstruction. NANOTECHNOLOGY 2022; 33:345202. [PMID: 35584618 DOI: 10.1088/1361-6528/ac70e7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer α-phase GeS is promising for many novel applications due to its high carrier mobility and suitable bandgap. Recently, the metal and nonmetal zigzag edges of monolayer α-phase GeS have been predicted to undergo universal ZZ(Ge-Tube)/ZZ(S-R) edge reconstruction. Therefore, studies on GeSNR should be reconsidered. In this paper, we study the quantum confinement effects on the electronic properties of edge reconstructed monolayer GeS nanoribbon by using first-principles calculations. As width of the nanoribbon increases from 10 Å to 41 Å, the band gap keeps indirect and linearly decreases from 1.57 eV to 0.87 eV. Robust spatial separation of valence band maximum and conduction band minimum exist in reconstructed GeS nanoribbon with width larger than 19 Å. Moreover, high carrier mobility is expected in the reconstructed GeS nanoribbon. Our results suggest that reconstructed GeS nanoribbon is an important candidate for optoelectronics and photocatalytic.
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Affiliation(s)
- Weizheng Kong
- Dalian University of Technology, No.2 Linggong Road, Ganjingzi District,, Dalian, Liaoning, 116024, CHINA
| | - Yanxue Zhang
- Dalian University of Technology, No.2 Linggong Road, Ganjingzi District,, Dalian, Liaoning, 116024, CHINA
| | - Xue Jiang
- Dalian University of Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams,Ministry of Education, No.2 linggong road, Ganjingzi District, Dalian, Liaoning, 116024, CHINA
| | - Yan Su
- school of Physics, Dalian University of Technology, No.2 linggong road Ganjingzi District, Dalian, 116024, CHINA
| | - Hongsheng Liu
- Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics, Dalian University of Technology, 2 Linggong road, Ganjingzi District, Dalian, Liaoning, 116024, CHINA
| | - Junfeng Gao
- Dalian University of Technology, No.2 Linggong Road, Ganjingzi District,, Dalian, Liaoning, 116024, CHINA
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15
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Guo X, Wang Y, Elbourne A, Mazumder A, Nguyen CK, Krishnamurthi V, Yu J, Sherrell PC, Daeneke T, Walia S, Li Y, Zavabeti A. Doped 2D SnS materials derived from liquid metal-solution for tunable optoelectronic devices. NANOSCALE 2022; 14:6802-6810. [PMID: 35471407 DOI: 10.1039/d2nr01135b] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Gas-liquid reaction phenomena on liquid-metal solvents can be used to form intriguing 2D materials with large lateral dimensions, where the free energies of formation determine the final product. A vast selection of elements can be incorporated into the liquid metal-based nanostructures, offering a versatile platform for fabricating novel optoelectronic devices. While conventional doping techniques of semiconductors present several challenges for 2D materials. Liquid metals provide a facile route for obtaining doped 2D semiconductors. In this work, we successfully demonstrate that the doping of 2D SnS can be realized in a glove box containing a diluted H2S gas. Low melting point elements such as Bi and In are alloyed with base liquid Sn in varying concentrations, resulting in the doping of 2D SnS layers incorporating Bi and In sulphides. Optoelectronic properties for photodetectors and piezoelectronics can be fine-tuned through the controlled introduction of selective migration doping. The structural modification of 2D SnS results in a 22.6% enhancement of the d11 piezoelectric coefficient. In addition, photodetector response times have increased by several orders of magnitude. Doping methods using liquid metals have significantly changed the photodiode and piezoelectric device performances, providing a powerful approach to tune optoelectronic device outputs.
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Affiliation(s)
- Xiangyang Guo
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yichao Wang
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- School of Life and Environmental Sciences, Deakin University, Geelong, Victoria, 3216, Australia
| | - Aaron Elbourne
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Aishani Mazumder
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Chung Kim Nguyen
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | | | - Jerry Yu
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
| | - Torben Daeneke
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yongxiang Li
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Ali Zavabeti
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
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16
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17
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Sherrell PC, Fronzi M, Shepelin NA, Corletto A, Winkler DA, Ford M, Shapter JG, Ellis AV. A bright future for engineering piezoelectric 2D crystals. Chem Soc Rev 2021; 51:650-671. [PMID: 34931635 DOI: 10.1039/d1cs00844g] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
The piezoelectric effect, mechanical-to-electrical and electrical-to-mechanical energy conversion, is highly beneficial for functional and responsive electronic devices. To fully exploit this property, miniaturization of piezoelectric materials is the subject of intense research. Indeed, select atomically thin 2D materials strongly exhibit the piezoelectric effect. The family of 2D crystals consists of over 7000 chemically distinct members that can be further manipulated in terms of strain, functionalization, elemental substitution (i.e. Janus 2D crystals), and defect engineering to induce a piezoelectric response. Additionally, most 2D crystals can stack with other similar or dissimilar 2D crystals to form a much greater number of complex 2D heterostructures whose properties are quite different to those of the individual constituents. The unprecedented flexibility in tailoring 2D crystal properties, coupled with their minimal thickness, make these emerging highly attractive for advanced piezoelectric applications that include pressure sensing, piezocatalysis, piezotronics, and energy harvesting. This review summarizes literature on piezoelectricity, particularly out-of-plane piezoelectricity, in the vast family of 2D materials as well as their heterostructures. It also describes methods to induce, enhance, and control the piezoelectric properties. The volume of data and role of machine learning in predicting piezoelectricity is discussed in detail, and a prospective outlook on the 2D piezoelectric field is provided.
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Affiliation(s)
- Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia.
| | - Marco Fronzi
- School of Mathematical and Physical Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.,Shibaura Institute of Technology, SIT Research Laboratories, 3-7-5, Toyosu, Koto-ku, Tokyo, 135-8548, Japan.
| | - Nick A Shepelin
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia. .,Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Alexander Corletto
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia. .,Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - David A Winkler
- Monash Institute of Pharmaceutical Sciences, Monash University, 381 Royal Parade, Parkville, Victoria 3052, Australia.,School of Biochemistry and Genetics, La Trobe Institute for Molecular Science, La Trobe University, Kingsbury Drive, Bundoora, Victoria 3086, Australia.,School of Pharmacy, The University of Nottingham, Nottingham NG7 2RD, UK
| | - Mike Ford
- School of Mathematical and Physical Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Joseph G Shapter
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Amanda V Ellis
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia.
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18
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Qin Y, Shen X, Bai Y. First-principles prediction of strain-induced gas-sensing tuning in tin sulfide. Phys Chem Chem Phys 2021; 23:18712-18723. [PMID: 34612409 DOI: 10.1039/d1cp02770k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
A challenge in the application of two-dimensional (2D) SnS in gas-sensing field is that the SnS monolayer is highly sensitive to oxidizing gases, whereas it is naturally deactivated towards reducing gases. The non-sensitivity of SnS to reducing gases is a problem that needs to be solved urgently in an economic and effective manner. Hence, in this work, we propose a strategy of applying strain modulation on the SnS monolayer to optimize its sensitivity and selectivity for reducing gases fundamentally. Generally, the strain modulation applied on a semiconductor gives rise to a change in its band gap (BG). Based on the first-principles calculations, the strain on SnS was found to induce strong degeneracy and energy-level splitting. Unusually, the tensile strain (≥3%) applied could transform the SnS monolayer from indirect-gap semiconductors to direct-gap semiconductors, manifesting a promising optical application prospect but not appropriate for the gas-sensing filed. Comparatively, the compressive strain (≥3%) on SnS could generate new electronic states at the edge of the conduction band of the SnS monolayer, which increases the conductivity and the weak interaction. Thus, the adsorption of reducing gases on the SnS monolayer is enhanced from physisorption to chemisorption, resulting in a considerable increase in the sensitivity performance to the three reducing gas molecules (NH3, H2S, and CO). The induced symmetry breaking of the SnS monolayer under compressive strain leads to much higher surface activation towards reducing gases, which improves its adsorption capability and the ability of screening oxidizing gas molecules. The present work provides key information for novel designs of strain-sensitive dual-function sensors based on SnS.
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Affiliation(s)
- Yuxiang Qin
- School of Microelectronics, Tianjin University, Tianjin 300072, China.
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19
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Zappia M, Bianca G, Bellani S, Curreli N, Sofer Z, Serri M, Najafi L, Piccinni M, Oropesa-Nuñez R, Marvan P, Pellegrini V, Kriegel I, Prato M, Cupolillo A, Bonaccorso F. Two-Dimensional Gallium Sulfide Nanoflakes for UV-Selective Photoelectrochemical-type Photodetectors. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:11857-11866. [PMID: 34276861 PMCID: PMC8279705 DOI: 10.1021/acs.jpcc.1c03597] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Revised: 04/28/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition-metal monochalcogenides have been recently predicted to be potential photo(electro)catalysts for water splitting and photoelectrochemical (PEC) reactions. Differently from the most established InSe, GaSe, GeSe, and many other monochalcogenides, bulk GaS has a large band gap of ∼2.5 eV, which increases up to more than 3.0 eV with decreasing its thickness due to quantum confinement effects. Therefore, 2D GaS fills the void between 2D small-band-gap semiconductors and insulators, resulting of interest for the realization of van der Waals type-I heterojunctions in photocatalysis, as well as the development of UV light-emitting diodes, quantum wells, and other optoelectronic devices. Based on theoretical calculations of the electronic structure of GaS as a function of layer number reported in the literature, we experimentally demonstrate, for the first time, the PEC properties of liquid-phase exfoliated GaS nanoflakes. Our results indicate that solution-processed 2D GaS-based PEC-type photodetectors outperform the corresponding solid-state photodetectors. In fact, the 2D morphology of the GaS flakes intrinsically minimizes the distance between the photogenerated charges and the surface area at which the redox reactions occur, limiting electron-hole recombination losses. The latter are instead deleterious for standard solid-state configurations. Consequently, PEC-type 2D GaS photodetectors display a relevant UV-selective photoresponse. In particular, they attain responsivities of 1.8 mA W-1 in 1 M H2SO4 [at 0.8 V vs reversible hydrogen electrode (RHE)], 4.6 mA W-1 in 1 M Na2SO4 (at 0.9 V vs RHE), and 6.8 mA W-1 in 1 M KOH (at 1.1. V vs RHE) under 275 nm illumination wavelength with an intensity of 1.3 mW cm-2. Beyond the photodetector application, 2D GaS-based PEC-type devices may find application in tandem solar PEC cells in combination with other visible-sensitive low-band-gap materials, including transition-metal monochalcogenides recently established for PEC solar energy conversion applications.
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Affiliation(s)
- Marilena
I. Zappia
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C, 87036 Rende, CS, Italy
| | - Gabriele Bianca
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Sebastiano Bellani
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Nicola Curreli
- Functional
Nanosystems, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova, Italy
| | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Michele Serri
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Leyla Najafi
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Marco Piccinni
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Reinier Oropesa-Nuñez
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Department
of Material Science and Engineering, Uppsala
University, Box 534, 75121 Uppsala, Sweden
| | - Petr Marvan
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Vittorio Pellegrini
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Ilka Kriegel
- Functional
Nanosystems, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova, Italy
| | - Mirko Prato
- Materials
Characterization Facility, Istituto Italiano di Tecnologia, via Morego 30, Genova 16163, Italy
| | - Anna Cupolillo
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C, 87036 Rende, CS, Italy
| | - Francesco Bonaccorso
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
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20
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Chakraborty R, Ahmed S, Subrina S. Functionalization of electronic, spin and optical properties of GeSe monolayer by substitutional doping: a first-principles study. NANOTECHNOLOGY 2021; 32:305701. [PMID: 33845470 DOI: 10.1088/1361-6528/abf6ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2021] [Accepted: 04/12/2021] [Indexed: 06/12/2023]
Abstract
Substitutional doping has traditionally been used to modulate the existing properties of semiconductors and introduce new exciting properties, especially in two-dimensional materials. In this work, we have investigated the impact of substitutional doping (using group III, IV, V, and VI dopants) on the structural, electronic, spin, and optical properties of GeSe monolayer by using first-principles calculations based on density functional theory. Our calculated binding energies, formation energies and phonon dispersion curves of the doped systems support their stability and hence the feasibility of physical realization. Our results further suggest that switching between metallic and semiconducting states of GeSe monolayer can be controlled by dopant atoms with a different number of valence electrons. The band gap of the semiconducting structures can be tuned within a range of 0.2864 eV to 1.17 eV by substituting with different dopants. In addition, most of the doped structures maintain the low effective mass, 0.20m0to 0.59m0for electron and 0.21m0to 0.52m0for hole, which ensures the enhanced transport properties of GeSe based electronic devices. Moreover, when Ge is substituted with group V dopants, a magnetic moment is introduced in an otherwise non-magnetic GeSe monolayer. The optical absorption coefficient of the doped structures can be significantly improved (>2×) in the visible and infrared regions. These intriguing results would encourage the applications of doped GeSe monolayer in next-generation electronic, optoelectronic and spintronic devices.
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Affiliation(s)
- Rajat Chakraborty
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh
| | - Shahnewaz Ahmed
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh
| | - Samia Subrina
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh
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21
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Liang J, Li H, Liu F, Lu J. Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202000290] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Jiakun Liang
- College of Mechanical and Material Engineering North China University of Technology Beijing 100144 P. R. China
| | - Hong Li
- College of Mechanical and Material Engineering North China University of Technology Beijing 100144 P. R. China
| | - Fengbin Liu
- College of Mechanical and Material Engineering North China University of Technology Beijing 100144 P. R. China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
- Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics Nantong 226000 P. R. China
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22
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Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
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Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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23
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Dong Y, Wang S, Yu C, Li F, Gong J, Zhao J. First-principles explorations on P8 and N2 assembled nanowire and nanosheet. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/abd899] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Abstract
‘Bottom-up’ method is a powerful approach to design nanomaterials with desired properties. The bottle neck of being oxidized of phosphorous structures may be conquered by cluster assembling method. Here, we used P8 and N2 as assembling units to construct one-dimensional (1D) nanowire (NW) and two-dimensional (2D) nanosheet (NS), the stability, electronic and magnetic properties of these assembled nanomaterials are investigated using density functional theory (DFT) calculations. The assembled 1D-P8N2 NW and 2D-P8N4 NS are identified to possess good stability, as demonstrated by their high cohesive energies, positive phonon dispersions, and structural integrity through molecular dynamics simulations at 300 and 500 K. Moreover, they also exhibit good anti-oxidization property. The 2D-P8N4 NS is a direct bandgap semiconductor with the HSE06 gap of 2.61 eV, and shows appropriate band-edge aliments and moderate carrier mobility for photocatalyzing water splitting. The 1D-P8N2 NW is an indirect bandgap semiconductor, and Mn doping could convert it into a dilute magnetic semiconductor (DMS) with one Dirac cone in the spin-up channel, while the vdW-type sheet composed of Mn1@1D-P8N2 NWs is a ferromagnetic metal. Our theoretical study is helpful to design stable phosphorus-based nanomaterials with diverse properties and potential applications.
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24
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Yang Y, Liu SC, Li Z, Xue DJ, Hu JS. In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications. Chem Commun (Camb) 2021; 57:565-575. [DOI: 10.1039/d0cc04476h] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry.
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Affiliation(s)
- Yusi Yang
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Shun-Chang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Zongbao Li
- School of Material and Chemical Engineering
- Tongren University
- Tongren 554300
- China
- National Engineering Research Center for Advanced Polymer Processing Technology
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
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25
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He T, Wang Z, Cao R, Li Q, Peng M, Xie R, Huang Y, Wang Y, Ye J, Wu P, Zhong F, Xu T, Wang H, Cui Z, Zhang Q, Gu L, Deng HX, Zhu H, Shan C, Wei Z, Hu W. Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006765. [PMID: 33345467 DOI: 10.1002/smll.202006765] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short-wavelength infrared or even long-wavelength infrared detection. Utilizing extrinsic photoconduction to extend the detection waveband of 2D layered photodetectors is attractive and desirable. However, extrinsic photoconduction has yet not been observed in 2D layered materials. Here, extrinsic photoconduction-induced short-wavelength infrared photodetectors based on Ge-based chalcogenides are reported for the first time and the effectiveness of intrinsic point defects are demonstrated. The detection waveband of room-temperature extrinsic GeSe photodetectors with the assistance of Ge vacancies is broadened to 1.6 µm. Extrinsic GeSe photodetectors have an excellent external quantum efficiency (0.5%) at the communication band of 1.31 µm and polarization-resolved capability to subwaveband radiation. Moreover, room-temperature extrinsic GeS photodetectors with a detection waveband to the communication band of 1.55 µm further verify the versatility of intrinsic point defects. This approach provides design strategies to enrich the functionalities of 2D layered photodetectors.
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Affiliation(s)
- Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruyue Cao
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yan Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhuangzhuang Cui
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - He Zhu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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26
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Pham KD. Theoretical prediction of structural, mechanical, and electronic properties of Janus GeSnX2 (X = S, Se, Te) single-layers. RSC Adv 2021; 11:36682-36688. [PMID: 35494359 PMCID: PMC9043473 DOI: 10.1039/d1ra07813e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Accepted: 11/03/2021] [Indexed: 12/01/2022] Open
Abstract
The breaking of the vertical mirror symmetry in two-dimensional Janus structures has given rise to many outstanding features that do not exist in the original materials. In this work, we study the structural, mechanical, and electronic properties of Janus GeSnX2 (X = S, Se, Te) single-layers using density functional theory. The stability of the investigated Janus structures has been tested through the analysis of their phonon dispersions and elastic parameters. It is found that, with low in-plane stiffness, Janus GeSnX2 single-layers are more mechanically flexible than other two-dimensional materials and their mechanical properties exhibit very high anisotropy. All three single-layers are semiconductors and their bandgap can be altered easily by strain engineering. Due to the asymmetric structure, a vacuum level difference between the two sides is observed, leading to the difference in work function on the two sides of single-layers. Our findings not only provide necessary information about the physical properties of Janus GeSnX2 single-layers but also provide the impetus for further studies on these interesting materials both theoretically and experimentally. The breaking of the vertical mirror symmetry in two-dimensional Janus structures has given rise to many outstanding features that do not exist in the original materials.![]()
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Affiliation(s)
- Khang D. Pham
- Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province 75000, Vietnam
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27
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Shao L, Duan X, Li Y, Zeng F, Ye H, Ding P. Two-dimensional Ga 2O 2 monolayer with tunable band gap and high hole mobility. Phys Chem Chem Phys 2021; 23:666-673. [PMID: 33336669 DOI: 10.1039/d0cp05171c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
By means of density functional theory and unbiased structure search computations, we systematically investigated the stability and electronic properties of a new Ga2O2 monolayer. The phonon spectra and ab initio molecular dynamics simulations show that the Ga2O2 monolayer is dynamically and thermally stable. Moreover, it also shows superior open-air stability. In particular, the Ga2O2 monolayer is an indirect semiconductor with a wide band gap of 2.752 eV and high hole mobility of 4720 cm2 V-1 s-1. Its band gap can be tuned flexibly in a large range by applied strain and layer control. It exhibits high absorption coefficients (>105 cm-1) in the ultraviolet region. The combined novel electronic properties of the Ga2O2 monolayer imply that it is a highly promising material for future applications in electronics and optoelectronics.
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Affiliation(s)
- Li Shao
- School of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China.
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28
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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29
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Wu J, Li JH, Yu YX. A Theoretical Analysis on the Oxidation and Water Dissociation Resistance on Group-IV Phosphide Monolayers. Chemphyschem 2020; 21:2539-2549. [PMID: 32990350 DOI: 10.1002/cphc.202000766] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2020] [Revised: 09/27/2020] [Indexed: 11/07/2022]
Abstract
Group-IV phosphide monolayers (MP, M=C, Si, Ge and Sn) provide a versatile platform for photocatalysts, as well as optoelectronic and nanoelectronic devices. Herein, comprehensive first-principles calculations and ab initio molecular dynamics (AIMD) simulations were performed to explore their stabilities in the air. We identified that the MP monolayers have excellent mechanical properties and their carrier mobilities are higher than that of phosphorene. The MP monolayers were predicted to possess superior oxidation resistance than the boron phosphide (BP) monolayer based on the proposed donation-backdonation theory. It was observed that the dissociation and chemisorption of a water molecule on the monolayers are kinetically difficult both in the water and in oxygen-water environments involving energy barriers of 1.28-3.48 eV. We also performed AIMD simulations at 300, 1000, 1200 and 1500 K. It is noteworthy that only the carbon phosphide (CP) monolayer can retain an intact structure at 1500 K, while the other three monolayers can just sustain to 1200 K. These results provide a guidance for their practical application and experimental fabrication.
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Affiliation(s)
- Jie Wu
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Jia-Hui Li
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Yang-Xin Yu
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, P.R. China
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30
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Sarkar AS, Stratakis E. Recent Advances in 2D Metal Monochalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001655. [PMID: 33173730 PMCID: PMC7610304 DOI: 10.1002/advs.202001655] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
- Physics DepartmentUniversity of CreteHeraklionCrete710 03Greece
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31
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Bianca G, Zappia MI, Bellani S, Sofer Z, Serri M, Najafi L, Oropesa-Nuñez R, Martín-García B, Hartman T, Leoncino L, Sedmidubský D, Pellegrini V, Chiarello G, Bonaccorso F. Liquid-Phase Exfoliated GeSe Nanoflakes for Photoelectrochemical-Type Photodetectors and Photoelectrochemical Water Splitting. ACS APPLIED MATERIALS & INTERFACES 2020; 12:48598-48613. [PMID: 32960559 PMCID: PMC8011798 DOI: 10.1021/acsami.0c14201] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Accepted: 09/22/2020] [Indexed: 05/29/2023]
Abstract
Photoelectrochemical (PEC) systems represent powerful tools to convert electromagnetic radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials are attracting enormous interest as potential advanced photo(electro)catalysts and, recently, 2D group-IVA metal monochalcogenides have been theoretically predicted to be water splitting photocatalysts. In this work, we use density functional theory calculations to theoretically investigate the photocatalytic activity of single-/few-layer GeSe nanoflakes for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) in pH conditions ranging from 0 to 14. Our simulations show that GeSe nanoflakes with different thickness can be mixed in the form of nanoporous films to act as nanoscale tandem systems, in which the flakes, depending on their thickness, can operate as HER- and/or OER photocatalysts. On the basis of theoretical predictions, we report the first experimental characterization of the photo(electro)catalytic activity of single-/few-layer GeSe flakes in different aqueous media, ranging from acidic to alkaline solutions: 0.5 M H2SO4 (pH 0.3), 1 M KCl (pH 6.5), and 1 M KOH (pH 14). The films of the GeSe nanoflakes are fabricated by spray coating GeSe nanoflakes dispersion in 2-propanol obtained through liquid-phase exfoliation of synthesized orthorhombic (Pnma) GeSe bulk crystals. The PEC properties of the GeSe nanoflakes are used to design PEC-type photodetectors, reaching a responsivity of up to 0.32 AW-1 (external quantum efficiency of 86.3%) under 455 nm excitation wavelength in acidic electrolyte. The obtained performances are superior to those of several self-powered and low-voltage solution-processed photodetectors, approaching that of self-powered commercial UV-Vis photodetectors. The obtained results inspire the use of 2D GeSe in proof-of-concept water photoelectrolysis cells.
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Affiliation(s)
- Gabriele Bianca
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Marilena I. Zappia
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | | | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Michele Serri
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Leyla Najafi
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Reinier Oropesa-Nuñez
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Materials Science and Engineering, Uppsala
University, Box 534, 75121 Uppsala, Sweden
| | - Beatriz Martín-García
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- CIC
nanoGUNE, 20018 Donostia-San Sebastian, Spain
| | - Tomáš Hartman
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Luca Leoncino
- Electron
Microscopy Facility, Istituto Italiano di
Tecnologia, via Morego 30, 16163 Genova, Italy
| | - David Sedmidubský
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Vittorio Pellegrini
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Gennaro Chiarello
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | - Francesco Bonaccorso
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
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32
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Zhang B, Li A, Han G, Zhang Z, Peng K, Gong X, Zhou X, Han X. Dynamic Epitaxial Crystallization of SnSe 2 on the Oxidized SnSe Surface and Its Atomistic Mechanisms. ACS APPLIED MATERIALS & INTERFACES 2020; 12. [PMID: 32412229 DOI: 10.1021/acsami.0c05029] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Surface oxidation of SnSe sharply reduces its thermoelectric properties though the bulk single-crystalline materials of SnSe claim the record high zT values. Investigation on the oxidation behaviors of SnSe together with the subsequent phase transition and element migration is fundamentally important to maintaining the ultrahigh zT values, with a potential for further improvement. In this work, we disclose the dynamic epitaxial crystallization of SnSe2 on the amorphous surface of partially oxidized SnSe crystals and the corresponding atomistic mechanisms via transmission electron microscopy (TEM). It is revealed that the thermally annealed amorphous surface crystallized to SnO2 and SnSe2 in the outermost and secondary layers, respectively, forming distinctive SnSe/SnSe2/SnO2 multilayer heterostructures with specific orientation relationships between the two selenides. By means of in situ scanning TEM (STEM), the dynamic epitaxial crystallization process of SnSe2 was revealed when the oxidized SnSe surface was subjected to electron beam irradiation. Through the atomic-scale characterization and modeling analysis, we find that the exposed dangling Se diatoms on the SnSe surface serve as nucleation sites for lateral epitaxial crystallization of SnSe2. The same valence and similar coordination configuration of Se atoms in these two phases are supposed to facilitate the sharing of Se atoms, with lattice distortions in the SnSe2/SnSe interface. These findings are valuable for understanding the surface oxidation behavior of SnSe and revealing the interface structures of SnSe2/SnSe heterojunctions and also offering new routes for SnSe-related multilayer or heterostructure system design.
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Affiliation(s)
- Bin Zhang
- Analytical and Testing Center of Chongqing University, Chongqing 401331, P. R. China
| | - Ang Li
- Beijing Key Laboratory and Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, P. R. China
| | - Guang Han
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, P. R. China
| | - Zhenhua Zhang
- Department of Materials and Environmental Engineering, Institute for Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
| | - Kunling Peng
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- College of Physics and Center for Quantum Materials and Devices, Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 401331, P. R. China
| | - Xiangnan Gong
- Analytical and Testing Center of Chongqing University, Chongqing 401331, P. R. China
| | - Xiaoyuan Zhou
- Analytical and Testing Center of Chongqing University, Chongqing 401331, P. R. China
- College of Physics and Center for Quantum Materials and Devices, Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 401331, P. R. China
| | - Xiaodong Han
- Beijing Key Laboratory and Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, P. R. China
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33
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Li H, Liang J, Xu P, Luo J, Liu F. Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors. RSC Adv 2020; 10:20801-20808. [PMID: 35517741 PMCID: PMC9054299 DOI: 10.1039/d0ra03279d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2020] [Accepted: 05/22/2020] [Indexed: 11/21/2022] Open
Abstract
The two-dimensional (2D) vertical van der Waals (vdW) stacked homojunction is an advantageous configuration for fast low-power tunneling field effect transistors (TFETs). We simulate the device performance of the sub-10 nm vertical SnSe homojunction TFETs with ab initio quantum transport calculations. The vertically stacked device configuration has an effect of decreasing leakage current when compared with its planar counterpart due to the interrupted carrier transport path by the broken connection. A subthreshold swing over four decades (SSave_4 dec) of 44.2–45.8 mV dec−1 and a drain current at SS = 60 mV dec−1 (I60) of 5–7 μA μm−1 are obtained for the optimal vertical SnSe homojunction TFET with Lg = 10 nm at a supply voltage of 0.5–0.74 V. In terms of the device's main figures of merit (i.e., on-state current, intrinsic delay time, and power delay product), the vertical SnSe TFETs and NCTFETs outperform the 2022 and 2028 targets of the International Technology Roadmap for Semiconductors requirements for low-power application (2013 version), respectively. The vertical SnSe homojunction TFETs and NCTFETs are potential candidates for fast low-power application.![]()
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Affiliation(s)
- Hong Li
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jiakun Liang
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Peipei Xu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jing Luo
- Beijing Research Institute of Automation for Machinery Industry Beijing 100120 P. R. China
| | - Fengbin Liu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
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Higashitarumizu N, Kawamoto H, Lee CJ, Lin BH, Chu FH, Yonemori I, Nishimura T, Wakabayashi K, Chang WH, Nagashio K. Purely in-plane ferroelectricity in monolayer SnS at room temperature. Nat Commun 2020; 11:2428. [PMID: 32415121 PMCID: PMC7229038 DOI: 10.1038/s41467-020-16291-9] [Citation(s) in RCA: 96] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 04/27/2020] [Indexed: 12/23/2022] Open
Abstract
2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics. Out-of-plane ferroelectricity is usually unstable in the two dimensional limit due to the presence of the depolarization field. Here, the authors successfully circumvent this issue by growing µm-sized SnS monolayers that exhibit in-plane ferroelectricity that is stable at room temperature.
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Affiliation(s)
- Naoki Higashitarumizu
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
| | - Hayami Kawamoto
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
| | - Chien-Ju Lee
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Bo-Han Lin
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Fu-Hsien Chu
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Itsuki Yonemori
- Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo, 669-1337, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
| | - Katsunori Wakabayashi
- Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo, 669-1337, Japan
| | - Wen-Hao Chang
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan.,Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan.
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35
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Xu P, Liang J, Li H, Liu F, Tie J, Jiao Z, Luo J, Lu J. Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors. RSC Adv 2020; 10:16071-16078. [PMID: 35493676 PMCID: PMC9052893 DOI: 10.1039/d0ra02265a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2020] [Accepted: 03/26/2020] [Indexed: 11/21/2022] Open
Abstract
Exploring the device performance limits is meaningful for guiding practical device fabrication. We propose archetype tunneling field effect transistors (TFETs) with negative capacitance (NC) and use the rigorous ab initio quantum transport simulation to explore the device performance limits of the TFETs based on monolayer (ML) GeSe and GeTe along with their NC counterparts. With the ferroelectric dielectric acting as a negative capacitance material, the device performances of both the ML GeSe and GeTe NCTFETs outperform their TFET counterparts, particularly for the on-state current (Ion). Ion of the optimal ML GeSe and GeTe TFETs fulfills the demands of the International Technology Roadmap for Semiconductors (ITRS 2015 version) for low power (LP) and high performance (HP) devices, at the “6/5” node range, while with the aid of 80 nm and 50 nm thickness of ferroelectric SrBi2Nb2O9, both their NC counterparts extend the fulfillments at the “4/3” node range. The ML GeSe and GeTe NCTFETs fulfill the ITRS low power and high performance devices, respectively, at the “4/3” node range.![]()
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Affiliation(s)
- Peipei Xu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jiakun Liang
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Hong Li
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Fengbin Liu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jun Tie
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Zhiwei Jiao
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jing Luo
- Beijing Research Institute of Automation for Machinery Industry Beijing P. R. China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University Beijing 100871 P. R. China .,Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
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36
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Li Y, Liu J, Zhao X, Yuan X, Hu G, Yuan X, Ren J. Strain forces tuned the electronic and optical properties in GaTe/MoS2 van der Waals heterostructures. RSC Adv 2020; 10:25136-25142. [PMID: 35517469 PMCID: PMC9055235 DOI: 10.1039/d0ra04643d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Accepted: 06/25/2020] [Indexed: 11/21/2022] Open
Abstract
We report a novel GaTe/MoS2 vdWH and theoretically investigate the electronic and optical properties based on first-principles calculations.
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Affiliation(s)
- Yuan Li
- School of Physics and Electronics
- Shandong Normal University
- Jinan
- China
| | - Jijian Liu
- School of Physics and Electronics
- Shandong Normal University
- Jinan
- China
| | - Xiuwen Zhao
- School of Physics and Electronics
- Shandong Normal University
- Jinan
- China
| | | | - Guichao Hu
- School of Physics and Electronics
- Shandong Normal University
- Jinan
- China
| | - Xiaobo Yuan
- School of Physics and Electronics
- Shandong Normal University
- Jinan
- China
| | - Junfeng Ren
- School of Physics and Electronics
- Shandong Normal University
- Jinan
- China
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37
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Guan F, Li L, Cui Y, Wang T, Li S, Li L, Zhang J, Wang J. Oleic acid-induced, controllable surface oxidation to enhance the photoresponse performance of Sb 2Se 3 nanorods. CrystEngComm 2020. [DOI: 10.1039/d0ce00810a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
The surface oxidation level of Sb2Se3 nanorods is tunable by varying the volume ratio of oleic acid during the synthesis and a modest oxidation level (20–30%) is found to be favorable for the optoelectronic properties of Sb2Se3.
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Affiliation(s)
- Fan Guan
- School of Materials Science & Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Linjie Li
- School of Materials Science & Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Yusong Cui
- School of Materials Science & Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Tingting Wang
- School of Materials Science & Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Shaopeng Li
- School of Materials Science & Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Longhua Li
- School of Chemistry & Chemical Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Junhao Zhang
- School of Environmental and Chemical Engineering
- Jiangsu University of Science and Technology
- Zhenjiang 212003
- P. R. China
| | - Junli Wang
- School of Materials Science & Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
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38
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Li H, Xu P, Lu J. Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides. NANOSCALE 2019; 11:23392-23401. [PMID: 31793968 DOI: 10.1039/c9nr07590a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The development of air-stable channels with a high on-state current (Ion) is in high demand for the feasible application of TFETs. Monolayer group IV mono-chalcogenides (i.e., GeS, GeSe, SnS, and SnSe), as emerging air-stable atomic-thin semiconductors, are potential channels for sub-10 nm tunneling field-effect transistors due to their high carrier mobility and anisotropic electronic properties. Herein, we investigated the performances of sub-10 nm monolayer (ML) group IV mono-chalcogenide TFETs using ab initio quantum transport simulation. The ML GeSe TFET exhibited the best performance with regards to both high Ion and low leakage current (Ileak) among the four devices, followed by the ML SnSe TFET with a high Ion. The Ion of the optimal ML GeSe TFET with a physical gate length of Lg = 10 nm surpasses the International Technology Roadmap for Semiconductors (ITRS, 2013 Edition) requirements for high-performance (HP) and low-power (LP) devices, simultaneously, and that of the ML SnSe TFET with Lg = 10 nm surpasses the requirement of ITRS HP devices. In combination with our former works, we suggest an Eg of 0.77-1.19 eV and of 0.11-0.15m0 to search for competitive 2D channels with a high Ion for HP application in TFET devices with a planar homogeneous p-i-n architecture.
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Affiliation(s)
- Hong Li
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Peipei Xu
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China and Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China and Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, P. R. China.
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39
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Sutter E, Zhang B, Sun M, Sutter P. Few-Layer to Multilayer Germanium(II) Sulfide: Synthesis, Structure, Stability, and Optoelectronics. ACS NANO 2019; 13:9352-9362. [PMID: 31305983 DOI: 10.1021/acsnano.9b03986] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Among 2D/layered semiconductors, group IV monochalcogenides such as SnS(e) and GeS(e) have attracted attention as phosphorene/black phosphorus analogues with anisotropic structures and predicted unusual properties. In contrast to SnS, for which bottom-up synthesis has been reported, few-layer GeS has been realized primarily via exfoliation from bulk crystals. Here, we report the synthesis of large (up to >20 μm), faceted single crystalline GeS flakes with anisotropic properties using a vapor transport process. In situ electron microscopy is used to identify the thermal stability and sublimation pathways, and demonstrates that the GeS flakes are self-encapsulated in a thin, sulfur-rich amorphous GeSx shell during growth. The shell provides exceptional chemical stability to the layered GeS core. In contrast to exfoliated GeS, which rapidly degrades during exposure to air, the synthesized GeS-GeSx core-shell structures show no signs of chemical attack and remain unchanged in air for extended time periods. Measurements of the optoelectronic properties by photoluminescence spectroscopy show a tunable bandgap due to out-of-plane quantum confinement in flakes with thickness below 100 nm. Cathodoluminescence (CL) spectroscopy with nanoscale excitation provides evidence for interfacial charge transfer due to a type II heterojunction between the crystalline core and amorphous shell. Measurements by locally excited CL yield a minority carrier (electron) diffusion length in the p-type GeS core ldiff = 0.27 μm, on par with diffusion lengths in the highest-quality layered chalcogenide semiconductors.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Bo Zhang
- Department of Mechanical and Materials Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Muhua Sun
- Department of Mechanical and Materials Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Peter Sutter
- Department of Electrical and Computer Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
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40
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Wu Q, Xu WW, Lin D, Wang J, Zeng XC. Two-Dimensional Gold Sulfide Monolayers with Direct Band Gap and Ultrahigh Electron Mobility. J Phys Chem Lett 2019; 10:3773-3778. [PMID: 31244267 DOI: 10.1021/acs.jpclett.9b01312] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
It remains a pressing task to search for new two-dimensional (2D) semiconducting materials for future-generation electronic applications. By using density functional theory computations and global structure prediction methods, we demonstrate two new gold sulfide monolayers (2D Au2S and AuS), both exhibiting excellent electronic properties and high stabilities. All the gold sulfide monolayers are semiconductors with band gaps in the range 1.0-3.6 eV. In particular, the α-Au2S monolayer is predicted to possess a direct band gap of 1.0 eV and extremely high electron and hole mobilities of 8.45 × 104 and 0.40 × 104 cm2 V-1 S-1, respectively. The phonon dispersion calculations and ab initio molecular dynamics simulations indicate that the gold sulfide monolayers exhibit robust dynamical and thermal stabilities. Moreover, the α-Au2S monolayer appears to show strong oxidation resistibility. The novel electronic properties, coupled with structural and chemical stabilities, endow the new gold sulfide monolayers to be highly promising for future applications in nanoelectronics.
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Affiliation(s)
- Qisheng Wu
- School of Physics , Southeast University , Nanjing 211189 , P. R. China
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Wen Wu Xu
- School of Physical Science and Technology , Ningbo University , Ningbo 315211 , P. R. China
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Dongdong Lin
- School of Physical Science and Technology , Ningbo University , Ningbo 315211 , P. R. China
| | - Jinlan Wang
- School of Physics , Southeast University , Nanjing 211189 , P. R. China
| | - Xiao Cheng Zeng
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
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41
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Hu Z, Ding Y, Hu X, Zhou W, Yu X, Zhang S. Recent progress in 2D group IV-IV monochalcogenides: synthesis, properties and applications. NANOTECHNOLOGY 2019; 30:252001. [PMID: 30776787 DOI: 10.1088/1361-6528/ab07d9] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Coordination-related, 2D structural phase transitions are a fascinating facet of 2D materials with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic properties, have received considerable attention. The 2D group IV-IV monochalcogenides (i.e. GeS, GeSe, SnS and SnSe) like black phosphorous possess puckered layered orthorhombic structure. The 2D group IV-IV monochalcogenides with advantages of earth-abundance, less toxicity, environmental compatibility and chemical stability, can be widely used in optoelectronics, piezoelectrics, photodetectors, sensors, Li-batteries and thermoelectrics. In this review, we summarized recent research progress in theory and experiment, which studies the fundamental properties, applications and fabrication of 2D group IV-IV monochalcogenides and their new phases, and brings new perspectives and challenges for the future of this emerging field.
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Affiliation(s)
- Ziyu Hu
- College of Science, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
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43
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Ma D, Zhao J, Wang R, Xing C, Li Z, Huang W, Jiang X, Guo Z, Luo Z, Li Y, Li J, Luo S, Zhang Y, Zhang H. Ultrathin GeSe Nanosheets: From Systematic Synthesis to Studies of Carrier Dynamics and Applications for a High-Performance UV-Vis Photodetector. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4278-4287. [PMID: 30623664 DOI: 10.1021/acsami.8b19836] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Owing to the attractive energy band properties, a black phosphorus (BP)-analogue semiconductor, germanium selenide (GeSe), shows a promising potential applied for optoelectronic devices. Herein, ultrathin GeSe nanosheets were systematically prepared via a facile liquid-phase exfoliation approach, with controllable nanoscale thickness. Different from BP, ultrathin GeSe nanosheets exhibit good stability under both liquid and ambient conditions. Besides, its ultrafast carrier dynamics was probed by transient absorption spectroscopy. We showed that the GeSe nanosheet-based photodetector exhibits excellent photoresponse behaviors ranging from ultraviolet (UV) to the visible regime, with high responsivity and low dark current. Furthermore, the detective ability of such a device can be effectively modulated by varying the applied bias potential, light intensity, and concentration of the electrolyte. Generally, our present contribution could not only supply fundamental knowledge of a GeSe nanosheet-based photoelectrochemical (PEC)-type device, but also offer guidance to extend other possible semiconductor materials in the application of the PEC-type photodetector.
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Affiliation(s)
- Dingtao Ma
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Jinlai Zhao
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Rui Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
- Department of Electronic Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Chenyang Xing
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Zhongjun Li
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Weichun Huang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Xiantao Jiang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Zhinan Guo
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Zhengqian Luo
- Department of Electronic Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Yu Li
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Jianqing Li
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Shaojuan Luo
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Yupeng Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
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Kistanov AA, Khadiullin SK, Dmitriev SV, Korznikova EA. A First-Principles Study on the Adsorption of Small Molecules on Arsenene: Comparison of Oxidation Kinetics in Arsenene, Antimonene, Phosphorene, and InSe. Chemphyschem 2019; 20:575-580. [DOI: 10.1002/cphc.201801070] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2018] [Revised: 12/14/2018] [Indexed: 11/07/2022]
Affiliation(s)
- Andrey A. Kistanov
- Institute for Metals Superplasticity Problems; Russian Academy of Sciences; 39, Stepana Khalturina st. 450001 Ufa Russia
| | | | - Sergey V. Dmitriev
- Institute for Metals Superplasticity Problems; Russian Academy of Sciences; 39, Stepana Khalturina st. 450001 Ufa Russia
- National Research Tomsk State University; 36 Prospect Lenina Tomsk 634050 Russia
| | - Elena A. Korznikova
- Institute for Metals Superplasticity Problems; Russian Academy of Sciences; 39, Stepana Khalturina st. 450001 Ufa Russia
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45
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Yu T, Zhao Z, Sun Y, Bergara A, Lin J, Zhang S, Xu H, Zhang L, Yang G, Liu Y. Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility. J Am Chem Soc 2019; 141:1599-1605. [DOI: 10.1021/jacs.8b11350] [Citation(s) in RCA: 103] [Impact Index Per Article: 20.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Tong Yu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Ziyuan Zhao
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yuanhui Sun
- College of Materials Science and Engineering and Key Laboratory of Automobile Materials of MOE, Jilin University, Changchun 130012, China
| | - Aitor Bergara
- Departmento de Física de la Materia Condensada, Universidad del País Vasco, UPV/EHU, 48080 Bilbao, Spain
- Donostia International Physics Center (DIPC), 20018 Donostia, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
| | - Jianyan Lin
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Shoutao Zhang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Haiyang Xu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Lijun Zhang
- College of Materials Science and Engineering and Key Laboratory of Automobile Materials of MOE, Jilin University, Changchun 130012, China
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yichun Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
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46
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Guo Y, Wu Q, Li Y, Lu N, Mao K, Bai Y, Zhao J, Wang J, Zeng XC. Copper(i) sulfide: a two-dimensional semiconductor with superior oxidation resistance and high carrier mobility. NANOSCALE HORIZONS 2019; 4:223-230. [PMID: 32254160 DOI: 10.1039/c8nh00216a] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) semiconductors with suitable direct band gaps, high carrier mobility, and excellent open-air stability are especially desirable for material applications. Herein, we show theoretical evidence of a new phase of a copper(i) sulfide (Cu2S) monolayer, denoted δ-Cu2S, with both novel electronic properties and superior oxidation resistance. We find that both monolayer and bilayer δ-Cu2S have much lower formation energy than the known β-Cu2S phase. Given that β-Cu2S sheets have been recently synthesized in the laboratory (Adv. Mater.2016, 28, 8271), the higher stability of δ-Cu2S than that of β-Cu2S sheets suggests a high possibility of experimental realization of δ-Cu2S. Stability analysis indicates that δ-Cu2S is dynamically and thermally stable. Notably, δ-Cu2S exhibits superior oxidation resistance, due to the high activation energy of 1.98 eV for the chemisorption of O2 on δ-Cu2S. On its electronic properties, δ-Cu2S is a semiconductor with a modest direct band gap (1.26 eV) and an ultrahigh electron mobility of up to 6880 cm2 V-1 s-1, about 27 times that (246 cm2 V-1 s-1) of the β-Cu2S bilayer. The marked difference between the electron and hole mobilities of δ-Cu2S suggests easy separation of electrons and holes for solar energy conversion. Combination of these novel properties makes δ-Cu2S a promising 2D material for future applications in electronics and optoelectronics with high thermal and chemical stability.
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Affiliation(s)
- Yu Guo
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, Liaoning 116024, China.
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47
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Higashitarumizu N, Kawamoto H, Nakamura M, Shimamura K, Ohashi N, Ueno K, Nagashio K. Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation. NANOSCALE 2018; 10:22474-22483. [PMID: 30480284 DOI: 10.1039/c8nr06390g] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Remarkable optical/electrical features are expected in two-dimensional group-IV monochalcogenides (MXs; M = Sn/Ge and X = S/Se) with a uniquely distorted layered structure. The lone pair electrons in the group-IV atoms are the origin of this structural distortion, while they also cause a strong interlayer force and high chemical reactivity. The fabrication of chemically stable few-to-monolayer MX has been a significant challenge. We have observed that, once the SnS surface is oxidized, the SnOx top layer works as a passivation layer for the SnS layer underneath. In this work, the SnOx/SnS hetero-structure is studied structurally, optically, and electrically. When tape-exfoliated bulk SnS is oxygen-annealed under a reduced pressure at 10 Pa, surface oxidation and SnS sublimation proceed simultaneously, resulting in a monolayer-thick SnS layer with the SnOx passivation layer. The field-effect transistor of nine-layer SnS prepared via mechanical exfoliation exhibits a p-type characteristic because of intrinsic Sn vacancies, whereas ambipolar behavior is observed for the monolayer-thick SnS obtained via oxygen annealing probably owing to the additional n-type doping by S vacancies. This work on monolayer-thick SnS fabrication can be applied to other unstable lone pair analogues and can facilitate future research on MXs.
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Affiliation(s)
- Naoki Higashitarumizu
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
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Gómez-Pérez J, Barna B, Tóth IY, Kónya Z, Kukovecz Á. Quantitative Tracking of the Oxidation of Black Phosphorus in the Few-Layer Regime. ACS OMEGA 2018; 3:12482-12488. [PMID: 31457979 PMCID: PMC6644649 DOI: 10.1021/acsomega.8b01989] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2018] [Accepted: 09/20/2018] [Indexed: 11/28/2022]
Abstract
Previous theoretical reports have described the oxidation of few-layer black phosphorus and its effects on the electronic properties. Theoretically, native oxide layers bring opportunities for band gap engineering, but the detection of the different types of oxides is still a challenge at the experimental level. In this work, we uncover a correlation between thermal processes and Raman shift for the Ag 1, B2g, and Ag 2 vibrational modes. The thermal expansion coefficients (temperature range, 290-485 K) for the Ag 1, B2g, and Ag 2 were -0.015, -0.027, and -0.028 cm-1 K-1, respectively. Differential scanning calorimetry analysis shows an endothermic process centered at 528 K, and it was related with a mass increase according to thermogravimetric analysis. Raman shift temperature dependence was correlated to theoretical lattice thermal expansion, and a significant deviation was detected in the stacking direction at 500 K.
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Affiliation(s)
- Juan Gómez-Pérez
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla
tér 1, H-6720 Szeged, Hungary
| | - Balázs Barna
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla
tér 1, H-6720 Szeged, Hungary
| | - Ildikó Y. Tóth
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla
tér 1, H-6720 Szeged, Hungary
- SZTE “Lendület” Porous Nanocomposites Research Group, Rerrich Béla tér 1, H-6720 Szeged, Hungary
| | - Zoltán Kónya
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla
tér 1, H-6720 Szeged, Hungary
- MTA-SZTE Reaction Kinetics and Surface Chemistry Research Group, Rerrich Béla tér 1, H-6720 Szeged, Hungary
| | - Ákos Kukovecz
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla
tér 1, H-6720 Szeged, Hungary
- SZTE “Lendület” Porous Nanocomposites Research Group, Rerrich Béla tér 1, H-6720 Szeged, Hungary
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Barraza-Lopez S, Kaloni TP. Water Splits To Degrade Two-Dimensional Group-IV Monochalcogenides in Nanoseconds. ACS CENTRAL SCIENCE 2018; 4:1436-1446. [PMID: 30410982 PMCID: PMC6202654 DOI: 10.1021/acscentsci.8b00589] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2018] [Indexed: 05/11/2023]
Abstract
The experimental exfoliation of layered group-IV monochalcogenides-semiconductors isostructural to black phosphorus-using processes similar to those followed in the production of graphene or phosphorene has turned out unsuccessful thus far, as if the chemical degradation observed in black phosphorus was aggravated in these monochalcogenides. Here, we document a facile dissociation of water by these materials within 10 ns from room-temperature Car-Parrinello molecular dynamics calculations under standard temperature and pressure conditions. These results suggest that humidity must be fully eradicated to exfoliate monolayers successfully, for instance, by placing samples in a hydrophobic solution during mechanical exfoliation. From another materials perspective, these two-dimensional materials that create individual hydrogen ions out of water without illumination may become relevant for applications in hydrogen production and storage.
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Affiliation(s)
- Salvador Barraza-Lopez
- Department of Physics and Institute for Nanoscale Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States
- E-mail:
| | - Thaneshwor P. Kaloni
- Department of Physics and Institute for Nanoscale Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States
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Lv X, Wei W, Yang H, Li J, Huang B, Dai Y. Group IV Monochalcogenides MX (M=Ge, Sn; X=S, Se) as Chemical Anchors of Polysulfides for Lithium-Sulfur Batteries. Chemistry 2018; 24:11193-11199. [PMID: 29797539 DOI: 10.1002/chem.201801925] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2018] [Indexed: 11/07/2022]
Abstract
Although rechargeable lithium-sulfur batteries are considered as advanced energy systems, their practical implementation is impeded by many factors, in particular the rapid capacity fade and low Coulomb efficiency caused by the shuttle effect. To overcome this problem for achieving longer cycle life and higher rate performance, anchoring materials for lithium polysulfides are highly desirable. In this work, for the first time, we report phosphorene-like MX (M=Ge, Sn; X=S, Se) monolayers as promising anchoring materials to restrain the lithium polysulfides shuttling. Our study provides fundamental selection criteria for the effective suppression of the polysulfides shuttling. Adsorption calculations reveal that polysulfide capture by the MX is through chemisorption with a suitable range of adsorption energies. Morever, we show that excellent surface diffusion of Li and polysulfides endow a fast charge/discharge rate for lithium-sulfur batteries. Graphene with desirable electronic properties is constructed to improve the electrical conductivity in the new graphene@MX heterostructures. Based on the strong anchoring ability, improved rate capability, and enhanced conductivity, MX-based composites hold great promise as an anchoring material for high-energy lithium-sulfur batteries.
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Affiliation(s)
- Xingshuai Lv
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, P.R. China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, P.R. China
| | - Hongchao Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, P.R. China
| | - Jinjin Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, P.R. China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, P.R. China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, P.R. China
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