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Dallaire N, Boileau NT, Myers I, Brixi S, Ourabi M, Raluchukwu E, Cranston R, Lamontagne HR, King B, Ronnasi B, Melville OA, Manion JG, Lessard BH. High Throughput Characterization of Organic Thin Film Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406105. [PMID: 39149766 DOI: 10.1002/adma.202406105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Revised: 07/29/2024] [Indexed: 08/17/2024]
Abstract
Automation is vital to accelerating research. In recent years, the application of self-driving labs to materials discovery and device optimization has highlighted many benefits and challenges inherent to these new technologies. Successful automated workflows offer tangible benefits to fundamental science and industrial scale-up by significantly increasing productivity and reproducibility all while enabling entirely new types of experiments. However, it's implemtation is often time-consuming and cost-prohibitive and necessitates establishing multidisciplinary teams that bring together domain-specific knowledge with specific skillsets in computer science and engineering. This perspective article provides a comprehensive overview of how the research group has adopted "hybrid automation" over the last 8 years by using simple automatic electrical testers (autotesters) as a tool to increase productivity and enhance reproducibility in organic thin film transistor (OTFT) research. From wearable and stretchable electronics to next-generation sensors and displays, OTFTs have the potential to be a key technology that will enable new applications from health to aerospace. The combination of materials chemistry, device manufacturing, thin film characterization and electrical engineering makes OTFT research challenging due to the large parameter space created by both diverse material roles and device architectures. Consequently, this research stands to benefit enormously from automation. By leveraging the multidisciplinary team and taking a user-centered design approach in the design and continued improvement of the autotesters, the group has meaningfully increased productivity, explored research avenues impossible with traditional workflows, and developed as scientists and engineers capable of effectively designing and leveraging automation to build the future of their fields to encourage this approach, the files for replicating the infrastructure are included, and questions and potential collaborations are welcomed.
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Affiliation(s)
- Nicholas Dallaire
- School of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward Ave., Ottawa, ON, K1N 6N5, Canada
| | - Nicholas T Boileau
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Ian Myers
- University of Ottawa Electronics shop, University of Ottawa, 150 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Samantha Brixi
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - May Ourabi
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Ewenike Raluchukwu
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Rosemary Cranston
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Halynne R Lamontagne
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
- Department of Chemistry and Biomolecular Sciences, University of Ottawa, 150 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Benjamin King
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Bahar Ronnasi
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Owen A Melville
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
- Acceleration Consortium, University of Toronto, 80 St George St, Toronto, ON, M5S 3H6, Canada
| | - Joseph G Manion
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
| | - Benoît H Lessard
- School of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward Ave., Ottawa, ON, K1N 6N5, Canada
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, K1N 6N5, Canada
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2
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Zhang J, Wang G, Chai Z, Li Z, Yuan S, Wang Y, Ding Y, Sun T, Wang T, Zhao D, Busnaina AA, Ren TL, Lu X. All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process. ACS NANO 2024. [PMID: 39001855 DOI: 10.1021/acsnano.4c04936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
Solution-based processes have received considerable attention in the fabrication of electronics and sensors owing to their merits of being low-cost, vacuum-free, and simple in equipment. However, the current solution-based processes either lack patterning capability or have low resolution (tens of micrometers) and low pattern fidelity in terms of line edge roughness (LER, several micrometers). Here, we present a surface energy-directed assembly (SEDA) process to fabricate metal oxide patterns with up to 2 orders of magnitude improvement in resolution (800 nm) and LER (16 nm). Experiment results show that high pattern fidelity can be achieved only at low relative humidities of below 30%. The reason for this phenomenon lies in negligible water condensation on the solution droplet. Employing the SEDA process, all-solution-processed metal oxide thin film transistors (TFTs) are fabricated by using indium oxide as channel layers, indium tin oxide as source/drain electrodes and gate electrodes, and aluminum oxide as gate dielectrics. TFT-based logic gate circuits, including NOT, NOR, NAND, and AND are fabricated as well, demonstrating the applicability of the SEDA process in fabricating large area functional electronics.
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Affiliation(s)
- Jingwei Zhang
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Guangji Wang
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Zhimin Chai
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Zetong Li
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Siqing Yuan
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Yihuan Wang
- Weiyang College, Tsinghua University, Beijing 100084, China
| | - Yi Ding
- Weiyang College, Tsinghua University, Beijing 100084, China
| | - Taohan Sun
- Weiyang College, Tsinghua University, Beijing 100084, China
| | - Tongqing Wang
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Dewen Zhao
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Ahmed A Busnaina
- NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing (CHN), Northeastern University, Boston, Massachusetts 02115, United States
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research on Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Xinchun Lu
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
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Na JH, Park JH, Park W, Feng J, Eun JS, Lee J, Lee SH, Jang J, Kang IM, Kim DK, Bae JH. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:466. [PMID: 38470795 DOI: 10.3390/nano14050466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 02/04/2024] [Accepted: 02/04/2024] [Indexed: 03/14/2024]
Abstract
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.
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Affiliation(s)
- Jeong-Hyeon Na
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Jun-Hyeong Park
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Won Park
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Junhao Feng
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Jun-Su Eun
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Jinuk Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Sin-Hyung Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Jaewon Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - In Man Kang
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Do-Kyung Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Jin-Hyuk Bae
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
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4
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Xu W, Zhang Z, Zhou C, Zhu D. Universal Way to Enhance Solution-Processed High-κ Oxide Dielectrics Performance by Sulfate Incorporation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8960-8973. [PMID: 38329839 DOI: 10.1021/acsami.3c13977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Vacuum-free, solution-processable high-κ-oxide dielectrics are considered to be a key element for emerging low-cost flexible electronics. However, they usually suffer from low breakdown strength and frequency-dependent capacitance, which limit their broader applications. Here, we report a universal way to improve solution-based high-κ oxide dielectric properties (e.g., Al2O3, ZrO2, Ga2O3, Sc2O3, Ho2O3, and Sm2O3) by sulfate incorporation. In-depth characterization shows that sulfate incorporation could reduce hydrogen and oxygen vacancy-related defects in high-κ oxides, thereby improving the dielectric performance. The optimized S-doped high-κ oxides show smooth surface (rms < 0.20 nm), low leakage current (∼10-7 A/cm2@4 MV/cm), excellent dielectric breakdown strength (>10 MV/cm), and stable capacitance-frequency characteristics. Besides, oxide thin-film transistors based on these high-κ dielectrics exhibit excellent performance (e.g., mobility >20 cm2 V-1 s-1, on/off ratio of ∼107, threshold swing of ∼0.14 V dec-1, threshold voltage of ∼0 V, and hysteresis of ∼0.02 V). Thus, this work provides a general approach for the development of high-quality solution-based high-κ oxides for transistor circuitry.
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Affiliation(s)
- Wangying Xu
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Zihao Zhang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Changjie Zhou
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Deliang Zhu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
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5
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Yuvaraja S, Khandelwal V, Krishna S, Lu Y, Liu Z, Kumar M, Tang X, Maciel García GI, Chettri D, Liao CH, Li X. Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga 2O 3/NiO Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6088-6097. [PMID: 38278516 PMCID: PMC10859899 DOI: 10.1021/acsami.3c15778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2023] [Revised: 11/20/2023] [Accepted: 12/04/2023] [Indexed: 01/28/2024]
Abstract
Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga2O3 power devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers have introduced Ga2O3-based NMOS and pseudo-CMOS circuits for integration, but these circuits may either consume more power or increase the design complexity. Hence, this article proposes Ga2O3-based CMOS realized using heterogeneous 3D-stacked bilayer ambipolar transistors. These ambipolar transistors consist of HfO2/NiO/Ga2O3/NiO/HfO2 heterostructures that are wrapped around by the Ti/Au gate electrode, resulting in record high electron and hole current on/off ratios of 109 and 107. The threshold voltage, subthreshold swing, and current density measured from 100 ambipolar devices (across 5 batches) are around -7.99 ± 0.92 V (p-channel) and 7.81 ± 0.81 V (n-channel), 0.59 ± 0.07 V/dec (p-channel) and 0.61 ± 0.06 V/dec (n-channel), and 0.99 ± 0.26 mA/mm (p-channel) and 58.23 ± 12.99 mA/mm (n-channel), respectively. All the 100 ambipolar devices showed decent long-term stability over a period of 200 days, exhibiting reliable electrical performance. The threshold voltage shift (ΔVTH) after negative bias stressing for a period of 3500 s is around 11.52 V (p-channel) and 10.21 V (n-channel), respectively. Notably, the n-channels exhibit ∼2 orders higher on/off ratio than the best Ga2O3 unipolar transistors at 300 °C. Moreover, the polarities of ambipolar transistors are reconfigurable into p- or n-MOS, which are integrated to demonstrate CMOS inverter, NOR, and NAND logic gates. The switching periods from "0" to "1" and from "1" to "0" of NOR are 0.12 and 0.17 μs, and those of NAND are 0.16 and 0.13 μs. This work lays the foundation of oxide-semiconductor-based CMOS for future integrated electronics.
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Affiliation(s)
- Saravanan Yuvaraja
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Vishal Khandelwal
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Shibin Krishna
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Yi Lu
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Zhiyuan Liu
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Mritunjay Kumar
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Xiao Tang
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Glen Isaac Maciel García
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Dhanu Chettri
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Che-Hao Liao
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Xiaohang Li
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
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6
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Nakamura S, Okubo K, Nishii Y, Hirano K, Tohnai N, Miura M. Stimuli-Responsive Properties on a Bisbenzofuropyrazine Core: Mechanochromism and Concentration-Controlled Vapochromism. Chemistry 2023; 29:e202302605. [PMID: 37694960 DOI: 10.1002/chem.202302605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 09/07/2023] [Accepted: 09/11/2023] [Indexed: 09/12/2023]
Abstract
Stimulus-responsive organic materials with luminescence switching properties have attracted considerable attention for their practical applications in sensing, security, and display devices. In this paper, bent-type bisbenzofuropyrazine derivatives, Bent-H and Bent-sBu, with good solubilities were synthesized, and their physical and optical properties were investigated in detail. Bent-H gave three crystalline polymorphs, and they showed different luminescence properties depending on their crystal packing structures. In addition, Bent-H exhibited mechanochromic luminescence in spite of its rigid skeleton. Bent-sBu exhibited unique concentration-dependent vapochromic luminescence. Ground Bent-sBu was converted to blue-emissive, green-emissive, and green-emissive high-viscosity solution states at low, moderate, and high concentrations of CHCl3 vapor, respectively. This finding represents a concentration-dependent multi-phase transition with an organic solvent, which is of potent interest for application in sensing systems.
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Affiliation(s)
- Shotaro Nakamura
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
| | - Kohei Okubo
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
| | - Yuji Nishii
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
| | - Koji Hirano
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
- Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University, Suita, Osaka, 565-0871, Japan
| | - Norimitsu Tohnai
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
| | - Masahiro Miura
- Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University, Suita, Osaka, 565-0871, Japan
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7
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Xu W, Peng T, Zhou C, Zhu D. Boronization: A General Strategy for Rare Earth Oxides with Enhanced High-κ Gate Dielectric Performance. ACS APPLIED MATERIALS & INTERFACES 2023; 15:53725-53737. [PMID: 37990903 DOI: 10.1021/acsami.3c12891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
Rare earth oxides (REOs) can be used as high-κ gate dielectrics that are at the core of electronic devices. However, a bottleneck remains with regard to obtaining high-performance REO dielectrics due to the serious hygroscopic issue and high defect states. Here, a general boronization strategy is reported to enhance the high-κ REO gate dielectric performance. Complementary characterization reveals that boronization is capable of reducing oxygen vacancies/hydroxyl defects in REOs and suppressing moisture absorption, leading to the improvement of leakage current, breakdown strength (up to 9 MV/cm), and capacitance-frequency stability. Furthermore, oxide transistors based on boronized REO dielectrics demonstrate state-of-the-art device characteristics with a high mobility of 40 cm2/V s, a current on/off ratio of 108, a subthreshold swing of 82 mV/dec, a hysteresis of 0.05 V, and superior bias stress stability.
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Affiliation(s)
- Wangying Xu
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Tao Peng
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Changjie Zhou
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Deliang Zhu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
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8
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Liang Z, Wu W, Fu X, Ning H, Xu W, Xiong X, Qiu T, Luo C, Yao R, Peng J. Flexible High-Entropy Poly(vinyl alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor. J Phys Chem Lett 2023; 14:9245-9249. [PMID: 37812073 DOI: 10.1021/acs.jpclett.3c02462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrOx high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal-insulator-metal (MIM) and TFT devices and carried out flexible tests. The test results show that the mixed dielectric layer attains a leakage current of 3.6 × 10-11 A under the bending radius of 5 mm. In the application of the TFT, the device still has good performance after 10 000 bends with a mobility of 3.1 cm2 V-1 s-1, an Ion/Ioff of 1.4 × 107, a threshold voltage of 3.3 V, and a threshold swing of 0.20 V/decade. In addition, the average transmittance of the hybrid dielectric layer in the visible range is 90.8%. Therefore, high-entropy PVA hybrid films have high transparency, low leakage current, and good bending resistance and have broad application prospects in transparent and flexible devices.
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Affiliation(s)
- Zhihao Liang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Weijing Wu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Xiao Fu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Wei Xu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Xin Xiong
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Tian Qiu
- Department of Intelligent Manufacturing, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China
| | - Cheng Luo
- School of Materials Science and Engineering, Hubei University of Automotive Technology, Shiyan, Hubei 442002, People's Republic of China
| | - Rihui Yao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Junbiao Peng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
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9
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Park JH, Park W, Na JH, Lee J, Eun JS, Feng J, Kim DK, Bae JH. Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2568. [PMID: 37764597 PMCID: PMC10536517 DOI: 10.3390/nano13182568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2023] [Revised: 09/09/2023] [Accepted: 09/11/2023] [Indexed: 09/29/2023]
Abstract
High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium-oxide (InOx) semiconductors using a solution process for high-performance thin-film transistors (TFTs). To achieve superior field-effect mobility and switching characteristics in TFTs, the bandgap and thickness of the InOx were tuned by controlling the InOx solution molarity. As a result, a high field-effect mobility and on/off-current ratio of 13.95 cm2 V-1 s-1 and 1.42 × 1010, respectively, were achieved using 3.12-nanometer-thick InOx. Our results showed that the charge transport of optimized InOx with a thickness of 3.12 nm is dominated by percolation conduction due to its low surface roughness and appropriate carrier concentration. Furthermore, the atomically thin InOx TFTs showed superior positive and negative gate bias stress stabilities, which are important in electronic applications. The proposed oxide TFTs could provide an effective means of the fabrication of scalable, high-throughput, and high-performance transistors for next-generation electronic applications.
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Affiliation(s)
- Jun-Hyeong Park
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Won Park
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Jeong-Hyeon Na
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Jinuk Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Jun-Su Eun
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Junhao Feng
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Do-Kyung Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Jin-Hyuk Bae
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
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10
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Gan X, Dou W, Hou W, Yuan X, Lei L, Zhou Y, Yang J, Chen D, Zhou W, Tang D. Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2345. [PMID: 37630930 PMCID: PMC10459306 DOI: 10.3390/nano13162345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2023] [Revised: 07/24/2023] [Accepted: 08/14/2023] [Indexed: 08/27/2023]
Abstract
Low-voltage Zn-doped CuI thin film transistors (TFTs) gated by chitosan dielectric were fabricated at a low temperature. The Zn-doped CuI TFT exhibited a more superior on/off current ratio than CuI TFT due to the substitution or supplementation of copper vacancies by Zn ions. The Zn-doped CuI films were characterized by scanning electron microscope, X-ray diffraction, and X-ray photoelectron spectroscopy. The Zn-doped CuI TFTs exhibited an on/off current ratio of 1.58 × 104, a subthreshold swing of 70 mV/decade, and a field effect mobility of 0.40 cm2V-1s-1, demonstrating good operational stability. Due to the electric-double-layer (EDL) effect and high specific capacitance (17.3 μF/cm2) of chitosan gate dielectric, Zn-doped CuI TFT operates at a voltage below -2 V. The threshold voltage is -0.2 V. In particular, we have prepared Zn-doped CuI TFTs with two in-plane gates and NOR logic operation is implemented on such TFTs. In addition, using the ion relaxation effect and EDL effect of chitosan film, a simple pain neuron simulation is realized on such a p-type TFTs for the first time through the bottom gate to regulate the carrier transport of the channel. This p-type device has promising applications in low-cost electronic devices, complementary electronic circuit, and biosensors.
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Affiliation(s)
| | - Wei Dou
- Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, China; (X.G.); (W.H.); (X.Y.); (L.L.); (Y.Z.); (J.Y.); (D.C.)
| | | | | | | | | | | | | | - Weichang Zhou
- Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, China; (X.G.); (W.H.); (X.Y.); (L.L.); (Y.Z.); (J.Y.); (D.C.)
| | - Dongsheng Tang
- Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, China; (X.G.); (W.H.); (X.Y.); (L.L.); (Y.Z.); (J.Y.); (D.C.)
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11
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Park W, Park JH, Eun JS, Lee J, Na JH, Lee SH, Jang J, Kang IM, Kim DK, Bae JH. Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2231. [PMID: 37570549 PMCID: PMC10421181 DOI: 10.3390/nano13152231] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/28/2023] [Accepted: 07/31/2023] [Indexed: 08/13/2023]
Abstract
The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | - Jin-Hyuk Bae
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (W.P.)
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12
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Amen MT, Pham TTT, Cheah E, Tran DP, Thierry B. Metal-Oxide FET Biosensor for Point-of-Care Testing: Overview and Perspective. Molecules 2022; 27:molecules27227952. [PMID: 36432052 PMCID: PMC9698540 DOI: 10.3390/molecules27227952] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 11/12/2022] [Accepted: 11/14/2022] [Indexed: 11/18/2022] Open
Abstract
Metal-oxide semiconducting materials are promising for building high-performance field-effect transistor (FET) based biochemical sensors. The existence of well-established top-down scalable manufacturing processes enables the reliable production of cost-effective yet high-performance sensors, two key considerations toward the translation of such devices in real-life applications. Metal-oxide semiconductor FET biochemical sensors are especially well-suited to the development of Point-of-Care testing (PoCT) devices, as illustrated by the rapidly growing body of reports in the field. Yet, metal-oxide semiconductor FET sensors remain confined to date, mainly in academia. Toward accelerating the real-life translation of this exciting technology, we review the current literature and discuss the critical features underpinning the successful development of metal-oxide semiconductor FET-based PoCT devices that meet the stringent performance, manufacturing, and regulatory requirements of PoCT.
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13
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Xu W, Xu C, Zhang Z, Huang W, Lin Q, Zhuo S, Xu F, Liu X, Zhu D, Zhao C. Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2880. [PMID: 36014745 PMCID: PMC9415306 DOI: 10.3390/nano12162880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Revised: 08/15/2022] [Accepted: 08/18/2022] [Indexed: 06/15/2023]
Abstract
We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel's nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.
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Affiliation(s)
- Wangying Xu
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Chuyu Xu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Zhibo Zhang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Weicheng Huang
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Qiubao Lin
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Shuangmu Zhuo
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Fang Xu
- Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Deliang Zhu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
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14
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Xu W, Xu C, Hong L, Xu F, Zhao C, Zhang Y, Fang M, Han S, Cao P, Lu Y, Liu W, Zhu D. Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors. NANOMATERIALS 2022; 12:nano12071216. [PMID: 35407335 PMCID: PMC9000645 DOI: 10.3390/nano12071216] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Revised: 03/29/2022] [Accepted: 04/02/2022] [Indexed: 11/30/2022]
Abstract
We demonstrate the growth of ultra-thin (~5 nm) indium ytterbium oxide (In-Yb-O) thin film using a simple vacuum-free aqueous solution approach for the first time. The influences of Yb addition on the microstructural, chemical, optical, and electrical properties of In2O3 are well investigated. The analyses indicate that Yb dopant could suppress oxygen vacancy defects effectively owing to the lower standard electrode potential, lower electronegativity, and stronger metal-oxide bond strength than that of In. The optimized In-Yb-O thin-film transistors (TFTs) exhibit excellent electrical performance (mobility of 8 cm2/Vs and on/off ratio of ~108) and enhanced stability. The triumph of In-Yb-O TFTs is owing to the high quality In2O3 matrix, the remarkable suppressor of Yb, and the nanometer-thin and atomically smooth nature (RMS: ~0.26 nm) of channel layer. Therefore, the eco-friendly water-induced ultra-thin In-Yb-O channel provides an excellent opportunity for future large-scale and cost-effective electronic applications.
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Affiliation(s)
- Wangying Xu
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
- Correspondence: (W.X.); (F.X.); (D.Z.)
| | - Chuyu Xu
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
| | - Liping Hong
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
| | - Fang Xu
- Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China
- Correspondence: (W.X.); (F.X.); (D.Z.)
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China;
| | - Yu Zhang
- Department of Electronic and Communication Engineering, Shenzhen Polytechnic, Shenzhen 518055, China;
| | - Ming Fang
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
| | - Shun Han
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
| | - Peijiang Cao
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
| | - Youming Lu
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
| | - Wenjun Liu
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
| | - Deliang Zhu
- College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China; (C.X.); (L.H.); (M.F.); (S.H.); (P.C.); (Y.L.); (W.L.)
- Correspondence: (W.X.); (F.X.); (D.Z.)
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15
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Xu W, Peng T, Li Y, Xu F, Zhang Y, Zhao C, Fang M, Han S, Zhu D, Cao P, Liu W, Lu Y. Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications. NANOMATERIALS 2022; 12:nano12071125. [PMID: 35407244 PMCID: PMC9000396 DOI: 10.3390/nano12071125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 03/22/2022] [Accepted: 03/28/2022] [Indexed: 11/24/2022]
Abstract
Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.
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Affiliation(s)
- Wangying Xu
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
- Correspondence: (W.X.); (F.X.); (D.Z.)
| | - Tao Peng
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
| | - Yujia Li
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
| | - Fang Xu
- Center for Advanced Material Diagnostic Technology, Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China
- Correspondence: (W.X.); (F.X.); (D.Z.)
| | - Yu Zhang
- Department of electronic and Communication Engineering, Shenzhen Polytechnic, Shenzhen 518055, China;
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China;
| | - Ming Fang
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
| | - Shun Han
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
| | - Deliang Zhu
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
- Correspondence: (W.X.); (F.X.); (D.Z.)
| | - Peijiang Cao
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
| | - Wenjun Liu
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
| | - Youming Lu
- Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China; (T.P.); (Y.L.); (M.F.); (S.H.); (P.C.); (W.L.); (Y.L.)
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16
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Sil A, Goldfine EA, Huang W, Bedzyk MJ, Medvedeva JE, Facchetti A, Marks TJ. Role of Fluoride Doping in Low-Temperature Combustion-Synthesized ZrO x Dielectric Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12340-12349. [PMID: 35232012 DOI: 10.1021/acsami.1c22853] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Zirconium oxide (ZrOx) is an attractive metal oxide dielectric material for low-voltage, optically transparent, and mechanically flexible electronic applications due to the high dielectric constant (κ ∼ 14-30), negligible visible light absorption, and, as a thin film, good mechanical flexibility. In this contribution, we explore the effect of fluoride doping on structure-property-function relationships in low-temperature solution-processed amorphous ZrOx. Fluoride-doped zirconium oxide (F:ZrOx) films with a fluoride content between 1.7 and 3.2 in atomic (at) % were synthesized by a combustion synthesis procedure. Irrespective of the fluoride content, grazing incidence X-ray diffraction, atomic-force microscopy, and UV-vis spectroscopy data indicate that all F:ZrOx films are amorphous, atomically smooth, and transparent in visible light. Impedance spectroscopy measurements reveal that unlike solution-processed fluoride-doped aluminum oxide (F:AlOx), fluoride doping minimally affects the frequency-dependent capacitance instability of solution-processed F:ZrOx films. This result can be rationalized by the relatively weak Zr-F versus Zr-O bonds and the large ionic radius of Zr+4, as corroborated by EXAFS analysis and MD simulations. Nevertheless, the performance of pentacene thin-film transistors (TFTs) with F:ZrOx gate dielectrics indicates that fluoride incorporation reduces I-V hysteresis in the transfer curves and enhances bias stress stability versus TFTs fabricated with analogous, but undoped ZrOx films as gate dielectrics, due to reduced trap density.
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Affiliation(s)
- Aritra Sil
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Elise A Goldfine
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan 611731, China
| | - Michael J Bedzyk
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Julia E Medvedeva
- Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
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17
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Recent Advances in Metal−Oxide Thin−Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors and Neuromorphic Applications. COATINGS 2022. [DOI: 10.3390/coatings12020204] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/04/2022]
Abstract
Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.
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18
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Wang B, Huang W, Bedzyk MJ, Dravid VP, Hu YY, Marks TJ, Facchetti A. Combustion Synthesis and Polymer Doping of Metal Oxides for High-Performance Electronic Circuitry. Acc Chem Res 2022; 55:429-441. [PMID: 35044167 DOI: 10.1021/acs.accounts.1c00671] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
ConspectusTransparent conducting oxides (TCOs) are inorganic electrical conductors with optical band gaps greater than 3.3 eV. TCOs have been extensively explored in functional windows, touch screen applications, transparent displays, solar cells, and even electronic circuits. Amorphous metal oxide (a-MO) semiconductors are a TCO class that has made impressive progress since the first 2004 demonstration of their utility as the semiconducting layer in thin-film transistors (TFTs). Their excellent counterintuitive electron mobilities in the amorphous state fill the performance gap between amorphous silicon and polysilicon, widening TFT applicability to high-value products such as high-resolution flat panel displays and emerging flexible/wearable electronics. The possibility of solution processing MO "inks" from air-stable precursors, via roll-to-roll and high-throughput printing, further expands their appeal. However, most MO TFTs fabricated using solution-processing require postdeposition film annealing at elevated temperatures (>400 °C) to ensure high-quality films and stable charge transport. Thus, MO fabrication on and TFT integration with inexpensive and typically temperature-sensitive flexible polymer substrates remains challenging, as does reducing MO processing times to those acceptable for high-throughput semiconductor circuit manufacture. Consequently, new MO film processing methodologies are being developed to meet these requirements. Among them, science-based combustion synthesis (CS) and polymer doping are promising complementary approaches to optimize materials quality and manufacturing efficiency; they are the topic of this Account.This Account summarizes the progress in CS and MO polymer doping research, made largely at Northwestern University over the past decade, to create high-performance MO TFTs. Regarding CS, we begin with an overview of combustion precursor chemistry that strongly affects the resulting film quality and device performance. Then, single fuel and dual fuel combustion syntheses for diverse MO systems are discussed. Representative examples highlight recent advances, with a focus on the relationship between (co)fuel-oxidizer types/amounts, thermal behavior, film microstructure, and TFT performance. Next, the discussion focuses on polymer doping of several MO matrices as a new approach to achieve semiconducting MO compositions with excellent performance and mechanical flexibility. Thus, the effect of the polymer architecture and content in the MO precursor formulations on the MO film composition, microstructure, electronic structure, and charge transport are discussed. The concluding remarks highlight challenges and emerging opportunities.
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Affiliation(s)
- Binghao Wang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, 2 Sipailou, Nanjing, Jiangsu 210096, China
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan 611731, China
| | - Michael J. Bedzyk
- Applied Physics Program, Department of Materials Science and Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Vinayak P. Dravid
- Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Yan-Yan Hu
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Flexterra Corporation, 8025 Lamon Avenue, Skokie, Illinois 60077, United States
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19
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Low-Temperature and UV Irradiation Effect on Transformation of Zirconia -MPS nBBs-Based Gels into Hybrid Transparent Dielectric Thin Films. Gels 2022; 8:gels8020068. [PMID: 35200450 PMCID: PMC8870923 DOI: 10.3390/gels8020068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Revised: 01/14/2022] [Accepted: 01/17/2022] [Indexed: 12/10/2022] Open
Abstract
Bottom-up approaches in solutions enable the low-temperature preparation of hybrid thin films suitable for printable transparent and flexible electronic devices. We report the obtainment of new transparent PMMA/ZrO2 nanostructured -building blocks (nBBs) hybrid thin films (61–75 nm) by a modified sol-gel method using zirconium ethoxide, Zr(OEt)4, and 3-methacryloxypropyl trimethoxysilane (MPS) as a coupling agent and methylmethacrylate monomer (MMA). The effect of low-temperature and UV irradiation on the nBBs gel films is discussed. The thermal behaviors of the hybrid sols and as-deposed gel films were investigated by modulated thermogravimetric (mTG) and differential scanning calorimetry (DSC) analysis. The chemical structure of the resulted films was elucidated by X-ray photoelectron (XPS), infrared (IR) and Raman spectroscopies. Their morphology and crystalline structure were observed by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and grazing incidence X-ray diffraction. The cured films show zirconia nanocrystallites of 2–4 nm in the hybrid matrix and different self-assembled structures for 160 °C or UV treatment; excellent dielectric behavior, with dielectric constant values within 6.7–17.9, depending on the Zr(OEt)4:MMA molar ratio, were obtained.
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20
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Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method. MICROMACHINES 2021; 12:mi12121496. [PMID: 34945352 PMCID: PMC8704860 DOI: 10.3390/mi12121496] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 11/26/2021] [Accepted: 11/27/2021] [Indexed: 01/08/2023]
Abstract
The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.
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21
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Lee J, Jae M, Hassan SZ, Chung DS. Sublimation-doping with super bases for high-performance solution-processed heterojunction oxide thin film transistors. MATERIALS HORIZONS 2021; 8:3105-3112. [PMID: 34515283 DOI: 10.1039/d1mh00929j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We elucidate how non-destructive sublimation-doping of In2O3/ZnO heterojunctions with various amidine-based organic dopants affects the degree of band bending of the heterojunction and thus the overall performance of solution-processed heterojunction oxide thin-film transistors (TFTs). Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy analyses show that the stronger the basicity of the dopant, the smaller the EC - EF of ZnO that can be induced within a short doping time, resulting in a high electron mobility due to the increased electron density of the In2O3 layer at the vicinity of the heterointerface. Mott-Schottky analysis combined with secondary ion mass spectroscopy shows the preferential modification of EC - EF selectively for the ZnO layer. The use of a super base with the highest basicity exhibits a high electron mobility of 17.8 cm2 V-1 s-1 for the SiO2 and 37.8 cm2 V-1 s-1 on average (46.6 cm2 V-1 s-1 maximum) for the ZrO2 dielectric layers and enhanced operational bias-stress stability via sublimation-doping for 6 min, which can be attributed to the trap-filled, percolation-limited charge transport behavior. Reproducibility tests are conducted for more than 50 independently fabricated TFTs using the optimized doping technique, and electron mobility distributions with deviations <±10% are demonstrated. This study shows that sublimation doping with super bases can be a good solution for high mobility oxide TFTs with stability and reliability.
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Affiliation(s)
- Juhyeok Lee
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
| | - Mingyu Jae
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
| | - Syed Zahid Hassan
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
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22
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Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors. NANOMATERIALS 2021; 11:nano11102552. [PMID: 34684993 PMCID: PMC8539277 DOI: 10.3390/nano11102552] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 08/12/2021] [Accepted: 09/02/2021] [Indexed: 11/30/2022]
Abstract
Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (Vth), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm2/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.
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23
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Stallings K, Smith J, Chen Y, Zeng L, Wang B, Di Carlo G, Bedzyk MJ, Facchetti A, Marks TJ. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15399-15408. [PMID: 33779161 DOI: 10.1021/acsami.1c00249] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrOx and HfOx) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μSAT = 19.4 cm2 V-1 s-1) and low threshold voltages (Vth = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10-10 A) as well as high bias stress stability.
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Affiliation(s)
- Katie Stallings
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Jeremy Smith
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Yao Chen
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Li Zeng
- Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Gabriele Di Carlo
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Michael J Bedzyk
- Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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24
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Levine JD, Sharps MC, Cochran EA, Marsh DA, Casey WH, Johnson DW. Investigation of the physical, optical, and chemical properties of phase segregated AlCoOx thin films from a novel hexol-type cluster. Dalton Trans 2021; 50:3247-3252. [PMID: 33586724 DOI: 10.1039/d0dt03899g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The use of a novel inorganic nanoscale cluster (Al[(μ-OH)2Co(NH3)4]3(NO3)6) was investigated for its utility as a precursor for AlCoOx films. Mixed-metal aluminum and cobalt oxide thin films were solution deposited from the novel cluster solution via the spin-coating method on Si (100) and quartz substrates. The films were annealed at increasing temperatures up to 800 °C, and characterization of these films via TEM and XRD confirms binary Co3O4 crystalline phase present in an amorphous Al2O3 network. Films are relatively smooth (Rrms < 4 nm), polycrystalline, and demonstrate a tunable optical response dominated by Co3O4 with two electronic transitions.
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Affiliation(s)
- Jordan D Levine
- Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253, USA
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25
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Huang W, Yu X, Zeng L, Wang B, Takai A, Di Carlo G, Bedzyk MJ, Marks TJ, Facchetti A. Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2021; 13:3445-3453. [PMID: 33416304 DOI: 10.1021/acsami.0c20345] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Low-temperature, solution-processable, high-capacitance, and low-leakage gate dielectrics are of great interest for unconventional electronics. Here, we report a near room temperature ultraviolet densification (UVD) methodology for realizing high-performance organic-inorganic zirconia self-assembled nanodielectrics (UVD-ZrSANDs). These UVD-ZrSAND multilayers are grown from solution in ambient, densified by UV radiation, and characterized by X-ray reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance measurements. The resulting UVD-ZrSAND films exhibit large capacitances of >700 nF/cm2 and low leakage current densities of <10-7 A/cm2, which rival or exceed those synthesized by traditional thermal methods. Both the p-type organic semiconductor pentacene and the n-type metal oxide semiconductor In2O3 were used to investigate UVD-ZrSANDs as the gate dielectric in thin-film transistors, affording mobilities of 0.58 and 26.21 cm2/(V s), respectively, at a low gate voltage of 2 V. These results represent a significant advance in fabricating ultra-thin high-performance dielectrics near room temperature and should facilitate their integration into diverse electronic technologies.
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Affiliation(s)
- Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Xinge Yu
- Department of Biomedical Engineering, City University of Hong Kong, 83 Tat Chee Ave., Kowloon 000000, Hong Kong
| | - Li Zeng
- Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Atsuro Takai
- Molecular Design and Function Group, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Gabriele Di Carlo
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Michael J Bedzyk
- Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Flexterra Corporation, Skokie, Illinois 60077, United States
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26
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Higashino T, Kuribara K, Toda N, Uemura S, Tachibana H, Azumi R. Direct Preparation of Mixed Self-assembled Monolayers Based on Common-substructure-tailored Phosphonic Acids for Fine Control of Surface Wettability. CHEM LETT 2020. [DOI: 10.1246/cl.200460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Toshiki Higashino
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Kazunori Kuribara
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Naoya Toda
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Sei Uemura
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Hiroaki Tachibana
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Reiko Azumi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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27
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Bang SY, Mocanu FC, Lee TH, Yang J, Zhan S, Jung SM, Shin DW, Suh YH, Fan XB, Lee S, Choi HW, Occhipinti LG, Han SD, Kim JM. Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers. ACS OMEGA 2020; 5:21593-21601. [PMID: 32905305 PMCID: PMC7469374 DOI: 10.1021/acsomega.0c02225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/13/2020] [Accepted: 07/28/2020] [Indexed: 06/11/2023]
Abstract
We report on the design, fabrication, and characterization of heterostructure In-Zn-O (IZO) thin-film transistors (TFTs) with improved performance characteristics and robust operation. The heterostructure layer is fabricated by stacking a solution-processed IZO film on top of a buffer layer, which is deposited previously using an electron beam (e-beam) evaporator. A thin buffer layer at the dielectric interface can help to template the structure of the channel. The control of the precursors and of the solvent used during the sol-gel process can help lower the temperature needed for the sol-gel condensation reaction to proceed cleanly. This boosts the overall performance of the device with a significantly reduced subthreshold swing, a four-fold mobility increase, and a two-order of magnitude larger on/off ratio. Atomistic simulations of the a-IZO structure using molecular dynamics (both classical and ab initio) and hybrid density functional theory (DFT) calculations of the electronic structure reveal the potential atomic origin of these effects.
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28
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Jun L, Chen Q, Fu W, Yang Y, Zhu W, Zhang J. Electrospun Yb-Doped In 2O 3 Nanofiber Field-Effect Transistors for Highly Sensitive Ethanol Sensors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:38425-38434. [PMID: 32786210 DOI: 10.1021/acsami.0c12259] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Enhancing the reliability and sensitivity of gas sensors based on FETs has been of extensive concern for their practical application. However, few reports are available on nanofiber FET gas sensors fabricated by the electrospinning process. In this work, ethanol gas sensors based on Yb-doped In2O3 (InYbO) nanofiber FETs are fabricated by a simple and fast electrospinning method. The optimized In2O3 nanofiber FETs with a doping concentration of 4 mol % show a better electrical performance, including a high mobility of 6.67 cm2/Vs, an acceptable threshold voltage of 3.27 V, and a suitable on/off current ratio of 107, especially the enhanced bias-stress stability. When employed in ethanol gas sensors, the gas sensors exhibit enhanced stability and improved sensitivity with a high response of 40-10 ppm, which is remarkably higher than that of previously reported ethanol gas sensors. Moreover, the InYbO nanofiber FET sensors also demonstrate a low limit of detection of 1 ppm and improved sensing performance ranging from sensitivity to the ability of selectivity. This work opens up a new prospect to achieve highly sensitive, selective, and reliable ethanol gas sensors using electrospun Yb-In2O3 nanofiber FETs with improved stability.
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Affiliation(s)
- Li Jun
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Qi Chen
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Wenhui Fu
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Yaohua Yang
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Wenqing Zhu
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
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29
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Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application. COATINGS 2020. [DOI: 10.3390/coatings10070698] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO2 gate dielectric. The electrical properties of ZrO2 films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO2 as well as optimization of low-temperature solution process. The applications of ZrO2 and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance are prospected.
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30
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Zhuang X, Patel S, Zhang C, Wang B, Chen Y, Liu H, Dravid VP, Yu J, Hu YY, Huang W, Facchetti A, Marks TJ. Frequency-Agile Low-Temperature Solution-Processed Alumina Dielectrics for Inorganic and Organic Electronics Enhanced by Fluoride Doping. J Am Chem Soc 2020; 142:12440-12452. [PMID: 32539371 DOI: 10.1021/jacs.0c05161] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
The frequency-dependent capacitance of low-temperature solution-processed metal oxide (MO) dielectrics typically yields unreliable and unstable thin-film transistor (TFT) performance metrics, which hinders the development of next-generation roll-to-roll MO electronics and obscures intercomparisons between processing methodologies. Here, capacitance values stable over a wide frequency range are achieved in low-temperature combustion-synthesized aluminum oxide (AlOx) dielectric films by fluoride doping. For an optimal F incorporation of ∼3.7 atomic % F, the F:AlOx film capacitance of 166 ± 11 nF/cm2 is stable over a 10-1-104 Hz frequency range, far more stable than that of neat AlOx films (capacitance = 336 ± 201 nF/cm2) which falls from 781 ± 85 nF/cm2 to 104 ± 4 nF/cm2 over this frequency range. Importantly, both n-type/inorganic and p-type/organic TFTs exhibit reliable electrical characteristics with minimum hysteresis when employing the F:AlOx dielectric with ∼3.7 atomic % F. Systematic characterization of film microstructural/compositional and electronic/dielectric properties by X-ray photoelectron spectroscopy, time-of-fight secondary ion mass spectrometry, cross-section transmission electron microscopy, solid-state nuclear magnetic resonance, and UV-vis absorption spectroscopy reveal that fluoride doping generates AlOF, which strongly reduces the mobile hydrogen content, suppressing polarization mechanisms at low frequencies. Thus, this work provides a broadly applicable anion doping strategy for the realization of high-performance solution-processed metal oxide dielectrics for both organic and inorganic electronics applications.
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Affiliation(s)
- Xinming Zhuang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Technology, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.,Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Sawankumar Patel
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Chi Zhang
- Department of Materials Science and Engineering, The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Yao Chen
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Haoyu Liu
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Technology, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
| | - Yan-Yan Hu
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States.,Center of Interdisciplinary Magnetic Resonance, National High Magnetic Field Laboratory, 1800 East Paul Dirac Drive, Tallahassee, Florida 32310, United States
| | - Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States.,Flexterra Corporation, 8025 Lamon Avenue, Skokie, Illinois 60077, United States
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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31
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Cheng F, Verrelli E, Alharthi FA, Das S, Anthopoulos TD, Lai KT, Kemp NT, O'Neill M, Kelly SM. Solution-processable and photopolymerisable TiO 2 nanorods as dielectric layers for thin film transistors. RSC Adv 2020; 10:25540-25546. [PMID: 35518573 PMCID: PMC9055251 DOI: 10.1039/d0ra04445h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2020] [Accepted: 06/23/2020] [Indexed: 11/23/2022] Open
Abstract
We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 104, a turn-on voltage (V ON) of 1.2 V and a threshold voltage (V T) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7-9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO2 nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO2 nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying.
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Affiliation(s)
- Fei Cheng
- Department of Chemistry & Biochemistry, University of Hull Cottingham Road Hull HU6 7RX UK
| | - Emanuele Verrelli
- Department of Physics & Mathematics, University of Hull Cottingham Road Hull HU6 7RX UK
| | - Fahad A Alharthi
- Department of Chemistry & Biochemistry, University of Hull Cottingham Road Hull HU6 7RX UK
- Department of Chemistry, College of Science, King Saud University P. O. Box 2455 Riyadh 11451 Saudi Arabia
| | - Satyajit Das
- Centre for Plastic Electronics, Department of Physics, Blackett Laboratory, Imperial College London London SW7 2BW UK
| | - Thomas D Anthopoulos
- Centre for Plastic Electronics, Department of Physics, Blackett Laboratory, Imperial College London London SW7 2BW UK
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Centre Thuwal 23955-6900 Saudi Arabia
| | - Khue T Lai
- Electronic Systems Design Centre, Energy Safety Research Institute, College of Engineering, Swansea University Bay Campus Swansea SA1 8EN UK
| | - Neil T Kemp
- Department of Physics & Mathematics, University of Hull Cottingham Road Hull HU6 7RX UK
| | - Mary O'Neill
- School of Science & Technology, Nottingham Trent University 50 Shakespeare Street Nottingham NG1 3LL UK
| | - Stephen M Kelly
- Department of Chemistry & Biochemistry, University of Hull Cottingham Road Hull HU6 7RX UK
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32
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Jo J, Kang S, Heo JS, Kim Y, Park SK. Flexible Metal Oxide Semiconductor Devices Made by Solution Methods. Chemistry 2020; 26:9126-9156. [DOI: 10.1002/chem.202000090] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2020] [Indexed: 01/22/2023]
Affiliation(s)
- Jeong‐Wan Jo
- School of Electrical and Electronics EngineeringChung-Ang University Seoul 06980 Republic of Korea
- School of Advanced Materials Science and EngineeringSungkyunkwan University Suwon 16419 Republic of Korea
| | - Seung‐Han Kang
- School of Electrical and Electronics EngineeringChung-Ang University Seoul 06980 Republic of Korea
| | - Jae Sang Heo
- Department of MedicineUniversity of Connecticut School of Medicine Farmington CT 06030 USA
| | - Yong‐Hoon Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan University Suwon 16419 Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University Suwon 16419 Republic of Korea
| | - Sung Kyu Park
- School of Electrical and Electronics EngineeringChung-Ang University Seoul 06980 Republic of Korea
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33
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Shin JC, Kwon SM, Kang J, Jeon SP, Heo JS, Kim YH, Cho SW, Park SK. Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:25000-25010. [PMID: 32394695 DOI: 10.1021/acsami.0c04401] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
As an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO2 (c-TiO2) films required high-temperature crystallization conditions (≥500-600 °C), showing low electrical performance with a high defect density. In contrast, the suggested CMAC process could effectively lower crystallization temperature of the a-TiO2 films, enabling high-quality c-TiO2 films with well-aligned anatase grains and low-defect density. The various crystalline catalytic layers were deposited over the earth-abundant n-type amorphous titanium oxide (a-TiO2) films. Also, then, the CMAC process was performed for facile low-temperature translation of solution-processed a-TiO2 to a highly crystallized state. In particular, the Al-CMAC process using the crystalline thin-aluminum (Al) catalytic metal seed layer facilitates low-temperature (≥300 °C) crystallization of the solution-processed a-TiO2 films and the fabrication of high-performance solution-processed c-TiO2 thin-film transistors with superior field-effect mobility, good on/off switching behavior, and improved operational stability.
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Affiliation(s)
- Jae Cheol Shin
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Sung Min Kwon
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jingu Kang
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Seong Pil Jeon
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jae-Sang Heo
- Department of Medicine, University of Connecticut School of Medicine, Farmington, Connecticut 06030, United States
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sung Woon Cho
- Department of Printed Electronics Engineering, Sunchon National University, Sunchon, Jeonnam 57922, Republic of Korea
| | - Sung Kyu Park
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
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Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors. NANOMATERIALS 2020; 10:nano10050965. [PMID: 32443597 PMCID: PMC7325575 DOI: 10.3390/nano10050965] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/19/2020] [Revised: 05/13/2020] [Accepted: 05/13/2020] [Indexed: 01/27/2023]
Abstract
Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.
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Wang Y, Liao Q, She D, Lv Z, Gong Y, Ding G, Ye W, Chen J, Xiong Z, Wang G, Zhou Y, Han ST. Modulation of Binary Neuroplasticity in a Heterojunction-Based Ambipolar Transistor. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15370-15379. [PMID: 32153180 DOI: 10.1021/acsami.0c00635] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
To keep pace with the upcoming big-data era, the development of a device-level neuromorphic system with highly efficient computing paradigms is underway with numerous attempts. Synaptic transistors based on an all-solution processing method have received growing interest as building blocks for neuromorphic computing based on spikes. Here, we propose and experimentally demonstrated the dual operation mode in poly{2,2-(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)dithieno[3,2-b]thiophene-5,5-diyl-alt-thiophen-2,5-diyl}(PDPPBTT)/ZnO junction-based synaptic transistor from ambipolar charge-trapping mechanism to analog the spiking interfere with synaptic plasticity. The heterojunction formed by PDPPBTT and ZnO layers serves as the basis for hole-enhancement and electron-enhancement modes of the synaptic transistor. Distinctive synaptic responses of paired-pulse facilitation (PPF) and paired-pulse depression (PPD) were configured to achieve the training/recognition function for digit image patterns at the device-to-system level. The experimental results indicate the potential application of the ambipolar transistor in future neuromorphic intelligent systems.
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Affiliation(s)
- Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Qiufan Liao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Donghong She
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yue Gong
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Wenbin Ye
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Jinrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Ziyu Xiong
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Guoping Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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Yoo H, Kim WG, Kang BH, Kim HT, Park JW, Choi DH, Kim TS, Lim JH, Kim HJ. High Photosensitive Indium-Gallium-Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10673-10680. [PMID: 32052953 DOI: 10.1021/acsami.9b22634] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Visible light can be detected using an indium-gallium-zinc oxide (IGZO)-based phototransistor, with a selenium capping layer (SCL) that functions as a visible light absorption layer. Selenium (Se) exhibits photoconductive properties as its conductivity increases with illumination. We report an IGZO phototransistor with an SCL (SCL/IGZO phototransistor) that demonstrated optimal photoresponse characteristics when the SCL was 150 nm thick. The SCL/IGZO phototransistor exhibited a photoresponsivity of 1.39 × 103 A/W, photosensitivity of 4.39 × 109, detectivity of 3.44 × 1013 Jones, and external quantum efficiency of 3.52 × 103% when illuminated by green light (532 nm). Ultraviolet-visible spectroscopy and ultraviolet photoelectron spectroscopy analysis showed that Se has a narrow energy band gap, in which visible light is absorbed and forms a p-n junction with IGZO so that photogenerated electron-hole pairs are easily separated, which makes recombination more challenging. We show that electrons generated in the SCL flow through the IGZO layer, which enables the phototransistor to detect visible light. Furthermore, the SCL/IGZO phototransistor exhibited excellent durability and reversibility owing to the constant light and dark current and the time-dependent photoresponse characteristics over 8000 s when a red light (635 nm) source was turned on and off at a frequency of 0.1 Hz.
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Affiliation(s)
- Hyukjoon Yoo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Won-Gi Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hyung Tae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jeong Woo Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Dong Hyun Choi
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Tae Sang Kim
- Frontier Technology Team, Display Research Center, Samsung Display, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Jun Hyung Lim
- Frontier Technology Team, Display Research Center, Samsung Display, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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Tiwari N, Nirmal A, Kulkarni MR, John RA, Mathews N. Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors. Inorg Chem Front 2020. [DOI: 10.1039/d0qi00038h] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.
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Affiliation(s)
- Nidhi Tiwari
- Energy Research Institute @ NTU (ERI@N)
- Nanyang Technological University
- Singapore 637553
| | - Amoolya Nirmal
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
| | | | - Rohit Abraham John
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
| | - Nripan Mathews
- Energy Research Institute @ NTU (ERI@N)
- Nanyang Technological University
- Singapore 637553
- School of Materials Science and Engineering
- Nanyang Technological University
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Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure. MATERIALS 2019; 12:ma12213639. [PMID: 31694214 PMCID: PMC6862527 DOI: 10.3390/ma12213639] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2019] [Revised: 10/31/2019] [Accepted: 11/04/2019] [Indexed: 01/13/2023]
Abstract
Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.
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Chen Q, Li J, Yang Y, Zhu W, Zhang J. Combustion synthesis of electrospun LaInO nanofiber for high-performance field-effect transistors. NANOTECHNOLOGY 2019; 30:425205. [PMID: 31386631 DOI: 10.1088/1361-6528/ab306d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
One-dimensional semiconductor nanofibers are regarded as ideal materials for electronics due to their distinctive morphology and characteristics. In this work, La-doped indium oxide (LaInO) nanofibers are fabricated as the channel layer to reduce O vacancies and the density of interface trap states; this is clearly confirmed by investigating the stability under positive bias stress and the capacitance-voltage for field-effect transistors (FETs). The In2O3 nanofiber FETs optimized by doping with 5 mol% La exhibit excellent electrical performance with a mobility of 4.95 cm2 V-1 s-1 and an on/off current ratio of 1.1 × 108. In order to further enhance the electrical performance of LaInO nanofiber FETs, ZrAlO x film, which has a high dielectric constant, is employed as the insulator for the LaInO nanofiber FETs. The LaInO nanofiber FETs with ZrAlO x insulator have a high mobility of 13.5 cm2 V-1 s-1. These findings clearly indicate the great promise of La-doped In2O3 nanofibers in future one-dimensional nanoelectronics.
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Affiliation(s)
- Qi Chen
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
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41
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Hossein-Babaei F, Zare AH, Gharesi M. Quantitative Assessment of Vapor Molecule Adsorption to Solid Surfaces by Flow Rate Monitoring in Microfluidic Channels. Anal Chem 2019; 91:12827-12834. [PMID: 31538476 DOI: 10.1021/acs.analchem.9b02543] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Measuring parameters related to gas adsorption on the effective surfaces of solid samples is important in catalyst studies. Further attention on the subject has appeared due to the materials and methods required to concentrate the gaseous biomarkers for detection. The conventional methods are mainly based on the volumetric and gravimetric analyses, which are applicable to bulk samples. No standard method has yet been provided for such measurements on thin films, which are the most commonly used samples for material screening. Here, a novel method is presented for the adsorption coefficient measurement on thin-film samples. This method comprises coating of the inner walls of a microfluidic channel with the thin film under test. The recorded diffusion rates for a trace gas along this microchannel are compared with the solutions of the adsorption-diffusion equation of the channel for determining the adsorption coefficient of the gas molecule to the inner walls of the channel. The high ratio of surface-to-volume in such channels magnifies the gas sorption effects and improves accuracy. The method is fast, versatile, and cost-effective, allowing measurements at different temperatures and atmospheric pressures. The adsorption coefficients of different isomers of butanol on poly(methyl methacrylate) sheets, zinc oxide thick films, and gold thin films are determined as examples.
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Affiliation(s)
- Faramarz Hossein-Babaei
- Electronic Materials Laboratory, Electrical Engineering Department , K. N. Toosi University of Technology , Tehran , 16317-14191 , Iran
| | - Ali Hooshyar Zare
- Electronic Materials Laboratory, Electrical Engineering Department , K. N. Toosi University of Technology , Tehran , 16317-14191 , Iran
| | - Mohsen Gharesi
- Electronic Materials Laboratory, Electrical Engineering Department , K. N. Toosi University of Technology , Tehran , 16317-14191 , Iran
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Koslowski N, Hoffmann RC, Trouillet V, Bruns M, Foro S, Schneider JJ. Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route. RSC Adv 2019; 9:31386-31397. [PMID: 35527957 PMCID: PMC9072413 DOI: 10.1039/c9ra05348d] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2019] [Accepted: 09/20/2019] [Indexed: 01/30/2023] Open
Abstract
Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO21) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1-3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm-2, leakage current densities below 1.0 × 10-9 A cm-2 (at 1 MV cm-1) and breakdown voltages above 2 MV cm-1. Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed Y x O y based TFT was fabricated employing the precursor Y-DEM-NO21. The device exhibits decent TFT characteristics with a saturation mobility (μ sat) of 2.1 cm2 V-1 s-1, a threshold voltage (V th) of 6.9 V and an on/off current ratio (I on/off) of 7.6 × 105.
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Affiliation(s)
- Nico Koslowski
- Fachbereich Chemie, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt Alarich-Weiss-Str. 12 64287 Darmstadt Germany
| | - Rudolf C Hoffmann
- Fachbereich Chemie, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt Alarich-Weiss-Str. 12 64287 Darmstadt Germany
| | - Vanessa Trouillet
- Institute for Applied Materials (IAM-ESS), Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany
| | - Michael Bruns
- Institute for Applied Materials (IAM-ESS), Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany
| | - Sabine Foro
- Department of Material Science, Technische Universität Darmstadt Alarich-Weiss-Str. 8 64287 Darmstadt Germany
| | - Jörg J Schneider
- Fachbereich Chemie, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt Alarich-Weiss-Str. 12 64287 Darmstadt Germany
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Chen L, Xu W, Liu W, Han S, Cao P, Fang M, Zhu D, Lu Y. Polymer-Assisted Deposition of Gallium Oxide for Thin-Film Transistor Applications. ACS APPLIED MATERIALS & INTERFACES 2019; 11:29078-29085. [PMID: 31334628 DOI: 10.1021/acsami.9b10888] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report the fabrication of gallium oxide (GaOx) thin films by a novel polymer-assisted deposition (PAD) method. The influence and mechanism of postannealing temperature (200-800 °C) on the formation and properties of GaOx thin films are investigated by complementary characterization analyses. The results indicate that solution-deposited GaOx experiences the elimination of organic residuals as well as the transformation of amorphous GaOx to crystalline GaOx with the increase in annealing temperature. High-quality GaOx could be achieved with a smooth surface, wide band gap, and decent dielectric performance. Moreover, the solution-processed In2O3 thin-film transistors based on optimized GaOx dielectrics demonstrate outstanding electrical performance, including a low operating voltage of 5 V, a mobility of 3.09 cm2 V-1 s-1, an on/off current ratio of 1.8 × 105, and a subthreshold swing of 0.18 V dec-1. Our study suggests that GaOx achieved by PAD shows great potential for further low-cost and high-performance optoelectronic applications.
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Affiliation(s)
- Lin Chen
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Wangying Xu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Wenjun Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Shun Han
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Peijiang Cao
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Ming Fang
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Deliang Zhu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Youming Lu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
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Chung JM, Wu F, Jeong SW, Kim JH, Xiang Y. Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure. NANOSCALE RESEARCH LETTERS 2019; 14:165. [PMID: 31098841 PMCID: PMC6522603 DOI: 10.1186/s11671-019-3001-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2018] [Accepted: 05/06/2019] [Indexed: 06/09/2023]
Abstract
The effects of diffuse Cu+ in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on the microstructure and performance during a clean etch stopper (CL-ES) process and a back channel etch (BCE) process are investigated and compared. The CL-ES layer formed with a clean component, as verified by TOF-SIMS, can protect the a-IGZO layer from the S/D etchant and prevent Cu+ diffusion, which helps reduce the number of accepter-like defects and improve the reliability of the TFTs. The fabricated CL-ES-structured TFTs have a superior output stability (final Ids/initial Ids = 82.2 %) compared to that of the BCE-structured TFTs (53.5%) because they have a better initial SS value (0.09 V/dec vs 0.46 V/dec), and a better final SS value (0.16 V/dec vs 0.24 V/dec) after the high current stress (HCS) evaluation. In particular, the variation in the threshold voltages has a large difference (3.5 V for the CL-ES TFTs and 7.2 V for the BCE TFTs), which means that the CL-ES-structured TFTs have a higher reliability than the BCE-structured TFTs. Therefore, the CL-ES process is expected to promote the widespread application of a-IGZO technology in the semiconductor industry.
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Affiliation(s)
- Jae-Moon Chung
- School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, West High-Tech Zone, Chengdu, 611731 Sichuan China
- Chongqing BOE Optoelectronics Technology Co., Ltd, Chongqing, 400718 China
| | - Fang Wu
- School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, West High-Tech Zone, Chengdu, 611731 Sichuan China
| | | | - Ji-Hoon Kim
- Chongqing BOE Optoelectronics Technology Co., Ltd, Chongqing, 400718 China
| | - Yong Xiang
- School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, West High-Tech Zone, Chengdu, 611731 Sichuan China
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Kim JS, Cho SW, Deshpande NG, Kim YB, Yun YD, Jung SH, Kim DS, Cho HK. Toward Robust Photoelectrochemical Operation of Cuprous Oxide Nanowire Photocathodes Using a Strategically Designed Solution-Processed Titanium Oxide Passivation Coating. ACS APPLIED MATERIALS & INTERFACES 2019; 11:14840-14847. [PMID: 30938151 DOI: 10.1021/acsami.9b02727] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
To date, TiO2 films prepared by atomic layer deposition are widely used to prepare Cu2O nanowire (NW)-based photocathodes with photoelectrochemical (PEC) durability as this approach enables conformal coating and furnishes chemical robustness. However, this common approach requires complicated interlayers and makes the fabrication of photocathodes with reproducible performance and long-term stability difficult. Although sol-gel-based approaches have been well established for coating surfaces with oxide thin films, these techniques have rarely been studied for oxide passivation in PEC applications, because the sol-gel coating methods are strongly influenced by surface chemical bonding and have been mainly demonstrated on flat substrates. As a unique strategy based on solution processing, herein, we suggest a creative solution for two problems encountered in the conformal coating of surfaces with oxide layers: (i) how to effectively prevent corrosion of materials with hydrophilic surfaces by simply using a single TiO2 surface protection layer instead of a complex multilayer structure and (ii) guaranteeing perfect chemical durability. A Cu(OH)2 NW can be easily prepared as an intermediate phase by anodization of a Cu metal, where the former inherently possesses a hydrophilic hydroxylated surface and thus, enables thorough coating with TiO2 precursor solutions. Chemically robust nanowires are then generated as the final product via the phase transformation of Cu(OH)2 to Cu2O via sintering at 600 °C. The coated NWs exhibit excellent PEC properties and a stable performance. Consequently, the perfect chemical isolation of the Cu2O NWs from the electrolyte allows a remarkable PEC operation with the maintenance of the initial photocurrent for more than one day.
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Affiliation(s)
- Joo Sung Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Sung Woon Cho
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Nishad G Deshpande
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Young Been Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Young Dae Yun
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Sung Hyeon Jung
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Dong Su Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
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Abstract
While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic applications, their performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics. Among the various p-type TCMs proposed so far, Cu-based oxides and oxychalcogenides have demonstrated promising results in terms of their optical and electrical properties. Hence, they are the focus of this current review. Their basic material properties, including their crystal structures, conduction mechanisms, and electronic structures will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping/co-doping, annealing, and other innovative ways to improve conductivity will be discussed in detail.
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47
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Jewel MU, Mahmud MDS, Monne MA, Zakhidov A, Chen MY. Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications. RSC Adv 2019; 9:1841-1848. [PMID: 35516157 PMCID: PMC9059772 DOI: 10.1039/c8ra08470j] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2018] [Accepted: 12/18/2018] [Indexed: 11/21/2022] Open
Abstract
We report the growth of zirconium oxide (ZrO2) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors. All the samples are deposited at low-temperature ranges of 150–250 °C. The films are very uniform with RMS roughness less than 4% with respect to their thickness. The atomic force microscopy (AFM) shows a significant change in surface morphology from tapered posts to undulating mountain-like structures with several hundreds of ALD cycles. The results from X-ray diffraction (XRD) analysis exhibit an amorphous to the crystalline structure with temperature variation, which is independent of the thickness of the films. All our samples are hydrophilic as contact angles are less than 90°. The capacitance–voltage (C–V) and conductance–voltage (Gp/ω–V) characteristics of ZrO2 dielectrics for silicon metal–oxide–semiconductor (MOS) capacitors are studied for different temperatures. For the n-type substrate MOS capacitors, the dielectric constants are estimated to be 7.5–11. Due to the low deposition temperature, a hydrophilic surface, and high k value, the ALD-ZrO2 dielectric can be compatible for printed transistors. The processes of fabrication and characterization of inkjet-printed graphene transistors is demonstrated using the ZrO2 dielectric. The possible solvents, surfactant, and the dielectric induced modifications in graphene flakes are demonstrated by Raman spectra. The graphene flakes spread uniformly on the ZrO2 surface. The functional inkjet-printed graphene transistor characteristics are demonstrated to illustrate the field effect behavior with the ALD-ZrO2 dielectric. We report the growth of zirconium oxide (ZrO2) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors.![]()
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Affiliation(s)
| | | | - Mahmuda Akter Monne
- Materials Science, Engineering, and Commercialization
- Texas State University
- San Marcos
- USA
| | - Alex Zakhidov
- Materials Science, Engineering, and Commercialization
- Texas State University
- San Marcos
- USA
- Department of Physics
| | - Maggie Yihong Chen
- Ingram School of Engineering
- Texas State University
- San Marcos
- USA
- Materials Science, Engineering, and Commercialization
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48
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Kusaka Y, Shirakawa N, Ogura S, Leppäniemi J, Sneck A, Alastalo A, Ushijima H, Fukuda N. Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication. ACS APPLIED MATERIALS & INTERFACES 2018; 10:24339-24343. [PMID: 29972298 DOI: 10.1021/acsami.8b07465] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO x and a plasma-protecting layer of ZrO x situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.
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Affiliation(s)
- Yasuyuki Kusaka
- Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan
| | - Naoki Shirakawa
- Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan
| | - Shintaro Ogura
- Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan
| | - Jaakko Leppäniemi
- VTT Technical Research Centre of Finland Ltd. , Tietotie 3 , Espoo FI-02150 , Finland
| | - Asko Sneck
- VTT Technical Research Centre of Finland Ltd. , Tietotie 3 , Espoo FI-02150 , Finland
| | - Ari Alastalo
- VTT Technical Research Centre of Finland Ltd. , Tietotie 3 , Espoo FI-02150 , Finland
| | - Hirobumi Ushijima
- Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan
| | - Nobuko Fukuda
- Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan
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