1
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Radatović B, Çakıroğlu O, Jadriško V, Frisenda R, Senkić A, Vujičić N, Kralj M, Petrović M, Castellanos-Gomez A. Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:15596-15604. [PMID: 38500411 PMCID: PMC10982932 DOI: 10.1021/acsami.4c00458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 03/03/2024] [Accepted: 03/05/2024] [Indexed: 03/20/2024]
Abstract
In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.
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Affiliation(s)
- Borna Radatović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Onur Çakıroğlu
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Valentino Jadriško
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Physics
Department, Politecnico di Milano, 20133 Milan, Italy
| | | | - Ana Senkić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Nataša Vujičić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marko Kralj
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marin Petrović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Andres Castellanos-Gomez
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
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2
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Yu QJ, Li XX, Li YC, Ding ST, Huang T, Gu ZY, Ou LX, Lu HL. High-performance MoS 2phototransistors with Hf 1-xAl xO back-gate dielectric layer grown by plasma enhanced atomic layer deposition. NANOTECHNOLOGY 2024; 35:195204. [PMID: 38316045 DOI: 10.1088/1361-6528/ad263f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Accepted: 02/05/2024] [Indexed: 02/07/2024]
Abstract
Molybdenum sulfide (MoS2) as an emerging optoelectronic material, shows great potential for phototransistors owing to its atomic thickness, adjustable band gap, and low cost. However, the phototransistors based on MoS2have been shown to have some issues such as large gate leakage current, and interfacial scattering, resulting in suboptimal optoelectronic performance. Thus, Al-doped hafnium oxide (Hf1-xAlx) is proposed to be a dielectric layer of the MoS2-based phototransistor to solve this problem because of the relatively higher crystallization temperature and dielectric constant. Here, a high-performance MoS2phototransistor with Hf1-xAlxO gate dielectric layer grown by plasma-enhanced atomic layer deposition has been fabricated and studied. The results show that the phototransistor exhibits a high responsivity of 2.2 × 104A W-1, a large detectivity of 1.7 × 1017Jones, a great photo-to-dark current ratio of 2.2 × 106%, and a high external quantum efficiency of 4.4 × 106%. The energy band alignment and operating mechanism were further used to clarify the reason for the enhanced MoS2phototransistor. The suggested MoS2phototransistors could provide promising strategies in further optoelectronic applications.
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Affiliation(s)
- Qiu-Jun Yu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xiao-Xi Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Emerging Device and Chip Laboratory, Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, People's Republic of China
| | - Yu-Chun Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Si-Tong Ding
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Teng Huang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Ze-Yu Gu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Lang-Xi Ou
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Jiashan Fudan Institute, Jiaxing, Zhejiang Province 314100, People's Republic of China
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3
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Hu L, Li X, Guo X, Xu M, Shi Y, Herve NB, Xiang R, Zhang Q. Electret Modulation Strategy to Enhance the Photosensitivity Performance of Two-Dimensional Molybdenum Sulfide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59704-59713. [PMID: 38087993 DOI: 10.1021/acsami.3c14836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Due to the limited light absorption efficiency of atomic thickness layers and the existence of quenching effects, photodetectors solely made of transition metal dichalcogenides (TMDs) have exhibited an unsatisfactory detection performance. In this article, electret/TMD hybridized devices were proposed by vertically coupling a MoS2 channel and the PTFE film, which reveals an optimized photodetection behavior. Negative charges were generated in the PTFE layer through the corona charging method, akin to applying a negative bias on the MoS2 channel in lieu of a traditional voltage-driven back gate. Under a charging voltage of -6 kV, PTFE/MoS2 devices reveal improved photodetection performance (Rhybrid = 67.95A/W versus Ronly = 3.37 A/W, at 470 nm, 1.20 mW cm-2) and faster recovery speed (τd(hybrid) = 2000 ms versus τd(only) = 2900 ms) compared to those bare MoS2 counterparts. The optimal detection performance (2 orders of magnitude) was obtained when the charging voltage was -2 kV, limited by the minimum of the carrier density in MoS2 channels. This study provides an alternative strategy to optimize optoelectronic devices based on the 2D components through non-voltage-driven gating.
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Affiliation(s)
- Lian Hu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xinyu Guo
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Nduwarugira B Herve
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Rong Xiang
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
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4
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Kim G, Dang DX, Gul HZ, Ji H, Kim EK, Lim SC. Investigating charge traps in MoTe 2field-effect transistors: SiO 2insulator traps and MoTe 2bulk traps. NANOTECHNOLOGY 2023; 35:035702. [PMID: 37804823 DOI: 10.1088/1361-6528/ad0126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 10/06/2023] [Indexed: 10/09/2023]
Abstract
Two-dimensional material-based field-effect transistors are promising for future use in electronic and optoelectronic applications. However, trap states existing in the transistors are known to hinder device performance. They capture/release carriers in the channel and lead to hysteresis in the transfer characteristics. In this work, we fabricated MoTe2field-effect transistors on two different gate dielectrics, SiO2and h-BN, and investigated temperature-dependent charge trapping behavior on the hysteresis in their transfer curves. We observed that devices with SiO2back-gate dielectric are affected by both SiO2insulator traps and MoTe2intrinsic bulk traps, with the latter becoming prominent at temperatures above 310 K. Conversely, devices with h-BN back-gate dielectric, which host a negligible number of insulator traps, primarily exhibit MoTe2bulk traps at high temperatures, enabling us to estimate the trap energy level at 389 meV below the conduction band edge. A similar energy level of 396 meV below the conduction band edge was observed from the emission current transient measurement. From a previous computational study, we expect these trap states to be the tellurium vacancy. Our results suggest that charge traps in MoTe2field-effect transistors can be reduced by careful selection of gate insulators, thus providing guidelines for device fabrication.
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Affiliation(s)
- Giheon Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dang Xuan Dang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hamza Zad Gul
- Department of Electrical Engineering, Namal University, Mianwali 42250, Pakistan
| | - Hyunjin Ji
- Department of Electrical Engineering, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Eun Kyu Kim
- Department of Physics and Quantum-Function Research Laboratory, Hanyang University, Seoul 04763, Republic of Korea
| | - Seong Chu Lim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
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5
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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6
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Cho H, Lee D, Ko K, Lin DY, Lee H, Park S, Park B, Jang BC, Lim DH, Suh J. Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations. ACS NANO 2023; 17:7384-7393. [PMID: 37052666 DOI: 10.1021/acsnano.2c11538] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional materials and their heterostructures have thus far been identified as leading candidates for nanoelectronics owing to the near-atom thickness, superior electrostatic control, and adjustable device architecture. These characteristics are indeed advantageous for neuro-inspired computing hardware where precise programming is strongly required. However, its successful demonstration fully utilizing all of the given benefits remains to be further developed. Herein, we present van der Waals (vdW) integrated synaptic transistors with multistacked floating gates, which are reconfigured upon surface oxidation. When compared with a conventional device structure with a single floating gate, our double-floating-gate (DFG) device exhibits better nonvolatile memory performance, including a large memory window (>100 V), high on-off current ratio (∼107), relatively long retention time (>5000 s), and satisfactory cyclic endurance (>500 cycles), all of which can be attributed to its increased charge-storage capacity and spatial redistribution. This facilitates highly effective modulation of trapped charge density with a large dynamic range. Consequently, the DFG transistor exhibits an improved weight update profile in long-term potentiation/depression synaptic behavior for nearly ideal classification accuracies of up to 96.12% (MNIST) and 81.68% (Fashion-MNIST). Our work adds a powerful option to vdW-bonded device structures for highly efficient neuromorphic computing.
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Affiliation(s)
- Hoyeon Cho
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Donghyun Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Kyungmin Ko
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Der-Yuh Lin
- Department of Electronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan
| | - Huimin Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sangwoo Park
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Beomsung Park
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Byung Chul Jang
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Dong-Hyeok Lim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
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7
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Wang ZM, Yao CB, Wang LY, Wang X, Jiang CH, Yin HT. Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS 2/Seed Layer Heterointerface and Photo-Excitation Mechanism. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17364-17376. [PMID: 36973948 DOI: 10.1021/acsami.3c00706] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS2. The strain and interface engineering of MoS2/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS2 on different substrates and electron-hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS2, the relative numerical changes of physical parameters of MoS2 films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.
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Affiliation(s)
- Ze-Miao Wang
- Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China
| | - Cheng-Bao Yao
- Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China
| | - Li-Yuan Wang
- Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China
| | - Xue Wang
- Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China
| | - Cai-Hong Jiang
- Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China
| | - Hai-Tao Yin
- Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China
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8
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Su J, Li X, Xu M, Zhang J, Liu X, Zheng X, Shi Y, Zhang Q. Enhancing Photodetection Ability of MoS 2 Nanoscrolls via Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3307-3316. [PMID: 36596237 DOI: 10.1021/acsami.2c18537] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Van der Waals semiconductors have been really confirmed in two-dimensional (2D) layered systems beyond the traditional limits of lattice-matching requirements. The extension of this concept to the 1D atomic level may generate intriguing physical functionalities due to its non-covalent bonding surface. However, whether the curvature of the lattice in such rolled-up structures affects their optoelectronic features or the performance of devices established on them remains an open question. Here, MoS2-based nanoscrolls were obtained by virtue of an alkaline solution-assisted method and the 0D/1D (BaTiO3/MoS2) strategy to tune their optoelectronic properties and improve the light sensing performance was explored. The capillary force generated by a drop of NaHCO3 solution could drive the delamination of nanosheets from the underlying substrate and a spontaneous rolling-up process. The package of BaTiO3 particles in MoS2 nanoscrolls has been evident by TEM image, and the optical characterizations were mirrored via micro-Raman spectroscopy and photoluminescence. These bare MoS2 nanoscrolls reveal a reduced photoresponse compared to the plane structures due to the curvature of the lattice. However, such BaTiO3/MoS2 nanoscrolls exhibit a significantly improved photodetection (Rhybrid = 73.9 A/W vs Ronly = 1.1 A/W and R2D = 1.5 A/W at 470 nm, 0.58 mW·cm-2), potentially due to the carrier extraction/injection occurring between BaTiO3 and MoS2. This study thereby provides an insight into 1D van der Waals material community and demonstrates a general approach to fabricate high-performance 1D van der Waals optoelectronic devices.
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Affiliation(s)
- Jun Su
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Jian Zhang
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xiaolian Liu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Zheng
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
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9
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Ji E, Yang K, Shin JC, Kim Y, Park JW, Kim J, Lee GH. Exciton-dominant photoluminescence of MoS 2 by a functionalized substrate. NANOSCALE 2022; 14:14106-14112. [PMID: 36070461 DOI: 10.1039/d2nr03455g] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Transition metal dichalcogenides (TMDs) have been considered as promising candidates for transparent and flexible optoelectronic devices owing to their large exciton binding energy and strong light-matter interaction. However, monolayer (1L) TMDs exhibited different intensities and spectra of photoluminescence (PL), and the characteristics of their electronic devices also differed in each study. This has been explained in terms of various defects in TMDs, such as vacancies and grain boundaries, and their surroundings, such as dielectric screening and charged impurities, which lead to non-radiative recombination of trions, low quantum yield (QY), and unexpected doping. However, it should be noted that the surface conditions of the substrate are also a critical factor in determining the properties of TMDs located on the substrate. Here, we demonstrate that the optical and electrical properties of 1L MoS2 are strongly influenced by the functionalized substrate. The PL of 1L MoS2 placed on the oxygen plasma-treated SiO2 substrate was highly p-doped owing to the functional groups of -OH on SiO2, resulting in a strong enhancement of PL by approximately 20 times. The PL QY of 1L MoS2 on plasma-treated SiO2 substrate increased by one order of magnitude. Surprisingly, the observed PL spectra show the suppression of non-radiative recombination by trions, thus the exciton-dominant PL led to a prolonged lifetime of MoS2 on the plasma-treated substrate. The MoS2 field-effect transistors fabricated on plasma-treated SiO2 also exhibited a large hysteresis in the transfer curve owing to charge trapping of the functional groups. Our study demonstrates that the functional groups on the substrate strongly affect the characteristics of 1L MoS2, which provides clues as to why MoS2 exfoliated on various substrates always exhibited different properties in previous studies.
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Affiliation(s)
- Eunji Ji
- Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Kyungmin Yang
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - June-Chul Shin
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Youngbum Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jin-Woo Park
- Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
- Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826, Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
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10
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Kwon S, Jeong DY, Hong C, Oh S, Song J, Choi SH, Kim KK, Yoon S, Choi T, Yee K, Kim J, You Y, Kim D. Exciton Transfer at Heterointerfaces of MoS 2 Monolayers and Fluorescent Molecular Aggregates. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201875. [PMID: 35712754 PMCID: PMC9376849 DOI: 10.1002/advs.202201875] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Revised: 05/25/2022] [Indexed: 06/15/2023]
Abstract
Integration of distinct materials to form heterostructures enables the proposal of new functional devices based on emergent physical phenomena beyond the properties of the constituent materials. The optical responses and electrical transport characteristics of heterostructures depend on the charge and exciton transfer (CT and ET) at the interfaces, determined by the interfacial energy level alignment. In this work, heterostructures consisting of aggregates of fluorescent molecules (DY1) and 2D semiconductor MoS2 monolayers are fabricated. Photoluminescence spectra of DY1/MoS2 show quenching of the DY1 emission and enhancement of the MoS2 emission, indicating a strong electronic interaction between these two materials. Nanoscopic mappings of the light-induced contact potential difference changes rule out the CT process at the interface. Using femtosecond transient absorption spectroscopy, the rapid interfacial ET process from DY1 aggregates to MoS2 and a fourfold extension of the exciton lifetime in MoS2 are elucidated. These results suggest that the integration of 2D inorganic semiconductors with fluorescent molecules can provide versatile approaches to engineer the physical characteristics of materials for both fundamental studies and novel optoelectronic device applications.
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Affiliation(s)
- Soyeong Kwon
- Department of PhysicsEwha Womans UniversitySeoul03760Korea
| | - Dong Yeun Jeong
- Division of Chemical Engineering and Materials Scienceand Graduate Program for System Health Science and EngineeringEwha Womans UniversitySeoul03760Korea
| | - Chengyun Hong
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Korea
| | - Saejin Oh
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Korea
| | - Jungeun Song
- Department of PhysicsEwha Womans UniversitySeoul03760Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Korea
| | - Seokhyun Yoon
- Department of PhysicsEwha Womans UniversitySeoul03760Korea
| | - Taeyoung Choi
- Department of PhysicsEwha Womans UniversitySeoul03760Korea
| | - Ki‐Ju Yee
- Department of PhysicsChungnam National UniversityDaejeon34134Korea
| | - Ji‐Hee Kim
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Korea
| | - Youngmin You
- Division of Chemical Engineering and Materials Scienceand Graduate Program for System Health Science and EngineeringEwha Womans UniversitySeoul03760Korea
| | - Dong‐Wook Kim
- Department of PhysicsEwha Womans UniversitySeoul03760Korea
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11
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Scolfaro D, Finamor M, Trinchão LO, Rosa BLT, Chaves A, Santos PV, Iikawa F, Couto ODD. Acoustically Driven Stark Effect in Transition Metal Dichalcogenide Monolayers. ACS NANO 2021; 15:15371-15380. [PMID: 34450007 DOI: 10.1021/acsnano.1c06854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The Stark effect is one of the most efficient mechanisms to manipulate many-body states in nanostructured systems. In mono- and few-layer transition metal dichalcogenides, it has been successfully induced by optical and electric field means. Here, we tune the optical emission energies and dissociate excitonic states in MoSe2 monolayers employing the 220 MHz in-plane piezoelectric field carried by surface acoustic waves. We transfer the monolayers to high dielectric constant piezoelectric substrates, where the neutral exciton binding energy is reduced, allowing us to efficiently quench (above 90%) and red-shift the excitonic optical emissions. A model for the acoustically induced Stark effect yields neutral exciton and trion in-plane polarizabilities of 530 and 630 × 10-5 meV/(kV/cm)2, respectively, which are considerably larger than those reported for monolayers encapsulated in hexagonal boron nitride. Large in-plane polarizabilities are an attractive ingredient to manipulate and modulate multiexciton interactions in two-dimensional semiconductor nanostructures for optoelectronic applications.
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Affiliation(s)
- Diego Scolfaro
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Matheus Finamor
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Luca O Trinchão
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Bárbara L T Rosa
- Departamento de Fisica, Universidade Federal de Minas Gerais (UFMG), 30123-970 Belo Horizonte, Brazil
| | - Andrey Chaves
- Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60455-900 Fortaleza, Ceará, Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020, Antwerp, Belgium
| | - Paulo V Santos
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Fernando Iikawa
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Odilon D D Couto
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
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12
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Tran MD, Lee SG, Jeon S, Kim ST, Kim H, Nguyen VL, Adhikari S, Woo S, Park HC, Kim Y, Kim JH, Lee YH. Decelerated Hot Carrier Cooling in Graphene via Nondissipative Carrier Injection from MoS 2. ACS NANO 2020; 14:13905-13912. [PMID: 32813494 DOI: 10.1021/acsnano.0c06311] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One key to improve the performance of advanced optoelectronic devices and energy harvesting in graphene is to understand the predominant carrier scattering via optical phonons. Nevertheless, low light absorbance in graphene yields a limited photoexcited carrier density, hampering the hot carrier effect, which is strongly correlated to the hot optical phonon bottleneck effect as the energy-loss channel. Here, by integrating graphene with monolayer MoS2 possessing stronger light absorbance, we demonstrate an efficient interfacial hot carrier transfer between graphene and MoS2 in their heterostructure with a prolonged relaxation time using broadband transient differential transmittance spectroscopy. We observe that the carrier relaxation time of graphene in the heterostructure is 4 times slower than that of bare graphene. This is explained by nondissipative interlayer transfer from MoS2 to graphene, which is attributed to the enhanced hot optical phonon bottleneck effect of graphene in the heterostructure by an increased photoexcited carrier population. A significant reduction of both amplitude and relaxation time in A- and B-excitons is another evidence of the interlayer transfer from MoS2 to graphene. The nondissipative interlayer charge transfer from MoS2 to graphene is confirmed by density functional calculations. This provides a different platform to further study the photoinduced hot carrier effect in graphene heterostructures for photothermoelectric detectors or hot carrier solar cells.
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Affiliation(s)
- Minh Dao Tran
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sung-Gyu Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sunam Jeon
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sung-Tae Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyun Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Van Luan Nguyen
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Subash Adhikari
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sungjong Woo
- Center for Theoretical Physics of Complex System, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea
| | - Hee Chul Park
- Center for Theoretical Physics of Complex System, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea
| | - Youngkuk Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ji-Hee Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
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13
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Seol M, Lee MH, Kim H, Shin KW, Cho Y, Jeon I, Jeong M, Lee HI, Park J, Shin HJ. High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003542. [PMID: 32935911 DOI: 10.1002/adma.202003542] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Revised: 08/03/2020] [Indexed: 05/13/2023]
Abstract
For practical device applications, monolayer transition metal dichalcogenide (TMD) films must meet key industry needs for batch processing, including the high-throughput, large-scale production of high-quality, spatially uniform materials, and reliable integration into devices. Here, high-throughput growth, completed in 12 min, of 6-inch wafer-scale monolayer MoS2 and WS2 is reported, which is directly compatible with scalable batch processing and device integration. Specifically, a pulsed metal-organic chemical vapor deposition process is developed, where periodic interruption of the precursor supply drives vertical Ostwald ripening, which prevents secondary nucleation despite high precursor concentrations. The as-grown TMD films show excellent spatial homogeneity and well-stitched grain boundaries, enabling facile transfer to various target substrates without degradation. Using these films, batch fabrication of high-performance field-effect transistor (FET) arrays in wafer-scale is demonstrated, and the FETs show remarkable uniformity. The high-throughput production and wafer-scale automatable transfer will facilitate the integration of TMDs into Si-complementary metal-oxide-semiconductor platforms.
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Affiliation(s)
- Minsu Seol
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Min-Hyun Lee
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Haeryong Kim
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Keun Wook Shin
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Yeonchoo Cho
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Insu Jeon
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Myoungho Jeong
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Hyung-Ik Lee
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Jiwoong Park
- Department of Chemistry, University of Chicago, Chicago, IL, 60637, USA
| | - Hyeon-Jin Shin
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
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14
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Pak J, Lee I, Cho K, Kim JK, Jeong H, Hwang WT, Ahn GH, Kang K, Yu WJ, Javey A, Chung S, Lee T. Intrinsic Optoelectronic Characteristics of MoS 2 Phototransistors via a Fully Transparent van der Waals Heterostructure. ACS NANO 2019; 13:9638-9646. [PMID: 31345021 DOI: 10.1021/acsnano.9b04829] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.
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Affiliation(s)
- Jinsu Pak
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Ilmin Lee
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Kyungjune Cho
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Jae-Keun Kim
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Hyunhak Jeong
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Wang-Taek Hwang
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Geun Ho Ahn
- Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
| | - Keehoon Kang
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
| | - Ali Javey
- Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
| | - Seungjun Chung
- Photo-Electronic Hybrids Research Center , Korea Institute of Science and Technology (KIST) , Seoul 02792 , Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
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15
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Li L, Liu X, He H, Zhang N, Liu Z, Zhang G. A novel two-dimensional MgO-h-BN nanomaterial supported Pd catalyst for CO oxidation reaction. Catal Today 2019. [DOI: 10.1016/j.cattod.2018.07.025] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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16
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Han KH, Kim GS, Park J, Kim SG, Park JH, Yu HY. Reduction of Threshold Voltage Hysteresis of MoS 2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior. ACS APPLIED MATERIALS & INTERFACES 2019; 11:20949-20955. [PMID: 31117422 DOI: 10.1021/acsami.9b01391] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Although molybdenum disulfide (MoS2) is highlighted as a promising channel material, MoS2-based field-effect transistors (FETs) have a large threshold voltage hysteresis (Δ VTH) from interface traps at their gate interfaces. In this work, the Δ VTH of MoS2 FETs is significantly reduced by inserting a 3-aminopropyltriethoxysilane (APTES) passivation layer at the MoS2/SiO2 gate interface owing to passivation of the interface traps. The Δ VTH is reduced from 23 to 10.8 V by inserting the 1%-APTES passivation layers because APTES passivation prevents trapping and detrapping of electrons, which are the major source of the Δ VTH. The reduction in the density of interface traps ( Dit) is confirmed by the improvement of the subthreshold swing (SS) after inserting the APTES layer. Furthermore, the improvement in the synaptic characteristics of the MoS2 FET through the APTES passivation is investigated. Both inhibitory and excitatory postsynaptic currents (PSC) are increased by 33% owing to the reduction in the Δ VTH and the n-type doping effect of the APTES layer; moreover, the linearity of PSC characteristics is significantly improved because the reduction in Δ VTH enables the synaptic operation to be over the threshold region, which is linear. The application of the APTES gate passivation technique to MoS2 FETs is promising for reliable and accurate synaptic applications in neuromorphic computing technology as well as for the next-generation complementary logic applications.
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Affiliation(s)
| | | | | | | | - Jin-Hong Park
- School of Electronic and Electrical Engineering , Sungkyunkwan University , Suwon 16419 , Korea
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17
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Sun Y, Zhou Z, Huang Z, Wu J, Zhou L, Cheng Y, Liu J, Zhu C, Yu M, Yu P, Zhu W, Liu Y, Zhou J, Liu B, Xie H, Cao Y, Li H, Wang X, Liu K, Wang X, Wang J, Wang L, Huang W. Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806562. [PMID: 30861234 DOI: 10.1002/adma.201806562] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2018] [Revised: 01/03/2019] [Indexed: 05/25/2023]
Abstract
To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI2 -based interfacial semiconductors, PbI2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS2 is enhanced in MoS2 /PbI2 stacks, while a dramatic photoluminescence quenching of WS2 and WSe2 is revealed in WS2 /PbI2 and WSe2 /PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these monolayers; type I band alignment in MoS2 /PbI2 stacks, where fast-transferred charge carriers accumulate in MoS2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS2 /PbI2 and WSe2 /PbI2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS2 , WS2 , and WSe2 monolayers with similar electronic structures show completely distinct light-matter interactions when interfacing with PbI2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.
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Affiliation(s)
- Yan Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zishu Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhen Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jiangbin Wu
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Liujiang Zhou
- Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Yang Cheng
- State Key Laboratory for Mesoscopic Physics, School of Physics Department, Peking University, Beijing, 100871, China
| | - Jinqiu Liu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Chao Zhu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Maotao Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Peng Yu
- School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China
| | - Wei Zhu
- Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Yue Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jian Zhou
- National Laboratory of Solid-State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Bowen Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Hongguang Xie
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yi Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xinran Wang
- National Laboratory of Solid-State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics Department, Peking University, Beijing, 100871, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, Shaanxi, China
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18
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Xu R, Ye S, Xu K, Lei L, Hussain S, Zheng Z, Pang F, Xing S, Liu X, Ji W, Cheng Z. Nanoscale charge transfer and diffusion at the MoS 2/SiO 2 interface by atomic force microscopy: contact injection versus triboelectrification. NANOTECHNOLOGY 2018; 29:355701. [PMID: 29873636 DOI: 10.1088/1361-6528/aacad7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Understanding the process of charge generation, transfer, and diffusion between two-dimensional (2D) materials and their supporting substrates is very important for potential applications of 2D materials. Compared with the systematic studies of triboelectric charging in a bulk sample, a fundamental understanding of the triboelectrification of the 2D material/insulator system is rather limited. Here, the charge transfer and diffusion of both the SiO2 surface and MoS2/SiO2 interface through contact electrification and frictional electrification are investigated systematically in situ by scanning Kelvin probe microscopy and dual-harmonic electrostatic force microscopy. Different from the simple static charge transfer between SiO2 and the PtSi alloy atomic force microscope (AFM) tip, the charge transfer between the tip and the MoS2/SiO2 system is complicated. Triboelectric charges, generated by contact or frictional electrification with the AFM tip, are trapped at the MoS2/SiO2 interface and act as floating gates. The local charge discharge processes can be obtained by monitoring the surface potential. The charge decay time (τ) of the MoS2/SiO2 interface is one (or two) orders of magnitude larger than the decay time τ of the SiO2 surface. This work facilitates an understanding of the triboelectric and de-electrification of the interface between 2D materials and substrates. In addition to the charge transfer and diffusion, we demonstrate the nanopatterns of surface and interfacial charges, which have great potential for the application of self-assembly of charged nanostructures.
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Affiliation(s)
- Rui Xu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China. Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, People's Republic of China
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