Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

Plasma-Engineering of Oxygen Vacancies on NiCo2O4 Nanowires with Enhanced Bifunctional Electrocatalytic Performance for Rechargeable Zinc-air Battery

Designing an efficient, durable, and inexpensive bifunctional electrocatalyst toward oxygen evolution reactions (OER) and oxygen reduction reactions (ORR) remains a significant challenge for the development of rechargeable zinc-air batteries (ZABs). The generation of oxygen vacancies plays a vital role in modifying the surface properties of transition-metal-oxides (TMOs) and thus optimizing their electrocatalytic performances. Herein, a H2/Ar plasma is employed to generate abundant oxygen vacancies at the surfaces of NiCo2O4 nanowires. Compared with the Ar plasma, the H2/Ar plasma generated more oxygen vacancies at the catalyst surface owing to the synergic effect of the Ar-related ions and H-radicals in the plasma. As a result, the NiCo2O4 catalyst treated for 7.5 min in H2/Ar plasma exhibited the best bifunctional electrocatalytic activities and its gap potential between Ej = 10 for OER and E1/2 for ORR is even smaller than that of the noble-metal-based catalyst. In situ electrochemical experiments are also conducted to reveal the proposed mechanisms for the enhanced electrocatalytic performance. The rechargeable ZABs, when equipped with cathodes utilizing the aforementioned catalyst, achieved an outstanding charge-discharge gap, as well as superior cycling stability, outperforming batteries employing noble-metal catalyst counterparts.

Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source-drain current at constant gate and source-drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS2 devices.

Water adsorption on MoS2 under realistic atmosphere conditions and impacts on tribology

Molybdenum disulfide (MoS2) is a 2D material widely used as a dry lubricant. However, exposure to water and oxygen is known to reduce its effectiveness, and therefore an understanding of the uptake of water is important information for mitigating these effects. Here we use grand canonical Monte Carlo simulations to rigorously study water adsorption on MoS2 surfaces and edges with different concentrations of defects under realistic atmospheric conditions (i.e. various temperatures and humidity levels). We find that the amount of water adsorbed depends strongly on the number of defects. Simulations indicate that defect sites are generally saturated with water even at low ppm levels of humidity. Water binds strongly to S vacancies on interlamellar surfaces, but generally only one water molecule can fit on each of these sites. Defects on surfaces or edges of lamellae also strongly attract water molecules that then nucleate small clusters of water bonded via hydrogen bonding. We demonstrate that water preferentially binds to surface defects, but once those are saturated at a critical humidity level of about 500-1000 ppm water, water binds to edge sites where it negatively impacts the tribological performance of MoS2.

Investigating the role of undercoordinated Pt sites at the surface of layered PtTe2 for methanol decomposition

Transition metal dichalcogenides, by virtue of their two-dimensional structures, could provide the largest active surface for reactions with minimal materials consumed, which has long been pursued in the design of ideal catalysts. Nevertheless, their structurally perfect basal planes are typically inert; their surface defects, such as under-coordinated atoms at the surfaces or edges, can instead serve as catalytically active centers. Here we show a reaction probability > 90 % for adsorbed methanol (CH3OH) on under-coordinated Pt sites at surface Te vacancies, produced with Ar+ bombardment, on layered PtTe2 - approximately 60 % of the methanol decompose to surface intermediates CHxO (x = 2, 3) and 35 % to CHx (x = 1, 2), and an ultimate production of gaseous molecular hydrogen, methane, water and formaldehyde. The characteristic reactivity is attributed to both the triangular positioning and varied degrees of oxidation of the under-coordinated Pt at Te vacancies.

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS2 and WS2 via Proton Irradiation

It is critical to understand the laws of quantum mechanics in transformative technologies for computation and quantum information science applications to enable the ongoing second quantum revolution calls. Recently, spin qubits based on point defects have gained great attention, since these qubits can be initiated, selectively controlled, and read out with high precision at ambient temperature. The major challenge in these systems is controllably generating multiqubit systems while properly coupling the defects. To address this issue, we began by tackling the engineering challenges these systems present and understanding the fundamentals of defects. In this regard, we controllably generate defects in MoS2 and WS2 monolayers and tune their physicochemical properties via proton irradiation. We quantitatively discovered that the proton energy could modulate the defects' density and nature; higher defect densities were seen with lower proton irradiation energies. Three distinct defect types were observed: vacancies, antisites, and adatoms. In particular, the creation and manipulation of antisite defects provides an alternative way to create and pattern spin qubits based on point defects. Our results demonstrate that altering the particle irradiation energy can regulate the formation of defects, which can be utilized to modify the properties of 2D materials and create reliable electronic devices.

Study of Ion Velocity Effect on the Band Gap of CVD-Grown Few-Layer MoS2

The present work reports on a simple chemical vapor deposition (CVD) technique that employs alkali halide (NaCl) to synthesize high-quality few-layer MoS2 by reducing growth temperature from 850 to 650 °C, and its ion irradiation study for band gap modification. The Raman peak position difference of A1g to E12g of ≈24.5 cm-1 for the synthesized MoS2 corresponds to a few layers (<5 monolayers) of MoS2 on the substrate, as also confirmed by atomic force microscopy (AFM). The optical image shows the continuous distribution of flakes throughout the substrate and the average area of flakes ≈0.2 μm2 as confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. Swift heavy-ion (SHI) irradiation at 60, 100, and 150 MeV ion energies of 1 × 1012 ions/cm2 ion fluence have been used to modify the band gap in few-layer MoS2. The ions with two different energies are chosen at two sides of the Bragg peak of energy loss curve in such a way as to have the same value of electronic energy loss (Se) but different ion energies to examine the velocity effect for the ion-induced modification. The absorbance peaks for 60 and 150 MeV irradiated samples show the same effect in the band gap modification.

CNTs Bridged Basal-Plane-Active 2H-MoS2 Nanosheets for Efficient Robust Electrocatalysis

2D 2H-phase MoS2 is promising for electrocatalytic applications because of its stable phase, rich edge sites, and large surface area. However, the pristine low-conductive 2H-MoS2 suffers from limited electron transfer and surface activity, which become worse after their highly likely aggregation/stacking and self-curling during applications. In this work, these issues are overcome by conformally attaching the intercalation-detonation-exfoliated, surface S-vacancy-rich 2H-MoS2 onto robust conductive carbon nanotubes (CNTs), which electrically bridge bulk electrode and local MoS2 catalysts. The optimized MoS2 /CNTs nanojunctions exhibit outstanding stable electroactivity (close to commercial Pt/C): a polarization overpotential of 79 mV at the current density of 10 mA cm-2 and the Tafel slope of 33.5 mV dec-1 . Theoretical calculations unveil the metalized interfacial electronic structure of MoS2 /CNTs nanojunctions, enhancing defective-MoS2 surface activity and local conductivity. This work provides guidance on rational design for advanced multifaceted 2D catalysts combined with robust bridging conductors to accelerate energy technology development.

Effect of gamma irradiation on the physical properties of MoS2 monolayer

Two-dimensional transition metal dichalcogenides (2D-TMDs) have been proposed as novel optoelectronic materials for space applications due to their relatively light weight. MoS2 has been shown to have excellent semiconducting and photonic properties. Although the strong interaction of ionizing gamma radiation with bulk materials has been demonstrated, understanding its effect on atomically thin materials has scarcely been investigated. Here, we report the effect of gamma irradiation on the structural and electronic properties of a monolayer of MoS2. We perform Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) studies of MoS2, before and after gamma ray irradiation with varying doses and density functional theory (DFT) calculations. The Raman spectra and XPS results demonstrate that point defects dominate after the gamma irradiation of MoS2. DFT calculations elucidate the electronic properties of MoS2 before and after irradiation. Our work makes several contributions to the field of 2D materials research. First, our study of the electronic density of states and the electronic properties of a MoS2 monolayer irradiated by gamma rays sheds light on the properties of a MoS2 monolayer under gamma irradiation. Second, our study confirms that point defects are formed as a result of gamma irradiation. And third, our DFT calculations qualitatively suggest that the conductivity of the MoS2 monolayer may increase after gamma irradiation due to the creation of additional defect states.

Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS2

Defect engineering of van der Waals semiconductors has been demonstrated as an effective approach to manipulate the structural and functional characteristics toward dynamic device controls, yet correlations between physical properties with defect evolution remain underexplored. Using proton irradiation, we observe an enhanced exciton-to-trion conversion of the atomically thin WS₂. The altered excitonic states are closely correlated with nanopore induced atomic displacement, W nanoclusters, and zigzag edge terminations, verified by scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. Density functional theory calculation suggests that nanopores facilitate formation of in-gap states that act as sinks for free electrons to couple with excitons. The ion energy loss simulation predicts a dominating electron ionization effect upon proton irradiation, providing further evidence on band perturbations and nanopore formation without destroying the overall crystallinity. This study provides a route in tuning the excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering approach.

Insights into the Dynamic Evolution of Defects in Electrocatalysts

This review focuses on the formation and preparation of defects, the dynamic evolution process of defects, and the influence of defect dynamic evolution on catalytic reactions. The summary of the current advances in the dynamic evolution process of defects in oxygen evolution reaction, hydrogen evolution reaction, nitrogen reduction reaction, oxygen reduction reaction, and carbon dioxide reduction reaction, and the given perspectives are expected to provide a more comprehensive understanding of defective electrocatalysts on the structural evolution process during electrocatalysis and the reaction mechanisms, especially for the defect dynamic evolution on the performance in catalytic reactions.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Tuning of the electronic and vibrational properties of epitaxial MoS2through He-ion beam modification

Atomically thin transition metal dichalcogenides (TMDs), like MoS₂with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV)⁴He⁺ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS₂at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of⁴He⁺ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS₂lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS₂and other 2D materials.

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

Vacancy Defects in 2D Transition Metal Dichalcogenide Electrocatalysts: From Aggregated to Atomic Configuration

Vacancy defect engineering has been well leveraged to flexibly shape comprehensive physicochemical properties of diverse catalysts. In particular, growing research effort has been devoted to engineering chalcogen anionic vacancies (S/Se/Te) of 2D transition metal dichalcogenides (2D TMDs) toward the ultimate performance limit of electrocatalytic hydrogen evolution reaction (HER). In spite of remarkable progress achieved in the past decade, systematic and in-depth insights into the state-of-the-art vacancy engineering for 2D-TMDs-based electrocatalysis are still lacking. Herein, this review delivers a full picture of vacancy engineering evolving from aggregated to atomic configurations covering their development background, controllable manufacturing, thorough characterization, and representative HER application. Of particular interest, the deep-seated correlations between specific vacancy regulation routes and resulting catalytic performance improvement are logically clarified in terms of atomic rearrangement, charge redistribution, energy band variation, intermediate adsorption-desorption optimization, and charge/mass transfer facilitation. Beyond that, a broader vision is cast into the cutting-edge research fields of vacancy-engineering-based single-atom catalysis and dynamic structure-performance correlations across catalyst service lifetime. Together with critical discussion on residual challenges and future prospects, this review sheds new light on the rational design of advanced defect catalysts and navigates their broader application in high-efficiency energy conversion and storage fields.

Enhanced Tetracycline Adsorption of MoS2 via Defect Introduction Under Microwave Irradiation

Defect engineering is a promising method for improving the performance of MoS₂ in various fields. In this study, sulfur-defect-enriched MoS₂ (SD-MoS₂) nanosheets were fabricated via a facile microwave-hydrothermal strategy in 10 min for tetracycline (TC) adsorption applications. The introduction of sulfur defects in MoS₂ induced more exposed unsaturated sulfur atoms at the edge, enhancing the interaction between the adsorbent and antibiotic and improving the adsorption activity of the antibiotic. Density functional theory calculations further revealed that sulfur defects in MoS₂ could alter the electronic structure and exhibited low TC adsorption energy of -2.09 eV. This work provides a new method for fabricating MoS₂ nanosheets and other transition metal dichalcogenide-based adsorbents with enhanced antibiotic removal performance and a comprehensive understanding of antibiotic removal mechanisms in SD-MoS₂.

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.

Nonequilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Accurate measurements and physical understanding of thermal boundary resistance (R) of two-dimensional (2D) materials are imperative for effective thermal management of 2D electronics and photonics. In previous studies, heat dissipation from 2D material devices was presumed to be dominated by phonon transport across the interfaces. In this study, we find that, in addition to phonon transport, thermal resistance between nonequilibrium phonons in the 2D materials could play a critical role too when the 2D material devices are internally self-heated, either optically or electrically. We accurately measure the R of oxide/MoS₂/oxide and oxide/graphene/oxide interfaces for three oxides (SiO₂, HfO₂, and Al₂O₃) by differential time-domain thermoreflectance (TDTR). Our measurements of R across these interfaces with external heating are 2-4 times lower than the previously reported R of the similar interfaces measured by Raman thermometry with internal self-heating. Using a simple model, we show that the observed discrepancy can be explained by an additional internal thermal resistance (R_int) between nonequilibrium phonons present during Raman measurements. We subsequently estimate that, for MoS₂ and graphene, R_int ≈ 31 and 22 m² K GW^-1, respectively. The values are comparable to the thermal resistance due to finite phonon transmission across interfaces of 2D materials and thus cannot be ignored in the design of 2D material devices. Moreover, the nonequilibrium phonons also lead to a different temperature dependence than that by phonon transport. As such, our work provides important insights into physical understanding of heat dissipation in 2D material devices.

Size Effects in Single- and Few-Layer MoS2 Nanoflakes: Impact on Raman Phonons and Photoluminescence

The high optical absorption and emission of bidimensional MoS₂ are fundamental properties for optoelectronic and biodetection applications and the opportunity to retain these properties in high quality nano-sized flakes would bring further possibilities. Here, a large set of single-layer and few-layer (2–3 layers) MoS₂ flakes with size in the range from 10 nm to 20 μm are obtained on sapphire by vapor deposition techniques and evaluated combining the information from the Raman phonons with photoluminescence (PL) and absorption bands. The flakes have triangular shape and are found to be progressively relaxed from the tensile strain imposed by the sapphire substrate as their size is reduced. An increasing hole doping as size decreases is deduced from the blue shift of the A_1g phonon, related to charge transfer from adsorbed oxygen. No clear correlation is observed between defects density and size, therefore, doping would be favored by the preferential adsorption of oxygen at the edges of the flakes, being progressively more important as the edge/surface ratio is incremented. This hole doping also produces a shift of the PL band to higher energies, up to 60 meV. The PL intensity is not found to be correlated to the size but to the presence of defects. The trends with size for single-layer and for 2–3 layer samples are found to be similar and the synthesis method does not influence PL efficiency which remains high down to 40 nm being thus promising for nanoscale photonics.

N, P co-doping triggered phase transition of MoS2 with enlarged interlayer spacing for efficient hydrogen evolution

Molybdenum disulfide (MoS2)-based transition-metal chalcogenides are considered to be cost-efficient, environmentally-friendly, and stable materials in the application of electrocatalytic hydrogen production.

Spin-dependent vibronic response of a carbon radical ion in two-dimensional WS2

Atomic spin centers in 2D materials are a highly anticipated building block for quantum technologies. Here, we demonstrate the creation of an effective spin-1/2 system via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides. Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping are activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state, the carbon impurity is computed to have a magnetic moment of 1 μ_B resulting from an unpaired electron populating a spin-polarized in-gap orbital. We show that the CRI defect states couple to a small number of local vibrational modes. The vibronic coupling strength critically depends on the spin state and differs for monolayer and bilayer WS₂. The carbon radical ion is a surface-bound atomic defect that can be selectively introduced, features a well-understood vibronic spectrum, and is charge state controlled.

Spin-polarized defects in 2D materials are attracting attention for future quantum technology applications, but their controlled fabrication is still challenging. Here, the authors report the creation and characterization of effective spin 1/2 defects via the atomically-precise generation of magnetic carbon radical ions in 2D WS₂.

Single-Atom Engineering to Ignite 2D Transition Metal Dichalcogenide Based Catalysis: Fundamentals, Progress, and Beyond

Single-atom catalysis has been recognized as a pivotal milestone in the development history of heterogeneous catalysis by virtue of its superior catalytic performance, ultrahigh atomic utilization, and well-defined structure. Beyond single-atom protrusions, two more motifs of single-atom substitutions and single-atom vacancies along with synergistic single-atom motif assemblies have been progressively developed to enrich the single-atom family. On the other hand, besides traditional carbon material based substrates, a wide variety of 2D transitional metal dichalcogenides (TMDs) have been emerging as a promising platform for single-atom catalysis owing to their diverse elemental compositions, variable crystal structures, flexible electronic structures, and intrinsic activities toward many catalytic reactions. Such substantial expansion of both single-atom motifs and substrates provides an enriched toolbox to further optimize the geometric and electronic structures for pushing the performance limit. Concomitantly, higher requirements have been put forward for synthetic and characterization techniques with related technical bottlenecks being continuously conquered. Furthermore, this burgeoning single-atom catalyst (SAC) system has triggered serial scientific issues about their changeable single atom-2D substrate interaction, ambiguous synergistic effects of various atomic assemblies, as well as dynamic structure-performance correlations, all of which necessitate further clarification and comprehensive summary. In this context, this Review aims to summarize and critically discuss the single-atom engineering development in the whole field of 2D TMD based catalysis covering their evolution history, synthetic methodologies, characterization techniques, catalytic applications, and dynamic structure-performance correlations. In situ characterization techniques are highlighted regarding their critical roles in real-time detection of SAC reconstruction and reaction pathway evolution, thus shedding light on lifetime dynamic structure-performance correlations which lay a solid theoretical foundation for the whole catalytic field, especially for SACs.

Generating large out-of-plane piezoelectric properties of atomically thin MoS2via defect engineering

We calculated the piezoelectric properties of asymmetrically defected MoS₂ using density functional theory. By creating uneven numbers of defects on either side of two-dimensional MoS₂, the out-of-plane centrosymmetry of the charge distribution is clearly broken, and the out-of-plane piezoelectric response is induced. The largest out-of-plane piezoelectric response is associated with the highest defect ratio for MoS₂ to be semiconducting. We calculated the critical defect density of the metal-insulator transition of the asymmetrically defected MoS₂ to be 9.90 × 10¹⁴ cm^-2 and chemical formula MoS_1.22. The d₃₃ of the multilayer of optimally defected MoS₂ is found to be greater than those of AlN and ZnO, and in the same order of magnitude as lead zirconate titanate. All two-dimensional transition metal dichalcogenides can in principle be fabricated as piezoelectric with this approach. The required defect engineering is readily available with various types of ion irradiation or plasma treatment. By controlling the dose of the ion, the defect ratio and hence the piezoelectricity can be tuned. Such asymmetrically defected transition metal dichalcogenides can easily be integrated into two-dimensional transition metal dichalcogenide based devices, which is hard for conventional piezoelectric thin films to rival.

Ion Irradiation Inducing Oxygen Vacancy-Rich NiO/NiFe2 O4 Heterostructure for Enhanced Electrocatalytic Water Splitting

Oxygen evolution reaction (OER) is an obstacle to the electrocatalytic water splitting due to its unique four-proton-and-electron-transfer reaction process. Many methods, such as engineering heterostructure and introducing oxygen vacancy, have been used to improve the catalytic performance of electrocatalysts for OER. Herein, the above two kinds of regulation are simultaneously realized in a catalyst by using unique ion irradiation technology. A nanosheet structured NiO/NiFe₂ O₄ heterostructure with rich oxygen vacancies converted from nickel-iron layered double hydroxides by Ar⁺ ions irradiation shows significant enhancement in both OER and hydrogen evolution reaction performance. Density functional theory (DFT) calculations reveal that the construction of NiO/NiFe₂ O₄ can optimize the free energy of O^* to OOH^* process during OER reaction. The oxygen vacancy-rich NiO/NiFe₂ O₄ nanosheets have an overpotential of 279 mV at 10 mA cm^-2 and a low Tafel slope of 42 mV dec^-1 . Moreover, this NiO/NiFe₂ O₄ electrode shows an excellent long-term stability at 100 mA cm^-2 for 450 h. The synergetic effects between NiO and NiFe₂ O₄ make NiO/NiFe₂ O₄ heterostructure have high conductivity and fast charge transfer, abundant active sites, and high catalytic reactivity, contributing to its excellent performance.

Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2FET

The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS₂) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO₂in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS₂FET.

Defect activated optical Raman modes in single layer MoSe2

In the last decade, transition metal dichalcogenides (TMDs) have been intensively synthesized/studied thus linking their morphological aspect to their physical properties, and consequently leading to the understanding of the possible benefits of defects in such materials. Nevertheless, for future applications, quantifying and identifying defects in TMDs is still a milestone to reach in order to better employ these materials in optoelectronic devices. Raman Spectroscopy has been successfully employed in graphene to quantify punctual or line defects. In this paper, we bombarded monolayer MoSe₂with He ions and found out the existence of three defect activated Raman bands around 250-300 cm^-1. Density functional theory calculations were employed to obtain the electronic and phonon dispersion bands, making it possible to infer that these bands arise from inter-valley Raman double resonance processes. Interestingly, the same punctual defect model, that allows one to predict the defect concentration at which graphene starts to become amorphous, also works for TMDs. Hence, this work opens the door to the macroscopic quantification of defects in TMDs, which is essential for technological applications.

Davydov Splitting, Double-Resonance Raman Scattering, and Disorder-Induced Second-Order Processes in Chemical Vapor Deposited MoS2 Thin Films

Atomically thin MoS₂ hosts rich and distinct vibrational spectral features, which are prominent under selective excitation energies near the excitonic transitions. In this work, we have investigated the resonant Raman scattering of the MoS₂ layers of different thicknesses, from monolayer to five-layer samples, measured near resonance with the A excitonic transition. We show that the near-resonance excitation (1.96 eV) resulted in a Davydov splitting of the out-of-plane A-like phonon mode (A_1g) around 406 cm^-1 caused by the weak interlayer interaction. The number of Davydov splitting components (N) equals the number of layers (NL) of the MoS₂, suggesting that it can be used as a thickness indicator. The origin of various Davydov components is understood based on a simple nearest-interlayer interaction. We extend our investigation to identify some acoustic phonon modes associated with characteristic second-order double-resonance Raman and disorder-induced bands.

Engineering two-dimensional metal oxides and chalcogenides for enhanced electro- and photocatalysis

Two-dimensional (2D) metal oxides and chalcogenides (MOs & MCs) have been regarded as a new class of promising electro- and photocatalysts for many important chemical reactions such as hydrogen evolution reaction, CO₂ reduction reaction and N₂ reduction reaction in virtue of their outstanding physicochemical properties. However, pristine 2D MOs & MCs generally show the relatively poor catalytic performances due to the low electrical conductivity, few active sites and fast charge recombination. Therefore, considerable efforts have been devoted to engineering 2D MOs & MCs by rational structural design and chemical modification to further improve the catalytic activities. Herein, we comprehensively review the recent advances for engineering technologies of 2D MOs & MCs, which are mainly focused on the intercalation, doping, defects creation, facet design and compositing with functional materials. Meanwhile, the relationship between morphological, physicochemical, electronic, and optical properties of 2D MOs & MCs and their electro- and photocatalytic performances is also systematically discussed. Finally, we further give the prospect and challenge of the field and possible future research directions, aiming to inspire more research for achieving high-performance 2D MOs & MCs catalysts in energy storage and conversion fields.

Large-Area, Two-Dimensional MoS2 Exfoliated on Gold: Direct Experimental Access to the Metal-Semiconductor Interface

Two-dimensional semiconductors such as MoS₂ are promising for future electrical devices. The interface to metals is a crucial and critical aspect for these devices because undesirably high resistances due to Fermi level pinning are present, resulting in unwanted energy losses. To date, experimental information on such junctions has been obtained mainly indirectly by evaluating transistor characteristics. The fact that the metal-semiconductor interface is typically embedded, further complicates the investigation of the underlying physical mechanisms at the interface. Here, we present a method to provide access to a realistic metal-semiconductor interface by large-area exfoliation of single-layer MoS₂ on clean polycrystalline gold surfaces. This approach allows us to measure the relative charge neutrality level at the MoS₂-gold interface and its spatial variation almost directly using Kelvin probe force microscopy even under ambient conditions. By bringing together hitherto unconnected findings about the MoS₂-gold interface, we can explain the anomalous Raman signature of MoS₂ in contact to metals [ACS Nano. 7, 2013, 11350] which has been the subject of intense recent discussions. In detail, we identify the unusual Raman mode as the A_1g mode with a reduced Raman shift (397 cm^-1) due to the weakening of the Mo-S bond. Combined with our X-ray photoelectron spectroscopy data and the measured charge neutrality level, this is in good agreement with a previously predicted mechanism for Fermi level pinning at the MoS₂-gold interface [Nano Lett. 14, 2014, 1714]. As a consequence, the strength of the MoS₂-gold contact can be determined from the intensity ratio between the reduced A_1greduced mode and the unperturbed A_1g mode.

MoS2 Nanocomposite Films with High Irradiation Tolerance and Self-Adaptive Lubrication

Although nanostructures and oxide dispersion can reduce radiation-induced damage in materials and enhance radiation tolerance, previous studies prove that MoS₂ nanocomposite films subjected to several dpa heavy ion irradiation show significant degradation of tribological properties. Even in YSZ-doped MoS₂ nanocomposite films, irradiation leads to obvious disordering and damage such as vacancy accumulation to form lamellar voids in the amorphous matrix, which accelerates the failure of lubrication. However, after thermal annealing in vacuum, YSZ-doped MoS₂ nanocomposite films exhibit high irradiation tolerance, and their wear duration remains unchanged and the wear rate was nearly three orders of magnitude lower than that of the as-deposited films after 7 dpa irradiation. This successful combination of anti-irradiation and self-adaptive lubrication mainly results from the manipulation of the nanosize and the change of composition by annealing. Compared with the smaller nanograins in as-deposited MoS₂/YSZ nanocomposite films, the thermally annealed MoS₂ nanocrystals (7-15 nm) with fewer intrinsic defects exhibited remarkable stabilization upon irradiation. Abundant amorphous nanocrystal phases in ion-irradiated thermally annealed films, where each has advantages of their own, greatly inhibit accumulation of voids and crack growth in irradiation; meanwhile, they can be easily self-assembled under induction of friction and achieve self-adaptive lubrication.

Doping of MoS2 by "Cu" and "V": An Efficient Strategy for the Enhancement of Hydrogen Evolution Activity

To replace Pt-based compounds in the electrocatalytic hydrogen evolution reaction (HER), MoS₂ has already been established as an efficient catalyst. The electrocatalytic activity of MoS₂ is further improved by tuning the morphology and the electronic structure through doping, which helps the band energy position to be modified. Presently, thin sheets of MoS₂ (MoS₂-TSs) are synthesized via a microwave technique. Thin sheets of MoS₂ can outperform nanosheets of MoS₂ in the HER. Further, the efficiency of the thin sheets is improved by doping with different metals like Cu, V, Zn, Mn, Fe, Sn, etc. "Cu"- and "V"-doped MoS₂-TSs are highly efficient for the HER. At a fixed potential of -0.588 V vs RHE, Cu-doped MoS₂ (Cu-MoS₂-TS), V-doped MoS₂ (V-MoS₂-TS), and MoS₂-TS can generate current densities of 327.46, 308.45, and 127.82 mA/cm², respectively. The electrochemically active surface area increases nearly 7.7-fold and 2.5-fold for Cu-MoS₂-TS and V-MoS₂-TS than for MoS₂-TS, respectively. Cu-MoS₂-TS shows exceptionally high electrocatalytic stability up to 140 h in an acidic medium (0.5 M H₂SO₄). First-principles calculations using density functional theory (DFT) are performed, which are well matched with the experimental observations. DFT calculations dictate that after doping with "V" and "Cu" both valance band maxima and conduction band minima are uplifted, which indicates the higher hydrogen-ion-reducing ability of M-MoS₂-TS (M = Cu, V) compared to bare MoS₂-TS.

Constructing MoS2/Lignin-derived carbon nanocomposites for highly efficient removal of Cr(VI) from aqueous environment

Effective removal of Cr(VI) pollution from aquatic environment is in pressing need because of the detrimental effect of Cr(VI) to human health. Herein, we report a facile two-step approach to synthesis MoS₂/Lignin-derived Carbon (MoS₂@LDC) nanocomposites for highly efficient elimination of Cr(VI) from aqueous solutions. The MoS₂@LDC exhibited outstanding removal efficient for Cr(VI) (198.70 mg/g at pH = 2.0, T = 298.15 K and C_Initial = 20.0 mg/L). 99.35% of Cr(VI) can be removed by the composites in 30 min. Thermodynamic and kinetic studies suggest the removal of Cr(VI) is through both adsorption and reduction. The performance of MoS₂@LDC can be further enhanced by hydrogen plasma treatments, which was attributed to the sulfur vacancies induced improvement in the reduction activity of MoS₂ layer. The results of this work can guide the rational design of high-performance nanocomposite for efficient remediation of heavy metals in aquatic environment.

Gamma Radiation-Induced Oxidation, Doping, and Etching of Two-Dimensional MoS2 Crystals

Two-dimensional (2D) MoS2 is a promising material for future electronic and optoelectronic applications. 2D MoS2 devices have been shown to perform reliably under irradiation conditions relevant for a low Earth orbit. However, a systematic investigation of the stability of 2D MoS2 crystals under high-dose gamma irradiation is still missing. In this work, absorbed doses of up to 1000 kGy are administered to 2D MoS2. Radiation damage is monitored via optical microscopy and Raman, photoluminescence, and X-ray photoelectron spectroscopy techniques. After irradiation with 500 kGy dose, p-doping of the monolayer MoS2 is observed and attributed to the adsorption of O2 onto created vacancies. Extensive oxidation of the MoS2 crystal is attributed to reactions involving the products of adsorbate radiolysis. Edge-selective radiolytic etching of the uppermost layer in 2D MoS2 is attributed to the high reactivity of active edge sites. After irradiation with 1000 kGy, the monolayer MoS2 crystals appear to be completely etched. This holistic study reveals the previously unreported effects of high-dose gamma irradiation on the physical and chemical properties of 2D MoS2. Consequently, it demonstrates that radiation shielding, adsorbate concentrations, and required device lifetimes must be carefully considered, if devices incorporating 2D MoS2 are intended for use in high-dose radiation environments.

Exploring the electronic band gap of Janus MoSeO and WSeO monolayers and their heterostructures

Electronic band structure of TMSeO monolayers.

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS₂ grown by chemical vapor deposition. We evaporate thin metal films onto MoS₂ and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that (1) ultrathin oxidized Al dopes MoS₂ n-type (>2 × 10¹² cm^-2) without degrading its mobility, (2) Ag, Au, and Ni deposition causes varying levels of damage to MoS₂ (e.g. broadening Raman E' peak from <3 to >6 cm^-1), and (3) Ti, Sc, and Y react with MoS₂. Reactive metals must be avoided in contacts to monolayer MoS₂, but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that (4) thin metals do not significantly strain MoS₂, as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS₂ and broadly applicable to many other 2D semiconductors.

Atomic-Scale Carving of Nanopores into a van der Waals Heterostructure with Slow Highly Charged Ions

The growing family of 2D materials led not long ago to combining different 2D layers and building artificial systems in the form of van der Waals heterostructures. Tailoring of heterostructure properties postgrowth would greatly benefit from a modification technique with a monolayer precision. However, appropriate techniques for material modification with this precision are still missing. To achieve such control, slow highly charged ions appear ideal as they carry high amounts of potential energy, which is released rapidly upon ion neutralization at the position of the ion. The resulting potential energy deposition is thus limited to just a few atomic layers (in contrast to the kinetic energy deposition). Here, we irradiated a freestanding van der Waals MoS2/graphene heterostructure with 1.3 keV/amu xenon ions in high charge states of 38, which led to nanometer-sized pores that appear only in the MoS2 facing the ion beam, but not in graphene beneath the hole. Reversing the stacking order leaves both layers undamaged, which we attribute to the high conductivity and carrier mobility in graphene acting as a shield for the MoS2 underneath. Our main focus is here on monolayer MoS2, but we also analyzed areas with few-layer structures and observed that the perforation is limited to the two topmost MoS2 layers, whereas deeper layers remain intact. Our results demonstrate that in addition to already being a valuable tool for materials processing, the usability of ion irradiation can be extended to mono- (or bi)layer manipulation of van der Waals heterostructures when the localized potential energy deposition of highly charged ions is also added to the toolbox.

Freestanding and Supported MoS2 Monolayers under Cluster Irradiation: Insights from Molecular Dynamics Simulations

Two-dimensional (2D) materials with nanometer-size holes are promising systems for DNA sequencing, water purification, and molecule selection/separation. However, controllable creation of holes with uniform sizes and shapes is still a challenge, especially when the 2D material consists of several atomic layers as, e.g., MoS₂, the archetypical transition metal dichalcogenide. We use analytical potential molecular dynamics simulations to study the response of 2D MoS₂ to cluster irradiation. We model both freestanding and supported sheets and assess the amount of damage created in MoS₂ by the impacts of noble gas clusters in a wide range of cluster energies and incident angles. We show that cluster irradiation can be used to produce uniform holes in 2D MoS₂ with the diameter being dependent on cluster size and energy. Energetic clusters can also be used to displace sulfur atoms preferentially from either top or bottom layers of S atoms in MoS₂ and also clean the surface of MoS₂ sheets from adsorbents. Our results for MoS₂, which should be relevant to other 2D transition metal dichalcogenides, suggest new routes toward cluster beam engineering of devices based on 2D inorganic materials.

First principle investigation of the influence of sulfur vacancies on thermoelectric properties of single layered MoS2

Thermoelectric properties of single layered transition metal dichalchogenide MoS2 are investigated on the basis of ab initio calculations combined with Landauer formalism. The focus is made on sulfur vacancy defects that are experimentally observed to be largely present in materials especially in exfoliated two dimensional MoS2 compounds. The impact of these defects on phonon and electron transport properties is investigated here using a realistic description of their natural disordering. It is observed that phonons tend to localize around defects which induce a drastic reduction in thermal conductivity. For p type doping the figure of merit is almost insensitive to the defects while for n type doping the figure of merit rapidly tends to be zero for the increasing length of the system. These features are linked with a larger scattering of the electrons in the conduction band than that of holes in the valence band.

Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS2

Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS₂ by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS₂ upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.

Ultrafast Electron Cooling and Decay in Monolayer WS2 Revealed by Time- and Energy-Resolved Photoemission Electron Microscopy

A comprehensive understanding of the ultrafast electron dynamics in two-dimensional transition metal dichalcogenides (TMDs) is necessary for their applications in optoelectronic devices. In this work, we contribute a study of ultrafast electron cooling and decay dynamics in the supported and suspended monolayer WS₂ by time- and energy-resolved photoemission electron microscopy (PEEM). Electron cooling in the Q valley of the conduction band is clearly resolved in energy and time, on a time scale of 0.3 ps. Electron decay is mainly via a defect trapping process on a time scale of several picoseconds. We observed that the trap states can be produced and increased by laser illumination under an ultrahigh vacuum, and the higher local optical-field intensity led to the faster increase of trap states. The enhanced defect trapping could significantly modify the carrier dynamics and should be paid attention to in photoemission experiments for two-dimensional materials.

Changes in the Photoluminescence of Monolayer and Bilayer Molybdenum Disulfide during Laser Irradiation

Various postsynthesis processes for transition metal dichalcogenides have been attempted to control the layer number and defect concentration, on which electrical and optical properties strongly depend. In this work, we monitored changes in the photoluminescence (PL) of molybdenum disulfide (MoS2) until laser irradiation generated defects on the sample flake and completely etched it away. Higher laser power was required to etch bilayer MoS2 compared to monolayer MoS2. When the laser power was 270 μW with a full width at half-maximum of 1.8 μm on bilayer MoS2, the change in PL intensity over time showed a double maximum during laser irradiation due to a layer-by-layer etching of the flake. When the laser power was increased to 405 μW, however, both layers of bilayer MoS2 were etched all at once, which resulted in a single maximum in the change of PL intensity over time, as in the case of monolayer MoS2. The dependence of the etching pattern for bilayer MoS2 on laser power was also reflected in position changes of both exciton and trion PL peaks. The subtle changes in the PL spectra of MoS2 as a result of laser irradiation found here are discussed in terms of PL quantum efficiency, conversion between trions and excitons, mean interatomic spacing, and the screening of Coulomb interaction.

Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation

Defect engineering is important for tailoring the electronic and optical properties of two-dimensional materials, and the capability of generating defects of certain types at specific locations is meaningful for potential applications such as optoelectronics and quantum photonics. In this work, atomic defects are created in single-layer WSe2 using focused ion beam (FIB) irradiation, with defect densities spanning many orders of magnitude. The influences of defects are systematically characterized. Raman spectroscopy can only discern defects in WSe2 for a FIB dose higher than 1 × 1013 cm-2, which causes blue shifts of both A'1 and E' modes. Photoluminescence (PL) of WSe2 is more sensitive to defects. At cryogenic temperature, the low-energy PL induced by defects can be revealed, which shows redshifts and broadenings with increased FIB doses. Similar Raman shifts and PL spectrum changes are observed for the WSe2 film grown by chemical vapor deposition (CVD). A four microsecond-long lifetime is observed in the PL dynamics and is three orders of magnitude longer than the often observed delocalized exciton lifetime and becomes more dominant for WSe2 with increasing FIB doses. The ultra-long lifetime of PL in single-layer WSe2 is consistent with first-principles calculation results considering the creation of both chalcogen and metal vacancies by FIB, and can be valuable for photo-catalytic reactions, valleytronics and quantum light emissions owing to the longer carrier separation/manipulation time.

Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors

The effects of space radiation on the structural and electrical properties of MoS₂ field effect transistors (FETs) were investigated. The 1 MeV electronically equivalent International Space Station (ISS) track was used to apply fluence equivalent to the orbital for 10 (1.0 × 10¹² cm^-2) and 30 years (3.0 × 10¹² cm^-2) using the AP8 and AE8 models. X-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectra were recorded before and after irradiation. Electron irradiation produced strong desulfurization effects in MoS₂ FETs. The PL spectra before and after irradiation did not change significantly, while the [Formula: see text] and A_1g Raman modes were red- and blue-shifted, respectively. The XPS results demonstrated a strong desulfurization effect of the electron beam on MoS₂. This reduction indicates a much higher amount of irradiation-induced S vacancies compared to Mo vacancies. The electrical characteristics of the device were measured before and after irradiation. The increase in the channel leakage current after irradiation was attributed to the oxide trapping positive charges. MoS₂ FETs irradiated by the electron-beam demonstrated a decreased current. This phenomenon can be attributed to the combination of the states at the SiO₂/MoS₂ interfaces and Coulomb scattering. Our study provides a deeper understanding of the influence of 1 MeV electron-beam irradiation on MoS₂-based nano-electronic devices for future space applications.