Selective Engineering of Chalcogen Defects in MoS2 by Low-Energy Helium Plasma

Modification of WS2thin film properties using high dose gamma irradiation

The tunability of the transition metal dichalcogenide properties has gained attention from numerous researchers due to their wide application in various fields including quantum technology. In the present work, WS2has been deposited on fluorine doped tin oxide substrate and its properties have been studied systematically. These samples were irradiated using gamma radiation for various doses, and the effect on structural, morphological, optical and electrical properties has been reported. The crystallinity of the material is observed to be decreased, and the results are well supported by x-ray diffraction, Raman spectroscopy techniques. The increase in grain boundaries has been supported by the agglomeration observed in the scanning electron microscopy micrographs. The XPS results of WS2after gamma irradiation show evolution of oxygen, carbon, C=O, W-O and SO4-2peaks, confirming the addition of impurities and formation of point defect. The gamma irradiation creates point defects, and their density increases considerably with increasing gamma dosage. These defects crucially altered the structural, optical and electrical properties of the material. The reduction in the optical band gap with increased gamma irradiation is evident from the absorption spectra and respective Tauc plots. TheI-Vgraphs show a 1000-fold increase in the saturation current after 100 kGy gamma irradiation dose. This work has explored the gamma irradiation effect on the WS2and suggests substantial modification in the material and enhancement in electrical properties.

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS2

Defect engineering of van der Waals semiconductors has been demonstrated as an effective approach to manipulate the structural and functional characteristics toward dynamic device controls, yet correlations between physical properties with defect evolution remain underexplored. Using proton irradiation, we observe an enhanced exciton-to-trion conversion of the atomically thin WS₂. The altered excitonic states are closely correlated with nanopore induced atomic displacement, W nanoclusters, and zigzag edge terminations, verified by scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. Density functional theory calculation suggests that nanopores facilitate formation of in-gap states that act as sinks for free electrons to couple with excitons. The ion energy loss simulation predicts a dominating electron ionization effect upon proton irradiation, providing further evidence on band perturbations and nanopore formation without destroying the overall crystallinity. This study provides a route in tuning the excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering approach.

Real-Time Investigation of Sulfur Vacancy Generation and Passivation in Monolayer Molybdenum Disulfide via in situ X-ray Photoelectron Spectromicroscopy

Understanding the chemical and electronic properties of point defects in two-dimensional materials, as well as their generation and passivation, is essential for the development of functional systems, spanning from next-generation optoelectronic devices to advanced catalysis. Here, we use synchrotron-based X-ray photoelectron spectroscopy (XPS) with submicron spatial resolution to create sulfur vacancies (SVs) in monolayer MoS₂ and monitor their chemical and electronic properties in situ during the defect creation process. X-ray irradiation leads to the emergence of a distinct Mo 3d spectral feature associated with undercoordinated Mo atoms. Real-time analysis of the evolution of this feature, along with the decrease of S content, reveals predominant monosulfur vacancy generation at low doses and preferential disulfur vacancy generation at high doses. Formation of these defects leads to a shift of the Fermi level toward the valence band (VB) edge, introduction of electronic states within the VB, and formation of lateral pn junctions. These findings are consistent with theoretical predictions that SVs serve as deep acceptors and are not responsible for the ubiquitous n-type conductivity of MoS₂. In addition, we find that these defects are metastable upon short-term exposure to ambient air. By contrast, in situ oxygen exposure during XPS measurements enables passivation of SVs, resulting in partial elimination of undercoordinated Mo sites and reduction of SV-related states near the VB edge. Correlative Raman spectroscopy and photoluminescence measurements confirm our findings of localized SV generation and passivation, thereby demonstrating the connection between chemical, structural, and optoelectronic properties of SVs in MoS₂.

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.

Hole doping effect of MoS2 via electron capture of He+ ion irradiation

Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He⁺ ion irradiation: converting n-type MoS₂ to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He⁺ ion irradiation is valid for supported bilayer MoS₂; however, it is limited at supported monolayer MoS₂ because the charges on the underlying substrates transfer into the monolayer under the current condition for He⁺ ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He⁺ ion irradiation.

Generating large out-of-plane piezoelectric properties of atomically thin MoS2via defect engineering

We calculated the piezoelectric properties of asymmetrically defected MoS₂ using density functional theory. By creating uneven numbers of defects on either side of two-dimensional MoS₂, the out-of-plane centrosymmetry of the charge distribution is clearly broken, and the out-of-plane piezoelectric response is induced. The largest out-of-plane piezoelectric response is associated with the highest defect ratio for MoS₂ to be semiconducting. We calculated the critical defect density of the metal-insulator transition of the asymmetrically defected MoS₂ to be 9.90 × 10¹⁴ cm^-2 and chemical formula MoS_1.22. The d₃₃ of the multilayer of optimally defected MoS₂ is found to be greater than those of AlN and ZnO, and in the same order of magnitude as lead zirconate titanate. All two-dimensional transition metal dichalcogenides can in principle be fabricated as piezoelectric with this approach. The required defect engineering is readily available with various types of ion irradiation or plasma treatment. By controlling the dose of the ion, the defect ratio and hence the piezoelectricity can be tuned. Such asymmetrically defected transition metal dichalcogenides can easily be integrated into two-dimensional transition metal dichalcogenide based devices, which is hard for conventional piezoelectric thin films to rival.

Mechanistic Investigation of Molybdenum Disulfide Defect Photoluminescence Quenching by Adsorbed Metallophthalocyanines

Lattice defects play an important role in determining the optical and electrical properties of monolayer semiconductors such as MoS₂. Although the structures of various defects in monolayer MoS₂ are well studied, little is known about the nature of the fluorescent defect species and their interaction with molecular adsorbates. In this study, the quenching of the low-temperature defect photoluminescence (PL) in MoS₂ is investigated following the deposition of metallophthalocyanines (MPcs). The quenching is found to significantly depend on the identity of the phthalocyanine metal, with the quenching efficiency decreasing in the order CoPc > CuPc > ZnPc, and almost no quenching by metal-free H₂Pc is observed. Time-correlated single photon counting (TCSPC) measurements corroborate the observed trend, indicating a decrease in the defect PL lifetime upon MPc adsorption, and the gate voltage-dependent PL reveals the suppression of the defect emission even at large Fermi level shifts. Density functional theory modeling argues that the MPc complexes stabilize dark negatively charged defects over luminescent neutral defects through an electrostatic local gating effect. These results demonstrate the control of defect-based excited-state decay pathways via molecular electronic structure tuning, which has broad implications for the design of mixed-dimensional optoelectronic devices.

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.

Defect Engineering in Metastable Phases of Transition-Metal Dichalcogenides for Electrochemical Applications

Metastable metallic phases of transition-metal dichalcogenide (TMD) nanomaterials have displayed excellent performance and emerged as promising candidates for sustainable energy sources low-cost storage and conversion because of their two-dimensional (2D) layered structures and extraordinary physicochemical properties. In order to broaden the range of potential applications, defect engineering is applied to the metastable phases of TMDs for further improvement of their catalytic and electronic properties. According to some recent studies, effective introduction of defects without perturbing the interior conductivity contributes to the development of metastable TMDs. This review provides deep insights into recent progress in electrochemistry using defect engineering in the metastable phases of TMDs. After introducing the structures of metastable phases and methods for defect construction, significant developments in catalysis and energy storage applications are discussed to elucidate structure-function relationships. Key challenges and future directions for defect engineering in the metastable phases of TMDs are also highlighted in the conclusions.

Induced spin polarization in graphene via interactions with halogen doped MoS2 and MoSe2 monolayers by DFT calculations

Magnetic halogen doped MoX2 (X = S and Se) monolayers influenced the electronic structure of graphene through a proximity effect. This process was observed using state-of-the-art calculations. It was found that the substitution of a single chalcogen atom with a halogen atom (F, Cl, Br, and I) results in n-type doping of MoX2. An additional electron from the dopant is localized on binding orbitals with the nearest Mo atoms and leads to the formation of magnetism in the dichalcogenide layer. Detailed analysis of halogen doped MoX2/graphene heterostructures demonstrated the induction of spin polarization in graphene near the Fermi energy. Significant spin polarization near the Fermi energy and n-type doping were observed in the graphene layer of MoSe2/graphene heterostructures with MoSe2 doped with iodine. At the same time, fluorine-doped MoSe2 does not cause n-doping in graphene, while spin polarization still takes place. The possibility for the detection of the arrangement of the halogen impurities at the MoX2 basal plane even with the graphene layer deposited on top was demonstrated through STM measurements which will be undoubtedly useful for the fabrication of electronic schemes and elements based on the proposed heterostructures for their further application in nanoelectronics and spintronics.

Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors

One of the main limiting factors in the performance of devices based on two-dimensional (2D) materials is Fermi level pinning at the contacts, which creates Schottky barriers (SBs) that increase contact resistance and, for most transition metal dichalcogenides (TMDs), limit hole conduction. A promising method to mitigate these problems is surface charge transfer doping (SCTD), which places fixed charge at the surface of the material and thins the SBs by locally shifting the energy bands. We use a mild O₂ plasma to convert the top few layers of a given TMD into a substoichiometric oxide that serves as a p-type SCTD layer. A comprehensive experimental study, backed by TCAD simulations, involving MoS₂, MoSe₂, MoTe₂, WS₂, and WSe₂ flakes of various thicknesses exposed to different plasma times is used to investigate the underlying mechanisms responsible for SCTD. The surface charge at the top of the channel and the gate-modulated surface potential at the bottom are found to have competing effects on the channel potential, which results in a decrease in the doping-induced threshold shift and an increase in minimum OFF state current with increasing thickness. Additionally, an undoped channel region is shown to mitigate carrier injection issues in sufficiently thin flakes. Notably, the band movements underlying the SCTD effects are independent of the particular semiconductor material, SCTD strategy, and doping polarity. Consequently, our findings provide critical insights for the design of high-performance transistors for a wide range of materials and SCTD mechanisms including TMD devices with strong hole conduction.

Studying thermal transport in suspended monolayer molybdenum disulfide prepared by a nano-manipulator-assisted transfer method

The thermal transport of monolayer MoS₂, grown by chemical vapor deposition (CVD) method, was studied in this work. A novel approach was developed to transfer monolayer MoS₂ onto suspended microelectrothermal system device, where a nano-manipulator in a scanning electron microscope was employed to accomplish the feat. This nano-manipulator-assisted transferring gives a high sample yield with relatively good sample quality compared to the traditional wet/dry transfer methods. Temperature-dependent thermal conductivity of monolayer MoS₂ was measured by suspended-pads thermal bridge technique, with thermal conductivity value slightly lower than the exfoliated samples due to the phonon-defects scattering for CVD grown samples. Further extension of the current transfer method was demonstrated on few-layer graphite, where suspended graphite flakes that were free of surface ripples and with high thermal conductance were shown.

Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures

Atomically thin two-dimensional (2D) materials face significant energy barriers for synthesis and processing into functional metastable phases such as Janus structures. Here, the controllable implantation of hyperthermal species from pulsed laser deposition (PLD) plasmas is introduced as a top-down method to compositionally engineer 2D monolayers. The kinetic energies of Se clusters impinging on suspended monolayer WS₂ crystals were controlled in the <10 eV/atom range with in situ plasma diagnostics to determine the thresholds for selective top layer replacement of sulfur by selenium for the formation of high quality WSSe Janus monolayers at low (300 °C) temperatures and bottom layer replacement for complete conversion to WSe₂. Atomic-resolution electron microscopy and spectroscopy in tilted geometry confirm the WSSe Janus monolayer. Molecular dynamics simulations reveal that Se clusters implant to form disordered metastable alloy regions, which then recrystallize to form highly ordered structures, demonstrating low-energy implantation by PLD for the synthesis of 2D Janus layers and alloys of variable composition.

Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defect Engineering

Platinum diselenide (PtSe₂) is an emerging class of two-dimensional (2D) transition-metal dichalcogenide (TMD) crystals recently gaining substantial interest, owing to its extraordinary properties absent in conventional 2D TMD layers. Most interestingly, it exhibits a thickness-dependent semiconducting-to-metallic transition, i.e., thick 2D PtSe₂ layers, which are intrinsically metallic, become semiconducting with their thickness reduced below a certain point. Realizing both semiconducting and metallic phases within identical 2D PtSe₂ layers in a spatially well-controlled manner offers unprecedented opportunities toward atomically thin tailored electronic junctions, unattainable with conventional materials. In this study, beyond this thickness-dependent intrinsic semiconducting-to-metallic transition of 2D PtSe₂ layers, we demonstrate that controlled plasma irradiation can "externally" achieve such tunable carrier transports. We grew wafer-scale very thin (a few nm) 2D PtSe₂ layers by a chemical vapor deposition (CVD) method and confirmed their intrinsic semiconducting properties. We then irradiated the material with argon (Ar) plasma, which was intended to make it more semiconducting by thickness reduction. Surprisingly, we discovered a reversed transition of semiconducting to metallic, which is opposite to the prediction concerning their intrinsic thickness-dependent carrier transports. Through extensive structural and chemical characterization, we identified that the plasma irradiation introduces a large concentration of near-atomic defects and selenium (Se) vacancies in initially stoichiometric 2D PtSe₂ layers. Furthermore, we performed density functional theory (DFT) calculations and clarified that the band-gap energy of such defective 2D PtSe₂ layers gradually decreases with increasing defect concentration and dimensions, accompanying a large number of midgap energy states. This corroborative experimental and theoretical study decisively verifies the fundamental mechanism for this externally controlled semiconducting-to-metallic transition in large-area CVD-grown 2D PtSe₂ layers, greatly broadening their versatility for futuristic electronics.

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

First-principle calculations were employed to analyze the effects induced by vacancies of molybdenum (Mo) and sulfur (S) on the dielectric properties of few-layered MoS₂. We explored the combined effects of vacancies and dipole interactions on the dielectric properties of few-layered MoS₂. In the presence of dielectric screening, we investigated uniformly distributed Mo and S vacancies, and then considered the case of concentrated vacancies. Our results show that the dielectric screening remarkably depends on the distribution of vacancies owing to the polarization induced by the vacancies and on the interlayer distances. This conclusion was validated for a wide range of wide-gap semiconductors with different positions and distributions of vacancies, providing an effective and reliable method for calculating and predicting electrostatic screening of dimensionally reduced materials. We further provided a method for engineering the dielectric constant by changing the interlayer distance, tuning the number of vacancies and the distribution of vacancies in few-layered van der Waals materials for their application in nanodevices and supercapacitors.

Atomic Layer Deposition of High-Quality Al2O3 Thin Films on MoS2 with Water Plasma Treatment

Atomic layer deposition (ALD) of ultrathin dielectric films on two-dimensional (2D) materials for electronic device applications remains one of the key challenges because of the lack of dangling bonds on the 2D material surface. In this work, a new technique to deposit uniform and high-quality Al₂O₃ films with thickness down to 1.5 nm on MoS₂ is introduced. By treating the surface using water plasma prior to the ALD process, hydroxyl groups are introduced to the MoS₂ surface, facilitating the chemisorption of trimethylaluminum in a conventional water-based ALD system. Raman and X-ray photoelectron spectroscopy measurements show that the water plasma treatment does not induce noticeable material degradation. The deposited Al₂O₃ films show excellent device-related electrical performance characteristics, including low interface trap density and outstanding gate controllability.