1
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Wu X, Cao Z, Zhao T, Wu Y, Li Z, Doukas S, Lidorikis E, Xue Y, Liu L, Ghaebi O, Soavi G, Lu J, Ni Z, Wang J. High efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators. NANOSCALE HORIZONS 2024; 9:1372-1378. [PMID: 38895819 DOI: 10.1039/d4nh00160e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Graphene modulators are considered a potential solution for achieving high-efficiency light modulation, and graphene-silicon hybrid-integrated modulators are particularly favorable due to their CMOS compatibility and low cost. The exploitation of graphene modulator latent capabilities remains an ongoing endeavour to improve the modulation and energy efficiency. Here, high-efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators are realized using gold-assisted transfer. We fabricate and demonstrate a microscale thermo-optical modulator with a tuning efficiency of 0.037 nm mW-1 and a high heating performance of 67.4 K μm3 mW-1 on a small active area of 7.54 μm2 and a graphene electro-absorption modulator featuring a high speed data rate reaching 56 Gb s-1 and a low power consumption of 200 fJ per bit. These devices show superior performance compared to the state of the art devices in terms of high efficiency, low process complexity, and compact device footage, which can support the realization of high-performance graphene-silicon hybrid-integrated photonic circuits with CMOS compatibility.
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Affiliation(s)
- Xiaoxuan Wu
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Zhengyi Cao
- CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
| | - Tianxiang Zhao
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Yun Wu
- CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
| | - Zhonghui Li
- CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
| | - Spyros Doukas
- Department of Material Science and Engineering, University of Ioannina, GR 45110 Ioannina, Greece
| | - Elefterios Lidorikis
- Department of Material Science and Engineering, University of Ioannina, GR 45110 Ioannina, Greece
| | - Yu Xue
- State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310058, China
| | - Liu Liu
- State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310058, China
- Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
| | - Omid Ghaebi
- Institute of Solid State Physics, Friedrich Schiller University Jena, 07743 Jena, Germany
| | - Giancarlo Soavi
- Institute of Solid State Physics, Friedrich Schiller University Jena, 07743 Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Junpeng Lu
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Zhenhua Ni
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Junjia Wang
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
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2
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Akhavan S, Najafabadi AT, Mignuzzi S, Jalebi MA, Ruocco A, Paradisanos I, Balci O, Andaji-Garmaroudi Z, Goykhman I, Occhipinti LG, Lidorikis E, Stranks SD, Ferrari AC. Graphene-Perovskite Fibre Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400703. [PMID: 38824387 DOI: 10.1002/adma.202400703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 05/13/2024] [Indexed: 06/03/2024]
Abstract
The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, fibre PDs are prepared by combining rolled graphene layers and photoactive perovskites. Conductive fibres (~500 Ωcm-1) are made by rolling single-layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al2O3 and parylene C), another rolled SLG as a channel, and perovskite as photoactive component. The resulting gate-tunable PD has a response time~9ms, with an external responsivity~22kAW-1 at 488nm for a 1V bias. The external responsivity is two orders of magnitude higher, and the response time one order of magnitude faster, than state-of-the-art wearable fibre-based PDs. Under bending at 4mm radius, up to~80% photocurrent is maintained. Washability tests show~72% of initial photocurrent after 30 cycles, promising for wearable applications.
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Affiliation(s)
- S Akhavan
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
| | - A Taheri Najafabadi
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
| | - S Mignuzzi
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
| | - M Abdi Jalebi
- Cavendish Laboratory, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0HE, UK
| | - A Ruocco
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
- Optical Networks Group, University College London, London, WC1E 6BT, UK
| | - I Paradisanos
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
| | - O Balci
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
| | - Z Andaji-Garmaroudi
- Cavendish Laboratory, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0HE, UK
| | - I Goykhman
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
- Technion - Israel Institute of Technology, Haifa, 3200003, Israel
| | - L G Occhipinti
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
| | - E Lidorikis
- Department of Materials Science and Engineering, University of Ioannina, Ioannina, 45110, Greece
| | - S D Stranks
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
| | - A C Ferrari
- Cambridge Graphene Centre, University of Cambridge, JJ Thompson Avenue, Cambridge, CB3 0FA, UK
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3
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Wu Q, Qian J, Wang Y, Xing L, Wei Z, Gao X, Li Y, Liu Z, Liu H, Shu H, Yin J, Wang X, Peng H. Waveguide-integrated twisted bilayer graphene photodetectors. Nat Commun 2024; 15:3688. [PMID: 38693107 PMCID: PMC11063206 DOI: 10.1038/s41467-024-47925-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Accepted: 04/16/2024] [Indexed: 05/03/2024] Open
Abstract
Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W-1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s-1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.
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Affiliation(s)
- Qinci Wu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Jun Qian
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Luwen Xing
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
- School of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Ziyi Wei
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Yurui Li
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Hongtao Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
| | - Haowen Shu
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Jianbo Yin
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Xingjun Wang
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
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4
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Malesys V, Andrieux-Ledier A, Lavenus P, Simon L. Building a cm 2scale CVD graphene-based gas sensor: modelling the kinetic with a three-site adsorption/desorption Langmuir model. NANOTECHNOLOGY 2024; 35:285501. [PMID: 38579693 DOI: 10.1088/1361-6528/ad3b02] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Accepted: 04/05/2024] [Indexed: 04/07/2024]
Abstract
In this article, we aim to develop and study a highly sensitive and selective cm2scale graphene-based gas sensor. We present the technology used to fabricate sensors which integrate monolayer chemical vapour deposition graphene: photolithography and transfer of layers. Characterization techniques (optical microscopy, AFM, micro-Raman spectroscopy, transport electrical measurements) ensure a diagnosis of graphene ribbons and allow good reproducibility of technological processes. We present the results of gas characterizations after a 200 ppm NO2exposure. We propose a novel approach for the modelling of the sensor response with a three-site adsorption/desorption Langmuir model. This innovative way of modelling the sensor response should provide a better understanding of the sensor's kinetic and help to overcome the long response time observed with graphene gas sensors.
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Affiliation(s)
- V Malesys
- Institut de Sciences des Matériaux de Mulhouse, CNRS-UMR 7361, Université de Haute Alsace, Mulhouse, France
| | | | - P Lavenus
- DPHY, ONERA, Université Paris Saclay, Châtillon, France
| | - L Simon
- Institut de Sciences des Matériaux de Mulhouse, CNRS-UMR 7361, Université de Haute Alsace, Mulhouse, France
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5
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Zhu Y, Zhang J, Cheng T, Tang J, Duan H, Hu Z, Shao J, Wang S, Wei M, Wu H, Li A, Li S, Balci O, Shinde SM, Ramezani H, Wang L, Lin L, Ferrari AC, Yakobson BI, Peng H, Jia K, Liu Z. Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308802. [PMID: 37878366 DOI: 10.1002/adma.202308802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Revised: 10/05/2023] [Indexed: 10/26/2023]
Abstract
Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm2 V-1 s-1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region.
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Affiliation(s)
- Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Ting Cheng
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Jilin Tang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Hongwei Duan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jiaxin Shao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Mingyue Wei
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Ang Li
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Sheng Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Osman Balci
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Sachin M Shinde
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Hamideh Ramezani
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Luda Wang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Boris I Yakobson
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
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6
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Convertino D, Nencioni M, Russo L, Mishra N, Hiltunen VM, Bertilacchi MS, Marchetti L, Giacomelli C, Trincavelli ML, Coletti C. Interaction of graphene and WS 2 with neutrophils and mesenchymal stem cells: implications for peripheral nerve regeneration. NANOSCALE 2024; 16:1792-1806. [PMID: 38175567 DOI: 10.1039/d3nr04927b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Graphene and bidimensional (2D) materials have been widely used in nerve conduits to boost peripheral nerve regeneration. Nevertheless, the experimental and commercial variability in graphene-based materials generates graphene forms with different structures and properties that can trigger entirely diverse biological responses from all the players involved in nerve repair. Herein, we focus on the graphene and tungsten disulfide (WS2) interaction with non-neuronal cell types involved in nerve tissue regeneration. We synthesize highly crystalline graphene and WS2 with scalable techniques such as thermal decomposition and chemical vapor deposition. The materials were able to trigger the activation of a neutrophil human model promoting Neutrophil Extracellular Traps (NETs) production, particularly under basal conditions, although neutrophils were not able to degrade graphene. Of note is that pristine graphene acts as a repellent for the NET adhesion, a beneficial property for nerve conduit long-term applications. Mesenchymal stem cells (MSCs) have been proposed as a promising strategy for nerve regeneration in combination with a conduit. Thus, the interaction of graphene with MSCs was also investigated, and reduced viability was observed only on specific graphene substrates. Overall, the results confirm the possibility of regulating the cell response by varying graphene properties and selecting the most suitable graphene forms.
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Affiliation(s)
- Domenica Convertino
- Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, Pisa, Italy.
| | - Martina Nencioni
- Department of Pharmacy, University of Pisa, Via Bonanno 6, Pisa, Italy.
| | - Lara Russo
- Department of Pharmacy, University of Pisa, Via Bonanno 6, Pisa, Italy.
| | - Neeraj Mishra
- Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, Pisa, Italy.
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, Genova, Italy
| | - Vesa-Matti Hiltunen
- Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, Pisa, Italy.
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, Genova, Italy
| | | | - Laura Marchetti
- Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, Pisa, Italy.
- Department of Pharmacy, University of Pisa, Via Bonanno 6, Pisa, Italy.
| | - Chiara Giacomelli
- Department of Pharmacy, University of Pisa, Via Bonanno 6, Pisa, Italy.
| | | | - Camilla Coletti
- Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, Pisa, Italy.
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, Genova, Italy
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7
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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8
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Wu C, Reep T, Brems S, Jussot J, Mootheri V, Van Campenhout J, Huyghebaert C, Pantouvaki M, Wang Z, Van Thourhout D. High-efficiency dual single layer graphene modulator integrated on slot waveguides. OPTICS EXPRESS 2023; 31:36872-36882. [PMID: 38017828 DOI: 10.1364/oe.503140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 09/28/2023] [Indexed: 11/30/2023]
Abstract
This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impressive modulation efficiency (0.038 dBµm-1V-1) and bandwidth (≈ 16 GHz). Starting from these results, we carried out an extensive design study, focusing on three crucial design parameters and exploring the associated trade-offs in insertion loss, extinction ratio and bandwidth. The simulation results offer valuable insights into the influence of each design parameter, reaffirming that our slot waveguide platform holds great promise for realizing a high-performance EAM balancing optical and electrical performance. It is important to note that the slot waveguide was defined through standard deep ultraviolet (DUV) lithography, allowing seamless integration into high-density systems.
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9
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Montanaro A, Piccinini G, Mišeikis V, Sorianello V, Giambra MA, Soresi S, Giorgi L, D'Errico A, Watanabe K, Taniguchi T, Pezzini S, Coletti C, Romagnoli M. Sub-THz wireless transmission based on graphene-integrated optoelectronic mixer. Nat Commun 2023; 14:6471. [PMID: 37833246 PMCID: PMC10575943 DOI: 10.1038/s41467-023-42194-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 10/03/2023] [Indexed: 10/15/2023] Open
Abstract
Optoelectronics is a valuable solution to scale up wireless links frequency to sub-THz in the next generation antenna systems and networks. Here, we propose a low-power consumption, small footprint building block for 6 G and 5 G new radio wireless transmission allowing broadband capacity (e.g., 10-100 Gb/s per link and beyond). We demonstrate a wireless datalink based on graphene, reaching setup limited sub-THz carrier frequency and multi-Gbit/s data rate. Our device consists of a graphene-based integrated optoelectronic mixer capable of mixing an optically generated reference oscillator approaching 100 GHz, with a baseband electrical signal. We report >96 GHz optoelectronic bandwidth and -44 dB upconversion efficiency with a footprint significantly smaller than those of state-of-the-art photonic transmitters (i.e., <0.1 mm2). These results are enabled by an integrated-photonic technology based on wafer-scale high-mobility graphene and pave the way towards the development of optoelectronics-based arrayed-antennas for millimeter-wave technology.
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Affiliation(s)
- Alberto Montanaro
- Photonic Networks and Technologies Lab - CNIT, Via G. Moruzzi,1, 56124, Pisa, Italy.
- TeCIP Institute, Scuola Superiore Sant'Anna, via G. Moruzzi 1, 56124, Pisa, Italy.
| | - Giulia Piccinini
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127, Pisa, Italy
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127, Pisa, Italy
| | - Vaidotas Mišeikis
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127, Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163, Genova, Italy
| | - Vito Sorianello
- Photonic Networks and Technologies Lab - CNIT, Via G. Moruzzi,1, 56124, Pisa, Italy
| | - Marco A Giambra
- Inphotec, CamGraPhIC srl, via G. Moruzzi 1, 56124, Pisa, Italy
| | - Stefano Soresi
- Inphotec, CamGraPhIC srl, via G. Moruzzi 1, 56124, Pisa, Italy
| | - Luca Giorgi
- Ericsson Research, via G. Moruzzi 1, 56124, Pisa, Italy
| | | | - K Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - T Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Sergio Pezzini
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, P.zza S. Silvestro 12, 56127, Pisa, Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127, Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163, Genova, Italy
| | - Marco Romagnoli
- Photonic Networks and Technologies Lab - CNIT, Via G. Moruzzi,1, 56124, Pisa, Italy
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10
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Wu C, Ku C, Yu M, Yang J, Wu P, Huang C, Lu T, Huang J, Ishii S, Chen K. Near-Field Photodetection in Direction Tunable Surface Plasmon Polaritons Waveguides Embedded with Graphene. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302707. [PMID: 37661570 PMCID: PMC10602515 DOI: 10.1002/advs.202302707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 08/06/2023] [Indexed: 09/05/2023]
Abstract
2D materials have manifested themselves as key components toward compact integrated circuits. Because of their capability to circumvent the diffraction limit, light manipulation using surface plasmon polaritons (SPPs) is highly-valued. In this study, plasmonic photodetection using graphene as a 2D material is investigated. Non-scattering near-field detection of SPPs is implemented via monolayer graphene stacked under an SPP waveguide with a symmetric antenna. Energy conversion between radiation power and electrical signals is utilized for the photovoltaic and photoconductive processes of the gold-graphene interface and biased electrodes, measuring a maximum photoresponsivity of 29.2 mA W-1 . The generated photocurrent is altered under the polarization state of the input light, producing a 400% contrast between the maximum and minimum signals. This result is universally applicable to all on-chip optoelectronic circuits.
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Affiliation(s)
- Chia‐Hung Wu
- College of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Chih‐Jen Ku
- Institute of Imaging and Biomedical PhotonicsCollege of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Min‐Wen Yu
- College of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Jhen‐Hong Yang
- College of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Pei‐Yuan Wu
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu300Taiwan
| | - Chen‐Bin Huang
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu300Taiwan
| | - Tien‐Chang Lu
- Department of PhotonicsCollege of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Jer‐Shing Huang
- Leibniz Institute of Photonic TechnologyAlbert‐Einstein Straße 907745JenaGermany
- Institute of Physical Chemistry and Abbe Center of PhotonicsFriedrich‐Schiller‐Universität JenaHelmholtzweg 4D‐07743JenaGermany
- Research Center for Applied SciencesAcademia Sinica128 Academia Road, Sec. 2, Nankang DistrictTaipei11529Taiwan
- Department of ElectrophysicsNational Yang Ming Chiao Tung UniversityNo. 1001 Daxue Rd, East DistrictHsinchu30010Taiwan
| | - Satoshi Ishii
- Research Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science (NIMS)1‐1 NamikiTsukubaIbaraki305‐0044Japan
| | - Kuo‐Ping Chen
- Institute of Imaging and Biomedical PhotonicsCollege of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu300Taiwan
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11
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Martini L, Mišeikis V, Esteban D, Azpeitia J, Pezzini S, Paletti P, Ochapski MW, Convertino D, Hernandez MG, Jimenez I, Coletti C. Scalable High-Mobility Graphene/hBN Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:37794-37801. [PMID: 37523768 PMCID: PMC10416142 DOI: 10.1021/acsami.3c06120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 07/17/2023] [Indexed: 08/02/2023]
Abstract
Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available SiO2/Si and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition on copper. The structural, chemical, and electronic properties of the heterostructure were investigated by atomic force microscopy, Raman spectroscopy, and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding 10,000 cm2/Vs in ambient conditions, 30% higher than those directly measured on SiO2/Si. We prove the scalability of our approach by measuring more than 100 transfer length method devices over a centimeter scale, which present an average carrier mobility of 7500 ± 850 cm2/Vs. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.
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Affiliation(s)
- Leonardo Martini
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy
| | - David Esteban
- Instituto
de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones
Científicas, E-28049 Madrid, Spain
| | - Jon Azpeitia
- Instituto
de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones
Científicas, E-28049 Madrid, Spain
| | - Sergio Pezzini
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Paolo Paletti
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy
| | - Michał W. Ochapski
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy
| | - Domenica Convertino
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Mar Garcia Hernandez
- Instituto
de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones
Científicas, E-28049 Madrid, Spain
| | - Ignacio Jimenez
- Instituto
de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones
Científicas, E-28049 Madrid, Spain
| | - Camilla Coletti
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy
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12
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Venanzi T, Graziotto L, Macheda F, Sotgiu S, Ouaj T, Stellino E, Fasolato C, Postorino P, Mišeikis V, Metzelaars M, Kögerler P, Beschoten B, Coletti C, Roddaro S, Calandra M, Ortolani M, Stampfer C, Mauri F, Baldassarre L. Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy. PHYSICAL REVIEW LETTERS 2023; 130:256901. [PMID: 37418733 DOI: 10.1103/physrevlett.130.256901] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Accepted: 05/15/2023] [Indexed: 07/09/2023]
Abstract
We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at K, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D^{'} peaks with respect to that measured in graphite. Comparing with fully ab initio theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two-dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature.
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Affiliation(s)
- Tommaso Venanzi
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Lorenzo Graziotto
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Francesco Macheda
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
| | - Simone Sotgiu
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Taoufiq Ouaj
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Elena Stellino
- Department of Physics and Geology, University of Perugia, via Alessandro Pascoli, 06123 Perugia, Italy
| | - Claudia Fasolato
- Institute for Complex System, National Research Council (ISC-CNR), 00185 Rome, Italy
| | - Paolo Postorino
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Vaidotas Mišeikis
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
- Istituto Italiano di Tecnologia, Center for Nanotechnology Innovation @NEST, Piazza San Silvestro, 12-56126 Pisa, Italy
| | - Marvin Metzelaars
- Institute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany
| | - Paul Kögerler
- Institute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany
| | - Bernd Beschoten
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Camilla Coletti
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
- Istituto Italiano di Tecnologia, Center for Nanotechnology Innovation @NEST, Piazza San Silvestro, 12-56126 Pisa, Italy
| | - Stefano Roddaro
- Department of Physics, University of Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
| | - Matteo Calandra
- Department of Physics, University of Trento, Via Sommarive 14, 38123 Povo, Italy
| | - Michele Ortolani
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Christoph Stampfer
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Francesco Mauri
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
| | - Leonetta Baldassarre
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
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13
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Sorianello V, Montanaro A, Giambra MA, Ligato N, Templ W, Galli P, Romagnoli M. Graphene Photonics I/Q Modulator for Advanced Modulation Formats. ACS PHOTONICS 2023; 10:1446-1453. [PMID: 37215326 PMCID: PMC10197173 DOI: 10.1021/acsphotonics.3c00015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Indexed: 05/24/2023]
Abstract
Starting from its classical domain of long distance links, optical communication is conquering new application areas down to chip-to-chip interconnections in response to the ever-increasing demand for higher bandwidth. The use of coherent modulation formats, typically employed in long-haul systems, is now debated to be extended to short links to increase the bandwidth density. Next-generation transceivers are targeting high bandwidth, high energy efficiency, compact footprint, and low cost. Integrated photonics is the only technology to reach this goal, and silicon photonics is expected to play the leading actor. However, silicon modulators have some limits, in terms of bandwidth and footprint. Graphene is an ideal material to be integrated with silicon photonics to meet the requirements of next generation transceivers. This material provides optimal properties: high mobility, fast carrier dynamics and ultrabroadband optical properties. Graphene photonics for direct detection systems based on binary modulation formats have been demonstrated so far, including electro-absorption modulators, phase modulators, and photodetectors. However, coherent modulation for increased data-rates has not yet been reported for graphene photonics yet. In this work, we present the first graphene photonics I/Q modulator based on four graphene on silicon electro-absorption modulators for advanced modulation formats and demonstrate quadrature phase shift keying (QPSK) modulation up to 40 Gb/s.
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Affiliation(s)
- Vito Sorianello
- Photonic
Networks and Technologies Lab − CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Alberto Montanaro
- Photonic
Networks and Technologies Lab − CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- Tecip
Institute − Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | | | - Nadia Ligato
- INPHOTEC,
CamGraPhIC srl, Via G.
Moruzzi 1, 56124 Pisa, Italy
| | - Wolfgang Templ
- Nokia
Bell Laboratories, Magirusstr. 10, 70469 Stuttgart, Germany
| | - Paola Galli
- Nokia
Solutions and Networks Italia, via Energy Park 14, 20871 Vimercate, Italy
| | - Marco Romagnoli
- Photonic
Networks and Technologies Lab − CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
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14
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Lanza M, Hui F, Wen C, Ferrari AC. Resistive Switching Crossbar Arrays Based on Layered Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205402. [PMID: 36094019 DOI: 10.1002/adma.202205402] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm- 2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2 ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
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Affiliation(s)
- Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Chao Wen
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
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15
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Abrantes M, Rodrigues D, Domingues T, Nemala SS, Monteiro P, Borme J, Alpuim P, Jacinto L. Ultrasensitive dopamine detection with graphene aptasensor multitransistor arrays. J Nanobiotechnology 2022; 20:495. [DOI: 10.1186/s12951-022-01695-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Accepted: 11/01/2022] [Indexed: 11/26/2022] Open
Abstract
AbstractDetecting physiological levels of neurotransmitters in biological samples can advance our understanding of brain disorders and lead to improved diagnostics and therapeutics. However, neurotransmitter sensors for real-world applications must reliably detect low concentrations of target analytes from small volume working samples. Herein, a platform for robust and ultrasensitive detection of dopamine, an essential neurotransmitter that underlies several brain disorders, based on graphene multitransistor arrays (gMTAs) functionalized with a selective DNA aptamer is presented. High-yield scalable methodologies optimized at the wafer level were employed to integrate multiple graphene transistors on small-size chips (4.5 × 4.5 mm). The multiple sensor array configuration permits independent and simultaneous replicate measurements of the same sample that produce robust average data, reducing sources of measurement variability. This procedure allowed sensitive and reproducible dopamine detection in ultra-low concentrations from small volume samples across physiological buffers and high ionic strength complex biological samples. The obtained limit-of-detection was 1 aM (10–18) with dynamic detection ranges spanning 10 orders of magnitude up to 100 µM (10–8), and a 22 mV/decade peak sensitivity in artificial cerebral spinal fluid. Dopamine detection in dopamine-depleted brain homogenates spiked with dopamine was also possible with a LOD of 1 aM, overcoming sensitivity losses typically observed in ion-sensitive sensors in complex biological samples. Furthermore, we show that our gMTAs platform can detect minimal changes in dopamine concentrations in small working volume samples (2 µL) of cerebral spinal fluid samples obtained from a mouse model of Parkinson’s Disease. The platform presented in this work can lead the way to graphene-based neurotransmitter sensors suitable for real-world academic and pre-clinical pharmaceutical research as well as clinical diagnosis.
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16
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Hwang E, Choi J, Hong S. Emerging laser-assisted vacuum processes for ultra-precision, high-yield manufacturing. NANOSCALE 2022; 14:16065-16076. [PMID: 36278425 DOI: 10.1039/d2nr03649e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Laser technology is a cutting-edge process with a unique photothermal response, precise site selectivity, and remote controllability. Laser technology has recently emerged as a novel tool in the semiconductor, display, and thin film industries by providing additional capabilities to existing high-vacuum equipment. The in situ and in operando laser assistance enables using multiple process environments with a level of complexity unachievable with conventional vacuum equipment. This broadens the usable range of process parameters and directly improves material properties, product precision, and device performance. This review paper examines the recent research trends in laser-assisted vacuum processes (LAVPs) as a vital tool for innovation in next-generation manufacturing processing equipment and addresses the unique characteristics and mechanisms of lasers exclusively used in each study. All the findings suggest that the LAVP can lead to methodological breakthroughs in dry etching, 2D material synthesis, and chemical vapor deposition for optoelectronic devices.
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Affiliation(s)
- Eunseung Hwang
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
| | - Joonmyung Choi
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
| | - Sukjoon Hong
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
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17
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Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation. Nat Commun 2022; 13:5410. [PMID: 36109519 PMCID: PMC9477858 DOI: 10.1038/s41467-022-33135-w] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 09/02/2022] [Indexed: 11/11/2022] Open
Abstract
The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO2/Si exhibited high carrier mobility reaching up ~10,000 cm2 V−1 s−1, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm2 V−1 s−1. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics. Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.
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18
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Zulqurnain M, Burton OJ, Al-Hada M, Goff LE, Hofmann S, Hirst LC. Defect seeded remote epitaxy of GaAs films on graphene. NANOTECHNOLOGY 2022; 33:485603. [PMID: 35977453 DOI: 10.1088/1361-6528/ac8a4f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 08/15/2022] [Indexed: 06/15/2023]
Abstract
Remote epitaxy is an emerging materials synthesis technique which employs a 2D interface layer, often graphene, to enable the epitaxial deposition of low defect single crystal films while restricting bonding between the growth layer and the underlying substrate. This allows for the subsequent release of the epitaxial film for integration with other systems and reuse of growth substrates. This approach is applicable to material systems with an ionic component to their bonding, making it notably appealing for III-V alloys, which are a technologically important family of materials. Chemical vapour deposition growth of graphene and wet transfer to a III-V substrate with a polymer handle is a potentially scalable and low cost approach to producing the required growth surface for remote epitaxy of these materials, however, the presence of water promotes the formation of a III-V oxide layer, which degrades the quality of subsequently grown epitaxial films. This work demonstrates the use of an argon ion beam for the controlled introduction of defects in a monolayer graphene interface layer to enable the growth of a single crystal GaAs film by molecular beam epitaxy, despite the presence of a native oxide at the substrate/graphene interface. A hybrid mechanism of defect seeded lateral overgrowth with remote epitaxy contributing the coalescence of the film is indicated. The exfoliation of the GaAs films reveals the presence of defect seeded nucleation sites, highlighting the need to balance the benefits of defect seeding on crystal quality against the requirement for subsequent exfoliation of the film, for future large area development of this approach.
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Affiliation(s)
- Muhammad Zulqurnain
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Oliver J Burton
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Mohamed Al-Hada
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
| | - Lucy E Goff
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Louise C Hirst
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS United Kingdom
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19
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Li X, Chen X, Wei N, Chen C, Yang Z, Xie H, He J, Dong N, Dan Y, Wang J. Nonlinear absorption and integrated photonics applications of MoSSe. OPTICS EXPRESS 2022; 30:32924-32936. [PMID: 36242344 DOI: 10.1364/oe.465566] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Accepted: 08/12/2022] [Indexed: 06/16/2023]
Abstract
This study explores the wavelength-dependent and pulse-width-dependent nonlinear optical properties of liquid-phase exfoliated molybdenum sulfide selenide (MoSSe) nanosheets. The saturable absorption response of MoSSe nanosheets in the visible region is better than that in the near-infrared region, and the response under 6-ns pulse excitation is better than that of a 380-fs pulse. Furthermore, based on the first-principles calculations, we designed a phase modulator and optimized its structure by integrating a monolayer MoSSe into a silicon slot waveguide. The simulation results revealed that the phase shift could achieve a high optical extinction. Consequently, MoSSe exhibits satisfactory nonlinear optical properties and an excellent potential for applications in optoelectronic devices.
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20
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Jiang H, Zhao Y, Ma H, Wu Y, Chen M, Wang M, Zhang W, Peng Y, Leng Y, Cao Z, Shao J. Broad-Band Ultrafast All-Optical Switching Based on Enhanced Nonlinear Absorption in Corrugated Indium Tin Oxide Films. ACS NANO 2022; 16:12878-12888. [PMID: 35905035 DOI: 10.1021/acsnano.2c05139] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ultrafast all-optical switches based on epsilon-near-zero (ENZ)-enhanced nonlinear refraction in transparent conducting oxides have achieved exciting results in realizing large absolute modulations. However, broad-band, polarization-independent, and wide-angle ultrafast all-optical switches have been challenging to produce, due to the inherent narrow band, polarization-dependent, and angle-dependent characteristics of the ENZ effect. To this end, we propose an ultrafast all-optical switch based on the enhanced nonlinear absorption of corrugated indium tin oxide (ITO) thin films. Taking advantage of the perfect absorption and localized field enhancement of the ENZ and localized surface plasmon resonance modes, we significantly enhanced the nonlinear absorption of the corrugated ITO film in the 1450-1650 nm telecom band. The experimental results show that the nonlinear saturable absorption coefficient of the corrugated ITO film at 1450 nm was as high as -1.5 × 105 cm GW-1, enabling all-optical switching to obtain an extinction ratio of 14.32 dB and an ultrafast switching time of 350 fs at a pump fluence of 18.51 mJ cm-2. Furthermore, the all-optical switch achieved an extinction ratio of over 15 dB and an insertion loss of approximately 2.6 dB within the 200 nm absorption band and exhibited polarization-independent and wide-angle features. The ultrafast temporal response can be attributed to intraband transient bleaching of the corrugated ITO film. Our findings demonstrate that corrugated ENZ films can overcome the inherent narrow-band, polarization-dependent, and angle-dependent problems of natural ENZ materials without increasing the response time, making them a potential ENZ ultrafast all-optical switching material platform.
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Affiliation(s)
- Hang Jiang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Yuanan Zhao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Hao Ma
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Yi Wu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Meiling Chen
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Mengxia Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Weili Zhang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Yujie Peng
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Zhaoliang Cao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Jianda Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, People's Republic of China
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21
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Piccinini G, Mišeikis V, Novelli P, Watanabe K, Taniguchi T, Polini M, Coletti C, Pezzini S. Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene. NANO LETTERS 2022; 22:5252-5259. [PMID: 35776918 PMCID: PMC9284678 DOI: 10.1021/acs.nanolett.2c01114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-uniform moiré potential. Via low-temperature dual-gated magnetotransport, we demonstrate the hallmarks of a 2.4°-twisted superlattice, including tunable regimes of interlayer coupling, reduced Fermi velocity, large interlayer capacitance, and density-independent Brown-Zak oscillations. The observation of these moiré-induced electrical transport features establishes CVD-based twisted bilayer graphene as an alternative to "tear-and-stack" exfoliated flakes for fundamental studies, while serving as a proof-of-concept for future large-scale assembly.
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Affiliation(s)
- Giulia Piccinini
- NEST,
Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Pietro Novelli
- Istituto
Italiano di Tecnologia, Via Melen 83, 16152 Genova, Italy
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Marco Polini
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Fisica, Università di Pisa, Largo Bruno Pontecorvo 3, 56127 Pisa, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Pezzini
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
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22
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Vangelidis I, Bellas DV, Suckow S, Dabos G, Castilla S, Koppens FHL, Ferrari AC, Pleros N, Lidorikis E. Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors. ACS PHOTONICS 2022; 9:1992-2007. [PMID: 35726242 PMCID: PMC9204831 DOI: 10.1021/acsphotonics.2c00100] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Indexed: 05/10/2023]
Abstract
Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs-1) light detection at low (<pJbit-1) power consumption, in devices compatible with Si processing, so that the monolithic integration of electro-optical materials and electronics can be achieved consistently at the wafer scale. Graphene-based photodetectors can meet these criteria, thanks to their broadband absorption, ultra-high mobility, ultra-fast electron interactions, and strong photothermoelectric effect. High responsivities (∼ 1 A/W), however, have only been demonstrated in biased configurations, which introduce dark current, noise, and power consumption, while unbiased schemes, with low noise and zero consumption, have remained in the ∼ 0.1 A/W regime. Here, we consider the unbiased asymmetric configuration and show that optimized plasmonic enhanced devices can reach for both transverse-electric and transverse-magnetic modes (at λ = 1550 nm), ∼A/W responsivity, and ∼ 100 GHz operation speed at zero power consumption. We validate the model and material parameters by simulating experimental devices and derive analytical expressions for the responsivity. Our comprehensive modeling paves the way for efficient, fast, and versatile optical detection in PICs with zero power consumption.
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Affiliation(s)
- Ioannis Vangelidis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
| | - Dimitris V. Bellas
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Strasse 25, Aachen 52074, Germany
| | - George Dabos
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Sebastián Castilla
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Frank H. L. Koppens
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA
- Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Nikos Pleros
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Elefterios Lidorikis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- University
Research Center of Ioannina (URCI), Institute of Materials Science
and Computing, Ioannina 45110, Greece
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23
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Yang H, Wang G, Guo Y, Wang L, Tan B, Zhang S, Zhang X, Zhang J, Shuai Y, Lin J, Jia D, Hu P. Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs. NANOSCALE 2022; 14:4204-4215. [PMID: 35234771 DOI: 10.1039/d1nr06004j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.
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Affiliation(s)
- Huihui Yang
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Yanming Guo
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Australia
| | - Biying Tan
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Shichao Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Xin Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Jia Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Dechang Jia
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
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24
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Xu M, Cai X. Advances in integrated ultra-wideband electro-optic modulators [Invited]. OPTICS EXPRESS 2022; 30:7253-7274. [PMID: 35299491 DOI: 10.1364/oe.449022] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2021] [Accepted: 01/29/2022] [Indexed: 06/14/2023]
Abstract
Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.
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25
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Tyagi A, Mišeikis V, Martini L, Forti S, Mishra N, Gebeyehu ZM, Giambra MA, Zribi J, Frégnaux M, Aureau D, Romagnoli M, Beltram F, Coletti C. Ultra-clean high-mobility graphene on technologically relevant substrates. NANOSCALE 2022; 14:2167-2176. [PMID: 35080556 DOI: 10.1039/d1nr05904a] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 cm2 V-1 s-1 at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO2/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene doping and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility μh up to ∼9000 cm2 V-1 s-1 and electron mobility μe up to ∼8000 cm2 V-1 s-1, with average values μh ∼ 7500 cm2 V-1 s-1 and μe ∼ 6300 cm2 V-1 s-1. The carrier mobility of ultraclean graphene reaches values nearly double than those measured in graphene processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics.
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Affiliation(s)
- Ayush Tyagi
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.
| | - Vaidotas Mišeikis
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Leonardo Martini
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.
| | - Stiven Forti
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.
| | - Neeraj Mishra
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Zewdu M Gebeyehu
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | | | - Jihene Zribi
- Institut Lavoisier de Versailles UMR 8180 Université Paris-Saclay, UVSQ, CNRS, 78035 Versailles, France
| | - Mathieu Frégnaux
- Institut Lavoisier de Versailles UMR 8180 Université Paris-Saclay, UVSQ, CNRS, 78035 Versailles, France
| | - Damien Aureau
- Institut Lavoisier de Versailles UMR 8180 Université Paris-Saclay, UVSQ, CNRS, 78035 Versailles, France
| | - Marco Romagnoli
- Photonic Networks and Technologies Lab, CNIT, 56124 Pisa, Italy
| | - Fabio Beltram
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
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26
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Abstract
With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.
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27
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Ciampalini G, Fabbri F, Menichetti G, Buoni L, Pace S, Mišeikis V, Pitanti A, Pisignano D, Coletti C, Tredicucci A, Roddaro S. Unexpected Electron Transport Suppression in a Heterostructured Graphene-MoS 2 Multiple Field-Effect Transistor Architecture. ACS NANO 2022; 16:1291-1300. [PMID: 34939407 PMCID: PMC8793137 DOI: 10.1021/acsnano.1c09131] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 12/17/2021] [Indexed: 06/14/2023]
Abstract
We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors (FETs), and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with those of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition. The heterojunction was investigated by scanning Raman and photoluminescence spectroscopies. Moreover, transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. On the basis of ab initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counterintuitively depends on the field effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel.
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Affiliation(s)
- Gaia Ciampalini
- Dipartimento
di Fisica “E. Fermi”, Università
di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16 163 Genova, Italy
- NEST,
CNR—Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Filippo Fabbri
- NEST,
CNR—Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Guido Menichetti
- Dipartimento
di Fisica “E. Fermi”, Università
di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16 163 Genova, Italy
| | - Luca Buoni
- Dipartimento
di Fisica “E. Fermi”, Università
di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
| | - Simona Pace
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16 163 Genova, Italy
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Vaidotas Mišeikis
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16 163 Genova, Italy
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Alessandro Pitanti
- NEST,
CNR—Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Dario Pisignano
- Dipartimento
di Fisica “E. Fermi”, Università
di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
- NEST,
CNR—Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Camilla Coletti
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16 163 Genova, Italy
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Alessandro Tredicucci
- Dipartimento
di Fisica “E. Fermi”, Università
di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
- NEST,
CNR—Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56 127 Pisa, Italy
| | - Stefano Roddaro
- Dipartimento
di Fisica “E. Fermi”, Università
di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
- NEST,
CNR—Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56 127 Pisa, Italy
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28
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Graphene on Silicon Photonics: Light Modulation and Detection for Cutting-Edge Communication Technologies. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app12010313] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Graphene—a two-dimensional allotrope of carbon in a single-layer honeycomb lattice nanostructure—has several distinctive optoelectronic properties that are highly desirable in advanced optical communication systems. Meanwhile, silicon photonics is a promising solution for the next-generation integrated photonics, owing to its low cost, low propagation loss and compatibility with CMOS fabrication processes. Unfortunately, silicon’s photodetection responsivity and operation bandwidth are intrinsically limited by its material characteristics. Graphene, with its extraordinary optoelectronic properties has been widely applied in silicon photonics to break this performance bottleneck, with significant progress reported. In this review, we focus on the application of graphene in high-performance silicon photonic devices, including modulators and photodetectors. Moreover, we explore the trend of development and discuss the future challenges of silicon-graphene hybrid photonic devices.
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Asgari M, Riccardi E, Balci O, De Fazio D, Shinde SM, Zhang J, Mignuzzi S, Koppens FHL, Ferrari AC, Viti L, Vitiello MS. Chip-Scalable, Room-Temperature, Zero-Bias, Graphene-Based Terahertz Detectors with Nanosecond Response Time. ACS NANO 2021; 15:17966-17976. [PMID: 34706194 PMCID: PMC8613901 DOI: 10.1021/acsnano.1c06432] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Accepted: 10/12/2021] [Indexed: 06/01/2023]
Abstract
The scalable synthesis and transfer of large-area graphene underpins the development of nanoscale photonic devices ideal for new applications in a variety of fields, ranging from biotechnology, to wearable sensors for healthcare and motion detection, to quantum transport, communications, and metrology. We report room-temperature zero-bias thermoelectric photodetectors, based on single- and polycrystal graphene grown by chemical vapor deposition (CVD), tunable over the whole terahertz range (0.1-10 THz) by selecting the resonance of an on-chip patterned nanoantenna. Efficient light detection with noise equivalent powers <1 nWHz-1/2 and response time ∼5 ns at room temperature are demonstrated. This combination of specifications is orders of magnitude better than any previous CVD graphene photoreceiver operating in the sub-THz and THz range. These state-of-the-art performances and the possibility of upscaling to multipixel architectures on complementary metal-oxide-semiconductor platforms are the starting points for the realization of cost-effective THz cameras in a frequency range still not covered by commercially available microbolometer arrays.
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Affiliation(s)
- Mahdi Asgari
- NEST,
CNR - Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127, Pisa, Italy
| | - Elisa Riccardi
- NEST,
CNR - Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127, Pisa, Italy
| | - Osman Balci
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Domenico De Fazio
- ICFO-Institut
de Ciencies Fotoniques, Mediterranean Technology Park, 08860, Castelldefels, Barcelona, Spain
| | - Sachin M. Shinde
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Jincan Zhang
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Sandro Mignuzzi
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Frank H. L. Koppens
- ICFO-Institut
de Ciencies Fotoniques, Mediterranean Technology Park, 08860, Castelldefels, Barcelona, Spain
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Leonardo Viti
- NEST,
CNR - Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127, Pisa, Italy
| | - Miriam S. Vitiello
- NEST,
CNR - Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127, Pisa, Italy
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La Mura M, Lamberti P, Tucci V. Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors. NANOMATERIALS 2021; 11:nano11113121. [PMID: 34835885 PMCID: PMC8624492 DOI: 10.3390/nano11113121] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Revised: 11/05/2021] [Accepted: 11/17/2021] [Indexed: 11/16/2022]
Abstract
The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.
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31
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High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene. Nat Commun 2021; 12:4307. [PMID: 34262029 PMCID: PMC8280191 DOI: 10.1038/s41467-021-24233-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2020] [Accepted: 06/02/2021] [Indexed: 11/21/2022] Open
Abstract
It is challenging for conventional top-down lithography to fabricate reproducible devices very close to atomic dimensions, whereas identical molecules and very similar nanoparticles can be made bottom-up in large quantities, and can be self-assembled on surfaces. The challenge is to fabricate electrical contacts to many such small objects at the same time, so that nanocrystals and molecules can be incorporated into conventional integrated circuits. Here, we report a scalable method for contacting a self-assembled monolayer of nanoparticles with a single layer of graphene. This produces single-electron effects, in the form of a Coulomb staircase, with a yield of 87 ± 13% in device areas ranging from < 800 nm2 to 16 μm2, containing up to 650,000 nanoparticles. Our technique offers scalable assembly of ultra-high densities of functional particles or molecules that could be used in electronic integrated circuits, as memories, switches, sensors or thermoelectric generators. The integration of nano-molecules into microelectronic circuitry is challenging. Here, the authors provide a scalable method for contacting a self-assembled monolayer of nanoparticles with a single layer of graphene that produces single-electron effects, in the form of a Coulomb staircase, with a yield of at least 70%.
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Schuler S, Muench JE, Ruocco A, Balci O, Thourhout DV, Sorianello V, Romagnoli M, Watanabe K, Taniguchi T, Goykhman I, Ferrari AC, Mueller T. High-responsivity graphene photodetectors integrated on silicon microring resonators. Nat Commun 2021; 12:3733. [PMID: 34145226 PMCID: PMC8213857 DOI: 10.1038/s41467-021-23436-x] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 04/14/2021] [Indexed: 02/05/2023] Open
Abstract
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the current GPDs' low responsivity when compared to conventional PDs. Here we overcome this by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve >90% light absorption in a ~6 μm SLG channel along a Si waveguide. Cavity-enhanced light-matter interactions cause carriers in SLG to reach ~400 K for an input power ~0.6 mW, resulting in a voltage responsivity ~90 V/W, with a receiver sensitivity enabling our GPDs to operate at a 10-9 bit-error rate, on par with mature semiconductor technology, but with a natural generation of a voltage, rather than a current, thus removing the need for transimpedance amplification, with a reduction of energy-per-bit, cost, and foot-print.
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Affiliation(s)
- S Schuler
- Vienna University of Technology, Institute of Photonics, Vienna, Austria
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - J E Muench
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - A Ruocco
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - O Balci
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - D van Thourhout
- Ghent University-IMEC, Photonics Research Group, Gent, Belgium
| | - V Sorianello
- Consorzio Nazionale per le Telecomunicazioni and Inphotec, Pisa, Italy
| | - M Romagnoli
- Consorzio Nazionale per le Telecomunicazioni and Inphotec, Pisa, Italy
| | - K Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | - T Taniguchi
- National Institute for Materials Science, Tsukuba, Japan
| | - I Goykhman
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Technion-Israel Institute of Technology, Haifa, Israel
| | - A C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
| | - T Mueller
- Vienna University of Technology, Institute of Photonics, Vienna, Austria.
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Liu C, Guo J, Yu L, Li J, Zhang M, Li H, Shi Y, Dai D. Silicon/2D-material photodetectors: from near-infrared to mid-infrared. LIGHT, SCIENCE & APPLICATIONS 2021; 10:123. [PMID: 34108443 PMCID: PMC8190178 DOI: 10.1038/s41377-021-00551-4] [Citation(s) in RCA: 69] [Impact Index Per Article: 23.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 04/21/2021] [Accepted: 05/06/2021] [Indexed: 05/06/2023]
Abstract
Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.
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Affiliation(s)
- Chaoyue Liu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Jingshu Guo
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Laiwen Yu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Jiang Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Ming Zhang
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China
| | - Huan Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Yaocheng Shi
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China
| | - Daoxin Dai
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China.
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China.
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Graphene overcoats for ultra-high storage density magnetic media. Nat Commun 2021; 12:2854. [PMID: 34001870 PMCID: PMC8129078 DOI: 10.1038/s41467-021-22687-y] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2019] [Accepted: 03/17/2021] [Indexed: 02/03/2023] Open
Abstract
Hard disk drives (HDDs) are used as secondary storage in digital electronic devices owing to low cost and large data storage capacity. Due to the exponentially increasing amount of data, there is a need to increase areal storage densities beyond ~1 Tb/in2. This requires the thickness of carbon overcoats (COCs) to be <2 nm. However, friction, wear, corrosion, and thermal stability are critical concerns below 2 nm, limiting current technology, and restricting COC integration with heat assisted magnetic recording technology (HAMR). Here we show that graphene-based overcoats can overcome all these limitations, and achieve two-fold reduction in friction and provide better corrosion and wear resistance than state-of-the-art COCs, while withstanding HAMR conditions. Thus, we expect that graphene overcoats may enable the development of 4-10 Tb/in2 areal density HDDs when employing suitable recording technologies, such as HAMR and HAMR+bit patterned media.
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Optoelectronic mixing with high-frequency graphene transistors. Nat Commun 2021; 12:2728. [PMID: 33980859 PMCID: PMC8115296 DOI: 10.1038/s41467-021-22943-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2019] [Accepted: 03/29/2021] [Indexed: 02/03/2023] Open
Abstract
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (EF). At low EF (<130 meV), a positive photocurrent is generated, while at large EF (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.).
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