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Gu J, Shen Y, Tian S, Xue Z, Meng X. Recent Advances in Nanowire-Based Wearable Physical Sensors. BIOSENSORS 2023; 13:1025. [PMID: 38131785 PMCID: PMC10742341 DOI: 10.3390/bios13121025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 12/06/2023] [Accepted: 12/08/2023] [Indexed: 12/23/2023]
Abstract
Wearable electronics is a technology that closely integrates electronic devices with the human body or clothing, which can realize human-computer interaction, health monitoring, smart medical, and other functions. Wearable physical sensors are an important part of wearable electronics. They can sense various physical signals from the human body or the surrounding environment and convert them into electrical signals for processing and analysis. Nanowires (NW) have unique properties such as a high surface-to-volume ratio, high flexibility, high carrier mobility, a tunable bandgap, a large piezoresistive coefficient, and a strong light-matter interaction. They are one of the ideal candidates for the fabrication of wearable physical sensors with high sensitivity, fast response, and low power consumption. In this review, we summarize recent advances in various types of NW-based wearable physical sensors, specifically including mechanical, photoelectric, temperature, and multifunctional sensors. The discussion revolves around the structural design, sensing mechanisms, manufacture, and practical applications of these sensors, highlighting the positive role that NWs play in the sensing process. Finally, we present the conclusions with perspectives on current challenges and future opportunities in this field.
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Affiliation(s)
| | | | | | - Zhaoguo Xue
- National Key Laboratory of Strength and Structural Integrity, School of Aeronautic Science and Engineering, Beihang University, Beijing 100191, China
| | - Xianhong Meng
- National Key Laboratory of Strength and Structural Integrity, School of Aeronautic Science and Engineering, Beihang University, Beijing 100191, China
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2
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Xu R, Xu K, Sun Y, Wen Y, Cheng L, Shen FC, Qian Y. Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity. NANOSCALE 2023; 15:18473-18480. [PMID: 37941430 DOI: 10.1039/d3nr03924b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Indium antimonide nanowires (InSb NWs) are attractive building-block candidates for bottom-up construction of high-efficiency electronics and optoelectronics due to their narrow direct band gap, fast room temperature carrier mobilities and small exciton binding energy. However, InSb NWs synthesized by the vapor-liquid-solution (VLS) mechanism generally suffer from an increased carrier and phonon scattering rate, which is thought to be caused by randomly distributed crystal defects along the NW growth direction. In this study, by utilizing the recently developed low-temperature, solution-processed technique, these crystal defects were successfully suppressed by periodically distributed twin planes to form twinned InSb nanowires. Importantly, measurements of the electrical transport properties of field effect transistors (FETs) reveal that the InSb NWs exhibit a hole-dominated conductivity with room temperature mobilities of up to 50.71 cm2 V-1 s-1, which is distinctly contrary to the intrinsic n-type InSb NWs. This observation of n-p switching behavior is probably attributed to the surface band bending effect with regard to the Fermi energy level, which is caused by surface oxide trap states arising from the native-oxide layer at the surface of the InSb NWs. All these results illustrate that the as-prepared colloidal InSb NWs can potentially be used as p-type materials for integration with next-generation nanoscale electronics and optoelectronics via surface engineering.
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Affiliation(s)
- Rui Xu
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University, Wuhu, Anhui, 241000, P. R. China.
| | - Kaijia Xu
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University, Wuhu, Anhui, 241000, P. R. China.
| | - Yingzhi Sun
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University, Wuhu, Anhui, 241000, P. R. China.
| | - Yan Wen
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University, Wuhu, Anhui, 241000, P. R. China.
| | - Lanjun Cheng
- School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Feng-Cui Shen
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University, Wuhu, Anhui, 241000, P. R. China.
| | - Yinyin Qian
- Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University, Wuhu, Anhui, 241000, P. R. China.
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3
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Marnauza M, Sjökvist R, Lehmann S, Dick KA. Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy. J Phys Chem Lett 2023; 14:7404-7410. [PMID: 37566795 PMCID: PMC10461298 DOI: 10.1021/acs.jpclett.3c01928] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Accepted: 08/10/2023] [Indexed: 08/13/2023]
Abstract
Several nanowire properties are strongly dependent on their diameter, which is notoriously difficult to control for III-Sb nanowires compared with other III-V nanowires. Herein environmental transmission electron microscopy is utilized to study the growth of Au nanoparticle seeded GaSb nanowires in situ. In this study, the real time changes to morphology and nanoparticle composition as a result of precursor V/III ratio are investigated. For a wide range of the growth parameters, it is observed that decreasing the V/III ratio increases the nanoparticle volume through Ga accumulation in the nanoparticle. The increase in nanoparticle volume in turn forces the nanowire diameter to expand. The effect of the V/III ratio on diameter allows the engineering of diameter modulated nanowires, where the modulation persisted after the growth. Lastly, this study demonstrates the observed trends can be reproduced in a conventional ex situ system, highlighting the transferability and importance of the results obtained in situ.
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Affiliation(s)
- Mikelis Marnauza
- Centre for Analysis and Synthesis, Lund University, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Robin Sjökvist
- Centre for Analysis and Synthesis, Lund University, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Sebastian Lehmann
- NanoLund, Lund University, 22100 Lund, Sweden
- Solid State Physics, Lund University, 22100 Lund, Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
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4
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Islam ASMJ, Hasan MS, Islam MS, Bhuiyan AG, Stampfl C, Park J. Crystal orientation-dependent tensile mechanical behavior and deformation mechanisms of zinc-blende ZnSe nanowires. Sci Rep 2023; 13:3532. [PMID: 36864111 PMCID: PMC9981763 DOI: 10.1038/s41598-023-30601-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 02/27/2023] [Indexed: 03/04/2023] Open
Abstract
Crystal deformation mechanisms and mechanical behaviors in semiconductor nanowires (NWs), in particular ZnSe NWs, exhibit a strong orientation dependence. However, very little is known about tensile deformation mechanisms for different crystal orientations. Here, the dependence of crystal orientations on mechanical properties and deformation mechanisms of zinc-blende ZnSe NWs are explored using molecular dynamics simulations. We find that the fracture strength of [111]-oriented ZnSe NWs shows a higher value than that of [110] and [100]-oriented ZnSe NWs. Square shape ZnSe NWs show greater value in terms of fracture strength and elastic modulus compared to a hexagonal shape at all considered diameters. With increasing temperature, the fracture stress and elastic modulus exhibit a sharp decrease. It is observed that the {111} planes are the deformation planes at lower temperatures for the [100] orientation; conversely, when the temperature is increased, the {100} plane is activated and contributes as the second principal cleavage plane. Most importantly, the [110]-directed ZnSe NWs show the highest strain rate sensitivity compared to the other orientations due to the formation of many different cleavage planes with increasing strain rates. The calculated radial distribution function and potential energy per atom further validates the obtained results. This study is very important for the future development of efficient and reliable ZnSe NWs-based nanodevices and nanomechanical systems.
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Affiliation(s)
- A. S. M. Jannatul Islam
- grid.443078.c0000 0004 0371 4228Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, 9203 Bangladesh
| | - Md. Sayed Hasan
- grid.443078.c0000 0004 0371 4228Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, 9203 Bangladesh
| | - Md. Sherajul Islam
- grid.443078.c0000 0004 0371 4228Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, 9203 Bangladesh
| | - Ashraful G. Bhuiyan
- grid.443078.c0000 0004 0371 4228Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, 9203 Bangladesh
| | - Catherine Stampfl
- grid.1013.30000 0004 1936 834XSchool of Physics, The University of Sydney, Sydney, NSW 2006 Australia
| | - Jeongwon Park
- grid.266818.30000 0004 1936 914XDepartment of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557 USA ,grid.28046.380000 0001 2182 2255School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5 Canada
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5
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Yan X, Liu Y, Zha C, Zhang X, Zhang Y, Ren X. Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications. NANOSCALE 2023; 15:3032-3050. [PMID: 36722935 DOI: 10.1039/d2nr06421a] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, non-〈111〉-oriented semiconductor nanowires have attracted increasing interest in terms of fundamental research and promising applications due to their outstanding crystal quality and distinctive physical properties. Here, a comprehensive overview of recent advances in the study of non-〈111〉-oriented semiconductor nanowires is presented. We start by introducing various growth techniques for obtaining nanowires with certain orientations, for which the growth energetics and kinetics are discussed. Attention is then given to the physical properties of non-〈111〉 nanowires, as predicted by theoretical calculations or demonstrated experimentally. After that, we review the advantages and challenges of non-〈111〉 nanowires as building blocks for electronic and optoelectronic devices. Finally, we discuss the possible challenges and opportunities in the research field of non-〈111〉 semiconductor nanowires.
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Affiliation(s)
- Xin Yan
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Yuqing Liu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Chaofei Zha
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Xia Zhang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Yunyan Zhang
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Xiaomin Ren
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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6
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Zhang K, Ren Z, Cao H, Li L, Wang Y, Zhang W, Li Y, Yang H, Meng Y, Ho JC, Wei Z, Shen G. Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays. ACS NANO 2022; 16:8128-8140. [PMID: 35511070 DOI: 10.1021/acsnano.2c01455] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 102 A/W and an ultrahigh detectivity of 1.10 × 1011 Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.
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Affiliation(s)
- Kai Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
- Institute of Physics, Chinese Academy of Sciences and University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhihui Ren
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelxsectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Huichen Cao
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Lingling Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ying Wang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Wei Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Yubao Li
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Haitao Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - You Meng
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guozhen Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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7
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Liu D, Liu F, Liu Y, Pang Z, Zhuang X, Yin Y, Dong S, He L, Tan Y, Liao L, Chen F, Yang ZX. Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200415. [PMID: 35257494 DOI: 10.1002/smll.202200415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Indexed: 06/14/2023]
Abstract
The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the Ilight /Idark ratio is improved to 103 and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.
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Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Shengpan Dong
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University Changsha, Changsha, 410082, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
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8
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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9
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Zhu Z, Jönsson A, Liu YP, Svensson J, Timm R, Wernersson LE. Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:531-538. [PMID: 35098137 PMCID: PMC8793030 DOI: 10.1021/acsaelm.1c01134] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 12/30/2021] [Indexed: 05/17/2023]
Abstract
Sb-based semiconductors are critical p-channel materials for III-V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. In this study, we achieve improved electrostatics of vertical GaSb nanowire p-channel MOSFETs by employing robust digital etch (DE) schemes, prior to high-κ deposition. Two different processes, based on buffer-oxide etcher (BOE) 30:1 and HCl:IPA 1:10, are compared. We demonstrate that water-based BOE 30:1, which is a common etchant in Si-based CMOS process, gives an equally controllable etching for GaSb nanowires compared to alcohol-based HCl:IPA, thereby realizing III-V on Si with the same etchant selection. Both DE chemicals show good interface quality of GaSb with a substantial reduction in Sb oxides for both etchants while the HCl:IPA resulted in a stronger reduction in the Ga oxides, as determined by X-ray photoelectron spectroscopy and in agreement with the electrical characterization. By implementing these DE schemes into vertical GaSb nanowire MOSFETs, a subthreshold swing of 107 mV/dec is obtained in the HCl:IPA pretreated sample, which is state of the art compared to reported Sb-based MOSFETs, suggesting a potential of Sb-based p-type devices for all-III-V CMOS technologies.
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Affiliation(s)
- Zhongyunshen Zhu
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
| | - Adam Jönsson
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
| | - Yen-Po Liu
- Division
of Synchrotron Radiation Research, Department of Physics, and NanoLund, Lund University, P.O.
Box 117, 221 00 Lund, Sweden
| | - Johannes Svensson
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
| | - Rainer Timm
- Division
of Synchrotron Radiation Research, Department of Physics, and NanoLund, Lund University, P.O.
Box 117, 221 00 Lund, Sweden
| | - Lars-Erik Wernersson
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
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10
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Sutter E, Sutter P. Ultrathin Twisted Germanium Sulfide van der Waals Nanowires by Bismuth Catalyzed Vapor-Liquid-Solid Growth. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104784. [PMID: 34655159 DOI: 10.1002/smll.202104784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Revised: 09/18/2021] [Indexed: 06/13/2023]
Abstract
1D nanowires of 2D layered crystals are emerging nanostructures synthesized by combining van der Waals (vdW) epitaxy and vapor-liquid-solid (VLS) growth. Nanowires of the group IV monochalcogenide germanium sulfide (GeS) are of particular interest for twistronics due to axial screw dislocations giving rise to Eshelby twist and precision interlayer twist at helical vdW interfaces. Ultrathin vdW nanowires have not been realized, and it is not clear if confining layered crystals into extremely thin wires is even possible. If axial screw dislocations are still stable, ultrathin vdW nanowires can reach large twists and should display significant quantum confinement. Here it is shown that VLS growth over Bi catalysts yields vdW nanowires down to ≈15 nm diameter while maintaining tens of µm length. Combined electron microscopy and diffraction demonstrate that ultrathin GeS nanowires crystallize in the orthorhombic bulk structure but can realize nonequilibrium stacking that may lead to 1D ferroelectricity. Ultrathin nanowires carry screw dislocations, remain chiral, and achieve very high twist rates. Whenever the dislocation extends to the nanowire tip, it continues into the Bi catalyst. Eshelby twist analysis demonstrates that the ultrathin nanowires follow continuum predictions. Cathodoluminescence on individual nanowires, finally, shows pronounced emission blue shifts consistent with quantum confinement.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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11
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Li Z, Yan HJ, Liu X, Liu S, Feng M, Wang X, Yan B, Xue DJ. Surface-Defect States in Photovoltaic Absorber GeSe. J Phys Chem Lett 2021; 12:10249-10254. [PMID: 34648285 DOI: 10.1021/acs.jpclett.1c02813] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
GeSe is an emerging promising light-harvesting material for photovoltaics due to its excellent optoelectronic properties, nontoxic and earth-abundant constituents, and high stability. In particular, perovskite-like antibonding states at the valence band maximum arising from Ge-4s and Se-4p coupling enable the bulk-defect-tolerant properties in GeSe. However, a fundamental understanding of surface-defect states in GeSe, another important factor for high-performance photovoltaics, is still lacking. Here, we investigate the surface-defect properties of GeSe through first-principle calculations. We find that different from common semiconductors possessing numerous surface dangling bonds, some GeSe surfaces are prone to reconstruction, thus eliminating the dangling bonds. The rearranged armchair edges exhibit unexpected benign defect properties, similar to those of bulk GeSe, arising from the formation of bulk-like [GeSe3] tetrahedrons. We further show that the stable exposed (111) surfaces are hard to reconstruct due to the stiff structure but are effectively passivated by the addition of H.
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Affiliation(s)
- Zongbao Li
- School of Material and Chemical Engineering, Institute of Cultural and Technological Industry Innovation of Tongren, Tongren University, Tongren 554300, China
| | - Hui-Juan Yan
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Xinsheng Liu
- Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China
| | - Shunchang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingjie Feng
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China
| | - Xia Wang
- School of Material and Chemical Engineering, Institute of Cultural and Technological Industry Innovation of Tongren, Tongren University, Tongren 554300, China
| | - Bin Yan
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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12
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Sun J, Zhuang X, Fan Y, Guo S, Cheng Z, Liu D, Yin Y, Tian Y, Pang Z, Wei Z, Song X, Liao L, Chen F, Ho JC, Yang ZX. Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102323. [PMID: 34288454 DOI: 10.1002/smll.202102323] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 06/27/2021] [Indexed: 06/13/2023]
Abstract
The relative low hole mobility of p-channel building block device challenges the continued miniaturization of modern electronic chips. Metal-semiconductor junction is always an efficient strategy to control the carrier concentration of channel semiconductor, benefiting the carrier mobility regulation of building block device. In this work, complementary metal oxide semiconductor (CMOS)-compatible metals are selected to deposit on the surface of the important p-channel building block of GaSb nanowire field-effect-transistors (NWFETs), demonstrating the efficient strategy of hole mobility enhancement by metal-semiconductor junction. When deposited with lower work function metal of Al, the peak hole mobility of GaSb NWFET can be enhanced to as high as ≈3372 cm2 V-1 s-1 , showing three times than the un-deposited one. The as-studied metal-semiconductor junction is also efficient for the hole mobility enhancement of other p-channel devices, such as GaAs NWFET, GaAs film FET, and WSe2 FET. With the enhanced mobility, the as-constructed CMOS inverter shows good invert characteristics, showing a relatively high gain of ≈18.1. All results may be regarded as important advances to the next-generation electronics.
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Affiliation(s)
- Jiamin Sun
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Xinming Zhuang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yibo Fan
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Shuai Guo
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Zichao Cheng
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dong Liu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Yanxue Yin
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yufeng Tian
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhiyong Pang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Xiufeng Song
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Feng Chen
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zai-Xing Yang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
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13
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Zhao S, Sun J, Yin Y, Guo Y, Liu D, Miao C, Feng X, Wang Y, Xu M, Yang ZX. In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity. J Phys Chem Lett 2021; 12:3046-3052. [PMID: 33739121 DOI: 10.1021/acs.jpclett.1c00540] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The negative photoconductivity (NPC) effect originating from the surface shell layer has been considered as an efficient approach to improve the performance of optoelectronic nanodevices. However, a scientific design and precise growth of NPC-effect-caused shell during nanowire (NW) growth process for achieving high-performance photodetectors are still lacking. In this work, GeS NWs with a controlled sulfur-rich shell, diameter, and length are successfully prepared by a simple chemical vapor deposition method. As checked by transmission electron microscopy, the thickness of the sulfur-rich shell ranges from 10.5 ± 1.5 to 13.4 ± 2.5 nm by controlling the NW growth time. The composition of the sulfur-rich shell is studied by X-ray photoelectron spectroscopy, showing the decrease of S in the GeSx shell from the surface to core. When configured into the well-known phototransistor, a featured NPC effect is observed, benefiting the high-performance photodetector with high responsivity of 105 A·W-1 and detectivity of 1012 Jones for λ = 405 nm with ultralow intensity of 0.04 mW·cm-2. However, the thicker-shell NW phototransistor shows an unstable photodetector behavior with smaller negative photocurrent because of more hole-trapping states in the thicker shell. All results suggest a careful design and controlled growth of an NPC-effect-caused shell for future optoelectronic applications.
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Affiliation(s)
- Shuai Zhao
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Jiamin Sun
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yanxue Yin
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanan Guo
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Dong Liu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Chengcheng Miao
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiao Feng
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yiming Wang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mingsheng Xu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zai-Xing Yang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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14
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Lan C, Yip S, Kang X, Meng Y, Bu X, Ho JC. Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:56330-56337. [PMID: 33287538 DOI: 10.1021/acsami.0c17317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Because of the excellent electrical properties, III-V semiconductor nanowires are promising building blocks for next-generation electronics; however, their rich surface states inevitably contribute large amounts of charge traps, leading to gate bias stress instability and hysteresis characteristics in nanowire field-effect transistors (FETs). Here, we investigated thoroughly the gate bias stress and hysteresis effects in InAs nanowire FETs. It is observed that the output current decreases together with the threshold voltage shifting to the positive direction when a positive gate bias stress is applied, and vice versa for the negative gate bias stress. For double-sweep transfer characteristics, the significant hysteresis behavior is observed, depending heavily on the sweeping rate and range. On the basis of complementary investigations of these devices, charge traps are confirmed to be the dominant factor for these instability effects. Importantly, the hysteresis can be simulated well by utilizing a combination of the rate equation for electron density and the empirical model for electron mobility. This provides an accurate evaluation of carrier mobility, which is in distinct contrast to the overestimation of mobility when using the transconductance for calculation. All these findings are important for understanding the charge trap dynamics to further enhance the device performance of nanowire FETs.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | | | | | | | | | - Johnny C Ho
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, P. R. China
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15
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Wang H, Wang A, Wang Y, Yang Z, Yang J, Han N, Chen Y. Nonpolar GaAs Nanowires Catalyzed by Cu 5As 2: Insights into As Layer Epitaxy. ACS OMEGA 2020; 5:30963-30970. [PMID: 33324804 PMCID: PMC7726767 DOI: 10.1021/acsomega.0c03817] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2020] [Accepted: 10/15/2020] [Indexed: 05/10/2023]
Abstract
Controlled synthesis of GaAs nanowires (NWs) with specific phases and orientations is important and challenging, which determines their electronic performances. Herein, single-crystalline GaAs NWs are successfully synthesized by using complementary metal-oxide semiconductor compatible Cu2O catalysts via chemical vapor deposition at an optimized temperature of 560 °C. In contrast to typically Au catalyzed GaAs NWs, the Cu2O catalyzed ones are found to grow along nonpolar orientations of zincblende <110> and <211> and wurtzite <1̅100> and <2̅110>. The Cu2O catalysts are found to change into orthorhombic Cu5As2 after the NW growth, which is also significantly distinguished from the Au-Ga catalyst alloy in the literature. The Cu5As2 alloy plays the epitaxy role in the nonpolar GaAs NW growth due to the lattice matching with the nonpolar planes of GaAs, which is verified by the atomic stack model. These nonpolar oriented GaAs NWs have minimized stacking faults, promising for the other semiconductor synthesis as well as electronic applications.
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Affiliation(s)
- Hang Wang
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School
of Metallurgical Engineering, Xi’an
University of Architecture and Technology, Xi’an 710055, P. R. China
| | - Anqi Wang
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center
for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, P. R. China
| | - Ying Wang
- Department
of Physics, School of Science, Beijing Jiaotong
University, Beijing 100044, P. R. China
| | - Zaixing Yang
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, P. R. China
| | - Jun Yang
- School
of Metallurgical Engineering, Xi’an
University of Architecture and Technology, Xi’an 710055, P. R. China
- . Tel.: +86-13152420820
| | - Ning Han
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center
for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, P. R. China
- . Tel.: 86-10-62558356
| | - Yunfa Chen
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center
for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, P. R. China
- . Tel.: 86-10-82544896
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16
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Dzhigaev D, Svensson J, Krishnaraja A, Zhu Z, Ren Z, Liu Y, Kalbfleisch S, Björling A, Lenrick F, Balogh ZI, Hammarberg S, Wallentin J, Timm R, Wernersson LE, Mikkelsen A. Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction. NANOSCALE 2020; 12:14487-14493. [PMID: 32530025 DOI: 10.1039/d0nr02260h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Semiconductor nanowires in wrapped, gate-all-around transistor geometry are highly favorable for future electronics. The advanced nanodevice processing results in strain due to the deposited dielectric and metal layers surrounding the nanowires, significantly affecting their performance. Therefore, non-destructive nanoscale characterization of complete devices is of utmost importance due to the small feature sizes and three-dimensional buried structure. Direct strain mapping inside heterostructured GaSb-InAs nanowire tunnel field-effect transistor embedded in dielectric HfO2, W metal gate layers, and an organic spacer is performed using fast scanning X-ray nanodiffraction. The effect of 10 nm W gate on a single embedded nanowire with segment diameters down to 40 nm is retrieved. The tensile strain values reach 0.26% in the p-type GaSb segment of the transistor. Supported by the finite element method simulation, we establish a connection between the Ar pressure used during the W layer deposition and the nanowire strain state. Thus, we can benchmark our models for further improvements in device engineering. Our study indicates, how the significant increase in X-ray brightness at 4th generation synchrotron, makes high-throughput measurements on realistic nanoelectronic devices viable.
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Affiliation(s)
- Dmitry Dzhigaev
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Johannes Svensson
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Abinaya Krishnaraja
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Zhongyunshen Zhu
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Zhe Ren
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Yi Liu
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | | | | | - Filip Lenrick
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | | | - Susanna Hammarberg
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Jesper Wallentin
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Rainer Timm
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Lars-Erik Wernersson
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Anders Mikkelsen
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
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17
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Wen L, Pan D, Liao D, Zhao J. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular-beam epitaxy. NANOTECHNOLOGY 2020; 31:155601. [PMID: 31783375 DOI: 10.1088/1361-6528/ab5d78] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We have successfully fabricated foreign-catalyst-free GaSb nanowires directly on cleaved Si (111) substrates by molecular-beam epitaxy. We find that GaSb nanowires with the absence and presence of Ga droplets at the tip can be simultaneously obtained on cleaved Si substrates without Ga pre-deposition. Systematic morphological and structural studies verify that the two kinds of nanowires presented have different growth mechanisms, which are vapor-solid and vapor-liquid-solid mechanisms. The growth of GaSb nanowires can also be achieved on cleaved Si (110) and Si (100) substrates. The cleavage plane of the Si substrate has an obvious influence on the growth of the GaSb nanowires. The growth direction and crystal quality of catalyst-free nanowires are independent of the cleavage plane of the substrate. Our results may facilitate the understanding of the growth mechanism of III-V nanowires and the integration of foreign-catalyst-free GaSb nanowire-based devices with mature semiconductor technology.
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Affiliation(s)
- Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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18
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He J, Chen K, Huang C, Wang X, He Y, Dan Y. Explicit Gain Equations for Single Crystalline Photoconductors. ACS NANO 2020; 14:3405-3413. [PMID: 32119512 DOI: 10.1021/acsnano.9b09406] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Photoconductors based on semiconducting thin films, nanowires, and two-dimensional atomic layers have been extensively investigated in the past decades. However, there is no explicit photogain equation that allows for fitting and designing photoresponses of these devices. In this work, we managed to derive explicit photogain equations for silicon nanowire photoconductors based on experimental observations. The silicon nanowires were fabricated by patterning the device layer of silicon-on-insulator wafers by standard lithography that were doped with boron at a concentration of ∼8.6 × 1017 cm-3. It was found that the as-fabricated silicon nanowires have a surface depletion region ∼32 nm wide. This depletion region protects charge carriers in the channel from surface scatterings, resulting in the independence of charge carrier mobilities on nanowire size. Under light illumination, the depletion region logarithmically narrows down, and the nanowire channel widens accordingly. Photo Hall effect measurements show that the nanowire photoconductance is not contributed by the increase of carrier concentrations but by the widening of the nanowire channel. As a result, a nanowire photoconductor can be modeled as a resistor in connection with floating Schottky junctions near the nanowire surfaces. Based on the photoresponses of a Schottky junction, we derived explicit photogain equations for nanowire photoconductors that are a function of light intensity and device physical parameters. The gain equations fit well with the experimental data, from which we extracted the minority carrier lifetimes as tens of nanoseconds, consistent with the minority carrier lifetime in nanowires reported in literature.
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Affiliation(s)
- Jiajing He
- State Key Laboratory of Advanced Optical Communication Systems and Networks, University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Kaixiang Chen
- State Key Laboratory of Advanced Optical Communication Systems and Networks, University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Chulin Huang
- School of Microelectronics, Xi'an Jiao Tong University, Xi'an, Shaanxi 710049, China
| | - Xiaoming Wang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yongning He
- School of Microelectronics, Xi'an Jiao Tong University, Xi'an, Shaanxi 710049, China
| | - Yaping Dan
- State Key Laboratory of Advanced Optical Communication Systems and Networks, University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Microelectronics, Xi'an Jiao Tong University, Xi'an, Shaanxi 710049, China
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19
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Sun J, Peng M, Zhang Y, Zhang L, Peng R, Miao C, Liu D, Han M, Feng R, Ma Y, Dai Y, He L, Shan C, Pan A, Hu W, Yang ZX. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. NANO LETTERS 2019; 19:5920-5929. [PMID: 31374165 DOI: 10.1021/acs.nanolett.9b01503] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic and photoelectronic devices has stagnated in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can be incorporated into the NW body to act as a slight dopant, thus regulating the electrical properties of the NW. In this work, we demonstrate the use of Sn as a catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V-1 s-1. This high mobility is attributed to the slight doping of Sn atoms from the catalyst tip into the NW body, which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) compared with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show a high peak hole mobility of 170 cm2 V-1 s-1, a high responsivity of 61 A W-1, and fast rise and decay times of 195.1 and 380.4 μs, respectively, under the illumination of 1550 nm infrared light. All of the results demonstrate that the as-prepared Sn-catalyzed GaSb NWs are promising for application in next-generation electronics and optoelectronics.
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Affiliation(s)
- Jiamin Sun
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Meng Peng
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , P. R. China
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , P. R. China
| | - Lei Zhang
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System , Southeast University , Nanjing 210096 , P. R. China
| | - Rui Peng
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Chengcheng Miao
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Dong Liu
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Mingming Han
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Runfa Feng
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Yandong Ma
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Ying Dai
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System , Southeast University , Nanjing 210096 , P. R. China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering , Zhengzhou University , Zhengzhou 450001 , China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , P. R. China
| | - Weida Hu
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , P. R. China
| | - Zai-Xing Yang
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
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20
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 78] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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21
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Gao Z, Sun J, Han M, Yin Y, Gu Y, Yang ZX, Zeng H. Recent advances in Sb-based III-V nanowires. NANOTECHNOLOGY 2019; 30:212002. [PMID: 30708362 DOI: 10.1088/1361-6528/ab03ee] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
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Affiliation(s)
- Zhaofeng Gao
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China. School of Microelectronics, Shandong University, Jinan, 250100, People's Republic of China
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Yip S, Shen L, Ho JC. Recent advances in III-Sb nanowires: from synthesis to applications. NANOTECHNOLOGY 2019; 30:202003. [PMID: 30625448 DOI: 10.1088/1361-6528/aafcce] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The excellent properties of III-V semiconductors make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.
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Affiliation(s)
- SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong Special Administrative Region of China, People's Republic of China. Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, People's Republic of China
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23
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Li D, Lan C, Manikandan A, Yip S, Zhou Z, Liang X, Shu L, Chueh YL, Han N, Ho JC. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires. Nat Commun 2019; 10:1664. [PMID: 30971702 PMCID: PMC6458123 DOI: 10.1038/s41467-019-09606-y] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Accepted: 03/19/2019] [Indexed: 11/16/2022] Open
Abstract
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors. The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.
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Affiliation(s)
- Dapan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Changyong Lan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China
| | - Arumugam Manikandan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China.,State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ziyao Zhou
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Xiaoguang Liang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Lei Shu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Ning Han
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR. .,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China. .,State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
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24
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Zhou C, Zhang XT, Zheng K, Chen PP, Matsumura S, Lu W, Zou J. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime. NANOSCALE 2019; 11:6859-6865. [PMID: 30912781 DOI: 10.1039/c9nr01715a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The modulation of complex GaAs/AlGaAs core-shell nanowire heterostructures by the process of embedding GaAs quantum wells or AlGaAs quantum dots is feasible due to their minor lattice mismatch. In this study, we have grown GaAs/AlGaAs core-multishell nanowire heterostructures by molecular beam epitaxy and investigated their structural and optical characteristics. Our advanced electron microscopy investigations confirmed that we have grown wurtzite-structured GaAs/AlGaAs core-multishell nanowires, in which the AlGaAs inner-shell with a high Al concentration acts as a quantum barrier for the GaAs nanowire core and AlGaAs outer-shell. Photoluminescence measurements show that this unique nanowire heterostructure has a significantly increased carrier lifetime compared to the conventional GaAs/AlGaAs core-shell nanowire heterostructures. The observed prolonged carrier lifetime can be attributed to the increased electron confinement at the core-inner-shell interface and thus the delayed recombination of photoexcited electron-hole pairs. This study provides a possible design of nanowire heterostructures for high-efficiency optoelectronic devices.
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Affiliation(s)
- Chen Zhou
- Materials Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
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25
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Sun J, Yin Y, Han M, Yang ZX, Lan C, Liu L, Wang Y, Han N, Shen L, Wu X, Ho JC. Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit. ACS NANO 2018; 12:10410-10418. [PMID: 30285417 DOI: 10.1021/acsnano.8b05947] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
As an important semiconductor nanomaterial, InP nanowires (NWs) grown with a typical vapor-liquid-solid mechanism are still restricted from their low electron mobility for practical applications. Here, nonpolar-oriented defect-free wurtzite InP NWs with electron mobility of as high as 2000 cm2 V-1 s-1 can be successfully synthesized via Pd-catalyzed vapor-solid-solid growth. Specifically, PdIn catalyst particles are involved and found to expose their PdIn{210} planes at the InP nucleation frontier due to their minimal lattice mismatch with nonpolar InP{2̅110} and {1̅100} planes. This appropriate lattice registration would then minimize the overall free energy and enable the highly crystalline InP NW growth epitaxially along the nonpolar directions. Because of the minimized crystal defects, the record-high electron mobility of InP NWs ( i.e., 2000 cm2 V-1 s-1 at an electron concentration of 1017 cm-3) results, being close to the theoretical limit of their bulk counterparts. Furthermore, once the top-gated device geometry is employed, the device subthreshold slopes can be impressively reduced down to 91 mV dec-1 at room temperature. In addition, these NWs exhibit a high photoresponsivity of 104 A W-1 with fast rise and decay times of 0.89 and 0.82 s, respectively, in photodetection. All these results evidently demonstrate the promise of nonpolar-oriented InP NWs for next-generation electronics and optoelectronics.
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Affiliation(s)
- Jiamin Sun
- Center of Nanoelectronics and School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Yanxue Yin
- Center of Nanoelectronics and School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Mingming Han
- Center of Nanoelectronics and School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Zai-Xing Yang
- Center of Nanoelectronics and School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Changyong Lan
- Department of Materials Science and Engineering , City University of Hong Kong , 83 Tat Chee Avenue , Kowloon , Hong Kong SAR P. R. China
| | - Lizhe Liu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures , Nanjing University , Nanjing 210093 , P. R. China
| | - Ying Wang
- State Key Laboratory of Multiphase Complex Systems , Institute of Process Engineering, Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Ning Han
- State Key Laboratory of Multiphase Complex Systems , Institute of Process Engineering, Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Lifan Shen
- Department of Materials Science and Engineering , City University of Hong Kong , 83 Tat Chee Avenue , Kowloon , Hong Kong SAR P. R. China
| | - Xinglong Wu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures , Nanjing University , Nanjing 210093 , P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering , City University of Hong Kong , 83 Tat Chee Avenue , Kowloon , Hong Kong SAR P. R. China
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
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26
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Mäkelä J, Jahanshah Rad ZS, Lehtiö JP, Kuzmin M, Punkkinen MPJ, Laukkanen P, Kokko K. Crystalline and oxide phases revealed and formed on InSb(111)B. Sci Rep 2018; 8:14382. [PMID: 30258079 PMCID: PMC6158213 DOI: 10.1038/s41598-018-32723-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2018] [Accepted: 09/14/2018] [Indexed: 11/09/2022] Open
Abstract
Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this treatment’s effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology. The outcome is strongly dependent on surface conditions and remarkably, the (111) plane can oxidize without changes in surface lattice symmetry, or alternatively, resulting in a complex, semicommensurate quasicrystal-like structure. The findings are of major significance for passivation via oxide termination for nano-structured III–V/oxide devices containing several crystal plane surfaces. As a proof-of-principle, we present a procedure where InSb(111)B surface is cleaned by simple HCl-etching, transferred via air, and post-annealed and oxidized in ultrahigh vacuum.
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Affiliation(s)
- Jaakko Mäkelä
- University of Turku, Department of Physics and Astronomy, FI-20014, Turku, Finland.
| | | | - Juha-Pekka Lehtiö
- University of Turku, Department of Physics and Astronomy, FI-20014, Turku, Finland.,Comptek Solutions Ltd., Voimakatu 14, FI-20520, Turku, Finland
| | - Mikhail Kuzmin
- University of Turku, Department of Physics and Astronomy, FI-20014, Turku, Finland.,Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
| | - Marko P J Punkkinen
- University of Turku, Department of Physics and Astronomy, FI-20014, Turku, Finland
| | - Pekka Laukkanen
- University of Turku, Department of Physics and Astronomy, FI-20014, Turku, Finland.
| | - Kalevi Kokko
- University of Turku, Department of Physics and Astronomy, FI-20014, Turku, Finland
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27
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Ullah AR, Meyer F, Gluschke JG, Naureen S, Caroff P, Krogstrup P, Nygård J, Micolich AP. p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. NANO LETTERS 2018; 18:5673-5680. [PMID: 30134098 DOI: 10.1021/acs.nanolett.8b02249] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical subthreshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio ∼105, on-resistance ∼700 kΩ, contact resistance ∼30 kΩ, peak transconductance 1.2 μS/μm, and high-fidelity ac operation at frequencies up to 10 kHz. The device consists of a GaAs nanowire with an undoped core and heavily Be-doped shell. We carefully etch back the nanowire at the gate locations to obtain Schottky-barrier insulated gates while leaving the doped shell intact at the contacts to obtain low contact resistance. Our device opens a path to all-GaAs nanowire MESFET complementary circuits with simplified fabrication and improved performance.
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Affiliation(s)
- A R Ullah
- School of Physics , University of New South Wales , Sydney , NSW 2052 , Australia
| | - F Meyer
- School of Physics , University of New South Wales , Sydney , NSW 2052 , Australia
| | - J G Gluschke
- School of Physics , University of New South Wales , Sydney , NSW 2052 , Australia
| | - S Naureen
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
- IRnova AB , Electrum 236, SE-164 40 Kista , Sweden
| | - P Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
- Microsoft Station Q , Delft University of Technology , 2600 GA Delft , The Netherlands
| | - P Krogstrup
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , DK-2100 Copenhagen , Denmark
| | - J Nygård
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , DK-2100 Copenhagen , Denmark
| | - A P Micolich
- School of Physics , University of New South Wales , Sydney , NSW 2052 , Australia
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28
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Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires. Sci Rep 2018; 8:6928. [PMID: 29720609 PMCID: PMC5932019 DOI: 10.1038/s41598-018-25209-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2017] [Accepted: 04/06/2018] [Indexed: 01/20/2023] Open
Abstract
Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.
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29
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Fang X, Wei Z, Fang D, Chu X, Tang J, Wang D, Wang X, Li J, Li Y, Yao B, Wang X, Chen R. Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment. ACS OMEGA 2018; 3:4412-4417. [PMID: 31458667 PMCID: PMC6641701 DOI: 10.1021/acsomega.7b01783] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2017] [Accepted: 03/19/2018] [Indexed: 06/10/2023]
Abstract
GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed for GaSb. The surface states and optical properties of GaSb were found to depend on the N passivation conditions. Varying the plasma power during passivation modified the chemical bonds of the GaSb surface, which influenced the emission efficiency. X-ray photoelectron spectroscopy was used to quantitatively demonstrate that the GaSb oxide layer was removed via treatment at a plasma power of 100 W. After nitrogen passivation, the samples exhibited enhanced emission. Free exciton emission was the main factor leading to this enhanced luminescence. An energy band model for the surface states is used to explain the carrier radiative recombination processes. This nitrogen passivation approach can suppress surface states and improve the surface quality of GaSb-based materials and devices. The enhancement in exciton-related emission by this simple approach is important for improving the performance of GaSb-based optoelectronic devices.
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Affiliation(s)
- Xuan Fang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Zhipeng Wei
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dan Fang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xueying Chu
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jilong Tang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dengkui Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xinwei Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jinhua Li
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Yongfeng Li
- Key
Laboratory of Physics and Technology for Advanced Batteries, Ministry
of Education, College of Physics, Jilin
University, Changchun 130012, P. R. China
| | - Bin Yao
- Key
Laboratory of Physics and Technology for Advanced Batteries, Ministry
of Education, College of Physics, Jilin
University, Changchun 130012, P. R. China
| | - Xiaohua Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Rui Chen
- Department
of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, P. R. China
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He Y, Ouyang G. Modulation of the carrier mobility enhancement in Si/Ge core-shell nanowires under different interface confinements. Phys Chem Chem Phys 2018; 20:3888-3894. [PMID: 29355864 DOI: 10.1039/c7cp08259b] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
The theoretical analysis of the effect of interface confinement on the enhancement of carrier mobility in Si nanowires (SiNWs) is one of the critical aspects in the design and development of high efficiency Si-based optoelectronic devices. Herein, we propose an analytical method for SiNWs under different interface confinements in terms of the atomic-bond-relaxation correlation mechanism and continuum medium mechanics. Moreover, an analytical expression for the relationship between carrier mobility and bond identities is derived and the results are validated with the related experimental measurements. It is found that the size reduction of SiNWs can not only increase the energy bandgap, but also enhance the phonon and surface roughness scattering, thereby allowing for the depression of carrier mobility. Moreover, the underlying mechanism regarding the temperature dependent-carrier mobility in SiNWs with different orientations embedded within Ge coating layers is clarified, which provides a pathway to modulate the transport properties in Si-based nanostructures for desirable applications.
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Affiliation(s)
- Yan He
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha, 410081, China.
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31
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Zhang L, You S, Zuo M, Yang Q. Solution Synthesis of Nonequilibrium Zincblende MnS Nanowires. Inorg Chem 2017; 56:7679-7686. [PMID: 28661688 DOI: 10.1021/acs.inorgchem.7b00247] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Uniform four-coordinate nonequilibrium MnS nanowires mainly in zincblende structure, other than the stable rock-salt phase, are reported for the first time. The MnS nanowires are grown via a solution-solid-solid model from the reaction of a Mn(II) source with dibenzyl disulfide in oleylamine at 180-200 °C catalyzed by Ag2S nanocrystals in a body-centered cubic (bcc) fast-ionic phase transformed from their low-temperature monoclinic form. Investigations show that most of the zincblende MnS nanowires are grown along the ⟨112⟩ zone axis but a small proportion grow along the ⟨111⟩ZB/⟨0001⟩Wur axis with zincblende/defect-section and/or wurtzite/defect-section superlattices connected with the stems along the ⟨112⟩ direction. The nanowires have a tendency to grow straight at relatively low reaction temperature for short reaction times but twist at high temperature for long reaction times. Meanwhile, relatively high temperatures and long times favor the transition of the MnS nanowires in the zincblende phase to the corresponding thermodynamic ones in rock-salt form. Interestingly, even small increases in reaction pressure (1-2 atm) sensitively influence the growth of the MnS nanowires from zincblende to wurtzite form in the present catalytic system although low-pressure changes commonly do not have an obvious effect on condensed matter. In addition, the optical and magnetic properties of the zincblende MnS nanowires were studied, and they are varied largely from the bulk.
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Affiliation(s)
- Li Zhang
- Hefei National Laboratory of Physical Sciences at the Microscale (HFNL), ‡Department of Chemistry, §Laboratory of Nanomaterials for Energy Conversion (LNEC), ∥Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China , Hefei 230026, Anhui, People's Republic of China
| | - Su You
- Hefei National Laboratory of Physical Sciences at the Microscale (HFNL), ‡Department of Chemistry, §Laboratory of Nanomaterials for Energy Conversion (LNEC), ∥Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China , Hefei 230026, Anhui, People's Republic of China
| | - Ming Zuo
- Hefei National Laboratory of Physical Sciences at the Microscale (HFNL), ‡Department of Chemistry, §Laboratory of Nanomaterials for Energy Conversion (LNEC), ∥Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China , Hefei 230026, Anhui, People's Republic of China
| | - Qing Yang
- Hefei National Laboratory of Physical Sciences at the Microscale (HFNL), ‡Department of Chemistry, §Laboratory of Nanomaterials for Energy Conversion (LNEC), ∥Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China , Hefei 230026, Anhui, People's Republic of China
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Yang ZX, Liu L, Yip S, Li D, Shen L, Zhou Z, Han N, Hung TF, Pun EYB, Wu X, Song A, Ho JC. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition. ACS NANO 2017; 11:4237-4246. [PMID: 28355076 DOI: 10.1021/acsnano.7b01217] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility ⟨111⟩-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in ⟨111⟩ orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.
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Affiliation(s)
- Zai-Xing Yang
- Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China
| | - Lizhe Liu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China
| | - SenPo Yip
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | | | - Lifan Shen
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | | | - Ning Han
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences , Beijing 100190, PR China
| | | | - Edwin Yue-Bun Pun
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | - Xinglong Wu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China
| | - Aimin Song
- Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China
- School of Electrical and Electronic Engineering, University of Manchester , Manchester M13 9PL, U.K
| | - Johnny C Ho
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
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Borg M, Schmid H, Gooth J, Rossell MD, Cutaia D, Knoedler M, Bologna N, Wirths S, Moselund KE, Riel H. High-Mobility GaSb Nanostructures Cointegrated with InAs on Si. ACS NANO 2017; 11:2554-2560. [PMID: 28225591 DOI: 10.1021/acsnano.6b04541] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface layer and, in turn, is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects, and even occasional twin-free structures are observed. Hall/van der Pauw measurements are conducted on 20 nm-thick GaSb nanostructures, revealing high hole mobility of 760 cm2/(V s), which matches literature values for high-quality bulk GaSb crystals. Finally, we demonstrate a process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V metal-oxide-semiconductor technology.
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Affiliation(s)
- Mattias Borg
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Johannes Gooth
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Marta D Rossell
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
- Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Davide Cutaia
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Moritz Knoedler
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Nicolas Bologna
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
- Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Stephan Wirths
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | | | - Heike Riel
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
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Diameter Dependence of Planar Defects in InP Nanowires. Sci Rep 2016; 6:32910. [PMID: 27616584 PMCID: PMC5018732 DOI: 10.1038/srep32910] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2016] [Accepted: 08/05/2016] [Indexed: 01/29/2023] Open
Abstract
In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.
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Kolíbal M, Pejchal T, Vystavěl T, Šikola T. The Synergic Effect of Atomic Hydrogen Adsorption and Catalyst Spreading on Ge Nanowire Growth Orientation and Kinking. NANO LETTERS 2016; 16:4880-4886. [PMID: 27458789 DOI: 10.1021/acs.nanolett.6b01352] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Hydride precursors are commonly used for semiconductor nanowire growth from the vapor phase and hydrogen is quite often used as a carrier gas. Here, we used in situ scanning electron microscopy and spatially resolved Auger spectroscopy to reveal the essential role of atomic hydrogen in determining the growth direction of Ge nanowires with an Au catalyst. With hydrogen passivating nanowire sidewalls the formation of inclined facets is suppressed, which stabilizes the growth in the ⟨111⟩ direction. By contrast, without hydrogen gold diffuses out of the catalyst and decorates the nanowire sidewalls, which strongly affects the surface free energy of the system and results in the ⟨110⟩ oriented growth. The experiments with intentional nanowire kinking reveal the existence of an energetic barrier, which originates from the kinetic force needed to drive the droplet out of its optimum configuration on top of a nanowire. Our results stress the role of the catalyst material and surface chemistry in determining the nanowire growth direction and provide additional insights into a kinking mechanism, thus allowing to inhibit or to intentionally initiate spontaneous kinking.
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Affiliation(s)
- Miroslav Kolíbal
- Institute of Physical Engineering, Brno University of Technology , Technická 2, 616 69 Brno, Czech Republic
- CEITEC BUT, Brno University of Technology , Purkyňova 123, 616 69 Brno, Czech Republic
| | - Tomáš Pejchal
- CEITEC BUT, Brno University of Technology , Purkyňova 123, 616 69 Brno, Czech Republic
| | - Tomáš Vystavěl
- FEI Company, Vlastimila Pecha 1282/12, 627 00 Brno, Czech Republic
| | - Tomáš Šikola
- Institute of Physical Engineering, Brno University of Technology , Technická 2, 616 69 Brno, Czech Republic
- CEITEC BUT, Brno University of Technology , Purkyňova 123, 616 69 Brno, Czech Republic
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